Contact type measurer and wafer thinning equipment

Abstract

The invention provides a contact type measurer and wafer thinning equipment. The contact-type measurer includes: a first mounting seat configured with a mounting hole; the first measuring rod is mounted in the mounting hole and horizontally extends to the position above the bearing table, a first measuring head is arranged at the tail end of the first measuring rod, and the first measuring rod can ascend and descend in the mounting hole so that the first measuring head can make contact with the wafer and ascend and descend along with the change of the thickness of the wafer; the protective air pipe is provided with a vent groove which extends along the length of the protective air pipe and is provided with a downward opening, the protective liquid pipe is provided with a liquid groove which extends along the length of the protective liquid pipe and is provided with a downward opening, and the vent groove discharges air downwards to form an air curtain so as to prevent machining chippings from entering the mounting hole; the liquid flowing groove discharges liquid downwards to form a liquid curtain so as to prevent machining chippings penetrating through the air curtain from entering the mounting hole. According to the technical scheme, accumulation of chippings at the mounting hole can be effectively reduced, interference to movement of the measuring rod is avoided, and therefore the measuring accuracy is improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor wafer processing, and in particular to a contact measuring device and wafer thinning equipment. Background Art

[0002] In the back-end process stage of integrated circuit manufacturing, in order to reduce the package mounting height, reduce the chip package volume, improve the chip's thermal diffusion efficiency, electrical performance, mechanical properties and reduce the amount of dicing processing, the wafer needs to be thinned on the back side before subsequent packaging.

[0003] During the above-mentioned backside thinning process, a wafer thickness online detection device is usually used to measure the wafer thickness, so as to correct the spindle feed rate during the thinning process. The thickness online detection device generally uses a contact measurement module. During the grinding and thinning process, a large amount of silicon powder and crystal slag will be generated. Under the high-speed rotation of the spindle, some silicon powder will be blown into the mounting hole at the root of the measuring rod. After a period of accumulation, the measuring rod will not be able to descend normally, thereby affecting the normal operation of the equipment. Summary of the invention

[0004] The present application provides a contact measurement device and a wafer thinning device to solve or alleviate at least some of the above-mentioned problems.

[0005] According to one aspect of the present application, a contact measuring device is provided, wherein the contact measuring device is configured to contact a surface of a wafer in a wafer thinning device to measure the thickness of the wafer, and comprises: A first mounting seat, which is arranged on the side of the wafer-carrying platform and is configured with a mounting hole; a first measuring rod mounted to the mounting hole and extending horizontally above the supporting platform, a first measuring head extending vertically disposed at a distal end of the first measuring rod, the first measuring rod being configured to be able to be raised and lowered in the mounting hole so that the first measuring head contacts the wafer and to be raised and lowered as the thickness of the wafer changes during wafer processing; A protective air pipe and a protective liquid pipe, both of which are located between the mounting hole and the first measuring head and extend horizontally above the first measuring rod perpendicular to the first measuring rod, the protective air pipe is closer to the first measuring head than the protective liquid pipe; the protective air pipe is constructed with a ventilation groove extending along its length and opening downward, and the protective liquid pipe is constructed with a liquid groove extending along its length and opening downward, the ventilation groove is configured to discharge air downward to form an air curtain to prevent processing debris from entering the mounting hole, and the liquid groove is configured to discharge liquid downward to form a liquid curtain to prevent processing debris passing through the air curtain from entering the mounting hole.

[0006] Optionally or alternatively, the contact measuring device includes a base, which is fixedly mounted to the base of the wafer thinning equipment, and the first mounting seat is mounted to the side of the base facing the supporting platform of the wafer thinning equipment; the top of the base is fixedly connected to a bracket extending above the first mounting seat, and a shunt block is mounted on the bracket, and the protective air pipe and the protective liquid pipe are mounted to the shunt block and are respectively connected to the shunt air path and shunt liquid path fluids in the shunt block.

[0007] Optionally or alternatively, the shielding air pipe is electrically connected to an actuator, and the actuator is configured to actuate the shielding air pipe to rotate around its axis based on the pressure of the air flow carrying the machining debris, so as to adjust the angle between the ventilation groove and the vertical plane.

[0008] Optionally or alternatively, the shielding air pipe is fluidly connected to an air supply source, an air pressure regulator is provided between the shielding air pipe and the air supply source, and the air pressure regulator is configured to adjust the outlet pressure of the ventilation groove based on the pressure of the air flow carrying the machining debris.

[0009] Optionally or alternatively, the shielding liquid pipe is fluidically connected to a liquid supply source, a flow regulator is provided between the shielding liquid pipe and the liquid supply source, and the flow regulator is configured to adjust the liquid outlet speed of the liquid passage groove based on the pressure of the airflow carrying the machining debris.

[0010] Optionally or alternatively, the contact measuring device includes a pressure sensor disposed on the first probe, the pressure sensor is disposed toward an incoming flow direction of the airflow carrying the machining debris and is configured to detect the pressure of the airflow carrying the machining debris.

[0011] Optionally or alternatively, the outlet air pressure of the ventilation groove is 0.3 to 0.7 MPa; and / or the outlet liquid flow rate of the liquid passage groove is 1-2 L / min.

[0012] Optionally or alternatively, the wall surface of the ventilation groove is configured to be inclined away from the first mounting seat by 0 to 15 degrees to form an impact with the airflow carrying the machining debris and flowing toward the first mounting seat.

[0013] Optionally or alternatively, the positions of the protective air pipe and the protective liquid pipe are both higher than the mounting hole, and the height of the protective air pipe is equal to or higher than the height of the protective liquid pipe.

[0014] Optionally or alternatively, the carrier table fixes the wafer by vacuum adsorption; the projection of the axis of the protective liquid tube to the surface of the carrier table is tangent to the projection of the outer circumference of the wafer to the surface of the carrier table, so that the liquid curtain can wash away the processing debris at the contact point between the edge of the wafer and the carrier table.

[0015] Optionally or alternatively, the contact measuring instrument also includes a second protective air pipe arranged between the protective liquid pipe and the first mounting seat, the second protective air pipe extends horizontally above the first measuring rod and perpendicular to the first measuring rod, the second protective air pipe is constructed with a second ventilation groove extending along its length and opening downward, the second ventilation groove exhausts air downward to form an air curtain to prevent processing debris and liquid droplets from entering the mounting hole.

[0016] Optionally or alternatively, the second protective air pipe is located higher than the mounting hole, and the positions of the second protective air pipe, the protective liquid pipe and the protective air pipe are successively increased.

[0017] Optionally or alternatively, an air outlet channel in fluid communication with the mounting hole is configured in the first mounting seat, and the air outlet channel is configured to blow air toward the mounting hole to blow out machining debris or liquid droplets entering the mounting hole.

[0018] Optionally or alternatively, the mounting hole is configured as an expanded hole which gradually expands toward the cross section of the supporting platform, and a bottom wall surface thereof gradually slopes downward to facilitate the discharge of machining debris or liquid droplets.

[0019] Optionally or alternatively, the contact measuring device includes a second mounting seat having the same structure as the first mounting seat and a second measuring rod having the same structure as the first measuring rod, a second measuring probe extending vertically is provided at the end of the second measuring rod, the second measuring probe is configured to contact the support platform to measure the height of the support platform surface, and the contact measuring device obtains the thickness of the wafer based on the difference between the height of the wafer surface measured by the first measuring probe and the height of the support platform surface measured by the second measuring probe.

[0020] According to another aspect of the present application, a wafer thinning device is provided, the wafer thinning device includes a grinding module, the grinding module includes: a turntable provided with a carrier platform, the carrier platform is used to carry the wafer; a grinding device for grinding the wafer; and a contact measuring instrument as described in the above aspects.

[0021] Optionally or alternatively, the turntable has three carriers arranged in a circular array, and the turntable rotates so that two of the three carriers are located at two processing positions below the grinding device, and the wafer thinning equipment includes two contact measuring devices arranged between the two processing positions, and the two contact measuring devices are arranged back to back to each other and are respectively used for measuring the thickness of wafers on the two carriers at the two processing positions.

[0022] According to the contact measuring instrument and wafer thinning equipment of the present application, by arranging a protective air pipe and a protective liquid pipe, at least two layers of protective curtains are formed between the mounting hole and the probe. The airflow carrying processing debris is blocked by the air curtain and the liquid curtain in turn during the flow toward the mounting seat, which significantly reduces the accumulation of processing debris in the mounting hole, avoids interference or hindrance of the measuring rod lifting and lowering by the processing debris, and can reduce the pollution near the root of the measuring rod, effectively improving the working effectiveness of the contact measuring instrument and the accuracy of wafer grinding thickness measurement, thereby providing an accurate basis for controlling the grinding wheel feed amount or the remaining grinding time during the grinding process, ensuring the processing accuracy of the wafer, and facilitating the realization of sub-nanometer or even nanometer processing accuracy of wafer grinding and thinning. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0024] Figure 1 A three-dimensional schematic diagram of a wafer thinning device according to an embodiment of the present application is shown; Figure 2 The measurement principle diagram of a contact measuring device is shown. Figure 2 Figure a is a schematic diagram of zero adjustment before measurement. Figure 2 b in the figure is a schematic diagram during measurement; Figure 3 Shows Figure 2 Schematic diagram of the contact measuring device in operation; Figure 4 Shows Figure 2 A partial stereogram of a contact measuring device in FIG. Figure 5 A schematic top view of a contact measuring device according to an embodiment of the present application is shown; Figure 6 Shows Figure 5 A schematic bottom view of the protective air tube of the contact measuring device; Figure 7 Shows Figure 5 A partial three-dimensional schematic diagram of a contact measuring device; Figure 8 Shows Figure 5 A schematic diagram of the contact measuring device in operation; Fig. 9 A schematic diagram of a contact measurement device is shown.

[0025] Reference numerals: W, wafer; 1, wafer thinning equipment; 2, grinding device; 21, rough grinding section; 211, rough grinding wheel; 22, fine grinding section; 221, fine grinding wheel; 31, turntable; 32, carrier platform; 5, cleaning unit; 6, manipulator; 4, measuring unit; 100, contact measuring device; 110, first mounting seat; 1101, mounting hole; 111, first measuring rod; 112, first measuring head; 120, second mounting seat; 121, second measuring rod; 122, second measuring head; 10, base; 11, diverter; 20, bracket; 30, diverter block; 130, protective air pipe; 131, ventilation groove; 140, protective liquid pipe; 201, air curtain; 202, liquid curtain; 101, pressure sensor; 151, first spray pipe; 152, second spray pipe. DETAILED DESCRIPTION

[0026] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the embodiments of the present application should fall within the scope of protection of the embodiments of the present application.

[0027] In the description of the present application, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0028] In addition, in the description of the present application, unless otherwise specified and limited, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal connection between two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances.

[0029] Figure 1A wafer thinning device 1 provided by an embodiment of the present invention is shown in a schematic stereoscopic diagram, comprising: a turntable 31, which can rotate and support a plurality of carriers 32; the carriers 32, which vacuum adsorb and hold the wafer W and can drive the wafer W to rotate; a grinding device 2, the grinding device 2 comprising a spindle unit and a grinding wheel connected to the spindle unit, the grinding wheel abuts against the wafer W to grind and thin the wafer W, the spindle unit can feed vertically and / or horizontally and adjust the front and rear or left and right tilt to adjust the feed amount of the grinding wheel. Specifically, the grinding device 2 may include a rough grinding section 21 and a fine grinding section 22, the rough grinding section 21 includes a rough grinding spindle unit and a rough grinding wheel 211, and the fine grinding section 22 includes a fine grinding spindle unit and a fine grinding wheel 221.

[0030] Specifically, the turntable 31 is provided with a plurality of carriers 32 for holding the wafer W and driving the wafer W to rotate. The turntable 31 can rotate around its vertical center axis so that the turntable 31 drives the plurality of carriers 32 to rotate and move as a whole, thereby realizing the position switching of the carriers 32 between different workstations. Each carrier 32 can also rotate on its own. Figure 1 As shown, as an implementation method, three rotatable carriers 32 are evenly distributed on the turntable 31, each having a suction cup for adsorbing the wafer W. The three suction cups can be porous ceramic suction cups to achieve vacuum adsorption of the wafer W, and the three carriers 32 form a circular array with the center of the turntable 31 as the center of the circle, and two adjacent carriers 32 form an angle of 120°. The three carriers 32 correspond to three stations, namely, the rough grinding station, the fine grinding station and the loading and unloading station, wherein the rough grinding station and the fine grinding station are two processing stations, respectively located below the rough grinding part 21 and the fine grinding part 22 of the grinding device 2, and the remaining station is used for loading and unloading and cleaning of the wafer W. The rotation of the turntable 31 can drive the three carriers 32 to switch between the three stations, so that the carrier 32 carrying the wafer W can be cyclically moved in the order of loading and unloading station-rough grinding station-fine grinding station-loading and unloading station. This embodiment realizes fully automatic loading and unloading, continuous grinding and cleaning of the wafer W through repeated cycles. The use of the rotary turntable 31 for grinding the wafer W has the advantages of high material removal rate, small surface damage of the wafer W, and easy automation.

[0031] The wafer thinning device 1 may also include a cleaning unit 5, which includes a first cleaning part and a second cleaning part. The first cleaning part uses, for example, an oilstone to clean and grind the carrier 32, and the second cleaning part uses, for example, a brush to clean the wafer W. The wafer thinning device 1 may also include a manipulator 6, which is used to place the wafer W on the carrier 32 in the loading and unloading position, and to remove the wafer W from the carrier 32 for subsequent transmission after grinding and cleaning. As an implementable embodiment, a pipeline for vacuuming is provided inside the manipulator 6 to achieve vacuum adsorption of the wafer W. In addition, in a specific implementation, the wafer thinning device 1 also includes a grinding fluid supply unit, which is used to spray grinding fluid onto the surface of the wafer W to assist grinding during rough grinding and / or fine grinding, and the grinding fluid may be deionized water.

[0032] like Figure 1 As shown, the wafer thinning device 1 also includes a measuring unit 4, which may include a contact measuring device 100 and a non-contact optical measuring device (not shown), which can realize online monitoring of the thickness of the wafer W. The probe of the contact measuring device 100 contacts the surface of the wafer W to measure the thickness of the wafer W. The measuring unit 4 may include two contact measuring devices 100 arranged back to back to each other, respectively used for measurement at two processing positions. The non-contact optical measuring device can use infrared light to illuminate the wafer W and calculate the thickness of the wafer W based on the different reflected light from the upper and lower surfaces of the wafer W.

[0033] Figure 2 The detection principle diagram of a contact measuring device 100 is shown. The contact sensor may include a first mounting seat 110 and a first measuring rod 111. The first mounting seat 110 is arranged on the side of the carrier 32 carrying the wafer W and is configured with a mounting hole 1101 (see Figure 4 ). The first measuring rod 111 is mounted to the mounting hole 1101 and extends horizontally to above the carrier 32. A vertically extending first probe 112 is disposed at the end of the first measuring rod 111. The first measuring rod 111 is configured to be able to rise and fall in the mounting hole 1101 so that the first probe 112 contacts the wafer W and rise and fall as the thickness of the wafer W changes during the processing of the wafer W. The contact measuring device 100 may also include a second mounting seat 120 having the same structure as the first mounting seat 110 and a second measuring rod 121 having the same structure as the first measuring rod 111. The horizontal extension distance of the second measuring rod 121 may be smaller than that of the first measuring rod 111. A vertically extending second probe 122 is disposed at the end of the second measuring rod 121. The second probe 122 is configured to contact the carrier 32 to measure the height of the surface of the carrier 32. The contact measuring device 100 obtains the thickness of the wafer W based on the difference between the height of the surface of the wafer W measured by the first probe 112 and the height of the surface of the carrier 32 measured by the second probe 122. Specifically, as Figure 2As shown in Figure a, zeroing can be performed before measurement. When no crystal is placed on the carrier 32, the first probe 112 and the second probe 122 are both in contact with the surface of the carrier 32, and the measurement height of the first probe 112 and the measurement height of the second probe 122 are both set to zero. Figure 2 As shown in Figure b, during measurement, the height measured by the first probe 112 minus the height measured by the second probe 122 is the real-time thickness of the wafer W. The grinding device 2 can correct the grinding wheel feed amount during the thinning process based on the wafer W thickness measured by the contact measuring device 100, thereby achieving real-time monitoring and control of the grinding and thinning process and ensuring the processing accuracy of the wafer W.

[0034] In addition, in an optional embodiment, the second mounting seat 120 and the second measuring rod 121 may be omitted, and only the first mounting seat 110 and the first measuring rod 111 may be used. In this case, the first measuring rod 111 may be extended and retracted before measurement to make the first measuring head 112 contact the surface of the supporting platform 32 for measurement, and the measured height of the surface of the supporting platform 32 is used as a reference height. The first measuring rod 111 is then extended and retracted to make the first measuring head 112 contact the surface of the wafer W for real-time measurement. The height of the surface of the wafer W measured by the first measuring head 112 minus the reference height is the real-time thickness of the wafer W.

[0035] Figure 3 Shows Figure 2 Schematic diagram of the contact measuring device 100 in operation. During the grinding and thinning process of the wafer W, a large amount of processing debris, such as silicon powder and crystal slag, is generated. Under the high-speed rotation of the spindle unit (such as the rough grinding spindle unit), the airflow generated will drive the processing debris to flow toward the contact measuring device 100, and some of the processing debris will be blown into the mounting hole 1101 of the contact measuring device 100. Figure 4 Shows Figure 2 In the partial stereoscopic view of the contact measuring device 100, it can be seen that the machining debris accumulated in the mounting hole 1101 (as shown by the black solid pattern) will hinder the normal descent of the first measuring rod 111, so that the first measuring rod 111 cannot be lowered as the thickness of the wafer W decreases during the measurement process, so that the contact measuring device 100 cannot work normally, resulting in inaccurate measured thickness of the wafer W, and thus unable to correctly guide the grinding device 2 to control the feed amount of the grinding wheel, affecting the normal operation of the wafer thinning equipment.

[0036] To this end, the present application provides a contact measuring device 100, Figure 5 FIG. 1 shows a schematic top view of a contact measuring device 100 according to an embodiment of the present application. Figure 6 Shows Figure 5 A bottom view of the protective air tube 130 of the contact measuring device 100; Figure 7 Shows Figure 5FIG. 1 is a partial three-dimensional schematic diagram of the contact measuring device 100. Figure 5 The contact measuring device 100 in the embodiment includes a base 10, a first mounting seat 110, a first measuring rod 111, a first measuring head 112, a second mounting seat 120, a second measuring rod 121, a second measuring head 122, etc. The base 10 can be fixedly mounted to the base of the wafer thinning device, and the first mounting seat 110 and the second mounting seat 120 are mounted in parallel to the side of the base 10 facing the carrier 32 of the wafer thinning device. The top of the base 10 is fixedly connected to a bracket 20 extending above the first mounting seat 110 (see Fig. 9 ), a shunt block 30 is installed on the bracket 20, and the protective air pipe 130 and the protective liquid pipe 140 are installed to the shunt block 30, and can be connected to the shunt air path and shunt liquid path fluid in the shunt block 30 through pipelines respectively.

[0037] Specifically, see Figure 7 The first mounting seat 110 is arranged on the side of the carrier 32 carrying the wafer W and is configured with a mounting hole 1101. The first measuring rod 111 extends horizontally to the top of the carrier 32. The end of the first measuring rod 111 is provided with a first probe 112 extending vertically. The first measuring rod 111 is configured to be able to rise and fall in the mounting hole 1101 so that the first probe 112 contacts the wafer W and rise and fall with the change of the thickness of the wafer W during the processing of the wafer W. The second mounting seat 120 has the same structure as the first mounting seat 110. The second measuring rod 121 has the same structure as the first measuring rod 111. The end of the second measuring rod 121 is provided with a second probe 122 extending vertically. The second probe 122 is configured to contact the carrier 32 to measure the height of the surface of the carrier 32. The contact measuring device 100 obtains the thickness of the wafer W based on the difference between the height of the surface of the wafer W measured by the first probe 112 and the height of the surface of the carrier 32 measured by the second probe 122.

[0038] Also like Figure 7 The protective air pipe 130 and the protective liquid pipe 140 are located between the mounting hole 1101 and the first measuring head 112, and extend horizontally perpendicular to the first measuring rod 111 above the first measuring rod 111 and the second measuring rod 121 not shown, that is, from Figure 5 From the top view, the protective air pipe 130 and the protective liquid pipe 140 are parallel, and the two are respectively in a cross shape with the first measuring rod 111 and the second measuring rod 121. The protective air pipe 130 is closer to the first measuring head 112 than the protective liquid pipe 140. Figure 6 As shown, the protective air tube 130 is configured with a ventilation groove 131 extending along its length and opening downwards, and similarly, the protective liquid tube 140 is configured with a liquid passage groove (not shown) extending along its length and opening downwards. Figure 6 The pipe perpendicular to the protective air pipe 130 shown in FIG. 1 is an embodiment of the pipe connecting the protective air pipe 130 and the diverter block 30. Figure 7 It can be seen that the venting groove 131 is configured to discharge air downward to form an air curtain 201 to prevent machining debris from entering the mounting hole 1101, and the liquid passage groove is configured to discharge liquid downward to form a liquid curtain 202 to prevent machining debris passing through the air curtain 201 from entering the mounting hole 1101. It should be understood that Figure 7 In the figure, the gas curtain 201 is indicated by a plurality of parallel curved lines, and the liquid curtain 202 is indicated by a plurality of parallel dotted lines. In the actual implementation, both the gas curtain 201 and the liquid curtain 202 are uninterrupted whole curtains. Figure 6 The vent groove 131 shown in the figure is a straight long and narrow groove. In an optional embodiment, the vent groove 131 and the liquid passage groove can also be curved or wavy long and narrow grooves. The gas ejected from the vent groove 131 can be compressed air, and the liquid ejected from the liquid passage groove can be deionized water.

[0039] Figure 8 Shows Figure 5 Schematic diagram of the contact measuring device 100 in operation. The airflow carrying the machining debris is blocked by the air curtain 201 and the liquid curtain 202 in sequence when flowing toward the first mounting seat 110 and the second mounting seat 120, thereby significantly reducing the accumulation of machining debris in the mounting hole 1101 and reducing the contamination near the roots of the first measuring rod 111 and the second measuring rod 120, effectively improving the cleanliness, working effectiveness and measurement accuracy of the contact measuring device 100, facilitating the reasonable control of the grinding wheel feed amount during the grinding process, and ensuring the accuracy of wafer W processing.

[0040] In a specific embodiment, the protective air pipe 130 is fluidically connected to the air supply source, and an air pressure regulator is disposed between the protective air pipe 130 and the air supply source. The air pressure regulator is configured to adjust the outlet pressure of the ventilation slot 131 based on the pressure of the airflow carrying the machining debris, and the outlet air pressure can be between 0.3 and 0.7 MPa. The protective liquid pipe 140 is fluidically connected to the liquid supply source, and a flow regulator is disposed between the protective liquid pipe 140 and the liquid supply source. The flow regulator is configured to adjust the outlet flow rate of the liquid through the liquid slot based on the pressure of the airflow carrying the machining debris, and the outlet flow rate can be between 1-2 L / min. Figure 7 The contact measuring device 100 may include a pressure sensor 101 disposed on the first probe 112 or the second probe 122. The pressure sensor 101 may be disposed toward the grinding device 2, specifically toward the flow direction of the airflow carrying the machining debris, preferably facing the flow direction of the airflow carrying the machining debris, and is configured to detect the pressure of the airflow carrying the machining debris, and communicate with the air pressure regulator and the flow regulator to provide adjustment reference information for the two.

[0041] In a preferred embodiment, the protective air pipe 130 is electrically connected to an actuator, and the actuator can be configured to communicate with the pressure sensor 101 and actuate the protective air pipe 130 to rotate around its axis based on the pressure of the airflow carrying the machining debris, so as to adjust the angle between the ventilation groove 131 and the vertical plane. In a specific implementation, the protective air pipe 130 and the pipeline between the diverter block 30 can be connected by a rotary joint, or the pipeline between the protective air pipe 130 and the diverter block 30 and the protective air pipe 130 can be connected by a supportive flexible connection method such as a bellows, so as to achieve a small range of rotation of the protective air pipe 130 and ensure the sealing of the connection.

[0042] In a further embodiment, the wall surface of the ventilation groove 131 is configured to be inclined 0 to 15 degrees away from the first mounting seat 110, that is, inclined 0 to 15 degrees toward the spindle unit, so that the air curtain 201 is inclined toward the spindle unit to form an offset with the airflow carrying the processing debris flowing toward the first mounting seat 110, slowing down the speed of the airflow carrying the processing debris, thereby reducing the processing debris passing through the air curtain 201 and the liquid curtain 202 and entering the mounting hole 1101. Optionally, the wall surface of the liquid passage groove may also have an inclination angle away from the first mounting seat 110, such as 0 to 15 degrees, preferably 1 to 10 degrees.

[0043] In terms of setting height, the positions of the protective air pipe 130 and the protective liquid pipe 140 are both higher than the mounting hole 1101, and the height of the protective air pipe 130 is equal to or higher than the height of the protective liquid pipe 140, so as to form a double protection structure, so as to prevent the upper processing debris from directly passing over the protective air pipe 130 due to the protective air pipe 130 being lower than the protective liquid pipe 140. Preferably, the height of the protective air pipe 130 is higher than the height of the protective liquid pipe 140, so as to facilitate the pipe connection of the protective air pipe 130 and the protective liquid pipe 140 with the diverter block 30, and to prevent the protective liquid pipe 140 from interfering with the connection of the protective air pipe 130.

[0044] In a preferred embodiment, the projection of the axis of the protective liquid tube 140 to the surface of the carrier 32 is tangent to the projection of the outer circumference of the wafer W to the surface of the carrier 32, that is, the protective liquid tube 140 is arranged directly above the outer circumference of the wafer W, so that the liquid curtain 202 can wash the processing debris at the contact between the edge of the wafer W and the carrier 32. Since the carrier 32 adsorbs and fixes the wafer W by vacuum adsorption, the processing debris can be easily sucked into the porous adsorption plate of the carrier 32 from the edge of the wafer W, resulting in poor adsorption or blocking the pores of the porous adsorption plate. By arranging the protective liquid tube 140 directly above the tangent of the outer circumference of the wafer W, the liquid curtain 202 can wash the processing debris at the contact between the edge of the wafer W and the carrier 32, avoiding the accumulation of processing debris at the edge of the wafer W and scratching or contaminating the wafer, and avoiding the processing debris being adsorbed into the carrier 32 and causing poor adsorption.

[0045] In a preferred embodiment, the contact measuring device 100 further includes a second protective air pipe (not shown) disposed between the protective liquid pipe 140 and the first mounting seat 110. The second protective air pipe extends horizontally above the first measuring rod 111 and perpendicular to the first measuring rod 111. The second protective air pipe is configured with a second ventilation groove extending along its length and opening downward. The second ventilation groove exhausts air downward to form an air curtain 201 to prevent machining debris and liquid droplets from entering the mounting hole 1101. That is, the structures of the second protective air pipe and the protective air pipe 130 can be substantially the same. The position of the second protective air pipe is higher than the mounting hole 1101. The positions of the second protective air pipe, the protective liquid pipe 140, and the protective air pipe 130 can be successively raised to form a stepped triple protection structure.

[0046] In a preferred embodiment, an air outlet channel is constructed in the first mounting seat 110 and is fluidly connected to the mounting hole 1101. The air outlet channel can be connected to a compressed air source and is configured to blow air into the mounting hole 1101 to actively blow out processing debris or droplets entering the mounting hole 1101.

[0047] In a preferred embodiment, the mounting hole 1101 is configured as an expanded hole whose cross section gradually expands toward the support platform 32, and its bottom wall gradually slopes downward to facilitate the discharge of machining debris or droplets along the inclined bottom wall under the action of gravity.

[0048] like Fig. 9 FIG. 1 shows a contact measuring device, which includes two contact measuring devices 100 arranged back to back. The two contact measuring devices 100 can be directly connected back to back, or as shown in FIG. Fig. 9 As shown, the respective bases 10 are integrally formed into a common base 10. Fig. 9 In the figure, a bracket 20 for supporting the diverter block 30 can be seen, and a diverter 11 can also be installed on the top of the base 10. The interface on the top of the diverter 11 is used to connect with the gas source or liquid source in the wafer thinning equipment, and the interface on the side of the diverter 11 is used to communicate with the diverter gas path and diverter liquid path fluid in the diverter block 30 through a pipeline (not shown). Through the arrangement of the diverter 11 and the diverter block 30, it is possible to reduce the bending, interference or entanglement of the pipeline due to the change of direction, reduce the vibration of the pipeline, ensure the stability of the contact measuring instrument 100 itself, reduce the jitter deviation of the measurement result, increase the smoothness and stability of the fluid flow in the pipeline, thereby reducing the occurrence of fluid turbulence in the pipeline, and ensure that the speed or fluid pressure of the gas or liquid flowing out of the gas outlet slot and the liquid outlet slot is uniform and controllable.

[0049] In a preferred embodiment, Fig. 9As shown, a first spray pipe 151 and a second spray pipe 152 extending parallel to the first measuring rod 111 and the second measuring rod 121 may be respectively arranged above the first measuring rod 111 and the second measuring rod 121 to spray, rinse and cool the first measuring rod 111 and the second measuring rod 121 respectively.

[0050] The contact measuring device 100 described above can be applied to wafer thinning equipment, for example Figure 1 The wafer thinning apparatus shown serves as a measuring unit 4 or a part of a measuring unit 4 .

[0051] The above implementation methods are only used to illustrate the embodiments of the present application, and are not limitations on the embodiments of the present application. Ordinary technicians in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application. Therefore, all equivalent technical solutions also belong to the scope of the embodiments of the present application. The scope of patent protection of the embodiments of the present application should be limited by the claims.

Claims

1. A contact measuring device, characterized in that: The contact measuring device is configured to contact the surface of a wafer in a wafer thinning device to measure the thickness of the wafer, and comprises: A first mounting seat, which is arranged on the side of the wafer-carrying platform and is configured with a mounting hole; a first measuring rod mounted to the mounting hole and extending horizontally above the supporting platform, a first measuring head extending vertically disposed at a distal end of the first measuring rod, the first measuring rod being configured to be able to be raised and lowered in the mounting hole so that the first measuring head contacts the wafer and to be raised and lowered as the thickness of the wafer changes during wafer processing; A protective air pipe and a protective liquid pipe, both of which are located between the mounting hole and the first measuring head and extend horizontally above the first measuring rod perpendicular to the first measuring rod, the protective air pipe is closer to the first measuring head than the protective liquid pipe; the protective air pipe is constructed with a ventilation groove extending along its length and opening downward, and the protective liquid pipe is constructed with a liquid groove extending along its length and opening downward, the ventilation groove is configured to discharge air downward to form an air curtain to prevent processing debris from entering the mounting hole, and the liquid groove is configured to discharge liquid downward to form a liquid curtain to prevent processing debris passing through the air curtain from entering the mounting hole.

2. The contact measuring device according to claim 1, characterized in that: The contact measuring instrument includes a base, which is fixedly mounted to the base of the wafer thinning equipment, and the first mounting seat is mounted to the side of the base facing the supporting platform of the wafer thinning equipment; the top of the base is fixedly connected to a bracket extending above the first mounting seat, and a shunt block is mounted on the bracket, and the protective air pipe and the protective liquid pipe are mounted to the shunt block and are respectively connected to the shunt air path and shunt liquid path fluids in the shunt block.

3. The contact measuring device according to claim 1, characterized in that: The shielding air pipe is electrically connected to an actuator, and the actuator is configured to actuate the shielding air pipe to rotate around its axis based on the pressure of the air flow carrying the machining debris, so as to adjust the angle between the ventilation groove and the vertical plane.

4. The contact measuring device according to claim 1, characterized in that: The protective air pipe is fluidically connected to an air supply source, and an air pressure regulator is disposed between the protective air pipe and the air supply source. The air pressure regulator is configured to adjust an outlet air pressure of the ventilation groove based on the pressure of the air flow carrying the machining debris.

5. The contact measuring device according to claim 1, characterized in that: The protection liquid pipe is fluidically connected to a liquid supply source. A flow regulator is disposed between the protection liquid pipe and the liquid supply source. The flow regulator is configured to adjust a liquid outlet speed of the liquid passage groove based on a pressure of an airflow carrying the machining debris.

6. The contact measuring device according to any one of claims 2 to 5, characterized in that: The contact measuring device includes a pressure sensor disposed on the first probe, the pressure sensor being disposed toward an incoming flow direction of the airflow carrying the machining debris and configured to detect a pressure of the airflow carrying the machining debris.

7. The contact measuring device according to claim 5, characterized in that: The outlet pressure of the ventilation groove is 0.3 to 0.7 MPa; and / or the outlet flow rate of the liquid through the liquid groove is 1-2 L / min.

8. The contact measuring device according to any one of claims 1 to 5, characterized in that: The wall surface of the ventilation groove is configured to be inclined away from the first mounting seat at an angle of 0 to 15 degrees so as to counteract the airflow carrying the machining debris and flowing toward the first mounting seat.

9. The contact measuring device according to any one of claims 1 to 5, characterized in that: The positions of the protective air pipe and the protective liquid pipe are both higher than the mounting hole, and the height of the protective air pipe is equal to or higher than the height of the protective liquid pipe.

10. The contact measuring device according to any one of claims 1 to 5, characterized in that: The carrier table fixes the wafer by vacuum adsorption; the projection of the axis of the protective liquid tube to the surface of the carrier table is tangent to the projection of the outer circumference of the wafer to the surface of the carrier table, so that the liquid curtain can wash away the processing debris at the contact point between the edge of the wafer and the carrier table.

11. The contact measuring device according to any one of claims 1 to 5, characterized in that: The contact measuring instrument also includes a second protective air pipe arranged between the protective liquid pipe and the first mounting seat, the second protective air pipe extends horizontally above the first measuring rod and perpendicular to the first measuring rod, the second protective air pipe is constructed with a second ventilation groove extending along its length and opening downward, the second ventilation groove exhausts air downward to form an air curtain to prevent processing debris and liquid droplets from entering the mounting hole.

12. The contact measuring device according to claim 11, characterized in that: The position of the second protective air pipe is higher than the mounting hole, and the positions of the second protective air pipe, the protective liquid pipe and the protective air pipe are successively increased.

13. The contact measuring device according to any one of claims 1 to 5, characterized in that: An air outlet channel in fluid communication with the mounting hole is configured in the first mounting seat, and the air outlet channel is configured to blow air toward the mounting hole to blow out machining debris or liquid droplets entering the mounting hole.

14. The contact measuring device according to any one of claims 1 to 5, characterized in that: The mounting hole is configured as an expanded hole that gradually expands toward the cross section of the supporting platform, and a bottom wall surface thereof gradually slopes downward to facilitate the discharge of machining debris or liquid droplets.

15. The contact measuring device according to any one of claims 1 to 5, characterized in that: The contact measuring device includes a second mounting seat having the same structure as the first mounting seat and a second measuring rod having the same structure as the first measuring rod. A second measuring probe extending vertically is provided at the end of the second measuring rod. The second measuring probe is configured to contact the supporting platform to measure the height of the supporting platform surface. The contact measuring device obtains the thickness of the wafer based on the difference between the height of the wafer surface measured by the first measuring probe and the height of the supporting platform surface measured by the second measuring probe.

16. A wafer thinning device, characterized in that: The wafer thinning device comprises a grinding module, and the grinding module comprises: A turntable is provided with a carrying platform, wherein the carrying platform is used to carry the wafer; A grinding device for grinding wafers; A contact measuring device as claimed in any one of claims 1 to 15.

17. The wafer thinning device according to claim 16, characterized in that: The turntable has three carriers arranged in a circular array, and the turntable rotates so that two of the three carriers are located at two processing positions below the grinding device. The wafer thinning equipment includes two contact measuring devices arranged between the two processing positions, and the two contact measuring devices are arranged back to back to each other and are respectively used for measuring the thickness of wafers on the two carriers at the two processing positions.

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