A write voltage control method and memory

Abstract

The application discloses a write voltage control method and a memory, and applies to the field of memories. The method provided by the application comprises the following steps: obtaining reference data corresponding to a reference resistance value; obtaining MTJ data corresponding to an MTJ resistance value; determining the relationship between the reference resistance value and the MTJ resistance value according to the relationship between the reference data and the MTJ data; and adjusting the reference resistance value according to the relationship between the reference resistance value and the MTJ resistance value, so as to adjust the write voltage according to the intensity of the adjustment of the reference resistance value. The application indirectly reflects the relationship between the default write voltage and the voltage during the actual data writing by comparing the reference resistance value and the MTJ resistance value, and adjusts the reference resistance value according to the relationship between the reference resistance value and the MTJ resistance value, thereby adjusting the write voltage. The method avoids the problem of data not being written due to the voltage during data writing being less than the write voltage, and the problem of the durability of the memory being reduced due to the voltage during data writing being greater than the write voltage.

Description

Technical Field

[0001] This application relates to the field of memory, and in particular to a write voltage control method and a memory. Background Technology

[0002] In recent years, Magnetic Tunnel Junction Memory (STT-MRAM) has emerged as a promising new type of memory. Besides its advantages of simple circuit design, fast read / write speeds, and unlimited erase / write cycles, its biggest advantage over traditional Dynamic Random Access Memory (DRAM) is its non-volatility—data is not lost when power is off. Magnetic tunnel junctions (MTJs) are crucial bits in MRAM, consisting of a free layer, a reference layer, and a dielectric layer between the two layers. By changing the magnetization direction of the free layer, the magnetization directions of the two magnetic layers can be made the same (low-resistance state) or opposite (high-resistance state), thus enabling data storage. However, due to process variations, the resistance of the MTJ fluctuates. Therefore, in practical applications, the voltage across the MTJ in the circuit will also fluctuate. If the same write voltage is used under these conditions, when the MTJ resistance is low, the voltage across the MTJ will be low, and this low voltage will be lower than the write voltage, meaning the data may not be stored in the memory. When the resistance of the MTJ is high, the voltage across the MTJ is large. This large voltage is greater than the write voltage. When writing data to the memory, it is easy to cause the memory to break down and greatly reduce the memory's durability.

[0003] In view of the above-mentioned technology, finding a write voltage control method is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] The purpose of this application is to provide a write voltage control method and a memory. This can solve the problems in the prior art where unstable MTJ resistors and fixed write voltage lead to reduced memory durability, or where data is not written to the memory.

[0005] To solve the above-mentioned technical problems, this application provides a write voltage control method, including:

[0006] Obtain the reference data corresponding to the resistance value of the reference resistor;

[0007] Obtain the MTJ data corresponding to the MTJ resistor value;

[0008] Based on the relationship between the reference data and the MTJ data, determine the relationship between the reference resistor value and the MTJ resistor value;

[0009] Based on the relationship between the reference resistor value and the MTJ resistor value, adjust the reference resistor value so that the writing voltage can be adjusted according to the degree of adjustment of the reference resistor value.

[0010] Preferably, obtaining the reference data corresponding to the resistance value of the reference resistor includes:

[0011] Obtain the reference voltage or reference current corresponding to the resistance value of the reference resistor;

[0012] The MTJ data corresponding to the MTJ resistor value includes:

[0013] Obtain the MTJ voltage or MTJ current corresponding to the MTJ resistor value.

[0014] Preferably, when the reference data is a reference voltage and the MTJ data is the MTJ voltage, determining the relationship between the reference resistor value and the MTJ resistor value based on the relationship between the reference data and the MTJ data includes:

[0015] When the reference voltage is greater than the MTJ voltage, it is determined that the reference resistor value is greater than the MTJ resistor value.

[0016] When the reference voltage is less than the MTJ voltage, the reference resistor value is determined to be less than the MTJ resistor value.

[0017] Preferably, the reference resistor value is adjusted according to the relationship between the reference resistor value and the MTJ resistor value, so that the write voltage can be adjusted according to the degree of adjustment of the reference resistor value, including:

[0018] When the reference resistor value is greater than the MTJ resistor value, the corresponding resistor switch is controlled to reduce the reference resistor value and increase the write voltage.

[0019] When the reference resistor value is less than the MTJ resistor value, the corresponding resistor switch is controlled to increase the reference resistor value and decrease the write voltage.

[0020] Preferably, when the reference data is the reference current and the MTJ data is the MTJ current, determining the relationship between the reference resistor value and the MTJ resistor value based on the relationship between the reference data and the MTJ data includes:

[0021] When the reference current is greater than the MTJ current, it is determined that the reference resistor value is less than the MTJ resistor value.

[0022] When the reference current is less than the MTJ current, the reference resistor value is determined to be greater than the MTJ resistor value.

[0023] To solve the above-mentioned technical problems, this application also provides a memory applied to the above-mentioned write voltage control method, including: an MTJ main array area and a write voltage control area; wherein, the write voltage control area includes: a reference resistor, an MTJ resistor and a write voltage adjustment circuit;

[0024] The reference resistor is connected to the write voltage adjustment circuit.

[0025] The MTJ resistor is connected to the write voltage regulation circuit;

[0026] The write voltage adjustment circuit is used to compare the resistance values ​​of the reference resistor and the MTJ resistor, and adjust the write voltage according to the relationship between the resistance values ​​of the reference resistor and the MTJ resistor.

[0027] Preferably, the write voltage regulation circuit includes: a resistor comparison circuit, a digital logic circuit, and a write voltage adjustment circuit;

[0028] The input terminals of the resistor comparison circuit are connected to the reference resistor and the MTJ resistor, respectively, and the output terminal of the resistor comparison circuit is connected to the input terminal of the digital logic circuit; it is used to compare the resistance values ​​of the reference resistor and the MTJ resistor.

[0029] The output of the digital logic circuit is connected to the input of the write voltage adjustment circuit to transmit the comparison result to the write voltage adjustment circuit so that the write voltage adjustment circuit can adjust the write voltage according to the comparison result.

[0030] Preferably, the reference resistor includes: a decoder, a base resistor, and N resistor units, wherein N≥1;

[0031] The basic resistor and N resistor units are connected sequentially.

[0032] The decoder is connected to the control terminal of each resistor unit to control whether each resistor unit is connected to the circuit.

[0033] Preferably, the resistor unit includes a unit resistor and a switch;

[0034] The input terminal of the unit resistor is connected to the base resistor or the output terminal of the previous unit resistor, and the output terminal of the unit resistor is connected to the input terminal of the switch and the input terminal of the next unit resistor.

[0035] The output terminal of the switch is connected to the output terminal of the next switch;

[0036] The control terminal of the switch is connected to the decoder.

[0037] Preferably, the MTJ resistor comprises M parallel MTJ array units; M ≥ 2;

[0038] The input terminals of each MTJ array unit are connected, and the output terminals of each MTJ array unit are connected. Each MTJ array unit is composed of n MTJs connected in series, where n ≥ 2.

[0039] This application provides a write voltage control method, comprising: acquiring reference data corresponding to the resistance value of a reference resistor; acquiring MTJ data corresponding to the resistance value of an MTJ resistor; determining the relationship between the resistance values ​​of the reference resistor and the MTJ resistor based on the relationship between the reference data and the MTJ data; and adjusting the resistance value of the reference resistor based on the relationship between the resistance values ​​of the reference resistor and the MTJ resistor, so as to adjust the write voltage according to the adjustment of the reference resistor value. In this application, the magnitude of the reference resistor value is used to indirectly reflect the magnitude of the write voltage, and the magnitude of the MTJ resistor value is used to indirectly reflect the magnitude of the voltage during data writing. The reference resistor value is adjustable, while the MTJ resistor value is not. Therefore, this application indirectly reflects the relationship between the write voltage and the voltage during data writing by comparing the resistance values ​​of the reference resistor and the MTJ resistor, and adjusts the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor, thereby indirectly adjusting the write voltage. This ensures that the write voltage and the voltage during data writing are as equal as possible, avoiding the problem of data not being written to memory when the voltage during data writing is less than the write voltage, and the problem of reduced memory durability when the voltage during data writing is greater than the write voltage. Attached Figure Description

[0040] To more clearly illustrate the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 Normal distribution diagram of MTJ resistance under different configurations;

[0042] Figure 2 A flowchart of a write voltage control method provided in an embodiment of this application;

[0043] Figure 3 This is the overall flow of the write voltage control method provided in the embodiments of this application;

[0044] Figure 4 A schematic diagram of the resistance comparison circuit provided in an embodiment of this application;

[0045] Figure 5 A schematic diagram of a digital logic circuit provided in an embodiment of this application;

[0046] Figure 6 A schematic diagram of the write voltage adjustment circuit provided in an embodiment of this application;

[0047] Figure 7 A schematic diagram of a reference resistor provided in an embodiment of this application;

[0048] Figure 8This is a schematic diagram of an MTJ resistor provided in an embodiment of this application. Detailed Implementation

[0049] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of this application.

[0050] The core of this application is to provide a write voltage control method and a memory.

[0051] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0052] In recent years, Magnetic Random Access Memory (STT-MRAM) has emerged as a promising new type of memory. Besides its advantages such as simple circuit design, fast read / write speeds, and unlimited erase / write cycles, its biggest advantage over traditional memories like DRAM is its non-volatility, meaning data is not lost when power is off.

[0053] Magnetic tunnel junctions (MTJs) are crucial bits in MRAM (Magnetic Random Access Arrays), consisting of a free layer (whose magnetization orientation can be changed by current or magnetic field), a reference layer (with a fixed magnetization orientation), and a dielectric layer between the two layers. By changing the magnetization direction of the free layer, the magnetization directions of the two magnetic layers are made the same (low-resistance state R). p Or the opposite (high resistance state R) Ap This enables data storage. However, due to process fluctuations, the resistance of the MTJ (Metal-Oxide-Jet) exhibits certain fluctuations, the range of which depends on the controllability of the manufacturing process. Typically, due to process fluctuations, such as... Figure 1 As shown, the resistance distribution of the MTJ is normal. Figure 1 Distribution shows R Ap and R p The distribution of resistance is such that the coefficient of variation of the parallel-state resistance distribution of the MTJ is 5%-8%. If the MTJ resistance is 4000Ω, considering the 3σ distribution, its resistance fluctuation range is ±600Ω to ±960Ω. Typically, the write condition for a chip is determined by ensuring a low write error rate. Due to process limitations, when the MTJ resistance fluctuates, the following problems arise: when R... p When the voltage fluctuates within the range of -600Ω to -960Ω, the fixed write voltage condition makes it easy for data not to be written to the chip. pWhen the voltage fluctuates within the range of 600Ω to 960Ω, the fixed write voltage condition can easily cause the memory to break down, resulting in reduced memory stability and reliability.

[0054] To address the aforementioned technical problems, this application provides a write voltage control method, such as... Figure 2 As shown, it includes the following steps:

[0055] S10: Obtain the reference data corresponding to the resistance value of the reference resistor.

[0056] In a specific embodiment, the reference resistor value indirectly reflects the magnitude of the write voltage in the memory; the larger the reference resistor value, the smaller the corresponding write voltage. Therefore, given the reference resistor value, the write voltage can be determined. When the reference resistor value is adjustable, the write voltage is also adjustable.

[0057] Generally, the resistance value is indirectly determined by obtaining the voltage or current. Therefore, this application indirectly determines the corresponding reference resistance value by obtaining the reference data corresponding to the reference resistance value. It should be noted that the reference data can be a reference voltage or a reference current; this application is not limited to either, and it can be set according to the user's needs.

[0058] S11: Obtain the MTJ data corresponding to the MTJ resistor value.

[0059] In a specific embodiment, the MTJ resistor value indirectly reflects the write voltage when data is written to the memory; the larger the MTJ resistor value, the smaller the data write voltage. Therefore, given the MTJ resistor value, the write voltage can be determined. Note that the MTJ resistor value is not adjustable, and similarly, the data write voltage is also not adjustable.

[0060] Similarly, this application indirectly determines the corresponding MTJ resistor value by obtaining the MTJ data corresponding to the MTJ resistor value. It should be noted that the MTJ data can be either MTJ voltage or MTJ current; this application is not limited to this and can set it according to the user's needs.

[0061] It should be noted that the resistance value of the MTJ resistor is the same as the resistance value of the MTJ in the MTJ array in the memory.

[0062] S12: Determine the relationship between the reference resistor value and the MTJ resistor value based on the relationship between the reference data and the MTJ data.

[0063] S13: Adjust the value of the reference resistor according to the relationship between the reference resistor value and the MTJ resistor value, so that the writing voltage can be adjusted according to the degree of adjustment of the reference resistor value.

[0064] In a specific embodiment, the relationship between the reference data and the MTJ data can be determined. The value of the reference resistor and the MTJ resistor can then be adjusted based on this relationship to regulate the write voltage. For example, if the reference data is a reference voltage and the MTJ data is the MTJ voltage, then when the reference voltage is greater than the MTJ voltage, the reference resistor value is determined to be greater than the MTJ resistor value. In this case, the reference resistor value needs to be reduced to match the MTJ resistor value. Since the reference resistor value indirectly reflects the write voltage, reducing the reference resistor value will correspondingly increase the write voltage.

[0065] It should be noted that this application allows for setting levels of adjustment intensity, with each adjustment representing an increase or decrease in intensity to reflect the degree of adjustment. However, this application is not limited to this; users can choose according to their needs.

[0066] This application provides a write voltage control method, comprising: acquiring reference data corresponding to the resistance value of a reference resistor; acquiring MTJ data corresponding to the resistance value of an MTJ resistor; determining the relationship between the resistance values ​​of the reference resistor and the MTJ resistor based on the relationship between the reference data and the MTJ data; and adjusting the resistance value of the reference resistor based on the relationship between the resistance values ​​of the reference resistor and the MTJ resistor, so as to adjust the write voltage according to the adjustment of the reference resistor value. In this application, the magnitude of the reference resistor value is used to indirectly reflect the magnitude of the write voltage, and the magnitude of the MTJ resistor value is used to indirectly reflect the magnitude of the voltage during data writing. The reference resistor value is adjustable, while the MTJ resistor value is not. Therefore, this application indirectly reflects the relationship between the write voltage and the voltage during data writing by comparing the resistance values ​​of the reference resistor and the MTJ resistor, and adjusts the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor, thereby indirectly adjusting the write voltage. This ensures that the write voltage and the voltage during data writing are as equal as possible, avoiding the problem of data not being written to memory when the voltage during data writing is less than the write voltage, and the problem of reduced memory durability when the voltage during data writing is greater than the write voltage.

[0067] Based on the above embodiments, as a preferred embodiment, obtaining the reference data corresponding to the reference resistor value includes:

[0068] Obtain the reference voltage or reference current corresponding to the resistance value of the reference resistor;

[0069] The MTJ data corresponding to the MTJ resistor value includes:

[0070] Obtain the MTJ voltage or MTJ current corresponding to the MTJ resistor value.

[0071] Accordingly, when the reference data is the reference voltage and the MTJ data is the MTJ voltage, the relationship between the reference resistor value and the MTJ resistor value is determined based on the relationship between the reference data and the MTJ data, including:

[0072] When the reference voltage is greater than the MTJ voltage, it is determined that the reference resistor value is greater than the MTJ resistor value.

[0073] When the reference voltage is less than the MTJ voltage, the reference resistor value is determined to be less than the MTJ resistor value.

[0074] Alternatively, when the reference data is the reference current and the MTJ data is the MTJ current, the relationship between the reference resistor value and the MTJ resistor value is determined based on the relationship between the reference data and the MTJ data, including:

[0075] When the reference current is greater than the MTJ current, it is determined that the reference resistor value is less than the MTJ resistor value.

[0076] When the reference current is less than the MTJ current, the reference resistor value is determined to be greater than the MTJ resistor value.

[0077] Therefore, based on this: according to the relationship between the reference resistor value and the MTJ resistor value, adjust the reference resistor value so that the write voltage can be adjusted according to the degree of adjustment of the reference resistor value, including:

[0078] When the reference resistor value is greater than the MTJ resistor value, the corresponding resistor switch is controlled to reduce the reference resistor value and increase the write voltage.

[0079] When the reference resistor value is less than the MTJ resistor value, the corresponding resistor switch is controlled to increase the reference resistor value and decrease the write voltage.

[0080] In specific embodiments, this application provides two methods for selecting reference data and MTJ data, as a preferred embodiment. The first method is the voltage method; where the reference data is the reference voltage and the MTJ data is the MTJ voltage. Accordingly, when the reference voltage is greater than the MTJ voltage, the reference resistor value is determined to be greater than the MTJ resistor value; when the reference voltage is less than the MTJ voltage, the reference resistor value is determined to be less than the MTJ resistor value. The second method is the current method; where the reference data is the reference current and the MTJ data is the MTJ current. Accordingly, when the reference current is greater than the MTJ current, the reference resistor value is determined to be less than the MTJ resistor value; when the reference current is less than the MTJ current, the reference resistor value is determined to be greater than the MTJ resistor value.

[0081] Accordingly, based on the relationship between the reference resistor value and the MTJ resistor value, the reference resistor value is adjusted so that the write voltage is adjusted according to the degree of adjustment of the reference resistor value: when the reference resistor value is greater than the MTJ resistor value, the corresponding resistor switch is controlled to reduce the reference resistor value until it is the same as the MTJ resistor value, while the write voltage is increased; when the reference resistor value is less than the MTJ resistor value, the corresponding resistor switch is controlled to increase the reference resistor value until it is the same as the MTJ resistor value, while the write voltage is decreased.

[0082] Based on the above embodiments, the overall flowchart of the write voltage control method is as follows: Figure 3 As shown, the process includes the following:

[0083] S20: Begin.

[0084] S21: Obtain the reference voltage / current of the reference resistor.

[0085] S22: Obtain the MTJ voltage / current of the MTJ resistor.

[0086] S23: Compare the reference voltage / current of the reference resistor with the MTJ voltage / current of the MTJ resistor.

[0087] S24: Determine whether the resistance value of the MTJ resistor is the same as that of the reference resistor.

[0088] S25: If so, the process ends.

[0089] S26: If not, determine whether the resistance value of MTJ is greater than the reference resistance value.

[0090] S27: If the resistance value of the MTJ resistor is greater than the resistance value of the reference resistor, then increase the resistance value of the reference resistor.

[0091] S28: Reduce write voltage.

[0092] S29: Re-evaluate whether the resistance value of MTJ resistor is the same as the resistance value of reference resistor. If yes, proceed to step S25; otherwise, proceed to step S27.

[0093] S30: If the MTJ resistor value is less than the reference resistor value, then reduce the reference resistor value.

[0094] S31: Increase write voltage.

[0095] S32: Re-evaluate whether the resistance value of MTJ resistor is the same as the resistance value of reference resistor. If yes, proceed to step S25; otherwise, proceed to step S30.

[0096] In this application, the value of the reference resistor is used to indirectly reflect the write voltage, and the value of the MTJ resistor is used to indirectly reflect the voltage during data writing. The reference resistor value is adjustable, while the MTJ resistor value is not. Therefore, this application indirectly reflects the relationship between the write voltage and the voltage during data writing by comparing the values ​​of the reference resistor and the MTJ resistor, and adjusts the reference resistor value in real time based on this relationship, thereby indirectly adjusting the write voltage. This ensures that the write voltage and the voltage during data writing are as equal as possible, avoiding the problem of data not being written to memory when the voltage during data writing is lower than the write voltage, and the problem of reduced memory durability when the voltage during data writing is higher than the write voltage.

[0097] To solve the above-mentioned technical problems, this application provides a memory applied to the above-mentioned write voltage control method, including: an MTJ main array area and a write voltage control area; wherein, the write voltage control area includes: a reference resistor, an MTJ resistor and a write voltage adjustment circuit;

[0098] The reference resistor is connected to the write voltage adjustment circuit.

[0099] The MTJ resistor is connected to the write voltage regulation circuit;

[0100] The write voltage adjustment circuit is used to compare the resistance values ​​of the reference resistor and the MTJ resistor, and adjust the write voltage according to the relationship between the resistance values ​​of the reference resistor and the MTJ resistor.

[0101] In a specific embodiment, the memory includes an MTJ main array area and a write voltage control area. The write voltage control area includes a reference resistor, an MTJ resistor, and a write voltage adjustment circuit. The reference resistor is connected to the write voltage adjustment circuit. Its resistance value indirectly reflects the magnitude of the write voltage. The reference resistor value can be manually adjusted, and adjusting the reference resistor value also adjusts the write voltage. The MTJ resistor is also connected to the write voltage adjustment circuit. Its resistance value reflects the resistance of the MTJ main array area within the memory. The MTJ resistor cannot be manually adjusted; it fluctuates only according to process requirements and the MTJ main array area. The write voltage adjustment circuit compares the reference resistor value and the MTJ resistor value, and adjusts the reference resistor value based on their relationship, thereby adjusting the write voltage to make the reference resistor value the same as the MTJ resistor value.

[0102] It should be noted that the specific forms of the reference resistor and the MTJ resistor are not limited in this application. As long as the requirement that the reference resistor can be adjusted and the MTJ resistor fluctuates with the MTJ main array area is met, this application is not limited and can be set according to the user's needs.

[0103] It should also be noted that the write voltage regulation circuit in this application embodiment is not limited to a specific structure. It only needs to meet the requirements and can be set by the user according to their needs.

[0104] This application provides a write-applied voltage-controlled memory, comprising: an MTJ main array area and a write voltage control area; wherein the write voltage control area includes: a reference resistor, an MTJ resistor, and a write voltage adjustment circuit; wherein the reference resistor is connected to the write voltage adjustment circuit; the MTJ resistor is also connected to the write voltage adjustment circuit; the write voltage adjustment circuit is used to compare the resistance value of the reference resistor and the resistance value of the MTJ resistor, and adjust the write voltage according to the relationship between the resistance values ​​of the reference resistor and the MTJ resistor. In this application, the resistance value of the reference resistor indirectly reflects the magnitude of the write voltage, and the resistance value of the MTJ resistor indirectly reflects the magnitude of the voltage during data writing. The resistance value of the reference resistor can be adjusted by the write voltage adjustment circuit, while the MTJ resistor is not adjustable. Therefore, this application indirectly reflects the relationship between the write voltage and the voltage during data writing by comparing the resistance values ​​of the reference resistor and the MTJ resistor, and adjusts the resistance value of the reference resistor according to the relationship between the resistance values ​​of the reference resistor and the MTJ resistor, thereby indirectly adjusting the write voltage. This ensures that the write voltage and the voltage during data writing are as equal as possible, avoiding the problem of data not being written to the memory when the voltage during data writing is lower than the write voltage, and the problem of reduced memory durability when the voltage during data writing is higher than the write voltage.

[0105] Based on the above embodiments, as a preferred embodiment, the write voltage regulation circuit includes: a resistance comparison circuit, a digital logic circuit, and a write voltage adjustment circuit;

[0106] The input terminals of the resistor comparison circuit are connected to the reference resistor and the MTJ resistor, respectively, and the output terminal of the resistor comparison circuit is connected to the input terminal of the digital logic circuit; it is used to compare the resistance values ​​of the reference resistor and the MTJ resistor.

[0107] The output of the digital logic circuit is connected to the input of the write voltage adjustment circuit to transmit the comparison result to the write voltage adjustment circuit so that the write voltage adjustment circuit can adjust the write voltage according to the comparison result.

[0108] In a specific embodiment, the write voltage adjustment circuit is used to compare the resistance values ​​of the reference resistor and the MTJ resistor, and adjust the write voltage according to the relationship between the resistance values ​​of the reference resistor and the MTJ resistor. Therefore, as a preferred embodiment, it includes a resistor comparison circuit, a digital logic circuit, and a write voltage adjustment circuit, and sets different adjustment levels for the reference resistor value. A schematic diagram of the resistor comparison circuit is shown below. Figure 4As shown in the diagram, R-ary is the MTJ resistor, R-ref is the reference resistor, SA is the comparator, VDD and VSS are power supply terminals, ENb is the enable terminal, VCLAMP and VREF are different voltage input terminals, the circuit also includes a latch and an XOR gate, SA-OUT is the output of the SA comparator, and CK is a pin of the latch. The comparator compares the MTJ resistor and the reference resistor, storing the result in the latch. A schematic diagram of the digital logic circuit is shown below. Figure 5 As shown, the digital logic circuit is essentially a digital logic unit. The input terminals of this unit are the output of the SA comparator and an input for a flag (SET-EN). The output terminals TRIM3 to TRIM0 are the control terminals for the write voltage adjustment circuit. The digital logic unit repeatedly checks if the flag SET-EN = 0 and SA-OUT = 0. If so, the write voltage adjustment level is increased by one step, meaning the reference resistance is decreased by one step. If SET-EN = 0 and SA-OUT = 1, the write voltage adjustment level is decreased by one step, meaning the reference resistance is increased by one step. If SET-EN = 1 (meaning that in two adjacent comparisons with different results, the previous increase was followed by a decrease, or vice versa, the resistance values ​​are considered similar, and SET-EN = 1), then the adjustment stops, and the process terminates. A schematic diagram of the write voltage adjustment circuit is shown below. Figure 6 As shown in the figure, TRIM3 to TRIM0 are related to... Figure 5 TRIM3 to TRIM0 are connected and used to adjust the write voltage. VWB, VWL, and VSS in the diagram are all voltage input terminals. The overall system is controlled by the adjustment range output by the digital logic circuit.

[0109] It should be noted that the resistor comparison circuit, digital logic circuit, and write voltage adjustment circuit provided in the embodiments of this application are only one possible implementation method, but are not limited to this only implementation method. Users can set them themselves according to their needs.

[0110] It should also be noted that, Figure 5 TRIM3 to TRIM0 are not only used for control Figure 6 The control terminal also uses a control reference resistor. Preferably, the reference resistor includes: a decoder, a base resistor, and N resistor units, where N ≥ 2, such as... Figure 7As shown, the base resistance is R, and the unit resistance is r1-rn. The base resistance and N resistance units are connected sequentially. The decoder is connected to the control terminals of each resistance unit (which can be indirectly understood as Trim-0 to Trim-n in the diagram) to control whether each resistance unit is connected to the circuit. Each resistance unit includes a unit resistor and a switch. The input terminal of the unit resistor is connected to the base resistance or the output terminal of the previous unit resistor; the output terminal of the unit resistor is connected to the input terminal of the switch and the input terminal of the next unit resistor; the output terminal of the switch is connected to the output terminal of the next switch; and the control terminal of the switch is connected to the decoder. In short, the reference resistor consists of a decoder, a base resistor, N unit resistors, and corresponding switches. By adjusting the input of the decoder, the switches corresponding to different unit resistors are opened, thus obtaining the reference resistor with the corresponding resistance value. There is at least one unit resistor.

[0111] The MTJ resistor consists of M parallel MTJ array units; M≥2; wherein the input terminals of each parallel MTJ array unit are connected, and the output terminals of each parallel MTJ array unit are connected, wherein each parallel MTJ array unit is composed of n MTJs connected in series, n≥2.

[0112] Based on the above embodiments, as a preferred embodiment, in specific embodiments, such as... Figure 8 As shown, the MTJ resistor is composed of a large number of parallel MTJ array units (MTJ1-MTJn), which ensures that even if one parallel MTJ array unit fails, it will not affect the overall use.

[0113] It should be noted that the reference resistor can be a poly resistor or a metal resistor, etc., and this application is not limited to this.

[0114] It should also be noted that the structure of the reference resistor and the structure of the MTJ resistor provided in the embodiments of this application are only one possible implementation method, but are not limited to this only implementation method. Users can set them themselves according to their needs.

[0115] This application provides a write-applied voltage-controlled memory, comprising: an MTJ main array area and a write voltage control area; wherein, the write voltage control area includes: a reference resistor, an MTJ resistor, and a write voltage adjustment circuit; wherein, the reference resistor is connected to the write voltage adjustment circuit; the MTJ resistor is connected to the write voltage adjustment circuit; the write voltage adjustment circuit includes: a resistor comparison circuit, a digital logic circuit, and a write voltage adjustment circuit; the input terminal of the resistor comparison circuit is connected to the reference resistor and the MTJ resistor respectively, and the output terminal of the resistor comparison circuit is connected to the input terminal of the digital logic circuit; it is used to compare the resistance values ​​of the reference resistor and the MTJ resistor; the output terminal of the digital logic circuit is connected to the input terminal of the write voltage adjustment circuit, used to transmit the comparison result to the write voltage adjustment circuit so that the write voltage adjustment circuit adjusts the write voltage according to the comparison result. In this application, the resistance value of the reference resistor is used to indirectly reflect the magnitude of the write voltage, and the resistance value of the MTJ resistor is used to indirectly reflect the magnitude of the voltage during data writing; wherein, the resistance value of the reference resistor can be adjusted by the write voltage adjustment circuit, while the MTJ resistor is not adjustable. Therefore, this application indirectly reflects the relationship between the write voltage and the voltage during data writing by comparing the values ​​of the reference resistor and the MTJ resistor. The write voltage is indirectly adjusted by adjusting the value of the reference resistor based on this relationship. This ensures that the write voltage and the voltage during data writing are as equal as possible, avoiding the problem of data not being written to memory when the voltage during data writing is lower than the write voltage, and the problem of reduced memory durability when the voltage during data writing is higher than the write voltage.

[0116] The foregoing has provided a detailed description of a write voltage control method and a memory provided in this application. The various embodiments in the specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

[0117] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

Claims

1. A write voltage control method, characterized by, The application is applied to a memory including a MTJ main array area and a write voltage control area; wherein the write voltage control area includes a reference resistance, a MTJ resistance, a resistance comparison circuit, a digital logic circuit and a write voltage adjustment circuit; the reference resistance and the MTJ resistance are connected with the resistance comparison circuit, and the resistance comparison circuit, the digital logic circuit and the write voltage adjustment circuit are connected in sequence, and the method includes: During a write operation, repeatedly performing the following closed-loop adjustment process until the reference resistance value corresponding to the reference resistance matches the MTJ resistance value corresponding to the MTJ resistance; acquiring reference data corresponding to the reference resistance value and MTJ data corresponding to the MTJ resistance value through the resistance comparison circuit, and determining the relationship between the reference resistance value and the MTJ resistance value according to the relationship between the reference data and the MTJ data; transmitting the relationship between the reference resistance value and the MTJ resistance value to the write voltage adjustment circuit through the digital logic circuit, so that the write voltage adjustment circuit adjusts the reference resistance value according to the relationship between the reference resistance value and the MTJ resistance value, and adjusts the write voltage according to the intensity of adjusting the reference resistance value.

2. The write voltage control method of claim 1, wherein, The acquiring reference data corresponding to the reference resistance value includes: acquiring a reference voltage or a reference current corresponding to the reference resistance value; The acquiring MTJ data corresponding to the MTJ resistance value includes: acquiring a MTJ voltage or a MTJ current corresponding to the MTJ resistance value.

3. The write voltage control method of claim 2, wherein, When the reference data is the reference voltage and the MTJ data is the MTJ voltage, the determining the relationship between the reference resistance value and the MTJ resistance value according to the relationship between the reference data and the MTJ data includes: when the reference voltage is greater than the MTJ voltage, it is determined that the reference resistance value is greater than the MTJ resistance value; when the reference voltage is less than the MTJ voltage, it is determined that the reference resistance value is less than the MTJ resistance value.

4. The write voltage control method of claim 3, wherein The adjusting the reference resistance value according to the relationship between the reference resistance value and the MTJ resistance value, so as to adjust the write voltage according to the intensity of adjusting the reference resistance value, includes: when the reference resistance value is greater than the MTJ resistance value, controlling the corresponding resistance switch to reduce the reference resistance value and increase the write voltage; when the reference resistance value is less than the MTJ resistance value, controlling the corresponding resistance switch to increase the reference resistance value and reduce the write voltage.

5. The write voltage control method of claim 2, wherein, When the reference data is the reference current and the MTJ data is the MTJ current, the determining the relationship between the reference resistance value and the MTJ resistance value according to the relationship between the reference data and the MTJ data includes: when the reference current is greater than the MTJ current, it is determined that the reference resistance value is less than the MTJ resistance value; when the reference current is less than the MTJ current, it is determined that the reference resistance value is greater than the MTJ resistance value.

6. A memory to which the write voltage control method of any one of claims 1 to 5 is applied, characterized by, including: The MTJ main array area and the write voltage control area; wherein, the write voltage control area comprises: reference resistance, MTJ resistance, resistance comparison circuit, digital logic circuit and write voltage adjustment circuit; Wherein, the reference resistance and the MTJ resistance are connected with the resistance comparison circuit, and the resistance comparison circuit, the digital logic circuit and the write voltage adjustment circuit are connected in sequence; The resistance comparison circuit obtains reference data corresponding to the reference resistance value and MTJ data corresponding to the MTJ resistance value, and determines the relationship between the reference resistance value and the MTJ resistance value according to the relationship between the reference data and the MTJ data. The digital logic circuit transmits the relationship between the reference resistance value and the MTJ resistance value to the write voltage adjustment circuit, so that the write voltage adjustment circuit adjusts the reference resistance value according to the relationship between the reference resistance value and the MTJ resistance value, and adjusts the write voltage according to the strength of adjusting the reference resistance value.

7. The memory of claim 6, wherein, The reference resistance comprises: decoder, base resistance and N resistance units, wherein, N≥1; Wherein, the base resistance and N resistance units are connected in sequence; The decoder is connected with the control end of each resistance unit respectively, for controlling whether each resistance unit is connected to the circuit.

8. The memory of claim 7, wherein, The resistance unit comprises unit resistance and switch; Wherein, the input end of the unit resistance is connected with the output end of the base resistance or the previous unit resistance, and the output end of the unit resistance is connected with the input end of the switch and the input end of the next unit resistance; The output end of the switch is connected with the output end of the next switch; The control end of the switch is connected with the decoder.

9. The memory of claim 6, wherein, The MTJ resistance comprises M parallel MTJ array units; wherein, M≥2; Wherein, the input end of each MTJ array unit is connected, and the output end of each MTJ array unit is connected; wherein, each MTJ array unit is composed of n MTJ in series, n≥2.

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