Silicon / silicon thin film lead zirconate titanate hetero-integrated optical platform and method of manufacturing the same

Abstract

The application provides a silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform, which can be applied to the field of optoelectronic integration technology, and the platform comprises a silicon device area, a bonding layer and a lead zirconate titanate device area, wherein the silicon device area and the lead zirconate titanate device area are bonded on opposite sides of the bonding layer; the silicon device area comprises a silicon coupler and a silicon-based photodetector, wherein the silicon coupler and the silicon-based photodetector are made of a top silicon layer of silicon on the same insulating substrate; the lead zirconate titanate device area comprises a lead zirconate titanate coupler and a lead zirconate titanate-based modulator, wherein the lead zirconate titanate coupler and the lead zirconate titanate-based modulator are made of a monocrystalline lead zirconate titanate thin film layer of the same lead zirconate titanate wafer. The platform realizes the integration of photodetectors and modulators, has CMOS compatibility and commercial prospects, breaks through the bandwidth limitation of silicon-based modulation, is suitable for high-speed communication and other fields, and provides key support for related applications.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optoelectronic integration, and in particular to a silicon / single-crystal thin-film lead zirconate titanate hetero-integrated optical platform and a preparation method thereof. BACKGROUND

[0002] With the rapid development of data centers, artificial intelligence and cloud computing technologies, global traffic demand is growing explosively, and the performance requirements of high-speed information networks are becoming increasingly stringent, covering key indicators such as high data transmission rate, low power consumption and high integration. This trend has prompted the research and development of high-performance optoelectronic materials and devices to become the focus of academia and industry.

[0003] Silicon, as the mainstream material for integrated circuit manufacturing, has outstanding optoelectronic performance. Silicon optical technology and silicon-based optoelectronic integration technology based on silicon-on-insulator (SOI) platforms have played an important role in the optical communication market, and their passive devices, electro-optical modulators, photodetectors and wavelength division multiplexers have relatively mature technologies. However, the center-symmetric crystal structure of silicon results in the absence of electro-optic response. In electro-optic modulation applications, the traditional plasmonic dispersion modulation method has poor efficiency, the linearity is disturbed by the residual amplitude modulation caused by carrier absorption, and the carrier lifetime under forward bias and the resistance-capacitance bandwidth characteristics under reverse bias severely limit the device bandwidth, making it difficult to meet the development needs of high-speed communication.

[0004] At the same time, thin-film lead zirconate titanate (Pb (ZrTi) O3, PZT) ferroelectric materials stand out due to their high transparency, excellent chemical / thermal stability and high electro-optic coefficient. Its Pockels coefficient is more than twice that of thin-film lithium niobate, and it has great potential in realizing low energy consumption, high speed and high integration on-chip electro-optic modulation, and is expected to break through the bottleneck of traditional material systems in bandwidth and energy efficiency design. Given the significance of integrating electro-optic modulators and photodetectors to reduce chip size, and the significant advantages of lead zirconate titanate materials in electro-optic modulation, building a silicon-based hetero-integrated optical platform based on lead zirconate titanate thin films has become a key path to realizing efficient optoelectronic integration. However, as of now, research on related integrated optical platforms is still in the blank stage, and innovative solutions are urgently needed. SUMMARY

[0005] (I) Technical problems to be solved

[0006] To solve at least one of the above problems existing in the prior art integrated optical platform, embodiments of the present application provide a silicon / single-crystal thin film lead zirconate titanate hetero-integrated optical platform and a preparation method thereof, which realizes the silicon-single-crystal thin film lead zirconate titanate hetero-integrated optical platform by combining the single-crystal lead zirconate titanate thin film grown on the metal substrate with the wafer transfer bonding process, and realizes the complementary metal oxide semiconductor (CMOS) compatible hetero-integrated optical platform with receiving and transmitting functions.

[0007] (II) Technical solutions

[0008] In view of the above technical problems, embodiments of the present application provide a silicon / single-crystal thin film lead zirconate titanate hetero-integrated optical platform and a preparation method thereof.

[0009] According to a first aspect of the present application, a silicon / single-crystal thin film lead zirconate titanate hetero-integrated optical platform is provided, comprising: a silicon device region, a bonding layer and a lead zirconate titanate device region, wherein the silicon device region and the lead zirconate titanate device region are bonded on opposite sides of the bonding layer, the silicon device region comprises a silicon coupler and a silicon-based photodetector, wherein the silicon coupler and the silicon-based photodetector are made of a top silicon layer of silicon on the same insulating substrate; the lead zirconate titanate device region comprises a lead zirconate titanate coupler and a lead zirconate titanate-based modulator, wherein the lead zirconate titanate coupler and the lead zirconate titanate-based modulator are made of a single-crystal lead zirconate titanate thin film layer of the same lead zirconate titanate wafer; an optical field evanescent wave coupling structure is formed between the silicon device region and the bonding layer; and an optical field evanescent wave coupling structure is formed between the bonding layer and the lead zirconate titanate device region.

[0010] In some exemplary embodiments, the silicon-based photodetector comprises: a p-type doped region comprising a first surface, the first surface being located on a side of the p-type doped region close to the bonding layer; an active region located on the first surface of the p-type doped region; an n-type doped region located on a side of the active region away from the p-type doped region; an n-face electrode located on a side of the n-type doped region away from the p-type doped region; and a p-face electrode located on the first surface of the p-type doped region.

[0011] In some exemplary embodiments, further comprising: a first metal hole and a second metal hole, wherein the first metal hole penetrates the lead zirconate titanate device region and the bonding layer in a direction perpendicular to the first surface to the p-face electrode; the second metal hole penetrates the lead zirconate titanate device region and the bonding layer in a direction perpendicular to the first surface to the n-face electrode; and the first metal hole and the second metal hole do not contact the lead zirconate titanate-based modulator.

[0012] In some example embodiments, the silicon device region further comprises a first metal electrode, a second metal electrode, a third metal via, and a fourth metal via, wherein the first metal electrode and the second metal electrode are respectively located on two sides of the ridge waveguide of the lead zirconate titanate based modulator; the third metal via passes through a surface of the lead zirconate titanate device region to a surface of the first metal electrode away from the bonding layer; and the fourth metal via passes through a surface of the lead zirconate titanate device region to a surface of the second metal electrode away from the bonding layer.

[0013] In some example embodiments, the silicon device region comprises a first upper buried oxide layer located on the bonding layer; a top silicon layer located on a surface of the first upper buried oxide layer away from the bonding layer; a lower buried oxide layer located on a surface of the top silicon layer away from the bonding layer; and a silicon substrate located on a surface of the lower buried oxide layer away from the bonding layer, wherein the silicon coupler and the silicon based photodetector are located in the top silicon layer.

[0014] In some example embodiments, the lead zirconate titanate device region comprises a single crystal lead zirconate titanate thin film layer located on the bonding layer; and a second upper buried oxide layer located on a surface of the single crystal lead zirconate titanate thin film layer away from the bonding layer, wherein the lead zirconate titanate coupler and the lead zirconate titanate based modulator are located in the single crystal lead zirconate titanate thin film layer.

[0015] In some example embodiments, the material of the silicon based photodetector comprises germanium; and the silicon based photodetector comprises one of a silicon avalanche photodetector, a silicon based nano-powder photodetector, or a backside metal reflection enhanced silicon based photodetector.

[0016] According to a second aspect of the present application, a method for preparing a silicon / single crystal thin film lead zirconate titanate hetero-integrated optical platform is provided, comprising: preparing a silicon wafer on a silicon device insulating substrate and a single crystal thin film lead zirconate titanate wafer, wherein the silicon wafer on the silicon device insulating substrate comprises a silicon substrate, a lower buried oxide layer, a top silicon layer, and a first upper buried oxide layer arranged in sequence; the single crystal thin film lead zirconate titanate wafer comprises a metal substrate, a single crystal thin film lead zirconate titanate thin film layer, and a second upper buried oxide layer arranged in sequence; using a complementary metal oxide semiconductor back-end process to prepare a silicon coupler and a silicon based photodetector on the top silicon layer; using a spin coating process to apply a bonding buffer as a bonding layer on a surface of the first upper buried oxide layer away from the top silicon layer; peeling off the single crystal thin film lead zirconate titanate thin film layer from the single crystal thin film lead zirconate titanate wafer; using a bonding process to transfer and bond the peeled single crystal thin film lead zirconate titanate thin film layer to the bonding layer; and using a complementary metal oxide semiconductor back-end process to etch a lead zirconate titanate coupler and a lead zirconate titanate based modulator on the single crystal thin film lead zirconate titanate thin film layer.

[0017] In some exemplary embodiments, the silicon-based photodetector comprises: a p-type doped region comprising a first surface located on a side of the p-type doped region close to a bonding layer; an active region located on the first surface of the p-type doped region; an n-type doped region located on a side of the active region away from the p-type doped region; an n-face electrode located on a side of the n-type doped region away from the p-type doped region; and a p-face electrode located on the first surface of the p-type doped region; the method further comprises: etching a first metal hole through the lead zirconate titanate device region and the bonding layer to the p-face electrode in a direction perpendicular to the first surface; and etching a second metal hole through the lead zirconate titanate device region and the bonding layer to the n-face electrode in a direction perpendicular to the first surface.

[0018] In some exemplary embodiments, the method further comprises: using a plasma enhanced chemical vapor deposition process to prepare a second upper buried oxygen layer on the etched monocrystalline thin film lead zirconate titanate film layer.

[0019] (Three) beneficial effects

[0020] As can be seen from the above technical solutions, the silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform and the preparation method thereof provided by the embodiments of the present application have at least the following beneficial effects:

[0021] (1) The silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform is realized by using a monocrystalline lead zirconate titanate film grown on a metal substrate in combination with a wafer transfer bonding process, a complementary metal oxide semiconductor (CMOS) compatible hetero-integrated optical platform with receiving and transmitting functions is realized, and a silicon and monocrystalline thin film lead zirconate titanate photoelectric fusion integrated system has a commercial application basis and prospect by using a monocrystalline thin film lead zirconate titanate film silicon-based hetero-integrated optical platform.

[0022] (2) Since the lead zirconate titanate material belongs to a perovskite crystal, it has a clear linear electro-optic effect and a Pockels coefficient greater than 100 pm / V, and a modulator device with an electro-optic bandwidth exceeding 100 GHz can be realized, so that the present application can break through the bandwidth limitation problem of existing silicon-based plasma dispersion modulator devices in the communication application layer, and is suitable for the next generation of high-speed and large-capacity communication application requirements, and can also become an important research and development platform for supporting optical computing, laser radar, high-precision sensing, measurement and other optoelectronic integrated application fields. BRIEF DESCRIPTION OF DRAWINGS

[0023] The above content and other purposes, features and advantages of the present application will be more clearly understood through the following description of the embodiments of the present application with reference to the accompanying drawings, in which:

[0024] Figure 1 Fig. 1 schematically shows a structure of a silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform according to an embodiment of the present application;

[0025] Figure 2 Fig. 1 schematically shows a flowchart of a method for preparing a silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform according to an embodiment of the present application;

[0026] Figure 3 Fig. 2 schematically shows a structure of a silicon device SOI wafer according to an embodiment of the present application;

[0027] Figure 4 Fig. 3 schematically shows a structure of a monocrystalline lead zirconate titanate thin film wafer according to an embodiment of the present application;

[0028] Figure 5 Fig. 4 schematically shows a structure of a silicon device region prepared based on a silicon device SOI wafer according to an embodiment of the present application; and

[0029] Figure 6 Fig. 5 schematically shows a structure of a monocrystalline lead zirconate titanate thin film transferred and bonded to a silicon device SOI wafer according to an embodiment of the present application.

[0030] Fig. 1 schematically shows a structure of a silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform according to an embodiment of the present application. DETAILED DESCRIPTION

[0031] To make the objectives, technical solutions, and superiorities of the present application clearer, the present application will be further described in details below with reference to the embodiments and the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those ordinarily skilled in the art without creative work fall within the scope of the present application.

[0032] Figure 1 Fig. 1 schematically shows a structure of a silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform according to an embodiment of the present application.

[0033] As Figure 1As shown, the silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform according to the embodiment of the application comprises a silicon device region 1, a bonding layer 2 and a lead zirconate titanate device region 3, wherein the silicon device region 1 and the lead zirconate titanate device region 3 are bonded on opposite sides of the bonding layer 2 respectively; the silicon device region 1 comprises a silicon coupler 11 and a silicon-based photodetector 12, wherein the silicon coupler 11 and the silicon-based photodetector 12 are made of a top silicon layer 7 of silicon on the same insulating substrate; the lead zirconate titanate device region 3 comprises a lead zirconate titanate coupler 31 and a lead zirconate titanate-based modulator 32, wherein the lead zirconate titanate coupler 31 and the lead zirconate titanate-based modulator 32 are made of a monocrystalline lead zirconate titanate thin film layer 10 of the same lead zirconate titanate wafer; an optical field evanescent wave coupling structure is formed between the silicon device region 1 and the bonding layer 2; and an optical field evanescent wave coupling structure is formed between the bonding layer 2 and the lead zirconate titanate device region 3.

[0034] In the embodiment of the application, since the lead zirconate titanate material belongs to a perovskite crystal, has obvious linear electro-optic effect and a Pockels coefficient greater than 100 pm / V, a modulator device with an electro-optic bandwidth exceeding 100 GHz can be realized. The silicon device region 1 and the lead zirconate titanate device region 3 can support O-band, C-band and L-band.

[0035] In some exemplary embodiments, the material of the silicon-based photodetector 12 comprises germanium; and the silicon-based photodetector 12 comprises one of a silicon avalanche photodetector, a silicon-based nanopowder photodetector or a backside metal reflection enhanced silicon-based photodetector 12.

[0036] In some exemplary embodiments, the lead zirconate titanate-based modulator 32 comprises a Mach-Zehnder modulator or a micro-ring resonant modulator to realize a photoelectric modulation function.

[0037] In some exemplary embodiments, the silicon-based photodetector 12 comprises a p-type doped region 121, an active region 122, an n-type doped region 123, an n-face electrode 125 and a p-face electrode 124, wherein the p-type doped region 121 comprises a first surface, the first surface is located on a side of the p-type doped region 121 close to the bonding layer 2; the active region 122 is located on the first surface of the p-type doped region 121; the n-type doped region 123 is located on a side of the active region 122 away from the p-type doped region 121; the n-face electrode 125 is located on a side of the n-type doped region 123 away from the p-type doped region 121; and the p-face electrode 124 is located on the first surface of the p-type doped region 121.

[0038] In some exemplary embodiments, the silicon / single-crystal thin film lead zirconate titanate heterogeneous integrated optical platform further comprises a first metal hole 41 and a second metal hole 42, wherein the first metal hole 41 penetrates the lead zirconate titanate device region 3 and the bonding layer 2 in a direction perpendicular to the first surface to the p-face electrode 124; the second metal hole 42 penetrates the lead zirconate titanate device region 3 and the bonding layer 2 in a direction perpendicular to the first surface to the n-face electrode 125; and the first metal hole 41 and the second metal hole 42 do not contact the lead zirconate titanate-based modulator 32.

[0039] In some exemplary embodiments, the silicon device region 1 further comprises a first metal electrode, a second metal electrode, a third metal hole and a fourth metal hole, wherein the first metal electrode and the second metal electrode are respectively located on both sides of the ridge waveguide of the lead zirconate titanate-based modulator 32; the third metal hole penetrates the surface of the lead zirconate titanate device region 3 to the side surface of the first metal electrode away from the bonding layer 2; and the fourth metal hole penetrates the surface of the lead zirconate titanate device region 3 to the side surface of the second metal electrode away from the bonding layer 2.

[0040] In some exemplary embodiments, the silicon device region 1 comprises: a first upper buried oxygen layer 8 located on the bonding layer 2; a top layer silicon layer 7 located on the side of the first upper buried oxygen layer 8 away from the bonding layer 2; a lower buried oxygen layer 6 located on the side of the top layer silicon layer 7 away from the bonding layer 2; and a silicon substrate 5 located on the side of the lower buried oxygen layer 6 away from the bonding layer 2, wherein the silicon coupler 11 and the silicon-based photodetector 12 are located in the top layer silicon layer 7.

[0041] In some exemplary embodiments, the lead zirconate titanate device region 3 comprises: a single-crystal lead zirconate titanate thin film layer 10 located on the bonding layer 2; and a second upper buried oxygen layer 11 located on the side of the single-crystal lead zirconate titanate thin film layer 10 away from the bonding layer 2, wherein the lead zirconate titanate coupler 31 and the lead zirconate titanate-based modulator 32 are located in the single-crystal lead zirconate titanate thin film layer 10.

[0042] In some exemplary embodiments, the material of the bonding layer 2 comprises one of aluminum nitride, silicon nitride, silicon dioxide or benzocyclobutene, and preferably, benzocyclobutene is used. The thickness of the bonding layer 2 is 600 nm-1000 nm.

[0043] Figure 2 A flowchart schematically showing a preparation method of a silicon / single-crystal thin film lead zirconate titanate heterogeneous integrated optical platform according to an embodiment of the present application is shown.

[0044] As shown in Figure 2 the preparation method of a silicon / single-crystal thin film lead zirconate titanate heterogeneous integrated optical platform according to an embodiment of the present application comprises steps S110-S160.

[0045] In step S110, a silicon wafer on an insulating substrate of a silicon device and a single-crystal thin-film lead zirconate titanate wafer are prepared; the silicon wafer on the insulating substrate of the silicon device comprises a silicon substrate 5, a lower buried oxygen layer 6, a top silicon layer 7, and a first upper buried oxygen layer 8 arranged in sequence, as shown in Figure 3 ; the single-crystal thin-film lead zirconate titanate wafer comprises a metal substrate 9, a single-crystal thin-film lead zirconate titanate layer 10, and a second upper buried oxygen layer 11 arranged in sequence, as shown in Figure 4 . Preferably, the material of the metal substrate 9 comprises one of platinum or titanium. Preferably, the thickness of the single-crystal thin-film lead zirconate titanate layer 10 is 500 nm-5000 nm.

[0046] In step S120, a complementary metal oxide semiconductor back-end process is used to prepare a silicon coupler 11 and a silicon-based photodetector 12 on the top silicon layer 7, and the structure after etching is shown in Figure 5 . The silicon-based photodetector 12 comprises a p-type doped region 121, an active region 122, an n-type doped region 123, an n-face electrode 125, and a p-face electrode 124; the p-type doped region 121 comprises a first surface, the first surface being located on a side of the p-type doped region 121 close to the bonding layer 2; the active region 122 is located on the first surface of the p-type doped region 121; the n-type doped region 123 is located on a side of the active region 122 away from the p-type doped region 121; the n-face electrode 125 is located on a side of the n-type doped region 123 away from the p-type doped region 121; and the p-face electrode 124 is located on the first surface of the p-type doped region 121.

[0047] In step S130, a spin coating process is used to apply a bonding buffer as the bonding layer 2 on a surface of the first upper buried oxygen layer 8 away from the top silicon layer 7.

[0048] In step S140, the single-crystal thin-film lead zirconate titanate layer 10 is peeled off from the single-crystal thin-film lead zirconate titanate wafer.

[0049] In step S150, a bonding process is used to transfer the peeled single-crystal thin-film lead zirconate titanate layer 10 to the bonding layer 2, and the structure after bonding is shown in Figure 6 .

[0050] In step S160, a complementary metal oxide semiconductor back-end process is used to etch a lead zirconate titanate coupler 31 and a lead zirconate titanate-based modulator 32 on the single-crystal thin-film lead zirconate titanate layer 10.

[0051] In some exemplary embodiments, for the lead electrode, the method further comprises: etching a first metal hole 41 through the lead zirconate titanate device region 3 and the bonding layer 2 to the p-face electrode 124 in a direction perpendicular to the first surface; and etching a second metal hole 42 through the lead zirconate titanate device region 3 and the bonding layer 2 to the n-face electrode 125 in a direction perpendicular to the first surface.

[0052] In some exemplary embodiments, the method further comprises: using a plasma enhanced chemical vapor deposition process to prepare a second upper buried oxygen layer 11 on the etched single crystal lead zirconate titanate film layer 10.

[0053] For example, S1, using a CMOS process flow on an SOI wafer to realize a photodetector, an optical waveguide and other silicon optical devices.

[0054] S2, using a spin coating process to coat 800nm of benzocyclobutene as a bonding layer 2 on the etched SOI wafer.

[0055] S3, peeling off the single crystal lead zirconate titanate film from the single crystal lead zirconate titanate film wafer, and transferring the single crystal lead zirconate titanate film to the bonding layer 2 using a bonding process to realize a single crystal lead zirconate titanate-SOI hetero-integrated wafer.

[0056] S4, using an electron beam exposure process to prepare a pattern of a ridge-type optical waveguide on the single crystal lead zirconate titanate film, and using inductively coupled plasma etching to etch a lead zirconate titanate ridge-type optical waveguide, with a single crystal lead zirconate titanate film thickness of 500nm and an etching depth of 350nm.

[0057] S5, using a plasma enhanced chemical vapor deposition process to prepare a second silicon dioxide upper buried oxygen layer 11 on the etched single crystal lead zirconate titanate film layer 10.

[0058] S6, using electron beam exposure and inductively coupled plasma technology to prepare an electrode, and using an electroplating process to prepare an electrode metal.

[0059] The present application is implemented by using a single crystal lead zirconate titanate film grown on a metal substrate 9 in combination with a wafer transfer bonding process to realize a silicon-single crystal film lead zirconate titanate hetero-integrated optical platform, to realize a CMOS-compatible hetero-integrated optical platform with receiving and transmitting functions, and to realize a silicon and single crystal lead zirconate titanate film optoelectronic fusion integrated system with commercial application foundation and prospects through a single crystal lead zirconate titanate film silicon-based hetero-integrated optical platform.

[0060] The above specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the present application, and it should be understood that the above are only specific embodiments of the present application and are not intended to limit the present application, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A silicon / single-crystal thin-film lead zirconate titanate heterogeneous integrated optical platform, characterized in that, The application relates to a silicon-zirconium titanate device, which comprises a silicon device region, a bonding layer and a zirconium titanate device region, wherein the silicon device region and the zirconium titanate device region are bonded on opposite sides of the bonding layer; the silicon device region comprises a silicon coupler and a silicon-based photodetector, wherein the silicon coupler and the silicon-based photodetector are made of a top silicon layer of silicon on the same insulating substrate; the zirconium titanate device region comprises a zirconium titanate coupler and a zirconium titanate-based modulator, wherein the zirconium titanate coupler and the zirconium titanate-based modulator are made of a single-crystal zirconium titanate film layer of the same zirconium titanate wafer; an optical field field evanescent wave coupling structure is formed between the silicon device region and the bonding layer; and an optical field field evanescent wave coupling structure is formed between the bonding layer and the zirconium titanate device region. The silicon-based photodetector comprises a p-type doped region, an active region, an n-type doped region, an n-face electrode and a p-face electrode, wherein the p-type doped region comprises a first surface located on a side of the p-type doped region close to the bonding layer; the active region is located on the first surface of the p-type doped region; the n-type doped region is located on a side of the active region away from the p-type doped region; the n-face electrode is located on a side of the n-type doped region away from the p-type doped region; and the p-face electrode is located on the first surface of the p-type doped region. The application further relates to a first metal hole and a second metal hole, wherein the first metal hole penetrates through the zirconium titanate device region and the bonding layer in a direction perpendicular to the first surface to the p-face electrode; the second metal hole penetrates through the zirconium titanate device region and the bonding layer in a direction perpendicular to the first surface to the n-face electrode; and the first metal hole and the second metal hole do not contact the zirconium titanate-based modulator. The silicon device region further comprises a first metal electrode, a second metal electrode, a third metal hole and a fourth metal hole, wherein the first metal electrode and the second metal electrode are respectively located on two sides of a ridge waveguide of the zirconium titanate-based modulator; the third metal hole penetrates through a surface of the zirconium titanate device region to a surface of the first metal electrode away from the bonding layer; and the fourth metal hole penetrates through a surface of the zirconium titanate device region to a surface of the second metal electrode away from the bonding layer. The silicon device region comprises a first upper buried oxygen layer, a top silicon layer, a lower buried oxygen layer and a silicon substrate, wherein the first upper buried oxygen layer is located on the bonding layer; the top silicon layer is located on a side of the first upper buried oxygen layer away from the bonding layer; the lower buried oxygen layer is located on a side of the top silicon layer away from the bonding layer; and the silicon substrate is located on a side of the lower buried oxygen layer away from the bonding layer, wherein the silicon coupler and the silicon-based photodetector are located on the top silicon layer. The zirconium titanate device region comprises a single-crystal zirconium titanate film layer and a second upper buried oxygen layer, wherein the single-crystal zirconium titanate film layer is located on the bonding layer; and the second upper buried oxygen layer is located on a side of the single-crystal zirconium titanate film layer away from the bonding layer, wherein the zirconium titanate coupler and the zirconium titanate-based modulator are located on the single-crystal zirconium titanate film layer. The material of the silicon-based photodetector comprises germanium.

2. The silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform of claim 1, wherein, ​ ​ ​ ​ ​ ​ 3. The silicon / monocrystalline thin film lead zirconate titanate heterogeneously integrated optical platform of claim 2, wherein, ​ ​ ​ ​ 4. The silicon / monocrystalline thin film lead zirconate titanate heterogeneously integrated optical platform of claim 1, wherein, ​ ​ ​ ​ 5. The silicon / monolithic thin film lead zirconate titanate heterogeneously integrated optical platform of claim 1, wherein, ​ ​ ​ ​ ​ ​ 6. The silicon / monocrystalline thin film lead zirconate titanate heterogeneously integrated optical platform of claim 1, wherein, ​ ​ ​ ​ 7. The silicon / monocrystalline thin film lead zirconate titanate heterogeneously integrated optical platform of claim 1, wherein, ​ The silicon-based photodetector comprises one of a silicon avalanche photodetector, a silicon-based nano-powder photodetector, or a backside metal reflection enhanced silicon-based photodetector.

8. A method for fabricating the silicon / monocrystalline thin film lead zirconate titanate hetero-integrated optical platform according to any one of claims 1 to 7, characterized in that, The method comprises: preparing a silicon wafer on a silicon device insulating substrate and a single-crystal thin-film lead zirconate titanate wafer, wherein the silicon wafer on the silicon device insulating substrate comprises a silicon substrate, a lower buried oxygen layer, a top silicon layer, and a first upper buried oxygen layer arranged in sequence; and the single-crystal thin-film lead zirconate titanate wafer comprises a metal substrate, a single-crystal thin-film lead zirconate titanate layer, and a second upper buried oxygen layer arranged in sequence; preparing a silicon coupler and a silicon-based photodetector on the top silicon layer by using a complementary metal oxide semiconductor back-end process; applying a spin coating process to coat a bonding buffer as a bonding layer on a surface of the first upper buried oxygen layer away from the top silicon layer; peeling off the single-crystal thin-film lead zirconate titanate layer from the single-crystal thin-film lead zirconate titanate wafer; transferring and bonding the peeled single-crystal thin-film lead zirconate titanate layer to the bonding layer by using a bonding process; and etching a lead zirconate titanate coupler and a lead zirconate titanate-based modulator on the single-crystal thin-film lead zirconate titanate layer by using a complementary metal oxide semiconductor back-end process.

9. The method of claim 8, wherein, The silicon-based photodetector comprises: a p-type doped region comprising a first surface, the first surface being located on a side of the p-type doped region close to the bonding layer; an active region located on the first surface of the p-type doped region; an n-type doped region located on a side of the active region away from the p-type doped region; an n-side electrode located on a side of the n-type doped region away from the p-type doped region; and a p-side electrode located on the first surface of the p-type doped region. The method further comprises: etching a first metal hole through the lead zirconate titanate device region and the bonding layer to the p-side electrode in a direction perpendicular to the first surface; etching a second metal hole through the lead zirconate titanate device region and the bonding layer to the n-side electrode in a direction perpendicular to the first surface, the lead zirconate titanate device region comprising the lead zirconate titanate coupler and the lead zirconate titanate-based modulator.

10. The method according to claim 8 or 9, characterized in that, The method further comprises: preparing a second upper buried oxygen layer on the etched single-crystal thin-film lead zirconate titanate layer by using a plasma-enhanced chemical vapor deposition process.

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