IGBT module, preparation method thereof and semiconductor device

Abstract

The invention provides an IGBT (Insulated Gate Bipolar Translator) module, a preparation method thereof and a semiconductor device, and relates to the field of semiconductors. The preparation method of the IGBT module comprises the following steps: firstly, providing a carrier plate, and forming a plurality of through holes along the thickness direction of the carrier plate; then, conductive members are implanted into the through holes such that both ends of each conductive member are exposed out of the carrier plate, thereby forming an assembly. Thirdly, providing a wafer, and arranging a plurality of conductive bumps which are arranged at intervals on at least one surface of the wafer in the thickness direction; and the wafer is attached to the carrier plate, it is ensured that one end of each conductive piece makes contact with the corresponding conductive protruding block, and therefore the piece to be sintered is formed. And finally, sintering the to-be-sintered part to obtain the IGBT module. According to the method provided by the invention, the contact resistance and the thermal resistance generated in the bonding process of the wafer are remarkably reduced, so that the heat generated when the chip works is effectively reduced. By optimizing thermal management, the reliability and the stability of the IGBT module are remarkably improved, and the IGBT module adapts to the ever-increasing requirements for high-performance semiconductor devices.

Description

Technical Field

[0001] The present application relates to the semiconductor field, and in particular focuses on the preparation technology of high-efficiency insulated gate bipolar transistor (IGBT) modules and their application in semiconductor devices. Background Art

[0002] Insulated Gate Bipolar Transistor (IGBT) modules are key components of modern power electronics technology and have received widespread attention for their outstanding performance in applications such as high-efficiency power conversion, speed control, and motor drive. Compared with traditional bipolar transistors and field-effect transistors, IGBTs have higher switching speeds and better conduction characteristics. They can operate stably under high voltage and high current conditions, making them play a vital role in many fields such as industrial automation, power systems, renewable energy, and electric transportation. However, the performance of IGBT modules is often limited by factors such as their packaging technology, preparation process, and material selection.

[0003] At present, the traditional IGBT module preparation method mostly uses wire bonding technology to achieve electrical connection between wafers. This technology relies on the physical bonding of copper wires. Although it can ensure good electrical connection to a certain extent, it often causes overheating of the chip during operation due to the contact resistance generated during the wire connection process and the thermal resistance of the connection point. Specifically, the larger contact resistance not only reduces the energy efficiency of the module, but more importantly, it will cause increased power loss, thereby affecting the overall reliability and stability of the equipment. Studies have found that the heat accumulation caused by contact resistance may even cause damage or failure of the wafer, and in severe cases may even cause equipment failure.

[0004] In order to overcome the limitations of traditional packaging technology, researchers have begun to explore new packaging materials and processes to enhance connection reliability in recent years. This application aims to provide an improved method for preparing IGBT modules, which can effectively reduce contact resistance and thermal resistance, thereby improving the overall performance and working stability of the module to meet the growing demand for high-efficiency power conversion. This new preparation method can not only promote the development of IGBT modules, but also has important academic and application value for the development of power electronic devices as a whole. Summary of the invention

[0005] The present application provides a method for preparing a high-performance IGBT module and the design of its related semiconductor devices, aiming to solve the problem of large contact resistance generated during the wire bonding process in the prior art, which may cause significant heat generation when the device is working, thereby causing the chip temperature to be too high, and ultimately causing its performance to be seriously degraded.

[0006] The first aspect of the present application provides a method for preparing an IGBT module, which mainly comprises the following steps:

[0007] 1. Carrier board preparation: First, a carrier board is provided, and a plurality of through holes are opened along the thickness direction of the carrier board to provide space for the subsequent implantation of conductive parts.

[0008] 2. Conductive member implantation: Conductive members are implanted in a plurality of through holes respectively, ensuring that both ends of each conductive member are exposed on the surface of the carrier to form an assembly. In a specific implementation, conductive members of various diameters may be provided, and the diameters of these conductive members are smaller than the diameters of the corresponding through holes. After implantation, a certain distance is left between the conductive member and the inner wall of the through hole to form a spacing space.

[0009] 3. Conductive glue filling: Fill the above-mentioned spacing with conductive glue to ensure the stability of the conductive parts and good electrical connection.

[0010] 4. Wafer preparation: Next, a wafer is provided, and a number of conductive bumps with uniform spacing are arranged on at least one side thereof for subsequent connection.

[0011] 5. Wafer bonding: The wafer is bonded to the carrier so that one end of each conductive part contacts the corresponding conductive bump to form a part to be sintered.

[0012] 6. Sintering process: Finally, the sintered part is sintered to form the final IGBT module.

[0013] In some embodiments of the present invention, it is first necessary to open a plurality of through holes on the carrier board to facilitate the subsequent implantation of the conductive member. In this process, the selection of the conductive member is particularly important, and its diameter should be smaller than the diameter of the corresponding through hole to ensure that a reasonable spacing space can be formed during implantation. The specific steps are as follows:

[0014] 1. Implantation of conductive parts: Select several conductive parts and implant them into the opened through holes one by one. Make sure that both ends of each conductive part protrude from the surface of the carrier board, and that a certain distance is maintained between the conductive part and the inner wall of the through hole. The purpose of this design is to create favorable conditions for subsequent operations.

[0015] 2. Filling with conductive glue: Fill the formed space with conductive glue to ensure the stability of the conductive parts and good electrical connection. The use of conductive glue not only improves the mechanical strength of the assembly, but also provides a good interface between different electrical properties, effectively reducing the loss in signal transmission.

[0016] In another embodiment, the present invention further comprises the following steps:

[0017] 1. Acquisition of position parameters: After setting the conductive bumps on the wafer, the first position parameters of these conductive bumps are acquired. This process lays the foundation for subsequent precise positioning and is a prerequisite for achieving efficient bonding.

[0018] 2. Positioning of bonding points: Using the first position parameters, the wafer bonding points on the carrier are positioned to obtain the specific position parameters of the opening. This stage ensures the optimal docking position between the conductive part and the conductive bump, providing support for subsequent precise lamination.

[0019] 3. Wafer pasting: The wafer after position correction is precisely pasted on the carrier, so that one end of each conductive element contacts the corresponding conductive bump. In this step, obtaining the second position parameter of each conductive element will help to further improve the accuracy of pasting and ensure signal transmission efficiency.

[0020] In some embodiments, the thickness of the conductive member is consistent with that of the carrier. In addition, the diameter of the conductive member is optionally less than 500 μm, which makes it easier to implant the conductive member into the carrier. The thickness of the carrier and the size of the conductive member along the thickness direction of the carrier can be set to 2 to 3 mm to ensure compatibility and adaptability in different application scenarios. The thickness of the conductive glue needs to be maintained at 40 to 60 μm, preferably 50 μm, to ensure good filling effect and electrical performance.

[0021] It is worth noting that the sintering temperature range is set between 240 and 286 ° C. Within this temperature range, a good bonding effect can be achieved to ensure a stable connection between the conductive part and the carrier. The carrier material can be selected from glass carrier, ceramic carrier or silicon carrier to meet different application requirements.

[0022] Finally, the conductive member can be a copper column or a silver column with good conductivity; the conductive glue can be a copper paste or a silver paste to further improve the conductivity of the connection. At the same time, the conductive bump can be made of at least one material of copper, silver or tin to enhance the electrical performance and durability of the entire module.

[0023] A second aspect of the present application provides an IGBT module prepared by the above-mentioned preparation method.

[0024] A third aspect of the present application provides a semiconductor device composed of the above-mentioned IGBT module.

[0025] In summary, the IGBT module and its preparation method and semiconductor device provided by the present application have several significant advantages over the prior art, including:

[0026] By optimizing the preparation process of the IGBT module, the present invention adopts a method of directly implanting a conductive part in the through hole of the carrier board, and directly contacts the conductive bump on the wafer. After sintering, the formed bond significantly reduces the intermediate links in the electrical connection compared to the traditional wire bonding technology, effectively reduces the contact resistance of the wafer bonding, and thus improves the current transmission efficiency. The reduction in contact resistance directly leads to a reduction in the heat of the IGBT module during operation, which helps to maintain the temperature stability of the chip and avoid performance degradation caused by overheating. In addition, compared with wire bonding, the connection structure formed between the directly implanted conductive part and the conductive bump is more stable and has higher vibration and impact resistance, which significantly improves the reliability and service life of the IGBT module.

[0027] The IGBT module, preparation method thereof and semiconductor device of the present application also have other advantages and features, which will be further described in the subsequent specific implementation manners. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the required drawings are briefly described below. These drawings show some embodiments of the present application and will provide a reference for those skilled in the art to derive other related drawings without creative work.

[0029] Figure 1 This is a flowchart of a method for preparing an IGBT module according to an embodiment of the present application, showing the relationship and process between the key steps.

[0030] Figure 2 This is a flow chart of an IGBT module preparation method according to another embodiment of the present application, which specifically describes the interconnection and execution sequence of each link.

[0031] The reference numerals are as follows:

[0032] 100, IGBT module; 10, carrier board; 11, through hole; 20, conductive member; 21, conductive adhesive; 30, wafer; 31, conductive bump. DETAILED DESCRIPTION

[0033] In order to more clearly illustrate the features and advantages of the present application, the specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings. It should be noted that the embodiments described herein are only exemplary contents, intended to provide guidance to those skilled in the art, rather than limiting the technical solutions.

[0034] In view of the challenges faced by the IGBT module 100 in the prior art that relies on wire bonding to achieve electrical interconnection, such as high contact resistance and significant heat generated during operation, which leads to increased chip temperature and affects module performance. The embodiment of the present application proposes an innovative method for preparing the IGBT module 100. The method significantly shortens the conductive path by opening a plurality of through holes 11 on the carrier 10, implanting a conductive member 20, and bonding a wafer 30 provided with a conductive bump 31 to the conductive member 20, thereby effectively reducing the contact resistance. This improvement can effectively suppress the heat generated by the chip during operation and improve the performance of the IGBT module 100.

[0035] Based on the above core concept, reference Figure 1 The method for preparing the IGBT module 100 of the embodiment of the present application comprises the following steps:

[0036] Step S10: Provide a carrier 10, and open a plurality of through holes 11 in the thickness direction of the carrier 10. The number and specific positions of the through holes should be designed according to the layout of the conductive bumps 31 on the subsequent wafer 30 to ensure that each conductive member 20 can contact the corresponding conductive bump 31 after implantation.

[0037] Step S20: implant the conductive elements 20 into the through holes 11 one by one, ensuring that both ends of each conductive element 20 are exposed from the carrier 10 to form an assembly. One end of each conductive element 20 is used to contact the conductive bump 31 on the wafer 30, and the other end provides electrical connection for external components.

[0038] Step S30: Provide a wafer 30 as the core component of the IGBT module 100, on which multiple IGBT units and other related circuits are integrated. On one side of the wafer 30 in the thickness direction, a plurality of conductive bumps 31 arranged at intervals are provided by electroplating, sputtering or printing. These conductive bumps 31 can be made of copper, silver, tin or alloys thereof, and are used to form an effective electrical connection with the conductive member 20 on the carrier 10.

[0039] Step S40 : attaching the wafer 30 to the carrier 10 , ensuring that one end of each conductive element 20 is in direct contact with the corresponding conductive bump 31 , thereby forming a to-be-sintered element.

[0040] Step S50 : performing a sintering process on the part to be sintered. The purpose of this process is to form a stable bond between the conductive bump 31 and the conductive part 20 in the carrier 10 , so as to finally form the IGBT module 100 .

[0041] Compared with the traditional wire bonding technology, the IGBT module 100 thus manufactured significantly reduces the electrical connection path between wafers, thereby effectively reducing the contact resistance and improving the current transmission efficiency. This improvement significantly reduces the heat generated by the IGBT module 100 during operation, maintains the stability of the chip temperature, and avoids performance degradation caused by overheating. In addition, the connection formed between the conductive member 20 and the conductive bump 31 directly implanted in the carrier 10 is more stable than the wire bonding method, and can better resist the influence of external environment such as vibration and impact, thereby improving the reliability and service life of the IGBT module 100.

[0042] In some embodiments, the technical solution includes inserting the conductive members 20 into the plurality of through holes 11 respectively, and ensuring that both ends of the conductive members 20 are exposed from the carrier 10 , and the specific steps are as follows:

[0043] Step S21 : providing a plurality of conductive members 20 , wherein the diameter of the conductive member 20 is required to be smaller than the diameter of the corresponding through hole 11 .

[0044] Step S22: implant a plurality of conductive elements 20 into corresponding through holes 11 respectively, and ensure that both ends of each conductive element 20 are exposed from the carrier 10. At this time, a space is left between the conductive element 20 and the inner wall of the through hole 11.

[0045] Step S23: filling the above-mentioned spacing space with conductive adhesive 21 to form an assembly.

[0046] The purpose of this design is to improve the connection stability between the conductive member 20 and the carrier 10, while ensuring that the thermal expansion behavior of the conductive member 20 during operation matches that of the carrier 10. Specifically, the diameter of the conductive member 20 selected in step S21 is smaller than the diameter of the corresponding through hole 11, so that after the conductive member 20 is implanted in the through hole, its two ends can be evenly exposed to the carrier 10, and a proper spacing space is formed between the conductive member 20 and the inner wall of the through hole 11. The conductive glue 21 filled in step S23 can not only provide an additional electrical connection path, but also serve as a buffer layer between the conductive member 20 and the carrier 10, effectively absorbing and relieving the stress caused by thermal expansion. This feature significantly improves the thermal expansion matching between the conductive member 20 and the carrier 10, thereby improving the electrical performance and reliability of the IGBT module 100 and extending its service life.

[0047] It should be emphasized that when implanting the conductive member 20 in step S22, a high-precision pin implanting machine, such as a high-precision PIN implanting machine with an accuracy control within ±20 microns, can be used to place the conductive member 20 one by one in the through-hole position of the carrier 10. This high-precision technology ensures the precise implantation of the conductive member 20, avoids uneven spacing areas caused by position deviation, and further affects the thickness of the conductive glue 21 and the stability of the electrical connection. Improper installation may also lead to poor bonding of the conductive bump 31, thereby affecting the overall stability of the IGBT module 100. Therefore, it is strongly recommended to use high-precision equipment for precise placement of the conductive member 20.

[0048] Conductive glue 21, as a conductive medium, can further reduce contact resistance. It is usually composed of a polymer-based material filled with nano-metal particles. Filling conductive glue 21 not only strengthens the connection stability and thermal expansion matching between the conductive member 20 and the carrier 10, but also effectively fills the tiny gap between the conductive member 20 and the inner wall of the through hole 11 to form a tight electrical connection. At the same time, conductive glue 21 can also absorb and relieve the stress generated by thermal expansion of the conductive member 20 during operation, thereby significantly extending the service life of the IGBT module.

[0049] In this embodiment, the specific steps of opening a plurality of through holes 11 along the thickness direction of the carrier board 10 are as follows:

[0050] Step S11: First, it is necessary to obtain the first position parameters of several conductive bumps 31 on the wafer 30. To this end, a laser scanner can be used for precise measurement to ensure that the acquired information is accurate. The first position parameters should include the two-dimensional coordinates (X, Y) of the conductive bump 31 on the surface of the wafer 30, as well as the height information (Z) when the height difference needs to be considered. Through this step, it can be ensured that the through holes 11 subsequently opened on the carrier 10 can be accurately aligned with the corresponding conductive bumps 31, thereby achieving reliable electrical connection.

[0051] Step S12: Next, based on the first position parameter of the conductive bump 31 obtained in step S11, combined with the bonding method and precision requirements between the wafer 30 and the carrier 10, the position of the through hole 11 to be opened on the carrier 10 is calculated. This step is very important because accurate positioning will directly affect the subsequent bonding effect and electrical performance.

[0052] Step S13: On this basis, using high-precision processing equipment (such as a laser drilling machine or a mechanical drilling machine), according to the hole position parameters obtained in step S12, a plurality of through holes 11 are opened on the carrier 10 along its thickness direction. The diameter, depth and shape of these through holes should be reasonably designed according to the size, shape and bonding requirements of the conductive member 20 to ensure perfect matching with the conductive bump 31.

[0053] Through the above steps, this embodiment not only ensures the accurate position of the through hole 11 and the docking with the conductive bump 31, but also optimizes the electrical performance of the IGBT module 100 in practical applications. The reasonable design of the through hole reduces the contact resistance in the electrical connection and provides a more stable and efficient conductive path, thereby helping to improve the performance of the overall electronic device. Throughout the process, precise instruments and scientific measurement methods lay the foundation for high-quality packaging and ensure the long-term reliability and excellent performance of the IGBT module 100.

[0054] In this embodiment, the wafer 30 is attached to the carrier 10 to ensure that one end of each conductive element 20 is in contact with its corresponding conductive bump 31. The specific steps are as follows:

[0055] Step S41: First, obtain the second position parameter of each conductive member 20. To this end, an automatic optical inspection (AOI) device can be used. This device is equipped with a high-resolution camera and combined with advanced image processing algorithms to accurately capture the image of each conductive member 20 on the carrier 10. Through image analysis technology, the AOI device can extract the precise coordinate information of each conductive member 20, which is called the second position parameter. The accuracy of this step is crucial because it is directly related to the quality and efficiency of the subsequent bonding process.

[0056] Step S42: Based on the acquired second position parameters, the wafer 30 is precisely attached to the carrier 10 to ensure that one end of each conductive part 20 is in good contact with the corresponding conductive bump 31. In this process, a die bonder is used as the main tool. Specifically, the second position parameters obtained by the AOI equipment will be imported into the die bonder, which uses this set of data and other related variables (such as the size, shape and direction of the wafer) to accurately control the movement trajectory of the robot arm. The die bonder will accurately position the wafer 30 on the carrier, ensuring that each conductive bump 31 is in close contact with its corresponding conductive part 20, laying a good foundation for the subsequent sintering process to achieve effective bonding.

[0057] Through the above steps, this embodiment optimizes the production efficiency and reliability of the entire device while ensuring accurate docking between each conductive member 20 and the conductive bump 31. Accurate position control not only reduces the contact resistance caused by poor docking, but also significantly improves the electrical performance and stability of the final IGBT module 100. In addition, the use of AOI technology for real-time monitoring and data acquisition also provides sufficient data support for subsequent quality control, ensuring the reliability and consistency of each process, thereby promoting the entire packaging process to develop in the direction of high precision and high efficiency.

[0058] In some embodiments, the size of the conductive member 20 in the thickness direction of the carrier 10 should be the same as the thickness of the carrier 10, and the height of the conductive member 20 can match the height of the through hole 11. This design allows the conductive member 20 to completely penetrate the carrier 10, thereby ensuring that it can achieve electrical connection on one side of the carrier 10, and can also be easily connected to other electronic components on the other side of the carrier 10. This design helps to achieve effective electrical connection between the conductive bumps 31 on the wafer 30 and the electronic components on the other side of the carrier 10.

[0059] In some embodiments, the diameter of the conductive member 20 is set to be less than 500 μm, for example, 450 μm, 400 μm, 350 μm, 300 μm, 250 μm, 200 μm, 150 μm, 100 μm, or any diameter selected within the range of 450 μm to 50 μm. The small size of the conductive member 20 not only helps to reduce the contact resistance, but also ensures sufficient mechanical strength to effectively support the wafer 30.

[0060] In some embodiments, in order to promote heat conduction, the thickness of the carrier 10 and / or the size of the conductive member 20 in the thickness direction of the carrier 10 is generally set between 2 and 3 mm, specifically including but not limited to any size of 2 mm, 2.1 mm, 2.2 mm, 2.3 mm, 2.4 mm, 2.5 mm, 2.6 mm, 2.7 mm, 2.8 mm, 2.9 mm and 3.0 mm. Such thickness design helps to optimize the heat conduction path and enhance the performance of the IGBT module 100.

[0061] In some embodiments, the thickness of the conductive adhesive 21 along the radial direction of the conductive member 20 is controlled to be between 40 and 60 μm, with a preferred value of 50 μm. This thickness not only ensures conductivity, but also avoids introducing excessive thermal resistance. A thinner conductive adhesive layer helps to reduce the overall size of the IGBT module 100 and improve electrical performance, but if it is too thin, it may reduce the reliability and mechanical strength of the connection. Therefore, a conductive adhesive thickness set at 40 to 60 μm is more conducive to ensuring the overall performance and reliability of the IGBT module.

[0062] In some embodiments, during the sintering process, the temperature range used is 240-286°C. This temperature ensures good bonding between the conductive bump 31 and the conductive member 20, while promoting the conductive adhesive 21 to fully penetrate into the small gap between the conductive member 20 and the surface of the carrier 10, giving full play to the stress relief performance and connection reliability of the conductive adhesive. In addition, this temperature range can also effectively prevent excessive thermal stress or damage to the carrier 10 and the wafer 30.

[0063] In some embodiments, the material of the carrier may be glass, ceramic or silicon as a substrate, wherein the glass carrier has excellent insulation performance, flatness and thermal stability, which helps to improve the power output of the IGBT module 100 .

[0064] In some embodiments, copper pillars or silver pillars may be used as the conductive member 20 because of their good conductivity and corrosion resistance. Copper pillars have a greater cost advantage, while silver pillars provide better conductivity.

[0065] In some embodiments, the conductive adhesive 21 may be made of copper paste or silver paste, which can effectively penetrate into the tiny gaps between the conductive component 20 and the carrier and wafer during the sintering process, thereby forming a stable connection and helping the conductive component 20 and the carrier 10 to achieve mutual matching of thermal expansion.

[0066] In some embodiments, the conductive bump 31 is made of at least one of copper, silver or tin. Among these materials, copper bumps are known for their high conductivity and low cost, while silver bumps provide better conductivity and corrosion resistance, and tin bumps are more suitable for low-temperature sintering.

[0067] In some embodiments, if the conductive member 20 is a copper column, the conductive adhesive 21 is a copper paste, and the conductive bump 31 is tin, the combination can effectively promote the rapid transfer of heat energy, thereby optimizing thermodynamic matching. In addition, the tin material as the conductive bump 31 has good compatibility with the copper conductive member 20, which is convenient for forming an excellent metallurgical bond during the sintering process, ensuring effective bonding between the wafer 30 and the conductive member 20, and finally realizing a high-performance and high-reliability IGBT module 100.

[0068] Another embodiment of the present application provides an IGBT module 100 , which is prepared by the above-mentioned preparation method.

[0069] Furthermore, another embodiment of the present application provides a semiconductor device, which is assembled based on the IGBT module 100 described above.

[0070] In summary, the IGBT module 100 and its preparation method provided in the embodiment of the present application, as well as the related semiconductor devices, all reflect the systematic design of the preparation process of the IGBT module 100. In this method, by directly implanting the conductive member 20 into the through hole 11 of the carrier 10 and directly contacting the conductive bump 31 on the wafer 30, after sintering, the conductive bump 31 forms a firm bond with one end of the conductive member 20. Compared with the traditional wire bonding technology, this process significantly simplifies the intermediate links in the electrical connection, effectively reduces the contact resistance of the wafer 30 bonding, and thus significantly improves the current transmission efficiency. Due to the reduction in contact resistance, the heat generated by the IGBT module 100 during operation is reduced, which helps to maintain the stability of the chip temperature, thereby avoiding performance degradation caused by overheating. In addition, compared with the wire bonding technology, the connection between the directly implanted conductive member 20 and the conductive bump 31 is more stable, and can effectively resist the influence of external environmental factors such as vibration and impact, which undoubtedly improves the reliability and service life of the IGBT module 100.

[0071] Although the above embodiments have been demonstrated and described in detail, it should be understood that these embodiments are only exemplary and do not necessarily limit the scope of protection of the present application. Those skilled in the art can change, modify, replace and modify the above embodiments within the scope of the present application to meet different application requirements.

Claims

1. A method for preparing an IGBT module, characterized in that: The following steps are involved: Providing a carrier plate, and opening a plurality of through holes along the thickness direction of the carrier plate; implanting conductive elements into the plurality of through holes respectively, and making both ends of each conductive element exposed from the carrier board, thereby forming an assembly; Providing a wafer, and disposing a plurality of conductive bumps arranged at intervals on at least one side of the wafer in a thickness direction; Laying the wafer on the carrier plate so that one end of each of the conductive members contacts the corresponding conductive bump, thereby forming a member to be sintered; The part to be sintered is sintered to obtain an IGBT module.

2. The IGBT module preparation method according to claim 1, characterized in that: The step of implanting the conductive member comprises: Providing a plurality of conductive members, wherein the diameter of the conductive members is smaller than the diameter of the corresponding through holes; Implanting the conductive members into corresponding through holes respectively, and ensuring that both ends of each conductive member are exposed from the carrier board, and forming a spacing space between the conductive members and the inner wall of the through hole; The space is filled with conductive glue to obtain an assembly.

3. The IGBT module preparation method according to claim 1, characterized in that: The step of opening a plurality of through holes along the thickness direction of the carrier plate comprises: Acquiring first position parameters of a plurality of conductive bumps on a wafer; Based on the first position parameters, positioning the wafer bonding points on the carrier to obtain the hole position parameters; Based on the hole opening position parameters, a plurality of through holes are opened in the thickness direction of the carrier board.

4. The IGBT module preparation method according to claim 1, characterized in that: The steps of wafer bonding include: Acquire a second position parameter of each of the conductive members; Based on the second position parameter, the wafer is attached to the carrier so that one end of each of the conductive elements contacts its corresponding conductive bump.

5. The IGBT module preparation method according to claim 2, characterized in that: The dimension of the conductive member in the thickness direction of the carrier plate is the same as the thickness of the carrier plate; Optionally, the diameter of the conductive member is less than 500 μm; Optionally, the thickness of the carrier plate and / or the dimension of the conductive member in the thickness direction of the carrier plate is 2 to 3 mm; Optionally, the thickness of the conductive adhesive in the radial direction of the conductive member is 40-60 μm, preferably 50 μm.

6. The method for preparing an IGBT module according to claim 1, characterized in that: The temperature range of the sintering treatment is 240-286°C.

7. The method for preparing an IGBT module according to claim 1, characterized in that: The carrier plate is a glass carrier plate, a ceramic carrier plate or a silicon carrier plate.

8. The method for preparing an IGBT module according to claim 1, characterized in that: The conductive member is a copper column or a silver column; Optionally, the conductive paste includes copper paste or silver paste; Optionally, the material of the conductive bump includes at least one of copper, silver or tin.

9. An IGBT module, characterized in that: The preparation method is described in any one of claims 1 to 8.

10. A semiconductor device, characterized in that: The IGBT module is assembled using the IGBT module as claimed in claim 9.

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