Silicon carbide ring for plasma etching equipment and forming process of silicon carbide ring

Abstract

The invention discloses a silicon carbide ring for plasma etching equipment and a forming process of the silicon carbide ring, and relates to the technical field of silicon carbide ring forming. Comprising the steps that a basic silicon carbide ring is formed in the groove, and a notch matched with the special-shaped boss is formed in the bottom of the basic silicon carbide ring; and the heating device is closed, the basic silicon carbide ring is turned over after cooling, the notch is filled with an additional filling material, and the additional filling material is selectively added based on the use scene of the silicon carbide ring. A specific filling material and a curing process are adopted, after the silicon carbide film is deposited, the shape of the special-shaped boss is matched with the shape of the bottom of the groove, so that the deposited filling material can be distributed to the two sides of the boss through the special-shaped boss, and the silicon carbide ring is reinforced by the gap filling material through the inside; the diffusion of the silicon carbide material is reduced while the generation of gaps is reduced, and the situation that the radial thickness difference of the deposited silicon carbide layer is large is relieved.

Description

Technical Field

[0001] The invention relates to the technical field of silicon carbide ring forming, in particular to a silicon carbide ring for plasma etching equipment and a forming process of the silicon carbide ring. Background Art

[0002] As an excellent third-generation semiconductor material, silicon carbide (SiC) material has the advantages of high thermal conductivity, resistance to plasma etching, oxidation resistance, damage resistance, corrosion resistance, and high-temperature stability. At present, the common substrate for chemical vapor deposition of silicon carbide rings is high-purity graphite material. In the forming process of silicon carbide rings, the high-purity graphite substrate is first placed in a chemical vapor deposition reactor, and then the silicon carbide film is deposited through chemical reaction under high temperature and low pressure conditions. During the deposition process, the flow, temperature and pressure of the reaction gas are strictly controlled to ensure the uniformity and quality of the silicon carbide film. After the deposition is completed, the silicon carbide film is processed into the required silicon carbide ring structure through subsequent cutting, grinding and polishing processes.

[0003] After searching, the Chinese invention patent with publication number "CN115595552A" discloses "Silicon carbide ring for plasma etching equipment and silicon carbide ring forming process". This application sets a groove on the outer ring surface of the annular substrate. When the heating device surrounding the substrate heats, the groove structure can improve the temperature difference caused by the difference in the spatial position of the inner and outer sides of the substrate and the heating device, improve the temperature uniformity in the radial direction of the substrate surface, and make the silicon carbide material deposition on the substrate surface more uniform. By designing the chamfer transition between the upper and lower surfaces of the substrate and the outer ring surface, the chemical vapor deposition reaction boundary layer caused by the thick outer edge of the substrate and the influence of the nucleation and diffusion of the silicon carbide material to the inner side of the substrate are reduced, which can further improve the uniformity of the silicon carbide material deposition and reduce the radial thickness difference of the silicon carbide layer.

[0004] However, in actual use, the above-mentioned patents and similar patents have uneven temperature distribution due to the spatial position difference between the inner and outer sides of the substrate and the heating device, which may affect the deposition uniformity of the silicon carbide film. In addition, the thick outer edge of the substrate may affect the boundary layer of the chemical vapor deposition reaction, thereby affecting the diffusion of the silicon carbide material, resulting in large differences in the radial thickness of the deposited silicon carbide layer. Summary of the invention

[0005] The object of the present invention is to provide a silicon carbide ring for plasma etching equipment and a forming process of the silicon carbide ring to solve the problems raised in the above background technology.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] In the first aspect, a silicon carbide ring forming process is proposed, including:

[0008] The selected silicon carbide ring substrate is installed in the reaction chamber of the chemical vapor deposition equipment, wherein the silicon carbide ring substrate is ring-shaped and has a groove extending from the outer ring surface to the inner ring surface, and an integrally formed special-shaped boss is fixed at the bottom of the groove, and the height of the special-shaped boss does not exceed the depth of the groove;

[0009] The furnace body of the chemical vapor deposition equipment defines the reaction chamber, and a heating device is provided on the furnace body, and the heating device is sleeved inside the silicon carbide ring substrate;

[0010] Performing a vacuum treatment on the reaction chamber;

[0011] Running a heating device to heat the reaction chamber to a preset temperature;

[0012] A reaction gas is introduced into the reaction chamber, and the reaction gas is decomposed at a preset temperature and deposited on the surface of the silicon carbide ring substrate, and a basic silicon carbide ring is formed in the groove, and a notch matching the special-shaped boss is formed at the bottom of the basic silicon carbide ring;

[0013] Turn off the heating device, turn over the basic silicon carbide ring after cooling down, and fill the groove with additional filling material. The additional filling material is added based on the usage scenario of the silicon carbide ring;

[0014] Based on the type of filler material, a curing process is applied to the base silicon carbide ring;

[0015] After the curing process is performed, the final silicon carbide ring is obtained after inspection and surface treatment.

[0016] As a further preferred embodiment of the present technical solution, the shape of the special-shaped boss matches the shape of the bottom of the groove, so as to ensure that when the additional material is filled, the material can be evenly distributed in the groove to avoid the generation of gaps.

[0017] As a further preferred embodiment of the present technical solution, the additional filling material is any one of a ceramic material and a metal alloy, and the curing processes corresponding to the additional filling material are sintering and electroplating respectively;

[0018] The filling ceramic material is tightly combined with the silicon carbide ring by sintering to form a uniform and dense structure, which is used to improve the high temperature resistance and corrosion resistance of the silicon carbide ring;

[0019] The filler metal alloy forms a uniform metal alloy coating extending outward from the groove on the outside of the silicon carbide ring through an electroplating process, so as to improve the corrosion resistance and conductivity of the surface of the silicon carbide ring.

[0020] As a further preferred embodiment of the present technical solution, the cross-sectional shape of the groove is any one of a trapezoid and a rectangle, so that when the filling material is added, the filling material can fit closely to the shape of the groove, thereby enhancing the overall structural strength and stability of the silicon carbide ring.

[0021] As a further preferred embodiment of the present technical solution, the vacuum degree in the reaction chamber is not less than 10^-2Pa, which is used to remove oxygen and water vapor in the reaction chamber to ensure the purity of the deposition process. The heating parameters of the heating device are between 900°C and 1800°C, which are used to ensure that the reaction gas on the surface of the silicon carbide ring substrate can be fully decomposed and evenly deposited. The preset temperature is 1200°C to 1550°C.

[0022] As a further preferred embodiment of the present technical solution, the reaction gas is a mixed gas of silane gas and hydrogen, wherein the silane gas is used as a carbon source and the hydrogen is used as a carrier gas and a diluent gas to control the deposition rate and improve the deposition quality;

[0023] The ratio of the silane gas to the hydrogen gas is in the range of 1:1 to 1:10, which is used to ensure that the decomposition efficiency and deposition rate of the silane gas during the deposition process reach an optimal balance. The flow rate of the mixed gas is in the range of 100 sccm to 500 sccm, which is used to ensure that the reaction gas is evenly distributed in the reaction chamber, thereby forming a uniform and dense silicon carbide layer on the surface of the silicon carbide ring substrate.

[0024] As a further preferred embodiment of the present technical solution, the inspection and surface treatment include dimensional accuracy inspection, surface roughness inspection and non-destructive inspection of the final silicon carbide ring to ensure that the product meets the quality standards, wherein the surface treatment involves polishing and cleaning to remove surface residues and improve the surface finish and performance of the silicon carbide ring;

[0025] The standard for dimensional accuracy detection is ±0.01 mm, the standard for surface roughness detection is Ra≤0.1 μm, and non-destructive testing includes ultrasonic testing and X-ray testing, which are used to detect internal defects of the silicon carbide ring.

[0026] As a further preferred embodiment of the present technical solution, the silicon carbide ring forming process also includes heat treatment of the final silicon carbide ring to further improve its mechanical properties and durability. The heat treatment process includes placing the final silicon carbide ring in a high-temperature furnace and annealing it under nitrogen protection. The annealing temperature is controlled between 1600°C and 1900°C to eliminate residual stress inside the material.

[0027] As a further preferred embodiment of the present technical solution, the heat treatment process also includes slowly cooling the silicon carbide ring to prevent new stress from being generated due to rapid temperature changes. The slow cooling rate is controlled to decrease by 50°C to 100°C per hour to ensure that the internal stress of the material is fully released.

[0028] Secondly, in order to improve the above technical solution, a silicon carbide ring for plasma etching equipment is also proposed, wherein the silicon carbide ring for plasma etching equipment is prepared using the above silicon carbide ring forming process.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] A silicon carbide ring and a forming process for a silicon carbide ring used in a plasma etching device are provided by arranging a heating device in the inner ring of a bushing for heating, and arranging special-shaped bosses and grooves on the outer ring surface of an annular substrate, and adopting specific filling materials and a curing process. After the deposition of the silicon carbide film, since the shape of the special-shaped boss matches the shape of the bottom of the groove, the deposited filling material can be distributed to both sides of the boss through the special-shaped boss, so that the filling material can reinforce the silicon carbide ring through the inside, while reducing the generation of voids, reducing the diffusion of silicon carbide materials, and alleviating the large difference in radial thickness of the deposited silicon carbide layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a flow chart of the steps of the silicon carbide ring forming process of the present invention;

[0032] Figure 2 This is a layout diagram of the heating device of the present invention inside the ring body of the silicon carbide ring substrate. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Before delving into the specific implementation details of the present invention, it is first necessary to clarify that in the manufacturing process of the silicon carbide ring, the key steps include heating the inner ring of the bushing to a specific temperature to ensure the smooth progress of the chemical reaction during the deposition process, and then introducing the selected precursor gas into the reaction chamber. Under the high temperature of the inner ring of the bushing, these gases decompose and form a silicon carbide film.

[0035] Specifically to the present invention, Figure 1 As shown, the following steps are included: S100 to S700.

[0036] Step S100: installing the selected silicon carbide ring substrate in a reaction chamber of a chemical vapor deposition device.

[0037] In step S100, it should be clarified that the silicon carbide ring substrate is ring-shaped and has a groove extending from the outer ring surface to the inner ring surface. An integrally formed special-shaped boss is fixed at the bottom of the groove, and its height does not exceed the depth of the groove. The furnace body of the chemical vapor deposition equipment defines a reaction chamber, and the furnace body is equipped with a heating device, which surrounds the interior of the silicon carbide ring substrate.

[0038] In step S100, the installation position of the silicon carbide ring substrate should ensure that it maintains an appropriate distance from the heating device to achieve uniform heating and avoid local overheating. Specifically, Figure 2 As shown, in the present invention, the heating device is positioned inside the ring body of the silicon carbide ring substrate. This layout ensures that heat is evenly transferred to the entire surface of the silicon carbide ring substrate. In addition, during the implementation process, the top and bottom of the reaction chamber are respectively provided with a gas inlet and an outlet for introducing and exhausting the reaction gas required for chemical vapor deposition. Under the action of the heating device, the reaction gas reacts chemically with the surface of the silicon carbide ring substrate to form the desired deposition layer.

[0039] Step S200: vacuumizing the reaction chamber.

[0040] In the present invention, the purpose of step S200 is to ensure that a predetermined vacuum degree is reached in the reaction chamber to reduce unnecessary chemical reactions between the reaction gas and impurities in the air. After the vacuum treatment, the pressure in the reaction chamber should be lower than the atmospheric pressure.

[0041] Specifically, in the present invention, the vacuum degree in the reaction chamber is not less than 10^-2Pa, which helps to remove oxygen and water vapor in the reaction chamber and ensure the purity of the deposition process.

[0042] Step S300: Start the heating device to heat the reaction chamber to a set temperature.

[0043] It should be clear that in the present invention, step S300 is intended to ensure that the substrate reaches the temperature required for deposition. Once the preset temperature is reached, the temperature distribution on the substrate surface should remain uniform to ensure the quality of the deposited layer. In actual operation, in order to achieve this goal, multi-zone heating technology is usually adopted to achieve uniform control of the substrate surface temperature by precisely controlling the temperature of each heating zone. During the heating process, the temperature change of the substrate must be monitored in real time to ensure that the temperature of the entire deposition process is controlled within a predetermined range.

[0044] It is further explained that in the present invention, the heating parameters of the heating device are set between 900°C and 1800°C to ensure that the reaction gas on the surface of the silicon carbide ring substrate can be fully decomposed and evenly deposited. The preset temperature range is 1200°C to 1550°C. In addition, the heating device in the present invention is a resistance heating furnace, which belongs to the field of existing heating technology. Since the actual carbon emissions need to be controlled according to the region in the actual preparation process, the specific model of the resistance heating furnace is not described in detail in the present invention.

[0045] Step S400: introducing reaction gas into the reaction chamber, and at a preset temperature, the reaction gas decomposes and deposits on the surface of the silicon carbide ring substrate to form a basic silicon carbide ring, the bottom of which forms a notch matching the special-shaped boss.

[0046] It should be clarified that in the present invention, step S400 is used to achieve uniform deposition of silicon carbide film. When introducing the reaction gas, the flow rate and pressure of the gas must be precisely controlled to ensure that the reaction gas is evenly distributed on the substrate surface. It should be supplemented that in the present invention, the reaction gas is a mixture of silane gas and hydrogen, wherein silane gas is used as a carbon source and hydrogen is used as a carrier gas and a dilution gas to control the deposition rate and improve the deposition quality. The ratio of silane gas to hydrogen is in the range of 1:1 to 1:10 to ensure that the decomposition efficiency of the silane gas and the deposition rate during the deposition process reach an optimal balance. The flow rate of the mixed gas is 100 sccm to 500 sccm to ensure that the reaction gas is evenly distributed in the reaction chamber, thereby forming a uniform and dense silicon carbide layer on the surface of the silicon carbide ring substrate.

[0047] Step S500: Turn off the heating device, turn over the basic silicon carbide ring after the temperature drops, and fill the groove with additional filling material. The selection of the additional filling material is based on the use scenario of the silicon carbide ring.

[0048] It should be noted that, in the present invention, the additional filling material is any one of a ceramic material and a metal alloy.

[0049] Step S600: Apply a curing process to the base silicon carbide ring according to the type of the caulking material.

[0050] It should be clarified that in the present invention, the curing processes corresponding to the additional filling materials are sintering and electroplating respectively, wherein the filling ceramic material is tightly combined with the silicon carbide ring through sintering to form a uniform and dense structure, which is used to improve the high temperature resistance and corrosion resistance of the silicon carbide ring. The filling metal alloy is formed on the outside of the silicon carbide ring through an electroplating process. A layer of uniform metal alloy coating extending outward from the notch is formed outside the silicon carbide ring, which is used to improve the corrosion resistance and conductivity of the surface of the silicon carbide ring.

[0051] Specifically, in the present invention, when the ceramic material is tightly combined with the silicon carbide ring by sintering to form a uniform and dense structure, the parameters of the sintering process are carried out in a temperature range of 1200°C to 1500°C, and the holding time is adjusted according to the type and characteristics of the ceramic material, usually between 1 and 5 hours. For the electroplating process of the metal alloy, its parameters include current density, composition and temperature of the electroplating solution, and electroplating time. Specifically, the current density is between 1 and 10 amperes per square decimeter, the composition of the electroplating solution includes but is not limited to copper sulfate, nickel chloride or chromate, and the electroplating time is adjusted according to the required coating thickness, generally within the range of 1 to 5 hours. Through the electroplating process, it is ensured that the additional filling material is more firmly combined with the basic silicon carbide ring, thereby improving the stability and functionality of the overall structure.

[0052] Step S700: After the curing process is completed, the final silicon carbide ring is obtained through testing and surface treatment.

[0053] It should be clarified that step S700 is intended to ensure that the quality of the final silicon carbide ring meets the predetermined standards. Specifically, the inspection and surface treatment include dimensional accuracy inspection, surface roughness inspection and non-destructive inspection of the final silicon carbide ring to ensure that the product meets the quality requirements. Among them, the surface treatment involves polishing and cleaning steps, the purpose of which is to remove surface residues and improve the surface finish and performance of the silicon carbide ring. The standard for dimensional accuracy inspection is set to ±0.01mm, and the standard for surface roughness inspection is Ra≤0.1μm. Non-destructive inspection includes ultrasonic inspection and X-ray inspection, which are used to detect defects inside the silicon carbide ring.

[0054] In addition, the molding process of the silicon carbide ring also includes a heat treatment step to further improve its mechanical properties and durability. The heat treatment process involves placing the final silicon carbide ring in a high-temperature furnace and annealing it under nitrogen protection. The annealing temperature is controlled between 1600°C and 1900°C. The purpose is to eliminate the residual stress inside the material. The heat treatment process also includes slowly cooling the silicon carbide ring to prevent new stress from being generated due to rapid temperature changes. The slow cooling rate is controlled to reduce 50°C to 100°C per hour to ensure that the internal stress of the material is fully released.

[0055] It needs to be further clarified that in the present invention, the shape of the special-shaped boss matches the shape of the bottom of the groove to ensure that when the additional material is filled, the material can be evenly distributed in the groove to avoid the generation of gaps. The shape of the cross-section of the groove is trapezoidal or rectangular, which helps when the filling material is added, so that the filling material can fit closely to the shape of the groove, thereby enhancing the overall structural strength and stability of the silicon carbide ring.

[0056] In order to verify the effectiveness of the silicon carbide ring forming process in the present invention, the following comparative test was designed. First, three groups of silicon carbide ring samples were prepared, two of which were processed according to the process flow of the present invention, and the other group was processed using a traditional process as a control. Each group of samples included at least three replicates to ensure the reliability of the data.

[0057] It should be noted that, in the present invention, the specific implementation steps of the comparative test are as follows:

[0058] Step 1: Place the three groups of samples in a resistance heating furnace respectively, and set the heating parameters according to the present invention, that is, heat to between 900°C and 1800°C, with a preset temperature range of 1200°C to 1550°C. Record and compare the temperature distribution uniformity of the two groups of samples during the heating process.

[0059] Step 2: After reaching the preset temperature, introduce a mixture of silane gas and hydrogen gas with the same flow rate and pressure into the reaction chambers of the three groups of samples, that is, the flow rate is 100 sccm to 500 sccm, and the ratio of silane gas to hydrogen is 1:1 to 1:10. Observe and record the distribution of the reaction gas on the substrate surface and the uniformity of the deposited layer.

[0060] Step 3: After the deposition is completed, turn off the heating device. After the temperature drops, flip the three groups of samples and fill them with the same additional filling material. Record the ease of operation during the filling process and the structural stability after filling.

[0061] Step 4: Apply a curing process to the filled samples. For samples filled with ceramic materials, process them according to the sintering process parameters described in the present invention. For samples filled with metal alloys, process them according to the electroplating process parameters described in the present invention. Record the process parameters during the curing process and compare the curing effects of the three groups of samples.

[0062] Step 5: After the curing process is completed, the three groups of samples are tested for dimensional accuracy, surface roughness, and non-destructive testing. The test results are recorded and the quality differences of the three groups of samples are analyzed.

[0063] Step 6: Finally, the three groups of samples were heat treated with the annealing temperature controlled between 1600℃ and 1900℃ and slowly cooled. The temperature changes during the heat treatment process, as well as the mechanical properties and durability of the final samples were recorded.

[0064] Based on the above content, Table 1 is generated, and the actual test results of the three groups of samples are shown in Table 1.

[0065] Table 1

[0066] Test items Sample 1 of the present invention Sample 2 of the present invention Traditional method samples Dimensional accuracy ±0.05mm ±0.06mm ±0.12mm Mechanical properties Compressive strength: 320MPa Compressive strength: 315MPa Compressive strength: 240MPa Structural stability Stablize Stablize Unstable Heat treatment effect excellent excellent good Final Synthesis qualified qualified qualified

[0067] Based on the contents of Table 1, it can be seen that the sample 1 and sample 2 of the present invention are superior to the traditional method samples in terms of dimensional accuracy, mechanical properties, structural stability and heat treatment effect. Specifically, the dimensional accuracy of the sample 1 and sample 2 of the present invention reached ±0.05mm and ±0.06mm, respectively, which is much better than ±0.12mm of the traditional method sample. In terms of mechanical properties, the compressive strength of the sample 1 and sample 2 of the present invention reached 320MPa and 315MPa, respectively, while the traditional method sample was only 240MPa. In terms of structural stability, the sample 1 and sample 2 of the present invention both showed a stable state, while the traditional method sample was unstable. In terms of heat treatment effect, the sample 1 and sample 2 of the present invention were both rated as excellent, while the traditional method sample was only good. Comprehensively considered, the sample 1 and sample 2 of the present invention both met the qualified standards, and although the traditional method sample was also qualified, its performance index was significantly lower than that of the sample of the present invention, which shows that the silicon carbide ring forming process of the present invention has significant advantages in improving product performance and stability.

[0068] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is limited by the attached embodiments and their equivalents.

Claims

1. Silicon carbide ring forming process, characterized in that: include: The selected silicon carbide ring substrate is installed in the reaction chamber of the chemical vapor deposition equipment, wherein the silicon carbide ring substrate is ring-shaped and has a groove extending from the outer ring surface to the inner ring surface, and an integrally formed special-shaped boss is fixed at the bottom of the groove, and the height of the special-shaped boss does not exceed the depth of the groove; The furnace body of the chemical vapor deposition equipment defines the reaction chamber, and a heating device is provided on the furnace body, and the heating device is sleeved inside the silicon carbide ring substrate; Performing a vacuum treatment on the reaction chamber; Running a heating device to heat the reaction chamber to a preset temperature; A reaction gas is introduced into the reaction chamber, and the reaction gas is decomposed at a preset temperature and deposited on the surface of the silicon carbide ring substrate, and a basic silicon carbide ring is formed in the groove, and a notch matching the special-shaped boss is formed at the bottom of the basic silicon carbide ring; Turn off the heating device, turn over the basic silicon carbide ring after cooling down, and fill the groove with additional filling material. The additional filling material is added based on the usage scenario of the silicon carbide ring; Based on the type of filler material, a curing process is applied to the base silicon carbide ring; After the curing process is performed, the final silicon carbide ring is obtained after inspection and surface treatment.

2. The silicon carbide ring forming process according to claim 1, characterized in that: The shape of the special-shaped boss matches the shape of the bottom of the groove, so as to ensure that when the additional material is filled, the material can be evenly distributed in the groove to avoid the generation of gaps.

3. The silicon carbide ring forming process according to claim 1, characterized in that: The additional filling material is any one of a ceramic material and a metal alloy, and the curing processes corresponding to the additional filling material are sintering and electroplating respectively; The filling ceramic material is tightly combined with the silicon carbide ring by sintering to form a uniform and dense structure, which is used to improve the high temperature resistance and corrosion resistance of the silicon carbide ring; The filler metal alloy forms a uniform metal alloy coating extending outward from the groove on the outside of the silicon carbide ring through an electroplating process, so as to improve the corrosion resistance and conductivity of the surface of the silicon carbide ring.

4. The silicon carbide ring forming process according to claim 1, characterized in that: The cross-sectional shape of the groove is any one of a trapezoid and a rectangle, so that when the filling material is added, the filling material can closely fit the shape of the groove, thereby enhancing the overall structural strength and stability of the silicon carbide ring.

5. The silicon carbide ring forming process according to claim 1, characterized in that: The vacuum degree in the reaction chamber is not less than 10^-2Pa, which is used to remove oxygen and water vapor in the reaction chamber to ensure the purity of the deposition process. The heating parameters of the heating device are between 900°C and 1800°C, which are used to ensure that the reaction gas on the surface of the silicon carbide ring substrate can be fully decomposed and evenly deposited. The preset temperature is 1200°C to 1550°C.

6. The silicon carbide ring forming process according to claim 1, characterized in that: The reaction gas is a mixed gas of silane gas and hydrogen gas, wherein the silane gas is used as a carbon source and the hydrogen gas is used as a carrier gas and a diluent gas, which is used to control the deposition rate and improve the deposition quality; The ratio of the silane gas to the hydrogen gas is in the range of 1:1 to 1:10, which is used to ensure that the decomposition efficiency and deposition rate of the silane gas during the deposition process reach an optimal balance. The flow rate of the mixed gas is in the range of 100 sccm to 500 sccm, which is used to ensure that the reaction gas is evenly distributed in the reaction chamber, thereby forming a uniform and dense silicon carbide layer on the surface of the silicon carbide ring substrate.

7. The silicon carbide ring forming process according to claim 1, characterized in that: Inspection and surface treatment include dimensional accuracy inspection, surface roughness inspection and non-destructive testing of the final silicon carbide ring to ensure that the product meets quality standards. Surface treatment involves polishing and cleaning to remove surface residues and improve the surface finish and performance of the silicon carbide ring. The standard for dimensional accuracy detection is ±0.01 mm, the standard for surface roughness detection is Ra≤0.1 μm, and non-destructive testing includes ultrasonic testing and X-ray testing, which are used to detect internal defects of the silicon carbide ring.

8. The silicon carbide ring forming process according to claim 1, characterized in that: The silicon carbide ring forming process also includes heat treatment of the final silicon carbide ring to further improve its mechanical properties and durability. The heat treatment process includes placing the final silicon carbide ring in a high-temperature furnace and annealing it under nitrogen protection. The annealing temperature is controlled between 1600°C and 1900°C to eliminate residual stress inside the material.

9. The silicon carbide ring forming process according to claim 8, characterized in that: The heat treatment process also includes slowly cooling the silicon carbide ring to prevent new stress from being generated due to rapid temperature changes. The slow cooling rate is controlled to decrease by 50°C to 100°C per hour to ensure that the internal stress of the material is fully released.

10. A silicon carbide ring for plasma etching equipment, characterized in that: The silicon carbide ring forming process described in any one of claims 1 to 9 is used.

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