Semiconductor module and semiconductor module unit

Abstract

A semiconductor module according to one embodiment of the present invention is provided with a first substrate, a second substrate, and a third heat dissipation member. A first semiconductor element is provided on one main surface of the first substrate, and a first heat dissipation member is provided on the other main surface of the first substrate. The second substrate is disposed so as to face the first substrate, one main surface facing the one main surface of the first substrate is provided with a second semiconductor element, and the other main surface is provided with a second heat dissipation member. At least a portion of the third heat dissipation member is sandwiched between a first electrode provided on a main surface of the first semiconductor element facing the second semiconductor element and a second electrode provided on a main surface of the second semiconductor element facing the first semiconductor element.

Description

Technical Field

[0001] The present invention relates to a semiconductor module and a semiconductor module unit. This application claims priority based on Japanese Patent Application No. 2022-158798 filed in Japan on September 30, 2022, and the contents thereof are incorporated herein by reference. Background Art

[0002] Conventionally, there is a semiconductor device having a structure in which a high thermal conductivity insulating substrate serving as a heat sink is thermally connected to both the front and back surfaces of a semiconductor chip so as to sandwich the semiconductor chip, thereby dissipating heat generated from the semiconductor chip (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2006-093733 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, in the above-mentioned prior art, there is still room for improvement from the viewpoint of cooling efficiency. The present invention provides a semiconductor module and a semiconductor module unit capable of improving cooling efficiency.

[0008] Solutions to Solve Problems

[0009] A semiconductor module according to one embodiment of the present invention comprises a first substrate, a second substrate and a third heat dissipation component. The first substrate has a first semiconductor element disposed on one main surface and a first heat dissipation component disposed on the other main surface. The second substrate is arranged in a manner opposite to the first substrate, has a second semiconductor element disposed on one main surface facing the first main surface of the first substrate, and has a second heat dissipation component disposed on the other main surface. At least a portion of the third heat dissipation component is sandwiched between a first electrode disposed on the main surface of the first semiconductor element on the side facing the second semiconductor element and a second electrode disposed on the main surface of the second semiconductor element on the side facing the first semiconductor element.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to provide a semiconductor module capable of improving cooling efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing a circuit configuration of a semiconductor module according to an embodiment.

[0013] Figure 2 It is a perspective view of a semiconductor module unit according to an embodiment.

[0014] Figure 3 It is a cross-sectional view of a semiconductor module unit according to an embodiment.

[0015] Figure 4 It is a cross-sectional view showing the structure of a semiconductor module according to the embodiment.

[0016] Figure 5 It is a cross-sectional view of a semiconductor module unit according to a first modified example of the embodiment.

[0017] Figure 6 It is a cross-sectional view of a semiconductor module unit according to a second modified example of the embodiment. DETAILED DESCRIPTION

[0018] Hereinafter, the semiconductor module and the semiconductor module unit for implementing the present invention (hereinafter referred to as "embodiment") are described in detail with reference to the accompanying drawings. In addition, the present invention is not limited to the embodiment. In addition, each embodiment can be appropriately combined within the scope of the processing content. In addition, in the following embodiments, the same symbols are marked on the components that have the same function, and repeated descriptions are omitted.

[0019] In the embodiments shown below, expressions such as "constant", "orthogonal", "perpendicular", or "parallel" are sometimes used, but these expressions do not need to be strictly "constant", "orthogonal", "perpendicular", or "parallel". That is, the above expressions allow for deviations such as manufacturing accuracy and setting accuracy.

[0020] In the drawings referred to below, for easy understanding, mutually orthogonal X-axis, Y-axis, and Z-axis directions are sometimes defined, and an orthogonal coordinate system is shown with the positive Z-axis direction being the vertical upward direction.

[0021] [1. Circuit Structure of Semiconductor Module According to Embodiment]

[0022] First, refer to Figure 1 A circuit configuration of a semiconductor module according to an embodiment will be described. Figure 1 It is a diagram showing a circuit configuration of a semiconductor module 1 according to the first embodiment.

[0023] The semiconductor module 1 of the embodiment constitutes a part of a power conversion device that converts DC power supplied from a DC power source into AC power.

[0024] like Figure 1 As shown, the semiconductor module 1 according to the embodiment includes a power supply terminal 3 , a circuit unit 5 , and an input / output terminal 7 .

[0025] The power terminal 3 is a terminal connected to a DC power source (not shown). Specifically, the power terminal 3 includes a positive terminal 31 connected to the positive side of the DC power source and a negative terminal 32 connected to the negative side.

[0026] The circuit unit 5 includes transistors 51 and 52 and diodes 53 and 54 as examples of semiconductor elements. The two transistors 51 and 52 are connected in series between the positive terminal 31 and the negative terminal 32. The diode 53 is connected in antiparallel to the transistor 51. The diode 54 is connected in antiparallel to the transistor 52.

[0027] The transistors 51 and 52 are, for example, IGBTs (Insulated Gate Bipolar Transistors). In addition, the diodes 53 and 54 are reflux diodes for protecting the IGBTs. In addition, the transistors 51 and 52 may be power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or GTOs (Gate Turn-Off) thyristors.

[0028] The input / output terminal 7 includes a load terminal 71 and a control terminal 72. The load terminal 71 is an output terminal for outputting AC power to a load such as a motor. The load terminal 71 is connected to a connection node between the two transistors 51 and 52. The control terminal 72 is an input terminal for inputting a drive signal for driving the transistors 51 and 52.

[0029] In the semiconductor module 1 configured as described above, the two transistors 51 and 52 are alternately turned on according to the drive signal input from the control terminal 72, thereby converting the DC power input between the positive terminal 31 and the negative terminal 32 into AC power, and outputting it from the load terminal 71. In addition, when two semiconductor modules 1 are connected in parallel, single-phase AC power can be generated, and when three semiconductor modules 1 are connected in parallel, three-phase AC power can be generated.

[0030] During power conversion, the semiconductor module 1 needs to dissipate heat generated by driving the transistors 51, 52 and the diodes 53, 54. The transistors 51, 52 and the diodes 53, 54 that are heat sources are generally in the form of thin plates cut from a wafer, with electrodes provided on both sides and electrically connected by conductors.

[0031] Furthermore, in order to dissipate heat, the semiconductor module 1 has an electrically connected conductor which is also used as a heat dissipation material and is thermally connected to the substrate. Heat transferred to the conductor is dissipated via the insulating substrate.

[0032] The reduction in size of the semiconductor module 1 leads to high productivity. The semiconductor module is reduced in size to achieve compactness of component area and cost reduction, and in molding components, productivity is increased by reducing the size of the mold or increasing the number of molds.

[0033] In the semiconductor module 1, when the size is reduced, the internal heat density increases. Therefore, in order to improve the productivity of the semiconductor module 1, it is necessary to improve the heat dissipation while reducing the size. Therefore, the semiconductor module 1 of the embodiment has a structure that can improve the heat dissipation while reducing the occupied area.

[0034] [2. Semiconductor module unit according to the embodiment]

[0035] First, refer to Figure 1 and Figure 2 , the structure of the semiconductor module unit 100 according to the embodiment is described. Figure 2 It is a perspective view of the semiconductor module unit 100 according to the embodiment. Figure 3 2 is a cross-sectional view of a semiconductor module unit 100 according to the embodiment.

[0036] like Figure 2 As shown, the semiconductor module unit 100 of the embodiment includes: three semiconductor modules 1 arranged in a row; and a flow path forming member 20 that accommodates the three semiconductor modules 1 and forms a flow path of a refrigerant for cooling the semiconductor modules 1 .

[0037] Each semiconductor module 1 is housed in the flow path forming member 20 with the positive terminal 31, the negative terminal 32 and a part of the load terminal 71 protruding outside the flow path forming member 20. The number of semiconductor modules 1 housed in the flow path forming member 20 may be two or less, or four or more.

[0038] The flow path forming member 20 includes a refrigerant inflow portion 21 and a refrigerant outflow portion 22. The inflow portion 21 is provided at the lower surface of one end side of the row of semiconductor modules 1 arranged in a row in the flow path forming member 20. The outflow portion 22 is provided at the lower surface of the other end side of the row of semiconductor modules 1 arranged in a row in the flow path forming member 20.

[0039] like Figure 3 As shown, the semiconductor module 1 includes a first substrate 40 and a second substrate 60. A first semiconductor element 5A is provided on one main surface (the upper surface in this case) of the first substrate 40. The first semiconductor element 5A includes, for example, a transistor 51 and a diode 53.

[0040] The first substrate 40 is provided with a first heat sink 81 on the other main surface (here, the lower surface). The first heat sink 81 includes heat sink pins 86. In addition, the first substrate 40 may be provided with a heat sink instead of the heat sink pins 86.

[0041] The second substrate 60 is disposed so as to face the first substrate 40. The second substrate 60 has a second semiconductor element 5B provided on one main surface (here, the lower surface) facing one main surface (here, the upper surface) of the first substrate 40.

[0042] The second substrate 60 is provided with a second heat sink 82 on the other main surface (here, the upper surface). The second heat sink 82 includes heat sink pins. In addition, the second substrate 60 may be provided with a heat sink instead of the heat sink pins 86.

[0043] On the other hand, Figure 3 As shown, the flow path forming member 20 can be divided into a lower member 23, a connecting member 24, and an upper member 25. The lower member 23 forms a refrigerant flow path by an upper surface inside and a lower surface of the semiconductor module 1. The upper member 25 forms a refrigerant flow path by an inner lower surface and an upper surface of the semiconductor module 1. The connecting member 24 connects the upper and lower refrigerant flow paths.

[0044] like Figure 3 As shown by the hollow arrow, the refrigerant flows into the interior of the flow path forming member 20 from the inlet portion 21. Then, the refrigerant flows through the refrigerant flow path formed by the upper surface of the interior and the lower surface of the semiconductor module 1 in the lower member 23 of the flow path forming member 20, and flows out from the outflow portion 22 to the outside of the flow path forming member 20.

[0045] In addition, if Figure 3 As shown by the hollow arrow, the refrigerant flows into the interior of the flow path forming member 20 from the inlet portion 21. Then, the refrigerant passes through the connecting member 24, passes through the refrigerant flow path formed by the lower surface of the interior and the upper surface of the semiconductor module 1 in the upper member 25 of the flow path forming member 20, and flows out from the outflow portion 22 to the outside of the flow path forming member 20 through the connecting member 24.

[0046] Thus, the semiconductor module 1 is cooled from both the surface facing the lower member 23 of the flow path forming member 20 and the surface facing the upper member 25 of the flow path forming member 20 , so that the cooling efficiency can be improved.

[0047] Furthermore, the semiconductor module 1 is provided with heat dissipation pins 86 on the surface facing the lower part 23 of the flow path forming part 20 and the surface facing the lower part 23 of the flow path forming part 20, so that the contact area with the refrigerant is increased. Thus, the semiconductor module 1 can further improve the cooling efficiency. In addition, even if the semiconductor module 1 is provided with a heat sink instead of the heat dissipation pins 86, the cooling efficiency can also be further improved.

[0048] The semiconductor module 1 further includes a third heat sink 83 between the first semiconductor element 5A and the second semiconductor element 5B. The third heat sink 83 is thermally connected to the first heat sink 81 via a thermally conductive member 84. The third heat sink 83 is thermally connected to the second heat sink 82 via a thermally conductive member 85.

[0049] Thus, the semiconductor module 1 can transfer the heat that is easily accumulated between the first semiconductor element 5A and the second semiconductor element 5B to the first heat dissipation member 81 via the third heat dissipation member 83 and the heat conduction member 84. In addition, the semiconductor module 1 can transfer the heat that is easily accumulated between the first semiconductor element 5A and the second semiconductor element 5B to the second heat dissipation member 82 via the third heat dissipation member 83 and the heat conduction member 85.

[0050] Therefore, in the semiconductor module 1 , even if the first semiconductor element 5A and the second semiconductor element 5B are overlapped in a plan view to reduce the occupied area, the heat dissipation efficiency can be improved by the three-layer cooling structure of the first heat dissipating member 81 , the second heat dissipating member 82 , and the third heat dissipating member 83 .

[0051] [3. Structure of semiconductor module according to embodiment]

[0052] Next, refer to Figure 4 , the structure of the semiconductor module 1 according to the embodiment will be described. Figure 4 is a cross-sectional view showing the structure of a semiconductor module 1 according to the embodiment. Figure 4 In, omitted Figure 3 An illustration of the flow path forming member 20 and the heat dissipation pins 86 is shown.

[0053] like Figure 4 As shown, the semiconductor module 1 includes a first substrate 40 , a second substrate 60 , a first semiconductor element 5A, a second semiconductor element 5B, a first heat sink 81 , a second heat sink 82 , a third heat sink 83 , and a thermally conductive member 84 .

[0054] The first substrate 40 includes an insulating substrate 41 , a conductive layer 42 bonded to one principal surface (here, the upper surface) of the insulating substrate 41 , and a conductive layer 43 bonded to the other principal surface (here, the lower surface) of the insulating substrate 41 .

[0055] The insulating substrate 41 is, for example, a ceramic substrate. The conductive layers 42 and 43 contain, for example, Cu (copper). The conductive layers 42 and 43 may also contain metals other than Cu. The insulating substrate 41 and the conductive layers 42 and 43 are bonded, for example, by active metal bonding (AMB: Active Metal Brazing) or direct copper bonding (DCB: Direct Copper Bonding). The conductive layer 42 bonded to one main surface (here, the upper surface) of the insulating substrate 41 is patterned with a circuit.

[0056] The first substrate 40 has a first semiconductor element 5A provided on one main surface (the upper surface in this case). The thermal conductivity of the first semiconductor element 5A is preferably 100 W / m·K or more. The material of the first semiconductor element 5A is Si (silicon) or SiC (silicon carbide).

[0057] The first semiconductor element 5A includes a transistor 51 and a diode 53. The first semiconductor element 5A is provided with a first electrode 55 on a main surface opposite to the main surface abutting against the conductive layer 42 of the first substrate 40. The first electrode 55 is, for example, a bus bar. The first electrode 55 connects a terminal provided on the first semiconductor element 5A and a circuit patterned on the conductive layer 42.

[0058] The first semiconductor element 5A and the components located above and below the first semiconductor element 5A are bonded by a sintered material. Thus, compared with wire bonding, the first semiconductor element 5A and the components located above and below the first semiconductor element 5A can be stacked without a gap. The sintered material is preferably Ag (silver) or Cu, for example. Thus, compared with solder, the heat resistance and heat dissipation of the bonding portion between the first semiconductor element 5A and the components located above and below the first semiconductor element 5A are improved.

[0059] The first substrate 40 is provided with a first heat dissipation member 81 on the other main surface. The first heat dissipation member 81 includes a flat heat dissipation plate 81A and heat dissipation pins 86 (see Figure 3 The heat sink 81A and the heat sink pins 86 are preferably made of a metal having Cu or Al (aluminum) as a main component.

[0060] The main surface 81B of the first heat dissipation component 81 on the side opposite to the main surface of the heat dissipation plate 81A facing the first substrate 40 constitutes a part of the inner side surface of the refrigerant flow path. The heat dissipation pins 86 or heat dissipation fins are provided to protrude into the refrigerant flow path from the main surface 81B of the heat dissipation plate 81A constituting a part of the inner side surface of the refrigerant flow path. In addition, the first heat dissipation component 81 does not need to be provided with the heat dissipation pins 86 or heat dissipation fins.

[0061] The second substrate 60 includes an insulating substrate 61 , a conductive layer 62 bonded to one principal surface (here, the lower surface) of the insulating substrate 61 , and a conductive layer 63 bonded to the other principal surface (here, the upper surface) of the insulating substrate 61 .

[0062] The insulating substrate 61 is, for example, a ceramic substrate. The conductive layers 62 and 63 contain, for example, Cu. The conductive layers 62 and 63 may also contain metals other than Cu. The insulating substrate 61 and the conductive layers 62 and 63 are bonded, for example, by AMB or DCB. The conductive layer 62 bonded to one main surface (here, the lower surface) of the insulating substrate 61 is patterned with a circuit.

[0063] The second semiconductor element 5B is provided on one main surface (here, the lower surface) of the second substrate 60. The thermal conductivity of the second semiconductor element 5B is preferably 100 W / m·K or more. The material of the second semiconductor element 5B is Si or SiC.

[0064] The second semiconductor element 5B includes a transistor 52 and a diode 54. The second semiconductor element 5B is provided with a second electrode 56 on the main surface opposite to the main surface abutting against the conductive layer 62 of the second substrate 60. The second electrode 56 is, for example, a bus bar. The second electrode 56 connects the terminal provided on the second semiconductor element 5B and the circuit patterned on the conductive layer 62.

[0065] The first semiconductor element 5A and the second semiconductor element 5B and the components above and below the first semiconductor element 5A and the second semiconductor element 5B are bonded by the sintered material. Thus, compared with wire bonding, the second semiconductor element 5B and the components above and below the second semiconductor element 5B can be stacked without gaps.

[0066] The sintered material is preferably Ag or Cu. This improves heat resistance and heat dissipation properties of the joints between the second semiconductor element 5B and the members located above and below the second semiconductor element 5B, as compared to solder.

[0067] The second substrate 60 is provided with a second heat dissipation member 82 on the other main surface. The second heat dissipation member 82 includes a flat heat dissipation plate 82A and heat dissipation pins 86 (see Figure 3 ). The heat sink 82A and the heat sink pins 86 are preferably made of a metal having Cu or Al as a main component, for example.

[0068] The main surface 82B of the second heat dissipation component 82 on the side opposite to the main surface of the heat dissipation plate 82A facing the second substrate 60 constitutes a part of the inner side surface of the refrigerant flow path. The heat dissipation pins 86 or heat dissipation fins are provided to protrude into the refrigerant flow path from the main surface 82B of the heat dissipation plate 82A constituting a part of the inner side surface of the refrigerant flow path. In addition, the second heat dissipation component 82 does not need to be provided with the heat dissipation pins 86 or heat dissipation fins.

[0069] At least a portion of the third heat sink 83 is sandwiched between the first electrode 55 and the second electrode 56, that is, is disposed between the first semiconductor element 5A and the second semiconductor element 5B. The thickness of the third heat sink 83 is not particularly limited, but is preferably 0.01 to 5 mm.

[0070] The third heat sink 83 is preferably a metal with Cu or Al as a main component. The third heat sink 83 may also be a metal other than Cu or Al or a conductive component. In addition, the third heat sink 83 may also be a metal spacer or a structure connecting solder and a metal spacer.

[0071] When the third heat sink 83 has conductivity, at least the surface of the portion sandwiched between the first electrode 55 and the second electrode is covered with an insulating material 83C. The insulating material may be a highly heat-resistant resin, an inorganic insulating material, or an insulating material composite of an inorganic insulating material and a resin.

[0072] The thermal conductivity of the insulating material is not particularly limited when the thickness is less than 0.5 mm, but is preferably greater than 1 W / m·K. If the insulating material is an inorganic insulating material, high heat resistance and high thermal conductivity can be obtained, so it is more preferable. When the surface of the third heat dissipation component 83 is Al, an anodized anti-corrosion aluminum coating can also be used as the insulating material.

[0073] The third heat dissipation component 83 includes a heat dissipation plate 83A. The end surface 83B of the heat dissipation plate 83A of the third heat dissipation component 83 in the surface direction constitutes a part of the inner side surface of the refrigerant flow path. For example, the third heat dissipation component 83 includes a heat dissipation plate 83A, and the heat dissipation plate 83A includes a clamped portion clamped by the first electrode 55 and the second electrode 56 and a connecting member 24 extending from the clamped portion to the flow path forming member 20 (see Figure 3 ) an extension of.

[0074] The third heat sink 83 may also constitute a part of the refrigerant flow path through the end surface 83B in the surface direction of the heat sink 83A, in other words, the end surface 83B at the front end of the extension portion of the heat sink 83A and the inner side surface of the connecting member 24. In addition, the third heat sink 83 is thermally connected to at least one of the first heat sink 81 and the second heat sink 82 through a heat conducting member.

[0075] For example, the heat conducting component 84 is thermally connected to the third heat dissipating component 83 and the first heat dissipating component 81. For example, the heat conducting component 85 is thermally connected to the third heat dissipating component 83 and the second heat dissipating component 82. The heat conducting components 84 and 85 are preferably metals with Cu or Al as a main component. The heat conducting components 84 and 85 and the first heat dissipating component 81, the second heat dissipating component 82 and the third heat dissipating component 83 can be joined by a joining component such as solder.

[0076] Thus, the semiconductor module 1 includes the first heat sink 81 , the second heat sink 82 , the third heat sink 83 and the heat conducting members 84 and 85 . Therefore, the heat dissipation efficiency can be improved by the three-layer cooling structure of the first heat sink 81 , the second heat sink 82 and the third heat sink 83 .

[0077] For example, the heat generated from the first semiconductor element 5A is transmitted through Figure 4 The paths L1, L2, and L3 indicated by bold arrows and the path L4 indicated by a bold dashed arrow are transferred to the refrigerant in the refrigerant flow path to dissipate heat.

[0078] Specifically, the heat generated from the first semiconductor element 5A is dissipated via the refrigerant transferred to the refrigerant flow path through the path L1 passing through the third heat sink 83 , the second semiconductor element 5B, the second substrate 60 , and the second heat sink 82 .

[0079] In addition, the heat generated from the first semiconductor element 5A is transferred to the refrigerant in the refrigerant flow path and dissipated via the path L2 passing through the first substrate 40 and the first heat sink 81. In addition, the heat generated from the first semiconductor element 5A is transferred to the refrigerant in the refrigerant flow path and dissipated via the path L3 passing through the third heat sink 83, the heat conduction members 84 and 85, the first heat sink 81, and the second heat sink 82.

[0080] When the third heat sink 83 is thermally connected to the connecting member 24 of the flow path forming member 20 , the heat generated by the first semiconductor element 5A is transferred to the refrigerant in the refrigerant flow path via the path L4 from the third heat sink 83 to the connecting member 24 and dissipated.

[0081] The heat generated from the second semiconductor element 5B is also transferred to the refrigerant in the refrigerant flow path through the paths L1, L2, L3, and L4 to dissipate the heat. Thus, even if the first semiconductor element 5A and the second semiconductor element 5B are overlapped in a plan view to reduce the occupied area of ​​the semiconductor module 1, the heat dissipation efficiency can be improved by the three-layer cooling structure of the first heat dissipation component 81, the second heat dissipation component 82, and the third heat dissipation component 83.

[0082] In the semiconductor module 1 , the first heat sink 81 , the first substrate 40 , the first semiconductor element 5A, the third heat sink 83 , the second semiconductor element 5B, the second substrate 60 , and at least a portion of the second heat sink 82 are stacked in the thickness direction.

[0083] Thus, in the semiconductor module 1, part of the heat generated from the first semiconductor element 5A is dissipated via the second semiconductor element 5B. Also, in the semiconductor module 1, part of the heat generated from the second semiconductor element 5B is dissipated via the first semiconductor element 5A.

[0084] Furthermore, compared with a case where the first heat sink 81 , the first substrate 40 , the first semiconductor element 5A, the third heat sink 83 , the second semiconductor element 5B, the second substrate 60 , and the second heat sink 82 are arranged flat, the semiconductor module 1 can improve heat dissipation efficiency while reducing the occupied area.

[0085] When the third heat sink 83 is a flat plate, the insulating material of the third heat sink 83 is preferably in surface contact with the first electrode 55 of the first semiconductor element 5A and the second electrode 56 of the second semiconductor element 5B to promote heat dissipation.

[0086] Therefore, the first electrode 55 and the second electrode 56 are preferably substantially flat, and flat plate electrodes mainly composed of Cu or Al may be used. The flat plate electrodes may be provided with a bent portion for making the height uniform and connected to a DBC substrate or the like.

[0087] On the other hand, the third heat sink 83 extends to a portion not sandwiched between the first semiconductor element 5A and the second semiconductor element 5B, and is thermally connected to the first heat sink 81 , the second heat sink 82 , and the refrigerant flow path.

[0088] In this case, in order to stack the first electrode 55 and the second electrode 56 without interfering with the third heat sink 83 , the bent portions of the first electrode 55 and the second electrode 56 are provided outside the region in contact with the third heat sink 83 .

[0089] Furthermore, the insulating material of the third heat sink 83 may have a portion where a portion of the heat sink 83A is not covered so that the third heat sink 83 and the lead-out portions of the sensing terminals of the first semiconductor element 5A and the second semiconductor element 5B do not interfere with each other.

[0090] The third heat dissipating member 83 may have a necessary thickness and play a function of forming a desired gap between the first semiconductor element 5A and the second semiconductor element 5B so that the extraction lines of the first semiconductor element 5A and the second semiconductor element 5B do not interfere with each other.

[0091] In addition, the extended portion of the third heat sink 83 that extends to the portion not clamped by the first semiconductor element 5A and the second semiconductor element 5B may also be provided with a three-dimensional shape that is not an extended flat plate, and is used for thermal connection with the first heat sink 81, the second heat sink 82 and the refrigerant flow path.

[0092] The three-dimensional shape of the extension portion can be formed by processing the heat dissipation member itself. In addition, the heat dissipation member can be made into a flat plate, and a member that can be thermally connected to the first heat dissipation member 81, the second heat dissipation member 82 and the refrigerant flow path by post-installation can be prepared.

[0093] The insulating material of the third heat sink 83 only needs to be provided at locations in contact with the first electrode 55 and the second electrode 56 on the first semiconductor element 5A and the second semiconductor element 5B, but may also be provided on the entire surface of the heat sink 83A.

[0094] In addition, as for the insulating material, if the thickness is less than 0.5 mm and the thermal conductivity is greater than 1 W / m·K, the thermal influence is slight even in terms of thermal connection between the third heat sink 83 and the first heat sink 81, the second heat sink 82 and the refrigerant flow path.

[0095] [4. Structure of semiconductor module according to a variation of the embodiment]

[0096] Next, refer to Figure 5 and Figure 6 , structures of semiconductor module units 100A and 100B according to a modified example of the embodiment will be described. Figure 5 1 is a cross-sectional view of a semiconductor module unit 100A according to a first modified example of the embodiment. Figure 6 1 is a cross-sectional view of a semiconductor module unit 100B according to a second modification of the embodiment.

[0097] Figure 5 and Figure 6 The flow path forming member 20 of the semiconductor module units 100A and 100B shown in FIG. Figure 3 The flow path forming components shown are the same. Figure 5 and Figure 6 In the figure, the flow path forming components are omitted.

[0098] exist Figure 3 In the semiconductor module 1 shown, the heat transfer members 84 and 85 connect the ends of the heat dissipation plates 81A and 82A of the first heat dissipation member 81 and the second heat dissipation member 82 in the surface direction and the end of the heat dissipation plate 83A of the third heat dissipation member 83 in the surface direction.

[0099] Furthermore, the heat conducting members 84 and 85 connect the portions of the heat dissipating plates 81A and 82A of the first heat dissipating member 81 and the second heat dissipating member 82 inside the end portions in the surface direction and the portions of the heat dissipating plate 83A of the third heat dissipating member 83 inside the end portions in the surface direction.

[0100] However, the structure of the heat conducting members 84 and 85 of the embodiment is not limited to Figure 3 For example, Figure 5 As in the semiconductor module 1A shown in the figure, the heat transfer members 84 and 85 may connect the heat dissipation plates 81A and 82A of the first heat dissipation member 81 and the second heat dissipation member 82 and the heat dissipation plate 83A of the third heat dissipation member 83 only at the ends in the surface direction.

[0101] That is, the heat conducting members 84 and 85 that connect the portions of the heat dissipating plates 81A and 82A of the first heat dissipating member 81 and the second heat dissipating member 82 to the portions of the heat dissipating plates 83A of the third heat dissipating member 83 to ...3A of the third heat dissipating member 83 may be omitted. Figure 5 Either of the heat conducting members 84 and 85 shown may be omitted.

[0102] Thus, the semiconductor module 1A can realize a three-layer cooling structure while reducing the material cost of the heat transfer members 84 and 85 , and thus can improve cooling efficiency compared to a semiconductor module not including the third heat dissipating member 83 and the heat transfer members 84 and 85 .

[0103] In addition, if Figure 6 As shown, the semiconductor module 1B can also be Figure 3 The semiconductor module 1 shown omits the structure of the heat dissipation pin 86. As a result, the semiconductor module 1B can reduce the material cost corresponding to the heat dissipation pin 86, and thus, by realizing a three-layer cooling structure while suppressing the cost, the cooling efficiency can be improved compared to a semiconductor module that does not have the third heat dissipation component 83 and the heat conduction components 84 and 85.

[0104] In addition, the structures of the first heat sink 81 , the second heat sink 82 , the third heat sink 83 , the heat conduction members 84 and 85 , and the heat sink pins 86 described in this embodiment may be arbitrarily combined.

[0105] For example, the heat dissipation pins 86 may not be provided, may be provided on both the first heat dissipation member 81 and the second heat dissipation member 82 , or may be provided on at least one of the first heat dissipation member 81 and the second heat dissipation member 82 .

[0106] Furthermore, as long as at least the end portion of the third heat dissipating member 83 in the surface direction is thermally connected to the connecting member 24 of the flow path forming member 20 , the heat conducting members 84 and 85 may not be provided, or only one of them may be provided.

[0107] Furthermore, the present technology can adopt the following structures.

[0108] (1) A semiconductor module comprising:

[0109] A first substrate having a first semiconductor element disposed on one main surface and a first heat dissipation member disposed on the other main surface;

[0110] a second substrate disposed so as to face the first substrate, having a second semiconductor element disposed on one of the main surfaces facing the one main surface of the first substrate and a second heat dissipating member disposed on the other main surface; and

[0111] A third heat dissipation component, at least a portion of which is clamped by a first electrode and a second electrode, wherein the first electrode is arranged on a main surface of the first semiconductor element facing the second semiconductor element, and the second electrode is arranged on a main surface of the second semiconductor element facing the first semiconductor element.

[0112] (2) The semiconductor module according to (1), wherein:

[0113] A surface of at least a portion of the third heat dissipating member sandwiched between the first electrode and the second electrode is covered with an insulating material.

[0114] (3) The semiconductor module according to (1) or (2), wherein:

[0115] The first heat dissipating member includes a flat heat dissipating plate, and a main surface of the heat dissipating plate opposite to a main surface facing the first substrate constitutes a part of an inner side surface of the refrigerant flow path.

[0116] (4) The semiconductor module according to (3), wherein:

[0117] The first heat dissipating member includes heat dissipating pins or heat dissipating fins protruding from a main surface of a portion of an inner side surface of the heat dissipating plate constituting the refrigerant flow path toward the refrigerant flow path.

[0118] (5) The semiconductor module according to any one of (1) to (4), wherein:

[0119] The second heat dissipating member includes a flat heat dissipating plate, and a main surface of the heat dissipating plate opposite to a main surface facing the second substrate constitutes a part of an inner side surface of the refrigerant flow path.

[0120] (6) The semiconductor module according to (5), wherein:

[0121] The second heat radiating member includes heat radiating pins or heat radiating fins protruding from a main surface of a portion of the inner side surface of the heat radiating plate constituting the refrigerant flow path into the refrigerant flow path.

[0122] (7) The semiconductor module according to any one of (1) to (6), wherein:

[0123] The third heat sink member includes a flat heat sink, and an end surface of the heat sink in a surface direction constitutes a part of an inner surface of the refrigerant flow path.

[0124] (8) The semiconductor module according to any one of (1) to (7), wherein:

[0125] A heat conducting member is provided, the heat conducting member connecting at least one of the first heat dissipating member and the second heat dissipating member and the third heat dissipating member.

[0126] (9) The semiconductor module according to (8), wherein:

[0127] The first heat dissipation component, the second heat dissipation component and the third heat dissipation component include flat heat dissipation plates.

[0128] The thermally conductive member connects an end portion of at least one of the first heat dissipating member and the second heat dissipating member in a plane direction of the heat dissipating plate and an end portion of the third heat dissipating member in a plane direction of the heat dissipating plate.

[0129] (10) The semiconductor module according to (9), wherein:

[0130] The thermally conductive member connects a portion of the heat dissipation plate of at least one of the first heat dissipation member and the second heat dissipation member, which is located inside the end portion in the plane direction, and a portion of the heat dissipation plate of the third heat dissipation member, which is located inside the end portion in the plane direction.

[0131] (11) The semiconductor module according to any one of (1) to (10), wherein:

[0132] The first heat dissipating member, the first substrate, the first semiconductor element, the third heat dissipating member, the second semiconductor element, the second substrate, and at least a portion of the second heat dissipating member are stacked in a thickness direction.

[0133] (12) The semiconductor module according to any one of (1) to (11), wherein:

[0134] The first semiconductor element and the second semiconductor element and components located above and below the first semiconductor element and the second semiconductor element are bonded by a sintered material.

[0135] (13) The semiconductor module according to (12), wherein:

[0136] The above-mentioned sintering material is silver or copper.

[0137] (14) A semiconductor module unit, comprising:

[0138] A plurality of semiconductor modules according to any one of (1) to (13) arranged in a row; and

[0139] The flow path forming member accommodates the plurality of semiconductor modules and forms a flow path for a refrigerant for cooling the plurality of semiconductor modules.

[0140] Explanation of symbols

[0141] 1, 1A, 1B—semiconductor module, 20—flow path forming member, 21—inflow portion, 22—outflow portion, 23—lower member, 24—connecting member, 25—upper member, 3—power supply terminal, 31—positive terminal, 32—negative terminal, 40—first substrate, 41—insulating substrate, 42, 43—conductive layer, 5—circuit portion, 5A—first semiconductor element, 5B—second semiconductor element, 51, 52—transistor, 53, 54—diode, 55—first electrode, 56—second electrode, 60—second substrate, 6 1—insulating substrate, 62, 63—conductive layer, 7—input / output terminal, 71—load terminal, 72—control terminal, 81—first heat dissipation component, 81A—heat dissipation plate, 81B—main surface, 82—second heat dissipation component, 82A—heat dissipation plate, 82B—main surface, 83—third heat dissipation component, 83A—heat dissipation plate, 83B—end surface, 83C—insulating material, 84, 85—heat conducting component, 86—heat dissipation pin, 100, 100A, 100B—semiconductor module unit, L1, L2, L3, L4—path.

Claims

1. A semiconductor module, characterized in that: have: A first substrate having a first semiconductor element disposed on one main surface and a first heat dissipation member disposed on the other main surface; a second substrate disposed so as to face the first substrate, wherein a second semiconductor element is provided on one main surface facing the one main surface of the first substrate, and a second heat dissipation member is provided on the other main surface; as well as A third heat dissipation component, at least a portion of which is clamped by a first electrode and a second electrode, wherein the first electrode is arranged on a main surface of the first semiconductor element facing the second semiconductor element, and the second electrode is arranged on a main surface of the second semiconductor element facing the first semiconductor element.

2. The semiconductor module according to claim 1, characterized in that A surface of at least a portion of the third heat dissipating member sandwiched between the first electrode and the second electrode is covered with an insulating material.

3. The semiconductor module according to claim 1 or 2, characterized in that The first heat dissipating member includes a flat heat dissipating plate, and a main surface of the heat dissipating plate opposite to a main surface facing the first substrate constitutes a part of an inner side surface of a refrigerant flow path.

4. The semiconductor module according to claim 3, characterized in that The first heat dissipating member includes heat dissipating pins or heat dissipating fins protruding from a main surface of a portion of the inner side surface of the heat dissipating plate constituting the refrigerant flow path toward the refrigerant flow path.

5. The semiconductor module according to claim 1 or 2, characterized in that: The second heat dissipating member includes a flat heat dissipating plate, and a main surface of the heat dissipating plate opposite to a main surface facing the second substrate constitutes a part of an inner side surface of the refrigerant flow path.

6. The semiconductor module according to claim 5, characterized in that The second heat radiating member includes heat radiating pins or heat radiating fins protruding from a main surface of a portion of the inner side surface of the heat radiating plate constituting the refrigerant flow path toward the refrigerant flow path.

7. The semiconductor module according to claim 1 or 2, characterized in that: The third heat sink member includes a flat heat sink, and an end surface of the heat sink in a surface direction constitutes a part of an inner side surface of a refrigerant flow path.

8. The semiconductor module according to claim 1 or 2, characterized in that: A heat conducting member is provided that connects at least one of the first heat dissipating member and the second heat dissipating member and the third heat dissipating member.

9. The semiconductor module according to claim 8, characterized in that The first heat dissipation component, the second heat dissipation component and the third heat dissipation component include flat heat dissipation plates. The thermally conductive member connects an end portion of at least one of the first heat dissipating member and the second heat dissipating member in the surface direction of the heat dissipating plate and an end portion of the third heat dissipating member in the surface direction of the heat dissipating plate.

10. The semiconductor module according to claim 9, characterized in that The thermally conductive member connects a portion of at least one of the first and second heat dissipating members located inside an end portion of the heat dissipating plate in a plane direction and a portion of the third heat dissipating member located inside an end portion of the heat dissipating plate in a plane direction.

11. The semiconductor module according to claim 1 or 2, characterized in that: The first heat dissipating member, the first substrate, the first semiconductor element, the third heat dissipating member, the second semiconductor element, the second substrate, and at least a portion of the second heat dissipating member are stacked in a thickness direction.

12. The semiconductor module according to claim 1 or 2, characterized in that: The first semiconductor element and the second semiconductor element and components located above and below the first semiconductor element and the second semiconductor element are bonded by a sintered material.

13. The semiconductor module according to claim 12, characterized in that The sintering material is silver or copper.

14. A semiconductor module unit, characterized in that: include: A plurality of semiconductor modules according to claim 1 or 2 arranged in a row; as well as The flow path forming member accommodates the plurality of semiconductor modules and forms a flow path for a refrigerant for cooling the plurality of semiconductor modules.

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