Preparation method of high-stability composite film memristor

Abstract

The invention relates to the technical field of heterojunction material memristors, in particular to a preparation method of a high-stability composite film memristor, a Ti3C2Tx / CuI composite film is prepared through a solution deposition method to serve as a memristor active layer, the experimental method is simple, challenges confronted by an oxidation method for constructing the memristor active layer at present can be overcome, and the memristor active layer can be prepared more stably. The preparation repetition rate of the memristor is effectively improved, the reliability of the device is guaranteed, and therefore the problem that an existing preparation method of the composite film memristor is poor in stability is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of heterojunction material memristors, and in particular to a method for preparing a high-stability composite thin film memristor. Background Art

[0002] With the rapid development of artificial intelligence and neural network technology, traditional computing architectures are inefficient in processing parallel computing and large-scale data. Memristors are very suitable for simulating the functions of neurons and synapses due to their nonlinear characteristics and resistive memory behavior, making them ideal components for building neuromorphic computing systems. In recent years, two-dimensional materials have shown attractive development potential in the fields of storage and biology due to their special structure and properties. They have the characteristics of nanometer-level thickness, lateral wafer-size preparation, and special layered structure, which makes them exhibit excellent properties such as low operating voltage, flexibility, high integration, and low energy consumption in memristors. Therefore, the development and research of two-dimensional materials is of great significance for the preparation of high-performance, multifunctional memristors and neural network hardware. Ti3C2T x It is a two-dimensional transition metal carbonitride, which has attracted much attention for its unique layered structure and excellent performance. This material has outstanding performance in electrochemical energy storage devices, sensors, supercapacitors, optoelectronic devices and other fields. In addition, the ultra-thin Ti3C2T x It can be assembled into thin films on supporting materials, showing great potential in the field of optoelectronic devices.

[0003] At present, the mainstream method of giving two-dimensional materials memristor properties is to partially oxidize two-dimensional materials to construct a memristor active layer. This method is often used in Ti3C2T x The method of constructing the active layer of a memristor by oxidation is simple and can be applied to most two-dimensional materials.

[0004] However, since the oxidation process is closely related to complex factors such as the temperature and humidity of the environment, as well as the grain boundaries and microscopic defects of the material, it is difficult to accurately control the degree of oxidation, especially the oxidation ratio, which leads to low repeatability and lack of device reliability in the memristor prepared by this method. Experimental analysis has shown that the processing of Ti3C2T x The difficulty in controlling the thin film oxidation process leads to low reproducibility and poor stability of the device. Summary of the invention

[0005] The purpose of the present invention is to provide a method for preparing a high-stability composite thin film memristor, aiming to solve the problem of poor stability of the existing composite thin film memristor preparation method.

[0006] To achieve the above object, the present invention provides a method for preparing a high-stability composite thin film memristor, comprising the following steps:

[0007] Sample preparation using silicon wafers;

[0008] Applying photoresist to the sample;

[0009] Performing photolithography on the resisted sample using photolithography technology;

[0010] Performing development processing on the sample after photolithography;

[0011] Pre-depositing a bottom electrode on the developed sample;

[0012] Degumming the pre-deposited sample;

[0013] Perform hydrophilic treatment on the debonded sample;

[0014] Ti3C2T was spin-coated on the hydrophilic treated sample surface. x Solution;

[0015] Prepare CuI solution based on CuI powder and acetonitrile solution;

[0016] Spin coating Ti3C2T with CuI solution x The samples after solution were spin coated and annealed;

[0017] The top electrode was plated on the annealed sample by magnetron sputtering.

[0018] Among them, in "using silicon wafers for sample preparation", the sample preparation includes cutting and ultrasonic cleaning, and the ultrasonic cleaning includes ultrasonication in acetone solution, anhydrous ethanol (concentration of 99%) and deionized water for 20 minutes in sequence.

[0019] Among them, in "processing the sample with photoresist", the parameters of the photoresist processing are low speed 500r / min, time 10s, high speed 3000r / min, time 60s, pre-bake 110°C, time 80s.

[0020] Among them, in “performing development treatment on the sample after photolithography”, the development treatment time is 40s.

[0021] Among them, in “performing hydrophilic treatment on the sample after degumming”, the hydrophilic treatment is performed in a plasma cleaning machine for 10 minutes.

[0022] Among them, in the "spin coating of Ti3C2T on the surface of the hydrophilic treated sample x solution", the surface is spin-coated with Ti3C2T x The parameters of the solution are low speed 500r / min, time 10s, high speed 1000r / min, time 60s.

[0023] Among them, in “preparing CuI solution based on CuI powder and acetonitrile solution”, the configuration parameters of the CuI solution are stirring at a speed of 550 r / min for 2 hours.

[0024] Among them, in "Using CuI solution to spin-coat Ti3C2T x The sample after the solution is spin-coated and annealed, and the parameters of the CuI solution spin coating are low speed 500r / min, time 5s, high speed 3000r / min, time 30s.

[0025] The invention discloses a method for preparing a high-stability composite thin film memristor, comprising the following steps: using a silicon wafer to prepare a sample; applying photoresist to the sample; performing photolithography on the resisted sample using a photolithography technique; performing development on the resisted sample; pre-depositing a bottom electrode on the developed sample; performing degumming on the pre-deposited sample; performing hydrophilic treatment on the degummed sample; and spin-coating Ti3C2T on the surface of the hydrophilic treated sample. x Solution; Prepare CuI solution based on CuI powder and acetonitrile solution; Use CuI solution to spin-coat Ti3C2T x The sample after solution deposition is spin coated and annealed; the top electrode is plated on the sample after annealing by magnetron sputtering. x / CuI composite film as the active layer of the memristor, the experimental method is simple, which helps to overcome the challenges faced by the current oxidation method for constructing the active layer of the memristor, effectively improve the repetition rate of memristor preparation, and ensure the reliability of the device, thereby solving the problem of poor stability of the existing composite thin film memristor preparation method. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 It is a flow chart of a method for preparing a high-stability composite thin film memristor provided by the present invention.

[0028] Figure 2 It is a schematic diagram of the preparation process of composite thin film memristor.

[0029] Figure 3 Ti3C2T x / CuI memristor array.

[0030] Figure 4Ag / Ti3C2T x IV curve of / CuI / Au memristor. DETAILED DESCRIPTION

[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0032] See also Figures 1 to 4 The present invention provides a method for preparing a high-stability composite thin film memristor, comprising the following steps:

[0033] S1 uses silicon wafers for sample preparation;

[0034] The sample preparation includes cutting and ultrasonic cleaning, and the ultrasonic cleaning includes ultrasonication in acetone solution, anhydrous ethanol (with a concentration of 99%) and deionized water for 20 minutes in sequence.

[0035] Specifically, a silicon wafer with an oxide layer on the surface was prepared as a substrate, cut into appropriate sizes, and ultrasonicated in acetone solution, anhydrous ethanol (concentration of 99%) and deionized water for 20 minutes in sequence.

[0036] S2 performs photoresist coating on the sample;

[0037] The parameters of the photoresist treatment are low speed 500 r / min, time 10 s, high speed 3000 r / min, time 60 s, pre-baking 110° C., time 80 s.

[0038] Specifically, the sample after the drying treatment in step S1 is subjected to photoresist coating treatment under the parameters of low speed 500 r / min, time 10 s, high speed 3000 r / min, time 60 s, pre-baking 110° C., time 80 s.

[0039] S3 performs photolithography on the sample after etching using photolithography technology;

[0040] Specifically, the sample processed in step S2 is subjected to photolithography processing using conventional photolithography technology.

[0041] S4 performs development processing on the sample after photolithography;

[0042] Specifically, the sample processed in step S3 was developed for 40 seconds, then dried with nitrogen and the photolithography effect was observed.

[0043] S5 pre-deposit a bottom electrode on the developed sample;

[0044] Specifically, the sample processed in step S4 is pre-deposited with an Au / Ni bottom electrode on the substrate using a metal deposition technique.

[0045] S6 performs a degumming process on the pre-deposited sample;

[0046] Specifically, the sample processed in step S5 is subjected to a degumming treatment using an acetone solution.

[0047] S7 performs hydrophilic treatment on the debonded sample;

[0048] The hydrophilic treatment is carried out in a plasma cleaning machine for 10 minutes.

[0049] Specifically, the sample processed in step S6 is placed in a plasma cleaning machine for 10 minutes to improve the hydrophilicity of the sample surface.

[0050] S8 spin-coated Ti3C2T on the hydrophilic treated sample surface x Solution;

[0051] The surface is spin-coated with Ti3C2T x The parameters of the solution are low speed 500r / min, time 10s, high speed 1000r / min, time 60s.

[0052] Specifically, the sample treated in step S7 was spin-coated with Ti3C2T at a low speed of 500 r / min for 10 s and a high speed of 1000 r / min for 60 s. x Solution.

[0053] S9 prepares CuI solution based on CuI powder and acetonitrile solution;

[0054] The configuration parameters of the CuI solution are stirring at a speed of 550 r / min for 2 hours.

[0055] Specifically, CuI powder and acetonitrile solution were taken, a CuI solution of a certain concentration was prepared in a vacuum glove box, and stirred at a speed of 550 r / min for 2 h.

[0056] S10 Use CuI solution to spin-coat Ti3C2T x The samples after solution were spin coated and annealed;

[0057] The parameters of the spin coating of the CuI solution are low speed 500 r / min, time 5 s, high speed 3000 r / min, time 30 s.

[0058] Specifically, the sample treated in step S8 was spin-coated with the CuI solution obtained in step S9 at a low speed of 500 r / min for 5 s and a high speed of 3000 r / min for 30 s, and then annealed to construct Ti3C2T on the sample surface. x / CuI composite thin film.

[0059] S11 uses a magnetron sputtering device to plate the top electrode on the annealed sample.

[0060] Specifically, a mask is attached to the surface of the sample processed in step S10, and a silver top electrode is plated on the film using a magnetron sputtering apparatus.

[0061] Beneficial effects:

[0062] 1. The present invention uses a solution deposition method to prepare Ti3C2T x The / CuI composite film is used as the active layer of the memristor, and the experimental method is simple, which helps to overcome the challenges faced by the current oxidation method of constructing the active layer of the memristor.

[0063] Second, effectively improve the repetition rate of memristor preparation and ensure device reliability. This will provide theoretical guidance and scientific basis for the further development of memristor technology, thereby promoting the further development and application of the memristor field and providing effective ideas for future memristor-related research.

[0064] 3. The present invention constructs Ag / Ti3C2T x / CuI / Au memristor, the device has an extremely low operating voltage and does not require Ti3C2T x Oxidation is performed and the device preparation repetition rate is high.

[0065] The above disclosure is only a preferred embodiment of the method for preparing a high-stability composite thin film memristor of the present invention. Of course, it cannot be used to limit the scope of rights of the present invention. Ordinary technicians in this field can understand that all or part of the processes of the above embodiments and equivalent changes made according to the claims of the present invention still fall within the scope of the invention.

Claims

1. A method for preparing a high-stability composite thin film memristor, characterized in that: The following steps are involved: Sample preparation using silicon wafers; Applying photoresist to the sample; Performing photolithography on the resisted sample using photolithography technology; Performing development processing on the sample after photolithography; Pre-depositing a bottom electrode on the developed sample; Degumming the pre-deposited sample; Perform hydrophilic treatment on the debonded sample; Ti3C2T was spin-coated on the hydrophilic treated sample surface. x Solution; Prepare CuI solution based on CuI powder and acetonitrile solution; Spin coating Ti3C2T with CuI solution x The samples after solution were spin coated and annealed; The top electrode was plated on the annealed sample by magnetron sputtering.

2. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In "Sample preparation using silicon wafers", the sample preparation includes cutting and ultrasonic cleaning, and the ultrasonic cleaning includes ultrasonication in acetone solution, anhydrous ethanol (concentration of 99%) and deionized water for 20 minutes in sequence.

3. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In "processing the sample with photoresist", the parameters of the photoresist process are low speed 500 r / min, time 10 s, high speed 3000 r / min, time 60 s, pre-bake 110°C, time 80 s.

4. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In "performing development treatment on the sample after photolithography", the development treatment time is 40s.

5. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In "performing hydrophilic treatment on the sample after degumming", the hydrophilic treatment is performed in a plasma cleaning machine for 10 minutes.

6. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In the process of spin coating Ti3C2T on the surface of the hydrophilic treated sample x solution", the surface is spin-coated with Ti3C2T x The parameters of the solution are low speed 500r / min, time 10s, high speed 1000r / min, time 60s.

7. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In "Preparation of CuI solution based on CuI powder and acetonitrile solution", the preparation parameters of the CuI solution are stirring at a speed of 550 r / min for 2 h.

8. The method for preparing a high-stability composite thin film memristor according to claim 1, characterized in that: In "Using CuI solution to spin-coat Ti3C2T x The sample after the solution is spin-coated and annealed, and the parameters of the CuI solution spin coating are low speed 500r / min, time 5s, high speed 3000r / min, time 30s.

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