A method for anti-shake die bonding

Abstract

This invention relates to the field of die bonding technology, specifically disclosing a shake-resistant die bonding method, comprising: lifting a wafer on a thin film upwards, causing the wafer to detach from the thin film; fixing the lifted wafer to a substrate; and lateralizing the thin film to perform a lifting operation on the next wafer; wherein, during the lateralization of the thin film, the thin film is continuously adsorbed downwards to limit the film from shaking. The shake-resistant die bonding method provided by this invention effectively solves the problem that the shaking of the thin film caused by the oscillation of the die bonding arm in existing die bonding equipment is detrimental to the positioning of the wafer on the thin film, ultimately leading to poor die bonding.

Description

Technical Field

[0001] This invention relates to the field of die bonding technology, and more particularly to a method for anti-shake die bonding. Background Technology

[0002] When the wafer arrives, it is fixed on a thin film, which is then stretched onto the crystal ring.

[0003] The die bonding equipment includes a die ring fixing mechanism for placing the die ring, a push pin mechanism located below the die ring and lifting the wafer upward to detach it from the thin film, and a die bonding swing arm for moving the lifted wafer onto the substrate.

[0004] Existing ejector mechanisms include:

[0005] A top crystal adsorption hole is provided on the top of the top crystal cap;

[0006] The ejector body is located inside the ejector cap and is slidably disposed up and down relative to the ejector cap.

[0007] The steps for performing a die bonding operation are as follows:

[0008] ① The top crystal adsorption hole holds the film downwards, preventing the film from moving upwards with the ejector pin during the subsequent crystallization process;

[0009] ②The ejector pin moves upward, pierces the adsorbed film, and then lifts the wafer located directly above the ejector pin until it detaches from the film.

[0010] ③ The die-bonding arm removes the lifted wafer and moves it onto the substrate;

[0011] ④ After the ejector pin body retracts downward, the vacuum in the top crystal adsorption hole is broken to release the film, and the crystal ring fixing mechanism moves the crystal ring so that the next wafer moves to the top of the ejector pin body.

[0012] ⑤ The ejector pin body lifts a wafer upwards again. Simultaneously, after the die bonding arm finishes bonding, it returns to the wafer pick-up position and picks up the wafer that was lifted.

[0013] During the aforementioned process, the die-bonding efficiency is very high. Therefore, the die-bonding arm oscillates almost continuously, essentially fanning the thin film, causing it to vibrate up and down. This vibration affects the camera's visual positioning accuracy of the wafer. Consequently, when the wafer ring fixing mechanism moves the wafer ring, it cannot ensure that the wafer's geometric center is directly above the ejector pin. When the ejector pin subsequently lifts the wafer upwards, it cannot directly reach the wafer's geometric center, easily resulting in misalignment. This misalignment makes the wafer more susceptible to damage during die-bonding, ultimately leading to poor die bonding.

[0014] Therefore, existing die bonding methods need to be improved to solve the problem that the shaking of the thin film caused by the swing of the die bonding arm is not conducive to the positioning of the wafer on the thin film, and ultimately leads to poor die bonding.

[0015] The information disclosed in this background section is included only to enhance the understanding of the context of this disclosure, and therefore may contain information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0016] One objective of this invention is to provide a shake-resistant die bonding method that can effectively solve the problem that the shaking of the thin film caused by the swing of the die bonding arm in existing die bonding equipment is not conducive to the positioning of the wafer on the thin film, and ultimately leads to poor die bonding.

[0017] To achieve the above objectives, the present invention provides a method for anti-shake die bonding, comprising:

[0018] The wafer on the thin film is pushed upwards, causing the wafer to detach from the thin film;

[0019] The lifted wafer is then fixed to the substrate;

[0020] The film is lateralized to allow for lifting operations on the next wafer; wherein, during lateralization, the film is continuously adsorbed downwards to limit film vibration.

[0021] Optionally, lifting the wafer upwards on the thin film to detach the wafer from the thin film includes:

[0022] The film is fixed by downward adsorption using a first suction force;

[0023] After piercing the film upwards, the corresponding wafer is lifted upwards, causing the wafer to detach from the film.

[0024] Optionally, the step of continuously adsorbing the film downwards during the transverse movement of the film to limit film vibration specifically involves:

[0025] When the film is moved laterally, the film is continuously adsorbed downwards by a second suction force to limit the film from shaking.

[0026] Wherein, the first suction force is greater than the second suction force.

[0027] Optionally, the anti-shake die bonding method is performed by a die bonding device, the die bonding device comprising:

[0028] The inner cap of the ejector pin has a needle hole and several top crystal adsorption holes on its top surface;

[0029] The outer sleeve of the ejector pin is sleeved on the outside of the inner cap of the ejector pin, and together with the inner cap of the ejector pin, forms an anti-shake adsorption cavity with the opening facing upward.

[0030] The ejector body is located in the inner cap of the ejector and extends upward through the needle hole after being driven.

[0031] Optionally, the first suction force is N1, the second suction force is N2, the sum of the suction forces of each of the top crystal adsorption holes is N3, and the suction force at the upper opening of the anti-shake adsorption cavity is N4, wherein N2=N4.

[0032] Optional, N1=N3.

[0033] Optionally, the lateral movement of the thin film to perform a lifting operation on the next wafer includes:

[0034] First, switch the anti-shake adsorption chamber to vacuum suction mode, and then switch the top crystal adsorption hole to vacuum breaking mode.

[0035] Optional, N1 = N3 + N4.

[0036] Optionally, the lateral movement of the thin film to perform a lifting operation on the next wafer includes:

[0037] Switch the top crystal adsorption hole to the vacuum breaking state and maintain the vacuum suction state of the anti-vibration adsorption chamber.

[0038] Optionally, the upper opening of the anti-shake adsorption cavity is annular, and the pinhole and each of the top crystal adsorption holes are located within the annular structure.

[0039] The beneficial effects of the present invention are as follows: It provides a method for anti-shake die bonding in which the thin film is continuously adsorbed downward when the thin film is moved laterally, so as to limit the shaking of the thin film, thereby effectively solving the problem that the shaking of the thin film caused by the swing of the die bonding arm of the existing die bonding equipment is not conducive to the positioning of the wafer on the thin film, and ultimately leads to poor die bonding. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 A schematic diagram of the die bonding device provided in the embodiment;

[0042] Figure 2A schematic diagram of the ejector pin mechanism provided in the embodiment;

[0043] Figure 3 A cross-sectional schematic diagram of the dual-division ejector pin unit provided in the embodiment;

[0044] Figure 4 A cross-sectional schematic diagram of the ejector pin mechanism provided in the embodiment;

[0045] Figure 5 The flowchart illustrates the anti-shake die bonding method provided in this embodiment.

[0046] In the picture:

[0047] 1. Crystal ring fixing mechanism;

[0048] 2. Ejector mechanism;

[0049] 201. Dual-zone suction pin unit; 2011. Inner cap of the ejector pin; 2011a. Needle hole; 2011b. Top crystal adsorption hole; 2012. Outer sleeve of the ejector pin; 2012a. Anti-shake adsorption chamber; 2012b. Annular structure; 2013. Ejector pin body; 2014. Ejector pin base; 2014a. Lower section of the ejector pin adsorption channel; 2015. Cap base; 2015a. Upper section of the ejector pin adsorption channel; 2016. Ejector pin return spring; 2017. Anti-shake adsorption air pipe connector; 2018. Top crystal adsorption air pipe connector;

[0050] 202. Vertical direct drive mechanism; 2021. Cam; 2022. Rotary drive mechanism;

[0051] 3. Die-bonding swing arm. Detailed Implementation

[0052] In this invention, the term "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of the invention. The term "embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment, nor does it specifically limit its independence or connection with other embodiments. In principle, in this invention, as long as there is no technical contradiction or conflict, the technical features mentioned in each embodiment can be combined in any way to form a corresponding implementable technical solution.

[0053] Unless otherwise defined, the technical terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains; the use of related terms herein is merely for the purpose of describing particular embodiments and is not intended to limit the invention.

[0054] In the description of this invention, the term "and / or" is used to describe the logical relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A exists, B exists, and A and B exist simultaneously. Additionally, the character " / " generally indicates that the preceding and following objects have an "or" logical relationship.

[0055] In this invention, terms such as “first” and “second” are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any actual quantity, hierarchy, or order between these entities or operations.

[0056] Without further limitations, the use of terms such as “comprising,” “including,” “having,” or other similar expressions in this invention is intended to cover non-exclusive inclusion, which does not exclude the presence of additional elements in a process, method, or product that includes the stated elements, such that a process, method, or product that includes a list of elements may include not only those defined elements but also other elements not expressly listed, or elements inherent to such a process, method, or product.

[0057] Similar to the understanding in the Examination Guidelines, in this invention, expressions such as "greater than," "less than," and "exceeding" are understood to exclude the stated number; expressions such as "above," "below," and "within" are understood to include the stated number. Furthermore, in the description of the embodiments of this invention, "multiple" means two or more (including two), and similar expressions related to "multiple" are also understood in this way, such as "multiple groups" and "multiple times," unless otherwise explicitly specified.

[0058] In the description of the embodiments of the present invention, the spatial related expressions used, such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "vertical," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the specific embodiments or drawings. They are only for the purpose of describing the specific embodiments of the present invention or for the reader's understanding, and do not indicate or imply that the device or component referred to must have a specific position, a specific orientation, or be constructed or operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention.

[0059] Unless otherwise explicitly stated or limited, the terms "installation," "connection," "linking," "fixing," and "setting," as used in the description of the embodiments of this invention, should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral arrangement; it can be a mechanical connection, an electrical connection, or a communication connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this invention according to the specific circumstances.

[0060] Example 1

[0061] This embodiment provides a dual-division ejector pin unit 201, ejector pin mechanism 2, and die bonding equipment, which is applicable to wafer bonding operations in semiconductor manufacturing. It can effectively solve the problem that the existing die bonding equipment's die bonding arm 3 swings and causes thin film vibration, which is not conducive to positioning the wafer on the thin film and ultimately leads to poor die bonding.

[0062] See Figure 1 In this embodiment, the die bonding equipment includes a die ring fixing mechanism 1 for placing the die ring, a push pin mechanism 2 located below the die ring and lifting the wafer upward to detach it from the thin film, and a die bonding swing arm 3 for moving the lifted wafer onto the substrate.

[0063] See Figure 2 The ejector mechanism 2 includes a dual-division ejector unit 201 for adsorbing the thin film, and a vertical direct drive mechanism 202 that drives the dual-division ejector unit 201 to lift the wafer on the thin film upward.

[0064] See Figure 3 The dual-zone ejector pin unit 201 includes an inner ejector pin cap 2011, an outer ejector pin sleeve 2012, and an ejector pin body 2013.

[0065] The top surface of the inner cap 2011 of the ejector pin is provided with a needle hole 2011a and a plurality of crystal adsorption holes 2011b; the outer sleeve 2012 of the ejector pin is sleeved on the outside of the inner cap 2011 of the ejector pin, and together with the inner cap 2011 of the ejector pin, forms an anti-shake adsorption cavity 2012a with the opening facing upward; the ejector pin body 2013 is located in the inner cap 2011 of the ejector pin, and after being driven by the vertical direct drive mechanism 202, it extends upward through the needle hole 2011a so as to pierce the film and lift the corresponding wafer upward.

[0066] The dual-division ejector pin unit 201 provided in this embodiment has the following die bonding process when a die bonding operation is required:

[0067] (1) The upper opening of the anti-shake adsorption cavity 2012a and the top crystal adsorption hole 2011b together hold the film downward to prevent the film from moving upward with the ejector pin during the subsequent crystal process.

[0068] (2) After being driven, the ejector body 2013 moves upward, pierces the adsorbed film, and then lifts the wafer located directly above the ejector body 2013 upward until it is detached from the film.

[0069] (3) The die-bonding arm 3 removes the lifted wafer and moves it onto the substrate;

[0070] (4) After the ejector body 2013 retracts downward, the top crystal adsorption hole 2011b breaks the vacuum to release the film, but the anti-vibration adsorption cavity 2012a remains in a vacuum suction state to hold the film.

[0071] (5) The crystal ring fixing mechanism 1 moves the crystal ring so that the next wafer moves to the top of the ejector pin body 2013;

[0072] (6) The ejector body 2013 lifts a wafer upward again. Simultaneously, after the die bonding arm 3 finishes bonding, it returns to the wafer pick-up position and picks up the wafer that was lifted.

[0073] During the aforementioned process, as the crystal ring moves the thin film laterally, the anti-shake adsorption cavity 2012a continuously adsorbs the thin film, suppressing its vertical shaking and reducing the difficulty for the camera to visually position the chip, thereby improving the visual positioning accuracy. This allows the crystal ring fixing mechanism 1 to laterally move the geometric center of the chip directly above the ejector pin body 2013. Subsequently, when the ejector pin body 2013 lifts the chip upwards, it can directly reach the geometric center of the chip, making it less prone to misalignment. This prevents damage to the chip due to chip misalignment during chip removal by the die-bonding arm 3, ultimately reducing die-bonding defects.

[0074] Therefore, the dual-division ejector pin unit 201 provided by the present invention can effectively solve the problem that the thin film shakes when the die bonding arm 3 of the existing die bonding equipment swings, which is not conducive to positioning the wafer on the thin film and ultimately leads to poor die bonding.

[0075] In this embodiment, the upper opening of the anti-shake adsorption cavity 2012a is an annular structure 2012b, and the pinhole 2011a and each of the top crystal adsorption holes 2011b are all located within the annular structure 2012b. Designing the upper opening of the anti-shake adsorption cavity 2012a as an annular structure 2012b surrounding the pinhole 2011a and each of the top crystal adsorption holes 2011b is beneficial because, given the limited top surface area of ​​the dual-division adsorption pin unit 201, the anti-shake adsorption cavity 2012a can adsorb the film over a larger area, further improving the anti-shake effect.

[0076] Optionally, the dual-zone ejector pin unit 201 further includes an ejector pin base 2014, a cap base 2015, and an ejector pin return spring 2016.

[0077] The ejector pin body 2013 is slidably mounted on the ejector pin base 2014; the cap base 2015 is mounted on the ejector pin base 2014, and both the ejector pin outer sleeve 2012 and the ejector pin inner cap 2011 are mounted on the upper end of the cap base 2015, which blocks the lower opening of the anti-shake adsorption cavity 2012a. The ejector pin return spring 2016 is sleeved on the ejector pin body 2013 and located below the ejector pin base 2014, used to drive the ejector pin body 2013 to slide downward relative to the ejector pin inner cap 2011 until it is flush with or lower than the needle hole 2011a.

[0078] Optionally, the ejector pin base 2014 and the ejector pin body 2013 are provided with an upper section 2015a of the ejector pin adsorption channel, which communicates with each of the top crystal adsorption holes 2011b, between the ejector pin base 2014 and the cap base 2015.

[0079] The outer side of the ejector base 2014 is provided with a lower section 2014a of the ejector adsorption channel that is connected to the upper section 2015a of the ejector adsorption channel, and a top crystal adsorption gas pipe connector 2018 that is connected to the lower section 2014a of the ejector adsorption channel.

[0080] The side wall of the outer sleeve of the ejector pin 2012 is connected to an anti-vibration adsorption tube connector 2017 that communicates with the anti-vibration adsorption cavity 2012a.

[0081] Furthermore, the ejector mechanism 2 also includes an ejector crystal adsorption vacuum pump and an anti-vibration adsorption vacuum pump.

[0082] The suction port of the top crystal adsorption vacuum pump is connected to each top crystal adsorption hole 2011b of the inner cap 2011 of the top pin through the top crystal adsorption air pipe connector 2018; the suction port of the anti-vibration adsorption vacuum pump is connected to the anti-vibration adsorption chamber 2012a through the anti-vibration adsorption air pipe connector 2017.

[0083] In this embodiment, the suction force of the upper opening of the anti-shake adsorption cavity 2012a is less than the suction force of each of the top crystal adsorption holes 2011b.

[0084] The main function of the top crystal suction hole 2011b is to fix the thin film in place and ensure that the thin film does not rise with the wafer when the ejector pin lifts the wafer. Therefore, the top crystal suction hole 2011b needs a strong suction force to firmly hold the thin film.

[0085] The anti-shake adsorption cavity 2012a is mainly used for adsorbing thin films, but it needs to ensure that the film can be lateralized while being adsorbed, so that the next wafer can be lateralized directly above the ejector body 2013. If the suction force of the anti-shake adsorption cavity 2012a is too large, the film may be pulled by the strong suction force of the anti-shake adsorption cavity 2012a during the lateral movement of the crystal ring driven by the crystal ring fixing mechanism 1, causing the wafer to shift or tilt, making it impossible for the wafer to be accurately ejected, thus affecting the quality of die bonding.

[0086] In other words, the primary function of the anti-vibration adsorption cavity 2012a is to suppress film vibration, rather than to fix the film. Therefore, it only requires sufficient suction to stabilize the film, rather than excessive suction. Appropriate suction can balance the various forces during the die bonding process, ensuring that the wafer can be smoothly lifted and moved.

[0087] Therefore, in order to avoid excessive stretching of the film by the top crystal adsorption hole 2011b during the transverse movement of the crystal ring, the top crystal adsorption hole 2011b needs to be devastated after the ejector body 2013 lifts the wafer so that the top crystal adsorption hole 2011b can release the film.

[0088] Therefore, the suction force of the upper opening of the anti-shake adsorption cavity 2012a is less than the suction force of each top crystal adsorption hole 2011b, which can ensure the smooth progress of the crystal bonding process, improve the crystal bonding accuracy, and protect the thin film and wafer from damage.

[0089] See Figure 4 Optionally, the vertical direct drive mechanism 202 includes a cam 2021 located below the ejector pin body 2013 and a rotary drive mechanism 2022 that drives the cam 2021 to rotate. When the rotary drive mechanism 2022 drives the cam 2021 to rotate, if the convex portion of the cam 2021 abuts against the ejector pin body 2013, the ejector pin body 2013 can be lifted upward to push the wafer upward; if the equal-diameter portion of the cam 2021 abuts against the ejector pin body 2013, the ejector pin return spring 2016 can drive the ejector pin body 2013 to slide downward to be flush with or below the needle hole 2011a, so as to avoid scratching the film during the transverse movement of the film.

[0090] In summary, the die bonding equipment provided in this embodiment has the following advantages:

[0091] ① Improved die bonding accuracy: The dual-division captive pin unit 201 effectively suppresses the jitter of the thin film during the die bonding process, reduces the difficulty of the camera to visually position the wafer, and improves the visual positioning accuracy, thereby improving the die bonding accuracy.

[0092] ② Reduced die bonding failures: The ejector pin body 2013 can directly eject the wafer to the geometric center, avoiding damage to the wafer caused by ejector misalignment and reducing the occurrence of die bonding failures.

[0093] ③ Avoid tearing the film: By distributing the suction force reasonably, avoid excessive suction force during the lateral movement of the film, which could damage the film.

[0094] ④ Increase the anti-shake adsorption area: The upper opening of the anti-shake adsorption cavity 2012a is designed as an annular structure 2012b that surrounds the pinhole 2011a and each of the top crystal adsorption holes 2011b, so that the anti-shake adsorption cavity 2012a can adsorb the film in a larger area, further improving the anti-shake effect.

[0095] Example 2

[0096] This embodiment provides a shake-resistant die bonding method, which is performed by the die bonding equipment provided in Embodiment 1 and has the same function and beneficial effects.

[0097] In this embodiment, the anti-shake die bonding method includes:

[0098] S10: Push the wafer on the thin film upwards, so that the wafer is detached from the thin film;

[0099] S20: Fix the lifted wafer onto the substrate;

[0100] S30: The thin film is moved laterally to lift the next wafer; wherein, while the thin film is moved laterally, the thin film is continuously adsorbed downward to limit the film from shaking.

[0101] The anti-shake die bonding method provided in this embodiment continuously adsorbs the film downwards when the film is moved laterally, so as to limit the film from shaking. This effectively solves the problem that the film shakes when the die bonding arm 3 of the existing die bonding equipment swings, which is not conducive to positioning the wafer on the film and ultimately leads to poor die bonding.

[0102] In this embodiment, step S10 includes:

[0103] S101: The film is fixed by downward adsorption with a first suction force;

[0104] S102: After piercing the film upwards, the corresponding wafer is lifted upwards, causing the wafer to detach from the film.

[0105] Accordingly, step S30 specifically includes:

[0106] When the film is moved laterally, the film is continuously adsorbed downwards by a second suction force to limit the film from shaking.

[0107] Wherein, the first suction force is greater than the second suction force.

[0108] In this embodiment, the first suction force is N1, the second suction force is N2, the sum of the suction forces of each of the top crystal adsorption holes 2011b is N3, and the suction force at the upper opening of the anti-shake adsorption cavity 2012a is N4, wherein N2=N4.

[0109] As an optional implementation, N1 = N3.

[0110] When N1=N3, it means that during the entire die bonding process, the top crystal adsorption hole 2011b and the anti-shake adsorption cavity 2012a alternately enter the vacuum suction state. Specifically, when it is necessary to pierce the film and lift the wafer upward to detach it from the film, the top crystal adsorption hole 2011b needs to be switched to the vacuum suction state to fix the film, and the anti-shake adsorption cavity 2012a needs to be switched to the vacuum breaking state; when it is necessary to move the film horizontally, the anti-shake adsorption cavity 2012a needs to be switched to the vacuum suction state to achieve anti-shake for the horizontal movement of the film, and then the top crystal adsorption hole 2011b needs to be switched to the vacuum breaking state to avoid tearing the film.

[0111] It should be noted that if "the top crystal adsorption hole 2011b is switched to the vacuum breaking state first, and then the anti-shake adsorption chamber 2012a is switched to the vacuum suction state", there is a time difference between "after the top crystal adsorption hole 2011b is switched to the vacuum breaking state and before the anti-shake adsorption chamber 2012a is switched to the vacuum suction state" during which the film is not held in place by suction. The film will shake violently during this period due to the large change in suction. In this embodiment, "the anti-shake adsorption chamber 2012a is switched to the vacuum suction state first to achieve anti-shake for the film's lateral movement, and then the top crystal adsorption hole 2011b is switched to the vacuum breaking state to avoid tearing the film", which can prevent the film from shaking violently due to the large change in suction.

[0112] As another alternative implementation, N1 = N3 + N4.

[0113] When N1 = N3 + N4, it means that the anti-vibration adsorption cavity 2012a is always in a vacuum suction state throughout the entire die bonding process. Only the top crystal adsorption hole 2011b changes between vacuum suction and vacuum breaking states. Specifically, when it is necessary to pierce the film and lift the wafer upward to detach it from the film, the top crystal adsorption hole 2011b needs to be switched to the vacuum suction state to firmly adsorb and fix the film downward; when it is necessary to move the film horizontally, the top crystal adsorption hole 2011b needs to be switched to the vacuum breaking state to prevent the initial suction force from being too large and tearing the film during horizontal movement.

[0114] It should be noted that the anti-shake adsorption chamber 2012a and the top crystal adsorption hole 2011b simultaneously adsorb and fix the film downwards, which can reduce the suction force requirement of each of the top crystal adsorption holes 2011b, thereby reducing the parameter requirements of the top crystal adsorption vacuum pump and thus reducing the equipment cost.

[0115] Furthermore, frequent switching between vacuum suction and vacuum breaking states will reduce the service life of related valves. Keeping the anti-vibration adsorption chamber 2012a in a vacuum suction state can effectively reduce the number of valve operations and thus extend the service life of the equipment.

[0116] Therefore, keeping the anti-vibration adsorption chamber 2012a in a vacuum state throughout the entire die bonding process not only reduces equipment costs but also extends the equipment's service life.

[0117] Based on Example 1, features not explained in this example will be explained using the methods described in Example 1, and will not be repeated here.

[0118] Finally, it should be noted that although the above embodiments have been described in the text and drawings of this application, this should not limit the scope of patent protection of this application. Any technical solutions that are based on the essential concept of this application and utilize the content described in the text and drawings of this application, resulting in equivalent structural or procedural substitutions or modifications, as well as the direct or indirect application of the technical solutions of the above embodiments to other related technical fields, are all included within the scope of patent protection of this application.

Claims

1. A method for anti-shake die bonding, characterized in that, include: The wafer on the thin film is lifted upwards, causing the wafer to detach from the thin film; The lifted wafer is then fixed to the substrate; The film is lateralized to allow for lifting operations on the next wafer; wherein, during lateralization, the film is continuously adsorbed downwards to limit film vibration; The step of lifting the wafer on the thin film upwards, causing the wafer to detach from the thin film, includes: The film is fixed by downward adsorption using a first suction force; After piercing the film upwards, the corresponding wafer is lifted upwards, causing the wafer to detach from the film; The step of continuously adsorbing the film downwards during the lateral movement of the film to limit film vibration specifically involves: When the film is moved laterally, the film is continuously adsorbed downwards by a second suction force to limit the film from shaking. Wherein, the first suction force is greater than the second suction force; The anti-shake die bonding method is performed by a die bonding device, the die bonding device comprising: The inner cap of the ejector pin has a needle hole and several top crystal adsorption holes on its top surface; The outer sleeve of the ejector pin is sleeved on the outside of the inner cap of the ejector pin, and together with the inner cap of the ejector pin, forms an anti-shake adsorption cavity with the opening facing upward. The ejector body is located in the inner cap of the ejector and extends upward through the needle hole after being driven. The crystal bonding equipment also includes a top crystal adsorption vacuum pump and a vibration-proof adsorption vacuum pump; The suction port of the top crystal adsorption vacuum pump is connected to each top crystal adsorption hole of the inner cap of the top pin through a top crystal adsorption gas pipe connector; the suction port of the anti-vibration adsorption vacuum pump is connected to the anti-vibration adsorption chamber through an anti-vibration adsorption gas pipe connector.

2. The anti-shake die bonding method according to claim 1, characterized in that, The first suction force is N1, the second suction force is N2, the sum of the suction forces of each of the top crystal adsorption holes is N3, and the suction force at the upper opening of the anti-shake adsorption cavity is N4, wherein N2=N4.

3. The anti-shake die bonding method according to claim 2, characterized in that, N1=N3.

4. The anti-shake die bonding method according to claim 3, characterized in that, The lateral movement of the thin film to perform a lifting operation on the next wafer includes: First, switch the anti-shake adsorption chamber to vacuum suction mode, and then switch the top crystal adsorption hole to vacuum breaking mode.

5. The anti-shake die bonding method according to claim 2, characterized in that, N1 = N3 + N4.

6. The anti-shake die bonding method according to claim 5, characterized in that, The lateral movement of the thin film to perform a lifting operation on the next wafer includes: Switch the top crystal adsorption hole to the vacuum breaking state and maintain the vacuum suction state of the anti-vibration adsorption chamber.

7. The anti-shake die bonding method according to claim 1, characterized in that, The upper opening of the anti-shake adsorption cavity is annular, and the pinhole and each of the top crystal adsorption holes are located within the annular structure.

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