Three-band infrared temperature measurement method, temperature monitoring method and computing equipment

Abstract

The invention provides a three-band infrared temperature measurement method, a temperature monitoring method and computing equipment, and the method comprises the steps: determining a first group of parameter values, used for a first temperature interval, of a radiation formula under a first wavelength; under a second wavelength, determining a second group of parameter values of the radiation formula for a second temperature interval; under a third wavelength, determining a third group of parameter values for a third temperature interval of the radiation formula; and respectively applying the first group of parameter values, the second group of parameter values and the third group of parameter values to temperature measurement of the first temperature interval, the second temperature interval and the third temperature interval. According to the technical scheme of the invention, more accurate three-waveband temperature measurement is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of temperature measurement, and in particular to a three-band infrared temperature measurement method, a temperature monitoring method and a computing device. Background Art

[0002] Infrared temperature measurement technology is widely used in various fields such as steel smelting, ceramic sintering, fire prediction, new material research, etc. due to its advantages such as non-contact, fast temperature measurement speed and wide temperature measurement range.

[0003] The existing temperature standards are all calibrated by the black body of the relevant national measurement units. The black body is an object with the maximum emissivity and absorptivity, and does not exist in nature. The emissivity of various actual measured objects is smaller than that of the black body, so the emissivity correction must be performed.

[0004] The emissivity correction method was first used in the late 19th century and is still in use today. However, the difficulty with the existing emissivity correction method is that the emissivity of the object being measured varies with complex factors such as the material composition, surface state, wavelength, radiation temperature, radiation conditions, and surrounding environment of the object, making it difficult to give an accurate value. This limits the temperature measurement accuracy of traditional infrared thermometers.

[0005] At present, the measurement accuracy of the emissivity correction method can only reach 1% of the temperature of the object being measured. In addition, when there are windows, copper slag and other attachments in front of the object being measured, the emissivity correction method will also cause a large error in the temperature measurement.

[0006] Therefore, a technical solution is needed to achieve high-precision infrared temperature measurement. Summary of the invention

[0007] The present invention aims to provide a three-band infrared temperature measurement method, a temperature monitoring method and a computing device, so as to realize three-band temperature measurement and meet the high-precision requirements of temperature measurement.

[0008] According to one aspect of the present invention, a three-band infrared temperature measurement method is proposed, the method comprising:

[0009] Determining a first set of parameter values ​​of a radiation formula for a first temperature interval at a first wavelength;

[0010] Determining a second set of parameter values ​​of the radiation formula for a second temperature interval at a second wavelength;

[0011] Determining a third set of parameter values ​​of the radiation formula for a third temperature interval at a third wavelength;

[0012] The first group of parameter values, the second group of parameter values, and the third group of parameter values ​​are used for temperature measurement in the first temperature interval, the second temperature interval, and the third temperature interval, respectively.

[0013] According to some embodiments, the first temperature interval, the second temperature interval and the third temperature interval adjacent to each other are determined by a first temperature, a second temperature, a third temperature and a fourth temperature.

[0014] According to some embodiments, the radiation formula is

[0015]

[0016] In the formula, is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ and δ are the emissivity coefficients as parameters, and the unit of γ is watt cm 2 , the unit of δ is cm·K.

[0017] According to some embodiments, the first set of parameter values, the second set of parameter values ​​and the third set of parameter values ​​are determined by:

[0018] calculating the first set of parameter values ​​by a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature;

[0019] calculating the second set of parameter values ​​by using the second radiation intensity and the third radiation intensity obtained at the third temperature;

[0020] The third set of parameter values ​​is calculated using the third radiation intensity and a fourth radiation intensity obtained at the fourth temperature.

[0021] According to some embodiments, the first temperature range is 30°C to 100°C, the second temperature range is 100°C to 800°C, and the third temperature range is 800°C to 2500°C.

[0022] According to some embodiments, the first wavelength, the second wavelength and the third wavelength are the same.

[0023] According to some embodiments, the first wavelength, the second wavelength and the third wavelength are different from each other.

[0024] According to some embodiments, the first wavelength, the second wavelength, and the third wavelength are determined by:

[0025] determining a fifth temperature, a sixth temperature, and a seventh temperature within the first temperature interval, the second temperature interval, and the third temperature interval, respectively;

[0026] Changing the wavelength at the fifth temperature, the sixth temperature and the seventh temperature respectively to obtain a first relationship curve, a second relationship curve and a third relationship curve between the radiation intensity and the radiation wavelength;

[0027] The wavelengths corresponding to the points where the product of the curvature and the rate of change of the curvature is the smallest on the first relationship curve, the second relationship curve, and the third relationship curve are determined as the first wavelength, the second wavelength, and the third wavelength, respectively.

[0028] According to another aspect of the present invention, a temperature monitoring method for a semiconductor process or a sintering process is provided, comprising the three-band infrared temperature measurement method as described in any one of the above items.

[0029] According to another aspect of the present invention, there is provided a computing device, comprising:

[0030] Processor; and

[0031] A memory storing a computer program, which, when executed by the processor, enables the processor to execute any of the methods described above.

[0032] According to an embodiment of the present invention, the parameter values ​​of the radiation formula in the first temperature interval, the second temperature interval and the third temperature interval are determined respectively. Considering that the radiation characteristics of the material in different temperature intervals are different, by separately determining the parameter values ​​of the radiation formula for each temperature interval, it can be ensured that the measurement results within the temperature range are more accurate. The first group of parameter values, the second group of parameter values ​​and the third group of parameter values ​​are set for the temperature measurement of the first temperature interval, the second temperature interval and the third temperature interval respectively. Each temperature interval has its specific radiation characteristics. By customizing a set of parameter values ​​for each temperature interval, it can be ensured that these parameters optimally match the physical phenomena in the interval, thereby improving the measurement accuracy. Using parameter values ​​optimized for a specific temperature interval can more accurately reflect the actual situation and reduce the errors caused by assumptions or general values.

[0033] According to some embodiments, a first temperature interval (low temperature section), a second temperature range (medium temperature section) and a third temperature range (high temperature section) are set to form a three-band temperature measurement interval. The first temperature interval, the second temperature interval and the third temperature interval adjacent to each other are determined by the first temperature, the second temperature, the third temperature and the fourth temperature. The sampling speed is fast and the temperature measurement range is wide. It is possible to measure low temperature, medium temperature and high temperature three-band measurements on one device. The transition from low temperature to high temperature is smoother and more natural, which is helpful for data analysis and processing.

[0034] It is to be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for describing the embodiments are briefly introduced below.

[0036] Figure 1A flow chart of a method for three-band infrared temperature measurement according to an example embodiment is shown.

[0037] Figure 2 A graph showing absolute temperature and relative radiation intensity in a first temperature interval according to some embodiments.

[0038] Figure 3 A graph showing absolute temperature and relative radiation intensity in a second temperature interval according to some embodiments.

[0039] Figure 4 A graph showing absolute temperature and relative radiation intensity in a third temperature interval according to some embodiments.

[0040] Figure 5 A graph showing absolute temperature and relative radiation intensity over a full temperature range according to some embodiments.

[0041] Figure 6 A schematic diagram of a three-band infrared temperature measurement system according to an example embodiment is shown.

[0042] Figure 7 A block diagram of a computing device is shown according to an exemplary embodiment. DETAILED DESCRIPTION

[0043] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar parts, and thus their repeated description will be omitted.

[0044] In addition, the described features, structures or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present invention. However, those skilled in the art will appreciate that the technical solution of the present invention can be practiced without one or more of the specific details, or other methods, components, devices, steps, etc. may be adopted. In other cases, known methods, devices, implementations or operations are not shown or described in detail to avoid blurring various aspects of the present invention.

[0045] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities may be implemented in software form, or in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0046] The flowcharts shown in the accompanying drawings are only exemplary and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps can be decomposed, and some operations / steps can be combined or partially combined, so the actual execution order may change according to actual conditions.

[0047] It should be understood that although the terms first, second, third, etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one component from another component. Therefore, the first component discussed below can be referred to as the second component without departing from the teachings of the present inventive concept. As used herein, the term "and / or" includes any one of the associated listed items and all combinations of one or more.

[0048] Those skilled in the art will appreciate that the drawings are merely schematic diagrams of example embodiments, and the modules or processes in the drawings are not necessarily necessary for implementing the present invention, and therefore cannot be used to limit the protection scope of the present invention.

[0049] Infrared temperature measurement technology has been used for many years, but the existing technology has low measurement accuracy, and the measurement accuracy can only reach 1% of the measured value. Another problem with infrared temperature measurement technology is that the physical properties and technical implementation methods are different in different temperature ranges.

[0050] The existing temperature standards are all calibrated by the black body of the relevant national measurement units. A black body is an object with the maximum emissivity and absorptivity. The emissivity of various actual measured objects is smaller than that of a black body, so the emissivity correction must be performed.

[0051] The physical model of an ideal black body is described by Planck's formula:

[0052] ε(λ,T)=C1λ -5 ﹝exp(C2 / λT)-1﹞ -1

[0053] Where ε(λ, T) is the blackbody radiation spectral power intensity, unit is watt cm 2 Micrometer -1 ; C1=3.74×10 -12 is the first radiation constant, in watts per centimeter 2 ; C2 = 1.43 cm·K, which is the second radiation constant; λ is the wavelength of spectral radiation, in micrometers; T is the blackbody temperature, in K.

[0054] In Planck's temperature measurement formula, C1 and C2 are only two constant terms applicable when the radiator is a black body. At any temperature, the power of black body radiation changes continuously with wavelength. As the temperature increases, the wavelength corresponding to the maximum value of the radiation power decreases, indicating that as the temperature increases, the proportion of the short-wave portion contained in the black body radiation increases. This radiation characteristic has nothing to do with the material of the black body and only depends on the absolute temperature of the black body. The inventors have discovered that these two constants can be changed into variables that vary with factors such as the material composition, properties, and shape of the radiator, and the concept of the emissivity coefficient as a parameter is introduced. The temperature measurement formula still retains the core of the Planck formula, that is, the temperature measurement formula of the present invention is a creative extension of the Planck formula.

[0055] With the development of science and technology, magnetic field can be measured in Gauss and electric current can be measured in picoampere (10 -12 Ampere), time can be measured to femtoseconds (10 -15 However, the temperature can only be measured between 0.1℃ and 1℃. The existing infrared temperature measurement technology is no longer suitable for the temperature requirements of various fields in today's rapid development.

[0056] To this end, the present invention proposes a three-band infrared temperature measurement method to solve the problem of continuous temperature measurement in low, medium and high temperature ranges and achieve high-precision temperature measurement.

[0057] Exemplary embodiments of the present invention are described below with reference to the accompanying drawings.

[0058] The traditional infrared temperature measurement method is to measure the temperature based on the spectral radiation power of black body radiation at a certain temperature. It usually needs to consider the aperture distance coefficient (D / S), and it is difficult to change the detection distance, field of view angle, etc. The temperature measurement range is narrow and needs to be measured in sections, such as low temperature, medium temperature, high temperature, etc., and is easily disturbed by flames, smoke, etc.

[0059] Because it is difficult to accurately give the value of the spectral radiation power intensity of the actual object being measured, this limits the temperature measurement accuracy. In addition to the low temperature measurement accuracy, the conventional method measures the temperature in sections, and the temperature values ​​measured by different thermometers are not continuous, making it difficult to unify and continuously control the temperature. This is because the emissivity correction values ​​between various temperature sections, such as high temperature (>1000℃) and medium temperature (600℃~1000℃), are also difficult to effectively connect, so the current traditional thermometers are all carried out in sections, that is, high temperature, medium temperature, and low temperature.

[0060] In addition, the current infrared temperature measurement, due to the use of emissivity correction scheme, has low temperature measurement accuracy, which can only reach 1% of the measured value, which is not compatible with the development of modern science and technology. For example, a high-frequency heating crystal growth furnace requires strict automatic temperature control, with a temperature control accuracy of a few tenths of a degree, and the measurement range must cover all temperature sections of low, medium and high temperatures.

[0061] The present invention is based on an extension of Planck's formula and is particularly suitable for materials whose emissivity is difficult to accurately determine or whose emissivity varies with temperature.

[0062] Figure 1 A flow chart of a method for three-band infrared temperature measurement according to an example embodiment is shown.

[0063] See also Figure 1 , at S101 , at a first wavelength, a first set of parameter values ​​of a radiation formula for a first temperature interval is determined.

[0064] According to some embodiments, the temperature in different temperature intervals is calculated using a radiation formula, and the radiation formula is:

[0065]

[0066] In the formula, is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ and δ are the emissivity coefficients as parameters, and the unit of γ is watt cm 2 , the unit of δ is cm·K.

[0067] The coefficients γ and δ are parameters related to factors such as the material composition and properties of the object, the radiation wavelength, etc., and are also referred to as emissivity coefficients in this article.

[0068] At a first wavelength, a first set of parameter values ​​for a first temperature interval of a radiation formula is determined. The first temperature interval is determined by a first temperature and a second temperature, and the first set of parameter values ​​is calculated by a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature. For example, the first temperature is 30°C and the second temperature is 100°C, and the first temperature interval is 30°C to 100°C.

[0069] The first set of parameter values ​​is determined by calculating the first set of parameter values ​​by using the first radiation intensity obtained at the first temperature and the second radiation intensity obtained at the second temperature. The first set of parameter values ​​are first emissivity coefficients γ1 and δ1.

[0070] According to some embodiments, in a first temperature range of low temperature (30°C to 100°C), when the radiation temperature of the object is measured to be 30°C, at a certain radiation wavelength, the radiation intensity of the object is measured to be At the same radiation wavelength, when the radiation temperature of the object is 100°C, the radiation intensity of the object is measured to be Will and Substituting into the temperature measurement calculation formula, we get:

[0071]

[0072] By combining the above two equations, we can solve the values ​​of the emissivity coefficients γ1 and δ1 at 30℃~100℃.

[0073] The emissivity coefficient varies with the composition, shape, radiation temperature and wavelength of the radiating object. The first emissivity coefficient is determined by the radiation intensity and wavelength in the first temperature range. Substituting the values ​​of γ1 and δ1 into the temperature measurement calculation formula, the corresponding relationship between the radiation intensity and temperature of the object in the low temperature range of 30℃ to 100℃ is obtained.

[0074]

[0075] In the formula, is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ1, δ1 are the first emissivity coefficients, and the unit of γ1 is watt cm 2 , the unit of δ1 is cm·K.

[0076] At S103, at a second wavelength, a second set of parameter values ​​of the radiation formula for a second temperature interval is determined.

[0077] According to some embodiments, the second temperature interval is determined by the second temperature and the third temperature, and the second set of parameter values ​​is calculated by the second radiation intensity obtained at the second temperature and the third radiation intensity obtained at the third temperature. For example, the second temperature is 100°C, the third temperature is 800°C, and the second temperature interval is 100°C to 800°C.

[0078] A second set of parameter values ​​of the radiation equation for a second temperature interval is determined at a second wavelength.

[0079] The second set of parameter values ​​is determined by calculating the first set of parameter values ​​by the second radiation intensity obtained at the second temperature and the third radiation intensity obtained at the third temperature. The second set of parameter values ​​is the second emissivity coefficients γ2 and δ2.

[0080] According to some embodiments, in a second temperature range of medium temperature (100°C to 800°C), at a certain radiation wavelength, when the temperature of the irradiated object is 800°C, the measured radiation intensity is When the radiation temperature of the object is 100°C, we get Substitute into the temperature measurement calculation formula and combine to get:

[0081]

[0082] Solve for the values ​​of the emissivity coefficients γ2 and δ2 corresponding to the temperature range of 100℃ to 800℃.

[0083] The second emissivity coefficient is determined by the radiation intensity and wavelength in the second temperature range. Substituting the values ​​of γ2 and δ2 into the temperature measurement calculation formula, the corresponding relationship between the radiation intensity and temperature of the object in the medium temperature range of 100℃ to 800℃ is obtained.

[0084]

[0085] In the formula, is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ2, δ2 are the second emissivity coefficients, and the unit of γ2 is watt cm 2 , the unit of δ2 is cm·K.

[0086] At S105 , at a third wavelength, a third set of parameter values ​​of the radiation formula for a third temperature interval is determined.

[0087] According to some embodiments, the third temperature interval is determined by the third temperature and the fourth temperature, and the third set of parameter values ​​is calculated by the third radiation intensity obtained at the third temperature and the fourth radiation intensity obtained at the fourth temperature. For example, the third temperature is 800°C, the fourth temperature is 2500°C, and the second temperature interval is 800°C to 2500°C.

[0088] At a third wavelength, a third set of parameter values ​​of the radiation equation for a third temperature interval is determined.

[0089] According to some embodiments, the third set of parameter values ​​is determined by calculating the third set of parameter values ​​by the third radiation intensity and the fourth radiation intensity obtained at the fourth temperature. The third set of parameter values ​​is the third emissivity coefficients γ3 and δ3.

[0090] According to some embodiments, in a third temperature range of high temperature (800°C to 2500°C), at a certain radiation wavelength, when the temperature of the irradiated object is 2500°C, the measured radiation intensity is When the radiation temperature of the object is 800℃, Substitute into the temperature measurement calculation formula and combine to get:

[0091]

[0092] Solve for the values ​​of the emissivity coefficients γ3 and δ3 corresponding to the temperature range of 800℃ to 2500℃.

[0093] The third emissivity coefficient is determined by the radiation intensity and wavelength in the third temperature range. Substituting the values ​​of γ3 and δ3 into the temperature measurement calculation formula, the corresponding relationship between the radiation intensity and temperature of the object in the high temperature range of 800℃~2500℃ and above to 3000℃ is obtained.

[0094]

[0095] In the formula, is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ3, δ3 are the third emissivity coefficients, and the unit of γ3 is watt cm 2 , the unit of δ3 is cm·K.

[0096] In S107, the first group of parameter values, the second group of parameter values, and the third group of parameter values ​​are used for temperature measurement in the first temperature interval, the second temperature interval, and the third temperature interval, respectively.

[0097] Different emissivity coefficients are set according to different temperature intervals, the temperature intervals may include a first temperature interval, a second temperature interval and a third temperature interval, the first group of parameter values, the second group of parameter values ​​and the third group of parameter values ​​include a first emissivity coefficient, a second emissivity coefficient and a third emissivity coefficient. The first emissivity coefficient, the second emissivity coefficient and the third emissivity coefficient correspond to the first temperature interval, the second temperature interval and the third temperature interval respectively.

[0098] The first group of parameter values, the second group of parameter values ​​and the third group of parameter values ​​are used for temperature measurement in the first temperature interval, the second temperature interval and the third temperature interval respectively. There are overlapping temperature points in two adjacent temperature intervals of the first temperature interval, the second temperature interval and the third temperature interval to ensure the continuity of the three-band infrared temperature measurement.

[0099] According to some embodiments, the radiation intensity under different temperature ranges is obtained, and the first wavelength, the second wavelength and the third wavelength are the same. That is, the first radiation intensity obtained Second radiation intensity The third radiation intensity and the fourth radiation intensity The λ value in can be a fixed value.

[0100] According to some embodiments, the radiation intensity under different temperature ranges is obtained, and the first wavelength, the second wavelength and the third wavelength are the same. That is, the first radiation intensity obtained is Second radiation intensity The third radiation intensity and the fourth radiation intensity The λ value in is variable and is selected according to different temperature ranges.

[0101] The first radiation intensity and the second radiation intensity correspond to the first temperature interval, the second radiation intensity and the third radiation intensity correspond to the second temperature interval, and the third radiation intensity and the fourth radiation intensity correspond to the third temperature interval.

[0102] In this exemplary embodiment, the first emissivity coefficient is calculated by using the first radiation intensity and the second radiation intensity. The first emissivity coefficient is applied to a first temperature interval. Solving the first emissivity coefficient can determine the relationship between the radiation intensity and the temperature in the first temperature interval.

[0103] The second emissivity coefficient is calculated by using the second radiation intensity and the third radiation intensity. The second emissivity coefficient is applied to a second temperature range. The relationship between the radiation intensity and the temperature in the second temperature range can be determined by solving the second emissivity coefficient.

[0104] The third emissivity coefficient is calculated by the third radiation intensity and the fourth radiation intensity, and the third emissivity coefficient is applied to a third temperature range. The relationship between the radiation intensity and the temperature in the third temperature range can be determined by solving the third emissivity coefficient.

[0105] It is easy to understand that for each temperature range, multiple groups of emissivity coefficient values ​​can be obtained using multiple temperatures and stored in the database. During actual temperature measurement, the corresponding emissivity coefficient values ​​can be obtained from the database based on the measured temperature and temperature change for temperature measurement calculation.

[0106] According to example embodiments, in the case where the first wavelength, the second wavelength, and the third wavelength are different from each other, the first wavelength, the second wavelength, and the third wavelength may also be determined in the following manner.

[0107] The fifth temperature, the sixth temperature and the seventh temperature in the first temperature interval, the second temperature interval and the third temperature interval are determined respectively, and the wavelength is changed at the fifth temperature, the sixth temperature and the seventh temperature respectively to obtain the first relationship curve, the second relationship curve and the third relationship curve between the radiation intensity and the radiation wavelength. The wavelength corresponding to the point where the product of the curvature and the rate of change of the curvature is the smallest on the first relationship curve, the second relationship curve and the third relationship curve is determined respectively as the first wavelength, the second wavelength and the third wavelength.

[0108] The temperature measurement diagram of the first temperature interval is shown in Figure 2 The horizontal axis represents absolute temperature (in K), 30℃~100℃ corresponds to an absolute temperature of 303K~373K, and the vertical axis represents relative radiation intensity (in W / m 2 ·sr·μm).

[0109] According to some embodiments, a relationship curve between radiation intensity and radiation wavelength is drawn by actual measurement in the first temperature range. A fifth temperature is determined in the first temperature range, and the wavelength is changed at the fifth temperature to obtain a first relationship curve between radiation intensity and radiation wavelength, and a wavelength corresponding to a point on the first relationship curve where the product of curvature and the rate of change of curvature is the smallest is determined as the first wavelength.

[0110] The temperature measurement diagram of the second temperature range is shown in Figure 3 The horizontal axis represents absolute temperature (in K), 100℃~800℃ corresponds to absolute temperature of 373K~1073K, and the vertical axis represents relative radiation intensity (in W / m 2 ·sr·μm).

[0111] According to some embodiments, a relationship curve between radiation intensity and radiation wavelength is drawn by actual measurement in the second temperature range. A sixth temperature is determined in the second temperature range, and the wavelength is changed at the sixth temperature to obtain a second relationship curve between radiation intensity and radiation wavelength, and a wavelength corresponding to a point on the second relationship curve where the product of curvature and the rate of change of curvature is the smallest is determined as the second wavelength.

[0112] The temperature measurement diagram of the third temperature range is shown in Figure 4 The horizontal axis represents absolute temperature (in K), 800℃~3000℃ corresponds to absolute temperature of 1073K~3273K, and the vertical axis represents relative radiation intensity (in W / m 2 ·sr·μm).

[0113] According to some embodiments, a relationship curve between radiation intensity and radiation wavelength is drawn by actual measurement in the third temperature interval. A seventh temperature is determined in the third temperature interval, and the wavelength is changed at the seventh temperature to obtain a third relationship curve between radiation intensity and radiation wavelength, and a wavelength corresponding to a point on the third relationship curve where the product of curvature and the rate of change of curvature is the smallest is determined as the third wavelength.

[0114] See also Figure 5 , a graph of absolute temperature and relative radiation intensity in the entire temperature range. The radiation characteristics of the corresponding three temperature ranges are given by integrating the first temperature range (30℃~100℃), the second temperature range (100℃~800℃) and the third temperature range (800℃~2500℃ and above), as well as the first emissivity coefficient γ1δ1, the second emissivity coefficient γ2δ2 and the third emissivity coefficient γ3δ3.

[0115] The radiation intensity in the three temperature ranges is smooth, without pauses, inflection points and breakpoints. The temperature measurement method of the present invention can perform continuous temperature measurement at low temperature, medium temperature and high temperature by setting different emissivity coefficients and selecting appropriate emissivity coefficients for different temperature ranges.

[0116] High-precision measurement is achieved in a wide temperature range, with a measurement accuracy of 1‰. The change in radiation intensity is 1 order of magnitude in the low temperature section, 3 orders of magnitude in the medium temperature section, and 2 orders of magnitude in the high temperature section. The radiation intensity change in the entire measurement section is 6 orders of magnitude, which can meet the requirements of high-precision automatic temperature control.

[0117] The solved formula can effectively utilize the infrared radiation characteristics to accurately measure the state of various materials at different temperatures, thereby achieving more accurate temperature measurement. Table 1 shows the actual measurement results of the thermometer according to the technical solution of the present invention.

[0118] Table 1

[0119] Standard temperature point / ℃ Measured output value / ℃ Intrinsic error Expanded uncertainty U / C (k=2) 1400 1399.9 -0.1 2.8 1450 1451.6 1.6 3.0 1500 1502.2 2.2 3.2

[0120] It can be seen from this table that the measured output value is very close to the temperature value of the standard temperature point, the expanded uncertainty is between 2.8 and 3.2, and the reliability of the measurement result is high. The technical solution of the present invention has very good measurement accuracy, which is very important for industrial applications that require precise temperature control.

[0121] Figure 6 A schematic diagram of a three-band infrared temperature measurement system according to an example embodiment is shown.

[0122] According to an exemplary embodiment, a three-band infrared temperature measurement system includes a sensor assembly 101, a computing unit 103, and a storage unit 105. The sensor assembly 101 is used to measure radiation intensity, the computing unit 103 is used to receive radiation intensity data from the sensor assembly 101, and the storage unit 105 is connected to the computing unit 103 for communication, and the storage unit 105 is used to store the radiation intensity of the sensor assembly 101 and the temperature calculation result of the computing unit 103.

[0123] The sensor assembly 101 is composed of a photoelectric converter and an analog-to-digital converter. The photoelectric converter is used to monitor the temperature distribution of the furnace. The radiation intensity is directly received by the photoelectric converter and converted into an electrical signal. The analog-to-digital converter processes and converts the electrical signal of the photoelectric converter, and the analog-to-digital converter converts the analog signal generated by the photoelectric converter into a form that is easier to process.

[0124] According to an exemplary embodiment, the calculation unit calculates the three-band temperature by a temperature measurement calculation formula:

[0125]

[0126] In the formula, φ(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ and δ are the emissivity coefficients, and the unit of γ is watt cm 2 , the unit of δ is cm·K.

[0127] The coefficients γ and δ are determined according to the temperature measurement range.

[0128] Different emissivity coefficients are set according to different temperature intervals, the temperature intervals may include a first temperature interval, a second temperature interval and a third temperature interval, and the emissivity coefficients may include a first emissivity coefficient, a second emissivity coefficient and a third emissivity coefficient. The first emissivity coefficient, the second emissivity coefficient and the third emissivity coefficient correspond to the first temperature interval, the second temperature interval and the third temperature interval respectively.

[0129] The first emissivity coefficient is calculated by using the first radiation intensity and the second radiation intensity. The first emissivity coefficient is applied to a first temperature range. The relationship between the radiation intensity and the temperature in the first temperature range can be determined by solving the first emissivity coefficient.

[0130] The second emissivity coefficient is calculated by using the second radiation intensity and the third radiation intensity. The second emissivity coefficient is applied to a second temperature range. The relationship between the radiation intensity and the temperature in the second temperature range can be determined by solving the second emissivity coefficient.

[0131] The third emissivity coefficient is calculated by the third radiation intensity and the fourth radiation intensity, and the third emissivity coefficient is applied to a third temperature range. The relationship between the radiation intensity and the temperature in the third temperature range can be determined by solving the third emissivity coefficient.

[0132] The solved first emissivity coefficient γ1δ1, the second emissivity coefficient γ2δ2 and the third emissivity coefficient γ3δ3 are integrated to measure the temperature in the entire temperature range. The present invention can effectively use the infrared radiation characteristics to accurately measure the state of various materials at different temperatures through different emissivity coefficients in the formula, thereby achieving more accurate temperature measurement.

[0133] By adopting the system of the present invention, the detection distance can be changed from 0.5 meters to 25 meters, and the temperature of transparent and semi-transparent objects can be measured.

[0134] The three-band temperature system proposed in the present invention can be applied to the temperature monitoring method of semiconductor process or sintering process, wherein the three-band temperature measurement system can cover from low temperature to high temperature, realize temperature measurement in different temperature ranges in one device, and improve the temperature measurement accuracy.

[0135] Figure 7 A block diagram of a computing device is shown according to an exemplary embodiment.

[0136] like Figure 7 As shown, computing device 30 includes processor 12 and memory 14. Computing device 30 may also include bus 22, network interface 16, and I / O interface 18. Processor 12, memory 14, network interface 16, and I / O interface 18 may communicate with each other via bus 22.

[0137] The processor 12 may include one or more general-purpose CPUs (Central Processing Units, processors), microprocessors, or application-specific integrated circuits, etc., for executing relevant program instructions. According to some embodiments, the computing device 30 may also include a high-performance graphics card (GPU) 20 for accelerating the processor 12.

[0138] The memory 14 may include a machine system readable medium in the form of a volatile memory, such as a random access memory (RAM), a read-only memory (ROM) and / or a cache memory. The memory 14 is used to store one or more programs including instructions and data. The processor 12 can read the instructions stored in the memory 14 to execute the above-mentioned method according to the embodiment of the present invention.

[0139] The computing device 30 may also communicate with one or more networks via the network interface 16. The network interface 16 may be a wireless network interface.

[0140] The bus 22 may include an address bus, a data bus, a control bus, etc. The bus 22 provides a path for exchanging information between components.

[0141] It should be noted that, in the specific implementation process, the computing device 30 may also include other components necessary for normal operation. In addition, those skilled in the art may understand that the above device may only include components necessary for implementing the embodiments of this specification, and need not include all components shown in the figure.

[0142] The present invention also provides a computer-readable storage medium having a computer program stored thereon, which implements the steps of the above method when executed by a processor. The computer-readable storage medium may include, but is not limited to, any type of disk, including a floppy disk, an optical disk, a DVD, a CD-ROM, a microdrive, and a magneto-optical disk, a ROM, a RAM, an EPROM, an EEPROM, a DRAM, a VRAM, a flash memory device, a magnetic card or an optical card, a nanosystem (including a molecular memory IC), a network storage device, a cloud storage device, or any type of medium or device suitable for storing instructions and / or data.

[0143] An embodiment of the present invention also provides a computer program product, which includes a non-transitory computer-readable storage medium storing a computer program, and the computer program is operable to cause a computer to execute part or all of the steps of any method recorded in the above method embodiments.

[0144] Those skilled in the art can clearly understand that the technical solution of the present invention can be implemented with the help of software and / or hardware. "Unit" and "module" in this specification refer to software and / or hardware that can independently complete or cooperate with other components to complete specific functions, where the hardware can be, for example, a field programmable gate array, an integrated circuit, etc.

[0145] It should be noted that, for the above-mentioned method embodiments, for the sake of simplicity, they are all described as a series of action combinations, but those skilled in the art should know that the present invention is not limited by the described action sequence, because according to the present invention, certain steps can be performed in other sequences or simultaneously. Secondly, those skilled in the art should also know that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present invention.

[0146] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0147] In the several embodiments provided by the present invention, it should be understood that the disclosed devices can be implemented in other ways. For example, the device embodiments described above are only schematic, such as the division of units, which is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some service interfaces, and the indirect coupling or communication connection of devices or units can be electrical or other forms.

[0148] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0149] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0150] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable memory. Based on this understanding, the technical solution of the present invention is essentially or the part that contributes to the prior art or the whole or part of the technical solution can be embodied in the form of a software product, which is stored in a memory and includes several instructions for a computer device (which can be a personal computer, server or network device, etc.) to perform all or part of the steps of the methods of various embodiments of the present invention.

[0151] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0152] The exemplary embodiments of the present invention are specifically shown and described above. It should be understood that the present invention is not limited to the detailed structures, configurations or implementations described herein; on the contrary, the present invention is intended to cover various modifications and equivalent configurations included in the spirit and scope of the appended clauses.

Claims

1. A three-band infrared temperature measurement method, characterized in that: include: Determining a first set of parameter values ​​of a radiation formula for a first temperature interval at a first wavelength; Determining a second set of parameter values ​​of the radiation formula for a second temperature interval at a second wavelength; Determining a third set of parameter values ​​of the radiation formula for a third temperature interval at a third wavelength; The first group of parameter values, the second group of parameter values, and the third group of parameter values ​​are used for temperature measurement in the first temperature interval, the second temperature interval, and the third temperature interval, respectively.

2. The method according to claim 1, characterized in that The first temperature interval, the second temperature interval, and the third temperature interval adjacent to each other are determined by the first temperature, the second temperature, the third temperature, and the fourth temperature.

3. The method according to claim 1, characterized in that The radiation formula is: φ(λ,T)=γλ -5 ﹝exp(δ / λT)-1﹞ -1 Where φ(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ and δ are the emissivity coefficients as parameters, and the unit of γ is watt cm 2 , the unit of δ is cm·K.

4. The method according to claim 3, characterized in that The first set of parameter values, the second set of parameter values, and the third set of parameter values ​​are determined in the following manner: calculating the first set of parameter values ​​by a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature; calculating the second set of parameter values ​​by using the second radiation intensity and the third radiation intensity obtained at the third temperature; The third set of parameter values ​​is calculated using the third radiation intensity and a fourth radiation intensity obtained at the fourth temperature.

5. The method according to claim 1, characterized in that The first temperature range is 30°C to 100°C, the second temperature range is 100°C to 800°C, and the third temperature range is 800°C to 2500°C.

6. The method according to claim 1, characterized in that The first wavelength, the second wavelength and the third wavelength are the same.

7. The method according to claim 1, characterized in that The first wavelength, the second wavelength, and the third wavelength are different from each other.

8. The method according to claim 7, characterized in that The method also includes determining the first wavelength, the second wavelength, and the third wavelength by: determining a fifth temperature, a sixth temperature, and a seventh temperature within the first temperature interval, the second temperature interval, and the third temperature interval, respectively; Changing the wavelength at the fifth temperature, the sixth temperature and the seventh temperature respectively to obtain a first relationship curve, a second relationship curve and a third relationship curve between the radiation intensity and the radiation wavelength; The wavelengths corresponding to the points where the product of the curvature and the rate of change of the curvature is the smallest on the first relationship curve, the second relationship curve, and the third relationship curve are determined as the first wavelength, the second wavelength, and the third wavelength, respectively.

9. A temperature monitoring method for a semiconductor process or a sintering process, characterized in that: Comprising the method according to any one of claims 1-8.

10. A computing device, characterized in that: include: processor; as well as A memory storing a computer program, which, when executed by the processor, enables the processor to perform the method according to any one of claims 1 to 8.

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