Spraying device and deposition equipment

Abstract

The invention provides a spraying device and deposition equipment, and the spraying device comprises a spraying cavity which is hollow, and the bottom of the spraying cavity is provided with a plurality of spraying holes at intervals; the partition plate is arranged in the spraying cavity and divides the space in the spraying cavity into an upper-layer space and a lower-layer space, a plurality of flow guide pieces are arranged on the bottom face of the partition plate at intervals, the flow guide pieces penetrate through the lower-layer space and stretch into the corresponding spraying holes, slits are formed between the flow guide pieces and the hole walls of the spraying holes, and the slits are communicated with the lower-layer space; the channel penetrates through the partition plate and the flow guide part and is communicated with the upper-layer space. Process gas in the lower-layer space can enter the reaction chamber through the slits between the flow guide parts and the hole walls of the spraying holes, and process gas in the upper-layer space can enter the spraying holes through the channels and then enter the reaction chamber. The single spraying hole can serve as a circulation channel of process gas in the upper-layer space and the lower-layer space at the same time, and the deposition rate and uniformity are prevented from being affected by optimizing the circulation path of the process gas.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a spray device and a deposition device. Background Art

[0002] In the deposition process, for example, in the Atomic Layer Deposition (ALD) process, since the precursor gas and the reaction gas need to be introduced separately, the shower plate usually has a precursor gas chamber and a precursor gas channel corresponding to the precursor gas, and a reaction gas chamber and a reaction gas channel corresponding to the reaction gas, and the channel opening of the precursor gas channel and the channel opening of the reaction gas channel are both located on the bottom surface of the shower plate. When the precursor gas is introduced, the precursor gas passes through the precursor gas chamber and the precursor gas channel, and enters the reaction chamber through the channel opening of the precursor gas channel; when the reaction gas is introduced, the reaction gas passes through the reaction gas chamber and the reaction gas channel, and enters the reaction chamber through the channel opening of the reaction gas channel.

[0003] Due to the independent design of the precursor gas channel and the reaction gas channel, that is, the channel openings of the precursor gas channel and the channel openings of the reaction gas channel respectively occupy part of the bottom area of ​​the shower plate, which limits the number and distribution of the channel openings. The gas flow rate and flow velocity will also be limited, which will affect the deposition rate and even cause the problem of uneven gas distribution, thereby affecting the uniformity of deposition.

[0004] In view of this, it is necessary to propose a spray device and a deposition equipment to solve the above problems. Summary of the invention

[0005] The object of the present invention is to provide a spray device and a deposition equipment to improve the problem that the existing independent separation design of the precursor gas channel and the reaction gas channel will affect the deposition rate and deposition uniformity.

[0006] The present invention provides a spraying device, comprising: The spray cavity is hollow inside and has a plurality of spray holes spaced apart at the bottom; a partition plate, which is arranged in the spray cavity and divides the space in the spray cavity into an upper space and a lower space, a plurality of flow guides are arranged at intervals on the bottom surface of the partition plate, the flow guides are arranged in one-to-one correspondence with the spray holes, the flow guides pass through the lower space and extend into the corresponding spray holes, a slit is formed between the flow guide and the hole wall of the spray hole, and the slit is communicated with the lower space; A channel is arranged in one-to-one correspondence with the guide member, the channel passes through the partition plate and the corresponding guide member, and the channel is communicated with the upper space.

[0007] The beneficial effect of the spray device provided by the present invention is that the space in the spray chamber is divided into an upper space and a lower space by a partition plate, and the guide member on the partition plate extends into the corresponding spray hole. On the one hand, the process gas in the lower space can enter the reaction chamber through the slit between the guide member and the hole wall of the spray hole, and on the other hand, the process gas in the upper space can enter the reaction chamber through the channel on the guide member located in the spray hole. Through this design, a single spray hole can simultaneously serve as a flow channel for process gases in the upper space and the lower space, and by optimizing the flow path of the process gas, it is avoided to affect the deposition rate and deposition uniformity.

[0008] In a possible embodiment, P first guide plates are provided in the upper space, and a plurality of first guide holes are provided at intervals on the first guide plates. When P is greater than 1, the P first guide plates are spaced apart in the vertical direction, and P is a positive integer.

[0009] In a possible embodiment, Q second guide plates are provided in the lower space, a plurality of second guide holes are provided at intervals on the second guide plates, the second guide holes are arranged in one-to-one correspondence with the guide members, the guide members pass through the corresponding second guide holes and a gap is formed between the guide members and the hole walls of the second guide holes, and when Q is greater than 1, the second guide plates are spaced apart in the vertical direction, and Q is a positive integer.

[0010] Its beneficial effects are: through the first guide holes on the first guide plate, the process gas in the upper space can be promoted to diffuse evenly in the upper space; through the second guide holes on the second guide plate, the process gas in the lower space can be promoted to diffuse evenly in the lower space.

[0011] In a possible embodiment, there is a first distance between the flow guide and the bottom surface of the spray cavity.

[0012] The beneficial effect is that the design of having a first distance between the guide member and the bottom surface of the spray chamber allows the spray device to be applied not only to processing techniques in which process gases are introduced separately, but also to processing techniques in which two process gases are introduced as a mixture, so that the spray device can adapt to different process requirements and improve adaptability and flexibility.

[0013] In a possible embodiment, the spray hole includes a first hole segment connected to the lower space and a second hole segment connected to the first hole segment, and the aperture of the second hole segment is smaller than the aperture of the first hole segment; The flow guide is located in the first hole section.

[0014] The beneficial effect is that for a processing technology in which two process gases are mixed and introduced, since the aperture of the second hole segment is smaller than the aperture of the first hole segment, the aperture of the spray hole becomes smaller, which helps the process gas flowing out of the slit and the process gas flowing out of the channel to be fully mixed in the second hole segment before entering the reaction chamber.

[0015] In a possible embodiment, the spray hole further includes a third hole segment connected between the first hole segment and the second hole segment, and a hole diameter of the third hole segment gradually decreases from the first hole segment to the second hole segment.

[0016] The beneficial effect is that by setting the third hole segment between the first hole segment and the second hole segment, the gradual change of the aperture of the third hole segment can avoid the sudden change of the flow rate of the process gas due to the sudden change of the aperture, thereby avoiding turbulence and eddy current.

[0017] In a possible embodiment, the guide member includes a main body section disposed on the bottom surface of the partition plate and a diameter-changing section disposed at the bottom end of the main body section, and the cross-sectional size of the diameter-changing section gradually decreases from one end close to the main body section to one end far from the main body section; The main body section is located in the first hole section, and a first slit portion of the slit is formed between the main body section and the hole wall of the first hole section; The diameter-changing section is located in the third hole section, and a second slit portion of the slit is formed between the diameter-changing section and the hole wall of the third hole section.

[0018] The beneficial effect is that the cross-sectional size of the variable diameter section gradually decreases to match the gradually decreasing aperture of the third hole section, thereby realizing a gradual transition from the first hole section with a larger aperture to the second hole section with a smaller aperture, so that the flow rate of the process gas can change smoothly when passing through the third hole section, thereby ensuring the smooth flow of the process gas.

[0019] In a possible embodiment, there is a second distance between the flow guide and the second hole segment.

[0020] The beneficial effect is that for a processing technology in which two process gases are mixed and introduced, the second spacing provides a space for preliminary mixing of the process gas flowing out of the slit and the process gas flowing out of the channel. After preliminary mixing at the second spacing, the gases are further fully mixed through the second hole section before entering the reaction chamber, thereby ensuring that the different process gases can be fully and evenly mixed.

[0021] In a possible embodiment, the channel includes a first communicating section and a second communicating section that are connected to each other, the first communicating section is connected to the upper space, and the second communicating section is connected to the spray hole; The aperture of the first connecting section is larger than the aperture of the second connecting section.

[0022] Its beneficial effect is that for the processing technology in which two process gases are mixed and introduced, the channel is designed as the first connecting section with a larger aperture and the second connecting section with a smaller aperture, so as to cooperate with the variable diameter design of the spray hole, and control the flow rate of the process gas in the channel and the process gas at the slit into the second hole section by reducing the aperture, thereby ensuring that the process gas flowing out of the slit and the process gas flowing out of the channel can be fully and evenly mixed.

[0023] In a possible embodiment, an air inlet is provided on the top of the spray cavity, and the air inlet is communicated with the upper space; The spray device also includes an outer tube connected to the air inlet and an inner tube arranged in the outer tube. The inner tube extends into the upper space and is connected to the partition plate. The partition plate is provided with perforations, which are respectively connected to the inner tube and the lower space.

[0024] The beneficial effect is that by arranging an air inlet hole on the spray cavity, the upper space and the lower space can be ventilated separately through the outer tube and the inner tube of the inner and outer double tube structure.

[0025] In a possible embodiment, the spray device further includes: A first exhaust assembly is connected to the upper space and is used to exhaust the upper space; and / or, The second exhaust component is communicated with the lower space and is used for exhausting the lower space.

[0026] Its beneficial effect is that after the process gas is introduced, a purge gas needs to be introduced to purge the pipeline, the spray device and the reaction chamber. During the purge process, the upper space and the lower space are respectively exhausted by the first exhaust component and the second exhaust component to assist the exhaust, thereby saving the purge time and improving the purge efficiency and the purge effect.

[0027] The present invention also provides a deposition device, comprising: a spray device as in any of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the spray device of the present invention in another embodiment.

[0029] Figure 2 It is a partial enlarged view of the spray device of the present invention in one embodiment.

[0030] Figure 3It is a schematic diagram of the first guide plate in the spray device of the present invention.

[0031] Figure 4 It is a schematic diagram of the second guide plate in the spray device of the present invention.

[0032] Description of reference numerals: 110, spray chamber; 111, upper space; 1111, first sub-chamber; 112, lower space; 1121, second sub-chamber; 113, spray hole; 1131, first hole section; 1132, second hole section; 1133, third hole section; 114, slit; 1141, first slit portion; 1142, second slit portion; 115, air inlet; 120, partition plate; 121, perforation; 130, flow guide; 131, main body section; 132, variable diameter section; 1 40. channel; 141. first connecting section; 142. second connecting section; 150. first guide plate; 151. first guide hole; 160. second guide plate; 161. second guide hole; 1611. gap; 171. outer tube; 172. inner tube; 180. first exhaust assembly; 181. first exhaust cavity; 182. first exhaust pipe; 183. first exhaust member; 190. second exhaust assembly; 191. second exhaust cavity; 192. second exhaust pipe; 193. second exhaust member. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] In view of the problems existing in the prior art, the embodiments of the present invention provide a spray device and a deposition device, see Figure 1 and Figure 2The spray device includes a spray cavity 110, a partition plate 120 and a channel 140. The spray cavity 110 is hollow inside and has a plurality of spray holes 113 spaced apart at the bottom. The partition plate 120 is disposed in the spray cavity 110 and divides the space in the spray cavity 110 into an upper space 111 and a lower space 112. A plurality of flow guides 130 are provided at intervals on the bottom surface of the partition plate 120. The flow guides 130 are integrally formed with the partition plate 120 or fixedly connected. The flow guides 130 are arranged in a one-to-one correspondence with the spray holes 113. The flow guides 130 pass through the lower space 112 and extend into the corresponding spray holes 113. A slit 114 is formed between the flow guides 130 and the hole walls of the spray holes 113. The slit 114 is connected to the lower space 112. The channels 140 are arranged in a one-to-one correspondence with the flow guides 130. The channels 140 pass through the partition plate 120 and the flow guides 130, and the channels 140 are connected to the upper space 111.

[0035] The space in the spray chamber 110 is divided into an upper space 111 and a lower space 112 by a partition plate 120. A guide member 130 is arranged on the partition plate 120, and the guide member 130 extends into the corresponding spray hole 113. On the one hand, a slit 114 is formed between the guide member 130 and the hole wall of the spray hole 113, so that the process gas in the lower space 112 can enter the reaction chamber through the slit 114 at the spray hole 113; on the other hand, a channel 140 is arranged in the guide member 130, so that the process gas in the upper space 111 can enter the reaction chamber through the channel 140 on the guide member 130 located in the spray hole 113, thereby achieving a spray hole 113 that can circulate both the process gas in the upper space 111 and the process gas in the lower space 112. By optimizing the flow path of the process gas, the flow path of the process gas can be arranged more densely and evenly to avoid affecting the deposition rate and deposition uniformity.

[0036] In one embodiment, see Figure 1 , Figure 2 as well as Figure 3 , P first guide plates 150 are arranged in the upper space 111, and a plurality of first guide holes 151 are arranged at intervals on the first guide plates 150. When P is greater than 1, the P first guide plates 150 are spaced apart in the vertical direction, and the upper space 111 is divided into a plurality of first sub-chambers 1111 by the P first guide plates 150. The first guide holes 151 connect two adjacent first sub-chambers 1111, and P is a positive integer. It should be noted that the number, arrangement, and aperture size of the first guide holes 151 are not limited here, and can be flexibly set according to actual process requirements. For example, a plurality of first guide holes 151 are evenly spaced apart on the first guide plates 150 to ensure that the process gas in the upper space 111 can be evenly diffused.

[0037] The design of the first guide holes 151 allows the process gas to be diverted to different areas in the upper space 111 through a plurality of first guide holes 151 when flowing in the upper space 111. This diversion design avoids the phenomenon of process gas accumulation in local areas. The process gas in the upper space 111 can be evenly diffused in the spray device before entering the reaction chamber, thereby improving the uniformity of gas distribution.

[0038] In another embodiment, see Figure 1 , Figure 2 as well as Figure 4 , Q second guide plates 160 are provided in the lower space 112, a plurality of second guide holes 161 are provided at intervals on the second guide plates 160, the second guide holes 161 are arranged one-to-one with the guide members 130, the guide members 130 pass through the corresponding second guide holes 161, and a gap 1611 is formed between the guide members 130 and the hole walls of the second guide holes 161, when Q is greater than 1, the second guide plates 160 are spaced apart in the vertical direction, and the lower space 112 is divided into a plurality of second sub-chambers 1121 by the Q second guide plates 160, and two adjacent second sub-chambers 1121 are connected by the gap 1611, and Q is a positive integer. It should be noted that the number, arrangement and aperture size of the second guide holes 161 are not limited here and can be flexibly set according to actual process requirements. For example, several second guide holes 161 are evenly spaced on the second guide plate 160 to ensure that the process gas in the lower space 112 can be evenly diffused.

[0039] The second flow guide holes 161 are used to pass through the flow guide member 130 on the one hand, and are also used to circulate process gas on the other hand. When the process gas flows in the lower space 112, it is diverted to different areas in the lower space 112 through a plurality of second flow guide holes 161. This diversion design avoids the phenomenon of process gas accumulation in local areas. The process gas in the lower space 112 can be evenly diffused in the spray device before entering the reaction chamber, thereby improving the uniformity of gas distribution.

[0040] In a specific embodiment, see Figure 1 and Figure 2 There is one first guide plate 150 and one second guide plate 160, and the spray device forms a double-layer four-chamber structure, providing a larger diffusion space for the process gas.

[0041] In one embodiment, see Figure 2, there is a first distance H between the guide member 130 and the bottom surface of the spray chamber 110. In this embodiment, since there is a first distance H between the guide member 130 and the bottom surface of the spray chamber 110, that is, there is a distance between the bottom end of the guide member 130 and the opening of the spray hole 113 on the bottom surface of the spray chamber 110, this structural design allows the spray device to be applied not only to processing techniques in which process gases are introduced separately, for example, firstly, process gas is introduced into the lower space 112, and the process gas in the lower space 112 enters the reaction chamber through the slit 114 and the spray hole 113 located below the guide member 130, and after purging and exhausting, another process gas is introduced into the upper space 111, and the process gas in the upper space 111 The spray device can also be applied to a process in which two process gases are mixed and introduced, for example, different process gases are introduced into the lower space 112 and the upper space 111 at the same time, the process gas in the lower space 112 enters the spray hole 113 below the guide 130 through the slit 114, and the process gas in the upper space 111 enters the spray hole 113 below the guide 130 through the channel 140. The two process gases are mixed in the spray hole 113 below the guide 130 and then enter the reaction chamber. The introduction of the above process application scenario is only for illustration and is not intended to limit the actual process flow of the spray device.

[0042] Of course, in another embodiment, see Figure 1 The spray device can also be designed so that the bottom surface of the flow guide 130 and the bottom surface of the spray chamber 110 are located on the same horizontal plane. With this structural design, the spray device can be applied to processing techniques in which process gases are introduced separately, but it is impossible to achieve mixing of different process gases in the spray device. For example, the process gas is first introduced into the lower space 112, and the process gas in the lower space 112 enters the reaction chamber through the slit 114. After purging and exhausting, another process gas is introduced into the upper space 111, and the process gas in the upper space 111 enters the reaction chamber through the channel 140. The introduction of the above process application scenarios is only for illustration and is not intended to limit the actual process flow of the spray device.

[0043] In one embodiment, see Figure 2The spray hole 113 includes a first hole section 1131 connected to the lower space 112 and a second hole section 1132 connected to the first hole section 1131. The aperture of the second hole section 1132 is smaller than that of the first hole section 1131. The flow guide 130 is located in the first hole section 1131. In this embodiment, for the processing technology in which two process gases are mixed and introduced, the process gas in the lower space 112 enters the second hole section 1132 through the first hole section 1131, and the process gas in the upper space 111 enters the second hole section 1132 through the channel 140. The two process gases are mixed at the second hole section 1132 and then enter the reaction chamber. By designing the aperture of the second hole section 1132 to be smaller than the aperture of the first hole section 1131, when the aperture is reduced, according to the basic principle of fluid mechanics, the flow rate of the process gas will be subject to certain restrictions, so that the two process gases can be more fully and evenly mixed in the second hole section 1132.

[0044] In one embodiment, see Figure 2 The spray hole 113 also includes a third hole section 1133 connected between the first hole section 1131 and the second hole section 1132, and the aperture of the third hole section 1133 gradually decreases from the first hole section 1131 to the second hole section 1132. In this embodiment, the apertures of the first hole section 1131 and the second hole section 1132 remain unchanged, and the aperture of the second hole section 1132 is smaller than the aperture of the first hole section 1131. The third hole section 1133 with a changing aperture is arranged between the first hole section 1131 and the second hole section 1132, so that the process gas can gradually adapt to the change of the aperture, avoiding a sudden change in the flow rate of the process gas, making the flow of the process gas more stable, and avoiding turbulence and eddy current phenomena.

[0045] In one embodiment, see Figure 2The guide member 130 includes a main body section 131 disposed on the bottom surface of the partition plate 120 and a diameter-reducing section 132 disposed at the bottom end of the main body section 131. The cross-sectional size of the diameter-reducing section 132 gradually decreases from one end close to the main body section 131 to one end away from the main body section 131. The main body section 131 is located in the first hole section 1131, and a first slit portion 1141 of the slit 114 is formed between the main body section 131 and the hole wall of the first hole section 1131. The diameter-reducing section 132 is located in the third hole section 1133, and a second slit portion 1142 of the slit 114 is formed between the diameter-reducing section 132 and the hole wall of the third hole section 1133. In this embodiment, the diameter-reducing section 132 of the guide member 130 is designed to be compatible with the gradually decreasing hole diameter of the third hole section 1133. When the process gas flows from the first hole section 1131 to the second hole section 1132, the process gas first passes through the first wide slot portion 1141 between the main body section 131 and the hole wall of the first hole section 1131, then enters the second slot portion 1142 that gradually narrows between the diameter-reducing section 132 and the hole wall of the third hole section 1133, and then enters the second hole section 1132. Since the cross-sectional size of the diameter-reducing section 132 gradually decreases, the flow velocity of the process gas can change smoothly when passing through the third hole section 1133, thereby ensuring the smoothness of the flow of the process gas and avoiding turbulence and eddy current.

[0046] In a specific embodiment, see Figure 2 The first hole section 1131 and the second hole section 1132 are circular holes, the main body section 131 is columnar, and the third hole section 1133 and the diameter-changing section 132 are inverted truncated cone shapes.

[0047] In one embodiment, see Figure 2 , there is a second spacing L between the guide member 130 and the second hole section 1132. Here, it can be understood that there is a second spacing L between the bottom end of the guide member 130 and the inlet at the top end of the second hole section 1132. After the process gas flows out of the channel 140, it enters the space at the second spacing L. The process gas flowing out of the slit 114 enters the space at the second spacing L. The space at the second spacing L serves as a preliminary mixing point for the process gas flowing out of the slit 114 and the process gas flowing out of the channel 140. According to the aforementioned embodiment, the space at the second spacing L here can be the bottom of the first hole section 1131 or the bottom of the third hole section 1133. Since the apertures of the first hole section 1131 and the third hole section 1133 are both larger than the aperture of the second hole section 1132, the larger space at the second spacing L increases the chances of mutual collision between the molecules of the process gas, and promotes preliminary uniform mixing between different process gases. Then, the process gases after preliminary mixing enter the second hole section 1132 with a smaller hole diameter for further mixing, thereby ensuring that the process gases can be mixed more fully and evenly.

[0048] In one embodiment, see Figure 2The channel 140 includes a first connecting section 141 and a second connecting section 142 that are connected to each other. The first connecting section 141 is connected to the upper space 111 , and the second connecting section 142 is connected to the spray hole 113 . The aperture of the first connecting section 141 is larger than that of the second connecting section 142 . In this embodiment, for the processing technology in which two process gases are mixed and introduced, due to the gradual decrease in the aperture of the third hole segment 1133 and the small aperture design of the second hole segment 1132, when the aperture is reduced, the flow rate of the process gas flowing out of the slit 114 will be subject to a certain restriction. In order to ensure that the two process gases are mixed in a certain set ratio, the channel 140 is designed as a first connecting section 141 with a larger aperture and a second connecting section 142 with a smaller aperture to cooperate with the variable diameter design of the spray hole 113, thereby ensuring that the process gas flowing out of the slit 114 and the process gas flowing out of the channel 140 reach a preset ratio in terms of flow rate, thereby achieving the mixing of the two process gases in the set ratio, and also ensuring that the process gas flowing out of the slit 114 and the process gas flowing out of the channel 140 can be fully and evenly mixed.

[0049] In a specific embodiment, see Figure 2 The top end of the first connecting section 141 is located on the top surface of the partition plate 120, the bottom end of the first connecting section 141 is located at the connection between the main section 131 and the reducing section 132 or is arranged close to the connection between the main section 131 and the reducing section 132, the top end of the second connecting section 142 is connected to the bottom end of the first connecting section 141, and the bottom end of the second connecting section 142 is located on the bottom surface of the reducing section 132.

[0050] In one embodiment, see Figure 1An air inlet hole 115 is provided at the top of the spray cavity 110, and the air inlet hole 115 is connected to the upper space 111. The spray device also includes an outer tube 171 connected to the air inlet hole 115 and an inner tube 172 arranged in the outer tube 171. The outer tube 171 and the inner tube 172 are concentrically arranged. The inner tube 172 extends into the upper space 111 and is connected to the partition plate 120. The partition plate 120 is provided with a through hole 121, and the through hole 121 is respectively connected to the inner tube 172 and the lower space 112. In this embodiment, the outer tube 171 and the inner tube 172 constitute an inner and outer double-layer tube structure, and only one air inlet hole 115 is required to be set on the spray chamber 110. The outer tube 171 and the inner tube 172 are arranged at the air inlet hole 115. Since the air inlet hole 115 is connected to the upper space 111, the outer tube 171 is connected to the air inlet hole 115, and a process gas is introduced into the air inlet hole 115 through the outer tube 171, so that the upper space 111 can be ventilated separately; since the inner tube 172 extends into the upper space 111 and the inner tube 172 is connected to the lower space 112 through the perforation 121, another process gas is introduced into the inner tube 172, and the other process gas enters the lower space 112 through the perforation 121, so that the lower space 112 can be ventilated separately. Therefore, the upper space 111 and the lower space 112 can be ventilated separately through one air inlet 115 and the inner and outer double-layer tube structure, thereby simplifying the structure of the ventilation system.

[0051] In one embodiment, see Figure 1 The spray device further includes: a first exhaust assembly 180, which is connected to the upper space 111 and is used to exhaust the upper space 111; and / or a second exhaust assembly 190, which is connected to the lower space 112 and is used to exhaust the lower space 112. In this embodiment, the first exhaust assembly 180 and the second exhaust assembly 190 are arranged on the spray chamber 110, and the upper space 111 and the lower space 112 are exhausted separately by the first exhaust assembly 180 and the second exhaust assembly 190, respectively. This layered exhaust design can, on the one hand, significantly improve the purge efficiency, so that the residual gas can be discharged faster, thereby shortening the purge time; on the other hand, it avoids the residual gas from remaining in the spray chamber 110, thereby improving the purge effect.

[0052] In a specific embodiment, see Figure 1 In the case where the spray device also includes a first exhaust component 180, the first exhaust component 180 includes: a first exhaust chamber 181 arranged in the spray chamber 110 and connected to the upper space 111, a first exhaust pipe 182 connected to the first exhaust chamber 181, and a first exhaust member 183 connected to the first exhaust pipe 182 and used for exhausting air.

[0053] In another specific embodiment, see Figure 1In the case where the spray device also includes a second exhaust component 190, the second exhaust component 190 includes: a second exhaust chamber 191 arranged in the spray chamber 110 and connected to the lower space 112, a second exhaust pipe 192 connected to the second exhaust chamber 191, and a second exhaust member 193 connected to the second exhaust pipe 192 and used for exhausting air.

[0054] The present invention also provides a deposition device, for example, the semiconductor device is an atomic layer deposition (ALD) device, a chemical vapor deposition (CVD) device, or a plasma enhanced chemical vapor deposition (PECVD) device, and the deposition device includes: a spray device as in any of the above embodiments.

[0055] The process flow of applying the spray device of the present invention to a deposition device is explained in detail below in conjunction with specific embodiments.

[0056] Taking the application of the spray device of the present invention to ALD equipment as an example, a precursor gas is introduced into the inner tube 172, and a purge gas (for example, an inert gas) is introduced into the outer tube 171 to balance the gas pressure, wherein the precursor gas enters the lower space 112 through the perforation 121 on the partition plate 120, and the precursor gas is evenly diffused through the second guide hole 161 on the second guide plate 160, and the precursor gas enters the reaction chamber through the slit 114 and the second hole segment 1132 for reaction, and the precursor gas molecules are adsorbed on the surface of the substrate; the purge gas of the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second hole segment 1132. After the precursor gas is introduced, a purge gas is introduced into the inner tube 172 to purge the remaining precursor gas, and at the same time, the purge gas continues to be introduced into the outer tube 171, wherein the purge gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second hole section 1132, and the purge gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second hole section 1132, and at the same time, the first exhaust component 180 and the second exhaust component 190 are opened to accelerate the exhaust. After the purging is completed, the reaction gas is introduced into the outer tube 171, and the purge gas is continued to be introduced into the inner tube 172, wherein the reaction gas enters the upper space 111, and is evenly diffused through the first guide hole 151 on the first guide plate 150, and the reaction gas enters the reaction chamber through the channel 140 and the second hole segment 1132, and the reaction gas molecules react chemically with the precursor molecules on the surface of the substrate to form a single-layer atomic film; the purge gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second hole segment 1132. After the reaction gas is introduced, the purge gas is introduced into the outer tube 171 to purge the remaining reaction gas, and the purge gas is continuously introduced into the inner tube 172, wherein the purge gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second hole section 1132, and the purge gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second hole section 1132, and the first exhaust assembly 180 and the second exhaust assembly 190 are opened to accelerate exhaust. According to the above steps, the precursor gas and the reaction gas are introduced by circulation until the desired film is obtained. After the reaction is completed, the clean gas excited by the remote plasma source is introduced into the inner tube 172 and the outer tube 171. The clean gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second hole section 1132. The clean gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second hole section 1132. At the same time, the first exhaust component 180 and the second exhaust component 190 are turned on to accelerate the exhaust, and the exhaust device of the reaction chamber is turned on to exhaust gas, so as to clean the spray device and the reaction chamber.

[0057] Taking the application of the spray device of the present invention to CVD equipment as an example, the precursor gas is introduced into the inner tube 172 and the reaction gas is introduced into the outer tube 171 at the same time, the precursor gas enters the lower space 112 through the perforation 121 on the partition plate 120, and the precursor gas is evenly diffused through the second guide hole 161 on the second guide plate 160, the precursor gas enters the second hole section 1132 through the slit 114, the reaction gas enters the upper space 111, and the reaction gas is evenly diffused through the first guide hole 151 on the first guide plate 150, and the reaction gas enters the second hole section 1132 through the channel 140, the precursor gas and the reaction gas are mixed at the second hole section 1132, and then enter the reaction chamber to react and be deposited on the substrate. After the reaction is completed, the clean gas excited by the remote plasma source is introduced into the inner tube 172 and the outer tube 171. The clean gas in the inner tube 172 enters the reaction chamber through the lower space 112, the slit 114, and the second hole section 1132. The clean gas in the outer tube 171 enters the reaction chamber through the upper space 111, the channel 140, and the second hole section 1132. At the same time, the first exhaust component 180 and the second exhaust component 190 are turned on to accelerate the exhaust, and the exhaust device of the reaction chamber is turned on to exhaust gas, so as to clean the spray device and the reaction chamber.

[0058] It should be noted that the introduction of the above process application scenarios is only for illustration and is not intended to limit the actual process flow of the spray device.

[0059] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0060] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0061] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0062] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by those with ordinary skills in the field to which the present invention belongs.

Claims

1. A spray device, characterized in that: include: The spray cavity is hollow inside and has a plurality of spray holes spaced apart at the bottom; a partition plate, which is arranged in the spray cavity and divides the space in the spray cavity into an upper space and a lower space, a plurality of flow guides are arranged at intervals on the bottom surface of the partition plate, the flow guides are arranged in one-to-one correspondence with the spray holes, the flow guides pass through the lower space and extend into the corresponding spray holes, a slit is formed between the flow guide and the hole wall of the spray hole, and the slit is communicated with the lower space; A channel is arranged in one-to-one correspondence with the guide member, the channel passes through the partition plate and the corresponding guide member, and the channel is communicated with the upper space.

2. The spray device according to claim 1, characterized in that: P first guide plates are arranged in the upper space, and a plurality of first guide holes are arranged at intervals on the first guide plates. When P is greater than 1, the P first guide plates are spaced apart in the vertical direction, and P is a positive integer.

3. The spray device according to claim 1, characterized in that: Q second guide plates are arranged in the lower space, a plurality of second guide holes are arranged at intervals on the second guide plates, the second guide holes are arranged in one-to-one correspondence with the guide members, the guide members pass through the corresponding second guide holes and a gap is formed between the guide members and the hole walls of the second guide holes, when Q is greater than 1, the second guide plates are spaced apart in the vertical direction, and Q is a positive integer.

4. The spray device according to claim 1, characterized in that: There is a first distance between the flow guide and the bottom surface of the spray cavity.

5. The spray device according to claim 4, characterized in that: The spray hole comprises a first hole segment connected to the lower space and a second hole segment connected to the first hole segment, wherein the aperture of the second hole segment is smaller than the aperture of the first hole segment; The flow guide is located in the first hole section.

6. The spray device according to claim 5, characterized in that: The spray hole further includes a third hole segment connected between the first hole segment and the second hole segment, and the aperture of the third hole segment gradually decreases from the first hole segment to the second hole segment.

7. The spray device according to claim 6, characterized in that: The guide member comprises a main body section arranged on the bottom surface of the partition plate and a diameter-changing section arranged at the bottom end of the main body section, and the cross-sectional size of the diameter-changing section gradually decreases from one end close to the main body section to one end far away from the main body section; The main body section is located in the first hole section, and a first slit portion of the slit is formed between the main body section and the hole wall of the first hole section; The diameter-changing section is located in the third hole section, and a second slit portion of the slit is formed between the diameter-changing section and the hole wall of the third hole section.

8. The spray device according to claim 5, characterized in that: A second distance is provided between the flow guide and the second hole segment.

9. The spray device according to claim 4, characterized in that: The channel comprises a first communicating section and a second communicating section which are connected to each other, the first communicating section is connected to the upper space, and the second communicating section is connected to the spray hole; The aperture of the first connecting section is larger than the aperture of the second connecting section.

10. The spray device according to any one of claims 1 to 9, characterized in that: An air inlet is provided at the top of the spray cavity, and the air inlet is communicated with the upper space; The spray device also includes an outer tube connected to the air inlet and an inner tube arranged in the outer tube. The inner tube extends into the upper space and is connected to the partition plate. The partition plate is provided with perforations, which are respectively connected to the inner tube and the lower space.

11. The spray device according to any one of claims 1 to 9, characterized in that: Also includes: a first exhaust assembly, connected to the upper space and used to exhaust the upper space; and / or, The second exhaust component is communicated with the lower space and is used for exhausting the lower space.

12. A deposition device, characterized in that: include: A spray device as claimed in any one of claims 1 to 11.

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