Semiconductor device and preparation method thereof

Abstract

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a bearing substrate; the positioning structure and the electronic device are located on the surface of the same side of the bearing substrate; the electronic device comprises a first surface close to one side of the bearing substrate and a side surface in contact with the first surface; the positioning structure comprises at least one positioning protrusion, is located on the side, away from the center of the electronic device, of the side face and is used for limiting a setting area of the electronic device. The positioning structure and the electronic device are arranged on the surface of the same side of the bearing substrate, the positioning structure is arranged on at least one side of the electronic device, the position of the electronic device is fixed, the electronic device is prevented from moving, rapid, flexible and accurate positioning operation of the electronic device is achieved, and the working efficiency is improved. The problems that in the prior art, when an electronic device is positioned through a tool jig, the positioning precision of the electronic device is low, the machining time is long, and the positioning cost is high are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor device and a preparation method thereof. Background Art

[0002] In the original sintering manufacturing field, chips and components are positioned using jigs and fixtures. Chips, components and solder are fixed on the carrier substrate using jigs and fixtures, and then the components are assembled through the eutectic sintering furnace. Different positioning jigs need to be designed for different positions, which makes the processing difficult and the cost of jigs and fixtures remains high.

[0003] In addition, tooling is often machined, with tolerances often greater than 10μm, making it difficult to achieve high positioning accuracy within 10μm. Moreover, it often takes time from the design to the completion of tooling, making it impossible to achieve fast and flexible positioning of chips or components. Summary of the invention

[0004] The present invention provides a semiconductor device and a preparation method thereof, so as to solve the problems of low positioning accuracy and long processing time of electronic devices of the semiconductor device, and reduce the packaging cost at the same time.

[0005] According to one aspect of the present invention, there is provided a semiconductor device, comprising:

[0006] A carrier substrate;

[0007] The positioning structure and the electronic device are located on the same side surface of the carrier substrate; the electronic device includes a first surface close to the side of the carrier substrate, and a side surface in contact with the first surface; the positioning structure includes at least one positioning protrusion and is located on the side of the side away from the center of the electronic device, used to limit the setting area of ​​the electronic device.

[0008] Optionally, the semiconductor device further comprises a welding layer, wherein the welding layer is located between the carrier substrate and the electronic device;

[0009] The positioning structure includes a second surface away from the side of the carrier substrate, the welding layer includes a third surface away from the side of the carrier substrate, and the second surface is located on the side of the third surface away from the carrier substrate.

[0010] Optionally, the melting point of the positioning structure is greater than the melting point of the welding layer.

[0011] Optionally, the positioning structure includes at least one layer of positioning sub-parts, and the positioning sub-parts include at least one positioning protrusion arranged in the same layer;

[0012] Along the thickness direction of the carrier substrate, the height of the positioning structure is H1, and the thickness of the electronic device within the range defined by the positioning structure is H2, wherein 5%≤H1 / H2<100%.

[0013] Optionally, the positioning structure includes at least two layers of the positioning sub-parts, and the at least two layers of the positioning sub-parts are stacked in a thickness direction of the supporting substrate.

[0014] Optionally, the positioning structure is located at least on two opposite sides of the electronic device.

[0015] Optionally, the positioning structure surrounds the electronic device.

[0016] According to another aspect of the present invention, there is provided a method for preparing a semiconductor device, comprising:

[0017] providing a carrier substrate;

[0018] Preparing a positioning structure on the surface of the carrier substrate, wherein the positioning structure includes at least one positioning protrusion;

[0019] An electronic device is arranged on the surface of the carrier substrate and in a limited area of ​​the positioning structure; the electronic device includes a first surface close to one side of the carrier substrate and a side surface in contact with the first surface; the positioning structure is located on the side of the side surface away from the center of the electronic device.

[0020] Optionally, an electronic device is arranged on one side of the carrier substrate and in a limited area of ​​the positioning structure, including:

[0021] A welding layer is provided on one side of the carrier substrate and in a limited area of ​​the positioning structure;

[0022] An electronic device is arranged on a side of the welding layer away from the carrier substrate and in a limited area of ​​the limited structure;

[0023] The semiconductor device is heated to melt the soldering layer, and the electronic device is fixed on the carrier substrate through the soldering layer.

[0024] Optionally, preparing a positioning structure on one side of the carrier substrate includes:

[0025] Under the action of a preset potential signal, the spark rod under the capillary splitter of the bonding machine is controlled to generate an instantaneous voltage, and the tail portion of the metal wire is controlled to form a free air ball, and the free air is stuck in the inner diameter of the capillary splitter under the action of an air tensioner, and the material of the free air ball is the same as that of the positioning structure;

[0026] Controlling the capillary wedge to move toward the carrier substrate so that the free air ball contacts the carrier substrate; under preset conditions, the free air ball and the carrier substrate are bonded at a welding position;

[0027] The capillary cutter is controlled to move in a direction away from the carrier substrate to cut off the tail portion of the metal wire to form a positioning structure on one side of the carrier substrate.

[0028] The technical solution of the embodiment of the present invention is to arrange a positioning structure and an electronic device on the same side surface of a carrying substrate, and the positioning structure is arranged on at least one side of the electronic device to fix the position of the electronic device to prevent the electronic device from moving, thereby achieving fast, flexible and accurate positioning operations on the electronic device, and solving the problems of low positioning accuracy, long processing time and high positioning cost of electronic devices caused by positioning electronic devices by tooling and fixtures in the prior art.

[0029] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 is a schematic cross-sectional structural diagram of a first semiconductor device provided according to an embodiment of the present invention;

[0032] Figure 2 is a schematic cross-sectional structural diagram of a second semiconductor device provided according to an embodiment of the present invention;

[0033] Figure 3 is a schematic cross-sectional structural diagram of a third semiconductor device provided according to an embodiment of the present invention;

[0034] Figure 4 is a schematic top view of the structure of a fourth semiconductor device provided according to an embodiment of the present invention;

[0035] Figure 5 is a schematic top view of the structure of a fifth semiconductor device provided according to an embodiment of the present invention;

[0036] Figure 6 is a schematic top view of the structure of a sixth semiconductor device provided according to an embodiment of the present invention;

[0037] Figure 7 is a flow chart of a method for preparing a semiconductor device according to an embodiment of the present invention;

[0038] Figure 8 is a schematic diagram of a manufacturing process of a semiconductor device provided according to an embodiment of the present invention;

[0039] Fig. 9 According to an embodiment of the present invention, Figure 7 Detailed step flow chart of step S130;

[0040] Fig.10 is a schematic diagram of a preparation process of another semiconductor device provided according to an embodiment of the present invention;

[0041] Fig.11 According to an embodiment of the present invention, Figure 7 Detailed step flow chart of step S120;

[0042] Fig.12 It is a schematic diagram of a preparation process of another semiconductor device provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0043] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0044] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0045] Figure 1 A schematic diagram of a cross-sectional structure of a first semiconductor device provided by an embodiment of the present invention, referring to Figure 1The semiconductor device includes a carrier substrate 10, a positioning structure 11 and an electronic device 12. The positioning structure 11 and the electronic device 12 are located on the same side surface of the carrier substrate 10; the electronic device 12 includes a first surface close to the side of the carrier substrate 10, and a side surface in contact with the first surface; the positioning structure 11 includes at least one positioning protrusion 111 and is located on a side away from the center of the electrical device 12, and is used to define the setting area of ​​the electronic device 12.

[0046] Exemplarily, the carrier substrate 10 may include a welding substrate, a lead frame, a carrier or a tube shell. The carrier substrate 10 carries the positioning structure 11 and the electronic device 12. The embodiment of the present invention does not fix the type of the carrier substrate 10.

[0047] Exemplarily, the positioning structure 11 is a structure for fixing the position of the electronic device 12. Exemplarily, the positioning structure 11 can be a metal ball, for example, it can be at least one of a copper ball, a gold ball, a silver ball or an alloy ball. The embodiment of the present invention does not limit the specific material of the positioning structure 11. In addition, the positioning structure 11 is set as a metal ball, so that the setting method of the positioning structure is relatively flexible, for example, the position of the metal ball, the diameter of the metal ball and the height of the metal ball can be flexibly set to realize the positioning of electronic devices at different positions and electronic devices of different sizes.

[0048] Exemplarily, the electronic device 12 may be a chip or a component, and the component may include, for example, an active electronic component or a passive electronic component. The embodiment of the present invention also does not limit the specific type of the electronic device 12. In addition, the electronic device 12 may include a first surface and a side surface, and the first surface may be a side surface close to the carrier substrate 10, for example, the lower surface of the electronic device 12, such as the surface in contact with the carrier substrate 1 in the figure; the side surface is in contact with the first surface, such as the surface extending along the thickness direction of the semiconductor device in the figure.

[0049] Further, the positioning structure 11 may include at least one positioning protrusion 111, and the side surface (e.g., upper surface) of the positioning protrusion 111 away from the carrier substrate 10 is higher than the side surface (e.g., lower surface) of the electronic device 12 close to the carrier substrate 10, so that the positioning protrusion 111 can prevent the electronic device 12 from moving toward the positioning structure 11, or only slightly moving, thereby playing a role in limiting the position of the electronic device 12. In addition, the positioning structure 11 is located on the side of the electronic device 12 away from the center of the electronic device 12. Different from the metal ball structure in the prior art that plays a binding connection role and needs to be electrically connected to the electrodes provided on the upper surface or lower surface of the electronic device, the positioning structure 11 provided in the embodiment of the present invention surrounds the electronic device 12 from the side, does not contact the electronic device 12, or only contacts the side of the electronic device 12, that is, does not contact the electrodes in the electronic device 12, and there is no transmission of electrical signals between the electronic device and the electronic device. The positioning structure 11 provided in the embodiment of the present invention is only used to limit the position of the electronic device 12, and prevents the electronic device 12 from moving toward the positioning structure 11 or only slightly moving.

[0050] Furthermore, the positioning structure 11 is arranged on at least one side of the electronic device 12, for example, on one side or multiple sides of the electronic device 12, so that the electronic device 12 can be blocked from moving toward the positioning structure 11 from one side or multiple sides or only move slightly, thereby limiting the position of the electronic device 12 from at least one side.

[0051] Exemplarily, the positioning structure 11 can position the electronic device according to the shape of the electronic device 12. When the electronic device 12 is a regular polygonal structure, the positioning structure 11 can be set on one side of the electronic device 12, or on at least two sides of the electronic device 12 to position the electronic device 12; when the electronic device 12 is an irregular shaped structure, the positioning structure 11 can be set around the electronic device 12 to position the electronic device 12, and the shape of the electronic device 12 does not affect the positioning effect of the positioning structure 11. It can be understood that the above is only exemplarily explained by taking the electronic device 12 as a regular polygonal structure or an irregular shaped structure as an example, and in the embodiment of the present invention, the shape of the electronic device 12 and the setting method of the positioning structure 11 can be set according to actual needs, and the embodiment of the present invention does not specifically limit this.

[0052] The technical solution provided by the embodiment of the present invention is to set a positioning structure 11 and an electronic device 12 on the same side surface of the carrier substrate 10. The positioning structure 11 is set on at least one side of the electronic device 12 to fix the position of the electronic device 12 and prevent the electronic device 12 from moving. The positioning structure 11 can quickly and flexibly position the electronic device 12 to improve the positioning accuracy; and the setting position of the positioning structure 11 can match the shape of the electronic device 12. The setting method is flexible and can position electronic devices 12 of various shapes and specifications, with a wide range of applications; further, the electronic device positioning structure 11 can be implemented using an existing bonding machine without the need to add equipment, thereby reducing packaging costs.

[0053] Figure 2 A schematic diagram of a cross-sectional structure of a second semiconductor device provided in an embodiment of the present invention, referring to Figure 2 The semiconductor device also includes a welding layer 13, which is located between the carrier substrate 10 and the electronic device 12; the positioning structure 11 includes a second surface away from the side of the carrier substrate 10, the welding layer 13 includes a third surface away from the side of the carrier substrate, and the second surface is located on the side of the third surface away from the carrier substrate 10.

[0054] Illustratively, the semiconductor device provided by the embodiment of the present invention may further include a welding layer 13, and the welding layer 13 is used to weld and connect the electronic device 12 to the carrier substrate 10. Furthermore, the second surface (e.g., upper surface) of the positioning structure 11 away from the carrier substrate 10 is higher than the third surface (e.g., upper surface) of the welding layer 13 away from the carrier substrate 10, so that on the basis of ensuring that the positioning structure 11 can position and limit the welding layer 13, it can also be ensured that the positioning structure 11 has a positioning and limiting effect on the electronic device 12, and ensure that the welding layer 13 and the electronic device 12 can be positioned at the same time by the structure 11, thereby improving the positioning effect. It should be noted that the second surface is located on the side of the third surface away from the carrier substrate 10, and it can also be understood that when the positioning structure 11 and the welding layer 13 have the same bearing surface, the height of the positioning structure 11 is greater than the thickness of the welding layer 13.

[0055] Optionally, the melting point of the positioning structure 11 is greater than the melting point of the welding layer 13 .

[0056] Specifically, the melting point of the positioning structure 11 is greater than the melting point of the welding layer 13. It can be understood that when the electronic device 12 is welded to the surface of the carrier substrate 10 through the welding layer 13, the welding layer 13 preferentially forms a molten state so that the electronic device 12 can be connected to the carrier substrate 10 as a whole. At this time, the positioning structure 11 maintains a solid protruding state due to its high melting point, ensuring that the electronic device 12 can also be positioned during the welding process, avoiding the inability to position the electronic device 12 due to the melting of the positioning structure 11 due to its low melting point, and ensuring that the positioning structure 11 can provide a stable positioning effect.

[0057] Exemplarily, the material of the positioning structure 11 can be gold or copper. The sintering temperature of the currently commonly used welding layer 13 is about 300 degrees. The melting point of the positioning structure 11 is much greater than the melting point of the welding layer 13. During the welding process, the welding layer 13 welds the electronic device 12 and the carrier substrate 10 together. The melting point of the positioning structure 11 is relatively high, and it will not melt during the welding process to affect the positioning effect of the positioning structure 11.

[0058] Optionally, continue to refer to Figure 1 The positioning structure 11 includes at least one layer of positioning sub-sections, and the positioning sub-sections include at least one positioning protrusion 111 arranged in the same layer; along the thickness direction of the supporting substrate 10, the height of the positioning structure 11 is H1, and the thickness of the electronic device 12 located within the limited range of the positioning structure 11 is H2, wherein 5%≤H1 / H2<100%.

[0059] Specifically, the height H1 of the positioning structure 11 and the thickness H2 of the electronic device 12 satisfy 5%≤H1 / H2<100%, that is, the height of the positioning structure 11 is greater than or equal to 5% of the thickness of the electronic device 12, ensuring that the positioning structure 11 can position the electronic device 12; at the same time, the height of the positioning structure 11 is less than the thickness of the electronic device 12, and will not affect the performance of the electronic device 12 itself, for example, it will not affect the lead bonding on the side surface of the electronic device 12, and will not affect the wire bonding between the electronic device 12 and other structures.

[0060] It should be noted that when the semiconductor device includes a welding layer, and the welding layer is located between the carrier substrate and the electronic device, the thickness H2 of the electronic device can be understood as the sum of the thickness of the electronic device itself and the thickness of the welding layer, that is, the sum of the thicknesses of multiple devices that need to be positioned by the positioning structure 11. By limiting 5%≤H1 / H2<100%, it is ensured that the positioning structure can achieve the positioning effect of its limiting structure.

[0061] Further, the height H1 of the positioning structure 11 and the thickness H2 of the electronic device 12 satisfy 5%≤H1 / H2<100%, for example, H1 / H2=5%, or H1 / H2=12%, or H1 / H2=18%, or H1 / H2=25%, or H1 / H2=30%, or H1 / H2=37%, or H1 / H2=45%, or H1 / H2=52%, or H1 / H2=60%, or H1 / H2=68%, or H1 / H2=75%, or H1 / H2=85%, or H1 / H2=92%, or H1 / H2=99%. The embodiment of the present invention does not limit the specific ratio value between the height H1 of the positioning structure 11 and the thickness H2 of the electronic device 12, as long as the positioning structure 11 can realize the positioning effect on the electronic device 12 without affecting the performance of the electronic device 12 itself.

[0062] Exemplarily, as an optional implementation, the positioning structure 11 can be formed by bonding wires provided by a wire bonding machine, and the height of the positioning structure 11 can be above 5 μm, so that it can match the process of the wire bonding machine and reduce the difficulty of setting the positioning structure 11.

[0063] Figure 3 A schematic cross-sectional view of a third semiconductor device provided in an embodiment of the present invention, referring to Figure 3 The positioning structure 11 includes at least two layers of positioning sub-parts, and the at least two layers of positioning sub-parts are stacked in the thickness direction of the supporting substrate 10 (as shown in the X direction in the figure).

[0064] Specifically, when the electronic device 12 is relatively high, a positioning structure 11 may be provided including at least two layers of positioning sections. The multi-layered positioning structure 11 may ensure that the positioning structure 11 has a relatively high height, may well fix the position of the electronic device 12, and enhance the positioning effect of the positioning structure 11.

[0065] It should be noted that the embodiment of the present invention does not limit the number of layers of the positioning sub-units, and it can be set according to actual needs.

[0066] Figure 4 A schematic diagram of a top view of a fourth semiconductor device provided in an embodiment of the present invention, referring to Figure 4 The positioning structure 11 is at least located on two opposite sides of the electronic device 12 .

[0067] like Figure 4 As shown, along the Y direction, the positioning structure 11 is arranged on two opposite sides of the electronic device 12 (such as Figure 4The positioning structure 11 is arranged on both sides of the relative position of the electronic device 12, and the electronic device 12 can be positioned in at least one direction (the Y direction as shown in the figure), ensuring that the electronic device 12 will not move in at least one direction, or only move slightly, to ensure that the positioning structure 11 has a good positioning effect on the electronic device 12.

[0068] Figure 5 A schematic top view of the structure of a fifth semiconductor device provided by an embodiment of the present invention, Figure 6 A schematic diagram of a top view of a sixth semiconductor device provided in an embodiment of the present invention, referring to Figure 5 and Figure 6 , the positioning structure 11 surrounds the electronic device 12 .

[0069] Specifically, the positioning structure 11 surrounds the electronic device 12, that is, the positioning structure 11 is arranged on all four sides of the electronic device 12, so that the positioning structure 11 can position and limit the electronic device 12 from all directions, fully ensuring the positioning effect of the positioning structure 11, ensuring that the electronic device 12 is completely located at the preset position on the carrying substrate, and there will be no position offset or the position offset is very small, thereby ensuring the positioning accuracy of the electronic device 12.

[0070] For example, reference Figure 5 When multiple electronic devices 12 are closely arranged, the distance between the electronic devices 12 is small, and there is no need to set a positioning structure around each electronic device. The positioning structure 11 surrounds the combined area formed by the multiple electronic devices 12. There is no need to position each electronic device 12 separately. The combined structure formed by the multiple electronic devices 12 can be quickly and flexibly positioned accurately, thereby improving the positioning accuracy.

[0071] In other embodiments, reference Figure 6 When multiple electronic devices 12 are independently arranged, the distance between the electronic devices 12 is relatively large. The positioning structure 11 is arranged around each electronic device 12 to position all the electronic devices 12 separately, ensuring that each electronic device 12 will not move or will only slightly deviate, thereby improving the positioning accuracy of each electronic device 12.

[0072] Based on the same inventive concept, an embodiment of the present invention further provides a method for preparing a semiconductor device, specifically, Figure 7 A flow chart of a method for preparing a semiconductor device provided by an embodiment of the present invention, Figure 8 A schematic diagram of a semiconductor device manufacturing process provided by an embodiment of the present invention, referring to Figure 7 and Figure 8 , a method for preparing a semiconductor device comprises:

[0073] S110, providing a carrier substrate.

[0074] Exemplarily, the carrier substrate 10 may include a welding substrate, a lead frame, a carrier chip or a tube shell, and the carrier substrate 10 carries the positioning structure 11 and the electronic device 12 .

[0075] In one embodiment, if Figure 8 As shown in (a), a carrier substrate 10 is provided.

[0076] S120, preparing a positioning structure on the surface of the carrier substrate, wherein the positioning structure includes at least one positioning protrusion.

[0077] The positioning structure 11 is a structure for fixing the position of the electronic device 12. For example, the positioning structure 11 may be a metal ball, such as at least one of a copper ball, a gold ball, a silver ball or an alloy ball. The embodiment of the present invention does not limit the specific material of the positioning structure 11. The positioning structure 11 is arranged on the surface of the carrier substrate 10, and the positioning structure 11 is arranged around the setting area of ​​the electronic device 12 or on the boundary of the setting area to facilitate fixing the electronic device 12.

[0078] Furthermore, the positioning structure 11 may include at least one positioning protrusion 111, and a side surface (for example, an upper surface) of the positioning protrusion 111 away from the carrier substrate 10 is higher than a side surface (for example, a lower surface) of the electronic device 12 close to the carrier substrate 10. In this way, the positioning protrusion 111 can prevent the electronic device 12 from moving toward the positioning structure 11, or only cause a slight movement, thereby playing a role in limiting the position of the electronic device 12.

[0079] In one embodiment, if Figure 8 As shown in (b), a positioning structure 11 is prepared on the surface of the carrier substrate 10, and the positioning structure 11 includes at least one positioning protrusion 111.

[0080] S130, disposing electronic devices on the surface of the carrier substrate and in a limited area of ​​the positioning structure.

[0081] The potential device includes a first surface close to a side of the carrier substrate and a side surface connected to the first surface; the positioning structure is located on a side of the side surface away from the center of the electronic device.

[0082] The electronic device 12 may be a chip or a component. The component may include, for example, an active electronic component or a passive electronic component. The embodiment of the present invention also does not limit the specific type of the electronic device 12.

[0083] In one embodiment, if Figure 8As shown in (c), an electronic device 12 is arranged on the surface of the carrier substrate 10 and in the limited area of ​​the positioning structure 11. That is, the positioning structure 11 is located on the side of the electronic device 12, rather than on the upper surface or the lower surface of the electronic device 12.

[0084] The technical solution provided by the embodiment of the present invention is to set a positioning structure 11 and an electronic device 12 on the same side surface of the carrier substrate 10. The positioning structure 11 is set on at least one side of the electronic device 12 to fix the position of the electronic device 12 and prevent the electronic device 12 from moving. The positioning structure 11 can quickly and flexibly position the electronic device 12 to improve the positioning accuracy; and the setting position of the positioning structure 11 can match the shape of the electronic device 12. The setting method is flexible and can position electronic devices 12 of various shapes and specifications, with a wide range of applications; further, the electronic device positioning structure 11 can be implemented using an existing bonding machine without the need to add equipment, thereby reducing packaging costs.

[0085] Fig. 9 The embodiment of the present invention provides Figure 7 The detailed step flow chart of step S130, Fig.10 A schematic diagram of another semiconductor device manufacturing process provided by an embodiment of the present invention, referring to Figure 7 , Fig. 9 and Fig.10 , the above step S130 includes:

[0086] S131, a welding layer is provided on one side of the carrier substrate and in a limited area of ​​the positioning structure.

[0087] The limited area of ​​the positioning structure 11 is the position area of ​​the electronic device 12 set according to the shape and size of the electronic device 12. The welding layer 13 is set in the limited area of ​​the positioning structure 11 to facilitate the welding layer 13 to weld the electronic device to the carrier substrate 10.

[0088] In one embodiment, if Fig.10 As shown in (c1), a welding layer 13 is provided on one side of the carrier substrate 10 and in a limited area of ​​the positioning structure 11.

[0089] Furthermore, the height of the positioning structure 11 is greater than the thickness of the welding layer 13, that is, the side surface (for example, the upper surface) of the positioning structure 11 away from the carrier substrate 10 is higher than the side surface (for example, the upper surface) of the welding layer 13 away from the carrier substrate 10. In this way, on the basis of ensuring that the positioning structure 11 can position and limit the welding layer 13, it can also ensure that the positioning structure 11 has a positioning and limiting effect on the electronic device, ensuring that the structure 11 can simultaneously position the welding layer 13 and the electronic device 12, thereby improving the positioning effect.

[0090] S132, disposing an electronic device on a side of the welding layer away from the carrier substrate and within a limited area of ​​the limited structure.

[0091] The welding layer 13 is disposed between the electronic device 12 and the carrier substrate 10 , and the welding layer 13 covers a surface of the electronic device 12 on one side close to the carrier substrate 10 .

[0092] In one embodiment, if Fig.10 As shown in (c2), the electronic device 12 is arranged on the side of the welding layer 13 away from the carrier substrate 10 and in the limited area of ​​the limited structure.

[0093] S133, heating the semiconductor device to melt the soldering layer, and fixing the electronic device on the carrier substrate through the soldering layer.

[0094] The semiconductor device is heated to the melting point of the welding layer 13, and the welding layer melts to cover the surface of the electronic device 12 on one side close to the carrier substrate. The welding layer 13 is then cooled and solidified, and the electronic device 12 is fixed on the carrier substrate 10 through the welding layer 13.

[0095] Furthermore, the melting point of the positioning structure 11 is greater than the melting point of the welding layer 13. When the welding layer 13 welds the electronic device 12 to the surface of the carrier substrate 10, the welding layer 13 preferentially forms a molten state so that the electronic device 12 can be connected to the carrier substrate 10 as a whole. At this time, the positioning structure 11 maintains a solid protruding state due to its high melting point, ensuring that the electronic device 12 can also be positioned during the welding process, avoiding the inability to position the electronic device 12 due to the melting of the positioning structure 11 due to its low melting point, and ensuring that the positioning structure 11 can provide a stable positioning effect.

[0096] In one embodiment, if Fig.10 As shown in (c3), the semiconductor device is heated to melt the solder layer 13, and the electronic device 11 is fixed on the carrier substrate 10 through the solder layer 13.

[0097] The technical solution provided by the embodiment of the present invention is to set a welding layer in the limited area of ​​the positioning structure, and the welding layer is melted to fix the electronic device on the carrier substrate.

[0098] Fig.11 The embodiment of the present invention provides Figure 7 The detailed step flow chart of step S120, Fig.12 is a schematic diagram of a manufacturing process of another semiconductor device provided according to an embodiment of the present invention, referring to Figure 7 , Fig.11 and Fig.12 , the above step S120 includes:

[0099] S121. Under the action of a preset potential signal, the spark rod below the capillary splitter of the bonding machine is controlled to generate an instantaneous voltage, and the tail portion of the metal wire is controlled to form a free air ball.

[0100] The material of the free air ball 112 is the same as that of the positioning structure 11, the preset potential signal is an electronic spark discharge signal, and the free air ball 112 is a small ball formed after the metal wire is melted. The bonding machine includes a bonding wire, and the spark rod under the capillary splitter of the wire bonding machine generates an electronic spark discharge signal. The bonding wire generates local high temperature due to the tip discharge, and the tail part of the wire becomes molten. Under the combined action of gravity and surface tension, the free air ball 112 is formed. The free air ball 112 is stuck in the inner diameter of the capillary splitter of the bonding machine under the action of the air tensioner. The free air ball 112 is formed by high-pressure sintering wire, which can ensure that the free air ball 112 has good consistency, and thus ensure that the final positioning structure has good consistency.

[0101] Exemplarily, the diameter of the bonding wire may be 15-50 μm, the wire may be gold wire, copper wire, silver wire or gold wire, and the diameter of the formed free air ball 112 may be 1.5-5 times the diameter of the wire.

[0102] In one embodiment, if Fig.12 As shown in (b1), under the action of the preset potential signal, the spark rod below the capillary cutter of the bonding machine is controlled to generate an instantaneous voltage, and the tail part of the metal wire is controlled to form a free air ball 112.

[0103] S122, controlling the capillary to move toward the carrier substrate so that the free air ball contacts the carrier substrate; under preset conditions, the free air ball and the carrier substrate are bonded at the welding position.

[0104] When the capillary cutter moves toward the carrier substrate 10 to a preset position of the electronic device 12 on the surface of the carrier substrate 10 , the free air ball 112 and the metal on the surface of the carrier substrate 10 reach a molten state and bond under the action of ultrasound, temperature and force, forming a positioning structure 11 on one side of the carrier substrate 10 .

[0105] In one embodiment, if Fig.12 As shown in (b2), the capillary cutter is controlled to move toward the carrier substrate 10 so that the free air ball contacts the carrier substrate 10, and the free air ball is bonded to the carrier substrate to form a positioning structure 11 on one side of the carrier substrate 10.

[0106] S123, controlling the capillary cutter to move away from the carrier substrate to cut off the tail portion of the metal wire to form a positioning structure on one side of the carrier substrate.

[0107] The capillary cutter moves away from the carrier substrate 10 , and the capillary cutter is controlled to cut off the tail portion of the metal wire, and the free air ball 112 is welded to the carrier substrate 10 to form the positioning structure 11 .

[0108] In one embodiment, if Fig.12 As shown in (b3), the capillary cutter is controlled to move away from the carrier substrate 10 to cut off the tail portion of the metal wire.

[0109] The technical solution provided by the embodiment of the present invention uses a capillary cutter of a bonding machine to form a metal lead into a free air ball, and the free air ball is bonded to the surface of a carrier substrate to form a positioning structure with good consistency.

[0110] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0111] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor device, characterized in that: include: A carrier substrate; The positioning structure and the electronic device are located on the same side surface of the carrier substrate; the electronic device includes a first surface close to the side of the carrier substrate, and a side surface in contact with the first surface; the positioning structure includes at least one positioning protrusion and is located on the side of the side away from the center of the electronic device, used to limit the setting area of ​​the electronic device.

2. The semiconductor device according to claim 1, wherein: The semiconductor device further comprises a welding layer, wherein the welding layer is located between the carrier substrate and the electronic device; The positioning structure includes a second surface away from the side of the carrier substrate, the welding layer includes a third surface away from the side of the carrier substrate, and the second surface is located on the side of the third surface away from the carrier substrate.

3. The semiconductor device according to claim 2, characterized in that The melting point of the positioning structure is greater than the melting point of the welding layer.

4. The semiconductor device according to claim 1, wherein: The positioning structure comprises at least one layer of positioning sub-parts, and the positioning sub-parts comprise at least one positioning protrusion arranged in the same layer; Along the thickness direction of the carrier substrate, the height of the positioning structure is H1, and the thickness of the electronic device within the range defined by the positioning structure is H2, wherein 5%≤H1 / H2<100%.

5. The semiconductor device according to claim 4, characterized in that The positioning structure includes at least two layers of positioning sub-parts, and the at least two layers of positioning sub-parts are stacked in the thickness direction of the supporting substrate.

6. The semiconductor device according to claim 1, wherein: The positioning structure is at least located on two opposite sides of the electronic device.

7. The semiconductor device according to claim 6, characterized in that The positioning structure surrounds the electronic device.

8. A method for preparing a semiconductor device, characterized in that: include: providing a carrier substrate; Preparing a positioning structure on the surface of the carrier substrate, wherein the positioning structure includes at least one positioning protrusion; An electronic device is arranged on the surface of the carrier substrate and in a limited area of ​​the positioning structure; the electronic device includes a first surface close to one side of the carrier substrate and a side surface in contact with the first surface; the positioning structure is located on the side of the side surface away from the center of the electronic device.

9. The preparation method according to claim 8, characterized in that: An electronic device is arranged on one side of the carrier substrate and in a limited area of ​​the positioning structure, including: A welding layer is provided on one side of the carrier substrate and in a limited area of ​​the positioning structure; An electronic device is arranged on a side of the welding layer away from the carrier substrate and in a limited area of ​​the limited structure; The semiconductor device is heated to melt the soldering layer, and the electronic device is fixed on the carrier substrate through the soldering layer.

10. The preparation method according to claim 8, characterized in that: A positioning structure is prepared on one side of the carrier substrate, comprising: Under the action of a preset potential signal, the spark rod under the capillary splitter of the bonding machine is controlled to generate an instantaneous voltage, and the tail portion of the metal wire is controlled to form a free air ball, and the free air is stuck in the inner diameter of the capillary splitter under the action of an air tensioner, and the material of the free air ball is the same as that of the positioning structure; Controlling the capillary wedge to move toward the carrier substrate so that the free air ball contacts the carrier substrate; under preset conditions, the free air ball and the carrier substrate are bonded at a welding position; The capillary cutter is controlled to move in a direction away from the carrier substrate to cut off the tail portion of the metal wire to form a positioning structure on one side of the carrier substrate.

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