Ultrasonic oscillation sub-element and ultrasonic probe

Abstract

The invention provides an ultrasonic oscillator element and an ultrasonic probe. The ultrasonic oscillator element comprises a substrate, a grounding layer, a first insulating layer, a second insulating layer, a first electrode layer, a third insulating layer and a second electrode layer. The first electrode layer is used for receiving DC voltage. The second electrode layer is used for receiving an alternating current signal. Before the ultrasonic oscillation sub-element is driven, the first insulating layer and the second insulating layer have a cavity. When the ultrasonic oscillation sub-element is driven, the first electrode layer receives the direct current voltage and is used for at least driving the second insulating layer to contract towards the cavity. The second electrode layer receives an alternating current signal and is used for at least driving the third insulating layer to generate vibration.

Description

Technical Field

[0001] The invention relates to an oscillating element, in particular to an ultrasonic oscillating element and an ultrasonic probe. Background Art

[0002] The current Capacitance Micromachined Ultrasonic Transducer (CMUT) requires a bias tee circuit to drive the CMUT film. The driving method of the CMUT film requires the incorporation of AC and DC into the electrodes of the oscillating film. DC pre-tensions the CMUT film, and AC oscillates the film to generate transmitted ultrasonic waves, or the film oscillates to generate AC that returns to the ultrasonic system. Since the analog-to-digital converter (ADC) of the ultrasonic system cannot handle DC high voltage levels (e.g., 200V), it is necessary to use a capacitor with sufficient withstand voltage to filter out the DC to avoid burning the system ADC. In addition, since the signal generated by the AC oscillation of a single array element is fed back to other array elements, causing signal misjudgment, it is necessary to set a resistor (e.g., 128-way resistor) between the common DC and each CMUT array element so that the array element signal can correctly return to the ADC defined by the system array element.

[0003] In summary, the existing capacitive micromachined ultrasonic transducer needs to be provided with a bias device for each CMUT element, so the overall volume of the system is bulky.

[0004] Therefore, it is necessary to design a new type of ultrasonic oscillator element and ultrasonic probe to overcome the above defects. Summary of the invention

[0005] The object of the present invention is to provide an ultrasonic oscillator element and an ultrasonic probe, which can reduce the volume of the system.

[0006] To achieve the above-mentioned object, the present invention provides an ultrasonic oscillator element, comprising: a substrate; a grounding layer, arranged on the substrate; a first insulating layer, wherein the grounding layer is arranged between the substrate and the first insulating layer; a second insulating layer, wherein the first insulating layer is arranged between the grounding layer and the second insulating layer; a first electrode layer, used for receiving a direct current voltage, wherein the second insulating layer is arranged between the first insulating layer and the first electrode layer; a third insulating layer, wherein the first electrode layer is arranged between the second insulating layer and the third insulating layer; and a second electrode layer, used for receiving an alternating current signal, and arranged between the second insulating layer and the third insulating layer; wherein before the ultrasonic oscillator element is driven, there is a cavity between the first insulating layer and the second insulating layer; wherein when the ultrasonic oscillator element is driven, the first electrode layer receives the direct current voltage to at least drive the second insulating layer to contract toward the cavity, and the second electrode layer receives the alternating current signal to at least drive the third insulating layer to vibrate.

[0007] Preferably, the method further comprises: a fourth insulating layer disposed between the first electrode layer and the second electrode layer.

[0008] Preferably, at least one of the first electrode layer and the cavity is square or circular.

[0009] Preferably, the device further comprises: a first lead pattern layer, which is disposed between the third insulating layer and the second insulating layer, the first lead pattern layer is electrically connected to the first electrode layer, and the first electrode layer receives the DC voltage via the first lead pattern layer.

[0010] Preferably, the pattern of the first lead pattern layer is linear or cross-shaped.

[0011] Preferably, the first electrode layer and the second electrode layer are arranged on the same plane perpendicular to a stacking direction, and the stacking direction is a connection direction of the second insulating layer and the third insulating layer.

[0012] Preferably, the first electrode layer and the second electrode layer are arranged on a plane perpendicular to a stacking direction, and the stacking direction is a connection direction of the second insulating layer and the third insulating layer.

[0013] Preferably, when the first electrode layer and the second electrode layer are arranged on the same plane perpendicular to the stacking direction, there is a gap between the first electrode layer and the second electrode layer, the gap surrounds the first electrode layer, and at least a portion of the third insulating layer fills the gap.

[0014] Preferably, when the first electrode layer and the second electrode layer are arranged on different planes perpendicular to the stacking direction, the fourth insulating layer is arranged between the first electrode layer and the second electrode layer.

[0015] Preferably, it also includes: a first lead pattern layer and a second lead pattern layer, wherein the first lead pattern layer is electrically connected to the first electrode layer, the second lead pattern layer is electrically connected to the second electrode layer, and at least part of the first lead pattern layer and at least part of the second lead pattern layer are arranged on different planes perpendicular to the stacking direction.

[0016] The present invention also provides an ultrasonic probe, comprising: an ultrasonic transducer array, arranged in a shell, the ultrasonic transducer array comprising a plurality of transducers, the plurality of transducers being arranged in an array along an arrangement direction, each transducer comprising a plurality of ultrasonic oscillator elements, each ultrasonic oscillator element comprising: a substrate; a grounding layer, arranged on the substrate; a first insulating layer, wherein the grounding layer is arranged between the substrate and the first insulating layer; a second insulating layer, wherein the first insulating layer is arranged between the grounding layer and the second insulating layer; a first electrode layer, for receiving a DC voltage, wherein the second insulating layer is arranged on the first insulating layer; an insulating layer and the first electrode layer; a third insulating layer, wherein the first electrode layer is disposed between the second insulating layer and the third insulating layer; and a second electrode layer, for receiving an AC signal, and disposed between the second insulating layer and the third insulating layer; wherein before the ultrasonic oscillator element is driven, there is a cavity between the first insulating layer and the second insulating layer; wherein when the ultrasonic oscillator element is driven, the first electrode layer receives the DC voltage to at least drive the second insulating layer to contract toward the cavity, and the second electrode layer receives the AC signal to at least drive the third insulating layer to vibrate.

[0017] Preferably, the method further comprises: a fourth insulating layer disposed between the first electrode layer and the second electrode layer.

[0018] Preferably, at least one of the first electrode layer and the cavity is square or circular.

[0019] Preferably, the device further comprises: a first lead pattern layer, which is disposed between the third insulating layer and the second insulating layer, the first lead pattern layer is electrically connected to the first electrode layer, and the first electrode layer receives the DC voltage via the first lead pattern layer.

[0020] Preferably, the pattern of the first lead pattern layer is linear or cross-shaped.

[0021] Preferably, the first electrode layer and the second electrode layer are arranged on the same plane perpendicular to a stacking direction, and the stacking direction is a connection direction of the second insulating layer and the third insulating layer.

[0022] Preferably, the first electrode layer and the second electrode layer are arranged on a plane perpendicular to a stacking direction, and the stacking direction is a connection direction of the second insulating layer and the third insulating layer.

[0023] Preferably, when the first electrode layer and the second electrode layer are arranged on the same plane perpendicular to the stacking direction, there is a gap between the first electrode layer and the second electrode layer, the gap surrounds the first electrode layer, and at least a portion of the third insulating layer fills the gap.

[0024] Preferably, when the first electrode layer and the second electrode layer are arranged on different planes perpendicular to the stacking direction, the fourth insulating layer is arranged between the first electrode layer and the second electrode layer.

[0025] Preferably, it also includes: a first lead pattern layer and a second lead pattern layer, wherein the first lead pattern layer is electrically connected to the first electrode layer, the second lead pattern layer is electrically connected to the second electrode layer, and at least part of the first lead pattern layer and at least part of the second lead pattern layer are arranged on different planes perpendicular to the stacking direction.

[0026] Compared with the prior art, the ultrasonic oscillator element and the ultrasonic probe provided by the embodiments of the present invention, when the ultrasonic oscillator element is driven, the first electrode layer receives a DC voltage to at least drive the second insulating layer to contract toward the cavity, and the second electrode layer receives an AC signal to at least drive the third insulating layer to vibrate. Therefore, the design method of separately setting the first electrode layer receiving the DC voltage and the second electrode layer receiving the AC signal in the ultrasonic oscillator element does not need to use a bias device to drive the ultrasonic oscillator element, which can not only further reduce the system volume, but also reduce the voltage value of the DC voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic diagram of an ultrasonic probe according to an embodiment of the present invention.

[0028] Figure 2 It is a schematic diagram showing that an ultrasonic transducer array in an ultrasonic probe according to an embodiment of the present invention is electrically connected to a first electrical connection strip and a second electrical connection strip.

[0029] Figure 3 is a schematic diagram of an ultrasonic transducer array in an ultrasonic probe according to an embodiment of the present invention.

[0030] Figure 4A FIG. 4 is a cross-sectional schematic diagram of an ultrasonic oscillator element according to a first embodiment of the present invention.

[0031] Figure 4B FIG. 4 is a cross-sectional schematic diagram of another example of the ultrasonic oscillator element according to the first embodiment of the present invention.

[0032] FIG. 5A to FIG. 5J Indicated Figure 4A Schematic diagram of the manufacturing process of ultrasonic oscillator components.

[0033] Figure 6 Indicated Figure 4A Schematic diagram of an ultrasonic oscillator element being driven to vibrate.

[0034] Fig. 7A FIG. 4 is a schematic top view of an ultrasonic oscillator element according to a second embodiment of the present invention.

[0035] Figure 7B FIG. 4 is a cross-sectional schematic diagram of an ultrasonic oscillator element according to a second embodiment of the present invention.

[0036] FIG. 8A to FIG. 8H Indicated Figure 7B Schematic diagram of the manufacturing process of ultrasonic oscillator components.

[0037] Fig. 9 Indicated Figure 7B Schematic diagram of an ultrasonic oscillator element being driven to vibrate.

[0038] Fig.10 FIG. 4 is a schematic top view of an ultrasonic oscillator element according to a third embodiment of the present invention.

[0039] Fig.11A and Fig. 11B FIG. 4 is a schematic diagram of the first electrode layer relative to the cavity in the ultrasonic oscillator element according to the present invention.

[0040] Fig.12 FIG. 4 is a schematic diagram of transducers in an ultrasonic transducer array of an ultrasonic probe according to another embodiment of the present invention.

[0041] Fig.13 FIG. 4 is a schematic diagram of transducers in an ultrasonic transducer array of an ultrasonic probe according to another embodiment of the present invention.

[0042] Fig.14 FIG. 4 is a schematic diagram of transducers in an ultrasonic transducer array of an ultrasonic probe according to yet another embodiment of the present invention. DETAILED DESCRIPTION

[0043] In order to provide a further understanding of the purpose, structure, features and functions of the present invention, the following detailed description is given in conjunction with the embodiments.

[0044] Figure 1 is a schematic diagram of an ultrasonic probe according to an embodiment of the present invention. Figure 1One embodiment of the present invention provides an ultrasonic probe 1, which includes a housing 20, an ultrasonic transducer array 10, and a control circuit 30. The ultrasonic transducer array 10 and the control circuit 30 are disposed in the housing 20. The control circuit 30 is electrically connected to the ultrasonic transducer array 10 to control the ultrasonic transducer array 10 to receive and / or send signals.

[0045] In this embodiment, the control circuit 30 includes, for example, a microcontroller unit (MCU), a central processing unit (CPU), a microprocessor (microprocessor), a digital signal processor (DSP), a programmable controller, a programmable logic device (PLD), a multiplexer (MUX), a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or other similar devices or a combination of these devices, and the present invention is not limited. In addition, in one embodiment, each function of the control circuit 30 can be implemented as a plurality of program codes. These program codes will be stored in a memory, and the control circuit 30 will execute these program codes. Alternatively, in one embodiment, each function of the control circuit 30 can be implemented as one or more circuits. The present invention is not limited to implementing each function of the control circuit 30 in a software or hardware manner.

[0046] Figure 2 It is a schematic diagram showing that an ultrasonic transducer array in an ultrasonic probe according to an embodiment of the present invention is electrically connected to a first electrical connection strip and a second electrical connection strip. Figure 3 is a schematic diagram of an ultrasonic transducer array in an ultrasonic probe according to an embodiment of the present invention. Figure 2 and Figure 3 In this embodiment, the ultrasonic transducer array 10 includes a plurality of transducers 12. The transducers 12 are arranged in an array along an arrangement direction D. Each transducer 12 includes a plurality of ultrasonic oscillator elements 100. The plurality of transducers 12 may be arranged in a one-dimensional or two-dimensional array. Each transducer 12 may be disposed on a plane or a curved surface, and the ultrasonic oscillator elements 100 in each transducer 12 may be arranged in a one-dimensional array or a two-dimensional matrix.

[0047] Figure 4A FIG. 4 is a cross-sectional schematic diagram of an ultrasonic oscillator element according to a first embodiment of the present invention. Figure 4Bis a cross-sectional schematic diagram of another example of the ultrasonic oscillator element according to the first embodiment of the present invention. Figure 4A and Figure 4B In this embodiment, each ultrasonic oscillator element 100 includes a substrate 110, a ground layer 120, a first insulating layer 130, a second insulating layer 140, a first electrode layer 150, a third insulating layer 180, and a second electrode layer 170. The material of the substrate 110 may be glass, silicon (Si), or silicon dioxide (SiO2); the material of the ground layer 120, the first electrode layer 150, or the second electrode layer 170 may be aluminum (Al), indium tin oxide (ITO), copper (Cu), silver (Ag), or other conductive materials; the material of the first insulating layer 130, the second insulating layer 140, or the third insulating layer 180 may be silicon nitride, silicon oxide, or other protective insulating materials, but the present invention is not limited to the materials of each layer of the ultrasonic oscillator element 100. In the above embodiment, the grounding layer 120 can be directly connected in series with the grounding layers 120 of multiple ultrasonic oscillator elements 100 at the same time when the grounding layer 120 is prepared for the purpose of process convenience or electrical performance. Figure 4B shown.

[0048] In this embodiment, the ground layer 120 is disposed on the substrate 110 and disposed between the substrate 110 and the first insulating layer 130. The first insulating layer 130 is disposed between the ground layer 120 and the second insulating layer 140. The second insulating layer 140 is disposed between the first insulating layer 130 and the first electrode 150 layer. The first electrode layer 150 is disposed between the second insulating layer 140 and the third insulating layer 180. The second electrode layer 170 is disposed between the second insulating layer 140 and the third insulating layer 180. The first electrode layer 150 is used to receive a DC voltage V. The second electrode layer 170 is used to receive an AC signal S.

[0049] In this embodiment, the ultrasonic oscillator element 100 further includes a fourth insulating layer 160 disposed between the first electrode layer 150 and the second electrode layer 170. The material of the fourth insulating layer 160 may be silicon nitride, silicon oxide or other insulating materials for protection, but the present invention is not limited to the material of the fourth insulating layer 160.

[0050] In this embodiment, the ultrasonic oscillator device 100 further includes a first wiring pattern layer 190 disposed between the third insulating layer 180 and the second insulating layer 140. The first wiring pattern layer 190 is electrically connected to the first electrode layer 150, and the first electrode layer 150 receives the DC voltage V through the first wiring pattern layer 190.

[0051] In the present embodiment, the ultrasonic oscillator element further includes a second lead pattern layer 200 disposed between the second insulating layer 140 and the third insulating layer 180. The second lead pattern layer 200 is electrically connected to the second electrode layer 170, and the second electrode layer 170 receives the AC signal S through the second lead pattern layer 200. At least part of the first lead pattern layer 190 and at least part of the second lead pattern layer 200 are disposed on different planes perpendicular to the stacking direction SD. The stacking direction SD is the connection direction of the second insulating layer 140 and the third insulating layer 180.

[0052] In the present embodiment, the first electrode layer 150 and the second electrode layer 170 are (respectively) disposed on a plane perpendicular to the stacking direction SD. When the first electrode layer 150 and the second electrode layer 170 are disposed on different planes perpendicular to the stacking direction SD, the fourth insulating layer 180 is disposed between the first electrode layer 150 and the second electrode layer 170.

[0053] FIG. 5A to FIG. 5J Indicated Figure 4A Schematic diagram of the production process of ultrasonic oscillator components. Please refer to FIG. 4A to FIG. 5J In this embodiment, the method for manufacturing the ultrasonic oscillator element 100 includes the following steps: forming a grounding layer 120 on the substrate 110, such as FIG. 5A to FIG. 5B A first insulating layer 130 is formed on the ground layer 120, as shown. Figure 5C A sacrificial layer SL is formed on the first insulating layer 130, as shown. Figure 5D A second insulating layer 140 is formed on the sacrificial layer SL, as shown. Figure 5E A first electrode layer 150 is formed on the second insulating layer 140, as shown. Fig. 5F A fourth insulating layer 160 is formed on the first electrode layer 150, as shown. Figure 5G The sacrificial layer SL is removed to form a cavity CA between the first insulating layer 130 and the second insulating layer 140. Figure 5H Next, a second electrode layer 170 is formed on the fourth insulating layer 160, as shown in FIG. Fig.5I A third insulating layer 180 is formed on the second electrode layer 170 to form the ultrasonic oscillator element 100. Figure 5J shown.

[0054] Please refer to Figure 2 and Figure 4AIn this embodiment, the ultrasonic probe 1 further includes a plurality of first electrical connection strips ES1 and a plurality of second electrical connection strips ES2. Each first electrical connection strip ES1 is electrically connected to the first electrode layer 150 of one of the ultrasonic oscillator elements 100 in each transducer 12, so that the first electrode layer 150 receives a DC voltage V through the first electrical connection strip ES1. Each second electrical connection strip ES2 is electrically connected to the second electrode layer 170 of one of the ultrasonic oscillator elements 100 in each transducer 12, so that the second electrode layer 170 receives an AC signal S through the second electrical connection strip ES2. The first electrical connection strips ES1 and the second electrical connection strips ES2 are alternately arranged, but the present invention is not limited thereto.

[0055] Figure 6 Indicated Figure 4A Schematic diagram of the ultrasonic oscillator element being driven to generate vibration. In this embodiment, before the ultrasonic oscillator element 100 is driven, there is a cavity CA between the first insulating layer 130 and the second insulating layer 140. When the ultrasonic oscillator element 100 is driven, the first electrode layer 150 receives a DC voltage V to at least drive the second insulating layer 140 to shrink toward the cavity CA. When the second insulating layer 140 shrinks toward the cavity CA, part of the second insulating layer 140 may touch the first insulating layer 130, or the second insulating layer 140 and the first insulating layer 130 still maintain a certain distance, but the present invention is not limited thereto. The second electrode layer 170 receives an AC signal S to at least drive the third insulating layer 180 to vibrate, or the vibration of the second electrode layer 170 itself due to the AC signal S continuously drives the third insulating layer 180 to vibrate, thereby generating sound waves. In addition, the second electrode layer 170 and the third insulating layer 180 can also be used to receive sound wave signals from the outside, thereby generating vibrations and corresponding electrical signals.

[0056] In this embodiment, at least one of the first electrode layer 150 and the cavity CA is in a square or circular shape. In another embodiment, at least one of the first electrode layer 150 and the cavity CA may be in a polygonal shape.

[0057] Based on the above, in one embodiment of the present invention, the ultrasonic probe 1 or the ultrasonic oscillator element 100 includes a substrate 110, a ground layer 120, a first insulating layer 130, a second insulating layer 140, a first electrode layer 150, a third insulating layer 180, and a second electrode layer 170. The first electrode layer 150 is used to receive a DC voltage V. The second electrode layer 170 is used to receive an AC signal S. When the ultrasonic oscillator element 100 is driven, the first electrode layer 150 receives the DC voltage V to at least drive the second insulating layer 140 to contract toward the cavity CA, and the second electrode layer 170 receives the AC signal S to at least drive the third insulating layer 180 to vibrate. Therefore, the design method of separately arranging the first electrode layer 150 receiving the DC voltage V and the second electrode layer 170 receiving the AC signal S in the ultrasonic oscillator element 100 does not need to use a bias device to drive the ultrasonic oscillator element 100, which can not only further reduce the system volume, but also reduce the voltage value of the DC voltage V. Moreover, since the system volume can be reduced, the application range is wider, for example, it can be applied to a handheld ultrasonic probe. Furthermore, the transducer 12 or ultrasonic oscillator element 100 in the ultrasonic probe 1 can be completed by a panel process, a micro-electromechanical process or a semiconductor process, thereby reducing the manufacturing time and cost and facilitating mass production.

[0058] Fig. 7A FIG. 4 is a schematic top view of an ultrasonic oscillator element according to a second embodiment of the present invention. Figure 7B is a cross-sectional schematic diagram of an ultrasonic oscillator element according to a second embodiment of the present invention. Fig. 7A and Figure 7B , ultrasonic oscillator element 100A and Figure 4A The present invention is similar to the ultrasonic oscillator element 100 of the present invention, and the main difference is that: in this embodiment, the first electrode layer 150, the second electrode layer 170 and the first lead pattern layer 190A are arranged on the same plane perpendicular to the stacking direction SD. Moreover, when the first electrode layer 150 and the second electrode layer 170 are arranged on the same plane perpendicular to the stacking direction SD, there is a gap G between the first electrode layer 150 and the second electrode layer 170. The gap G surrounds the first electrode layer 150, and at least a portion of the third insulating layer 180 is filled in the gap G.

[0059] In this embodiment, the pattern of the first lead pattern layer 190A is linear or cross-shaped, and in each transducer 12, the ultrasonic oscillator elements 100A are arranged in a one-dimensional array (eg, Figure 3 shown).

[0060] FIG. 8A to FIG. 8H Indicated Figure 7B Schematic diagram of the production process of ultrasonic oscillator components. Please refer to FIG. 7B to FIG. 8GIn this embodiment, the method for manufacturing the ultrasonic oscillator element 100A includes the following steps: forming a grounding layer 120 on the substrate 110, such as FIG. 8A to FIG. 8B A first insulating layer 130 is formed on the ground layer 120, as shown. Figure 8C A sacrificial layer SL is formed on the first insulating layer 130, as shown. Fig.8D A second insulating layer 140 is formed on the sacrificial layer SL, as shown. Fig. 8E A (patterned) first electrode layer 150 and a second electrode layer 170 are formed on the second insulating layer 140, as shown in FIG. Figure 8F A third insulating layer 180A is formed on the first electrode layer 150 and the second electrode layer 170, as shown. Figure 8G The sacrificial layer SL is removed to form the ultrasonic oscillator element 100A, as shown in FIG. Figure 8H shown.

[0061] Fig. 9 Indicated Figure 7B Schematic diagram of the ultrasonic oscillator element being driven to produce vibration. Please refer to Fig. 9 The first electrode layer 150 of the ultrasonic oscillator element 100A receives a DC voltage V to at least drive the second insulating layer 140 to contract toward the cavity CA, and the second electrode layer 170 receives an AC signal S to at least drive the third insulating layer 180 to vibrate. The driving method is similar to Figure 6 The driving method of the ultrasonic oscillator element 100 is not described in detail here. In addition, since the first electrode layer 150 and the second electrode layer 170 are arranged on the same plane perpendicular to the stacking direction SD, when the ultrasonic oscillator element 100A is manufactured by a panel process, a micro-electromechanical process or a semiconductor process, the first electrode layer 150 and the second electrode layer 170 can be manufactured in one mask process, such as Figure 8F As shown, the overall manufacturing time and production cost can be further reduced.

[0062] Fig.10 is a top view schematic diagram of an ultrasonic oscillator element according to a third embodiment of the present invention. Fig.10 , ultrasonic oscillator element 100B and Fig. 7A The ultrasonic oscillator element 100A is similar to the ultrasonic oscillator element 100A of the embodiment, and the main difference is that: in this embodiment, the pattern of the first lead pattern layer 190B is linear or cross-shaped, and in each transducer 12, the ultrasonic oscillator elements 100 are arranged in a two-dimensional matrix (such as Fig.13 shown).

[0063] Fig.11A and Fig. 11B is a schematic diagram of the first electrode layer relative to the cavity in the ultrasonic oscillator element according to the present invention. Fig.11A and Fig. 11B In the ultrasonic oscillator elements 100C and 100D, at least one of the first electrode layer 150 and the cavity CA is in a square shape (e.g. Fig.11A ) or round (such as Fig. 11B ), and the first electrode layer 150 is disposed at the center of the cavity CA.

[0064] Fig.12 FIG. 1 is a schematic diagram of a transducer in an ultrasonic transducer array of an ultrasonic probe according to another embodiment of the present invention. Fig.12 , the transducer 12' and Figure 3 The main difference is that in this embodiment, in each transducer 12', the ultrasonic oscillator elements 100 are arranged in a 2×n or n×2 matrix, where n≥2.

[0065] Fig.13 FIG. 1 is a schematic diagram of a transducer in an ultrasonic transducer array of an ultrasonic probe according to another embodiment of the present invention. Fig.13 , transducer 12" with Figure 3 The transducer 12 or Fig.12 The main difference is that in this embodiment, in each transducer 12 ″, the ultrasonic oscillator elements 100 are arranged in an n×m matrix, where m≥2 and n≥2.

[0066] Fig.14 FIG. 1 is a schematic diagram of a transducer in an ultrasonic transducer array of an ultrasonic probe according to another embodiment of the present invention. Fig.14 , transducer 12"' and Figure 3 The transducer 12, Fig.12 The transducer 12' or Fig.13 The transducer 12" is similar to the transducer 12" in the embodiment, the main difference is that the ultrasonic oscillator element 100 is arranged on a curved surface or the transducer 12"' is a curved surface.

[0067] In summary, in an ultrasonic probe or ultrasonic oscillator element of an embodiment of the present invention, the ultrasonic oscillator element includes a substrate, a ground layer, a first insulating layer, a second insulating layer, a first electrode layer, a third insulating layer and a second electrode layer. The ground layer is disposed on the substrate; the ground layer is disposed between the substrate and the first insulating layer; the first insulating layer is disposed between the ground layer and the second insulating layer; the second insulating layer is disposed between the first insulating layer and the first electrode layer; the first electrode layer is disposed between the second insulating layer and the third insulating layer; the second electrode layer is disposed between the second insulating layer and the third insulating layer; before the ultrasonic oscillator element is driven, there is a cavity between the first insulating layer and the second insulating layer; the first electrode layer is used to receive a DC voltage, and the second electrode layer is used to receive an AC signal. When the ultrasonic oscillator element is driven, the first electrode layer receives a DC voltage to at least drive the second insulating layer to contract toward the cavity, and the second electrode layer receives an AC signal to at least drive the third insulating layer to vibrate. Therefore, the design method of separately setting the first electrode layer receiving the DC voltage and the second electrode layer receiving the AC signal in the ultrasonic oscillator element does not need to use a bias device to drive the ultrasonic oscillator element. In addition to further reducing the system volume, the voltage value of the DC voltage can also be reduced. Moreover, since the system volume can be reduced, the application range is wider, for example, it can be applied to handheld ultrasonic probes. Furthermore, the transducer or ultrasonic oscillator element in the ultrasonic probe can be completed using a semiconductor process, thereby reducing the manufacturing time and cost, and facilitating mass production.

[0068] Although the present invention is described in conjunction with the accompanying drawings, the embodiments disclosed in the drawings are intended to exemplify the preferred embodiments of the present invention and should not be construed as limiting the present invention. In order to clearly describe the required components, the proportions in the schematic drawings do not represent the proportional relationship of the actual components.

[0069] The present invention has been described by the above-mentioned relevant embodiments, however, the above-mentioned embodiments are only examples for implementing the present invention. It must be pointed out that the disclosed embodiments do not limit the scope of the present invention. On the contrary, changes and modifications made without departing from the spirit and scope of the present invention are all within the scope of patent protection of the present invention.

Claims

1. An ultrasonic oscillator element, characterized in that: include: substrate; A ground layer is disposed on the substrate; a first insulating layer, wherein the ground layer is disposed between the substrate and the first insulating layer; a second insulating layer, wherein the first insulating layer is disposed between the ground layer and the second insulating layer; A first electrode layer for receiving a DC voltage, wherein the second insulating layer is disposed between the first insulating layer and the first electrode layer; a third insulating layer, wherein the first electrode layer is disposed between the second insulating layer and the third insulating layer; as well as The second electrode layer is used for receiving an AC signal and is disposed between the second insulating layer and the third insulating layer; Before the ultrasonic oscillator element is driven, a cavity is provided between the first insulating layer and the second insulating layer; When the ultrasonic oscillator element is driven, the first electrode layer receives the DC voltage to at least drive the second insulating layer to contract toward the cavity, and the second electrode layer receives the AC signal to at least drive the third insulating layer to vibrate.

2. The ultrasonic oscillator element according to claim 1, wherein: Also includes: The fourth insulating layer is disposed between the first electrode layer and the second electrode layer.

3. The ultrasonic oscillator element according to claim 1, wherein: At least one of the first electrode layer and the cavity is in a square or circular shape.

4. The ultrasonic oscillator element according to claim 1, wherein: Also includes: The first lead pattern layer is disposed between the third insulating layer and the second insulating layer. The first lead pattern layer is electrically connected to the first electrode layer. The first electrode layer receives the DC voltage through the first lead pattern layer.

5. The ultrasonic oscillator element according to claim 4, characterized in that: The pattern of the first lead pattern layer is in a linear shape or a cross shape.

6. The ultrasonic oscillator element according to claim 1, wherein: The first electrode layer and the second electrode layer are arranged on the same plane perpendicular to a stacking direction, and the stacking direction is a connection direction between the second insulating layer and the third insulating layer.

7. The ultrasonic oscillator element according to claim 1, wherein: The first electrode layer and the second electrode layer are arranged on a plane perpendicular to a stacking direction, and the stacking direction is a connection direction of the second insulating layer and the third insulating layer.

8. The ultrasonic oscillator element according to claim 7, characterized in that: When the first electrode layer and the second electrode layer are arranged on the same plane perpendicular to the stacking direction, there is a gap between the first electrode layer and the second electrode layer, the gap surrounds the first electrode layer, and at least part of the third insulating layer fills the gap.

9. The ultrasonic oscillator element according to claim 7, wherein: When the first electrode layer and the second electrode layer are arranged on different planes perpendicular to the stacking direction, the fourth insulating layer is arranged between the first electrode layer and the second electrode layer.

10. The ultrasonic oscillator element according to claim 9, wherein: Also includes: A first lead pattern layer and a second lead pattern layer, wherein the first lead pattern layer is electrically connected to the first electrode layer, the second lead pattern layer is electrically connected to the second electrode layer, and at least a portion of the first lead pattern layer and at least a portion of the second lead pattern layer are arranged on different planes perpendicular to the stacking direction.

11. An ultrasonic probe, characterized in that: include: An ultrasonic transducer array is disposed in the housing, the ultrasonic transducer array comprising a plurality of transducers arranged in an array along an arrangement direction, each transducer comprising a plurality of ultrasonic oscillator elements according to any one of claims 1 to 10; as well as The control circuit is electrically connected to the ultrasonic transducer array and is used for controlling the ultrasonic transducer array to receive and / or send signals.

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