Semiconductor manufacturing apparatus and showerhead coating method using same

Abstract

The present invention relates to a semiconductor manufacturing apparatus and a showerhead coating method using the same, the semiconductor manufacturing apparatus including an index block, a processing block, and a substrate transfer block, the substrate processing apparatus including: a chamber having a processing space therein; a substrate supporting unit which is disposed in the processing space, supports a substrate coated with a precursor, and includes a first heating member for heating; a gas supply unit for supplying a gas to the processing space; a plasma generation unit for converting the supplied gas into plasma; a shower head for supplying the supplied gas to the processing space; and a control unit for controlling the gas supply unit and the plasma generation unit, the control unit controlling the first heating means so as to heat the substrate supported by the substrate support unit and vaporize the precursor applied to the substrate, thereby forming a coating layer on the showerhead.

Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing device and a nozzle coating method using the same, and more particularly to a nozzle coating method for coating a nozzle by coating a precursor on a substrate and vaporizing the coated precursor. Background Art

[0002] In the manufacturing process of semiconductor devices or liquid crystal display devices, plasma is generated in a chamber that is reduced to a predetermined vacuum pressure, and the plasma is applied to a substrate (for example, a semiconductor wafer or a glass substrate for a liquid crystal display device), and a predetermined substrate processing such as a vapor deposition process, an etching process, and an ashing process is performed.

[0003] A showerhead is generally provided in an apparatus for processing a substrate using plasma. The showerhead may be used as an upper electrode, and may generate plasma in the processing space inside the chamber by generating a high-frequency electric field while receiving a supply of gas required for a process and uniformly spraying the gas into the processing space inside the chamber.

[0004] In such a process using plasma, the shower head is continuously exposed to the plasma, thereby causing problems such as the surface of the shower head being etched by the plasma, the volume of the chamber processing space increasing, and the size of the gas supply hole of the shower head changing. Summary of the invention

[0005] The present invention is used to solve the problems of the prior art and to provide a semiconductor manufacturing device for preventing the showerhead from being damaged by plasma and a showerhead coating method using the same.

[0006] The problems to be solved by the present invention are not limited to the problems mentioned above, and still other problems not mentioned will be clearly understood by those skilled in the art from the following description.

[0007] It can be that according to an embodiment of the present invention, a semiconductor manufacturing device includes: an index block, including a carrier for accommodating a substrate coated with a precursor; a processing block, including a substrate processing device for performing a processing process for the substrate; and a substrate transfer block, including a substrate transfer robot for moving in or out of the substrate, the substrate processing device includes: a chamber, having a processing space inside; a substrate support unit, which is arranged in the processing space and supports the substrate coated with the precursor, and includes a first heating component for heating; a gas supply unit, which is used to supply gas to the processing space; a plasma generating unit, which is used to plasmatize the supplied gas; a nozzle, which is used to supply the supplied gas to the processing space; and a control unit, which is used to control the gas supply unit and the plasma generating unit, the control unit controls the first heating component to heat the substrate supported by the substrate support unit to vaporize the precursor coated on the substrate, thereby forming a coating on the nozzle.

[0008] In one embodiment, the shower head may include a second heating component.

[0009] In one embodiment, the control unit may control the second heating component of the shower head to apply heat to the coating formed on the shower head.

[0010] In one embodiment, the first heating component of the substrate supporting unit and the second heating component of the shower head may apply a temperature of 200° C. to 500° C. to the substrate and the coating formed on the shower head, respectively.

[0011] In one embodiment, the coating formed on the shower head may be a silicon film or a silicon oxide film.

[0012] In one embodiment, the substrate supporting unit may further include a driving portion and a lifting pin assembly for lifting the substrate.

[0013] In one embodiment, the control unit may control the driving unit to cause the substrate coated with the precursor to rise toward the nozzle, and control the first heating component to vaporize the precursor coated on the substrate rising toward the nozzle.

[0014] In one embodiment, the precursor may include silane or siloxane.

[0015] In one embodiment, the precursor containing the silane may be a precursor represented by the following [Chemical Formula 1]:

[0016] [Chemical formula 1]

[0017]

[0018] The R 1 , R 2 , R 3 and R 4 Each of is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, and n has a range of 1≤n≤2000.

[0019] In one embodiment, the precursor containing the siloxane may be a precursor represented by the following [Chemical Formula 2]:

[0020] [Chemical formula 2]

[0021]

[0022] The R 1 , R 2 , R 3 and R 4 Each of is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, and n has a range of 1≤n≤2000.

[0023] It can be that the nozzle coating method according to one embodiment of the present invention includes: a precursor coating step, coating a precursor on a substrate; a configuration step, configuring the substrate coated with the precursor in a processing space inside a chamber; a heat and pressure applying step, applying heat and pressure to the substrate coated with the precursor; a coating forming step, vaporizing the precursor to form a coating on a nozzle configured opposite to the substrate; and a film quality improving step, heating the nozzle to apply heat to the coating.

[0024] In one embodiment, the precursor in the precursor coating step may include silane or siloxane.

[0025] In one embodiment, the precursor containing the silane may be a precursor represented by the following [Chemical Formula 1]:

[0026] [Chemical formula 1]

[0027]

[0028] R 1 , R 2 , R 3 and R 4 Each of is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, and n has a range of 1≤n≤2000.

[0029] In one embodiment, the precursor containing the siloxane may be a precursor represented by the following [Chemical Formula 2]:

[0030] [Chemical formula 2]

[0031]

[0032] The R 1 , R 2 , R 3 and R 4 Each of is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, and n has a range of 1≤n≤2000.

[0033] In one embodiment, the configuring step may include: a moving step of moving the substrate coated with the precursor to a position opposite to the nozzle.

[0034] In one embodiment, in the heat and pressure applying step, the heat applied to the substrate may have a temperature range of 200° C. to 500° C., and the pressure applied to the substrate may have a pressure range of normal pressure to 0.01 Torr.

[0035] In one embodiment, the coating layer formed in the coating layer forming step may be a silicon film or a silicon oxide film.

[0036] In one embodiment, the coating layer may have a thickness ranging from 1 μm to 1 mm.

[0037] In one embodiment, the film quality improvement step may be to apply a temperature of 200° C. to 500° C. to the coating layer.

[0038] The semiconductor manufacturing equipment according to one embodiment of the present invention includes: a carrier accommodating a substrate coated with a precursor; an index block including a loading port for accommodating the carrier accommodating the substrate and an index frame having an index robot for taking out the substrate from the carrier placed on the loading port; a load lock chamber for temporarily storing the substrate transferred from the index robot; a processing block including a substrate processing device for performing a processing process for the substrate; and a substrate transfer block including a substrate transfer robot for moving the substrate transferred from the load lock chamber into the substrate processing device or moving the substrate moved out of the substrate processing device into the load lock chamber, wherein the substrate processing device includes: a chamber having a processing space inside; a substrate support unit configured in the processing space and Supporting the substrate coated with the precursor received from the substrate transfer robot; a first heating component for heating the substrate coated with the precursor; a gas supply unit for supplying gas to the processing space; a plasma generating unit for plasmatizing the supplied gas; a nozzle for supplying the supplied gas to the processing space; a driving unit for causing the substrate supporting unit or the substrate supported by the substrate supporting unit to rise in the direction of the nozzle; and a control unit, if the substrate coated with the precursor is transferred to the substrate supporting unit, the control unit controls the driving unit so that the substrate coated with the precursor rises in the direction of the nozzle, and controls the first heating component so that the precursor coated on the substrate is vaporized to form a coating on the nozzle.

[0039] According to the present invention, a coating layer may be formed on a shower head by coating a substrate with a precursor and vaporizing the coated precursor.

[0040] In addition, by forming a coating on the shower head, damage to the shower head due to plasma can be prevented.

[0041] However, the effects of the present invention are not limited to the above-mentioned effects, and still another effect not mentioned will be clearly understood from the following description by a person having ordinary knowledge in the technical field to which the present invention belongs. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 FIG. 1 is a diagram showing a substrate coating apparatus according to an embodiment of the present invention.

[0043] Figure 2 FIG. 1 is a diagram showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.

[0044] Figure 3 FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0045] Figure 4 as well as Figure 5is a flow chart showing a nozzle coating method according to an embodiment of the present invention.

[0046] Figure 6 FIG. 1 is a diagram showing a substrate processing apparatus according to still another embodiment of the present invention.

[0047] Figure 7 is a flow chart showing a nozzle coating method according to yet another embodiment of the present invention.

[0048] (Explanation of Reference Numerals)

[0049] 1: Semiconductor manufacturing equipment

[0050] 10: Index block

[0051] 20: Processing Block

[0052] 30: Substrate transfer block

[0053] 200: Substrate coating device

[0054] 100: Substrate processing device

[0055] 1000: Chamber

[0056] 2000: Substrate support unit

[0057] 3000: Lifting pin assembly

[0058] 4000: Plasma generation unit

[0059] 4100: Sprinkler

[0060] 5000: Gas supply unit

[0061] 6000: Control unit DETAILED DESCRIPTION

[0062] Hereinafter, with reference to the accompanying drawings, an embodiment of the present invention will be described in detail so that a person with common knowledge in the technical field to which the present invention belongs can easily implement it. However, the present invention can be implemented in various different forms and is not limited to the embodiments described herein.

[0063] When describing one embodiment of the present invention, if the specific description of the relevant well-known function or structure is judged to be likely to unnecessarily obscure the essence of the present invention, its specific description will be omitted, and the parts with similar functions and effects will use the same figure marks throughout the entire drawings.

[0064] At least part of the terms used in the specification is defined in consideration of the functions in the specification and may be changed according to the intention of the user or operator, custom, etc. Therefore, the terms should be interpreted based on the contents throughout the entire specification.

[0065] In addition, in this specification, unless otherwise specified, the singular also includes the plural. In the specification, when it is said that any constituent element is included, other constituent elements are not excluded unless there is a special description to the contrary, which means that other constituent elements may be included.

[0066] On the other hand, in the drawings, the size or shape of components, the thickness of lines, and the like may be slightly exaggerated for easier understanding.

[0067] Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the attached drawings, the same or corresponding components regardless of the figure numbers will be given the same figure numbers, and repeated descriptions thereof will be omitted.

[0068] Figure 1 FIG. 1 is a diagram showing a substrate coating apparatus according to an embodiment of the present invention.

[0069] Reference Figure 1 The substrate coating apparatus 200 according to an embodiment of the present invention is a spin coating apparatus and may include a housing 210 , a processing container 220 , a substrate supporting unit 230 , and a spray unit 240 .

[0070] The housing 210 may be provided in a quadrilateral cylindrical shape having a processing space inside. An opening 212 may be formed in a side wall of the housing 210. The opening 212 may function as a passage for the substrate W to enter and exit the interior of the housing 210. Such an opening 212 may be provided with a door configured to open and close the opening 212.

[0071] The processing container 220 may provide a processing space inside and may have a cup shape with an upper opening. An exhaust port 222 for discharging the recovered liquid and an exhaust port 224 for discharging the gas in the processing container 220 may be formed on the bottom surface of the processing container 220 for receiving a liquid such as a pre-wet solution or a photoresist from the substrate W. The processing container 220 may be configured to be movable up and down.

[0072] The substrate support unit 230 may be disposed in the internal processing space of the processing container 220. The substrate support unit 230 may include a rotating chuck 232 in order to rotate the substrate W. The rotating chuck 232 may be provided by a substrate support member that supports the substrate W. The rotating chuck 232 may be provided in a circular plate shape. As an example, the rotating chuck 232 may include a plurality of chuck pins 234 for clamping the side of the substrate W. As an example, the chuck pins 234 may be arranged at a certain interval along the edge of the substrate W, and the number, shape and position of such chuck pins 234 may be variously changed.

[0073] The rotary chuck 232 can be configured to rotate at a desired speed by a rotary drive member 236, which can be, for example, a motor that can change the rotation speed. In addition, the rotary drive member 236 is provided with a lifting and moving mechanism such as a cylinder, and the rotary chuck 232 can be configured to be able to rise and fall by the lifting and moving mechanism.

[0074] The spray unit 240 may include a nozzle 242 for supplying the processing liquid to the substrate and a nozzle driving part 244 for driving the nozzle 242 .

[0075] The nozzle driving unit 244 can move the nozzle 242 to a process position and a standby position. Here, the process position is a position where the nozzle 242 faces the substrate W supported by the spin chuck 232, and the standby position is a position where the nozzle 242 is away from the process position.

[0076] The nozzle 242 may supply a precursor to the substrate W. The precursor according to an embodiment of the present invention may be a precursor including silane or siloxane. The precursor including silane is represented by the following [Chemical Formula 1].

[0077] [Chemical formula 1]

[0078]

[0079] At this time, R 1 , R 2 , R 3 and R 4 Each of may be independently selected from the group consisting of H, OH, and C1-C6 alkyl or alkenyl. In addition, n may have a range of 1≤n≤2000.

[0080] The precursor including siloxane is represented by the following [Chemical Formula 2].

[0081] [Chemical formula 2]

[0082]

[0083] R 1 , R 2 , R3 and R 4 Each of may be independently selected from the group consisting of H, OH, and C1-C6 alkyl or alkenyl. In addition, n may have a range of 1≤n≤2000.

[0084] In the present invention, a spin coating device is used to coat the substrate with the precursor, but the present invention is not limited thereto. For example, in the case of a precursor with low viscosity, the substrate W may be processed to have a space inside, and then the precursor may be poured into the inner space to fill the space and then placed in the processing space of the substrate processing device 100 described later.

[0085] According to an embodiment of the present invention, the substrate W coated with the precursor by the substrate coating apparatus 200 may be moved to a substrate processing apparatus 100 of the semiconductor manufacturing equipment 1 described later.

[0086] Figure 2 2 is a diagram showing a structure of a semiconductor manufacturing apparatus according to an embodiment of the present invention. According to an embodiment of the present invention, a substrate W coated with a precursor by a substrate coating apparatus 200 may be introduced into a semiconductor manufacturing apparatus 1 .

[0087] Reference Figure 2 The semiconductor manufacturing equipment 1 may include an index block 10, a processing block 20, and a substrate transfer block 30 for transferring substrates between the index block 10 and the processing block 20. According to an embodiment of the present invention, the index block 10 and the processing block 20 may be sequentially arranged in a row.

[0088] The index block 10 includes a loading port 12 where a carrier C accommodating a substrate is placed, and an index frame 14 for taking out a substrate from the carrier C placed on the loading port 12 or for moving a substrate processed from the carrier C. The loading port 12 is located on the opposite side of the processing block 20 with reference to the index frame 14. The carrier C accommodating a substrate can be placed on the loading port 12, and a plurality of the carriers C accommodating the substrate can be provided.

[0089] An index robot 144 may be provided inside the index frame 14. The index robot 144 may be provided to be movable along the rail 142. The index robot 144 may receive a provided substrate from the carrier C and transfer it to the load lock chamber 15 temporarily storing the substrate, or receive a provided temporarily stored substrate in the load lock chamber 15 and transfer it to the inside of the carrier C.

[0090] The processing block 20, as a device for performing a process treatment on a substrate, may include one or more substrate processing devices 100. A plurality of substrate processing devices 100 may be configured. Each substrate processing device 100 may perform the same process or different processes. As an example, a part of the substrate processing devices may perform an etching process on the substrate, and the remaining part of the substrate processing devices may perform a cleaning process on the etched substrate. The substrate processing device 100 according to an embodiment of the present invention may configure a substrate coated with a precursor in an internal processing space to form a coating on the nozzle.

[0091] The substrate transfer block 30 may be disposed adjacent to the process block 20, and may receive a substrate provided from the load lock chamber 15 and transfer it to the process block 20, or may transfer a substrate that has been processed in the process block 20 to the load lock chamber 15. The substrate transfer block 30 may include a track 330 disposed along a direction in which the substrate processing apparatus 100 is disposed, and a substrate transfer robot 340 that transfers the substrate while moving along the track 330. The substrate transfer robot 340 may transfer the substrate while moving the inner space of the transfer chamber 310.

[0092] According to one embodiment of the present invention, by using Figure 1 The substrate coating device 200 is provided. After the substrate is coated with the precursor, the substrate coated with the precursor is placed on Figure 2 The precursor is vaporized in the substrate processing device 100 of the semiconductor manufacturing equipment 1 to form a coating on the shower head. In order to prevent the precursor from vaporizing while the substrate W coated with the precursor moves in the semiconductor manufacturing equipment 1, the pressure of the semiconductor manufacturing equipment 1 can be from normal pressure to 0.1 Torr.

[0093] Figure 3 FIG. 1 is a diagram showing a substrate processing apparatus provided in a processing block according to an embodiment of the present invention.

[0094] Reference Figure 3 According to an embodiment of the present invention, a substrate processing apparatus 100 as an apparatus using plasma may include a chamber 1000 , a substrate supporting unit 2000 , a plasma generating unit 4000 , a gas supply unit 5000 , and a control unit 6000 .

[0095] The chamber 1000 has a space for performing a plasma process. The chamber 1000 may be provided with an exhaust port 1002 at the bottom thereof, and the exhaust port 1002 may be connected to an exhaust line installed with a pump P. The exhaust port 1002 may exhaust reaction byproducts generated during the plasma process and gas remaining inside the chamber 1000 to the outside of the chamber 1000 through the exhaust line. In this case, the internal space of the chamber 1000 may be decompressed to a predetermined pressure.

[0096] The chamber 1000 may have an opening 1004 formed in a side wall thereof. The opening 1004 may function as a passage for the substrate W to enter and exit the chamber 1000. Such an opening 1004 may be configured to be opened and closed by a door assembly.

[0097] The substrate supporting unit 2000 may be disposed in the middle and lower area of ​​the chamber 1000. The substrate supporting unit 2000 may support the substrate W by electrostatic force. However, the present embodiment is not limited thereto, and the substrate may be supported by various methods such as mechanical clamping, vacuum, etc.

[0098] The substrate support unit 2000 may include a support body 2100 and an electrostatic chuck 2200 disposed on the support body 2100. The electrostatic chuck 2200 may be configured to electrostatically adsorb the substrate W, and may include a ceramic layer having an electrode interposed therebetween.

[0099] According to an embodiment of the present invention, a first heating member 2120 for maintaining the substrate W at a process temperature may be provided inside the substrate support unit 2000. The first heating member 2120 may be a heating coil. The first heating member 2120 according to an embodiment of the present invention may apply a temperature of 200°C to 500°C to the substrate.

[0100] A support part 2150 for supporting the support body 2100 and the electrostatic chuck 2200 may be provided below the support body 2100. The support part 2150 may be a cylindrical shape having a predetermined height and having a space therein. A driving part 2300 and the like may be provided inside the support part 2150.

[0101] The substrate supporting unit 2000 may include a driving part 2300. The driving part 2300 may move the substrate supporting unit 2000 upward and downward. The driving part 2300 may use a hydraulic cylinder, a pneumatic cylinder, etc., but is not limited thereto.

[0102] The driving part 2300 extending to the outside of the chamber 1000 may be formed with a bellows 2500. The bellows 2500 has an extendable and contractible structure and may be provided to surround the driving part 2300. Thus, even if the driving part 2300 moves in the up and down directions, the outside and inside of the chamber 1000 may be blocked to keep the chamber 1000 vacuum.

[0103] The plasma generating unit 4000 may generate plasma in the processing space of the chamber 1000. Plasma may be formed in the chamber 1000 in an area above the substrate supporting unit 2000. The plasma generating unit 4000 according to an embodiment of the present invention may generate plasma in the processing space inside the chamber 1000 using a capacitively coupled plasma (CCP) source.

[0104] However, the present embodiment is not limited thereto, and the plasma generating unit 4000 may generate plasma in the processing space inside the chamber 1000 using an inductively coupled plasma (ICP) source or a plasma source of other types such as microwaves.

[0105] The plasma generating unit 4000 may include a high frequency power supply 4002 and a matching device 4004. The high frequency power supply 4002 may supply high frequency power to either the upper electrode or the lower electrode in order to generate a potential difference between the upper electrode and the lower electrode. Here, the upper electrode may be the showerhead 4100, and the lower electrode may be the substrate supporting unit 2000. The high frequency power supply 4002 may be connected to the lower electrode, and the upper electrode may be grounded.

[0106] The shower head 4100 may be formed to be opposite to the electrostatic chuck 2200 up and down inside the chamber 1000. Such a shower head 4100 may be provided with a plurality of gas injection holes in order to uniformly inject gas into the inside of the chamber 1000, and may be provided to have a diameter greater than that of the electrostatic chuck 2200. A second heating member 4120 for heating the shower head 4100 may be provided inside the shower head 4100, and as an example, the second heating member 4120 may be a heating coil. According to one embodiment of the present invention, the second heating member 4120 of the shower head 4100 may be heated to apply heat to the coating formed on the shower head 4100. At this time, the shower head may have a temperature range of 200°C to 500°C. According to one embodiment of the present invention, by applying heat to the coating formed on the shower head 4100 using the second heating member 4120 of the shower head 4100, the film quality of the coating may be improved. On the other hand, the shower head 4100 may be made of a silicon component or a metal component.

[0107] The gas supply unit 5000 can supply the gas required for the process to the inside of the chamber 1000. Such a gas supply unit 5000 can include a gas supply source 5002, a gas supply line 5004 and a gas injection nozzle. The gas supply line 5004 can be connected to the gas supply source 5002 and the gas injection nozzle. The gas supply line 5004 can supply the gas stored in the gas supply source 5002 to the gas injection nozzle. A valve 5006 for opening and closing its passage or regulating the flow rate of the fluid flowing through its passage can be provided on the gas supply line 5004.

[0108] exist Figure 3 Although only one gas supply source 5002 and a gas supply valve 5006 are shown, the gas supply source of the present invention may include multiple gas supply sources and multiple gas supply valves that can independently control the supply of each gas, so that a large amount of gas can be supplied to the chamber.

[0109] The control unit 6000 can comprehensively control the operation of the substrate processing device 100 constructed as above. An example of a control unit is a computer, which can have a central processing unit (Central Process Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary memory device, etc. The CPU can work based on the program or processing conditions stored in the ROM or the auxiliary memory device to control the overall operation of the device. In addition, the computer-readable program required for control is also stored in the memory medium. An example of a memory medium is composed of a floppy disk, a compact disc (CD, Compact Disc), a read-only disc (CD-ROM), a hard disk, a flash memory or a high-density digital video disc (DVD), etc. The control unit 6000 can be configured inside the substrate processing device 100, or it can be configured outside. When the control unit 6000 is configured outside, the control unit 6000 can control the processing device through a communication method such as wired or wireless.

[0110] The control unit 6000 according to an embodiment of the present invention may control the supply of gas to the processing space inside the chamber 1000 in order to perform the process, and the gas may be plasmatized by the plasma generating unit 4000. The control unit 6000 may control the operation of the driving unit 2300 of the substrate supporting unit 2000 to move the substrate W to a position separated by a predetermined distance from the shower head 4100, and may control the first heating member 2120 of the substrate supporting unit 2000 to apply heat to the substrate W coated with the precursor. In addition, the control unit 6000 may control the second heating member 4120 of the shower head 4100 to condense the vaporized precursor and improve the film quality of the coating formed on the shower head 4100.

[0111] Figure 4 as well as Figure 5 is a flow chart of a nozzle coating method according to an embodiment of the present invention.

[0112] Reference Figure 4 as well as Figure 5 , may include a precursor coating step of coating a precursor on a substrate (S100), a configuration step of configuring the substrate coated with the precursor in a processing space inside a chamber (S200), a heat and pressure applying step of applying heat and pressure to the substrate coated with the precursor (S300), a coating forming step of forming a coating on a nozzle (S400), and a film quality improving step of heating the nozzle to apply heat to the coating (S500).

[0113] The precursor coating step (S100) is a step of coating the substrate with a precursor. The precursor may be a precursor containing silane or siloxane. The precursor containing silane according to an embodiment of the present invention is a precursor having the following [Chemical Formula 1].

[0114]

[0115] [Chemical formula 1]

[0116] At this time, R 1 , R 2 , R 3 and R 4 Each of may be independently selected from the group consisting of H, OH, and C1-C6 alkyl or alkenyl. In addition, n may have a range of 1≤n≤2000.

[0117] The precursor including siloxane according to an embodiment of the present invention is a precursor having the following [Chemical Formula 2].

[0118] [Chemical formula 2]

[0119]

[0120] R 1 , R 2 , R 3 and R 4 Each of may be independently selected from the group consisting of H, OH, and C1-C6 alkyl or alkenyl. In addition, n may have a range of 1≤n≤2000.

[0121] According to one embodiment of the present invention, a substrate coating device may be used to coat a precursor on a substrate, but the present invention is not limited thereto. For example, in the case of a precursor with low viscosity, the substrate may be processed to have a space inside the substrate, and the precursor may be poured into the internal space to fill the space. In this case, the substrate coating device may not be used.

[0122] The configuration step (S200) is a step of configuring the substrate coated with the precursor in the processing space of the chamber. At this time, the substrate coated with the precursor can be configured in the processing space of the substrate processing device. According to one embodiment of the present invention, the configuration step (S200) may also include a moving step (S250) for moving the substrate after the substrate is configured in the processing space. The moving step (S250) can move the substrate coated with the precursor using the driving part of the substrate support unit, and can configure the substrate coated with the precursor to be separated from the nozzle by a predetermined distance.

[0123] The heat and pressure applying step (S300) is a step of applying heat and pressure to the substrate coated with the precursor. The first heating component of the substrate support unit may be heated to apply heat to the substrate, and may have a temperature range of 200°C to 500°C. Pressure may be applied to the substrate while applying heat to the substrate. The pressure inside the chamber may be controlled to apply pressure to the substrate, and may be controlled to have a pressure of normal pressure to 0.01 Torr. If heat and pressure are applied together to the substrate coated with the precursor, the precursor coated on the substrate may be vaporized.

[0124] The coating forming step (S400) is a step of forming a coating on the nozzle. It can be that the precursor of the substrate coated with the precursor is vaporized through the heat and pressure application step, and the vaporized precursor condenses on the surface of the nozzle to form a coating. The coating according to an embodiment of the present invention can be a silicon film and / or a silicon oxide film, and the coating can have a thickness of 1 μm to 1 mm.

[0125] The film quality improvement step (S500) is a step of improving the film quality of the coating formed on the nozzle. If the precursor is vaporized and a coating is formed on the nozzle surface, the second heating component inside the nozzle can be heated to apply heat to the coating. At this time, the nozzle can apply a temperature of 200°C to 500°C to the coating, and the film quality of the coating formed on the nozzle can be improved through such a step. Specifically, by applying heat to the coating, the crystallinity of the coating can be improved and the density can be increased.

[0126] Figure 6 FIG. 1 is a diagram showing a substrate processing apparatus according to still another embodiment of the present invention.

[0127] Figure 6 The substrate processing apparatus 100 and Figure 3 The difference between the substrate processing apparatus 100 and Figure 3 Different from the substrate processing apparatus 100 of the present invention, the substrate coated with the precursor is moved below the shower head by using the lift pin assembly 3000 formed in the substrate supporting unit 2000 .

[0128] Reference Figure 6In order to load / unload the substrate W, a plurality of lift pins 3200 may be provided at a certain interval in the substrate support unit 2000. The interior of the substrate support unit 2000 may be formed with a plurality of pin holes 2400 through the upper and lower sides so that the lift pins 3200 can move up and down. The lift pins 3200 may be combined with a lift pin holder not shown in the figure, and the lift pin holder may be fixedly combined with the lift pin support component 3600. The lift pin driving unit 3800 may lift and lower the lift pin support component 3600. By driving the lift pin driving unit 3800, the lift pin support component 3600 may move in the upper and lower directions, and the lift pins 3200 may move along the pin holes 2400. The lift pin driving unit 3800 may use a hydraulic cylinder, a pneumatic cylinder, etc., but is not limited thereto.

[0129] Figure 7 is a flow chart showing a nozzle coating method according to yet another embodiment of the present invention, which can be used Figure 6 A substrate processing device.

[0130] Reference Figure 7 , may include a precursor coating step of coating a precursor on a substrate (S100a), a configuration step of configuring the substrate coated with the precursor in a processing space inside a chamber (S200a), a heat and pressure applying step of applying heat and pressure to the substrate coated with the precursor (S300a), and a coating forming step of forming a coating on a nozzle (S400a). Figure 7 Nozzle coating method and Figure 4 as well as Figure 5 Differently, the film quality improvement step (S500) is not included.

[0131] The precursor coating step (S100a) and the configuration step (S200a) are similar to those described in Figure 4 as well as Figure 5 The method described in is the same as that described in , so the description is omitted. The configuration step (S200a) may further include a moving step (S250a) for moving the substrate. Figure 7 The moving step (S250a) and Figure 4 as well as Figure 5 The difference is that a lift pin assembly is used to space the substrate coated with the precursor away from the showerhead at a predetermined distance.

[0132] The heat and pressure applying step (S300a) may utilize a second heating component of the nozzle in order to apply heat to the substrate, and the heating temperature may be different depending on the type of precursor coated on the substrate. According to yet another embodiment of the present invention, the nozzle may have a temperature range of 200°C to 500°C. Pressure may be applied to the substrate while applying heat to the substrate. The pressure inside the chamber may be controlled in order to apply pressure to the substrate, and may be controlled to have a pressure ranging from normal pressure to 0.01 Torr. If heat and pressure are applied simultaneously to the substrate coated with the precursor, the coated precursor may be vaporized.

[0133] The coating forming step (S400a) is a step of forming a coating on the nozzle. It can be that the precursor of the substrate coated with the precursor is vaporized through the heat and pressure applying step (S300a), and the vaporized precursor forms a coating on the nozzle. The second heating part of the nozzle continues to apply heat. Therefore, the film quality can be improved while the nozzle forms the coating, so there is no need Figure 4 as well as Figure 5 The film quality improvement step (S500) is shown. According to an embodiment of the present invention, the coating layer may be a silicon film and / or a silicon oxide film, and the coating layer may have a thickness of 1 μm to 1 mm.

[0134] As described above, by placing a substrate coated with a precursor inside a substrate processing device and applying heat and pressure to the substrate, a coating can be formed on the nozzle. More specifically, the precursor can be coated on the substrate in the substrate coating device, and the substrate coated with the precursor can be placed in the substrate processing device to form a coating on the nozzle. Due to this, it is possible to prevent the nozzle from being damaged by plasma. In addition, by forming a coating on the nozzle damaged by plasma, the nozzle can also be restored to have its original thickness. Therefore, the damage to the nozzle can be quickly compensated, the replacement cycle of the nozzle can be increased, and the replacement cost can be reduced.

[0135] The above description is only an exemplary description of the technical concept of the present invention. If a person has common knowledge in the technical field to which the present invention belongs, various modifications and changes will be possible without departing from the essential features of the present invention. Therefore, the embodiments recorded in the present invention are not used to limit the technical concept of the present invention, but to illustrate the technical concept of the present invention, and the technical concept of the present invention is not limited by such embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be interpreted as included in the scope of rights of the present invention.

Claims

1. A semiconductor manufacturing equipment, characterized in that: include: an index block including a carrier for receiving a substrate coated with a precursor; a processing block including a substrate processing device for performing a processing process for the substrate; as well as a substrate transfer block, comprising a substrate transfer robot arm for carrying in or out the substrate, The substrate processing device comprises: a chamber having a processing space therein; a substrate supporting unit, disposed in the processing space, supporting the substrate coated with the precursor, and comprising a first heating member for heating; a gas supply unit, configured to supply gas to the processing space; a plasma generating unit for converting the supplied gas into plasma; a showerhead for supplying the supplied gas to the processing space; and a control unit, configured to control the gas supply unit and the plasma generating unit, The control unit controls the first heating member to heat the substrate supported by the substrate support unit to vaporize the precursor applied to the substrate, thereby forming a coating layer on the shower head.

2. The semiconductor manufacturing equipment according to claim 1, characterized in that The showerhead includes a second heating component.

3. The semiconductor manufacturing equipment according to claim 2, characterized in that The control unit controls the second heating member of the shower head to apply heat to the coating layer formed on the shower head.

4. The semiconductor manufacturing equipment according to claim 2, characterized in that The first heating member of the substrate supporting unit and the second heating member of the shower head apply a temperature of 200° C. to 500° C. to the substrate and the coating layer formed on the shower head, respectively.

5. The semiconductor manufacturing equipment according to claim 1, characterized in that The coating formed on the shower head is a silicon film or a silicon oxide film.

6. The semiconductor manufacturing equipment according to claim 1, characterized in that The substrate supporting unit further includes a driving portion and a lifting pin assembly for lifting the substrate.

7. The semiconductor manufacturing equipment according to claim 6, characterized in that The control unit controls the driving unit to move the substrate coated with the precursor upward toward the shower head, and controls the first heating member to vaporize the precursor applied to the substrate upward toward the shower head.

8. The semiconductor manufacturing equipment according to claim 1, characterized in that The precursor comprises silane or siloxane.

9. The semiconductor manufacturing equipment according to claim 8, characterized in that The precursor containing the silane is a precursor represented by the following [Chemical Formula 1], [Chemical formula 1] Each of R1, R2, R3 and R4 is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, The n is in the range of 1≤n≤2000.

10. The semiconductor manufacturing equipment according to claim 8, characterized in that The precursor containing the siloxane is a precursor represented by the following [Chemical Formula 2], [Chemical formula 2] Each of R1, R2, R3 and R4 is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, The n is in the range of 1≤n≤2000.

11. A nozzle coating method, characterized in that: include: A precursor coating step, coating the precursor on the substrate; a disposing step of disposing the substrate coated with the precursor in a processing space inside a chamber; a heat and pressure applying step of applying heat and pressure to the substrate coated with the precursor; a coating forming step of vaporizing the precursor to form a coating on a nozzle disposed opposite to the substrate; as well as The film quality improving step heats the coating by heating the showerhead.

12. The nozzle coating method according to claim 11, characterized in that: The precursor of the precursor coating step comprises silane or siloxane.

13. The nozzle coating method according to claim 12, characterized in that: The precursor containing the silane is a precursor represented by the following [Chemical Formula 1], [Chemical formula 1] Each of R1, R2, R3 and R4 is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, The n is in the range of 1≤n≤2000.

14. The nozzle coating method according to claim 12, characterized in that: The precursor containing the siloxane is a precursor represented by the following [Chemical Formula 2], [Chemical formula 2] Each of R1, R2, R3 and R4 is independently selected from the group consisting of H, OH and C1-C6 alkyl or alkenyl, The n is in the range of 1≤n≤2000.

15. The nozzle coating method according to claim 11, characterized in that: The configuration steps include: The moving step is to move the substrate coated with the precursor to a position opposite to the nozzle.

16. The nozzle coating method according to claim 11, characterized in that: In the heat and pressure applying step, The heat applied to the substrate has a temperature range of 200° C. to 500° C., The pressure applied to the substrate has a pressure range from normal pressure to 0.01 Torr.

17. The nozzle coating method according to claim 11, characterized in that: The coating layer formed in the coating layer forming step is a silicon film or a silicon oxide film.

18. The nozzle coating method according to claim 17, characterized in that: The coating has a thickness ranging from 1 μm to 1 mm.

19. The nozzle coating method according to claim 11, characterized in that: The film quality enhancement step applies a temperature of 200° C. to 500° C. to the coating.

20. A semiconductor manufacturing device, characterized in that: include: a support accommodating the substrate on which the precursor is coated; An index block, comprising a loading port for receiving a carrier containing the substrate and an index frame having an indexing robot for taking out a substrate from the carrier received in the loading port; a load lock chamber for temporarily storing the substrate transferred from the index robot; a processing block including a substrate processing device for performing a processing process for the substrate; as well as a substrate transfer block including a substrate transfer robot arm for transferring a substrate transferred from the load lock chamber into the substrate processing device or transferring a substrate transferred from the substrate processing device to the load lock chamber, The substrate processing device comprises: a chamber having a processing space therein; a substrate supporting unit, disposed in the processing space and supporting the substrate coated with the precursor received from the substrate transfer robot; a first heating component for heating the substrate coated with the precursor; a gas supply unit, configured to supply gas to the processing space; a plasma generating unit for converting the supplied gas into plasma; a showerhead for supplying the supplied gas to the processing space; a driving unit provided to lift the substrate supporting unit or the substrate supported by the substrate supporting unit toward the direction of the nozzle; and Control unit, If the substrate coated with the precursor is transferred to the substrate supporting unit, the control unit controls the driving part to make the substrate coated with the precursor rise toward the nozzle, and controls the first heating component to vaporize the precursor coated on the substrate to form a coating on the nozzle.

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