Plasma cleaning device and cleaning method

Abstract

The invention discloses a plasma cleaning device and method. The plasma cleaning device comprises a base, a workpiece carrying plate and a protective cover, a positive electrode plate is arranged on the upper end face of the base, a ceramic plate is arranged on the upper end face of the positive electrode plate, a positioning piece is arranged on the upper end face of the ceramic plate, and a vacuumizing pipeline is arranged on the base; the workpiece carrier plate is provided with a plurality of positioning grooves for loading substrates to be cleaned, and the distance between the workpiece carrier plate and the ceramic plate is smaller than or equal to 0.05 mm; the protective cover is connected with a lifting mechanism and provided with a negative electrode plate, the negative electrode plate is located above the positive electrode plate, and the positive electrode plate and the negative electrode plate are located in the closed space. A ceramic plate is arranged on the positive electrode plate for covering, and a discharge mode is changed into a dielectric discharge mode, so that a golden finger of the substrate is prevented from being polluted by a tin element; according to the method, oxygen is input firstly to clean the surface of the substrate in a high-efficiency chemical reaction mode, then argon is introduced, the surface of the substrate is physically impacted, and surface oxides are thoroughly removed, so that the cleaning effect is better.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma cleaning equipment, and in particular to a plasma cleaning device and a cleaning method. Background Art

[0002] With the development of modern electronic manufacturing technology, Flip Chip Bond packaging technology has been widely used. Some organic matter or other pollutants remain on the substrate during the production process of the front-end process, and the oxygen elements under the gold-plated layer of the gold finger of the substrate will also move to the surface during the baking process. The above pollutants need to be removed, and the current cleaning method is plasma cleaning technology. The principle of plasma cleaning is to apply radio frequency voltage to a set of electrodes, and the gas in the area is excited by the high-frequency alternating electric field formed between the electrodes to form plasma. The active plasma physically impacts or chemically reacts with the object to be cleaned, turning the surface material of the object to be cleaned into particles and gaseous substances, and then exhausts them after vacuuming to achieve the cleaning purpose.

[0003] At present, in the production process of camera modules, the substrate is cleaned by plasma before being put into the flip chip, mainly using argon gas to clean it by physical impact. The current ion cleaning device has the following disadvantages: the cleaning process will knock out the tin of the components on the substrate and attach it to the surface of the gold finger, affecting the welding effect of the FCB and easily causing the gold ball to delaminate. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present invention provides a plasma cleaning device and a cleaning method, which can effectively improve the cleaning effect, avoid knocking out the tin of components, and prevent the subsequent gold ball delamination phenomenon.

[0005] According to an embodiment of the present invention, a plasma cleaning device is provided, including a base, a workpiece carrier and a shield, the upper end surface of the base is provided with a positive electrode plate, the upper end surface of the positive electrode plate is provided with a ceramic plate, the upper end surface of the ceramic plate is provided with a positioning piece, the base is provided with a vacuum pipeline, and the port of the vacuum pipeline is provided on the upper end surface of the ceramic plate; the workpiece carrier is provided with a plurality of positioning grooves for loading substrates to be cleaned, the workpiece carrier is connected to the positioning piece, and the distance between the workpiece carrier and the ceramic plate is less than or equal to 0.05 mm; the shield is located above the base, the shield is connected to a lifting mechanism so that the shield can be covered on the base and form a closed space, the shield is provided with a negative electrode plate, the negative electrode plate is located above the positive electrode plate, the positive electrode plate and the negative electrode plate are located in the closed space, the shield is provided with a first air inlet pipe and a second air inlet pipe, the first air inlet pipe and the second air inlet pipe are connected to the closed space. The plasma cleaning device of the embodiment of the present invention has at least the following beneficial effects: The positive electrode plate of the plasma cleaning device is located at the bottom. The positive electrode plate is the discharge end. A ceramic plate is provided on the positive electrode plate as a cover. Changing the discharge mode to a dielectric discharge mode can reduce the impact of excessive energy on the substrate, effectively avoid the generation of tin elements in the plasma cleaning process to contaminate the gold fingers of the substrate, and prevent the gold ball stratification phenomenon in the subsequent FCB welding; the workpiece carrier is close to the positive electrode plate below, and the distance is less than 0.05 mm. Plasma cleaning can better act on the gold finger surface of the substrate and prevent excessive energy from acting on the components; the shield is provided with a first air inlet pipe and a second air inlet pipe. Oxygen is first input to clean the surface of the substrate with a high-efficiency chemical reaction, and then argon is introduced to physically impact the surface of the substrate to completely remove the surface oxide, which can achieve a better cleaning effect. According to some embodiments of the first aspect of the present invention, the ceramic plate covers a discharge region of the positive electrode plate.

[0006] According to some embodiments of the first aspect of the present invention, the positioning member is two symmetrically arranged slide rails, and the workpiece carrier is placed on the slide rails and can move along the slide rails.

[0007] According to some embodiments of the first aspect of the present invention, side plates are provided on the outer sides of the two slide rails, and the side walls of the workpiece carrier plate abut against the side plates.

[0008] According to some embodiments of the first aspect of the present invention, the cross-section of the positioning groove is set to be rectangular, and avoidance holes are set at the four corners of the positioning groove, and the bottom wall of the positioning groove is set with a through hole penetrating the workpiece carrier.

[0009] According to some embodiments of the first aspect of the present invention, a display screen is provided on the outer wall of the shield, and the display screen is electrically connected to a controller, and the controller is electrically connected to the lifting mechanism, the positive electrode plate, and the negative electrode plate.

[0010] According to some embodiments of the first aspect of the present invention, the lifting mechanism includes a mounting plate and a plurality of cylinders, wherein the plurality of cylinders are fixed to a bottom surface of the mounting plate and are distributed circumferentially.

[0011] A cleaning method according to an embodiment of the second aspect of the present invention is applied to the plasma cleaning device described in the embodiment of the first aspect, comprising the following steps: S100, placing the substrate to be cleaned in the positioning groove of the workpiece carrier; S200, the lifting mechanism drives the shield to descend, the shield is arranged on the base and forms a closed space, and the closed space is evacuated through a vacuum pipeline, and the vacuum degree is less than 26 Pa; S300, oxygen is introduced into the enclosed space through a first air inlet pipe, and the positive electrode plate and the negative electrode plate are energized so that the oxygen generates plasma to perform a first cleaning on the substrate; S400, inputting argon gas into the enclosed space through a second air inlet pipe, energizing the positive electrode plate and the negative electrode plate so that the argon gas generates plasma, and performing a second cleaning on the substrate; S500, breaking the vacuum of the enclosed space, the lifting mechanism driving the shield to rise, and taking out the cleaned substrate.

[0012] According to some embodiments of the second aspect of the present invention, in step S300, the flow rate of oxygen is 4 to 6 SCCM, and the power-on time of the positive electrode plate and the negative electrode plate is 9 to 11 seconds.

[0013] According to some embodiments of the second aspect of the present invention, in the step S400, the flow rate of argon gas is 4 to 6 SCCM, and the power-on time of the positive electrode plate and the negative electrode plate is 19 to 21 seconds.

[0014] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which: Figure 1 FIG. 1 is a schematic diagram of the structure of a plasma cleaning device according to an embodiment of the present invention. Figure 1 ; Figure 2 FIG. 1 is a schematic diagram of the structure of a plasma cleaning device according to an embodiment of the present invention. Figure 2 ; Figure 3 It is a left side view of the plasma cleaning device according to the embodiment of the present invention.

[0016] Description of reference numerals: Base 100, positive electrode plate 110, ceramic plate 120, positioning member 130, side plate 131, vacuum line 140, workpiece carrier plate 200, positioning groove 210, shield 300, first air inlet pipe 301, second air inlet pipe 302, lifting mechanism 310, mounting plate 311, cylinder 312, negative electrode plate 320, display screen 330. DETAILED DESCRIPTION

[0017] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0018] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0019] In the description of the present invention, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood as not including the number itself, and "above", "below", "within" etc. are understood as including the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0020] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0021] Reference Figures 1 to 3 The present invention proposes a plasma cleaning device, which can effectively improve the cleaning effect and reduce the gold ball delamination phenomenon in the subsequent FCB (Flip Chip Bonding) welding process.

[0022] The plasma cleaning device of the present invention mainly includes a base 100, a workpiece carrier plate 200 and a shield 300. The base 100 is the supporting part of the entire device, and a positive electrode plate 110 is arranged on its upper end surface. The positive electrode plate 110 serves as a discharge end and plays a key role in the plasma cleaning process. A ceramic plate 120 is arranged on the upper end surface of the positive electrode plate 110. The main function of the ceramic plate 120 is to cover the discharge area of ​​the positive electrode plate 110 and change the discharge mode from direct air discharge to dielectric discharge mode. Compared with the air discharge mode, the high-energy electrons in the dielectric discharge mode are weak, which can effectively control the discharge energy and reduce the influence of excessive energy on the substrate. Due to the dielectric barrier, the tip discharge phenomenon will not occur, which prevents the tin of the components of the substrate from being knocked out due to excessive energy and adhering to the gold finger surface of the substrate. A positioning member 130 is arranged on the upper end surface of the ceramic plate 120, and the positioning member 130 is used to connect the workpiece carrier plate 200 to ensure that the workpiece carrier plate 200 can be stably placed above the ceramic plate 120. The design of the positioning member 130 can be adjusted according to actual needs, such as by using a slot, a threaded connection, etc., to ensure the accuracy and stability of the workpiece carrier 200.

[0023] The base 100 is also provided with a vacuum line 140, whose port is arranged on the upper end surface of the ceramic plate 120. The function of the vacuum line 140 is to perform vacuum treatment before plasma cleaning to remove air and impurities, thereby creating favorable conditions for subsequent plasma cleaning.

[0024] The workpiece carrier 200 is used to load the substrate to be cleaned, and a plurality of positioning grooves 210 are provided on the workpiece carrier 200 to ensure that the substrate can be stably placed in the positioning grooves 210. The positioning grooves 210 can be designed according to the shape and size of the substrate to ensure the stability and accuracy of the substrate during the cleaning process. The workpiece carrier 200 is placed on the positioning member 130, and the distance between the workpiece carrier 200 and the ceramic plate 120 is less than or equal to 0.05 mm, so that plasma cleaning can better act on the substrate, while preventing excessive energy from acting on components, ensuring the cleaning effect and the safety of components.

[0025] The shield 300 is located above the base 100. The shield 300 is connected to a lifting mechanism 310 to achieve lifting. The lifting mechanism 310 can be driven by a cylinder, an electric push rod, etc. to ensure that the shield 300 can be stably covered on the base 100 and form a closed space. The main function of the shield 300 is to prevent the plasma generated during the plasma cleaning process from spreading outward and protect the operator from being harmed by the plasma. The inner wall of the shield 300 is provided with a negative electrode plate 320, and the negative electrode plate 320 is located above the positive electrode plate 110. Specifically, the negative electrode plate 320 can be located directly above the positive electrode plate 110, and an electric field is formed between the positive electrode plate 110 and the negative electrode plate 320. When a radio frequency voltage is applied, a high-frequency alternating electric field is generated in the positive electrode plate 110 and the negative electrode plate 320, and the gas in the closed space forms a plasma under the high-frequency alternating electric field.

[0026] The shield 300 is also provided with a first air inlet pipe 301 and a second air inlet pipe 302, both of which are connected to the closed space. According to the cleaning requirements of the substrate, the first air inlet pipe 301 is used to input oxygen, and the second air inlet pipe 302 is used to input argon.

[0027] When the plasma cleaning device of the present invention is used for cleaning, the shield 300 is first placed on the base 100 through the lifting mechanism 310 to form a closed space. Then, the inside of the device is vacuumed through the vacuum line 140 to remove the air and impurities inside the device. Next, oxygen is input into the closed space through the first air inlet pipe 301, and the oxygen content reaches the set standard. A radio frequency voltage is applied to the positive electrode plate 110 and the negative electrode plate 320 to generate plasma, and the plasma cleans the surface of the substrate. Since oxygen has the risk of oxidizing the gold finger, the cleaning time must be accurately controlled, and the pollutants generated by the cleaning are removed through the vacuum tube. Then, argon gas is input into the closed space through the second air inlet pipe 302, and the argon content reaches the set standard. A radio frequency voltage is applied to the positive electrode plate 110 and the negative electrode plate 320 to generate plasma, and the plasma physically impacts the surface of the substrate to remove the surface oxide. Finally, nitrogen gas is input through the first air inlet pipe 301 or the second air inlet pipe 302 to break the vacuum, and the lifting mechanism 310 drives the shield 300 to rise, and the cleaned substrate can be taken away.

[0028] The plasma cleaning device of the present invention has the following technical effects: 1. Dielectric discharge mode: By changing the discharge mode to the dielectric discharge mode through the ceramic plate 120, the discharge energy can be more effectively controlled, the influence of excessive energy on the substrate can be reduced, and the tin in the components can be prevented from contaminating the gold fingers of the substrate, thereby preventing the gold ball delamination phenomenon in the subsequent FCB welding.

[0029] 2. Good cleaning effect: The workpiece carrier 200 is close to the positive electrode plate 110 below, and the distance is less than 0.05mm, so that plasma cleaning can better act on the gold finger surface of the substrate. At the same time, the method of first inputting oxygen for chemical reaction cleaning and then introducing argon for physical impact cleaning can completely remove oxides and pollutants on the surface of the substrate, making the cleaning effect better.

[0030] In some embodiments of the present invention, the ceramic plate 120 covers the discharge area of ​​the positive electrode plate 110. The positive electrode plate 110 is a key component of the plasma cleaning device. The discharge area is the part of the positive electrode plate 110 where discharge occurs and is also the main area for plasma generation.

[0031] By providing the ceramic plate 120 , a dielectric discharge mode is formed. The high-energy electrons in the dielectric discharge structure are relatively weak and usually do not damage the surface of the substrate.

[0032] Reference Figure 3 In some embodiments of the present invention, the positioning member 130 is two symmetrically arranged slide rails. The workpiece carrier 200 is placed on the slide rails and can move along the slide rails. The design of the slide rails enables the workpiece carrier 200 to easily enter and exit the plasma cleaning area, which is convenient for loading and removing the substrate.

[0033] The cross-sectional shape of the slide rail is T-shaped or L-shaped, and the edge of the workpiece carrier 200 rests on the slide rail to ensure that the workpiece carrier 200 can move smoothly on the slide rail. The slide rail is arranged horizontally to facilitate the entry, exit and movement of the workpiece carrier 200. At the same time, the length of the slide rail can be customized according to the overall size of the plasma cleaning device and the size of the workpiece to meet the cleaning requirements of different workpieces.

[0034] Furthermore, side plates 131 are provided on the outer sides of the two slide rails, and the side walls of the workpiece carrier 200 abut against the side plates 131, which play a role in positioning and limiting, thereby preventing the workpiece carrier 200 from shifting or shaking during movement, and also maintaining the position of the workpiece carrier 200 stable during the cleaning process.

[0035] Reference Figure 1In some embodiments of the present invention, the cross-section of the positioning groove 210 is set to be rectangular, and avoidance holes are set at the four corners of the positioning groove 210, and the bottom wall of the positioning groove 210 is provided with a through hole that penetrates the workpiece carrier 200. The cross-sectional shape of the positioning groove 210 is rectangular, which matches the shape of the substrate. The depth and width of the positioning groove 210 can be adjusted according to the size and shape of the substrate to ensure that the substrate can be tightly embedded in the positioning groove 210. At the same time, the four corners of the positioning groove 210 are provided with avoidance holes, and the avoidance holes can be used for a robot to enter to clamp the substrate, which is convenient for loading and unloading. The avoidance holes can be circular or in other shapes, as long as the requirements for the robot to enter are met. The bottom wall of the positioning groove 210 is provided with a through hole that penetrates the workpiece carrier 200, which provides a channel for the dielectric discharge to act on the substrate, and the cleaning effect is better.

[0036] Reference Figure 1 In some embodiments of the present invention, the outer wall of the shield 300 is provided with a display screen 330, which is electrically connected to the controller for displaying the working status and parameters of the plasma cleaning device. The controller is electrically connected to the lifting mechanism 310, the positive electrode plate 110 and the negative electrode plate 320, and is used to control various components. The shield 300 is made of high-strength, corrosion-resistant materials and has good sealing and protective properties. The shape and size of the shield 300 match the overall structure of the plasma cleaning device to ensure that the cleaning area can be fully covered to prevent gas leakage.

[0037] The display screen 330 can be a high-brightness, high-definition liquid crystal display screen, which can clearly display the working status and parameters of the plasma cleaning device, such as time, voltage, air pressure and other parameters. The operation of the plasma cleaning device can be understood in real time through the display screen 330, and adjustments and controls can be made as needed. The controller uses a high-performance microprocessor or a programmable logic controller (PLC) with powerful data processing and control capabilities. The controller receives instructions and parameters on the display screen 330 to accurately control the lifting mechanism 310, the positive electrode plate 110 and the negative electrode plate 320, thereby realizing the automatic operation of the plasma cleaning device.

[0038] Reference Figure 1 and Figure 2 In some embodiments of the present invention, the lifting mechanism 310 includes a mounting plate 311 and a plurality of cylinders 312, and the plurality of cylinders 312 are fixed to the bottom surface of the mounting plate 311 and are circumferentially distributed. The plurality of cylinders 312 act synchronously to drive the shield 300 to rise or fall. During the cleaning process, the cylinders 312 maintain pressure so that the shield 300 is tightly connected to the base 100.

[0039] The embodiment of the second aspect of the present invention provides a cleaning method, which is applied to the plasma cleaning device of the embodiment of the first aspect, the plasma cleaning device comprising a base 100, a workpiece carrier 200 and a shield 300, the upper end surface of the base 100 is provided with a positive electrode plate 110, the upper end surface of the positive electrode plate 110 is provided with a ceramic plate 120, the upper end surface of the ceramic plate 120 is provided with a positioning member 130, the base 100 is provided with a vacuum pumping line 140, and the port of the vacuum pumping line 140 is provided on the upper end surface of the ceramic plate 120; the workpiece carrier 200 is provided with a plurality of positioning grooves 210 for loading the substrate to be cleaned, the workpiece carrier 200 Connected to the positioning piece 130, the distance between the workpiece carrier 200 and the ceramic plate 120 is less than or equal to 0.05mm; the shield 300 is located above the base 100, and the shield 300 is connected to a lifting mechanism 310 so that the shield 300 can be covered on the base 100 and form a closed space, the shield 300 is provided with a negative electrode plate 320, the negative electrode plate 320 is located directly above the positive electrode plate 110, the positive electrode plate 110 and the negative electrode plate 320 are located in the closed space, the shield 300 is provided with a first air inlet pipe 301 and a second air inlet pipe 302, the first air inlet pipe 301 and the second air inlet pipe 302 are connected to the closed space.

[0040] The cleaning method includes the following steps: S100 , a substrate to be cleaned is placed in the positioning groove 210 of the workpiece carrier 200 , and the workpiece carrier 200 is placed on the positioning member 130 .

[0041] S200, the lifting mechanism 310 drives the shield 300 to descend, and the shield 300 is placed on the base 100 to form a closed space, and the closed space is evacuated through the vacuum line 140, and the vacuum degree is less than 26 Pa. The closed space is intended to prevent external gas from interfering with the cleaning process and improve the cleaning efficiency and effect. During the cleaning process, the closed space is continuously evacuated through the vacuum line 140 to take away the impurities cleaned out.

[0042] S300, oxygen is input into the enclosed space through the first air inlet pipe 301, and a radio frequency voltage is applied to the positive electrode plate 110 and the negative electrode plate 320 to generate plasma with oxygen, and the substrate is cleaned for the first time. The plasma cleaning effect under oxygen conditions is better. After the enclosed space reaches the required vacuum degree, oxygen is input into the enclosed space through the first air inlet pipe 301. The flow rate of oxygen is controlled at 4 to 6 SCCM, and a high-frequency alternating electric field is used to ionize oxygen molecules to generate plasma. The physical and chemical effects of plasma can remove organic matter, grease and other pollutants on the surface of the substrate to achieve the first cleaning. The power-on time is 9 to 11 seconds, and the power-on time is precisely controlled to ensure the cleaning effect while avoiding unnecessary oxidation of the substrate.

[0043] S400, argon gas is input into the closed space through the second air inlet pipe 302, and a radio frequency voltage is applied to the positive electrode plate 110 and the negative electrode plate 320 to generate plasma from the argon gas, and the substrate is cleaned for the second time. Argon gas is an inert gas, and its plasma has a physical bombardment effect on the surface of the substrate, which can remove tiny particles and oxides and other pollutants on the surface. The flow rate of argon gas is also controlled between 4 and 6 SCCM, and the power-on time is 19 to 21 seconds.

[0044] S500 , nitrogen is introduced into the closed space through the first air inlet pipe 301 or the second air inlet pipe 302 to break the vacuum, and the lifting mechanism 310 drives the protective cover 300 to rise, and the cleaned substrate is taken out.

[0045] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present invention.

Claims

1. A plasma cleaning device, characterized in that: include: A base, wherein the upper end surface of the base is provided with a positive electrode plate, the upper end surface of the positive electrode plate is provided with a ceramic plate, the upper end surface of the ceramic plate is provided with a positioning piece, the base is provided with a vacuum pumping pipeline, and the port of the vacuum pumping pipeline is provided on the upper end surface of the ceramic plate; A workpiece carrier, the workpiece carrier is provided with a plurality of positioning grooves for loading the substrate to be cleaned, the workpiece carrier is connected to the positioning member, and the distance between the workpiece carrier and the ceramic plate is less than or equal to 0.05 mm; A shield is located above the base, and the shield is connected to a lifting mechanism so that the shield can be covered on the base and form a closed space. The shield is provided with a negative electrode plate, and the negative electrode plate is located above the positive electrode plate. The positive electrode plate and the negative electrode plate are located in the closed space. The shield is provided with a first air inlet pipe and a second air inlet pipe, and the first air inlet pipe and the second air inlet pipe are connected to the closed space.

2. The plasma cleaning device according to claim 1, characterized in that: The ceramic plate covers a discharge region of the positive electrode plate.

3. The plasma cleaning device according to claim 1, characterized in that: The positioning members are two symmetrically arranged slide rails, and the workpiece carrier is placed on the slide rails and can move along the slide rails.

4. The plasma cleaning device according to claim 3, characterized in that: Side plates are arranged on the outer sides of the two slide rails, and the side walls of the workpiece carrier plate abut against the side plates.

5. The plasma cleaning device according to claim 1, characterized in that: The cross section of the positioning groove is set to be rectangular, and avoidance holes are set at the four corners of the positioning groove. The bottom wall of the positioning groove is set with a through hole that penetrates the workpiece carrier plate.

6. The plasma cleaning device according to claim 1, characterized in that: The outer wall of the shield is provided with a display screen, the display screen is electrically connected to a controller, and the controller is electrically connected to the lifting mechanism, the positive electrode plate and the negative electrode plate.

7. The plasma cleaning device according to claim 1, characterized in that: The lifting mechanism comprises a mounting plate and a plurality of cylinders, wherein the plurality of cylinders are fixed on the bottom surface of the mounting plate and are distributed in a circumferential direction.

8. A cleaning method, applied to the plasma cleaning device according to any one of claims 1 to 7, characterized in that: The following steps are involved: S100, placing the substrate to be cleaned in the positioning groove of the workpiece carrier; S200, the lifting mechanism drives the shield to descend, the shield is arranged on the base and forms a closed space, and the closed space is evacuated through a vacuum pipeline, and the vacuum degree is less than 26 Pa; S300, oxygen is introduced into the enclosed space through a first air inlet pipe, and the positive electrode plate and the negative electrode plate are energized so that the oxygen generates plasma to perform a first cleaning on the substrate; S400, inputting argon gas into the enclosed space through a second air inlet pipe, energizing the positive electrode plate and the negative electrode plate so that the argon gas generates plasma, and performing a second cleaning on the substrate; S500, breaking the vacuum of the enclosed space, the lifting mechanism driving the shield to rise, and taking out the cleaned substrate.

9. The cleaning method according to claim 8, characterized in that: In the step S300, the flow rate of oxygen is 4 to 6 SCCM, and the power-on time of the positive electrode plate and the negative electrode plate is 9 to 11 seconds.

10. The cleaning method according to claim 8, characterized in that: In the step S400, the flow rate of the argon gas is 4 to 6 SCCM, and the power-on time of the positive electrode plate and the negative electrode plate is 19 to 21 seconds.

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