Transverse resonant coupling high-voltage isolation type converter

Abstract

The invention discloses a high-voltage isolated converter system based on CMOS (complementary metal oxide semiconductor) transverse resonant coupling, which relates to the field of high-voltage level converters and comprises a transmission line module, an emitter module, a receiver module and a bonding wire isolation structure. The transmission line adopts multi-resonator transverse coupling, and the withstand voltage is improved through gap distribution; the transmitter is integrated with a complementary negative transconductance oscillator, and high-speed signal modulation is realized by using a transmission line inductor; and the receiver adopts a fully differential radio frequency detector and a feedback amplification circuit, so that high-sensitivity signal restoration is realized. The system is based on a standard CMOS (Complementary Metal Oxide Semiconductor) process, has the advantages of 800V isolation capability, strong anti-interference performance and low cost, and is suitable for a high-voltage electrical system of an electric vehicle. Fields.

Description

Technical Field

[0001] The invention relates to the field of high-voltage level converters, and in particular to a transverse resonant coupled high-voltage isolation converter. Background Art

[0002] The electrical system of electric vehicles faces many new challenges, among which the isolation problem between different voltage domains is particularly prominent. Since the power system, battery management system, on-board electronic equipment, etc. of electric vehicles involve circuits of various voltage levels, in order to ensure the safe and stable operation of the system, reliable electrical isolation must be achieved between these different voltage domains to prevent current leakage, electrical interference and other problems. At present, commonly used isolation technologies such as magnetic coupling, capacitive coupling and optical coupling have obvious limitations in electric vehicles. Although magnetic coupling technology can achieve higher isolation voltage, it is large in size and heavy in weight, which is a major disadvantage for electric vehicles with extremely high space and weight requirements. It will increase the overall burden of the vehicle and affect the cruising range. Capacitive coupling technology has limited signal transmission capabilities at high frequencies, is sensitive to parasitic capacitance, and is easily interfered with, making it difficult to meet the complex electrical environment requirements of electric vehicles. Optical coupling technology has problems such as slow response speed, narrow bandwidth, and unstable performance over time and temperature, which cannot meet the requirements of electric vehicles for high-speed and reliable communication. In addition, these traditional technologies are also difficult to achieve ideal conditions in terms of integration and cost, which is not conducive to the large-scale production and cost control of electric vehicles.

[0003] Electric vehicles are increasingly in need of more advanced and efficient isolation technology. This technology must not only meet the high-voltage isolation requirements, have high reliability and anti-interference capabilities, but also be miniaturized and lightweight to adapt to the compact space layout and pursuit of driving range of electric vehicles. At the same time, in order to reduce production costs and improve product competitiveness, new isolation technologies should be easy to integrate into existing semiconductor manufacturing processes to reduce additional production links and costs. Based on the above reasons, the present invention designs a transverse resonant coupled high-voltage isolated converter. Summary of the invention

[0004] The purpose of the present invention is to solve the problems in the prior art and to propose a transverse resonant coupled high voltage isolated converter.

[0005] A transverse resonant coupled high voltage isolated converter, comprising:

[0006] A transmission line system, the transmission line system comprising a plurality of transversely coupled resonators, dielectrics being filled between adjacent resonators, and high voltage isolation performance being controlled by adjusting the spacing and number of resonators, the resonator comprising a metal loop and a MIM capacitor series structure;

[0007] A transmitter, which is a low-end chip, adopts a complementary negative transconductance feedback oscillator, uses the primary inductance in the transmission line system as the inductance element of the LC resonant circuit, and generates negative conductance to compensate the input conductance through a PMOS-NMOS cross-coupling pair;

[0008] Receiver, the receiver is a high-end chip, the receiver includes a radio frequency detector and a signal amplification circuit, the radio frequency detector is used as the front end of the receiver, the radio frequency detector adopts a cross-coupled differential pair, and realizes signal amplification and conversion through a current amplifier and a feedback system.

[0009] In the above-mentioned transverse resonant coupled high voltage isolated converter, the transmission line system includes the following three modules:

[0010] Resonator,The resonator is composed of a metal loop and a MIM capacitor in series;

[0011] Bonding wire connection, wherein the low-end chip is connected to the high-end chip via bonding wires;

[0012] A step-up transformer is the last structure of the receiver input terminal connected to the transmission line link. The step-up transformer is placed at the output end of the transmission line to reduce the receiver's gain requirement and provide a fully differential signal for the receiver.

[0013] In the above-mentioned transverse resonant coupled high-voltage isolated converter, the boost transformer adopts a solenoid structure and constitutes a center-tapped solenoid differential boost transformer.

[0014] In the above-mentioned transverse resonantly coupled high-voltage isolated converter, the RF detector stage of the receiver module adopts a common gate configuration, the input impedance is matched with the output impedance of the transmission line through capacitor tuning, and the RF signal envelope is detected through a full-wave rectified differential pair.

[0015] In the above-mentioned lateral resonantly coupled high-voltage isolated converter, the receiver is integrated with the high-voltage gate driver.

[0016] In the above-mentioned lateral resonant coupled high voltage isolated converter, the converter is manufactured based on the ONC25BCD process, the lateral spacing of the metal loops of the transmission line resonator is defined by the photolithography layout, and the oxide thickness is independent of the interlayer dielectric thickness.

[0017] In the above-mentioned transverse resonantly coupled high-voltage isolated converter, the transmitter modulates the input signal by generating an RF voltage with a frequency of 2.8 GHz, and then the RF signal is coupled to the low-voltage end of the transmission line system and propagates to the high-voltage end through the transmission line system. The receiver connected to the high-voltage end of the transmission line system receives the RF signal and converts it back into a logic signal corresponding to the transmitter input signal.

[0018] In the above-mentioned transverse resonant coupled high-voltage isolated converter, the center-tapped solenoid differential transformer includes an upper metal winding and a lower metal winding, the lower metal winding is connected in series with the upper metal winding, the upper metal winding includes a 3-micron top metal layer, the lower metal winding includes a metal layer two and a metal layer three and the two are used in parallel to reduce parasitic resistance, the internal metal layer is thinner than the top metal layer, the center tap of the transformer is connected through a metal layer one, the resistance of the layer is reduced by widening the wire, and a metal interconnect layer is inserted between the metal layers. .

[0019] Compared with the prior art, the present invention has the following advantages:

[0020] 1. Innovative coupling technology: Abandoning traditional vertical transformers or high-voltage capacitors, CMOS lateral resonant coupling technology is adopted. The lateral spacing between the resonant structures on the chip is used to achieve current isolation. This method is groundbreaking in the application of inter-chip communication. By adjusting the spacing and number of resonators, the high-voltage isolation performance can be flexibly controlled, which improves the reliability and integration of the isolator.

[0021] 2. Optimized transmission line design: The transmission line consists of adjacently placed coupled resonators with dielectrics in between. This structure not only enhances and controls HV isolation, but also distributes the potential difference on both sides of the isolator over multiple gaps, improving isolation capability. Resonant coupling enhances signal coupling and reduces signal attenuation when communicating between adjacent resonators, while the narrow bandwidth transfer function improves the system's noise immunity.

[0022] 3. Unique transmitter design: The transmitter adopts complementary negative G M The innovation of the oscillator is that the primary inductance of the transmission line is used as the inductance element of the LC resonant circuit, avoiding the use of additional on-chip inductors, simplifying the design and reducing the chip area. The negative conductance is generated by the PMOS-NMOS cross-coupling pair to compensate the input conductance of the output LC resonant circuit, thereby improving the performance of the oscillator.

[0023] 4. Low-power and high-sensitivity receiver design: A new RF detector is designed as the front end of the receiver. Compared with the traditional low-noise amplifier (LNA), this RF detector has extremely low standby current consumption and high sensitivity, meeting the needs of low-power applications. A cross-coupled differential pair is used as the RF detector, and the signal is amplified and converted through a current amplifier and feedback system, which improves the receiver's ability to resist common-mode interference (CMTI). BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic structural diagram of a transmission unit in a transverse resonantly coupled high-voltage isolated converter proposed by the present invention.

[0025] Figure 2 This is a system block diagram of a transverse resonant coupled high-voltage isolated converter proposed by the present invention.

[0026] Figure 3 Layout for an isolated die-to-die converter.

[0027] Figure 4 This is a topological structure diagram of a transverse resonant coupled high-voltage isolated converter proposed by the present invention.

[0028] Figure 5 The present invention provides a layout arrangement and equivalent schematic diagram of resonators in a transverse resonantly coupled high-voltage isolated converter.

[0029] Figure 6 This is a schematic diagram of the bonding wire connection between the low-end chip and the high-end chip.

[0030] Figure 7 Schematic diagram of a center-tapped solenoid differential transformer.

[0031] Figure 8 The schematic diagram of the transmitter.

[0032] Fig. 9 This is a low-end chip layout diagram.

[0033] Fig.10 This is the receiver schematic.

[0034] Fig.11 Figure 2 is a block diagram of the RF detector in the first stage of the receiver.

[0035] Fig.12 This is the structure diagram of the RF detector of the second stage of the receiver. DETAILED DESCRIPTION

[0036] Reference Figure 1-12 This is a transverse resonant coupled high voltage isolated converter. The isolated converter uses ONC25BCD technology and transverse resonant coupling. Figure 1 Two laterally coupled inductors are shown, where the oxide thickness between the two inductors is not limited by the thickness of the interlayer dielectric (IMD) in ONC25BCD technology, but is determined by the horizontal spacing of the inductors determined by the layout, while the oxide thickness between the two laterally coupled inductors is not limited by the thickness of the interlayer dielectric (IMD) in ONC25BCD technology.

[0037] The block diagram of the isolated converter is shown in Figure 2As shown in Figure 1. The transmitter modulates the input signal by generating an RF voltage with a frequency of 2.8 GHz. This RF signal is then coupled to the low voltage end of the transmission line and propagates through the transmission line to the high voltage end. The receiver connected to the high voltage end of the transmission line receives the RF signal and converts it back into a logic signal corresponding to the transmitter input signal.

[0038] And by Figure 2 The basic concepts in Figure 3 An integrated die-to-die system prototype is shown. The system consists of two chips connected to each other by two bond wires. The transmit chip (low-side chip) is a low-voltage die that can be integrated with a controller. The receive chip (high-side chip) can be integrated with a high-voltage gate driver and can withstand high-voltage transients.

[0039] The magnetic coupling between the transmitter, the first resonator loop, and the inductor connected to the low-side bond pad transmits the oscillator signal to the bond pad of the low-side chip, while the bond wire transmits the signal from the low-side chip (transmitter) to the high-side chip (receiver), where the RF signal is coupled to the primary coil of the center-tapped step-up transformer through the second resonator loop. The transformer output, which resonates with the receiver input capacitor, delivers a differential signal to the receiver. To maximize common-mode transient immunity (CMTI), the receiver is designed with a fully differential topology.

[0040] Since the coupling between laterally placed structures is weaker than vertical coupling, a resonant coupling inductor implemented in the form of a metal loop is used to maximize the signal strength from the transmitter to the receiver. Generally speaking, for a weakly coupled transformer, the coupling coefficient between the primary and secondary coils is k, the equivalent inductance is L, the series resistance is R, and the quality factor is Q. The coupling coefficient of the transformer can be increased to greater than k by resonating with a parallel capacitor (C). The derivation process is:

[0041]

[0042] 2. Transmission line system

[0043] The topology of isolated converter is as follows Figure 4As shown in Figure 1, the design uses coupled resonators placed next to each other with the gap between them filled with dielectric. By adjusting the spacing between the resonators, the high-voltage isolation performance can be enhanced and can be controlled by the distance between the resonators and the number of gaps / resonators. Using multiple resonators can spread the potential difference on both sides of the isolator across multiple gaps, thereby improving the isolation capability and reliability of the isolator. Each dielectric gap between the components in the communication path can achieve additional voltage drop to achieve high electrical isolation. The capacitance between each component and the underlying silicon substrate and the adjacent components is designed so that when a high-voltage transient occurs between the transmitter and the receiver, the voltage can be more evenly distributed across the gaps.

[0044] Resonant coupling enables communication between adjacent resonator gaps, and the enhanced coupling effect reduces the attenuation of the input to output signal. In addition, the narrow bandwidth transfer function of the resonator improves the noise immunity of the system. Resonant elements have two additional advantages: they can filter out out-of-band noise sources, and based on the quality factor Q of the resonator, only a minimum number of cycles are required to produce a detectable signal. The higher the Q value, the more cycles are required. Therefore, even a single interfering pulse within the bandwidth of the resonator will be filtered out. Noise signals such as interfering pulses are almost impossible to meet both the frequency and minimum time conditions, which forms a very robust communication channel that is resistant to external noise.

[0045] The limitation of high-Q systems is that they increase the latency of the communication channel. The higher the Q, the longer the propagation delay. To minimize signal degradation, the resonant frequency of each resonant element must be precisely tuned.

[0046] Figure 4 The differential transformer used on the receiving end is also shown, which resonates with the transmit frequency and can suppress common mode noise. The use of a step-up transformer increases the voltage amplitude, thereby reducing the gain requirements of the receiver.

[0047] The design of a transmission line system is divided into three basic modules, including the following parts:

[0048] (1) Resonator

[0049] The resonator consists of a metal loop and a MIM capacitor in series. Its layout and equivalent circuit schematic are shown in the figure below. Figure 5 shown.

[0050] exist Figure 5 The resonant frequency of the circuit in b is as follows:

[0051]

[0052] In the resonant state, the input impedance of the capacitor in parallel with the inductor loop can be expressed as:

[0053]

[0054] If the quality factor Q of a resonant circuit is defined as:

[0055]

[0056] So:

[0057]

[0058] This shows the impedance transformation characteristic of the circuit. When the circuit resonates, the small resistance R will be transformed into a larger value R t .

[0059] Figure 5 The resonator structure shown has been optimized using an electromagnetic (EM) simulator for passive circuit modeling and analysis. The resulting values ​​of R, L, and C are listed in Table 1.

[0060] Table 1 Resonator characteristics.

[0061] parameter Numeric unit R 1.345 Ω L 588.8 PH C 5.602 PF <![CDATA[R t ]]> 75.62 Ω Q 7.371 - <![CDATA[f resonance ]]> 2.748 GHz

[0062] (2) Bonding wire connection

[0063] like Figure 3 As shown in the figure, the low-end chip is connected to the high-end chip through bonding wires. In order to simulate the performance of the transmission line in the design stage, the model of the bonding wire connection is also obtained through an electromagnetic (EM) simulator. The schematic diagram of the bonding wire is shown in Figure 6 shown.

[0064] (3) Center-tapped solenoid differential transformer

[0065] The receiver input is connected to the last structure of the transmission line link, i.e. Figure 3 and Figure 4 Center-tapped solenoid differential step-up transformer shown. Placing a center-tapped solenoid differential transformer at the output of the transmission line has two purposes: to reduce the gain requirements at the receiver and to provide a fully differential signal to the receiver.

[0066] Monolithic inductors usually take up the largest area share of the chip size. Therefore, designing a step-up transformer is challenging. To minimize the chip size, a solenoid structure is used to achieve the maximum voltage gain of the transformer. The advantage of the solenoid structure is that the transformer windings are arranged vertically, utilizing all the metal layers available in a given process.

[0067] Since the receiver input is designed to be differential in order to reject common-mode signals and thus enhance the system’s noise immunity, the center tap of the transformer is connected to the ground of the high-side chip, and the winding drives the source of the receiver input transistor.

[0068] like Figure 7 As shown in the figure on the left, the primary winding of the transformer is a single-turn inductor, and the secondary winding consists of two interconnected inductor coils, each with eight turns.

[0069] Figure 7 The figure on the right shows the transformer layout after removing the top metal layer of the upper inductor winding, indicating that the lower metal winding is connected in series with the upper metal winding, and the upper winding uses a 3-micron top metal layer; the lower winding uses metal 2 and metal 3 layers in parallel to reduce parasitic resistance, and the internal metal layer is thinner than the top metal layer. The center tap of the transformer is connected through the metal 1 layer, and the resistance of this layer is reduced by widening the wire. Metal interconnect layers (vias) are inserted between the metal layers.

[0070] To improve the output-to-input voltage ratio, the transformer needs to operate in a resonant state. From the simulation, it is found that a load capacitance of 195fF ensures that the system achieves the maximum voltage gain of 13.3V / V, which exceeds the turns ratio of the transformer 8.

[0071] 3. Transmitter

[0072] A complementary negative transconductance feedback (G M ) oscillator is used as the transmitter. The main advantage of this design concept is that the primary inductance of the transmission line is also used as the inductive element of the LC tank. A PMOS-NMOS cross-coupled pair produces a negative conductance to compensate the input conductance seen by the output LC tank. Since the PMOS or NMOS cross-coupled pair respectively produces an inductance equal to or A complementary PMOS-NMOS stage has the advantage of conductance:

[0073]

[0074] Therefore, the final conductance is the sum of the conductances of the parallel connected NMOS and PMOS cross-coupled pairs. Figure 8 The schematic diagram of the transmitter is shown. To turn the oscillator on and off according to the input signal (IN), two switches (M1, M4) are connected to the sources of the NMOS cross-coupled pair. The switches are driven unbalanced with a delay of 300 picoseconds to speed up the turn-on of the oscillator.

[0075] To minimize chip area, the oscillator transistor is placed below the first turn of the transmission line, which also forms the passive LC tank of the oscillator. Fig. 9 Figure a shows the layout of the low-end chip, highlighting the location of the oscillator transistor and the passive LC tank located above it. Fig. 9 Panel b shows the first turn of the transmission line with the MIM capacitor arrangement.

[0076] To operate at the optimum frequency (2.8GHz), a total capacitance of 15.94pF must be added in parallel with the primary inductance of the transmission line. The capacitance comes from two sources:

[0077] The first source of capacitance is the active core of the oscillator - four cross-coupled transistors. SPICE simulations show that its capacitance is 10pF.

[0078] The remaining 5.94pF is provided by MIM capacitors connected between the positive and negative branches of the oscillator. These MIM capacitors are placed in Fig. 9 b) Below the metal connection highlighted by the blue rectangle.

[0079] 4. Receiver

[0080] To explain how the circuit works, the receiver is divided into two stages. The transmission line connects to the first stage, which is the radio frequency (RF) input stage of the receiver. In the second stage, the received signal is amplified and converted into a logic signal.

[0081] Since an exact reconstruction of the RF signal is not necessary in this application, it is sufficient to implement only an RF detector, thus achieving very low current consumption.

[0082] Fig.10 The receiver shown uses a cross-coupled differential pair as an RF detector in the first stage and a current amplifier in the second stage. Instead of the typical common-source stage, this design can use a common-gate stage because the output impedance of the transmission line is significantly lower than the input impedance of the receiver.

[0083] The input impedance / capacitance is adjusted by connecting a capacitor between T1 / T2 and the CT terminal to match the resonant frequency of the receiver input stage with the resonator forming the transmission line. Figure 3 and Figure 4 As shown, a center-tapped transformer at the output of the transmission line is coupled to the RF detector of the receiver. The center tap is connected to the CT terminal.

[0084] The first stage of the receiver is the RF detector. Fig.11As shown in Figure 1. The nominal bias current of the RF detector stage is set by the current mirror (M1, M2, and M3) based on the reference current conducted through the IREF terminal. The M3 PMOS transistor provides the bias current to the M4 NMOS transistor, which in turn forms the bias voltage for the cross-coupled pair of M5 and M6. The balanced configuration of the RF detector stage ensures that the bias current is evenly distributed between M5 and M6 under quiescent conditions.

[0085] The RF detector input terminals are connected to the sources of M5 and M6, which are capacitively cross-coupled to their gates through capacitors (C3, C4), forming a full-wave rectified differential input pair, with M5 and M6 conducting the negative and positive half cycles of the received RF signal. This produces a full-wave rectified current at a frequency of 5.6GHz, twice the carrier frequency. The RC parasitics and finite frequency response of the M9 and M10 transistors provide a low-pass frequency response at the M9 drain node (N1). This low-pass response filters the received rectified current to provide an envelope current I ENV .

[0086] Since the input pair of the RF detector is cascaded by M9, the presence of the RF signal causes the current of M9 to drop from its static value (I Q ) to a total of I Q +I ENV . Compare the total current value of M9 with the static value I Q The comparison is done and the difference is amplified in the second stage.

[0087] The bias current of the RF detector is significantly lower compared to conventional low noise amplifier (LNA) designs because the current that is subsequently amplified in the second stage comes from the transmission line.

[0088] Since the cross-coupled pair of M5 and M6 forms a differential amplifier, any common-mode component of the signal on T1 and T2 will maintain a balanced bias current distribution while also maintaining the gate-source voltage (V GS ) remains unchanged; therefore, only the differential signal is amplified, resulting in a very ideal common-mode rejection ratio (CMTI) at the receiver.

[0089] The second stage of the receiver is as follows Fig.12 The reference current conducted by M10 (with a static value I Q ) is generated by the feedback system consisting of the M10, M11, M12, M13, and M14 transistors. This feedback system regulates the current in M10 to a value equal to the current conducted by M9 under quiescent conditions. Through the M11, M12, M13, and M14 feedback network transistors, the drain-source voltage (V DS ) is adjusted to I Q ×R3 plus M11's VGS By adopting this feedback system, the current flowing through M10 is exactly equal to the static current I flowing through the M9 cascode transistor. Q , so that the I ENV The envelope current is reduced to a minimum.

[0090] M10 V DS The voltage values ​​are adjusted to keep M9 and M10 in the saturation region in idle mode, which minimizes the parasitic capacitance coupled to the N1 node and thus reduces the propagation delay at the receiver.

[0091] To further improve receiver (RX) sensitivity and minimize power consumption in idle mode, the feedback network also adjusts the input transistors (M15, M16) of the current comparator to their threshold voltage. Higher RX sensitivity also reduces propagation delay because fewer RF input cycles are required for the voltage to rise above the RX detection level.

[0092] The DC characteristic of the reference current is provided by the RC filter (R1, C1) connected to the gate of M11. When receiving a signal, M9 conducts a current equal to I Q +I ENV The difference between the M9 current and the reference current is amplified by the current comparator in the second stage. The input of the current comparator is formed by the gates of M15 and M16. M1 is regulated to conduct I Q The current conducted by the M16 transistor is 2×I Q , because the size of M16 is designed to be twice that of M15. This configuration makes the output of the current comparator in a high state under static conditions (no RF detection).

[0093] When receiving an RF signal, the current of M15 increases due to the high-pass filter response formed by R2-C2, while the current of M16 remains at 2×I Q Therefore, the feedback network ensures that the current comparator always converts the current change (I ENV ) and the quiescent current value (I Q ) for comparison. The current amplification of the envelope signal is achieved through the M17 and M18 transistors and the R4 resistor. The R4 resistor makes the M17-M18 current mirror nonlinear, thereby amplifying the differential signal. Under static conditions, the voltage drop across the R4 resistor is I Q × R4. Adjust the value of R4 resistor so that the voltage drop can keep M17 in the saturation region. In this way, the current value through M17 will be mirrored to M18 with the same magnitude. When an RF signal is applied, I ENVThe current will increase the current through M17 and R4. The voltage drop across the R4 resistor will increase the gate-source voltage (VGS) of M17 and M18, causing the M17 and M18 transistors to enter the triode region.

[0094] The current-to-voltage conversion is done at the current comparator output stage formed by the M16 and M18 transistors. The voltage output of the current comparator is fed to an inverter (I1) to form the digital output. The inverter is then followed by a buffer inverter ( Fig.12 not shown) to provide driving capability for the input capacitor of the oscilloscope or the off-chip decoder circuit.

[0095] It is known from common technical knowledge that the present invention can be implemented by other embodiments that do not deviate from its spirit or essential features. Therefore, the above disclosed embodiments are only illustrative in all respects and are not exclusive. All changes within the scope of the present invention or within the scope equivalent to the present invention are included in the present invention.

Claims

1. A transverse resonant coupled high voltage isolated converter, characterized in that: include: A transmission line system, the transmission line system comprising a plurality of transversely coupled resonators, dielectrics being filled between adjacent resonators, and high voltage isolation performance being controlled by adjusting the spacing and number of resonators, the resonator comprising a metal loop and a MIM capacitor series structure; A transmitter, which is a low-end chip, adopts a complementary negative transconductance feedback oscillator, uses the primary inductance in the transmission line system as the inductance element of the LC resonant circuit, and generates negative conductance to compensate the input conductance through a PMOS-NMOS cross-coupling pair; The receiver is a high-end chip, comprising a radio frequency detector and a signal amplification circuit. The radio frequency detector serves as the front end of the receiver. The radio frequency detector adopts a cross-coupled differential pair and realizes signal amplification and conversion through a current amplifier and a feedback system.

2. The transverse resonant coupled high voltage isolated converter according to claim 1, characterized in that: The transmission line system includes the following three modules: Resonator,The resonator is composed of a metal loop and a MIM capacitor in series; Bonding wire connection, wherein the low-end chip is connected to the high-end chip via bonding wires; A step-up transformer is the last structure of the receiver input terminal connected to the transmission line link. The step-up transformer is placed at the output end of the transmission line to reduce the receiver's gain requirement and provide a fully differential signal for the receiver.

3. The transverse resonant coupled high voltage isolated converter according to claim 2, characterized in that: The step-up transformer adopts a solenoid structure and constitutes a center-tapped solenoid differential step-up transformer.

4. The transverse resonant coupled high voltage isolated converter according to claim 1, characterized in that: The RF detector stage of the receiver module adopts a common gate configuration, the input impedance is matched with the transmission line output impedance through capacitor tuning, and the RF signal envelope is detected through a full-wave rectified differential pair.

5. The transverse resonant coupled high voltage isolated converter according to claim 4, characterized in that: The receiver is integrated with a high voltage gate driver.

6. The transverse resonant coupled high voltage isolated converter according to claim 4, characterized in that: The converter is manufactured based on the ONC25BCD process, where the lateral spacing of the metal loops of the transmission line resonators is defined by the photolithographic layout and the oxide thickness is independent of the interlayer dielectric thickness.

7. The transverse resonant coupled high voltage isolated converter according to claim 6, characterized in that: The transmitter modulates the input signal by generating an RF voltage with a frequency of 2.8 GHz. Subsequently, the RF signal is coupled to the low-voltage end of the transmission line system and propagates to the high-voltage end through the transmission line system. The receiver connected to the high-voltage end of the transmission line system receives the RF signal and converts it back into a logic signal corresponding to the transmitter input signal.

8. The transverse resonant coupled high voltage isolated converter according to claim 6, characterized in that: The center-tapped solenoid differential transformer includes an upper metal winding and a lower metal winding, the lower metal winding is connected in series with the upper metal winding, the upper metal winding includes a 3-micron top metal layer, the lower metal winding includes metal layer two and metal layer three and the two are used in parallel to reduce parasitic resistance, the internal metal layer is thinner than the top metal layer, the center tap of the transformer is connected through metal layer one, the resistance of this layer is reduced by widening the wire, and a metal interconnection layer is inserted between each metal layer.

Images