Ceramic base

Abstract

The invention relates to a ceramic base. The ceramic susceptor according to the present invention comprises: an insulating plate on which an electrode is disposed; a shaft connected to the insulating plate; and a power supply rod connected to the electrode and extending through an inner space of the shaft, the insulating plate including a first through flow path penetrating between an upper surface and a lower surface to communicate with the inner space of the shaft.

Description

Technical Field

[0001] The invention relates to a ceramic base, in particular to a ceramic base which realizes air pumping through the inner space of a shaft. Background Art

[0002] Typically, a semiconductor device or display device is manufactured by stacking multiple thin film layers including a dielectric layer and a metal layer in sequence on a glass substrate, a flexible substrate or a semiconductor wafer substrate and then patterning them. These multiple thin film layers are deposited on the substrate in sequence by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. As the CVD process, there are low pressure chemical vapor deposition (LPCVD) process, plasma enhanced chemical vapor deposition (PECVD) process, metal organic chemical vapor deposition (MOCVD) process, etc.

[0003] Such CVD apparatus and PVD apparatus are equipped with a ceramic susceptor for supporting and heat treating glass substrates, flexible substrates, semiconductor wafer substrates, etc. The ceramic susceptor can be provided in the CVD apparatus and PVD apparatus so as to be used for heating the substrate in a heat treatment process, etc. In addition, the ceramic susceptor is provided with a high-frequency (RF) electrode and can also be used to form plasma in an etching process, etc., of a plurality of thin film layers formed on a semiconductor wafer substrate.

[0004] Figure 1A This is a schematic cross-sectional view of a conventional ceramic base.

[0005] First, if Figure 1A As shown, the existing ceramic base includes an insulating plate 10 combined with a shaft 20, and the insulating plate 10 includes a heating element 12 in a grid shape or the like arranged in a ceramic material, and the heating element 12 is connected to a connecting rod 22 to receive power through a power source outside the mounting member 30. In addition, the existing ceramic base pumps air through a flow path 31 that penetrates the insulating plate 10, the shaft 20, and the mounting member 30, so as to fix a substrate 11 such as a semiconductor wafer by a vacuum chuck function in a semiconductor process. In particular, the flow path 31 is formed inside the side wall in the length direction of the shaft 20. However, in the existing ceramic base, it is difficult to align the flow path 31 in the process of joining the insulating plate 10, the shaft 20, and the mounting member 30 after they are separately manufactured. Therefore, in order to manufacture the existing ceramic base, the yield may be reduced, and there is a problem that the processing cost may increase.

[0006] In addition, this conventional ceramic base requires the manufacture of a shaft 20 with a large cross-sectional area in order to process the through-flow path 31 of the side wall of the shaft 20, thus causing a problem of increased heat loss. Figure 1B and Figure 1C As shown, the heating element 12 and the high-frequency electrode (not shown) arranged other than the heating element 12 need to be formed in a curved manner so that the flow path 31 on the side wall of the shaft 20 avoids the hole 33 on the upper surface of the insulating plate 10 having the groove 15. Therefore, there are also problems of heat loss and reduced temperature uniformity in the surrounding area AA.

[0007] As relevant existing documents, you can refer to patent application No. 10-2009-0020821 (application date is March 11, 2009), patent application No. 10-2017-0168278 (application date is December 8, 2017) and international patent publication No. WO1999 / 56307 (publication date is November 4, 1999), etc. Summary of the invention

[0008] Problem that the invention aims to solve

[0009] Therefore, the present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a ceramic base that can realize air pumping through the internal space of the shaft to facilitate the alignment and joining of multiple components, thereby improving the yield and reducing the processing cost. Through this, the vacuum chuck function and the purge function can be realized, and this vacuum chuck / purge function can also be used simultaneously with the electrostatic chuck.

[0010] Furthermore, a ceramic base is provided, and a connecting rod for supplying power to the inner space of the shaft can be made of one material without an intermediate layer (KOVAR) for oxidation resistance, thereby reducing electrical resistance and reducing the influence of shear stress.

[0011] Means used to solve problems

[0012] First, summarizing the features of the present invention, a ceramic base according to one aspect of the present invention for achieving the above-mentioned purpose includes: an insulating plate, provided with an electrode, a shaft, one end of the shaft being connected to the insulating plate, a power supply rod, connected to the electrode and extending through the internal space of the shaft, and a separator, coupled to the other end of the shaft and sealing the internal space of the shaft; the insulating plate includes a first through flow path extending between the upper surface and the lower surface of the insulating plate to communicate with the internal space of the shaft, and the ceramic base is capable of using the first through flow path to perform a vacuum chuck function and / or a purge function.

[0013] The ceramic base may further include a mounting member connected to a lower portion of the shaft and including a second through-flow path communicating an inner space of the shaft with an outside.

[0014] The first through flow channel may be maintained at a negative pressure lower than the atmospheric pressure so as to adsorb the substrate disposed on the upper portion of the insulating plate.

[0015] The first through-flow path may be maintained at a positive pressure higher than atmospheric pressure to perform a purge function.

[0016] The electrode may be a heating element, and the ceramic base may further include a plasma generating electrode disposed in the insulating plate so as to be spaced apart from the electrode.

[0017] The insulating plate may include an electrode configured to be spaced apart from the electrode and to clamp and release the clamping of a substrate configured on the upper portion of the insulating plate. While using the electrode to clamp and release the clamping of the substrate configured on the upper portion of the insulating plate to keep the substrate clamped, a positive pressure higher than atmospheric pressure can be maintained through the first through flow path to simultaneously perform a purge function.

[0018] The ceramic base may further include a connector embedded in the insulating plate and electrically connected to the electrode; and the power supply rod may be brazed-joined to the connector through a conductive filler.

[0019] The power supply rod may be a single rod, and the power supply rod may be connected to the connector and extend through the inner space of the shaft and the mounting member of the lower portion of the shaft.

[0020] The material of the connector may be the same as that of the power supply bar.

[0021] The electrode may be a heating element, an electrode for plasma generation, or a chuck electrode for an electrostatic chuck function.

[0022] The electrode may be a heating element, and the ceramic base may further include a chuck electrode which is disposed in the insulating plate in a manner spaced apart from the electrode and used for an electrostatic chuck function.

[0023] When the first through-channel is used to perform a vacuum chuck function, the electrode can also be used to perform an electrostatic chuck function.

[0024] Effects of the Invention

[0025] According to the ceramic base of the present invention, air pumping for clamping the substrate can be achieved through the internal space of the shaft, so that the alignment and joining of multiple components become easy, thereby having the advantages of improving yield and reducing processing costs.

[0026] In addition, the present invention does not need to process a through hole on the side wall of the shaft, so that the cross-sectional area of ​​the shaft can be formed small, thereby reducing heat loss compared to the prior art, and since the through flow path on the center side can be used to achieve the clamping or purging function, it is not necessary to form the built-in heating element or electrode in a curved form in order to avoid the through flow path on the center side, thus, compared to the prior art, the area around the through flow path ( Figure 2C The effect of improving temperature uniformity in BB).

[0027] Furthermore, since the connecting rod for supplying power to the inner space of the shaft can be made of one material without an intermediate layer (KOVAR) for buffering stress, the resistance of the connecting rod can be reduced, and the occurrence of cracks or arching caused by shear stress can be reduced.

[0028] In addition, the vacuum chuck function is realized by using the internal space on the center side of the shaft, and the electrostatic chuck function is used simultaneously through the chuck electrode, so that when the clamping force of the vacuum chuck function is weak under the low-pressure atmosphere in the semiconductor process chamber, the clamping force is supplemented by the electrostatic chuck electrode, and when the clamping force by the electrostatic chuck electrode is weak under the high-temperature atmosphere in the semiconductor process chamber, the clamping force is supplemented by the vacuum chuck function, and the thermal conductivity of the shaft can be reduced by the vacuum in the internal space of the shaft at high temperature (vacuum reduces thermal conductivity), and the oxidation problem of the power supply rod on the inside of the shaft can be reduced (vacuum also reduces oxidation problems). BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings, which are a part of the detailed description to help understand the present invention, provide embodiments of the present invention and, together with the detailed description, explain the technical concept of the present invention.

[0030] Figure 1A This is a schematic cross-sectional view of a conventional ceramic base.

[0031] Figure 1B Observed from above Figure 1A Example of a heating element pattern when using a ceramic base.

[0032] Figure 1C is shown as viewed from above Figure 1A This is a diagram showing the overlap of the upper surface of the insulating plate and the heating element below it when the ceramic base is mounted.

[0033] Figure 2A FIG. 1 is a schematic cross-sectional view of a ceramic base according to an embodiment of the present invention.

[0034] Figure 2B Observed from above Figure 2A Example of a heating element pattern when using a ceramic base.

[0035] Figure 2C is shown as viewed from above Figure 2A This is a diagram showing the overlap of the upper surface of the insulating plate and the heating element below it when the ceramic base is mounted.

[0036] Figure 3 FIG. 1 is a cross-sectional view of a connecting rod coupling portion of a first embodiment of a ceramic base according to the present invention.

[0037] Figure 4 FIG. 4 is a cross-sectional view of a connecting rod coupling portion of a second embodiment of a ceramic base according to the present invention.

[0038] Description of Reference Numerals

[0039] 110: Insulation plate 112: Electrode

[0040] 114: Heating element 120: Shaft

[0041] 121, 122: Connecting rod 91: First through-flow passage

[0042] 92: Second through-flow path DETAILED DESCRIPTION

[0043] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, the same components in each drawing are represented by the same figure marks as much as possible. In addition, the description of known functions and / or structures will be omitted. The content disclosed below will mainly describe the parts required for understanding the operation of various embodiments, and omit the description of elements that may obscure the main purpose of the description. In addition, some of the components in the drawings may be enlarged, omitted or schematically shown. The size of each component cannot fully reflect the actual size, and therefore, the content recorded here is not limited by the relative size or spacing of the components shown in each drawing.

[0044] When describing the embodiments of the present invention, if it is judged that the specific description of the known technology related to the present invention unnecessarily obscures the main idea of ​​the present invention, its detailed description will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and may vary according to the intentions or precedents of the user or operator. Therefore, their definition should be based on the content of the entire specification. The terms used in this specification are used only to illustrate the embodiments of the present invention and are not intended to be limiting. Unless otherwise specified, singular expressions shall include plural expressions. Expressions such as "including" or "having" in this specification are used to refer to any feature, number, step, action, component or combination thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, components or combinations thereof.

[0045] In addition, although the terms "first" and "second" may be used to describe various components, the components are not limited to the terms, and the terms are only used to distinguish one component from another.

[0046] Figure 2A FIG. 1 is a schematic cross-sectional view of a ceramic base according to an embodiment of the present invention.

[0047] First, refer to Figure 2A According to an embodiment of the present invention, the ceramic base 100 includes an insulating plate 110, a shaft 120 and a mount 140. The insulating plate 110, the shaft 120 and the mount 140 are connected in sequence, and an isolation plate 130 may be included between the shaft 120 and the mount 140. The isolation plate 130 is formed at the ends of the shaft 120 in the length direction to isolate the internal spaces from each other.

[0048] The ceramic susceptor 100 according to an embodiment of the present invention has a vacuum chuck structure that supports a substrate 11 as a processing object for various purposes, such as a semiconductor wafer, a glass substrate, a flexible substrate, etc., using an air pump 500 .

[0049] To this end, the insulating plate 110 is configured to configure (embed) the heating element (electrode) 114 between the ceramic materials, and depending on the situation, it can also be configured so that the other electrodes 112 are separated from the heating element 114 and configured (embedded) at a predetermined interval. The insulating plate 110 is configured to stably support the substrate as a processing object while enabling various semiconductor processes, such as heating using the heating element 114 and (or) supporting the substrate using the electrode 112, or a plasma enhanced chemical vapor deposition process or a dry etching process using plasma. The insulating plate 110 can be formed into a plate-like structure having a predetermined shape. As an example, the insulating plate 110 can be formed into a circular plate-like structure, but is not necessarily limited to this. Among them, the ceramic material can be Al 2 O 3 , Y 2 O 3 、Al 2 O 3 / Y 2 O 3 、ZrO 2 、Autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO 2 、TiO 2 , B x C y , BN, SiO 2 、SiC、YAG、Mullite、AlF 3At least one material in the ceramic material may be aluminum nitride (AlN). In addition, the insulating plate 110 may be formed by molding and sintering the powder of the ceramic material, and each ceramic powder used therefor may include an yttrium oxide powder content of about 0.1% to 10%, preferably about 1% to 5%.

[0050] The heating element (electrode) 114 can be formed into a plate-like coil shape or a flat plate shape by a heating wire (or a resistance wire). In addition, the heating element 114 can be formed into a multilayer structure for precise temperature control. This heating element 114 is connected to a power source to be provided to a separate heating element 114 through connecting rods 121 and 122 to achieve power supply, and can perform the function of heating the substrate 11 as a processing object on the insulating plate 110 to a predetermined temperature in the semiconductor process, so as to perform the heating or deposition process and etching process of the substrate. The connecting rods 121 and 122 extend to the outside through the internal space of the shaft 120, through the isolation plate 130, through the mounting member 140.

[0051] The electrode 112 may be made of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride or an alloy thereof, preferably, may be made of molybdenum. The electrode 112 may be connected to a power supply terminal (e.g., ground) through another connecting rod (not shown). The connecting rod (not shown) for the electrode 112 may also extend to pass through the internal space of the shaft 120, penetrate the isolation plate 130, penetrate the mounting member 140 and extend to the outside. For example, the electrode 112 is used as a chuck electrode for an electrostatic chuck function for supporting the substrate 11 placed on the insulating plate 110, or may also be used as a plasma generation electrode for a plasma generation function for processes such as plasma enhanced chemical vapor deposition or dry etching in a reactive ion etching (RIE) device.

[0052] The shaft 120 is in the shape of a pipe having a through hole and is coupled to the lower surface of the insulating plate 110. The shaft 120 may be formed of the same ceramic material as the insulating plate 110 and coupled thereto. The ceramic material may be Al 2 O 3 , Y 2 O 3 、Al 2 O 3 / Y 2 O 3 、ZrO 2 、Autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO 2 、TiO2 , B x C y , BN, SiO 2 、SiC、YAG、Mullite、AlF 3 At least one material in the ceramic material may be aluminum nitride. In addition, the shaft 120 may be formed by molding and sintering the powder of the ceramic material, and each ceramic powder used therefor may include an yttrium oxide powder content of about 0.1% to 10%, preferably about 1% to 5%.

[0053] The shaft 120 can be combined with the insulating plate 110 by a bonding material such as ceramic paste. Depending on the situation, the shaft 120 can also be mechanically combined with the insulating plate 110 using bolts, nuts, etc. The internal space through the shaft 120 accommodates various connecting rods 121, 122, etc. for supplying power to the electrode 112 and (or) the heating element 114, and each rod is extended to penetrate the mounting member 140 of a closed shape (e.g., a rigid body or a member having a hollow space) on the outside and extend to the outside.

[0054] like Figure 2A As shown, the mounting member 140 is connected to the end of the shaft 120 in the length direction. The mounting member 140 can be mechanically combined with the shaft 120 via the isolation plate 130, which is formed at the end of the shaft 120 in the length direction. The connection between the shaft 120 and the isolation plate 130 can be achieved by using bolts, nuts, etc. in a mechanical combination. In addition, the connection between the shaft 120, the isolation plate 130 and the upper part of the mounting member 140 can also be achieved by using bolts, nuts, etc. in a mechanical combination, and can be sealed to achieve complete sealing. The periphery of the through hole of the isolation plate 130 for the connecting rods 121, 122, etc. that penetrate the isolation plate 130 can be sealed by a paste of a ceramic material as described above, etc., so that there is no gap. The upper part of the mounting member 140 can be tightened in a manner surrounding the periphery of the isolation plate 130. The upper portion of the mounting member 140 and the isolation plate 130 or the upper portion of the mounting member 140 and the shaft 120, that is, the combined portion of the shaft 120 with the isolation plate 130 and the mounting member 140 may be sealed by a paste of ceramic material as described above, etc., so as to have no gap.

[0055] The mounting member 140 and the isolation plate 130 may be made of a metal material such as aluminum (Al), or may be made of a ceramic material as described above. 2 O 3 , Y 2 O 3 、Al 2 O 3 / Y 2 O 3 、ZrO2 、Autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO 2 、TiO 2 , B x C y , BN, SiO 2 、SiC、YAG、Mullite、AlF 3 At least one material in the ceramic material may be aluminum nitride. In addition, the shaft 120 may be formed by molding and sintering the powder of the ceramic material, and each ceramic powder used therefor may include an yttrium oxide powder content of about 0.1% to 10%, preferably about 1% to 5%.

[0056] According to the ceramic base 100 of one embodiment of the present invention, air pumping is achieved through the internal space of the shaft 120 to act as a vacuum chuck, so that the alignment and joining of the air flow path for aligning the components such as the insulating plate 110, the shaft 120 and the mounting member 140 can be facilitated, thereby improving the yield and reducing the processing cost. In addition, in the present invention, by maintaining the internal space of the shaft 120 as a vacuum lower than the atmospheric pressure (negative pressure), the oxidation of the connecting rods 121 and 122 in the internal space of the shaft 120 is prevented, so that the connecting rods 121 and 122 can be implemented as a single rod instead of a double connection structure (first rod 51 and second rod 52) (refer to Figure 3 ), and the material of the connecting rods 121, 122 can be electrically connected to the connector 41 (refer to Figure 3 and Figure 4 ) is made of molybdenum. That is, by making the connecting rods 121, 122 made of a material such as molybdenum, there is no need for an intermediate layer (first rod 51) (KOVAR) for buffering stress (refer to Figure 3 ), thereby reducing the resistance of the connecting rods 121, 122 and reducing the occurrence of cracks or arches caused by shear stress.

[0057] In addition, the ceramic susceptor 100 according to an embodiment of the present invention can realize a vacuum chuck function using the inner space of the shaft 120 and can simultaneously realize an electrostatic chuck function through the electrode 112 serving as a chuck electrode.

[0058] To this end, the insulating plate 110 includes a first through-flow path 91 for communicating from the upper surface on which the substrate 11 is placed to the inner space of the shaft 120, so as to achieve air pumping through the inner space of the shaft 120, thereby playing the role of a vacuum chuck. The first through-flow path 91 is formed to penetrate between the upper surface and the lower surface near the center of the insulating plate 110, and communicates between the upper surface on which the substrate 11 is placed and the inner space of the shaft 120, so that the fluid flows through the first through-flow path 91. In addition, the mounting member 140 includes a second through-flow path 92 for communicating the inner space of the shaft 120 with the outside, so as to achieve air pumping (vacuum pumping) through the inner space of the shaft 120, thereby playing the role of a vacuum chuck. If the air pump 500 is connected to the second through-flow path 92 to perform the air pumping operation, air pumping is achieved through the first through-flow path 91, the internal space of the shaft 120, and the second through-flow path 92, so that the internal space of the shaft 120 and the first through-flow path 91 maintain a negative pressure lower than the atmospheric pressure, thereby being able to adsorb the substrate 11 disposed on the upper portion of the insulating plate 110. As described above, when the vacuum chuck function is performed using the first through-flow path 91, the electrostatic chuck function can also be performed by using the electrode 112 as an electrostatic chuck electrode. When the electrostatic chuck function is used together with the vacuum chuck function using the first through flow path 91 and the electrode 112 serving as the electrostatic chuck electrode is used to receive power for chucking and unchucking, when the chucking force of the vacuum chuck function is weak under the low-pressure atmosphere in the semiconductor process chamber, the chucking force can be supplemented by the electrode 112 serving as the electrostatic chuck electrode, and when the chucking force of the electrode 112 serving as the electrostatic chuck electrode is weak under the high-temperature atmosphere in the semiconductor process chamber, not only can the chucking force be supplemented by the vacuum chuck function, but the thermal conductivity of the shaft 120 can also be reduced by the vacuum in the internal space of the shaft 120 at high temperature (vacuum reduces thermal conductivity), and the oxidation problem of the power supply rod inside the shaft 120 can also be reduced (vacuum also reduces oxidation problems).

[0059] The interior of the mounting member 140 may be in the form of a hard rigid body, or may be in the form of a member having a hollow space. When the mounting member 140 is a rigid body, the mounting member 140 may be provided with a through hole for passing the connecting rods 121 and 122 and a through hole for forming the second through flow path 92. In addition, if the mounting member 140 is in the form of a member having a hollow space, the through hole for passing the connecting rods 121 and 122 may be provided in a through manner between the upper end and the lower end of the mounting member 140, and a tubular member (e.g., a metal or ceramic material) for the second through flow path 92 may be provided between the upper end and the lower end of the mounting member 140.

[0060] Figure 2B Observed from above Figure 2A An example of a pattern of the heat generating element 114 when the ceramic base 100 is used.

[0061] Figure 2C is shown as viewed from above Figure 2A FIG. 1 is a diagram showing a ceramic base 100 in which the upper surface of the insulating plate 110 and the heating element 114 thereunder overlap.

[0062] Reference Figure 2B and Figure 2C The ceramic base 100 of the present invention does not need to be processed with a through hole on the side wall of the shaft 120, so that the cross-sectional area of ​​the shaft 120 can be formed small. Therefore, in the ceramic base 100 of the present invention, compared with the prior art (refer to Figure 1A , Figure 1B , Figure 1C ), heat loss can be reduced, and since the first through-flow path 91 on the central side can be used to achieve the clamping or purging function, it is not necessary to form the built-in heating element 114 or the electrode 112 in a curved form in order to avoid the through-flow path on the central side. Therefore, compared with the prior art, the area around the first through-flow path 91 ( Figure 2C The effect of improving temperature uniformity in BB).

[0063] The ceramic base 100 of the present invention as described above is disposed in the chamber of a CVD device and a PVD device, and thus can be used for heating using a heating element 114 and (or) supporting a substrate using an electrode 112, or a plasma enhanced chemical vapor deposition process or a dry etching process using plasma, etc. As described above, the ceramic base 100 of the present invention can realize clamping and unclamping of the substrate 11 by using negative pressure air pumping through the first through-flow path 91, the internal space of the shaft 120, and the second through-flow path 92, and at this time, the insulating plate 110 is configured to stably support the substrate as a processing object, while realizing various semiconductor processes such as heating using a heating element 114 and (or) supporting a substrate using an electrode 112, or a plasma enhanced chemical vapor deposition process or a dry etching process using plasma.

[0064] In addition, the ceramic base 100 of the present invention not only performs clamping and unclamping of the substrate 11 using the first through-flow path 91, etc., but also performs a purge function by pumping positive pressure air through the first through-flow path 91, the internal space of the shaft 120, and the second through-flow path 92 to keep the first through-flow path 91 at a pressure higher than the atmospheric pressure. At this time, the air pump 500 can perform pumping to inject air at a predetermined pressure higher than the atmospheric pressure through the second through-flow path 92.

[0065] For example, a purge function can be performed by blowing air containing a predetermined gas (for example, nitrogen or an inert gas (He, Ar, etc.)) into the chamber of the above-mentioned CVD device and PVD device through the first through-flow path 91 by positive pressure air pumping.

[0066] This can be done by blowing away and removing the bag-like objects accumulated on the upper surface of the insulating plate 110 in the chamber, especially the particles in the grooves 15, etc. Preferably, this purging function is performed after the substrate 11 is clamped on the upper surface of the insulating plate 110, however, it can also be performed when there is no substrate 11 on the upper surface of the insulating plate 110 as required. However, when performing this purging function, in addition to the heating element 114, the electrodes arranged in the insulating plate 110, i.e., Figure 2A The electrode 112 can also be used for clamping and unclamping the substrate 11 placed on the upper surface of the insulating plate 110. That is, the electrode 112 can be a high-frequency electrode configured to receive a power source for plasma generation as described above, but can also be an electrostatic chuck electrode (or chuck electrode) configured to receive a power source for clamping and unclamping the substrate 11. In addition, the electrode 112 can also remain as it is to play the role of an electrostatic chuck electrode, and be formed with an additional chuck electrode, which is configured to be spaced a predetermined distance from the electrode 112 to additionally receive a power source for clamping and unclamping the substrate 11. That is, the heating element 114, the electrode 112, and the additional electrode for clamping and unclamping the substrate 11 can also be formed in different layers from each other in the insulating plate 110 in a manner spaced a predetermined distance apart.

[0067] Figure 3 FIG. 1 is a cross-sectional view of a connection portion of connection bars 121 and 122 of a first embodiment of a ceramic base 100 according to the present invention.

[0068] Reference Figure 3 The connecting rods 121 and 122 can be electrically connected to the connector 41 embedded in a manner electrically connected to the heating element 114 (or electrode 112) of the insulating plate 110. The connecting rods 121 and 122 are composed of a double connection structure, that is, a first rod 51 and a second rod 52, through a support eyelet 70 engaged with a thread formed on a part of the inner circumference of a predetermined opening of the insulating plate 110.

[0069] The connector 41, the connecting rods 121, 122 and the supporting eyelet 70 may be made of conductive materials, for example, tungsten, molybdenum, silver, nickel (Ni), gold, niobium, titanium or alloys thereof. In particular, in the double connection structure of the connecting rods 121, 122, the connector 41 may be made of molybdenum, the first rod 51 as an intermediate layer for buffering stress is made of Kovar (Fe-Ni-Co alloy) material, and the second rod 52 is made of nickel or the like. In addition, the connecting rods 121, 122 may be combined with the connector 41 by brazing. For example, the conductive filler 50 is injected around the exposed portion of the connector 41 in advance, and the first rod 51 is pushed into the inner side of the supporting eyelet 70 so that the end surface of one side of the first rod 51 is closely attached to the connector 41, and then combined by high-temperature heating and cooling, so that electrical connection can be achieved. Next, the second conductive filler is fully injected into the upper part of the other end surface of the first rod 51, and the one end surface of the second rod 52 is tightly attached to the injected second conductive filler, and then combined by high-temperature heating and cooling, so as to achieve electrical connection.

[0070] Although the coupling portion of the connecting rods 121, 122 can be realized in this manner, in the present invention, oxidation of the connecting rods 121, 122 in the internal space of the shaft 120 is prevented by maintaining the internal space of the shaft 120 as a vacuum below atmospheric pressure, and therefore the connector 41 and the single-rod connecting rods 121, 122 can also be formed of molybdenum.

[0071] Figure 4 FIG. 1 is a cross-sectional view of a connection portion of connection rods 121 and 122 according to a second embodiment of a ceramic base of the present invention.

[0072] Reference Figure 4 The connecting rods 121 and 122 can be electrically connected to the connector 41 embedded in a manner electrically connected to the heating element 114 (or electrode 112) of the insulating plate 110. The connecting rods 121 and 122 are composed of a single-rod connection structure through the support eyelet 70 coupled with a thread formed on a portion of the inner circumference of the predetermined opening of the insulating plate 110.

[0073] The connector 41 , the connecting rods 121 , 122 and the supporting eyelet 70 may be made of conductive materials, for example, tungsten, molybdenum, silver, nickel, gold, niobium, titanium or alloys thereof.

[0074] In particular, in the present invention, the oxidation of the connecting rods 121, 122 in the inner space of the shaft 120 is prevented by maintaining the inner space of the shaft 120 as a vacuum below the atmospheric pressure, so that the connecting rods 121, 122 can be implemented as a single rod instead of as Figure 3The double connection structure (first rod 51 and second rod 52) shown in the figure, and the material of the connection rods 121, 122 can be the same as the material of the connector 41 electrically connected to the heating element 114 (or electrode 112) of the insulating plate 110, which is formed of molybdenum. That is, by making the connection rods 121, 122 can be made of a material such as molybdenum without Figure 3 The intermediate layer (first rod 51) (KOVAR) for buffering stress can reduce the resistance of the connecting rods 121, 122 and reduce the occurrence of cracks or arches caused by shear stress.

[0075] The connecting rods 121 and 122 can be connected to the connector 41 by soldering. For example, the conductive filler 50 is injected around the exposed portion of the connector 41 in advance, and the connecting rods 121 and 122 are pushed into the inner side of the supporting hole 70 so that the end surface of one side of the connecting rods 121 and 122 is closely attached to the connector 41, and then they are connected by high-temperature heating and cooling, so that electrical connection can be achieved.

[0076] As described above, according to the ceramic base 100 of the present invention, air pumping for clamping the substrate can be realized through the internal space of the shaft 120, so that the alignment and joining of multiple components become easy, thereby having the advantages of improving yield and reducing processing costs. In addition, the present invention does not need to process a through hole in the side wall of the shaft, so that the cross-sectional area of ​​the shaft can be formed small, so compared with the prior art, heat loss can be reduced, and since the first through flow path 91 on the center side can be used to achieve the clamping or purging function, it is not necessary to form the built-in heating element or electrode in a curved form in order to avoid the through flow path on the center side, so compared with the prior art, it has the effect of improving the temperature uniformity in the area BB around the first through flow path 91.

[0077] In addition, since the connecting rods 121, 122 for power supply in the internal space of the shaft can be made of one material without an intermediate layer (first rod 51) (KOVAR) for buffering stress, the resistance of the connecting rods 121, 122 can be reduced and the occurrence of cracks or arching caused by shear stress can be reduced.

[0078] Furthermore, the ceramic susceptor 100 according to an embodiment of the present invention can realize a vacuum chuck function by using the inner space of the shaft 120 and can also simultaneously realize an electrostatic chuck function by using the electrode 112 as a chuck electrode.

[0079] As described above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is only provided to help understand the present invention as a whole, and the present invention is not limited to the embodiments, and ordinary technicians in the field to which the present invention belongs can make various modifications and changes within the scope of the essential features of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments, and the attached claims and all technical ideas that are equivalent to or equivalent to the claims should be interpreted as included in the scope of the rights of the present invention.

Claims

1. A ceramic base, wherein: include: An insulating plate, provided with electrodes, a shaft, one end of which is connected to the insulating plate, a power supply rod connected to the electrode and extending through the interior space of the shaft, and a separation plate coupled to the other end of the shaft and sealing an inner space of the shaft; The insulating plate includes a first through flow path penetrating between an upper surface and a lower surface of the insulating plate to communicate with an inner space of the shaft, The ceramic susceptor can perform a vacuum chuck function and / or a purge function using the first through-flow passage.

2. The ceramic susceptor according to claim 1, wherein: Also includes: A mounting member is connected to a lower portion of the shaft and includes a second through-flow path that allows the inner space of the shaft to communicate with the outside.

3. The ceramic susceptor according to claim 1, wherein: The first through-channel is maintained at a negative pressure lower than the atmospheric pressure so as to adsorb the substrate disposed on the upper portion of the insulating plate.

4. The ceramic susceptor according to claim 1, wherein: The first through-flow path is maintained at a positive pressure higher than atmospheric pressure to perform a purge function.

5. The ceramic susceptor according to claim 1, wherein: The electrode is a heating element. The ceramic susceptor further includes a plasma generating electrode disposed in the insulating plate so as to be spaced apart from the electrode.

6. The ceramic susceptor according to claim 1, wherein: The insulating plate includes an electrode that is spaced apart from the electrode and that clamps and releases the substrate that is disposed on an upper portion of the insulating plate. While the substrate disposed on the upper portion of the insulating plate is held in chuck using an electrode for chuck and unclamping the substrate, a positive pressure higher than atmospheric pressure is maintained through the first through-flow passage to simultaneously perform a purge function.

7. The ceramic susceptor according to claim 1, wherein: Also includes: a connector embedded in the insulating plate and electrically connected to the electrode; The power supply rod is brazed and joined to the connector via a conductive filler.

8. The ceramic susceptor according to claim 7, wherein: The power supply rod is a single rod connected to the connector and extending through the inner space of the shaft and the mounting piece at the lower portion of the shaft.

9. The ceramic susceptor according to claim 7, wherein: The material of the connector is the same as that of the power supply bar.

10. The ceramic susceptor according to claim 1, wherein: The electrode is a heating element, an electrode for plasma generation, or a chuck electrode for an electrostatic chuck function.

11. The ceramic susceptor according to claim 1, wherein: The electrode is a heating element. The ceramic base further includes a chuck electrode disposed in the insulating plate in a manner spaced apart from the electrode and used for an electrostatic chuck function.

12. The ceramic susceptor according to claim 1, wherein: When the first through-channel is used to perform a vacuum chuck function, the electrode can also be used to perform an electrostatic chuck function.

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