Multipath power amplification architecture, radio frequency generation equipment and communication system

Abstract

The embodiment of the invention provides a multi-channel power amplification architecture, radio frequency generation equipment and a communication system, and is applied to the technical field of wireless communication. The multi-channel power amplification architecture comprises a multi-channel amplification circuit and a first pilot frequency power division circuit. The multi-path amplification circuit is used for outputting a first radio frequency signal and / or a second radio frequency signal. The first pilot frequency power dividing circuit comprises at least one microstrip line. The first pilot frequency power division circuit performs power synthesis on the multiple paths of first radio frequency signals and / or second radio frequency signals based on impedance characteristics of the microstrip line, and outputs power synthesis signals of the first radio frequency signals and power synthesis signals of the second radio frequency signals through a pilot frequency power division function. According to the embodiment of the invention, power synthesis and pilot frequency power division are realized based on the pilot frequency power division structure comprising the microstrip line, and design limitation, insertion loss and the like caused by a bridge structure are avoided. According to the embodiment of the invention, large-bandwidth, large-backoff-amount, high-efficiency and multi-band power amplifier design can be carried out more easily.

Description

Technical Field

[0001] The present application relates to the field of wireless communication technology, and in particular to a multi-channel power amplification architecture, a radio frequency generation device and a communication system. Background Art

[0002] In the application of wireless communication technology, data information is carried on the radio frequency signal through modulation technology, and the radio frequency signal is transmitted to achieve wireless communication between the transmitting side and the receiving side. In order to ensure the communication quality of wireless communication, the radio frequency signal is usually required to be power amplified before it is transmitted. However, with the development of wireless communication technology, the modulation technology of radio frequency signals has gradually become more complicated, making the signal peak-to-average ratio of the output radio frequency signal larger. At this time, in order to improve the working efficiency of the output radio frequency signal, it is necessary to make the power amplifier have a certain power back-off amount.

[0003] As communication systems develop towards high speed and low latency, the bandwidth of communication signals continues to increase. Because of the fragmented nature of communication signal frequency bands, power amplifiers usually need to be designed to be compatible with multiple different frequency bands. In the design of power amplifiers, improving back-off efficiency and expanding working bandwidth are conflicting requirements, and both have certain design difficulties. Therefore, how to design a power amplifier with high back-off, high efficiency and large power bandwidth is a difficult problem. Summary of the invention

[0004] The embodiments of the present application provide a multi-channel power amplifier architecture, a radio frequency generation device and a communication system, which realize a power amplifier design with high back-off, high efficiency and large power bandwidth.

[0005] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0006] In a first aspect, a multi-channel power amplification architecture is provided, which includes a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, a second slave amplifier circuit and a first inter-frequency power division circuit. The first inter-frequency power division circuit includes at least one microstrip line. The output end of the first main amplifier circuit, the output end of the second main amplifier circuit, the output end of the first slave amplifier circuit and the output end of the second slave amplifier circuit are respectively coupled to the first inter-frequency power division circuit. Wherein: the output end of the first main amplifier circuit is used to output a first radio frequency signal; the output end of the second main amplifier circuit is used to output a second radio frequency signal. The first radio frequency signal and the second radio frequency signal have different frequencies. The output end of the first slave amplifier circuit and the output end of the second slave amplifier circuit are used to output a radio frequency synthesis signal, and the radio frequency synthesis signal includes the first radio frequency signal and / or the second radio frequency signal. The first output end of the first inter-frequency power division circuit is used to assist in realizing the power synthesis of the first radio frequency signal. The second output end of the first inter-frequency power division circuit is used to assist in realizing the power synthesis of the second radio frequency signal.

[0007] In an embodiment of the present application, the first inter-frequency power division circuit is coupled with the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit respectively to assist in realizing the power synthesis of the first RF signal and the power synthesis of the second RF signal, and the first RF synthesis signal and the second RF synthesis signal are output based on the inter-frequency power division function. The first main amplifier circuit can power amplify the RF signal of the first frequency band to obtain the first RF signal, and the second main amplifier circuit can power amplify the RF signal of the second frequency band to obtain the second RF signal. The first slave amplifier circuit and the second slave amplifier circuit can power amplify the RF signal including the first frequency band and / or the second frequency band to respectively obtain a RF synthesis signal that can include the first RF signal and / or the second RF signal. The first inter-frequency power division circuit can distinguish the first RF signal from the second RF signal based on the inter-frequency power division function, and assist in realizing the power synthesis of the first RF signal output by the first main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit, and can also assist in realizing the power synthesis of the second RF signal output by the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit. The multi-channel power amplifier architecture of the embodiment of the present application realizes load pulling and inter-frequency power division based on the first inter-frequency power molecule circuit, thereby improving the freedom of architecture design while avoiding the design difficulties caused by the bridge impedance characteristics encountered when using a bridge for inter-frequency power division. At the same time, the microstrip line reduces the device area cost and improves the device integration.

[0008] In some possible implementations, the first inter-frequency power division circuit includes a first inter-frequency power molecular circuit, a second inter-frequency power molecular circuit, and a connecting microstrip line. The first inter-frequency power molecular circuit is coupled to the second inter-frequency power molecular circuit via the connecting microstrip line. The first inter-frequency power division circuit and the second inter-frequency power division circuit are connected in different ways, and inter-frequency power division effects can be achieved in different ways. Specifically, the following three connection relationships can be used as examples:

[0009] Example 1 of connection relationship: The first end of the connecting microstrip line is coupled to the combining end of the first hetero-frequency power molecular circuit, and the second end of the connecting microstrip line is coupled to the combining end of the second hetero-frequency power molecular circuit. The output end of the first slave amplifier circuit is coupled to the combining end of the first hetero-frequency power molecular circuit. The output end of the first main amplifier circuit is coupled to the first branch end of the first hetero-frequency power molecular circuit, and the second branch end of the first hetero-frequency power molecular circuit is the second output end of the first hetero-frequency power branch circuit. The output end of the second slave amplifier circuit is coupled to the combining end of the second hetero-frequency power molecular circuit. The output end of the second main amplifier circuit is coupled to the first branch end of the second hetero-frequency power molecular circuit, and the second branch end of the second hetero-frequency power molecular circuit is the first output end of the first hetero-frequency power branch circuit.

[0010] Exemplarily, the first hetero-frequency power molecular circuit includes a first microstrip line, a second microstrip line, a first isolation circuit, and a second isolation circuit. The second hetero-frequency power molecular circuit includes a third microstrip line, a fourth microstrip line, a third isolation circuit, and a fourth isolation circuit. The first end of the first microstrip line and the first end of the second microstrip line are coupled as a combined end of the first hetero-frequency power molecular circuit; the second end of the first microstrip line is used as a first branch end of the first hetero-frequency power molecular circuit; and the second end of the second microstrip line is used as a second branch end of the first hetero-frequency power molecular circuit. The first end of the third microstrip line and the first end of the fourth microstrip line are coupled as a combined end of the second hetero-frequency power molecular circuit. The second end of the third microstrip line is used as a first branch end of the second hetero-frequency power molecular circuit; and the second end of the fourth microstrip line is used as a second branch end of the second hetero-frequency power molecular circuit. The first isolation circuit is coupled to the first branch end of the first hetero-frequency power molecular circuit. The second isolation circuit is coupled to the second branch end of the first hetero-frequency power molecular circuit. The third isolation circuit is coupled to the first branch end of the second hetero-frequency power molecular circuit. The fourth isolation circuit is coupled to the second branch end of the second hetero-frequency power molecular circuit. Wherein: the first isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The second isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The third isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The fourth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal.

[0011] Example 2 of connection relationship: The first end of the microstrip line is coupled to the combining end of the first hetero-frequency power molecular circuit, and the second end of the microstrip line is coupled to the combining end of the second hetero-frequency power molecular circuit. The output end of the first slave amplifier circuit is coupled to the combining end of the first hetero-frequency power molecular circuit. The output end of the first main amplifier circuit is coupled to the first branch end of the first hetero-frequency power molecular circuit and serves as the first output end of the first hetero-frequency power branch circuit. The output end of the second slave amplifier circuit is coupled to the combining end of the second hetero-frequency power molecular circuit. The output end of the second main amplifier circuit is coupled to the first branch end of the second hetero-frequency power molecular circuit and serves as the second output end of the first hetero-frequency power branch circuit.

[0012] Exemplarily, the first inter-frequency power division circuit includes a fifth microstrip line, a sixth microstrip line and a fifth isolation circuit. The second inter-frequency power division circuit includes a seventh microstrip line, an eighth microstrip line and a sixth isolation circuit. The first end of the fifth microstrip line serves as a combining end of the first inter-frequency power molecular circuit, and the second end of the fifth microstrip line serves as a first branching end of the first inter-frequency power molecular circuit. The output end of the first main amplifier circuit is coupled to the second end of the fifth microstrip line through the sixth microstrip line. The first end of the seventh microstrip line serves as a combining end of the second inter-frequency power molecular circuit, and the second end of the seventh microstrip line serves as a first branching end of the second inter-frequency power molecular circuit. The output end of the second main amplifier circuit is coupled to the second end of the seventh microstrip line through the eighth microstrip line. The fifth isolation circuit is coupled to the first branching end of the first inter-frequency power molecular circuit. The sixth isolation circuit is coupled to the first branching end of the second inter-frequency power molecular circuit. Wherein: the fifth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The sixth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal.

[0013] Example 3 of connection relationship: the first branch end of the first inter-frequency power molecular circuit is coupled with the output end of the first main amplifier circuit, the second branch end of the first inter-frequency power molecular circuit is coupled with the output end of the second main amplifier circuit, the combining end of the first inter-frequency power molecular circuit and the output end of the first slave amplifier circuit are respectively coupled with the first end of the microstrip line. The combining end of the second inter-frequency power molecular circuit and the output end of the second slave amplifier circuit are respectively coupled with the second end of the microstrip line, the first branch end of the second inter-frequency power molecular circuit serves as the first output end of the first inter-frequency power division circuit, and the second branch end of the second inter-frequency power molecular circuit serves as the second output end of the first inter-frequency power division circuit.

[0014] Exemplarily, the first inter-frequency power division circuit includes a ninth microstrip line, a tenth microstrip line, a seventh isolation circuit, and an eighth isolation circuit. The second inter-frequency power division circuit includes an eleventh microstrip line, a twelfth microstrip line, a ninth isolation circuit, and a tenth isolation circuit. The first end of the ninth microstrip line serves as the first branch end of the first inter-frequency power molecular circuit, the second end of the ninth microstrip line and the second end of the tenth microstrip line are coupled as the combined end of the first inter-frequency power molecular circuit, and the first end of the tenth microstrip line serves as the second branch end of the first inter-frequency power molecular circuit. The first end of the eleventh microstrip line serves as the first branch end of the second inter-frequency power molecular circuit, the second end of the eleventh microstrip line and the second end of the twelfth microstrip line are coupled as the combined end of the second inter-frequency power molecular circuit, and the first end of the twelfth microstrip line serves as the second branch end of the second inter-frequency power molecular circuit. The seventh isolation circuit is coupled to the first branch end of the first inter-frequency power molecular circuit. The eighth isolation circuit is coupled to the second branch end of the first inter-frequency power molecular circuit. The ninth isolation circuit is coupled to the first branch end of the second inter-frequency power molecular circuit. The tenth isolation circuit is coupled to the second branch end of the second frequency-different power molecular circuit. Wherein: the seventh isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The eighth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The ninth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The tenth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal.

[0015] Exemplarily, in the above-mentioned connection relationship 1, connection relationship 2 and connection relationship 3, the first inter-frequency power division circuit and / or the second inter-frequency power division circuit can also be a microstrip inter-frequency power division circuit. The microstrip inter-frequency power division circuit includes a twenty-third microstrip line, a twenty-fourth microstrip line, a twenty-fifth microstrip line, a twenty-sixth microstrip line, a twenty-seventh microstrip line, a twenty-eighth microstrip line and a twenty-ninth microstrip line. The electrical length of the twenty-fourth microstrip line and the twenty-fifth microstrip line is a quarter wavelength of the second radio frequency signal. The electrical length of the twenty-sixth microstrip line and the twenty-seventh microstrip line is a quarter wavelength of the first radio frequency signal. Wherein: the first end of the twenty-third microstrip line serves as the first branch end of the microstrip inter-frequency power division circuit, and the second end of the twenty-third microstrip line is coupled with the first end of the twenty-fourth microstrip line and the first end of the twenty-fifth microstrip line, respectively. The first end of the twenty-eighth microstrip line serves as the second branch end of the microstrip inter-frequency power division circuit, and the second end of the twenty-eighth microstrip line is coupled with the first end of the twenty-seventh microstrip line and the first end of the twenty-sixth microstrip line, respectively. The second end of the twenty-fifth microstrip line and the second end of the twenty-sixth microstrip line are coupled to the first end of the twenty-ninth microstrip line respectively, and the second end of the twenty-ninth microstrip line serves as a combining end of the microstrip different-frequency power division circuit.

[0016] In some possible implementations, the first inter-frequency power division circuit may be an inter-frequency power division structure based on a microstrip line and a coupling bridge structure. At this time, the first inter-frequency power division circuit includes a coupling bridge, a thirteenth microstrip line, a fourteenth microstrip line, a fifteenth microstrip line, a sixteenth microstrip line, a seventeenth microstrip line, an eighteenth microstrip line, an eleventh isolation circuit, a twelfth isolation circuit, a thirteenth isolation circuit, and a fourteenth isolation circuit. Among them: the first end of the thirteenth microstrip line and the first end of the fifteenth microstrip line are coupled with the output end of the first main amplifier circuit after being coupled with the eleventh isolation circuit, and the second end of the thirteenth microstrip line is coupled with the output end of the first slave amplifier circuit and the first end of the coupling bridge respectively. The first end of the fourteenth microstrip line and the second end of the fifteenth microstrip line are coupled with the twelfth isolation circuit as the second output end of the first inter-frequency power division circuit, and the second end of the fourteenth microstrip line is coupled with the second end of the coupling bridge. The first end of the sixteenth microstrip line is coupled to the output end of the second slave amplifier circuit and the third end of the coupling bridge, respectively. The second end of the sixteenth microstrip line and the first end of the eighteenth microstrip line are coupled to the output end of the second master amplifier circuit after being coupled to the thirteenth isolation circuit. The first end of the seventeenth microstrip line is coupled to the fourth end of the coupling bridge, and the second end of the seventeenth microstrip line and the second end of the eighteenth microstrip line are coupled to the fourteenth isolation circuit as the first output end of the first different-frequency power division circuit. The eleventh isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The twelfth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The thirteenth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The fourteenth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The first end and the third end of the coupling bridge are isolation ends to each other, and the first end and the second end of the coupling bridge are direct-through ends to each other.

[0017] Exemplarily, the coupling bridge includes a nineteenth microstrip line, a twentieth microstrip line, a twenty-first microstrip line, and a twenty-second microstrip line. Wherein: the first end of the nineteenth microstrip line is coupled with the first end of the twentieth microstrip line as the first end of the coupling bridge. The second end of the nineteenth microstrip line is coupled with the first end of the twenty-first microstrip line as the second end of the coupling bridge. The second end of the twentieth microstrip line is coupled with the first end of the twenty-second microstrip line as the third end of the coupling bridge. The second end of the twenty-first microstrip line is coupled with the second end of the twenty-second microstrip line as the fourth end of the coupling bridge.

[0018] In the embodiment of the present application, based on the case where a broadband signal is converted into a narrowband signal through heterodyne power division, the design requirements for the output isolation circuit are reduced, and a narrowband isolator can be used as the isolation circuit, avoiding the insertion loss and design difficulties caused by the broadband isolator.

[0019] In one possible implementation, the multi-channel power amplification architecture further includes a second hetero-frequency power division circuit. The first output end of the first hetero-frequency power division circuit is coupled to the first branch end of the second hetero-frequency power division circuit, and the first output end of the first hetero-frequency power division circuit is coupled to the second branch end of the second hetero-frequency power division circuit. The combining end of the second hetero-frequency power division circuit is used to output any one of the following signals: a first RF synthesized signal, a second RF synthesized signal, and a synthesized signal of the first RF synthesized signal and the second RF synthesized signal. In an embodiment of the present application, the multi-channel power amplification architecture can form a dual-frequency dual-output structure based on the first hetero-frequency power division circuit, and can also form a dual-frequency single-output architecture based on the second hetero-frequency power division circuit.

[0020] Exemplarily, the second inter-frequency power division circuit may be a traditional inter-frequency power divider.

[0021] Exemplarily, the second inter-frequency power division circuit may also be a microstrip structure in the embodiments related to the first inter-frequency power division circuit and the second inter-frequency power division circuit, such as the structure recorded in the above-mentioned microstrip inter-frequency power division circuit.

[0022] In a possible implementation manner, at least one of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit is a power synthesis circuit; and the power synthesis circuit includes a plurality of amplification branch circuits.

[0023] Exemplarily, the power synthesis circuit includes at least one of the following: a doherty circuit, an inverse doherty circuit, an asymmetric doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage-type synthesis circuit, a chireix amplifier circuit, and an out-of-phase modulation amplifier circuit.

[0024] In the embodiment of the present application, based on converting a broadband signal into a narrowband signal through heterodyne power division, the difficulty of circuit design is reduced, and the architecture expansion design can be performed more easily, thereby obtaining a larger power back-off amount, etc.

[0025] In a possible implementation, the multi-channel power amplification architecture further includes a shunt circuit and a first coupler. The shunt circuit is used to: input a first RF signal and a second RF signal, and output the first RF signal to the input end of the first main amplifier circuit and the first end of the first coupler, respectively, and output the second RF signal to the input end of the second main amplifier circuit and the third end of the first coupler, respectively. The second end of the first coupler and the fourth end of the first coupler are used to: output a RF combined frequency signal to the input end of the first slave amplifier circuit and the input end of the second slave amplifier circuit, respectively.

[0026] Exemplarily, the branch circuit includes a first power divider and a second power divider. The combining end of the first power divider is used to input a first radio frequency signal; the first branch end and the second branch end of the first power divider are respectively used to output a first radio frequency signal. The combining end of the second power divider is used to input a second radio frequency signal. The first branch end and the second branch end of the second power divider are respectively used to output a second radio frequency signal.

[0027] Exemplarily, the branch circuit includes a first inter-frequency power divider and a second inter-frequency power divider. The combining end of the first inter-frequency power divider is used to input a first radio frequency signal and a second radio frequency signal. The first branch end of the first inter-frequency power divider outputs a first radio frequency signal. The second branch end of the first inter-frequency power divider is used to output a second radio frequency signal. The combining end of the second inter-frequency power divider is used to input a first radio frequency signal and a second radio frequency signal. The first branch end of the second inter-frequency power divider outputs a first radio frequency signal. The second branch end of the second inter-frequency power divider is used to output a second radio frequency signal.

[0028] In some examples, the first inter-frequency power divider and / or the second inter-frequency power divider may be an inter-frequency power divider circuit based on a microstrip line structure, or an inter-frequency power divider circuit with other circuit structures.

[0029] Exemplarily, the shunt circuit includes a third inter-frequency power divider, a third power divider and a fourth power divider. The first shunt end and the second shunt end of the third inter-frequency power divider are respectively coupled with the combining end of the third power divider and the combining end of the fourth power divider. Wherein: the combining end of the third inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal. The first shunt end of the third inter-frequency power divider is used to output the first radio frequency signal. The second shunt end of the third inter-frequency power divider is used to output the second radio frequency signal. The first shunt end and the second shunt end of the third power divider are respectively used to output one first radio frequency signal. The first shunt end and the second shunt end of the fourth power divider are respectively used to output one second radio frequency signal.

[0030] In some examples, the third inter-frequency power divider may be an inter-frequency power divider circuit based on a microstrip line structure, or an inter-frequency power divider circuit with other circuit structures.

[0031] In the embodiment of the present application, the shunt circuit and the first coupler can be combined to output RF signals of corresponding frequency bands to the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit in different ways.

[0032] In a possible implementation, the first RF signal and / or the second RF signal include at least one RF signal of a sub-band. In an embodiment of the present application, a RF signal with a relatively large bandwidth can be split into a plurality of first RF signals and second RF signals with relatively small bandwidths. The convergence of impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the back-off efficiency and full-load efficiency of the multi-channel power amplification architecture. In addition, splitting the traditional wideband main amplifier circuit into a plurality of RF signals with relatively small bandwidths can avoid the problem of difficult VBW design in concurrent scenarios and will not cause deterioration of concurrent performance.

[0033] In a possible implementation, the minimum operating power point of the first master amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the second master amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the first slave amplifier circuit is less than, equal to, or greater than the minimum operating power point of the second slave amplifier circuit. In the embodiment of the present application, the start-up order between the slave amplifier circuits is not limited, and the start-up order can be adjusted according to the actual application.

[0034] In a possible implementation, the multi-channel power amplifier architecture further includes a driving circuit or a control circuit, and the minimum operating power point of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit is controlled based on the driving circuit or the control circuit. In an embodiment of the present application, since the first slave amplifier circuit and the second slave amplifier circuit under the same architecture may also have a reversed start-up order (for example, under an architecture, for a radio frequency signal of a first frequency band, the first slave amplifier circuit may start working before the second slave amplifier circuit, but for a radio frequency signal of a second frequency band, the second slave amplifier circuit may start working before the first slave amplifier circuit), the minimum operating power point of the minimum operating power point of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit may be controlled by a driving circuit or a control circuit in the digital domain to achieve control of the start-up order.

[0035] In a possible implementation, at least one of the multiple microstrip lines is a microstrip line with a three-dimensional stacked structure. Exemplarily, the microstrip line may be a suspended microstrip line. In the embodiment of the present application, the performance of the microstrip line with a three-dimensional stacked structure is consistent with that of an ordinary microstrip line, but its area is much smaller than that of an ordinary microstrip line. The microstrip line with a three-dimensional stacked structure can reduce the area overhead of more multi-channel power amplifier architectures.

[0036] In a second aspect, an embodiment of the present application further provides a radio frequency generation device, the radio frequency generation device comprising a radio frequency generation circuit and the multi-channel power amplification architecture described in the first aspect. The radio frequency generation circuit is used to output a radio frequency signal to the multi-channel power amplification architecture. The power amplifier is used to perform power synthesis amplification according to the radio frequency signal.

[0037] In a third aspect, an embodiment of the present application further provides a communication system, which includes a baseband processing device and a radio frequency generation device as described in the second aspect. The baseband processing device is used to output a baseband signal to the radio frequency generation device. The radio frequency generation device is used to obtain a radio frequency signal according to the baseband signal and perform power synthesis amplification on the radio frequency signal.

[0038] Regarding the technical principles and beneficial effects of the second and third aspects, reference may be made to the relevant description of the first aspect, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a schematic diagram of the structure of a power amplifier;

[0040] Figure 2 A schematic diagram of the structure of a communication system provided in an embodiment of the present application;

[0041] Figure 3 A schematic diagram of the structure of a radio frequency generating device provided in an embodiment of the present application;

[0042] Figure 4 A schematic diagram of the structure of a first multi-channel power amplification architecture provided in an embodiment of the present application;

[0043] Figure 5 A schematic diagram of the structure of another first multi-channel power amplification architecture provided in an embodiment of the present application;

[0044] Figure 6 A schematic diagram of the structure of a second multi-channel power amplification architecture provided in an embodiment of the present application;

[0045] Figure 7 A schematic diagram of the structure of a third multi-channel power amplification architecture provided in an embodiment of the present application;

[0046] Figure 8 A schematic diagram of the structure of a fourth multi-channel power amplification architecture provided in an embodiment of the present application;

[0047] Fig. 9 A schematic diagram of the structure of a fifth multi-channel power amplification architecture provided in an embodiment of the present application;

[0048] Fig.10 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 1 ;

[0049] Fig.11 A schematic diagram of another sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 2 ;

[0050] Fig.12 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 3 ;

[0051] Fig.13 A method provided in the embodiment of the present application Fig.12 A schematic diagram of the frequency division equivalent structure of the sixth multi-channel power amplifier architecture recorded;

[0052] Fig.14 A method provided in the embodiment of the present application Fig.11 and Fig.12 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the first frequency band;

[0053] Fig.15 A method provided in the embodiment of the present application Fig.11 and Fig.12 A schematic diagram recording a voltage-power back-off response relationship of a sixth multi-channel power amplification architecture in a first frequency band;

[0054] Fig.16 A method provided in the embodiment of the present application Fig.11 and Fig.12 A schematic diagram recording a phase-power back-off response relationship of a sixth multi-channel power amplification architecture in a first frequency band;

[0055] Fig.17 A method provided in the embodiment of the present application Fig.11 and Fig.12 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the second frequency band;

[0056] Fig.18 A method provided in the embodiment of the present application Fig.11 and Fig.12 A schematic diagram recording a voltage-power back-off response relationship of a sixth multi-channel power amplifier architecture in a second frequency band;

[0057] Fig.19 A method provided in the embodiment of the present application Fig.11 and Fig.12 A schematic diagram recording a phase-power back-off response relationship of a sixth multi-channel power amplification architecture in a second frequency band;

[0058] Fig. 20 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 4 ;

[0059] Fig.21 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 5 ;

[0060] Fig. 22 A method provided in the embodiment of the present application Fig.21 A schematic diagram of the frequency division equivalent structure of the sixth multi-channel power amplifier architecture recorded;

[0061] Fig.23 A method provided in the embodiment of the present application Fig. 20 and Fig.21 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the first frequency band;

[0062] Fig.24 A method provided in the embodiment of the present application Fig. 20 and Fig.21 A schematic diagram recording a change relationship between voltage and power back-off response of a sixth multi-channel power amplifier architecture in a first frequency band;

[0063] Fig.25 A method provided in the embodiment of the present application Fig. 20 and Fig.21 A schematic diagram recording a change relationship between a phase and a power back-off response of a sixth multi-channel power amplifier architecture in a first frequency band;

[0064] Fig.26 A method provided in the embodiment of the present application Fig. 20 and Fig.21 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the second frequency band;

[0065] Fig. 27 A method provided in the embodiment of the present application Fig. 20 and Fig.21 A schematic diagram recording a change relationship between voltage and power back-off response of a sixth multi-channel power amplifier architecture in a second frequency band;

[0066] Fig.28 A method provided in the embodiment of the present application Fig. 20 and Fig.21 A schematic diagram recording a change relationship between a phase and a power backoff response of a sixth multi-channel power amplifier architecture in a second frequency band;

[0067] Fig.29 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 6 ;

[0068] Fig.30 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 7 ;

[0069] Fig.31 A method provided in the embodiment of the present application Fig.29 and Fig.30 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the first frequency band;

[0070] Fig.32 A method provided in the embodiment of the present application Fig.29 and Fig.30 A schematic diagram recording a change relationship between voltage and power back-off response of a sixth multi-channel power amplifier architecture in a first frequency band;

[0071] Fig.33 A method provided in the embodiment of the present application Fig.29 and Fig.30 A schematic diagram recording a change relationship between a phase and a power back-off response of a sixth multi-channel power amplifier architecture in a first frequency band;

[0072] Fig.34 A method provided in the embodiment of the present application Fig.29 and Fig.30 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the second frequency band;

[0073] Fig.35 A method provided in the embodiment of the present application Fig.29 and Fig.30 A schematic diagram recording a change relationship between voltage and power back-off response of a sixth multi-channel power amplifier architecture in a second frequency band;

[0074] Fig.36 A method provided in the embodiment of the present application Fig.29 and Fig.30 A schematic diagram recording a change relationship between a phase and a power backoff response of a sixth multi-channel power amplifier architecture in a second frequency band;

[0075] Fig.37 A schematic diagram of the structure of a microstrip frequency-differential power division circuit provided in an embodiment of the present application;

[0076] Fig.38 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 8 ;

[0077] Fig.39 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 9 ;

[0078] Fig.40 A method provided in the embodiment of the present application is as follows Fig.39 A schematic diagram of a frequency division equivalent structure of the sixth multi-channel power amplifier architecture recorded;

[0079] Fig.41 A method provided in the embodiment of the present application Fig.38 and Fig.39 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the first frequency band;

[0080] Fig.42 A method provided in the embodiment of the present application Fig.38 and Fig.39 A schematic diagram recording a change relationship between voltage and power back-off response of a sixth multi-channel power amplifier architecture in a first frequency band;

[0081] Fig.43 A method provided in the embodiment of the present application Fig.38 and Fig.39 A schematic diagram recording a change relationship between a phase and a power back-off response of a sixth multi-channel power amplifier architecture in a first frequency band;

[0082] Fig.44 A method provided in the embodiment of the present application Fig.38 and Fig.39 A schematic diagram recording the efficiency-power back-off of the sixth multi-channel power amplifier architecture in the second frequency band;

[0083] Fig.45 A method provided in the embodiment of the present application Fig.38 and Fig.39 A schematic diagram recording a change relationship between voltage and power back-off response of a sixth multi-channel power amplifier architecture in a second frequency band;

[0084] Fig.46 A method provided in the embodiment of the present application Fig.38 and Fig.39 A schematic diagram recording a change relationship between a phase and a power backoff response of a sixth multi-channel power amplifier architecture in a second frequency band;

[0085] Fig.47 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 10 ;

[0086] Fig.48 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 10 one;

[0087] Fig.49 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 10 two;

[0088] Fig.50 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 10 three;

[0089] Fig.51 A schematic diagram of a sixth multi-channel power amplifier architecture provided in an embodiment of the present application Figure 10 Four. DETAILED DESCRIPTION

[0090] It should be noted that the terms "first", "second", etc. involved in the embodiments of the present application are only used to distinguish features of the same type and cannot be understood as indicating relative importance, quantity, order, etc.

[0091] The terms "exemplary" or "for example" and the like in the embodiments of the present application are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of the terms "exemplary" or "for example" is intended to present the related concepts in a specific way.

[0092] The terms "coupling" and "connection" involved in the embodiments of the present application should be understood in a broad sense. For example, they may refer to a direct physical connection, or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors, microstrip lines, impedance transformation lines, impedance inverter lines, filters or other electronic devices.

[0093] First, some basic concepts involved in the embodiments of the present application are explained:

[0094] Power amplifier: Power amplifiers can be divided into power tube type power amplifiers and switch type power amplifiers. Power tube type power amplifiers can be further divided into Class A power amplifiers, Class B power amplifiers, Class AB power amplifiers and Class C power amplifiers. Among them, Class A power amplifiers, Class B power amplifiers and Class AB power amplifiers are linear power amplifiers. Class C power amplifiers are nonlinear power amplifiers. In the embodiment of the present application, for the Class C power amplifier, we can also divide the Class C degree according to the different minimum turn-on working power points of the Class C power amplifier, for example, into: shallow Class C, Class C, deep Class C. This type of division is only used in the embodiment of the present application to represent that between multiple Class C power amplifiers, according to the difference in the power tube gate voltage configuration, the minimum turn-on working power point is also different. The Class A power amplifier has the best linearity and is suitable for power amplification of small signal DC signals. The Class B power amplifier works in half a cycle. The single-ended Class B power amplifier will produce a lot of nonlinear distortion. It is rarely used for power amplification of RF signals. It is usually based on two Class B power amplifiers to form a push-pull structure to form a positive half cycle and a negative half cycle, which is applied to the power amplification of audio signals. Class AB power amplifier is a combination of Class A power amplifier and Class B power amplifier. The efficiency and linearity of Class AB power amplifier are between Class A power amplifier and Class B power amplifier, and it is widely used in the power amplification of RF signals. Class C power amplifier has nonlinearity and is often used in multi-channel power amplifier structure with power synthesis. Figure 1 As shown in FIG. 1 , a basic structure of a single power tube type power amplifier is shown. In the figure, a gate bias circuit P1 is provided at the gate of the amplifying power tube M, and a drain bias circuit P2 is provided at the drain of the amplifying power tube M. The bias state between the electrodes of the amplifying power tube M is controlled by the gate bias circuit P1 and the drain bias circuit P2, so that the amplifying power tube M is in a power amplifying state. The amplifying power tube M in the power amplifying state can perform power amplification on the input signal.

[0095] Power backoff of power amplifier: With the development of wireless communication technology, the modulation technology of RF signals has gradually become more complex, which makes the peak to average power ratio (PAPR) of the output RF signal larger. The RF signal input to the power amplifier is a modulated signal obtained by modulating data information onto a carrier signal. The amount of power backoff is related to the peak to average power ratio of the modulated signal.

[0096] Working efficiency of power amplifier: The working efficiency of power amplifier can be reflected by the drain working efficiency of power tube M, that is, the proportion of drain DC provided by the system converted into the RF signal actually output by the power amplifier. The working efficiency of power amplifier will decrease as the output power decreases.

[0097] The present application embodiment provides a communication system, such as Figure 2 As shown, the communication system 10000 includes a baseband processing device 1000 and a radio frequency generation device 2000. The baseband processing device 1000 is coupled to the radio frequency generation device 2000. The baseband processing device 1000 is used to output a baseband signal to the radio frequency generation device 2000; the radio frequency generation device 2000 is used to obtain a radio frequency signal according to the baseband signal and perform power synthesis amplification on the radio frequency signal.

[0098] like Figure 3 As shown, the RF generation device 2000 includes a RF generation circuit 100 and a multi-channel power amplification architecture 200. The output end of the RF generation circuit 100 is coupled to the multi-channel power amplification architecture 200. The RF generation circuit 100 is used to output a RF signal to the multi-channel power amplification architecture 200; and the multi-channel power amplification architecture 200 is used to perform power synthesis amplification according to the RF signal.

[0099] Exemplarily, the radio frequency generating device 2000 may be a remote radio unit (RRU) or an active antenna unit (AAU), etc. The baseband processing device 1000 may be a building base band unit (BBU), etc.

[0100] With the development of wireless communication technology, the amount of data information that needs to be carried on RF signals has also increased rapidly. Along with this, the demand for bandwidth of RF signals has increased. In order to ensure the efficiency of high peak-to-average ratio RF signal power amplification, it is necessary to increase the power back-off as much as possible. The power amplifier is the device that consumes the most power in the transmitting device. When the power is backed off in large quantities, how to ensure that the power amplifier maintains a high efficiency is a major problem. At the same time, in the design of power amplifiers, improving back-off efficiency and expanding working bandwidth are contradictory requirements, and both have certain design difficulties. The design of high-power, wide-bandwidth, large back-off and high-efficiency power amplifiers has always been a difficult problem in the industry. There are mainly the following difficulties: Difficulty 1. From the perspective of the design of high-efficiency power amplifiers, improving back-off efficiency and expanding working bandwidth are in a contradictory relationship. The architecture design of most power amplifiers needs to balance bandwidth and efficiency, and cannot achieve the ultimate efficiency expectations. Difficulty 2. From the perspective of the design of high-power power amplifiers, the power tube of the power amplifier has a smaller matching impedance and a larger parasitic parameter effect, which will seriously affect the design of the solution. Difficulty 3: From the design perspective of a wideband multi-frequency power amplifier, video bandwidth (VBW) is an important factor affecting broadband concurrency, and the control of VBW of a broadband power amplifier is also extremely challenging. Difficulty 4: The output end of the power amplifier in the base station needs to be connected to an isolator to ensure that the performance of the power amplifier is not affected by the back-end impedance mismatch. The performance of the high-power broadband power amplifier output isolator will greatly affect the output insertion loss, linearity and other performance.

[0101] In some possible implementations, the multi-channel power amplifier architecture 200 may be a first power amplifier of a Doherty architecture. Figure 4 As shown, the first multi-channel power amplification architecture 200A includes a main amplification branch 210A, a slave amplification branch 220A, an impedance inversion line 230A, and an impedance transformation line 240A. Among them, the main amplification branch 210A works in class B or class AB, and the slave amplification branch 220A works in class C. When the signal power of the input RF signal is relatively small, the main amplification branch 210A is turned on to work. When the signal power of the input RF signal is relatively large, the slave amplification branch 220A is turned on to work. When the slave amplification branch 220A is turned on, the impedance of the junction between the main amplification branch 210A and the slave amplification branch 220A is impedance-inverted with the impedance of the main amplification branch 210A through the impedance inversion line 230A, thereby realizing power synthesis of the RF signals output by the two branches under load traction, and impedance matching is performed based on the impedance transformation line 240A. Figure 4The Doherty architecture and its variant architecture shown in the figure can maintain good power back-off and working efficiency in single-frequency or dual-frequency signal amplification. For the traditional two-way Doherty amplifier, increasing the power ratio of the auxiliary amplifier and the main amplifier can increase the back-off to a certain extent, but the efficiency pit between the back-off power point and the saturation power point is not conducive to the overall efficiency of the modulated signal. Therefore, the Figure 4 The two-way Doherty architecture shown in FIG. 1 is expanded to a three-way Doherty architecture. Figure 5 Figure (a) and Figure 5 As shown in Figure (b), there are two different forms of Doherty architecture. In the three-way Doherty architecture, there are two slave amplification branches 220A, one of which works in shallow C class and the other slave amplification branch 220A works in deep C class, that is, the minimum operating power point of the shallow C class slave amplification branch 220A is less than the minimum operating power point of the deep C class slave amplification branch 220A. The three-way Doherty architecture can fill the efficiency pit while increasing the back-off amount. But as Figure 5 In the conventional three-way Doherty architecture shown in FIG. (a), the main amplifying branch 210A has only one impedance pulling process, and its load-pull ratio (LPR) is relatively small. Figure 5 In the improved three-way Doherty architecture shown in FIG. (b), the main amplifying branch 210A can achieve two load pulls, achieving a relatively large LPR. Since the main amplifying branch 210A is load pulled twice, its power fallback range will also be relatively large. Figure 4 and Figure 5 In order to expand the back-off amount in the architecture shown, it is necessary to increase the number of impedance inversion lines 230A and slave amplification branches 220A, which increases the device cost and device area of ​​the first multi-channel power amplification architecture 100A. When the number of slave amplification branches 220A reaches a certain level, the amplification gain coefficient of the first multi-channel power amplification architecture 100A will decrease. In addition, the impedance inversion line 230A has a certain frequency response, which will limit the bandwidth, making it extremely difficult for engineers to perform broadband design in the first multi-channel power amplification architecture 100A. For example, in Figure 5 In the two three-way Doherty architectures shown, as the number of branches increases, the impedance inversion line 230A also increases, which greatly limits the working bandwidth. Therefore, how to improve the working bandwidth and power amplifier performance of the three-way Doherty architecture and the power amplifier architecture with more than three channels is a major problem.

[0102] In some possible implementations, the multi-channel power amplifier architecture 200 may be a second power amplifier based on a load modulated balanced amplifier (LMBA) architecture or a sequential load modulated balanced amplifier (SLMBA) architecture. Figure 6 As shown, the second multi-channel power amplification architecture 200B may include two balanced couplers 210B, two balanced amplifier circuits 220B and a control amplifier circuit 230B. Among them, the third end and the fourth end of the balanced coupler 210B of the front stage are respectively coupled with the input ends of the two balanced amplifier circuits 220B, and are coupled with the first end and the second end of the balanced coupler 210B of the rear stage through the output ends of the two balanced amplifier circuits 220B. The output end of the control amplifier circuit 230B is coupled with the third end of the balanced coupler 210B of the rear stage. The fourth end of the balanced coupler 210B of the rear stage serves as the output end of the second multi-channel power amplification architecture 200B. In some examples, the two balanced amplifier circuits 220B are main amplifiers working in class AB, and the control amplifier circuit 230B is a slave amplifier working in class C. At this time, the second multi-channel power amplification architecture 200B is a power amplifier based on LMBA. In some examples, the two balanced amplifier circuits 220B are slave amplifiers operating in class C, and the control amplifier circuit 230B is a master amplifier operating in class AB. In this case, the second multi-channel power amplifier architecture 200B is a power amplifier based on SLMBA. Figure 6 In the embodiment shown, the third and fourth ends of the front-stage balanced coupler 210B output two RF signals with a phase difference of 90°. The two RF signals are power-amplified by the balanced amplifier circuit 220B and then output to the back-stage balanced coupler 210B. The RF signal output by the control amplifier circuit 230B coupled to the back-stage balanced coupler 210B can control the back-stage balanced coupler 210B to adjust the amplitude and phase of the three RF signals, so that each frequency band obtains the best load-pulling effect, and outputs the power-synthesized RF signal from the fourth end of the back-stage balanced coupler 210B. However, in the case of Figure 6 In the design of the scheme shown, first, in order to meet the current base station needs, a power ratio scheme in which the operating power of the slave amplifier is higher than the operating power of the master amplifier is often used. The efficiency pit problem caused by this cannot be ignored. Second, VBW control is very difficult in broadband scenarios. In concurrent scenarios, the problems of power, efficiency, and linear performance deterioration still exist. Third, a balanced coupler is used as the output power synthesis unit in the architecture. Its power capacity is a major challenge in the current high-power power amplifier design. Fourth, it is difficult to achieve good performance with a broadband isolator connected to the output of a single-output power amplifier solution.

[0103] In some possible implementations, the multi-channel power amplifier architecture 200 may be a third multi-channel power amplifier architecture based on a dual-frequency single-output Doherty architecture with slave sharing. Figure 7 As shown, the third multi-channel power amplification architecture 200C includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-frequency shared slave amplifier circuit PA3, a first impedance inversion network INV1, and a second impedance transformation network INV2. Among them, the first single-frequency main amplifier circuit PA1 works in class AB, and is used to power amplify the radio frequency signal of the first frequency band. The second single-frequency main amplifier circuit PA2 works in class AB, and is used to power amplify the radio frequency signal of the second frequency band. The dual-frequency shared slave amplifier circuit PA3 works in class C, and is used to power amplify the radio frequency signals of the first frequency band and the second frequency band. The output end of the first single-frequency main amplifier circuit PA1 and the output end of the second single-frequency main amplifier circuit PA2 are respectively coupled to the output end of the dual-frequency shared slave amplifier circuit PA3 through a first impedance inversion network INV1 and then coupled to the second impedance change network INV2. Among them, the first single-frequency main amplifier circuit PA1 and the dual-frequency shared slave amplifier circuit PA3 can form a doherty architecture with respect to the first frequency band through the corresponding first impedance inversion network INV1 and the second impedance transformation network INV2. The second single-frequency main amplifier circuit PA2 and the dual-frequency shared slave amplifier circuit PA3 can form a Doherty architecture for the second frequency band through the corresponding first impedance inverter network INV1 and second impedance conversion network INV2. Figure 7 The third multi-channel power amplifier architecture 200C shown can avoid the problem of the main channel entering the saturation zone in advance due to the interaction of concurrent signals in the concurrent scenario, and solve the saturation power, efficiency and linear deterioration problems in the concurrent scenario. However, in the design of high-power broadband power amplifiers, the open-circuit characteristics of the amplifier circuit will add great difficulty to the design. In addition, the output of the broadband single-output solution needs to be connected to a broadband isolator, and the current design of broadband isolators is difficult to achieve good performance.

[0104] In some possible implementations, the multi-channel power amplifier architecture 200 may be a fourth multi-channel power amplifier architecture based on a dual-frequency dual-output Doherty architecture with slave sharing. Figure 8As shown, the fourth multi-channel power amplifier architecture 200D includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-frequency shared slave amplifier circuit PA3, two first impedance inversion networks INV1, two second impedance change networks INV2, a front-stage inter-frequency power divider F1, and a rear-stage inter-frequency power divider F2. The first single-frequency main amplifier circuit PA1 and the second single-frequency main amplifier circuit PA2 work in class AB, respectively, and the dual-frequency shared slave amplifier circuit PA3 works in class C. Among them, the two branch ends of the front-stage inter-frequency power divider F1 respectively input the radio frequency signals of the first frequency band and the second frequency band, and the combining end of the front-stage inter-frequency power divider F1 outputs the radio frequency signals of the first frequency band and the second frequency band to the input end of the dual-frequency shared slave amplifier circuit PA3. The output end of the dual-frequency shared slave amplifier circuit PA3 outputs the amplified radio frequency signals of the first frequency band and the second frequency band to the combining end of the rear-stage inter-frequency power divider F2. The output ends of the first single-frequency main amplifier circuit PA1 and the second single-frequency main amplifier circuit PA2 are respectively coupled to a first impedance inverter network INV1, and are coupled to the two branch ends of the subsequent heterofrequency power divider F2 through the corresponding first impedance inverter network INV1. One branch end of the subsequent heterofrequency power divider F2 outputs the RF signal of the first frequency band to the first impedance inverter network INV1 corresponding to the first single-frequency main amplifier circuit PA1, so as to form a Doherty architecture with the corresponding second impedance transformation network INV2 to perform power synthesis of the RF signal of the first frequency band; the other branch end of the subsequent heterofrequency power divider F2 outputs the RF signal of the second frequency band to the first impedance inverter network INV1 corresponding to the second single-frequency main amplifier circuit PA2, so as to form a Doherty architecture with the corresponding second impedance transformation network INV2 to perform power synthesis of the RF signal of the second frequency band. In the embodiments of the present application, Figure 8 In the architecture shown, a heterodyne power divider is used to realize dual output from different frequency bands of the amplifier circuit. In this broadband dual-output solution, the power amplifier output signal in the communication system can be connected to the antenna using two narrowband isolators, reducing the impact of the broadband isolator on the link performance. However, in this architecture, the heterodyne power divider must not only meet the heterodyne power division characteristics, but also participate in the load pulling of the RF signals in the two frequency bands, which increases the design difficulty. At the same time, its insertion loss will also cause the performance of the solution to deteriorate, making the design more difficult. In addition, the open-circuit characteristics of the amplifier circuit are still a design difficulty. In addition, under this architecture, each frequency band can only be equivalent to a two-way Doherty architecture, there are only two power saturation points, and the power back-off amount is small.

[0105] In some possible implementations, the multi-channel power amplifier architecture 200 may be a fifth multi-channel power amplifier architecture based on a bridge to implement a dual-frequency dual-output Doherty architecture under heterodyne power division. Fig. 9As shown, the fifth multi-channel power amplification architecture 200E includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a first dual-frequency shared slave amplifier circuit PA3, a second dual-frequency shared slave amplifier circuit PA4, two first impedance inversion networks INV1, a first bridge B1, and a second bridge B2. Among them, the first end and the third end of the first bridge B1 are used to input the radio frequency signal of the first frequency band and the radio frequency signal of the second frequency band, and the second end and the third end of the first bridge B1 are respectively connected to the input end of the first dual-frequency shared slave amplifier circuit PA3 and the input end of the second dual-frequency shared slave amplifier circuit PA4. The output end of the first dual-frequency shared slave amplifier circuit PA3 and the output end of the second dual-frequency shared slave amplifier circuit PA4 are coupled to the first end and the third end of the second bridge B2 respectively. The input end of the first single-frequency main amplifier circuit PA1 is used to input the radio frequency signal of the first frequency band. The output end of the first single-frequency main amplifier circuit PA1 is coupled to the second end of the second bridge B2 through the corresponding first impedance inversion network to perform power synthesis in the first frequency band. The input end of the second single-frequency main amplifier circuit PA2 is used to input the RF signal of the second frequency band. The output end of the second single-frequency main amplifier circuit PA2 is coupled to the fourth end of the second bridge B2 through the corresponding first impedance inverter network INV1 to perform power synthesis of the RF signal of the second frequency band. Fig. 9 In the fifth multi-channel power amplifier architecture 200E shown, the phase characteristics of the second bridge B2 combined with the isolation circuit can realize the function of different frequency power division, so that the second end and the fourth end of the second bridge B2 can output RF signals of different frequency bands, and the RF signals of different frequency bands can be power synthesized with the first single-frequency main amplifier circuit PA1 or the second single-frequency main amplifier circuit PA2 to obtain the power synthesized RF signal of the first frequency band or the power synthesized RF signal of the second frequency band. But in Fig. 9 In the implementation shown, the insertion loss of the bridge itself is large, which will affect the overall performance of the power amplifier. At the same time, the bridge is large in size, which is not conducive to the miniaturization and integration of power amplifier components. In addition, the characteristic impedance design of the bridge is relatively fixed, and it can only be designed according to a certain characteristic impedance, which will limit the design freedom of the power amplifier matching circuit, and greatly increase the design difficulty and application difficulty under the multi-channel amplification architecture.

[0106] In order to reduce the design difficulty of a power amplifier with high back-off, high efficiency and large power bandwidth, in some possible implementations, such as Fig.10As shown, the sixth multi-channel power amplification architecture 200F includes a first main amplifier circuit 210F, a second main amplifier circuit 220F, a first slave amplifier circuit 230F, a second slave amplifier circuit 240F and a first inter-frequency power division circuit 250F. The first inter-frequency power division circuit 250F includes at least one microstrip line. The output end of the first main amplifier circuit 210F, the output end of the second main amplifier circuit 220F, the output end of the first slave amplifier circuit 230F and the output end of the second slave amplifier circuit 240F are respectively coupled to the first inter-frequency power division circuit 250F. Wherein:

[0107] The output end of the first master amplifier circuit 210F is used to output the first RF signal. The output end of the second master amplifier circuit 220F is used to output the second RF signal. The output end of the first slave amplifier circuit 230F and the output end of the second slave amplifier circuit 240F are used to output a RF combined frequency signal, which includes the first RF signal and the second RF signal. The first output end of the first inter-frequency power division circuit 250F is used to output the power synthesis of the first RF signal. The second output end of the first inter-frequency power division circuit 250F is used to achieve the power synthesis of the second RF signal.

[0108] In this application Fig.10 In the illustrated embodiment, the inter-frequency power division is not performed based on the bridge, but the first inter-frequency power division is performed based on the first inter-frequency power division circuit 250F having the inter-frequency power division function. The first inter-frequency power division circuit 250F is coupled with the first main amplifier circuit 210F, the second main amplifier circuit 220F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F respectively. The first main amplifier circuit 210F can power amplify the radio frequency signal of the first frequency band to obtain the first radio frequency signal, and the second main amplifier circuit 220F can power amplify the radio frequency signal of the second frequency band to obtain the second radio frequency signal. The first slave amplifier circuit 230F and the second slave amplifier circuit 240F can power amplify the radio frequency signal including the first frequency band and / or the second frequency band to obtain a radio frequency composite signal that can include the first radio frequency signal and / or the second radio frequency signal. The first inter-frequency power division circuit 250F can distinguish the first RF signal from the second RF signal based on the inter-frequency power division function, and can realize power synthesis of the first RF signal output by the first main amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F based on the impedance characteristics of the microstrip line, and can also realize power synthesis of the second RF signal output by the second main amplifier circuit 220F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F.

[0109] In some possible implementations, two hetero-frequency power molecular circuits may be used in the first hetero-frequency power division circuit 250F, and both hetero-frequency power molecular circuits are used to perform hetero-frequency power division on the first RF signal and the second RF signal. In this case, the first hetero-frequency power division circuit 250F may include a connecting microstrip line, a first hetero-frequency power molecular circuit, and a second hetero-frequency power molecular circuit. The first hetero-frequency power molecular circuit is coupled to the second hetero-frequency power molecular circuit through a connecting microstrip line. Under this architecture, the connection forms of the first hetero-frequency power molecular circuit and the second hetero-frequency power molecular circuit are different, and different hetero-frequency power division methods may be used. Here are some examples:

[0110] Example 1 of the connection relationship between the first hetero-frequency power molecular circuit and the second hetero-frequency power molecular circuit: Fig.11 As shown, the first end of the microstrip line LL is coupled to the combining end of the first inter-frequency power molecular circuit 251F, and the second end of the microstrip line LL is coupled to the combining end of the second inter-frequency power molecular circuit 252F. The output end of the first slave amplifier circuit 230F is coupled to the combining end of the first inter-frequency power molecular circuit 251F. The output end of the first master amplifier circuit 210F is coupled to the first branch end of the first inter-frequency power molecular circuit 251F, and the second branch end of the first inter-frequency power molecular circuit 251F is the second output end of the first inter-frequency power division circuit 250F. The output end of the second slave amplifier circuit 240F is coupled to the combining end of the second inter-frequency power molecular circuit 252F. The output end of the second master amplifier circuit 220F is coupled to the first branch end of the second inter-frequency power molecular circuit 252F, and the second branch end of the second inter-frequency power molecular circuit 252F is the first output end of the first inter-frequency power division circuit 250F.

[0111] For example, Fig.12 As shown, in Fig.11In the illustrated embodiment, the first inter-frequency power molecular circuit 251F includes a first microstrip line L1, a second microstrip line L2, a first isolation circuit ISO1 and a second isolation circuit ISO2; the second inter-frequency power molecular circuit 252F includes a third microstrip line L3, a fourth microstrip line L4, a third isolation circuit ISO3 and a fourth isolation circuit ISO4. Wherein: the first end of the first microstrip line L1 and the first end of the second microstrip line L2 are coupled as the combined end of the first inter-frequency power molecular circuit 251F. The second end of the first microstrip line L1 is used as the first branch end of the first inter-frequency power molecular circuit 251F. The second end of the second microstrip line L2 is used as the second branch end of the first inter-frequency power molecular circuit 251F. The first end of the third microstrip line L3 and the first end of the fourth microstrip line L4 are coupled as the combined end of the second inter-frequency power molecular circuit 252F. The second end of the third microstrip line L3 is used as the first branch end of the second inter-frequency power molecular circuit 252F. The second end of the fourth microstrip line L4 is used as the second branch end of the second inter-frequency power molecular circuit 252F. The first isolation circuit ISO1 is coupled to the first branch end of the first inter-frequency power molecular circuit 251F; the second isolation circuit ISO2 is coupled to the second branch end of the first inter-frequency power molecular circuit 251F; the third isolation circuit ISO3 is coupled to the first branch end of the second inter-frequency power molecular circuit 252F; the fourth isolation circuit ISO4 is coupled to the second branch end of the second inter-frequency power molecular circuit 252F. Among them: the first isolation circuit ISO1 presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The second isolation circuit ISO2 presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The third isolation circuit ISO3 presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The fourth isolation circuit ISO4 presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal.

[0112] For example, Fig.11 and Fig.12 Taking the structure shown as an example in which only the RF signal of the first frequency band is input, the first main amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F input the RF signal of the first frequency band. In the case of no RF signal of the second frequency band being input, the second main amplifier circuit 220F does not work. The power-amplified RF combined frequency signal output by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F only includes the power-amplified first RF signal. At this time, Fig.12 The circuit can be equivalent to Fig.13The structure shown in Figure (a) is used to power amplify the RF signal of the first frequency band. When the first main amplifier circuit 210F is turned on, and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are not turned on, the output first RF composite signal only includes one first RF signal output by the first main amplifier circuit 210F. When the first slave amplifier circuit 230F and / or the second slave amplifier circuit 240F are also turned on, the output first RF composite signal is a signal for power synthesis of multiple first RF signals. Taking the first frequency band of 1.8GHz as an example, Fig.14 for Fig.12 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the first frequency band under the architecture. Fig.15 for Fig.12 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.16 for Fig.12 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.14 , Fig.15 and Fig.16 As shown, it can be seen Fig.11 and Fig.12 In the embodiment shown, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB respectively, and maintains operation at Figure 5 Figure (a) and Fig.13 (a) shows the state of the traditional three-way Doherty circuit.

[0113] For example, Fig.12Taking the structure shown as an example in which only the RF signal of the second frequency band is input, the second main amplifier circuit 220F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F input the RF signal of the second frequency band. In the case of no RF signal of the first frequency band being input, the first main amplifier circuit 210F does not work. The power-amplified RF combined frequency signal output by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F only includes the power-amplified second RF signal. At this time, Fig.12 The circuit can be equivalent to Fig.13 The structure shown in Figure (b) is used to power amplify the RF signal in the second frequency band. When the second main amplifier circuit 220F is turned on, and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are not turned on, the output second RF composite signal only includes one second RF signal output by the second main amplifier circuit 220F. When the first slave amplifier circuit 230F and / or the second slave amplifier circuit 240F are also turned on, the output second RF composite signal is a signal for power synthesis of multiple second RF signals. Taking the second frequency band of 2.2GHz as an example, Fig.17 for Fig.12 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the second frequency band under the architecture. Fig.18 for Fig.12 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the second frequency band and the input power under the architecture. Taking the first slave amplifier circuit 230F as an example, the second slave amplifier circuit 240F is turned on after the first slave amplifier circuit 230F, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.19 for Fig.12 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the second frequency band of the architecture and the input power. Taking the first slave amplifier circuit 230F as an example, the second slave amplifier circuit 240F is turned on after the first slave amplifier circuit 230F, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.17 , Fig.18 and Fig.19 As shown, it can be seen Fig.11 and Fig.12 In the embodiment shown, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the second frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB respectively, and it maintains working at such a point. Figure 5 Figure (a) and Fig.13(b) shows the state of the traditional three-way Doherty circuit.

[0114] For example, Fig.12 The structure shown in FIG. 1 is used as an example to simultaneously input radio frequency signals of the first frequency band and the second frequency band. Fig.12 As shown, the first isolation circuit ISO1 presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal, so that the first branch end of the first frequency-differential power molecule circuit 251F can present a stop-band characteristic to the second radio frequency signal and a pass-band characteristic to the first radio frequency signal. Therefore, based on the corresponding open-circuit characteristic and short-circuit characteristic of the first isolation circuit ISO1, the second isolation circuit ISO2, the third isolation circuit ISO3 and the fourth isolation circuit ISO4, absorption isolation of the first radio frequency signal or the second radio frequency signal can be achieved at the corresponding position, so that when the radio frequency signals of the first frequency band and the second frequency band are input at the same time, the first frequency band and the second frequency band can be realized without being affected. Fig.13 The effects of load pulling and power combining for the structure shown.

[0115] In summary, Fig.11 and Fig.12 In the structure of the embodiment shown, dual-frequency shared power synthesis under a multi-channel Doherty architecture can be realized based on a microstrip line structure. In addition, when a microstrip line is used to realize heterodyne power division, the device area can be greatly reduced and the impedance characteristics of the heterodyne power division structure of the bridge structure can be eliminated. The limitation on design matching is also eliminated, and it is easier to improve the design into other power amplification structures, and it is easier to increase and expand other power amplification structures to realize the design of more branches. In addition, Fig.12 As shown, a narrowband isolator can be used for isolation, and the power synthesis process occurs after the isolator. In this case, the problems of large insertion loss and poor linearity caused by the use of broadband isolators can be avoided. At the same time, since the width isolator itself is also difficult to design, the design difficulty can be reduced on the basis of avoiding the use of wide-band isolators.

[0116] Example 2 of the connection relationship between the first inter-frequency power molecular circuit and the second inter-frequency power molecular circuit: one of the two inter-frequency power molecular circuits of the first inter-frequency power splitting circuit 250F is used to realize the power synthesis of the first radio frequency signal, and the other inter-frequency power molecular circuit is used to realize the power synthesis of the second radio frequency signal. Fig. 20As shown, the first end of the microstrip line LL is coupled to the combining end of the first inter-frequency power molecular circuit 251F, and the second end of the microstrip line LL is coupled to the combining end of the second inter-frequency power molecular circuit 252F. The output end of the first slave amplifier circuit 230F is coupled to the combining end of the first inter-frequency power molecular circuit 251F; the output end of the first master amplifier circuit 210F is coupled to the first branch end of the first inter-frequency power molecular circuit 251F and serves as the first output end of the first inter-frequency power division circuit 250F. The output end of the second slave amplifier circuit 240F is coupled to the combining end of the second inter-frequency power molecular circuit 252F; the output end of the second master amplifier circuit 220F is coupled to the first branch end of the second inter-frequency power molecular circuit 252F and serves as the second output end of the first inter-frequency power division circuit 250F.

[0117] For example, Fig.21 As shown, the first inter-frequency power molecular circuit 251F includes the fifth microstrip line L5, the sixth microstrip line L6 and the fifth isolation circuit ISO5; the second inter-frequency power molecular circuit 252F includes the seventh microstrip line L7, the eighth microstrip line L8 and the sixth isolation circuit ISO6. Wherein: the first end of the fifth microstrip line L5 serves as the combining end of the first inter-frequency power molecular circuit 251F, and the second end of the fifth microstrip line L5 serves as the first branching end of the first inter-frequency power molecular circuit 251F; the output end of the first main amplifier circuit 210F is coupled with the first end of the sixth microstrip line L6, and the second end of the sixth microstrip line L6 is coupled with the second end of the fifth microstrip line L5. The first end of the seventh microstrip line L7 serves as the combining end of the second inter-frequency power molecular circuit 252F, and the second end of the seventh microstrip line L7 serves as the first branching end of the second inter-frequency power molecular circuit 252F. The output end of the second main amplifier circuit 220F is coupled with the first end of the eighth microstrip line L8, and the second end of the eighth microstrip line L8 is coupled with the second end of the seventh microstrip line L7. The fifth isolation circuit ISO5 is coupled to the first branch end of the first inter-frequency power molecular circuit 251F. The sixth isolation circuit ISO6 is coupled to the first branch end of the second inter-frequency power molecular circuit 252F. Wherein: the fifth isolation circuit ISO5 presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The sixth isolation circuit ISO6 presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. In the embodiment of the present application, the fifth isolation circuit ISO5 and the sixth isolation circuit ISO6 can absorb or filter out the radio frequency signal that does not need to be power synthesized in the inter-frequency power division process.

[0118] For example, Fig.21 As an example, the structure shown in the figure only inputs the first RF signal of the first frequency band, and the following equivalent results can be obtained: Fig. 22 (a) shows the multi-way Doherty architecture. Fig. 22 The structure of graph (a) is Figure 5The improved three-way Doherty architecture shown in FIG. (b) is shown in FIG. Based on the open-circuit characteristics and short-circuit characteristics of the fifth isolator ISO5 and the sixth isolator ISO6, Fig. 22 The working principle of Figure (a) can be referred to Figure 5 The working principle of the improved three-way Doherty architecture in FIG. (b) will not be described here. Taking the first frequency band of 1.8 GHz as an example, Fig.23 for Fig.21 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the first frequency band under the architecture. Fig.24 for Fig.21 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.25 for Fig.21 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.23 , Fig.24 and Fig.25 As shown, it can be seen Fig. 20 and Fig.21 In the embodiment shown, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB respectively, and maintains operation at Figure 5 Figure (b) and Fig. 22 (a) shows the state of the improved three-way Doherty architecture.

[0119] about Fig.21 The structure shown in the figure only inputs the second frequency band, or inputs the first frequency band and the second frequency band at the same time. The relevant principle can refer to the aforementioned Fig.21 The structure shown in the figure inputs the relevant description of the first frequency band, and refers to the aforementioned Fig.12 The description of the open circuit characteristics and short circuit characteristics of the isolator in the embodiment shown will not be repeated here. Taking the second frequency band of 2.2 GHz as an example, Fig.26 for Fig.21Schematic diagram of the response relationship between the power backoff amount and working efficiency in the second frequency band under the architecture. Fig. 27 for Fig.21 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the second frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work after the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.28 for Fig.21 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the second frequency band of the architecture and the input power. In the figure, taking the first slave amplifier circuit 230F as an example, the second slave amplifier circuit 240F is turned on after the first slave amplifier circuit 230F, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.26 , Fig. 27 and Fig.28 As shown, it can be seen Fig. 20 and Fig.21 In the embodiment shown, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the second frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB respectively, and it maintains working at such a point. Figure 5 Figure (b) and Fig. 22 (b) shows the state of the improved three-way Doherty circuit.

[0120] In this application, for example Fig. 20 and Fig.21 In the structure of the embodiment shown, dual-frequency shared power synthesis under a multi-channel Doherty architecture can be realized based on a microstrip line structure. In addition, when a microstrip line is used to realize heterodyne power division, the device area can be greatly reduced and the impedance characteristics of the heterodyne power division structure of the bridge structure can be eliminated. The limitation on design matching is also eliminated, and it is easier to improve the design into other power amplification structures, and it is easier to increase and expand other power amplification structures to realize the design of more branches. In addition, Fig.21 As shown, a narrowband isolator can be used for isolation, and the power synthesis process occurs after the isolator. In this case, the problems of large insertion loss and poor linearity caused by the use of broadband isolators can be avoided. At the same time, since the width isolator itself is also difficult to design, the design difficulty can be reduced on the basis of avoiding the use of wide-band isolators.

[0121] Example 3 of the connection relationship between the first inter-frequency power molecular circuit and the second inter-frequency power molecular circuit: One of the two inter-frequency power molecular circuits in the first inter-frequency power division circuit 250F is used to realize the inter-frequency power division of the first RF signal and the second RF signal output by the two main amplifier circuits, and the other inter-frequency power molecular circuit is used to realize the inter-frequency power division of the first RF composite signal and the second RF composite signal obtained by power synthesis. At this time, Fig.29 As shown, the first branch end of the first inter-frequency power molecular circuit 251F is coupled to the output end of the first main amplifier circuit 210F, the second branch end of the first inter-frequency power molecular circuit 251F is coupled to the output end of the second main amplifier circuit 220F, the combining end of the first inter-frequency power molecular circuit 251F and the output end of the first slave amplifier circuit 230F are respectively coupled to the first end connected to the microstrip line LL. The combining end of the second inter-frequency power molecular circuit 252F and the output end of the second slave amplifier circuit 240F are respectively coupled to the second end connected to the microstrip line LL, the first branch end of the second inter-frequency power molecular circuit 252F serves as the first output end of the first inter-frequency power division circuit 250F, and the second branch end of the second inter-frequency power molecular circuit 252F serves as the second output end of the first inter-frequency power division circuit 250F.

[0122] For example, Fig.30As shown, the first inter-frequency power molecular circuit 251F includes a ninth microstrip line L9, a tenth microstrip line L10, a seventh isolation circuit ISO7 and an eighth isolation circuit ISO8. The second inter-frequency power molecular circuit 252F includes an eleventh microstrip line L11, a twelfth microstrip line L12, a ninth isolation circuit ISO9 and a tenth isolation circuit ISO10. Among them: the first end of the ninth microstrip line L9 serves as the first branch end of the first inter-frequency power molecular circuit 251F, the second end of the ninth microstrip line L9 and the second end of the tenth microstrip line L10 are coupled as the combined end of the first inter-frequency power molecular circuit 251F, and the first end of the tenth microstrip line L10 serves as the second branch end of the first inter-frequency power molecular circuit 251F. The first end of the eleventh microstrip line L11 serves as the first branch end of the second inter-frequency power molecular circuit 252F, the second end of the eleventh microstrip line L11 and the second end of the twelfth microstrip line L12 are coupled as the combined end of the second inter-frequency power molecular circuit 252F, and the first end of the twelfth microstrip line L12 serves as the second branch end of the second inter-frequency power molecular circuit 252F. The seventh isolation circuit ISO7 is coupled to the first branch end of the first inter-frequency power molecular circuit 251F. The eighth isolation circuit ISO8 is coupled to the second branch end of the first inter-frequency power molecular circuit 251F. The ninth isolation circuit ISO9 is coupled to the first branch end of the second inter-frequency power molecular circuit 252F. The tenth isolation circuit ISO10 is coupled to the second branch end of the second inter-frequency power molecular circuit 252F. Among them: the seventh isolation circuit ISO7 presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The eighth isolation circuit ISO8 presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal. The ninth isolation circuit ISO9 presents a short-circuit characteristic to the second RF signal and an open-circuit characteristic to the first RF signal. The tenth isolation circuit ISO10 presents a short-circuit characteristic to the first RF signal and an open-circuit characteristic to the second RF signal. In the embodiment of the present application, the function of the first inter-frequency power molecular circuit 251F is to perform inter-frequency combination of the first RF signal output by the first main amplifier circuit 210F and the second RF signal output by the second main amplifier circuit 220F. The passband characteristic of the first branch end of the first inter-frequency power molecular circuit 251F to the first RF signal and the stopband characteristic to the second RF signal can be realized through the seventh isolator ISO7, and the passband characteristic of the second branch end of the first inter-frequency power molecular circuit 251F to the second RF signal and the stopband characteristic to the first RF signal can be realized through the eighth isolator ISO8. Similarly, after the combination end of the first inter-frequency power molecular circuit 251F outputs the first RF signal and / or the second RF signal, the output RF signal will be connected to the first slave amplifier circuit 230F and the second slave amplifier circuit 240F through the microstrip line LL for load pulling to achieve power synthesis.The sixth inter-frequency power division circuit 252F needs to perform inter-frequency power division on the first RF synthesized signal and the second RF synthesized signal obtained by power synthesis, so as to output the first RF synthesized signal and the second RF synthesized signal from the first branch end and the second branch end of the sixth inter-frequency power division circuit 252F respectively. At this time, the ninth isolator ISO9 and the tenth isolator ISO10 are also needed to absorb and filter the RF signals of the frequency band that do not need to be output, so as to improve the effect of the inter-frequency power division.

[0123] For example, Fig.30 As an example, the structure shown in the figure only inputs the first RF signal of the first frequency band, and the equivalent result is similar to the above Fig. 22 The multi-way Doherty architecture of the embodiment of FIG. (a) is described, Fig. 22 The structure of graph (a) is Figure 5 The improved three-way Doherty architecture is shown in FIG. (b). Based on the open circuit characteristics and short circuit characteristics of the seventh isolation circuit ISO7, the eighth isolation circuit ISO8, the ninth isolation circuit ISO9 and the tenth isolation circuit ISO10, Fig. 22 The working principle of Figure (a) can be referred to Figure 5 The working principle of the improved three-way Doherty architecture in FIG. (b) will not be described here. Taking the first frequency band of 1.8 GHz as an example, Fig.31 for Fig.30 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the first frequency band under the architecture. Fig.32 for Fig.30 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.33 for Fig.30 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.31 , Fig.32 and Fig.33 As shown, it can be seen Fig.29 and Fig.30In the embodiment shown, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB respectively, and maintains operation at Figure 5 Figure (b) and Fig. 22 (a) shows the state of the improved three-way Doherty architecture.

[0124] about Fig.30 The structure shown in the figure only inputs the second frequency band, or inputs the first frequency band and the second frequency band at the same time. The relevant principle can refer to the aforementioned Fig.30 The structure shown in the figure inputs the relevant description of the first frequency band, and refers to the aforementioned Fig.12 The description of the open circuit characteristics and short circuit characteristics of the isolator in the embodiment shown will not be repeated here. Taking the second frequency band of 2.2 GHz as an example, Fig.34 for Fig.21 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the second frequency band under the architecture. Fig.35 for Fig.21 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the second frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work after the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.36 for Fig.21 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the second frequency band of the architecture and the input power. In the figure, taking the first slave amplifier circuit 230F as an example, the second slave amplifier circuit 240F is turned on after the first slave amplifier circuit 230F, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.34 , Fig.35 and Fig.36 As shown, it can be seen Fig.29 and Fig.30 In the embodiment shown, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the second frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB respectively, and it maintains working at such a point. Figure 5 Figure (b) and Fig. 22 (b) shows the state of the improved three-way Doherty circuit.

[0125] In this application, for example Fig.29 and Fig.30In the structure of the embodiment shown, dual-frequency shared power synthesis under a multi-channel Doherty architecture can be realized based on a microstrip line structure. And when a microstrip line is used to realize heterodyne power division, the device area can be greatly reduced and the impedance characteristics of the heterodyne power division structure of the bridge structure can be eliminated. The limitation on design matching is also eliminated, and it is easier to improve the design into other power amplification structures, and it is easier to increase and expand other power amplification structures to realize the design of more branches. In addition, Fig.30 As shown, a narrowband isolator can be used for isolation, and the power synthesis process occurs after the isolator. In this case, the problems of large insertion loss and poor linearity caused by the use of broadband isolators can be avoided. At the same time, since the width isolator itself is also difficult to design, the design difficulty can be reduced on the basis of avoiding the use of wide-band isolators.

[0126] In some possible implementations, such as Fig.11 , Fig. 20 and Fig.29 The embodiment shown can also be Fig.12 , Fig.21 and Fig.30 Other structures than those described. For example, Fig.11 , Fig. 20 and Fig.29 The first inter-frequency power division circuit 251F and / or the second inter-frequency power division circuit 252F in the embodiment shown may also be microstrip inter-frequency power division circuits. Fig.37As shown, the microstrip frequency-differential power division circuit includes a twenty-third microstrip line L23, a twenty-fourth microstrip line L24, a twenty-fifth microstrip line L25, a twenty-sixth microstrip line L26, a twenty-seventh microstrip line L27, a twenty-eighth microstrip line L28, and a twenty-ninth microstrip line L29. The electrical length of the twenty-fourth microstrip line L24 and the twenty-fifth microstrip line L25 is one-quarter wavelength of the second radio frequency signal. The electrical length of the twenty-sixth microstrip line L26 and the twenty-seventh microstrip line L27 is one-quarter wavelength of the first radio frequency signal. Wherein: the first end of the twenty-third microstrip line L23 serves as the first branch end of the microstrip frequency-differential power division circuit, and the second end of the twenty-third microstrip line L23 is respectively coupled with the first end of the twenty-fourth microstrip line L24 and the first end of the twenty-fifth microstrip line L25. The first end of the twenty-eighth microstrip line L28 serves as the second branch end of the microstrip frequency-differential power division circuit, and the second end of the twenty-eighth microstrip line L28 is respectively coupled with the first end of the twenty-seventh microstrip line L27 and the first end of the twenty-sixth microstrip line L26. The second end of the twenty-fifth microstrip line L25 and the second end of the twenty-sixth microstrip line L26 are coupled to the first end of the twenty-ninth microstrip line L29, respectively, and the second end of the twenty-ninth microstrip line L29 serves as the combining end of the microstrip frequency-different power splitting circuit. In the embodiment of the present application, because the twenty-fourth microstrip line L24 and the twenty-fifth microstrip line L25 are microstrip lines of a quarter wavelength of the second frequency band, the two make the radio frequency signal of the second frequency band at the node between the twenty-fifth microstrip line L25, the twenty-sixth microstrip line L26 and the twenty-ninth microstrip line L29 present an open circuit to the top of the node, that is, the radio frequency signal of the second frequency band can only flow in the transmission direction between the twenty-sixth microstrip line L26 and the twenty-ninth microstrip line L29. Because the twenty-sixth microstrip line L26 and the twenty-seventh microstrip line L27 are microstrip lines of a quarter wavelength in the first frequency band, the two make the RF signal of the first frequency band at the node between the twenty-fifth microstrip line L25, the twenty-sixth microstrip line L26 and the twenty-ninth microstrip line L29 present an open circuit to the bottom of the node, that is, the RF signal of the first frequency band can only flow in the transmission direction between the twenty-fifth microstrip line L25 and the twenty-ninth microstrip line L29. The above method can equivalently achieve the effect of different-frequency power division. The different-frequency power division circuit realized by microstrip lines can improve the integration and reduce the area cost.

[0127] In some possible implementations, Fig.10 In the embodiment shown, the first inter-frequency power division circuit 250F may use a microstrip line combined with a bridge structure to achieve power synthesis of the first RF signal, power synthesis of the second RF signal, and inter-frequency power division of the two frequency bands. Fig.38As shown, the first inter-frequency power division circuit 250F includes a coupling bridge 257F, a thirteenth microstrip line L13, a fourteenth microstrip line L14, a fifteenth microstrip line L15, a sixteenth microstrip line L16, a seventeenth microstrip line L17, an eighteenth microstrip line L18, an eleventh isolation circuit ISO11, a twelfth isolation circuit ISO12, a thirteenth isolation circuit ISO13 and a fourteenth isolation circuit ISO14. Among them: the first end of the thirteenth microstrip line L13 and the first end of the fifteenth microstrip line L15 are coupled with the output end of the first main amplifier circuit 210F after being coupled with the eleventh isolation circuit ISO11, and the second end of the thirteenth microstrip line L13 is coupled with the output end of the first slave amplifier circuit 230F and the first end of the coupling bridge 257F respectively. The first end of the fourteenth microstrip line L14 and the second end of the fifteenth microstrip line L15 are coupled with the twelfth isolation circuit ISO12 to serve as the second output end of the first inter-frequency power division circuit 250F, and the second end of the fourteenth microstrip line L14 is coupled with the second end of the coupling bridge 257F. The first end of the sixteenth microstrip line L16 is coupled with the output end of the second slave amplifier circuit 240F and the third end of the coupling bridge 257F, respectively. The second end of the sixteenth microstrip line L16 and the first end of the eighteenth microstrip line L18 are coupled with the thirteenth isolation circuit ISO13 to couple with the output end of the second master amplifier circuit 210F. The first end of the seventeenth microstrip line L17 is coupled with the fourth end of the coupling bridge 257F, and the second end of the seventeenth microstrip line L17 and the second end of the eighteenth microstrip line L18 are coupled with the fourteenth isolation circuit ISO14 to serve as the first output end of the first inter-frequency power division circuit 250F. The eleventh isolation circuit ISO11 presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal. The twelfth isolation circuit ISO12 presents a short-circuit characteristic to the first RF signal and an open-circuit characteristic to the second RF signal. The thirteenth isolation circuit ISO13 presents a short-circuit characteristic to the first RF signal and an open-circuit characteristic to the second RF signal. The fourteenth isolation circuit ISO14 presents a short-circuit characteristic to the second RF signal and an open-circuit characteristic to the first RF signal. The first end and the second end of the coupling bridge 257F are coupled ends to each other, and the first end and the fourth end of the coupling bridge 257F are through ends to each other.

[0128] In some examples, such as Fig.39As shown, the coupling bridge 257F includes the nineteenth microstrip line L19, the twentieth microstrip line L20, the twenty-first microstrip line L21 and the twenty-second microstrip line L22. Wherein: the first end of the nineteenth microstrip line L19 is coupled with the first end of the twentieth microstrip line L20 as the first end of the coupling bridge 257F. The second end of the nineteenth microstrip line L19 is coupled with the first end of the twenty-first microstrip line L21 as the second end of the coupling bridge 257F. The second end of the twentieth microstrip line L20 is coupled with the first end of the twenty-second microstrip line L22 as the third end of the coupling bridge 257F. The second end of the twenty-first microstrip line L21 is coupled with the second end of the twenty-second microstrip line L22 as the fourth end of the coupling bridge 257F.

[0129] Fig.38 and Fig.39 In the figure, the coupling bridge 257F is taken as a cross broadside coupler as an example. In other embodiments, the coupling bridge 257F can also be a branch line coupler or a parallel broadside coupler. When the coupling bridge 257F is a branch line coupler or a parallel broadside coupler, the connection direction of the port is not Fig.38 and Fig.39 However, no matter what type of coupler the coupling bridge 257F is, it follows the above Fig.38 The coupling principle described in the embodiment is: the first end and the second end of the coupling bridge 257F are mutually coupled ends, and the first end and the fourth end of the coupling bridge 257F are mutually straight-through ends. In actual applications, whether the connection relationship of the coupling bridge 257F is the connection relationship recorded in this solution is determined according to the port position connection of the coupling end, the straight-through end, etc., rather than determining the connection relationship by the relative connection direction between the ports on the same side of the coupling bridge 257F.

[0130] For example, for example, Fig.39 As an example, the structure shown in the figure only inputs the first RF signal of the first frequency band, and the following equivalent results can be obtained: Fig.40 (a) shows the multi-way Doherty architecture. Fig.40 The structure of (a) is an improved architecture of a three-way Doherty architecture based on a bridge structure. Based on the open-circuit characteristics and short-circuit characteristics of the eleventh isolation circuit ISO11, the twelfth isolation circuit ISO12, the thirteenth isolation circuit ISO13 and the fourteenth isolation circuit ISO14, Fig.40 The combination of the bridge and microstrip line in Figure (a) can achieve load pulling and impedance change. Taking the first frequency band of 1.8GHz as an example, Fig.41 for Fig.39 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the first frequency band under the architecture. Fig.42 for Fig.39Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.43 for Fig.39 Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the first frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work before the second slave amplifier circuit 240F as an example, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.41 , Fig.42 and Fig.43 As shown, it can be seen Fig.38 and Fig.39 In the illustrated embodiment, the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6 dB and 13 dB respectively, and maintains the state of working in the improved three-channel Doherty architecture.

[0131] about Fig.39 The structure shown in the figure only inputs the second frequency band, or inputs the first frequency band and the second frequency band at the same time. The relevant principle can refer to the aforementioned Fig.39 The structure shown in the figure inputs the relevant description of the first frequency band, and refers to the aforementioned Fig.12 The description of the open circuit characteristics and short circuit characteristics of the isolator in the embodiment shown will not be repeated here. Taking the second frequency band of 2.2 GHz as an example, Fig.44 for Fig.39 Schematic diagram of the response relationship between the power backoff amount and working efficiency in the second frequency band under the architecture. Fig.45 for Fig.39 Schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the second frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F starting to work after the second slave amplifier circuit 240F as an example, line ① is the voltage change of the first master amplifier circuit 210F, line ② is the voltage change of the first slave amplifier circuit 230F, line ③ is the voltage change of the second slave amplifier circuit 240F, and line ④ is the voltage change of the first master amplifier circuit 220F. Fig.46 for Fig.39Schematic diagram of the response relationship between the signal phase of each amplifier circuit in the second frequency band and the input power under the architecture. In the figure, taking the first slave amplifier circuit 230F as an example, the operation is started after the second slave amplifier circuit 240F, line ① is the phase change of the first master amplifier circuit 210F, line ② is the phase change of the first slave amplifier circuit 230F, line ③ is the phase change of the second slave amplifier circuit 240F, and line ④ is the phase change of the first master amplifier circuit 220F. Fig.39 When the structure shown in the figure is input only with the second radio frequency signal of the second frequency band, the structure can be equivalently obtained as follows: Fig.40 (b) shows the multi-way Doherty architecture. Fig.40 The structure of (b) is an improved architecture based on the bridge structure to realize the three-way Doherty architecture. Fig.44 , Fig.45 and Fig.46 As shown, it can be seen Fig.38 and Fig.39 In the illustrated embodiment, the sixth multi-channel power amplification architecture 200F has two high efficiency points for the RF signal in the second frequency band when the input RF power is backed off by 6 dB and 13 dB respectively, and it maintains the state of operating in an improved three-channel Doherty circuit.

[0132] In some possible implementations, such as Fig.10 , Fig.11 , Fig. 20 , Fig.21 , Fig.29 , Fig.30 , Fig.38 and Fig.39 In the embodiment, the sixth multi-channel power amplifier architecture 200F is a dual-frequency dual-output architecture.

[0133] In some possible implementations, Fig.10 , Fig.11 , Fig. 20 , Fig.21 , Fig.29 , Fig.30 , Fig.38 and Fig.39 Based on the embodiment of the present invention, the sixth multi-channel power amplification architecture 200F can also be set as a dual-frequency single-output architecture.

[0134] In some examples, the first RF composite signal and the second RF composite signal may be received by a common inter-frequency power splitter and combined into one output RF signal.

[0135] In some examples, a microstrip frequency-differential power splitter circuit can be designed based on a microstrip line to receive the first RF composite signal and the second RF composite signal, and combine them into an output RF signal. Fig.47As shown, the sixth multi-channel power amplification architecture 200F also includes a second inter-frequency power division circuit 260F; the second inter-frequency power division circuit 260F includes a plurality of microstrip lines. The first output end of the first inter-frequency power division circuit 250F is coupled to the first branch end of the second inter-frequency power division circuit 260F, and the first output end of the first inter-frequency power division circuit 250F is coupled to the second branch end of the second inter-frequency power division circuit 260F. The combining end of the second inter-frequency power division circuit 260F is used to output any one of the following signals: a first RF synthesized signal, a second RF synthesized signal, and a synthesized signal of the first RF synthesized signal and the second RF synthesized signal. In an embodiment of the present application, the first RF synthesized signal and the second RF synthesized signal can be input into the second inter-frequency power division circuit 260F based on the first branch end and the second branch end of the second inter-frequency power division circuit 260F, and output as one channel through the combining end of the second inter-frequency power division circuit 260F.

[0136] Exemplarily, the second inter-frequency power division circuit 260F can be a traditional inter-frequency power divider. Exemplarily, the second inter-frequency power division circuit 260F can also be a microstrip line equivalent structure recorded in the above-mentioned first inter-frequency power molecular circuit 251F and the second inter-frequency power molecular circuit 252F. The effect of inter-frequency power division can be equivalently achieved in the above manner. The inter-frequency power division circuit implemented by microstrip line can improve the integration and reduce the area cost.

[0137] In some possible implementations, at least one of the first main amplifier circuit 210F, the second main amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F is a power synthesis circuit; the power synthesis circuit includes a plurality of amplification branch circuits. Exemplarily, the power synthesis circuit includes at least one of the following: a doherty circuit, an inverse doherty circuit, an asymmetric doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage-type synthesis circuit, a chireix amplifier circuit, and an out-of-phase modulation amplifier circuit. In an embodiment of the present application, when a power synthesis architecture is implemented based on a microstrip line equivalent out-of-frequency power division circuit, the design difficulty of a power amplifier with high back-off, high efficiency, and large power bandwidth can be reduced. At this time, the sixth multi-channel power amplifier architecture 200B of the above embodiment can be expanded to a larger power back-off amount. For example, at least one of the first main amplifier circuit 210F, the second main amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F can be designed as a power synthesis circuit including multiple amplifier branch circuits, so as to obtain a larger back-off power and more saturation power points on the basis of the three-channel Doherty architecture.

[0138] In some examples, more power amplification branches may be added to the first output terminal and / or the second output terminal of the first inter-frequency power division circuit 250F to perform power synthesis on the first RF synthesis signal and / or the second RF synthesis signal output by the sixth multi-channel power amplification architecture 200B and the RF signals output by other added power amplification branches. In the embodiment of the present application, because the use of microstrip lines reduces the difficulty of designing a power amplifier with high back-off, high efficiency and large power bandwidth, more power synthesis architectures may be added to the post-stage design of the output terminal of the first inter-frequency power division circuit 250F.

[0139] In some possible implementations, such as Fig.48 As shown, the sixth multi-channel power amplification architecture 200F also includes a shunt circuit 280F and a first coupler 270F. The shunt circuit 280F is used to: input the first RF signal and the second RF signal, and output the first RF signal to the input end of the first main amplifier circuit 210F and the first end of the first coupler 270F respectively, and output the second RF signal to the input end of the second main amplifier circuit 210F and the third end of the first coupler 270F respectively. The second end of the first coupler 270F and the fourth end of the first coupler 270F are used to: output the RF combined frequency signal to the input end of the first slave amplifier circuit 230F and the input end of the second slave amplifier circuit 240F respectively.

[0140] In some examples, such as Fig.49 As shown, the branch circuit 280F includes a first power divider 281F and a second power divider 282F. The combined end of the first power divider 281F is used to input a first radio frequency signal. The first branch end and the second branch end of the first power divider 281F are respectively used to output a first radio frequency signal. The combined end of the second power divider 282F is used to input a second radio frequency signal. The first branch end and the second branch end of the second power divider 282F are respectively used to output a second radio frequency signal.

[0141] In some examples, such as Fig.50As shown, the branch circuit 280F includes a first inter-frequency power divider 283F and a second inter-frequency power divider 284F; the first inter-frequency power divider 283F and / or the second inter-frequency power divider 284F include multiple microstrip lines. The combining end of the first inter-frequency power divider 283F is used to input a first radio frequency signal and a second radio frequency signal. The first branch end of the first inter-frequency power divider 283F outputs a first radio frequency signal. The second branch end of the first inter-frequency power divider 283F is used to output a second radio frequency signal. The combining end of the first inter-frequency power divider 283F is used to input a first radio frequency signal and a second radio frequency signal. The first branch end of the second inter-frequency power divider 284F outputs a first radio frequency signal. The second branch end of the second inter-frequency power divider 284F is used to output a second radio frequency signal. In an embodiment of the present application, the first inter-frequency power divider 283F and the second inter-frequency power divider 284F may also adopt an equivalent structure based on microstrip lines to reduce area overhead and improve device integration. For example, it may be adopted Fig.50 The structure of the microstrip line based frequency-differential power division circuit is shown.

[0142] In some examples, such as Fig.51 As shown, the shunt circuit 280F includes a third inter-frequency power divider 285F, a third power divider 286F and a fourth power divider 287F. The first shunt end and the second shunt end of the third inter-frequency power divider 285F are respectively coupled with the combining end of the third power divider 286F and the combining end of the fourth power divider 287F. The third inter-frequency power divider 285F includes a plurality of microstrip lines. Among them: the combining end of the third inter-frequency power divider 285F is used to input the first radio frequency signal and the second radio frequency signal. The first shunt end of the third inter-frequency power divider 285F is used to output the first radio frequency signal. The second shunt end of the third inter-frequency power divider 285F is used to output the second radio frequency signal. The first shunt end and the second shunt end of the third power divider 286F are respectively used to output a first radio frequency signal. The first shunt end and the second shunt end of the fourth power divider 287F are respectively used to output a second radio frequency signal. In the embodiment of the present application, the third frequency-different power divider 285F may also adopt an equivalent structure based on a microstrip line to reduce area overhead and improve device integration. For example, Fig.50 The structure of the microstrip line based frequency-differential power division circuit is shown.

[0143] In some possible implementations, the first RF signal and / or the second RF signal include at least one RF signal of a sub-band. In an embodiment of the present application, a RF signal with a relatively large bandwidth can be split into a plurality of first RF signals and second RF signals with relatively small bandwidths. The convergence of impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the back-off efficiency and full-load efficiency of the multi-channel power amplification architecture. In addition, splitting the traditional wideband main amplifier circuit into a plurality of RF signals with relatively small bandwidths can avoid the problem of difficult VBW design in concurrent scenarios and will not cause deterioration of concurrent performance.

[0144] Exemplarily, the first RF signal may be located at 1.8 GHz, and the second RF signal may be located at 2.1 GHz or 2.2 GHz or 2.6 GHz, etc. Exemplarily, the first RF signal may be located at the low three-band (e.g., 700 MHz, 800 MHz, and 900 MHz), and the second RF signal may be located at the middle three-band (e.g., 1.8 GHz, 2.2 GHz, and 2.6 GHz). Alternatively, the first RF signal and / or the second RF signal may also be located at other frequency bands. Exemplarily, the first RF signal may include the first of the low three-band, and the second RF signal may include the other two of the low three-band. Alternatively, the first RF signal may include two of the low three-band, and the second RF signal may include the remaining one of the third band. Exemplarily, the first RF signal may be located at the dual-band of 1.8 GHz and 2.2 GHz in the middle three-band, and the second RF signal may be located at the single-band of 2.6 GHz in the middle three-band. In the embodiment of the present application, by dividing one main path into two designs with relatively smaller bandwidths, for example, the relative bandwidth of the middle three-frequency is 40%, the middle three-frequency is divided into dual-frequency of 1.8GHz and 2.2GHz (relative bandwidth 18%) and single-frequency of 2.6GHz (relative bandwidth 3%). The convergence of the impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the fallback efficiency and full load efficiency of the sixth multi-channel power amplification architecture 200F.

[0145] In some possible implementations, the minimum operating power point of the first master amplifier circuit 210F is less than the minimum operating power point of the first slave amplifier circuit 230F and the minimum operating power point of the second slave amplifier circuit 240F. The minimum operating power point of the second master amplifier circuit 210F is less than the minimum operating power point of the first slave amplifier circuit 230F and the minimum operating power point of the second slave amplifier circuit 240F. The minimum operating power point of the first slave amplifier circuit 230F is less than, equal to, or greater than the minimum operating power point of the second slave amplifier circuit 240F. In an embodiment of the present application, the first master amplifier circuit 210F and the second master amplifier circuit 220F can operate in Class AB, and as the power of the input RF signal increases, the two master amplifier circuits will start working before the slave amplifier circuit. Therefore, the minimum operating power points of the two master amplifier circuits are both less than the minimum operating power point of the first slave amplifier circuit 230F and the minimum operating power point of the second slave amplifier circuit 240F. In actual applications, the first slave amplifier circuit 230F may be started up at the same time as the second slave amplifier circuit 240F, or may be started up before the second slave amplifier circuit 240F, or may be started up later than the second slave amplifier circuit 240F.

[0146] In some possible implementations, the sixth multi-channel power amplifier architecture 200F further includes a driving circuit or a control circuit, and the minimum operating power points of the first main amplifier circuit 210F, the second main amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F are controlled based on the driving circuit or the control circuit. In the embodiment of the present application, since the first slave amplifier circuit 230F and the second slave amplifier circuit 240F under the same architecture may also have a reversed start-up sequence (for example, under one architecture, for a radio frequency signal of a first frequency band, the first slave amplifier circuit 230F may start working before the second slave amplifier circuit 240F, but for a radio frequency signal of a second frequency band, the second slave amplifier circuit 240F may start working before the first slave amplifier circuit 230F), the minimum operating power points of the first main amplifier circuit 210F, the second main amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F may be controlled by a driving circuit or a control circuit in the digital domain to achieve control of the start-up sequence.

[0147] In some possible implementations, at least one of the multiple microstrip lines is a microstrip line with a three-dimensional stacked structure. Exemplarily, the microstrip line may be a suspended microstrip line. In the embodiment of the present application, the performance of the microstrip line with a three-dimensional stacked structure is consistent with that of an ordinary microstrip line, but its area is much smaller than that of an ordinary microstrip line. The microstrip line with a three-dimensional stacked structure can reduce the area overhead of more multi-channel power amplifier architectures.

[0148] The embodiments of the present application provide a multi-channel power amplifier architecture, a radio frequency generation device, and a communication system. First, the multi-channel power amplifier architecture realizes load pulling and frequency power division based on microstrip lines, thereby improving the freedom of architecture design while reducing the design difficulties caused by the impedance characteristics of the bridge. Second, the microstrip line reduces the device area overhead and improves the device integration. Third, in the case of load pulling and frequency power division based on the microstrip line structure, the design requirements for the isolation circuit required for the frequency power division function are reduced, and a narrowband isolator can be used as an isolation circuit, avoiding the insertion loss and design difficulties caused by the broadband isolator. Fourth, in the case of load pulling and frequency power division based on the microstrip line structure, it is easier to carry out architecture expansion design, thereby obtaining a larger power back-off amount, etc. Fifth, this solution can realize different input and output forms such as single-frequency single output under dual-frequency input, dual-frequency dual output, and dual-frequency single output. Sixth, in the case of dual-frequency sharing, the frequency band of the main road can be narrow-band designed, so as to optimize the performance of the narrow-band power amplifier, and eliminate the influence of multi-frequency concurrent characteristics on the power amplifier performance. Seventh, this solution can be equivalent to a traditional three-way Doherty architecture or an improved three-way Doherty architecture, which can be selected according to actual application requirements, and can also be further expanded into a Doherty architecture with more paths. Eighth, as the number of branches of the Doherty architecture increases, the number of impedance transformation lines and impedance inversion lines will also increase. At this time, the solution of the microstrip line equivalent structure recorded in this embodiment can reduce a larger area overhead ratio.

[0149] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0150] Those of ordinary skill in the art will appreciate that the modules and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0151] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and modules described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0152] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0153] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical modules, that is, they may be located in one device or distributed on multiple devices. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0154] In addition, each functional module in each embodiment of the present application may be integrated into one device, or each module may exist physically separately, or two or more modules may be integrated into one device.

[0155] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using a software program, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loading and executing a computer program instruction on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (Digital Subscriber Line, DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or may contain one or more servers, data centers and other data storage devices that can be integrated with a medium. The available medium may be a magnetic medium (eg, a floppy disk, a hard disk, a magnetic tape), an optical medium (eg, a DVD), or a semiconductor medium (eg, a solid state disk (SSD)).

[0156] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A multi-channel power amplifier architecture, characterized in that: The invention comprises a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, a second slave amplifier circuit and a first inter-frequency power division circuit; the first inter-frequency power division circuit comprises at least one microstrip line; the output end of the first main amplifier circuit, the output end of the second main amplifier circuit, the output end of the first slave amplifier circuit and the output end of the second slave amplifier circuit are respectively coupled to the first inter-frequency power division circuit; wherein: The output end of the first main amplifier circuit is used to output a first radio frequency signal; the output end of the second main amplifier circuit is used to output a second radio frequency signal; the first radio frequency signal and the second radio frequency signal have different frequencies; the output end of the first slave amplifier circuit and the output end of the second slave amplifier circuit are used to output a radio frequency combined frequency signal, and the radio frequency combined frequency signal includes the first radio frequency signal and / or the second radio frequency signal; The first output end of the first hetero-frequency power division circuit is used to assist in realizing power synthesis of the first radio frequency signal; the second output end of the first hetero-frequency power division circuit is used to assist in realizing power synthesis of the second radio frequency signal.

2. The multi-channel power amplifier architecture according to claim 1, characterized in that: The first hetero-frequency power division circuit includes a first hetero-frequency power molecular circuit, a second hetero-frequency power molecular circuit and a connecting microstrip line; the first hetero-frequency power molecular circuit is coupled to the second hetero-frequency power molecular circuit through the connecting microstrip line.

3. The multi-channel power amplifier architecture according to claim 2, characterized in that: The first end of the connecting microstrip line is coupled to the combining end of the first hetero-frequency power molecular circuit, and the second end of the connecting microstrip line is coupled to the combining end of the second hetero-frequency power molecular circuit; The output end of the first slave amplifier circuit is coupled to the combining end of the first hetero-frequency power molecular circuit; The output end of the first main amplifier circuit is coupled to the first branch end of the first inter-frequency power molecular circuit, and the second branch end of the first inter-frequency power molecular circuit is the second output end of the first inter-frequency power division circuit; The output end of the second slave amplifier circuit is coupled to the combining end of the second hetero-frequency power molecular circuit; The output end of the second main amplifier circuit is coupled to the first branch end of the second hetero-frequency power molecular circuit, and the second branch end of the second hetero-frequency power molecular circuit is the first output end of the first hetero-frequency power division circuit.

4. The multi-channel power amplifier architecture according to claim 3, characterized in that: The first inter-frequency power molecular circuit includes a first microstrip line, a second microstrip line, a first isolation circuit and a second isolation circuit; the second inter-frequency power molecular circuit includes a third microstrip line, a fourth microstrip line, a third isolation circuit and a fourth isolation circuit; The first end of the first microstrip line and the first end of the second microstrip line are coupled to serve as a combined end of the first inter-frequency power molecular circuit; the second end of the first microstrip line serves as a first branch end of the first inter-frequency power molecular circuit; the second end of the second microstrip line serves as a second branch end of the first inter-frequency power molecular circuit; The first end of the third microstrip line and the first end of the fourth microstrip line are coupled to serve as a combined end of the second inter-frequency power molecular circuit; the second end of the third microstrip line serves as a first branch end of the second inter-frequency power molecular circuit; the second end of the fourth microstrip line serves as a second branch end of the second inter-frequency power molecular circuit; The first isolation circuit is coupled to the first branch end of the first inter-frequency power molecular circuit; the second isolation circuit is coupled to the second branch end of the first inter-frequency power molecular circuit; the third isolation circuit is coupled to the first branch end of the second inter-frequency power molecular circuit; the fourth isolation circuit is coupled to the second branch end of the second inter-frequency power molecular circuit; wherein: The first isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The second isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The third isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The fourth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal.

5. The multi-channel power amplifier architecture according to claim 2, characterized in that: The first end of the connecting microstrip line is coupled to the combining end of the first hetero-frequency power molecular circuit, and the second end of the connecting microstrip line is coupled to the combining end of the second hetero-frequency power molecular circuit; The output end of the first slave amplifier circuit is coupled to the combining end of the first different-frequency power molecular circuit; The output end of the first main amplifier circuit is coupled with the first branch end of the first inter-frequency power dividing circuit to serve as the first output end of the first inter-frequency power dividing circuit; The output end of the second slave amplifier circuit is coupled to the combining end of the second hetero-frequency power molecular circuit; The output end of the second main amplifier circuit is coupled to the first branch end of the second different-frequency power division circuit to serve as the second output end of the first different-frequency power division circuit.

6. The multi-channel power amplifier architecture according to claim 5, characterized in that: The first different-frequency power division circuit includes a fifth microstrip line, a sixth microstrip line L6 and a fifth isolation circuit; the second different-frequency power division circuit includes a seventh microstrip line L7, an eighth microstrip line L8 and a sixth isolation circuit; The first end of the fifth microstrip line serves as a combining end of the first inter-frequency power molecular circuit, and the second end of the fifth microstrip line serves as a first branching end of the first inter-frequency power molecular circuit; the output end of the first main amplifier circuit is coupled to the second end of the fifth microstrip line through the sixth microstrip line; The first end of the seventh microstrip line serves as a combining end of the second inter-frequency power molecular circuit, and the second end of the seventh microstrip line serves as a first branching end of the second inter-frequency power molecular circuit; the output end of the second main amplifier circuit is coupled to the second end of the seventh microstrip line through the eighth microstrip line; The fifth isolation circuit is coupled to the first branch end of the first inter-frequency power molecular circuit; the sixth isolation circuit is coupled to the first branch end of the second inter-frequency power molecular circuit; wherein: The fifth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The sixth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal.

7. The multi-channel power amplifier architecture according to claim 2, characterized in that: The first branch end of the first inter-frequency power molecular circuit is coupled to the output end of the first main amplifier circuit, the second branch end of the first inter-frequency power molecular circuit is coupled to the output end of the second main amplifier circuit, and the combining end of the first inter-frequency power molecular circuit and the output end of the first slave amplifier circuit are respectively coupled to the first end of the connecting microstrip line; The combining end of the second hetero-frequency power molecular circuit and the output end of the second slave amplifier circuit are respectively coupled to the second end of the connecting microstrip line, the first branch end of the second hetero-frequency power molecular circuit serves as the first output end of the first hetero-frequency power division circuit, and the second branch end of the second hetero-frequency power molecular circuit serves as the second output end of the first hetero-frequency power division circuit.

8. The multi-channel power amplifier architecture according to claim 7, characterized in that: The first different-frequency power division circuit includes a ninth microstrip line, a tenth microstrip line, a seventh isolation circuit and an eighth isolation circuit; the second different-frequency power division circuit includes an eleventh microstrip line, a twelfth microstrip line, a ninth isolation circuit and a tenth isolation circuit; The first end of the ninth microstrip line serves as the first branch end of the first inter-frequency power molecular circuit, the second end of the ninth microstrip line and the second end of the tenth microstrip line are coupled as the combining end of the first inter-frequency power molecular circuit, and the first end of the tenth microstrip line serves as the second branch end of the first inter-frequency power molecular circuit; the first end of the eleventh microstrip line serves as the first branch end of the second inter-frequency power molecular circuit, the second end of the eleventh microstrip line and the second end of the twelfth microstrip line are coupled as the combining end of the second inter-frequency power molecular circuit, and the first end of the twelfth microstrip line serves as the second branch end of the second inter-frequency power molecular circuit; The seventh isolation circuit is coupled to the first branch end of the first inter-frequency power molecular circuit; the eighth isolation circuit is coupled to the second branch end of the first inter-frequency power molecular circuit; the ninth isolation circuit is coupled to the first branch end of the second inter-frequency power molecular circuit; the tenth isolation circuit is coupled to the second branch end of the second inter-frequency power molecular circuit; wherein: The seventh isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The eighth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The ninth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The tenth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal.

9. The multi-channel power amplifier architecture according to claim 3, 5 or 7, characterized in that: The first inter-frequency power molecular circuit and / or the second inter-frequency power molecular circuit are microstrip inter-frequency power division circuits; the microstrip inter-frequency power division circuits include a twenty-third microstrip line, a twenty-fourth microstrip line, a twenty-fifth microstrip line, a twenty-sixth microstrip line, a twenty-seventh microstrip line, a twenty-eighth microstrip line and a twenty-ninth microstrip line; the electrical length of the twenty-fourth microstrip line and the twenty-fifth microstrip line is one-quarter of the wavelength of the second radio frequency signal; The electrical lengths of the twenty-sixth microstrip line and the twenty-seventh microstrip line are one quarter of the wavelength of the first radio frequency signal; wherein: The first end of the twenty-third microstrip line serves as the first branch end of the microstrip frequency-differential power division circuit, and the second end of the twenty-third microstrip line is coupled with the first end of the twenty-fourth microstrip line and the first end of the twenty-fifth microstrip line respectively; The first end of the twenty-eighth microstrip line serves as the second branch end of the microstrip frequency-differential power division circuit, and the second end of the twenty-eighth microstrip line is coupled to the first end of the twenty-seventh microstrip line and the first end of the twenty-sixth microstrip line respectively; The second end of the twenty-fifth microstrip line and the second end of the twenty-sixth microstrip line are respectively coupled to the first end of the twenty-ninth microstrip line, and the second end of the twenty-ninth microstrip line serves as a combining end of the microstrip different-frequency power division circuit.

10. The multi-channel power amplifier architecture according to claim 1, characterized in that: The first different-frequency power division circuit includes a coupling bridge, a thirteenth microstrip line, a fourteenth microstrip line, a fifteenth microstrip line, a sixteenth microstrip line, a seventeenth microstrip line, an eighteenth microstrip line, an eleventh isolation circuit, a twelfth isolation circuit, a thirteenth isolation circuit and a fourteenth isolation circuit; wherein: The first end of the thirteenth microstrip line and the first end of the fifteenth microstrip line are coupled to the output end of the first main amplifier circuit after being coupled to the eleventh isolation circuit, and the second end of the thirteenth microstrip line is coupled to the output end of the first slave amplifier circuit and the first end of the coupling bridge respectively; the first end of the fourteenth microstrip line and the second end of the fifteenth microstrip line are coupled to the twelfth isolation circuit as the second output end of the first different-frequency power division circuit, and the second end of the fourteenth microstrip line is coupled to the second end of the coupling bridge; The first end of the sixteenth microstrip line is coupled to the output end of the second slave amplifier circuit and the third end of the coupling bridge respectively, the second end of the sixteenth microstrip line and the first end of the eighteenth microstrip line are coupled to the output end of the second master amplifier circuit after being coupled to the thirteenth isolation circuit; the first end of the seventeenth microstrip line is coupled to the fourth end of the coupling bridge, the second end of the seventeenth microstrip line and the second end of the eighteenth microstrip line are coupled to the fourteenth isolation circuit and serve as the first output end of the first different-frequency power division circuit; The eleventh isolation circuit presents a short-circuit characteristic to the second radio frequency signal and presents an open-circuit characteristic to the first radio frequency signal; The twelfth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The thirteenth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The fourteenth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The first end and the second end of the coupling bridge are coupled ends to each other, and the first end and the fourth end of the coupling bridge are through ends to each other.

11. The multi-channel power amplifier architecture according to claim 10, characterized in that: The coupling bridge comprises a nineteenth microstrip line, a twentieth microstrip line, a twenty-first microstrip line and a twenty-second microstrip line; wherein: The first end of the nineteenth microstrip line is coupled with the first end of the twentieth microstrip line to serve as the first end of the coupling bridge; The second end of the nineteenth microstrip line is coupled with the first end of the twenty-first microstrip line to serve as the second end of the coupling bridge; The second end of the 20th microstrip line is coupled with the first end of the 22nd microstrip line to serve as the third end of the coupling bridge; The second end of the twenty-first microstrip line and the second end of the twenty-second microstrip line are coupled to serve as the fourth end of the coupling bridge.

12. The multi-channel power amplifier architecture according to any one of claims 1 to 11, characterized in that: The multi-channel power amplification architecture also includes a second hetero-frequency power division circuit; the first output end of the first hetero-frequency power division circuit is coupled with the first branch end of the second hetero-frequency power division circuit, and the first output end of the first hetero-frequency power division circuit is coupled with the second branch end of the second hetero-frequency power division circuit; the combining end of the second hetero-frequency power division circuit is used to output at least one of the following signals: a power synthesis signal of the first RF signal, a power synthesis signal of the second RF signal; the second hetero-frequency power division circuit is a hetero-frequency power division circuit based on a microstrip line.

13. The multi-channel power amplifier architecture according to any one of claims 1 to 12, characterized in that: At least one of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit is a power synthesis circuit; the power synthesis circuit includes a plurality of amplification branch circuits.

14. The multi-channel power amplifier architecture according to claim 13, characterized in that: The power synthesis circuit includes at least one of the following: a doherty circuit, an inverse doherty circuit, an asymmetric doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage type synthesis circuit, a chireix amplifier circuit and an out-of-phase modulation amplifier circuit.

15. The multi-channel power amplifier architecture according to any one of claims 1 to 14, characterized in that: The multi-channel power amplification architecture further includes a shunt circuit and a first coupler; The shunt circuit is used to: input the first radio frequency signal and the second radio frequency signal, and output the first radio frequency signal to the input end of the first main amplifier circuit and the first end of the first coupler respectively, and output the second radio frequency signal to the input end of the second main amplifier circuit and the third end of the first coupler respectively; The second end of the first coupler and the fourth end of the first coupler are used to output the radio frequency combined frequency signal to the input end of the first slave amplifier circuit and the input end of the second slave amplifier circuit respectively.

16. The multi-channel power amplifier architecture according to claim 15, characterized in that: The branching circuit includes a first inter-frequency power divider and a second inter-frequency power divider; the first inter-frequency power divider and / or the second inter-frequency power divider are inter-frequency power divider circuits based on microstrip lines; The combining end of the first inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal; the first branching end of the first inter-frequency power divider outputs one channel of the first radio frequency signal; The second branch end of the first inter-frequency power divider is used to output one channel of the second radio frequency signal; The summing end of the first inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal; The first branch end of the second inter-frequency power divider outputs one channel of the first radio frequency signal; The second branch end of the second different-frequency power divider is used to output one channel of the second radio frequency signal.

17. The multi-channel power amplifier architecture according to claim 15, characterized in that: The branching circuit includes a third different-frequency power divider, a third power divider and a fourth power divider; the first branching end and the second branching end of the third different-frequency power divider are respectively coupled with the combining end of the third power divider and the combining end of the fourth power divider; The third inter-frequency power divider is an inter-frequency power divider circuit based on a microstrip line; wherein: The combining end of the third inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal; the first branching end of the third inter-frequency power divider is used to output the first radio frequency signal; and the second branching end of the third inter-frequency power divider is used to output the second radio frequency signal; The first branch end and the second branch end of the third power divider are respectively used to output one channel of the first radio frequency signal; The first branch end and the second branch end of the fourth power divider are respectively used to output one channel of the second radio frequency signal.

18. The multi-channel power amplifier architecture according to any one of claims 1 to 17, characterized in that: The first radio frequency signal and / or the second radio frequency signal includes a radio frequency signal of at least one sub-frequency band.

19. The multi-channel power amplifier architecture according to any one of claims 1 to 18, characterized in that: The minimum operating power point of the first master amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the second master amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the first slave amplifier circuit is less than, equal to or greater than the minimum operating power point of the second slave amplifier circuit.

20. The multi-channel power amplifier architecture according to claim 19, characterized in that: The multi-channel power amplifier architecture also includes a driving circuit or a control circuit, based on which the minimum operating power points of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit are controlled.

21. The multi-channel power amplifier architecture according to any one of claims 1 to 20, characterized in that: At least one microstrip line among the plurality of microstrip lines is a microstrip line with a three-dimensional stacked structure.

22. A radio frequency generating device, characterized in that: It comprises a radio frequency generation circuit and a multi-channel power amplification architecture as described in any one of claims 1-21; the radio frequency generation circuit is used to output a radio frequency signal to the multi-channel power amplification architecture; and the power amplifier is used to perform power synthesis amplification according to the radio frequency signal.

23. A communication system, characterized in that: It comprises a baseband processing device and a radio frequency generating device as described in claim 22; the baseband processing device is used to output a baseband signal to the radio frequency generating device; the radio frequency generating device is used to obtain a radio frequency signal according to the baseband signal and perform power synthesis amplification on the radio frequency signal.

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