Photomask repair method and photomask

Abstract

The application discloses a photomask repairing method and a photomask, and belongs to the technical field of semiconductors. The method comprises the following steps: determining a to-be-repaired area on the surface of a photomask away from a protective film; the to-be-repaired area corresponds to a defect area of a light-shielding layer inside the photomask; depositing a light-shielding film on the to-be-repaired area to shield light penetrating through a transparent substrate after the light is emitted from the defect area of the light-shielding layer to the surface of the protective film, and obtaining a repaired photomask. According to the application, a layer of light-shielding film is directly deposited on the back of the photomask to shield the light penetrating through the transparent substrate after the light is emitted from the defect area. When a large black area hole defect occurs in the photomask after the protective film is attached, the photomask can be repaired without removing the protective film. The process step can be applied to specific defects on photomasks of different layers, different processes and different patterns, thereby optimizing the photomask repairing process flow, greatly reducing the rework process step, saving the delivery time and saving the consumption of the protective film.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a photomask repair method and a photomask. Background Technology

[0002] For chromium-layer photomasks with void-type defects, repair is typically achieved by depositing a vapor deposition gas in conjunction with a laser, using focused ions or focused electrons, to deposit the defect onto the photomask. This method is commonly used for void defects in photomasks without a protective film. However, for photomasks with a protective film, void-type defects cannot be directly repaired because the vapor deposition gas cannot penetrate the protective film and deposits on the photomask pattern surface. Currently, there is no mature, non-removable repair technology to support this type of defect in the photomask fabrication process. Typically, the protective film needs to be removed, cleaned, and the adhesive removed before repair, and then a new protective film needs to be applied. This repair method involves multiple process steps, resulting in long processing times. The more process steps involved, the higher the risk of scrap and delayed delivery, and at least one protective film is required. Furthermore, the price of protective films increases with the advancement of manufacturing processes. Therefore, how to reduce the processing time and protective film consumption associated with void-type defect repair is a technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0003] The purpose of this application is to provide a photomask repair method and a photomask, thereby reducing the multi-process time caused by repairing hole-type defects and reducing the consumption of protective film.

[0004] To achieve the above objectives, this application provides a photomask repair method, comprising:

[0005] Identify the area to be repaired on the surface of the photomask that is away from the protective film; the area to be repaired corresponds to the defect area in the light-shielding layer inside the photomask;

[0006] A light-shielding film is deposited in the area to be repaired to block light that penetrates the transparent substrate after entering the defect area of ​​the light-shielding layer from the surface of the protective film, thus obtaining the repaired light mask.

[0007] Optionally, a light-shielding film is deposited in the area to be repaired, including:

[0008] A light-shielding film is deposited on the area to be repaired using a laser beam in conjunction with a reactive gas.

[0009] Accordingly, before determining the repair area on the surface of the photomask away from the protective film, the process further includes:

[0010] The photomask is transmitted to the cavity of the laser repair equipment with the surface facing away from the protective film facing upwards.

[0011] Optionally, determining the repair area on the surface of the photomask facing away from the protective film includes:

[0012] Coarsely locate the area to be repaired on the surface of the photomask that is away from the protective film;

[0013] The area to be repaired is precisely located, and its coordinates are determined.

[0014] By operating the stage of the laser repair equipment, the lens position is moved from the coarse positioning position to the coordinates of the area to be repaired.

[0015] Optionally, the area to be repaired is precisely located, and the coordinates of the area to be repaired are determined, including:

[0016] The front coordinates of the defective area are obtained using a defect inspection device; the front coordinates are the coordinates of the defective area on the surface of the protective film.

[0017] The front coordinates are converted to obtain the back coordinates of the defect area; the back coordinates are the coordinates of the defect area on the surface of the photomask opposite to the protective film.

[0018] The coordinates of the area to be repaired are determined based on the back coordinates.

[0019] Optionally, after depositing a light-shielding film on the area to be repaired, the method further includes:

[0020] The repaired photomask is confirmed to be within the product specifications by spatial simulation imaging. When the repaired photomask is not detected to be within the product specifications, the step of depositing a light-shielding film in the area to be repaired is repeated until the step of confirming whether the repaired photomask is within the product specifications by spatial simulation imaging is performed, until the repaired photomask is detected to be within the product specifications.

[0021] Optionally, the reactant gas is hexacarbonylchromium gas.

[0022] Optionally, the number of pulses of the laser beam is 1 to 2, including the values ​​at both ends; the pulse overlap coefficient of the laser beam is 0.5 to 1, including the values ​​at both ends; the laser energy of the laser beam is 20% to 100%, including the values ​​at both ends; the attenuation factor of the laser beam is 10 to 60, including the values ​​at both ends; and the deposition laser energy of the laser beam is 1% to 100%, including the values ​​at both ends.

[0023] Optionally, the deposition time is 1 ms to 500 ms, including both ends; the deposition step is 0.01 μm. 2 / s~1μm 2 / s, including the values ​​at both ends.

[0024] Optionally, the flow rate of the reaction gas is 100 ml / min to 20000 ml / min, including both ends of the value.

[0025] To achieve the above objectives, this application also provides a photomask, comprising: a transparent substrate, a light-shielding layer, a protective film metal frame, and a protective film; the light-shielding layer and the protective film metal frame are disposed on the surface of the transparent substrate; the protective film metal frame surrounds the light-shielding layer; the protective film is disposed on the surface of the protective film metal frame facing away from the transparent substrate to cover the light-shielding layer; the surface of the transparent substrate facing away from the protective film is provided with a light-shielding film prepared by the photomask repair method described above.

[0026] This application provides a photomask repair method, comprising: determining a repairable area on the surface of the photomask away from the protective film; the repairable area corresponding to a defective area in the light-shielding layer inside the photomask; depositing a light-shielding film on the repairable area to block light that penetrates the transparent substrate after entering the defective area of ​​the light-shielding layer from the surface of the protective film, thereby obtaining the repaired photomask.

[0027] Obviously, this application achieves repair without removing the protective film when large black areas or holes appear in the photomask after film deposition, by directly depositing a light-shielding film on the back side of the photomask to block light from penetrating the defect area of ​​the light-shielding layer from the surface of the protective film and then passing through the transparent substrate. This process is applicable to specific defects on photomasks of different layers, different processes, and different patterns, optimizing the photomask repair process flow, significantly reducing rework steps, saving shipping time, and saving protective film consumption. This application also provides a photomask with a light-shielding film deposited on its back side, capable of blocking light from penetrating the transparent substrate 1 from the defect area of ​​the light-shielding layer from the surface of the protective film. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0029] Figure 1 This is a comprehensive view of the defects in the photomask.

[0030] Figure 2 This is a magnified view of the defective area;

[0031] Figure 3 This is a schematic diagram of the photomask structure after the film is applied.

[0032] Figure 4 A schematic diagram of a structure where holes grow on a photomask after the film is applied;

[0033] Figure 5 A flowchart of the old process for repairing holes in photomasks after film application;

[0034] Figure 6 A flowchart of a photomask repair method provided in this application embodiment;

[0035] Figure 7 A flowchart illustrating another photomask repair method provided in this application embodiment;

[0036] Figure 8 This is a schematic diagram of the structure of a photomask provided in an embodiment of this application;

[0037] Figure 9 A schematic flowchart illustrating a photomask repair method provided in an embodiment of this application;

[0038] Figure 10 A schematic diagram of backside repair provided for an embodiment of this application;

[0039] Figure 11 This application provides spatial simulation imaging results for hole-type defect repair in its embodiments.

[0040] The annotations in the attached figures are explained as follows:

[0041] 1-Transparent substrate / quartz substrate; 2-Light-shielding layer; 2.1-Patterned chromium layer; 2.2-Patterned chromium oxide layer; 3-Protective film metal frame; 4-Protective film; 5-Defect area; 6-Light-shielding film; 7-Laser beam; 8-Reactive gas / chromium hexacarbonyl gas. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] Please refer to Figure 1 , Figure 1 This is a complete view of the defect inspection of the photomask. Figure 1 The middle arrow indicates the location of the hole defect detected by the defect inspection equipment on the photomask after film application. A defect can be seen at this location within the light-shielding layer area of ​​the photomask. The magnified defect area is shown below. Figure 2 As shown. From Figure 2 An abnormal white spot can be observed on the light-shielding layer, indicating a hole defect at that location. Examining the transmitted light can determine if the defect has excessively high transmittance. If the transmittance is too high, it may cause recurring defects on the silicon wafer, thus requiring deposition repair at the defect location.

[0044] Normal photomasks, such as Figure 3 As shown, the photomask includes a quartz substrate 1, a patterned chromium layer 2.1 and a protective metal frame 3 disposed on the quartz substrate 1, a patterned chromium oxide layer 2.2 disposed on the patterned chromium layer 2.1, and a protective film 4 disposed on the protective metal frame 3. However, during the photomask fabrication process, defects such as… Figure 4 The defect region shown is 5. To avoid affecting the subsequent use of the photomask, a deposition repair process is needed to repair this defect. Commonly used repair processes include... Figure 5 As shown, the process requires first removing the protective film 4 for adhesive removal and cleaning; then defect inspection and repair; and finally, reapplying the protective film 4 after repair. This repair method involves multiple process steps, resulting in a long processing time. The more process steps involved, the higher the risk of scrap and delayed shipment, and at least one photomask protective film 4 is required. Moreover, the price of the protective film 4 increases with the advancement of the manufacturing process. Therefore, this application provides a photomask repair method that directly deposits a light-shielding film 6 on the back side of the photomask to block light that enters from the surface of the protective film 4 and penetrates the defect area 5, thereby reducing the processing time caused by repairing hole-type defects and reducing the consumption of the protective film 4.

[0045] Please refer to Figure 6 , Figure 6 A flowchart of a photomask repair method provided in this application embodiment, the method may include:

[0046] S101: Determine the area to be repaired on the surface of the photomask away from the protective film 4; the area to be repaired corresponds to the defect area 5 of the light-shielding layer 2 inside the photomask.

[0047] This embodiment does not limit the specific method of determining the area to be repaired, as long as the location of the area to be repaired can be determined. For example, when the laser repair equipment is used to deposit the light-shielding film 6 in this embodiment, the method of determining the area to be repaired can be to perform coarse positioning of the area to be repaired on the surface of the photomask away from the protective film 4; to perform precise positioning of the area to be repaired and determine the coordinates of the area to be repaired; and to move the lens position from the coarse positioning position to the coordinates of the area to be repaired by operating the stage of the laser repair equipment.

[0048] This embodiment does not limit the specific method of precise positioning, as long as the coordinates of the area to be repaired can be determined. For example, the front coordinates of the defect area 5 can be obtained by using a defect inspection device; the front coordinates are the coordinates of the defect area 5 on the surface of the protective film 4; the front coordinates are converted to obtain the back coordinates of the defect area 5; the back coordinates are the coordinates of the defect area 5 on the surface of the photomask away from the protective film 4; the coordinates of the area to be repaired are determined based on the back coordinates.

[0049] S102: Deposit a light-shielding film 6 in the area to be repaired to block light that penetrates the transparent substrate 1 after entering the defect area 5 of the light-shielding layer 2 from the surface of the protective film 4, and obtain the repaired light mask.

[0050] This embodiment does not limit the specific area of ​​the light-shielding film 6. As long as the area of ​​the light-shielding film 6 is greater than the area of ​​the defect area 5, it can block the light that enters the defect area 5 of the light-shielding layer 2 from the surface of the protective film 4 and then penetrates the transparent substrate 1.

[0051] This embodiment does not limit the specific method of depositing the light-shielding film 6, as long as it ensures that the light-shielding film 6 can be formed in the area to be repaired. For example, the light-shielding film 6 can be deposited in the area to be repaired using a laser beam 7 in conjunction with a reactive gas 8. Correspondingly, before determining the area to be repaired where the photomask faces away from the protective film 4, the embodiment further includes: transferring the photomask with the surface facing away from the protective film 4 upwards into the cavity of the laser repair equipment. This embodiment does not limit the specific type of reactive gas 8, as long as it ensures that the film layer generated after the gas reaction can block light. For example, the reactive gas 8 can be hexacarbonyl chromium gas 8, or a tungsten-containing gas.

[0052] This embodiment does not limit the specific number of pulses of the laser beam 7. For example, the number of pulses of the laser beam 7 can be 1 to 20, including the values ​​at both ends.

[0053] This embodiment does not limit the specific pulse overlap coefficient of the laser beam 7. For example, the pulse overlap coefficient of the laser beam 7 can be 0.5 to 1, including the values ​​at both ends.

[0054] This embodiment does not limit the specific laser energy of the laser beam 7. For example, the laser energy of the laser beam 7 can be 20% to 100%, including the values ​​at both ends. This embodiment does not limit the specific attenuation factor of the laser beam 7. For example, the attenuation factor of the laser beam 7 can be 10 to 60, including the values ​​at both ends.

[0055] This embodiment does not limit the specific deposition laser energy of the laser beam 7. For example, the deposition laser energy of the laser beam 7 can be 1% to 100%, including the values ​​at both ends. This embodiment does not limit the specific deposition time. For example, the deposition time can be 1ms to 500ms, including the values ​​at both ends.

[0056] This embodiment does not limit the specific deposition steps; for example, the deposition step can be 0.01 μm. 2 / s~1μm 2 / s, including both ends. Deposition steps refer to the deposition area per second.

[0057] This embodiment does not limit the specific flow rate of the reactant gas 8. For example, the flow rate of the reactant gas 8 can be 100 ml / min to 20000 ml / min, including the values ​​at both ends.

[0058] It should be noted that changes to the above parameters will affect the adhesion viscosity of the deposit, the size of the deposit area, and the success of the deposition. Therefore, the appropriate parameters can be selected for deposition treatment based on the actual condition of the defect.

[0059] Furthermore, in order to improve the pass rate of the repaired photomask, this embodiment can also confirm whether the repaired photomask is within the product specifications by spatial simulation imaging after depositing the light-shielding film 6 in the area to be repaired; when the repaired photomask is detected to be outside the product specifications, the steps of depositing the light-shielding film 6 in the area to be repaired and confirming whether the repaired photomask is within the product specifications by spatial simulation imaging are repeated until the repaired photomask is detected to be within the product specifications.

[0060] This embodiment does not limit the specific type of photomask to be repaired, nor does it limit the specific type of defect. For example, this embodiment can be applied to repair the defects in Table 1.

[0061] Table 1. Types of defects applicable to this embodiment.

[0062]

[0063] Based on the above embodiments, this application directly deposits a light-shielding film 6 on the back side of the photomask to block light that penetrates the transparent substrate 1 after entering the defect area 5 of the light-shielding layer 2 from the surface of the protective film 4. This allows for repair of large black area holes in the photomask after film application without removing the protective film 4. This process is applicable to specific defects on photomasks with different layers, different processes, and different patterns, optimizing the photomask repair process flow, significantly reducing rework steps, saving shipping time, and saving on the consumption of the protective film 4.

[0064] Please refer to Figure 7 , Figure 7 A flowchart of another photomask repair method provided in this application embodiment, the method may include:

[0065] S201: The photomask with the surface facing away from the protective film 4 facing upwards is transmitted to the cavity of the laser repair equipment.

[0066] S202: Determine the area to be repaired on the surface of the photomask away from the protective film 4; the area to be repaired corresponds to the defect area 5 of the light-shielding layer 2 inside the photomask.

[0067] S203: A light-shielding film 6 is deposited on the area to be repaired using a laser beam 7 and a reactive gas 8 to block light that enters the defect area 5 of the light-shielding layer 2 from the surface of the protective film 4 and then penetrates the transparent substrate 1, thus obtaining a repaired light mask.

[0068] S204: Confirm whether the repaired photomask is within the product specifications through spatial simulation imaging; when the repaired photomask is detected to be outside the product specifications, repeatedly execute the step of depositing a light-shielding film 6 in the area to be repaired until the repaired photomask is confirmed to be within the product specifications through spatial simulation imaging, until the repaired photomask is detected to be within the product specifications.

[0069] Based on the above embodiments, this application uses a laser repair device to directly deposit a light-shielding film 6 on the back of the photomask to block light that penetrates the transparent substrate 1 after entering the defect area 5 of the light-shielding layer 2 from the surface of the protective film 4. This allows for repair without removing the protective film 4, optimizes the photomask repair process, significantly reduces rework steps, saves shipping time, and saves on the consumption of the protective film 4.

[0070] Please refer to Figure 8 , Figure 8 This is a schematic diagram of a photomask provided in an embodiment of this application. The photomask may include: a transparent substrate 1, a light-shielding layer 2, a protective film metal frame 3, and a protective film 4; the light-shielding layer 2 and the protective film metal frame 3 are disposed on the surface of the transparent substrate 1; the protective film metal frame 3 surrounds the light-shielding layer 2; the protective film 4 is disposed on the surface of the protective film metal frame 3 facing away from the transparent substrate 1 to cover the light-shielding layer 2; the surface of the transparent substrate 1 facing away from the protective film 4 is provided with a light-shielding film 6 prepared by the photomask repair method described above.

[0071] This embodiment does not limit the specific type of the light-shielding layer 2. For example, the light-shielding layer 2 can be a light-shielding layer containing a chromium layer or a light-shielding layer containing a molybdenum silicide layer. The structure of the light-shielding layer 2 containing a chromium layer may include a patterned chromium oxide layer 2.2 and a patterned chromium layer 2.1; the patterned chromium layer 2.1 is disposed on the surface of the transparent substrate 1; the patterned chromium oxide layer 2.2 is disposed on the surface of the patterned chromium layer 2.1 facing away from the transparent substrate 1. This embodiment does not limit the specific type of the transparent substrate 1; it can be any transparent substrate, such as a quartz layer substrate 1.

[0072] Based on the above embodiments, a light-shielding film 6 is deposited on the back side of the photomask of this application, which can block light that enters the defect area 5 of the light-shielding layer 2 from the surface of the protective film 4 and then penetrates the transparent substrate 1.

[0073] The photomask repair process described above is illustrated below with specific examples. Please refer to them. Figure 9 , Figure 9 This is a flowchart illustrating a photomask repair method provided in an embodiment of this application. This embodiment repairs a photomask... Figure 8 The chromium layer photomask shown has a defect in the patterned chromium layer 2.1. The repair process is as follows:

[0074] 1. Defects were found inside the protective film 4;

[0075] 2. Simulate defect imaging using a spatial simulation imaging system. If it is determined that defect area 5 is not within the product specifications, proceed with the subsequent repair process.

[0076] 3. Defect Repair:

[0077] (1) The quartz substrate 1 of the photomask is placed with the protective film 4 facing down, and then transferred to the cavity of the laser repair equipment.

[0078] (2) Using the lower right corner of the quartz substrate 1 as the origin of the coordinate system, the area to be repaired is roughly located.

[0079] (3) Using a defect inspection device, the coordinates (x, y) of the defect area 5 on the surface of the protective film 4 (with the lower left corner of the protective film 4 as the origin of the coordinate system) are obtained. Based on the relative position of the lower left corner origin of the protective film 4 and the lower right corner origin of the quartz substrate, as well as the width of the photomask, the coordinates are converted to obtain the coordinates (152400-x-9200, y+9200) of the defect area 5 on the surface of the quartz substrate 1 (with the lower right corner of the quartz substrate 1 as the origin of the coordinate system). These coordinates are the coordinates of the area to be repaired.

[0080] (4) By operating the stage of the laser repair equipment, the lens position is moved to the coordinates of the area to be repaired;

[0081] (5) Figure 10 As shown, a light-shielding film 6 is deposited on the area to be repaired using a laser beam 7 and hexacarbonyl chromium gas 8. The specific parameters for defect repair are shown in Table 2. The corresponding parameters are selected for deposition treatment according to the actual situation of the defect.

[0082]

[0083] 4. Confirm whether the repair effect is within the product specifications using a spatial simulation imaging system; if it is detected that it is not within the product specifications, return to step 3. Repeat steps 3 and 4 until it is detected that it is within the product specifications before shipping. The repeatability test results are shown in Table 3. The spatial simulation imaging results represent the contrast between the defective area and the same pattern without defects.

[0084] Number of repairs Space simulation imaging results (black area) 5 98％～102％

[0085] Compared with the traditional process, the repair process in this embodiment saves at least 6 process steps, greatly improves delivery efficiency, and can save the consumption of at least one protective film 4.

[0086] This document uses specific examples to illustrate the principles and implementation methods of this application. The various embodiments are progressive, with each embodiment focusing on its differences from others. Similar or identical parts between embodiments can be referred to interchangeably. The descriptions of the embodiments above are merely illustrative of the method and core ideas of this application. For those skilled in the art, various improvements and modifications can be made to this application without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this application.

[0087] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

Claims

1. A method for repairing photomasks, characterized in that, include: Identify the area to be repaired on the surface of the photomask that is away from the protective film; The area to be repaired corresponds to the defective area of ​​the light-shielding layer inside the photomask; A light-shielding film is deposited in the area to be repaired to block light that penetrates the transparent substrate after entering the defect area of ​​the light-shielding layer from the surface of the protective film, thus obtaining the repaired light mask.

2. The photomask repair method according to claim 1, characterized in that, Depositing a light-shielding film in the area to be repaired includes: A light-shielding film is deposited on the area to be repaired using a laser beam in conjunction with a reactive gas. Accordingly, before determining the repair area on the surface of the photomask away from the protective film, the process further includes: The photomask is transmitted to the cavity of the laser repair equipment with the surface facing away from the protective film facing upwards.

3. The photomask repair method according to claim 2, characterized in that, The process of determining the repair area on the surface of the photomask facing away from the protective film includes: Coarsely locate the area to be repaired on the surface of the photomask that is away from the protective film; The area to be repaired is precisely located, and its coordinates are determined. By operating the stage of the laser repair equipment, the lens position is moved from the coarse positioning position to the coordinates of the area to be repaired.

4. The photomask repair method according to claim 3, characterized in that, Accurately locate the area to be repaired and determine its coordinates, including: The front coordinates of the defective area are obtained using a defect inspection device; the front coordinates are the coordinates of the defective area on the surface of the protective film. The front coordinates are converted to obtain the back coordinates of the defect area; the back coordinates are the coordinates of the defect area on the surface of the photomask opposite to the protective film. The coordinates of the area to be repaired are determined based on the back coordinates.

5. The photomask repair method according to claim 1, characterized in that, After depositing a light-shielding film on the area to be repaired, the method further includes: The repaired photomask is confirmed to be within the product specifications by spatial simulation imaging. When the repaired photomask is not detected to be within the product specifications, the step of depositing a light-shielding film in the area to be repaired is repeated until the step of confirming whether the repaired photomask is within the product specifications by spatial simulation imaging is performed, until the repaired photomask is detected to be within the product specifications.

6. The photomask repair method according to claim 2, characterized in that, The reactant gas is hexacarbonylchromium gas.

7. The photomask repair method according to claim 2, characterized in that, The laser beam has 1 to 20 pulses, including the values ​​at both ends; the laser beam has a pulse overlap coefficient of 0.5 to 1, including the values ​​at both ends; the laser beam has a laser energy of 20% to 100%, including the values ​​at both ends; the laser beam has an attenuation factor of 10 to 60, including the values ​​at both ends; and the laser beam has a deposition laser energy of 1% to 100%, including the values ​​at both ends.

8. The photomask repair method according to claim 2, characterized in that, The deposition time ranges from 1 ms to 500 ms, including both ends. The deposition step was 0.01 μm. 2 / s~1μm 2 / s, including the values ​​at both ends.

9. The photomask repair method according to claim 2, characterized in that, The flow rate of the reactant gas is 100 ml / min to 20000 ml / min, including both ends.

10. A photomask, characterized in that, include: Transparent substrate, light-shielding layer, protective film, metal frame, and protective film; The light-shielding layer and the protective film metal frame are disposed on the surface of the transparent substrate; The protective film metal frame surrounds the light-shielding layer; The protective film is disposed on the surface of the protective film metal frame facing away from the transparent substrate to cover the light-shielding layer; the surface of the transparent substrate facing away from the protective film is provided with a light-shielding film prepared by the photomask repair method according to any one of claims 1 to 9.

Images