A large-area phase pattern processing method and device

Abstract

The application discloses a large-area phase pattern processing method and device, and belongs to the field of phase plate processing. The method comprises the following steps: dividing a phase pattern to be processed into multiple blocks; based on selecting one block of the multiple blocks, controlling a first displacement table to move a corresponding position of a substrate to a light processing position; controlling a second displacement table to move the substrate in the block based on the moving direction of the first displacement table, and performing light processing; selecting the next block of the multiple blocks; and repeating the above steps until the processing of the multiple blocks is completed. The method can realize large-area pattern transfer with extremely high precision, and overcomes the difficulty in balancing area and precision in traditional processing technology. The phase plate prepared by the method has the advantages of large area, high fineness, strong stability, and flexibility in adjusting and preparing different patterns according to actual needs.

Description

Technical Field

[0001] The present invention belongs to the field of phase plate processing, and in particular relates to a method for processing a large-area phase pattern. Background Art

[0002] A phase plate is an optical element used to change the phase of light waves passing through it. By changing the phase of light waves, phase plates can achieve precise control of light waves, thus playing a key role in optical applications such as laser systems and quantum imaging. Although traditional methods for preparing phase patterns of optical phase plates, such as photolithography and electron beam exposure technology, have been widely used, these methods still have certain limitations. Specifically, photolithography has a low resolution and requires the use of a mask, which limits the degree of freedom in processing; electron beam exposure technology can achieve nanometer-level processing accuracy, but its processing speed is slow and the cost is high, making it difficult to meet the needs of large-area, high-efficiency phase pattern production.

[0003] With the advent of two-photon polymerization (TPP), three-dimensional micro-nanofabrication has entered a new era. This technology utilizes the nonlinear interaction between femtosecond lasers and photosensitive materials to achieve micron- and even nanometer-scale fine structure processing through the energy threshold effect. It offers unique advantages such as high resolution, high precision, and contactless processing, making it suitable for the fabrication of complex phase patterns. However, utilizing TPP to efficiently produce high-precision phase patterns over large areas while ensuring the physical and chemical stability of the prepared phase plates still presents numerous challenges. In particular, the efficient fabrication of large-area phase patterns faces challenges such as low processing efficiency, limited processing range, and low precision. Summary of the Invention

[0004] In view of the above problems, the present disclosure provides a large-area phase pattern processing method and device to achieve large-area and high-precision phase pattern preparation, which is specifically achieved through the following technical solutions.

[0005] According to a first aspect of the present disclosure, a large-area phase pattern processing method is provided, comprising the steps of:

[0006] S1. Divide the phase pattern to be processed into multiple blocks.

[0007] S2. Based on the selection of one of the plurality of blocks, control the first translation stage to move the corresponding position of the substrate to a photoprocessing position. Control the second translation stage to move the substrate within the one block based on the movement plane of the first translation stage and perform photoprocessing. Select the next block of the plurality of blocks.

[0008] S3. Repeat step S2 until the multiple block processing is completed.

[0009] According to an embodiment of the present disclosure, the light treatment includes: using a single beam of femtosecond laser to focus on a target position of the photoresist, and utilizing a two-photon absorption effect to achieve curing of the photoresist.

[0010] According to an embodiment of the present disclosure, the method of using a single-beam femtosecond laser to focus on the target position of the photoresist and utilizing the two-photon absorption effect to achieve the curing of the photoresist includes: adjusting the height position of the single-beam femtosecond laser focused on the substrate and performing layered light processing on the substrate based on the block.

[0011] According to an embodiment of the present disclosure, before controlling the second translation stage to move the substrate within the one block, the method includes: performing error compensation on the movement of the second translation stage based on the movement of the first translation stage.

[0012] According to an embodiment of the present disclosure, performing error compensation on the movement of the second translation stage based on the movement of the first translation stage includes: performing error compensation on the movement of the second translation stage based on the movement direction of the first translation stage and an empirical error value.

[0013] According to an embodiment of the present disclosure, the method includes the steps of: S4, placing the substrate in a developer for development; S5, transferring a pattern corresponding to the phase pattern onto the substrate.

[0014] According to an embodiment of the present disclosure, step S5 of the method includes:

[0015] S501, evaporating chromium element onto the substrate obtained in S4.

[0016] S502 , using a degumming solution to treat the substrate obtained in S501 .

[0017] S503 , etching the substrate obtained in S502 using an etching machine.

[0018] S504 , using a chromium etching solution to remove the chromium layer on the substrate obtained in S503 .

[0019] Another aspect of the present disclosure provides a large-area phase pattern processing device, comprising:

[0020] The phase pattern processing module is used to divide the phase pattern to be processed into multiple blocks.

[0021] The movement control module is used to control the first translation stage to move the corresponding position of the substrate to the light processing position based on one block of the multiple blocks; and to control the second translation stage to move within the one block and control the light processing.

[0022] The first translation stage is used to drive the second translation stage to move according to the control of the movement control module.

[0023] The second translation stage is used to drive the substrate to move based on the movement plane of the first translation stage under the control of the movement control module.

[0024] The laser is used to perform optical processing on the substrate based on the phase pattern to be processed and the movement of the second translation stage.

[0025] According to an embodiment of the present disclosure, the apparatus includes a feedback adjustment module for controlling the second translation stage to perform displacement compensation according to the movement of the first translation stage.

[0026] According to an embodiment of the present disclosure, the laser is used to perform layered light processing on the substrate based on the height position at which it is focused on the substrate.

[0027] One or more of the above embodiments have the following beneficial effects:

[0028] 1. By dividing the phase pattern to be processed into multiple blocks; based on one of the multiple blocks, controlling the first translation stage to move the corresponding position of the substrate to the optical processing position; controlling the second translation stage to move the substrate within the block in the movement direction of the first translation stage and perform optical processing; selecting the next block of the multiple blocks and repeating the above steps, the technical effect of high-precision processing of large-area phase patterns can be achieved.

[0029] 2. The displacement range of the mechanical translation stage reaches 100×100mm², which can cover a wide range of processing areas; while the processing range of the piezoelectric translation stage is 300×300um 2 , with a displacement accuracy of ±1nm, enabling high-precision machining. The present invention achieves a displacement accuracy of 1nm through the collaborative operation of a piezoelectric and mechanical translation stages, ensuring that the processed phase pattern possesses extremely high precision and detail. This accuracy is of great significance in applications such as optical imaging, optical sensors, and optical waveguides, meeting the stringent precision requirements of these fields and thereby improving the performance and application effectiveness of optical devices.

[0030] 3. High flexibility enables rapid processing of personalized phase patterns. By providing a 3D model file to be processed, the system automatically adjusts processing parameters and efficiently executes the process without the need for complex template or equipment adjustments. This system is particularly well-suited for high-precision, low-volume customization, significantly shortening development cycles while improving production efficiency, making it suitable for both laboratory and industrial production environments. This flexibility enables the present invention to adapt to diverse market demands and reduce production costs.

[0031] 4. The femtosecond laser's energy threshold effect makes the process broadly applicable to transparent substrates and photoresists. By precisely adjusting the laser's energy threshold, high-precision processing can be achieved on a variety of different materials, independent of specific lasers and processing systems. This significantly expands the technology's material applicability and reduces equipment dependency, paving the way for widespread application in both laboratory and industrial environments.

[0032] 5. A comprehensive post-processing process has been designed after two-photon polymerization. The advantage of this process lies in its comprehensiveness and precision. Through the synergistic effect of multiple steps, including development, chromium layer deposition, photoresist removal, cleaning, etching, chromium layer removal, and cleaning, high-precision and efficient pattern transfer and material processing are achieved. The development step ensures clear pattern boundaries, the chromium layer deposition provides a high-adhesion mask, the photoresist removal avoids residual effects, the cleaning step ensures a pure surface, the etching process achieves precise pattern transfer, and the chromium layer removal ensures a clear final pattern. This process significantly improves product quality and meets the requirements of high-precision manufacturing.

[0033] 6. By combining precise laser scanning positioning with the energy threshold effect of two-photon polymerization, high-precision processing control is achieved. Through innovative post-processing techniques, fabrication efficiency and pattern quality are significantly improved. This invention not only optimizes the application of traditional two-photon polymerization technology in large-scale processing, but also overcomes the technical bottlenecks of phase pattern splicing and post-processing. It provides a new, efficient and precise solution for large-area phase pattern fabrication, providing stronger technical support for the manufacture of high-precision components in fields such as optical imaging and optical waveguides.

[0034] 7. This processing method addresses existing issues such as small processing area, low processing precision, inconsistent performance, and limited freedom of processed patterns. By optimizing the processing flow, it improves work efficiency and ensures large-area, high-precision, strong stability, and high degrees of freedom in the final processed phase. This processing method is suitable for processing a variety of transparent materials and can produce large-area pattern structures with specific phase characteristics. It is particularly suitable for applications such as optical imaging, optical waveguides, and optical sensors, where it can be used to control the polarization properties of light and improve imaging quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0036] Figure 1 The flowchart of a large-area phase pattern processing method according to an embodiment of the present disclosure is schematically shown.

[0037] Figure 2The diagram schematically shows the principle of large-area phase pattern light processing according to one embodiment of the present disclosure.

[0038] Figure 3 The flowchart of a large-area phase pattern processing method according to another embodiment of the present disclosure is schematically shown.

[0039] Figure 4 The figure shows the effect of developing a large-area phase pattern according to one embodiment of the present disclosure.

[0040] Figure 5 A large-area phase pattern effect diagram according to an embodiment of the present disclosure is shown.

[0041] Figure 6 A structural block diagram of a large-area phase pattern processing device according to an embodiment of the present disclosure is shown.

[0042] Figure 7 A workflow diagram of a large-area phase pattern processing device according to another embodiment of the present disclosure is shown.

[0043] In the figure, 100 is a first translation stage; 200 is a second translation stage; 300 is a motion control module; 400 is a phase pattern processing module; and 500 is a laser.

[0044] 1. Mechanical translation stage; 2. Piezoelectric translation stage; 3. Sample holder; 4. Substrate; 5. First printing area; 6. Objective lens; 7. Computer; 8. First printing block; 9. Second printing area; 10. Second printing block.

[0045] It should be noted that, for the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the sizes of the overall / local structures or overall / local areas may be enlarged or reduced, that is, these drawings are not drawn according to the actual scale. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0047] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0048] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0049] The following will be combined Figure 1-Figure 5 The large-area phase pattern processing method is described in detail.

[0050] Figure 1 The flowchart of the large area phase pattern processing method according to the embodiment of the present disclosure is schematically shown. Figure 1 As shown, this embodiment includes:

[0051] Step S1: Divide the phase pattern to be processed into multiple blocks.

[0052] Step S2: Based on one of the multiple blocks, control the first translation stage to move the corresponding position of the substrate to the light processing position; control the second translation stage to move the substrate within the one block in the movement direction of the first translation stage and perform light processing; select the next block of the multiple blocks.

[0053] Step S3, repeating step S2 until the multiple block processing is completed.

[0054] In step S1 of the embodiment of the present disclosure, a pre-designed phase pattern to be processed can be obtained and then divided into a plurality of blocks. Before dividing the phase pattern to be processed into a plurality of blocks, a large-area phase pattern model can be designed using model design software. After the phase pattern design is completed, the phase pattern model is then divided into blocks using block processing software.

[0055] In this embodiment, a large-area phase pattern model is designed using model design software, and then the model is sliced ​​and divided into blocks using slicing software. The shape of the large-area phase pattern can be freely defined. The minimum size of the phase pattern is 180nm based on the optical processing linewidth, the height z of the phase pattern is 300nm-8mm, and the minimum slicing distance of the slicing process is 1nm. For example, the volume of the exemplary phase pattern model in this embodiment can be 1300um × 1300um × 400nm (xyz), and the size and shape of the blocks are regular hexagons with a height of 400nm (z) and a side length of 70um.

[0056] In step S2, based on one of the multiple blocks, the first translation stage is controlled to move the corresponding position of the substrate to the light processing position; the second translation stage is controlled to move the substrate within the one block based on the movement plane of the first translation stage and perform light processing; and the next block of the multiple blocks is selected.

[0057] In an embodiment of the present disclosure, one of the multiple blocks pre-divided in step S1 can be selected, and the first translation stage can be controlled to move. The first translation stage further drives the second translation stage to move the substrate to a position corresponding to the block to a photoprocessing position. The second translation stage is then controlled to move the substrate within the block along the movement direction of the first translation stage and perform photoprocessing. For example, if the first translation stage moves horizontally, the second translation stage will also move the substrate along the same horizontal direction. It should be noted that the second translation stage here moves in the direction in which the first translation stage is designed to move. For example, if the first translation stage is designed to move in the horizontal plane, the second translation stage will also move in the horizontal plane. Alternatively, if the first translation stage is designed to move in the xy plane, the second translation stage will also move in the xy plane. The second translation stage is not necessarily required to move in the same linear direction as the first translation stage. For example, if the first translation stage moves only in the x-direction in the horizontal plane, the second translation stage can move in the y-direction, or the second translation stage can move in both the x- and y-directions. In order to process the photoresist in the block, the second translation stage is controlled to move the substrate within the range of the block. As the second translation stage moves, the photoresist at the photolithography position is processed.

[0058] In the embodiments of the present disclosure, a variety of photoresists can be selected to apply the process implemented by the present disclosure according to the specific process design. For example, according to the dissolution behavior of the photoresist, it can be a positive photoresist or a negative photoresist. The part of the positive photoresist exposed to ultraviolet light will undergo chemical changes and become easy to dissolve in a specific developer. After development, the unexposed area is left to form the desired pattern. Negative photoresist: After illumination, the exposed area will become more stable and less soluble. After development, the illuminated area is retained to form a negative image. According to the chemical structure classification of the photosensitive resin, it can be a photopolymerization type photoresist, a photodecomposition type photoresist or a photocross-linking type photoresist, etc. I will not go into details here.

[0059] In the embodiments disclosed herein, the first displacement stage can be a mechanical displacement stage, and the second displacement stage can be a piezoelectric displacement stage. The mechanical displacement stage drives the piezoelectric displacement stage to perform large-scale displacement of the substrate. The mechanical displacement stage has a range of 100 × 100 mm² and a stepping accuracy of ±1 μm. The piezoelectric displacement stage: Based on the piezoelectric effect transmission method, the piezoelectric displacement stage substrate is used to perform small-scale, high-precision displacement. The piezoelectric stage has a range of 300 × 300 μm (i.e., the largest printing block).2 , with a stepping accuracy of ±1nm. During the optical processing process of this embodiment, the piezoelectric stage has high displacement accuracy, but its printing range is limited. The mechanical stage can move over a large range, but its displacement accuracy is lower. The method of this disclosed embodiment can expand the optical processing area while ensuring high-precision printing, effectively achieving large-area, high-precision pattern preparation.

[0060] In an embodiment of the present disclosure, after light processing is completed on one block, a second block is selected from the multiple blocks divided by the phase pattern to be processed. Based on this selected second block, the first translation stage is controlled to move the corresponding position of the substrate to the light processing position; the second translation stage is controlled to move the substrate within the second block in the direction of movement of the first translation stage, and light processing is performed. After light processing of the second block is completed, the step of selecting the next block is repeated until the processing of the multiple blocks is completed.

[0061] Figure 2 The diagram schematically shows the principle of large-area phase pattern light processing according to an embodiment of the present disclosure.

[0062] like Figure 2 As shown, in one embodiment of operation S2, the light treatment includes: using a single-beam femtosecond laser to focus on the target position of the photoresist, and using the two-photon absorption effect to achieve the curing of the photoresist. This embodiment adopts a single-beam femtosecond laser two-photon polymerization technology, focusing the laser on the same focal position of the photoresist through a high numerical aperture objective lens, and using the two-photon absorption effect to achieve local curing of the photoresist. In this process, parameters such as laser power and scanning speed are precisely controlled to achieve high-precision and large-area phase pattern processing. Figure 2 As shown in a, this nonlinear characteristic allows the polymerization reaction to occur only at the laser focus, while almost no polymerization occurs in areas outside the focus, thus achieving extremely high spatial resolution and accuracy. Figure 2 In the single-photon polymerization shown in b, the polymerization reaction occurs in the entire focusing cone, which limits the processing of complex graphic structures.

[0063] In this embodiment, the required single-beam femtosecond laser is obtained by setting the following operating parameters: a wavelength of 780 nm, a repetition rate of 80 MHz, and a pulse width of 80-100 fs. The main processing parameters are a laser power of 25-33 mW. The scanning speed is related to the movement speed of the second translation stage and can be, for example, 3-10 mm / s.

[0064] In some embodiments of the present disclosure, the method of using a single femtosecond laser to focus on a target position of the photoresist and utilizing the two-photon absorption effect to achieve photoresist curing further specifically includes the following implementation steps:

[0065] Step B1: cleaning the substrate: rinse the substrate surface with isopropyl alcohol and blow dry the substrate with nitrogen or air to remove residual solvent. The substrate is 1 mm thick fused quartz. The cleaning time of the substrate with isopropyl alcohol is 20-120 seconds.

[0066] Step B2: Silanization treatment: Use a microwave plasma degumming machine or acetone to treat the cleaned substrate, wherein the oxygen concentration of the microwave plasma degumming machine is 100 sccm, the power is 100 W, the time is 60 seconds, and the time for immersing the substrate in acetone is 720 minutes.

[0067] Step B3: Dropping photoresist: Use a dropper to drop IP-Dip photoresist onto the silanized substrate. The photoresist may be a conventional commercial photoresist, including but not limited to SU-8 and IP-Dip.

[0068] Step B4: Laser direct writing: Use a two-photon polymerization laser direct writing machine to process according to the phase pattern model to be processed, and use the large-area phase pattern processing method of the embodiment of the present disclosure to solidify and shape the photoresist to obtain the initial phase pattern.

[0069] In some embodiments of the present disclosure, focusing a single femtosecond laser beam on a target location of the photoresist and curing the photoresist using the two-photon absorption effect includes adjusting the height position of the single femtosecond laser beam focused on the substrate and performing layered light treatment on the substrate based on the segmentation. In this embodiment, the height position of the single femtosecond laser beam focused on the substrate can be adjusted by adjusting the objective lens of the laser machine used, thereby achieving layered light treatment of photoresists at different heights on the substrate.

[0070] In some embodiments of the present disclosure, before controlling the second translation stage to move the substrate within the block, the process includes: controlling the movement of the second translation stage to perform error compensation based on the movement of the first translation stage. For example, when the first translation stage moves in the x-axis direction within the xy plane, when the first translation stage moves to the target position, due to an error Δx when the first translation stage moves in the x-axis direction, the second translation stage is controlled to first move in the opposite direction of the x-axis by Δx to perform displacement error compensation. Similarly, when the first translation stage moves in the y-axis direction within the xy plane, when the first translation stage moves to the target position, due to an error Δy when the first translation stage moves in the y-axis direction, the second translation stage is controlled to first move in the opposite direction of the y-axis by Δy to perform displacement error compensation. After the second translation stage completes error compensation, the process continues according to the subsequent steps, i.e., controlling the second translation stage to move the substrate within the block in the direction of movement of the first translation stage and performing optical processing.

[0071] In some embodiments of the present disclosure, error compensation for the movement of the second translation stage based on the movement of the first translation stage includes: error compensation for the movement of the second translation stage based on the movement direction of the first translation stage and an empirical error value. In this embodiment, for example, the first translation stage is a mechanical translation stage and the second translation stage is a piezoelectric translation stage. The mechanical translation stage moves in the horizontal direction based on gear transmission. Due to the accuracy issues of the gear transmission, the error generated by the movement is often proportional to the movement distance. In this embodiment, error compensation for the movement of the second translation stage is performed based on the movement direction of the first translation stage and an empirical error value. For example, when the first translation stage moves a distance of x in the x-axis direction and the error is Δx, the second translation stage is controlled to first move Δx in the opposite direction of the x-axis to perform displacement error compensation; because when the first translation stage moves a distance of 2x in the x-axis direction and the error is 2Δx, the second translation stage is controlled to first move 2Δx in the opposite direction of the x-axis to perform displacement error compensation.

[0072] Through the embodiments of the present disclosure, large-area high-precision manufacturing can be achieved: in the optical processing process, the single processing range is usually limited, and the embodiment method can splice multiple small-area high-precision graphics into a large-area graphic, thereby realizing large-area, high-precision graphic manufacturing, meeting the needs of complex structures and large-area applications; improving processing efficiency and quality: by precisely controlling the first translation stage and the second translation stage, the precise alignment of each graphic block is ensured, reducing graphic dislocation caused by mechanical errors, and improving processing efficiency and quality; adapting to complex graphics and structures: in micro-nano processing, graphics often have complex shapes and fine structures. This embodiment can adapt to these complex graphics and structures, and ensure the continuity and consistency of the entire graphic by performing real-time error compensation; reducing manual intervention: the splicing and error compensation of graphics can be completed automatically, reducing manual intervention, improving the degree of automation and repeatability of processing, and ensuring the stability of product quality.

[0073] In order to overcome the precision loss and product quality issues in large-area processing through sophisticated post-processing, some embodiments of the present disclosure further include the steps of: S4, placing the substrate in a developer for development; and S5, transferring the pattern corresponding to the phase pattern onto the substrate.

[0074] In one embodiment of operation S4, the substrate is placed in a developer for development, including: placing the substrate with the phase pattern in the developer for development; after development, rinsing the substrate with isopropyl alcohol; then, rinsing the substrate with deionized water; and drying the substrate with nitrogen or air to remove residual moisture. In this embodiment, the developer can be a conventional commercial negative photoresist developer, including but not limited to PGMEA and SU-8 developers, and the development time is 6-30 minutes.

[0075] In one embodiment of operation S5, transferring a pattern corresponding to the phase pattern onto the substrate comprises the steps of:

[0076] C1 chromium layer deposition: Use electron beam evaporation to deposit chromium onto the second cleaned S4 substrate.

[0077] C2 Photoresist Removal: Use a stripping solution to remove the photoresist that has been cured on the substrate after two-photon polymerization.

[0078] C3 cleaning: After removing the photoresist, clean the substrate with isopropyl alcohol, then rinse the substrate with deionized water, and blow dry the substrate with nitrogen or air to remove residual moisture.

[0079] C4 etching treatment: A reactive ion etcher is used to etch the substrate and remove material from the surface area not covered by the chromium layer.

[0080] C5 Chromium layer removal: Use chromium etching solution to remove the chromium layer on the substrate.

[0081] C6 cleaning: Clean the substrate with isopropyl alcohol, then rinse the substrate with deionized water, and blow dry the substrate with nitrogen or air to remove residual moisture.

[0082] In step C1 of this embodiment, electron beam evaporation is used to deposit chromium onto a secondary cleaned substrate, with the deposited chromium layer having a thickness of 20-400 nm. The advantage of using electron beam evaporation is that it can efficiently produce high-purity, high-density films, which helps improve the adhesion of the film to the substrate and ensure stability during subsequent processing and use. The deposited chromium layer reacts with surface oxygen to form a dense chromium oxide layer, which effectively prevents further oxidation and exhibits high chemical stability in various chemical environments such as etching gases, thereby providing excellent protection and structural stability during subsequent etching and processing steps. Therefore, using electron beam deposition of chromium in pattern transfer can improve the overall pattern transfer quality and performance.

[0083] In step C2 of this embodiment, a degumming solution is used to remove the photoresist cured on the substrate after two-photon polymerization. The degumming solution used is NMP, which is heated in a 75° C. water bath for 120 minutes and then ultrasonically treated for 60-120 seconds.

[0084] In step C4 of this embodiment, a reactive ion etcher is used to etch the substrate, removing material from the surface areas not covered by the chromium layer. The etching gases used are sulfur hexafluoride and trifluoromethane, with flow rates of 8.5 seem and 39.5 seem, respectively, and the etching time is 120 minutes. In this embodiment, the advantage of using a reactive ion etcher is that it can precisely control the material removal process, including selectively removing material from specific areas while leaving other portions of the substrate unaffected. During the pattern transfer process, controlling pattern accuracy is crucial to the functionality and performance of the final structure. Reactive ion etching uses active fluorine atoms and ions generated in the plasma of sulfur hexafluoride and trifluoromethane to chemically react with the substrate material to produce volatile byproducts, thereby achieving material removal. However, chromium has a low reactivity with these active particles. Therefore, during the etching process, the chromium layer can serve as a mask layer to protect the underlying substrate from etching, ensuring the accuracy and quality of the pattern transfer.

[0085] In step C5 of this embodiment, a chromium etching solution is used to remove the chromium layer on the substrate. The chromium etching solution used is model 1020 and the etching time is 480 minutes. The chromium layer on the substrate can be removed using the chromium etching solution because of its chemical composition and reaction mechanism. The chromium etching solution typically contains ingredients such as ammonium cerium nitrate, a non-oxidizing acid, hydrogen peroxide, and a stabilizer. These ingredients react chemically with the chromium layer during the etching process to generate water-soluble compounds, thereby achieving the removal of the chromium layer. For example, ammonium cerium nitrate forms a black, continuously formed new layer on the chromium layer during the etching process. This layer of material is very soluble in water and is therefore also very soluble in chromate etchants. In addition, the chromium etching solution has good selectivity and can effectively remove the chromium layer without affecting other materials on the substrate. This chemical etching method is widely used in semiconductor manufacturing to remove nickel-chromium layers to achieve high-quality pattern transfer and structure preparation.

[0086] In some embodiments of the present disclosure, the large-area phase pattern processing method further includes the following step: A5, quality inspection, using a step meter to detect the depth of the phase pattern, and using a high-resolution microscope to detect the area and accuracy of the phase pattern.

[0087] like Figure 3-Figure 5 As shown, a large-area phase pattern processing method according to an embodiment of the present disclosure includes the following process:

[0088] A1. Design a phase pattern model.

[0089] B1, substrate cleaning; B2, silanization treatment; B3, photoresist dripping; B4, laser direct writing, including steps S1-S3 of the large-area phase pattern processing method.

[0090] A3, photoresist development, including step S4; secondary cleaning.

[0091] C1, chromium layer deposition; C2, photoresist removal and cleaning; C4 etching treatment; C5, chromium layer removal and cleaning.

[0092] A5. Quality Inspection: The above steps have been described in detail in the above embodiments and will not be repeated here.

[0093] In step A3 of this embodiment, the substrate with the phase pattern is placed in a developer for development. After the development is completed, the substrate is rinsed with isopropyl alcohol, then washed with deionized water, and blown dry with nitrogen or air to remove residual moisture. The effect after development is observed under a microscope. Figure 4 shown.

[0094] In this embodiment, step A5: the depth of the phase pattern is detected using a step profiler, and the area and precision of the phase pattern are detected using a high-resolution microscope. The measured depth is 2 μm. The processed pattern is as follows: Figure 5 shown.

[0095] Based on the above large area phase pattern processing method, the present disclosure also provides a large area phase pattern processing device. Figure 6-Figure 7 The device is described in detail.

[0096] Figure 6 The structural block diagram of a large-area phase pattern processing device according to an embodiment of the present disclosure is schematically shown.

[0097] like Figure 6 As shown, the large-area phase pattern processing device of this embodiment includes:

[0098] The phase pattern processing module 400 is used to divide the phase pattern to be processed into multiple blocks.

[0099] The movement control module 300 is used to control the first translation stage 100 to move the corresponding position of the substrate to the light treatment position based on the selection of a block of the multiple blocks; to control the second translation stage 200 to move within the block and control the light treatment; and to select the next block of the multiple blocks.

[0100] The first displacement stage 100 is used to drive the second displacement stage 200 to move according to the control of the movement control module 300 .

[0101] The second translation stage 200 is used to drive the substrate to move along the moving direction of the first translation stage 100 under the control of the movement control module 300 .

[0102] The laser 500 is used to perform optical processing on the substrate based on the phase pattern to be processed and the movement of the second translation stage 200.

[0103] According to an embodiment of the present disclosure,

[0104] In some embodiments of the present disclosure, the large-area phase pattern processing apparatus further includes:

[0105] The feedback adjustment module is used to control the second translation stage 200 to perform displacement compensation according to the movement of the first translation stage 100 .

[0106] like Figure 7 The large-area phase pattern processing device of some embodiments of the present disclosure is shown. In this embodiment, a two-photon polymerization laser direct writer is used for optical processing. The first translation stage is a mechanical translation stage 1, and the second translation stage is a piezoelectric translation stage 2. The sample holder 3 is placed on the piezoelectric translation stage 2, and the substrate 4 is placed on the sample holder 3. The functions of the motion control module and the feedback adjustment module can be specifically implemented by a computer 7. This embodiment controls the movement of the piezoelectric translation stage based on the movement of the mechanical translation stage to perform error compensation. The specific implementation steps are as follows:

[0107] Step D1: Initialize the two-photon polymerization laser direct writer and move the mechanical translation stage 1 and the piezoelectric translation stage 2 to their initial positions.

[0108] Step D2: Based on the selected one of the multiple blocks, the mechanical translation stage 1 is controlled to move the corresponding position of the substrate 4 to the light processing position. The mechanical translation stage 1 drives the piezoelectric translation stage 2 to move, and drives the sample holder 3 and the first printing area 5 of the substrate 4 to the position facing the objective lens 6, as shown in FIG. Figure 7 a. Control the piezoelectric displacement stage 2 to move the substrate 4 within the first printing area 5 along the moving direction of the mechanical displacement stage 1. According to the pre-divided blocks, the first printing area 5 is first light-processed to print out the first printing block 8. Figure 7 b.

[0109] Step D3: Select the second block of the plurality of blocks to control the movement of the mechanical displacement stage 1 so that the second printing area 9 corresponding to the substrate 4 moves to a position facing the objective lens 6. Figure 7 c. At this time, due to the error in the movement of the mechanical displacement stage, the second printing area 9 overlaps with the edge of the first printing block 8.

[0110] Step D4: The computer 7 moves the piezoelectric displacement stage 2 according to the direction of movement of the mechanical displacement stage 1 and the empirical error value to perform error compensation. Figure 7 As shown in Figure d, after displacement compensation, the overlapping area disappears.

[0111] Step D5: Control the piezoelectric stage to move and perform optical processing on the second block, such as Figure 7 As shown in FIG. 5 , the second printing block 10 is completed. The subsequent processing of the plurality of blocks is performed according to the above steps.

[0112] In some embodiments of the present disclosure, the laser is used to perform layered light processing on the substrate based on the height position of the laser focused on the substrate. Figure 7 As shown, by adjusting the objective lens 6 of the laser, the height position at which the laser is focused on the substrate 4 is changed, thereby achieving layered light processing.

[0113] The large-area phase pattern processing device of this embodiment realizes large-area high-precision manufacturing: in the optical processing process, the single processing range is usually limited, and the graphic splicing system can splice multiple small-area high-precision graphics into a large-area graphic, thereby realizing large-area, high-precision graphic manufacturing, meeting the needs of complex structures and large-area applications; improving processing efficiency and quality: the device ensures the precise alignment of each graphic block by precisely controlling the first translation stage and the second translation stage, reducing the graphic dislocation caused by the movement error of the first translation stage, and improving processing efficiency and quality; adapting to complex graphics and structures: in micro-nano processing, graphics often have complex shapes and fine structures. The device of this embodiment can adapt to these complex graphics and structures, and perform real-time error compensation through the feedback control module to ensure the continuity and consistency of the entire graphic; reducing manual intervention: the graphic splicing system can automatically complete the splicing and error compensation of the graphics, reduce manual intervention, improve the degree of automation and repeatability of processing, and ensure the stability of product quality.

[0114] This embodiment achieves high-precision processing control by combining precise laser scanning positioning with the energy threshold effect of two-photon polymerization. Through innovative post-processing techniques, it significantly improves fabrication efficiency and pattern quality. This invention not only optimizes the application of traditional two-photon polymerization technology in large-scale processing but also overcomes technical bottlenecks in phase pattern splicing and post-processing, providing a new, efficient and precise solution for large-area phase pattern fabrication. This provides even more powerful technical support for the manufacture of high-precision components in fields such as optical imaging and optical waveguides.

[0115] Those skilled in the art will appreciate that the features described in the various embodiments of the present disclosure may be combined and / or coupled in various ways, even if such combinations or couplings are not explicitly described in the present disclosure. In particular, the features described in the various embodiments of the present disclosure may be combined and / or coupled in various ways without departing from the spirit and teachings of the present disclosure. All such combinations and / or couplings fall within the scope of the present disclosure.

[0116] The embodiments of the present disclosure are described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be used in combination to advantage. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A large-area phase pattern processing method, characterized in that: Including steps: S1, dividing the phase pattern to be processed into multiple blocks; S2. Based on a selected block among the plurality of blocks, control the first translation stage to move the corresponding position of the substrate to the light processing position, and perform error compensation on the movement of the second translation stage based on the movement direction of the first translation stage and an empirical error value; controlling the second translation stage to move the substrate within the block based on the movement plane of the first translation stage, adjusting the height position of the single femtosecond laser focused on the substrate, and performing layered optical processing on the substrate based on the block; selecting a next block of the plurality of blocks; S3, repeating step S2 until the multiple block processing is completed; S4, placing the substrate in a developer for development; S5, transferring a pattern corresponding to the phase pattern onto the substrate; Wherein, the step S5 includes: S501, evaporating chromium element onto the substrate obtained in S4; S502, treating the substrate obtained in S501 with a degumming solution and cleaning it; S503, etching the substrate obtained in S502 using an etching machine; S504: using a chromium etching solution to remove the chromium layer on the substrate obtained in S503 and then cleaning it.

2. A large-area phase pattern processing device for the method according to claim 1, characterized in that: include: A phase pattern processing module, used for dividing the phase pattern to be processed into a plurality of blocks; a movement control module, configured to, based on a selected one of the plurality of blocks, control the first translation stage to move the corresponding position of the substrate to the optical processing position, and perform error compensation for the movement of the second translation stage based on the movement direction and an empirical error value of the first translation stage; control the second translation stage to move within the one block, adjust the height position of the single femtosecond laser focused on the substrate, perform layered optical processing on the substrate based on the block; and control the optical processing; and select the next block of the plurality of blocks; The first translation stage is used to drive the second translation stage to move according to the control of the movement control module; a second translation stage, configured to drive the substrate to move along the movement plane of the first translation stage under the control of the movement control module; A laser is used to perform optical processing on the substrate based on the phase pattern to be processed and the movement of the second translation stage.

3. The device according to claim 2, characterized in that include: The feedback adjustment module is used to control the second translation stage to perform displacement compensation according to the movement of the first translation stage.

4. The device according to claim 2, characterized in that The laser is used to perform layered light processing on the substrate based on the height position of the laser focused on the substrate.

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