Packaging adhesive layer, composite film and forming method thereof, and packaging method of semiconductor device

Abstract

The embodiment of the invention provides a packaging adhesive layer, a composite film, a forming method of the composite film and a packaging method of a semiconductor device. The packaging adhesive layer comprises a fitting area and a fitting position recognition area. The bonding position recognition area is adjacent to the bonding area and protrudes relative to the edge of the bonding area. In the process of attaching the packaging adhesive layer, the attaching precision and the yield of the packaging adhesive layer are improved by utilizing the positioning effect of the attaching position recognizing area of the packaging adhesive layer.

Description

Technical Field

[0001] The present application relates to the field of packaging adhesive technology, and in particular to a packaging adhesive layer, a composite film and a method for forming the same, and a packaging method for a semiconductor device. Background Art

[0002] In order to ensure that semiconductor devices such as chips have a certain strength, it is necessary to adhere a layer of encapsulation adhesive layer to the back of the chip including the circuit as a protective film for the chip. The process of adhering the encapsulation adhesive layer to the back of the chip is to adhere the encapsulation adhesive layer to the wafer including the chip, solidify the encapsulation adhesive layer, and finally cut the wafer and the encapsulation adhesive layer to obtain the chip encapsulated by the encapsulation adhesive layer. Since the bonding accuracy of the encapsulation adhesive layer to the wafer will affect the effect of encapsulating the chip, it is necessary to improve the bonding accuracy of the encapsulation adhesive layer to the wafer. Summary of the invention

[0003] The embodiments of the present application provide a packaging adhesive layer, a composite film and a method for forming the same, and a packaging method for a semiconductor device, which improve the lamination accuracy of the packaging adhesive layer to at least partially solve the above-mentioned technical problems.

[0004] In order to achieve the above object, according to a first aspect of an embodiment of the present application, a packaging adhesive layer is provided. The packaging adhesive layer includes a bonding area and a bonding recognition area. The bonding recognition area is adjacent to the bonding area and protrudes relative to the edge of the bonding area.

[0005] According to a second aspect of the present application, an embodiment of the present application provides a composite film, the composite film comprising the encapsulation adhesive layer and a scribe layer. The encapsulation adhesive layer is stacked on the scribe layer. The orthographic projection of the encapsulation adhesive layer on the scribe layer is located within the scribe layer.

[0006] According to the third aspect of the present application, the embodiment of the present application further provides a method for forming a composite film, comprising: forming the above-mentioned encapsulation adhesive layer; forming a dicing layer; The packaging adhesive layer is laminated to the dicing layer.

[0007] According to a fourth aspect of the present application, an embodiment of the present application further provides a method for packaging a semiconductor device, comprising: Providing the composite film and wafers to be cut; Bonding the wafer to be cut to the bonding area according to the bonding recognition area; The wafer to be cut and the packaging glue layer are cut to obtain a plurality of packaged semiconductor devices, wherein the packaged semiconductor devices include semiconductor devices and a packaging layer located on the semiconductor devices, the semiconductor devices are obtained by cutting the wafer to be cut, and the packaging layer is obtained by cutting the packaging glue layer.

[0008] In the encapsulation adhesive layer, composite film and method for forming the same, and semiconductor device encapsulation method of some embodiments of the present application, during the process of bonding the encapsulation adhesive layer, the positioning function of the bonding recognition area of ​​the encapsulation adhesive layer itself is utilized to improve the bonding accuracy and yield of the encapsulation adhesive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 A schematic diagram of the planar structure of the encapsulation adhesive layer provided in an embodiment of the present application; Figure 2 A schematic diagram of the planar structure of the composite membrane provided in an embodiment of the present application; Figure 3 The embodiment of the present application provides Figure 2 A schematic diagram of a cross-sectional structure taken along the A-A' tangent line shown; Figure 4 The embodiment of the present application provides Figure 2 Another schematic diagram of a cross-sectional structure taken along the A-A' tangent line is shown; Figure 5 A schematic diagram of a process for forming a composite film according to an embodiment of the present application; Figures 6 to 17 A schematic diagram of the formation process of the composite film provided in the embodiment of the present application; Fig.18 A schematic diagram of a process flow of a semiconductor device packaging method provided in an embodiment of the present application; Figure 19 to Figure 20 A schematic diagram of a packaging process of a semiconductor device provided in an embodiment of the present application; Figure 21 to Figure 26 The circuit diagram is an effect diagram of using infrared light to detect the internal structure of the wafer to be cut in some embodiments and comparative examples.

[0010] The reference numerals are as follows: 100. Composite membrane; 110, initial encapsulation adhesive layer; 11, encapsulation adhesive layer; 111. Fitting area; 112. Fitting recognition area; 112A, first arc-shaped edge; 112B, second arc-shaped edge; 21. Slicing layer; 22. Cutting tape; 23. Antistatic adhesive layer; 30. Initial double-sided adhesive layer; 31. Double-sided adhesive layer; 41. release layer; 42. first release layer; 43. second release layer; G. Gap; 51. Wafer to be cut; 61. Iron frame; 71. infrared light detection component; 72. infrared light transmitter; 73. infrared light receiver; 81. Infrared light source; 82. Infrared imager; L1, L2, infrared light. DETAILED DESCRIPTION

[0011] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0012] See also Figure 1 As shown, the embodiment of the present application provides a packaging adhesive layer 11. The packaging adhesive layer 11 is used to package semiconductor devices such as wafers and chips, thereby protecting the semiconductor devices.

[0013] The encapsulation adhesive layer 11 includes a bonding area 111 and a bonding recognition area 112. The bonding recognition area 112 is adjacent to the bonding area 111 and protrudes relative to the edge of the bonding area 111. In this way, in the process of bonding the encapsulation adhesive layer 11, the positioning function of the bonding recognition area 112 of the encapsulation adhesive layer 11 itself is utilized to improve the bonding accuracy and yield of the encapsulation adhesive layer 11.

[0014] It should be noted that, compared with adding other structures to achieve the lamination and positioning of the encapsulation adhesive layer, the embodiment of the present application sets a lamination recognition area 112 on the encapsulation adhesive layer 11, which not only simplifies the lamination process of the encapsulation adhesive layer 11, but also improves the lamination yield of the encapsulation adhesive layer 11.

[0015] In some embodiments, see Figure 1 As shown, the two bonding recognition areas 112 are located on opposite radial sides of the bonding area 111. The two bonding recognition areas 112 located on opposite radial sides are used to respectively realize the positioning of the bonding start point and the bonding end point of the encapsulation adhesive layer 11 itself, thereby realizing the bonding positioning of the encapsulation adhesive layer 11 and improving the bonding accuracy and yield.

[0016] The principle of the two fitting recognition areas 112 to achieve fitting positioning is that before the fitting area 111 of the encapsulation adhesive layer 11 is bonded to the structure to be packaged, the infrared light moves from the area outside the encapsulation adhesive layer 11 to a fitting recognition area 112, and the transmittance of the infrared light undergoes a first mutation. Then, the infrared light moves from one fitting recognition area 112 to the fitting area 111, and then moves radially along the fitting area 111, and the structure to be packaged is bonded to the fitting area 111. Finally, after the entire structure to be packaged is bonded to the fitting area 111 of the encapsulation adhesive layer 11, the infrared light moves from the fitting area 111 to another fitting recognition area 112, and then moves to the outside of the encapsulation adhesive layer 11, and the transmittance of the infrared light undergoes a second mutation. Therefore, through the two mutations in the transmittance of the infrared light, it is possible to automatically determine whether the wafer 51 to be cut is bonded to the fitting area 111 of the encapsulation adhesive layer 11, thereby improving the accuracy and yield of the encapsulation adhesive layer 11 bonding to the structure to be packaged.

[0017] The shape of the bonding area 111 matches the shape of the structure to be packaged, which can improve the yield of the packaging glue layer 11 being bonded to the structure to be packaged. In some embodiments, the bonding area 111 includes an arc-shaped edge to match the shape of the wafer structure to be packaged, thereby improving the bonding yield of the packaging glue layer 11. In addition, when the bonding area 111 is formed by a die-cutting or other cutting glue process, the arc-shaped edge can reduce the difficulty of the die-cutting or other cutting glue process.

[0018] The size of the bonding area 111 is larger than the size of the to-be-packaged surface of the to-be-packaged structure, so as to improve the problem of low precision of the to-be-packaged structure being bonded to the bonding area 111 due to bonding deviation. For example, for an 8-size wafer, the diameter of the bonding area 111 can be 200 mm to 240 mm. For a 12-size wafer, the diameter of the bonding area 111 can be 300 mm to 340 mm.

[0019] In some embodiments, see Figure 1 As shown, the shape of the bonding area 111 can be circular. At this time, the edge of the bonding area 111 is an arc edge.

[0020] In other embodiments, the fitting area 111 may include an arc-shaped edge and a positioning edge, wherein the arc-shaped edge is connected to the positioning edge to match the shape of the structure to be packaged having the positioning edge. In other embodiments, the positioning edge may be a straight edge.

[0021] In some embodiments, the fitting recognition area 112 includes an arc-shaped edge, which reduces the difficulty of forming the fitting recognition area 112 by using die-cutting or other cutting processes.

[0022] In some embodiments, the fitting recognition area 112 includes a first arcuate edge 112A. The first arcuate edge 112A is adjacent to the edge of the fitting area 111 to achieve a smooth transition between the fitting area 111 and the fitting recognition area 112, thereby reducing the difficulty of switching between the fitting area 111 and the fitting recognition area 112 during the die cutting process.

[0023] In some embodiments, Figure 1 As shown, the first arc-shaped edge 112A is sunken toward the fitting positioning area 112 .

[0024] In some embodiments, the fitting recognition area 112 further includes a second arc-shaped edge 112B. The second arc-shaped edge 112B is connected between the two first arc-shaped edges 112A, which reduces the difficulty of forming the fitting recognition area 112 by using die-cutting or other cutting and gluing processes.

[0025] In some embodiments, the second arc-shaped edge 112B protrudes away from the fitting positioning area 112 .

[0026] In some embodiments, the curvature of the first arcuate edge 112A is smaller than the curvature of the second arcuate edge 112B, so that the curvature of the first arcuate edge 112A is larger, reducing the difficulty of forming the first arcuate edge 112A by die cutting and other cutting processes. At the same time, the curvature of the second arcuate edge 112B is smaller, shortening the time to form the curvature of the second arcuate edge 112B.

[0027] In some embodiments, see Figure 1 As shown, the width W1 of the bonding recognition area 112 is 5 mm to 30 mm, which reduces the risk that the bonding detection light such as infrared light cannot identify the bonding recognition area 112, and also shortens the manufacturing time of the bonding recognition area 112.

[0028] In some embodiments, see Figure 1 As shown, the length LG1 of the bonding recognition area 112 is 5 mm to 40 mm, which reduces the risk that the bonding detection light such as infrared light cannot identify the bonding recognition area 112, and also shortens the manufacturing time of the bonding recognition area 112.

[0029] The width W1 of the laminating recognition area 112 is equal to the dimension of the laminating recognition area 112 along its width direction. The length LG1 of the laminating recognition area 112 is equal to the dimension of the laminating recognition area 112 along the radial direction of the laminating area 111. The direction corresponding to the width W1 of the laminating recognition area 112 is perpendicular to the direction corresponding to the length LG1 of the laminating recognition area 112.

[0030] In some embodiments, the thickness of the packaging adhesive layer 11 is 10 microns to 150 microns, which ensures the packaging effect of the packaging adhesive layer 11 on the semiconductor device and improves the transmittance of the packaging adhesive layer 11 to the infrared light and other bonding detection light.

[0031] Optionally, the thickness of the packaging glue layer 11 is 15 micrometers to 100 micrometers, 20 micrometers to 80 micrometers, or 25 micrometers to 60 micrometers.

[0032] It is understandable that the thickness of the encapsulation glue layer 11 can be any value between 10 microns and 150 microns, for example, 20 microns, 25 microns, 30 microns, 35 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, 110 microns or 120 microns.

[0033] In some embodiments, the encapsulation adhesive layer 11 includes a modified epoxy resin and a curing agent. The modified epoxy resin includes a bisphenol A epoxy resin and a phenolic F epoxy resin. The bisphenol A epoxy resin and the phenolic F epoxy resin are compounded to reduce the heat shrinkage rate of the encapsulation adhesive layer 11, improve the problem of low transmittance of infrared light when the encapsulation adhesive layer 11 and the dicing layer 21 thereunder pass through both due to the large difference in heat shrinkage rate, and improve the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulation adhesive layer 11 when observing the internal structure of the semiconductor device encapsulated by the encapsulation adhesive layer 11 using internal detection light such as infrared light.

[0034] It should be noted that in the related art, the thermal shrinkage rate between the encapsulation adhesive layer and the dicing layer is relatively large, for example, the difference between the two is greater than or equal to 0.22, resulting in wrinkles at the interface between the cured encapsulation adhesive layer and the dicing layer. After passing through the wrinkles, the infrared light will be diffusely reflected, resulting in a low transmittance of the infrared light through the cured encapsulation adhesive layer and the dicing layer, and the image of the internal structure of the semiconductor device observed by internal detection light such as infrared light is blurred.

[0035] It should be noted that bisphenol A epoxy resin has good mechanical properties and electrical insulation properties as well as good toughness and adhesion, and phenolic F epoxy resin has a high epoxy content and high viscosity, which is conducive to improving the crosslinking density of the cured product. The two are compounded to reduce the thermal shrinkage rate of the encapsulation adhesive layer 11 while ensuring that the cured encapsulation adhesive layer 11 has good mechanical properties and electrical insulation properties as well as good toughness and adhesion.

[0036] In some embodiments, the bisphenol A epoxy resin may include at least one of a liquid bisphenol A epoxy resin, a solid bisphenol A epoxy resin, and a modified bisphenol A epoxy resin. For example, the bisphenol A epoxy resin may be a modified bisphenol A epoxy resin.

[0037] In some embodiments, the mass percentage of the modified epoxy resin in the packaging adhesive layer 11 is 13% to 22%, which reduces the thermal shrinkage of the packaging adhesive layer 11 while taking into account the viscosity and other properties of the cured packaging adhesive layer 11.

[0038] Optionally, the mass percentage of the modified epoxy resin in the packaging adhesive layer 11 is 15% to 18%, 17.5 to 18.5%, 14% to 16%, 13% to 20% or 13% to 18%.

[0039] It is understandable that the mass percentage of the modified epoxy resin in the encapsulation adhesive layer 11 can be any value between 13% and 22%, for example, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21% or 22%.

[0040] In some embodiments, the mass ratio of bisphenol A epoxy resin to phenolic F epoxy resin is (10~14): (1~9), which reduces the thermal shrinkage of the encapsulation adhesive layer 11 itself and improves the problem of inconsistent thermal shrinkage of the encapsulation adhesive layer 11 and the dicing layer 21, resulting in low transmittance of infrared light passing through the two.

[0041] Optionally, the mass ratio of bisphenol A epoxy resin to phenolic F epoxy resin is (10-14): (2-8). In this way, the heat shrinkage of the encapsulation adhesive layer 11 itself is reduced, and the problem of low transmittance of infrared light passing through the two due to the inconsistency between the heat shrinkage of the encapsulation adhesive layer 11 and the heat shrinkage of the dicing layer 21 is improved. In addition, this ratio also improves the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing, so as to improve the transmittance of the encapsulation adhesive layer 11 itself to infrared light after curing.

[0042] It should be noted that, in the practice of using the compound of phenolic F epoxy resin and bisphenol A epoxy resin to reduce the thermal shrinkage of the encapsulation adhesive layer 11, the applicant found that the amount of phenolic F epoxy resin added would affect the transmittance of the encapsulation adhesive layer 11 to infrared light before and after curing. After analysis, it was found that since the color of the phenolic F epoxy resin itself is light brown, this color would affect the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing, and further affect the transmittance of the encapsulation adhesive layer 11 itself to infrared light after curing.

[0043] Based on this finding, the embodiment of the present application optimizes the ratio of bisphenol A epoxy resin and phenolic F epoxy resin, so that phenolic F epoxy resin has a suitable proportion in the modified epoxy resin, thereby reducing the thermal shrinkage rate of the encapsulation adhesive layer 11 itself and improving the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing.

[0044] Optionally, the mass ratio of bisphenol A epoxy resin to novolac F epoxy resin is (10-14):(3-6).

[0045] In some embodiments, in the encapsulation adhesive layer 11, the mass ratio of the bisphenol A epoxy resin to the mass of the phenolic F epoxy resin is 1.5-8, which reduces the thermal shrinkage of the encapsulation adhesive layer 11 itself and improves the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing. In addition, the large proportion of the bisphenol A epoxy resin can also ensure that the encapsulation adhesive layer 11 after curing has good toughness and viscosity as well as good mechanical properties and electrical insulation properties.

[0046] Optionally, in the packaging adhesive layer 11 , the ratio of the mass of the bisphenol A epoxy resin to the mass of the novolac F epoxy resin is 1.8-6 or 2-4.

[0047] It is understandable that in the encapsulation adhesive layer 11 , the ratio of the mass of the bisphenol A epoxy resin to the mass of the novolac F epoxy resin can be any value between 1.5 and 8. For example, 1.5, 2, 3, 4, 5, 6, 7 or 8.

[0048] In some embodiments, the mass ratio of bisphenol A epoxy resin to phenolic F epoxy resin is (10-14): (1-9), and the epoxy equivalent of bisphenol A epoxy resin is 180g / eq-190g / eq, and the epoxy equivalent of phenolic F epoxy resin is 220g / eq-240g / eq. The two epoxy resins with reasonable epoxy equivalents are compounded in a suitable ratio to reduce the thermal shrinkage of the encapsulation adhesive layer 11 itself while improving the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing. In addition, the compounding of two epoxy resins with different epoxy equivalents in a certain ratio also takes into account other properties of the encapsulation adhesive layer 11, such as storage modulus, glass transition temperature, viscosity, and thermal expansion coefficient.

[0049] It should be noted that, for the encapsulation adhesive layer 11, the selection of the epoxy equivalent of the epoxy resin needs to consider the balance between the various properties of the encapsulation adhesive layer 11, rather than simply making the epoxy equivalent higher or lower. In the embodiment of the present application, while ensuring that other properties of the encapsulation adhesive layer 11 meet the basic requirements, the epoxy equivalent of the bisphenol A epoxy resin is selected to be 180g / eq~190g / eq and the epoxy equivalent of the phenolic F type epoxy resin is selected to be 220g / eq~240g / eq, thereby reducing the heat shrinkage of the encapsulation adhesive layer 11 itself and improving the transmittance of the encapsulation adhesive layer 11 itself to infrared light before curing.

[0050] It is understandable that the epoxy equivalent of the bisphenol A epoxy resin can be at least one between 180 g / eq and 190 g / eq, such as 180 g / eq, 185 g / eq or 190 g / eq.

[0051] It is understandable that the epoxy equivalent of the novolac F epoxy resin can be at least one between 220 g / eq and 240 g / eq, such as 220 g / eq, 225 g / eq, 230 g / eq, 235 g / eq or 240 g / eq.

[0052] In some embodiments, the encapsulation adhesive layer 11 further comprises phenoxy resin. Phenoxy resin has good flexibility and adhesion, and improves the viscosity of the encapsulation adhesive layer 11 after curing, while improving the mechanical properties of the encapsulation adhesive layer 11 after curing.

[0053] In some embodiments, the mass ratio of phenoxy resin to modified epoxy resin is (8-12): (13-22), which improves the transmittance of the cured encapsulation adhesive layer 11 to infrared light while taking into account the viscosity and mechanical properties of the cured encapsulation adhesive layer 11.

[0054] Optionally, the mass ratio of phenoxy resin to modified epoxy resin is (8-12):(15-20), or (8-12):(15-18).

[0055] In some embodiments, in the encapsulation adhesive layer 11, the ratio of the mass of the modified epoxy resin to the mass of the phenoxy resin is greater than 1 and less than or equal to 2.5, thereby improving the transmittance of the cured encapsulation adhesive layer 11 to infrared light while taking into account the viscosity and mechanical properties of the cured encapsulation adhesive layer 11.

[0056] Optionally, in the packaging adhesive layer 11 , the ratio of the mass of the modified epoxy resin to the mass of the phenoxy resin is 1.2-2.2 or 1.5-1.8.

[0057] In some embodiments, the weight average molecular weight of the phenoxy resin is 30,000 g / mol-40,000 g / mol, which improves the viscosity and mechanical properties of the cured encapsulation adhesive layer 11 .

[0058] It is understood that the weight average molecular weight of the phenoxy resin may be at least one of 30,000 g / mol to 40,000 g / mol, for example, 30,000 g / mol, 35,000 g / mol or 40,000 g / mol.

[0059] In some embodiments, the mass ratio of the curing agent to the modified epoxy resin is (16-20): (13-22), which ensures that the modified epoxy resin can fully react and cure.

[0060] In some embodiments, the curing agent includes a naphthol curing agent. The hydroxyl groups in the naphthol curing agent react with the epoxy groups in the epoxy resin, and the fragments are cross-linked into a three-dimensional structure molecule through gradual polymerization, thereby improving the strength of the cured encapsulation adhesive layer 11. In some embodiments, the hydroxyl equivalent of the naphthol curing agent is 100 g / eq~120 g / eq.

[0061] In some embodiments, the encapsulation adhesive layer 11 further includes a curing accelerator. The mass ratio of the curing agent to the curing accelerator is (16-20):1, which improves the strength of the encapsulation adhesive layer 11 after curing and accelerates the curing reaction rate.

[0062] In some embodiments, at least one of the phosphine-based curing accelerators may include, but is not limited to, triphenylphosphine.

[0063] In some embodiments, the encapsulation adhesive layer 11 further includes a colorant. The colorant is used to dye the encapsulation adhesive layer 11. The mass percentage of the colorant in the encapsulation adhesive layer 11 is 0.05% to 0.3%, so as to ensure the recognition of the logo printed on the structure to be encapsulated after encapsulation, and at the same time improve the influence of too large a proportion of the colorant on the transmittance of infrared light passing through the encapsulation adhesive layer 11 before and after curing.

[0064] Optionally, the mass percentage of the colorant in the encapsulation glue layer 11 is 0.05%~0.25% to ensure the recognition of the logo printed on the encapsulated structure after encapsulation, while improving the effect of excessive proportion of colorant on the transmittance of infrared light through the encapsulation glue layer 11 before and after curing.

[0065] Optionally, the mass percentage of the colorant in the encapsulation adhesive layer 11 is 0.05%-0.2%, 0.08%-0.18% or 0.1%-0.18%.

[0066] It is understandable that the mass percentage of the colorant in the encapsulation adhesive layer 11 can be any value between 0.05% and 0.25%, such as 0.05%, 0.1%, 0.15%, 0.2%, 0.23% or 0.25%.

[0067] In some embodiments, the colorant includes, but is not limited to, black colorants such as carbon black, which improve the recognition of the logo printed on the structure to be packaged.

[0068] In some embodiments, the particle size of the colorant is 10 nanometers to 25 nanometers, which improves the uniformity of the colorant dispersed in the packaging glue layer 11 .

[0069] Optionally, the particle size of the colorant is 12 nm to 22 nm or 15 nm to 20 nm.

[0070] In some embodiments, the packaging adhesive layer 11 further includes fillers, which can improve the mechanical strength and glass transition temperature of the packaging adhesive layer 11 after curing.

[0071] In some embodiments, the mass percentage of the filler in the encapsulation adhesive layer 11 is 48% to 55%, ensuring that the modified epoxy resin or other resin can infiltrate the filler, thereby improving the bonding strength between the filler and the resin and improving the mechanical strength and glass transition temperature of the encapsulation adhesive layer 11 after curing.

[0072] In some embodiments, the D50 particle size of the filler is 0.2 micrometers to 1 micrometer, which improves the dispersion uniformity of the filler and improves the mechanical strength and glass transition temperature of the cured encapsulation adhesive layer 11 .

[0073] Optionally, the D50 particle size of the filler is 0.4 micron to 0.8 micron.

[0074] In some embodiments, the filler comprises silica. In some embodiments, the silica may comprise spherical silica.

[0075] In some embodiments, the maximum transmittance of the encapsulation adhesive layer 11 to light with a wavelength of 400nm~1100nm is greater than or equal to 20%. Since the transmittance of the encapsulation adhesive layer 11 to light before curing is generally greater than its maximum transmittance to light after curing, improving the transmittance of the encapsulation adhesive layer 11 to light with a wavelength of 400nm~1100nm before curing can improve the maximum transmittance of the encapsulation adhesive layer 11 to light with a wavelength of 400nm~1100nm after curing.

[0076] Optionally, the maximum transmittance of the packaging glue layer 11 to light with a wavelength of 400 nm to 1100 nm is greater than or equal to 25%, 30%, or 33%.

[0077] In some embodiments, the maximum transmittance of the encapsulation layer 11 to light with a wavelength of 400nm-1100nm is less than or equal to 60%, so that when the encapsulation layer is attached, the difference in transmittance between the encapsulation layer and other film layers can be used to achieve attachment and positioning.

[0078] Optionally, the maximum transmittance of the packaging glue layer 11 to light with a wavelength of 400 nm to 1100 nm is 25% to 55%, 30% to 48% or 33% to 45%.

[0079] Optionally, the maximum transmittance of the encapsulation glue layer 11 to light with a wavelength of 400 nm to 1100 nm can be any value between 20% and 60%, for example, 20%, 25%, 30%, 33%, 35%, 40%, 45%, 50%, 55% or 60%.

[0080] In some embodiments, the maximum transmittance of the encapsulation adhesive layer 11 to infrared light is greater than or equal to 20%, so as to improve the transmittance of the encapsulation adhesive layer 11 to infrared light before curing, and further improve the transmittance of the encapsulation adhesive layer 11 to infrared light after curing.

[0081] Optionally, the maximum transmittance of the packaging glue layer 11 to infrared light is greater than or equal to 25%, 30%, or 33%.

[0082] In some embodiments, the maximum transmittance of the packaging glue layer 11 to infrared light is less than or equal to 60%.

[0083] Optionally, the maximum transmittance of the packaging glue layer 11 to infrared light is 25%-55%, 30%-48% or 33%-45%.

[0084] Optionally, the maximum transmittance of the encapsulation glue layer 11 to infrared light can be any value between 20% and 60%, for example, 20%, 25%, 30%, 33%, 35%, 40%, 45%, 50%, 55% or 60%.

[0085] In some embodiments, the wavelength of the infrared light may be 850 nanometers to 950 nanometers, but is not limited thereto.

[0086] In some embodiments, the maximum transmittance of the cured encapsulation adhesive layer 11 to light with a wavelength of 400 nm to 1100 nm is greater than or equal to 17.5%. The process parameters for curing the encapsulation adhesive layer 11 include: a temperature of 125° C. to 135° C. and heating for 1 hour to 3 hours. In this way, the image clarity of the internal structure of the semiconductor device encapsulated by the infrared light detection encapsulation adhesive layer 11 is improved.

[0087] Optionally, the maximum transmittance of the cured packaging adhesive layer 11 to light with a wavelength of 400nm~1100nm is greater than or equal to 23%, 25% or 28%, further improving the image clarity of the internal structure of the semiconductor device encapsulated by the infrared light detection packaging adhesive layer 11.

[0088] In some embodiments, the maximum transmittance of the cured encapsulation adhesive layer 11 to infrared light is greater than or equal to 17.5%.

[0089] Optionally, the maximum transmittance of the cured packaging adhesive layer 11 to infrared light is greater than or equal to 23%, 25% or 28%, further improving the image clarity of the internal structure of the semiconductor device encapsulated by the infrared light detection packaging adhesive layer 11.

[0090] Exemplarily, the process parameters for curing the packaging adhesive layer 11 include: a temperature of 130° C. and heating for 2 hours.

[0091] In some embodiments, the heat shrinkage rate of the encapsulation adhesive layer 11 when heated at 125°C~135°C for 1 hour~3 hours is 0.1%~0.3%, thereby reducing the heat shrinkage rate of the encapsulation adhesive layer 11, improving the problem of low transmittance of infrared light passing through the encapsulation adhesive layer 11 and the dicing layer 21 thereunder due to the large difference in heat shrinkage rate, and improving the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulation adhesive layer 11 when detecting infrared light.

[0092] Optionally, the heat shrinkage rate of the encapsulation adhesive layer 11 when heated at 125° C. to 135° C. for 1 hour to 3 hours is 0.12% to 0.25%, 0.13% to 0.2% or 0.15% to 0.25%.

[0093] It can be seen that the encapsulation adhesive layer 11 of the embodiment of the present application utilizes the positioning function of its own fitting recognition area 112 to improve the fitting accuracy and yield of the encapsulation adhesive layer 11. In addition, in the embodiment of the present application, the components and component ratios of the encapsulation adhesive layer 11 are optimized to improve the maximum transmittance of the encapsulation adhesive layer 11 to light with a wavelength of 400nm~1100nm before curing, and ensure that the transmittance of the fitting recognition area 112 to light with a wavelength of 400nm~1100nm is within a suitable range, thereby improving the fitting accuracy of the encapsulation adhesive layer 11 by combining infrared light and other fitting detection light with the fitting recognition area 112. In addition, the difference in thermal shrinkage between the encapsulation adhesive layer 11 and the slicing layer 21 is reduced, the transmittance of the encapsulation adhesive layer 11 to infrared light after curing is improved, and the image clarity of the internal structure of the semiconductor device encapsulated by the encapsulation adhesive layer 11 is improved by infrared light detection. In other words, the components and component ratios of the encapsulation adhesive layer 11 are optimized to meet the performance requirements of the encapsulation adhesive layer 11 before and after curing.

[0094] See also Figures 2 to 4 As shown, the embodiment of the present application also provides a composite film 100. The composite film 100 is not only used for packaging wafers in the field of advanced packaging, but also for cutting packaged wafers, which simplifies the packaging and cutting processes of the wafers and improves the lamination accuracy and yield of the packaging adhesive layer 11. In addition, the composite film 100 also improves its adhesion to the iron frame 61, thereby improving the packaging efficiency.

[0095] See also Figures 2 to 3 As shown, the composite film 100 includes the above-mentioned encapsulation adhesive layer 11 and the scribe layer 21. The encapsulation adhesive layer 11 is stacked with the scribe layer 21. The orthographic projection of the encapsulation adhesive layer 11 on the scribe layer 21 is located in the scribe layer 21. In this way, after the encapsulation adhesive layer 11 is attached to the structure to be encapsulated, when the encapsulated structure to be encapsulated and the encapsulation adhesive layer 11 need to be cut, the scribe layer 21 can provide a sufficiently large support area.

[0096] In some embodiments, the maximum transmittance of light with a wavelength of 400nm to 1100nm passing through the stack composed of the scribe layer and the packaging glue layer is greater than or equal to 20%. In this way, the maximum transmittance of light with a wavelength of 400nm to 1100nm passing through the stack composed of the scribe layer and the packaging glue layer is ensured to be relatively large, which is conducive to the maximum transmittance of the cured packaging glue layer 11 and the scribe layer to light with a wavelength of 400nm to 1100nm being relatively large, thereby improving the image clarity of the internal structure of the semiconductor device observed by infrared light.

[0097] Optionally, a maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through a stack formed by the dicing layer and the packaging glue layer is greater than or equal to 25%, 30%, or 33%.

[0098] In some embodiments, the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the stack formed by the dicing layer and the packaging glue layer is less than or equal to 60%.

[0099] It is understood that the maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the stack composed of the dicing layer and the encapsulation glue layer can be any value between 20% and 60%, for example, 20%, 25%, 30%, 33%, 35%, 40%, 45%, 50%, 55% or 60%.

[0100] In some embodiments, the maximum transmittance of light with a wavelength of 400nm to 1100nm passing through the stack composed of the scribe layer and the cured encapsulation adhesive layer is greater than or equal to 17.5%, and the process parameters for curing the encapsulation adhesive layer include: a temperature of 125°C to 135°C and heating for 1 hour to 3 hours. In this way, the transmittance of infrared light passing through the stack composed of the scribe layer and the cured encapsulation adhesive layer is also relatively large, improving the image clarity of the internal structure of the semiconductor device observed by infrared light.

[0101] Optionally, the maximum transmittance of light with a wavelength of 400nm to 1100nm passing through the stack consisting of the slicing layer and the cured packaging glue layer is greater than or equal to 23%, 25% or 28%, further improving the image clarity of the internal structure of the semiconductor device observed by infrared light.

[0102] In some embodiments, see Figures 2 to 4As shown, the composite film 100 also includes a double-sided adhesive layer 31. The double-sided adhesive layer 31 is stacked with the dicing layer 21. The double-sided adhesive layer 31 is arranged around the bonding area 111. There is a gap G between the double-sided adhesive layer 31 and the edge of the bonding area 111. The bonding recognition area 112 is located in the gap G. In the process of cutting the structure to be packaged and the packaging adhesive layer 11, the double-sided adhesive layer 31 plays the role of bonding the iron frame and the dicing layer 21, thereby reducing the risk of the structure to be packaged on the dicing layer 21 falling off. Moreover, in the gap G between the double-sided adhesive layer 31 and the bonding area 111, the area other than the bonding recognition area 112 cannot achieve bonding positioning. In other words, the gap G between the double-sided adhesive layer 31 and the bonding area 111 cooperates with the bonding recognition area 112 to improve the bonding positioning accuracy of the bonding recognition area 112.

[0103] In some embodiments, see Figure 2 As shown, the double-sided adhesive layer 31 is in the shape of a ring. When the double-sided adhesive layer 31 is in the shape of a ring, the diameter of the inner circle of the double-sided adhesive layer 31 is greater than the diameter of the bonding area 111 of the packaging adhesive layer 11.

[0104] In some embodiments, the double-sided adhesive layer 31 has a color to enhance the recognition of the double-sided adhesive layer 31 and facilitate fixing the double-sided adhesive layer 31 on the iron frame. In some embodiments, the color of the double-sided adhesive layer 31 is selected from at least one of black, blue and white.

[0105] In some embodiments, see Figures 2 to 4 As shown, the laminating recognition area 112 partially overlaps with the double-sided adhesive layer 31 , which reduces the laminating accuracy requirement when the double-sided adhesive layer 31 and the packaging adhesive layer 11 are laminated, thereby reducing the difficulty of the process of forming the composite film 100 .

[0106] In some embodiments, see Figure 3 and Figure 4 As shown, along the radial direction of the bonding area 111, the size of the overlapped portion of the bonding recognition area 112 and the double-sided adhesive layer 31 is C. C is 1 micron to 40 microns. In this way, the bonding accuracy requirement when the double-sided adhesive layer 31 and the packaging adhesive layer 11 are bonded is reduced, and the difficulty of forming the bonding recognition area 112 is reduced.

[0107] In some embodiments, see Figure 3 As shown, when the lamination recognition area 112 partially overlaps with the double-sided adhesive layer 31 , part of the double-sided adhesive layer 31 may be located between part of the lamination recognition area 112 and the scribe layer 21 .

[0108] In other embodiments, see Figure 4 As shown, when the lamination recognition area 112 partially overlaps with the double-sided adhesive layer 31 , part of the lamination recognition area 112 may be located between the double-sided adhesive layer 31 and the scribe layer 21 .

[0109] In some embodiments, the thickness of the double-sided adhesive layer 31 is 20um~80um. In this way, the double-sided adhesive layer 31 has a suitable thickness, and during the process of bonding it to the iron frame 61 and the high-temperature curing process of the encapsulation adhesive layer 11, it is ensured that the double-sided adhesive layer 31 can provide sufficient viscosity, reducing the risk of the double-sided adhesive layer 31 falling off the iron frame 61, thereby reducing the risk of the structure to be packaged falling. In addition, the double-sided adhesive layer 31 has a suitable thickness, and during the process of bonding it to the iron frame 61 and the high-temperature curing process of the encapsulation adhesive layer 11, it also reduces the risk of the double-sided adhesive layer 31 shrinking due to excessive thickness, resulting in the edge of the double-sided adhesive layer 31 connecting the iron frame 61 warping and causing the double-sided adhesive layer 31 to fall off the iron frame 61.

[0110] Optionally, the thickness of the double-sided adhesive layer 31 is 20um-60um or 30um-50um.

[0111] It is understandable that the thickness of the double-sided adhesive layer 31 can be any value between 20um and 80um, for example, 20um, 30um, 40um, 50um, 60um, 70um or 80um.

[0112] In some embodiments, the double-sided adhesive layer 31 includes a substrate layer and adhesive layers located on both sides of the substrate layer.

[0113] In some embodiments, the substrate layer may include a polyethylene terephthalate layer, but is not limited thereto.

[0114] In some embodiments, the adhesive layer of the double-sided adhesive layer 31 may include any one of acrylic adhesive and silicone adhesive.

[0115] In some embodiments, the heat shrinkage rate of the base material layer of the double-sided adhesive layer 31 when heated at 125°C~135°C for 1h~3h is less than the heat shrinkage rate of the encapsulation adhesive layer 11 when heated at 125°C~135°C for 1h~3h. In this way, the heat shrinkage rate of the base material layer is reduced, and the risk of the double-sided adhesive layer 31 falling off the iron frame 61 and the edge warping during the high-temperature curing process of the encapsulation adhesive layer 11 is reduced. In addition, when the fitting and recognition area 112 of the encapsulation adhesive layer 11 overlaps with the double-sided adhesive layer 31, the heat shrinkage rate of the double-sided adhesive layer 31 is relatively small, and the stress applied by the double-sided adhesive layer 31 to the fitting and recognition area 112 of the encapsulation adhesive layer 11 is also relatively small, thereby reducing the risk of deformation of the fitting and recognition area 112.

[0116] In some embodiments, the heat shrinkage rate of the substrate layer of the double-sided adhesive layer 31 is 0.1%-0.15% when heated at 125° C.-135° C. for 1 h-3 h.

[0117] In some embodiments, the thermal shrinkage rate of the dicing layer 21 heated at 125° C. to 135° C. for 1 h to 3 h is smaller than the thermal shrinkage rate of the encapsulation adhesive layer 11 heated at 125° C. to 135° C. for 1 h to 3 h. In this way, the risk of the dicing layer 21 being significantly deformed during the high-temperature curing process of the encapsulation adhesive layer 11 is reduced, ensuring that the dicing layer 21 can provide a sufficiently large support area.

[0118] In some embodiments, the thermal shrinkage rate of the dicing layer 21 when heated at 125°C~135°C for 1h~3h is HS1. The thermal shrinkage rate of the encapsulation adhesive layer 11 when heated at 125°C~135°C for 1h~3h is HS2. The absolute value of the difference between HS2 and HS1 is less than 0.2%. In this way, the difference in thermal shrinkage rate between the dicing layer 21 and the encapsulation adhesive layer 11 is small, which improves the problem of wrinkles at the intersection of the interface between the two due to inconsistent thermal shrinkage rates. After the encapsulation adhesive layer 11 is cured, the transmittance of infrared light passing through the dicing layer 21 and the encapsulation adhesive layer 11 is improved, thereby improving the image clarity of the internal structure of the wafer observed using infrared light.

[0119] Optionally, the absolute value of the difference between HS2 and HS1 is less than 0.15%, 0.12%, 0.1%, 0.08%, 0.06% or 0.03%.

[0120] In some embodiments, the heat shrinkage rate of the substrate layer of the double-sided adhesive layer 31 when heated at 125° C. to 135° C. for 1 h to 3 h is HS3. The absolute value of the difference between HS3 and HS1 is less than the absolute value of the difference between HS2 and HS1. In this way, the heat shrinkage rate of the substrate layer of the double-sided adhesive layer 31 is reduced, and its high temperature resistance is improved.

[0121] In some embodiments, the thermal shrinkage of the dicing layer 21 heated at 125° C. to 135° C. for 1 h to 3 h is 0.1% to 0.15%. In this way, the thermal shrinkage of the dicing layer 21 is small, reducing the risk of significant deformation of the dicing layer 21 during the high-temperature curing process of the encapsulation adhesive layer 11.

[0122] In some embodiments, the heat shrinkage rate of the encapsulation adhesive layer 11 is 0.1% to 0.3% when heated at 125° C. to 135° C. for 1 h to 3 h. In this way, the heat shrinkage rate of the encapsulation adhesive layer 11 is relatively small, thereby reducing the difference in heat shrinkage rate between the encapsulation adhesive layer 11 and the dicing layer 21 .

[0123] Optionally, the heat shrinkage rate of the packaging adhesive layer 11 when heated at 125° C. to 135° C. for 1 h to 3 h is 0.12% to 0.25% or 0.15% to 0.2%.

[0124] In some embodiments, see Figures 2 to 4 As shown, the dicing layer 21 includes a dicing tape 22. The dicing tape 22 provides support for the dicing process of the wafer 51 to be diced.

[0125] In some embodiments, the dicing tape 22 includes, but is not limited to, a layer of thermoplastic polyurethanes (TPU).

[0126] In some embodiments, the thickness of the dicing tape 22 may be greater than the thickness of the packaging adhesive layer 11 to ensure that the dicing tape 22 provides sufficient supporting force.

[0127] In some embodiments, the thickness of the dicing tape 22 may be greater than the thickness of the double-sided adhesive layer 31 to ensure that the dicing tape 22 provides sufficient supporting force.

[0128] In some embodiments, the thickness of the cutting tape 22 is 30 mm to 200 mm, ensuring that the cutting tape 22 provides sufficient support. Optionally, the thickness of the cutting tape 22 is 100 mm to 200 mm.

[0129] In some embodiments, see Figures 2 to 4 As shown, the dicing layer 21 also includes an antistatic adhesive layer 23 to reduce the risk of static electricity causing damage to the packaged structure. The antistatic adhesive layer 23 is located between the dicing tape 22 and the packaging adhesive layer 11.

[0130] In some embodiments, the peeling force between the antistatic adhesive layer 23 and the iron frame 61 is smaller than the peeling force between the double-sided adhesive layer 31 and the iron frame 61. In this way, the risk of the double-sided adhesive layer 31 falling off the iron frame 61 is reduced.

[0131] In some embodiments, the thickness of the antistatic adhesive layer 23 is smaller than the thickness of the double-sided adhesive layer 31 , thereby improving the adhesion between the double-sided adhesive layer 31 and the iron frame 61 .

[0132] In some embodiments, the thickness of the antistatic adhesive layer 23 is smaller than the thickness of the dicing tape 22 , so as to ensure that the dicing tape 22 provides sufficient supporting force.

[0133] In some embodiments, the antistatic adhesive layer 23 includes a pressure-sensitive adhesive layer and an antistatic material dispersed in the pressure-sensitive adhesive layer.

[0134] In some embodiments, the thickness of the pressure-sensitive adhesive layer is 5 mm to 50 mm.

[0135] In some embodiments, see Figures 2 to 4 As shown, the composite film 100 further includes a release layer 41. The release layer 41 is located on the side of the encapsulation adhesive layer 11 away from the dicing layer 21. The release layer 41 protects the encapsulation adhesive layer 11. When the composite film 100 needs to be used, the release layer 41 is peeled off to expose the encapsulation adhesive layer 11.

[0136] In some embodiments, the thickness of the release layer 41 is 5 mm to 300 mm.

[0137] In some embodiments, the release layer 41 comprises the same material as the base material layer of the double-sided adhesive layer 31. In some embodiments, the release layer 41 may comprise polyethylene glycol terephthalate (PET).

[0138] It should be noted that, when the dicing tape 22 includes a thermoplastic polyurethane layer and the release layer 41 includes polyethylene terephthalate, if the above-mentioned bonding and positioning area 112 of the encapsulating adhesive layer 11 is not provided, the bonding and positioning of the encapsulating adhesive layer cannot be effectively achieved due to the similar light transmittance between the dicing tape 22 and the release layer 41 it carries. In other words, for the dicing tape 22 including a thermoplastic polyurethane layer and the release layer 41 including polyethylene terephthalate, the provision of the bonding and positioning area 112 can effectively achieve the bonding and positioning of the encapsulating adhesive layer.

[0139] In some embodiments, when the release layer 41 and the base layer of the double-sided adhesive layer 31 include the same material, the heat shrinkage rate of the base layer of the double-sided adhesive layer 31 heated at 125°C to 135°C for 1h to 3h is less than the heat shrinkage rate of the release layer 41 heated at 125°C to 135°C for 1h to 3h. In this way, the heat shrinkage rate of the base layer of the double-sided adhesive layer 31 is reduced, and the high temperature resistance of the base layer of the double-sided adhesive layer 31 is improved, reducing the risk of the double-sided adhesive layer 31 falling off the iron frame 61 and the edge warping during the high temperature curing process of the encapsulation adhesive layer 11.

[0140] It can be seen from this that for the composite film 100 of the embodiment of the present application, a double-sided adhesive layer 31 is added to the composite film 100 to enhance the adhesion between the composite film 100 and the fixed structure such as the iron frame 61, thereby reducing the risk of the double-sided adhesive layer 31 falling off from the iron frame 61 before and after the encapsulation adhesive layer 11 is cured. In addition, the thickness of the double-sided adhesive layer 31 and the substrate layer are optimized to further reduce the risk of the double-sided adhesive layer 31 falling off from the iron frame 61 before and after the encapsulation adhesive layer 11 is cured. In addition, the positional relationship between the double-sided adhesive layer 31 and the fitting recognition area 112 of the encapsulation adhesive layer 11 enhances the transmittance of the cured encapsulation layer and the slicing layer 21 to infrared light, thereby enhancing the image clarity of the internal structure of the structure to be encapsulated by infrared light detection.

[0141] The method of using the composite film 100 of the embodiment of the present application is as follows: after the encapsulation adhesive layer 11 is attached to the surface of the wafer to be cut, the encapsulation adhesive layer 11 is cured. Then, infrared light is used to illuminate the wafer from the side of the dicing layer 21 away from the encapsulation adhesive layer 11 to observe whether the wafer 51 to be cut has abnormal cracking problems.

[0142] See also Figure 5As shown, the embodiment of the present application also provides a method for forming a composite film 100, comprising: Step S101: forming a packaging adhesive layer; Step S104: forming a scribing layer; Step S105: Laminating the packaging adhesive layer and the dicing layer.

[0143] The following combination Figures 6 to 17 The formation process of the composite film 100 according to the embodiment of the present application is described in detail.

[0144] See also Figures 6 to 8 As shown, the above step S101 is executed.

[0145] See also Figure 6 As shown, the packaging glue is coated on the first release layer 42 to obtain an initial packaging glue layer 110 located on the first release layer 42 .

[0146] See also Figure 7 and Figure 8 As shown, the initial encapsulation adhesive layer 110 is cut to obtain an encapsulation adhesive layer 11, which includes a bonding area 111 and a bonding recognition area 112. The bonding recognition area 112 is adjacent to the bonding area 111 and protrudes relative to the edge of the bonding area 111.

[0147] It should be noted that the components of the packaging adhesive layer 11 and the proportions of the components are as described above and will not be described again here.

[0148] In some embodiments, the initial encapsulation adhesive layer 110 may be cut by a die-cutting process to obtain the encapsulation adhesive layer 11. In an exemplary embodiment, a roller cutter is used to cut the initial encapsulation adhesive layer 110, and the initial encapsulation adhesive layer 110 is cut into an outer ring portion and an encapsulation adhesive layer 11, wherein the outer ring portion surrounds the encapsulation adhesive layer 11. Then, the outer ring portion is removed to obtain the encapsulation adhesive layer 11. It should be noted that in the process of cutting the initial encapsulation adhesive layer 110, it is ensured that the first release layer 42 is not cut through.

[0149] In some embodiments, the die-cutting process may use at least one of a flat knife and a round knife. In an exemplary embodiment, the die-cutting process may use a round knife to reduce the difficulty of forming the encapsulation glue layer 11.

[0150] In some embodiments, see Figures 9 to 13 As shown, before laminating the encapsulation glue layer and the dicing layer, the method further includes: Step S102: forming a double-sided adhesive layer 31; Step S103 : Laminating the double-sided adhesive layer 31 with the packaging adhesive layer 11 . The double-sided adhesive layer 31 is disposed around the packaging adhesive layer 11 . There is a gap between the double-sided adhesive layer 31 and the laminating area 111 . The laminating recognition area 112 is located in the gap and extends to overlap with the double-sided adhesive layer 31 .

[0151] See also Figures 9 to 11 As shown, the above step S102 is executed.

[0152] See also Fig. 9 As shown, forming the double-sided adhesive layer 31 includes: providing a double-sided adhesive composite layer. The double-sided adhesive composite layer includes two second release layers 43 and an initial double-sided adhesive layer 30 , and the initial double-sided adhesive layer 30 is located between the two second release layers 43 .

[0153] See also Fig.10 and Fig.11 As shown, a second release layer 43 is removed, and the initial double-sided adhesive layer 30 is cut by a die-cutting process to obtain a double-sided adhesive layer 31, which is in a ring shape. In an exemplary embodiment, a roller cutter is used to cut the initial double-sided adhesive layer 30, and the initial double-sided adhesive layer 30 is cut into a middle part and a double-sided adhesive layer 31, and the double-sided adhesive layer 31 is arranged around the middle part. Then, the middle part is removed to obtain the double-sided adhesive layer 31. In the process of cutting the initial double-sided adhesive layer 30, it is ensured that the other second release layer 43 is not cut through.

[0154] In some embodiments, the die-cutting process may use at least one of a flat knife and a round knife. In an exemplary embodiment, the die-cutting process may use a round knife to reduce the difficulty of forming the double-sided adhesive layer 31.

[0155] In some embodiments, Fig.12 and Fig.13 As shown, execute the above step S103.

[0156] In some embodiments, see Fig.12 As shown, the double-sided adhesive layer 31 is bonded to the encapsulation adhesive layer 11, including: bonding the double-sided adhesive layer 31 to the encapsulation adhesive layer 11, part of the double-sided adhesive layer 31 overlaps with the bonding recognition area 112, and the overlapping part of the double-sided adhesive layer 31 and the bonding recognition area 112 protrudes from other parts of the double-sided adhesive layer 31.

[0157] In some embodiments, see Fig.13 As shown, the double-sided adhesive layer 31 is bonded to the encapsulation adhesive layer 11, including: bonding the encapsulation adhesive layer 11 to the double-sided adhesive layer 31, part of the double-sided adhesive layer 31 overlaps with the bonding recognition area 112, and the part where the bonding recognition area 112 overlaps with the double-sided adhesive layer 31 protrudes from other parts of the bonding recognition area 112.

[0158] See also Figures 14 to 17As shown, the above steps S104 and S105 are executed.

[0159] In some embodiments, see Fig.14 and Fig.15 As shown, the above step S104 , namely forming the dicing layer 21 , includes: providing a dicing tape 22 ; and forming an antistatic adhesive layer 23 on the dicing tape 22 .

[0160] In some embodiments, the antistatic adhesive layer 23 can be formed on the dicing tape 22 by coating or other processes.

[0161] The dicing tape 22 provides support for the dicing process of the wafer 51 to be diced. In some embodiments, the dicing tape 22 includes a thermoplastic polyurethane layer, but is not limited thereto.

[0162] In some embodiments, the thickness of the dicing tape 22 is between 30 mm and 200 mm.

[0163] In some embodiments, the peeling force between the antistatic adhesive layer 23 and the iron frame 61 is smaller than the peeling force between the double-sided adhesive layer 31 and the iron frame 61. In this way, the risk of the double-sided adhesive layer 31 falling off the iron frame 61 is reduced.

[0164] In some embodiments, the antistatic adhesive layer 23 includes a pressure-sensitive adhesive layer and an antistatic material dispersed in the pressure-sensitive adhesive layer.

[0165] In some embodiments, the thickness of the pressure-sensitive adhesive layer is 5 mm to 50 mm.

[0166] In some embodiments, see Fig.12 , Fig.14 and Fig.16 As shown, remove the second release layer 43 under the double-sided adhesive layer 31, and adhere the dicing layer 21 to Fig.12 A composite film 100 is obtained on the double-sided adhesive layer 31 and the packaging adhesive layer 11.

[0167] In some embodiments, see Fig.13 , Fig.15 and Fig.17 As shown, remove the second release layer 43 under the double-sided adhesive layer 31, and adhere the dicing layer 21 to Fig.13 A composite film 100 is obtained on the double-sided adhesive layer 31 and the packaging adhesive layer 11.

[0168] It can be seen from this that the method for forming the composite film 100 of the embodiment of the present application reduces the requirement for the lamination accuracy between the encapsulation adhesive layer 11 and the double-sided adhesive layer 31 , thereby simplifying the formation process of the composite film 100 .

[0169] See also Fig.18 As shown, the embodiment of the present application also provides a packaging method for a semiconductor device, comprising: Step S201: providing the composite film and the wafer to be cut; Step S202: laminating the wafer to be cut to the laminating area according to the laminating recognition area; Step S205: cutting the wafer to be cut and the packaging layer to obtain a plurality of packaged semiconductor devices, wherein the packaged semiconductor devices include semiconductor devices and packaging layers located on the semiconductor devices, wherein the semiconductor devices are obtained by cutting the wafer to be cut, and the packaging layers are obtained by cutting the packaging layer 11.

[0170] In the semiconductor device packaging method of the embodiment of the present application, during the bonding stage of the packaging adhesive layer, the wafer to be cut is bonded to the bonding area based on the bonding recognition area of ​​the packaging adhesive layer, which can improve the bonding accuracy and yield of the packaging adhesive layer. In addition, after the packaging adhesive layer encapsulates the wafer to be cut, the wafer to be cut can also be cut, which significantly improves the processing efficiency of the wafer.

[0171] See also Fig.19 As shown, the above step S201 is performed. The wafer 51 to be cut can be a 6-inch wafer, an 8-inch wafer or a 12-inch wafer. The wafer 51 to be cut includes a front side and a back side relative to each other. The front side of the wafer 51 to be cut is provided with a circuit such as a device structure. The device structure includes but is not limited to at least one of a storage device, a power device and a sensor.

[0172] Continue reading Fig.19 As shown, the above step S202 is executed.

[0173] In step S202, an infrared light detection component 71 is used to detect the process of bonding the wafer 51 to be cut to the bonding area 111. The infrared light detection component 71 includes an infrared light emitter 72 and an infrared light receiver 73. The infrared light emitter 72 is located on the side of the dicing layer 21 away from the encapsulation layer 11. The infrared light receiver 73 is located on the side of the encapsulation layer 11 away from the dicing layer 21. The infrared light receiver 73 is used to receive the infrared light L1 emitted by the infrared light emitter 72. As mentioned above, when the infrared light L1 passes through the encapsulation layer 11, two sudden changes in transmittance occur, which automatically confirms that the wafer 51 to be cut is bonded to the bonding area 111 of the encapsulation layer 11, thereby improving the accuracy and yield of the encapsulation layer 11 being bonded to the back of the wafer 51 to be cut.

[0174] In step S202 , the back side of the wafer 51 to be cut is attached to the attaching area 111 of the packaging adhesive layer 11 to protect the back side of the wafer 51 to be cut.

[0175] After step S202, the semiconductor device packaging method further includes: step S203, that is, curing the packaging adhesive layer 11. The curing temperature is 125° C. to 135° C., and the time is 1 hour to 3 hours.

[0176] In some embodiments, see Fig. 20 As shown, after step S203, the semiconductor device packaging method further includes: step S204, that is, using infrared light L2 to detect whether there are defects inside the cut wafer.

[0177] In some embodiments, using infrared light to detect whether there are defects inside the cut wafer includes: The infrared light L2 emitted by the infrared light source 81 is used to irradiate the wafer 51 to be cut from the side of the dicing layer 21 away from the packaging glue layer 11; The infrared imager 82 is used to receive the infrared light reflected by the wafer 51 to be cut, and the image obtained based on the reflected infrared light L2 is used to determine whether there are defects inside the wafer 51 to be cut.

[0178] In some embodiments, the defect includes a crack. If there is no crack inside the wafer 51 to be cut, the subsequent steps are continued.

[0179] In some embodiments, the infrared light L2 may be the same as or different from the infrared light L1.

[0180] In some embodiments, the semiconductor device packaging method further includes: printing a mark on the back side of the wafer 51 to be cut. The mark may be printed on the back side of the wafer 51 to be cut by using a laser.

[0181] After the mark is printed on the back of the wafer 51 to be cut, the wafer 51 to be cut is cut, that is, the above step S205 is performed to obtain packaged semiconductor devices, and then the sorting operation is performed to screen the semiconductor devices attached with the packaging glue layer 11, that is, the packaged semiconductor chips.

[0182] The performance of the encapsulation adhesive layer of the embodiments of the present application is verified in combination with Examples 1 to 4 and Comparative Examples 1 to 2.

[0183] (1) The components of the encapsulation layer and the sources of the dicing layer in Table 1 are as follows: Phenoxy resin: Hongchang Electronic Materials Co., Ltd., brand 017ME. Mw of phenoxy resin is 35000 g / mol.

[0184] Phenolic F type epoxy resin: Shandong Deshang Chemical Co., Ltd., brand F44F48F51. The epoxy equivalent of phenolic F type epoxy resin is 220g / eq~240g / eq.

[0185] Phenol-type novolac epoxy resin: Shandong Pinshang New Materials Co., Ltd., brand NPPN-631. The epoxy equivalent of phenol-type novolac epoxy resin is 168g / eq~178g / eq.

[0186] Bisphenol A-modified epoxy resin, Shenzhen Bo Ming Han Electronics Co., Ltd., brand 187ME. The epoxy equivalent of bisphenol A-modified epoxy resin is 180g / eq~190g / eq.

[0187] Naphthol curing agent, Kenmet Materials Technology Co., Ltd., brand SN-395. The hydroxyl equivalent of the naphthol curing agent is 100g / eq~120g / eq.

[0188] Triphenylphosphine, spherical silica and carbon black are all commercially available. The D50 particle size of spherical silica is 0.5 micrometers. The primary particle size of carbon black is 20 nm.

[0189] The scribe layer is composed of a thermoplastic polyurethane layer and an antistatic adhesive layer. The antistatic adhesive layer is formed on the thermoplastic polyurethane layer by coating, and the thermoplastic polyurethane layer is purchased from Shanghai Hengning New Materials Co., Ltd.

[0190] (2) Thermal shrinkage test: Sample preparation: Take one sample of the dicing layer and the encapsulation adhesive layer (area 10cm*10cm), peel off the release film, spread it flat on a glass sheet with the adhesive side facing up, and punch holes at the four corners of the sample. The center of the hole is 1cm away from the edge and the hole diameter is 0.5cm*0.5cm.

[0191] Test method: After baking at 130℃ / 2h, measure the sample size before and after baking, and calculate the thermal shrinkage rate according to the formula: Thermal shrinkage rate = (distance before baking - distance after baking) / distance before baking * 100%.

[0192] (3) Transmittance test: Test equipment: Transmittance measuring instrument Sample preparation: An initial sample sheet (including a dicing layer and a packaging adhesive layer on the dicing layer) with an area of ​​about 400 mm×about 250 mm was cut, and then heated and cured at 130° C. for 2 hours to prepare a sample sheet.

[0193] Test method: Place the initial sample sheet and the corresponding sample on the transmittance measuring instrument respectively. Measure the transmittance of light in the wavelength range of 400nm to 1100nm, and take the maximum transmittance as the measured value.

[0194] (4) Image detection of the internal structure of the wafer to be cut: Test equipment: MX63L Olympus machine Sample preparation: an initial sample sheet (including a dicing layer and a packaging adhesive layer on the dicing layer) is provided, a chip is attached to the packaging adhesive layer of the initial sample sheet, and then heated and cured at 130° C. for 2 hours to prepare a sample sheet.

[0195] Test method: Place the sample on the test equipment and use infrared light with a wavelength of 900 nanometers to irradiate the chip to obtain an image of the chip's internal structure.

[0196] Table 1 Composition and test results of Examples 1 to 3 and Comparative Examples 1 to 3

[0197] In combination with Examples 1 to 4 and Comparative Examples 1 and 2, it can be seen that the compounding of phenolic F-type epoxy resin and bisphenol A-modified epoxy resin significantly reduces the difference in thermal shrinkage between the dicing layer and the encapsulation adhesive layer, thereby improving the transmittance of the cured encapsulation adhesive layer and the dicing layer to light with a wavelength of 400nm to 1100nm, especially the transmittance to infrared light with a wavelength of 900 nanometers, thereby improving the image clarity of the internal structure of the chip observed by infrared light.

[0198] Furthermore, in combination with Examples 1 to 2 and 4, it can be seen that within a certain range of the ratio of the phenolic F-type epoxy resin to the bisphenol A-modified epoxy resin, the laminate consisting of the encapsulation adhesive layer and the dicing layer before curing has a greater transmittance to light with a wavelength of 400nm to 1100nm. In addition, in combination with Examples 1 and 3, it can be seen that within a certain range of the mass percentage of carbon black, the laminate consisting of the encapsulation adhesive layer and the dicing layer before curing has a greater transmittance to light with a wavelength of 400nm to 1100nm.

[0199] The performance of the composite membrane of the embodiment of the present application is verified below in combination with specific examples 5 to 6 and comparative examples 3 to 5.

[0200] The requirements for the thickness of the film layer and the material requirements for the double-sided adhesive in the composite films of Examples 5 to 6 and Comparative Examples 3 to 5 are shown in Table 2. The following tests were performed on the Examples and Comparative Examples: ① The double-sided adhesive layer of the composite film in Examples 5 to 6 and Comparative Examples 3 to 4, and the antistatic adhesive layer of the composite film in Comparative Example 5 were attached to a deeply scratched iron frame to observe whether the edge of the double-sided adhesive layer or the antistatic layer was rolled up or fell off the iron frame; ② After the film is pasted, place it in an oven at 130°C for 2 hours to observe whether the edge of the double-sided adhesive layer or the antistatic layer is rolled up or falls off from the iron frame. The test results are shown in Table 3.

[0201] In Table 2 below, the release layer was purchased from Nan Ya Plastics; the encapsulation adhesive layer was designed using the components in Example 1. The dicing tape was purchased from the market, and the antistatic adhesive layer was formed on the dicing tape by coating. The double-sided adhesive layers of Example 5, Example 6, and Comparative Examples 3 to 4 were purchased from Hongfujiu Double-Sided Adhesive.

[0202] Table 2 Composition of the composite membranes of Examples 5 to 6 and Comparative Examples 3 to 5

[0203] Table 3 Test results of the composite films of Examples 5 to 6 and Comparative Examples 3 to 5

[0204] It can be seen from Table 2 and Table 3 that in the composite film of the embodiment of the present application, the choice of double-sided adhesive determines the operability of the composite film. In combination with Example 5 and Example 6 and Comparative Example 5, it can be seen that the addition of a double-sided adhesive film can improve the problem of partial detachment of the edge of the iron frame after operation. In combination with Example 5 and Example 6 and Comparative Examples 3 to Comparative Examples 4, it can be seen that the substrate layer of the double-sided adhesive exceeds a certain thickness or the substrate is ordinary PET, the double-sided adhesive is hard, and the edge of the double-sided adhesive on the iron frame will fall off after thermal curing. When the substrate layer of the double-sided adhesive adopts a thinner and high temperature resistant and low shrinkage PET, it can be operated normally and the double-sided adhesive layer will not fall off the iron frame after the encapsulation adhesive layer is thermally cured.

[0205] The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technical personnel in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A packaging adhesive layer, characterized in that: include: Fitting area; The fitting recognition area is adjacent to the fitting area and protrudes relative to the edge of the fitting area.

2. The encapsulation adhesive layer according to claim 1, characterized in that: The two fitting recognition areas are respectively located at opposite sides of the fitting area in the radial direction.

3. The encapsulation adhesive layer according to claim 1, characterized in that: The fitting and positioning area includes an arc-shaped edge.

4. The encapsulation adhesive layer according to claim 1, characterized in that: The packaging adhesive layer includes modified epoxy resin and curing agent; the modified epoxy resin includes bisphenol A epoxy resin and phenolic F type epoxy resin.

5. The encapsulation adhesive layer according to claim 4, characterized in that: The mass percentage of the modified epoxy resin in the encapsulation adhesive layer is 13% to 22%; and / or, The mass ratio of bisphenol A epoxy resin to novolac F epoxy resin is (10-14): (1-9); and / or, The epoxy equivalent of bisphenol A epoxy resin is 180g / eq~190g / eq, and the epoxy equivalent of phenolic F type epoxy resin is 220g / eq~240g / eq.

6. The encapsulation adhesive layer according to claim 4 or 5, characterized in that: The encapsulation adhesive layer further comprises phenoxy resin, and the mass ratio of the phenoxy resin to the modified epoxy resin is (8-12): (13-22); and / or, The weight average molecular weight of the phenoxy resin is 30000 g / mol to 40000 g / mol; and / or, The mass ratio of the curing agent to the modified epoxy resin is (16-20): (13-22); and / or, The curing agent includes a naphthol curing agent; The encapsulating adhesive layer further comprises a colorant, and the mass percentage of the colorant in the encapsulating adhesive layer is 0.05% to 0.25%; and / or, The colorant comprises carbon black; and / or, The particle size of the colorant is 10 nanometers to 25 nanometers; and / or, The encapsulation adhesive layer further comprises a curing accelerator, and the mass ratio of the curing agent to the curing accelerator is (16-20):1; and / or, The curing accelerator comprises a phosphine curing accelerator; and / or, The encapsulation adhesive layer further comprises a filler, and the mass percentage of the filler in the encapsulation adhesive layer is 48% to 55%; and / or, The particle size of the filler is 0.2 micrometer to 1 micrometer; and / or, The filler includes silica.

7. The encapsulation adhesive layer according to any one of claims 1 to 5, characterized in that: The heat shrinkage rate of the encapsulation adhesive layer when heated at 125°C to 135°C for 1 hour to 3 hours is 0.1% to 0.3%; The maximum transmittance of the encapsulation adhesive layer to light with a wavelength of 400nm to 1100nm is greater than or equal to 20%; and / or, The maximum transmittance of the cured encapsulation adhesive layer to light with a wavelength of 400nm to 1100nm is greater than or equal to 17.5%. The process parameters for curing the encapsulation adhesive layer include: a temperature of 125°C to 135°C and heating for 1 hour to 3 hours.

8. A composite membrane, characterized in that It comprises the encapsulation adhesive layer and the scribing layer as claimed in any one of claims 1 to 7, wherein the encapsulation adhesive layer is stacked on the scribing layer, and the orthographic projection of the encapsulation adhesive layer on the scribing layer is located in the scribing layer.

9. The composite membrane according to claim 8, characterized in that The composite film also includes a double-sided adhesive layer, which is stacked with the dicing layer. The double-sided adhesive layer is arranged around the bonding area, and there is a gap between the double-sided adhesive layer and the edge of the bonding area. The bonding recognition area is located in the gap.

10. The composite membrane according to claim 9, characterized in that The maximum transmittance of light with a wavelength of 400 nm to 1100 nm passing through the stack of the dicing layer and the encapsulation adhesive layer is greater than or equal to 20%; and / or, The maximum transmittance of light with a wavelength of 400nm to 1100nm passing through the stack of the scribe layer and the cured encapsulation adhesive layer is greater than or equal to 17.5%, and the process parameters for curing the encapsulation adhesive layer include: a temperature of 125°C to 135°C, and heating for 1 hour to 3 hours; and / or, The fitting recognition area partially overlaps with the double-sided adhesive layer; and / or, The thickness of the double-sided adhesive layer is 20um to 80um; and / or, The thermal shrinkage rate of the dicing layer when heated at 125° C. to 135° C. for 1 h to 3 h is HS1, the thermal shrinkage rate of the encapsulation adhesive layer when heated at 125° C. to 135° C. for 1 h to 3 h is HS2, and the absolute value of the difference between HS2 and HS1 is less than 0.2%; and / or, The thermal shrinkage rate of the dicing layer when heated at 125° C. to 135° C. for 1 h to 3 h is 0.1% to 0.15%, and the thermal shrinkage rate of the encapsulation adhesive layer when heated at 125° C. to 135° C. for 1 h to 3 h is 0.1% to 0.3%; and / or, The dicing layer comprises a dicing tape, and the dicing tape comprises a thermoplastic polyurethane layer; and / or, The dicing layer further includes an antistatic adhesive layer, and the antistatic adhesive layer is located between the dicing tape and the packaging adhesive layer.

11. A method for forming a composite film, characterized in that: include: Forming a packaging adhesive layer as claimed in any one of claims 1 to 7; forming a dicing layer; The packaging adhesive layer is laminated to the dicing layer.

12. The method for forming a composite film according to claim 11, characterized in that: Before laminating the encapsulation glue layer and the dicing layer, the method further includes: Forming a double-sided adhesive layer; The double-sided adhesive layer is bonded to the packaging adhesive layer, the double-sided adhesive layer is arranged around the packaging adhesive layer, there is a gap between the double-sided adhesive layer and the bonding area, the bonding recognition area is located in the gap and extends to overlap with the double-sided adhesive layer.

13. A method for packaging a semiconductor device, characterized in that: include: Providing a composite film as claimed in any one of claims 8 to 10 and a wafer to be cut; Bonding the wafer to be cut to the bonding area according to the bonding recognition area; The wafer to be cut and the packaging glue layer are cut to obtain a plurality of packaged semiconductor devices, wherein the packaged semiconductor devices include semiconductor devices and a packaging layer located on the semiconductor devices, the semiconductor devices are obtained by cutting the wafer to be cut, and the packaging layer is obtained by cutting the packaging glue layer.

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