Terahertz resonance tunneling diode radiation source integrated with partial reflection type transmission metasurface

Abstract

The invention discloses a terahertz resonant tunneling diode radiation source integrated with a partial reflection type transmission metasurface, which belongs to the technical field of terahertz wireless transceiving and comprises a substrate, and a resonant tunneling diode radiation source, the partial reflection type transmission metasurface and the transmission type transmission metasurface which are sequentially stacked above the substrate, the top of the resonant tunneling diode radiation source is provided with a large-area coplanar ground layer; the partial reflection metasurface comprises a reflection surface array and a partial reflection metasurface bottom supporting layer; the transmission-type metasurface comprises a transmission surface array and a transmission-type metasurface bottom supporting layer. A single resonant tunneling diode radiation source of air side radiation is adopted as a radiation source, a partial reflection metasurface is integrated above the radiation source to form a low-profile reflection microcavity for collimating and enhancing radiation terahertz waves, and then a transmission-type metasurface is integrated to realize in-phase superposition of the terahertz waves. According to the invention, generation of terahertz waves can be realized only by adopting a single resonant tunneling diode radiation source, and the problem that unit consistency is difficult to guarantee due to the fact that each unit needs to be integrated with an RTO in a traditional array synthesis mode is avoided.

Description

Technical Field

[0001] The present invention belongs to the technical field of terahertz wireless transceiver, and in particular relates to a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmission metasurface. Background Art

[0002] Terahertz waves are located between microwaves and infrared waves. They have the characteristics of large transmission capacity, narrow beam, good directivity, strong penetration and high safety, and are particularly easy to realize high-speed wireless communication and high-precision radar detection. Therefore, terahertz technology has become one of the core technologies of 6G wireless communication and wireless sensing. Among them, high-power coherent radiation sources that can work at room temperature are the key link in conducting terahertz technology research.

[0003] Resonant Tunneling Diode (RTD) is a semiconductor device based on quantum tunneling effect. It has the advantages of working at room temperature, small size, easy integration, low power consumption and scalability. Its negative differential resistance and DC nonlinear characteristics can be used to realize terahertz oscillators. However, the main weakness of RTD oscillator (RTD Oscillator, RTO) is its low output power, which makes it difficult to apply to the application requirements of 6G wireless communication and wireless sensing for high radiation power.

[0004] Current research trends show that it is feasible to use array synthesis to achieve a high-radiation-power terahertz source. The traditional array synthesis method requires the design of RTO units first, and then the mutual injection locking between RTO units is used to achieve inter-unit coupling, and then array synthesis is achieved. For example, the Chinese patent "A misaligned-fed slot array antenna based on resonant tunneling diodes" with application number 201310631828.2 and the journal paper "Coherent Power Combination in a Resonant-Tunneling-Diode Arrayed Oscillator With Simplified Structure" with DOI 10.1109 / TTHZ.2023.3270672 both use RTO units with integrated slot antennas. For example, the journal article “A High-Power Terahertz Source Over 10mW at 0.45THz Using an Active Antenna Array With Integrated Patch Antennas and Resonant-Tunneling Diodes” with DOI 10.1109 / TTHZ.2022.3180492 uses an RTO unit with integrated patch antennas. In addition, the Chinese patent “An integrated terahertz radiation source” with application number 202410569665.8 uses an RTO with a reflective layer enhancement and can be expanded into an array.

[0005] However, the traditional array synthesis method has the following three problems: (1) The array synthesis method poses a challenge to the consistency of the process; (2) It requires an efficient array coupling design method; and (3) Each array unit requires RTO. Summary of the invention

[0006] In view of the problems existing in the traditional array synthesis method, the present invention provides a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface. Only a single resonant tunneling diode radiation source is used to generate terahertz waves, avoiding the problem in the traditional array synthesis method that each unit needs to be integrated with RTO, which makes it difficult to ensure unit consistency.

[0007] The technical solution adopted by the present invention is as follows:

[0008] A terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface, comprising a substrate, and a resonant tunneling diode radiation source (RTO), a partially reflective metasurface (PRMS) and a transmissive metasurface (TMS) sequentially stacked on the substrate;

[0009] The top of the resonant tunneling diode radiation source has a large-area coplanar stratum;

[0010] The partially reflective metasurface includes a reflective surface array and a partially reflective metasurface bottom support layer located around the bottom of the reflective surface array;

[0011] The transmissive metasurface includes a transmissive surface array and a transmissive metasurface bottom supporting layer located around the bottom of the transmissive surface array.

[0012] Furthermore, the reflective surface array includes a plurality of periodically arranged partially reflective metasurface units, each partially reflective metasurface unit being formed by alternatingly stacking N+1 layers of partially reflective metasurface single-layer structures and N layers of partially reflective metasurface interlayer dielectric layers, where N is a positive integer.

[0013] Furthermore, the partially reflective supersurface single-layer structure includes a partially reflective supersurface single-layer bottom metal layer, a partially reflective supersurface single-layer middle dielectric layer and a partially reflective supersurface single-layer top metal layer stacked in sequence.

[0014] Furthermore, the transmission surface array includes a plurality of periodically arranged transmission metasurface units, each of which is formed by alternatingly stacking M+1 layers of transmission metasurface single-layer structures and M layers of transmission metasurface interlayer dielectric layers, where M is a positive integer.

[0015] Furthermore, the transmissive supersurface single-layer structure includes a transmissive supersurface single-layer bottom metal layer, a transmissive supersurface single-layer middle dielectric layer and a transmissive supersurface single-layer top metal layer stacked in sequence.

[0016] Furthermore, in order to improve the transmittance, the transmissive supersurface single-layer bottom metal layer or the transmissive supersurface single-layer top metal layer in the transmissive supersurface single-layer structure may be omitted, but both cannot be omitted at the same time.

[0017] Furthermore, the resonant tunneling diode radiation source is a terahertz coplanar-to-ground resonant tunneling diode radiation source (CPG RTO).

[0018] Further, the resonant tunneling diode radiation source also includes a resonant tunneling diode, a through-hole dielectric layer, a feed line, a feed ground layer, a stabilizing resistor, a first metal through hole, a second metal through hole, a passivation layer and an integrated antenna;

[0019] Among them, the feed line, the feeding formation and the stabilizing resistor are located on the upper surface of the substrate, the feed line and the feeding formation do not contact each other, and the stabilizing resistor is located in the groove formed between the feed line and the feeding formation; there is a boss at the center of the substrate, and the resonant tunneling diode is located on the upper surface of the boss; the passivation layer is located around the upper surface of the resonant tunneling diode; the integrated antenna is located on the upper surface of the passivation layer and is interconnected with the top collector metal layer of the resonant tunneling diode; the through-hole dielectric layer is located above the feed line, the feeding formation and the stabilizing resistor; the coplanar formation is located on the upper surface of the through-hole dielectric layer, and is interconnected with the bottom collector metal layer of the resonant tunneling diode, and does not contact the integrated antenna; the first metal through hole is set through the boss and is located between the feed line and the top collector metal layer of the resonant tunneling diode; the second metal through hole is set through the through-hole dielectric layer and is located on the side of the boss, between the feeding formation and the coplanar formation.

[0020] Furthermore, the resonant tunneling diode is an InP-based RTD or a GaN-based RTD.

[0021] Furthermore, the integrated antenna is a slot antenna, a rectangular patch antenna, a bowtie patch antenna, a patch antenna loaded with a microcavity resonator, a cavity-backed patch antenna or a helical antenna.

[0022] Furthermore, the material of the partially reflective metasurface bottom supporting layer and the transmissive metasurface bottom supporting layer is SiO2, SiN (Si3N4), SiON or BCB (Benzocyclobuten).

[0023] Furthermore, the material of the partially reflective metasurface interlayer dielectric layer and the transmissive metasurface interlayer dielectric layer is Rogers5880.

[0024] Furthermore, the material of the partially reflective metasurface single-layer middle dielectric layer and the transmissive metasurface single-layer middle dielectric layer is FR-25 or FR-epoxy.

[0025] Furthermore, the material of the partially reflective metasurface single-layer bottom metal layer, the partially reflective metasurface single-layer top metal layer, the transmissive metasurface single-layer bottom metal layer and the transmissive metasurface single-layer top metal layer is Au.

[0026] Furthermore, by changing the distance between the reflective surface array and the coplanar stratum, the reflection phase of the multiple reflected waves between the partial reflective metasurface and the resonant tunneling diode radiation source is adjusted to achieve the in-phase superposition of the multiple reflected waves, which are then converted into collimated terahertz waves.

[0027] Furthermore, by changing the array scale of the reflective surface array, the collimation performance of multiple reflected waves between the partially reflective metasurface and the resonant tunneling diode radiation source can be adjusted.

[0028] Furthermore, by changing the distance between the transmission surface array and the reflection surface array, the phase adjustment of the main polarization electric field of the collimated terahertz wave is achieved.

[0029] Furthermore, by optimizing the specific structure of the transmissive metasurface single-layer structure, the spatial phase delay between the transmission surface array and the reflection surface array can be regulated, thereby controlling the spatial superposition of collimated terahertz waves.

[0030] Furthermore, the spatial superposition of collimated terahertz waves can be enhanced by changing the array scale of the transmission surface array.

[0031] Furthermore, by changing the values ​​of N and M, the terahertz wave reflection and transmission performance of the terahertz resonant tunneling diode radiation source of the integrated partially reflective transmission metasurface can be adjusted.

[0032] The beneficial effects of the present invention are:

[0033] 1. The present invention proposes a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface, which uses a single resonant tunneling diode radiation source radiating from the air side as the radiation source, integrates a partially reflective metasurface above it to form a low-profile reflective microcavity, and collimates and enhances the terahertz waves radiated by the resonant tunneling diode radiation source, thereby achieving a larger output radiation power of a single resonant tunneling diode radiation source; then, a transmissive metasurface is integrated above the partially reflective metasurface to adjust the spatial phase delay of the collimated transmissive terahertz waves, thereby achieving in-phase superposition of terahertz waves, and finally achieving power synthesis;

[0034] 2. The present invention only uses a single resonant tunneling diode radiation source and sets a large-area coplanar stratum on the top of the resonant tunneling diode radiation source, which can ensure the consistency of the incident wave entering the transmission metasurface, thereby realizing the power synthesis of the terahertz wave and avoiding the problem of difficulty in ensuring unit consistency in the traditional array synthesis method where each unit needs to integrate RTO. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A front cross-sectional view of a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface provided in Example 1 of the present invention;

[0036] Figure 2 It is a front cross-sectional view of the terahertz coplanar resonant tunneling diode radiation source in Example 1 of the present invention;

[0037] Figure 3 A three-dimensional perspective view of a terahertz coplanar resonant tunneling diode radiation source in Example 1 of the present invention;

[0038] Figure 4Schematic diagram of the structure of the partially reflective metasurface in Example 1 of the present invention;

[0039] Figure 5 Schematic diagram of the structure of the transmissive metasurface in Example 1 of the present invention;

[0040] Figure 6 A schematic diagram of the working principle of a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface provided in Example 1 of the present invention;

[0041] Figure 7 Radiation gain patterns of the terahertz coplanar resonant tunneling diode radiation source (a) and the terahertz resonant tunneling diode radiation source (b) integrated with a partially reflective and transmissive metasurface provided in Example 1 of the present invention;

[0042] Figure 8 Schematic diagram of the structure of a transmissive metasurface unit in Example 2 of the present invention;

[0043] The descriptions of the symbols in the accompanying drawings are as follows:

[0044] 1: substrate; 2: terahertz coplanar resonant tunneling diode radiation source; 3: partially reflective metasurface; 4: transmissive metasurface; 5: resonant tunneling diode; 6: through-hole dielectric layer; 7: feed line; 8: feed stratum; 9: stabilizing resistor; 10: first metal through hole; 11: second metal through hole; 12: passivation layer; 13: coplanar stratum; 14: integrated antenna; 15: reflective surface array; 16: partially reflective metasurface bottom support layer; 17: partially reflective metasurface unit; 18: partially reflective metasurface single-layer structure; 19: partially reflective metasurface interlayer dielectric layer; 20: Partially reflective metasurface single-layer bottom metal layer; 21: partially reflective metasurface single-layer middle dielectric layer; 22: partially reflective metasurface single-layer top metal layer; 23: transmission surface array; 24: transmission metasurface bottom support layer; 25: transmission metasurface unit; 26: transmission metasurface single-layer structure; 27: transmission metasurface interlayer dielectric layer; 28: transmission metasurface single-layer bottom metal layer; 29: transmission metasurface single-layer middle dielectric layer; 30: transmission metasurface single-layer top metal layer; 31: multiple reflection waves; 32: collimated terahertz waves; 33: transmission terahertz waves. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] Example 1

[0048] This embodiment provides a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmission metasurface, the structure of which is as follows: Figure 1 As shown, it includes a substrate 1, and a terahertz coplanar resonant tunneling diode radiation source 2, a partially reflective metasurface 3 and a transmissive metasurface 4 which are sequentially stacked on the substrate 1.

[0049] The structure of the terahertz coplanar resonant tunneling diode radiation source 2 is as follows: Figure 2 and Figure 3 As shown, it includes a resonant tunneling diode 5, a through-hole dielectric layer 6, a feed line 7, a feed ground layer 8, a stabilizing resistor 9, a first metal through hole 10, a second metal through hole 11, a passivation layer 12, a coplanar ground layer 13 and an integrated antenna 14.

[0050] Among them, the feed line 7, the feed formation 8 and the stabilizing resistor 9 are located on the upper surface of the substrate 1, the feed line 7 and the feed formation 8 are not in contact with each other, and the stabilizing resistor 9 is located in a groove formed between the feed line 7 and the feed formation 8; the center of the substrate 1 has a boss, and the resonant tunneling diode 5 is located on the upper surface of the boss; the passivation layer 12 is located around the upper surface of the resonant tunneling diode 5; the integrated antenna 14 is located on the upper surface of the passivation layer 12 and is interconnected with the top collector metal layer of the resonant tunneling diode 5; the through-hole dielectric layer 6 is located between the feed line 7, the feed formation 8 and the stabilizing resistor 9; the coplanar stratum 13 is located on the upper surface of the through-hole dielectric layer 6, and is interconnected with the bottom collector metal layer of the resonant tunneling diode 5, and has no contact with the integrated antenna 14; the first metal through hole 10 is set through the boss, and is located between the feed line 7 and the top collector metal layer of the resonant tunneling diode 5; there are two second metal through holes 11, which are set through the through-hole dielectric layer 6 and are respectively located on both sides of the boss, between the feeding stratum 8 and the coplanar stratum 13; the resonant tunneling diode 5 is specifically an InP-based RTD; the integrated antenna 14 is specifically a rectangular patch antenna.

[0051] Furthermore, the process flow of the terahertz coplanar resonant tunneling diode radiation source 2 is as follows:

[0052] The substrate 1 is etched by wet or dry method to form a boss at the center of the substrate 1, and a resonant tunneling diode 5 is prepared on the upper surface of the boss; a resist is coated on the surface of the resonant tunneling diode 5, and the substrate 1 is etched by wet or dry method to the thickness of the through-hole dielectric layer 6; a feed line 7 and a feed stratum 8 are prepared by vapor deposition on the upper surface of the etched substrate 1 by electron beam evaporation process, and a groove is formed between the two; a stabilizing resistor 9 is prepared inside the groove by thin film sputtering or evaporation deposition process; a first metal through hole 10 and a second metal through hole 11 are formed on the upper surface of the feed line 7 and the feed stratum 8 respectively by photoresist exposure, and then a metal is sputtered or evaporated by electron beam evaporation process to form the first metal through hole 10 and the second metal through hole 11; the first metal The top of the through hole 10 is interconnected with the top collector metal layer of the resonant tunneling diode 5; a through hole dielectric layer 6 is prepared on the surfaces of the substrate 1, the feed line 7, the feed formation 8, the stabilizing resistor 9, the first metal through hole 10 and the second metal through hole 11 by a deposition process; a passivation layer 12 is prepared around the upper surface of the resonant tunneling diode 5 by a deposition process; a coplanar formation 13 is prepared on the upper surface of the through hole dielectric layer 6 and around the passivation layer 12 by an electron beam evaporation process; an integrated antenna 14 is prepared on the upper surface of the passivation layer 12 by an electron beam evaporation process, so that it is interconnected with the top collector metal layer of the resonant tunneling diode 5; the coplanar formation 13 is interconnected with the top of the second metal through hole 11 and is interconnected with the bottom collector metal layer of the resonant tunneling diode 5.

[0053] like Figure 4 As shown, the partially reflective metasurface 3 includes a reflective surface array 15 and a partially reflective metasurface bottom supporting layer 16 located around the bottom of the reflective surface array 15 .

[0054] The partially reflective metasurface bottom support layer 16 is a rectangular annular wall, which is used to support the reflective surface array 15 above the terahertz coplanar resonant tunneling diode radiation source 2, and the material is SiO2.

[0055] The reflective surface array 15 includes 4×4 periodically arranged partially reflective metasurface units 17; each partially reflective metasurface unit 17 is formed by alternatingly stacking 2 layers of partially reflective metasurface single-layer structures 18 and 1 layer of partially reflective metasurface interlayer dielectric layer 19; the partially reflective metasurface single-layer structure 18 includes a partially reflective metasurface single-layer bottom metal layer 20, a partially reflective metasurface single-layer middle dielectric layer 21 and a partially reflective metasurface single-layer top metal layer 22 stacked in sequence; wherein, the material of the partially reflective metasurface interlayer dielectric layer 19 is FR-epoxy; the partially reflective metasurface single-layer bottom metal layer 20 is a rectangular ring-shaped metal layer, the partially reflective metasurface single-layer top metal layer 22 is a rectangular metal layer, and the materials of the partially reflective metasurface single-layer bottom metal layer 20 and the partially reflective metasurface single-layer top metal layer 22 are Au; the material of the partially reflective metasurface single-layer middle dielectric layer 21 is Rogers5880.

[0056] like Figure 5 As shown, the transmissive metasurface 4 includes a transmissive surface array 23 and a transmissive metasurface bottom supporting layer 24 located around the bottom of the transmissive surface array 23 .

[0057] The transmissive metasurface bottom support layer 24 is a rectangular annular wall, which is used to support the transmissive surface array 23 above the reflective surface array 15, and the material is SiO2.

[0058] The transmission surface array 23 includes 4×4 periodically arranged transmission metasurface units 25; each transmission metasurface unit 25 is formed by alternatingly stacking 2 layers of transmission metasurface single-layer structures 26 and 1 layer of transmission metasurface interlayer dielectric layer 27; the transmission metasurface single-layer structure 26 includes a transmission metasurface single-layer bottom metal layer 28, a transmission metasurface single-layer middle dielectric layer 29 and a transmission metasurface single-layer top metal layer 30 stacked in sequence; wherein, the material of the transmission metasurface interlayer dielectric layer 27 is FR-epoxy; the transmission metasurface single-layer bottom metal layer 28 and the transmission metasurface single-layer top metal layer 30 are both cross-shaped metal layers, and the material is Au; the material of the transmission metasurface single-layer middle dielectric layer 29 is Rogers5880.

[0059] In this embodiment, in order to improve the transmittance, in the two-layer transmissive supersurface single-layer structure 26, the transmissive supersurface single-layer top metal layer 30 of the transmissive supersurface single-layer structure 26 located at the bottom is omitted, and the transmissive supersurface single-layer bottom metal layer 28 of the transmissive supersurface single-layer structure 26 located at the top is omitted.

[0060] The working principle of the terahertz resonant tunneling diode radiation source integrated with a partially reflective transmission metasurface proposed in this embodiment is as follows:

[0061] like Figure 6As shown, the terahertz coplanar resonant tunneling diode radiation source 2 located above the substrate 1 radiates terahertz waves, which are reflected by the partially reflective metasurface 3, so that the terahertz waves are reflected multiple times in the cavity formed between the terahertz coplanar resonant tunneling diode radiation source 2 and the partially reflective metasurface 3, and the multiple reflected waves 31 are superimposed in phase and finally converted into collimated waves.

[0062] The height of the partially reflective metasurface bottom support layer 16 is h r , so the reflection resonance of the partially reflective metasurface 3 satisfies:

[0063]

[0064] In the formula, represents the reflection phase of the partially reflective metasurface 3, represents the reflection phase of the coplanar formation 13, k represents an integer, and λ0 represents the free space wavelength.

[0065] Furthermore, according to the reflection phase of the coplanar stratum 13 being -180°, The height h of the bottom support layer 16 of the partially reflective metasurface can be obtained: r for

[0067] When the height of the bottom support layer 16 of the partially reflective metasurface When , the normal direction of the partially reflective metasurface 3 can obtain the maximum power. At this time, the terahertz wave emitted by the terahertz coplanar resonant tunneling diode radiation source 2 is converted into a collimated terahertz wave 32 by the partially reflective metasurface 3.

[0068] The transmissive metasurface 4 adjusts the spatial phase delay of the collimated terahertz wave 32 to achieve the superposition of the transmitted terahertz wave 33 in space, and finally realizes power synthesis.

[0069] The height of the bottom support layer 24 of the transmissive metasurface is h t , the transmission phase required by the transmissive metasurface unit 25 for

[0071] In the formula, is the spatial phase delay, is the phase in the main polarization direction, m×n represents the array scale of the transmissive metasurface 3; wherein the spatial phase delay for

[0073] In the formula, p x With p y is the number of cycles in the x-direction and y-direction, θ is the direction angle perpendicular to the xOy plane, ψ is the direction angle of the xOy plane; k0 is the wave number of the center frequency; is the phase constant.

[0074] Furthermore, by adjusting the arrangement of the transmission metasurface units 25, the power synthesized transmission terahertz wave 33 can be controlled.

[0075] Figure 7 The radiation gain pattern of the terahertz coplanar resonant tunneling diode radiation source (a) and the terahertz resonant tunneling diode radiation source (b) with integrated partially reflective transmissive metasurface provided in this embodiment, when operating at 340 GHz, according to Figure 7 (a), it can be seen that the maximum radiation direction of the terahertz coplanar resonant tunneling diode radiation source 2 is toward the air side, and the power gain is -2.2dBi; and according to Figure 7 From (b), it can be seen that the maximum radiation direction of the terahertz resonant tunneling diode radiation source integrated with the partially reflective transmissive metasurface is also toward the air side, but the power gain is increased to 4.5dBi, indicating that the terahertz resonant tunneling diode radiation source integrated with the partially reflective transmissive metasurface proposed in this embodiment can obtain a power synthesis effect similar to that of the traditional array synthesis method.

[0076] Example 2

[0077] This embodiment provides a terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface. The structure is different from that of Embodiment 1 only in that the specific structure of the transmissive metasurface unit 25 is adjusted.

[0078] Specifically, Figure 8 As shown, the transmissive metasurface single-layer bottom metal layer 28 and the transmissive metasurface single-layer top metal layer 30 are both adjusted to rectangular metal layers with a cross-shaped hollow structure inside, and the material is still Au.

[0079] The other structures and working principles are the same as those in Example 1.

[0080] The above embodiments only illustrate the principles and advantages of the present invention, and are not intended to limit the present invention. They are only intended to help understand the principles of the present invention. The protection scope of the present invention is not limited to the above configurations and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the disclosed technology without departing from the essence of the present invention, but they are still within the protection scope of the present invention.

Claims

1. A terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface, characterized in that: It includes a substrate, and a resonant tunneling diode radiation source, a partially reflective metasurface, and a transmissive metasurface sequentially stacked on the substrate; The top of the resonant tunneling diode radiation source has a large-area coplanar stratum; The partially reflective metasurface includes a reflective surface array and a partially reflective metasurface bottom support layer located around the bottom of the reflective surface array; The transmissive metasurface includes a transmissive surface array and a transmissive metasurface bottom supporting layer located around the bottom of the transmissive surface array.

2. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to claim 1, characterized in that: The reflective surface array includes a plurality of periodically arranged partially reflective metasurface units, each of which is formed by alternatingly stacking N+1 layers of partially reflective metasurface single-layer structures and N layers of partially reflective metasurface interlayer dielectric layers, where N is a positive integer.

3. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to claim 2, characterized in that: The partially reflective supersurface single-layer structure comprises a partially reflective supersurface single-layer bottom metal layer, a partially reflective supersurface single-layer middle dielectric layer and a partially reflective supersurface single-layer top metal layer stacked in sequence.

4. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to claim 1, characterized in that: The transmission surface array includes a plurality of periodically arranged transmission metasurface units, each of which is formed by alternately stacking M+1 layers of transmission metasurface single-layer structures and M layers of transmission metasurface interlayer dielectric layers, where M is a positive integer.

5. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to claim 4, characterized in that: The transmissive supersurface single-layer structure comprises a transmissive supersurface single-layer bottom metal layer, a transmissive supersurface single-layer middle dielectric layer and a transmissive supersurface single-layer top metal layer stacked in sequence.

6. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to claim 5, characterized in that: The transmissive supersurface single-layer bottom metal layer or the transmissive supersurface single-layer top metal layer in the transmissive supersurface single-layer structure may be omitted, but both cannot be omitted at the same time.

7. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to claim 1, characterized in that: The resonant tunneling diode radiation source also includes a resonant tunneling diode, a through-hole dielectric layer, a feed line, a feed ground layer, a stabilizing resistor, a first metal through hole, a second metal through hole, a passivation layer and an integrated antenna; Among them, the feed line, the feeding formation and the stabilizing resistor are located on the upper surface of the substrate, the feed line and the feeding formation do not contact each other, and the stabilizing resistor is located in the groove formed between the feed line and the feeding formation; there is a boss at the center of the substrate, and the resonant tunneling diode is located on the upper surface of the boss; the passivation layer is located around the upper surface of the resonant tunneling diode; the integrated antenna is located on the upper surface of the passivation layer and is interconnected with the top collector metal layer of the resonant tunneling diode; the through-hole dielectric layer is located above the feed line, the feeding formation and the stabilizing resistor; the coplanar formation is located on the upper surface of the through-hole dielectric layer, and is interconnected with the bottom collector metal layer of the resonant tunneling diode, and does not contact the integrated antenna; the first metal through hole is set through the boss and is located between the feed line and the top collector metal layer of the resonant tunneling diode; the second metal through hole is set through the through-hole dielectric layer and is located on the side of the boss, between the feeding formation and the coplanar formation.

8. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to any one of claims 1 to 7, characterized in that: By changing the distance between the reflection surface array and the coplanar stratum, the reflection phase of the multiple reflected waves between the partially reflective metasurface and the resonant tunneling diode radiation source is adjusted to achieve the in-phase superposition of the multiple reflected waves, and then convert them into collimated terahertz waves; by changing the array scale of the reflection surface array, the collimation performance of the multiple reflected waves between the partially reflective metasurface and the resonant tunneling diode radiation source can be adjusted.

9. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to any one of claims 1 to 7, characterized in that: By changing the distance between the transmission surface array and the reflection surface array, the phase adjustment of the main polarization electric field of the collimated terahertz wave is achieved; by optimizing the specific structure of the transmission metasurface single-layer structure, the spatial phase delay between the transmission surface array and the reflection surface array is controlled, thereby controlling the spatial superposition of the collimated terahertz wave; by changing the array scale of the transmission surface array, the spatial superposition of the collimated terahertz wave is enhanced.

10. The terahertz resonant tunneling diode radiation source integrated with a partially reflective transmissive metasurface according to any one of claims 1 to 7, characterized in that: By changing the values ​​of N and M, the terahertz wave reflection and transmission performance of the terahertz resonant tunneling diode radiation source of the integrated partially reflective transmission metasurface can be adjusted.

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