Radio frequency switch, radio frequency front-end module and electronic equipment

Abstract

The invention discloses a radio frequency switch, a radio frequency front-end module and electronic equipment, the radio frequency switch comprises N transistors and at least one harmonic suppression module which are sequentially connected in series, and N is an integer greater than 1. The harmonic suppression module is connected between the two connection electrodes corresponding to the two transistors, and the harmonic suppression module is used for suppressing harmonic signals in the radio frequency signals passing through the radio frequency switch. Wherein the transistors are field effect transistors, and two connection electrodes corresponding to the two transistors are two bulk electrodes or two grid electrodes. According to the invention, the harmonic suppression module is not directly connected to the main radio frequency path (that is, the harmonic suppression module is not directly connected to the source electrode or the drain electrode of the field effect transistor), but is connected between the two body electrodes or the two grid electrodes, and the connection mode can prevent other harmonic signals generated by the harmonic suppression module from influencing the main radio frequency path. Therefore, the radio-frequency signal can be normally transmitted on the main radio-frequency path.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and more specifically, to a radio frequency switch, a radio frequency front-end module and an electronic device. Background Art

[0002] At present, RF front-end modules have been widely used in wireless communications, the Internet of Things, smart homes and other fields. They can process RF signals (for example, power amplification, modulation and demodulation, etc.) to complete the tasks of receiving and sending RF signals.

[0003] In the existing RF front-end module, the RF switch is an important component of the RF front-end module. It can be used to switch the transmission of RF signals in different frequency bands to ensure the normal operation of each chip and component in the RF front-end module. Alternatively, the RF switch can also be used in the tuning circuit to achieve tuning operations on the RF signal.

[0004] Specifically, the RF switch may include a plurality of transistors connected in series. When the RF signal passes through the RF switch, it is easy to cause the generation of harmonic signals (eg, second-order harmonics, third-order harmonics), thereby affecting the transmission quality of the RF signal. Summary of the invention

[0005] Embodiments of the present application provide a radio frequency switch, a radio frequency front-end module, and an electronic device.

[0006] According to the first aspect of the present application, an embodiment of the present application provides a radio frequency switch, which includes N transistors connected in series and at least one harmonic suppression module, where N is an integer greater than 1. The harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch. The transistor is a field effect transistor, and the two connection poles corresponding to the two transistors are two body poles or two gates.

[0007] The embodiment of the present application provides a radio frequency switch, in which a harmonic suppression module is connected between two connection poles corresponding to two transistors, and is used to suppress harmonic signals in radio frequency signals passing through the radio frequency switch. Specifically, the harmonic suppression module can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0008] Further, the transistors in the present application are field effect transistors, wherein the two connecting poles corresponding to the two transistors are two body poles or two gates. In some possible situations, the harmonic suppression module can be connected between the two body poles corresponding to the two field effect transistors. In other possible situations, the harmonic suppression module can be connected between the two gates corresponding to the two field effect transistors.

[0009] It should be noted here that in addition to generating the suppression signal, the harmonic suppression module itself also generates other harmonic signals (that is, harmonic signals other than the suppression signal). Since the harmonic suppression module in the present application is not directly connected to the main RF path (that is, not directly connected to the source or drain of the field effect tube), but is connected between two body poles or two gates, the above connection method can avoid the situation where other harmonic signals generated by the harmonic suppression module itself affect the main RF path, so as to ensure that the RF signal can be transmitted normally on the main RF path.

[0010] Here, taking the harmonic signal in the RF signal passing through the RF switch as the third harmonic signal as an example, the harmonic suppression module can generate a suppression signal with a phase opposite to the third harmonic signal (that is, an anti-phase signal of the third harmonic signal) to achieve the suppression effect on the third harmonic signal. In addition, the harmonic suppression module itself will also generate other harmonic signals (for example, fourth harmonic signals, fifth harmonic signals). Since the harmonic suppression module is not directly connected to the main RF path, the fourth harmonic signal and the fifth harmonic signal generated by the harmonic suppression module itself can be prevented from affecting the main RF path, thereby ensuring the transmission quality of the RF signal.

[0011] According to the second aspect of the present application, an embodiment of the present application further provides a radio frequency switch, which includes N transistors connected in series and at least one harmonic suppression module, where N is an integer greater than 1. The harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress harmonic signals in the radio frequency signal passing through the radio frequency switch. Wherein, the transistor is a bipolar transistor, and the two connection poles corresponding to the two transistors are two body poles or two base poles.

[0012] The embodiment of the present application provides a radio frequency switch, in which a harmonic suppression module is connected between two connection poles corresponding to two transistors, and is used to suppress harmonic signals in radio frequency signals passing through the radio frequency switch. Specifically, the harmonic suppression module can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0013] Further, the transistors in the present application are bipolar transistors, wherein the two connecting poles corresponding to the two transistors are two body poles or two base poles. In some possible situations, the harmonic suppression module can be connected between the two body poles corresponding to the two bipolar transistors. In other possible situations, the harmonic suppression module can be connected between the two base poles corresponding to the two bipolar transistors.

[0014] It should be noted here that in addition to generating the suppression signal, the harmonic suppression module itself also generates other harmonic signals (that is, harmonic signals other than the suppression signal). Since the harmonic suppression module in the present application is not directly connected to the main RF path (that is, not directly connected to the collector or emitter of the bipolar transistor), but is connected between two body poles or two bases, the above connection method can avoid the situation where other harmonic signals generated by the harmonic suppression module itself affect the main RF path, so as to ensure that the RF signal can be transmitted normally on the main RF path.

[0015] Here, taking the harmonic signal in the RF signal passing through the RF switch as the third harmonic signal as an example, the harmonic suppression module can generate a suppression signal with a phase opposite to the third harmonic signal (that is, an anti-phase signal of the third harmonic signal) to achieve the suppression effect on the third harmonic signal. In addition, the harmonic suppression module itself will also generate other harmonic signals (for example, fourth harmonic signals, fifth harmonic signals). Since the harmonic suppression module is not directly connected to the main RF path, the fourth harmonic signal and the fifth harmonic signal generated by the harmonic suppression module itself can be prevented from affecting the main RF path, thereby ensuring the transmission quality of the RF signal.

[0016] According to the third aspect of the present application, an embodiment of the present application further provides a radio frequency front-end module, which is provided with an antenna port for connecting an antenna; the radio frequency front-end module includes a plurality of first tuning branches connected in parallel. Each first tuning branch includes a first switch, and the first switch is provided with a first connection end for connecting the antenna port and a second connection end for grounding; the first switch includes N transistors and at least one harmonic suppression module, and the N transistors are sequentially connected in series between the first connection end and the second connection end, and N is an integer greater than 1. The harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the first switch. One of the harmonic suppression modules is connected to the connection pole of the first transistor in the direction from the first connection end of the first switch to the second connection end.

[0017] An embodiment of the present application provides a radio frequency front-end module, which includes a plurality of first tuning branches connected in parallel, wherein the first connection end of the first switch included in each first tuning branch is connected to the antenna port, and the second connection end of the first switch is grounded. Therefore, the first switch in this embodiment is a tuner switch (i.e., Tuner switch).

[0018] Specifically, the first switch includes N transistors and at least one harmonic suppression module, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the first switch. Specifically, the harmonic suppression module can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0019] Furthermore, N transistors are sequentially connected in series between the first connection end and the second connection end, and one harmonic suppression module is connected to the connection electrode of the first transistor in the direction from the first connection end of the first switch to the second connection end. Since the first connection end of the first switch is used to connect to one end of the RF port, the power of the RF signal at the first connection end is greater than the power of the RF signal at the second connection end. By arranging the harmonic suppression module close to the first connection end of the first switch, the present application can improve the suppression effect of the harmonic suppression module on the harmonic signal, thereby ensuring the transmission quality of the RF signal.

[0020] According to the fourth aspect of the present application, an embodiment of the present application further provides a radio frequency front-end module, which is provided with a signal port and an antenna port for connecting an antenna; the radio frequency front-end module includes a plurality of second tuning branches connected in parallel. Wherein, each second tuning branch includes a second switch, and the second switch is provided with a first connection end for connecting the antenna port and a second connection end for connecting the signal port; the second switch includes N transistors and at least one harmonic suppression module, and the N transistors are sequentially connected in series between the first connection end and the second connection end, and N is an integer greater than 1. The harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the second switch. One of the harmonic suppression modules is connected to the connection pole of the first transistor in the direction from the first connection end of the second switch to the second connection end.

[0021] An embodiment of the present application provides a radio frequency front-end module, which includes a plurality of second tuning branches connected in parallel, wherein the first connection end of the second switch included in each second tuning branch is connected to the antenna port, and the second connection end of the second switch is connected to the signal port. Therefore, the second switch in this embodiment is a radio frequency switch.

[0022] Specifically, the second switch includes N transistors and at least one harmonic suppression module, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the second switch. Specifically, the harmonic suppression module can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0023] Furthermore, N transistors are sequentially connected in series between the first connection end and the second connection end, and one harmonic suppression module is connected to the connection electrode of the first transistor in the direction from the first connection end of the second switch to the second connection end. Since the first connection end of the second switch is used to connect to one end of the RF port, the power of the RF signal at the first connection end is greater than the power of the RF signal at the second connection end. By arranging the harmonic suppression module close to the first connection end of the second switch, the present application can improve the suppression effect of the harmonic suppression module on the harmonic signal, thereby ensuring the transmission quality of the RF signal.

[0024] According to a fifth aspect of the present application, an embodiment of the present application further provides an electronic device, which includes the above-mentioned radio frequency switch, or the above-mentioned radio frequency front-end module. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 It is a schematic diagram of the structure of the radio frequency switch provided in the first embodiment of the present application.

[0027] Figure 2 This is another structural schematic diagram of the radio frequency switch provided in the first embodiment of the present application.

[0028] Figure 3 This is another structural schematic diagram of the radio frequency switch provided in the first embodiment of the present application.

[0029] Figure 4 yes Figure 1 A structural schematic diagram of a harmonic suppression module of a radio frequency switch is shown.

[0030] Figure 5 yes Figure 4 A structural schematic diagram of a first variable capacitance unit and a second variable capacitance unit in the harmonic suppression module is shown.

[0031] Figure 6 yes Figure 4 Another structural schematic diagram of the first variable capacitance unit and the second variable capacitance unit in the harmonic suppression module is shown.

[0032] Figure 7 yes Figure 1 Another structural schematic diagram of the harmonic suppression module of the RF switch is shown.

[0033] Figure 8 yes Figure 1 Another structural schematic diagram of the harmonic suppression module of the RF switch is shown.

[0034] Fig. 9 This is another structural schematic diagram of the radio frequency switch provided in the first embodiment of the present application.

[0035] Fig.10 This is another structural schematic diagram of the radio frequency switch provided in the first embodiment of the present application.

[0036] Fig.11 It is a schematic diagram of the structure of the radio frequency switch provided in the second embodiment of the present application.

[0037] Fig.12 This is another structural schematic diagram of the radio frequency switch provided in the second embodiment of the present application.

[0038] Fig.13 It is a structural diagram of the RF front-end module provided in an embodiment of the present application.

[0039] Fig.14 This is another structural schematic diagram of the RF front-end module provided in an embodiment of the present application.

[0040] Fig.15 It is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0042] See also Figure 1, the first embodiment of the present application provides a radio frequency switch 100, which may include N transistors 120 connected in series and at least one harmonic suppression module 140. Wherein, N is an integer greater than 1. Specifically, N may be equal to 6, 8, 9, 10, 12, 15, 20, and so on. In some possible embodiments, the developer may determine the value of N according to the voltage value at both ends of the radio frequency switch 100 and the withstand voltage value of a single transistor 120. For example, when the voltage value at both ends of the radio frequency switch 100 is 45V and the withstand voltage value of a single transistor 120 is 6V, then N may be 8. In other possible embodiments, the developer may determine the value of N according to the actual application scenario of the radio frequency switch 100. For example, when the radio frequency switch 100 is used as a switch in a receiving link or a transmitting link, the value of N may be greater than or equal to 6 and less than or equal to 9. For another example, when the radio frequency switch 100 is used as a tuner switch, the value of N may be greater than or equal to 10 and less than or equal to 20.

[0043] The harmonic suppression module 140 is connected between two connection electrodes 121 corresponding to two of the transistors 120, and is used to suppress the harmonic signal in the RF signal passing through the RF switch 100. Specifically, the harmonic suppression module 140 can generate a suppression signal with a phase opposite to the harmonic signal in the RF signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the RF signal.

[0044] Further, in Figure 1 In the embodiment shown, the transistor 120 is a field effect transistor, wherein the two connecting electrodes 121 corresponding to the two transistors 120 are two body electrodes Body or two gates Gate. Figure 1 In the embodiment shown, the harmonic suppression module 140 can be connected between two body electrodes corresponding to two field effect transistors. Figure 2 The harmonic suppression module 140 can be connected between two gates Gate corresponding to two of the field effect transistors.

[0045] It should be noted here that, in addition to generating the suppression signal, the harmonic suppression module 140 itself also generates other harmonic signals (that is, harmonic signals other than the suppression signal). Since the harmonic suppression module 140 in the present application is not directly connected to the main RF path (that is, not directly connected to the source or drain of the field effect tube), but is connected between two body poles or two gates, the above connection method can prevent other harmonic signals generated by the harmonic suppression module 140 itself from affecting the main RF path, so as to ensure that the RF signal can be transmitted normally on the main RF path.

[0046] Here, taking the harmonic signal in the RF signal passing through the RF switch 100 as a third harmonic signal as an example, the harmonic suppression module 140 can generate a suppression signal with a phase opposite to that of the third harmonic signal (that is, an anti-phase signal of the third harmonic signal) to achieve the suppression effect on the third harmonic signal. Specifically, when the third harmonic signal passes through the RF switch 100, a portion of the third harmonic signal will pass through the branch where the harmonic suppression module 140 is located, and phase shift will occur under the action of the harmonic suppression module 140 to generate the above-mentioned suppression signal. Specifically, the phase shift of a portion of the third harmonic signal can be greater than or equal to 170 degrees and less than or equal to 190 degrees. Of course, in an ideal case, the phase shift is equal to 180 degrees. When the suppression signal is combined with another part of the non-phase-shifted signal in the third harmonic signal, the two signals can cancel each other, thereby achieving the suppression effect on the third harmonic signal.

[0047] In addition, the harmonic suppression module 140 itself will also generate other harmonic signals (for example, fourth harmonic signals and fifth harmonic signals). Since the harmonic suppression module 140 is not directly connected to the main RF path, the fourth harmonic signal and fifth harmonic signal generated by the harmonic suppression module 140 itself can be prevented from affecting the main RF path, thereby ensuring the transmission quality of the RF signal.

[0048] It should be noted here that in the relevant technology, in order to suppress the harmonic signals in the RF signal, the researchers usually set a harmonic suppression unit between the gate and the drain of the field effect tube. And a resistor is connected in parallel between the gate and the drain of the transistor (for example: field effect tube) of the RF switch (that is, a resistor directly connected between the gate and the drain). In the case of adopting the above connection method, since the harmonic suppression unit itself will also generate other harmonic signals, other harmonic signals will enter the main RF path through the gate and drain connected to the harmonic suppression unit, resulting in the deterioration of other harmonics, thereby affecting the normal transmission of the RF signal.

[0049] In order to solve the above-mentioned problem, the inventors of the present application improved the connection position of the harmonic suppression module 140 and did not connect a resistor between the gate and the drain of the transistor (for example, field effect transistor) of the RF switch. This not only can suppress the harmonic signal generated by the RF switch, but also can avoid the situation where other harmonic signals generated by the harmonic suppression module 140 itself are transmitted to the main RF path, thereby ensuring the normal transmission of the RF signal.

[0050] Furthermore, in the related art, the parallel resistor between the gate and the drain is a common structure of the field effect tube. Therefore, when a harmonic suppression unit is provided between the gate and the drain, the original resistance network of the field effect tube will not be affected. In the structure of the RF switch 100 provided in the present application, when a harmonic suppression module 140 is provided between two body poles or two gates, no parallel resistor (that is, a resistor directly connected between two body poles or two gates) is provided between the two body poles or two gates to avoid the situation of destroying the original resistance network and ensure the discreteness between the structures.

[0051] In addition, when the harmonic suppression module 140 is disposed between two body electrodes or two gates, since no resistor is directly connected between the two body electrodes or two gates, the overall structure of the harmonic suppression module 140 is simpler and more compact.

[0052] The specific implementation of the RF switch 100 is described below.

[0053] In this embodiment, the RF switch 100 may be provided with a first connection terminal 102 and a second connection terminal 104, and N transistors 120 are sequentially connected in series between the first connection terminal 102 and the second connection terminal 104. The transistors 120 are field effect transistors, and specifically, in two adjacent field effect transistors, the source of one field effect transistor is connected to the drain of the other field effect transistor.

[0054] Exemplarily, transistor 120 may be a junction field effect transistor (JFET), a metal-oxide semiconductor field effect transistor (MOSFET), a high electron mobility transistor (HEMT), a pseudo high electron mobility transistor (PHEMT), etc. Of course, transistor 120 may also be other types of field effect transistors, which are not specifically limited in this embodiment. Optionally, transistor 120 may be formed on a conventional silicon substrate or on a silicon-on-insulator (SOI) substrate.

[0055] In this embodiment, the harmonic suppression module 140 is connected between two body electrodes Body or two gates Gate corresponding to two of the transistors 120, and is used to suppress harmonic signals in the RF signal passing through the RF switch 100. The specific connection position of the harmonic suppression module 140 can be flexibly adjusted by the R&D personnel based on the specific layout of the switch chip where the N transistors 120 are located, and this embodiment does not specifically limit it.

[0056] exist Figure 1 and Figure 2 In the illustrated embodiment, the harmonic suppression module 140 is connected between two connection electrodes 121 corresponding to two adjacent transistors 120. Since the voltage difference between the two connection electrodes 121 corresponding to two adjacent transistors 120 is small, the safety of the harmonic suppression module 140 can be ensured, and the breakdown caused by excessive voltage difference can be avoided.

[0057] In some other possible embodiments, the harmonic suppression module 140 may be connected between two connection electrodes 121 corresponding to two non-adjacent transistors 120. For example, when the voltage resistance performance of the harmonic suppression module 140 is good, one or more transistors 120 may be spaced between the two transistors 120 connected to the harmonic suppression module 140, so that the layout of the harmonic suppression module 140 in the RF switch 100 can be more flexible. Figure 3 There is another transistor 120 between the two transistors 120 connected to the harmonic suppression module 140, so that the specific connection position of the harmonic suppression module 140 is more flexible.

[0058] In some possible embodiments, when there are multiple harmonic suppression modules 140, the two transistors 120 connected to a portion of the harmonic suppression modules 140 may be two body electrodes, and the two transistors 120 connected to another portion of the harmonic suppression modules 140 may be two gate electrodes. Researchers may adjust the connection position of the harmonic suppression module 140 according to the actual layout of the RF chip 100, which is not specifically limited in this embodiment.

[0059] In at least one embodiment, at least one harmonic suppression module 140 may include a first harmonic suppression module and a second harmonic suppression module; the first harmonic suppression module is connected between two body electrodes corresponding to two of the transistors 120 , and the second harmonic suppression module is connected between two gate electrodes corresponding to any other two transistors 120 .

[0060] In at least one embodiment, at least one harmonic suppression module 140 may include a first harmonic suppression module and a second harmonic suppression module; the first harmonic suppression module is connected between two body electrodes corresponding to two of the transistors 120, and the second harmonic suppression module is connected between two body electrodes corresponding to any other two transistors 120;

[0061] In at least one embodiment, at least one harmonic suppression module 140 may include a first harmonic suppression module and a second harmonic suppression module; the first harmonic suppression module is connected between two gates corresponding to two of the transistors 120 , and the second harmonic suppression module is connected between two gates corresponding to any other two transistors 120 .

[0062] The specific implementation of the harmonic suppression module 140 is described below.

[0063] See also Figure 4 , wherein the two connecting electrodes 121 corresponding to the two transistors 120 may include a first connecting electrode 1212 and a second connecting electrode 1214. It is not difficult to understand here that the first connecting electrode 1212 and the second connecting electrode 1214 respectively correspond to the two connecting electrodes 121 of two different transistors 120. In order to facilitate the description of the specific connection position of the harmonic suppression module 140, this specification refers to one of the two connecting electrodes 121 as the “first connecting electrode” and the other as the “second connecting electrode”.

[0064] In this embodiment, the harmonic suppression module 140 may include a first varactor unit 1410 and a second varactor unit 1420. The first varactor unit 1410 and the second varactor unit 1420 are connected in series between the first connecting pole 1212 and the second connecting pole 1214. The polarity of one end of the first varactor unit 1410 used to connect to the first connecting pole 1212 and the polarity of one end of the second varactor unit 1420 used to connect to the second connecting pole 1214 are the same. That is, the first varactor unit 1410 and the second varactor unit 1420 in this embodiment are "reversely connected in series" between the first connecting pole 1212 and the second connecting pole 1214.

[0065] Specifically, when multiple transistors 120 between the first connection terminal 102 and the second connection terminal 104 are all turned on, there is a certain voltage difference between the two connection poles 121, and the voltage difference is simultaneously loaded on both ends of the first varactor unit 1410 and the second varactor unit 1420, so that the equivalent capacitance value of the first varactor unit 1410 and the second varactor unit 1420 can change with the voltage difference, thereby forming an adjustable capacitor that changes with the RF signal voltage, and the adjustable capacitor can generate the above-mentioned suppression signal.

[0066] In some possible embodiments, the harmonic suppression module 140 is provided with a control terminal 1401, and the control terminal 1401 is used to input a regulating voltage Vc. Figure 4 In the illustrated embodiment, the harmonic suppression module 140 may further include a first resistance unit 1430, one end of the first resistance unit 1430 is connected to the control end 1401, and the other end of the first resistance unit 1430 is connected to a common connection end 1403 formed by connecting the first variable capacitance unit 1410 and the second variable capacitance unit 1420. Specifically, the first resistance unit 1430 and the first variable capacitance unit 1410 and the second variable capacitance unit 1420 may jointly form an RC phase shift circuit to jointly generate the above-mentioned suppression signal.

[0067] Since the adjustment voltage Vc input at the control terminal 1401 can be applied to the first variable capacitance unit 1410 and the second variable capacitance unit 1420 respectively through the first resistance unit 1430, when the voltage value of the adjustment voltage Vc changes, the equivalent capacitance value of the first variable capacitance unit 1410 and the second variable capacitance unit 1420 can be flexibly adjusted to adjust the suppression effect of the harmonic signal, so as to increase the design flexibility of the RF switch 100. Exemplarily, the adjustment voltage Vc can be greater than or equal to 2.5V and less than or equal to 3.5V.

[0068] In some possible embodiments, the equivalent resistance value of the first resistance unit 1430 may be greater than or equal to 1 kilo-ohm. Therefore, the first resistance unit 1430 may be regarded as a large resistance, which can prevent the nonlinear distortion of the signal caused by the leakage of the RF signal from the control terminal 1401, thereby ensuring the normal transmission of the RF signal. Specifically, the first resistance unit 1430 may be a single resistor, or a resistance network formed by connecting multiple resistors in series or in parallel. The specific implementation of the first resistance unit 1430 is not limited in this embodiment.

[0069] In some possible embodiments, there are multiple harmonic suppression modules 140, and the regulated voltage Vc input by the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 is the same voltage. Exemplarily, the RF switch 100 can be integrated in a switch chip, and the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 can all be connected to the same power supply port on the switch chip, so that the circuit layout of the entire RF switch 100 is simpler and more compact. Specifically, the power supply port is used to connect an external power supply to provide the regulated voltage Vc.

[0070] In some other possible embodiments, the number of harmonic suppression modules 140 is multiple, and the regulating voltages Vc input by the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 are different, so that the suppression signal formed by each harmonic suppression module 140 can be adjusted independently, which can further improve the suppression effect of harmonic signals. Exemplarily, the RF switch 100 can be integrated in a switch chip, and the multiple control terminals 1401 corresponding to the multiple harmonic suppression modules 140 can be respectively connected to different power supply ports on the switch chip, so that the regulating voltages Vc input by the multiple control terminals 1401 are different. Specifically, different power supply ports are used to connect different external power supplies, and the voltage amplitudes of the regulating voltages Vc provided by the external power supplies are different. For example, the regulating voltages Vc can be 2.5V, 3V, 3.5V, etc.

[0071] In this embodiment, the first variable capacitance unit 1410 and the second variable capacitance unit 1420 can be implemented with the same structure, so that the normal operation of the harmonic suppression module 140 is not affected when the harmonic suppression module 140 is reversely connected.

[0072] See also Figure 5 , the first varactor unit 1410 may include a first diode 1412, and the second varactor unit 1420 may include a second diode 1421. Figure 5 As shown in part (a) of FIG. 1 , the anode of the first diode 1412 is connected to the anode of the second diode 1421, the cathode of the first diode 1412 is connected to the first connecting electrode 1212, and the cathode of the second diode 1421 is connected to the second connecting electrode 1214. Figure 5 As shown in part (b), the cathode of the first diode 1412 is connected to the cathode of the second diode 1421 , the anode of the first diode 1412 is connected to the first connecting electrode 1212 , and the anode of the second diode 1421 is connected to the second connecting electrode 1214 .

[0073] Specifically, the parameters of the first diode 1412 and the second diode 1421 are the same. The "parameters" here may include the type and model of the diode, so that the harmonic suppression module 140 has good symmetry. In addition, the diode also has the advantage of a simple structure, which is conducive to the miniaturization design of the RF switch 100. Specifically, the first diode 1412 and the second diode 1421 can both be varactor diodes.

[0074] See also Figure 6 The first variable capacitance unit 1410 may include a first field effect transistor 1414, and the second variable capacitance unit 1420 may include a second field effect transistor 1423, wherein the source and drain of the first field effect transistor 1414 are connected to form a first common terminal (not marked in the figure), and the source and drain of the second field effect transistor 1423 are connected to form a second common terminal (not marked in the figure). Figure 6 As shown in part (a) of FIG. 1 , the first common terminal is connected to the second common terminal, the gate of the first field effect transistor 1414 is connected to the first connecting electrode 1212, and the gate of the second field effect transistor 1423 is connected to the second connecting electrode 1214. Figure 6 As shown in part (b), the gate of the first field effect tube 1414 is connected to the gate of the second field effect tube 1423, the first common terminal is connected to the first connecting electrode 1212, and the second common terminal is connected to the second connecting electrode 1214. Therefore, the variable capacitance unit in this embodiment is implemented by a field effect tube with a short-circuited source and drain, and the first field effect tube 1414 and the second field effect tube 1423 can be equivalent to an adjustable capacitor with an adjustable capacitance value, so as to achieve the effect of suppressing harmonic signals.

[0075] Specifically, the parameters of the first field effect transistor 1414 and the second field effect transistor 1423 are the same. The "parameters" here may include the type and model of the field effect transistor, so that the harmonic suppression module 140 has better symmetry. For example, the first field effect transistor 1414 and the second field effect transistor 1423 may be a junction field effect transistor (JFET), a metal-oxide semiconductor field effect transistor (MOSFET), a high electron mobility transistor (HEMT), a pseudo high electron mobility transistor (PHEMT), and the like.

[0076] It is not difficult to find here that since the N transistors 120, the first field effect transistor 1414 and the second field effect transistor 1423 are all field effect transistors, the N transistors 120, the first field effect transistor 1414 and the second field effect transistor 1423 can be integrated in the same switch chip (for example, SOI chip) to improve the integration of the RF switch 100.

[0077] See also Figure 7 The harmonic suppression module 140 may further include a second resistance unit 1440 and a third resistance unit 1450. The second resistance unit 1440 is connected in series between the first variable capacitance unit 1410 and the first connecting electrode 1212, and the third resistance unit 1450 is connected in series between the second variable capacitance unit 1420 and the second connecting electrode 1214. The second resistance unit 1440 and the third resistance unit 1450 respectively play the role of voltage division to avoid the voltage difference between the first connecting electrode 1212 and the second connecting electrode 1214 being too large, resulting in the breakdown of the first variable capacitance unit 1410 and the second variable capacitance unit 1420.

[0078] Specifically, the second resistor unit 1440 may be a single resistor or a resistor network formed by connecting multiple resistors in series or in parallel. The third resistor unit 1450 may be a single resistor or a resistor network formed by connecting multiple resistors in series or in parallel. The present embodiment does not limit the specific implementation and resistance of the second resistor unit 1440 and the third resistor unit 1450. In some possible embodiments, the resistance of the second resistor unit 1440 and the third resistor unit 1450 may be equal to ensure the structural symmetry of the harmonic suppression module 140.

[0079] In some possible embodiments, when the voltage between the first connection electrode 1212 and the second connection electrode 1214 is greater than or equal to a specified voltage, there are plural first variable capacitance units 1410 and second variable capacitance units 1420. The specified voltage may be greater than or equal to 15V, for example, the specified voltage may be equal to 15V, 16V, 18V, etc.

[0080] See also Figure 8 , multiple first variable capacitance units 1410 are connected in series in sequence to form a first variable capacitance module 1416, and multiple second variable capacitance units 1420 are connected in series in sequence to form a second variable capacitance module 1425. Among them, the polarities of the two ends of two adjacent first variable capacitance units 1410 used for connection are different, and the polarities of the two ends of two adjacent second variable capacitance units 1420 used for connection are different. In other words, multiple first variable capacitance units 1410 are "connected in series in the same direction" in sequence to form the first variable capacitance module 1416, and multiple second variable capacitance units 1420 are "connected in series in the same direction" in sequence to form the second variable capacitance module 1425. In addition, the first variable capacitance module 1416 and the second variable capacitance module 1425 are connected in series between the first connecting pole 1212 and the second connecting pole 1214. Among them, the polarity of one end of the first variable capacitance module 1416 used for connecting the first connecting pole 1212 and the polarity of one end of the second variable capacitance module 1425 used for connecting the second connecting pole 1214 are the same. That is, the first variable capacitance module 1416 and the second variable capacitance module 1425 are "reversely connected in series" between the first connecting electrode 1212 and the second connecting electrode 1214. Specifically, the plurality of first variable capacitance units 1410 and the plurality of second variable capacitance units 1420 may all be implemented by the same triode or the same field effect tube, which is not limited in this embodiment.

[0081] like Figure 8 As shown in part (a) of FIG. 1 , when both the first varactor unit 1410 and the second varactor unit 1420 are triodes, in two adjacent first varactor units 1410, the anode of one triode is connected to the cathode of the other triode. Similarly, in two adjacent second varactor units 1420, the anode of one triode is connected to the cathode of the other triode. Figure 8 As shown in part (b), when both the first varactor unit 1410 and the second varactor unit 1420 are field effect transistors, in two adjacent first varactor units 1410, the gate of one field effect transistor is connected to the common end formed by shorting the source and drain of the other field effect transistor. Similarly, in two adjacent second varactor units 1420, the gate of one field effect transistor is connected to the common end formed by shorting the source and drain of the other field effect transistor.

[0082] Therefore, by setting a plurality of first variable capacitance units 1410 and a plurality of second variable capacitance units 1420, the present embodiment can more flexibly adjust the capacitance values ​​equivalent to the first variable capacitance module 1416 and the second variable capacitance module 1425. In addition, in the case of a single first variable capacitance unit 1410 failure (for example, breakdown short circuit), the remaining first variable capacitance units 1410 can still be equivalent to an adjustable capacitor to ensure the normal operation of the first variable capacitance module 1416. Similarly, in the case of a single second variable capacitance unit 1420 failure (for example, breakdown short circuit), the remaining second variable capacitance units 1420 can still be equivalent to an adjustable capacitor to ensure the normal operation of the second variable capacitance module 1425.

[0083] In some possible embodiments, when the first connection electrode 1212 and the second connection electrode 1214 belong to two adjacent transistors 120 respectively, the number of the first variable capacitance unit 1410 and the second variable capacitance unit 1420 are both two. Here, the "two adjacent transistors 120" refers to two transistors 120 directly connected in series. Since the two transistors 120 are directly connected in series, it means that the voltage difference between the first connection electrode 1212 and the second connection electrode 1214 is small. By providing two first variable capacitance units 1410 and two second variable capacitance units 1420, a better harmonic suppression effect can be achieved, thereby saving the layout space of the RF switch 100.

[0084] In some other possible embodiments, when the first connecting electrode 1212 and the second connecting electrode 1214 belong to two non-adjacent transistors 120, the number of the first variable capacitance unit 1410 and the second variable capacitance unit 1420 is greater than two. The "two non-adjacent transistors 120" here means that there are other transistors 120 (such as Figure 3 In this case, the voltage difference between the first connecting pole 1212 and the second connecting pole 1214 is usually large, and more than two first variable capacitance units 1410 and more than two second variable capacitance units 1420 need to be provided. The multiple first variable capacitance units 1410 and the multiple second variable capacitance units 1420 can play a role of voltage division to ensure the safe operation of the harmonic suppression module 140.

[0085] See also Fig. 9, the number of harmonic suppression modules 140 is M, and M is less than N. For example, when N is equal to 6, M can be equal to 1, 2, 3, 4, and 5. The M harmonic suppression modules 140 are sequentially arranged in the direction from the first connection end 102 to the second connection end 104. Among them, one end of the first harmonic suppression module 140 is connected to the connection electrode 121 of the first transistor 120, and the other end of the first harmonic suppression module 140 is connected to the connection electrode 121 of the second transistor 120. When M is greater than 1, one end of the i-th harmonic suppression module 140 is connected to the connection electrode 121 of the i-th transistor 120, and the other end of the i-th harmonic suppression module 140 is connected to the connection electrode 121 of the i+1-th transistor 120. Among them, i is greater than 1 and less than or equal to M.

[0086] exist Fig. 9 In the illustrated embodiment, M is equal to 2, and two harmonic suppression modules 140 are sequentially arranged in a direction from the first connection end 102 to the second connection end 104. One end of the first harmonic suppression module 140 is connected to the connection electrode 121 of the first transistor 120, and the other end of the first harmonic suppression module 140 is connected to the connection electrode 121 of the second transistor 120. One end of the second harmonic suppression module 140 is connected to the connection electrode 121 of the second transistor 120, and the other end of the second harmonic suppression module 140 is connected to the connection electrode 121 of the third transistor 120.

[0087] It is not difficult to find here. Fig. 9 Each harmonic suppression module 140 is connected between two connection electrodes 121 corresponding to two adjacent transistors 120, and multiple harmonic suppression modules 140 are arranged in sequence in the direction from the first connection end 102 to the second connection end 104. Therefore, by providing multiple harmonic suppression modules 140, the embodiment can further improve the suppression effect of harmonic signals.

[0088] It should be noted here that, in some possible situations, when the RF switch 100 is applied in the RF front-end module, the first connection end 102 is suitable for connecting to a port with a stronger RF signal, and the second connection end 104 is suitable for connecting to a port with a weaker RF signal (for example, ground). In other words, the power of the RF signal at the first connection end 102 will be greater than the power of the RF signal at the second connection end 104. In this embodiment, by setting a plurality of harmonic suppression modules 140 on a side closer to the first connection end 102, the suppression effect of the harmonic suppression module 140 on the harmonic signal can be improved, thereby ensuring the transmission quality of the RF signal. Here, "closer to the first connection end 102" means that the distance between the transistor 120 connected to the harmonic suppression module 140 and the first connection end 102 is less than the distance between the transistor 120 and the second connection end 104.

[0089] See also Fig.10 , the number of harmonic suppression modules 140 is K, and K is less than N. The K harmonic suppression modules 140 may include P first harmonic suppression submodules 1470 and Q second harmonic suppression submodules 1490. That is, K is equal to P+Q. For example, when N is equal to 6, K may be equal to 2, 3, 4, or 5.

[0090] In at least one embodiment, the structures of the "first harmonic suppression submodule" and the "second harmonic suppression submodule" may be different. In at least one embodiment, the structures of the "first harmonic suppression submodule" and the "second harmonic suppression submodule" may be the same.

[0091] It should be noted here that the "harmonic suppression module", "first harmonic suppression submodule" and "second harmonic suppression submodule" are only different in naming, and there is no difference in hardware essence. In order to facilitate the description of the specific connection positions of the K harmonic suppression modules, this application refers to a part of the K harmonic suppression modules as the "first harmonic suppression submodule" and the other part of the K harmonic suppression modules as the "second harmonic suppression submodule".

[0092] P first harmonic suppression submodules 1470 are sequentially arranged in the direction from the first connection end 102 to the second connection end 104. Among them, one end of the first first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the first transistor 120, and the other end of the first first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the second transistor 120. One end of the i-th first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the i-th transistor 120, and the other end of the i-th first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the i+1-th transistor 120. Among them, i is greater than 1 and less than or equal to P. Q second harmonic suppression submodules 1490 are sequentially arranged in the direction from the second connection end 104 to the first connection end 102. One end of the first second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the N-1th transistor 120, and the other end of the first second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the Nth transistor 120. One end of the jth second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the Njth transistor 120, and the other end of the jth second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the N-j+1th transistor 120. Wherein, j is greater than 1 and less than or equal to Q.

[0093] The above-mentioned “i-th transistor” and “j-th transistor” are transistors marked in order based on the direction from the first connection terminal 102 to the second connection terminal 104. Specifically, the “1st transistor” refers to the transistor directly connected to the first connection terminal 102, and the “N-th transistor” refers to the transistor directly connected to the second connection terminal 104.

[0094] exist Fig.10 In the illustrated embodiment, K is equal to 4, P and Q are respectively equal to 2, and two first harmonic suppression submodules 1470 are sequentially arranged in the direction from the first connection end 102 to the second connection end 104. Among them, one end of the first first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the first transistor 120, and the other end of the first first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the second transistor 120. One end of the second first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the second transistor 120, and the other end of the second first harmonic suppression submodule 1470 is connected to the connection electrode 121 of the third transistor 120. Two second harmonic suppression submodules 1490 are sequentially arranged in the direction from the second connection end 104 to the first connection end 102. Among them, one end of the first second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the N-1th transistor 120, and the other end of the first second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the N-1th transistor 120. One end of the second second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the N-2th transistor 120, and the other end of the second second harmonic suppression submodule 1490 is connected to the connection electrode 121 of the N-1th transistor 120.

[0095] It is not difficult to find here. Fig.10 Each harmonic suppression module 140 is connected between two connection electrodes 121 corresponding to two adjacent transistors 120, and multiple harmonic suppression modules 140 are distributed at both ends of the RF switch 100. Therefore, when the RF switch 100 is used in the RF front-end module, whether the RF signal is transmitted from the first connection end 102 to the second connection end 104, or from the second connection end 104 to the first connection end 102, the multiple harmonic suppression modules 140 can play a good harmonic suppression effect to ensure the normal transmission of the RF signal.

[0096] In summary, Fig. 9 and Fig.10 In the corresponding two implementations, multiple harmonic suppression modules 140 are arranged at one end or both ends of the main RF path of the RF switch 100, which can further improve the suppression effect of harmonics compared to being arranged in the middle area of ​​the main RF path. The "main RF path" here refers to the series branch formed by N transistors 120 connected in series in sequence.

[0097] The first embodiment of the present application provides a radio frequency switch 100, which may include N transistors 120 connected in series and at least one harmonic suppression module 140. Wherein, N is an integer greater than 1. The harmonic suppression module 140 is connected between two connection poles 121 corresponding to two of the transistors 120, and is used to suppress the harmonic signal in the radio frequency signal passing through the radio frequency switch 100. Specifically, the harmonic suppression module 140 can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0098] Furthermore, the transistor 120 is a field effect transistor, wherein the two connecting electrodes 121 corresponding to the two transistors 120 are two body electrodes or two gate electrodes. Since the harmonic suppression module 140 in the present application is not directly connected to the main RF path (that is, not directly connected to the source or drain of the field effect transistor), but is connected between two body electrodes or two gate electrodes, the above connection method can prevent other harmonic signals generated by the harmonic suppression module 140 itself from affecting the main RF path, so as to ensure that the RF signal can be normally transmitted on the main RF path.

[0099] See also Fig.11 , the second embodiment of the present application provides a radio frequency switch 100, which may include N transistors 120 connected in series and at least one harmonic suppression module 140. Wherein, N is an integer greater than 1. Specifically, N may be equal to 6, 8, 9, 10, 12, 15, 20, and so on. In some possible embodiments, the R&D personnel may determine the value of N according to the voltage value at both ends of the radio frequency switch 100 and the withstand voltage value of a single transistor 120. For example, when the voltage value at both ends of the radio frequency switch 100 is 45V and the withstand voltage value of a single transistor 120 is 6V, then N may be 8. In other possible embodiments, the R&D personnel may determine the value of N according to the actual application scenario of the radio frequency switch 100. For example, when the radio frequency switch 100 is used as a switch in a receiving link or a transmitting link, the value of N may be greater than or equal to 6 and less than or equal to 9. For another example, when the radio frequency switch 100 is used as a tuner switch, the value of N may be greater than or equal to 10 and less than or equal to 20.

[0100] The harmonic suppression module 140 is connected between two connection electrodes 121 corresponding to two of the transistors 120, and is used to suppress the harmonic signal in the RF signal passing through the RF switch 100. Specifically, the harmonic suppression module 140 can generate a suppression signal with a phase opposite to the harmonic signal in the RF signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the RF signal.

[0101] Further, in Fig.11 In the embodiment shown, the transistor 120 is a bipolar transistor, wherein the two connecting electrodes 121 corresponding to the two transistors 120 are two body electrodes Body or two base electrodes Base. Fig.11 In the illustrated embodiment, the harmonic suppression module 140 may be connected between two body electrodes Body corresponding to the two bipolar transistors. Fig.12 The harmonic suppression module 140 may be connected between two bases Base corresponding to the two bipolar transistors.

[0102] It should be noted here that, in addition to generating the suppression signal, the harmonic suppression module 140 itself also generates other harmonic signals (that is, harmonic signals other than the suppression signal). Since the harmonic suppression module 140 in the present application is not directly connected to the main RF path (that is, not directly connected to the collector or emitter of the bipolar transistor), but is connected between two body electrodes or two base electrodes, the above connection method can prevent other harmonic signals generated by the harmonic suppression module 140 itself from affecting the main RF path, so as to ensure that the RF signal can be transmitted normally on the main RF path.

[0103] Here, taking the harmonic signal in the RF signal passing through the RF switch 100 as a third harmonic signal as an example, the harmonic suppression module 140 can generate a suppression signal with a phase opposite to the third harmonic signal (that is, an anti-phase signal of the third harmonic signal) to achieve the suppression effect on the third harmonic signal. In addition, since the harmonic suppression module 140 itself will also generate other harmonic signals (for example, fourth harmonic signals, fifth harmonic signals), since the harmonic suppression module 140 is not directly connected to the main RF path, it can be avoided that the fourth harmonic signal and the fifth harmonic signal generated by the harmonic suppression module 140 itself affect the main RF path, thereby ensuring the transmission quality of the RF signal.

[0104] The specific implementation of the RF switch 100 is described below.

[0105] In this embodiment, the RF switch 100 may be provided with a first connection terminal 102 and a second connection terminal 104, and N transistors 120 are sequentially connected in series between the first connection terminal 102 and the second connection terminal 104. The transistor 120 is a bipolar transistor, and specifically, in two adjacent bipolar transistors, the collector of one bipolar transistor is connected to the emitter of the other bipolar transistor.

[0106] Exemplarily, transistor 120 may be a bipolar junction transistor (BJT) or a heterojunction bipolar transistor (HBT). Of course, transistor 120 may also be other types of bipolar transistors, which are not specifically limited in this embodiment. Optionally, transistor 120 may be formed on a conventional silicon substrate or on a silicon-on-insulator (SOI) substrate.

[0107] In this embodiment, the harmonic suppression module 140 is connected between two body electrodes Body or two base electrodes Base corresponding to two of the transistors 120, and is used to suppress harmonic signals in the RF signal passing through the RF switch 100. The specific connection position of the harmonic suppression module 140 can be flexibly adjusted by the R&D personnel based on the specific layout of the switch chip where the N transistors 120 are located, and this embodiment does not specifically limit it.

[0108] exist Fig.11 and Fig.12 In the illustrated embodiment, the harmonic suppression module 140 is connected between two connection electrodes 121 corresponding to two adjacent transistors 120. Since the voltage difference between the two connection electrodes 121 corresponding to two adjacent transistors 120 is small, the safety of the harmonic suppression module 140 can be ensured, and the breakdown caused by excessive voltage difference can be avoided.

[0109] In some other possible embodiments, the harmonic suppression module 140 may be connected between two connection electrodes 121 corresponding to two non-adjacent transistors 120. For example, when the voltage resistance performance of the harmonic suppression module 140 is good, one or more transistors 120 may be spaced between the two transistors 120 connected to the harmonic suppression module 140, so that the layout of the harmonic suppression module 140 in the RF switch 100 can be more flexible.

[0110] In some possible embodiments, when there are multiple harmonic suppression modules 140, the two transistors 120 connected to a part of the harmonic suppression modules 140 may be two body electrodes, and the two transistors 120 connected to another part of the harmonic suppression modules 140 may be two base electrodes. Researchers may adjust the connection position of the harmonic suppression module 140 according to the actual layout of the RF chip 100, which is not specifically limited in this embodiment.

[0111] The specific implementation of the harmonic suppression module 140 may refer to and follow the relevant introduction in the first embodiment above. In the absence of conflict, the relevant features in the first embodiment above may be combined with this embodiment, and will not be repeated here to save space.

[0112] See also Fig.13 , the embodiment of the present application also provides a radio frequency front-end module 200, wherein the radio frequency front-end module 200 is a component that integrates two or more discrete devices such as radio frequency switches, low noise amplifiers, filters, duplexers, power amplifiers, etc. into an independent module, thereby improving the integration and hardware performance, and miniaturizing the volume. Specifically, the radio frequency front-end module 200 can be applied to wireless communication devices such as smart phones, tablet computers, and smart watches to achieve the reception and transmission of radio frequency signals. In addition, with the development of 5G technology, the requirements for the performance of radio frequency front-end modules are getting higher and higher. The technical solution in this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication equipment.

[0113] In this embodiment, the RF front-end module 200 is provided with an antenna port 201 for connecting the antenna ANT, and the RF front-end module 200 may include a plurality of first tuning branches 203 connected in parallel. Each first tuning branch 203 may include a first switch 210, and the first switch 210 is provided with a first connection terminal 102 for connecting the antenna port 201 and a second connection terminal 104 for grounding. Therefore, the first switch 210 in this embodiment is a tuner switch (ie, a Tuner switch). Specifically, N is greater than or equal to 10 and less than or equal to 20. For example, N may be 10, 12, 15, 18, 20, and so on.

[0114] In this embodiment, the first switch 210 may include N transistors (not shown in the figure) and at least one harmonic suppression module (not shown in the figure), and the N transistors are sequentially connected in series between the first connection terminal 102 and the second connection terminal 104, and N is an integer greater than 1. The harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the first switch 210. Specifically, the harmonic suppression module can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0115] Specifically, in some possible embodiments, the transistor is a field effect transistor, and the two connecting poles corresponding to the two transistors are two body poles or two gates. In other possible embodiments, the transistor is a triode, and the two connecting poles corresponding to the two transistors are two body poles or two bases.

[0116] For the specific implementation of the first switch 210, reference may be made to the relevant introduction of the RF switch 100 in the above embodiment. In the absence of conflict, the relevant features of the transistor and harmonic suppression module in the above embodiment may be combined with this embodiment, and will not be repeated here to save space.

[0117] In this embodiment, one of the harmonic suppression modules is connected to the connection electrode of the first transistor in the direction from the first connection terminal 102 of the first switch 210 to the second connection terminal 104. The connection position of the harmonic suppression module can be referred to as Fig. 9 Related descriptions in the illustrated embodiment. Since the first connection end 102 of the first switch 210 is used to connect to one end of the RF port 201, the power of the RF signal at the first connection end 102 is greater than the power of the RF signal at the second connection end 104. In this embodiment, by arranging the harmonic suppression module close to the first connection end 102 of the first switch 210, the suppression effect of the harmonic suppression module on the harmonic signal can be improved, thereby ensuring the transmission quality of the RF signal.

[0118] In this embodiment, each first tuning branch 203 may further include a tuning element 230, and the tuning element 230 and the corresponding first switch 210 are connected in series to form the first tuning branch 203. The tuning element 230 is used to adjust the output impedance of the radio frequency signal so that the antenna has a higher signal transmission power in any frequency band. Specifically, the tuning element 230 may include at least one of an inductor and a capacitor. In some possible embodiments, the tuning element 230 may be a single capacitor or a single inductor; in other possible embodiments, the tuning element 230 may also be a matching circuit composed of a capacitor and an inductor. Specifically, the tuning elements 230 included in different first tuning branches 203 may use different hardware parameters so that when the first switches 210 in different first tuning branches 203 are in the on state, different tuning effects on the radio frequency signal can be achieved.

[0119] exist Fig.13 In the illustrated embodiment, one end of the tuning element 230 is connected to the RF port 201, the other end of the tuning element 230 is connected to the first connection end 102 of the first switch 210, and the second connection end 104 of the first switch 210 is grounded. In some other possible embodiments, the first connection end 102 of the first switch 210 is connected to the RF port 201, the second connection end 104 of the first switch 210 is connected to one end of the tuning element 230, and the other end of the tuning element 230 is grounded. This embodiment does not limit the specific connection position of the tuning element 230.

[0120] In this embodiment, the RF front-end module 200 is also provided with a signal port 205, which is connected to the antenna port 201, and the signal port 205 can be used to connect the transmission link and / or the receiving link in the RF front-end module. On the one hand, the RF signal received by the antenna ANT can be transmitted to the receiving link in the RF front-end module via the antenna port 201 and the signal port 205 in sequence; on the other hand, the RF signal processed by the transmission link in the RF front-end module can be transmitted to the antenna ANT through the signal port 205 and the antenna port 201. The RF front-end module 200 can select the first switch 210 in the corresponding first tuning branch 203 to be turned on according to the frequency of the currently transmitted or received signal, so as to achieve impedance matching of RF signals of multiple different frequency bands. Specifically, since the output impedance of the transmission link is certain, the input impedance of the antenna varies greatly with the frequency. Therefore, it is necessary to set multiple first tuning branches 203 between the transmission link and the antenna to achieve impedance matching of the transmission link and the antenna, so that RF signals of different frequency bands can achieve higher radiation power when transmitting.

[0121] Specifically, the transmission link may include components such as a power amplifier, a switch, a filter / duplexer / multiplexer, and the receiving link may include components such as a low noise amplifier, a switch, a filter / duplexer / multiplexer, etc. Among them, the transmission link and the receiving link may share at least some components (such as a switch, a filter / duplexer / multiplexer), or may not share components, which is not limited in this embodiment.

[0122] See also Fig.14 , the embodiment of the present application also provides a radio frequency front-end module 200, wherein the radio frequency front-end module 200 is a component that integrates two or more discrete devices such as radio frequency switches, low noise amplifiers, filters, duplexers, power amplifiers, etc. into an independent module, thereby improving the integration and hardware performance, and miniaturizing the volume. Specifically, the radio frequency front-end module 200 can be applied to wireless communication devices such as smart phones, tablet computers, and smart watches to achieve the reception and transmission of radio frequency signals. In addition, with the development of 5G technology, the requirements for the performance of radio frequency front-end modules are getting higher and higher. The technical solution in this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication equipment.

[0123] In this embodiment, the RF front-end module 200 is provided with a signal port 205 and an antenna port 201 for connecting an antenna ANT, and the RF front-end module 200 may include a plurality of second tuning branches 207 connected in parallel. Each second tuning branch 207 may include a second switch 220, and the second switch 220 is provided with a first connection end 102 for connecting the antenna port 201 and a second connection end 104 for connecting the signal port 205. Therefore, the second switch 220 in this embodiment is a RF switch in a receiving link or a transmitting link. Specifically, N is greater than or equal to 6 and less than or equal to 10. For example, N can be 6, 8, 9, 10, and so on.

[0124] In this embodiment, the second switch 220 may include N transistors (not shown in the figure) and at least one harmonic suppression module (not shown in the figure), and the N transistors are sequentially connected in series between the first connection terminal 102 and the second connection terminal 104, and N is an integer greater than 1. The harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the second switch 220. Specifically, the harmonic suppression module can generate a suppression signal with a phase opposite to the harmonic signal in the radio frequency signal, and the suppression signal can offset the harmonic signal to suppress or even eliminate the harmonic signal, thereby ensuring the transmission quality of the radio frequency signal.

[0125] Specifically, in some possible embodiments, the transistor is a field effect transistor, and the two connecting poles corresponding to the two transistors are two body poles or two gates. In other possible embodiments, the transistor is a triode, and the two connecting poles corresponding to the two transistors are two body poles or two bases.

[0126] For the specific implementation of the second switch 220, reference may be made to the relevant introduction of the RF switch 100 in the above embodiment. In the absence of conflict, the relevant features of the transistor and harmonic suppression module in the above embodiment may be combined with this embodiment, and will not be repeated here to save space.

[0127] In this embodiment, one of the harmonic suppression modules is connected to the connection electrode of the first transistor in the direction from the first connection terminal 102 of the second switch 220 to the second connection terminal 104. The connection position of the harmonic suppression module can be referred to as Fig. 9 Related descriptions in the illustrated embodiment. Since the first connection end 102 of the second switch 220 is used to connect to one end of the RF port 201, the power of the RF signal at the first connection end 102 is greater than the power of the RF signal at the second connection end 104. The present application can improve the suppression effect of the harmonic suppression module on the harmonic signal by arranging the harmonic suppression module close to the first connection end 102 of the second switch 220, thereby ensuring the transmission quality of the RF signal.

[0128] In this embodiment, each second tuning branch 207 may further include a tuning element 230, and the tuning element 230 and the corresponding second switch 220 are connected in series to form the second tuning branch 207. The tuning element 230 is used to adjust the output impedance of the radio frequency signal so that the antenna has a higher signal transmission power in any frequency band. Specifically, the tuning element 230 may include at least one of an inductor and a capacitor. For a specific introduction to the tuning element 230, reference may be made to the detailed description in the above embodiment, which will not be repeated here.

[0129] exist Fig.14 In the illustrated embodiment, one end of the tuning element 230 is connected to the RF port 201, the other end of the tuning element 230 is connected to the first connection end 102 of the second switch 220, and the second connection end 104 of the second switch 220 is connected to the signal port 205. In some other possible embodiments, the first connection end 102 of the second switch 220 is connected to the RF port 201, the second connection end 104 of the second switch 220 is connected to one end of the tuning element 230, and the other end of the tuning element 230 is connected to the signal port 205. The specific connection position of the tuning element 230 is not limited in this embodiment.

[0130] In this embodiment, the signal port 205 can be used to connect the transmission link and / or the receiving link in the RF front-end module. For the specific introduction of the signal port 205, the transmission link, and the receiving link, please refer to the detailed description in the above embodiment, which will not be repeated here.

[0131] See also Fig.15 This embodiment also provides an electronic device 500, which may be a 4G or 5G communication device such as a smart phone, a tablet computer, or a smart watch. Specifically, the electronic device 500 may include the RF switch 100 in the above embodiment, or include the RF front-end module 200 in the above embodiment to realize the reception and transmission of RF signals.

[0132] In addition, with the development of 5G technology, the requirements for the performance of RF front-end modules are getting higher and higher. The technical solution of this application can be applied to 5G RF front-end modules to improve the communication performance of 5G communication equipment.

[0133] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0134] In the description of the present application, it should be understood that terms such as "upper", "lower", "front", "back", "left", "right", and "inside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are merely simplified descriptions for the convenience of describing the present application. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0135] In this application, unless otherwise clearly specified or limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can be internal communication between two elements, or it can be only surface contact. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0136] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0137] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0138] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency switch, characterized in that: include: N transistors connected in series in sequence, where N is an integer greater than 1; as well as At least one harmonic suppression module, the harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the radio frequency switch; wherein the transistor is a field effect transistor, and the two connection poles corresponding to the two transistors are two body poles or two gates.

2. The radio frequency switch according to claim 1, characterized in that: The harmonic suppression module is used to generate a suppression signal, and the suppression signal has a phase opposite to that of the harmonic signal in the radio frequency signal.

3. The radio frequency switch according to claim 1, characterized in that: The harmonic suppression module is connected between two connection electrodes corresponding to two adjacent transistors.

4. The radio frequency switch according to claim 1, characterized in that: The at least one harmonic suppression module includes a first harmonic suppression module and a second harmonic suppression module; The first harmonic suppression module is connected between two body electrodes corresponding to two of the transistors, and the second harmonic suppression module is connected between two gate electrodes corresponding to any other two transistors; Alternatively, the first harmonic suppression module is connected between two body electrodes corresponding to two of the transistors, and the second harmonic suppression module is connected between two body electrodes corresponding to any other two transistors; Alternatively, the first harmonic suppression module is connected between two gates corresponding to two of the transistors, and the second harmonic suppression module is connected between two gates corresponding to any other two transistors.

5. The radio frequency switch according to claim 1, characterized in that: The harmonic suppression module includes a first variable capacitance unit and a second variable capacitance unit, wherein the two connecting electrodes corresponding to the two transistors include a first connecting electrode and a second connecting electrode; The first variable capacitance unit and the second variable capacitance unit are connected in series between the first connecting pole and the second connecting pole; wherein the polarity of one end of the first variable capacitance unit connected to the first connecting pole is the same as the polarity of one end of the second variable capacitance unit connected to the second connecting pole.

6. The radio frequency switch according to claim 5, characterized in that: The harmonic suppression module is provided with a control terminal, and the control terminal is used to input a regulated voltage; The harmonic suppression module further includes a first resistance unit, one end of which is connected to the control end, and the other end of which is connected to a common connection end formed by connecting the first variable capacitance unit and the second variable capacitance unit.

7. The radio frequency switch according to claim 6, characterized in that: There are multiple harmonic suppression modules, and the regulated voltages input to multiple control terminals corresponding to the multiple harmonic suppression modules are the same voltage.

8. The radio frequency switch according to claim 6, characterized in that: There are multiple harmonic suppression modules, and the regulation voltages input to the multiple control terminals corresponding to the multiple harmonic suppression modules are different.

9. The radio frequency switch according to claim 5, characterized in that: The first variable capacitance unit includes a first diode, and the second variable capacitance unit includes a second diode; The anode of the first diode is connected to the anode of the second diode, the cathode of the first diode is connected to the first connecting electrode, and the cathode of the second diode is connected to the second connecting electrode; or The cathode of the first diode is connected to the cathode of the second diode, the anode of the first diode is connected to the first connecting electrode, and the anode of the second diode is connected to the second connecting electrode.

10. The radio frequency switch according to claim 9, characterized in that: The first diode and the second diode are both varactor diodes.

11. The radio frequency switch according to claim 5, characterized in that: The first variable capacitance unit includes a first field effect transistor, and the second variable capacitance unit includes a second field effect transistor; the source and the drain of the first field effect transistor are connected to form a first common terminal, and the source and the drain of the second field effect transistor are connected to form a second common terminal; The first common terminal is connected to the second common terminal, the gate of the first field effect transistor is connected to the first connecting electrode, and the gate of the second field effect transistor is connected to the second connecting electrode; or The gate of the first field effect transistor is connected to the gate of the second field effect transistor, the first common end is connected to the first connecting electrode, and the second common end is connected to the second connecting electrode.

12. The radio frequency switch according to claim 5, characterized in that: The harmonic suppression module also includes a second resistance unit and a third resistance unit; The second resistance unit is connected in series between the first variable capacitance unit and the first connecting electrode; and the third resistance unit is connected in series between the second variable capacitance unit and the second connecting electrode.

13. The radio frequency switch according to claim 5, characterized in that: When the voltage between the first connecting electrode and the second connecting electrode is greater than or equal to a specified voltage, the number of the first variable capacitance unit and the number of the second variable capacitance unit are both multiple; A plurality of the first variable capacitance units are sequentially connected in series to form a first variable capacitance module, and a plurality of the second variable capacitance units are sequentially connected in series to form a second variable capacitance module; wherein two adjacent first variable capacitance units are connected at two ends with different polarities, and two adjacent second variable capacitance units are connected at two ends with different polarities; The first variable capacitance module and the second variable capacitance module are connected in series between the first connection pole and the second connection pole; wherein the polarity of one end of the first variable capacitance module connected to the first connection pole is the same as the polarity of one end of the second variable capacitance module connected to the second connection pole.

14. The radio frequency switch according to claim 13, characterized in that: The specified voltage is greater than or equal to 15V.

15. The radio frequency switch according to claim 13, characterized in that: In the case where the first connecting electrode and the second connecting electrode belong to two adjacent transistors respectively, the number of the first variable capacitance unit and the number of the second variable capacitance unit are both two; In the case that the first connecting electrode and the second connecting electrode belong to two non-adjacent transistors respectively, the number of the first variable capacitance units and the number of the second variable capacitance units are greater than two.

16. The radio frequency switch according to any one of claims 1 to 15, characterized in that: The radio frequency switch is further provided with a first connection end and a second connection end, and the N transistors are sequentially connected in series between the first connection end and the second connection end; The number of the harmonic suppression modules is M, and M is less than N; the M harmonic suppression modules are arranged in sequence in the direction from the first connection end to the second connection end; wherein, one end of the first harmonic suppression module is connected to the connection electrode of the first transistor, and the other end of the first harmonic suppression module is connected to the connection electrode of the second transistor; one end of the i-th harmonic suppression module is connected to the connection electrode of the i-th transistor, and the other end of the i-th harmonic suppression module is connected to the connection electrode of the i+1-th transistor; wherein, i is greater than 1 and less than or equal to M.

17. The radio frequency switch according to any one of claims 1 to 15, characterized in that: The radio frequency switch is further provided with a first connection end and a second connection end, and the N transistors are sequentially connected in series between the first connection end and the second connection end; The number of the harmonic suppression modules is K, and K is less than N; the K harmonic suppression modules include P first harmonic suppression submodules and Q second harmonic suppression submodules; P first harmonic suppression submodules are sequentially arranged in the direction from the first connection end to the second connection end; wherein, one end of the first first harmonic suppression submodule is connected to the connection pole of the first transistor, and the other end of the first first harmonic suppression submodule is connected to the connection pole of the second transistor; one end of the i-th first harmonic suppression submodule is connected to the connection pole of the i-th transistor, and the other end of the i-th first harmonic suppression submodule is connected to the connection pole of the i+1-th transistor; wherein, i is greater than 1 and less than or equal to P; Q second harmonic suppression submodules are sequentially arranged in the direction from the second connection end to the first connection end; wherein, one end of the first second harmonic suppression submodule is connected to the connection electrode of the N-1th transistor, and the other end of the first second harmonic suppression submodule is connected to the connection electrode of the Nth transistor; one end of the jth second harmonic suppression submodule is connected to the connection electrode of the Njth transistor, and the other end of the jth second harmonic suppression submodule is connected to the connection electrode of the N-j+1th transistor; wherein, j is greater than 1 and less than or equal to Q.

18. A radio frequency switch, characterized in that: include: N transistors connected in series in sequence, where N is an integer greater than 1; as well as At least one harmonic suppression module, the harmonic suppression module is connected between two connection poles corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the radio frequency switch; wherein the transistor is a bipolar transistor, and the two connection poles corresponding to the two transistors are two body poles or two base poles.

19. The radio frequency switch according to claim 18, characterized in that: The harmonic suppression module is used to generate a suppression signal, and the suppression signal has a phase opposite to that of the harmonic signal in the radio frequency signal.

20. The radio frequency switch according to claim 19, characterized in that: The harmonic suppression module is connected between two connection electrodes corresponding to two adjacent transistors.

21. A radio frequency front-end module, characterized in that: An antenna port for connecting an antenna is provided; the RF front-end module comprises a plurality of first tuning branches connected in parallel; Each of the first tuning branches includes a first switch, the first switch is provided with a first connection end for connecting the antenna port and a second connection end for grounding; the first switch includes N transistors and at least one harmonic suppression module, the N transistors are sequentially connected in series between the first connection end and the second connection end, and N is an integer greater than 1; The harmonic suppression module is connected between two connection electrodes corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the first switch; One of the harmonic suppression modules is connected to a connection electrode of a first transistor in a direction from a first connection end of the first switch to a second connection end.

22. The radio frequency front-end module according to claim 21, characterized in that: Each of the first tuning branches further comprises a tuning element, wherein the tuning element comprises at least one of an inductor and a capacitor; The tuning element and the corresponding first switch are connected in series to form the first tuning branch.

23. The radio frequency front-end module according to claim 21 or 22, characterized in that: When the transistor is a field effect transistor, the two connecting poles corresponding to two of the transistors are two body poles or two gate poles; when the transistor is a triode, the two connecting poles corresponding to two of the transistors are two body poles or two base poles.

24. The radio frequency front-end module according to claim 21 or 22, characterized in that: The N is greater than or equal to 10 and less than or equal to 20.

25. A radio frequency front-end module, characterized in that: A signal port and an antenna port for connecting an antenna are provided; the RF front-end module includes a plurality of second tuning branches connected in parallel; Each of the second tuning branches includes a second switch, the second switch is provided with a first connection end for connecting the antenna port and a second connection end for connecting the signal port; the second switch includes N transistors and at least one harmonic suppression module, the N transistors are sequentially connected in series between the first connection end and the second connection end, and N is an integer greater than 1; The harmonic suppression module is connected between two connection electrodes corresponding to two of the transistors, and the harmonic suppression module is used to suppress the harmonic signal in the radio frequency signal passing through the second switch; One of the harmonic suppression modules is connected to a connection electrode of a first transistor in a direction from the first connection end of the second switch to the second connection end.

26. The radio frequency front-end module according to claim 25, characterized in that: Each of the second tuning branches further comprises a tuning element, wherein the tuning element comprises at least one of an inductor and a capacitor; The tuning element and the corresponding second switch are connected in series to form the second tuning branch.

27. The radio frequency front-end module according to claim 25 or 26, characterized in that: When the transistor is a field effect transistor, the two connecting poles corresponding to two of the transistors are two body poles or two gate poles; when the transistor is a triode, the two connecting poles corresponding to two of the transistors are two body poles or two base poles.

28. The radio frequency front-end module according to claim 25 or 26, characterized in that: The N is greater than or equal to 6 and less than or equal to 10.

29. An electronic device, characterized in that: include: The radio frequency switch according to any one of claims 1 to 20; Or a radio frequency front-end module as described in any one of claims 21 to 28.

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