AOI-based SMD thermistor temperature compensation method and system
Through AOI detection technology, a matching temperature compensation plan is developed to solve the problem of inaccurate temperature measurement caused by changes in the position of the thermistor patch in traditional technology, and more accurate TEC control and product performance improvement are achieved.
Patent Information
- Application Number
- CN202510085338.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-20
- Publication Date
- 2025-05-13
AI Technical Summary
In traditional semiconductor refrigerators, the change in the patch position of the thermistor leads to inaccurate temperature measurement results, which cannot be suitable for the temperature control of all semiconductor chips, affecting product performance and service life.
Through AOI detection technology, a matching temperature compensation plan is developed to make TEC control more accurate. Specific steps include obtaining the height range of the standard sample, testing and drawing a benchmark fit curve, shooting images of the product in the pilot stage, determining the relative position, drawing the target fit curve and establishing a mapping relationship to achieve temperature compensation.
Improves the accuracy of TEC control and ensures that the semiconductor chip is used at reasonable temperatures, thereby improving product performance and service life.
Smart Images

Figure CN119984568A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of AOI detection, and in particular relates to a temperature compensation method and system for a chip thermistor based on AOI. Background Art
[0002] AOI (Automated Optical Inspection) is an industrial inspection technology based on optical principles. It has been widely used in the manufacturing and packaging of semiconductor chips. Semiconductor products often require various patches. The higher the accuracy of the patch, the better the performance and consistency of the product. AOI equipment is usually used to measure the size of the patch.
[0003] It should be noted that in traditional devices with thermal electric coolers (TEC), high control requirements are imposed on the temperature of the semiconductor chip on the TEC. In order to accurately control the temperature of the semiconductor chip and prevent the semiconductor chip from overheating, which would affect the performance and service life of the semiconductor chip, a thermistor is usually mounted on the same substrate as the semiconductor chip to measure the temperature using the property that the resistance of the thermistor material changes with temperature. Since the temperature of the semiconductor chip itself is not actually measured, the measurement result is temperature compensated and the TEC is adjusted based on the temperature compensation result.
[0004] Due to the influence of patch accuracy, the patch of the thermistor is not always in the same position. When the relative position of the thermistor and the semiconductor chip changes, the temperature measured by the thermistor will also change. If a unified temperature compensation is used, it will inevitably not be suitable for the temperature control of all semiconductor chips, which will eventually cause the semiconductor chip to be used at an unreasonable temperature, affecting the product performance. Summary of the invention
[0005] Based on this, an embodiment of the present invention provides a temperature compensation method and system for a chip thermistor based on AOI, which aims to obtain the relative position change between the thermistor and the semiconductor chip in the chip product through AOI detection, formulate matching temperature compensation, and make TEC control more accurate, thereby improving product performance.
[0006] A first aspect of an embodiment of the present invention provides a temperature compensation method for a patch thermistor based on AOI, which is applied to a scene having a semiconductor refrigerator, a ceramic substrate fixed on the semiconductor refrigerator, and a chip array and a thermistor fixed on the ceramic substrate, wherein a marking point is provided on the ceramic substrate for alignment when the thermistor is patched, and the method comprises:
[0007] Obtain the height range of each layer of the standard sample that the AOI device needs to photograph, wherein the standard sample refers to a sample prepared under the theoretical design size of a semiconductor refrigerator, a ceramic substrate, a chip array, and a thermistor, and the standard sample includes at least the first layer where the semiconductor refrigerator is located, the second layer where the ceramic substrate is located, the third layer where the thermistor is located, and the fourth layer where the chip array is located;
[0008] The standard samples are tested at each preset first ambient temperature, wherein a first chip array temperature measured by a thermistor is obtained according to a preset control temperature of the semiconductor refrigerator, and when the chip array temperature is controlled to reach a target temperature, a second chip array temperature measured by the thermistor is obtained;
[0009] At each preset first ambient temperature, drawing a reference fitting curve according to the first chip array temperature and the second chip array temperature;
[0010] Control the AOI equipment to take pictures of the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, lock the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determine the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator;
[0011] Burning the reference fitting curve into each device produced in the pilot stage, and testing each device produced in the pilot stage at each preset second ambient temperature, and drawing a target fitting curve based on the reference fitting curve, wherein each preset second ambient temperature is a part of each preset first ambient temperature;
[0012] Determining a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve;
[0013] The relative positions of the ceramic substrate, chip array and thermistor of the device in batch production and the semiconductor refrigerator are obtained, and the corresponding target fitting curve is determined according to the mapping relationship to compensate for the temperature.
[0014] Preferably, the step of controlling the AOI device to photograph the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, locking the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determining the relative positions of the ceramic substrate, chip array and thermistor to the semiconductor refrigerator respectively includes:
[0015] According to the height range of each layer of the standard sample, the AOI device is controlled to scan and photograph the fourth layer, the third layer, the second layer and the first layer in sequence to determine a first target image with clear contours of each layer;
[0016] The first target images with clear contours of each layer are fused to obtain a second target image;
[0017] Taking the semiconductor refrigerator in the second target image as a reference, the coordinate positions of the ceramic substrate, the chip array and the thermistor on the semiconductor refrigerator are determined.
[0018] Preferably, the step of controlling the AOI device to scan and photograph the fourth layer, the third layer, the second layer and the first layer in sequence according to the height range of each layer of the standard sample to determine the first target image with clear contours of each layer includes:
[0019] Obtain standard images with clear outlines of each layer of the standard sample respectively, circle the target areas representing the semiconductor refrigerator, the ceramic substrate, the chip array and the thermistor in each standard image, and determine the area of each target area;
[0020] Control the AOI device to scan and photograph layer by layer from the fourth layer to the first layer. In the process of scanning and photographing each layer, first control the AOI device to move to the upper limit of the corresponding height range in the Z-axis direction, and then move from the upper limit of the corresponding height range to the lower limit of the corresponding height range according to a preset step;
[0021] Acquire an image of the AOI device during movement in the Z-axis direction, determine a first image containing contours, and acquire the area of each contour in the first image;
[0022] Determining whether the area of each contour in the first image matches the area of the corresponding target area;
[0023] If so, the corresponding first image is determined as the first target image.
[0024] Preferably, the step of acquiring an image of the AOI device during movement in the Z-axis direction, determining a first image containing contours, and acquiring the area of each contour in the first image comprises:
[0025] Acquire the image of the AOI device in the process of moving in the Z-axis direction, and convert the image of the AOI device in the process of moving in the Z-axis direction into a grayscale image;
[0026] Obtaining the pixel value of each pixel in the grayscale image, and calculating the pixel difference between adjacent pixels;
[0027] Determine whether the pixel difference is greater than a threshold;
[0028] If yes, determine the first image containing the contour, mark the adjacent pixels in the first image whose pixel difference is greater than the threshold, and calculate the area of the closed region enclosed by the adjacent pixels.
[0029] Preferably, the step of burning the reference fitting curve into each device produced in the pilot stage, and testing each device produced in the pilot stage at each preset second ambient temperature, and drawing a target fitting curve based on the reference fitting curve includes:
[0030] At each preset second ambient temperature, each device produced in the pilot stage is tested, wherein a third chip array temperature measured by a thermistor is obtained according to a preset control temperature of the semiconductor refrigerator, and when the chip array temperature is controlled to reach a target temperature, a fourth chip array temperature measured by the thermistor is obtained;
[0031] At each preset second ambient temperature, drawing a first fitting curve according to the third chip array temperature and the fourth chip array temperature;
[0032] The reference fitting curve and the first fitting curve are placed in the same coordinate system, a third ambient temperature other than each second ambient temperature is determined in each first ambient temperature, and a fitting curve segment at the third ambient temperature in the reference fitting curve is merged with the corresponding first fitting curve to obtain the target fitting curve.
[0033] Preferably, the step of determining a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve comprises:
[0034] The coordinate positions of the ceramic substrate, the chip array and the thermistor on the semiconductor refrigerator are classified, and a mapping relationship with the corresponding target fitting curve is established according to the category of the coordinate position.
[0035] A second aspect of an embodiment of the present invention provides an AOI-based chip thermistor temperature compensation system, which is used to implement the AOI-based chip thermistor temperature compensation method provided in the first aspect, and the system includes:
[0036] An acquisition module is used to acquire the height range of each layer of the standard sample that the AOI device needs to photograph, wherein the standard sample refers to a sample prepared under the theoretical design size of a semiconductor refrigerator, a ceramic substrate, a chip array, and a thermistor, and the standard sample includes at least the first layer where the semiconductor refrigerator is located, the second layer where the ceramic substrate is located, the third layer where the thermistor is located, and the fourth layer where the chip array is located;
[0037] A test module is used to test the standard sample at each preset first ambient temperature, wherein the first chip array temperature measured by the thermistor is obtained according to the preset control temperature of the semiconductor refrigerator, and when the chip array temperature reaches the target temperature, the second chip array temperature measured by the thermistor is obtained;
[0038] A first drawing module, used for drawing a reference fitting curve according to the first chip array temperature and the second chip array temperature at each preset first ambient temperature;
[0039] The control module is used to control the AOI equipment to take pictures of the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, lock the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determine the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator;
[0040] A second drawing module is used to burn the reference fitting curve into each device produced in the pilot stage, and test each device produced in the pilot stage at each preset second ambient temperature, and draw a target fitting curve based on the reference fitting curve, wherein each preset second ambient temperature is a part of each preset first ambient temperature;
[0041] A mapping relationship establishing module, used to determine a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve;
[0042] The target fitting curve determination module is used to obtain the relative positions of the ceramic substrate, chip array and thermistor of the device in batch production and the semiconductor refrigerator, and determine the corresponding target fitting curve according to the mapping relationship to compensate for the temperature.
[0043] A third aspect of an embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the AOI-based chip thermistor temperature compensation method provided in the first aspect.
[0044] A fourth aspect of an embodiment of the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the AOI-based chip thermistor temperature compensation method provided in the first aspect is implemented.
[0045] An AOI-based chip thermistor temperature compensation method and system are provided in an embodiment of the present invention. The method obtains the first chip array temperature in an undebugging state and the second chip array temperature in a debugging state under preset conditions, and draws a reference fitting curve according to the first chip array temperature and the second chip array temperature; controls the AOI equipment to photograph the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage to determine the relative position, and then uses the same method to test, and draws a target fitting curve based on the reference fitting curve; in actual use, after the relative position is obtained, a matching target fitting curve is obtained according to the mapping relationship, and burned into the device, so that TEC control is more accurate, thereby improving product performance. BRIEF DESCRIPTION OF THE DRAWINGS
[0046] Figure 1 A flow chart of an implementation method of a temperature compensation method of a chip thermistor based on AOI provided in the first embodiment of the present invention;
[0047] Figure 2 A structural block diagram of a chip thermistor temperature compensation system based on AOI provided in the second embodiment of the present invention;
[0048] Figure 3 This is a structural block diagram of an electronic device provided in Embodiment 3 of the present invention. DETAILED DESCRIPTION
[0049] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.
[0050] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.
[0051] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.
[0052] Embodiment 1
[0053] According to an embodiment of the present invention, a temperature compensation method for a chip thermistor based on AOI is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described may be executed in an order different from that shown here.
[0054] In the first embodiment, a temperature compensation method for a patch thermistor based on AOI is provided, which can be used in electronic devices, such as computers. It should be noted that the temperature compensation method for a patch thermistor based on AOI is applied to a scene with a semiconductor refrigerator, a ceramic substrate fixed on the semiconductor refrigerator, and a chip array and a thermistor fixed on the ceramic substrate. The ceramic substrate is provided with a marking point for alignment when the thermistor is patched. Please refer to Figure 1 , Figure 1 The flowchart of the implementation of a temperature compensation method for a chip thermistor based on AOI provided in the first embodiment of the present invention is shown, which specifically includes steps S01 to S07.
[0055] Step S01, obtaining the height range of each layer of the standard sample that the AOI device needs to photograph.
[0056] Among them, the standard sample refers to a sample prepared under the theoretical design size of a semiconductor refrigerator, a ceramic substrate, a chip array and a thermistor. The standard sample includes at least the first layer where the semiconductor refrigerator is located, the second layer where the ceramic substrate is located, the third layer where the thermistor is located and the fourth layer where the chip array is located.
[0057] Specifically, since the components inside the device are stacked structures, the AOI equipment can only shoot at one height and cannot take clear pictures of all the components. Therefore, it is necessary to obtain the height range of each layer of the standard sample and find the corresponding components at different height ranges. The height range of each layer of the standard sample has been determined during the device design. As for the preparation of the standard sample, each component can be adjusted to the standard position manually.
[0058] Step S02: testing the standard samples at the preset first ambient temperatures.
[0059] According to the preset control temperature of the semiconductor refrigerator, the first chip array temperature measured by the thermistor is obtained, and when the chip array temperature is controlled to reach the target temperature, the second chip array temperature measured by the thermistor is obtained.
[0060] The device is operated in a normal state, and the standard sample is tested at each preset first ambient temperature, wherein the standard sample can be placed in a temperature-controllable temperature cycle box for operation. For example, each preset first ambient temperature can be -10°C, -5°C, 0°C, 5°C, 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, 45°C, 50°C, etc., but not limited thereto. The preset control temperature of the semiconductor refrigerator is 52°C, that is, the purpose is to keep the semiconductor chip working at 52°C and output a stable wavelength. It is understandable that due to the influence of ambient temperature and patch process, the preset control temperature of the semiconductor refrigerator is not enough to make the semiconductor chip temperature the same as the preset control temperature of the semiconductor refrigerator. For this reason, temperature compensation is required.
[0061] It should be noted that the temperature on the chip array is measured by a thermocouple. Since the chip is a relatively fragile component, the chip cannot be damaged. The thermocouple can be attached to a substrate that is eutectic with the chip to measure the temperature of the chip. In addition, since there are more than one chips and they are distributed in an array, the temperature average of the chip array can be calculated, and the temperature average can be used to determine whether the temperature of the chip array is controlled to reach the target temperature.
[0062] Step S03 : drawing a reference fitting curve according to the first chip array temperature and the second chip array temperature at each preset first ambient temperature.
[0063] It can be understood that the reference fitting curve is used to compensate for the temperature so as to control the chip array temperature at the target temperature.
[0064] Step S04, controlling the AOI equipment to photograph the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, and locking the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determining the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator.
[0065] In this embodiment, according to the height range of each layer of the standard sample, the AOI device is controlled to scan and photograph the fourth layer, the third layer, the second layer and the first layer in sequence to determine the first target image with clear contours of each layer. Specifically, standard images with clear contours of each layer of the standard sample are obtained respectively, and the target areas representing the semiconductor refrigerator, the ceramic substrate, the chip array and thermistor in each standard image are circled, and the area of each target area, that is, the pixel area, is determined;
[0066] Control the AOI device to scan and photograph layer by layer from the fourth layer to the first layer. In the process of scanning and photographing each layer, first control the AOI device to move to the upper limit of the corresponding height range in the Z-axis direction, and then move from the upper limit of the corresponding height range to the lower limit of the corresponding height range according to a preset step;
[0067] Acquire an image of the AOI device in the process of moving in the Z-axis direction, determine a first image containing contours, and acquire the area of each contour in the first image. Specifically, acquire an image of the AOI device in the process of moving in the Z-axis direction, and convert the image of the AOI device in the process of moving in the Z-axis direction into a grayscale image to reduce recognition difficulty;
[0068] Get the pixel value of each pixel in the grayscale image and calculate the pixel difference between adjacent pixels;
[0069] Determine whether the pixel difference is greater than a threshold. It is understandable that there is often a large pixel difference between pixels at the boundary, so the boundary is marked in this way;
[0070] If yes, determine the first image containing the contour, mark the adjacent pixels in the first image whose pixel difference is greater than the threshold, and calculate the area of the closed region enclosed by the adjacent pixels;
[0071] Determining whether the area of each contour in the first image matches the area of the corresponding target area;
[0072] If yes, the corresponding first image is determined as the first target image, and at the same time, the AOI device is controlled to stop moving in the Z-axis direction;
[0073] The first target images with clear contours of each layer are fused to obtain the second target image. Specifically, since a coordinate system is established in advance for the image of the AOI device in the process of moving in the Z-axis direction, for example, the lower left corner of the image is used as the coordinate origin, when a clear first target image is obtained, the corresponding first target image is intercepted, and at the same time, the position of the first target image relative to the coordinate origin is recorded. By analogy, all the first target images are finally fused into one image according to the position relative to the coordinate origin;
[0074] Taking the semiconductor refrigerator in the second target image as a reference, determine the coordinate positions of the ceramic substrate, chip array and thermistor on the semiconductor refrigerator, wherein the coordinate positions between the semiconductor refrigerator, ceramic substrate, chip array and thermistor are determined by the designated lines on the semiconductor refrigerator, ceramic substrate, chip array and thermistor.
[0075] Step S05, burning the reference fitting curve into each device produced in the pilot stage, and testing each device produced in the pilot stage at each preset second ambient temperature, and drawing a target fitting curve based on the reference fitting curve, wherein each preset second ambient temperature is a part of each preset first ambient temperature.
[0076] It should be noted that the preset second ambient temperatures are part of the preset first ambient temperatures. Exemplarily, the preset second ambient temperatures may be -10°C, 0°C, 10°C, 20°C, 30°C, 40°C, 50°C, etc., but are not limited thereto. The purpose of step S05 is to reduce the number of tests while ensuring the accuracy of the target fitting curve. Specifically, at the preset second ambient temperatures, the devices produced in the pilot stage are tested, wherein the third chip array temperature measured by the thermistor is obtained according to the preset control temperature of the semiconductor refrigerator, and when the chip array temperature is controlled to reach the target temperature, the fourth chip array temperature measured by the thermistor is obtained;
[0077] At each preset second ambient temperature, drawing a first fitting curve according to the third chip array temperature and the fourth chip array temperature;
[0078] The reference fitting curve and the first fitting curve are placed in the same coordinate system, and the third ambient temperature other than the second ambient temperature in each first ambient temperature is determined. The fitting curve segment at the third ambient temperature in the reference fitting curve is merged with the corresponding first fitting curve to obtain a target fitting curve. Exemplarily, in the process of curve fusion, -5°C, 5°C, 15°C, 25°C, 35°C, 45°C and the like are merged. Specifically, the curves can be merged in an average manner or by multiplying the curves by a proportional coefficient.
[0079] Step S06: determining a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve.
[0080] It should be noted that if the position coordinates are simply used to establish a mapping relationship with the target fitting curve, the amount of data will be too large. For this reason, the coordinate positions of the ceramic substrate, chip array, and thermistor on the semiconductor refrigerator can be classified, and based on the category of the coordinate position, a mapping relationship with the corresponding target fitting curve can be established. That is, the coordinate position can be divided into regions, and a mapping relationship between the region and the corresponding target fitting curve can be established.
[0081] Step S07, obtaining the relative positions of the ceramic substrate, chip array and thermistor of the device in batch production and the semiconductor refrigerator, and determining the corresponding target fitting curve according to the mapping relationship to compensate for the temperature.
[0082] It can be understood that the AOI device and the burning system are electrically connected to the controller respectively, and the relative position information obtained by the AOI device is associated with the device number. In the device burning stage, the relative position information obtained by the AOI device is read by the controller, and the corresponding target fitting curve is called according to the mapping relationship, and the algorithm with the target fitting curve is burned into the device to complete temperature compensation.
[0083] In summary, the AOI-based chip thermistor temperature compensation method in the above-mentioned embodiment of the present invention obtains the first chip array temperature and the second chip array temperature under preset conditions, and draws a reference fitting curve; controls the AOI equipment to photograph the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage to determine the relative position, and then uses the same method to test, and draws the target fitting curve based on the reference fitting curve; in the actual application process, after the relative position is obtained, the matching target fitting curve is obtained according to the mapping relationship, and burned into the device, so that the TEC control is more accurate, thereby improving the product performance.
[0084] Embodiment 2
[0085] See also Figure 2 , Figure 2 This is a block diagram of a temperature compensation system for a chip thermistor based on AOI provided in the second embodiment of the present invention. The temperature compensation system 200 for a chip thermistor based on AOI is used to implement the above-mentioned embodiments and preferred implementations, and the descriptions that have been made will not be repeated. As used below, the term "module" can implement a combination of software and / or hardware for a predetermined function. Although the devices described in the following embodiments are preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceivable.
[0086] Specifically, the AOI-based chip thermistor temperature compensation system 200 includes: an acquisition module 21, a test module 22, a first drawing module 23, a control module 24, a second drawing module 25, a mapping relationship establishment module 26 and a target fitting curve determination module 27, wherein:
[0087] The acquisition module 21 is used to acquire the height range of each layer of the standard sample that the AOI device needs to shoot, wherein the standard sample refers to a sample prepared under the theoretical design size of a semiconductor refrigerator, a ceramic substrate, a chip array, and a thermistor, and the standard sample at least includes the first layer where the semiconductor refrigerator is located, the second layer where the ceramic substrate is located, the third layer where the thermistor is located, and the fourth layer where the chip array is located;
[0088] The test module 22 is used to test the standard sample at each preset first ambient temperature, wherein the first chip array temperature measured by the thermistor is obtained according to the preset control temperature of the semiconductor refrigerator, and when the chip array temperature reaches the target temperature, the second chip array temperature measured by the thermistor is obtained;
[0089] A first drawing module 23 is used to draw a reference fitting curve according to the first chip array temperature and the second chip array temperature at each preset first ambient temperature;
[0090] The control module 24 is used to control the AOI equipment to take pictures of the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, lock the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determine the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator;
[0091] The second drawing module 25 is used to burn the reference fitting curve into each device produced in the pilot stage, and test each device produced in the pilot stage at each preset second ambient temperature, and draw a target fitting curve based on the reference fitting curve, wherein each preset second ambient temperature is a part of each preset first ambient temperature;
[0092] A mapping relationship establishing module 26, configured to determine a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve;
[0093] The target fitting curve determination module 27 is used to obtain the relative positions of the ceramic substrate, chip array and thermistor of the device in batch production and the semiconductor refrigerator, and determine the corresponding target fitting curve according to the mapping relationship to compensate for the temperature.
[0094] Furthermore, in some optional embodiments of the present invention, the control module 24 includes:
[0095] A first control unit is used to control the AOI device to scan and photograph the fourth layer, the third layer, the second layer and the first layer in sequence according to the height range of each layer of the standard sample, so as to determine a first target image with clear contours of each layer;
[0096] A first fusion unit is used to fuse the first target images with clear contours in each layer to obtain a second target image;
[0097] The first determining unit is used to determine the coordinate positions of the ceramic substrate, the chip array and the thermistor on the semiconductor refrigerator based on the semiconductor refrigerator in the second target image.
[0098] Further, in some optional embodiments of the present invention, the first control unit includes:
[0099] The demarcation subunit is used to obtain standard images with clear outlines of each layer of the standard sample, demarcate the target areas representing the semiconductor refrigerator, the ceramic substrate, the chip array and the thermistor in each standard image, and determine the area of each target area;
[0100] The control subunit is used to control the AOI device to scan and shoot layer by layer from the fourth layer to the first layer. In the process of scanning and shooting each layer, the AOI device is first controlled to move to the upper limit of the corresponding height range in the Z-axis direction, and then moves from the upper limit of the corresponding height range to the lower limit of the corresponding height range according to a preset step;
[0101] The first determination subunit is used to obtain an image of the AOI device during the movement in the Z-axis direction, determine a first image containing contours, and obtain the area of each contour in the first image. Specifically, the image of the AOI device during the movement in the Z-axis direction is obtained, and the image of the AOI device during the movement in the Z-axis direction is converted into a grayscale image;
[0102] Obtaining the pixel value of each pixel in the grayscale image, and calculating the pixel difference between adjacent pixels;
[0103] Determine whether the pixel difference is greater than a threshold;
[0104] If yes, determine the first image containing the contour, mark the adjacent pixels in the first image whose pixel difference is greater than the threshold, and calculate the area of the closed region enclosed by the adjacent pixels;
[0105] A judging subunit, used to judge whether the area of each contour in the first image matches the area of the corresponding target area;
[0106] The second determining subunit is configured to determine the corresponding first image as the first target image if it is determined that the area of each contour in the first image matches the area of the corresponding target region.
[0107] Furthermore, in some optional embodiments of the present invention, the second drawing module 25 includes:
[0108] A test unit, used to test each device produced in the pilot stage at each preset second ambient temperature, wherein a third chip array temperature measured by a thermistor is obtained according to a preset control temperature of the semiconductor refrigerator, and when the chip array temperature is controlled to reach a target temperature, a fourth chip array temperature measured by the thermistor is obtained;
[0109] A drawing unit, used for drawing a first fitting curve according to the third chip array temperature and the fourth chip array temperature at each preset second ambient temperature;
[0110] The second fusion unit is used to place the reference fitting curve and the first fitting curve in the same coordinate system, determine the third ambient temperature in each first ambient temperature except the second ambient temperature, and fuse the fitting curve segment at the third ambient temperature in the reference fitting curve with the corresponding first fitting curve to obtain the target fitting curve.
[0111] Further, in some optional embodiments of the present invention, the mapping relationship establishing module 26 includes:
[0112] The classification unit is used to classify the coordinate positions of the ceramic substrate, the chip array and thermistor on the semiconductor refrigerator, and establish a mapping relationship with the corresponding target fitting curve according to the category of the coordinate position.
[0113] Embodiment 3
[0114] Another aspect of the present invention provides an electronic device, see Figure 3 , shown is an electronic device in Embodiment 3 of the present invention, including a memory 20, a processor 10, and a computer program 30 stored in the memory and executable on the processor. When the processor 10 executes the computer program 30, the temperature compensation method of the chip thermistor based on AOI as described above is implemented.
[0115] In some embodiments, the processor 10 may be a central processing unit (CPU), a controller, a microcontroller, a microprocessor or other data processing chip, used to run program codes or process data stored in the memory 20, such as executing access restriction programs.
[0116] Among them, the memory 20 includes at least one type of readable storage medium, and the readable storage medium includes flash memory, hard disk, multimedia card, card-type memory (for example, SD or DX memory, etc.), magnetic memory, disk, optical disk, etc. The memory 20 may be an internal storage unit of an electronic device in some embodiments, such as a hard disk of the electronic device. The memory 20 may also be an external storage device of an electronic device in other embodiments, such as a plug-in hard disk equipped on the electronic device, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (FlashCard), etc. Further, the memory 20 may also include both an internal storage unit and an external storage device of the electronic device. The memory 20 may be used not only to store application software and various types of data of the electronic device, but also to temporarily store data that has been output or is to be output.
[0117] It should be pointed out that Figure 3 The structure shown does not constitute a limitation on the electronic device. In other embodiments, the electronic device may include fewer or more components than those shown in the figure, or combine certain components, or arrange the components differently.
[0118] The embodiment of the present invention further provides a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the temperature compensation method of the chip thermistor based on AOI as described above is implemented.
[0119] Those skilled in the art will appreciate that the logic and / or steps represented in the flowchart or otherwise described herein, for example, may be considered as an ordered list of executable instructions for implementing logical functions, and may be embodied in any computer-readable medium for use by an instruction execution system, device or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or apparatus and execute instructions), or in conjunction with such instruction execution systems, devices or apparatuses. For purposes of this specification, a "computer-readable medium" may be any device that can contain, store, communicate, propagate or transmit a program for use by an instruction execution system, device or apparatus, or in conjunction with such instruction execution systems, devices or apparatuses.
[0120] More specific examples of computer-readable media (a non-exhaustive list) include the following: an electrical connection with one or more wires (electronic device), a portable computer disk case (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable medium may even be a paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, deciphering or, if necessary, processing in another suitable manner, and then stored in a computer memory.
[0121] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, a plurality of steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or a combination thereof: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.
[0122] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0123] The above embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present invention. It should be pointed out that, for a person of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the attached claims.
Claims
1. A temperature compensation method for a chip thermistor based on AOI, characterized in that: Applicable to a scenario of a device having a semiconductor refrigerator, a ceramic substrate fixed on the semiconductor refrigerator, a chip array and a thermistor fixed on the ceramic substrate, wherein a marking point is provided on the ceramic substrate for alignment when the thermistor is mounted, the method comprises: Obtain the height range of each layer of the standard sample that the AOI device needs to photograph, wherein the standard sample refers to a sample prepared under the theoretical design size of a semiconductor refrigerator, a ceramic substrate, a chip array, and a thermistor, and the standard sample includes at least the first layer where the semiconductor refrigerator is located, the second layer where the ceramic substrate is located, the third layer where the thermistor is located, and the fourth layer where the chip array is located; The standard samples are tested at each preset first ambient temperature, wherein a first chip array temperature measured by a thermistor is obtained according to a preset control temperature of the semiconductor refrigerator, and when the chip array temperature is controlled to reach a target temperature, a second chip array temperature measured by the thermistor is obtained; At each preset first ambient temperature, drawing a reference fitting curve according to the first chip array temperature and the second chip array temperature; Control the AOI equipment to take pictures of the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, lock the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determine the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator; Burning the reference fitting curve into each device produced in the pilot stage, and testing each device produced in the pilot stage at each preset second ambient temperature, and drawing a target fitting curve based on the reference fitting curve, wherein each preset second ambient temperature is a part of each preset first ambient temperature; Determining a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve; The relative positions of the ceramic substrate, chip array and thermistor of the device in batch production and the semiconductor refrigerator are obtained, and the corresponding target fitting curve is determined according to the mapping relationship to compensate for the temperature.
2. The AOI-based chip thermistor temperature compensation method according to claim 1, characterized in that: The steps of controlling the AOI equipment to photograph the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, locking the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determining the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator include: According to the height range of each layer of the standard sample, the AOI device is controlled to scan and photograph the fourth layer, the third layer, the second layer and the first layer in sequence to determine a first target image with clear contours of each layer; The first target images with clear contours of each layer are fused to obtain a second target image; Taking the semiconductor refrigerator in the second target image as a reference, the coordinate positions of the ceramic substrate, the chip array and the thermistor on the semiconductor refrigerator are determined.
3. The AOI-based chip thermistor temperature compensation method according to claim 2, characterized in that: The step of controlling the AOI device to scan and photograph the fourth layer, the third layer, the second layer and the first layer in sequence according to the height range of each layer of the standard sample to determine a first target image with clear contours of each layer comprises: Obtain standard images with clear outlines of each layer of the standard sample respectively, circle the target areas representing the semiconductor refrigerator, the ceramic substrate, the chip array and the thermistor in each standard image, and determine the area of each target area; Control the AOI device to scan and photograph layer by layer from the fourth layer to the first layer. In the process of scanning and photographing each layer, first control the AOI device to move to the upper limit of the corresponding height range in the Z-axis direction, and then move from the upper limit of the corresponding height range to the lower limit of the corresponding height range according to a preset step; Acquire an image of the AOI device during movement in the Z-axis direction, determine a first image containing contours, and acquire the area of each contour in the first image; Determining whether the area of each contour in the first image matches the area of the corresponding target area; If so, the corresponding first image is determined as the first target image.
4. The AOI-based chip thermistor temperature compensation method according to claim 3, characterized in that: The steps of acquiring an image of the AOI device during movement in the Z-axis direction, determining a first image containing contours, and acquiring the area of each contour in the first image include: Acquire the image of the AOI device in the process of moving in the Z-axis direction, and convert the image of the AOI device in the process of moving in the Z-axis direction into a grayscale image; Obtaining the pixel value of each pixel in the grayscale image, and calculating the pixel difference between adjacent pixels; Determine whether the pixel difference is greater than a threshold; If yes, determine the first image containing the contour, mark the adjacent pixels in the first image whose pixel difference is greater than the threshold, and calculate the area of the closed region enclosed by the adjacent pixels.
5. The AOI-based chip thermistor temperature compensation method according to claim 4, characterized in that: The step of burning the reference fitting curve into each device produced in the pilot stage, and testing each device produced in the pilot stage at each preset second ambient temperature, and drawing a target fitting curve based on the reference fitting curve includes: At each preset second ambient temperature, each device produced in the pilot stage is tested, wherein a third chip array temperature measured by a thermistor is obtained according to a preset control temperature of the semiconductor refrigerator, and when the chip array temperature is controlled to reach a target temperature, a fourth chip array temperature measured by the thermistor is obtained; At each preset second ambient temperature, drawing a first fitting curve according to the third chip array temperature and the fourth chip array temperature; The reference fitting curve and the first fitting curve are placed in the same coordinate system, a third ambient temperature other than each second ambient temperature is determined in each first ambient temperature, and a fitting curve segment at the third ambient temperature in the reference fitting curve is merged with the corresponding first fitting curve to obtain the target fitting curve.
6. The AOI-based chip thermistor temperature compensation method according to claim 5, characterized in that: The step of determining a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve comprises: The coordinate positions of the ceramic substrate, the chip array and the thermistor on the semiconductor refrigerator are classified, and a mapping relationship with the corresponding target fitting curve is established according to the category of the coordinate position.
7. A chip thermistor temperature compensation system based on AOI, characterized in that: For implementing the AOI-based chip thermistor temperature compensation method according to any one of claims 1 to 6, the system comprises: An acquisition module is used to acquire the height range of each layer of the standard sample that the AOI device needs to photograph, wherein the standard sample refers to a sample prepared under the theoretical design size of a semiconductor refrigerator, a ceramic substrate, a chip array, and a thermistor, and the standard sample includes at least the first layer where the semiconductor refrigerator is located, the second layer where the ceramic substrate is located, the third layer where the thermistor is located, and the fourth layer where the chip array is located; A test module is used to test the standard sample at each preset first ambient temperature, wherein the first chip array temperature measured by the thermistor is obtained according to the preset control temperature of the semiconductor refrigerator, and when the chip array temperature reaches the target temperature, the second chip array temperature measured by the thermistor is obtained; A first drawing module, used for drawing a reference fitting curve according to the first chip array temperature and the second chip array temperature at each preset first ambient temperature; The control module is used to control the AOI equipment to take pictures of the semiconductor refrigerator, ceramic substrate, chip array and thermistor of each device produced in the pilot stage, lock the images of each layer of the semiconductor refrigerator, ceramic substrate, chip array and thermistor according to the image processing technology and the height range of each layer of the standard sample, and determine the relative positions of the ceramic substrate, chip array and thermistor with the semiconductor refrigerator; A second drawing module is used to burn the reference fitting curve into each device produced in the pilot stage, and test each device produced in the pilot stage at each preset second ambient temperature, and draw a target fitting curve based on the reference fitting curve, wherein each preset second ambient temperature is a part of each preset first ambient temperature; A mapping relationship establishing module, used to determine a mapping relationship between the relative position and the target fitting curve according to the relative position and the target fitting curve; The target fitting curve determination module is used to obtain the relative positions of the ceramic substrate, chip array and thermistor of the device in batch production and the semiconductor refrigerator, and determine the corresponding target fitting curve according to the mapping relationship to compensate for the temperature.
8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the AOI-based chip thermistor temperature compensation method as described in any one of claims 1 to 6 is implemented.
9. An electronic device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the temperature compensation method for the chip thermistor based on AOI as claimed in any one of claims 1 to 6 is implemented.