A liquid flow rate calibration method, device, and electronic device for a semiconductor device

Abstract

The present invention discloses a method, device and electronic device for liquid flow rate verification of a semiconductor device. The liquid flow rate verification method includes: obtaining the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after maintaining a first preset duration when the carrier gas flow rate is equal to a preset carrier gas flow rate; obtaining multiple times the change value of the mixed gas pressure in the vacuum chamber corresponding to the mixed gas flow rate after maintaining a first preset duration when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to a preset liquid flow rate; determining the change value of the vacuum chamber pressure corresponding to each liquid flow rate according to the change value of the carrier gas pressure in the vacuum chamber and each change value of the mixed gas pressure in the vacuum chamber; and verifying the liquid flow rate of the semiconductor device according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate. The present invention improves the verification accuracy of the liquid flow rate output by the liquid flow rate controller.

Description

Technical Field

[0001] The present invention relates to the technical field of liquid flow calibration, and particularly to a liquid flow calibration method, device and electronic device for a semiconductor device. Background Art

[0002] When generating a required thin film through a chemical vapor deposition process, the gas flow rate has an important impact on process control and thin film quality. Therefore, precise control of the gas flow rate is required during the chemical vapor deposition process. The chemical vapor deposition process usually requires a mass flow controller and a liquid flow controller to precisely control the gas flow rate. When performing maintenance and troubleshooting, it is necessary to calibrate the accuracy of the mass flow controller and the liquid flow controller.

[0003] In the prior art, for the calibration of the liquid flow controller, it generally relies on factory calibration, but the calibration accuracy is low, which affects the uniformity and quality in the semiconductor manufacturing process. Summary of the Invention

[0004] The present invention provides a liquid flow calibration method, device and electronic device for a semiconductor device to improve the calibration accuracy of the liquid flow rate output by the liquid flow controller.

[0005] According to one aspect of the present invention, there is provided a liquid flow calibration method for a semiconductor device, the liquid flow calibration method comprising:

[0006] Obtaining the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after maintaining a first preset duration when the carrier gas flow rate is equal to a preset carrier gas flow rate; wherein, the carrier gas flow rate is the flow rate output by the mass flow controller;

[0007] Obtaining multiple times the change value of the mixed gas pressure in the vacuum chamber corresponding to the mixed gas flow rate after maintaining a first preset duration when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to a preset liquid flow rate; wherein, the mixed gas flow rate is the flow rate of the mixed gas of the carrier gas and the vaporized liquid; the liquid flow rate is the flow rate output by the liquid flow controller;

[0008] Determining the change value of the vacuum chamber pressure corresponding to each liquid flow rate according to the change value of the carrier gas pressure in the vacuum chamber and each change value of the mixed gas pressure in the vacuum chamber;

[0009] Calibrating the liquid flow rate of the semiconductor device according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate.

[0010] Further, calibrating the liquid flow rate of the semiconductor device according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate includes:

[0011] Determine a plurality of reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate;

[0012] Calibrate each liquid flow rate of the semiconductor device according to the reference deviation rate.

[0013] Further, calibrating each liquid flow rate of the semiconductor device according to the reference deviation rate includes:

[0014] Compare each reference deviation rate with a fault tolerance threshold and a fault threshold, and calibrate each liquid flow rate of the semiconductor device according to the comparison result.

[0015] Further, comparing each reference deviation rate with a fault tolerance threshold and a fault threshold, and calibrating each liquid flow rate of the semiconductor device according to the comparison result includes:

[0016] If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, perform a calibration process on the liquid flow rate corresponding to the reference deviation rate;

[0017] If the reference deviation rate is greater than or equal to the fault threshold, perform an alarm process on the liquid flow rate corresponding to the reference deviation rate.

[0018] Further, the difference between the pressure change values of two adjacent vacuum chambers is greater than a preset pressure difference value.

[0019] Further, before obtaining the vacuum chamber carrier gas pressure change value corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining for a first preset duration, it further includes:

[0020] Control the vacuum chamber to be in a vacuum state, control the temperature of the vacuum chamber within a preset temperature range, and control the chamber leakage rate of the vacuum chamber within a second preset range.

[0021] According to another aspect of the present invention, there is provided a liquid flow rate calibration device for a semiconductor device, the liquid flow rate calibration device includes:

[0022] A vacuum chamber carrier gas pressure acquisition module, configured to acquire the vacuum chamber carrier gas pressure change value corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining for a first preset duration; wherein, the carrier gas flow rate is the flow rate output by the mass flow controller;

[0023] A vacuum chamber mixed gas pressure acquisition module, configured to acquire the vacuum chamber mixed gas pressure change value corresponding to the mixed gas flow rate multiple times when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate and maintaining for a first preset duration; wherein, the mixed gas flow rate is the flow rate of the mixed gas of the carrier gas and the vaporized liquid; the liquid flow rate is the flow rate output by the liquid flow controller;

[0024] A vacuum chamber pressure change value determination module, configured to determine the vacuum chamber pressure change value corresponding to each liquid flow rate based on the carrier gas pressure change value of the vacuum chamber and the mixed gas pressure change value of each vacuum chamber;

[0025] A liquid flow rate verification module, configured to verify the liquid flow rate of the semiconductor device according to each liquid flow rate and the corresponding vacuum chamber pressure change value of the liquid flow rate.

[0026] According to another aspect of the present invention, there is provided an electronic device, the electronic device including:

[0027] At least one processor; and

[0028] A memory communicatively connected to the at least one processor; wherein,

[0029] The memory stores a computer program executable by the at least one processor, and when the computer program is executed by the at least one processor, the at least one processor is enabled to execute the liquid flow rate verification method of the semiconductor device according to any embodiment of the present invention.

[0030] According to another aspect of the present invention, there is provided a computer-readable storage medium, the computer-readable storage medium storing computer instructions, and the computer instructions are used to implement the liquid flow rate verification method of the semiconductor device according to any embodiment of the present invention when executed by a processor.

[0031] According to another aspect of the present invention, there is provided a computer program product, the computer program product including a computer program, and the computer program implements the liquid flow rate verification method of the semiconductor device according to any embodiment of the present invention when executed by a processor.

[0032] The liquid flow rate calibration method for a semiconductor device provided by an embodiment of the present invention includes obtaining the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining for the first preset duration. Then, multiple times, when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate, and after maintaining for the first preset duration, the change value of the mixed gas pressure in the vacuum chamber corresponding to the mixed gas flow rate is obtained. According to the change value of the carrier gas pressure in the vacuum chamber and each change value of the mixed gas pressure in the vacuum chamber, the change value of the pressure in the vacuum chamber corresponding to each liquid flow rate is determined. The liquid flow rate of the semiconductor device is calibrated according to each liquid flow rate and the change value of the pressure in the vacuum chamber corresponding to the liquid flow rate. Since the change value of the pressure in the vacuum chamber is proportional to the gas flow rate, and there are easily residual gases in the vacuum chamber, which is likely to cause systematic errors. In this application, by determining the change value of the pressure in the vacuum chamber corresponding to each liquid flow rate according to the carrier gas pressure in the vacuum chamber and each mixed gas pressure, that is, using the differential method, the systematic errors can be eliminated, the accuracy of data measurement is improved, and further the calibration accuracy of the liquid flow rate output by the liquid flow controller is improved.

[0033] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0035] Figure 1 is a flowchart of a liquid flow rate calibration method for a semiconductor device provided by an embodiment of the present invention;

[0036] Figure 2 is a structural schematic diagram of a liquid flow rate calibration device provided by an embodiment of the present invention;

[0037] Figure 3 is a scatter plot of the liquid flow rate and the change value of the pressure in the vacuum chamber provided by an embodiment of the present invention;

[0038] Figure 4 is a trend chart of the liquid flow rate and the change value of the pressure in the vacuum chamber provided by an embodiment of the present invention;

[0039] Figure 5 is a structural schematic diagram of a liquid flow rate calibration device for a semiconductor device provided by an embodiment of the present invention;

[0040] Figure 6 The schematic structural diagram of an electronic device that can be used to implement the embodiments of the present invention is shown. Detailed implementation manners

[0041] In order to enable those skilled in the art of the present technology to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0042] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such used data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0043] The embodiments of the present invention provide a method for calibrating the liquid flow rate of a semiconductor device. Figure 1 is a flowchart of a method for calibrating the liquid flow rate of a semiconductor device provided according to an embodiment of the present invention. Figure 2 is a schematic structural diagram of a liquid flow rate calibration device provided according to an embodiment of the present invention. Referring to Figure 1 and Figure 2 , the liquid flow rate calibration method includes:

[0044] S110. Obtain the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for the first preset duration; wherein, the carrier gas flow rate is the flow rate output by the mass flow controller.

[0045] Specifically, after starting to calibrate the liquid flow rate of the semiconductor device, first control the vacuum chamber 4 to be in a vacuum state, control the temperature of the vacuum chamber within a preset temperature range, and at the same time control the chamber leakage rate of the vacuum chamber 4 within a second preset range. Exemplarily, during the process of testing the chamber leakage rate, if there is residual liquid in the vacuum chamber 4, the residual liquid will slowly release and turn into gas in the vacuum environment, resulting in a pressure increase. At this time, it is easy to have a situation where the chamber leakage rate does not meet the requirements. Therefore, when the chamber leakage rate meets the experimental requirements, it can be judged that there is no liquid in the vacuum chamber 4; if the chamber leakage rate does not meet the experimental requirements, stop the test and check for chamber abnormal problems. After ensuring that the chamber leakage rate of the vacuum chamber 4 meets the experimental requirements, control the mass flow controller 2, the vaporization controller 5, and the diaphragm valve 6 to open and work, and control the bypass valve 8 to close, so that the carrier gas enters the vacuum chamber 4 through the mass flow controller 2, the vaporization controller 5, the gas heating pipeline 7, and the diaphragm valve 6. When the carrier gas flow rate is equal to the preset carrier gas flow rate and remains stable, control the isolation valve 9 to close. After continuously outputting the carrier gas to the vacuum chamber 4 for a first preset duration, obtain the change value of the carrier gas pressure in the vacuum chamber after continuously outputting the carrier gas to the vacuum chamber 4 for the first preset duration through the pressure gauge 1. Among them, the first preset duration can be set according to the actual situation, and the embodiments of the present invention do not limit this. The carrier gas can be an inert gas such as nitrogen. In addition, extending the first preset duration can amplify the pressure change value, and adjusting the preset carrier gas flow rate can prevent the pressure from exceeding the range, thereby achieving a wide range coverage of 0.2 - 10 g / min.

[0046] S120. Obtain multiple times the change value of the mixed gas pressure in the vacuum chamber corresponding to the mixed gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate, and maintain it for a first preset duration; wherein, the mixed gas flow rate is the flow rate of the mixed gas of the carrier gas and the vaporized liquid, and the liquid flow rate is the flow rate output through the liquid flow controller.

[0047] Specifically, after obtaining the carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate, continue to control the mass flow controller 2 to output the carrier gas flow rate, which is the preset carrier gas flow rate, and open the isolation valve 9 to make the vacuum chamber 4 in a balanced state. At this time, the liquid flow controller 3 is controlled to open and work, and the liquid output by the liquid flow controller 3 is vaporized by the vaporization controller 5, and then mixed with the carrier gas output by the mass flow controller 2 to form a mixed gas, and enters the vacuum chamber 4 through the gas heating pipeline 7 and the diaphragm valve 6. When the liquid flow output by the liquid flow controller 3 is equal to the preset liquid flow rate and remains stable, the isolation valve 9 is controlled to close. At this time, after continuously outputting the mixed gas to the vacuum chamber 4 for the first preset time period, the vacuum chamber mixed gas pressure change value of the vacuum chamber 4 after continuously outputting the mixed gas to the vacuum chamber 4 for the first preset time period is obtained. After that, after changing the liquid flow rate output by the liquid flow controller 3 for multiple times, that is, changing the mixed gas flow rate, repeat the above steps to achieve the acquisition of the mixed gas pressure change value of the vacuum chamber within the first preset time period under different mixed gas flow rates. For example, the mixed gas pressure change value of the vacuum chamber under different mixed gas flow rates can be acquired 10 times according to actual needs, and the liquid flow rates with the same preset threshold value can be increased sequentially, and the mixed gas pressure change value of the vacuum chamber under each corresponding mixed gas flow rate can be determined according to the liquid flow rate after increasing the preset threshold value. In the process of obtaining the change value of the mixed gas pressure of the vacuum chamber under multiple different mixed gas flow rates, after each mixed gas measurement, the change of the chamber state caused by the residual liquid after vaporization is the key interference factor in the measurement process. In order to solve the above interference problem, the following solutions are proposed, which are specifically described as follows: Solution 1, after each mixed gas measurement, the chamber temperature can be maintained at a first preset temperature, exemplarily, the first preset temperature is 65°C, and the heating base in the vacuum chamber 4 is maintained at a second preset temperature, exemplarily, the second preset temperature is 400°C, at this time, the dry pump 11 continues to pump gas and maintains the first set time, exemplarily, the first set time is 24 hours, so that the residual liquid is completely vaporized and discharged to restore the initial state of the vacuum chamber 4; Solution 2, a high flow rate of inert gas can be quickly introduced into the vacuum chamber 4, exemplarily, the high flow rate of inert gas can be helium, nitrogen, etc., the flow rate is greater than or equal to 5000 sccm, and maintained for the second set time, exemplarily, the second set time is 30s, forming gas turbulence to flush the cavity wall. After flushing the cavity wall with gas, the vacuum is repeatedly pumped to the baseline pressure to ensure that the residue is carried out. After the above chamber liquid residue optimization process is performed, the chamber leakage rate test can be performed again to determine whether there is liquid residue in the vacuum chamber 4.

[0048] S130, determining a vacuum chamber pressure change value corresponding to each liquid flow rate according to the vacuum chamber carrier gas pressure change value and each vacuum chamber mixed gas pressure change value.

[0049] Specifically, the obtained pressure change value of the mixed gas in each vacuum chamber can be subtracted from the pressure change value of the carrier gas in the vacuum chamber, and then the pressure change value of the vacuum chamber corresponding to each liquid flow rate can be determined.

[0050] S140. Calibrate the liquid flow rate of the semiconductor device according to each liquid flow rate and the pressure change value of each vacuum chamber corresponding to the liquid flow rate.

[0051] Specifically, according to each liquid flow rate and the pressure change value of each vacuum chamber corresponding to the liquid flow rate, multiple reference deviation rates corresponding to each liquid flow rate can be determined, and finally, the liquid flow rate of each semiconductor device can be calibrated according to the reference deviation rates. Exemplarily, first, a scatter plot of the liquid flow rate and the pressure change value of the vacuum chamber can be drawn according to each liquid flow rate and the pressure change value of each vacuum chamber corresponding to the liquid flow rate, and then multiple reference deviation rates corresponding to each liquid flow rate can be calculated according to the scatter plot of the liquid flow rate and the pressure change value of the vacuum chamber. Among them, the reference deviation rate is a physical quantity indicating whether the current liquid flow rate is in a normal state.

[0052] The liquid flow rate calibration method of the semiconductor device provided by the embodiment of the present invention includes obtaining the pressure change value of the carrier gas in the vacuum chamber corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining it for the first preset duration, and then obtaining multiple times the pressure change value of the mixed gas in the vacuum chamber corresponding to the mixed gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate and maintaining it for the first preset duration. According to the pressure change value of the carrier gas in the vacuum chamber and each pressure change value of the mixed gas in the vacuum chamber, the pressure change value of the vacuum chamber corresponding to each liquid flow rate is determined, and the liquid flow rate of the semiconductor device is calibrated according to each liquid flow rate and the pressure change value of each vacuum chamber corresponding to the liquid flow rate. Since the pressure change value of the vacuum chamber is proportional to the gas flow rate, and there are easily residual gases in the vacuum chamber, which is likely to cause systematic errors. In this application, by determining the pressure change value of the vacuum chamber corresponding to each liquid flow rate according to the carrier gas pressure in the vacuum chamber and each mixed gas pressure, that is, using the differential method, systematic errors can be eliminated, the accuracy of data measurement is improved, and the calibration accuracy of the liquid flow rate output by the liquid flow controller is further improved.

[0053] Exemplarily, Figure 3 is a scatter plot of the liquid flow rate and the pressure change value of the vacuum chamber provided by the embodiment of the present invention. Figure 4 is a trend chart of the liquid flow rate and the pressure change value of the vacuum chamber provided by the embodiment of the present invention. As Figure 3 and Figure 4 shown, the embodiment of the present invention takes the liquid output by the liquid flow controller as triethyl borate and the carrier gas as helium as an example for illustration, and the specific description is as follows:

[0054] The ambient temperature of the vacuum chamber 4 is 400 °C, the first preset duration is 100 s, the preset carrier gas flow rate is 300 sccm, and the chamber leak rate is less than 2 mTorr / min. The range of the liquid flow controller is 0.5 g / min, that is, 500 mgm. According to the above calibration method, the following data as shown in Table 1 can be obtained. Table 1 is a correspondence table between the liquid flow rate and the change value of the vacuum chamber pressure:

[0055] Table 1 Correspondence table between liquid flow rate and change value of vacuum chamber pressure

[0056] Liquid flow rate F (mgm) First pressure change value P1 (Torr) Second pressure change value P2 (Torr) Third pressure change value P3 (Torr) Fourth pressure change value P4 (Torr) 50 1.771 1.648 1.954 1.984 100 3.327 3.448 3.419 3.876 150 5.219 5.768 5.189 5.646 200 6.928 7.446 6.959 7.416 250 8.729 9.399 8.912 9.339 300 10.743 11.108 10.835 11.139 350 12.635 12.787 12.788 13.245 400 14.619 14.77 14.71 15.107 450 16.664 16.907 16.669 16.807 500 18.464 18.921 18.469 18.707

[0057] After that, according to the data in Table 1, a scatter plot as shown in Figure 3 is drawn, and a trend plot as shown in Figure 4 is drawn through linear regression analysis, and the relationship factor k and the goodness of fit R² of the evaluation model are calculated by the least squares method. Since R² in the 4 groups of data is above 0.999 and close to 1, the model fits the data well. At this time, the k values calculated by the least squares method are close, which are k1 = 0.0375, k2 = 0.0379, k3 = 0.0374, k4 = 0.0373 respectively, and the reference factor k0 = 0.037525 is calculated from k1, k2, k3 and k4. And the liquid flow rate of the semiconductor device is calibrated according to the calculated multiple relationship factors and the reference factor.

[0058] Furthermore, calibrating the liquid flow rate of the semiconductor device according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate includes:

[0059] Determining a plurality of reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate;

[0060] Calibrating each liquid flow rate of the semiconductor device according to the reference deviation rate.

[0061] Specifically, after drawing a scatter plot as shown in Figure 3 according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate, it can be visually confirmed that the liquid flow rate is proportional to the change value of the vacuum chamber pressure, and the relationship factor is calculated by the least squares method, that is, the slope of the straight line in the trend plot as shown in Figure 4 . Then, multiple groups of liquid flow rates and change values of the vacuum chamber pressure are obtained, and multiple relationship factors are calculated according to the multiple groups of liquid flow rates and change values of the vacuum chamber pressure, and the multiple relationship factors are averaged to determine the reference factor, and according to each relationship factor and the reference factor, the following formula is used to determine a plurality of reference deviation rates corresponding to each liquid flow rate:

[0062] A = (|k0 - ki| / k0);

[0063] Where A is the reference deviation rate, k0 is the reference factor, ki is the relationship factor, and i is a positive integer greater than 0.

[0064] The reference deviation rate A is the percentage of relative error between the currently measured relationship factor ki and the factory reference factor k0. The reference deviation rate A reflects the stability and accuracy of the liquid flow controller. By dynamically monitoring the reference deviation rate A, the drift degree of the liquid flow controller can be quantified to ensure high-precision control of the repetitive process. Then, each reference deviation rate is compared with the fault tolerance threshold and the fault threshold, and each liquid flow of the semiconductor device is calibrated according to the comparison result.

[0065] Furthermore, calibrating each liquid flow of the semiconductor device according to the reference deviation rate includes:

[0066] Comparing each reference deviation rate with the fault tolerance threshold and the fault threshold, and calibrating each liquid flow of the semiconductor device according to the comparison result.

[0067] Specifically, if the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, the liquid flow corresponding to the reference deviation rate is calibrated. If the reference deviation rate is greater than or equal to the fault threshold, the liquid flow corresponding to the reference deviation rate is alarmed. Among them, the fault tolerance threshold and the fault threshold can be set according to the actual situation. Exemplarily, the fault tolerance threshold can be 5%, and the fault threshold can be 10%. If the reference deviation rate A is less than 5%, it is determined that the system is in a normal state and no calibration is required. If the reference deviation rate A is greater than or equal to 5% and less than 10%, the liquid flow corresponding to the reference deviation rate is calibrated. If the reference deviation rate A is greater than or equal to 10%, it indicates that there is an abnormality in the liquid flow controller, the liquid flow corresponding to the reference deviation rate is alarmed, and the fault is investigated. If k1 = 0.0375, k2 = 0.0379, k3 = 0.0374, k4 = 0.0373, k0 = 0.037525, then according to the reference deviation rate calculation formula, A1 = 0, A2 = 1.067%, A3 = 0.267%, A4 = 0.533%. Since the above four reference deviation rates are all less than the fault tolerance threshold, it is determined that the system is in a normal state and no calibration is required. If k0 = 0.0375 and ki = 0.0395, then the reference deviation rate A ≈ 5.33%. At this time, the liquid flow corresponding to the reference deviation rate needs to be calibrated.

[0068] Furthermore, comparing each reference deviation rate with the fault tolerance threshold and the fault threshold, and calibrating each liquid flow of the semiconductor device according to the comparison result includes:

[0069] If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, calibration processing is performed on the liquid flow rate corresponding to the reference deviation rate;

[0070] If the reference deviation rate is greater than or equal to the fault threshold, alarm processing is performed on the liquid flow rate corresponding to the reference deviation rate.

[0071] Specifically, if the reference deviation rate is less than the fault tolerance threshold, it indicates that the liquid flow rate is in a normal state.

[0072] If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, it indicates that the liquid flow rate is in an abnormal state. At this time, calibration processing can be performed on the liquid flow rate corresponding to the reference deviation rate. Exemplarily, the liquid flow rate corresponding to the reference deviation rate can be calibrated according to the following formula:

[0073] Fi’ = Fi × k0 / kj;

[0074] Where, Fi’ is the calibrated liquid flow rate, Fi is the abnormal liquid flow rate before calibration, k0 is the reference factor, and kj is the relationship factor corresponding to the abnormal liquid flow rate before calibration.

[0075] After determining the calibrated liquid flow rate, calculate the relationship factor corresponding to the calibrated liquid flow rate according to the above calculation method, and determine the reference deviation rate corresponding to it according to the relationship factor, and judge whether the reference deviation rate is less than the fault tolerance threshold. If so, the calibration ends; if not, continue to calibrate the liquid flow rate until the calculated reference deviation rate is less than the fault tolerance threshold. Exemplarily, if the original set liquid flow rate Fi = 500 mg / min and the calibrated liquid flow rate Fi’ = 500×0.375 / 0.0395 ≈ 474.68 mg / min, calculate the relationship factor corresponding to the calibrated liquid flow rate Fi’ according to the above calculation method, and determine the reference deviation rate corresponding to it according to the relationship factor, and judge whether the reference deviation rate is less than the fault tolerance threshold. If the reference deviation rate is greater than or equal to the fault threshold, it indicates that the reference deviation rate is large. At this time, the liquid flow controller is in an abnormal state, and alarm processing needs to be performed on the liquid flow rate corresponding to the reference deviation rate. Among them, the fault tolerance threshold and the fault threshold can be set according to the actual situation, and the embodiments of the present invention do not limit this.

[0076] Further, the difference between the pressure change values of two adjacent vacuum chambers is greater than the preset pressure difference.

[0077] Where, the preset pressure difference can be 1% of the range of pressure gauge 1.

[0078] Specifically, if the difference between the pressure change values of two adjacent vacuum chambers is less than or equal to a preset pressure difference, the preset carrier gas flow rate and the first preset duration can be adjusted to make the difference between the pressure change values of two adjacent vacuum chambers greater than the preset pressure difference, so as to calibrate the liquid flow rate of the small-range liquid flow controller, and further improve the calibration accuracy of the liquid flow rate.

[0079] Further, referring to Figure 2 , after obtaining the carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining the first preset duration, it further includes:

[0080] Controlling the vacuum chamber to be in a vacuum state, controlling the temperature of the vacuum chamber within a preset temperature range, and controlling the chamber leakage rate of the vacuum chamber within a second preset range.

[0081] Specifically, before obtaining the carrier gas pressure of the vacuum chamber corresponding to the carrier gas flow rate through the pressure gauge 1, control the isolation valve 9, the vacuum control module 10, and the dry pump 11 to open to control the vacuum chamber 4 to maintain a vacuum state for a second preset duration, control the temperature of the vacuum chamber within a preset temperature range, and at the same time control the chamber leakage rate of the vacuum chamber 4 within a second preset range. The second preset duration, the preset temperature range, and the second preset range can be set according to actual situations. Exemplarily, the second preset duration can be 24 hours.

[0082] The embodiment of the present invention provides a liquid flow rate calibration device for a semiconductor device. Figure 5 It is a schematic structural diagram of a liquid flow rate calibration device for a semiconductor device provided according to the embodiment of the present invention. Referring to Figure 5 , the liquid flow rate calibration device 200 includes:

[0083] A vacuum chamber carrier gas pressure acquisition module 210, configured to acquire the carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining the first preset duration; wherein, the carrier gas flow rate is the flow rate output by the mass flow controller;

[0084] A vacuum chamber mixed gas pressure acquisition module 220, configured to acquire multiple times the mixed gas pressure change value of the vacuum chamber corresponding to the mixed gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate and maintaining the first preset duration; wherein, the mixed gas flow rate is the flow rate of the mixed gas of the carrier gas and the vaporized liquid; the liquid flow rate is the flow rate output by the liquid flow controller;

[0085] A vacuum chamber pressure change value determination module 230, configured to determine the vacuum chamber pressure change value corresponding to each liquid flow rate according to the carrier gas pressure change value of the vacuum chamber and the mixed gas pressure change value of each vacuum chamber;

[0086] A liquid flow rate calibration module 240 is configured to calibrate the liquid flow rate of a semiconductor device according to each liquid flow rate and each corresponding vacuum chamber pressure change value.

[0087] Furthermore, the liquid flow rate calibration module 240 includes:

[0088] A reference deviation rate determination sub-module, configured to determine multiple reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each corresponding vacuum chamber pressure change value;

[0089] A liquid flow rate calibration sub-module, which calibrates each liquid flow rate of the semiconductor device according to the reference deviation rate.

[0090] Furthermore, the liquid flow rate calibration sub-module includes:

[0091] A liquid flow rate calibration unit, configured to compare each reference deviation rate with a fault tolerance threshold and a failure threshold, and calibrate each liquid flow rate of the semiconductor device according to the comparison result.

[0092] Furthermore, the liquid flow rate calibration unit includes:

[0093] A calibration processing sub-unit, configured to perform calibration processing on the liquid flow rate corresponding to the reference deviation rate when the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the failure threshold;

[0094] An alarm processing sub-unit, configured to perform alarm processing on the liquid flow rate corresponding to the reference deviation rate when the reference deviation rate is greater than or equal to the failure threshold.

[0095] Furthermore, the difference between the pressure change values of two adjacent vacuum chambers is greater than a preset pressure difference value.

[0096] Furthermore, the liquid flow rate calibration device 200 further includes:

[0097] A vacuum processing module, configured to control the vacuum chamber to be in a vacuum state, control the temperature of the vacuum chamber within a preset temperature range, and control the chamber leakage rate of the vacuum chamber within a second preset range before obtaining the vacuum chamber carrier gas pressure change value corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to a preset carrier gas flow rate and maintaining for a first preset duration.

[0098] The liquid flow rate calibration device of the semiconductor device provided by the embodiments of the present invention can execute the liquid flow rate calibration method of the semiconductor device provided by any embodiment of the present invention, and has corresponding functional modules and beneficial effects for executing the method.

[0099] Figure 6The structural schematic diagram of an electronic device that can be used to implement the embodiments of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or claimed herein.

[0100] As Figure 6 shown, the electronic device 100 includes at least one processor 110, and a memory communicatively connected to the at least one processor 110, such as a read-only memory (ROM) 120, a random access memory (RAM) 130, etc. The memory stores a computer program executable by the at least one processor. The processor 110 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 120 or the computer program loaded from the storage unit 180 into the random access memory (RAM) 130. In the RAM 130, various programs and data required for the operation of the electronic device 100 can also be stored. The processor 110, the ROM 120, and the RAM 130 are connected to each other via a bus 140. The input / output (I / O) interface 150 is also connected to the bus 140.

[0101] Multiple components in the electronic device 100 are connected to the I / O interface 150, including: an input unit 160, such as a keyboard, a mouse, etc.; an output unit 170, such as various types of displays, speakers, etc.; a storage unit 180, such as a disk, an optical disc, etc.; and a communication unit 190, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 190 allows the electronic device 100 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks.

[0102] The processor 110 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the processor 110 include but are not limited to a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 110 executes the various methods and processes described above, such as the liquid flow rate verification method for semiconductor devices.

[0103] In some embodiments, a method for liquid flow rate verification of a semiconductor device may be implemented as a computer program tangibly embodied in a computer-readable storage medium, such as storage unit 180. In some embodiments, part or all of the computer program may be loaded and / or installed onto the electronic device 100 via the ROM 120 and / or the communication unit 190. When the computer program is loaded into the RAM 130 and executed by the processor 110, one or more steps of the method for liquid flow rate verification of the semiconductor device described above may be performed. Alternatively, in other embodiments, the processor 110 may be configured for the method for liquid flow rate verification of the semiconductor device by any other suitable means (e.g., by means of firmware).

[0104] Various embodiments of the systems and techniques described above in this document can be implemented in digital electronic circuitry, integrated circuit systems, field-programmable gate arrays (FPGA), application specific integrated circuits (ASIC), application specific standard products (ASSP), systems-on-a-chip (SOC), complex programmable logic devices (CPLD), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include: being implemented in one or more computer programs executable and / or interpretable on a programmable system including at least one programmable processor, which can be a special-purpose or general-purpose programmable processor that receives data and instructions from, and transmits data and instructions to, a storage system, at least one input device, and at least one output device.

[0105] The computer programs for implementing the methods of the present invention can be written in any combination of one or more programming languages. These computer programs can be provided to a processor of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that the computer programs, when executed by the processor, cause the functions / operations specified in the flowchart(s) and / or block diagram(s) to be implemented. The computer programs can be executed entirely on the machine, partly on the machine, as a stand-alone software package partly on the machine and partly on a remote machine, or entirely on the remote machine or server.

[0106] In the context of the present invention, a computer-readable storage medium can be a tangible medium that can contain or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer-readable storage medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatuses, or devices, or any suitable combination of the foregoing. Alternatively, the computer-readable storage medium can be a machine-readable signal medium. More specific examples of the machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0107] To provide for interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the electronic device. Other kinds of devices can also be used to provide for interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, speech input, or tactile input).

[0108] The systems and techniques described herein can be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0109] A computing system may include a client and a server. The client and the server are generally far from each other and usually interact via a communication network. The client-server relationship is created by computer programs running on respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system, solving the defects of difficult management and weak business scalability existing in traditional physical hosts and VPS services.

[0110] It should be understood that various forms of processes shown above can be used, with steps reordered, added or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is made herein.

[0111] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for verifying the liquid flow rate of a semiconductor device, characterized in that, Including: Obtaining the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining for a first preset duration; wherein, the carrier gas flow rate is the flow rate output by the mass flow controller; Obtaining multiple times the change value of the mixed gas pressure in the vacuum chamber corresponding to the mixed gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate and maintaining for a first preset duration; wherein, the mixed gas flow rate is the flow rate of the mixed gas of the carrier gas and the vaporized liquid; the liquid flow rate is the flow rate output by the liquid flow controller; Determining the change value of the vacuum chamber pressure corresponding to each liquid flow rate according to the change value of the carrier gas pressure in the vacuum chamber and each change value of the mixed gas pressure in the vacuum chamber; Calibrating the liquid flow rate of the semiconductor device according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate.

2. The liquid flow rate calibration method of the semiconductor device according to claim 1, characterized in that Calibrating the liquid flow rate of the semiconductor device according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate includes: Determining a plurality of reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each change value of the vacuum chamber pressure corresponding to the liquid flow rate; Calibrating each liquid flow rate of the semiconductor device according to the reference deviation rate.

3. The method for calibrating the liquid flow rate of the semiconductor device according to claim 2, characterized in that, Calibrating each liquid flow rate of the semiconductor device according to the reference deviation rate includes: Comparing each reference deviation rate with a fault tolerance threshold and a failure threshold, and calibrating each liquid flow rate of the semiconductor device according to the comparison result.

4. The liquid flow rate calibration method of the semiconductor device according to claim 3, characterized in that, Comparing each reference deviation rate with a fault tolerance threshold and a failure threshold, and calibrating each liquid flow rate of the semiconductor device according to the comparison result includes: If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the failure threshold, performing calibration processing on the liquid flow rate corresponding to the reference deviation rate; If the reference deviation rate is greater than or equal to the failure threshold, performing alarm processing on the liquid flow rate corresponding to the reference deviation rate.

5. The method for calibrating the liquid flow rate of a semiconductor device according to claim 1, wherein The difference between two adjacent change values of the vacuum chamber pressure is greater than a preset pressure difference.

6. The liquid flow rate calibration method of the semiconductor device according to claim 1, wherein, Before obtaining the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining for a first preset duration, further including: Controlling the vacuum chamber to be in a vacuum state, controlling the temperature of the vacuum chamber within a preset temperature range, and controlling the chamber leakage rate of the vacuum chamber within a second preset range.

7. A liquid flow rate calibration device for a semiconductor device, characterized in that, Including: A vacuum chamber carrier gas pressure acquisition module, configured to obtain the change value of the carrier gas pressure in the vacuum chamber corresponding to the carrier gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate and maintaining for a first preset duration; wherein, the carrier gas flow rate is the flow rate output by the mass flow controller; A vacuum chamber mixed gas pressure acquisition module is configured to acquire, multiple times, the change value of the vacuum chamber mixed gas pressure corresponding to the mixed gas flow rate after the carrier gas flow rate is equal to the preset carrier gas flow rate, the liquid flow rate is equal to the preset liquid flow rate, and a first preset duration is maintained; wherein, the mixed gas flow rate is the flow rate of the mixed gas of the carrier gas and the vaporized liquid; the liquid flow rate is the flow rate output by the liquid flow controller. A vacuum chamber pressure change value determination module is configured to determine the vacuum chamber pressure change value corresponding to each liquid flow rate according to the vacuum chamber carrier gas pressure change value and each vacuum chamber mixed gas pressure change value. A liquid flow rate verification module is configured to verify the liquid flow rate of the semiconductor device according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate.

8. An electronic device, characterized in that, The electronic device includes: At least one processor; and A memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the liquid flow rate verification method of the semiconductor device according to any one of claims 1-6.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions, and the computer instructions are used to implement the liquid flow rate verification method of the semiconductor device according to any one of claims 1-6 when executed by a processor.

10. A computer program product, characterized in that, The computer program product includes a computer program, and the computer program implements the liquid flow rate verification method of the semiconductor device according to any one of claims 1-6 when executed by a processor.

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