Perovskite / tunneling oxide layer passivation contact laminated solar cell and preparation method thereof

By using electron beam evaporation method to prepare transparent metal conductive oxide tunneling layer in perovskite/tunneling oxide passivation contact laminated solar cells, the bottleneck problems in the tunneling layer carrier concentration and performance during the preparation process in the prior art are solved, and a significant improvement in device performance is achieved.

CN119947548APending Publication Date: 2025-05-06TRINA SOLAR CO LTD
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Patent Information

Application Number
CN202510064882.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-15
Publication Date
2025-05-06

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Abstract

The invention belongs to the photovoltaic field, and particularly relates to a perovskite / tunneling oxide layer passivation contact laminated solar cell and a preparation method thereof. The perovskite / tunneling oxide layer passivation contact laminated solar cell comprises a tunneling layer prepared by adopting an electron beam evaporation method, wherein the tunneling layer is a transparent metal conductive oxide. The photoelectric conversion efficiency of the perovskite / tunneling oxide layer passivation contact laminated solar cell is improved.
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