Light source device

Abstract

The light source device includes one or more first light source units, one or more second light source units, and a light shielding member disposed between the first light source units and the second light source units. The first light source unit has two or more first stacked bodies in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked in a first direction. The second light source unit has one or more second laminated bodies in which a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are laminated in the first direction. In the first light source unit, the two or more first laminated bodies are continuously laminated in the first direction. The number of the first laminates included in the first light source unit is greater than the number of the second laminates included in the second light source unit.

Description

Technical Field

[0001] The present disclosure relates to a light source device. Background Art

[0002] In recent years, mobile terminals such as smartphones are equipped with cameras, and flashes including light source devices are installed to provide auxiliary light to the cameras. Cameras can adjust the viewing angle by digital zoom, for example. Therefore, it is required that the light source device irradiates appropriate auxiliary light corresponding to the viewing angle that the camera can select.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: (Japan) Utility Model Registration No. 3148493 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] An object of an embodiment of the present disclosure is to provide a light source device capable of irradiating appropriate auxiliary light.

[0008] Technical solutions for solving technical problems

[0009] The light source device of the embodiment of the present disclosure comprises: one or more first light source units; one or more second light source units; and a light shielding component, which is arranged between the first light source unit and the second light source unit. The first light source unit has two or more first stacks, and the first stacks are stacked along a first direction with an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The second light source unit has one or more second stacks, and the second stacks are stacked along the first direction with an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. In the first light source unit, the two or more first stacks are continuously stacked along the first direction. The number of the first stacks included in the first light source unit is greater than the number of the second stacks included in the second light source unit.

[0010] The light source device of the embodiment of the present disclosure comprises: one or more first light source units; one or more second light source units; and a light shielding component, which is arranged between the first light source unit and the second light source unit. The first light source unit has two or more first stacks, which are stacked with a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The second light source unit has one or more second stacks, which are stacked with a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. In the first light source unit, the two or more first stacks are stacked continuously along the stacking direction of the first stack. The number of the first stacks included in the first light source unit is greater than the number of the second stacks included in the second light source unit.

[0011] Effects of the Invention

[0012] According to the embodiment of the present disclosure, it is possible to realize a light source device that can irradiate appropriate auxiliary light. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a cross-sectional view showing the light source device according to the first embodiment.

[0014] Figure 2 It is a plan view showing the light source device according to the first embodiment.

[0015] Figure 3 yes Figure 2 A cross-sectional view along line III-III is shown.

[0016] Figure 4 It is a diagram showing the operation of the light source device according to the first embodiment.

[0017] Figure 5A It is a plan view showing a light source device according to a first modification example of the first embodiment.

[0018] Figure 5B It is a plan view showing a light source device according to a second modified example of the first embodiment.

[0019] Fig. 6A It is a plan view showing a light source device according to a third modified example of the first embodiment.

[0020] Figure 6B It is a plan view showing a light source device according to a fourth modified example of the first embodiment.

[0021] Figure 7 It is a plan view showing a light source device according to a second embodiment.

[0022] Figure 8 It is a cross-sectional view showing a light source device according to a third embodiment.

[0023] Fig. 9 It is a cross-sectional view showing a light source device according to a fourth embodiment.

[0024] Fig.10 It is a cross-sectional view showing a light source device according to a modified example of the fourth embodiment.

[0025] Fig.11 It is a cross-sectional view showing a light source device according to a fifth embodiment.

[0026] Fig.12 It is a plan view showing a light source device according to a sixth embodiment.

[0027] Fig.13 is a diagram for explaining the effect of the sixth embodiment. Fig.12 A cross-sectional view taken along line XIII-XIII is shown.

[0028] Fig.14A It is a plan view showing a light source device according to a first modified example of the sixth embodiment.

[0029] Fig. 14B It is a plan view showing a light source device according to a second modified example of the sixth embodiment.

[0030] Fig.15A It is a plan view showing a light source device according to a third modified example of the sixth embodiment.

[0031] Fig. 15B It is a plan view showing a light source device according to a fourth modified example of the sixth embodiment.

[0032] Fig.16 It is a plan view showing a light source device according to a seventh embodiment.

[0033] Fig.17 It is a cross-sectional view showing a light source device according to an eighth embodiment.

[0034] Fig.18 It is a cross-sectional view showing a light source device according to a first modified example of the eighth embodiment.

[0035] Fig.19 It is a cross-sectional view showing a light source device according to a second modified example of the eighth embodiment.

[0036] Fig. 20A It is a cross-sectional view showing a light source device according to a ninth embodiment.

[0037] Fig. 20B It is a cross-sectional view showing a light source device according to a first modified example of the ninth embodiment.

[0038] Fig. 20C It is a cross-sectional view showing a light source device according to a second modified example of the ninth embodiment.

[0039] Fig.20D It is a cross-sectional view showing a light source device according to a third modified example of the ninth embodiment.

[0040] Fig.21 It is a cross-sectional view showing a light source device according to a tenth embodiment.

[0041] Fig.22A It is a cross-sectional view showing a method for manufacturing a light source device according to the eleventh embodiment.

[0042] Fig. 22B It is a cross-sectional view showing a method for manufacturing a light source device according to the eleventh embodiment.

[0043] Fig. 22C It is a cross-sectional view showing a method for manufacturing a light source device according to the eleventh embodiment.

[0044] Fig.22D It is a cross-sectional view showing a method for manufacturing a light source device according to the eleventh embodiment.

[0045] Fig.22E It is a cross-sectional view showing a method for manufacturing a light source device according to the eleventh embodiment. DETAILED DESCRIPTION

[0046] The light source device of this embodiment is used as a light source for an electric flash, for example. Hereinafter, the structure and function of the light source device will be described in detail, taking a light source device that is mounted together with a camera on a mobile terminal such as a smartphone and used as a flash light source for shooting as an example. It should be noted that in this specification, "angle of view" refers to the range of the image captured in the image sensor, that is, the range reflected in the image sensor, expressed as an angle.

[0047] <First Embodiment>

[0048] Figure 1 It is a cross-sectional view showing the light source device according to this embodiment.

[0049] Figure 2 It is a top view showing the light source device according to this embodiment.

[0050] Figure 3 yes Figure 2 A cross-sectional view along line III-III is shown.

[0051] It should be noted that the various figures are schematic, and are appropriately emphasized and simplified. In addition, in the relationship between the various figures, the size ratios of the various components are not necessarily consistent. As a sectional view, an end view that only shows the cut surface is sometimes used. The same applies to the other figures described later. In the accompanying drawings, sometimes a part of the light emitted by the first light source unit is represented by a double-dotted arrow, and a part of the light emitted by the second light source unit is represented by a dotted arrow.

[0052] like Figure 1 to Figure 3 As shown, the light source device 1 of the present embodiment includes one or more first light source units 10 and one or more second light source units 20. The first light source unit 10 includes two or more first stacks, which are stacked with a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The two or more first stacks are stacked continuously along the stacking direction of the first stack. In the present embodiment, the first light source unit 10 includes two or more first stacks, which are stacked with a p-type semiconductor layer as a first conductive type semiconductor layer, an active layer, and an n-type semiconductor layer as a second conductive type semiconductor layer along a first direction. The second light source unit 20 includes one or more second stacks, which are stacked with a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. In the present embodiment, the second light source unit 20 includes one or more second stacks, which are stacked with a p-type semiconductor layer as a first conductive type semiconductor layer, an active layer, and an n-type semiconductor layer as a second conductive type semiconductor layer along a first direction.

[0053] In this specification, for the sake of convenience, an XYZ orthogonal coordinate system is used. The direction of the stacked semiconductor layers is set as the "first direction Z". In addition, one of the two directions in which the first light source unit 10 and the second light source unit 20 are arranged is set as the "second direction X", and the other is set as the "third direction Y". In the first direction Z, the direction of the stacked semiconductor layers is also called "up", and the opposite direction is also called "down", but this expression is also for convenience and has nothing to do with the direction of gravity. In this specification, looking down means observing the object from the main light emitting surface side of the first light source unit and the second light source unit (in other words, the first direction Z side).

[0054] In addition to these, the light source device 1 may include a wiring substrate 80 , a light shielding member 70 , a lens member 40 , a first power supply circuit 61 , and a second power supply circuit 62 .

[0055] like Figure 2As shown, in the present embodiment, a first light source unit 10 and eight second light source units 20 are arranged on a wiring substrate 80. The first light source unit 10 is marked with light hatching, and the second light source unit 20 is not marked with hatching. When viewed from above, one first light source unit 10 and eight second light source units 20 are arranged in a matrix of three rows and three columns to form a light-emitting area 50. When viewed from above, the first light source unit 10 and the second light source unit 20 are rectangles of approximately the same size (i.e., area), and the shape of the light-emitting area 50 is also a rectangle. The top-view area of ​​each of the first light source unit 10 and the second light source unit 20 can be appropriately changed according to the top-view size of the light source device 1 and the number of light source units, for example, to 0.001mm 2 Above and 1.5mm 2 In the light emitting area 50, not all of the first light source units 10 and the second light source units 20 are always on, and the first light source units 10 and the second light source units 20 (hereinafter collectively referred to as "light source units") can be controlled individually or in groups. Figure 2 In order to facilitate the understanding of the drawings, the lens component 40, the first power supply circuit 61 and the second power supply circuit 62 are omitted.

[0056] The first light source unit 10 is arranged in the central area of ​​the light emitting area 50. The second light source unit 20 is arranged in the peripheral area of ​​the light emitting area 50. It should be noted that the "central area of ​​the light emitting area 50" refers to an area including the center of the light emitting area 50 and away from the outer edge of the light emitting area 50. The "peripheral area of ​​the light emitting area 50" refers to an area arranged around the central area and including the outer edge of the light emitting area 50. Therefore, when viewed from above, two or more second light source units 20 are arranged with the first light source unit 10 between them.

[0057] The first light source unit 10 will be described.

[0058] like Figure 2 and Figure 3 As shown, the first light source unit 10 includes a first stack 11 and a first stack 12. That is, the first light source unit 10 includes two first stacks. In the first light source unit 10, the first stack 11 and the first stack 12 are stacked along a first direction Z (in other words, the stacking direction of the first stack). In addition, the first light source unit 10 may also have an n-side electrode 15n, a p-side electrode 15p and a first wavelength conversion component 16. In addition, the first light source unit 10 may also have a first light-transmitting component 17.

[0059] In the first stack 11, a p-type semiconductor layer 11p, an active layer 11a, and an n-type semiconductor layer 11n are stacked along the first direction Z. In the first stack 12, a p-type semiconductor layer 12p, an active layer 12a, and an n-type semiconductor layer 12n are stacked along the first direction Z. Thus, the first light source unit 10 including the first stack 11 and the first stack 12 includes a light emitting diode (LED). Figure 3 As shown, in the first light source unit 10 , a p-type semiconductor layer 12 p , an active layer 12 a , an n-type semiconductor layer 12 n , a p-type semiconductor layer 11 p , an active layer 11 a , and an n-type semiconductor layer 11 n are sequentially stacked along the first direction Z.

[0060] The first stack 11 and the first stack 12 are continuously stacked along the first direction Z. In the present embodiment, "continuous stacking" means that the first stack 11 and the first stack 12 are directly connected through the semiconductor layer. In the present embodiment, the p-type semiconductor layer 11p of the first stack 11 is connected to the n-type semiconductor layer 12n of the first stack 12. The first stack 11 and the first stack 12 can also be joined via a semiconductor layer such as a tunnel junction layer. Thus, a plurality of first stacks can be stacked, and the number of active layers of the light source portion can be arbitrarily increased. The tunnel junction layer will be described later.

[0061] It should be noted that the first stack 11 and the first stack 12 may also be stacked discontinuously, and they may be joined via conductive components such as electrodes. In this case, the electrode may be a transparent electrode made of ITO (indium tin oxide) or the like, or an electrode made of metal. In such a manner, a plurality of first stacks may be stacked, so the number of active layers of the light source unit may be increased arbitrarily.

[0062] An n-side electrode 15n is provided at a position of the first stack 11 in contact with the n-type semiconductor layer 11n, and the n-type semiconductor layer 11n is connected to the wiring substrate 80 via the n-side electrode 15n. A p-side electrode 15p is provided at a position of the first stack 12 in contact with the p-type semiconductor layer 12p, and the p-type semiconductor layer 12p is connected to the wiring substrate 80 via the p-side electrode 15p. It should be noted that in this specification, "connection" refers to electrical connection. The n-side electrode 15n and the p-side electrode 15p may also be connected to the wiring substrate 80 via a bonding material. The bonding material is, for example, solder, gold-tin alloy (AuSn) or an anisotropic conductive film (Anisotropic Conductive Film: ACF).

[0063] The n-side electrode 15n and the p-side electrode 15p are connected to a first power supply circuit 61 provided in the wiring substrate 80. The first power supply circuit 61 supplies a first voltage V1 to the first stack 11 and the first stack 12 connected in series.

[0064] A first wavelength conversion component 16 is arranged on the first stack 11. The first wavelength conversion component 16 is a component into which light emitted by at least one first stack (the first stack 11 and the first stack 12) included in the first light source unit 10 is incident and emits the light after wavelength conversion. The first wavelength conversion component 16 has at least a wavelength conversion substance. For example, the first wavelength conversion component 16 may also have a translucent material and a wavelength conversion substance, and the wavelength conversion substance is dispersed in the translucent material. The translucent material may be, for example, an organic material such as silicone resin or epoxy resin, or an inorganic material such as glass. The wavelength conversion substance may be, for example, the wavelength conversion substance described later. In addition, the first wavelength conversion component 16 may also contain titanium oxide (TiO2), silicon dioxide (SiO2), aluminum oxide (Al2O3), etc. as fillers. A bonding component may also be arranged between the first stack 11 and the first wavelength conversion component 16.

[0065] A first light-transmitting component 17 may also be arranged on the first wavelength conversion component 16. The first light-transmitting component 17 is arranged for the purpose of dispersing light emitted from the first stack 11 or the first stack 12 or both thereof, and light emitted from the first wavelength conversion component 16, or protecting these components. The first light-transmitting component 17 has a resin material. In addition, the first light-transmitting component 17 may also include, for example, a filler that scatters light into the resin material. The resin material includes, for example, silicone resin or epoxy resin. The filler includes, for example, titanium oxide, silicon dioxide, aluminum oxide, etc., and may also include a combination thereof.

[0066] The second light source unit 20 will be described.

[0067] The second light source unit 20 includes a second stacked body 21. Figure 3 As shown, in the second light source unit 20 , a p-type semiconductor layer 21 p , an active layer 21 a , and an n-type semiconductor layer 21 n are sequentially stacked toward the first direction Z. Thus, the second light source unit 20 including the second stacked body 21 includes a light emitting diode (LED).

[0068] In addition, the second light source unit 20 may also have an n-side electrode 25n, a p-side electrode 25p and a second wavelength conversion component 26. In addition to this, the second light source unit 20 may also have a second translucent component 27. The second translucent component 27 may also be arranged on the second wavelength conversion component 26. The second translucent component 27 is arranged for the purpose of dispersing the light emitted from the second stack 21 or the second stack 22 or both thereof and the light emitted from the second wavelength conversion component 26, or protecting these components. A bonding component may also be arranged between the second stack 21 and the second wavelength conversion component 26. The materials of the second wavelength conversion component 26 and the second translucent component 27 are, for example, the same as the materials of the first wavelength conversion component 16 and the first translucent component 17, respectively. However, the contents of the wavelength conversion substances may also be different from each other.

[0069] An n-side electrode 25n is provided at a position of the second stack 21 in contact with the n-type semiconductor layer 21n, and the n-type semiconductor layer 21n is connected to the wiring substrate 80 via the n-side electrode 25n. A p-side electrode 25p is provided at a position of the second stack 21 in contact with the p-type semiconductor layer 21p, and the p-type semiconductor layer 21p is connected to the wiring substrate 80 via the p-side electrode 25p. The n-side electrode 25n and the p-side electrode 25p may also be bonded to the wiring substrate 80 via the above-mentioned bonding material. The n-side electrode 25n and the p-side electrode 25p are connected to the second power supply circuit 62 via the wiring substrate 80. The second power supply circuit 62 supplies the second voltage V2 to the second light source unit 20.

[0070] The materials of the first stack 11, the first stack 12, and the second stack 21 are preferably nitride semiconductors. This allows the wavelength conversion material contained in the first wavelength conversion member 16 and the second wavelength conversion member 26 to be efficiently excited. Nitride semiconductors are mainly composed of the general formula In x Al y Ga 1-x-yN(0≤x, 0≤y, x+y≤1) represents. From the viewpoints of luminous efficiency, excitation of wavelength conversion material and color mixing relationship with its luminescence, the peak wavelength of light emitted by the first stack 11 and the first stack 12, and the second stack 21 (in other words, the first light source unit 10 and the second light source unit 20) is preferably in the range of 400nm to 490nm, more preferably in the range of 440nm to 475nm. It should be noted that light in the range of 500nm to 570nm, or 600nm to 650nm can also be emitted. The peak wavelength or color of light emitted by the first stack 11 and the first stack 12, and the second stack 21 can be substantially the same, or the peak wavelength or color of at least one of the lights can be different. The first light source unit and the second light source unit can each include a laser diode (Laser Diode: LD). It should be noted that in this embodiment, the first conductive semiconductor layer is a p-type semiconductor layer and the second conductive semiconductor layer is an n-type semiconductor layer, but the first conductive semiconductor layer may also be an n-type semiconductor layer and the second conductive semiconductor layer may also be a p-type semiconductor layer.

[0071] As the wavelength conversion material contained in the first wavelength conversion member 16 and the second wavelength conversion member 26, for example, yttrium-aluminum-garnet-based phosphors (e.g., (Y, Gd) 3 (Al, Ga) 5 O 12 : Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al, Ga)5O 12 : Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al, Ga)5O 12 : Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate phosphors (e.g. (Ba, Sr, Ca, Mg)2SiO4:Eu), β-sialon phosphors (e.g. (Si, Al)3(O, N)4:Eu), or α-sialon phosphors (e.g. Ca(Si, Al) 12 (O, N) 16 :Eu) and other oxynitride phosphors, LSN phosphors (e.g. (La, Y)3Si6N 11Nitride phosphors such as BSESN phosphors (e.g., (Ba, Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu), or SCASN phosphors (e.g., (Sr, Ca)AlSiN3:Eu), KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn (here, x satisfies 0<x<1) or fluoride-based phosphors such as MGF-based phosphors (for example, 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots with a perovskite structure (for example, (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I)3, where FA and MA represent formamidine and methylammonium, respectively), II-VI group quantum dots (for example, CdSe), III-V group quantum dots (for example, InP), or quantum dots with a chalcopyrite structure (for example, (Ag, Cu)(In, Ga)(S, Se)2), etc.

[0072] For example, the first stack 11 and the first stack 12 emit blue light. The wavelength conversion material contained in the first wavelength conversion component 16 absorbs a part of the blue light emitted by the first stack 11 and the first stack 12 and radiates yellow light. Thus, as the first light source unit 10 as a whole, blue light and yellow light are mixed to emit white light. It should be noted that the first wavelength conversion component 16 can also emit green light and red light by appropriately selecting the wavelength conversion material. Thus, as the first light source unit 10 as a whole, blue light, green light and red light are mixed to emit white light.

[0073] As with the first light source unit 10 described above, for example, the second stack 21 emits blue light. The wavelength conversion material included in the second wavelength conversion component 26 absorbs a portion of the blue light emitted by the second stack 21 and radiates yellow light. Thus, as the second light source unit 20 as a whole, blue light and yellow light are mixed to emit white light. In addition, the second wavelength conversion component 26 can also radiate green light and red light by appropriately selecting the wavelength conversion material. Thus, as the second light source unit 20 as a whole, blue light, green light and red light are mixed to emit white light.

[0074] In the present embodiment, a first power supply circuit 61 is provided for each first light source unit 10, and a second power supply circuit 62 is provided for each second light source unit 20. Therefore, in the present embodiment, there is one first power supply circuit 61 and eight second power supply circuits 62. Thus, the light source device 1 can control the first light source unit 10 and each second light source unit 20 independently of each other. It should be noted that, with respect to the plurality of second light source units 20, there may be at least one second power supply circuit 62.

[0075] The differences between the first light source unit 10 and the second light source unit 20 will be described.

[0076] As described above, in the present embodiment, the first light source unit 10 has two first stacks, and the second light source unit 20 has one second stack. Therefore, the number of first stacks included in the first light source unit 10 is greater than the number of second stacks included in the second light source unit 20. It should be noted that the number of first stacks included in the first light source unit 10 can be more than two, and the number of second stacks included in the second light source unit 20 can be more than one. In the present embodiment, if the same current is supplied to the first light source unit 10 and the second light source unit 20, theoretically, the light emission of the first light source unit 10 is approximately twice the light emission of the second light source unit 20.

[0077] In order to supply the same current to the first light source unit 10 and the second light source unit 20 , the first voltage V1 supplied by the first power supply circuit 61 to the first light source unit 10 is preferably at least twice the second voltage V2 supplied by the second power supply circuit 62 to the second light source unit 20 .

[0078] When the light emission of the first light source unit 10 is greater than the light emission of the second light source unit 20, it is preferred that the content of the wavelength conversion material contained in the first wavelength conversion component 16 is greater than the content of the wavelength conversion material contained in the second wavelength conversion component 26. Thus, it is possible to configure appropriate wavelength conversion materials according to the light emission of each light source unit, and it is possible to reduce the degradation of the wavelength conversion material caused by light. In addition, each light source unit can adjust the difference in light color between the light source units caused by the difference in light emission.

[0079] In addition, the wavelength conversion material may be contained in the bonding member provided between the first stacked body 11 and the first wavelength conversion member 16, and a third wavelength conversion member containing the wavelength conversion material may be further disposed on the first light-transmitting member 17. In these embodiments, the amount of the wavelength conversion material required for the first light source unit 10 can also be adjusted.

[0080] The shading member 70 is arranged between the first light source unit 10 and the second light source unit 20 and at the periphery of the light emitting area 50. The light emitting unit 71 is composed of the first light source unit 10, the second light source unit 20 and the shading member 70 covering them. The shading member 70 can be a member that reflects the light emitted by the first light source unit 10 and the second light source unit 20 and directs it toward the first direction Z, or can be a member that absorbs the light emitted by the first light source unit 10 and the second light source unit 20 and intersecting with the first direction Z. The shading member 70 is composed of, for example, a white or black resin material. In the shading member 70, for example, a filler is dispersed in the resin material. When the shading member 70 is white, as a filler, for example, a substance that scatters light, such as titanium oxide, silicon dioxide, or aluminum oxide, is used. When the shading member 70 is black, as a filler, for example, a substance that absorbs light, such as carbon or paint, is used. The resin material includes, for example, silicone resin or epoxy resin.

[0081] The lens component 40 is a component through which the light emitted by the first light source unit 10 and the light emitted by the second light source unit 20 pass. The lens component 40 only needs to include at least a lens 41. In the present embodiment, the lens component 40 is made of a light-transmitting material including a lens 41 and a support portion 42 for supporting the lens 41, and the lens 41 and the support portion 42 are formed integrally. An air layer 72 is sandwiched between the light-emitting portion 71 and the lens component 40. The lens component 40 is formed of a resin such as a polycarbonate resin, an acrylic resin, an epoxy resin, or a silicone resin, or glass.

[0082] The lens 41 is a biconvex lens. The lens 41 has an incident surface on the side of the first light source unit 10 and the second light source unit 20, and an emission surface on the side opposite to the incident surface (the first direction Z side). When viewed from above, the lens 41 covers the light-emitting area 50. The central axis 41c of the lens 41 extends in the first direction Z. When viewed from above, the central axis 41c of the lens 41 overlaps with the center of the light-emitting area 50. The light-emitting area 50 is, for example, doubly symmetrical about the central axis 41c of the lens 41.

[0083] The shape of the support portion 42 is frame-shaped or ring-shaped when viewed from above. Figure 1 The lower end of the middle support portion 42 is bonded to the wiring substrate 80. An adhesive member may be interposed between the lens member 40 and the wiring substrate 80. The adhesive member includes, for example, epoxy resin or silicone resin.

[0084] The wiring substrate 80 is a component on which the first light source unit 10 and the second light source unit 20 are mounted. Figure 1As shown, the lens component 40 can also be arranged on the wiring substrate 80. In the wiring substrate 80, wiring is provided inside and on the surface of the insulating substrate, and is electrically connected to the first power circuit 61 and the second power circuit 62. The insulating substrate includes, for example, polyimide resin, polyester resin, epoxy glass, BT resin (bismaleimide triazine resin), aluminum nitride (AlN), silicon nitride (Si3N4) or aluminum oxide. The wiring is formed of metals such as copper (Cu) and gold (Au). It should be noted that as the wiring substrate 80, an ASIC (Application Specific Integrated Circuit: an integrated circuit for a specific purpose) substrate can also be used.

[0085] Next, the operation of the light source device according to this embodiment will be described.

[0086] Figure 4 FIG. 1 is a diagram showing the operation of the light source device of this embodiment. Figure 4 , for ease of description, the first light source unit 10 , the second light source unit 20 , the lens 41 , and the wiring substrate 80 in the light source device 1 are illustrated.

[0087] like Figure 2 and Figure 3 As shown, in the light source device 1 of the present embodiment, two first stacks (i.e., the first stack 11 and the first stack 12) are provided in the first light source unit 10 disposed in the central area of ​​the light emitting area 50, and one second stack 21 is provided in the second light source unit 20 disposed in the peripheral area of ​​the light emitting area 50. Therefore, when the same current flows, the amount of light L1 emitted by one first light source unit 10 is greater than the amount of light L2 emitted by one second light source unit 20. Therefore, the light source device 1 has a higher luminous intensity toward the first direction Z.

[0088] like Figure 4 As shown, when the shooting angle of the linked camera is large, that is, when the camera shoots at a "wide angle", the light source device 1 irradiates light to the subject 101 that is relatively close to the light source device 1. In this case, the light source device 1 causes the first light source unit 10 and the second light source unit 20 to emit light, for example, in their entirety. The light L1 emitted by the first light source unit 10 and the light L2 emitted by the second light source unit 20 are focused by the lens 41 of the lens component 40, and then spread over a wide angle range to illuminate the entire subject 101. In this case, the first current I1 supplied by the first power supply circuit 61 to the first light source unit 10 may be greater than 30% and less than 70% of the second current I2 supplied by the second power supply circuit 62 to the second light source unit 20, so that the light emission of the first light source unit 10 and the light emission of each second light source unit 20 are at the same level.

[0089] In a camera, for example, when a telephoto lens is used for shooting, the telephoto lens has a long focal length and can enlarge distant objects. Since the angle of view is reduced by the amount by which distant objects can be enlarged, the range that can be shot becomes narrower, and therefore, in the light source device 1, it is necessary to emit light from the first light source unit 10 located only in the central area of ​​the light emitting area 50. On the other hand, for example, when a wide-angle lens is used for shooting, the focal length of the wide-angle lens is shorter than that of the telephoto lens and can enlarge the angle of view. Therefore, in the light source device 1, it is necessary to emit light from both the first light source unit 10 and the second light source unit 20 located in the central area and the peripheral area of ​​the light emitting area 50. When the shooting angle of view of the linked camera is narrow, that is, when the camera shoots at a "telephoto", the light source device 1 irradiates light to the subject 102 that is far from the light source device 1. In this case, for example, only the first light source unit 10 is emitted, and the second light source unit 20 is not emitted. The light L1 emitted by the first light source unit 10 is focused by the lens 41 of the lens member 40, and then spreads in a small angle range to irradiate the subject 102. The first light source unit 10 is provided with two first stacks (ie, the first stack 11 and the first stack 12 ). Therefore, the first light source unit 10 emits a large amount of light L1 and can brightly illuminate the subject 102 that is farther away from the light source device 1 than the subject 101 .

[0090] Next, the effects of this embodiment will be described.

[0091] In the range illuminated by the light source device 1, for example, the number of light source units that contribute to the illumination of a narrow "telephoto" is small. However, the narrower the illumination range (i.e., telephoto), the farther the distance between the light source device 1 and the subject is, so high light intensity is required. In the light source device 1 of the present embodiment, although the number of light source units that contribute to telephoto shooting (in other words, the first light source unit 10) is less than the number of light source units that contribute to wide-angle shooting (in other words, the total of the first light source unit 10 and the second light source unit 20), the number of first stacked bodies included in the first light source unit 10 is greater than the number of second stacked bodies included in the second light source unit 20, so it can be illuminated brightly. As described above, the light source device 1 can make the intensity distribution of the emitted light different when the linked camera shoots at a "wide angle" and when shooting at a "telephoto". As a result, light can be irradiated in a large angle range in the case of a "wide angle", and a small angle range can be brightly illuminated in the case of a "telephoto". In this way, even if the viewing angle of the linked camera changes, the light source device 1 can illuminate the subject brightly.

[0092] It should be noted that, assuming that the second light source unit has the same number of second stacks as the number of first stacks that can provide an appropriate amount of light when shooting at a "telephoto", the power invested to obtain a sufficient amount of light when shooting at a "wide angle" increases compared to a case where the number of second stacks is less than the number of first stacks, and the luminous efficiency may decrease. Therefore, the light source device 1 of this embodiment in which the number of first stacks is greater than the number of second stacks has a light amount for telephoto shooting, and can illuminate the subject with good luminous efficiency in wide-angle shooting. In this way, according to this embodiment, the light source unit with a large number of active layers is arranged in a specific place where a large amount of light is required, so that the subject can be illuminated brightly.

[0093] In addition, in the light source device 1, the content of the wavelength conversion substance contained in the first wavelength conversion member 16 may be larger than the content of the wavelength conversion substance contained in the second wavelength conversion member 26. Thus, even if the light emission of the first stack 11 and the first stack 12 is larger than the light emission of the second stack 21, the color of the light emitted by the first light source unit 10 can be made substantially the same as the color of the light emitted by the second light source unit 20. In addition, the wavelength conversion substance contained in the first wavelength conversion member 16 can be reduced from deteriorating faster than the wavelength conversion substance contained in the second wavelength conversion member 26.

[0094] It should be noted that the amount of wavelength conversion material contained in the first wavelength conversion component 16 and the amount of wavelength conversion material contained in the second wavelength conversion component 26 may be made the same, so that the wavelength of light emitted by the first stack 11 and the first stack 12 is different from the wavelength of light emitted by the second stack 21. In this way, the chromaticity or color temperature of light emitted by the first light source unit 10 and the chromaticity or color temperature of light emitted by the second light source unit 20 can be made substantially consistent.

[0095] <First Modification of First Embodiment>

[0096] The first variant of the first embodiment is described. It should be noted that the same names and symbols as those in the first embodiment represent the same or homogeneous components, and detailed descriptions are appropriately omitted. In addition, the same structural parts as those in the light source device 1 are appropriately omitted from description and illustration, and the differences from the light source device 1 are mainly described. This is also the case in each embodiment and variant shown later.

[0097] Figure 5A It is a top view showing the light source device according to this modification.

[0098] like Figure 5AAs shown, in the light source device 1a of this modification, the size of the first light source unit 10 is different from the size of the second light source unit 20 when viewed from above. Specifically, the area of ​​the first light source unit 10 is smaller than the area of ​​the second light source unit 20 when viewed from above. In addition, the four second light source units 20 arranged at the corners of the light emitting area 50 are larger than the four second light source units 20 arranged along the first direction X or the second direction Y to sandwich the first light source unit 10. For example, the proportion of light from the light source unit arranged at the corner that does not enter the lens 41 and becomes stray light is large, but in the light emitting device 1a of this modification, since the area of ​​the second light source unit 20 arranged at the corner is large, the amount of light entering the lens 41 increases, so compared with the first embodiment, the amount of light emitted can be made approximately equal throughout the light emitting area 50. The structure, operation, and effects other than the above in this modification are the same as those in the first embodiment.

[0099] <Second Modification of First Embodiment>

[0100] Figure 5B It is a top view showing the light source device according to this modification.

[0101] like Figure 5B As shown, in the light source device 1b of this modification, when viewed from above, the area of ​​the first light source unit 10 is larger than the area of ​​the second light source unit 20. Thus, by increasing the area of ​​the semiconductor layer, the capacitance becomes larger, so that more current can be supplied to the first light source unit 10, and the illuminance in the front direction (in other words, the first direction Z) can be increased. The structure, operation and effect other than the above in this modification are the same as those of the first embodiment.

[0102] <Third Modification of First Embodiment>

[0103] Fig. 6A It is a top view showing the light source device according to this modification.

[0104] like Fig. 6A As shown, in the light source device 1c of this modified example, in the light emitting area 50, 17 first light source units 10 and 21 second light source units 20 are arranged along the X direction, and 21 are arranged along the Y direction, forming a light emitting unit 71c. That is, a total of 357 light source units are arranged in a matrix of 21 rows and 17 columns. When viewed from above, the area of ​​each light source unit included in the light source device 1c is, for example, 0.001mm 2 Above and 0.1mm 2 the following.

[0105] Moreover, only one first light source unit 10 is provided in the central area of ​​the light emitting area 50, and the other 356 light source units are second light source units 20. In this way, for example, by increasing the number of light source units without changing the top view area of ​​the light emitting unit, the intensity distribution of the light emitted from the light source device can be precisely controlled according to the viewing angle of the camera and the position of the subject. The structure, operation and effect other than the above in this modification are the same as those of the first embodiment.

[0106] <Fourth Modification of First Embodiment>

[0107] Figure 6B It is a top view showing the light source device according to this modification.

[0108] like Figure 6B As shown, in the light source device 1d of this modified example, the light source units are also arranged in a matrix of 21 rows and 17 columns in the light emitting area 50. In addition, 9 first light source units 10 are arranged in a matrix of 3 rows and 3 columns in the central area of ​​the light emitting area 50, and 348 second light source units 20 are arranged around the first light source units 10 and in the peripheral area of ​​the light emitting area 50.

[0109] In this modification, nine first light source units 10 are arranged as a group. In this case, only one first power supply circuit 61 may be provided for the nine first light source units 10 constituting the group, or one may be provided for each first light source unit 10. Similarly, a group may be formed by a plurality of second light source units 20, 348 second light source units 20 may be divided into a plurality of groups, and a second power supply circuit 62 may be provided for each group of second light source units 20. As a result, even if the number of light source units increases, control becomes easier. In this modification, when nine first light source units 10 are arranged as a group and one first power supply circuit 61 is provided for each first light source unit 10, the number of first light source units 10 that contribute to telephoto shooting can be adjusted, and therefore, the tolerance of the telephoto ratio becomes larger. The structure, operation, and effects other than those described above in this modification are the same as those in the first embodiment.

[0110] <Second Embodiment>

[0111] Figure 7 It is a top view showing the light source device according to this embodiment.

[0112] like Figure 7As shown, in the light source device 2 of the present embodiment, the configuration of the light source unit is not in a matrix shape, and the shape of the light emitting area 50 is elliptical when viewed from above. The first light source unit 10 is configured in the central area of ​​the light emitting area 50, and the second light source unit 20 is configured in the peripheral area of ​​the light emitting area 50. It should be noted that the configuration of the light source unit is not limited to this, and can also be configured in a radial or concentric circle shape, for example. In the light source device 2 of the present embodiment in which the shape of the light emitting area 50 is elliptical when viewed from above, for example, compared with the case where the light emitting area 50 is circular, the aspect ratio of the range illuminated by the light emitted from the lens 41 can be made closer to the aspect ratio of the viewing angle. The structures, actions, and effects other than the above in this embodiment are the same as those in the first embodiment.

[0113] <Third Embodiment>

[0114] Figure 8 It is a cross-sectional view showing the light source device according to this embodiment.

[0115] like Figure 8 As shown, in the light source device 3 of the present embodiment, the structure of the first light source unit 10 a is different from the structure of the first light source unit 10 of the first embodiment.

[0116] In the first light source unit 10a, the emission color of the first stack 11 is different from the emission color of the first stack 12. For example, the first stack 11 emits blue light, and the first stack 12 emits green light. It should be noted that the first light source unit 10a can be manufactured by continuously growing a semiconductor layer including the first stack 11 and a semiconductor layer including the first stack 12, or by bonding the first stack 11 and the first stack 12 prepared separately.

[0117] In addition, in the first light source portion 10a, a tunnel junction layer 14 is provided between the first stack 11 and the first stack 12. The tunnel junction layer 14 is in contact with the p-type semiconductor layer 11p of the first stack 11 and the n-type semiconductor layer 12n of the first stack 12. The tunnel junction layer 14 includes at least one of a p-type semiconductor layer having an acceptor concentration higher than that of the p-type semiconductor layer 11p and an n-type semiconductor layer having a donor concentration higher than that of the n-type semiconductor layer 12n. In one example, the tunnel junction layer 14 includes a layer containing magnesium (Mg) at a high concentration and a layer containing silicon (Si) at a high concentration. Thus, electrons and holes can be efficiently transferred.

[0118] Furthermore, in the first light source unit 10a, a common electrode 15m is provided on the n-type semiconductor layer 12n of the first stacked body 12, and the common electrode 15m is connected to the wiring substrate 80. The common electrode 15m is connected to the first power supply circuit 61a via the wiring substrate 80.

[0119] In the light source device 3, when only the active layer 11a is made to emit light, the common electrode 15m is used as an anode and the n-side electrode 15n is used as a cathode. When only the active layer 12a is made to emit light, the p-side electrode 15p is used as an anode and the common electrode 15m is used as a cathode. When both the active layer 11a and the active layer 12a are made to emit light, the p-side electrode 15p is used as an anode and the n-side electrode 15n is used as a cathode.

[0120] When the p-side electrode 15p is used as an anode and the n-side electrode 15n is used as a cathode, a forward voltage is applied to the active layer 11a of the first stack 11 and the active layer 12a of the first stack 12, and both the active layer 11a and the active layer 12a emit light. At this time, a reverse voltage is applied to the tunnel junction (pn junction) in the tunnel junction layer 14. As a result, in the tunnel junction layer 14, electrons existing in the valence band tunnel through the conduction band, causing a tunnel current to flow.

[0121] In the case where the first wavelength conversion member 16 includes a wavelength conversion material that absorbs blue light and emits yellow light, when only the active layer 11a is made to emit light, the active layer 11a emits blue light, and a portion of the blue light incident on the first wavelength conversion member 16 is converted into yellow light and emitted. Therefore, the first light source unit 10a emits a mixed light of blue light and yellow light. When only the active layer 12a is made to emit light, the active layer 12a emits green light, and a portion of the green light incident on the first wavelength conversion member 16 is converted into yellow light and emitted. Therefore, the first light source unit 10a emits a mixed light of green light and yellow light. When both the active layer 11a and the active layer 12a are made to emit light, the first light source unit 10a emits a mixed light of blue light, green light, and yellow light.

[0122] Furthermore, by controlling the current value supplied to the active layer 11a and the active layer 12a, respectively, and the duty ratio of on / off, the chromaticity of the light obtained by the light emission of the active layer 11a and the light emission of the active layer 12a can be adjusted. Thus, according to this embodiment, the color of the first light source unit 10a can be adjusted. The structure, operation, and effect other than the above in this embodiment are the same as those in the first embodiment.

[0123] Alternatively, three first stacks may be provided in the light source device 3, each of which emits red light, green light, and blue light. By adjusting the light emission amount of each first stack, the degree of freedom of color adjustment can be increased.

[0124] <Fourth Embodiment>

[0125] Fig. 9 It is a cross-sectional view showing the light source device according to this embodiment.

[0126] like Fig. 9As shown, in the light source device 4 of the present embodiment, the structure of the first light source unit 10 b is different from the structure of the first light source unit 10 of the first embodiment.

[0127] In the first light source section 10b, the stacking order of the semiconductors in the first stack 12 is opposite to that in the first embodiment. In addition, the p-type semiconductor layer 12p of the first stack 12 is integrated with the p-type semiconductor layer 11p of the first stack 11 to form a p-type semiconductor layer 10p. Therefore, from the wiring substrate 80 toward the first wavelength conversion component 16 (in other words, along the first direction Z), the n-type semiconductor layer 12n, the active layer 12a, the p-type semiconductor layer 10p, the active layer 11a and the n-type semiconductor layer 11n are stacked in sequence. The p-side electrode 15p is provided at a position in contact with the p-type semiconductor layer 10p. The first light source section 10b has two n-side electrodes, an n-side electrode 15n1 and an n-side electrode 15n2. The n-side electrode 15n1 is provided at a position in contact with the n-type semiconductor layer 11n, and the n-side electrode 15n2 is provided at a position in contact with the n-type semiconductor layer 12n. It should be noted that in Fig. 9 In FIG. 1 , the p-type semiconductor layer 11 p and the p-type semiconductor layer 12 p are collectively shown as a p-type semiconductor layer 10 p .

[0128] According to the present embodiment, the two first stacks in the first light source unit 10 are connected in parallel. That is, the first stack 11 composed of the p-type semiconductor layer 10p, the active layer 11a and the n-type semiconductor layer 11n, and the first stack 12 composed of the p-type semiconductor layer 10p, the active layer 12a and the n-type semiconductor layer 12n can be connected in parallel to the first power supply circuit 61. As a result, the first voltage V1 for driving the active layer 11a or the active layer 12a can be made substantially the same as the second voltage V2 for driving the active layer 21a, and the structure and control of the power supply circuit become easy. In addition, in the case where the first light source unit 10b has an active layer 11a and an active layer 12a that emit light of different wavelengths, these lights can be mixed. The structure, operation and effects other than the above in this embodiment are the same as those in the first embodiment.

[0129] It should be noted that the light source device of the present embodiment may include both a first light source unit in which two or more first stacked bodies are connected in series and a first light source unit in which two or more first stacked bodies are connected in parallel.

[0130] <Variation of the Fourth Embodiment>

[0131] Fig.10 : is a cross-sectional view showing the light source device according to this modification.

[0132] like Fig.10As shown, in the light source device 4a of this modification, the structure of the first light source unit 10c is different from the structure of the first light source unit 10b of the fourth embodiment. In addition, an ASIC substrate 81 is provided instead of the wiring substrate 80.

[0133] In the first light source unit 10c, the stacking order of the semiconductors in the first stack 11 is different from that in the first embodiment. In addition, the n-type semiconductor layer 12n of the first stack 12 is integrated with the n-type semiconductor layer 11n of the first stack 11 to form an n-type semiconductor layer 10n. Furthermore, a tunnel junction layer 14 and an n-type semiconductor layer 10n2 are stacked on the first stack 11.

[0134] That is, the p-type semiconductor layer 12p, active layer 12a, n-type semiconductor layer 10n1, active layer 11a, p-type semiconductor layer 11p, tunnel junction layer 14 and n-type semiconductor layer 10n2 are stacked in sequence from the ASIC substrate 81 toward the first wavelength conversion component 16 (in other words, along the first direction Z).

[0135] The first light source unit 10c includes a first electrode 15n1, a second electrode 15n2, and a third electrode 15p. The first electrode 15n1 is connected to the n-type semiconductor layer 10n1, and the second electrode 15n2 is connected to the n-type semiconductor layer 10n2. The third electrode 15p is connected to the p-type semiconductor layer 12p. The first power supply circuit 61 connected to the first electrode 15n1, the second electrode 15n2, and the third electrode 15p can control the lighting of the active layer 11a and the active layer 12a respectively. The second electrode 15n2 and the third electrode 15p are, for example, anode electrodes. The first electrode 15n1 is, for example, a cathode electrode.

[0136] According to this modification, similarly to the fourth embodiment, in the first light source portion 10c, the first stack 11 and the first stack 12 are connected in parallel. That is, the first stack 11 composed of the p-type semiconductor layer 11p, the active layer 11a and the n-type semiconductor layer 10n, and the first stack 12 composed of the p-type semiconductor layer 11p, the active layer 12a and the n-type semiconductor layer 10n can be connected in parallel to the first power supply circuit 61. In addition, by arranging the first electrode 15n1 functioning as a cathode electrode on the n-type semiconductor layer 10n2, the current can be spread along the XY plane. The structure, operation and effect other than the above in this modification are the same as those in the fourth embodiment.

[0137] <Fifth Embodiment>

[0138] Fig.11 It is a cross-sectional view showing the light source device according to this embodiment.

[0139] like Fig.11As shown, in the light source device 5 of the present embodiment, the structures of the first light source section 10d and the second light source section 20d are different from the structures of the first light source section 10 and the second light source section 20 in the first embodiment.

[0140] In the first light source section 10d, a first stack 11, a first stack 12, and a first stack 13 are provided, which are continuously stacked along the first direction Z. That is, the first light source section 10d has three first stacks. In the first stack 13, a p-type semiconductor layer 13p, an active layer 13a, and an n-type semiconductor layer 13n are stacked along the first direction Z. The p-side electrode 15p is provided at a position in contact with the p-type semiconductor layer 13p. Therefore, in the first light source section 10d, a p-type semiconductor layer 13p, an active layer 13a, an n-type semiconductor layer 13n, a p-type semiconductor layer 12p, an active layer 12a, an n-type semiconductor layer 12n, a p-type semiconductor layer 11p, an active layer 11a, and an n-type semiconductor layer 11n are stacked in sequence from the wiring substrate 80 toward the first wavelength conversion component 16.

[0141] The second light source section 20d is provided with a second stack 21 and a second stack 22, which are continuously stacked along the first direction Z in the same manner as the first stack 11, the first stack 12, and the first stack 13. That is, the second light source section 20d has two second stacks. In the second stack 22, the p-type semiconductor layer 22p, the active layer 22a, and the n-type semiconductor layer 22n are stacked along the first direction Z. The p-side electrode 15p is connected to the p-type semiconductor layer 22p. Therefore, in the second light source section 20d, the p-type semiconductor layer 22p, the active layer 22a, the n-type semiconductor layer 22n, the p-type semiconductor layer 21p, the active layer 21a, and the n-type semiconductor layer 21n are stacked in sequence from the wiring substrate 80 toward the second wavelength conversion component 26 (in other words, along the first direction Z).

[0142] In the light source device 5, when the magnitude of the current supplied to the first light source unit 10d is equal to the magnitude of the current supplied to the second light source unit 20d, and the materials, thicknesses, and areas of the semiconductor layers included in the first light source unit 10d and the second light source unit 20d are the same, the ratio of the light emission of the first light source unit 10d to the light emission of the second light source unit 20d is approximately (3:2). In this case, the first voltage V1 supplied by the first power supply circuit 61 to the first light source unit 10d is (3 / 2) times or more the second voltage V2 supplied by the second power supply circuit 62 to the second light source unit 20d.

[0143] If the relationship between the number of stacking layers and the voltage in each light source unit is expressed more generally, when the magnitude of the current supplied to the first light source unit 10d is equal to the magnitude of the current supplied to the second light source unit 20d, and the materials, thicknesses, and areas of the semiconductor layers included in the first light source unit 10d and the second light source unit 20d are the same, the ratio (V1 / V2) of the first voltage V1 to the second voltage V2 is greater than the ratio (N1 / N2) of the number of stacking layers N1 of the first stack in the first light source unit to the number of stacking layers N2 of the second stack in the second light source unit. That is, (V1 / V2) ≥ (N1 / N2). In this embodiment, N1 is 3 and N2 is 2, so (V1 / V2) ≥ (3 / 2). In the first embodiment, N1 is 2 and N2 is 1, so (V1 / V2) ≥ (2 / 1) = 2. The structures, actions, and effects other than the above in this embodiment are the same as those in the first embodiment.

[0144] <Sixth Embodiment>

[0145] Fig.12 It is a top view showing the light source device according to this embodiment.

[0146] like Fig.12 As shown, in the light source device 6 of the present embodiment, the arrangement of the first light source unit 10 and the second light source unit 20 is different from that of the first embodiment.

[0147] In the light source device 6, the light source units are arranged in a matrix of 3 rows and 3 columns to form a light emitting area 50. Moreover, in a plan view, one first light source unit 10 is arranged at each of the four corners of the light emitting area 50. That is, there are four first light source units 10. The second light source units 20 are arranged at positions other than the four corners of the light emitting area 50. That is, there are five second light source units 20.

[0148] Next, the operation of this embodiment will be described.

[0149] Fig.13 It is a cross-sectional view for explaining the effect of this embodiment.

[0150] like Fig.13 As shown, most of the light Lc emitted by the light source portion arranged in the central area of ​​the light-emitting area 50 is incident on the lens 41 of the lens component 40. On the other hand, a part of the light Le emitted from the light source portion arranged at the corner of the light-emitting area 50 is incident on the support portion 42 of the lens component 40. The light incident on the support portion 42 becomes stray light, and most of it has difficulty reaching the subject. Therefore, if it is assumed that the light emission of all the light source portions is made roughly equal, the amount of light incident on the lens 41 from the light source portion arranged at the corner of the light-emitting area 50 becomes less, and there is a possibility that the four corners of the range in which the light source device 1 can irradiate light (hereinafter sometimes referred to as the "shooting area") become dark.

[0151] In the light source device 6, the first light source unit 10 is arranged at the four corners of the light emitting area 50. The light emission of the first light source unit 10 is greater than that of the second light source unit 20, so the amount of light incident on the lens 41 can be increased, and the unevenness of light can be reduced to illuminate the entire shooting area. The structure, operation and effect other than the above in this embodiment are the same as those in the first embodiment.

[0152] <First Modification of Sixth Embodiment>

[0153] Fig.14A It is a top view showing the light source device according to this modification.

[0154] like Fig.14A As shown, in the light source device 6a of this modified example, the first light source units 10 are arranged at the four corners of the light emitting area 50, and when viewed from above, the area of ​​the first light source unit 10 is larger than the area of ​​the second light source unit 20. As a result, more light emitted from the four first light source units 10 arranged at the corners of the light emitting area 50 can be incident on the lens 41. The structure, operation and effects other than the above in this modified example are the same as those of the sixth embodiment.

[0155] <Second Modification of Sixth Embodiment>

[0156] Fig. 14B It is a top view showing the light source device according to this modification.

[0157] like Fig. 14B As shown, in the light source device 6b of this modification, the first light source units 10 are arranged at the four corners of the light emitting area 50, and the area of ​​the second light source unit 20 is larger than the area of ​​the first light source unit 10 when viewed from above. The light source device 6b is provided with four first light source units 10 at the corners of the light emitting area 50, so that the light emitted from the four first light source units 10 can be efficiently incident on the lens 41. Furthermore, the second light source unit 20 having an area larger than that of the first light source unit 10 is arranged in the central area of ​​the light emitting area 50, so that sufficient light can be obtained to illuminate the vicinity of the center of the shooting area. The structures, actions and effects other than those described above in this modification are the same as those of the sixth embodiment.

[0158] <Third Modification of Sixth Embodiment>

[0159] Fig.15A It is a top view showing the light source device according to this modification.

[0160] like Fig.15A As shown, in the light source device 6 c of the present modification, a total of 357 light source units are arranged in a matrix of 21 rows and 17 columns in the light emitting region 50 .

[0161] The first light source unit 10 is provided at each of the four corners of the light emitting area 50, and 353 second light source units 20 are arranged at positions other than the four corners. In this way, for example, when the area of ​​the light emitting area 50 is made substantially the same as the area of ​​the light emitting area 50 of the light source device 6b in a plan view, by increasing the number of light source units as in the light source device 6c, the intensity distribution of the light emitted from the light source device 6c can be precisely controlled in accordance with the viewing angle of the camera and the distance between the light source device 6c and the subject. The structure, operation, and effects other than those described above in this modification are the same as those of the sixth embodiment.

[0162] <Fourth Modification of Sixth Embodiment>

[0163] Fig. 15B It is a top view showing the light source device according to this modification.

[0164] like Fig. 15B As shown, in the light source device 6d of this modified example, the light source units are arranged in a matrix of 21 rows and 17 columns in the light emitting area 50. Moreover, 9 first light source units 10 are arranged in a matrix of 3 rows and 3 columns at the four corners of the light emitting area 50. That is, a total of 36 first light source units 10 are provided. 321 second light source units 20 are arranged at other positions.

[0165] In this variation, the nine first light source units 10 arranged at the corners of the light emitting area 50 form a group. The first power supply circuit 61 may be provided with only one of the nine first light source units 10 constituting the group. In this case, four first power supply circuits 61 are provided in the light source device 6d. Similarly, a group may be formed of a plurality of second light source units 20 and a group of a plurality of second light source units 20 may be provided, and a second power supply circuit 62 may be provided for each group of the second light source units 20. As a result, even if the number of light source units increases, control becomes easier. The structures, actions, and effects other than those described above in this variation are the same as those in the sixth embodiment.

[0166] <Seventh Embodiment>

[0167] Fig.16 It is a top view showing the light source device according to this embodiment.

[0168] like Fig.16 As shown in FIG. 1 , in the light source device 7 of the present embodiment, light source units are arranged in a matrix of 17 rows and 21 columns in the light emitting area 50. Furthermore, in the light emitting area 50, there is one or more first light source units 10, second light source units 20, and third light source units 30, respectively. It should be noted that in order to facilitate viewing of the drawings, Fig.16 In the figure, the first light source unit 10 is marked with dark hatching, the second light source unit 20 is marked with light hatching, and the third light source unit 30 is not marked with hatching.

[0169] The first light source unit 10 and Fig.11 The first light source unit 10d shown in the figure also has three first stacked bodies (i.e., first stacked body 11, first stacked body 12, and first stacked body 13) stacked along the first direction Z. These three first stacked bodies are connected in series. Fig.11 Similarly to the second light source unit 20d shown in FIG. 1 , two second stacks (i.e., the second stack 21 and the second stack 22) are stacked along the first direction Z and connected in series. The third light source unit 30 includes a third stack. The third stack is connected to the first direction Z. Figure 2 The second light source unit 20 shown is similarly a semiconductor stack of a p-type semiconductor layer, an active layer, and an n-type semiconductor layer stacked along the first direction. Therefore, when the magnitude of the current supplied to each light source unit is equal and the material, thickness, and area of ​​the semiconductor layer included in each light source unit are the same, the ratio of the light emission of the first light source unit 10, the second light source unit 20, and the third light source unit 30 is approximately (3:2:1).

[0170] Nine first light source units 10 are arranged in three rows and three columns in the central area of ​​the light emitting region 50, and one is arranged at each of the four corners of the light emitting region 50. The second light source units 20 are arranged in two columns on both sides of the central area along the third direction Y, three columns on both sides of the central area along the second direction X, and 54 are arranged in such a manner as to surround the nine first light source units 10 arranged in the central area of ​​the light emitting region 50, and one column is arranged along each of the four sides of the light emitting region 50 except the four corners, and 68 are arranged. The third light source unit 30 is arranged in a frame-shaped position in the light emitting region 50 where the first light source unit 10 and the second light source unit 20 are not arranged. Therefore, 13 first light source units 10, 122 second light source units 20, and 222 third light source units 30 are arranged in the light emitting region 50.

[0171] The effect of this embodiment is the effect of combining the effect of the first embodiment with the effect of the sixth embodiment. That is, during wide-angle shooting, light is irradiated with less unevenness in a large shooting area, and during telephoto shooting, a sufficient amount of light can be irradiated to a distant subject. In detail, not only is the first light source unit 10 with a large amount of light emitted arranged at the corner of the light-emitting area 50, but also the second light source unit 20 with a light emission second only to the first light source unit 10 is arranged at the four sides of the light-emitting area 50, so that sufficient light can be irradiated not only to the four corners of the shooting area, but also to the periphery. Moreover, by surrounding the plurality of second light source units 20 arranged in the group of the first light source unit 10 in the central area of ​​the light-emitting area 50, it is possible to appropriately compensate for the irradiated light during telephoto shooting. The structures, actions, and effects other than those described above in this embodiment are the same as those in the first embodiment.

[0172] <Eighth Implementation Method>

[0173] Fig.17 It is a cross-sectional view showing the light source device according to this embodiment.

[0174] like Fig.17 As shown, in the light source device 8 of the present embodiment, in the first direction Z, the first wavelength conversion member 16 is thicker than the second wavelength conversion member 26 .

[0175] The first light source unit 10 has a substrate 10g. In the present embodiment, the substrate 10g is a substrate for growing semiconductor layers from the n-type semiconductor layer 11n to the p-type semiconductor layer 12p, for example, a sapphire substrate. The substrate 10g is in contact with the n-type semiconductor layer 11n. The second light source unit 20 has a substrate 20g. In the present embodiment, the substrate 20g is a substrate for growing semiconductor layers from the n-type semiconductor layer 21n to the p-type semiconductor layer 22p, for example, a sapphire substrate. After growing the semiconductor layers, the substrates 10g and 20g are thinned to an arbitrary thickness. In the present embodiment, the substrate 10g is thinner than the substrate 20g. It should be noted that the substrates 10g and 20g are not limited to growth substrates, but may also be supporting substrates that support semiconductor layers.

[0176] The type and concentration of the wavelength converting material in the first wavelength converting member 16 may be the same as the type and concentration of the wavelength converting material in the second wavelength converting member 26. In this case, the amount of the wavelength converting material contained in the first wavelength converting member 16 is greater than the amount of the wavelength converting material contained in the second wavelength converting member 26.

[0177] In the first direction Z, the upper surface of the first wavelength conversion component 16 is located at substantially the same position as the upper surface of the second wavelength conversion component 26. The thickness of the first light-transmitting component 17 is substantially equal to the thickness of the second light-transmitting component 27. Therefore, in the first direction Z, the upper surface of the first light-transmitting component 17 is located at substantially the same position as the upper surface of the second light-transmitting component 27.

[0178] The substrate 10g is bonded to the first wavelength conversion component 16 via the first bonding component 18. The second light source unit 20 is bonded to the second wavelength conversion component 26 via the second bonding component 28. The first bonding component 18 and the second bonding component 28 are, for example, adhesives made of a light-transmitting resin. It should be noted that the first bonding component 18 and the second bonding component 28 may not be provided.

[0179] According to this modification, by making the first wavelength conversion member 16 thicker than the second wavelength conversion member 26, an appropriate amount of wavelength conversion members can be arranged on the first light source unit 10 and the second light source unit 20. This improves the uniformity of emitted light.

[0180] In addition, the upper surface of the first light-transmitting member 17 is located at substantially the same position as the upper surface of the second light-transmitting member 27 in the first direction Z, so the light-emitting surface of the light source device 8 is flat. As a result, the workability in the mounting process of the light source device 8 is improved.

[0181] Furthermore, in this embodiment, the substrate 10g is thinner than the substrate 20g. Thus, in the first light source unit 10 requiring stronger light, the scattering and absorption of light caused by the substrate 10g can be reduced. The structure, operation and effects other than the above in this embodiment are the same as those in the first embodiment.

[0182] <First Modification of Eighth Embodiment>

[0183] Fig.18 : is a cross-sectional view showing the light source device according to this modification.

[0184] A light source device 8 a according to the present modification example is different from the light source device 8 according to the eighth embodiment in the structure of the first wavelength conversion member.

[0185] like Fig.18 As shown, a first wavelength conversion component 16a is provided in the light source device 8a. The first wavelength conversion component 16a has a wavelength conversion layer 16b and a wavelength conversion layer 16c. The wavelength conversion layer 16c is arranged between the substrate 10g and the wavelength conversion layer 16b. The structure of the wavelength conversion layer 16b, that is, the thickness, and the type and concentration of the wavelength conversion material can be the same as the structure of the second wavelength conversion component 26. At this time, the concentration of the wavelength conversion material in the wavelength conversion layer 16c is higher than the concentration of the wavelength conversion material in the wavelength conversion layer 16b. Therefore, the amount of wavelength conversion material contained in the first wavelength conversion component 16a is greater than the amount of wavelength conversion material contained in the second wavelength conversion component 26.

[0186] In this variation, by providing the wavelength conversion layer 16c having a high concentration of wavelength conversion material on the first wavelength conversion member 16a, the difference in emission color between the light source units caused by the difference in emission amount of each light source unit can be adjusted.

[0187] The concentration of the wavelength conversion material of the wavelength conversion layer 16c is higher than that of the wavelength conversion material of the wavelength conversion layer 16b. Therefore, when light is incident from the first light source unit 10 into the first wavelength conversion component 16a, the heat generated by the wavelength conversion layer 16c is greater than that of the wavelength conversion layer 16b. However, the wavelength conversion layer 16c is arranged closer to the substrate 10g, the semiconductor layer and the wiring substrate 80 than the wavelength conversion layer 16b, so the heat dissipation through the substrate 10g, the semiconductor layer and the wiring substrate 80 is high. As a result, the concentration of heat in the light source device 8a can be alleviated. The structure, operation and effect other than the above in this modification are the same as those of the eighth embodiment.

[0188] <Second Modification of Eighth Embodiment>

[0189] Fig.19 : is a cross-sectional view showing the light source device according to this modification.

[0190] like Fig.19 As shown, the light source device 8b of this variant is different from the light source device 8 of the eighth embodiment in that the thickness of the substrate 10g is approximately equal to the thickness of the substrate 20g; and the first wavelength conversion component 16 protrudes in the first direction Z relative to the second wavelength conversion component 26.

[0191] According to this modification, the light L2 emitted from the second light source unit 20 at a low angle can be reflected by the side of the light shielding member 70 arranged around the first wavelength conversion member 16 and enter the lens 41. As a result, the light utilization efficiency can be improved. It should be noted that, assuming that the first wavelength conversion member 16 does not protrude, Fig.19 The light L2 shown is light that becomes stray light. The structure, operation, and effects other than those described above in this modification are the same as those of the eighth embodiment.

[0192] <Ninth Embodiment>

[0193] Fig. 20A It is a cross-sectional view showing the light source device according to this embodiment.

[0194] like Fig. 20A As shown, the light source device 9 of the present embodiment is different from that of the first embodiment in the structure of the lens member 40 and its peripheral portion.

[0195] like Fig. 20A As shown, a support member 45 is provided in the light source device 9. The support member 45 fixes the lens member 40 to the wiring substrate 80. The support member 45 is in the shape of a frame or a ring extending along the first direction Z. When viewed from above, the support member 45 surrounds the light emitting area 50. The lower surface of the support member 45 is bonded to the upper surface of the wiring substrate 80. The support portion 42 of the lens member 40 is bonded to the inner side surface of the support member 45.

[0196] The support member 45 is formed of a light-shielding material. The light-shielding material is, for example, a white or black resin material. In the resin material, a filler is contained in the resin that becomes the base material. The resin that becomes the base material includes, for example, polycarbonate resin, acrylic resin, silicone resin, or epoxy resin. When the resin material is made white, a light-scattering substance such as titanium oxide, silicon dioxide, or aluminum oxide is used as the filler. When the resin material is made black, a light-absorbing substance such as carbon or paint is used as the filler.

[0197] According to the present embodiment, stray light can be reduced by providing the light-shielding support member 45. The configuration, operation, and effects of the present embodiment other than those described above are the same as those of the first embodiment.

[0198] <First Modification of Ninth Embodiment>

[0199] Fig. 20B : is a cross-sectional view showing the light source device according to this modification.

[0200] like Fig. 20B As shown, the light source device 9a of this modification is different from that of the first embodiment in the shape of the lens member.

[0201] like Fig. 20B As shown, in the light source device 9a, a Fresnel lens is provided as the lens component 44. Thus, the light source device 9a can be made thinner. That is, the length of the light source device 9a in the first direction Z can be shortened. The structure, operation and effects other than those described above in this modification are the same as those in the first embodiment.

[0202] <Second Modification of Ninth Embodiment>

[0203] Fig. 20C : is a cross-sectional view showing the light source device according to this modification.

[0204] like Fig. 20C As shown, this modification is an example of combining the ninth embodiment and its first modification. That is, in the light source device 9b of this modification, a support component 45 and a lens component 44 in the shape of a Fresnel lens are provided, and the support component 45 fixes the lens component 44 to the wiring substrate 80. The structure, operation and effect other than the above in this modification are the same as those of the ninth embodiment and the first modification of the ninth embodiment.

[0205] <Third Modification of Ninth Embodiment>

[0206] Fig.20D : is a cross-sectional view showing the light source device according to this modification.

[0207] like Fig.20D As shown, in the light source device 9c of this modification, three lenses 46a, 46b, and 46c are held on the supporting member 45. The three lenses 46a, 46b, and 46c can also be bonded to each other by an adhesive member 47 such as a resin or a double-sided tape. The lenses 46a, 46b, and 46c are, for example, aspherical lenses. Thus, the irradiation of light from the light source device 9c can be controlled with higher precision. In addition, the lenses are not limited to three, and can also be more than two. The structure, action, and effect other than the above in this modification are the same as those of the ninth embodiment.

[0208] <Tenth Implementation Method>

[0209] Fig.21 It is a cross-sectional view showing the light source device according to this embodiment.

[0210] like Fig.21 As shown, a light source device 9e of the present embodiment is different from the first embodiment in that a lens member 40 and a wiring substrate 80 are arranged to be separated from each other.

[0211] like Fig.21 As shown, the light source device 9e is arranged in a frame 91 of a mobile terminal 90 such as a smart phone. Moreover, the lens component 40 is provided in the frame 91 of the mobile terminal 90. That is, the light source device 9e does not include the lens component 40. Specifically, the support portion 42 of the lens component 40 is bonded to the inner surface of the frame 91 of the mobile terminal 90 by an adhesive component 47 such as a resin or a double-sided tape. In addition, the frame 91 has an opening, and a cover component 92 is arranged at the opening of the frame 91 in a manner opposite to the lens 41 of the lens component 40. The cover component 92 is, for example, a light-transmitting component made of a glass or resin material.

[0212] Thus, the light emitted from the light source device 9e is focused by the lens 41 of the lens component 40 provided in the frame 91, and is emitted to the outside of the mobile terminal 90 through the cover component 92. According to this embodiment, by using the lens component 40 provided in the frame 91, the light source device 9e can be made thinner and less expensive. The structure, operation, and effects other than the above in this embodiment are the same as those in the first embodiment.

[0213] <Eleventh Embodiment>

[0214] This embodiment is an example of a method for manufacturing a light source device.

[0215] Figures 22A to 22E It is a cross-sectional view showing a method of manufacturing the light source device according to the present embodiment.

[0216] In this embodiment, an example of manufacturing the light source device 1 of the first embodiment is described, but the manufacturing methods of the light source devices of other embodiments are also the same. In addition, in this embodiment, a manufacturing method of the light source device 1 having a first light source unit 10 having a first wavelength conversion component 16 and a second light source unit 20 having a second wavelength conversion component 26 is described as an example, and sometimes the components included in the first light source unit 10 are referred to as first units 19, and the components included in the second light source unit 20 are referred to as second units 29. It should be noted that the light-transmitting components are omitted from the illustration.

[0217] First, a first wavelength conversion sheet and a second wavelength conversion sheet each containing a wavelength conversion substance in a resin material are prepared, wherein the amount of the wavelength conversion substance contained in the first wavelength conversion sheet is larger than the amount of the wavelength conversion substance contained in the second wavelength conversion sheet.

[0218] Then, if Fig.22A As shown, a second wavelength conversion sheet is arranged on the mounting substrate 201. In this state, the second wavelength conversion sheet is cut by, for example, a dicing blade or a laser to produce a plurality of second wavelength conversion components 26. In the case where the second light-transmitting component 27 is provided, the second light-transmitting component 27 is bonded to the second wavelength conversion component 26 at this stage. Next, a plurality of second wavelength conversion components 26 are arranged in a matrix on the mounting substrate 201. It should be noted that, in the case where the second light-transmitting component 27 is provided, the second light-transmitting sheet may be bonded to the second wavelength conversion sheet, and the two may be cut to produce a plurality of second wavelength conversion components 26 and a plurality of second light-transmitting components 27 at the same time.

[0219] Then, if Fig. 22B As shown, a portion of the second wavelength conversion component 26 is replaced by the first wavelength conversion component 16 in a manner configured at a desired position within the light emitting region 50. That is, a portion of the second wavelength conversion component 26 replaced by the first wavelength conversion component 16 is selected from the mounting substrate 201 and removed, and the first wavelength conversion component 16 is configured at the removed position.

[0220] Then, if Fig. 22C As shown, a first unit 19 including a first stack 11 and a first stack 12, a p-side electrode 15p, and an n-side electrode 15n is arranged on the first wavelength conversion component 16. In addition, a second unit 29 including a second stack 21, a p-side electrode 25p, and an n-side electrode 25n is arranged on the second wavelength conversion component 26. That is, two types of units are arranged according to the type of wavelength conversion component. It should be noted that the first unit 19 and the second unit 29 can also be bonded to the first wavelength conversion component 16 and the second wavelength conversion component 26 using adhesive components such as resin, respectively.

[0221] Then, if Fig.22D As shown, a light shielding member 70 may be arranged on the mounting substrate 201. The light shielding member 70 integrally covers the structure composed of the first wavelength conversion member 16 and the first unit 19, and the structure composed of the second wavelength conversion member 26 and the second unit 29. Next, the upper surface of the light shielding member 70 is ground to expose the p-side electrode 15p, the n-side electrode 15n, the p-side electrode 25p, and the n-side electrode 25n from the light shielding member 70.

[0222] Then, if Fig.22EAs shown, the light shielding member 70 is cut to form a light emitting unit 71 including one or more first light source units 10 and one or more second light source units 20. The singulated light emitting unit 71 is used for one light source device 1 and includes a plurality of light source units. In this way, the light source device 1 is manufactured.

[0223] The manufactured light emitting portion 71 (in other words, the light source device 1) can also be installed in a manner that the p-side electrode 15p, the n-side electrode 15n, the p-side electrode 25p and the n-side electrode 25n of the first light source portion 10 and the second light source portion 20 included in the light emitting portion 71 are connected to the prescribed wiring of the wiring substrate 80. Next, the lens component 40 is mounted on the wiring substrate 80 in a manner that the lens 41 and the light emitting portion 71 are opposed to each other. Thus, an air layer 72 is formed between the light emitting portion 71 and the lens component 40. In addition, the first power supply circuit 61 and the second power supply circuit 62 are connected to the wiring substrate 80. In this way, a light emitting device having Figure 1 to Figure 3 The light source device 1 includes the wiring substrate 80 , the light shielding member 70 , the lens member 40 , the first power supply circuit 61 , and the second power supply circuit 62 as shown.

[0224] It should be noted that in the adjustment of the content of the wavelength conversion material contained in each of the first wavelength conversion member 16 and the second wavelength conversion member 26, in the above-mentioned process, Fig. 22B Although a portion of the second wavelength conversion component 26 shown is replaced by the first wavelength conversion component 16, the amount of the wavelength conversion material may be different by other methods. For example, instead of the above-mentioned process, the second wavelength conversion component 26 may be arranged in both the first unit 19 and the second unit 29, and the second wavelength conversion component 26 arranged in the first unit 19 may be coated with a resin containing a wavelength conversion material, thereby increasing the amount of the wavelength conversion material. Thus, it is roughly equivalent to the case where the first wavelength conversion component 16 containing a wavelength conversion material more than the wavelength conversion material contained in the second wavelength conversion component 26 is arranged in the first unit 19.

[0225] The above-mentioned embodiments and their variations are examples of specific implementations of the technology disclosed herein, and the technology disclosed herein is not limited to these embodiments and variations. For example, in the above-mentioned embodiments and variations, technologies that add, delete or change several components or processes are also included in the technology disclosed herein. In addition, the above-mentioned embodiments and variations can be implemented in combination with each other.

[0226] The light source device of the present disclosure can be applied to camera flashes, lighting, vehicle headlights, etc. However, the light source device of the present disclosure is not limited to these applications.

[0227] The present disclosure includes the following aspects.

[0228] (Note 1)

[0229] A light source device comprises: one or more first light source units; one or more second light source units; a shading component, which is arranged between the first light source unit and the second light source unit; the first light source unit has two or more first stacks, which are stacked with p-type semiconductor layers, active layers and n-type semiconductor layers along a first direction, and the second light source unit has one or more second stacks, which are stacked with p-type semiconductor layers, active layers and n-type semiconductor layers along the first direction, in the first light source unit, the two or more first stacks are continuously stacked along the first direction, and the number of the first stacks included in the first light source unit is greater than the number of the second stacks included in the second light source unit.

[0230] (Note 2)

[0231] The light source device according to Supplementary Note 1, wherein the first light source section includes two first stacked bodies, and the second light source section includes one second stacked body.

[0232] (Note 3)

[0233] The light source device according to Supplementary Note 1, wherein the first light source section has three first stacked bodies, the second light source section has two second stacked bodies, and in the second light source section, the two second stacked bodies are continuously stacked along the first direction.

[0234] (Note 4)

[0235] The light source device according to any one of Supplementary Notes 1 to 3, wherein two or more second light source units are provided, and the two or more second light source units are arranged across the first light source unit in a plan view.

[0236] (Note 5)

[0237] The light source device according to any one of appendices 1 to 4, wherein the one or more first light source sections and the one or more second light source sections are arranged in a matrix in a plan view and constitute a light emitting area.

[0238] (Note 6)

[0239] The light source device according to Supplement 5, wherein, in a plan view, at least one of the first light source units is arranged in a central area of ​​the light emitting area.

[0240] (Note 7)

[0241] The light source device according to Supplement 5 or 6, wherein at least one of the first light source units is disposed at each of four corners of the light emitting area when viewed from above.

[0242] (Note 8)

[0243] The light source device according to any one of Supplementary Notes 1 to 7, wherein the first light source section and the second light source section have different sizes in a plan view.

[0244] (Note 9)

[0245] A light source device according to any one of Notes 1 to 8, wherein the first light source unit also has a first wavelength conversion component arranged on the first stack, and the second light source unit also has a second wavelength conversion component arranged on the second stack, and the content of wavelength conversion substance contained in the first wavelength conversion component is greater than the content of wavelength conversion substance contained in the second wavelength conversion component.

[0246] (Note 10)

[0247] A light source device according to any one of Notes 1 to 9, comprising: a first power supply circuit that supplies a first voltage to the first light source unit; and a second power supply circuit that supplies a second voltage to the second light source unit, wherein a ratio of the first voltage to the second voltage is greater than a ratio of the number of stacking layers of the first stack in the first light source unit to the number of stacking layers of the second stack in the second light source unit.

[0248] (Note 11)

[0249] The light source device according to any one of Supplementary Notes 1 to 10, wherein the two or more first stacked bodies in the first light source section are connected in series.

[0250] (Note 12)

[0251] The light source device according to any one of Supplementary Notes 1 to 10, wherein the two or more first stacked bodies in the first light source section are connected in parallel.

[0252] (Note 13)

[0253] The light source device according to any one of Supplementary Notes 1 to 12, wherein the light source device is used for a flash.

[0254] (Note 14)

[0255] The light source device according to any one of Supplementary Notes 1 to 13, further comprising a lens into which the light emitted by the first light source unit and the light emitted by the second light source unit are incident.

[0256] (Note 15)

[0257] A light source device comprises: one or more first light source units; one or more second light source units; a shading component, which is arranged between the first light source unit and the second light source unit; the first light source unit has two or more first stacks, the first stacks are stacked with a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, the second light source unit has one or more second stacks, the second stacks are stacked with a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, in the first light source unit, the two or more first stacks are stacked continuously along the stacking direction of the first stacks, and the number of the first stacks included in the first light source unit is greater than the number of the second stacks included in the second light source unit.

[0258] Description of Reference Numerals

[0259] 1, 1a, 1b, 1c, 1d, 2, 3, 4, 4a, 5, 6, 6a, 6b, 6c, 6d, 7, 8, 8a, 8b, 9, 9a, 9b, 9c, 9e: Light source device

[0260] 10, 10a, 10b, 10c, 10d: first light source unit

[0261] 10g: substrate

[0262] 10n: n-type semiconductor layer

[0263] 10p: p-type semiconductor layer

[0264] 11: First laminate

[0265] 11a: Active layer

[0266] 11n: n-type semiconductor layer

[0267] 11p: p-type semiconductor layer

[0268] 12: First stack

[0269] 12a: Active layer

[0270] 12n: n-type semiconductor layer

[0271] 12p: p-type semiconductor layer

[0272] 13: First stack

[0273] 13a: Active layer

[0274] 13n: n-type semiconductor layer

[0275] 13p: p-type semiconductor layer

[0276] 14: Tunnel junction layer

[0277] 15m: common electrode

[0278] 15n, 15n1, 15n2: n-side electrode

[0279] 15p, 15p1, 15p2: p-side electrode

[0280] 16, 16a: first wavelength conversion component

[0281] 16b, 16c, 16d: wavelength conversion layer

[0282] 17: First light-transmitting component

[0283] 18, 18a: First joining member

[0284] 19: Unit 1

[0285] 20, 20d: Second light source

[0286] 20g: substrate

[0287] 21: Second laminate

[0288] 21a: Active layer

[0289] 21n: n-type semiconductor layer

[0290] 21p: p-type semiconductor layer

[0291] 22: Second laminate

[0292] 22a: Active layer

[0293] 22n: n-type semiconductor layer

[0294] 22p: p-type semiconductor layer

[0295] 25n: n-side electrode

[0296] 25p: p-side electrode

[0297] 26: Second wavelength conversion component

[0298] 27: Second light-transmitting component

[0299] 28: Second joint member

[0300] 29: Unit 2

[0301] 30: The third light source

[0302] 40: Lens components

[0303] 41: Lens

[0304] 41c: Central axis

[0305] 42: Supporting part

[0306] 44: Lens components

[0307] 45: Supporting parts

[0308] 46a, 46b, 46c: Lens

[0309] 47: Bonding parts

[0310] 50: Luminous area

[0311] 61, 61a: First power supply circuit

[0312] 62: Second power supply circuit

[0313] 70: Light shielding parts

[0314] 71, 71c: Light-emitting part

[0315] 72: Air layer

[0316] 80: Wiring board

[0317] 81:ASIC substrate

[0318] 90: Mobile terminals

[0319] 91: Frame

[0320] 92: Cover parts

[0321] 101, 102: Subject

[0322] 201: Install the base plate

[0323] L1, L2, Lc, Le: light

[0324] I1: First current

[0325] I2: Second current

[0326] V1: first voltage

[0327] V2: Second voltage

Claims

1. A light source device, characterized in that: have: one or more first light source units; one or more second light source units; a light shielding member disposed between the first light source portion and the second light source portion; The first light source unit includes two or more first stacked bodies, wherein a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along a first direction. The second light source unit includes one or more second stacked bodies, wherein a p-type semiconductor layer, an active layer, and an n-type semiconductor layer are stacked along the first direction. In the first light source unit, the two or more first stacked bodies are continuously stacked along the first direction. The number of the first stacked bodies included in the first light source section is greater than the number of the second stacked bodies included in the second light source section.

2. The light source device according to claim 1, characterized in that: The first light source unit includes two first stacked bodies. The second light source unit includes one second stacked body.

3. The light source device according to claim 1, characterized in that: The first light source unit has three first stacked bodies. The second light source unit includes two second stacked bodies. In the second light source section, the two second stacked bodies are continuously stacked along the first direction.

4. The light source device according to any one of claims 1 to 3, characterized in that: The second light source unit is provided with two or more, In a plan view, two or more of the second light source units are arranged to sandwich the first light source unit.

5. The light source device according to any one of claims 1 to 4, characterized in that: In a plan view, the one or more first light source units and the one or more second light source units are arranged in a matrix and constitute a light emitting area.

6. The light source device according to claim 5, characterized in that: In a plan view, at least one of the first light source units is disposed in a central area of ​​the light emitting area.

7. The light source device according to claim 5 or 6, characterized in that: In a plan view, at least one first light source unit is disposed at each of the four corners of the light emitting area.

8. The light source device according to any one of claims 1 to 7, characterized in that: In a plan view, the size of the first light source portion is different from the size of the second light source portion.

9. The light source device according to any one of claims 1 to 8, characterized in that: The first light source unit further includes a first wavelength conversion component disposed on the first stacked body. The second light source unit further includes a second wavelength conversion component disposed on the second stacked body. The content of the wavelength conversion substance included in the first wavelength conversion member is larger than the content of the wavelength conversion substance included in the second wavelength conversion member.

10. The light source device according to any one of claims 1 to 9, characterized in that: have: a first power supply circuit that supplies a first voltage to the first light source unit; a second power supply circuit for supplying a second voltage to the second light source unit; A ratio of the first voltage to the second voltage is equal to or greater than a ratio of the number of stacked layers of the first stacked bodies in the first light source section to the number of stacked layers of the second stacked bodies in the second light source section.

11. The light source device according to any one of claims 1 to 10, characterized in that: The two or more first stacked bodies in the first light source unit are connected in series.

12. The light source device according to any one of claims 1 to 10, characterized in that: The two or more first stacked bodies in the first light source unit are connected in parallel.

13. The light source device according to any one of claims 1 to 12, characterized in that: The light source device is used for a flashlight.

14. The light source device according to any one of claims 1 to 13, characterized in that: A lens is further provided, into which the light emitted by the first light source unit and the light emitted by the second light source unit are incident.

15. A light source device, characterized in that: have: one or more first light source units; one or more second light source units; a light shielding member disposed between the first light source portion and the second light source portion; The first light source unit includes two or more first stacked bodies, wherein the first stacked bodies are stacked with a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The second light source unit includes at least one second stacked body, wherein the second stacked body includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. In the first light source unit, the two or more first stacked bodies are continuously stacked along a stacking direction of the first stacked bodies. The number of the first stacked bodies included in the first light source section is greater than the number of the second stacked bodies included in the second light source section.

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