Solid silicon carbide manufacturing device
By using an adjustable nozzle and substrate moving support mechanism in the solid silicon carbide manufacturing device, the problems of uneven gas supply and the inability to quickly adjust the rotation of the substrate in traditional devices are solved, and the uniformity of substrate deposition and production quality are improved.
Patent Information
- Application Number
- CN202411919864.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-05-13
AI Technical Summary
In traditional solid silicon carbide manufacturing devices, the nozzle direction cannot be adjusted, resulting in uneven gas supply, and the position of the substrate cannot be adjusted and rotated quickly during the reaction process, resulting in uneven film thickness.
A solid silicon carbide manufacturing device is designed, using a gas supply mechanism to quickly adjust the angle of the nozzle, and the substrate is moved to drive the substrate to lift and rotate in the reaction tank through the substrate moving support mechanism to ensure uniform adsorption of the reaction gas.
The uniformity of substrate deposition is achieved, the production quality of substrate is improved, and the problems of inadequate nozzle direction and in traditional devices cannot be adjusted quickly in the position of substrate.
Smart Images
Figure CN119980182A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of manufacturing devices, and in particular to a solid silicon carbide manufacturing device. Background Art
[0002] The solid silicon carbide manufacturing device is a professional equipment used to produce silicon carbide materials. Silicon carbide is a high-performance ceramic material with high thermal conductivity, high hardness, high wear resistance and good chemical stability. It is widely used in semiconductors, aerospace, machinery, chemical industry and other fields.
[0003] In traditional solid silicon carbide manufacturing equipment, the nozzles for supplying raw material gas are mostly fixed structures, which results in an uneven supply of gas. At the same time, during the reaction process, the position of the substrate cannot be quickly adjusted and rotated, further causing the film thickness formed on the substrate to be uneven and deviated.
[0004] Therefore, in order to address the problem of uneven film thickness formed on the substrate due to the fact that the nozzle direction in the above-mentioned traditional solid silicon carbide manufacturing device cannot be adjusted and the position of the substrate cannot be quickly adjusted and rotated during the reaction process, a solid silicon carbide manufacturing device can be designed to ensure that the reaction gas can be evenly adsorbed onto each substrate. Summary of the invention
[0005] In order to overcome the problem that the nozzle direction in the traditional solid silicon carbide manufacturing device cannot be adjusted, and the position of the substrate cannot be quickly adjusted and rotated during the reaction process, which leads to the problem of uneven film thickness formed on the substrate.
[0006] The technical scheme of the present invention is: a solid silicon carbide manufacturing device, comprising a reaction tank body, a substrate moving support mechanism, a heating jacket, a control device, a gas supply mechanism, a sealing cover and an exhaust pipe; a reaction zone is opened at the bottom end of the reaction tank body, a heating jacket is provided on the outside of the reaction tank body, a substrate moving support mechanism for fixing and supporting the substrate to be deposited and adjusting the position and angle of the substrate during the deposition process is provided inside the reaction tank body, a control device is installed on the outside of the reaction tank body, gas supply mechanisms are installed at both ends of the outside of the heating jacket near the bottom, a sealing cover is hingedly connected to the upper end of the reaction tank body, an exhaust pipe is provided near the top of the side end of the reaction tank body, a protective control cover is included inside the substrate moving support mechanism, a first servo motor is installed on one side of the bottom end of the protective control cover, a driving wheel is installed on the outside of the output shaft of the first servo motor, a conveyor belt is connected to the outside of the driving wheel for transmission, a driven wheel is connected to the outside of the conveyor belt for transmission, and a threaded adjustment rod is installed on the end of the driving wheel and the driven wheel away from the first servo motor.
[0007] Preferably, starting the substrate moving support mechanism can drive the substrate to rise, fall and rotate in the reaction tank, and starting the gas supply mechanism can quickly adjust the angle of the nozzle so that the reaction gas can be evenly adsorbed onto each substrate, greatly improving the production quality of the substrate.
[0008] Preferably, a movable sleeve block is threadedly connected to the outer side of the threaded adjustment rotating rod, and a pressure-bearing horizontal plate is fixedly connected to the inner side of the movable sleeve block near the bottom end.
[0009] Preferably, a control shell is installed on the upper end of the pressure-bearing horizontal plate, a rotating motor is installed inside the control shell, and a rotating chassis is fixedly connected to the upper end of the output shaft of the rotating motor.
[0010] Preferably, guide vertical plates are fixedly connected on both sides of the inner wall of the reaction tank, a limiting slide groove is provided on the inner surface of the guide vertical plates, and a limiting slider sliding in the limiting slide groove is fixedly connected to the outer side of the movable sleeve block.
[0011] Preferably, a bidirectional cylinder is installed at the upper end of the rotating chassis, a side positioning clamp is installed at the movable end of the bidirectional cylinder, and an elastic pressure pad is installed on the inner side of the side positioning clamp near the top end.
[0012] Preferably, a substrate placement plate is installed at the upper end of the shell of the bidirectional cylinder, and equally spaced spacer bars are installed at the upper end of the substrate placement plate.
[0013] Preferably, the gas supply mechanism comprises an air inlet pipe installed on the outside of the heating jacket, a control valve is installed on the outside of the air inlet pipe, and a gas supply hose extending to the inside of the reaction tank is installed on the side end of the control valve.
[0014] Preferably, an L-shaped fixing plate is fixedly connected to the inner wall of the reaction tank, a second servo motor is installed on the outside of the heating jacket above the air inlet pipe, and a driving gear is installed on the outside of the output shaft of the second servo motor.
[0015] Preferably, the outer side of the driving gear is meshedly connected with a driven gear, the side end of the driven gear is connected to one side of the air delivery hose with a through pipe, and the side end of the through pipe is installed with a diverter nozzle.
[0016] The beneficial effects of the present invention are as follows: compared with the fixed nozzle of the traditional solid silicon carbide manufacturing device, the device can use the gas supply mechanism to quickly adjust the angle of the nozzle, so that the deposition of the substrate can be uniform. At the same time, the substrate moving support mechanism can drive the substrate to rise and fall and rotate in the reaction tank, and the reaction gas can be evenly adsorbed onto each substrate, which greatly improves the production quality of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 What is shown is a schematic diagram of the three-dimensional structure of the solid silicon carbide manufacturing device of the present invention;
[0018] Figure 2 Shown is a partial three-dimensional structural schematic diagram of a substrate moving support mechanism in a solid silicon carbide manufacturing device of the present invention;
[0019] Figure 3 Shown is a schematic diagram of the disassembled structure of the limit slider in the solid silicon carbide manufacturing device of the present invention;
[0020] Figure 4 Shown is a schematic diagram of the split structure of the substrate placement plate in the solid silicon carbide manufacturing device of the present invention;
[0021] Figure 5 The figure shows a three-dimensional structure schematic diagram of an air intake pipe in a solid silicon carbide manufacturing device of the present invention;
[0022] Figure 6 Shown is a schematic diagram of the three-dimensional structure of the split flow nozzle in the solid silicon carbide manufacturing device of the present invention.
[0023] Description of the accompanying drawings: 1, reaction tank body; 3, heating jacket; 4, control device; 6, sealing cover; 7, exhaust pipe; 201, protective control cover; 202, first servo motor; 203, driving wheel; 204, driven wheel; 205, threaded adjustment rod; 206, movable sleeve block; 207, pressure-bearing horizontal plate; 208, control shell; 209, rotating motor; 210, rotating chassis; 211, guide vertical plate; 212, limit Slide groove; 213, limit slider; 214, two-way cylinder; 215, side positioning clamp; 216, elastic pressure pad; 217, substrate placement plate; 218, spacer bar; 219, conveyor belt; 501, air intake pipe; 502, control valve; 503, air supply hose; 504, L-shaped fixing plate; 505, second servo motor; 506, driving gear; 507, driven gear; 508, through pipe; 509, diverter nozzle. DETAILED DESCRIPTION
[0024] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0025] See also Figure 1-Figure 6The present invention provides an embodiment: a solid silicon carbide manufacturing device, comprising a reaction tank body 1, a substrate moving support mechanism, a heating jacket 3, a control device 4, a gas supply mechanism, a sealing cover 6 and an exhaust pipe 7; a reaction zone is opened at the bottom end of the reaction tank body 1, a heating jacket 3 is sleeved on the outside of the reaction tank body 1, a substrate moving support mechanism for fixing and supporting a substrate to be deposited and adjusting the position and angle of the substrate during the deposition process is arranged inside the reaction tank body 1, a control device 4 is installed on the outside of the reaction tank body 1, gas supply mechanisms are installed at both ends of the outside of the heating jacket 3 near the bottom, a sealing cover 6 is hingedly connected to the upper end of the reaction tank body 1, an exhaust pipe 7 is arranged near the top of the side end of the reaction tank body 1, and the substrate moving support mechanism The interior includes a protection control cover 201, a first servo motor 202 is installed on one side of the bottom end of the protection control cover 201, a driving wheel 203 is installed on the outer side of the output shaft of the first servo motor 202, a conveyor belt 219 is connected to the outer side of the driving wheel 203, a driven wheel 204 is connected to the outer side of the conveyor belt 219, a threaded adjustment rod 205 is installed on the outer side of the driving wheel 203 and the driven wheel 204 away from the first servo motor 202, and the substrate moving support mechanism is started to drive the substrate to rise and fall and rotate in the reaction tank body 1, and the gas supply mechanism is started at the same time to quickly adjust the angle of the nozzle, so that the reaction gas can be evenly adsorbed on each substrate, which greatly improves the production quality of the substrate.
[0026] See also Figure 3-Figure 4 In this embodiment, the outer side of the threaded adjustment rotating rod 205 is threadedly connected with a movable sleeve block 206, the inner side of the movable sleeve block 206 is fixedly connected with a pressure-bearing horizontal plate 207 near the bottom, the upper end of the pressure-bearing horizontal plate 207 is installed with a control shell 208, and a rotating motor 209 is installed inside the control shell 208. The upper end of the output shaft of the rotating motor 209 is fixedly connected with a rotating chassis 210. Both sides of the inner wall of the reaction tank body 1 are fixedly connected with guide vertical plates 211, and the inner surface of the guide vertical plates 211 is provided with a limited position. The slide groove 212 and the outer side of the movable sleeve block 206 are fixedly connected with a limiting slider 213 that slides inside the limiting slide groove 212. A two-way cylinder 214 is installed on the upper end of the rotating chassis 210. A side positioning clamp 215 is installed on the movable end of the two-way cylinder 214. An elastic pressure pad 216 is installed on the inner side of the side positioning clamp 215 near the top. A substrate placement plate 217 is installed on the upper end of the shell of the two-way cylinder 214, and equidistantly distributed spacer bars 218 are installed on the upper end of the substrate placement plate 217.
[0027] See also Figure 5-Figure 6In this embodiment, the gas supply mechanism includes an air inlet pipe 501 installed on the outside of the heating jacket 3, a control valve 502 is installed on the outside of the air inlet pipe 501, a gas hose 503 extending to the inside of the reaction tank body 1 is installed on the side end of the control valve 502, an L-shaped fixing plate 504 is fixedly connected to the inner wall of the reaction tank body 1, a second servo motor 505 is installed on the outside of the heating jacket 3 above the air inlet pipe 501, a driving gear 506 is installed on the outside of the output shaft of the second servo motor 505, a driven gear 507 is meshed and connected on the outside of the driving gear 506, a through pipe 508 is connected to one side of the gas hose 503 at the side end of the driven gear 507, and a diverter nozzle 509 is installed at the side end of the through pipe 508.
[0028] When working, the first servo motor 202 is started, the driving wheel 203 can drive the conveyor belt 219 to rotate, so that the driven wheel 204 rotates, and further drives the two sets of threaded adjustment rods 205 on the driving wheel 203 and the driven wheel 204 to rotate, so that the movable sleeve 206 can drive the rotating chassis 210 to move up and down, and at the same time, the limiting slider 213 slides stably in the limiting slide groove 212, thereby ensuring the stability of lifting;
[0029] Then, the rotating motor 209 is started to drive the rotating chassis 210 to rotate, and the substrate can be lifted and rotated. The substrate can be placed on the substrate placement plate 217 in a separated manner. At the same time, the bidirectional cylinder 214 is started to enable the side positioning clamping plate 215 to clamp and fix the two sides of the substrate so that the substrate will not be loosened during the adjustment process to affect the adsorption of the gas.
[0030] By opening the control valve 502, the reaction gas can enter the gas delivery hose 503 from the air inlet pipe 501, and starting the second servo motor 505, the driving gear 506 can drive the driven gear 507 to rotate, so that the diverter nozzle 509 on the through pipe 508 can rotate, and the angle of the diverter nozzle 509 can be quickly adjusted, so that the reaction gas can be evenly adsorbed onto each substrate, which greatly improves the production quality of the substrate.
[0031] Through the above steps, the angle of the nozzle can be quickly adjusted through the set gas supply mechanism, so that the deposition of the substrate can be uniform, and at the same time, the substrate can be driven to rise and fall and rotate in the reaction tank body 1 by using the substrate moving support mechanism, so that the reaction gas can be evenly adsorbed onto each substrate, which greatly improves the production quality of the substrate and solves the problem that the nozzle direction in the traditional solid silicon carbide manufacturing device cannot be adjusted. At the same time, during the reaction process, the position of the substrate cannot be quickly adjusted and rotated, which leads to the problem of uneven film thickness formed on the substrate.
[0032] The embodiments of the present invention are described in detail above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of those skilled in the art without departing from the spirit of the present invention.
Claims
1. A solid silicon carbide manufacturing device, comprising a reaction tank (1); characterized in that: The invention also comprises a substrate moving support mechanism, a heating jacket (3), a control device (4), a gas supply mechanism, a sealing cover (6) and an exhaust pipe (7); a reaction zone is provided at the bottom of the reaction tank body (1); a heating jacket (3) is provided on the outside of the reaction tank body (1); a substrate moving support mechanism is provided inside the reaction tank body (1) for fixing and supporting the substrate to be deposited and adjusting the position and angle of the substrate during the deposition process; a control device (4) is installed on the outside of the reaction tank body (1); gas supply mechanisms are installed at both ends of the outside of the heating jacket (3) near the bottom; and a sealing cover (6) is hingedly connected to the upper end of the reaction tank body (1). An exhaust pipe (7) is provided near the top of the side end of the reaction tank body (1), and a protective control cover (201) is provided inside the substrate moving support mechanism. A first servo motor (202) is installed on one side of the bottom end of the protective control cover (201), a driving wheel (203) is installed on the outer side of the output shaft of the first servo motor (202), a conveyor belt (219) is connected to the outer side of the driving wheel (203), a driven wheel (204) is connected to the outer side of the conveyor belt (219), and a threaded adjustment rod (205) is installed on the outer side of the driving wheel (203) and the driven wheel (204) away from the first servo motor (202).
2. The solid silicon carbide manufacturing device according to claim 1, characterized in that: The outer side of the threaded adjustment rotating rod (205) is threadedly connected with a movable sleeve block (206), and the inner side of the movable sleeve block (206) is fixedly connected with a pressure-bearing horizontal plate (207) near the bottom end.
3. The solid silicon carbide manufacturing device according to claim 2, characterized in that: A control housing (208) is installed on the upper end of the pressure-bearing horizontal plate (207), a rotating motor (209) is installed inside the control housing (208), and a rotating chassis (210) is fixedly connected to the upper end of the output shaft of the rotating motor (209).
4. The solid silicon carbide manufacturing device according to claim 2, characterized in that: Both sides of the inner wall of the reaction tank body (1) are fixedly connected with guide vertical plates (211), the inner surface of the guide vertical plates (211) is provided with a limit slide groove (212), and the outer side of the movable sleeve block (206) is fixedly connected with a limit slide block (213) that slides inside the limit slide groove (212).
5. The solid silicon carbide manufacturing device according to claim 3, characterized in that: A bidirectional cylinder (214) is installed at the upper end of the rotating chassis (210), a side positioning clamping plate (215) is installed at the movable end of the bidirectional cylinder (214), and an elastic pressure pad (216) is installed on the inner side of the side positioning clamping plate (215) near the top end.
6. The solid silicon carbide manufacturing device according to claim 5, characterized in that: A substrate placement plate (217) is installed at the upper end of the shell of the bidirectional cylinder (214), and equally spaced spacing bars (218) are installed at the upper end of the substrate placement plate (217).
7. The solid silicon carbide manufacturing device according to claim 1, characterized in that: The gas supply mechanism comprises an air inlet pipeline (501) installed on the outside of the heating jacket (3), a control valve (502) installed on the outside of the air inlet pipeline (501), and a gas delivery hose (503) extending to the inside of the reaction tank body (1) installed on the side end of the control valve (502).
8. The solid silicon carbide manufacturing device according to claim 1, characterized in that: An L-shaped fixing plate (504) is fixedly connected to the inner wall of the reaction tank body (1), a second servo motor (505) is installed on the outer side of the heating jacket (3) above the air inlet pipe (501), and a driving gear (506) is installed on the outer side of the output shaft of the second servo motor (505).
9. The solid silicon carbide manufacturing device according to claim 7, characterized in that: The driving gear (506) is meshedly connected with a driven gear (507) on its outer side, and a through pipe (508) is connected to one side of the gas delivery hose (503) at the side end of the driven gear (507), and a diverter nozzle (509) is installed at the side end of the through pipe (508).