Power amplification circuit, radio frequency generation equipment and communication system

Abstract

The embodiment of the invention provides a power amplification circuit, radio frequency generation equipment and a communication system, which are applied to the technical field of wireless communication. The power amplification circuit comprises a first main amplification circuit, a second main amplification circuit, a first slave amplification circuit, a second slave amplification circuit, a first coupler, a second coupler, a first combiner and a second combiner. Wherein the pilot frequency power division characteristic is realized after a signal passes through the first coupler and the second coupler. The bandwidths of the first main amplification circuit and the second main amplification circuit are smaller than the bandwidths of the first slave amplification circuit and the second slave amplification circuit. And by narrowing the main amplification circuit, the design difficulty is reduced. Through the design of the combiner, the impedance of the two main amplification circuits is constant, so that the main amplification circuits are designed to be relatively independent, and the main amplification circuits can be easily replaced with other efficient frameworks to realize larger rollback amount. According to the embodiment of the invention, large-bandwidth, large-backoff-amount and high-efficiency power amplifier design can be carried out more easily.

Description

Technical Field

[0001] The present application relates to the field of wireless communication technology, and in particular to a power amplifier circuit, a radio frequency generation device and a communication system. Background Art

[0002] In the application of wireless communication technology, data information is carried on the radio frequency signal through modulation technology, and the radio frequency signal is transmitted to achieve wireless communication between the transmitting side and the receiving side. In order to ensure the communication quality of wireless communication, the radio frequency signal is usually required to be power amplified before it is transmitted. However, with the development of wireless communication technology, the modulation technology of radio frequency signals has gradually become more complicated, making the signal peak-to-average ratio of the output radio frequency signal larger. At this time, in order to improve the working efficiency of the output radio frequency signal, it is necessary to make the power amplifier have a certain power back-off amount.

[0003] As communication systems develop in the direction of high speed and low latency, the bandwidth of communication signals continues to increase. Because of the fragmented nature of communication signal frequency bands, power amplifiers usually need to be designed to be compatible and concurrent with multiple different frequency bands. As far as broadband multi-frequency power amplifiers are concerned, VBW is an important factor affecting broadband concurrency, and the control of VBW of broadband power amplifiers is also extremely challenging in design. In addition, in the design of power amplifiers, improving back-off efficiency and expanding working bandwidth are conflicting requirements, and both have certain design difficulties. Therefore, how to design a power amplifier with a large back-off amount, high efficiency, and high-power broadband is a difficult problem. Summary of the invention

[0004] The embodiments of the present application provide a power amplifier circuit, a radio frequency generation device and a communication system, which realize a power amplifier design with high back-off, high efficiency and high power and broadband.

[0005] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0006] In the first aspect, a power amplifier circuit is provided, which includes a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, a second slave amplifier circuit, a first coupler, a second coupler, a first combiner, and a second combiner. In the first coupler and the second coupler: an isolation path is formed between the first end and the second end, a straight-through path is formed between the first end and the fourth end, and there is a 90° phase difference between the radio frequency signals output by the third end and the fourth end. The bandwidth of the first main amplifier circuit and the second main amplifier circuit is smaller than the bandwidth of the first slave amplifier circuit and the second slave amplifier circuit. Wherein: the third end of the first coupler is coupled to the second end of the second coupler through the first slave amplifier circuit; the fourth end of the first coupler is coupled to the first end of the second coupler through the second slave amplifier circuit. The output end of the first main amplifier circuit is coupled to the first end of the first combiner; the third end of the second coupler is coupled to the second end of the first combiner; the output end of the second main amplifier circuit is coupled to the first end of the second combiner; the fourth end of the second coupler is coupled to the second end of the second combiner. The first end of the first coupler and the input end of the first main amplifier circuit are used to input the first radio frequency signal; the second end of the first coupler and the input end of the second main amplifier circuit are used to input the second radio frequency signal; the first radio frequency signal and the second radio frequency signal have different frequency bands; the third ends of the first combiner and the second combiner are used to output radio frequency synthesized signals.

[0007] In some examples, the coupler can be a cross-broadside coupler, a branch line coupler, or a parallel broadside coupler, etc. Taking the branch line coupler as an example, the third end and the fourth end of the coupler output RF signals with a phase shift of 180° and a phase shift of 90°, respectively. Taking the cross-broadside coupler as an example, the third end and the fourth end of the coupler output RF signals with a phase shift of 90° and no phase shift, respectively. These couplers can all satisfy that the third end and the fourth end have a phase difference of 90°. In actual applications, whether the connection relationship of the coupler is the connection relationship recorded in this solution is determined based on the port position connection of the coupling end, the straight-through end, etc., rather than determining the connection relationship by the relative connection direction between the ports on the same side of the coupler.

[0008] In the embodiment of the present application, first, by setting the bandwidth of the first main amplifier circuit and the second main amplifier circuit to be smaller than the bandwidth of the first slave amplifier circuit and the second slave amplifier circuit. By narrow-banding the bandwidth design of the two main paths, the two main paths can be decomposed into two narrow-bandwidth power amplifier units. In the case of reducing the bandwidth of the hardware design, the narrowband impedance convergence is more friendly, which is conducive to improving the extreme performance and can solve the problem of deterioration of power, efficiency and linear performance in concurrent scenarios. Second, the first coupler and the second coupler control the signal phase to produce in-phase synthesis and reverse cancellation, thereby realizing the hetero-frequency power division characteristics. Compared with the scheme of using hetero-frequency power dividers to divide the RF signals between different frequency bands, it can have better out-of-band isolation and smaller insertion loss, improve the efficiency of the design scheme, and improve the linear performance of the link. Third, the RF signals of different frequency bands are divided into two RF signals of the first RF signal and the second RF signal, and the dual output architecture of the two-way output of the second coupler can avoid the problems of large insertion loss and poor linearity caused by the use of broadband isolators. At the same time, because the width isolator itself also has design difficulties, on the basis of avoiding the use of width isolators, the design difficulty can also be reduced. Fourth, the power sharing structure composed of the master path and the slave path can increase the back-off amount of the power amplifier and improve the efficiency, so as to achieve the energy-saving characteristics of the power amplifier while reducing the cost of the solution. The embodiment of the present application can more easily realize the design of a power amplifier with large back-off amount, large bandwidth and high working efficiency through the above method.

[0009] In one possible implementation, the first combiner and the second combiner are circulators; in the circulator, the RF signal is transmitted in the direction of flow through the first end, the second end, and the third end of the circulator, and will not be transmitted in the reverse direction; the third end of the first combiner is used to output a first RF synthetic signal; the third end of the second combiner is used to output a second RF synthetic signal; the first RF synthetic signal is a synthetic signal of the first RF signal; the second RF synthetic signal is a synthetic signal of the second RF signal. In an embodiment of the present application, the impedance of the circulator is not constant, and can be designed accordingly according to actual design requirements. Using a circulator as the first combiner and the second combiner can keep the main amplifier circuit relatively independent, which is convenient for design. And it is easier to carry out structural expansion design for multiple amplification branches.

[0010] In one possible implementation, when a circulator is used as the first combiner and the second combiner, the minimum on-operating power point of the first master amplifier circuit is less than the minimum on-operating power point of the first slave amplifier circuit; the minimum on-operating power point of the second master amplifier circuit is less than the minimum on-operating power point of the first slave amplifier circuit; the minimum on-operating power point of the first slave amplifier circuit is less than, equal to or greater than the minimum on-operating power point of the second slave amplifier circuit.

[0011] Exemplarily, when the minimum turn-on operating power point of the first slave amplifier circuit is equal to the minimum turn-on operating power point of the second slave amplifier circuit, the first master amplifier circuit, the second master amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit can form an architecture of heterodyne power division through the second coupler, specifically: at the same time, when the first slave amplifier circuit and the second slave amplifier circuit are turned on at the same time, the two slave amplifier circuits constitute a balanced amplifier circuit. At this time, the two slave amplifier circuits will simultaneously transmit the first RF signal and the second RF signal to the first end and the second end of the second coupler. In the above manner, when the minimum turn-on operating power point of the first slave amplifier circuit is equal to the minimum turn-on operating power point of the second slave amplifier circuit, the power synthesis of the first RF signal and the second RF signal can be achieved based on the coupler, and the first RF synthesized signal and the second RF synthesized signal with different frequency bands can be output after heterodyne power division based on the coupler.

[0012] Exemplarily, when the minimum start-up operating power point of the first slave amplifier circuit is less than the minimum start-up operating power point of the second slave amplifier circuit, the first main amplifier circuit can form a CLMA-doherty architecture with the first slave amplifier circuit and the second slave amplifier circuit. The second main amplifier circuit can also form a CLMA-doherty architecture with the first slave amplifier circuit and the second slave amplifier circuit. Specifically: the first main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit can realize power synthesis based on a circulator to obtain a first RF synthesis signal. The second main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit can also realize power synthesis by a circulator to obtain a second RF synthesis signal. Due to the phase shift effect brought by the first coupler, there is a phase difference between the RF signals on the first slave amplifier circuit and the second slave amplifier circuit, which makes the first RF signal input by the first end and the second end of the second coupler cancel each other at the fourth end of the second coupler, so that the fourth end of the second coupler only outputs the second RF synthesis signal corresponding to the second RF signal. At the same time, the second RF signal input by the first end and the second end of the second coupler cancels each other at the third end of the second coupler, so that the third end of the second coupler only outputs the first RF synthesis signal corresponding to the first RF signal.

[0013] Regarding the case where the minimum start-up operating power point of the second slave amplifier circuit is equal to or greater than the minimum start-up operating power point of the second slave amplifier circuit, the difference from the case where the minimum start-up operating power point of the first slave amplifier circuit is less than the minimum start-up operating power point of the second slave amplifier circuit is that the start-up order of the two slave amplifier circuits is different. For the relevant technical principles, reference can be made to the relevant description of the embodiment in which the minimum start-up operating power point of the first slave amplifier circuit is less than the minimum start-up operating power point of the second slave amplifier circuit, which will not be repeated here.

[0014] In a possible implementation, the first combiner and the second combiner are inter-frequency power splitters. The first end and the third end of the first combiner and the second combiner are split ends of the inter-frequency power splitter. The second end of the first combiner and the second combiner is a combining end of the inter-frequency power splitter. The first end of the first combiner presents a band pass for the first RF signal and a band stop for the second RF signal; the third end of the first combiner presents a band pass for the second RF signal and a band stop for the first RF signal; the second end of the first combiner presents a band pass for the first RF signal and the second RF signal; the third end of the first combiner is used to output the second RF composite signal. The first end of the second combiner presents a band pass for the second RF signal and a band stop for the first RF signal; the third end of the first combiner presents a band pass for the first RF signal and a band stop for the second RF signal; the second end of the second combiner presents a band pass for the first RF signal and the second RF signal; the third end of the second combiner is used to output the first RF composite signal. The first RF composite signal is a composite signal of the first RF signal; the second RF composite signal is a composite signal of the second RF signal. In the embodiment of the present application, by using different-frequency power splitters as the first combiner and the second combiner, the flow direction of the first RF signal and the second RF signal can be changed, thereby reducing the transmission insertion loss, making the power amplifier circuit easier to design and expand.

[0015] Exemplarily, when a different frequency power divider is used as the first combiner and the second combiner, the minimum on-operating power point of the first main amplifier circuit is less than the minimum on-operating power point of the first slave amplifier circuit; the minimum on-operating power point of the second main amplifier circuit is less than the minimum on-operating power point of the first slave amplifier circuit; the minimum on-operating power point of the first slave amplifier circuit can be less than, equal to or greater than the minimum on-operating power point of the second slave amplifier circuit. Taking the case where the minimum on-operating power point of the first slave amplifier circuit can be equal to the minimum on-operating power point of the second slave amplifier circuit as an example, the first main amplifier circuit can form a SLMBA architecture with the first slave amplifier circuit and the second slave amplifier circuit. The second main amplifier circuit can also form a SLMBA architecture with the first slave amplifier circuit and the second slave amplifier circuit. The RF signals of two different frequency bands are processed by the first coupler and the second coupler, and are output from the third end and the fourth end of the second coupler respectively.

[0016] In a possible implementation, at least one of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit is a power synthesis circuit; the power synthesis circuit includes a plurality of amplification branch circuits. In the embodiment of the present application, because the first combiner and the second combiner are used. The load impedance of the main amplifier circuit is constant and relatively independent, the first main amplifier circuit, the second main amplifier circuit can be extended to one or more of the power synthesis circuit, the first slave amplifier circuit, and the second slave amplifier circuit. When designed as a power synthesis circuit, the power back-off amount of the power amplifier circuit can be increased.

[0017] Exemplarily, the power synthesis circuit includes at least one of the following: a doherty circuit, an inverse doherty circuit, an asymmetric doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage-type synthesis circuit, a chireix amplifier circuit, and an out-of-phase modulation amplifier circuit.

[0018] In a possible implementation, the power amplifier circuit further includes a shunt circuit; the shunt circuit is used to: input a first RF signal and a second RF signal, and output the first RF signal to the input end of the first main amplifier circuit and the first end of the first coupler, respectively, and output the second RF signal to the input end of the second main amplifier circuit and the second end of the first coupler, respectively. In an embodiment of the present application, the first RF signal and the second RF signal can be input through the shunt circuit. Multiple first RF signals and second RF signals can be obtained by shunting for power sharing and power synthesis.

[0019] In one possible implementation, the branching circuit includes a first power divider and a second power divider. The combining end of the first power divider is used to input a first RF signal; the first branching end and the second branching end of the first power divider are respectively used to output a first RF signal. The combining end of the second power divider is used to input a second RF signal; the first branching end and the second branching end of the second power divider are respectively used to output a second RF signal. In an embodiment of the present application, the first RF signal and the second RF signal can be respectively input through two power dividers, and the first RF signal and the second RF signal can be respectively branched.

[0020] In one possible implementation, the branch circuit includes a first inter-frequency power divider and a second inter-frequency power divider. The combining end of the first inter-frequency power divider is used to input a first RF signal and a second RF signal; the first branch end of the first inter-frequency power divider outputs a first RF signal; the second branch end of the first inter-frequency power divider is used to output a second RF signal. The combining end of the second inter-frequency power divider is used to input a first RF signal and a second RF signal. The first branch end of the second inter-frequency power divider outputs a first RF signal; the second branch end of the second inter-frequency power divider is used to output a second RF signal. In an embodiment of the present application, RF signals including the first RF signal and the second RF signal can be input through two inter-frequency power dividers, and each inter-frequency power divider performs inter-frequency power division to output the first RF signal and the second RF signal.

[0021] In a possible implementation, the branch circuit includes a third inter-frequency power divider, a third power divider, and a fourth power divider. The first branch end and the second branch end of the third inter-frequency power divider are respectively coupled to the combining end of the third power divider and the combining end of the fourth power divider. Wherein: the combining end of the third inter-frequency power divider is used to input the first RF signal and the second RF signal. The first branch end of the third inter-frequency power divider is used to output the first RF signal. The second branch end of the third inter-frequency power divider is used to output the second RF signal. The first branch end and the second branch end of the third power divider are respectively used to output one first RF signal. The first branch end and the second branch end of the fourth power divider are respectively used to output one second RF signal. In the embodiment of the present application, the RF signal including the first RF signal and the second RF signal can be subjected to inter-frequency power division by the inter-frequency power divider, and then the first RF signal and the second RF signal are respectively output to the third power divider and the fourth power divider. The third power divider divides the input first RF signal into multiple paths. The fourth power divider divides the input second RF signal into multiple paths.

[0022] In one possible implementation, the first RF signal and the second RF signal include RF signals of one or more sub-bands. In an embodiment of the present application, a RF signal with a relatively large bandwidth can be split into a plurality of first RF signals and second RF signals with relatively small bandwidths. The convergence of impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the back-off efficiency and full-load efficiency of the power amplifier circuit. In addition, splitting the traditional wideband main amplifier circuit into a plurality of RF signals with relatively small bandwidths can avoid the problem of difficult VBW design in concurrent scenarios, and will not cause deterioration of concurrent performance.

[0023] In a second aspect, an embodiment of the present application further provides a radio frequency generating device, which includes a radio frequency generating circuit and a power amplifier circuit as described in the first aspect above; the radio frequency generating circuit is used to output a radio frequency signal to the power amplifier circuit; the power amplifier circuit is used to perform power synthesis amplification according to the radio frequency signal.

[0024] In a third aspect, an embodiment of the present application further provides a communication system, which includes a baseband processing device and a radio frequency generation device as described in the second aspect above; the baseband processing device is used to output a baseband signal to the radio frequency generation device; the radio frequency generation device is used to obtain a radio frequency signal based on the baseband signal and perform power synthesis amplification on the radio frequency signal.

[0025] In a fourth aspect, an embodiment of the present application further provides a chip system, which includes at least one processor and at least one interface circuit. At least one processor and at least one interface circuit can be interconnected by lines. The processor is used to support the chip system to implement the various functions or steps in the above embodiments, and at least one interface circuit can be used to receive signals from other devices (such as communication interfaces, radio frequency generation circuits, power amplifier circuits, antennas, etc.), or to send signals to other devices (such as communication interfaces, radio frequency generation circuits, power amplifier circuits, antennas, etc.). The chip system may include chips and may also include other discrete devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic diagram of the structure of a power amplifier;

[0027] Figure 2 A schematic diagram of the structure of a communication system provided in an embodiment of the present application;

[0028] Figure 3 A schematic diagram of the structure of another communication system provided in an embodiment of the present application;

[0029] Figure 4 A schematic diagram of the structure of a first power amplifier circuit provided in an embodiment of the present application;

[0030] Figure 5 A schematic diagram of the structure of a second power amplifier circuit provided in an embodiment of the present application;

[0031] Figure 6 A schematic diagram of the structure of a third power amplifier circuit provided in an embodiment of the present application;

[0032] Figure 7 A schematic diagram of the structure of a fourth power amplifier circuit provided in an embodiment of the present application;

[0033] Figure 8 A schematic diagram of the structure of a fifth power amplifier circuit provided in an embodiment of the present application;

[0034] Fig. 9 A schematic diagram of the structure of a sixth power amplifier circuit provided in an embodiment of the present application Figure 1 ;

[0035] Fig.10 is a schematic diagram of the structure of a coupler;

[0036] Fig.11 A schematic diagram of the structure of another sixth power amplifier circuit provided in an embodiment of the present application Figure 2 ;

[0037] Fig.12 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 3 ;

[0038] Fig.13 A method provided in the embodiment of the present application Fig.11 The input power-current variation schematic diagram of the sixth power amplifier circuit shown;

[0039] Fig.14 A method provided in the embodiment of the present application Fig.11 The input power-voltage variation schematic diagram of the sixth power amplifier circuit shown;

[0040] Fig.15 A method provided in the embodiment of the present application Fig.11 The input power-impedance variation schematic diagram of the sixth power amplifier circuit shown;

[0041] Fig.16 A method provided in the embodiment of the present application Fig.11 The input power-efficiency variation diagram of the sixth power amplifier circuit shown;

[0042] Fig.17 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 4 ;

[0043] Fig.18 A method provided in the embodiment of the present application Fig.17 The input power-current variation schematic diagram of the sixth power amplifier circuit shown;

[0044] Fig.19 A method provided in the embodiment of the present application Fig.17 The input power-voltage variation schematic diagram of the sixth power amplifier circuit shown;

[0045] Fig. 20 A method provided in the embodiment of the present application Fig.17 The input power-impedance variation schematic diagram of the sixth power amplifier circuit shown;

[0046] Fig.21 A method provided in the embodiment of the present application Fig.17 The input power-efficiency variation diagram of the sixth power amplifier circuit shown;

[0047] Fig. 22 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 5 ;

[0048] Fig.23 A method provided in the embodiment of the present application Fig. 22 The input power-current variation schematic diagram of the sixth power amplifier circuit shown;

[0049] Fig.24 A method provided in the embodiment of the present application Fig. 22 The input power-voltage variation schematic diagram of the sixth power amplifier circuit shown;

[0050] Fig.25 A method provided in the embodiment of the present application Fig. 22 The input power-impedance variation schematic diagram of the sixth power amplifier circuit shown;

[0051] Fig.26 A method provided in the embodiment of the present application Fig. 22 The input power-efficiency variation diagram of the sixth power amplifier circuit shown;

[0052] Fig. 27 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 6 ;

[0053] Fig.28 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 7 ;

[0054] Fig.29 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 8 ;

[0055] Fig.30 A schematic diagram of the structure of another sixth power amplifier circuit provided in the embodiment of the present application Figure 9 . DETAILED DESCRIPTION

[0056] It should be noted that the terms "first", "second", etc. involved in the embodiments of the present application are only used to distinguish features of the same type and cannot be understood as indicating relative importance, quantity, order, etc.

[0057] The terms "exemplary" or "for example" and the like in the embodiments of the present application are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of the terms "exemplary" or "for example" is intended to present the related concepts in a specific way.

[0058] The terms "coupling" and "connection" involved in the embodiments of the present application should be understood in a broad sense. For example, they may refer to a direct physical connection, or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors or other electronic devices.

[0059] First, some basic concepts involved in the embodiments of the present application are explained:

[0060] Power amplifier: such as Figure 1 As shown, it is the basic structure of the power amplifier. In the figure, a gate bias circuit P1 is provided at the gate of the amplifying power tube M, and a drain bias circuit P2 is provided at the drain of the amplifying power tube M. The bias state between the poles of the amplifying power tube M is controlled by the gate bias circuit P1 and the drain bias circuit P2, so that the amplifying power tube M is in the power amplification state. The amplifying power tube M in the power amplification state can power amplify the input signal. According to the difference in the gate voltage configuration of the power tube, the minimum turn-on power point of the power tube is different, and the power state is also different. The working state of the amplifier can be divided into Class A, Class B, Class AB and Class C. The linearity of the class A power amplifier is the best, and it is suitable for power amplification of small signal DC signals. The class B power amplifier works in half cycle, and the single-ended class B power amplifier will produce a lot of nonlinear distortion. It is rarely used in the power amplification of radio frequency signals. It is usually based on two class B power amplifiers to form a push-pull structure to form a positive half cycle and a negative half cycle, which is applied to the power amplification of audio signals. The class AB power amplifier is a combination of the class A power amplifier and the class B power amplifier. The efficiency and linearity of the AB class power amplifier are between the A class power amplifier and the B class power amplifier, and it is widely used in the power amplification of radio frequency signals. In the embodiment of the present application, for the C class power amplifier, we can also divide the C class degree according to the different minimum opening working power points of the C class power amplifier, for example, into: shallow C class, C class, deep C class. This type of division is only used to represent multiple C class power amplifiers in the embodiment of the present application.

[0061] Power backoff of power amplifier: With the development of wireless communication technology, the modulation technology of RF signals has gradually become more complex, which makes the peak to average power ratio (PAPR) of the output RF signal larger. The RF signal input to the power amplifier is a modulated signal obtained by modulating data information onto a carrier signal. The amount of power backoff is related to the peak to average power ratio of the modulated signal.

[0062] Working efficiency of power amplifier: The working efficiency of power amplifier can be reflected by the drain working efficiency of power tube M, that is, the proportion of drain DC provided by the system converted into the RF signal actually output by the power amplifier. The working efficiency of power amplifier will decrease as the output power decreases.

[0063] The present application embodiment provides a communication system, such as Figure 2 As shown, the communication system 10000 includes a baseband processing device 1000 and a radio frequency generation device 2000. The baseband processing device 1000 is coupled to the radio frequency generation device 2000. The baseband processing device 1000 is used to output a baseband signal to the radio frequency generation device 2000; the radio frequency generation device 2000 is used to obtain a radio frequency signal according to the baseband signal and perform power synthesis amplification on the radio frequency signal.

[0064] like Figure 3 As shown, the RF generation device 2000 includes a RF generation circuit 100 and a power amplifier circuit 200. The output end of the RF generation circuit 100 is coupled to the power amplifier circuit 200. The RF generation circuit 100 is used to output a RF signal to the power amplifier circuit 200; the power amplifier circuit 200 is used to perform power synthesis amplification according to the RF signal.

[0065] Exemplarily, the radio frequency generating device 2000 may be a remote radio unit (RRU) or an active antenna unit (AAU), etc. The baseband processing device 1000 may be a building base band unit (BBU), etc.

[0066] With the development of wireless communication technology, the amount of data information that needs to be carried on RF signals has also increased rapidly. Along with this, the demand for bandwidth of RF signals has increased. In order to ensure the efficiency of high peak-to-average ratio RF signal power amplification, it is necessary to increase the power back-off as much as possible. The power amplifier is the device that consumes the most power in the transmitting device. When the power is backed off in large quantities, how to ensure that the power amplifier maintains a high efficiency is a major problem. At the same time, in the design of power amplifiers, improving back-off efficiency and expanding working bandwidth are contradictory requirements, and both have certain design difficulties. The design of high-power, high-bandwidth, large back-off and high-efficiency power amplifiers has always been a difficult problem in the industry. There are mainly the following difficulties: Difficulty 1. From the perspective of the design of high-efficiency power amplifiers, improving back-off efficiency and expanding working bandwidth are in a contradictory relationship. The architecture design of most power amplifiers needs to balance bandwidth and efficiency, and cannot achieve the ultimate efficiency expectations. Difficulty 2. From the perspective of the design of high-power power amplifiers, the power tube of the power amplifier has a smaller matching impedance and a larger parasitic parameter effect, which will seriously affect the design of the solution. Difficulty 3: From the design perspective of a wideband multi-frequency power amplifier, video bandwidth (VBW) is an important factor affecting broadband concurrency, and the control of VBW of a broadband power amplifier is also extremely challenging. Difficulty 4: The output end of the power amplifier in the base station needs to be connected to an isolator to ensure that the performance of the power amplifier is not affected by the back-end impedance mismatch. The performance of the high-power broadband power amplifier output isolator will greatly affect the output insertion loss, linearity and other performance.

[0067] In some possible implementations, the power amplifier circuit 200 may be a first power amplifier of a Doherty architecture. Figure 4 As shown, the first power amplifier circuit 200A includes a main amplifier branch 210A, a slave amplifier branch 220A and an impedance inversion line 230A. The main amplifier branch 210A works in class B or class AB, and the slave amplifier branch 220A works in class C. When the signal power of the input RF signal is relatively small, the main amplifier branch 210A is turned on to work. When the signal power of the input RF signal is relatively large, the slave amplifier branch 220A is turned on to work. When the slave amplifier branch 220A is turned on, the impedance of the junction between the main amplifier branch 210A and the slave amplifier branch 220A is inverted with the impedance of the main amplifier branch 210A through the impedance inversion line 230A, thereby realizing power synthesis of the RF signals output by the two branches under load traction. Figure 4 The Doherty architecture and its variant architecture shown in FIG. 1 can maintain good power fallback and working efficiency in single-frequency or dual-frequency signal amplification. Figure 4In order to expand the back-off amount in the illustrated architecture, it is necessary to increase the number of impedance inversion lines 230A and slave amplification branches 220A, which increases the device cost and device area of ​​the first power amplifier circuit 200A. When the number of slave amplification branches 220A reaches a certain level, the amplification gain coefficient of the first power amplifier circuit 200A will decrease. In addition, the impedance inversion line 230A has a certain frequency response, which will limit the bandwidth, making it extremely difficult for engineers to perform broadband design in the first power amplifier circuit 200A.

[0068] In some possible implementations, the power amplifier circuit 200 may be a second power amplifier based on a load modulated balanced amplifier (LMBA) architecture or a sequential load modulated balanced amplifier (SLMBA) architecture. Figure 5 As shown, the second power amplifier circuit 200B may include two balanced couplers 210B, two balanced amplifier circuits 220B and a control amplifier circuit 230B. The third end and the fourth end of the balanced coupler 210B of the front stage are respectively coupled with the input ends of the two balanced amplifier circuits 220B, and are coupled with the first end and the second end of the balanced coupler 210B of the rear stage through the output ends of the two balanced amplifier circuits 220B. The output end of the control amplifier circuit 230B is coupled with the third end of the balanced coupler 210B of the rear stage. The fourth end of the balanced coupler 210B of the rear stage serves as the output end of the second power amplifier circuit 200B. In some examples, the two balanced amplifier circuits 220B are main amplifiers working in class AB, and the control amplifier circuit 230B is a slave amplifier working in class C. In this case, the second power amplifier circuit 200B is a power amplifier based on LMBA. In some examples, the two balanced amplifier circuits 220B are slave amplifiers operating in class C, and the control amplifier circuit 230B is a master amplifier operating in class AB. In this case, the second power amplifier circuit 200B is a power amplifier based on SLMBA. Figure 5 In the embodiment shown, the third and fourth ends of the front-stage balanced coupler 210B output two RF signals with a phase difference of 90°. The two RF signals are power-amplified by the balanced amplifier circuit 220B and then output to the back-stage balanced coupler 210B. The RF signal output by the control amplifier circuit 230B coupled to the back-stage balanced coupler 210B can control the back-stage balanced coupler 210B to adjust the amplitude and phase of the three RF signals, so that each frequency band obtains the best load-pulling effect, and outputs the power-synthesized RF signal from the fourth end of the back-stage balanced coupler 210B. However, in the case of Figure 5In the design of the scheme shown, first, in order to meet the current base station needs, a power ratio scheme in which the operating power of the slave amplifier is higher than the operating power of the master amplifier is often used. The efficiency pit problem caused by this cannot be ignored. Second, VBW control is very difficult in broadband scenarios. In concurrent scenarios, the problems of power, efficiency, and linear performance deterioration still exist. Third, a balanced coupler is used as the output power synthesis unit in the architecture. Its power capacity is a major challenge in the current high-power power amplifier design. Fourth, it is difficult to achieve good performance with a broadband isolator connected to the output of a single-output power amplifier solution.

[0069] In some possible implementations, the power amplifier circuit 200 may be a third power amplifier circuit based on a dual-frequency single-output Doherty architecture with slave sharing. Figure 6 As shown, the third power amplifier circuit 200C includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-frequency shared slave amplifier circuit PA3, a first impedance inverter network INV1, and a second impedance conversion network INV2. Among them, the first single-frequency main amplifier circuit PA1 works in class AB, and is used to power amplify the radio frequency signal of the first frequency band. The second single-frequency main amplifier circuit PA2 works in class AB, and is used to power amplify the radio frequency signal of the second frequency band. The dual-frequency shared slave amplifier circuit PA3 works in class C, and is used to power amplify the radio frequency signals of the first frequency band and the second frequency band. The output end of the first single-frequency main amplifier circuit PA1 and the output end of the second single-frequency main amplifier circuit PA2 are respectively coupled to the output end of the dual-frequency shared slave amplifier circuit PA3 through a first impedance inverter network INV1 and then coupled to the second impedance change network INV2. Among them, the first single-frequency main amplifier circuit PA1 and the dual-frequency shared slave amplifier circuit PA3 can form a doherty architecture with respect to the first frequency band through the corresponding first impedance inverter network INV1 and the second impedance conversion network INV2. The second single-frequency main amplifier circuit PA2 and the dual-frequency shared slave amplifier circuit PA3 can form a Doherty architecture for the second frequency band through the corresponding first impedance inverter network INV1 and second impedance conversion network INV2. Figure 6 The third power amplifier circuit 200C shown can avoid the problem that the main path in the concurrent scene enters the saturation zone in advance due to the interaction of concurrent signals, and solves the saturation power, efficiency and linear deterioration problems of the concurrent scene. However, in the design of high-power broadband power amplifiers, the open-circuit characteristics of the amplifier circuit will add great difficulty to the design. In addition, the output of the broadband single-output solution needs to be connected to a broadband isolator, and the current design of broadband isolators is difficult to achieve good performance.

[0070] In some possible implementations, the power amplifier circuit 200 may be a fourth power amplifier circuit based on a dual-frequency dual-output Doherty architecture with slave sharing. Figure 7 As shown, the fourth power amplifier circuit 200D includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-frequency shared slave amplifier circuit PA3, two first impedance inversion networks INV1, two second impedance change networks INV2, a front-stage inter-frequency power divider F1, and a rear-stage inter-frequency power divider F2. The first single-frequency main amplifier circuit PA1 and the second single-frequency main amplifier circuit PA2 work in class AB, respectively, and the dual-frequency shared slave amplifier circuit PA3 works in class C. Among them, the two branch ends of the front-stage inter-frequency power divider F1 respectively input the radio frequency signals of the first frequency band and the second frequency band, and the combining end of the front-stage inter-frequency power divider F1 outputs the radio frequency signals of the first frequency band and the second frequency band to the input end of the dual-frequency shared slave amplifier circuit PA3. The output end of the dual-frequency shared slave amplifier circuit PA3 outputs the amplified radio frequency signals of the first frequency band and the second frequency band to the combining end of the rear-stage inter-frequency power divider F2. The output ends of the first single-frequency main amplifier circuit PA1 and the second single-frequency main amplifier circuit PA2 are respectively coupled to a first impedance inverter network INV1, and are coupled to the two branch ends of the subsequent heterofrequency power divider F2 through the corresponding first impedance inverter network INV1. One branch end of the subsequent heterofrequency power divider F2 outputs the RF signal of the first frequency band to the first impedance inverter network INV1 corresponding to the first single-frequency main amplifier circuit PA1, so as to form a Doherty architecture with the corresponding second impedance transformation network INV2 to perform power synthesis of the RF signal of the first frequency band; the other branch end of the subsequent heterofrequency power divider F2 outputs the RF signal of the second frequency band to the first impedance inverter network INV1 corresponding to the second single-frequency main amplifier circuit PA2, so as to form a Doherty architecture with the corresponding second impedance transformation network INV2 to perform power synthesis of the RF signal of the second frequency band. In the embodiments of the present application, Figure 7 In the architecture shown, a heterodyne power divider is used to realize dual output from different frequency bands of the slave amplifier circuit. In this broadband dual-output solution, the power amplifier output signal in the communication system can be connected to the antenna using two narrowband isolators, reducing the impact of the broadband isolator on the link performance. However, in this architecture, the heterodyne power divider must not only meet the heterodyne power division characteristics, but also participate in the load pulling of the RF signals in the two frequency bands, which increases the design difficulty. At the same time, its insertion loss will also cause the performance of the solution to deteriorate, making the design more difficult. In addition, the open-circuit characteristics of the slave amplifier circuit are still a design difficulty.

[0071] In some possible implementations, the power amplifier circuit 200 may be a fifth power amplifier circuit based on a circulator load modulated amplifier (CLMA). Figure 8As shown, the fifth power amplifier circuit 200E includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-frequency shared slave amplifier circuit PA3, an inter-frequency power divider F3, a first frequency band circulator C1, and a second frequency band circulator C2. The first single-frequency main amplifier circuit PA1 and the second single-frequency main amplifier circuit PA2 work in class AB, respectively, and the dual-frequency shared slave amplifier circuit PA3 works in class C. Among them, the output end of the dual-frequency shared slave amplifier circuit PA3 outputs the amplified radio frequency signals of the first frequency band and the second frequency band to the combined end of the inter-frequency power divider F3. The radio frequency signal of the first frequency band amplified by the slave path is output to the first end of the first frequency band circulator C1 through a branch end of the inter-frequency power divider F3, and the radio frequency signal of the second frequency band amplified by the slave path is output to the first end of the second frequency band circulator C2 through another branch end of the inter-frequency power divider F3. The third end of the first frequency band circulator C1 inputs the radio frequency signal of the first frequency band amplified by the main path from the first single-frequency main amplifier circuit PA1. The third end of the second frequency band circulator C2 inputs the second frequency band RF signal after main path amplification from the second single frequency main amplifier circuit PA2. Since the internal signal transmission of the circulator has directionality, the first frequency band RF signal after power synthesis can be output from the second end of the first frequency band circulator C1, and the second frequency band RF signal after power synthesis can be output from the second end of the second frequency band circulator C2. Figure 8 In the architecture shown, a circulator is used as a combiner for power synthesis, because the impedance of the isolated end of the circulator is constant and its impedance does not change with the change of load pull, which can effectively avoid the open circuit characteristic problem of the slave circuit. However, in this architecture, the design of the inter-frequency power divider F3 needs to take into account the out-of-band suppression, insertion loss and other indicators, which makes the design difficult.

[0072] In some possible implementations, the power amplifier circuit 200 may be a sixth power amplifier with a multi-frequency multi-output structure based on a coupler to implement frequency-differential power division. Fig. 9 As shown, the sixth power amplifier circuit 200F includes a first main amplifier circuit 210F, a second main amplifier circuit 220F, a first slave amplifier circuit 230F, a second slave amplifier circuit 240F, a first coupler 250F, a second coupler 260F, a first combiner 270F, and a second combiner 280F. In the first coupler 250F and the second coupler 260F: a direct path is formed between the first end and the fourth end, a direct path is formed between the second end and the third end, an isolation path is formed between the first end and the second end, and an isolation path is formed between the third end and the fourth end. The radio frequency signals output from the third end and the fourth end have a phase difference of 90°.

[0073] In some examples, the coupler may be a cross-broadside coupler, a branch line coupler, or a parallel broadside coupler, etc. Taking the branch line coupler as an example, the third end and the fourth end of the coupler output RF signals with a phase shift of 180° and a phase shift of 90°, respectively. Taking the cross-broadside coupler as an example, the third end and the fourth end of the coupler output RF signals with a phase shift of 90° and no phase shift, respectively. These couplers can all satisfy that the third end and the fourth end have a phase difference of 90°. In actual applications, whether the connection relationship of the coupler is the connection relationship recorded in this solution is determined based on the port position connection of the coupling end, the straight-through end, etc., rather than determining the connection relationship by the relative connection direction between the ports on the same side of the coupler. The subsequent embodiments of this application are all described based on the principle of the branch line coupler. As Fig.10 As shown, it is an example structure of a branch line coupler. In this figure, there is a straight-through path between the first end and the fourth end of the coupler, and there is a straight-through path between the second end and the third end of the coupler; there is an isolation path between the first end and the second end of the coupler, and there is an isolation path between the third end and the fourth end of the coupler. The two ends between the straight-through paths are mutually straight-through ends, the two ends between the isolation paths are mutually isolated ends, and the two ends connected by the straight-through paths and the isolation paths are mutually coupled ends. Therefore, the first end and the second end of the coupler are mutually isolated ends, and the first end and the fourth end of the coupler are mutually straight-through ends. Between the two ends that are straight-through ends, the signal transmission is phase-shifted by 90°. Between the two ends of the coupled ends, the signal will be phase-shifted by 180° and then output. At the two ends of the isolated ends, the signals are offset, so that the signals of each other at the isolated ends cannot be output. The bandwidth of the first main amplifier circuit 210F and the second main amplifier circuit 220F is smaller than the bandwidth of the first slave amplifier circuit 230F and the second slave amplifier circuit 240F. Among them:

[0074] The third end of the first coupler 250F is coupled to the second end of the second coupler 260F through the first slave amplifier circuit 230F; the fourth end of the first coupler 260F is coupled to the first end of the second coupler 260F through the second slave amplifier circuit 240F.

[0075] The output end of the first main amplifier circuit 210F is coupled to the first end of the first combiner 270F; the third end of the second coupler 260F is coupled to the second end of the first combiner 270F; the output end of the second main amplifier circuit 220F is coupled to the first end of the second combiner 280F; the fourth end of the second coupler 260F is coupled to the second end of the second combiner 280F.

[0076] The first end of the first coupler 250F and the input end of the first main amplifier circuit 210F are used to input the first RF signal; the second end of the first coupler 250F and the input end of the second main amplifier circuit 220F are used to input the second RF signal; the frequency bands of the first RF signal and the second RF signal are different; the third ends of the first combiner 270F and the second combiner 280F are used to output the RF synthesized signal.

[0077] For example, Fig. 9 As shown, taking the first end of the first coupler 250F as the input end as an example, when the first RF signal is input to the first end, the third end of the first coupler 250F as the coupling end of the first end will output the first RF signal with a phase change of 180°, and the fourth end of the first coupler 250F as the through end of the first end will output the first RF signal with a phase change of 90°, and the two RF signals are respectively transmitted to the second coupler 260F after passing through the first slave amplifier circuit 230F and the second slave amplifier circuit 240F. The first end of the second coupler 260F will input the first RF signal with a phase change of 90°, and obtain the first RF signal of 180° at the fourth end of the second coupler 260F, and obtain the first RF signal of 270° at the third end of the second coupler 260F. The second end of the second coupler 260F will input the first RF signal with a phase change of 180°, and obtain the first RF signal of 360° at the fourth end of the second coupler 260F, and obtain the first RF signal of 270° at the third end of the second coupler 260F. Therefore, there will be a 180° first RF signal and a 360° first RF signal at the fourth end of the second coupler 260F, and the two first RF signals will cancel each other out due to their opposite phases. There will be two 270° first RF signals at the third end of the second coupler 260F, and the two 270° first RF signals will be superimposed into a 270° first RF signal. Therefore, when the first RF signal is input from the first end of the first coupler 250F, only one 270° phase-shifted first RF signal will be output from the third end of the second coupler 260F. Similarly, when the second RF signal is input at the second end of the first coupler 250F, only a 270° phase-shifted second RF signal will be output from the fourth end of the second coupler 260F. Therefore, a hetero-frequency power division structure can be formed by the first coupler 250F and the second coupler 260F.

[0078] In this application Fig. 9In the illustrated embodiment, first, by setting the bandwidth of the first main amplifier circuit 210F and the second main amplifier circuit 220F to be smaller than the bandwidth of the first slave amplifier circuit 230F and the second slave amplifier circuit 240F. By narrow-banding the bandwidth design of the two main paths, the two main paths can be decomposed into two narrow-bandwidth power amplifier units. With the hardware design bandwidth reduced, the narrowband impedance convergence is more friendly, which is conducive to improving the ultimate performance. In addition, in the concurrent scenario, the two main amplifier circuits work in their respective frequency bands, avoiding the VBW problem, and can solve the problem of power, efficiency, and linear performance deterioration in the concurrent scenario. Second, based on the first coupler 250F and the second coupler 260F to form a hetero-frequency power division structure, compared with the solution of using a hetero-frequency power divider F3 to divide the RF signals between different frequency bands, it can have better out-of-band isolation and smaller insertion loss, improve the efficiency of the design scheme, and improve the linear performance of the link. Third, the RF signals of different frequency bands are divided into two RF signals, a first RF signal and a second RF signal, and the dual output architecture of the two outputs of the second coupler 260F can avoid the problems of large insertion loss and poor linearity caused by the use of broadband isolators. Fourth, the power sharing structure composed of the main path and the slave path can improve the back-off rate of the power amplifier and improve the power consumption efficiency, so as to achieve the energy-saving characteristics of the power amplifier while reducing the cost of the solution. The embodiment of the present application is as follows Fig. 9 As shown, it is easier to design a power amplifier with large back-off, large bandwidth and high working efficiency.

[0079] In some possible implementations, such as Fig.11 As shown, the first combiner 270F and the second combiner 280F are circulators; in the circulator, the RF signal is transmitted according to the flow direction of the first end 1, the second end 2 and the third end 3 of the circulator. The third end of the first combiner 270F is used to output the first RF synthetic signal; the third end of the second combiner 280F is used to output the second RF synthetic signal; the first RF synthetic signal is a synthetic signal of the first RF signal; the second RF synthetic signal is a synthetic signal of the second RF signal. In the embodiment of the present application, the first combiner 270F and the second combiner 280F are set between the second coupler 260F by using a circulator. The impedance of the circulator is stable, which can avoid the influence of impedance transformation when power synthesis is performed between different amplification branches, so that the design of the main amplifier circuit is independent of each other, and it is easier to realize the structure of each branch expansion into multiple amplifier circuits to expand and obtain a larger power fallback.

[0080] In some examples, Fig.11In the embodiment shown, the minimum start-up operating power point of the first main amplifier circuit 210F is less than the minimum start-up operating power point of the first slave amplifier circuit 230F; the minimum start-up operating power point of the second main amplifier circuit 220F is less than the minimum start-up operating power point of the first slave amplifier circuit 230F; the minimum start-up operating power point of the first slave amplifier circuit 230F is less than the minimum start-up operating power point of the second slave amplifier circuit 240F. In the embodiment of the present application, according to the design of the sixth power amplifier circuit 200F, when the input RF signal is in different power stages, the corresponding amplifier circuit is turned on for power synthesis. Therefore, each amplifier circuit corresponds to a minimum start-up operating power point. We use the size relationship of the minimum start-up operating power point to represent the start-up order of different amplifier circuits as the power of the input RF signal changes.

[0081] Exemplarily, when the minimum on-operating power point of the first slave amplifier circuit 230F is less than the minimum on-operating power point of the second slave amplifier circuit 240F, taking the sixth power amplifier circuit 200F as an example where only the first RF signal is input, at this time, the first master amplifier circuit 210F operates in class AB, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F can operate in class C, and the second master amplifier circuit 220F can be regarded as closed. Because the minimum on-operating power point of the first slave amplifier circuit 230F is less than the minimum on-operating power point of the second slave amplifier circuit 240F, it can be considered that the first slave amplifier circuit 230F operates in shallow class C and the second slave amplifier circuit 240F operates in deep class C. At this time, the first master amplifier circuit 210F is located at the isolation port of the first combiner 270F as a circulator, and forms the above-mentioned principle based on the CLMA architecture with the first slave amplifier circuit 230F and the second slave amplifier circuit 240F. The phase of the first RF signal output by the second slave amplifier circuit 240F is 90° greater than that of the first RF signal output by the first slave amplifier circuit 230F. The working mechanism based on the DHT architecture formed by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F will only output the first RF signal at the third end of the second coupler 260F.

[0082] Fig.13 for Fig.11 In the illustrated embodiment, the current generated by each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.14 for Fig.11 In the illustrated embodiment, the voltage generated by each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.15 for Fig.11In the embodiment shown, the impedance of each amplifying branch changes with the power change of the input first RF signal. In the figure, line ①, line ② and line ③ represent the first master amplifying circuit 210F, the first slave amplifying circuit 230F and the second slave amplifying circuit 240F respectively. Fig.16 for Fig.11 In the embodiment shown, Fig.13 , Fig.14 and Fig.15 The power efficiency diagram obtained by changing the parameters of the input RF signal is shown in the figure. The normalized level is used to represent the signal power range of the input RF signal. Fig.13 , Fig.14 , Fig.15 and Fig.16 As shown, when the first RF signal is in the low power interval, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are turned off, and only the first master amplifier circuit 210F is turned on. As the signal power of the input first RF signal reaches the power saturation point in the low power zone. When the first RF signal is in the medium power interval, the second slave amplifier circuit 240F is turned off, the first master amplifier circuit 210F and the first slave amplifier circuit 230F are turned on, the first master amplifier circuit 210F maintains a saturated working state, and the first slave amplifier circuit 230F tends to voltage saturation as the power of the input first RF signal increases, reaching a high-efficiency working state. When the first RF signal is in the high power interval, the first master amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F work simultaneously, and as the power of the input first RF signal increases, the second slave amplifier circuit 240F gradually reaches the maximum working efficiency. Fig.16 It can be seen that Fig.11 The sixth power amplifier circuit 200F shown can have three power saturation points, have a large power back-off amount and can maintain a high working efficiency at the power saturation point to achieve energy saving. The relevant effect diagram of the second RF signal can refer to the effect diagram of the first RF signal, which will not be repeated here.

[0083] Exemplarily, when the minimum turn-on operating power point of the first slave amplifier circuit 230F is less than the minimum turn-on operating power point of the second slave amplifier circuit 240F, the technical principle and beneficial effect description of the sixth power amplifier circuit 200F only inputting the second RF signal can refer to the aforementioned related content of only inputting the first RF signal, which will not be repeated here.

[0084] Exemplarily, when the minimum start-up operating power point of the first slave amplifier circuit 230F is less than the minimum start-up operating power point of the second slave amplifier circuit 240F, taking the sixth power amplifier circuit 200F as an example where the first RF signal and the second RF signal are simultaneously input, after the first RF signal and the second RF signal are transmitted through the first coupler 250F and the second coupler 260F, the first RF signal amplified by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F will be offset at the fourth end of the second coupler 260F and synthesized at the third end, thereby outputting the first RF signal at the third end of the second coupler 260F. Similarly, the second RF signal amplified by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F will also be output at the fourth end of the second coupler 260F. Therefore, in the case where Fig. 9 In the architecture shown, the first RF signal and the second RF signal of different frequency bands can be transmitted in the sixth power amplifier circuit 200F without affecting each other. The first slave amplifier circuit 230F and the second slave amplifier circuit 240F can be used as power amplifiers shared by the first RF signal and the second RF signal. Under this architecture, the design of the first main amplifier circuit 210F and the second main amplifier circuit 220F can be narrow-bandwidth. This solution can more easily realize a multi-band, large bandwidth, large back-off and high-efficiency power amplifier. In some examples, such as Fig.12 As shown, when the minimum start-up operating power points of the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are different, in order to improve the performance of the heterodyne power division function, the first isolation circuit ISO1 can be coupled to the third end of the second coupler 260F, and the second isolation circuit IS02 can be coupled to the fourth end of the second coupler 260F. Among them, the first isolation circuit IS01 is used to open the first RF signal and short the second RF signal. The second isolation circuit ISO2 is used to open the second RF signal and short the first RF signal. By setting the first isolation circuit ISO1 and the second isolation circuit ISO2, the signal of another frequency band can be absorbed, thereby improving the heterodyne power division characteristics. In some examples, in order to ensure the quality of signal transmission, impedance matching networks can be set in different amplification branches. For example, as Fig.12 As shown, output matching networks OMN can be respectively arranged between the first slave amplifier circuit 230F and the second slave amplifier circuit 240F and the second coupler 260F. Input matching networks IMN can also be respectively arranged between the first coupler 250F and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F.

[0085] For example, in Fig.11In the illustrated embodiment, the minimum on-operating power point of the first master amplifier circuit 210F is less than the minimum on-operating power point of the first slave amplifier circuit 230F; the minimum on-operating power point of the second master amplifier circuit 220F is less than the minimum on-operating power point of the first slave amplifier circuit 230F; the minimum on-operating power point of the first slave amplifier circuit 230F is equal to the minimum on-operating power point of the second slave amplifier circuit 240F.

[0086] Exemplarily, when the minimum start-up operating power point of the first slave amplifier circuit 230F is greater than the minimum start-up operating power point of the second slave amplifier circuit 240F, as the input RF signal power increases, the first slave amplifier circuit 230F is turned on later than the second slave amplifier circuit 240F. In this solution, the start-up sequence of the first slave amplifier circuit 230F and the second slave amplifier circuit 240F is opposite to the case when the minimum start-up operating power point of the first slave amplifier circuit 230F is less than the minimum start-up operating power point of the second slave amplifier circuit 240F. For a specific description, reference may be made to the description when the minimum start-up operating power point of the first slave amplifier circuit 230F is greater than the minimum start-up operating power point of the second slave amplifier circuit 240F, which will not be repeated here.

[0087] In some possible implementations, such as Fig.17 As shown, the first end and the third end of the first combiner 270F and the second combiner 280F are the branching ends of the inter-frequency power divider; the second ends of the first combiner 270F and the second combiner 280F are the combining ends of the inter-frequency power divider. The first end of the first combiner 270F presents a band pass for the first RF signal and a band stop for the second RF signal; the third end of the first combiner 270F presents a band pass for the second RF signal and a band stop for the first RF signal; the second end of the first combiner 270F presents a band pass for the first RF signal and the second RF signal; the third end of the first combiner 270F is used to output the second RF composite signal. The first end of the second combiner 280F presents a bandpass to the second RF signal and a bandstop to the first RF signal; the third end of the first combiner 270F presents a bandpass to the first RF signal and a bandstop to the second RF signal; the second end of the second combiner 280F presents a bandpass to the first RF signal and the second RF signal; the third end of the second combiner 280F is used to output the first RF composite signal.

[0088] For example, in Fig.17In the illustrated embodiment, the minimum on-operating power point of the first master amplifier circuit 210F is less than the minimum on-operating power point of the first slave amplifier circuit 240F; the minimum on-operating power point of the second master amplifier circuit 220F is less than the minimum on-operating power point of the first slave amplifier circuit 240F; the minimum on-operating power point of the first slave amplifier circuit 240F may be less than, equal to, or greater than the minimum on-operating power point of the second slave amplifier circuit 240F. At this time, the first master amplifier circuit 210F and the second master amplifier circuit 220F operate in class AB, and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F operate in class C.

[0089] For example, taking the sixth power amplifier circuit 200F as an example where only the first RF signal is input, Fig.17 As shown, the second main amplifier circuit 220F is turned off, the first main amplifier circuit 210F works in class A, and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F work in class C. The first combiner 270F is a different frequency power divider, and the first end of the first combiner 270F presents a band pass for the first RF signal and a band stop for the second RF signal; the third end of the first combiner 270F presents a band pass for the second RF signal and a band stop for the first RF signal; the second end of the first combiner 270F presents a band pass for the first RF signal and a band stop for the first RF signal. The first end of the second combiner 280F presents a band pass for the second RF signal and a band stop for the first RF signal; the third end of the second combiner 280F presents a band pass for the first RF signal and a band stop for the second RF signal; the second end of the second combiner 280F presents a band pass for the first RF signal and a band stop for the second RF signal. The output signal of the first master amplifier circuit 210F is coupled to the first end of the first combiner 270F, flows into the third end of the second coupler 260F through the second end of the first combiner 270F, and is combined with the first slave amplifier circuit 230F and the second slave amplifier circuit 240F through the second coupler 260F, and then outputted from the fourth end of the second coupler 260F to the second combiner 280F which is a different frequency power divider, and then flows from the second end of the second combiner 280F to the third end and is outputted. At this time, the first master amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F can form a SLMBA architecture. Fig.18 for Fig.17 In the illustrated embodiment, the current generated by each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.19 for Fig.17 In the illustrated embodiment, the voltage generated by each amplifying branch changes as the power of the input first radio frequency signal changes. Fig. 20 for Fig.17 In the illustrated embodiment, the impedance of each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.21 for Fig.17 In the embodiment shown, Fig.18 , Fig.19 and Fig. 20 Schematic diagram of power efficiency obtained by changing the parameters of the amplifier. In the figure, line ① represents the first master amplifier circuit 210F, and line ② represents the first slave amplifier circuit 230F and the second slave amplifier circuit 240F as two balanced amplifiers. Fig.18 , Fig.19 , Fig. 20 and Fig.21 As shown, when the first RF signal is in the low power interval, only the first main amplifier circuit 210F is turned on, and the first RF signal is transmitted from the first main amplifier circuit 210F to the first end of the first combiner 270F, and is output from the second end of the first combiner 270F to the third end of the second coupler 260F, and then the first RF signal is output through the fourth end of the second coupler 260F. After the first RF signal is input to the second end of the second combiner 280F, the first RF signal is output from the third end of the second combiner 280F. When the first RF signal is in the high power interval, the first main amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are turned on at the same time, and the first RF composite signal is output from the third end of the second combiner 280F. For the relevant effect diagram of the second RF signal, reference can be made to the effect diagram of the first RF signal, which will not be repeated here.

[0090] Exemplarily, when the minimum on-operating power point of the first slave amplifier circuit 240F is equal to the minimum on-operating power point of the second slave amplifier circuit 240F, the first slave amplifier circuit 240F and the second slave amplifier circuit 240F are turned on at the same time. When the minimum on-operating power point of the first slave amplifier circuit 240F is less than the minimum on-operating power point of the second slave amplifier circuit 240F, as the input RF signal power increases, the first slave amplifier circuit 240F is turned on before the second slave amplifier circuit 240F. When the minimum on-operating power point of the first slave amplifier circuit 240F is less than the minimum on-operating power point of the second slave amplifier circuit 240F, as the input RF signal power increases, the first slave amplifier circuit 240F is turned on after the second slave amplifier circuit 240F.

[0091] For example, when Fig.17 The description of the technical principle and technical effect of the sixth power amplifier circuit 200F in the embodiment shown in the figure only inputting the second RF signal can refer to the aforementioned Fig.17 The relevant description of the illustrated embodiment will not be repeated here.

[0092] For example, when Fig.17 In the illustrated embodiment, when the sixth power amplifier circuit 200F inputs the first RF signal and the second RF signal simultaneously, the RF signals in two different frequency bands do not affect each other.

[0093] This application Fig.17 In the embodiment shown, the input and output process of the amplified first RF signal is different from that of the traditional power amplifier through the structure of the bridge and the frequency-differentiated power divider. By changing the transmission direction of the main RF signal and the RF synthesis signal, the insertion loss of the transmission can be reduced, the performance of the power amplification can be improved, and the sixth power amplifier circuit 200F can be more easily designed with high power, high bandwidth, high back-off and high efficiency.

[0094] For example, in Fig.11 and Fig.17 In the illustrated architecture, at least one of the first main amplifier circuit 210F, the second main amplifier circuit 220F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F can be expanded into a power synthesis circuit; the power synthesis circuit includes a plurality of amplification branch circuits. By expanding the power synthesis circuit structure, the back-off amount of the sixth power amplifier circuit 200F can be further expanded.

[0095] Exemplarily, the power synthesis circuit includes at least one of the following: a doherty circuit, an inverse doherty circuit, an asymmetric doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage-type synthesis circuit, a chireix amplifier circuit, and an out-of-phase modulation amplifier circuit.

[0096] For example, Fig.11 The first main amplifier circuit 210F in the illustrated structure is a power synthesis circuit, and the power synthesis circuit is an amplifier circuit of Doherty structure as an example. Fig. 22 As shown, the minimum on-operating power point of the first master amplifier circuit 210F is less than the minimum on-operating power point of the first slave amplifier circuit 230F, and the minimum on-operating power point of the first slave amplifier circuit 230F is less than the minimum on-operating power point of the second slave amplifier circuit 240F. At the same time, the first master amplifier circuit 210F includes a master amplifier 211F and a slave amplifier 212F. Among them, the minimum on-operating power point of the master amplifier 211F is less than the minimum on-operating power point of the slave amplifier 212F. Then, it can be defined that the master amplifier 211F works in class AB, the slave amplifier 212F works in shallow class C, the first slave amplifier circuit 230F works in class C, and the second slave amplifier circuit 240F works in deep class C. Fig.23 for Fig. 22 In the illustrated embodiment, the current generated by each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.24 for Fig. 22 In the illustrated embodiment, the voltage generated by each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.25 for Fig. 22 In the illustrated embodiment, the impedance of each amplifying branch changes as the power of the input first radio frequency signal changes. Fig.26 for Fig. 22 In the embodiment shown, Fig.23 , Fig.24 and Fig.25 Schematic diagram of power efficiency obtained by changing the parameters of the first master amplifier circuit 210F. In the figure, line ①, line ②, line ③ and line ④ respectively represent the master amplifier 211F of the first master amplifier circuit 210F, the slave amplifier 212F of the first master amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F. Fig.23 , Fig.24 , Fig.25 and Fig.26 As shown, when only the first RF signal is input to the sixth power amplifier circuit 200F: when the first RF signal is in the low power range, only the main amplifier 211F is turned on, and as the power of the input first RF signal increases, the voltage of the branch where the main amplifier 211F is located reaches saturation. When the first RF signal is in the medium and low power range, the main amplifier 211F and the slave amplifier 212F are turned on, and as the power of the input first RF signal increases, the voltage of the branch where the main amplifier 211F is located remains unchanged, and the current is saturated; the voltage and current of the slave amplifier 212F are both close to saturation. When the first RF signal is in the medium and high power range, the main amplifier 211F, the slave amplifier 212F and the first slave amplifier circuit 230F are all turned on, and the voltage of the first slave amplifier circuit 230F is close to saturation. When the first RF signal is in the high power range, the main amplifier 211F, the slave amplifier 212F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are all turned on, and the second slave amplifier circuit 240F performs load-pull modulation on the first slave amplifier circuit 230F. As the power of the input first RF signal increases, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F gradually reach a power saturation state. For the relevant effect diagram of the second RF signal, reference can be made to the effect diagram of the first RF signal, which will not be repeated here.

[0097] For example, Fig. 22 As shown, in the first main amplifier circuit 210F, a first RF signal can be divided into a first RF signal at 0° and a first RF signal at 90° by a coupler cou, and inputted into the main amplifier 211F and the slave amplifier 212F respectively. Exemplarily, the first RF signal can also be inputted into the main amplifier 211F and the slave amplifier 212F respectively, and a phase compensation line is set at the front stage of the slave amplifier 212F so that the slave amplifier 212F can input the first RF signal with a phase shift of 90°.

[0098] In the embodiment of the present application, Fig.11 and Fig.17 The architecture shown uses a first combiner 270F and a second combiner 280F, through which the impedance of the first main amplifier circuit 210F and the second main amplifier circuit 220F are constant and relatively independent in design. Fig.11 and Fig.17 In the embodiment shown, at least one of the first master amplifier circuit 210F, the second master amplifier circuit 220F, the first slave amplifier circuit 240F, and the second slave amplifier circuit 240F can be expanded into a power synthesis circuit. By expanding the power synthesis circuit structure, the back-off amount of the sixth power amplifier circuit 200F can be further expanded. Fig. 22 For the general Fig.11 In the embodiment shown, the first main amplifier circuit 210F is expanded to an example diagram of a larger power back-off structure. Fig.11 The related technical principles and technical effects of expanding at least one of the second master amplifier circuit 220F, the first slave amplifier circuit 240F and the second slave amplifier circuit 240F in the embodiment shown in the figure into a power synthesis circuit, and Fig.17 The related technical principles and technical effects of at least one of the first main amplifier circuit 210F, the second main amplifier circuit 220F, the first slave amplifier circuit 240F and the second slave amplifier circuit 240F in the illustrated embodiment being expanded into a power synthesis circuit can be referred to in the aforementioned Fig. 20 The relevant description of the embodiments of the present invention will not be repeated here.

[0099] In some possible implementations, such as Fig. 27 As shown, in Fig. 9 , Fig.11 , Fig.17 and Fig. 22 On the basis of the embodiment shown, the sixth power amplifier circuit 200F also includes a shunt circuit 290F; the shunt circuit 290F is used to: input the first RF signal and the second RF signal, and output the first RF signal to the input end of the first main amplifier circuit 210F and the first end of the first coupler 250F respectively, and output the second RF signal to the input end of the second main amplifier circuit 220F and the second end of the first coupler 250F respectively.

[0100] In some examples, such as Fig.28 As shown, the branch circuit 290F includes a first power divider 291F and a second power divider 292F. The combined end of the first power divider 291F is used to input a first radio frequency signal. The first branch end and the second branch end of the first power divider 291F are respectively used to output a first radio frequency signal. The combined end of the second power divider 292F is used to input a second radio frequency signal; the first branch end and the second branch end of the second power divider 292F are respectively used to output a second radio frequency signal.

[0101] In some examples, such as Fig.29 As shown, the branch circuit 290F includes a first inter-frequency power divider 293F and a second inter-frequency power divider 294F. The combining end of the first inter-frequency power divider 293F is used to input a first RF signal and a second RF signal; the first branch end of the first inter-frequency power divider 293F outputs a first RF signal; and the second branch end of the first inter-frequency power divider 293F is used to output a second RF signal. The combining end of the second inter-frequency power divider 294F is used to input a first RF signal and a second RF signal; the first branch end of the second inter-frequency power divider 294F outputs a first RF signal; and the second branch end of the second inter-frequency power divider 294F is used to output a second RF signal. Exemplarily, as Fig.29 As shown, the first RF signal and the second RF signal output by the first inter-frequency power divider 293F can be provided to the first main amplifier circuit 210F and the first coupler 250F, respectively. The first RF signal and the second RF signal output by the second inter-frequency power divider 294F can be provided to the second main amplifier circuit 220F and the first coupler 250F, respectively. Exemplarily, the first RF signal and the second RF signal output by the first inter-frequency power divider 293F can also be provided to the first main amplifier circuit 210F and the second main amplifier circuit 220F, respectively. The first RF signal and the second RF signal output by the second inter-frequency power divider 294F are output to the first coupler 250F.

[0102] In some examples, such as Fig.30 As shown, the branch circuit 290F includes a third inter-frequency power divider 295F, a third power divider 296F and a fourth power divider 297F. The first branch end and the second branch end of the third inter-frequency power divider 295F are respectively coupled with the combining end of the third power divider 296F and the combining end of the fourth power divider 297F. Among them: the combining end of the third inter-frequency power divider 295F is used to input the first radio frequency signal and the second radio frequency signal; the first branch end of the third inter-frequency power divider 295F is used to output the first radio frequency signal; the second branch end of the third inter-frequency power divider 295F is used to output the second radio frequency signal. The first branch end and the second branch end of the third power divider 296F are respectively used to output one first radio frequency signal; the first branch end and the second branch end of the fourth power divider 297F are respectively used to output one second radio frequency signal.

[0103] In the embodiment of the present application, the sixth power amplifier circuit 200F can divide the input first RF signal and the input second RF signal into multiple paths through the branch circuit 290F and output them to different amplification branches for use. The branching method can adopt the above Fig.28 , Fig.29 and Fig.30 The implementation shown may also adopt other branching methods, which are not limited in this application.

[0104] In some possible implementations, the first RF signal and the second RF signal include RF signals of one or more sub-bands. In some examples, the first RF signal may be located in the low three-band (e.g., 700 MHz, 800 MHz, and 900 MHz), and the second RF signal may be located in the middle three-band (e.g., 1.8 GHz, 2.1 GHz, and 2.6 GHz). Alternatively, the first RF signal and / or the second RF signal may also be located in other frequency bands. In some examples, the first RF signal may include the first of the low three-band, and the second RF signal may include the other two of the low three-band. Alternatively, the first RF signal may include two of the low three-band, and the second RF signal may include the remaining one of the third frequency. In some examples, the first RF signal may be located in the dual-band of 1.8 GHz and 2.1 GHz in the middle three-band, and the second RF signal may be located in the single-band of 2.6 GHz in the middle three-band. In the embodiment of the present application, by dividing one main path into two designs with relatively smaller bandwidths, for example, the relative bandwidth of the middle three-band is 40%, the middle three-band is divided into dual-bands of 1.8 GHz and 2.1 GHz (relative bandwidth 18%) and a single-band of 2.6 GHz (relative bandwidth 3%). The convergence of the impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the back-off efficiency and full-load efficiency of the sixth power amplifier circuit 200F.

[0105] The embodiments of the present application provide a power amplifier circuit, a radio frequency generation device, and a communication system. First, in the power amplifier circuit, a dual coupler is used to be equivalent to a heterodyne power division structure. When a combiner is coupled with two main amplifier circuits to achieve dual output, the design difficulty of the broadband isolator can be avoided. Second, the heterodyne power division structure based on the equivalent of a bridge can avoid the problem of poor out-of-band suppression and high design difficulty caused by the use of heterodyne power dividers. Third, the bandwidth of the main circuit is designed to be smaller than the bandwidth of the power-sharing slave circuit, so that the main circuit can be decomposed from the broadband power amplifier, effectively solving the VBW design problem of multi-frequency concurrency in the power amplifier circuit, and improving the concurrency efficiency and linearity. Fourth, the design of decomposing the original one main circuit into two relatively smaller bandwidth main circuits reduces the relative bandwidth of each main circuit, making the convergence of the impedance design better, and can further improve the efficiency of each design unit, thereby improving the fallback efficiency and full load efficiency. Fifth, use a different-frequency power splitter or circulator as a combiner to achieve relative stability between the main path and the slave path, so that the slave path and / or slave path in the solution can also be expanded to obtain a power amplification architecture with a larger back-off amount.

[0106] The embodiment of the present application also provides a chip system, which includes at least one processor and at least one interface circuit. At least one processor and at least one interface circuit can be interconnected via lines. The processor is used to support the chip system to implement each function or step in the above method embodiment, and at least one interface circuit can be used to receive signals from other devices (such as communication interfaces, radio frequency generation circuits, power amplifier circuits, antennas, etc.), or send signals to other devices (such as communication interfaces, radio frequency generation circuits, power amplifier circuits, antennas, etc.). The chip system may include chips and may also include other discrete devices.

[0107] The controller involved in the embodiments of the present application may be a chip. For example, it may be a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a system on chip (SoC), a central processor unit (CPU), a network processor (NP), a digital signal processor (DSP), a microcontroller unit (MCU), a programmable logic device (PLD), or other integrated chips.

[0108] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0109] Those of ordinary skill in the art will appreciate that the modules and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0110] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and modules described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0111] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of modules is only a logical function division, and there may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0112] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical modules, that is, they may be located in one device or distributed on multiple devices. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0113] In addition, each functional module in each embodiment of the present application may be integrated into one device, or each module may exist physically separately, or two or more modules may be integrated into one device.

[0114] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using a software program, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loading and executing computer program instructions on a computer, the process or function according to the embodiment of the present application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. Computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, computer instructions can be transmitted from a website site, computer, server or data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (Digital Subscriber Line, DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. Computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server, data center, etc. that contains one or more servers that can be integrated with a medium. The available medium may be a magnetic medium (eg, a floppy disk, a hard disk, a magnetic tape), an optical medium (eg, a DVD), or a semiconductor medium (eg, a solid state disk (SSD)).

[0115] The communication system in the embodiment of the present application may be a device for realizing wireless communication functions, such as a terminal or a chip that can be used in a terminal, etc. The terminal may be a UE, an access terminal, a terminal unit, a terminal station, a mobile station, a mobile station, a remote station, a remote terminal, a mobile device, a wireless communication device, a terminal agent or a terminal device, etc. in a 6G network or a future evolved public land mobile network (PLMN). The access terminal may be a cellular phone, a cordless phone, a session initiation protocol (SIP) phone, a wireless local loop (WLL) station, a personal digital assistant (PDA), a handheld device with wireless communication function, a computing device or other processing device connected to a wireless modem, a vehicle-mounted device or a wearable device, a virtual reality (VR) terminal device, an augmented reality (AR) terminal device, a wireless terminal in industrial control, a wireless terminal in self-driving, a wireless terminal in remote medical, a wireless terminal in smart grid, a wireless terminal in transportation safety, a wireless terminal in smart city, a wireless terminal in smart home, etc. Optionally, the electronic device and the transmitting device may be mobile or fixed.

[0116] In a possible implementation, the communication system, baseband processing device and radio frequency generation device in the embodiment of the present application may be a network device that communicates with the terminal device. The network device may include a transmission and reception point (TRP), a base station, a remote radio unit (RRU) or a baseband unit (BBU) (also referred to as a digital unit (DU)) of a separated base station, a satellite, a drone, a broadband network gateway (BNG), a converged switch, a non-3GPP access device, a relay station or an access point, etc.

[0117] In addition, the base station can be a base transceiver station (BTS) in a global system for mobile communication (GSM) or code division multiple access (CDMA) network, an NB (Node B) in wideband code division multiple access (WCDMA), an eNB or eNodeB (evolutional NodeB) in LTE, a wireless controller in a cloud radio access network (CRAN) scenario, or a base station in a 5G communication system (such as a next-generation Node B (gNodeB, gNB)), or a base station in a future evolution network, etc., without specific limitation here.

[0118] In addition, the communication architecture and business scenarios described in the embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Ordinary technicians in this field can know that with the evolution of the communication architecture and the emergence of new business scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0119] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A power amplifier circuit, characterized in that: The invention comprises a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, a second slave amplifier circuit, a first coupler, a second coupler, a first combiner and a second combiner; in the first coupler and the second coupler: an isolation path is formed between the first end and the second end, a through path is formed between the first end and the fourth end, and a phase difference of 90° is formed between the radio frequency signals outputted from the third end and the fourth end; the bandwidth of the first main amplifier circuit and the second main amplifier circuit is smaller than the bandwidth of the first slave amplifier circuit and the second slave amplifier circuit; wherein: The third end of the first coupler is coupled to the second end of the second coupler through the first slave amplifier circuit; the fourth end of the first coupler is coupled to the first end of the second coupler through the second slave amplifier circuit; The output end of the first main amplifier circuit is coupled to the first end of the first combiner; the third end of the second coupler is coupled to the second end of the first combiner; the output end of the second main amplifier circuit is coupled to the first end of the second combiner; the fourth end of the second coupler is coupled to the second end of the second combiner; The first end of the first coupler and the input end of the first main amplifier circuit are used to input a first radio frequency signal; the second end of the first coupler and the input end of the second main amplifier circuit are used to input a second radio frequency signal; the first radio frequency signal and the second radio frequency signal have different frequency bands; the third ends of the first combiner and the second combiner are used to output a radio frequency composite signal.

2. The power amplifier circuit according to claim 1, characterized in that: The first combiner and the second combiner are circulators; in the circulators, the RF signal is transmitted in the direction of flow through the first end, the second end and the third end of the circulator, and will not be transmitted in the reverse direction; the third end of the first combiner is used to output a first RF synthetic signal; the third end of the second combiner is used to output a second RF synthetic signal; the first RF synthetic signal is a synthetic signal of the first RF signal; and the second RF synthetic signal is a synthetic signal of the second RF signal.

3. The power amplifier circuit according to claim 2, characterized in that: The minimum start-up operating power point of the first master amplifier circuit is less than the minimum start-up operating power point of the first slave amplifier circuit; The minimum start-up operating power point of the second master amplifier circuit is less than the minimum start-up operating power point of the first slave amplifier circuit; The minimum start-up operating power point of the first slave amplifier circuit is less than, equal to or greater than the minimum start-up operating power point of the second slave amplifier circuit.

4. The power amplifier circuit according to claim 1, characterized in that: The first combiner and the second combiner are inter-frequency power splitters; the first end and the third end of the first combiner and the second combiner are branch ends of the inter-frequency power splitters; the second end of the first combiner and the second combiner is a combining end of the inter-frequency power splitters; The first end of the first combiner presents a band pass for the first RF signal and a band stop for the second RF signal; the third end of the first combiner presents a band pass for the second RF signal and a band stop for the first RF signal; the second end of the first combiner presents a band pass for the first RF signal and the second RF signal; the third end of the first combiner is used to output a second RF composite signal; The first end of the second combiner presents a band pass for the second RF signal and a band stop for the first RF signal; the third end of the first combiner presents a band pass for the first RF signal and a band stop for the second RF signal; the second end of the second combiner presents a band pass for the first RF signal and the second RF signal; the third end of the second combiner is used to output a first RF composite signal; The first RF composite signal is a composite signal of the first RF signal; the second RF composite signal is a composite signal of the second RF signal.

5. The power amplifier circuit according to claim 4, characterized in that: The minimum start-up operating power point of the first master amplifier circuit is less than the minimum start-up operating power point of the first slave amplifier circuit; The minimum start-up operating power point of the second master amplifier circuit is less than the minimum start-up operating power point of the first slave amplifier circuit; The minimum start-up operating power point of the first slave amplifier circuit is less than, equal to or greater than the minimum start-up operating power point of the second slave amplifier circuit.

6. The power amplifier circuit according to any one of claims 1 to 5, characterized in that: At least one of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit is a power synthesis circuit; the power synthesis circuit includes a plurality of amplification branch circuits.

7. The power amplifier circuit according to claim 6, characterized in that: The power synthesis circuit includes at least one of the following: a doherty circuit, an inverse doherty circuit, an asymmetric doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage type synthesis circuit, a chireix amplifier circuit and an out-of-phase modulation amplifier circuit.

8. The power amplifier circuit according to any one of claims 1 to 7, characterized in that: The power amplifier circuit also includes a shunt circuit; the shunt circuit is used to: input the first RF signal and the second RF signal, and output the first RF signal to the input end of the first main amplifier circuit and the first end of the first coupler respectively, and output the second RF signal to the input end of the second main amplifier circuit and the second end of the first coupler respectively.

9. The power amplifier circuit according to claim 8, characterized in that: The branching circuit includes a first power divider and a second power divider; The combining end of the first power divider is used to input the first radio frequency signal; the first branching end and the second branching end of the first power divider are respectively used to output one channel of the first radio frequency signal; The combining end of the second power divider is used for inputting the second radio frequency signal; The first branch end and the second branch end of the second power divider are respectively used to output one channel of the second radio frequency signal.

10. The power amplifier circuit according to claim 8, characterized in that: The branching circuit includes a first different-frequency power divider and a second different-frequency power divider; The combining end of the first inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal; the first branching end of the first inter-frequency power divider outputs one channel of the first radio frequency signal; The second branch end of the first inter-frequency power divider is used to output one channel of the second radio frequency signal; The combining end of the second inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal; the first branching end of the second inter-frequency power divider outputs one channel of the first radio frequency signal; The second branch end of the second different-frequency power divider is used to output one channel of the second radio frequency signal.

11. The power amplifier circuit according to claim 8, characterized in that: The branching circuit includes a third different-frequency power divider, a third power divider and a fourth power divider; the first branching end and the second branching end of the third different-frequency power divider are respectively coupled with the combining end of the third power divider and the combining end of the fourth power divider; wherein: The combining end of the third inter-frequency power divider is used to input the first radio frequency signal and the second radio frequency signal; the first branching end of the third inter-frequency power divider is used to output the first radio frequency signal; and the second branching end of the third inter-frequency power divider is used to output the second radio frequency signal; The first branch end and the second branch end of the third power divider are respectively used to output one channel of the first radio frequency signal; The first branch end and the second branch end of the fourth power divider are respectively used to output one channel of the second radio frequency signal.

12. The power amplifier circuit according to any one of claims 1 to 11, characterized in that: The first radio frequency signal and the second radio frequency signal include radio frequency signals of one or more sub-frequency bands.

13. A radio frequency generating device, characterized in that: It comprises a radio frequency generating circuit and a power amplifier circuit as described in any one of claims 1 to 12; the radio frequency generating circuit is used to output a radio frequency signal to the power amplifier circuit; the power amplifier circuit is used to perform power synthesis amplification according to the radio frequency signal.

14. A communication system, characterized in that: comprising a baseband processing device and a radio frequency generating device as claimed in claim 13; The baseband processing device is used to output a baseband signal to the radio frequency generating device; the radio frequency generating device is used to obtain a radio frequency signal according to the baseband signal, and perform power synthesis amplification on the radio frequency signal.

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