Semiconductor device

Abstract

A semiconductor device includes a semiconductor chip having a semiconductor integrated circuit. At least a portion of the cooling channel is formed in the semiconductor chip. The first capillary core structure may be disposed on a bottom of the cooling channel that is parallel to an upper surface of the semiconductor chip in a lateral direction. The first capillary wick structure may move the liquid coolant in a lateral direction along the bottom of the cooling channel by capillary action. A second capillary wick structure may be disposed along the inner surface of the steam chamber and may move the liquid coolant along the inner surface of the steam chamber by capillary action.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a semiconductor device having a two-phase liquid cooling structure. Background Art

[0002] Air cooling devices have been widely used to dissipate heat generated from electronic devices. However, as the power density of electronic devices has gradually increased, the use of liquid cooling devices to handle large amounts of heat has also increased. In addition, in order to reduce power consumption in data centers, interest in next-generation high-efficiency cooling systems such as liquid cooling devices is gradually increasing. Based on the temperature range of heat-generating components, liquid cooling methods can be classified into a single-phase liquid cooling type that does not involve a phase change of the coolant and a two-phase liquid cooling type that involves a phase change of the coolant. The two-phase liquid cooling method can be used to handle heat over a wider range than the single-phase liquid cooling method. Summary of the invention

[0003] Embodiments of the present disclosure include a semiconductor device employing a two-phase liquid cooling structure.

[0004] Embodiments of the present disclosure include a semiconductor device including a vapor chamber having an enlarged heat transfer surface.

[0005] Embodiments of the present disclosure include a semiconductor device that employs a two-phase liquid cooling structure to address the reduction in cooling efficiency caused by adsorption of bubbles on a heat generating surface.

[0006] Embodiments of the present disclosure include semiconductor devices that do not require additional power to move cooling fluid.

[0007] According to an embodiment of the present disclosure, a semiconductor device is provided, which includes: a semiconductor chip, including a cooling channel recessed in the semiconductor chip from the upper surface of the semiconductor chip, the cooling channel being configured to have a liquid coolant flow therein so as to absorb heat generated during operation of the semiconductor chip; a first capillary wick structure on the bottom of the cooling channel, the bottom being parallel to the upper surface of the semiconductor chip in a lateral direction, the first capillary wick structure being configured to move the liquid coolant in the lateral direction along the bottom of the cooling channel by capillary action; a vapor chamber above the semiconductor chip and in fluid communication with the cooling channel; a second capillary wick structure on the inner surface of the vapor chamber and configured to move the liquid coolant along the inner surface of the vapor chamber by capillary action; and a third capillary wick structure between the first capillary wick structure and the second capillary wick structure and configured to move the liquid coolant from the second capillary wick structure to the first capillary wick structure by capillary action.

[0008] According to one or more embodiments of the present disclosure, the first capillary wick structure includes a material different from a material included in the second capillary wick structure.

[0009] According to one or more embodiments of the present disclosure, the first capillary wick structure includes silicon, and the second capillary wick structure includes copper.

[0010] According to one or more embodiments of the present disclosure, the third capillary wick structure includes copper.

[0011] According to one or more embodiments of the present disclosure, the third capillary wick structure connects some first capillary wick structures closest to the step formed between the steam chamber and the upper surface of the semiconductor chip and some second capillary wick structures closest to the step, and the third capillary wick structure is separated from the step by a capillary distance toward the interior of the cooling channel.

[0012] According to one or more embodiments of the present disclosure, the third capillary wick structure has a conductive wire shape extending between an upper surface of the first capillary wick structure and an upper surface of the second capillary wick structure.

[0013] According to one or more embodiments of the present disclosure, the third capillary wick structure includes: a first vertical capillary channel configured to move the liquid coolant in a vertical direction between adjacent third capillary wick structures; and a second vertical capillary channel configured to move the liquid coolant in a vertical direction between the step and the third capillary wick structure.

[0014] According to one or more embodiments of the present disclosure, the semiconductor device further includes a fourth capillary wick structure connecting together at least some of the first capillary wick structures and at least some of the second capillary wick structures facing each other.

[0015] According to one or more embodiments of the present disclosure, the fourth capillary wick structure has a conductive line shape extending between an upper surface of the first capillary wick structure and an upper surface of the second capillary wick structure.

[0016] According to one or more embodiments of the present disclosure, the semiconductor device further includes a packaging case surrounding the semiconductor chip, wherein an upper surface of the semiconductor chip is exposed from the packaging case, wherein the vapor chamber is on an upper portion of the packaging case.

[0017] According to one or more embodiments of the present disclosure, the second capillary wick structure includes: a 2-1 capillary wick structure, a portion of which faces the first capillary wick structure; a 2-2 capillary wick structure, facing another portion of the 2-1 capillary wick structure; and a 2-3 capillary wick structure between the 2-1 capillary wick structure and the 2-2 capillary wick structure.

[0018] According to one or more embodiments of the present disclosure, the semiconductor device further includes an additional semiconductor chip below the 2-2 capillary wick structure and within the packaging housing.

[0019] According to an embodiment of the present disclosure, a semiconductor device is provided, which includes: a plurality of semiconductor chips stacked in a vertical direction, the plurality of semiconductor chips including a plurality of cooling channels respectively recessed from the upper surfaces of the plurality of semiconductor chips in the plurality of semiconductor chips, the plurality of cooling channels being configured to have a coolant flow in a liquid phase therein so as to absorb heat generated during operation of the plurality of semiconductor chips; a plurality of first capillary wick structures respectively on the bottom of the plurality of cooling channels, the bottom of the plurality of cooling channels being respectively parallel to the upper surfaces of the plurality of semiconductor chips in a lateral direction, the plurality of first capillary wick structures being configured to move the coolant in a lateral direction along the bottom of the plurality of cooling channels by capillary action; and a vapor chamber on the topmost semiconductor chip among the plurality of semiconductor chips. the vapor chamber being fluidly connected to the plurality of cooling channels; a second capillary wick structure on the inner surface of the vapor chamber and configured to move a coolant along the inner surface of the vapor chamber by capillary action; a connecting channel passing through the other semiconductor chips except the bottommost semiconductor chip among the plurality of semiconductor chips; a third capillary wick structure between the second capillary wick structure and a first capillary wick structure arranged on the topmost semiconductor chip among the plurality of semiconductor chips among the plurality of first capillary wick structures, the third capillary wick structure being configured to move a coolant in a liquid phase from the second capillary wick structure to the first capillary wick structure by capillary action; and at least one fourth capillary wick structure configured to move a coolant in a liquid phase from the second capillary wick structure along the connecting channel to at least one of the plurality of first capillary wick structures by capillary action.

[0020] According to one or more embodiments of the present disclosure, the plurality of first capillary wick structures include a material different from a material included in the second capillary wick structures.

[0021] According to one or more embodiments of the present disclosure, the plurality of first capillary wick structures include silicon, and the second capillary wick structure includes copper.

[0022] According to one or more embodiments of the present disclosure, the third capillary wick structure and the at least one fourth capillary wick structure include copper.

[0023] According to one or more embodiments of the present disclosure, a third capillary wick structure connects together some first capillary wick structures closest to a step formed between the steam chamber and the upper surface of the plurality of semiconductor chips and some second capillary wick structures closest to the step, and wherein the third capillary wick structure is spaced apart from the step by a capillary distance toward the interior of the plurality of cooling channels.

[0024] According to one or more embodiments of the present disclosure, the at least one fourth capillary wick structure includes a fourth capillary wick structure spaced apart from a side wall of the connecting channel by a capillary distance toward the inside of the plurality of cooling channels.

[0025] According to one or more embodiments of the present disclosure, the semiconductor device also includes a fifth capillary wick structure that connects some of the first capillary wick structures and some of the second capillary wick structures facing each other, wherein the some of the first capillary wick structures are on the topmost semiconductor chip among the multiple semiconductor chips.

[0026] According to one or more embodiments of the present disclosure, the semiconductor device also includes a plurality of packaging shells respectively surrounding the plurality of semiconductor chips, wherein the upper surfaces of the plurality of semiconductor chips are respectively exposed from the plurality of packaging shells, and the steam chamber is on the upper part of a packaging shell surrounding the topmost semiconductor chip among the plurality of semiconductor chips among the plurality of packaging shells.

[0027] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of example embodiments of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0029] Figure 1 is a view schematically showing a configuration of a semiconductor device according to an embodiment;

[0030] Figure 2 It is shown Figure 1 An enlarged view of region A;

[0031] Figure 3 is a partial view schematically showing a configuration of a semiconductor device according to an embodiment;

[0032] Figure 4 is a partial perspective view schematically showing a configuration of a semiconductor device according to an embodiment;

[0033] Figure 5is a plan view schematically showing a cooling channel and a first capillary wick structure according to an embodiment;

[0034] Figure 6 is a cross-sectional view schematically showing a cooling channel and a third capillary wick structure according to an embodiment;

[0035] Figure 7 is a view schematically showing a configuration of a semiconductor device according to an embodiment;

[0036] Figure 8 It is shown Figure 7 An enlarged view of region B;

[0037] Fig. 9 is a view schematically showing a configuration of a semiconductor device according to an embodiment; and

[0038] Fig.10 is a view schematically showing a configuration of a semiconductor device according to an embodiment. DETAILED DESCRIPTION

[0039] Now will refer to the embodiment in detail, examples of which are shown in the accompanying drawings, wherein the same reference numerals always represent the same elements. In this respect, the embodiments of the present disclosure may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the following only describes example embodiments to explain the example aspects of the present disclosure by referring to the accompanying drawings. As used herein, the term "and / or" includes any and all combinations of one or more associated listed items. Statements such as "at least one of ..." modify the entire column of elements when following a column of elements, rather than modifying the individual elements in the list.

[0040] In the accompanying drawings, for the clarity of the illustration, the size of the element may be enlarged. In the following description, when an element is referred to as "above" or "on" another element, it can directly contact with the other element on the upper side, lower side, left side or right side of the other element at the same time, or can contact with the other element on the upper side, lower side, left side or right side of the other element. Unless otherwise specified, the term in the singular form can include the plural form. It will also be understood that the term "include" and / or "comprising" used here specifies the existence of the feature or element, but does not exclude the existence or addition of one or more other features or elements. The element mentioned with the definite article or indicative determiner can be interpreted as one element or multiple elements, even if it has a singular form. The operation of the method can be performed in an appropriate order, unless clearly described or described in contrast in terms of order, and is not limited to the order in which it is set forth. In the present disclosure, terms such as "unit" or "module" can be used to represent a unit having at least one function or operation and implemented with hardware, software, or a combination of hardware and software. In addition, the line connections or connecting members between the elements drawn in the drawings represent functional connections and / or physical or circuit connections by way of example, and in practical applications, they can be replaced or embodied with various additional functional connections, physical connections or circuit connections. Examples and terms are used here only to describe exemplary technical ideas and should not be considered to limit the purpose of the present disclosure.

[0041] An effective cooling system is needed to solve the cooling problem that limits the performance of electronic devices including semiconductor chips. In the field of high performance computing (HPC) and semiconductor devices including stacked three-dimensional (3D) semiconductor chips, a cooling system is needed to handle the increase in power density and the increase in heat generated by highly integrated circuits. To this end, a two-phase liquid cooling system capable of utilizing the latent heat of evaporation of a coolant can be applied to semiconductor devices. Examples of two-phase liquid cooling methods include immersion cooling, spray cooling, and jet impingement cooling.

[0042] Immersion cooling is a method of cooling electronic devices by immersing them in a bath containing a liquid coolant. Although immersion cooling is the most widely used, immersion cooling is limited to the use of dielectric coolants because the electronic devices are immersed in the liquid coolant. Therefore, immersion cooling incurs high maintenance costs and is not environmentally friendly. In addition, the cooling efficiency may be reduced due to coolant vapor bubbles adsorbed on the heat-generating surfaces of the electronic devices. In the boiling diagram, this phenomenon is called "critical heat flux (CHF)". The increase in CHF ensures cooling for higher heat fluxes.

[0043] Spray cooling is a method of atomizing a liquid coolant and spraying the atomized liquid coolant on a heat generating surface. Spray cooling ensures high cooling efficiency compared to the amount of liquid coolant used. However, the spray cooling device requires a pumping device capable of operating at a high pressure, and the nozzle requires regular maintenance and repair. In addition, when a film boiling phenomenon occurs in which gaseous coolant bubbles are adsorbed on a heat generating surface, the bubbles hinder heat transfer from the heat generating surface to the coolant, thereby reducing the cooling efficiency.

[0044] Jet impingement cooling is a method of spraying liquid coolant at high velocity onto a heat-generating surface. Although jet impingement cooling guarantees high cooling efficiency like spray cooling, jet impingement cooling requires multiple ejectors to uniformly cool the heat-generating surface. In addition, blind spots may occur even when multiple ejectors are used.

[0045] In the two-phase liquid cooling system of the embodiment of the present disclosure, at least a portion of the cooling channel used as a coolant passage is formed inside the object to be cooled. In other words, the cooling channel can be completely formed in the object to be cooled by recessing the surface (e.g., upper surface) of the object. The object to be cooled can be, for example, a semiconductor chip (e.g., an integrated circuit die). The cross-sectional area of ​​the cooling channel may include: a liquid channel area, provided with a fine pattern, the fine pattern is configured to generate a capillary force so that the liquid coolant can flow in the liquid channel area; and a vapor channel area, not provided with a capillary structure, so that the vapor coolant can flow in the vapor channel area. The liquid channel area and the vapor channel area are not physically separated from each other and are distinguished from each other based on the fine pattern. In the liquid channel area, the coolant absorbs heat from the heat-generating surface adjacent to the heat source and turns into vapor. According to an embodiment of the present disclosure, vapor (e.g., bubbles) generated in the liquid channel area can move to the vapor channel area and can escape to the outside of the cooling channel along the vapor channel area. The liquid coolant is filled in a portion of the liquid channel area, and the bubbles are discharged from the portion of the liquid channel area by the capillary force generated by the capillary wick structure. According to this configuration, since bubbles are easily separated from the heat-generating surface, the cooling efficiency can be improved, and the formation of hot spots can be reduced or prevented. In addition, the fine pattern increases the area where heat exchange occurs with the liquid coolant, thereby promoting heat exchange with the heat source. In addition, since the liquid coolant flows along the liquid channel area by capillary force, a coolant supply device (such as a large-capacity pump) for supplying liquid coolant to the cooling channel is not required, thereby reducing the manufacturing cost and power consumption of the two-phase liquid cooling system.

[0046] In the following description, direction X refers to one of the directions parallel to the upper surface of the semiconductor chip. Direction Z refers to the thickness direction of the semiconductor chip. Direction Y refers to a direction orthogonal to direction X among the directions parallel to the upper surface of the semiconductor chip.

[0047] Figure 1 is a view schematically showing a configuration of a semiconductor device 1 according to an embodiment. Figure 2 It is shown Figure 1 Magnified view of area A. Figure 3 is a partial view schematically showing the configuration of a semiconductor device 1 according to an embodiment.

[0048] Reference Figures 1 to 3 According to an embodiment, the semiconductor device 1 may include a semiconductor chip 100, a cooling channel 10, a steam chamber 200 for dissipating heat generated from the semiconductor chip 100, a package housing 700, and a printed circuit board 1000. The semiconductor chip 100 may include a substrate 110 and a semiconductor integrated circuit 120 formed on a surface of the substrate 110. Examples of the semiconductor chip 100 may include various semiconductor integrated circuit chips. For example, the semiconductor chip 100 may include a memory chip including a memory integrated circuit or a logic chip including a logic integrated circuit, a central processing unit (CPU) chip, a graphics processing unit (GPU) chip, or an application-specific integrated circuit (ASIC) chip. When the semiconductor chip 100 is a wafer-level semiconductor integrated circuit chip, the semiconductor device 1 may have a small form factor.

[0049] The substrate 110 may be a wafer. The semiconductor chip 100 may be mounted on the printed circuit board 1000 using, for example, solder balls S. A wiring layer may be provided on the lower surface of the semiconductor chip 100 to electrically connect the semiconductor integrated circuit 120 and the printed circuit board 1000 to each other. The wiring layer may be electrically passivated relative to the outside. The semiconductor chip 100 may be referred to as an integrated circuit die, and the semiconductor device 1 including the integrated circuit die may be referred to as an integrated circuit device.

[0050] The cooling channel 10 may be provided in a region of the semiconductor chip 100 to absorb heat generated when the semiconductor chip 100 operates. According to an embodiment, at least a portion of the cooling channel 10 may be formed inside the semiconductor chip 100, for example, inside the substrate 110. In other words, the cooling channel 10 may be provided in the semiconductor chip 100 as a whole. For example, the cooling channel 10 may be recessed in the substrate 110 from the upper surface 112 of the substrate 110.

[0051] According to one embodiment, the cooling channel 10 may include a liquid coolant passage 11 (also referred to as a "liquid channel region") through which the liquid coolant LC flows and a vapor coolant passage 12 (also referred to as a "vapor channel region") through which the vapor coolant VC flows. The liquid coolant passage 11 may be provided in the semiconductor chip 100. For example, the liquid coolant passage 11 may be recessed in the substrate 110 from the upper surface 112 of the substrate 110. In addition, the vapor coolant passage 12 may be communicated with a vapor chamber 200 (described later). Therefore, a two-phase liquid cooling system may be implemented.

[0052] In the semiconductor device 1 of this embodiment, a cooling channel 10 is formed in the semiconductor chip 100, and the cooling channel 10 includes a liquid coolant passage 11 in which a liquid coolant LC flows and a vapor coolant passage 12 in which a vapor coolant VC flows, which is connected to the liquid coolant passage 11. That is, the cross-sectional area of ​​the cooling channel 10 may include the liquid coolant passage 11 and the vapor coolant passage 12. The liquid coolant LC may flow along the liquid coolant passage 11 to dissipate the heat generated from the semiconductor chip 100.

[0053] The first capillary wick structure 310 may move the liquid coolant LC contained in the cooling channel 10 in one direction by capillary action. For example, the first capillary wick structure 310 is arranged on the bottom of the cooling channel 10, which is parallel to the upper surface 112 of the semiconductor chip 100 in the lateral direction (direction X). For example, the first capillary wick structure 310 may be arranged on the bottom 1110 of the liquid coolant passage 11. Therefore, the liquid coolant LC introduced into the liquid coolant passage 11 may flow in the lateral direction (direction X) parallel to the upper surface 112 of the semiconductor chip 100.

[0054] According to an embodiment, the first capillary wick structure 310 may be formed on the semiconductor chip 100, for example, on the substrate 110 of the semiconductor chip 100. The substrate 110 is a wafer on which the semiconductor integrated circuit 120 is formed by a semiconductor process. The semiconductor integrated circuit 120 may be formed on a surface (for example, a lower surface or an active surface) of the substrate 110 by a semiconductor process, and then the cooling channel 10 may be formed by recessing another surface (for example, an upper surface 112 or an inactive surface) of the substrate 110 by a semiconductor process (such as an etching process).

[0055] According to an embodiment, the first capillary wick structure 310 may be formed on at least a portion of the wall surface of the cooling channel 10 by a semiconductor process such as an etching process or a laser ablation process. Therefore, the first capillary wick structure 310 may be formed integrally with the substrate 110. For example, when the first capillary wick structure 310 is formed integrally with the substrate 110, the first capillary wick structure 310 and the substrate 110 may include the same material, such as silicon.

[0056] As described above, the first capillary wick structure 310 can be formed during the manufacturing process of the semiconductor chip 100, and therefore, the semiconductor device 1 having the cooling structure can be easily manufactured. However, the embodiment is not limited thereto, and the first capillary wick structure 310 can be formed separately from the substrate 110 and then attached to the substrate 110. An example shape of the first capillary wick structure 310 is described below.

[0057] According to one embodiment, the liquid coolant LC contained in the cooling channel 10 may flow along the liquid coolant passage 11 due to the capillary force generated by the first capillary wick structure 310. The liquid coolant LC contained in the liquid coolant passage 11 may absorb heat from a heat source of the semiconductor chip 100 (e.g., the semiconductor integrated circuit 120 of the semiconductor chip 100) and may evaporate to become a vapor coolant VC. The vapor coolant VC may move from the liquid coolant passage 11 to the vapor coolant passage 12. The space of the liquid coolant passage 11 from which the vapor coolant VC escapes is filled with the liquid coolant LC by capillary force. The vapor coolant VC moves along the vapor coolant passage 12 into the vapor chamber 200. The vapor coolant VC may be transformed into the liquid coolant LC in the vapor chamber 200, and then may be supplied back to the liquid coolant passage 11.

[0058] Due to this configuration, the liquid coolant LC can be supplied to a position near a heat source within the semiconductor chip 100, and thus the semiconductor chip 100 can be effectively cooled. When the liquid coolant LC evaporates near the heat source to become the vapor coolant VC, the vapor coolant VC can escape into the vapor coolant passage 12. Due to the capillary action of the first capillary wick structure 310, the space of the liquid coolant passage 11 from which the vapor coolant VC has escaped is quickly filled with the liquid coolant LC introduced from the surrounding area.

[0059] The vapor coolant VC introduced into the vapor coolant passage 12 can flow to the vapor chamber 200. Therefore, since the liquid coolant LC is quickly and continuously supplied to the periphery of the heat source, the thermal resistance near the heat source can be reduced. In other words, the formation of a vapor film on the surface of the cooling channel 10 close to the heat source can be reduced or eliminated, thereby uniformly maintaining the cooling performance, suppressing the formation of hot spots, and effectively dissipating heat.

[0060] In addition, the liquid coolant LC can be moved by the capillary force generated by the first capillary wick structure 310. Therefore, a pump or the like for moving the liquid coolant LC can be omitted, and thus the energy consumption of the system can be reduced. In addition, the area of ​​the heat transfer surface is increased by the first capillary wick structure 310, and thus the heat transfer efficiency from the semiconductor chip 100 to the coolant can be improved. In addition, bubbles of the vapor coolant VC can be effectively removed from the heat transfer surface, thereby improving the CHF performance. In addition, since the liquid coolant LC moves by the capillary force, the posture of the semiconductor chip 100 is not affected. That is, even when Figure 1 When the semiconductor device 1 (e.g., an integrated circuit device) shown is applied to an electronic device in an upright or inverted state, the liquid coolant passage 11 and the vapor coolant passage 12 also remain intact, so that the liquid coolant LC can move along the liquid coolant passage 11 and the vapor coolant VC can move along the vapor coolant passage 12.

[0061] The steam chamber 200 may discharge heat generated from the semiconductor chip 100 to the outside of the semiconductor device 1. According to an embodiment, the steam chamber 200 may be configured such that at least a portion of the steam chamber 200 may be adjacent to a surface of the semiconductor chip 100. For example, the steam chamber 200 may be disposed on an upper portion of the semiconductor chip 100 and may be in fluid communication with the cooling channel 10. In other words, when viewed in a specified direction (e.g., when viewed from above), at least a portion of the steam chamber 200 may overlap with the cooling channel 10.

[0062] According to one embodiment, the steam chamber 200 may include an upper plate 201 facing the cooling channel 10, a lower plate 202 facing the upper plate 201, and a side plate 203. The side plate 203 may be disposed between the upper plate 201 and the lower plate 202. According to one embodiment, the lower plate 202 may include an opening 204 in a region corresponding to the cooling channel 10, and the opening 204 may be in fluid communication with the steam coolant passage 12. Therefore, the steam coolant VC may move to the steam chamber 200 along the steam coolant passage 12.

[0063] In one embodiment, the steam chamber 200 may include a metal material having high machinability for a mechanical process such as stamping, pressing or crimping. For example, the steam chamber 200 may include at least one selected from a copper alloy, a low carbon stainless steel such as stainless steel 304L or 316L, and a titanium alloy. According to one embodiment, when the steam chamber 200 includes an upper plate 201, a lower plate 202, and a side plate 203, the upper plate 201, the lower plate 202, and the side plate 203 may be manufactured by a mechanical process such as a stamping process, a pressing process, or a crimping process. For example, when the upper plate 201, the lower plate 202, and the side plate 203 include a copper alloy, a plate material having a predetermined thickness may be used to form the upper plate 201, the lower plate 202, and the side plate 203. When the upper plate 201, the lower plate 202, and the side plate 203 include a stainless steel material or a titanium alloy material, a plate material having a predetermined thickness may be used to form the upper plate 201, the lower plate 202, and the side plate 203. However, the embodiment is not limited thereto, and the steam chamber 200 may have any shape capable of exchanging heat with the outside and may include any material.

[0064] As described above, the steam chamber 200 includes the upper plate 201, the lower plate 202, and the side plate 203, and the cooling channel 10 is provided in a region corresponding to the opening 204 of the lower plate 202. Therefore, a sealed space may be formed along the steam chamber 200 and the cooling channel 10. However, the embodiment is not limited thereto, and the steam chamber 200 may have any shape capable of forming a sealed space together with the cooling channel 10.

[0065] According to one embodiment, the vapor chamber 200 may cause a phase change of the vapor coolant VC moving along the vapor coolant passage 12 so that the vapor coolant VC may be transformed into the liquid coolant LC. For example, the liquid coolant LC moving along the liquid coolant passage 11 may absorb heat generated from the semiconductor chip 100 and may thus be transformed into the vapor coolant VC. Then, the vapor coolant VC may move along the vapor coolant passage 12 into the vapor chamber 200.

[0066] The vapor coolant VC introduced into the vapor chamber 200 along the vapor coolant passage 12 can discharge the absorbed heat to the outside of the vapor chamber 200 while flowing in the vapor chamber 200, thereby being transformed into the liquid coolant LC. Due to the second capillary wick structure 320 arranged along the inner surface of the vapor chamber 200, the liquid coolant LC that has undergone a phase change in the vapor chamber 200 can move laterally along the inner surface of the vapor chamber 200.

[0067] The second capillary wick structure 320 may move the liquid coolant LC in the steam chamber 200 in one direction by capillary action. The second capillary wick structure 320 may be arranged along the inner surface of the steam chamber 200. In one embodiment, the second capillary wick structure 320 may be directly formed on the inner surface of the steam chamber 200, or may be formed separately from the steam chamber 200 and then connected to the steam chamber 200. For example, the second capillary wick structure 320 may have a mesh shape, a braided wire shape, or a chemically formed porous shape (e.g., a laminate of metal powder). According to one embodiment, the second capillary wick structure 320 may be integrally formed with the steam chamber 200 by using the same material as that of the steam chamber 200, or may be separately formed from the steam chamber 200 by using a material different from that of the steam chamber 200. For example, the second capillary wick structure 320 may include copper.

[0068] According to one embodiment, when the steam chamber 200 includes an upper plate 201, a lower plate 202, and a side plate 203, the second capillary wick structure 320 may include a 2-1st capillary wick structure 3210 disposed on the upper plate 201, a 2-2nd capillary wick structure 3220 disposed on the lower plate 202, and a 2-3rd capillary wick structure 3230 disposed on the side plate 203. In this case, the 2-1st capillary wick structure 3210 may face the first capillary wick structure 310. In addition, the 2-2nd capillary wick structure 3220 may face the 2-1st capillary wick structure 3210. In this case, the 2-3rd capillary wick structure 3230 may be disposed between the 2-1st capillary wick structure 3210 and the 2-2nd capillary wick structure 3220.

[0069] As described above, the vapor coolant VC introduced into the vapor chamber 200 along the vapor coolant passage 12 may discharge the absorbed heat to the outside while flowing in the vapor chamber 200, and may thus be transformed into the liquid coolant LC. For example, the vapor coolant VC introduced into the vapor chamber 200 along the vapor coolant passage 12 may discharge heat by contacting the upper plate 201, and may thus be transformed into the liquid coolant LC. After the phase change, the liquid coolant LC may flow along the coolant flow path 20 and enter the cooling channel 10.

[0070] According to one embodiment, the coolant flow path 20 may be formed in a lateral direction along the inner surface of the steam chamber 200 by the second capillary wick structure 320. For example, the first coolant flow path 21 may be formed in a lateral direction (e.g., direction X) along the inner surface of the upper plate 201 by the 2-1st capillary wick structure 3210 arranged on the upper plate 201. In addition, the second coolant flow path 22 may be formed in a vertical direction (e.g., direction Z) along the inner surface of the side plate 203 by the 2-3rd capillary wick structure 3230 arranged on the side plate 203. In addition, the third coolant flow path 23 may be formed in a lateral direction (e.g., direction X) along the inner surface of the lower plate 202 by the 2-2nd capillary wick structure 3220 arranged on the lower plate 202. Therefore, the coolant flow path 20 may include a first coolant flow path 21, a second coolant flow path 22, and a third coolant flow path 23. Therefore, the liquid coolant LC formed by the phase change may flow along the first coolant flow path 21 , the second coolant flow path 22 , and the third coolant flow path 23 , and may then enter the cooling channel 10 .

[0071] In one embodiment, the first capillary wick structure 310 disposed on the bottom of the cooling channel 10 and the second capillary wick structure 320 disposed on the inner surface of the vapor chamber 200 may include materials different from each other. For example, the first capillary wick structure 310 disposed on the cooling channel 10 may be integrally formed with the substrate 110 of the semiconductor chip 100 and may include the same material as that of the substrate 110, such as silicon. In this case, the second capillary wick structure 320 may include the same material as that of the vapor chamber 200, such as a metal material (such as copper) for heat exchange with the outside.

[0072] As described above, the second capillary wick structure 320 arranged along the coolant flow path 20 may include a material different from the material included in the first capillary wick structure 310 arranged along the cooling channel 10, and the step 15 may be formed between the vapor chamber 200 in which the coolant flow path 20 is provided and the upper surface 112 of the semiconductor chip 100 in which the cooling channel 10 is provided. Therefore, the third capillary wick structure 330 may be arranged between the first capillary wick structure 310 and the second capillary wick structure 320 to allow the liquid coolant LC flowing along the coolant flow path 20 to move to the cooling channel 10.

[0073] Due to the third capillary wick structure 330, the liquid coolant LC flowing along the coolant flow path 20 can move from the second capillary wick structure 320 to the first capillary wick structure 310 by capillary action. According to one embodiment, the third capillary wick structure 330 may have a wire shape extending in one direction. In this case, the third capillary wick structure 330 may include a metal material such as copper.

[0074] The third capillary wick structure 330 may be disposed between the first capillary wick structure 310 and the second capillary wick structure 320 to connect the first capillary wick structure 310 and the second capillary wick structure 320 to each other. Therefore, the liquid coolant LC moving along the coolant flow path 20 through the second capillary wick structure 320 may be transferred along the coolant connection channel 30 formed by the third capillary wick structure 330 to the cooling channel 10 formed with the first capillary wick structure 310. An example shape of the third capillary wick structure 330 is described below.

[0075] The package case 700 may accommodate the semiconductor chip 100 and the semiconductor chip 900. The package case 700 may at least partially surround the semiconductor chip 100. For example, the package case 700 may completely surround the semiconductor chip 100 except for the upper surface 112 of the semiconductor chip 100. Since the package case 700 may completely surround the semiconductor chip 100 except for the upper surface 112 of the semiconductor chip 100, the coolant evaporated into the vapor coolant VC by absorbing the heat of the semiconductor chip 100 may be discharged to the steam chamber 200 provided on the upper portion of the package case 700.

[0076] According to an embodiment, the semiconductor device 1 may further include a semiconductor chip 900 arranged two-dimensionally relative to the semiconductor chip 100. For example, the semiconductor chip 900 may be arranged on both sides of the semiconductor chip 100 in the first direction X. According to an embodiment, the semiconductor chip 900 may be arranged on both sides of the semiconductor chip 100 in the third direction Y. According to an embodiment, the semiconductor chip 100 may be a logic chip, and the semiconductor chip 900 may be a memory chip. For example, the semiconductor chip 900 may be a high bandwidth memory (HBM) chip. The semiconductor chip 900 may include a plurality of HBM chips stacked in a vertical direction (direction Z).

[0077] According to an embodiment, the semiconductor chip 900 may be arranged below the vapor chamber 200, for example, below the 2-2 wick structure 3220. According to an embodiment, the heat sink 710 may be arranged between the semiconductor chip 900 and the vapor chamber 200. The heat sink 710 may be in contact with the semiconductor chip 900 and may be thermally connected to the vapor chamber 200. For example, the heat sink 710 may include a thermal interface material (TIM) or a graphite sheet. However, the embodiment is not limited thereto.

[0078] Figure 4 is a partial perspective view schematically showing the configuration of a semiconductor device 1 according to an embodiment. Figure 5 is a plan view schematically showing a cooling channel 10 and a first capillary wick structure 310 according to an embodiment.

[0079] Reference Figure 3 As described above, the vapor coolant VC moving into the vapor chamber 200 along the vapor coolant passage 12 may be transformed into the liquid coolant LC within the vapor chamber 200. The liquid coolant LC formed by the phase change may move along the coolant flow path 20 through the second capillary wick structure 320. In addition, the liquid coolant LC introduced into the cooling channel 10 may move along the liquid coolant passage 11 through the first capillary wick structure 310.

[0080] According to one embodiment, the capillary force of the first capillary wick structure 310 and the second capillary wick structure 320 may be defined by the following equation 1. In equation 1, ΔP c refers to capillary force, σ refers to surface tension, r c It refers to the capillary radius.

[0081] (Equation 1)

[0082] At the capillary limit, the capillary force is equal to ΔP L , ΔP L is the pressure used to move the coolant through the capillary wick. Based on Darcy’s law, ΔP can be calculated by the following equation 2 L In Equation 2, μ L Refers to the dynamic viscosity of the coolant, L eff refers to the effective length of the pipeline, K refers to the permeability of the capillary core, A w refers to the cross-sectional area of ​​the capillary wick, and V refers to the volume flow rate.

[0083] (Equation 2)

[0084] Here, the volume flow rate V can be calculated by the following equation 3. In equation 3, Q refers to the heat transfer rate, ρ refers to the density of the coolant, and ΔH vap It refers to the latent heat of vaporization.

[0085] (Equation 3)

[0086] The following Equation 4 can be derived from Equation 1, Equation 2, and Equation 3.

[0087] (Equation 4)

[0088] By considering the amount of heat generated by the semiconductor chip 100, the appropriate capillary radius r can be calculated using Equation 4 c Based on the calculated capillary radius r c The shape factor and capillary distance of the first capillary wick structure 310 are determined.

[0089] Reference Figure 4 and Figure 5 In one embodiment, the first capillary wick structure 310 may have a square cross-sectional shape in the lateral direction. The first capillary wick structures 310 may be arranged at equal intervals in the first direction X and the third direction Y. The liquid coolant LC moves into the space (first lateral capillary channel) between adjacent first capillary wick structures 310 by capillary force. The height of each first capillary wick structure 310, the length 310a of each side of the first capillary wick structure 310, and the distance 310b between the first capillary wick structures 310 in the first direction X and the third direction Y may be determined so that the radius of the equivalent circle corresponding to the cross-sectional area of ​​the space (first lateral capillary channel) between two adjacent first capillary wick structures 310 may satisfy the capillary radius r calculated using equations 1 to 4. c The second capillary wick structure 320 arranged along the coolant flow path 20 may be substantially the same as the first capillary wick structure 310 , and thus a repeated description thereof is omitted herein.

[0090] Figure 6 is a cross-sectional view schematically showing a cooling channel 10 and a third capillary wick structure 330 according to an embodiment.

[0091] For ease of illustration, the dimensions of the third capillary wick structure 330 are Figure 6 is enlarged. Figure 6 , the first capillary wick structure 310 and the second capillary wick structure 320 are omitted. Figure 4 and Figure 6 For example, the planar shape of the cooling channel 10 may be circular. However, the embodiment is not limited thereto, and the planar shape of the cooling channel 10 may be a polygonal shape, such as a square shape or a triangle shape.

[0092] The third capillary wick structure 330 may be aligned with the inner portion of the cooling channel 10 in a direction toward the inner portion of the cooling channel 10. Figure 3The steps 15 formed between the steam chamber 200 and the upper surface 112 of the semiconductor chip 100 are shown to be spaced apart by a capillary distance. In one embodiment, the cross-sectional shape of the third capillary wick structure 330 in the lateral direction may be a square. However, the embodiment is not limited thereto. The third capillary wick structure 330 may extend in a vertical direction (direction Z) from the upper surface of the first capillary wick structure 310 closest to the step 15 among the first capillary wick structures 310. The third capillary wick structure 330 may extend in a vertical direction (direction Z) from the upper surface of the first capillary wick structure 310 closest to the step 15 among the first capillary wick structures 310, and may also extend toward the upper surface of the second capillary wick structure 320 along a plane (XY plane) perpendicular to the vertical direction (direction Z). Therefore, the third capillary wick structure 330 may be arranged between the first capillary wick structure 310 closest to the step 15 and the second capillary wick structure 320 to connect the first capillary wick structure 310 and the second capillary wick structure 320 to each other.

[0093] According to one embodiment, the third capillary wick structure 330 is spaced apart from the step 15, wherein the step 15 has a circular shape and is formed between the steam chamber 200 and the upper surface 112 of the semiconductor chip 100. For example, the third capillary wick structures 330 are spaced apart from each other at intervals in the circumferential direction. Each first vertical capillary channel 331 is formed between the third capillary wick structures 330 that are arranged adjacent to each other among the third capillary wick structures 330, and each second vertical capillary channel 332 is formed between each third capillary wick structure 330 and the step 15. In one embodiment, Figure 3 The illustrated coolant connection channel 30 may include a first vertical capillary channel 331 and a second vertical capillary channel 332 .

[0094] The length 330a of one side of each third capillary wick structure 330 and the separation distance 330b of the third capillary wick structure 330 and the step 15 may be determined by a capillary distance capable of generating a capillary force in the second vertical capillary channel 332. In other words, the cross-sectional area of ​​each second vertical capillary channel 332 is defined by the length 330a of one side of each third capillary wick structure 330 and the separation distance 330b of the third capillary wick structure 330 and the step 15. The length 330a of one side of each third capillary wick structure 330 and the separation distance 330b of the third capillary wick structure 330 and the step 15 may be determined so that the radius of an equivalent circle corresponding to the cross-sectional area of ​​each second vertical capillary channel 332 may satisfy the capillary radius r calculated using equations 1 to 4. c For example, when the transverse cross-sectional shape of the third capillary wick structure 330 is a square, the separation distance 330b between the third capillary wick structure 330 and the step 15 may be the capillary radius r c twice as much.

[0095] The length 330a of one side of each third capillary wick structure 330 and the distance 330c between the third capillary wick structures 330 may be determined so that a capillary force may be generated in the first vertical capillary channel 331. In other words, the cross-sectional area of ​​each first vertical capillary channel 331 is defined by the length 330a of one side of each third capillary wick structure 330 and the distance 330c between adjacent third capillary wick structures 330. The length 330a of one side of each third capillary wick structure 330 and the distance 330c between adjacent third capillary wick structures 330 may be determined so that the radius of an equivalent circle corresponding to the cross-sectional area of ​​each first vertical capillary channel 331 may satisfy the capillary radius r calculated using equations 1 to 4. c .

[0096] Although the transverse cross-sectional shape of the first capillary wick structure 310, the second capillary wick structure 320 and the third capillary wick structure 330 is a square shape in the above-mentioned embodiment, the embodiment is not limited thereto. The transverse cross-sectional shape of the first capillary wick structure 310, the second capillary wick structure 320 and the third capillary wick structure 330 can be any shape capable of generating capillary force, such as various polygonal shapes (including triangular shapes and square shapes), partial circular shapes and partial elliptical shapes. In addition, the first capillary wick structure 310, the second capillary wick structure 320 and the third capillary wick structure 330 do not need to have the same cross-sectional shape in the transverse direction. For example, the first capillary wick structure 310, the second capillary wick structure 320 and the third capillary wick structure 330 can have two or more different cross-sectional shapes in the transverse direction.

[0097] Figure 7 is a view schematically showing a configuration of a semiconductor device 1 ′ according to an embodiment. Figure 8 It is shown Figure 7 Magnified view of area B.

[0098] Reference Figure 7 and Figure 8 The semiconductor device 1' of the embodiment may include a semiconductor chip 100, a cooling channel 10, a vapor chamber 200 configured to dissipate heat generated from the semiconductor chip 100, a package housing 700, and a printed circuit board 1000. Except for the capillary wick structure 340 of No. 3-1, the configuration of the semiconductor device 1' is the same as that of Figure 1 The configurations of the semiconductor devices 1 shown are substantially the same, and therefore, repeated descriptions of the same configurations are omitted here.

[0099] The 3-1st capillary wick structure 340 may connect the first capillary wick structure 310 to the second capillary wick structure 320 facing the first capillary wick structure 310. According to one embodiment, the 3-1st capillary wick structure 340 may have a wire shape extending between the upper surface of the first capillary wick structure 310 and the upper surface of the second capillary wick structure 320. For example, the 3-1st capillary wick structure 340 may have a wire shape extending in a vertical direction (direction Z) between the upper surface of the first capillary wick structure 310 and the upper surface of the second capillary wick structure 320. In one embodiment, the cross-sectional shape of the 3-1st capillary wick structure 340 in the transverse direction may be a square shape. However, the embodiment is not limited thereto. The cross-sectional shape of the 3-1st capillary wick structure 340 in the transverse direction may be any shape capable of generating a capillary force, such as various polygonal shapes (including a triangular shape and a square shape), a partially circular shape, and a partially elliptical shape. In addition, the 3-1st capillary wick structure 340 does not need to have the same cross-sectional shape in the transverse direction. For example, the 3-1st capillary wick structure 340 may have two or more different cross-sectional shapes in the transverse direction.

[0100] The length of one side of each 3-1st capillary wick structure 340 and the distance between the 3-1st capillary wick structures 340 may be the same as the reference Figure 6 The length 330a of one side of each third capillary wick structure 330 and the distance 330c between the third capillary wick structures 330 are described as being substantially the same. In other words, the length of one side of each 3-1st capillary wick structure 340 and the distance between the 3-1st capillary wick structures 340 may be determined so that the radius of an equivalent circle corresponding to the cross-sectional area of ​​each vertical capillary channel formed between the 3-1st capillary wick structures 340 may satisfy the capillary radius r calculated using equations 1 to 4. c .

[0101] According to one embodiment, the 3-1st capillary wick structure 340 may connect the first capillary wick structure 310 to the second capillary wick structure 320 facing the first capillary wick structure 310, thereby forming the fourth coolant flow path 24 that allows the liquid coolant LC to flow from the second capillary wick structure 320 to the first capillary wick structure 310 facing the second capillary wick structure 320. For example, the fourth coolant flow path 24 may be formed from the second capillary wick structure 320 to the first capillary wick structure 310 facing the second capillary wick structure 320 in the vertical direction (direction Z).

[0102] Fig. 9 is a view schematically showing a configuration of a semiconductor device 1 ″ according to an embodiment.

[0103] Reference Fig. 9The semiconductor device 1" of this embodiment may include a semiconductor chip 100, a cooling channel 10, a vapor chamber 200-1 configured to dissipate heat generated from the semiconductor chip 100, and a printed circuit board 1000. Except for the vapor chamber 200-1, the second capillary wick structure 320-1, and the third capillary wick structure 330-1, the configuration of the semiconductor device 1" is similar to Figure 1 The configurations of the semiconductor devices 1 shown are substantially the same, and therefore, repeated descriptions of the same configurations are omitted here.

[0104] The vapor chamber 200-1 may dissipate heat generated from the semiconductor chip 100 to the outside of the semiconductor device 1″. According to an embodiment, the vapor chamber 200-1 may be configured such that at least a portion of the vapor chamber 200-1 may be adjacent to a surface of the semiconductor chip 100. For example, the vapor chamber 200-1 may surround the semiconductor chip 100 above the printed circuit board 1000 and may be in fluid communication with the cooling channel 10. In other words, when viewed in a specified direction (e.g., when viewed from above), at least a portion of the vapor chamber 200-1 may overlap with the cooling channel 10.

[0105] In one embodiment, the steam chamber 200-1 may include a metal material having high machinability for a mechanical process such as stamping, pressing, or crimping. For example, the steam chamber 200-1 may include at least one selected from a copper alloy, a low-carbon stainless steel such as stainless steel 304L or 316L, and a titanium alloy. However, the embodiment is not limited thereto, and the steam chamber 200-1 may have any shape capable of exchanging heat with the outside and may include any material.

[0106] As described above, the steam chamber 200-1 surrounds the semiconductor chip 100, thereby forming a sealed space around the cooling channel 10 provided at the upper side of the semiconductor chip 100. However, the embodiment is not limited thereto, and the steam chamber 200-1 may have any shape as long as the steam chamber 200-1 forms a sealed space around the cooling channel 10.

[0107] The vapor coolant VC may move to the vapor chamber 200-1 along the vapor coolant passage 12 included in the cooling channel 10. The vapor coolant VC introduced into the vapor chamber 200-1 releases the absorbed heat to the outside while moving in the vapor chamber 200-1, thereby transforming into the liquid coolant LC. For example, the vapor coolant VC introduced into the vapor chamber 200-1 along the vapor coolant passage 12 may contact the upper plate 201-1 and release the heat to the outside, thereby undergoing a phase change to the liquid coolant LC. The liquid coolant LC formed by the phase change may move along the coolant flow path 20 and enter the cooling channel 10.

[0108] According to one embodiment, the coolant flow path 20 may be formed in the lateral direction and the vertical direction along the inner surface of the vapor chamber 200-1 through the second capillary wick structure 320-1. The coolant flow path 20 may be connected to the coolant storage portion 810, and the liquid coolant LC supplied to the cooling channel 10 is accommodated in the coolant storage portion 810. In the current embodiment, the coolant storage portion 810 is provided outside the semiconductor chip 100. In this case, the height of the coolant storage portion 810 may not exceed the upper surface 112 of the semiconductor chip 100 in the vertical direction (direction Z).

[0109] The third capillary wick structure 330-1 may be arranged between the first capillary wick structure 310 and the coolant storage portion 810 to connect the first capillary wick structure 310 and the coolant storage portion 810 to each other. According to an embodiment, the third capillary wick structure 330-1 may form a fourth coolant flow path 40, and the liquid coolant LC is supplied from the coolant storage portion 810 to the first capillary wick structure 310 via the fourth coolant flow path 40 by a capillary force. In an embodiment, the third capillary wick structure 330-1 may be spaced apart from the sidewall 115 of the semiconductor chip 100 by a capillary distance toward the outside of the cooling channel 10. In an embodiment, the third capillary wick structure 330-1 may extend from the coolant storage portion 810 in a vertical direction (direction Z). Therefore, the third capillary wick structure 330-1 may be arranged between the coolant storage portion 810 and the first capillary wick structure 310 and connect the coolant storage portion 810 and the first capillary wick structure 310 to each other.

[0110] Fig.10 1 is a view schematically showing a configuration of a semiconductor device 1'' according to an embodiment.

[0111] Fig.10 The semiconductor device 1"' of the embodiment shown in FIG. Figure 1 The semiconductor device 1 of the illustrated embodiment is different in that the semiconductor device 1'" includes a plurality of semiconductor chips. Hereinafter, the same reference numerals denote elements having the same functions, and repeated descriptions thereof are omitted.

[0112] Reference Fig.10According to an embodiment, a semiconductor device 1'' may include a plurality of semiconductor chips (such as a first semiconductor chip 100-1 and a second semiconductor chip 100-2) stacked in a vertical direction (direction Z). The first semiconductor chip 100-1 may be disposed above the second semiconductor chip 100-2 in the vertical direction (direction Z). A plurality of cooling channels (e.g., cooling channels 10-1 and 10-2) and a plurality of first capillary wick structures 310-1 and 310-2 may be provided for the first semiconductor chip 100-1 and the second semiconductor chip 100-2, respectively. For example, a cooling channel 10-1 and a first capillary wick structure 310-1 may be provided for the first semiconductor chip 100-1, and a cooling channel 10-2 and a first capillary wick structure 310-2 may be provided for the second semiconductor chip 100-2. The description of the cooling channel 10 and the first capillary wick structure 310 may be applied to the cooling channels 10-1 and 10-2 and the first capillary wick structures 310-1 and 310-2.

[0113] The steam chamber 200-2 may be disposed on the upper side of the uppermost semiconductor chip among the plurality of semiconductor chips in the vertical direction (direction Z). For example, the steam chamber 200-2 may be disposed on the upper side of the first semiconductor chip 100-1. The second capillary wick structure 320-2 may be arranged along the inner surface of the steam chamber 200-2. The description of the steam chamber 200 and the second capillary wick structure 320 may be applied to the steam chamber 200-2 and the second capillary wick structure 320-2.

[0114] A plurality of encapsulation shells 700-1 and 700-2 may surround the first semiconductor chip 100-1 and the second semiconductor chip 100-2, respectively. In this case, the encapsulation shells 700-1 and 700-2 may surround the first semiconductor chip 100-1 and the second semiconductor chip 100-2, respectively, except for the upper surface of the first semiconductor chip 100-1 and the upper surface of the second semiconductor chip 100-2. The steam chamber 200-2 may be disposed on the upper portion of the uppermost encapsulation shell of the encapsulation shells 700-1 and 700-2 in the vertical direction (direction Z). For example, the steam chamber 200-2 may be disposed on the upper portion of the encapsulation shell 700-1. The description of the encapsulation shell 700 may be applied to the encapsulation shells 700-1 and 700-2.

[0115] The second semiconductor chip 100 - 2 has a Figure 1 The semiconductor chips 100 of the embodiments described above have substantially the same structure. The first semiconductor chip 100-1 is a semiconductor chip in which the connection channel 50 is added to the reference Figure 1 The type of semiconductor chip 100 of the described embodiments.

[0116] Except for the bottom semiconductor chip among the plurality of semiconductor chips, the connection channel 50 may penetrate all of the plurality of semiconductor chips in the vertical direction (direction Z). For example, when the plurality of semiconductor chips include a first semiconductor chip 100-1 and a second semiconductor chip 100-2 stacked in the vertical direction (direction Z), the connection channel 50 may penetrate the first semiconductor chip 100-1 in the vertical direction (direction Z), but may not penetrate the second semiconductor chip 100-2 which is the lowest in the vertical direction (direction Z). In the above example, two semiconductor chips are stacked. However, the embodiment is not limited thereto. When three or more semiconductor chips are stacked, the connection channel 50 may penetrate all of the semiconductor chips except the bottom semiconductor chip.

[0117] The third capillary wick structure 330-2 may be arranged above the uppermost semiconductor chip among the plurality of semiconductor chips in the vertical direction (direction Z). For example, the third capillary wick structure 330-2 may be arranged between the first capillary wick structure 310-1 and the second capillary wick structure 320-2, wherein the first capillary wick structure 310-1 is arranged on the upper side of the first semiconductor chip 100-1. Figure 1 The description given of the third capillary wick structure 330 may be applied to the third capillary wick structure 330 - 2 .

[0118] The 3-1st capillary wick structure 340-1 may be arranged above the uppermost semiconductor chip among the plurality of semiconductor chips in the vertical direction (direction Z). For example, the 3-1st capillary wick structure 340-1 may be arranged above the first semiconductor chip 100-1 between the first capillary wick structure 310-1 and the second capillary wick structure 320-2 facing each other. Figure 7 The description given of the 3-1st capillary wick structure 340 may be applied to the 3-1st capillary wick structure 340 - 1 .

[0119] At least one of the 3-2nd capillary wick structures 350 may be disposed in the connection channel 50 so that the liquid coolant may move from the second capillary wick structure 320-2 to each of at least one of the first capillary wick structures 310-2 by capillary action. For example, the at least one of the 3-2nd capillary wick structures 350 may be disposed between the second capillary wick structure 320-2 and the first capillary wick structure 310-2, the first capillary wick structure 310-2 being disposed on the lowermost second semiconductor chip 100-2 of the plurality of semiconductor chips stacked in the vertical direction (direction Z). In this case, the at least one of the 3-2nd capillary wick structures 350 may move the liquid coolant between the second capillary wick structure 320-2 and the first capillary wick structure 310-2 by capillary force.

[0120] According to an embodiment, the 3-2nd capillary wick structure 350 may have a conductive line shape extending in one direction. In this case, the 3-2nd capillary wick structure 350 may include a metal material, such as copper.

[0121] The 3-2nd capillary wick structure 350 may be spaced apart from the sidewall 51 of the connection channel 50 toward the inside of the cooling channel 10-2 by a capillary distance. In one embodiment, the cross-sectional shape of the 3-2nd capillary wick structure 350 in the transverse direction may be a square shape. However, the embodiment is not limited thereto.

[0122] The 3-2nd capillary wick structure 350 may extend in the vertical direction (direction Z) from the second capillary wick structure 320-2 closest to the connection channel 50 to the upper surface of the first capillary wick structure 310-2 disposed on the second semiconductor chip 100-2 (the lowermost semiconductor chip). For example, the 3-2nd capillary wick structure 350 may extend in the vertical direction (direction Z) from the upper surface of the first capillary wick structure 310-2 closest to the connection channel 50, and may further extend along a plane (plane XY) perpendicular to the vertical direction (direction Z) to the upper surface of the second capillary wick structure 320-2 closest to the connection channel 50. Therefore, the 3-2nd capillary wick structure 350 may connect the first capillary wick structure 310-2 and the second capillary wick structure 320-2 closest to the connection channel 50. As a result, the liquid coolant formed by the phase change in the vapor chamber 200 - 2 may be supplied to the cooling channels 10 - 1 and 10 - 2 respectively formed in the first semiconductor chip 100 - 1 and the second semiconductor chip 100 - 2 (stacked semiconductor chips).

[0123] As described above, according to one or more of the above embodiments, the semiconductor device adopts the two-phase liquid cooling structure.

[0124] According to one or more of the above embodiments, a semiconductor device includes a vapor chamber having an enlarged heat transfer surface.

[0125] According to one or more of the above embodiments, a semiconductor device adopting a two-phase liquid cooling structure can prevent a decrease in cooling efficiency caused by adsorption of bubbles on a heat generating surface.

[0126] According to one or more of the above embodiments, the semiconductor device does not require additional power to move the cooling fluid.

[0127] It should be understood that the example embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects of each example embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although non-limiting example embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the present disclosure.

[0128] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0156314 filed in the Korean Intellectual Property Office on November 13, 2023, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A semiconductor device comprising: a semiconductor chip including a cooling channel recessed in the semiconductor chip from an upper surface of the semiconductor chip, the cooling channel being configured to have a liquid coolant flow therein so as to absorb heat generated during operation of the semiconductor chip; a first capillary wick structure on a bottom of the cooling channel, the bottom being parallel to the upper surface of the semiconductor chip in a lateral direction, the first capillary wick structure being configured to move the liquid coolant along the bottom of the cooling channel in the lateral direction by capillary action; a vapor chamber above the semiconductor chip and in fluid communication with the cooling channel; a second capillary wick structure on the inner surface of the vapor chamber and configured to move the liquid coolant along the inner surface of the vapor chamber by capillary action; as well as A third capillary wick structure is between the first capillary wick structure and the second capillary wick structure and is configured to move the liquid coolant from the second capillary wick structure to the first capillary wick structure by capillary action. 2 . The semiconductor device according to claim 1 , wherein the first capillary wick structure includes a material different from a material included in the second capillary wick structure.

3. The semiconductor device according to claim 1, wherein the first capillary wick structure comprises silicon, and The second capillary wick structure includes copper. The semiconductor device of claim 2 , wherein the third capillary wick structure comprises copper.

5. The semiconductor device according to claim 1 , wherein the third capillary wick structure connects together some of the first capillary wick structures closest to a step formed between the vapor chamber and the upper surface of the semiconductor chip and some of the second capillary wick structures closest to the step, and The third capillary wick structure is spaced apart from the step by a capillary distance toward the inside of the cooling channel. 6 . The semiconductor device according to claim 5 , wherein the third capillary wick structure has a conductive line shape extending between an upper surface of the first capillary wick structure and an upper surface of the second capillary wick structure.

7. The semiconductor device according to claim 5, wherein the third capillary wick structure comprises: a first vertical capillary channel configured to move the liquid coolant in a vertical direction between adjacent ones of the third capillary wick structures; as well as The second vertical capillary channel is configured to move the liquid coolant between the step and the third capillary wick structure in the vertical direction. 8 . The semiconductor device according to claim 1 , further comprising a fourth capillary wick structure connecting together at least some of the first capillary wick structures and at least some of the second capillary wick structures facing each other. 9 . The semiconductor device according to claim 8 , wherein the fourth capillary wick structure has a conductive line shape extending between an upper surface of the first capillary wick structure and an upper surface of the second capillary wick structure.

10. The semiconductor device according to claim 1, further comprising a package casing surrounding the semiconductor chip, wherein the upper surface of the semiconductor chip is exposed from the package casing, The steam chamber is located on the upper portion of the packaging shell.

11. The semiconductor device according to claim 10, wherein the second capillary wick structure comprises: a 2-1st capillary wick structure, a portion of which faces the first capillary wick structure; A 2-2 capillary wick structure facing another portion of the 2-1 capillary wick structure; as well as The 2-3rd capillary wick structure is between the 2-1st capillary wick structure and the 2-2nd capillary wick structure. 12 . The semiconductor device according to claim 10 , further comprising an additional semiconductor chip below the 2-2 capillary wick structure and within the package housing.

13. A semiconductor device comprising: a plurality of semiconductor chips stacked in a vertical direction, the plurality of semiconductor chips comprising a plurality of cooling channels, the plurality of cooling channels being respectively recessed in the plurality of semiconductor chips from upper surfaces of the plurality of semiconductor chips, the plurality of cooling channels being configured to have a coolant flow in a liquid phase therein so as to absorb heat generated during operation of the plurality of semiconductor chips; a plurality of first capillary core structures, respectively on the bottoms of the plurality of cooling channels, the bottoms of the plurality of cooling channels being respectively parallel to the upper surfaces of the plurality of semiconductor chips in a lateral direction, the plurality of first capillary core structures being configured to move the coolant in the lateral direction along the bottoms of the plurality of cooling channels by capillary action; a vapor chamber above an uppermost semiconductor chip among the plurality of semiconductor chips, the vapor chamber being in fluid communication with the plurality of cooling channels; a second capillary wick structure on the inner surface of the vapor chamber and configured to move the coolant along the inner surface of the vapor chamber by capillary action; a connection channel passing through other semiconductor chips except the bottom semiconductor chip among the plurality of semiconductor chips; a third capillary wick structure between the second capillary wick structure and a first capillary wick structure disposed on an uppermost semiconductor chip among the plurality of semiconductor chips among the plurality of first capillary wick structures, the third capillary wick structure being configured to move the coolant in the liquid phase from the second capillary wick structure to the first capillary wick structure by capillary action; as well as At least one fourth capillary wick structure is configured to move the coolant in the liquid phase from the second capillary wick structure to at least one of the plurality of first capillary wick structures along the connecting channel by capillary action. 14 . The semiconductor device according to claim 13 , wherein the plurality of first capillary wick structures include a material different from a material included in the second capillary wick structures.

15. The semiconductor device of claim 13, wherein the plurality of first capillary wick structures comprise silicon, and The second capillary wick structure includes copper. 16 . The semiconductor device of claim 13 , wherein the third capillary wick structure and the at least one fourth capillary wick structure comprise copper.

17. The semiconductor device according to claim 13, wherein the third capillary wick structure connects together some of the first capillary wick structures closest to a step formed between the vapor chamber and the upper surfaces of the plurality of semiconductor chips and some of the second capillary wick structures closest to the step, and The third capillary wick structure is spaced apart from the step by a capillary distance toward the inside of the plurality of cooling channels. 18 . The semiconductor device according to claim 13 , wherein the at least one fourth capillary wick structure comprises a fourth capillary wick structure spaced apart from a sidewall of the connecting channel by a capillary distance toward an interior of the plurality of cooling channels.

19. The semiconductor device according to claim 13, further comprising a fifth capillary wick structure connecting together some of the first capillary wick structures and some of the second capillary wick structures facing each other, Wherein some of the first capillary wick structures are on the uppermost semiconductor chip among the plurality of semiconductor chips.

20. The semiconductor device according to claim 13, further comprising a plurality of packaging cases surrounding the plurality of semiconductor chips respectively, wherein the upper surfaces of the plurality of semiconductor chips are exposed from the plurality of packaging shells, respectively; and The vapor chamber is on an upper portion of one of the plurality of packaging cases surrounding the uppermost semiconductor chip among the plurality of semiconductor chips.

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