Flow uniformizing structure and process chamber of semiconductor process equipment

Abstract

The invention discloses a flow uniformizing structure and a process chamber of semiconductor process equipment, and relates to the field of semiconductors. A flow uniformizing structure is applied to a process chamber of semiconductor process equipment and comprises a first flow uniformizing part, a plurality of shielding parts and a plurality of elastic parts, the first flow uniformizing piece is provided with multiple circles of first air holes distributed from the center to the edge of the flow uniformizing structure. The multiple shielding pieces are distributed from the center to the edge of the flow uniformizing structure and located on one side of the air outlet of the first flow uniformizing piece, and each shielding piece corresponds to at least one circle of first air holes and can be close to or away from the first flow uniformizing piece in the axial direction of the flow uniformizing structure; each shielding piece is connected with at least one elastic piece, and the elastic pieces are used for enabling the shielding pieces to have the movement tendency of approaching the first flow uniformizing piece. The process chamber of the semiconductor process equipment comprises the flow uniformizing structure. The method at least can solve the problem that the flow field on the surface of the wafer has obvious difference in the radial direction.

Description

Technical Field

[0001] The present application belongs to the field of semiconductors, and specifically relates to a uniform flow structure and a process chamber of semiconductor process equipment. Background Art

[0002] With the development of integrated circuits, in the field of semiconductor manufacturing, the degumming rate of the degumming machine is becoming more and more important, which is related to the manufacturing efficiency and quality of the chip. The flow field distribution inside the degumming machine chamber (such as velocity field distribution, flow field distribution, pressure field distribution, etc.) significantly affects the degumming rate distribution, especially in the degumming process of large size (such as 12-inch wafers, etc.), the flow field on the wafer surface has obvious differences in the radial direction of the wafer, which leads to significantly different degumming rates between the center and edge areas of the wafer, which in turn has an adverse effect on the manufacturing efficiency and quality of the product. Summary of the invention

[0003] The purpose of the embodiments of the present application is to provide a uniform flow structure and a process chamber of a semiconductor process equipment, which can at least solve the problem that the flow field on the surface of the wafer has obvious differences in the radial direction.

[0004] In order to solve the above technical problems, this application is implemented as follows:

[0005] The embodiment of the present application provides a uniform flow structure, which is applied to a process chamber of a semiconductor process equipment, and the uniform flow structure includes: a first uniform flow member, a plurality of shielding members, and a plurality of elastic members;

[0006] The first flow-uniform member is provided with a plurality of circles of first air holes distributed from the center to the edge of the flow-uniform structure;

[0007] The plurality of shielding members are distributed from the center to the edge of the flow-uniform structure and are respectively located on one side of the air outlet of the first flow-uniform member. Each shielding member is arranged corresponding to at least one circle of the first air holes and can be close to or away from the first flow-uniform member in the axial direction of the flow-uniform structure.

[0008] Each of the shielding members is connected to at least one of the elastic members, and the elastic member is used to make the shielding member have a movement tendency to approach the first flow uniforming member.

[0009] The embodiment of the present application also provides a process chamber of a semiconductor process equipment, the process chamber comprising a cavity, a carrying device and the above-mentioned uniform flow structure;

[0010] The carrying device and the uniform flow structure are both arranged in the cavity, and the gas outlet end of the uniform flow structure is opposite to the surface of the carrying device used for carrying the wafer.

[0011] In the embodiment of the present application, under the elastic force of the elastic member, the shielding member can have a movement tendency close to the first flow equalizer. In the initial state, the shielding member fits with the first flow equalizer to block the first pore of the corresponding circle; in the process, due to the pressure difference on both sides of the axial direction of the flow equalizer structure, the shielding member has a movement tendency away from the first flow equalizer under the pressure difference. Thus, under the combined action of the pressure difference and the elastic force of the elastic member, at least part of the shielding members among the multiple shielding members will be separated from the first flow equalizer and form a gap with the first flow equalizer. Due to the existence of the gap, the flow field distribution of the corresponding area will be changed, so that the automatic adjustment of the flow field of the corresponding area can be achieved. Based on the above setting, by changing the relative position relationship between each of the multiple shielding members distributed along the center to the edge area of ​​the flow equalizer structure and the first flow equalizer, the automatic adjustment of the flow field of the corresponding area can be achieved, so that the degumming rate of each corresponding area of ​​the wafer can be affected to improve the difference in the degumming rate of each area, thereby improving the manufacturing efficiency and product quality of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a structural schematic diagram of a debonding chamber in the related art;

[0013] Figure 2 It is a structural schematic diagram of a flow equalizer in the related art;

[0014] Figure 3 It is a structural schematic diagram of the uniform flow structure disclosed in the embodiment of the present application;

[0015] Figure 4 for Figure 3 A partial enlarged view of the middle A;

[0016] Figure 5 A schematic diagram of a first form of shielding member disclosed in an embodiment of the present application;

[0017] Figure 6 A schematic diagram of a second form of shielding member disclosed in an embodiment of the present application;

[0018] Figure 7 A schematic diagram of the structure of the first flow equalizer, the second flow equalizer, the elastic member, the shielding member and the gasket disclosed in the embodiment of the present application;

[0019] Figure 8 This is a schematic diagram of the structure of the process chamber disclosed in the embodiment of the present application;

[0020] Fig. 9 A schematic diagram of velocity distribution in a process chamber before improvement disclosed in an embodiment of the present application;

[0021] Fig.10 This is a schematic diagram of the flow line distribution in the process chamber before the improvement disclosed in the embodiment of the present application;

[0022] Fig.11 A schematic diagram of the velocity distribution above the wafer before the improvement disclosed in the embodiment of the present application;

[0023] Fig.12 A schematic diagram of velocity distribution in an improved process chamber disclosed in an embodiment of the present application;

[0024] Fig.13 This is a schematic diagram of streamline distribution in the improved process chamber disclosed in the embodiment of the present application;

[0025] Fig.14 Schematic diagram of the improved velocity distribution above the wafer disclosed in the embodiment of the present application.

[0026] Description of reference numerals:

[0027] 100-uniform flow structure;

[0028] 110 - first flow-uniform member; 111 - first air hole;

[0029] 120 - second flow-uniform member; 121 - second air hole; 122 - groove; 123 - second guide cylinder;

[0030] 130-shielding member; 131-shielding unit; 132-first guide cylinder;

[0031] 140- elastic member;

[0032] 150-gasket;

[0033] 200- cavity;

[0034] 300-Carrying device. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0036] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0037] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0038] refer to Figure 1 A degumming chamber in the related art adopts a double-layer flow plate structure. Under the action of the molecular pump, the process gas mostly flows through the outer edge of the wafer, and the process gas flow rate at the outer edge of the wafer is faster, resulting in uneven flow field and velocity field above the wafer, and it is impossible to adjust the flow field and velocity field.

[0039] refer to Figure 2 The related art also provides a single-layer flow plate structure, in which the diameter of the flow holes gradually increases in the radial direction of the flow plate structure to improve the uniformity of the flow velocity above the wafer.

[0040] However, the flow plate structures in the above-mentioned prior art are unable to achieve adaptive adjustment of the flow field distribution, which limits the use scenarios of the flow plate structures. Based on this situation, the embodiment of the present application discloses a flow plate structure 100, which is applied to the process chamber of semiconductor process equipment and is used to uniformly distribute the process gas entering the inner cavity of the process chamber, so as to improve the uniformity of gas distribution on the wafer surface, thereby ensuring product quality. Figures 3 to 8 The disclosed flow uniforming structure 100 includes a first flow uniforming member 110 , a plurality of shielding members 130 and a plurality of elastic members 140 .

[0041] Among them, the first flow equalizer 110 is a core component that plays a role in equalizing the flow of the process gas. Under the action of the first flow equalizer 110, the process gas can be fully diffused in the inner cavity of the process chamber, thereby ensuring that the process gas can be distributed to the surface of the wafer for process treatment in the process chamber. In some embodiments, the first flow equalizer 110 is provided with a plurality of circles of first air holes 111 distributed from the center to the edge of the flow equalizer structure 100. During the process, the process gas can flow to the surface of the wafer through the plurality of circles of first air holes 111, so as to react on the surface of the wafer.

[0042] Exemplarily, the first flow equalizer 110 may be a disc-shaped component adapted to the shape of the wafer. In this case, a plurality of circles of first air holes 111 may be arranged in sequence along the radial direction of the first flow equalizer 110 to disperse the process gas radially toward the wafer surface.

[0043] In addition, each circle of first air holes 111 may include a plurality of first air holes 111 , and the plurality of first air holes 111 may be distributed in a circular shape, such as evenly distributed, so as to improve the distribution uniformity of the process gas.

[0044] A plurality of shielding members 130 are distributed from the center to the edge of the flow-leveling structure 100, and are respectively located on one side of the air outlet of the first flow-leveling member 110. Each shielding member 130 is arranged corresponding to at least one circle of first air holes 111, and can be close to or away from the first flow-leveling member 110 in the axial direction of the flow-leveling structure 100. Based on this arrangement, a plurality of shielding members 130 can shield multiple circles of first air holes 111, and during the process, at least part of the plurality of shielding members 130 can also be away from the first flow-leveling member 110 to release the shielding effect on the corresponding circle of first air holes 111, and the size of the gap between at least part of the shielding members 130 and the first flow-leveling member 110 can be changed, so that the flow field in the corresponding area from the center to the edge of the flow-leveling structure 100 can be automatically adjusted.

[0045] refer to Figure 3 and Figure 4 In some more specific embodiments, in the direction from the center to the edge of the uniform flow structure 100, the first uniform flow member 110 may be provided with three circles of first air holes 111, namely: the first air holes 111 of the center circle, the first air holes 111 of the middle circle, and the first air holes 111 of the edge circle; accordingly, there may be three shielding members 130, namely: the shielding member 130 of the center, the shielding member 130 of the middle, and the shielding member 130 of the edge. In this way, the shielding member 130 of the center is opposite to the first air holes 111 of the center circle, the shielding member 130 of the middle is opposite to the first air holes 111 of the center circle, and the shielding member 130 of the edge is opposite to the first air holes 111 of the edge circle, so as to respectively cover or release the first air holes 111 of the corresponding circles.

[0046] In the embodiment of the present application, the flow field may be a velocity field, a flow field or a pressure field, etc., which may be determined according to actual working conditions and is not specifically limited here.

[0047] In some embodiments, the shielding member 130 is disposed on one axial side of the first flow uniforming member 110 and close to the gas outlet end of the first air hole 111 , so that the gas outlet end of the first air hole 111 can be blocked or released by the shielding member 130 .

[0048] For example, each shielding member 130 may be an annular structure, and this shape may be adapted to the distribution of the first air holes 111, so as to shield at least one circle of the first air holes 111. Each shielding member 130 may be arranged opposite to a circle of the first air holes 111, and in this case, each shielding member 130 may shield one circle of the first air holes 111; of course, each shielding member 130 may also be arranged opposite to two or more circles of the first air holes 111, and in this case, each shielding member 130 may shield two or more circles of the first air holes 111.

[0049] It should be noted here that, considering that during the process, the inner cavity of the process chamber needs to be evacuated by a vacuum pump (or molecular pump), in this case, a certain pressure difference is formed on both sides of the axial direction of the uniform flow structure 100. Under the action of the pressure difference, the process gas on the side of the uniform flow structure 100 away from the vacuum pump will flow to the side close to the vacuum pump through the first air hole 111. During this process, the process gas will react on the surface of the wafer in the inner cavity of the process chamber to perform process treatment on the wafer surface, and the exhaust gas generated in the process will be pumped out of the inner cavity of the process chamber through the vacuum pump.

[0050] Based on the above situation, under the action of the pressure difference, the process gas will exert an extrusion effect on the surface of the shielding member 130 facing the first air hole 111 after passing through the first air hole 111, so that the shielding member 130 can be separated from the first flow uniforming member 110 and the shielding effect on the first air hole 111 can be released, so that the process gas can flow through the first air hole 111 to the corresponding area on the wafer surface, thereby realizing the process treatment of the wafer.

[0051] However, since the edge of the wafer is closer to the vacuum pump and the center of the wafer is farther away from the vacuum pump than the edge in the flow path of the process gas, during the process, there will be differences in the pressure difference from the center area to the edge area of ​​the wafer, which will cause uneven flow field distribution from the center area to the edge area of ​​the wafer surface, which will adversely affect the process results.

[0052] In order to improve the uniformity of the flow field distribution in each area of ​​the wafer surface, in the embodiment of the present application, each shielding member 130 is connected to at least one elastic member 140, and the elastic member 140 is used to make the shielding member 130 have a movement tendency close to the first flow equalizer 110, that is, under the action of the elastic member 140, the shielding member 130 can block the first air hole 111 of the corresponding circle, and at the same time, the pressure difference will make the shielding member 130 have a movement tendency away from the first flow equalizer 110. Therefore, under the joint action of the pressure difference and the elastic force of the elastic member 140, at least part of the shielding member 130 can form a gap with the first flow equalizer 110, and the gap between the shielding member 130 and the first flow equalizer 110 at different positions is not completely the same, so that the flow field distribution at various locations from the center to the edge of the flow equalizer structure 100 can be adaptively adjusted, and then the flow field distribution at each corresponding area of ​​the wafer surface is realized, so as to improve the uniformity of the flow field distribution on the wafer surface.

[0053] Exemplarily, one end of the elastic member 140 is connected to the shielding member 130, and the other end is fixed. For example, the other end of the elastic member 140 can be fixedly connected to the first flow equalizer 110. Of course, the first flow equalizer 110 can also be connected to other fixed structures, and the other end of the elastic member 140 is connected to the fixed structure. Regardless of which method is used, the elastic member 140 can be fixed, and it can be ensured that the elastic member 140 can apply elastic force to the shielding member 130, so that the shielding member 130 can have a movement tendency close to the first flow equalizer 110.

[0054] In the embodiment of the present application, under the elastic force of the elastic member 140, the shielding member 130 can have a movement tendency close to the first flow equalizer 110. In the initial state, the shielding member 130 fits the first flow equalizer 110 to block the first air hole 111 of the corresponding circle. During the process, since there is a certain pressure difference on both sides of the axial direction of the flow equalizer structure 100, the shielding member 130 has a movement tendency away from the first flow equalizer 110 under the action of the pressure difference. Therefore, under the combined action of the pressure difference and the elastic force of the elastic member 140, at least some of the shielding members 130 among the multiple shielding members 130 will be separated from the first flow equalizer 110, and a gap will be formed between the shielding members 130 and the first flow equalizer 110. Due to the existence of the gap, the distribution of the flow field in the corresponding area will be changed, so that the automatic adjustment of the flow field in the corresponding area can be achieved.

[0055] Based on the above settings, by changing the relative position relationship between each of the multiple shielding members 130 distributed from the center to the edge area of ​​the uniform flow structure 100 and the first uniform flow member 110, automatic adjustment of the flow field in the corresponding area is achieved, thereby affecting the degumming rate of each corresponding area of ​​the wafer, so as to increase the difference in the degumming rate of each area, thereby improving the manufacturing efficiency and product quality of the product.

[0056] In the embodiment of the present application, in the initial state, the multiple shielding members 130 are all in contact with the first flow equalizing member 110. In this case, the process has not yet been carried out, and the first air hole 111 does not need to be opened. At this time, under the elastic force of the elastic member 140, the multiple circles of the first air holes 111 can be shielded by the multiple shielding members 130. It should be noted here that the initial state can be before the process. At this time, the vacuum pump is not turned on, and the pressure difference on both sides of the axial direction of the flow equalizing structure 100 can be zero or relatively small. In this case, the pressure difference is not enough to overcome the elastic force of the elastic member 140 and cause the shielding member 130 to separate from the first flow equalizing member 110.

[0057] In the process state, the distances between the multiple shielding members 130 and the first flow equalizing member 110 are different. It should be noted here that, in order to ensure that the process gas flows in each area of ​​the wafer surface, the multiple circles of first air holes 111 of the first flow equalizing member 110 can be opened during the process, that is, the multiple shielding members 130 are separated from the first flow equalizing member 110 to ensure that the process gas can flow through the multiple circles of first air holes 111.

[0058] Furthermore, considering the flow field distribution on the wafer surface, there are also different pressure differences in the uniform flow structure 100 from its center to the edge area. Under the combined effect of the pressure difference and the elastic member 140 connected to each shielding member 130, it is ensured that there is a difference in the distance between each of the multiple shielding members 130 and the first uniform flow member 110, so that the flow field distribution in the areas corresponding to the multiple shielding members 130 is different, so as to achieve the purpose of automatically adjusting the flow field distribution in each area, thereby improving the uniformity of the flow field distribution in each area on the wafer surface.

[0059] In some embodiments, the flow field may be a velocity field or a pressure field. Considering that the vacuum pump is close to the edge area of ​​the wafer, the flow velocity or pressure of the process gas near the edge area of ​​the wafer is faster or higher, while the flow velocity or pressure near the center area of ​​the wafer is slower or lower, that is, the flow velocity or pressure changes from small to large along the center area to the edge area of ​​the wafer.

[0060] In order to further balance the velocity field distribution or pressure field distribution from the center area to the edge area of ​​the wafer, it is necessary to increase the flow rate or pressure at the center area of ​​the wafer and reduce the flow rate or pressure at the edge area of ​​the wafer through the flow equalization structure 100. Based on this, in the embodiment of the present application, in the process state, along the center to edge direction of the flow equalization structure 100, the distance (or gap) between each of the multiple shielding members 130 and the first flow equalization member 110 increases successively, so that the process gas flow rate or pressure can be adaptively increased by a relatively small distance, and the process gas flow rate or pressure can be adaptively reduced by a relatively large distance, so that the distribution of the velocity field or pressure field can be balanced in the direction from the center area to the edge area of ​​the wafer, so as to improve the uniformity of the velocity field or pressure field at each area of ​​the wafer.

[0061] In other embodiments, the flow field may be a flow field. Considering that the vacuum pump is close to the edge area of ​​the wafer, the flow rate of the process gas near the edge area of ​​the wafer is larger, while the flow rate near the center area of ​​the wafer is smaller, that is, the flow rate increases from the center area to the edge area of ​​the wafer.

[0062] In order to further balance the flow field distribution from the center area to the edge area of ​​the wafer, it is necessary to increase the flow at the center area of ​​the wafer and reduce the flow at the edge area of ​​the wafer through the flow equalization structure 100. Based on this, in the embodiment of the present application, in the process state, along the center to edge direction of the flow equalization structure 100, the distance (or gap) between each of the multiple shielding members 130 and the first flow equalization member 110 is reduced successively, so that the flow of the process gas can be adaptively increased by a relatively large distance, and the flow of the process gas can be adaptively reduced by a relatively small distance, so that the distribution of the flow field can be balanced in the direction from the center area to the edge area of ​​the wafer, so as to improve the uniformity of the flow field at each area of ​​the wafer.

[0063] In the related art, most of the process gas passes through the edge area of ​​the wafer, and a small part of the process gas passes through the center area of ​​the wafer, which easily causes waste of process gas and leads to low utilization rate of process gas. The embodiment of the present application can reduce the flow rate of process gas in the edge area of ​​the wafer accordingly, and increase the flow rate of process gas in the center area of ​​the wafer, thereby reducing the waste of process gas and improving the utilization rate of process gas.

[0064] In order to adaptively adjust the distance (or gap) between each shielding member 130 and the first flow-distributing member 110, the number of elastic members 140 connected to each of the multiple shielding members 130 is not completely equal, wherein the number of elastic members 140 connected to each of the multiple shielding members 130 may be unequal, or the number of elastic members 140 connected to each of a part of the shielding members 130 may be equal, while the number of elastic members 140 connected to each of the other part of the shielding members 130 may be unequal, which may be set specifically according to actual working conditions. Based on this, by adjusting the initial compression amount of the multiple elastic members 140, the sensitivity of the shielding member 130 to the pressure difference can be changed.

[0065] In some embodiments, when the flow field is a velocity field or a pressure field, it can be known from the above content that along the center to edge direction of the uniform flow structure 100, the distance (or gap) between each of the multiple shielding members 130 and the first uniform flow member 110 increases successively, and the two sides of the shielding member 130 are respectively affected by the process gas pressure difference and the elastic member 140. If the velocity field or pressure field at the center area of ​​the wafer is to be relatively increased, it is necessary to relatively reduce the distance between the shielding member 130 and the first uniform flow member 110 near the center area of ​​the uniform flow structure 100. Thus, when the pressure difference remains unchanged, In this case, it is necessary to increase the elastic force of the elastic member 140 so that the shielding member 130 at the center area and the first flow equalizer 110 are balanced at a smaller distance; on the contrary, if the velocity field or pressure field at the edge area of ​​the wafer is to be relatively reduced, it is necessary to relatively increase the distance between the shielding member 130 and the first flow equalizer 110 near the edge area of ​​the flow equalizer structure 100. Therefore, when the pressure difference remains unchanged, it is necessary to reduce the elastic force of the elastic member 140 so that the shielding member 130 at the edge area and the first flow equalizer 110 are balanced at a larger distance.

[0066] Based on the above situation, along the center to edge direction of the uniform flow structure 100, the number of elastic members 140 connected to each of the multiple shielding members 130 gradually decreases, so that the distribution of the velocity field or pressure field can be balanced in the direction from the center area to the edge area of ​​the wafer, so as to improve the uniformity of the velocity field or pressure field in each area of ​​the wafer.

[0067] In other embodiments, when the flow field is a flow field, it can be known from the above content that along the center to edge direction of the uniform flow structure 100, the distance (or gap) between each of the plurality of shielding members 130 and the first uniform flow member 110 is reduced successively, and the two sides of the shielding member 130 are respectively affected by the process gas pressure difference and the elastic member 140. If the flow field at the center area of ​​the wafer is to be relatively increased, it is necessary to relatively increase the distance between the shielding member 130 and the first uniform flow member 110 near the center area of ​​the uniform flow structure 100. Thus, under the condition of constant pressure difference, In this case, it is necessary to reduce the elastic force of the elastic member 140 so that the shielding member 130 at the center area and the first flow equalizer 110 are balanced at a larger distance; on the contrary, if the flow field at the edge area of ​​the wafer is to be relatively reduced, it is necessary to relatively reduce the distance between the shielding member 130 and the first flow equalizer 110 near the edge area of ​​the flow equalizer structure 100. Therefore, under the condition that the pressure difference remains unchanged, it is necessary to increase the elastic effect of the elastic member 140 so that the shielding member 130 at the edge area and the first flow equalizer 110 are balanced at a smaller distance.

[0068] Based on the above situation, in an embodiment of the present application, along the center to edge direction of the uniform flow structure 100, the number of elastic members 140 connected to each of the multiple shielding members 130 gradually increases, so that the distribution of the velocity field or pressure field can be balanced in the direction from the center area to the edge area of ​​the wafer, so as to improve the uniformity of the velocity field or pressure field in each area of ​​the wafer.

[0069] refer to Figure 5 In some more specific embodiments, the shielding member 130 may be a circular plate, and the end of each shielding member 130 away from the first flow equalizing member 110 may be connected to a plurality of elastic members 140, and the plurality of elastic members 140 are distributed along the circumference of the shielding member 130. For example, the number of elastic members 140 connected to each shielding member 130 may be the same, and the plurality of elastic members 140 connected to each shielding member 130 may be evenly distributed along the circumference of the shielding member 130, so as to improve the force uniformity of each shielding member 130.

[0070] In addition, considering that the sizes of the multiple shielding members 130 gradually increase from the center to the edge area of ​​the uniform flow structure 100, in order to ensure the uniformity of force at various locations of the shielding members 130, the number of elastic members 140 connected to each of the multiple shielding members 130 may also be different. Specifically, the number of elastic members 140 connected to each of the multiple shielding members 130 may increase successively from the center to the edge area of ​​the uniform flow structure 100 to ensure the uniformity of force at various locations of each shielding member 130.

[0071] In order to further improve the regulation ability of the flow field, refer to Figure 6In some embodiments, each shielding member 130 may include a plurality of shielding units 131 distributed along the circumferential direction, and the end surface of each shielding unit 131 facing away from the first flow-distributing member 110 is connected to at least one elastic member 140. Based on the above configuration, further division of each shielding member 130 can reduce the area of ​​the separate adjustment region of each shielding member 130, so that the sensitivity of flow field adjustment can be improved, thereby correspondingly improving the adjustment capability of the flow field.

[0072] Exemplarily, each shielding unit 131 may be connected to one elastic member 140 , two elastic members 140 or more elastic members 140 , which may be specifically set according to actual needs.

[0073] Furthermore, among the multiple shielding members 130, the multiple shielding units 131 of any shielding member 130 are arranged correspondingly with the multiple shielding units 131 of the adjacent shielding member 130. Based on this, the flow field at the local area of ​​the multiple shielding members 130 can be adjusted by the multiple correspondingly arranged shielding units 131 to improve the adjustment capability.

[0074] Exemplarily, each shielding unit 131 can be divided into six shielding units 131. Of course, it can also be other numbers. Theoretically, the more divisions there are, the stronger the ability to regulate the flow field is. In the embodiments of the present application, there is no specific limitation on the division situation.

[0075] In the embodiment of the present application, the force balance of the shielding member 130 can also be changed by the difference in the compression amount of each elastic member 140 in the initial state, so as to adapt to the distribution of the flow field from the center area to the edge area of ​​the wafer. Among them, in the initial state, the compression amount of the elastic members 140 connected to each of the multiple shielding members 130 may not be exactly the same. Based on this, by adjusting the initial compression amount of the multiple elastic members 140, the sensitivity of the shielding member 130 to the pressure difference can be changed.

[0076] In some embodiments, when the flow field is a velocity field or a pressure field, it can be known from the above content that along the center to edge direction of the uniform flow structure 100, the distance (or gap) between each of the multiple shielding members 130 and the first uniform flow member 110 increases successively, and the two sides of the shielding member 130 are respectively affected by the process gas pressure difference and the elastic member 140. If the velocity field or pressure field at the center area of ​​the wafer is to be relatively increased, it is necessary to relatively reduce the distance between the shielding member 130 and the first uniform flow member 110 near the center area of ​​the uniform flow structure 100. Thus, when the pressure difference remains unchanged, In this case, it is necessary to increase the elastic force of the elastic member 140 so that the shielding member 130 at the center area and the first flow equalizer 110 are balanced at a smaller distance; on the contrary, if the velocity field or pressure field at the edge area of ​​the wafer is to be relatively reduced, it is necessary to relatively increase the distance between the shielding member 130 and the first flow equalizer 110 near the edge area of ​​the flow equalizer structure 100. Therefore, when the pressure difference remains unchanged, it is necessary to reduce the elastic force of the elastic member 140 so that the shielding member 130 at the edge area and the first flow equalizer 110 are balanced at a larger distance.

[0077] Based on the above situation, along the center to edge direction of the uniform flow structure 100, in the initial state, the compression amount of each of the multiple elastic members 140 gradually decreases, so that the distribution of the velocity field or pressure field can be balanced in the direction from the center area to the edge area of ​​the wafer, so as to improve the uniformity of the velocity field or pressure field in each area of ​​the wafer.

[0078] In other embodiments, when the flow field is a flow field, it can be known from the above content that along the center to edge direction of the uniform flow structure 100, the distance (or gap) between each of the plurality of shielding members 130 and the first uniform flow member 110 is reduced successively, and the two sides of the shielding member 130 are respectively affected by the process gas pressure difference and the elastic member 140. If the flow field at the center area of ​​the wafer is to be relatively increased, it is necessary to relatively increase the distance between the shielding member 130 and the first uniform flow member 110 near the center area of ​​the uniform flow structure 100. Thus, under the condition of constant pressure difference, In this case, it is necessary to reduce the elastic force of the elastic member 140 so that the shielding member 130 at the center area and the first flow equalizer 110 are balanced at a larger distance; on the contrary, if the flow field at the edge area of ​​the wafer is to be relatively reduced, it is necessary to relatively reduce the distance between the shielding member 130 and the first flow equalizer 110 near the edge area of ​​the flow equalizer structure 100. Therefore, under the condition that the pressure difference remains unchanged, it is necessary to increase the elastic effect of the elastic member 140 so that the shielding member 130 at the edge area and the first flow equalizer 110 are balanced at a smaller distance.

[0079] Based on the above situation, in an embodiment of the present application, along the center to edge direction of the uniform flow structure 100, in the initial state, the compression amount of each of the multiple elastic members 140 can be gradually increased, so that the distribution of the velocity field or pressure field can be balanced in the direction from the center area to the edge area of ​​the wafer, so as to improve the uniformity of the velocity field or pressure field in each area of ​​the wafer.

[0080] It should be noted that the force balance of the shielding member 130 can also be changed by the difference in elastic coefficients of the multiple elastic members 140, so as to adapt to the distribution of the flow field from the center area to the edge area of ​​the wafer. Among them, the principle of the influence of the elastic coefficient on the force balance of the shielding member 130 can be referred to the relevant content in the compression amount of the elastic member 140 in the initial state mentioned above, which will not be repeated here.

[0081] In order to further improve the flow uniformity effect, the flow uniformity structure 100 may further include a second flow uniformity member 120. Figure 3 , Figure 4 and Figure 7 The second flow equalizer 120 and the first flow equalizer 110 are arranged at an axial interval in the flow equalizer structure 100, so that a gas transmission space can be formed between the first flow equalizer 110 and the second flow equalizer 120; at the same time, the second flow equalizer 120 is provided with a plurality of second air holes 121, and the plurality of second air holes 121 are used to communicate with the inner cavity of the process chamber and to communicate with the gas transmission space, that is, the gas transmission space can be connected with the inner cavity of the process chamber through the plurality of second air holes 121, so that the process gas can flow from the gas transmission space into the inner cavity of the process chamber through the plurality of second air holes 121, and react on the surface of the wafer in the inner cavity.

[0082] Based on the above settings, the first flow equalizer 110 can achieve a primary flow equalization effect on the process gas, while the second flow equalizer 120 can achieve a secondary flow equalization effect on the process gas, so that the process gas can be fully diffused when entering the inner cavity of the process chamber, so as to increase the contact area between the process gas and the wafer surface, thereby promoting reaction efficiency and reaction uniformity.

[0083] Multiple shielding members 130 are respectively located between the first flow equalizer 110 and the second flow equalizer 120, and multiple elastic members 140 are respectively connected to the second flow equalizer 120. In this way, the second flow equalizer 120 can provide an installation basis for the multiple elastic members 140 to ensure that the ends of the multiple elastic members 140 that are away from the shielding member 130 can be relatively fixed; and, the multiple elastic members 140 can apply elastic force to the corresponding shielding members 130 so that the multiple shielding members 130 have a movement tendency to approach the first flow equalizer 110.

[0084] Specifically, in the non-process state, under the elastic force of the elastic member 140, the multiple shielding members 130 are respectively attached to the end faces of the first flow equalizer 110, and the first air holes 111 of the corresponding circles are blocked; in the process state, as the pressure difference on both sides of the axial direction of the flow equalizer structure 100 gradually increases, when the effect of the local pressure difference is greater than the elastic force of the elastic member 140, the shielding members 130 in the corresponding area will be pushed open, that is, a certain gap will be formed between the shielding members 130 in the corresponding area and the end faces of the first flow equalizer 110. At this time, the process gas can enter the gas delivery space through the first air holes 111 at the corresponding area, and then pass through the second flow equalizer 120 through the multiple second air holes 121 and flow into the inner cavity of the process chamber, so that the process gas can reach the wafer surface and react.

[0085] In order to realize the installation of the elastic member 140, a plurality of grooves 122 may be provided at one end of the second flow equalizer 120 facing the first flow equalizer 110, and the ends of the plurality of elastic members 140 facing away from the shielding member 130 are respectively provided in the grooves 122, so that the bottom wall of the groove 122 can support the corresponding elastic member 140, so that the elastic member 140 can exert elastic force on the corresponding shielding member 130, and the side wall of the groove 122 can also limit the side of the elastic member 140, so as to prevent the elastic member 140 from twisting, bending, etc. during the force compression process, thereby ensuring the stability of the elastic member 140 under the force compression. It should be noted here that the above-mentioned groove 122 can also be regarded as a blind hole.

[0086] In other embodiments, the end of the elastic member 140 facing away from the shielding member 130 can also be directly fixed to the second flow uniform member 120, for example, by welding, bonding, riveting, clamping, screwing, etc., to ensure the firmness and stability of the installation of the elastic member 140.

[0087] refer to Figure 4In some embodiments, the end surface of each shielding member 130 facing the second flow equalizer 120 may be provided with a first guide cylinder 132 extending toward the second flow equalizer 120, and correspondingly, a second guide cylinder 123 may be provided in each groove 122, wherein the first guide cylinder 132 and the second guide cylinder 123 are respectively sleeved on the outside of the elastic member 140, and the outer wall of the first guide cylinder 132 is slidably connected to the inner wall of the corresponding second guide cylinder 123. Based on this arrangement, the sliding fit between the outer wall of the first guide cylinder 132 and the inner wall of the second guide cylinder 123 can ensure the moving accuracy of the shielding member 130 close to or away from the first flow-leveling member 110; and the inner wall of the first guide cylinder 132 and the inner wall of the second guide cylinder 123 can also limit the elastic member 140 respectively to prevent the elastic member 140 from twisting, bending, etc., and ensure the stability of the elastic member 140. At the same time, the first guide cylinder 132 and the second guide cylinder 123 can also protect the elastic member 140, so that the elastic member 140 is separated from the process gas, thereby effectively preventing the process gas from corroding the elastic member 140, and further improving the service life of the elastic member 140. Exemplarily, the first guide cylinder 132 can be fixed to the end face of the shielding member 130 facing the second flow-leveling member 120 by welding, bonding, etc., to ensure the firmness and stability of the first guide cylinder 132.

[0088] Considering that the distances between the plurality of shielding members 130 and the first flow homogenizing member 110 are different under the process state, in order to adapt to the flow field distribution on the wafer surface, the initial elastic force applied to each of the plurality of shielding members 130 can be adaptively adjusted, and the initial elastic force can be adjusted in the following manner:

[0089] refer to Figure 7 In some embodiments, a gasket 150 may be provided in at least some of the grooves 122 among the multiple grooves 122. The gasket 150 is located between the bottom wall of the second guide cylinder 123 and the bottom wall of the groove 122. The relative position of the second guide cylinder 123 in the groove 122 can be adjusted by the gasket 150, and the initial compression amount of the elastic member 140 can be further adjusted by changing the position of the second guide cylinder 123, so as to adaptively adjust the initial elastic force applied to each of the multiple shielding members 130.

[0090] In other embodiments, a gasket 150 may be provided in at least part of the second guide cylinder 123, and one end of the elastic member 140 that is away from the shielding member 130 abuts against the gasket 150. In this way, the initial compression amount of the elastic member 140 can also be adjusted by adding the gasket 150, so as to facilitate adaptive adjustment of the initial elastic force applied to each of the multiple shielding members 130, thereby adapting to the flow field distribution on the wafer surface. In this case, the initial conditions of each of the multiple elastic members 140 can be the same, such as the initial elastic coefficient, initial length, etc., so that the initial compression amounts of each of the multiple elastic members 140 can be different by adding the gasket 150, thereby resulting in different elastic forces applied to the corresponding shielding members 130.

[0091] Exemplarily, the number of gaskets 150 in the groove 122 may be one or more, which may be selected based on actual working conditions; in addition, the thickness of the gasket 150 may be set based on actual working conditions.

[0092] In some other embodiments, the initial lengths of the multiple elastic members 140 may be changed. When the initial elastic coefficients are the same, the elastic forces exerted by the multiple elastic members 140 on the corresponding shielding member 130 may be different by changing the initial lengths.

[0093] In some other embodiments, the initial elastic coefficients of the multiple elastic members 140 may be changed. When the initial lengths and initial compression amounts are the same, the elastic forces exerted by the multiple elastic members 140 on the corresponding shielding members 130 may be different by changing the initial elastic coefficients.

[0094] It should be noted that in the above embodiments, the pressure difference effect and the elastic force of the elastic member 140 are much greater than the gravity effect of the shielding member 130, so the gravity effect of the shielding member 130 can be ignored. Of course, when higher accuracy is required, the gravity of the shielding member 130 can also be taken into account to improve the accuracy of the data.

[0095] In some embodiments, along the direction from the center to the edge of the uniform flow structure 100, the second uniform flow member 120 may be provided with multiple circles of second air holes 121, and the multiple circles of second air holes 121 are staggered with the multiple circles of first air holes 111. For example, at least one circle of second air holes 121 may correspond between two adjacent circles of first air holes 111. Based on the above arrangement, the process gas flowing into the first uniform flow member 110 and the second uniform flow member 120 through the first air holes 111 can be fully diffused between the two firstly, and then the process gas can flow into the inner cavity of the process chamber through the multiple circles of second air holes 121, so as to facilitate the diffusion of the process gas to the surface of the wafer, thereby increasing the contact area with the surface of the wafer, so as to improve the process uniformity and process efficiency.

[0096] Exemplarily, the multiple first air holes 111 in each circle can be distributed according to a circular trajectory, and the multiple second air holes 121 in each circle can also be distributed according to a circular trajectory. Moreover, each circle of second air holes 121 can be arranged on the outside of the previous circle of first air holes 111, and the next circle of first air holes 111 can be arranged on the outside of each circle of second air holes 121. Such a circular distribution is used to improve the diffusion degree of the process gas and further increase the contact area between the process gas and the wafer surface.

[0097] refer to Figures 3 to 8 Based on the above-mentioned uniform flow structure 100, the embodiment of the present application also discloses a process chamber of a semiconductor process equipment, which can perform a process reaction on the wafer in its inner cavity, wherein the process chamber can be a degumming chamber, of course, it can also be other chambers, which are not specifically limited here.

[0098] The disclosed process chamber includes a cavity 200, a carrier device 300 and the above-mentioned uniform flow structure 100, wherein the carrier device 300 and the uniform flow structure 100 are both arranged in the cavity 200, and the gas outlet end of the uniform flow structure 100 is opposite to the surface of the carrier device 300 for carrying wafers.

[0099] Based on the above configuration, the process gas entering the chamber 200 through the uniform flow structure 100 can be fully diffused on the surface of the carrier 300 to react on the surface of the wafer carried by the carrier 300, thereby achieving process treatment of the wafer.

[0100] Of course, the semiconductor process equipment may also include other components, such as a plasma generating device, a vacuum pump, etc. The specific structure and working principle thereof may refer to relevant technologies and will not be elaborated in detail here.

[0101] In the embodiment of the present application, the distribution of the flow field in the process chamber of the semiconductor process equipment using the above-mentioned uniform flow structure is optimized. Figures 9 to 14 .in, Figures 9 to 11 To improve the velocity and streamline distribution in the front process chamber and the velocity distribution diagram above the wafer, Figure 12 to Figure 14 The figure shows the velocity and streamline distribution in the process chamber after the improvement, and the velocity distribution above the wafer. It can be seen from the figure that the airflow distribution in the edge area and the center area of ​​the process chamber after the improvement is more uniform, and the airflow velocity above the wafer is reduced (for example, before the improvement, the velocity in the edge area reached about 1.2, and after the improvement, the velocity in the edge area reached about 0.96), which is conducive to prolonging the residence time of the gas above the wafer, which is conducive to prolonging the reaction time and making the reaction more complete.

[0102] In summary, the embodiments of the present application can utilize the balance relationship between the pressure difference and the elastic force of the elastic member 140 to achieve the purpose of automatically adjusting the flow field, so as to improve the uniformity of the flow field distribution on the wafer surface, thereby improving the process uniformity and process efficiency; in addition, the sensitivity of the shielding member 130 to the pressure difference can be changed by adjusting the initial compression amount of the elastic member 140, the number of elastic members 140, etc., so as to adapt to the difference in pressure difference at different positions.

[0103] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A uniform flow structure, applied to a process chamber of a semiconductor process equipment, characterized in that: The flow-uniform structure (100) comprises: a first flow-uniform member (110), a plurality of shielding members (130) and a plurality of elastic members (140); The first flow-uniform member (110) is provided with a plurality of circles of first air holes (111) distributed from the center to the edge of the flow-uniform structure (100); A plurality of shielding members (130) are distributed from the center to the edge of the flow-leveling structure (100), and are respectively located on one side of the air outlet of the first flow-leveling member (110); each shielding member (130) is arranged corresponding to at least one circle of the first air holes (111), and can be close to or away from the first flow-leveling member (110) in the axial direction of the flow-leveling structure (100); Each of the shielding members (130) is connected to at least one of the elastic members (140), and the elastic member (140) is used to enable the shielding member (130) to have a movement tendency to approach the first flow-distributing member (110).

2. The flow uniformity structure according to claim 1, characterized in that: In an initial state, the plurality of shielding members (130) are all in contact with the first flow-distributing member (110); In a process state, there is a difference in the distance between each of the plurality of shielding members (130) and the first flow uniforming member (110).

3. The flow-uniform structure according to claim 2, characterized in that: Along the direction from the center to the edge of the flow uniforming structure (100), the distance between each of the plurality of shielding members (130) and the first flow uniforming member (110) increases or decreases in sequence.

4. The flow uniformity structure according to claim 1, characterized in that: The number of elastic members (140) connected to each of the plurality of shielding members (130) is not completely equal.

5. The flow-uniform structure according to claim 1, characterized in that: In an initial state, the compression amounts of the elastic members (140) to which the plurality of shielding members (130) are respectively connected are not completely the same.

6. The flow uniformity structure according to claim 1, characterized in that: The shielding member (130) is a circular ring plate, and the end surface of each shielding member (130) facing away from the first flow equalizing member (110) is connected to a plurality of elastic members (140), and the plurality of elastic members (140) are distributed along the circumference of the shielding member (130).

7. The flow uniformity structure according to claim 6, characterized in that: Each shielding member (130) comprises a plurality of shielding units (131) distributed along the circumferential direction, and an end surface of each shielding unit (131) facing away from the first flow leveling member (110) is connected to at least one of the elastic members (140).

8. The flow-uniform structure according to claim 7, characterized in that: Among the plurality of shielding members (130), the plurality of shielding units (131) of any one of the shielding members (130) are arranged correspondingly to the plurality of shielding units (131) of an adjacent shielding member (130).

9. The flow uniforming structure according to any one of claims 1 to 8, characterized in that: The flow equalizing structure (100) further comprises a second flow equalizing member (120), the second flow equalizing member (120) and the first flow equalizing member (110) being arranged at intervals in the axial direction of the flow equalizing structure (100), a plurality of shielding members (130) being respectively located between the first flow equalizing member (110) and the second flow equalizing member (120), and a plurality of elastic members (140) being respectively connected to the second flow equalizing member (120); The second flow uniforming member (120) is provided with a plurality of second air holes (121), and the plurality of second air holes (121) are used to communicate with the inner cavity of the process chamber.

10. The flow uniformity structure according to claim 9, characterized in that: A plurality of grooves (122) are provided at one end of the second flow equalizer (120) facing the first flow equalizer (110); One end of each of the plurality of elastic members (140) facing away from the shielding member (130) is disposed in a corresponding groove (122).

11. The flow uniformity structure according to claim 10, characterized in that: The end surface of each shielding member (130) facing the second flow equalizer (120) is provided with a first guide cylinder (132) extending toward the second flow equalizer (120), and each groove (122) is provided with a second guide cylinder (123); The first guide cylinder (132) and the second guide cylinder (123) are respectively sleeved on the outside of the elastic member (140), and the outer wall of the first guide cylinder (132) is slidably connected to the inner wall of the corresponding second guide cylinder (123).

12. The flow uniformity structure according to claim 11, characterized in that: Among the plurality of grooves (122), at least some of the grooves (122) are provided with gaskets (150), and the gaskets (150) are located between the bottom wall of the second guide cylinder (123) and the bottom wall of the groove (122); Alternatively, a gasket (150) is provided in at least a portion of the second guide cylinder (123), and one end of the elastic member (140) facing away from the shielding member (130) abuts against the gasket (150).

13. The flow uniformity structure according to claim 9, characterized in that: Along the direction from the center to the edge of the flow uniforming structure (100), the second flow uniforming member (120) is provided with a plurality of circles of the second air holes (121), and the plurality of circles of the second air holes (121) and the plurality of circles of the first air holes (111) are arranged in a staggered manner.

14. A process chamber of a semiconductor process equipment, characterized in that: The process chamber comprises a chamber (200), a carrying device (300) and a uniform flow structure (100) as claimed in any one of claims 1 to 13; The carrying device (300) and the uniform flow structure (100) are both arranged in the cavity (200), and the gas outlet end of the uniform flow structure (100) is opposite to the surface of the carrying device (300) used for carrying wafers.

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