Method, Electronic Device, and Storage Medium for Ion Implantation Simulation

Abstract

Embodiments of the present disclosure relate to a method, an electronic device, and a storage medium for ion implantation simulation. The method includes: determining initial positions of respective ions in an exposed surface of a simulated semiconductor device; determining first collision data generated by collisions between a designated reference ion among the respective ions and material atoms of the semiconductor device during implantation; determining second collision data of respective other ions based on a comparison between surrounding material information of the other ions and surrounding material information of the reference ion; and determining a distribution state of respective ions in a simulated semiconductor material based on the first collision data and the second collision data. The technical solution of the present disclosure can effectively reduce the amount of calculation during the simulation of the ion implantation process, significantly reduce the calculation time, and improve the simulation efficiency.

Description

Technical Field

[0001] Embodiments of the present disclosure mainly relate to semiconductor devices, and more particularly, to methods, electronic devices, and storage media for ion implantation simulation. Background Art

[0002] Computer Aided Design Technology (TCAD) of semiconductor processes is a key technology for accurately predicting real process flows by simulating physical processes such as ion implantation, diffusion, and oxidation. In this process, ion implantation simulation is a core link, which uses the Monte Carlo method to simulate the collision process between ions and material atoms, so as to accurately predict the doping distribution formed after ion implantation.

[0003] Currently, ion implantation simulation based on the Monte Carlo algorithm still faces significant computational bottlenecks. Specifically, when simulating the distribution of a large number of ions in a semiconductor material, the collision process of each incident ion needs to be calculated independently. This high-complexity calculation not only consumes a large amount of time but also occupies too much computer memory resources. Therefore, there is an urgent need to develop more efficient simulation methods. Summary of the Invention

[0004] According to an exemplary embodiment of the present disclosure, a solution for ion implantation simulation is provided to at least partially overcome the above or other potential defects.

[0005] According to one aspect of the present disclosure, a method for ion implantation simulation is provided. The method includes: determining an initial position of each ion in an exposed surface of a simulated semiconductor device; determining first collision data generated by a collision between a designated reference ion among each ion and a material atom of the semiconductor device during the implantation process; determining second collision data of each other ion based on a comparison between the surrounding material information of other ions among each ion and the surrounding material information of the reference ion; and determining a distribution state of each ion in the simulated semiconductor based on the first collision data and the second collision data.

[0006] In a second aspect of the present disclosure, an electronic device is provided. The electronic device includes a processor; and a memory coupled to the processor, the memory having instructions stored therein that, when executed by the processor, cause the device to perform operations, the operations including: determining an initial position of each ion in an exposed surface of a simulated semiconductor device; determining first collision data generated by collisions of a designated reference ion among each ion with material atoms of the semiconductor device during an implantation process; determining second collision data of each other ion based on a comparison of the surrounding material information of the other ions among each ion with the surrounding material information of the reference ion; and determining a distribution state of each ion in the simulated semiconductor based on the first collision data and the second collision data.

[0007] In some embodiments, the simulated semiconductor device is divided into a plurality of three-dimensional regions including exposed surfaces according to a predetermined rule, and each region includes regions with the same material, similar or identical structures. Determining the second collision data of the other ions based on a comparison of the surrounding material information of the other ions among each ion with the surrounding material information of the reference ion includes: based on the similarity between the other region where the other ion is located and the reference region where the reference ion is located in each region and the similarity of the ranges of the collision trajectories of the reference ion and the other ion respectively, performing a translation, rotation, or mirror symmetry operation on the first collision position of the reference ion after collision in the reference region to generate a transformed collision position; and copying the transformed collision position to the corresponding other region as the collision position of the corresponding other ion.

[0008] In some embodiments, during the entire ion implantation process, the collision trajectory of the reference ion is confined to a predetermined region including at least the reference region. Determining the second collision data of the other ions based on a comparison of the surrounding material information of the other ions among each ion with the surrounding material information of the reference ion includes: in response to determining that the other region where the other ion is located has a corresponding region with the reference region, translating and copying each first collision position of each ion in the reference region to the corresponding region as the second collision position of the corresponding other ion; in response to determining that the other region where the other ion is located has a corresponding region with the reference region but has a different initial position, correspondingly moving each first collision position of the ions in the reference region based on the difference in the initial positions between the reference region and the other region and copying it to the corresponding region as the second collision position of the corresponding other ion; or in response to determining that the other region where the other ion is located has a mirror symmetry structure with the reference region, mirroring and copying the first collision position to the corresponding region as the second collision position of the corresponding other ion.

[0009] In some embodiments, the collision trajectory of the reference ion is confined to a predetermined region based on the position of each ion and the corresponding boundary information of each region.

[0010] In some embodiments, each region further includes an additional region whose structure is different from and not similar to the reference region. For the additional region, the method further includes: determining a first state of the reference ion before each collision, where the first state is related to the position, energy, velocity, and surrounding atomic information of the reference ion; determining the trajectory of the reference ion after each collision; and determining the trajectory data of the additional ion after collision based on a comparison of the state of the additional ion in the additional region with the state of the reference ion before each collision.

[0011] In some embodiments, determining the trajectory data of the additional ion after collision based on a comparison of the state of the additional ion in the additional region with the state of the reference ion before each collision includes: in response to determining that the state of the additional ion before collision is consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the additional ion as the trajectory data of the additional ion after collision; in response to determining that the state of the additional ion before collision is inconsistent with the first state of the reference ion before the corresponding collision, calculating based on the state of the additional ion before collision to determine the trajectory data of the additional ion after collision; or in response to determining that, before the corresponding collision, the state of the additional ion is consistent with the state of the reference ion except that the direction and position of the velocity are geometrically transformed relative to the direction and position of the velocity of the reference ion, performing a corresponding geometric transformation on the trajectory data of the reference ion as the trajectory data of the additional ion.

[0012] In some embodiments, determining the second collision data of other ions based on a comparison of the surrounding material information of other ions with the surrounding material information of the reference ion includes: determining a first state of the reference ion before each collision, where the first state is related to the position, energy, velocity, and surrounding atomic information of the reference ion; determining the trajectory of the reference ion after each collision; and determining the trajectory data of the other ion after collision based on a comparison of the state of the other ion with the state of the reference ion before each collision.

[0013] In some embodiments, determining the trajectory data of the other ion after collision based on a comparison of the state of the other ion with the state of the reference ion before each collision includes: in response to determining that the state of the other ion before collision is consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the other ion as the trajectory data of the other ion after collision; in response to determining that the state of the other ion before collision is inconsistent with the first state of the reference ion before the corresponding collision, calculating based on the state of the other ion before collision to determine the trajectory data of the other ion after collision; or in response to determining that, before the corresponding collision, the state of the other ion is consistent with the state of the reference ion except that the direction and position of the velocity are geometrically transformed relative to the direction and position of the velocity of the reference ion, performing a corresponding geometric transformation on the trajectory data of the reference ion as the trajectory data of the other ion.

[0014] In some embodiments, the state of other ions before collision being inconsistent with the first state of the reference ions before the corresponding collision includes at least one of the following differences: the energy of the other ions at the collision location and the energy of the reference ions at the corresponding collision location; the velocity of the other ions at the collision location and the velocity of the reference ions at the corresponding collision location; and the surrounding atom information of the other ions at the collision location and the surrounding atom information of the reference ions at the corresponding collision location.

[0015] In some embodiments, the exposed surface is evenly divided into a plurality of regions, and determining the initial positions of respective ions in the exposed surface of the simulated semiconductor device includes: generating the initial positions of the same number of ions in each region of the exposed surface respectively by the Monte Carlo algorithm.

[0016] In the third aspect of the present disclosure, there is provided a computer-readable storage medium having a computer program stored thereon, and when the program is executed by a processor, it implements the method according to the first aspect of the present disclosure.

[0017] It will be understood from the following description that the technical solutions of the present disclosure can greatly reduce the computational amount in the process of simulating ion implantation, greatly improve the scale of the simulated ion implantation and reduce the collision calculation time, and significantly improve the simulation efficiency.

[0018] The summary is provided to introduce a selection of concepts in a simplified form, which will be further described in the detailed description below. The summary is not intended to identify the key features or main features of the present disclosure, nor is it intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram showing an example environment in which embodiments of the present disclosure can be implemented;

[0020] Figure 2 A schematic diagram showing the structure of a simple 3D semiconductor device according to some embodiments of the present disclosure;

[0021] Figure 3 A schematic diagram showing the structure of a simple 2D semiconductor device according to some embodiments of the present disclosure;

[0022] Figure 4 A schematic diagram showing the structure of a complex 3D semiconductor device according to some embodiments of the present disclosure;

[0023] Figure 5 Showing according to Figure 4 The schematic diagram of the structure of the complex 2D semiconductor device obtained from the 3D semiconductor device;

[0024] Figure 6 Showing Figure 5 The schematic diagram of the exposed surface of the complex 2D semiconductor device shown;

[0025] Figure 7 Shows a flowchart of a method for ion implantation simulation according to some embodiments of the present disclosure;

[0026] Figure 8 Shows a three-dimensional ion implantation schematic diagram according to some embodiments of the present disclosure;

[0027] Figure 9 Shows a schematic diagram of a grid cell of a 3D semiconductor device according to some embodiments of the present disclosure;

[0028] Figure 10 Shows a schematic diagram of a grid cell of a simple 2D semiconductor device according to some embodiments of the present disclosure;

[0029] Figure 11 Shows according to some embodiments of the present disclosure Figure 10 Schematic diagram of uniform or non-uniform division of the shown semiconductor device;

[0030] Figure 12 Shows a schematic diagram of the value range of the initial position of ions according to some embodiments of the present disclosure;

[0031] Figure 13 Shows a schematic diagram of replicating ion collision results in similar regions according to some embodiments of the present disclosure;

[0032] Figure 14 Shows a schematic diagram of no corresponding results for incident ions in a partial region according to some embodiments of the present disclosure;

[0033] Figure 15 Shows a schematic diagram of translating all ions in a specified region as a whole to another region according to some embodiments of the present disclosure;

[0034] Figure 16 Shows a schematic diagram of data replication in a non-uniformly divided region according to some embodiments of the present disclosure;

[0035] Figure 17 Shows a schematic diagram of data replication in a non-uniformly divided region according to some other embodiments of the present disclosure;

[0036] Figure 18 Shows a schematic diagram of the structure of a semiconductor device with regional subdivision according to some embodiments of the present disclosure;

[0037] Figure 19 Shows a schematic diagram of replicating ion collision trajectories according to some embodiments of the present disclosure; and

[0038] Figure 20A block diagram of a computing device capable of implementing multiple embodiments of the present disclosure is shown.

[0039] In the various figures, the same or corresponding reference numerals denote the same or corresponding parts. Detailed implementation

[0040] The principles of the present disclosure will be described below with reference to various exemplary embodiments shown in the drawings. It should be understood that the description of these embodiments is only for enabling those skilled in the art to better understand and further implement the present disclosure, and is not intended to limit the scope of the present disclosure in any way. It should be noted that where feasible, similar or identical reference numerals may be used in the figures, and similar or identical reference numerals may represent similar or identical functions. Those skilled in the art will readily recognize that alternative embodiments of the structures and methods described herein may be employed without departing from the principles of the invention described herein.

[0041] As used herein, the term "comprising" and its variations mean open-ended inclusion, i.e., "including but not limited to". Unless otherwise specified, the term "or" means "and / or". The term "based on" means "at least partially based on". The terms "an example embodiment" and "an embodiment" mean "at least one example embodiment". The term "another embodiment" means "at least one additional embodiment". The terms "first", "second", etc. may refer to different or the same objects.

[0042] Ion implantation is a process step of implanting charged ions with a certain energy into a semiconductor material. Its advantage is that it can repeatably and precisely control the concentration distribution of doping elements in the material, which is of crucial value for the preparation of advanced semiconductor devices and device miniaturization.

[0043] There are generally two methods for ion implantation simulation: one is the analytical formula method, and the other is the Monte Carlo method. The acceleration schemes of some embodiments of the present disclosure are particularly applicable to ion implantation based on the Monte Carlo method. By simulating the ion implantation process through the Monte Carlo algorithm, the distribution of ions in the material and lattice damage can be predicted, the process parameters of ion implantation can be optimized, the experimental and R & D costs can be reduced, and a theoretical guidance basis for deeply understanding the physical process of ion implantation can be provided.

[0044] In semiconductor device simulation, the Monte Carlo simulation ion implantation scheme is applicable to 1D, 2D, and 3D device structures. Depending on the complexity of the device, different-dimensional structures can be used for simulation. Usually, due to the higher complexity of the 3D structure, the simulation time is longer.

[0045] As described above, there is a computational bottleneck in the current Monte Carlo algorithm for simulating ion implantation. The main problem lies in that when simulating the distribution of a large number of ions in a semiconductor material, the collision process of each incident ion needs to be calculated independently. Such high-complexity calculations not only consume a large amount of time but also occupy excessive computer memory resources.

[0046] In view of this, the present disclosure provides an improved solution.

[0047] Embodiments of the present disclosure provide an improved method for ion implantation simulation. The method includes: determining the initial positions of individual ions in the exposed surface of a simulated semiconductor device; determining first collision data generated by the collision of a specified reference ion among the individual ions with the material atoms of the semiconductor device during the implantation process; determining second collision data of other ions based on the comparison of the surrounding material information of other ions with the surrounding material information of the reference ion; and determining the distribution of each ion in the simulated semiconductor based on the first collision data and the second collision data. Embodiments of the present disclosure can greatly reduce the amount of calculation during the simulation of ion implantation through collision data replication, significantly increase the scale of the simulated ion implantation, and reduce the collision calculation time, thereby significantly improving the simulation efficiency.

[0048] The following will refer to Figures 1 - 20 to specifically describe embodiments of the present disclosure.

[0049] Figure 1 FIG. shows a schematic diagram of an exemplary environment 100 in which embodiments of the present disclosure can be implemented. As Figure 1 shown, the exemplary environment 100 includes a computing device 110 and a client 120.

[0050] In some embodiments, the computing device 110 can interact with the client 120. For example, the computing device 110 can receive an input message from the client 120 and output a feedback message to the client 120. In some embodiments, the input message from the client 120 can be data related to a semiconductor device. The computing device 110 can perform corresponding operations on the data related to the semiconductor device and output the corresponding operation results to the client 120.

[0051] In some embodiments, the computing device 110 can include, but is not limited to, a personal computer, a server computer, a handheld or laptop device, a mobile device (such as a mobile phone, a personal digital assistant PDA, a media player, etc.), a consumer electronic product, a minicomputer, a mainframe computer, cloud computing resources, etc.

[0052] It should be understood that describing the structure and function of the exemplary environment 100 only for illustrative purposes is not intended to limit the scope of the subject matter described herein. The subject matter described herein can be implemented in different structures and / or functions. This environment is merely illustrative and is not used to limit the application environment of the embodiments of the present disclosure.

[0053] See Figure 2 , Figure 2 which shows a schematic structural diagram of a simple 3D semiconductor device according to some embodiments of the present disclosure. The semiconductor device 202 can be sectioned through the cross-section 204 shown in Figure 2 to obtain a 2D structure.

[0054] See Figure 3 , Figure 3 which shows a schematic structural diagram of a simple 2D semiconductor device 302 according to some embodiments of the present disclosure, which can be obtained by taking a cross-section of the semiconductor device 202 through the cross-section 204 shown in Figure 2 .

[0055] Figure 4 which shows a schematic structural diagram of a complex 3D semiconductor device 402 according to some embodiments of the present disclosure. Figure 5 shows Figure 4 a schematic structural diagram of a complex 2D semiconductor device obtained from a 3D semiconductor device. Specifically, Figure 5 the structure shown is a 2D structure obtained by sectioning the device along the A-B cross-section in Figure 4 . Regarding the devices shown in Figure 4 and Figure 5 , they can be conventional semiconductor devices, and their structures are not described in detail herein.

[0056] Figure 6 shows Figure 5 a schematic diagram of the exposed surface of the complex 2D semiconductor device shown. As can be seen from Figure 6 , the surface pointed by the arrow is the exposed surface of the semiconductor device, and ion implantation is performed on this exposed surface.

[0057] In semiconductor processing, the exposed surface refers to the area on the device surface that is not covered by the mask layer and is directly exposed to the ion beam. Therefore, the "exposed surface" is used to represent the surface area where ions need to be implanted. During the simulation process, the exposed surface of the device is usually the upper surface of the device as shown in Figures 4 - 6 .

[0058] To more clearly explain the principle of the solution of the present disclosure, the following will refer to Figure 7 for a more detailed description.

[0059] Figure 7FIG. 0 shows a flowchart of an ion implantation simulation method 700 according to some embodiments of the present disclosure.

[0060] At block 702, the initial positions of individual ions are determined in the exposed surface of the simulated semiconductor device.

[0061] In the process of simulating ion implantation, it is necessary to first determine the initial positions of the ions. In other words, determining the initial positions of the ions during the simulation process is to generate the initial positions of the ions. The initial positions of the ions can be generated in various ways.

[0062] In some embodiments, the initial random positions of the incident ions on the exposed surface can be generated by the Monte Carlo algorithm. Among them, the random number generation algorithm can adopt the following methods: linear congruential method; Mersenne Twister method; generating random numbers based on a hardware entropy source; or other methods, such as a custom algorithm.

[0063] An important aspect of the Monte Carlo algorithm is to generate the initial random positions of the implanted ions according to the structure to simulate the possible ion positions in the real situation. By simulating the collision processes of a large number of ions with the material atoms, the final positions of the ions in the material are obtained, and the concentration distribution of the ions in the device is obtained.

[0064] In some embodiments, when the incident ions are implanted into a three-dimensional material along a specified direction, the exposed surface of the ion implantation can be divided into multiple regions, and each region can be numbered. The initial positions of the incident ions can be generated for each region by the Monte Carlo algorithm. Dividing the exposed surface into multiple regions is to make the initial positions random and relatively uniform, so that the randomly generated initial positions can cover each region as much as possible.

[0065] It should be understood that the embodiments of the present disclosure are not limited thereto. In some embodiments, the device may not be divided, and the initial positions of multiple randomly emitted ions are generated on the entire exposed surface.

[0066] The following is described with reference to Figure 8 FIG. Figure 8 FIG. 25 shows a schematic diagram of three-dimensional ion implantation according to some embodiments of the present disclosure.

[0067] As shown in Figure 8 FIG. 30, the incident ions are implanted into the three-dimensional material along a specified direction. The exposed surface of the three-dimensional material, that is, the exposed surface for ion implantation, is evenly divided into multiple regions, and each region is numbered, as shown in Figure 8 FIG. 31, numbered from region 1 to region 16. The initial positions of the incident ions can be generated for each region by a random algorithm, such as the Monte Carlo algorithm. The Monte Carlo algorithm is based on random numbers to generate specific data. In some embodiments of the present disclosure, these specific data are the random initial positions of the ions.

[0068] As mentioned above, the regions are divided to make the ion distribution more uniform. After dividing the regions, one or more ions can be emitted in each region to ensure that ions are emitted in each region, so that the overall can remain uniform. If the regions are not divided, the initial positions of a number of ions are randomly generated in the entire surface region. As will be further described later, in some embodiments, the divided regions can be further used to accelerate the simulation process. In some other embodiments, the divided regions are not further used to accelerate the simulation process. For these embodiments, the advantage of dividing the regions is only to make the ion distribution generated by the ions more uniform.

[0069] Regarding the region division of the device, there are various division algorithms. For example, it can be evenly divided, unevenly divided, or divided according to grid cells. Even division means that the structure is evenly divided along the YZ plane according to a specified distance. Uneven division means that the division regions are dynamically adjusted according to different materials and boundary information. Grid cell division means that based on the existing grid cells, such as by merging grid cells, the division is carried out. This division is based on the existing grid information of the structure when it is read in, and is usually implemented by a grid engine.

[0070] See Figure 9 , Figure 9 shows a schematic diagram of the grid cells of a 3D semiconductor device 202 according to some embodiments of the present disclosure, where 204 is a cross-section. Figure 10 shows a schematic diagram of the grid cells of a simple 2D semiconductor device 202 according to some embodiments of the present disclosure. The grid cells can be merged as needed for region division. For example, Figure 10 the cells in the left two columns in are taken as region 1, the cells in the middle two columns as region 2, and the cells in the right column as region 3. It should be understood that this is only an example here, and various divisions can be made according to needs.

[0071] Figure 11 shows according to some embodiments of the present disclosure the Figure 10 schematic diagram of the uniform or uneven division of the shown semiconductor device. For uniform division, the grid is not considered, and the division is directly carried out in the middle (i.e., in the middle of the third grid), that is, divided by the dashed line 1102 into two regions of the same size on the left and right. For grid division, it is always divided at the grid boundary. For example, divided by another dashed line 1104, also into two regions on the left and right, but the sizes of the two are different.

[0072] See Figure 12 , Figure 12A schematic diagram showing the value range of the initial positions of ions according to some embodiments of the present disclosure is shown. In Monte Carlo ion implantation simulation, the initial position of an ion is determined by (X, Y, Z) coordinates. The starting emission position of all particles is uniformly set to Xmin in the X direction. In the Y and Z directions, the initial coordinates of each ion are generated by random numbers, so that the starting point of each ion is different, thus more realistically simulating the ion distribution in the actual situation.

[0073] Xmin, Xmax, Ymin, Ymax, Zmin, Zmax respectively represent the minimum and maximum coordinate values of the device in three orthogonal directions, and these parameters together determine the three-dimensional boundary of the entire device structure.

[0074] The initial position of the ion (X, Z, Y) can be determined by the following formula:

[0075] X = Xmin;

[0076] Y = Ymin + (Ymax – Ymin) * RandNumber_Y;

[0077] Z = Zmin + (Zmax – Zmin) * RandNumber_Z;

[0078] RandNumber is the random number, and its value range is [0.0, 1.0].

[0079] Returning to Figure 7 , at block 704, first collision data generated by the collision of a specified reference ion among each ion with the material atoms of the semiconductor device during the implantation process is determined.

[0080] The first collision data generated by the collision of the reference ion with the material atoms of the semiconductor device during the implantation process can be determined in various ways.

[0081] In some embodiments, the energy, velocity, and position of the incident ion before and after each collision can be automatically recorded during the simulation process. In some embodiments, the energy, velocity, position, and the information of the surrounding material atoms of the incident ion before and after each collision can be automatically recorded during the simulation process. These energy, velocity, position, and the information of the surrounding material atoms can all be used as the collision state data of the ion. In order to distinguish the collision data of other ions, the collision data of the reference ion is collectively referred to as the first collision data, and the final result of its collision is directly related to this data. In addition, it should be clear that the energy and velocity of the ion after each collision are respectively the energy and velocity before the next collision.

[0082] The simulation software can calculate the collisions between incident ions and material atoms. The specific calculation method is not described in detail in this disclosure, and the binary collision approximation or other calculation methods can be used. In addition, the collision positions of each ion are recorded. Finally, the ion distribution can be determined by statistically analyzing the ion stopping positions. In other words, the doping concentration of the material can be determined by statistically analyzing the ion stopping positions. This will be described in detail later.

[0083] Referring again to Figure 8 , the ions in Region 1 can be designated as reference ions, and correspondingly, Region 1 is designated as the reference region. See also Figure 13 , Region 1 therein can be used as the reference region, and the ions therein can be used as the reference ions. There is not limited to one reference region in each device. For example, considering the symmetry of the structures of Region 4 and Region 5, one of them, such as Region 4, can also be used as the reference region.

[0084] Returning to Figure 7 , at block 706, the second collision data of other ions is determined based on the comparison of the surrounding material information of other ions with that of the reference ions among each ion.

[0085] The initial energies of the same incident ions are the same, and the velocity direction is determined by the implantation angle. Therefore, in some embodiments, the surrounding material information becomes the key information for determining the collision data. Considering the consistency of other initial information, the collision data of other ions can be determined by comparing the surrounding material information with that of the reference ions.

[0086] In some embodiments, the simulated semiconductor device is divided into multiple three-dimensional regions including exposed surfaces according to a predetermined rule. Each region includes regions with the same material, similar or the same structure. Determining the second collision data of other ions based on the comparison of the surrounding material information of other ions with that of the reference ions among each ion includes: moving, rotating, or mirror-symmetrically operating on the first collision position after the collision of the reference ions in the reference region based on the similarity between the other regions where other ions are located and the reference region where the reference ions are located and the range of the collision trajectory of the reference ions to generate a transformed collision position; and copying the transformed collision position to the corresponding other regions as the collision positions of the corresponding other ions. The range of the collision trajectory refers to the range of the region where the trajectory of the ion is located after the collision. For example, whether the position of the ion is confined to Region 1, or exceeds Region 1 and enters Region 2, or even enters Region 3, and so on.

[0087] Within different divided regions, the collision processes of incident ions in similar regions are similar. Therefore, the acceleration effect can be achieved by replicating the ion collision results of the same or similar regions. In some embodiments, during the entire ion implantation process, the collision trajectories of reference ions are confined to a predetermined region that at least includes a reference region. Determining the second collision data of other ions based on the comparison of the surrounding material information of other ions with that of the reference ions includes: when it is determined that the other region where the other ions are located has a corresponding region with the reference region, translating and then replicating each collision position of each ion in the reference region to the corresponding region as the collision positions of the corresponding other ions; when it is determined that the other region where the other ions are located has a corresponding region with the reference region but has a different initial position, correspondingly moving each collision position of the ions in the reference region based on the difference between the initial positions of the reference region and the other region and then replicating it to the corresponding region as the collision positions of the corresponding other ions; or when it is determined that the other region where the other ions are located has a mirror-symmetric structure with the reference region, mirror-symmetrically replicating the first collision position to the corresponding region as the collision positions of the corresponding other ions. This will be further described below with reference to the accompanying drawings.

[0088] In some embodiments, the similarity of different regions can be determined first. If the materials of two regions are the same and the structures and boundaries are highly similar, then this solution can be applied. The specific approach is that for incident ion 1 that never leaves region 1, the collision data of each of its collisions can be reused. When another region 2 is exactly the same or highly similar to region 1, then the collision data of incident ion 1 can be copied to incident ion 2 that collides in region 2, and only translation, rotation, or symmetry operations need to be performed on the original position data of incident ion 2. It should be understood that region 1 here is only for illustrative purposes. The mentioned region 1 can be, for example, Figure 8 region 1 in [ ], or any other region, or it can be a region that includes not only region 1 but also region 2, or even region 3, etc. In the above cases, it means that a certain or certain reference ions never leave a certain predetermined region during the entire implantation process. The predetermined region can be region 1, region 2, or a combination of region 1 and region 2, etc. Based on this feature, the collision data of ions in regions with similarity can be replicated.

[0089] It is possible to determine whether a certain incident ion has left a certain predetermined area in the following way: Each area has boundary information. For area A (Xmin, Xmax, Ymin, Ymax, Zmin, Zmax), the ion position (x, y, z) is within area A when Xmin <= x <= Xmax and Ymin <= y <= Ymax and Zmin <= z <= Zmax, where x, y, and z represent coordinates in a rectangular coordinate system. Otherwise, it means the ion has left area A.

[0090] In some embodiments, it is possible to determine that the collision trajectory of a reference ion is confined within a predetermined area based on the positions of the respective ions and the corresponding boundary information of the respective areas, such as in the predetermined area 1 mentioned above.

[0091] In some embodiments, each area further includes additional areas with structures that are different from and not similar to the reference area. For the additional areas, since the structures are different from and not similar to the reference area, it is impossible to directly copy the collision data of the corresponding reference particles. For the additional areas, the data after collision can be determined in the following way: Determine the first state of the reference ion before each collision, where the first state is related to the position, energy, velocity, and surrounding atomic information of the reference ion; determine the trajectories of the reference ion after each collision; determine the trajectory data of the additional ion after collision based on the comparison of the state of the additional ion in the additional area with the state of the reference ion before each collision.

[0092] In some embodiments, determining the trajectory data of the additional ion after collision based on the comparison of the state of the additional ion in the additional area with the state of the reference ion before each collision includes: When it is determined that the state of the additional ion before collision is the same as the first state of the reference ion before the corresponding collision, copy the corresponding trajectory data of the reference ion after collision to the additional ion as the trajectory data of the additional ion after collision; when it is determined that the state of the additional ion before collision is different from the first state of the reference ion before the corresponding collision, calculate based on the state of the additional ion before collision to determine the trajectory data of the additional ion after collision; or when it is determined that, before the corresponding collision, except that the direction of velocity and the position have undergone a geometric transformation relative to the direction of velocity and the position of the reference ion, the state of the additional ion is the same as the state of the reference ion, perform the corresponding geometric transformation on the trajectory data of the reference ion and use it as the trajectory data of the additional ion.

[0093] In some embodiments, determining the second collision data of other ions based on the comparison between the surrounding material information of other ions and that of a reference ion among each ion may include: determining a first state of the reference ion before each collision, where the first state is related to the position, energy, velocity, and surrounding atomic information of the reference ion; determining the trajectories of the reference ion after each collision; and determining the trajectory data of other ions after collision based on the comparison of the states of other ions and the reference ion before each collision.

[0094] In some embodiments, determining the trajectory data of other ions after collision based on the comparison of the states of other ions and the reference ion before each collision includes: when it is determined that the state of other ions before collision is consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to other ions as the trajectory data of other ions after collision; when it is determined that the state of other ions before collision is inconsistent with the first state of the reference ion before the corresponding collision, calculating based on the state of other ions before collision to determine the trajectory data of other ions after collision; or when it is determined that before the corresponding collision, except that the direction of velocity and the position geometrically transform relative to the direction of velocity and the position of the reference ion, the state of other ions is consistent with the state of the reference ion, performing the corresponding geometric transformation on the trajectory data of the reference ion as the trajectory data of other ions.

[0095] In some embodiments, the state of other ions before collision being inconsistent with the first state of the reference ion before the corresponding collision includes at least one of the following differences: the energy of other ions at the collision location and the energy of the reference ion at the corresponding collision location; the velocity of other ions at the collision location and the velocity of the reference ion at the corresponding collision location; and the surrounding atomic information of other ions at the collision location and the surrounding atomic information of the reference ion at the corresponding collision location.

[0096] In some embodiments, the exposed surface is evenly divided into multiple regions, and determining the initial positions of each ion in the exposed surface of the simulated semiconductor device may include: respectively generating the initial positions of the same number of ions in each region of the exposed surface through the Monte Carlo algorithm. Thus, the initial positions of each ion can be generated evenly.

[0097] At block 708, determine the distribution of each ion in the simulated semiconductor based on the first collision data and the second collision data.

[0098] By determining the final positions of each ion, the final distribution of each ion can be obtained, that is, the concentration distribution of the doping element in the material can be obtained.

[0099] The following refers to Figure 13 Specifically describe the collision result copying scheme of some embodiments of the present disclosure. Figure 13Shows a schematic diagram of replicating the results of ion collisions in similar regions according to some embodiments of the present disclosure. Figure 13 On the left side, each region is shown, and on the right side, the replication of the collision data is shown. As Figure 13 shown, the structure is divided into 5 regions, namely, Region 1 to Region 5, where Region 1 and Region 2 have exactly the same structure (or size), and the only difference between Region 3 and Region 1 and Region 2 is that its height is lower than that of Region 1 and Region 2. In other words, the difference between Region 3 and Region 1 and Region 2 is that Region 3 translates the initial position downward to the right. Region 4 and Region 5 are mirror-symmetrical. The ions in Region 1 can be designated as reference ions, and correspondingly, Region 1 can be called the reference region. It should be understood that there can be more than one reference region and reference ions in a region. In fact, there can be multiple reference regions and multiple reference ions. For example, Region 4 can be used as the reference for Region 5.

[0100] Figure 13 In, since the materials and structures of Region 1 and Region 2 are basically the same, the collision situations of the ions satisfying the above conditions in these two regions are basically the same. The ion collision positions in Region 1 can be replicated to the ions in Region 2 through a right translation operation. The only difference between Region 3 and Region 1 is that Region 3 translates the initial position downward to the right. Therefore, the collision positions of the ions can be replicated after being translated downward to the right. Due to the mirror symmetry between Region 4 and Region 5, the ion collision positions in Region 4 can be replicated to the ions in Region 5 after being mirror-symmetrical.

[0101] In some embodiments, the collision situation may include the position of the incident ions during the collision, the position of the target atoms, the collision angle, the collision energy loss, and the collision damage. The two-body collision approximation or other calculation methods can be used to calculate the collision situation.

[0102] As mentioned above, in order to distinguish the collision data of other ions, the collision data of the first ions are collectively referred to as the first collision data, and the final result of the collision is directly related to this data.

[0103] In some embodiments, the sizes of other regions are less than or equal to the size of the reference region, so that the collision data of all the reference ions in the reference region or the collision data of the corresponding size part of the other regions can be replicated into the other regions.

[0104] For simple two-dimensional and three-dimensional structures, due to the high symmetry and similarity of their structures themselves, the solutions of the above embodiments can greatly reduce the calculation amount and obtain accurate results.

[0105] Figure 14 Shows a schematic diagram of no corresponding results for incident ions in some regions according to some embodiments of the present disclosure.

[0106] Within the divided different regions, the collision processes of incident ions in similar regions are similar. Therefore, the acceleration effect can be achieved by copying the ion collision results in similar regions. As mentioned before, this scheme will first determine the similarity of different regions. If the materials of two regions are the same and the structures and boundaries are highly similar, this scheme can be applied.

[0107] If the incident ions leave the reference region and enter the adjacent region during the collision process, and even if other regions have the same or similar structure as the reference region but do not have corresponding adjacent regions, the scheme of the above-mentioned embodiment cannot be applied.

[0108] As Figure 14 shown, the incident ions enter from region 1 into region 2, and region 2 does not have a corresponding structure because its adjacent region 3 is different from region 2. Therefore, the collision data of the ions in region 1 cannot be copied to the ions in region 2, that is, the scheme of the above-mentioned embodiment cannot be applied. For this situation, a more detailed acceleration scheme can be further adopted, that is, the local ion collision trajectory replication mentioned below. The following will refer to Figure 19 for description.

[0109] For Figure 14 example, assume that region 3 has the same structure as region 2, there is a region 4 behind region 3, and region 4 is the same as region 3 in the current figure. This is equivalent to region 2 having a corresponding structure. In this case, the above-mentioned scheme of copying collision data can be applied to region 2. That is to say, in the case of no corresponding structure, the direct copying scheme cannot be adopted. If there is a corresponding structure, the direct copying scheme can be adopted. That is, if the ions only move within region 1, then the structures of region 2 and region 1 are the same, and the collision results can be copied. If the ions move from region 1 to region 2, it is necessary to satisfy that region 2 is consistent with region 1 and region 3 is consistent with region 2, that is, regions 1, 2, and 3 are all consistent to copy the results. If region 3 is inconsistent with region 2, that is, the above conditions cannot be satisfied, the collision data cannot be copied.

[0110] In fact, the collision data of different particles in the same region will all be different. For example, there are 10 ions (A1, B1, C1, D1 …) with different initial positions in region 1, and finally the 10 ions will all be distributed at different positions in region 1. During replication, in fact, all the ions in region 1 are translated as a whole to region 2. The replication operation assumes that the initial positions of the 10 ions in region 2 are the same as those in region 1. The Monte Carlo algorithm itself describes the macroscopic results of a large number of ions. In the case of a large number of ions, the ion distributions of similar structures are roughly similar. This ensures the reliability of this replication operation in the embodiments of the present disclosure.

[0111] See Figure 15 , Figure 15Shows a schematic diagram of globally translating all ions in a specified area to another area according to some embodiments of the present disclosure. As Figure 15 shown, in which two ions, namely ion A and ion B, are shown. Since area 2 is exactly the same as area 1, ion A and ion B in area 1 (i.e., the data of ion A and ion B) can be globally translated into area 2, as Figure 15 shown by the trajectories of A' and B' in area 2 in

[0112] Figure 16 Shows a schematic diagram of data replication in a non-uniformly divided area according to some embodiments of the present disclosure. Figure 17 Shows a schematic diagram of data replication in a non-uniformly divided area according to some other embodiments of the present disclosure.

[0113] In the case of uniform division, the sizes of different areas are basically the same. Collision data replication can be performed according to the method of the foregoing embodiments. However, simple replication is not possible for different areas. Assume that area 1 is the area to be replicated, and area 2 needs to replicate the ion data results in area 1. If area 1 is larger than area 2, then area 2 can replicate the corresponding part of the results in area 1 (dashed lines indicate). If area 1 is smaller than area 2, then replication is not possible. Assume that the area with a large volume is the global area, and the area with a small volume is the local area. Essentially, the local data of the global area data can be replicated to other similar local areas without causing data loss, and the large area can always contain all the data information required by the small area. However, when the data of the small area is replicated to the large area, there is no data in the remaining positions of the large area, and simulation needs to be performed again.

[0114] Figure 18 Shows a schematic diagram of the structure of a semiconductor device for performing area subdivision according to some embodiments of the present disclosure.

[0115] Since the structural components of semiconductor devices are usually relatively complex, the following figure is used as an example for illustration. First, it should be noted that usually, the simulation coordinate system is X along the ion implantation depth direction, and Y and Z are parallel and perpendicular to the screen direction respectively. The upper boundaries in the Y direction and Z direction (not shown in the figure, orthogonal to the X and Y directions) of silicon dioxide (SiO2) and silicon (Si) can be used as the division points, so that large areas can be divided. To meet the replication requirements, further subdivision can be performed. For example, area 1 can be further divided into areas 1-1 and 1-2, and area 2 can be further divided into areas 2-1 and 2-2. Then, since area 3 and 1-2 are similar to area 1-1, the data of 1-1 can be replicated, and since area 2-2 is similar to area 2-1, the data of area 2-1 can be replicated.

[0116] Figure 19 Shows a schematic diagram of ion collision trajectory replication according to some embodiments of the present disclosure.

[0117] Before and after each collision of the incident ion with the lattice atoms, information such as the energy, velocity, position, and surrounding material atoms of the ion will be recorded as the collision state data of the ion, and the final result of the collision is directly related to this data. If the energies, velocities, and surrounding atom information of two incident ions are the same, and only the position has a geometric transformation, the magnitudes of the energy and velocity after the collision will remain the same, but the velocity direction and position after the collision will undergo corresponding geometric transformations.

[0118] In some embodiments of the present disclosure, the input parameters will specify the ion name, implantation energy, implantation dose, and implantation angle. Incident ions of the same type have the same mass, the same initial energy, the same velocity magnitude, and the velocity direction is calculated through the implantation angle. In the actual process, there is a divergence angle in the implanted ion beam, so the velocity direction will be calculated according to the default or specified divergence angle. All the examples illustrated in the above embodiments are of the same type of ion. The present disclosure supports the simultaneous implantation of different types of ions, and the replication of data will only be carried out between ions of the same type.

[0119] Therefore, in this embodiment, if other incident ions have a collision state similar to that of this incident ion before the collision, then the position data after the collision, that is, the collision trajectory data, can be directly copied, thus saving the construction of the physical model and the calculation of mathematical equations during the collision.

[0120] Such as Figure 19 As shown, the information of each collision of the incident ion A is recorded, including the first collision state A1, the second collision state A2, the third collision state A3, and the final state A4. From A1 to A4 includes all the collision trajectory information of the incident ion A.

[0121] If the incident ion B has energy, velocity, and surrounding atom information similar to those of A1 at B1, then the trajectory data of A2 can be directly copied. The position data of A2 is translated to become the position data of B2, and the energy and velocity of B2 after the collision are the same as those of A2.

[0122] That is to say, when the state of the other ion before the collision is the same as the first state of the reference ion, the corresponding trajectory data after the collision of the reference ion can be copied to the other ion. For example, if the states before the first collision are the same, then the trajectory after the first collision is copied to the other ion.

[0123] Next, check the surrounding atom information of B2 and find that it is the same as that of A2. Therefore, the collision states of B2 and A2 are the same, and only the position is translated. The trajectory data of A3 can be copied to B3, and so on.

[0124] For the incident ion C, it can copy the data of A1 and A2 both at C1 and C2. However, the surrounding atomic information is different from A3 at C3. Therefore, this collision process needs to be calculated to obtain the data of C4.

[0125] For the incident ion D, both its position and velocity direction at D1 have undergone a geometric transformation with respect to A1. Therefore, corresponding geometric transformations need to be performed on both the position and velocity direction during subsequent trajectory replication.

[0126] The solution of this embodiment can effectively reduce the construction of physical models and the calculation of mathematical equations during collisions and obtain accurate results by detecting the state data before ion collisions and replicating the trajectory data.

[0127] In this embodiment, during the collision process, it is determined whether the data of a certain collision can be replicated each time a collision occurs. Once it does not meet the requirements, the replication is terminated, and the collision calculation formula is used for calculation until the ion finally stops. Therefore, during this process, if lucky, all the trajectories of the ion can be replicated; otherwise, only a certain segment of the trajectory can be replicated. In practice, since the initial velocities and energies of the injected ions are basically the same, for ions with the same surrounding atomic information, the energies and velocities after collisions remain the same. Therefore, during the injection process, the surrounding atomic information can be determined only at the collision points (such as before and after the collision). Different atomic information will result in different collision data.

[0128] Figure 19 The circled numbers 1 - 4 in the figure represent different situations of the collision process. For example, circles 1 and 2 represent collision trajectories that satisfy the replication conditions with translational symmetry, and circle 3 represents the situation where the first two collisions (C1, C2) can be replicated, but the last two collisions (C3, C4) do not meet the replication conditions (due to different surrounding atomic environments during the collision). Circle 4 represents collision trajectories that satisfy the replication conditions with mirror symmetry.

[0129] The meanings of the collision positions and collision trajectories mentioned above are basically the same. The collision position focuses on a single position, while the trajectory focuses on representing a set of consecutive collision positions before and after. Interchanging or unifying the above terms in the description above can still correctly express the meaning of the solution of the embodiment of the present application.

[0130] In some embodiments of the present disclosure, through "copying the collision results in similar regions" and "replicating ion collision trajectories", the calculation amount during the simulation of the ion implantation process can be greatly reduced, enabling large-scale simulation of 2D and 3D simulation processes. On the premise of ensuring calculation accuracy, the scale of the simulated ion implantation is greatly improved, and the collision calculation time is reduced, which plays a key role in improving the efficiency of the simulated ion implantation process.

[0131] Figure 13The "similar region collision result replication" scheme (hereinafter referred to as Scheme 1) shown and Figure 19 compared with the "ion collision trajectory replication" scheme (hereinafter referred to as Scheme 2) shown, in terms of speed, it is more efficient. Because, due to the structural consistency of this scheme, when it meets the situation of Scheme 1, it can directly copy the data results of each ion collision, including the position of the incident ion at the time of collision, the position of the target atom, the collision angle, the collision energy loss, and the collision damage. Only the position data needs to be operated according to symmetry. There is no need to consider the specific collision process in the middle each time.

[0132] Figure 19 The "ion collision trajectory replication" scheme shown can be applied to any situation. In this scheme, there is no need to consider dividing the region.

[0133] Considering the efficiency factor, for example, in some regions, Scheme 1 can be applied, while in some regions, Scheme 1 cannot be applied. We can first process the regions that can apply Scheme 1 through Scheme 1, and then process the remaining regions with Scheme 2.

[0134] The simulation acceleration method for the ion implantation process in the embodiments of the present disclosure is used for the ion implantation module of the TCAD simulation software.

[0135] In some embodiments of the present disclosure, it is described that by applying the "similar region collision result replication" and the "ion collision trajectory replication", the calculation acceleration of ion implantation simulation is achieved. Both schemes can be carried out independently, or Scheme 2 can be further adopted in Scheme 1 to achieve a more efficient acceleration process.

[0136] Some embodiments of the present disclosure propose an acceleration calculation method for ion implantation based on Monte Carlo simulation, which can greatly reduce the repeatable calculation process, and on the premise of not affecting the result accuracy, greatly save the calculation time and improve the calculation scale.

[0137] Some embodiments of the present disclosure provide a method for ion implantation simulation. It should be noted that the examples given in the above embodiments are only for illustrating the schemes of the embodiments of the present disclosure and do not limit the schemes of the present disclosure.

[0138] It should be understood that the embodiments shown in the drawings are only for schematically showing the schemes of some embodiments of the present disclosure and do not limit the present disclosure. The embodiments of the present disclosure can also have various other forms.

[0139] Embodiments of the present disclosure also disclose an electronic device. The electronic device includes: a processor; and a memory coupled to the processor, the memory having instructions stored therein that, when executed by the processor, cause the device to perform operations, the operations including: determining initial positions of respective ions in an exposed surface of an emulated semiconductor device; determining first collision data generated by collisions of a specified reference ion among the respective ions with material atoms of the semiconductor device during an implantation process; determining second collision data of other ions based on a comparison between surrounding material information of the other ions and surrounding material information of the reference ion among the respective ions; and determining a distribution state of the respective ions in the emulated semiconductor based on the first collision data and the second collision data.

[0140] Embodiments of the present disclosure also disclose a computer-readable storage medium having stored thereon a computer program that, when executed by a processor, implements a method for ion implantation simulation according to embodiments of the present disclosure.

[0141] Figure 20 A schematic block diagram of an electronic device according to some exemplary embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as, for example, a laptop computer, a desktop computer, a workbench, a personal digital assistant, a server, a blade server, a mainframe computer, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as, for example, a personal digital processor, a cellular phone, a smart phone, a wearable device, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely exemplary and are not intended to limit the implementations of the present disclosure described and / or claimed herein.

[0142] As Figure 20 shown, the device 2000 includes a CPU 2001 that can perform various appropriate operations and processes according to a computer program stored in a read-only memory (ROM) 2002 or a computer program loaded from a storage unit 2008 into a random access memory (RAM) 2003. In the RAM 2003, various programs and data required for operation of the device 2000 can also be stored. The CPU 2001, the ROM 2002, and the RAM 2003 are connected to each other via a bus 2004. An input / output (I / O) interface 2005 is also connected to the bus 2004.

[0143] Multiple components in device 2000 are connected to I / O interface 2005. The multiple components include: an input unit 2006, such as a keyboard, a mouse, etc.; an output unit 2007, such as various types of displays, speakers, etc.; a storage unit 2008, such as a disk, an optical disc, etc.; and a communication unit 2009, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 2009 allows device 2000 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks.

[0144] Each of the processes and treatments described above, such as method 700, can be executed by CPU 2001. For example, in some embodiments, method 700 can be implemented as a computer software program that is tangibly contained in a machine-readable medium, such as storage unit 2008. In some embodiments, part or all of the computer program can be loaded and / or installed onto device 2000 via ROM 2002 and / or communication unit 2009. When the computer program is loaded into RAM 2003 and executed by CPU 2001, one or more steps of method 700 described above can be executed.

[0145] The solutions according to the embodiments of the present disclosure can be a method, an apparatus, a system, and / or a computer program product. The computer program product can include a computer-readable storage medium having thereon computer-readable program instructions for performing various aspects of the present disclosure. The computer-readable storage medium can be a tangible device that can hold and store instructions used by an instruction execution device. The computer-readable program instructions can be downloaded from the computer-readable storage medium to various computing / processing devices, or downloaded to an external computer or an external storage device via a network, such as the Internet, a local area network, a wide area network, and / or a wireless network.

[0146] The embodiments of the present disclosure have been described above. The above description is exemplary and is only an optional embodiment of the present disclosure, not exhaustive, and is not used to limit the present disclosure. Although the claims in this application have been formulated for specific combinations of features, it should be understood that the scope of the present disclosure also includes any novel feature or any novel combination of features that are explicitly or implicitly disclosed herein or any generalization thereof, regardless of whether it relates to the same solution in any of the currently claimed claims. It should be understood that new claims can be formulated for these features and / or these combinations of features during the examination process of this application or in any further application derived therefrom.

[0147] The selection of the terms used in this document is intended to best explain the principles of the various embodiments, their practical applications, or the improvement of technologies in the market, or to enable other ordinary technicians in the technical field to understand the various embodiments disclosed in this document. For those skilled in the art, various changes and modifications can be made to this disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this disclosure shall be included within the scope of protection of this disclosure.

Claims

1. A method for ion implantation simulation, comprising: Determining initial positions of respective ions in an exposed surface of a simulated semiconductor device; Determining first collision data generated by collisions of a designated reference ion among the respective ions with material atoms of the semiconductor device during implantation; Determining second collision data of respective other ions based on a comparison between surrounding material information of the other ions and surrounding material information of the reference ion among the respective ions, wherein the first collision data is copied as the second collision data of the other ions having the same comparison result; And Determining a distribution state of respective ions in the simulated semiconductor based on the first collision data and the second collision data.

2. The method according to claim 1, wherein the simulated semiconductor device is divided into a plurality of three-dimensional regions including the exposed surface according to a predetermined rule, and each of the regions includes regions having the same material, similar or identical structures, and wherein determining the second collision data of the other ions based on the comparison between the surrounding material information of the other ions and the surrounding material information of the reference ion among the respective ions includes: Based on the similarity between the other region where the other ion is located and the reference region where the reference ion is located in each region and the similarity of the ranges of the respective collision trajectories of the reference ion and the other ion, performing operations such as moving, rotating or mirror symmetry on the first collision position after the collision of the reference ion in the reference region to generate a transformed collision position; And Copying the transformed collision position into the corresponding other region as the collision position of the corresponding other ion.

3. The method according to claim 2, wherein during the entire ion implantation process, the collision trajectory of the reference ion is confined to a predetermined region including at least the reference region, and determining the second collision data of the other ions based on the comparison between the surrounding material information of the other ions and the surrounding material information of the reference ion among the respective ions includes: In response to determining that the other region where the other ion is located has a corresponding region with the reference region, translating and copying each first collision position of each ion in the reference region into the corresponding region as the second collision position of the corresponding other ion; In response to determining that the other region where the other ion is located has a corresponding region with the reference region but has a different initial position, correspondingly moving each first collision position of the ions in the reference region based on the difference in the initial positions between the reference region and the other region and copying it into the corresponding region as the second collision position of the corresponding other ion; Or In response to determining that the other region where the other ion is located has a mirror symmetry structure with the reference region, mirror-symmetry the first collision position and copy it into the corresponding region as the second collision position of the corresponding other ion.

4. The method according to claim 3, wherein determining that the collision trajectory of the reference ion is confined to the predetermined region is based on the position of each ion and the corresponding boundary information of each region.

5. The method according to any one of claims 2 to 4, wherein each of the regions further includes an additional region whose structure is different from and dissimilar to that of the reference region, and for the additional region, the method further includes: Determining a first state of the reference ion before each collision, the first state being related to the position, energy, velocity, and surrounding atomic information of the reference ion; Determining the trajectory of the reference ion after each collision; Determining the trajectory data of the additional ion after collision based on a comparison of the states of the additional ion and the reference ion before each respective collision in the additional region.

6. The method according to claim 5, wherein determining the trajectory data of the additional ion after collision based on a comparison of the states of the additional ion and the reference ion before each collision in the additional region includes: In response to determining that the state of the additional ion before collision is the same as the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the additional ion as the trajectory data of the additional ion after collision; In response to determining that the state of the additional ion before collision is different from the first state of the reference ion before the corresponding collision, calculating based on the state of the additional ion before collision to determine the trajectory data of the additional ion after collision; Or In response to determining that, before the corresponding collision, except that the directions of the position and velocity are geometrically transformed relative to the directions of the position and velocity of the reference ion, the state of the additional ion is the same as the state of the reference ion, performing a corresponding geometric transformation on the trajectory data of the reference ion as the trajectory data of the additional ion.

7. The method according to claim 1, wherein determining the second collision data of the other ions based on a comparison of the surrounding material information of the other ions and the surrounding material information of the reference ion among the respective ions includes: Determining a first state of the reference ion before each collision, the first state being related to the position, energy, velocity, and surrounding atomic information of the reference ion; Determining the trajectory of the reference ion after each collision; Determining the trajectory data of the other ions after collision based on a comparison of the states of the other ions and the reference ion before each collision.

8. The method according to claim 7, wherein determining the trajectory data of the other ions after collision based on a comparison of the states of the other ions and the reference ion before each collision includes: In response to determining that the state of the other ion before collision is the same as the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the other ion as the trajectory data of the other ion after collision; In response to determining that the state of the other ion before collision is different from the first state of the reference ion before the corresponding collision, calculating based on the state of the other ion before collision to determine the trajectory data of the other ion after collision; Or In response to determining that, before the corresponding collision, the states of the other ions are consistent with the state of the reference ion, except that a geometric transformation has occurred to the directions of the position and velocity of the other ions relative to the directions of the position and velocity of the reference ion, perform a corresponding geometric transformation on the trajectory data of the reference ion and use it as the trajectory data of the other ions.

9. The method according to claim 8, wherein the state of the other ions before the collision being inconsistent with the first state of the reference ion before the corresponding collision includes at least one of the following differences: The energy of the other ions at the collision location and the energy of the reference ion at the corresponding collision location; The velocity of the other ions at the collision location and the velocity of the reference ion at the corresponding collision location; and The surrounding atom information of the other ions at the collision location and the surrounding atom information of the reference ion at the corresponding collision location.

10. The method according to claim 1, wherein the exposed surface is evenly divided into a plurality of regions, and determining the initial positions of the respective ions in the exposed surface of the simulated semiconductor device includes: Generating the initial positions of the same number of ions in each of the regions of the exposed surface through the Monte Carlo algorithm.

11. An electronic device, comprising: A processor; And A memory coupled to the processor, the memory having instructions stored therein, which when executed by the processor cause the device to perform operations, the operations including: Determining the initial positions of the respective ions in the exposed surface of the simulated semiconductor device; Determining first collision data generated by the collision of a designated reference ion among the respective ions with the material atoms of the semiconductor device during the implantation process; Determining second collision data of each of the other ions based on a comparison of the surrounding material information of the other ions with the surrounding material information of the reference ion, wherein the first collision data is copied as the second collision data of the other ions having the same comparison result; and Determining the distribution status of the reference ion and the other ions in the simulated semiconductor based on the first collision data and the second collision data.

12. The electronic device according to claim 11, wherein the simulated semiconductor device is divided into a plurality of three-dimensional regions including the exposed surface according to a predetermined rule, and each of the regions includes regions with the same material, similar or the same structure, and wherein determining the second collision data of the other ions based on a comparison of the surrounding material information of the other ions with the surrounding material information of the reference ion includes: Performing a translation, rotation, or mirror symmetry operation on the first collision position of the reference ion after the collision in the reference region to generate a transformed collision position based on the similarity of the other region where the other ions are located and the reference region where the reference ion is located in each region and the similarity of the ranges of the collision trajectories of the reference ion and the other ions; And Copying the transformed collision position into the corresponding other region as the collision position of the corresponding other ion.

13. The electronic device according to claim 12, wherein during the entire ion implantation process, the collision trajectory of the reference ions is confined to a predetermined area that at least includes the reference area, and determining the second collision data of the other ions based on the comparison between the surrounding material information of the other ions and the surrounding material information of the reference ions in each ion includes: In response to determining that the other area where the other ions are located has a corresponding area with the reference area, translating and copying each first collision position of each ion in the reference area to the corresponding area as the second collision position of the corresponding other ions; In response to determining that the other area where the other ions are located has a corresponding area with the reference area but has a different initial position, correspondingly moving and copying each first collision position of the ions in the reference area based on the difference between the initial positions of the reference area and the other area to the corresponding area as the second collision position of the corresponding other ions; Or In response to determining that the other area where the other ions are located has a mirror symmetry structure with the reference area, mirror-symmetrically copying the first collision position to the corresponding area as the second collision position of the corresponding other ions.

14. The electronic device according to claim 13, wherein it is determined that the collision trajectory of the reference ions is confined to the predetermined area based on the positions of the respective ions and the corresponding boundary information of the respective areas.

15. The electronic device according to any one of claims 12 to 14, wherein each area further includes an additional area with a structure different from and dissimilar to the reference area. For the additional area, the operation further includes: Determining the first state of the reference ion before each collision, the first state being related to the position, energy, velocity, and surrounding atom information of the reference ion; Determining the trajectory of the reference ion after each collision; Determining the trajectory data of the additional ions after collision based on the comparison between the states of the additional ions and the reference ion before each collision in the additional area.

16. The electronic device according to claim 15, wherein determining the trajectory data of the additional ions after collision based on the comparison between the states of the additional ions and the reference ion before each collision includes: In response to determining that the state of the additional ion before collision is the same as the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the additional ion as the trajectory data of the additional ion after collision; In response to determining that the state of the additional ion before collision is different from the first state of the reference ion before the corresponding collision, calculating based on the state of the additional ion before collision to determine the trajectory data of the additional ion after collision; Or In response to determining that, before the corresponding collision, in addition to the directions of the position and velocity undergoing a geometric transformation relative to the directions of the position and velocity of the reference ion, the state of the additional ion is consistent with the state of the reference ion, perform a corresponding geometric transformation on the trajectory data of the reference ion and use it as the trajectory data of the additional ion.

17. The electronic device according to claim 11, wherein determining the second collision data of the other ion based on a comparison of the surrounding material information of the other ions among the respective ions with the surrounding material information of the reference ion includes: Determine the first state of the reference ion before each collision, the first state being related to the position, energy, velocity, and surrounding atomic information of the reference ion; Determine the trajectory of the reference ion after each collision; Determine the trajectory data of the other ion after the collision based on a comparison of the state of the other ion with the state of the reference ion before each collision.

18. The electronic device according to claim 17, wherein determining the trajectory data of the other ion after the collision based on a comparison of the state of the other ion with the state of the reference ion before each collision includes: In response to determining that the state of the other ion before the collision is consistent with the first state of the reference ion before the corresponding collision, copy the corresponding trajectory data of the reference ion after the collision to the other ion as the trajectory data of the other ion after the collision; In response to determining that the state of the other ion before the collision is inconsistent with the first state of the reference ion before the corresponding collision, perform calculations based on the state of the other ion before the collision to determine the trajectory data of the other ion after the collision; Or In response to determining that, before the corresponding collision, in addition to the directions of the position and velocity undergoing a geometric transformation relative to the directions of the position and velocity of the reference ion, the state of the other ion is consistent with the state of the reference ion, perform a corresponding geometric transformation on the trajectory data of the reference ion and use it as the trajectory data of the other ion.

19. The electronic device according to claim 18, wherein the state of the other ion before the collision being inconsistent with the first state of the reference ion before the corresponding collision includes at least one of the following differences: The energy of the other ion at the collision location and the energy of the reference ion at the corresponding collision location; The velocity of the other ion at the collision location and the velocity of the reference ion at the corresponding collision location; and The surrounding atomic information of the other ion at the collision location and the surrounding atomic information of the reference ion at the corresponding collision location.

20. A computer-readable storage medium having machine-executable instructions stored thereon, which when executed by a processor cause the processor to implement the method according to any one of claims 1 to 10.

Images