X-ray detector and manufacturing method thereof

Abstract

The invention provides an X-ray detector and a manufacturing method thereof, and the method comprises the following steps: S1, providing a plurality of initial crystals with different preset thicknesses, and forming electrode structures on the two surfaces of the initial crystals, including array pixel electrodes and common electrodes; s2, cutting each initial crystal with the preset thickness into a plurality of independent crystal modules with corresponding preset thicknesses; s3, arranging and positioning a plurality of independent crystal modules with different preset thicknesses on the substrate to form a multi-energy crystal micromodule; s4, splicing a plurality of multi-energy crystal micromodules to form a linear array or area array module; and S5, attaching a conductive material to the surface of the common electrode, and electrically connecting the conductive material with an external circuit. According to the X-ray detector, efficient detection of low-energy and high-energy X-rays can be achieved at the same time, unification of high sensitivity and high resolution in low-energy and high-energy X-ray application is achieved, and the recognition capacity of X-rays with different energies is enhanced.

Description

Technical Field

[0001] The present invention belongs to the technical field of X-ray detection, and in particular relates to an X-ray detector and a manufacturing method thereof. Background Art

[0002] In the field of X-ray detection, when X-rays pass through an object, their energy will be attenuated due to the interaction with the atoms inside the object. This attenuation is related to the density, composition and thickness of the object. However, existing technologies face a series of challenges in detecting X-rays of different energies. Especially under low-energy X-ray conditions, due to the weak penetration of low-energy X-rays in the detector material, it takes a long time to generate electron-hole pairs and transmit them to the electrode, thereby increasing the transit time and causing a pile-up effect, which will seriously affect the performance of the detector. Under high-energy X-ray conditions, high-energy X-rays have strong penetration. In order to ensure sufficient absorption efficiency, thicker detector crystals are needed to absorb more X-ray energy, which increases the complexity and cost of the detector.

[0003] In addition, meeting the needs of low-energy and high-energy X-ray detection in the same detector has always been a difficulty in technological development. Existing detectors have deficiencies in material optimization and structural design, making it difficult to achieve the unity of high sensitivity and high resolution in low-energy and high-energy applications. This limitation restricts the application of detectors in fields such as medical imaging and industrial detection, especially in scenarios where high-absorbing tissues need to be accurately distinguished from low-absorbing tissues.

[0004] Therefore, it is necessary to provide an improved technical solution to address the above-mentioned deficiencies in the prior art. Summary of the invention

[0005] In view of the shortcomings of the prior art described above, an object of the present invention is to provide an X-ray detector and a method for manufacturing the same, so as to solve the problem in the prior art that the same detector cannot meet the requirements of low-energy and high-energy X-ray detection at the same time, and the problem that the detectors in the prior art are difficult to achieve the unification of high sensitivity and high resolution in low-energy and high-energy X-ray applications.

[0006] To achieve the above object and other related objects, the present invention provides a method for manufacturing an X-ray detector, the manufacturing method comprising the following steps:

[0007] S1. providing a plurality of initial crystals with different preset thicknesses, wherein the initial crystals include opposite top and bottom surfaces, and forming electrode structures on both surfaces of the initial crystals, wherein the electrode structures include arrayed pixel electrodes and common electrodes;

[0008] S2, each of the initial crystals of a preset thickness is cut into a plurality of independent crystal modules of corresponding preset thicknesses;

[0009] S3, arranging and positioning a plurality of independent crystal modules of different preset thicknesses on a substrate to form a multi-energy crystal micromodule;

[0010] S4, splicing a plurality of the multi-energy crystal micro-modules to form a linear array or a planar array module;

[0011] S5. Attaching a conductive material to the surface of the common electrode, and electrically connecting the conductive material to an external circuit.

[0012] Preferably, the material of the initial crystal in step S1 includes CZT or CdTe.

[0013] Preferably, the initial crystals with different preset thicknesses in step S1 include low-energy initial crystals and high-energy initial crystals, the thickness of the low-energy initial crystals is 0.5 mm to 1 mm, and the thickness of the high-energy initial crystals is 2 mm to 5 mm.

[0014] Preferably, in step S1, the arrayed pixel electrode is formed on the bottom surface of the initial crystal, and the common electrode is formed on the top surface of the initial crystal.

[0015] Preferably, each of the independent crystal modules in step S2 includes a crystal unit, and arrayed pixel electrodes and a common electrode formed on two opposite sides of the crystal unit.

[0016] Preferably, in step S3, there is a gap between two adjacent independent crystal modules, and the gap is filled with a barrier material.

[0017] Preferably, the size of the gap is 10 μm to 100 μm, and the barrier material includes tungsten or lead.

[0018] Preferably, in step S4, the linear array module includes projections of a plurality of the multi-energy crystal micromodules in the vertical direction arranged in a row; the planar array module includes projections of a plurality of the multi-energy crystal micromodules in the vertical direction arranged in at least two columns.

[0019] Preferably, the electrically connecting method of the conductive material to the external circuit in step S5 includes wire bonding or adhesion.

[0020] The present invention also provides an X-ray detector, which is manufactured by adopting the above-mentioned manufacturing method of the X-ray detector.

[0021] As described above, the X-ray detector and the manufacturing method thereof of the present invention have the following beneficial effects:

[0022] The X-ray detector in the present invention can simultaneously realize efficient detection of low-energy and high-energy X-rays. By using CZT or CdTe crystal materials with different preset thicknesses as initial crystals, these crystals are cut to form independent crystal modules with different preset thicknesses, which are then divided into zones and arranged in a layout to be assembled to form multi-energy crystal micromodules, which are then spliced ​​into linear array modules or planar array modules, so that the detector has both low-energy crystal regions and high-energy crystal regions. It can not only simultaneously realize efficient detection of low-energy and high-energy X-rays, but also realize the unity of high sensitivity and high resolution in low-energy and high-energy X-ray applications, and enhance the ability to identify X-rays of different energies.

[0023] The X-ray detector manufactured by the present invention includes a thinner independent crystal module and a thicker independent crystal module. The thinner independent crystal module belongs to the low-energy crystal region and is used for low-energy X-ray detection, which helps to reduce the transmission distance and transit time of electrons, thereby effectively reducing the pile-up effect; the thicker independent crystal module belongs to the high-energy crystal region and is used for high-energy X-ray detection to improve the absorption efficiency of high-energy X-rays and enhance the performance of the detector; at the same time, the X-ray detector in the present invention maintains a high resolution and signal clarity in both low-energy and high-energy X-ray applications, performs well in medical imaging and industrial detection, can effectively distinguish high-absorption tissue from low-absorption tissue, and improves the accuracy of material identification. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Shown is a process flow chart for manufacturing the X-ray detector of the present invention.

[0025] Figure 2 It is a schematic diagram of the structure after executing step S1 in the method for manufacturing an X-ray detector of the present invention.

[0026] Figure 3 It is a schematic structural diagram of an independent crystal module formed after executing step S2 in the method for manufacturing an X-ray detector of the present invention.

[0027] Figure 4a It is a schematic structural diagram of one of the dual-energy crystal micromodules formed after executing step S3 in the method for manufacturing an X-ray detector of the present invention.

[0028] Figure 4b It is a schematic structural diagram of another multi-energy crystal micromodule formed after executing step S3 in the method for manufacturing an X-ray detector of the present invention.

[0029] Figure 4c It is a schematic structural diagram of another multi-energy crystal micromodule formed after executing step S3 in the method for manufacturing an X-ray detector of the present invention.

[0030] Figure 4dIt is a schematic structural diagram of another multi-energy crystal micromodule formed after executing step S3 in the method for manufacturing an X-ray detector of the present invention.

[0031] Figure 5a It is a schematic plan view of a linear array module formed after executing step S4 in the method for manufacturing an X-ray detector of the present invention.

[0032] Figure 5b It is a schematic plan view of a planar array module formed after executing step S4 in the method for manufacturing an X-ray detector of the present invention.

[0033] Component number description

[0034] 1 Initial crystal

[0035] 2 Pixel Electrode

[0036] 3 Common electrode

[0037] 10 independent crystal modules

[0038] 11 Crystal Unit

[0039] 12 Gap

[0040] 100 Multi-Energy Crystal Modules

[0041] 101 substrate

[0042] 102 Assemble the base

[0043] 200 Line Array Modules

[0044] 300 Area Array Module DETAILED DESCRIPTION

[0045] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] Before further describing the specific embodiments of the present invention, it should be understood that the scope of protection of the present invention is not limited to the specific embodiments described below; it should also be understood that the terms used in the examples of the present invention are intended to describe specific embodiments, rather than to limit the scope of protection of the present invention. The test methods in the following examples without specifying specific conditions are generally carried out under conventional conditions or under conditions recommended by the manufacturers.

[0047] When the embodiments give numerical ranges, it should be understood that, unless otherwise specified in the present invention, both endpoints of each numerical range and any numerical value between the two endpoints can be selected. Unless otherwise defined, all technical and scientific terms used in the present invention have the same meaning as those generally understood by those skilled in the art. In addition to the specific methods, equipment, and materials used in the embodiments, according to the grasp of the prior art by those skilled in the art and the record of the present invention, any methods, equipment, and materials of the prior art similar or equivalent to the methods, equipment, and materials described in the embodiments of the present invention can also be used to realize the present invention.

[0048] Please refer to 1 to 5b. It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed arbitrarily, and the component layout type may also be more complicated.

[0049] See also Figure 1 The present invention provides a method for manufacturing an X-ray detector, the manufacturing method comprising the following steps:

[0050] S1. providing a plurality of initial crystals with different preset thicknesses, wherein the initial crystals include opposite top and bottom surfaces, and forming electrode structures on both surfaces of the initial crystals, wherein the electrode structures include arrayed pixel electrodes and common electrodes;

[0051] S2, each initial crystal of a preset thickness is cut into a plurality of independent crystal modules of corresponding preset thicknesses;

[0052] S3, arranging and positioning a plurality of independent crystal modules with different preset thicknesses on a substrate to form a multi-energy crystal micromodule;

[0053] S4, splicing multiple multi-energy crystal micro-modules to form a linear array or a planar array module;

[0054] S5. Attach a conductive material to the surface of the common electrode and electrically connect the conductive material to an external circuit.

[0055] Specifically, by using initial crystals with different preset thicknesses, these crystals are cut into independent crystal modules with different preset thicknesses, which are then divided into zones and arranged in a layout to form multi-energy crystal micromodules, which are then spliced ​​into linear array modules or planar array modules. This allows the detector to have both low-energy crystal regions and high-energy crystal regions. The low-energy crystal region is used for low-energy X-ray detection, which helps to reduce the transmission distance and transit time of electrons, thereby effectively reducing the pile-up effect. The high-energy crystal region is used for high-energy X-ray detection to improve the absorption efficiency of high-energy X-rays. Not only can it simultaneously achieve efficient detection of low-energy and high-energy X-rays, but it can also achieve the unity of high sensitivity and high resolution in low-energy and high-energy X-ray applications.

[0056] First, step S1 is performed to provide a plurality of initial crystals with different preset thicknesses, wherein the initial crystals include opposite top and bottom surfaces, and electrode structures are formed on both surfaces of the initial crystals, wherein the electrode structures include arrayed pixel electrodes and common electrodes. Figure 2 Schematic diagram of forming electrode structures on both sides of the initial crystal.

[0057] Specifically, the required thickness of the initial crystal is pre-selected according to actual needs, and then the electrode process is performed on each initial crystal respectively, and the common electrode and the pixel electrode are formed on the top surface and the bottom surface of each initial crystal respectively.

[0058] As an example, the material of the initial crystal in step S1 includes CZT or CdTe.

[0059] Specifically, CZT is cadmium zinc telluride, a wide bandgap II-VI compound semiconductor crystal formed by solid solution of CdTe (cadmium telluride) and ZnTe (zinc telluride), with excellent detection performance and wide bandgap; CdTe (cadmium telluride) is also an important II-VI compound semiconductor material.

[0060] As an example, the initial crystals with different preset thicknesses in step S1 include low-energy initial crystals and high-energy initial crystals, the thickness of the low-energy initial crystals is 0.5 mm to 1 mm, and the thickness of the high-energy initial crystals is 2 mm to 5 mm.

[0061] Specifically, the low-energy initial crystal is thinner, and the thinner crystal is used for low-energy X-ray detection. The thickness of the low-energy initial crystal may include any value within the range of 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm, etc. The high-energy initial crystal is thicker, and the thicker crystal is used for high-energy X-ray detection. The thickness of the high-energy initial crystal may include any value within the range of 2mm, 2.5mm, 3mm, 3.5mm, 4mm, 4.5mm, 5mm, etc.

[0062] As an example, in step S1 , the arrayed pixel electrodes are formed on the bottom surface of the initial crystal, and the common electrode is formed on the top surface of the initial crystal.

[0063] Specifically, the method of forming an arrayed pixel electrode on the bottom surface of the initial crystal includes an etching process or a stripping process; the material of the pixel electrode includes one of gold, platinum, and indium metals.

[0064] The steps of forming an array of pixel electrodes on the bottom surface of the initial crystal by etching process include: forming a whole surface of pixel electrodes on the bottom surface of the initial crystal; applying photoresist on the pixel electrodes and patterning them; removing unnecessary pixel electrodes by dry or wet etching; removing the photoresist, that is, completing the array of pixel electrodes. The pixel electrodes formed on the bottom surface of the initial crystal are formed by physical or chemical vapor deposition, or evaporation.

[0065] The steps of forming an arrayed pixel electrode on the bottom surface of the initial crystal through a stripping process include: applying a photoresist on the bottom surface of the initial crystal and patterning it; then forming a pixel electrode on the photoresist by physical or chemical vapor deposition, or evaporation; while stripping the photoresist, the unnecessary pixel electrode portion on the photoresist can be removed and stripped off; thus, an arrayed pixel electrode is formed.

[0066] Specifically, the common electrode is formed by chemical vapor deposition, physical vapor deposition or evaporation, and the material of the common electrode includes one of gold, platinum and silver.

[0067] Then, step S2 is performed, where each initial crystal of a preset thickness is cut into a plurality of independent crystal modules of corresponding preset thicknesses.

[0068] Specifically, high-precision laser cutting or mechanical cutting equipment is used to cut the initial crystal forming the electrode structure in step S1 into multiple independent crystal modules, that is, the entire crystal is cut into the required single crystal. The specific cutting method and the number of independent crystal modules that each initial crystal can be cut into need to be determined according to actual conditions and are not overly limited here. Of course, the independent crystal modules cut from thinner low-energy initial crystals are also correspondingly thinner, and the independent crystal modules cut from thicker high-energy initial crystals are also correspondingly thicker.

[0069] In addition, after cutting, a cleaning step is also required to remove the debris and surface residues generated by cutting.

[0070] For example, see Figure 3 In step S2, each independent crystal module includes a crystal unit, an arrayed pixel electrode and a common electrode formed on two opposite sides of the crystal unit.

[0071] Specifically, each arrayed pixel electrode corresponds to an independent detection area, and the charge collection is limited to the area of ​​the grain unit. By splicing multiple independent crystal modules, efficient detection of low-energy and high-energy X-rays can be achieved at the same time, achieving the unification of high sensitivity and high resolution in low-energy and high-energy X-ray applications.

[0072] Then, step S3 is performed to arrange and position a plurality of independent crystal modules with different preset thicknesses on the substrate to form a multi-functional crystal micromodule.

[0073] Specifically, a plurality of independent crystal modules with different preset thicknesses are arranged. Usually, independent crystal modules with different thicknesses can be evenly and dispersedly placed according to actual needs. There is no specific rule. Of course, they can also be placed regularly as needed. There is no restriction on the specific number of placements.

[0074] Specifically, a plurality of independent crystal modules of different preset thicknesses are arranged and positioned on a substrate, and when positioned on the substrate, a patch, assembly or flip chip soldering method is adopted, wherein the substrate includes a chip or an adapter board. During the patch process, an SMT patch machine or a FlipChip patch machine is used for patching, and the independent crystal module is quickly and accurately mounted on the pad position specified by the substrate.

[0075] In addition, all independent crystal modules may be arranged and positioned on the same substrate, or independent crystal modules with different preset thicknesses may be arranged and positioned on different substrates.

[0076] In a specific embodiment of the present invention, a thinner independent crystal module and a thicker independent crystal module are arranged horizontally and positioned on the same substrate, and the multi-energy crystal micromodule formed is a dual-energy crystal micromodule, see Figure 4a ,The pixel electrodes of the dual-energy crystal micromodule are located on the same surface, and there is a height difference between the common electrodes.

[0077] In another specific embodiment of the present invention, four independent crystal modules with different preset thicknesses are arranged and positioned on the same substrate to form a multi-energy crystal micromodule, see Figure 4b ,The pixel electrodes of the multi-energy crystal micromodule are located on the same surface, and there is a height difference between the common electrodes. Figure 4a and Figure 4b The pixel electrodes in the multi-energy crystal module presented in the figure are of equal surfaces, which makes patching easier because the patch surfaces are at the same height and there is no need to re-identify the reference surface of the patch.

[0078] In another specific embodiment of the present invention, a thinner independent crystal module and a thicker independent crystal module are respectively positioned on corresponding substrates, and then the common electrodes of each independent crystal module are positioned on the same surface through an assembly base, thereby forming a dual-energy crystal micromodule, see Figure 4c .

[0079] In another specific embodiment of the present invention, four independent crystal modules with different preset thicknesses are respectively positioned on corresponding substrates, and then the common electrodes of each independent crystal module are positioned on the same surface by assembling the base, thereby forming a multi-energy crystal micromodule, see Figure 4d . Figure 4c and Figure 4d The common electrode and other surfaces in the multi-energy crystal module shown in the figure need to be adjusted using an assembly base during the patch process.

[0080] As an example, in step S3 , there is a gap between two adjacent independent crystal modules, and the gap is filled with a barrier material (not shown in the figure).

[0081] As an example, the size of the gap is 10 μm to 100 μm, and the barrier material includes tungsten or lead.

[0082] Specifically, the gap between two adjacent independent crystal modules is used to reduce photon escape and signal loss. The gap size may include values ​​within any range such as 10μm, 15μm, 20μm, 40μm, 60μm, 80μm, 90μm, 100μm, etc. When the adjacent gap is too small, the substrate may warp during transportation or use, thereby causing collision between adjacent independent crystal modules, resulting in edge collapse or damage of the independent crystal modules.

[0083] Specifically, a blocking material is filled in the gap. The blocking material is a highly absorbent material used to block the scattering of high-energy X-rays or the escape of electrons between independent crystal modules. The blocking material can be filled in the gap by nano-deposition or electrochemical deposition to ensure the signal independence of the formed multi-energy crystal micromodule.

[0084] Next, step S4 is executed to splice a plurality of multi-energy crystal micro-modules to form a linear array or planar array module.

[0085] Specifically, this process is to splice multiple integral multi-energy crystal micro-modules. The splicing can be done manually through tooling fixtures, or by automatic multi-axis splicing machines that automatically identify alignment and grab placement, and then fixed with structural adhesives or screws, limit columns, etc. to ensure the distribution of each multi-energy crystal micro-module and the accuracy of the splicing position.

[0086] For example, see Figure 5aIn step S4, the linear array module includes a plurality of multi-energy crystal micro-modules whose projections in the vertical direction are arranged in a row; see Figure 5b The surface array module includes a plurality of multi-energy crystal micromodules whose projections in the vertical direction are arranged into at least two rows.

[0087] In a specific embodiment of the present invention, refer to Figure 5a This is a plan view of a linear array module composed of four multi-energy crystal micromodules; see Figure 5b The schematic diagram of the planar array module is a planar array module formed by splicing four multi-energy crystal modules. The figure only shows the splicing of four multi-energy crystal micro-modules. Of course, the number of multi-energy crystal micro-modules can also be 2, 3, 5, etc. The specific number is not excessively limited here.

[0088] Finally, step S5 is performed to attach a conductive material to the surface of the common electrode and electrically connect the conductive material to an external circuit.

[0089] As an example, the method of electrically connecting the conductive material to the external circuit in step S5 includes wire bonding or adhesion.

[0090] Specifically, the conductive material includes one of copper, aluminum, and gold metals; the conductive material on the surface of the common electrode is connected to the high-voltage terminal by wire bonding to achieve electrical lead-out of the common electrode, or the conductive material on the surface of the common electrode is connected to the high-voltage terminal by adhesion of the conductive material.

[0091] The present invention also provides an X-ray detector, which is manufactured by adopting the manufacturing method of the X-ray detector.

[0092] Specifically, the X-ray detector includes: a linear array module or a planar array module, wherein the linear array module or the planar array module is composed of a plurality of multi-energy crystal micromodules; the multi-energy crystal micromodule includes a substrate and a plurality of independent crystal modules arranged and positioned on the substrate, and the substrate includes at least one substrate; the independent crystal module includes a grain unit, an arrayed pixel electrode and a common electrode, the arrayed pixel electrode is formed on the bottom surface of the grain unit, the common electrode is formed on the top surface of the grain unit, and the grain unit is cut from initial crystals of different preset thicknesses.

[0093] In summary, the X-ray detector in the present invention can simultaneously realize efficient detection of low-energy and high-energy X-rays. By using CZT or CdTe crystal materials with different preset thicknesses as initial crystals, these crystals are cut to form independent crystal modules with different preset thicknesses, which are then divided into zones and arranged and assembled to form multi-energy crystal micromodules, which are then spliced ​​into linear array modules or planar array modules, so that the detector has both low-energy crystal regions and high-energy crystal regions. It can not only simultaneously realize efficient detection of low-energy and high-energy X-rays, but also realize the unity of high sensitivity and high resolution in low-energy and high-energy X-ray applications, and enhance the ability to identify X-rays of different energies. The X-ray detector made by the present invention includes a thinner independent crystal module and a thicker independent crystal module. The thinner independent crystal module belongs to the low-energy crystal region and is used for low-energy X-ray detection, which helps to reduce the transmission distance and transit time of electrons, thereby effectively reducing the pile-up effect; the thicker independent crystal module belongs to the high-energy crystal region and is used for high-energy X-ray detection to improve the absorption efficiency of high-energy X-rays and enhance the performance of the detector; at the same time, the X-ray detector in the present invention maintains a high resolution and signal clarity in both low-energy and high-energy X-ray applications, performs well in medical imaging and industrial detection, can effectively distinguish high-absorption tissue from low-absorption tissue, and improves the accuracy of material identification. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0094] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for manufacturing an X-ray detector, characterized in that: The production method comprises the following steps: S1. providing a plurality of initial crystals with different preset thicknesses, wherein the initial crystals include opposite top and bottom surfaces, and forming electrode structures on both surfaces of the initial crystals, wherein the electrode structures include arrayed pixel electrodes and common electrodes; S2, each of the initial crystals of a preset thickness is cut into a plurality of independent crystal modules of corresponding preset thicknesses; S3, arranging and positioning a plurality of independent crystal modules of different preset thicknesses on a substrate to form a multi-energy crystal micromodule; S4, splicing a plurality of the multi-energy crystal micro-modules to form a linear array or a planar array module; S5. Attaching a conductive material to the surface of the common electrode, and electrically connecting the conductive material to an external circuit.

2. The method for manufacturing an X-ray detector according to claim 1, characterized in that: The material of the initial crystal in step S1 includes CZT or CdTe.

3. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S1, the initial crystals with different preset thicknesses include low-energy initial crystals and high-energy initial crystals. The thickness of the low-energy initial crystals is 0.5 mm to 1 mm, and the thickness of the high-energy initial crystals is 2 mm to 5 mm.

4. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S1, the arrayed pixel electrode is formed on the bottom surface of the initial crystal, and the common electrode is formed on the top surface of the initial crystal.

5. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S2 , each of the independent crystal modules includes a crystal unit, and arrayed pixel electrodes and a common electrode formed on two opposite sides of the crystal unit.

6. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S3, there is a gap between two adjacent independent crystal modules, and the gap is filled with a barrier material.

7. The method for manufacturing an X-ray detector according to claim 6, characterized in that: The size of the gap is 10 μm to 100 μm, and the barrier material includes tungsten or lead.

8. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S4, the linear array module includes projections of multiple multi-energy crystal micromodules in the vertical direction arranged in a row; the planar array module includes projections of multiple multi-energy crystal micromodules in the vertical direction arranged in at least two columns.

9. The method for manufacturing an X-ray detector according to claim 1, characterized in that: The electrically connecting method of the conductive material to the external circuit in step S5 includes wire bonding or adhesion.

10. An X-ray detector, characterized in that: The X-ray detector is manufactured by the manufacturing method of the X-ray detector according to any one of claims 1 to 9.

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