MPCVD resonant cavity, MPCVD equipment and application method of MPCVD equipment

Abstract

The invention provides an MPCVD resonant cavity, MPCVD equipment and an application method of the MPCVD resonant cavity. The cavity comprises an upper cover, a cavity base and a replaceable cavity wall structure with various specification parameters, wherein the upper cover and the cavity base are designed to be of a fixed structure; an air inlet is fixedly formed in the upper cover; the cavity base is fixedly provided with a microwave feed inlet, a deposition base station and an air outlet; sealing pieces are respectively arranged on the upper and lower surfaces of the cavity wall structure; the upper cover is connected with the cavity base; each cavity wall structure is detachably connected between the upper cover and the cavity base, and is hermetically connected with the upper cover and the cavity base through the sealing element; during use, electromagnetic simulation is carried out according to the diamond deposition process to obtain deposition area electric field distribution suitable for the current process, specification parameters of the used cavity wall structure are determined, and the cavity wall structure with the corresponding specification parameters is installed between the upper cover and the cavity base; according to the technical scheme, the deposition requirements of diamonds of different growth processes are met, and the deposition flexibility is improved.

Description

Technical Field

[0001] The present application relates to the technical field of microwave plasma chemical deposition, and in particular to an MPCVD resonant cavity, an MPCVD device and an application method thereof. Background Art

[0002] Microwave Plasma Chemical Vapor Deposition (MPCVD) is an important technology for preparing high-quality diamond materials. It decomposes chemical vapor substances under the stimulation of microwave electric fields under low pressure and high temperature conditions and deposits them on a substrate. It has the advantages of high efficiency, uniformity and controllability. MPCVD technology is widely used in materials science, surface engineering, electronic devices and optical devices.

[0003] Currently, the resonant cavities used in MPCVD deposition equipment are mostly integrated designs. Although this design is easy to implement, it is difficult for diamond deposition to meet the requirements of diamond deposition size and process diversity, and its flexibility of use is poor. Summary of the invention

[0004] The purpose of the present application is to solve one of the above-mentioned technical defects and to provide an MPCVD resonant cavity, an MPCVD device and an application method thereof, which can replace the cavity wall body as needed and is suitable for the deposition requirements of diamonds with different growth processes.

[0005] An MPCVD resonant cavity comprises: an upper cover, a cavity base, and replaceable cavity wall structures with various specifications and parameters;

[0006] The upper cover is provided with an air inlet;

[0007] The cavity base is fixedly provided with a microwave feed inlet, a deposition base and an air outlet;

[0008] The cavity wall structure has a set shape and sealing members are respectively provided on the upper and lower surfaces;

[0009] The upper cover is connected to the cavity base;

[0010] Each of the cavity wall structures is detachably mounted between the upper cover and the cavity base, and is sealed and connected to the upper cover and the cavity base through the sealing member;

[0011] When in use, electromagnetic simulation is performed according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and the specification parameters of the cavity wall structure are determined based on the electric field distribution in the deposition area, and the cavity wall structure with corresponding specification parameters is installed between the upper cover and the cavity base.

[0012] In one embodiment, the upper cover is further provided with an observation window and a temperature measurement window; the deposition base is connected to the chamber base through a quartz window.

[0013] In one embodiment, the upper and lower surfaces of the cavity wall structure are provided with slots for accommodating the sealing member (30);

[0014] When the upper cover and the cavity base are connected, the cavity is sealed by squeezing the sealing member (30).

[0015] In one embodiment, the cavity wall structure is designed into various shapes, sizes and heights;

[0016] Each shape corresponds to diamond deposition of different area, uniformity and power, each size corresponds to different microwave field distribution intensity and uniformity in the actual deposition area, and the height is the height for achieving the best coupling efficiency at the operating frequency of the microwave source.

[0017] In one embodiment, the upper cover and the cavity base are respectively provided with a plurality of bolt holes for fixed connection via mounting bolts of set length;

[0018] The cavity wall structure is also connected to a plurality of connection parts; wherein one end of the connection part is connected to the cavity wall structure, and the other end is provided with a through hole;

[0019] During installation, the cavity wall structure is overlapped with the upper cover and the cavity base so that the bolt hole corresponds to the through hole, the screw rod of the mounting bolt is passed through the bolt hole and the through hole and then fixed with a nut, and the cavity wall structure is installed between the upper cover and the cavity base.

[0020] In one embodiment, a support frame is provided on the cavity base, and the upper cover is connected to the cavity base through the support frame;

[0021] The cavity base is provided with a fixing rod for fixing the cavity wall structure;

[0022] During installation, the cavity wall structure is placed in the space between the upper cover and the cavity base, the cavity wall structure is fixed by pushing the fixing rod, and then the cavity base and the upper cover are pressed and squeezed to close the cavity.

[0023] In one embodiment, the support frame includes: a fixing portion disposed at four corner positions of the cavity base and a lifting frame connected to the fixing portion;

[0024] The upper cover is installed on the lifting frame;

[0025] The lifting frame adjusts the distance between the upper cover and the cavity base by lifting to adapt to cavity wall structures of different heights;

[0026] The upper cover is connected to one side of the lifting frame through a hinge;

[0027] The upper cover is closed and opened in a flip-cover manner;

[0028] When the upper cover is closed, it is locked by the calipers arranged on the three sides of the lifting frame.

[0029] In one embodiment, the fixing part comprises: four rotating screws arranged on the cavity base, and the lifting frame comprises a top frame and four sleeves with internal threads;

[0030] The sleeves are respectively sleeved on the rotating screws;

[0031] The sleeve is connected to the four corners of the top frame, and the upper cover is connected to one side of the top frame through a hinge;

[0032] The rotating screw drives the lifting frame to move up and down by rotating.

[0033] In one embodiment, coaxial rotating gears are respectively provided on the four rotating screws, and the rotating gears are connected by a first transmission structure, and the first transmission structure is driven by a first motor to achieve synchronous rotation of the four rotating screws;

[0034] The cavity base is provided with four rotating screws, the fixing rods are provided with threads and pass through the rotating screws respectively, the four rotating screws are connected through a second transmission structure, and the second transmission structure is driven by a second motor to drive the four rotating screws to rotate to synchronously advance the four fixing rods.

[0035] An MPCVD device comprises: a microwave source and the MPCVD resonant cavity;

[0036] The microwave source feeds microwaves into the MPCVD resonant cavity through the microwave feeding port.

[0037] An application method of an MPCVD device, comprising:

[0038] Perform electromagnetic simulation based on the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process;

[0039] Determining the specification parameters of the cavity wall structure used in the MPCVD resonant cavity based on the electric field distribution in the deposition area; wherein the specification parameters include shape, size and height;

[0040] Replacing the cavity wall structure of the MPCVD resonant cavity according to the specification parameters and pressing and sealing the cavity wall structure;

[0041] Placing a single crystal diamond seed crystal on a deposition base (22);

[0042] The microwave source is controlled to feed microwaves into the MPCVD resonant cavity to perform diamond deposition on the single crystal diamond seed crystal.

[0043] In one embodiment, replacing the cavity wall structure of the MPCVD resonant cavity according to the specification parameters and pressing and sealing the cavity wall structure includes:

[0044] Open the top cover;

[0045] Insert the cavity wall structure from the top of the MPCVD resonant cavity;

[0046] Controlling the lifting and lowering of four rotating screws to adjust the distance between the upper cover and the cavity base according to the height calculated by electromagnetic simulation;

[0047] Controlling the fixing rods to advance synchronously until they clamp the cavity wall structure;

[0048] Close the upper cover and tighten the caliper.

[0049] The technical solution of the above-mentioned embodiment is based on the MPCVD resonant cavity design, and designs a replaceable MPCVD resonant cavity wall body with various specifications and parameters. When in use, the cavity wall body with the best matching degree can be adopted according to the deposition requirements, which is suitable for the deposition requirements of diamonds with different growth processes and improves the deposition flexibility.

[0050] Furthermore, it provides a method for determining the specification parameters of the cavity wall structure to be used based on electromagnetic simulation of the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and a more matching cavity wall structure can be selected for replacement, which can flexibly match the deposition requirements of diamonds of different growth processes.

[0051] Furthermore, an automated support frame structure connecting the chamber base and the upper cover is designed, which can automatically calculate the chamber wall structure that needs to be replaced, and automatically adjust the height to adapt to the height of the chamber wall structure and automatically clamp the chamber wall structure after replacement, which can match the deposition requirements of various diamonds.

[0052] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0054] Figure 1 is a schematic diagram of the MPCVD resonant cavity structure of an embodiment;

[0055] Figure 2 is a schematic cross-sectional view of an exemplary MPCVD resonant cavity;

[0056] Figure 3 This is an example of a schematic diagram of microwave field superposition in a circular cavity deposition area;

[0057] Figure 4 This is an example schematic diagram of microwave field superposition in a square cavity deposition area;

[0058] Figure 5 is a schematic structural diagram of an example cavity wall structure;

[0059] Figure 6 is a schematic diagram of an exemplary MPCVD resonant cavity installation;

[0060] Figure 7 is a schematic diagram of the structure of an exemplary MPCVD resonant cavity;

[0061] Figure 8 is a top view of an example cavity base;

[0062] Fig. 9 is a side view schematic diagram of an exemplary MPCVD resonant cavity;

[0063] Fig.10 is a side view schematic diagram of another example of an MPCVD resonant cavity;

[0064] Fig.11 is a schematic diagram of a first transmission structure of an example;

[0065] Fig.12 is a schematic diagram of a first transmission structure of an example;

[0066] Fig.13 is an electrical structure diagram of an example MPCVD resonant cavity;

[0067] Fig.14 is a schematic diagram of the structure of an MPCVD device according to an embodiment;

[0068] Fig.15 The present invention is a flow chart of an application method of an MPCVD device according to an embodiment. DETAILED DESCRIPTION

[0069] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be interpreted as limiting the present application.

[0070] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, but does not exclude the presence or addition of one or more other features, integers, steps, operations.

[0071] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0072] refer to Figure 1 As shown, Figure 1 The MPCVD resonant cavity structure diagram of an embodiment is shown in the figure. The overall structure of the MPCVD resonant cavity is a square design, including: an upper cover 01 and a cavity bottom cavity base 02, and a replaceable intermediate cavity wall main cavity wall structure 31 with various specifications and parameters. The parameters of different specifications and parameters mainly include differences in shape, size and height, etc. Figure 2 As shown, Figure 2 It is a schematic cross-sectional view of an exemplary MPCVD resonant cavity, wherein an air inlet 11 is fixedly provided on the cavity top cover 01, and a microwave feed port 21, a deposition platform 22 and an air outlet 23 are fixedly provided on the cavity bottom base 02; further, an observation window 12 and a temperature measurement window 13 etc. may be provided on the cavity top cover 01, and the deposition platform 22 may be connected to the cavity bottom base 02 through a quartz window 26.

[0073] The cavity wall structure 31 has a set shape, which can be designed to be circular, square or rounded rectangular; and sealing members 30 are respectively provided on the upper and lower surfaces of the cavity wall structure 31; further, card grooves 30a can be opened on the upper and lower surfaces of the cavity wall structure 31 to accommodate the sealing member 30; illustratively, the sealing member 30 can be a rubber ring, which can be embedded in the card groove 30a, and the upper cover 01 and the cavity base 02 are fixedly connected by squeezing the rubber ring to achieve cavity sealing, thereby forming a vacuum cavity.

[0074] The upper cover 01 is connected to the cavity base 02; each cavity wall structure 31 is connected between the upper cover 01 and the cavity base 02 in a detachable manner, and is sealed to the upper cover 01 and the cavity base 02 through a seal 30; when in use, electromagnetic simulation is performed according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and the specification parameters of the cavity wall structure 31 are determined based on the electric field distribution in the deposition area, and the cavity wall structure 31 with corresponding specification parameters is installed between the upper cover 01 and the cavity base 02.

[0075] In the scheme of the above-mentioned embodiment, an MPCVD resonant cavity design is provided with accessories that can be replaced as needed. The upper cover 01 and the cavity base 02 are fixed structures, and the cavity wall structure 31 is a replaceable structure design. Therefore, it can be replaced according to the corresponding microwave field distribution according to different growth requirements, thereby greatly improving the flexibility of the MPCVD deposition equipment and reducing the cost at the same time, and facilitating the maintenance of the vacuum degree in the cavity and the arrangement of water cooling pipes.

[0076] In one embodiment, the cavity wall structure 31 can be designed into a variety of shapes, sizes and heights according to usage requirements; wherein each shape corresponds to diamond deposition of different areas, uniformities and powers, and each size corresponds to different microwave field distribution intensities and uniformities in the actual deposition area. Generally, the height of the cavity wall structure 31 is the height that achieves the best coupling efficiency at the operating frequency of the microwave source.

[0077] Specifically, the electromagnetic simulation program can be used to determine in advance the cavity wall structures 31 with different specifications and parameters, such as circular, square and other structures, diameter, side length, height and other dimensions, according to the electric field distribution in the deposition area suitable for different needs and processes. Then, cavity wall structures 31 with various specifications and parameters can be prepared according to the needs. When in use, electromagnetic simulation is performed according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and the specification parameters of the cavity wall structure 31 are determined based on the electric field distribution in the deposition area. Since the specification parameters of the cavity wall structure 31 are continuous values, in the actual implementation process, several groups of specification parameters can be selected to make the corresponding cavity wall structures 31. Each group of cavity wall structures 31 corresponds to specification parameters within a certain range of values. Therefore, the MPCVD cavity equipment can achieve more flexible and convenient diamond deposition by replacing different cavity wall structures 31.

[0078] like Figure 3 As shown, Figure 3 It is an example schematic diagram of microwave field superposition in a circular cavity deposition area. When the cross-section of the cavity wall structure 31 is circular, the corresponding cavity wall structure 31 can realize the superposition of TM021 and TM011 microwave modes in the deposition area. Under this structure, the microwave focusing ability is relatively strong, which is suitable for the deposition of small-area diamonds.

[0079] like Figure 4As shown, Figure 4 This is an example schematic diagram of the microwave field superposition in the deposition area of ​​a square cavity. When the cross-section of the cavity wall structure 31 is square, the corresponding cavity wall structure 31 can realize the superposition of TM021, TM031, and TM011 microwave modes in the deposition area. Under this structure, the microwave field has a strong adjustable ability and is suitable for the deposition of diamonds with large areas and higher uniformity requirements. In addition, by changing the size of the square cavity wall, electric field distributions with different electric field strengths and uniformities can be formed in the deposition area, making the deposition of diamonds more flexible. And because it is different from the cylindrical microwave superposition mode, the upper cover 01 is not easy to form a secondary strong field area and it is not easy to excite plasma, so it is also suitable for higher power deposition.

[0080] Regarding the selection of size, after determining the shape of the cavity wall structure 31 according to the actual process requirements, the diameter or side length of the cavity wall structure 31 can be determined according to the TM021 distribution effect and the superposition strength of TM021 and TM031; taking the microwave frequency of 2.45 GHz as an example: the microwave wavelength is λ=122.4 mm, if TM021 is selected as the microwave distribution mode, the diameter range of the cavity wall structure 31 is approximately between 1.5λ and 2.5λ, and the specific size is determined according to the intensity and uniformity of the microwave field distribution in the actual deposition area.

[0081] In one embodiment, if the actual diamond deposition range is small, it is necessary to increase the intensity of the microwave field distribution in the deposition area, and a smaller diameter or side length is selected within the range. If the actual diamond deposition range is large and the deposition uniformity requirement is high, it is necessary to increase the uniformity of the microwave field distribution in the deposition area, and a larger diameter or side length is selected within the range.

[0082] In one embodiment, after the shape and size are selected, the height of the cavity wall structure 31 is determined according to the shape and size, so that the resonant cavity can achieve the best coupling efficiency at the operating frequency of the microwave source 04, and ensure that the eigenfrequency of the eigenmode of the selected resonant cavity is consistent with the operating frequency of the microwave source 04, that is, fmode = fsource.

[0083] In one embodiment, in order to improve flexibility, other line structures can be added to the cavity wall structure 31 according to actual simulation results, such as adding rounded corners to a square to form a rounded rectangular shape, adding straight edges to a circular cavity structure, etc., which provides more flexible options for the shape change of the cavity wall structure 31 to achieve a better matching effect.

[0084] In one embodiment, in order to avoid errors between simulation and actual use, a replaceable MPCVD chamber structure can be combined with a liftable base to add a tuning structure, which can more accurately control the excitation of plasma during the actual growth process.

[0085] In order to make the technical solution of the present application more clear, more embodiments of the structure of the MPCVD resonant cavity are provided below in conjunction with the accompanying drawings.

[0086] In one embodiment, the MPCVD resonant cavity of the present application, such as Figure 5 As shown, Figure 5 It is a structural schematic diagram of an example cavity wall structure, wherein the cavity wall structure 31 is connected to a plurality of connection parts 32; wherein one end of the connection part 32 is connected to the cavity wall structure 31, and the other end is provided with a through hole 32b; the upper cover 01 and the cavity base 02 are respectively provided with a plurality of bolt holes for fixed connection by means of mounting bolts 23 of a set length, and four different cavity wall structures 31 are shown in the figure, wherein Figure (a) and Figure (b) are square-shaped designs with different side lengths, and Figure (c) and Figure (d) are circular-shaped designs with different diameters.

[0087] During installation, if Figure 6 As shown, Figure 6 This is an example schematic diagram of the installation of an MPCVD resonant cavity. The cavity wall structure 31, the upper cover 01 and the cavity base 02 are overlapped and placed so that the bolt hole corresponds to the through hole 32b. The screw rod of the mounting bolt 23 is passed through the bolt hole and the through hole 32b and then fixed with a nut to install the cavity wall structure 31 between the upper cover 01 and the cavity base 02.

[0088] As in the above-mentioned embodiment, the replaceable cavity wall structure 31 has a simple structure and the overall MPCVD resonant cavity cost is low.

[0089] In one embodiment, the MPCVD resonant cavity of the present application, such as Figure 7 As shown, Figure 7 01 is a schematic diagram of the structure of an exemplary MPCVD resonant cavity, a support frame 102 is provided on the cavity base 02, and an upper cover 01 is connected to the support frame 102, thereby being fixed to the cavity base 02; Figure 8 As shown, Figure 802 is a top view of an exemplary cavity base. A rotating screw 300 with an internal thread can be provided on the cavity base 02 for passing through a fixing rod 310. The external thread of the fixing rod 310 is engaged with the internal thread of the rotating screw 300. When the rotating screw 300 is rotated, the fixing rod 310 can be pushed forward or moved backward. For example, four rotating screws 300300a, 300b, 300c and 300d can be provided at the center positions of the four sides of the cavity base 02, corresponding to the four fixing rods 310. Fixed rods 310a, 310b, 310c and 310d are used to fix the cavity wall structure 31; during installation, the cavity wall structure 31 is placed in the space between the upper cover 01 and the cavity base 02, and the cavity wall structure 31 is clamped and fixed by pushing the four fixing rods 310a, 310b, 310c and 310d, and then the cavity base 02 and the upper cover 01 are used to press and squeeze the cavity wall structure 31 to achieve cavity sealing.

[0090] In one embodiment, in order to achieve height adjustment to match the height of the cavity wall structure 31, as shown in FIG. Fig. 9 As shown, Fig. 9 It is a side view of an exemplary MPCVD resonant cavity, the support frame 102 may include a fixing portion 210 provided at four corner positions of the cavity base 02 and a lifting frame 220 connected to the fixing portion 210; the upper cover 01 is installed on the lifting frame 220; the lifting frame 220 adjusts the distance between the upper cover 01 and the cavity base 02 by lifting to adapt to the cavity wall structure 31 of different heights; further, the upper cover 01 can be connected to one side of the lifting frame 220 by a hinge; the upper cover 01 is closed and opened in a flip-up form; when the upper cover 01 is closed, it is locked by the calipers 33 provided on the three sides of the lifting frame 220.

[0091] As in the above-mentioned embodiment, the entire upper cover 01 can be smoothly lifted and lowered by the structure of the support frame 102 , and the upper cover 01 can be opened and closed by the flip-top structural design, so that the cavity wall structure 31 can be easily replaced.

[0092] In one embodiment, in order to achieve stable automatic lifting, as Fig.10 As shown, Fig.10 It is a side schematic diagram of another example of an MPCVD resonant cavity, the fixing part 210 may include four rotating screws 211 arranged on the cavity base 02; the lifting frame 220 includes a top frame 221 and four sleeves 222 with internal threads, wherein the sleeves 222 are respectively sleeved on the four rotating screws, and the upper cover 01 is connected to one side of the top frame 221 through a hinge; the rotating screws 211, 212, 213 and 214 can be driven to rotate by a motor to be lifted and lowered.

[0093] As in the above-mentioned embodiment, the lifting frame 220 and the upper cover 01 can be stably lifted and lowered by rotating the screw rod, thereby ensuring the consistency of the lifting height.

[0094] In one embodiment, in order to realize the stable automatic lifting of the entire upper cover 01, the four rotating screws 211a, 211b, 211c and 211d can be connected through the first transmission structure 24, such as Fig.11 middle, Fig.11 It is a schematic diagram of an example of a first transmission structure, in which the rotating screw 211a and the rotating screw 211b are driven by a worm gear 241, and the rotating screw 211c and the rotating screw 211d are driven by another worm gear 242, and the structural parameters of the two worm gears 241 and 242 are the same; the first motor 240 drives the two worm gears 241 and 242 to rotate through two bevel gear sets 243 and 244, thereby realizing the synchronous lifting and lowering of the four rotating screws 211a, 211b, 211c and 211d.

[0095] In one embodiment, in order to achieve stable synchronous advancement to clamp the cavity wall structure 31, as Fig.12 middle, Fig.12 It is a schematic diagram of an example of a first transmission structure, four fixed rods 310a, 310b, 310c and 310d are connected by a second transmission structure 34, and are correspondingly arranged on the four sides of the cavity base 02. The four fixed rods 310a, 310b, 310c and 310d are sequentially driven by a worm gear 341, a bevel gear set 342, a worm gear 343, a bevel gear set 344, a worm gear 345, a bevel gear set 346, and a worm gear 347. The second transmission structure 34 is driven by a second motor 340 to synchronously advance the four fixed rods 310a, 310b, 310c and 310d, so that the cavity wall structure 31 can be accurately placed at the center of the cavity to ensure the effect of the diamond deposition process.

[0096] As in the above embodiment, Fig.13 As shown, Fig.13It is an example electrical structure diagram of an MPCVD resonant cavity. The first motor 240 and the second motor 340 can be connected to the control device 40. The control device 40 can perform electromagnetic simulation based on the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and determine the specification parameters of the cavity wall structure 31 based on the electric field distribution in the deposition area. After placing the corresponding cavity wall structure 31, the first motor 240 is controlled to drive the rotating screws 211, 212, 213, and 214 to rotate synchronously, adjust the top frame 221 to a suitable height, and control the second motor 340 to drive the fixed rod 310. In addition, the control device 40 can control the microwave source 04 to feed microwaves into the MPCVD resonant cavity through the microwave feeding port 21.

[0097] As in the above-mentioned embodiment, the cavity wall structure 31 to be replaced can be automatically calculated and prompted, and after replacement, the height can be automatically adjusted to adapt to the height of the cavity wall structure 31, and the cavity wall structure 31 can be automatically clamped. This technical solution can configure a large number of cavity wall structures 31 of various specifications, sizes and shapes, and can match a variety of diamond deposition requirements.

[0098] An embodiment of the MPCVD apparatus is described below.

[0099] The present application provides an MPCVD device, referring to Fig.14 As shown, Fig.14 It is a schematic diagram of the structure of an MPCVD device of an embodiment, including a microwave source 04 and an MPCVD resonant cavity of any of the above embodiments; wherein the microwave source 04 feeds microwaves into the MPCVD resonant cavity through a microwave feed port 21; the MPCVD device of the above embodiment, through a cavity design in which accessories can be replaced as needed, realizes a replaceable MPCVD device with multiple specifications and parameters at a lower equipment processing and use cost, and can realize deposition of different growth processes to meet various demands for diamonds.

[0100] An example of an application method of the MPCVD device is described below.

[0101] refer to Fig.15 As shown, Fig.15 The present invention is a flow chart of an application method of an MPCVD device according to an embodiment, comprising:

[0102] Step S1, performing electromagnetic simulation according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process.

[0103] Step S2, determining the specification parameters of the cavity wall structure 31 used in the MPCVD resonant cavity based on the electric field distribution in the deposition area; wherein the specification parameters include shape, size and height.

[0104] Step S3, replacing the cavity wall structure 31 of the MPCVD resonant cavity according to the specification parameters and pressing and sealing the cavity wall structure 31.

[0105] Step S4 , placing a single crystal diamond seed crystal on the deposition base 22 .

[0106] Step S5, controlling the microwave source 04 to feed microwaves into the MPCVD resonant cavity to perform diamond deposition on the single crystal diamond seed crystal.

[0107] The solution of the above-mentioned embodiment is based on the MPCVD resonant cavity design, and a replaceable MPCVD resonant cavity wall body with various specifications and parameters is designed. When in use, the cavity wall body with the best matching degree can be adopted according to the deposition requirements, which is suitable for the deposition requirements of diamonds with different growth processes and improves the deposition flexibility.

[0108] In one embodiment, for step S1, electromagnetic simulation is performed according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process; the control device 40 can use the electromagnetic simulation program to determine the cavity wall structure 31 with different specifications and parameters in advance, such as circular, square and other structures, diameter, side length, height and other dimensions, according to the electric field distribution in the deposition area suitable for different needs and processes, and then prepare the cavity wall structure 31 with various specifications and parameters according to the needs. When in use, electromagnetic simulation is performed according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and the specification parameters of the cavity wall structure 31 are determined based on the electric field distribution in the deposition area. Since the specification parameters of the cavity wall structure 31 are continuous values, in the actual implementation process, several groups of specification parameters can be selected to make the corresponding cavity wall structure 31, and each group of cavity wall structures 31 corresponds to specification parameters within a certain range of values. Therefore, the MPCVD cavity equipment can achieve more flexible and convenient diamond deposition by replacing different cavity wall structures 31.

[0109] The detailed scheme for obtaining the electric field distribution in the deposition area suitable for the current process can be referred to the previous embodiment and will not be repeated here.

[0110] In one embodiment, the step S2 of replacing the cavity wall structure 31 of the MPCVD resonant cavity according to the specification parameters and pressing and sealing the cavity wall structure 31 may include the following:

[0111] Step S201, open the upper cover 01;

[0112] Step S202, placing the cavity wall structure 31 from the top of the MPCVD resonant cavity;

[0113] Step S203, controlling the four rotating screws to move up and down to adjust the distance between the upper cover 01 and the cavity base 02 according to the height calculated by electromagnetic simulation;

[0114] Step S203, controlling the fixing rod 310 to be synchronously advanced until the cavity wall structure 31 is clamped;

[0115] Step S204, close the upper cover 01 and tighten the caliper 33.

[0116] As in the above-mentioned embodiment, the cavity wall structure 31 to be replaced can be automatically calculated and prompted, and after replacement, the height can be automatically adjusted to adapt to the height of the cavity wall structure 31, and the cavity wall structure 31 can be automatically clamped. This technical solution can configure a large number of cavity wall structures 31 of various specifications, sizes and shapes, and can match a variety of diamond deposition requirements.

[0117] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. An MPCVD resonant cavity, characterized in that: include: An upper cover (01), a cavity base (02), and a replaceable cavity wall structure (31) with various specifications and parameters; The upper cover (01) is provided with an air inlet (11); The cavity base (02) is fixedly provided with a microwave feed port (21), a deposition base (22) and an air outlet (23); The cavity wall structure (31) has a set shape and sealing members (30) are respectively provided on the upper and lower surfaces; The upper cover (01) is connected to the cavity base (02); Each of the cavity wall structures (31) is detachably mounted between the upper cover (01) and the cavity base (02), and is sealedly connected to the upper cover (01) and the cavity base (02) through the sealing member (30); When in use, electromagnetic simulation is performed according to the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process, and the specification parameters of the cavity wall structure (31) are determined based on the electric field distribution in the deposition area, and the cavity wall structure (31) with corresponding specification parameters is installed between the upper cover (01) and the cavity base (02).

2. The MPCVD resonant cavity according to claim 1, characterized in that: The upper and lower surfaces of the cavity wall structure (31) are provided with slots (30a) for accommodating the sealing member (30); When the upper cover (01) and the cavity base (02) are connected, the cavity is sealed by squeezing the sealing member (30).

3. The MPCVD resonant cavity according to claim 1, characterized in that: The cavity wall structure (31) is designed to have various shapes, sizes and heights; Each shape corresponds to diamond deposition of different area, uniformity and power, each size corresponds to different microwave field distribution intensity and uniformity in the actual deposition area, and the height is the height for achieving the best coupling efficiency at the operating frequency of the microwave source.

4. The MPCVD resonant cavity according to claim 3, characterized in that: The upper cover (01) and the cavity base (02) are respectively provided with a plurality of bolt holes for fixed connection via mounting bolts (23) of a set length; The cavity wall structure (31) is also connected to a plurality of connection parts (32); wherein one end of the connection part (32) is connected to the cavity wall structure (31), and the other end is provided with a through hole (32b); During installation, the cavity wall structure (31), the upper cover (01) and the cavity base (02) are placed in an overlapping manner so that the bolt hole corresponds to the through hole (32b), and the screw rod of the mounting bolt (23) is passed through the bolt hole and the through hole (32b) and then fixed with a nut, so that the cavity wall structure (31) is installed between the upper cover (01) and the cavity base (02).

5. The MPCVD resonant cavity according to claim 3, characterized in that: A support frame (102) is provided on the cavity base (02), and the upper cover (01) is connected to the cavity base (02) via the support frame (102); The cavity base (02) is provided with a fixing rod (310) for fixing the cavity wall structure (31); During installation, the cavity wall structure (31) is placed in the space between the upper cover (01) and the cavity base (02), the cavity wall structure (31) is fixed by pushing the fixing rod (310), and then the cavity base (02) and the upper cover (01) are pressed and squeezed to squeeze the cavity wall structure (31) to achieve cavity sealing.

6. The MPCVD resonant cavity according to claim 5, characterized in that: The support frame (102) comprises: a fixing portion (210) disposed at four corner positions of the cavity base (02) and a lifting frame (220) connected to the fixing portion (210); The upper cover (01) is installed on the lifting frame (220); The lifting frame (220) adjusts the distance between the upper cover (01) and the cavity base (02) by lifting to adapt to cavity wall structures (31) of different heights; The upper cover (01) is connected to one side of the lifting frame (220) via a hinge; The upper cover (01) is closed and opened in a flip-cover manner; When the upper cover (01) is closed, it is locked by means of calipers (33) arranged on three sides of the lifting frame (220).

7. The MPCVD resonant cavity according to claim 6, characterized in that: The fixing part (210) comprises: four rotating screws arranged on the cavity base (02); the lifting frame (220) comprises a top frame (221) and four sleeves (222) with internal threads; The sleeves (222) are respectively sleeved on the rotating screws; The sleeve (222) is connected to the four corners of the top frame (221), and the upper cover (01) is connected to one side of the top frame (221) via a hinge; The rotating screw drives the lifting frame (220) to move up and down by rotating.

8. The MPCVD resonant cavity according to claim 7, characterized in that: The four rotating screws are respectively provided with coaxial rotating gears, and the rotating gears are connected by a first transmission structure (24). The first transmission structure (24) is driven by a first motor (240) to achieve synchronous rotation of the four rotating screws; The cavity base (02) is provided with four rotating screws (300), the fixed rod (310) has threads and passes through the rotating screws (300) respectively, the four rotating screws (300) are connected through a second transmission structure (34), and the second transmission structure (34) is driven by a second motor (340) to drive the four rotating screws (300) to rotate to synchronously advance the four fixed rods (310).

9. An MPCVD device, characterized in that: include: A microwave source (04) and the MPCVD resonant cavity according to any one of claims 1 to 8; The microwave source (04) feeds microwaves into the MPCVD resonant cavity through the microwave feeding port (21).

10. An application method of an MPCVD device, characterized in that: include: Perform electromagnetic simulation based on the diamond deposition process to obtain the electric field distribution in the deposition area suitable for the current process; Determining the specification parameters of the cavity wall structure (31) used in the MPCVD resonant cavity based on the electric field distribution in the deposition area; wherein the specification parameters include shape, size and height; Replacing the cavity wall structure (31) of the MPCVD resonant cavity according to the specification parameters and pressing and sealing the cavity wall structure (31); Placing a single crystal diamond seed crystal on a deposition base (22); A microwave source (04) is controlled to feed microwaves into the MPCVD resonant cavity to perform diamond deposition on the single crystal diamond seed crystal.

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