Batch transfer method and application of MicroLED chips
By using hexagonal Micro-LED chips and laser selective peeling technology, the problems of sidewall damage and laser transfer difficulty in the prior art are solved, and higher transfer accuracy and luminous efficiency are achieved.
Patent Information
- Application Number
- CN202510233561.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-28
- Publication Date
- 2025-05-13
AI Technical Summary
During the manufacturing process, the luminous efficiency of existing Micro-LED chips is reduced due to side wall damage, and laser transfer technology is difficult to achieve uniformity, which increases the difficulty of operation.
The chip is transferred from the first substrate to the second substrate by laser selective peeling technology. The laser is flattened to form a circular spot, reducing side wall damage and laser shaping difficulty.
It significantly improves the accuracy and yield of the huge transfer of Micro-LED, reduces the difficulty of operation, and increases the effective luminous area of the chip.
Smart Images
Figure CN119997704A_ABST
Abstract
Description
Technical Field
[0001] The present application specifically relates to a batch transfer method and application of MicroLED chips, and belongs to the technical field of optoelectronic devices. Background Art
[0002] Micro-LED is a new display technology widely developed by industry and academia because of its high brightness, high reliability, and self-luminescence.
[0003] As the size of Micro-LED is reduced, the proportion of the sidewall to the overall chip is increasing. Since the edge of Micro-LED is generally achieved by etching, etching will cause damage to the sidewall, causing non-radiative recombination of electrons and holes on the sidewall, thereby reducing the luminous efficiency. Figure 1 An existing rectangular Micro-LED chip array is shown, in which the chip sidewall accounts for a high proportion, and this defect is particularly obvious.
[0004] At the same time, currently, the mass transfer of Micro-LED is mainly achieved by laser. Laser transfer is achieved by peeling the LED grains from the original substrate. Specifically, high-energy laser irradiates the GaN layer, and GaN decomposes to produce Ga and N2 gas. The N2 gas expands violently and impacts the LED grains onto the corresponding carrier. Therefore, Micro-LED requires the laser to have as uniform energy as possible to ensure that the degree of GaN decomposition on the entire LED grain is as similar as possible. However, the light directly generated by the laser is Gaussian light with Gaussian distribution characteristics, that is, the energy density of the light is highest in the middle and decays rapidly around it, such as Figure 2-Figure 3 As shown. In order to ensure laser uniformity, a common method is to shape the laser through the optical path, such as flattening the light, that is, only using a portion of the light with relatively uniform energy in the middle and discarding the edge portion. Theoretically, shaping the laser into a circular flat-top light can achieve the best uniformity, such as Figure 4-Figure 5 However, in the production of Micro-LED, in order to ensure that the number of Micro-LED chips on the same batch of substrates is as large as possible, it is usually necessary to use a densely arranged rectangular array instead of a circular array. In this case, the laser needs to be shaped into a rectangular flat top light. Figure 6-Figure 7 As shown, this places higher demands on laser shaping and makes the operation more difficult. Summary of the invention
[0005] The main purpose of this application is to provide a method and application for batch transfer of MicroLED chips to overcome the shortcomings of the prior art.
[0006] In order to achieve the aforementioned invention objectives, the technical solutions adopted in this application include:
[0007] A first aspect of the present application provides a method for batch transferring Micro LED chips, which includes:
[0008] Providing a first substrate, on which a plurality of hexagonal Micro LED chips are disposed;
[0009] At least one of the chips is selectively separated from the first substrate using a laser and bonded to a second substrate.
[0010] Furthermore, the laser is flattened, and the light spot formed by the laser at the junction of the chip and the first substrate is circular.
[0011] The second aspect of the present application provides the use of the batch transfer method of the Micro LED chips in the preparation of Micro LED display devices, etc.
[0012] Exemplarily, some embodiments of the present application provide a Micro LED chip packaging method for realizing secondary packaging of the hexagonal Micro-LED chip, which includes:
[0013] The batch transfer method of the Micro LED chips is used to transfer the plurality of hexagonal Micro LED chips on the first substrate to the second substrate to form a Micro LED chip array;
[0014] A light conversion unit is provided, the light conversion unit comprising a first light blocking layer, a light filter layer, a light conversion layer, a protective layer, a bonding layer and a second light blocking layer, the light filter layer, the light conversion layer, the first protective layer, the bonding layer and the second light blocking layer are stacked in sequence, the light filter layer comprises a plurality of light filter structures arranged at intervals, the light conversion layer comprises a plurality of light conversion structures arranged at intervals, each of the light filter structures is arranged corresponding to a light conversion structure and constitutes a light processing structure, the first light blocking layer comprises a light blocking material arranged between adjacent light processing structures, and is used to form light isolation between adjacent light processing structures;
[0015] The Micro LED chip array is combined with the light conversion unit through the bonding layer, and the light blocking material contained in the first light blocking layer is distributed between adjacent Micro LED chips to form optical isolation between adjacent Micro LED chips.
[0016] Compared with the prior art, the present application uses hexagonal Micro-LED chips in the Micro-LED manufacturing process, which can not only reduce the proportion of the side wall in the overall chip, but also reduce the difficulty of laser transfer. For example, it can simultaneously ensure the dense arrangement of Micro-LED chips and the uniformity of laser flattening, thereby significantly improving the accuracy and yield of Micro-LED mass transfer and reducing its operation difficulty. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present application and, together with the description, serve to further explain the present application and enable those skilled in the art to make and use the present application.
[0018] Figure 1 It is a schematic diagram of a rectangular array formed by densely arranging rectangular Micro-LED chips in the prior art;
[0019] Figure 2-Figure 3 The three-dimensional and two-dimensional images of the laser (Gaussian light) before shaping are shown respectively;
[0020] Figure 4-Figure 5 The three-dimensional and two-dimensional images of laser light (Gaussian light) after rectangular flattening are shown respectively;
[0021] Figure 6-Figure 7 The three-dimensional and two-dimensional images of the laser (Gaussian light) after circular flattening are shown respectively;
[0022] Figure 8 is a schematic diagram of a dense array of regular hexagonal Micro-LED chips in one embodiment of the present application;
[0023] Fig. 9 This is a schematic diagram of the structure of a regular hexagonal Micro-LED chip in one embodiment of the present application;
[0024] Fig.10 This is a schematic diagram of laser lift-off of a regular hexagonal Micro-LED chip using circular flattening in one embodiment of the present application:
[0025] Fig.11 is a schematic diagram of a dense array of hexagonal Micro-LED chips in another embodiment of the present application;
[0026] Fig.12 It is a schematic diagram of an existing rectangular Micro-LED chip;
[0027] Fig.13 This is a schematic diagram of an existing square Micro-LED chip;
[0028] Fig.14is a schematic diagram of a hexagonal Micro-LED chip in an implementation case of the present application;
[0029] Fig.15 is a schematic diagram of a regular hexagonal Micro-LED chip in another embodiment of the present application;
[0030] Fig.16 This is a schematic diagram of a method of batch transferring hexagonal Micro-LED chips using laser in an implementation example of the present application;
[0031] Fig.17 is a schematic diagram of a method of batch transferring hexagonal Micro-LED chips using laser in another embodiment of the present application;
[0032] Fig.18 It is a schematic diagram of batch transfer and electrode rewiring of hexagonal Micro-LED chips in an implementation case of the present application;
[0033] Fig.19 is a schematic diagram of batch transfer and electrode rewiring of hexagonal Micro-LED chips in another embodiment of the present application;
[0034] Fig. 20 This is a schematic diagram of the packaging structure formed by packaging the hexagonal Micro-LED chips after batch transfer. DETAILED DESCRIPTION
[0035] The technical solution of this application, its implementation process and principle are further explained as follows.
[0036] It should be noted that, although specific configurations and arrangements have been discussed, it should be understood that this is done for illustrative purposes only. Therefore, other configurations and arrangements may be used without departing from the scope of the present application. Moreover, the present application may also be adopted in a variety of other applications. The functions and structural features described in the present application may be combined, adjusted and modified with each other in a variety of ways not specifically shown in the accompanying drawings, so that these combinations, adjustments and modifications are within the scope of the present application.
[0037] In general, terms may be understood at least in part based on usage in context. For example, the term "one or more" as used in this specification may be used to describe any component, structure, or feature in the singular, or may be used to describe a combination of components, structures, or features in the plural, depending at least in part on the context. Similarly, terms such as "one," "an," or "the" may also be understood to convey singular usage or to convey plural usage, depending at least in part on the context. In addition, the term "based on..." may be understood to not necessarily be intended to convey a set of exclusive factors, but may instead allow for the presence of additional factors that do not necessarily have to be explicitly described, depending at least in part on the context.
[0038] It should be easily understood that the meaning of “on,” “over,” and “on” in the present application should be interpreted in the broadest manner, so that “on” not only means “directly on something,” but also means “on something” including the presence of intermediate components or layers therebetween, and “on something” or “on something” not only means “on something” or “over something,” but also includes the meaning of “on something” or “over something” without any intermediate components or layers therebetween.
[0039] In addition, for ease of description, spatially relative terms such as "below", "beneath", "lower", "above", "upper", etc. may be used in this specification to describe the relationship of one element or component to another element or component shown in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or in other orientations), and the spatially relative descriptors used in this specification may be interpreted accordingly.
[0040] Some embodiments of the present application provide a method for batch transferring Micro LED chips, which includes:
[0041] Providing a first substrate, on which a plurality of hexagonal Micro LED chips are disposed;
[0042] At least one of the chips is selectively separated from the first substrate using a laser and bonded to a second substrate.
[0043] In one embodiment, the chip is grown on a first substrate, that is, the first substrate is a growth substrate of the Micro LED chip.
[0044] Furthermore, the material of the first substrate may be selected from, but not limited to, sapphire, silicon nitride, GaN, silicon, etc. The second substrate may be made of the same or different material as the first substrate, such as polymer, glass, etc., but not limited to these.
[0045] Furthermore, the chip may be formed by directly processing a semiconductor material layer grown on the first substrate, or may be combined on the first substrate by means of adhesion, bonding, etc.
[0046] Furthermore, the chip may include a Micro LED chip based on III-V compounds such as GaN, AlGAN, InN, AlInGaN, etc., and in some cases it may also be a Mini LED chip, etc., but is not limited thereto.
[0047] Furthermore, at least part of the material in the bonding area between the chip and the first substrate can be decomposed under the irradiation of the laser, so that the chip is separated from the first substrate.
[0048] Furthermore, the wavelength, power and irradiation time of the laser can be determined according to actual conditions.
[0049] For example, the chip is a GaN-based chip, and the material of the area where it is combined with the first substrate is GaN, which can be decomposed into Ga and nitrogen under laser irradiation of a certain power, thereby releasing the connection between the chip and the first substrate and realizing laser peeling of the chip.
[0050] In one embodiment, a plurality of the chips are densely arranged on the first substrate.
[0051] In one embodiment, the hexagon is a regular hexagon. Alternatively, the hexagon is a non-equilateral hexagon, where two adjacent sides have different lengths and two opposite sides have the same length. In particular, the non-equilateral hexagonal Micro LED chip is more compatible with the structure of existing products when actually used.
[0052] Furthermore, in the present application, the chip is hexagonal, which means that the chip has a hexagonal outline when viewed from a direction perpendicular to the light-emitting surface of the chip. In fact, the chip can be in the shape of a hexagonal prism.
[0053] For example, Figure 8 , Fig.11 Two types of Micro LED chips in different implementation cases of the present application are respectively shown, which are regular hexagons and non-equilateral hexagons, and are densely arranged on the first substrate. Fig. 9 That is, it shows a more specific structure of a regular hexagonal GaN-based Micro LED chip.
[0054] In one embodiment, the laser is flattened, and the spot formed by the laser at the junction of the chip and the first substrate is circular. This can make the energy distribution of the laser spot more uniform, reduce the difficulty of laser shaping, and also match the shape of the Micro LED chip. For example, see Fig.10 , wherein the dotted line shows a Micro LED chip in the present application, and the junction between the Micro LED chip and the first substrate can be fully covered by a circular flattened laser spot.
[0055] In the present application, by using a hexagonal Micro-LED chip, the proportion of the side wall in the overall chip can be effectively reduced, and the effective light-emitting area of the chip can be significantly increased.
[0056] by Figure 12-Figure 15 Taking the rectangular, square, non-equilateral hexagonal and regular hexagonal Micro LED chips shown in the figure as examples, their Cell size (chip spacing on the wafer), ISO size (actual chip size) and Mesa size (chip effective light-emitting area size) are shown in Table 1.
[0057]
[0058]
[0059] In one embodiment, the method for batch transferring Micro LED chips specifically includes: using a laser to separate a plurality of the chips from a first substrate simultaneously or in a set order, and bonding them to a second substrate.
[0060] Exemplarily, the plurality of chips disposed on the first substrate include a first chip and a second chip, and the first chip and the second chip have a first distance in a specified direction; and the method specifically includes:
[0061] Using laser to separate the first chip from the first substrate and bond it to the second substrate;
[0062] The first substrate and the second substrate are moved relative to each other in a specified direction, and the second chip is separated from the first substrate by laser and bonded to the second substrate, so that the first chip and the second chip have a second distance in the specified direction, which is different from the first distance.
[0063] In a more specific implementation case of the present application, it is assumed that the first substrate and the second substrate are both arranged parallel to a one-dimensional plane, and the surface of the first substrate on which the plurality of chips are distributed is arranged opposite to the surface of the second substrate for receiving the chips. If the first substrate and the second substrate remain relatively still during the transfer of the Micro LED chip, please refer to Fig.16, laser can be used to selectively make the chips numbered 1, 2, 3, 4, 5, and 6 in the dense array of Micro LED chips detach from the first substrate simultaneously or sequentially and transfer them to the second substrate, while keeping the relative distance between these chips unchanged. This method is beneficial for completing the batch transfer of multiple chips at one time.
[0064] When transferring Micro LED chips, the distance between the chips needs to be changed. Fig.17 , laser can be used to selectively separate the chips numbered 1, 2, 3, 4, 5, and 6 in the dense array of Micro LED chips from the first substrate in sequence and transfer them to the second substrate. In this process, the first substrate and the second substrate can be moved along the x-direction and / or the y-direction according to expected needs, so that the relative distance between these chips on the second substrate reaches the expected value.
[0065] In addition, the arrangement direction of the Micro LED chips can be changed when they are transferred from the first substrate to the second substrate by rotating the first substrate and the second substrate relative to each other.
[0066] In one embodiment, the method for batch transferring Micro LED chips specifically includes: electrically connecting the plurality of chips bonded to the second substrate with a conductive circuit disposed on the second substrate.
[0067] For example, please refer to Fig.18 , multiple chips in the dense array of Micro LED chips can be selectively transferred from the first substrate to the second substrate in the manner described above, and the relative positions of the multiple chips on the second substrate can be adjusted in the process, and then electrode wiring is performed on the second substrate to electrically connect the electrodes of the multiple chips to the conductive circuits.
[0068] In one embodiment, the batch transfer method of the Micro LED chips specifically includes: defining at least one pixel area on the surface of the second substrate, each of the pixel areas is used to set at least three of the chips to form a corresponding pixel unit.
[0069] For example, please refer to Fig.19, the chips numbered 1, 2, and 3 in the dense array of Micro LED chips can be selectively transferred from the first substrate to a pixel area on the surface of the second substrate in the manner described above, and the electrodes of the three chips can be electrically connected to the corresponding electrode pads through electrode wiring. In order to simplify the circuit connection structure, one electrode of each chip can be connected to a corresponding electrode of the other two chips and then connected to a corresponding electrode pad, forming a common electrode structure. The three chips distributed in the same pixel area can emit light of different wavelengths, such as red, green, and blue light, or they can emit light of the same wavelength, such as blue light. In the subsequent packaging, by adding a light wavelength conversion structure formed by phosphors or quantum dots, the pixel area can present multiple colors to the outside.
[0070] Some embodiments of the present application provide a Micro LED chip packaging method, which includes:
[0071] The batch transfer method of the Micro LED chips is used to transfer the plurality of hexagonal Micro LED chips on the first substrate to the second substrate to form a Micro LED chip array;
[0072] A light conversion unit is provided, the light conversion unit comprising a first light blocking layer, a light filter layer, a light conversion layer, a protective layer, a bonding layer and a second light blocking layer, the light filter layer, the light conversion layer, the first protective layer, the bonding layer and the second light blocking layer are stacked in sequence, the light filter layer comprises a plurality of light filter structures arranged at intervals, the light conversion layer comprises a plurality of light conversion structures arranged at intervals, each of the light filter structures is arranged corresponding to a light conversion structure and constitutes a light processing structure, the first light blocking layer comprises a light blocking material arranged between adjacent light processing structures, and is used to form light isolation between adjacent light processing structures;
[0073] The Micro LED chip array is combined with the light conversion unit through the bonding layer, and the light blocking material contained in the first light blocking layer is distributed between adjacent Micro LED chips to form optical isolation between adjacent Micro LED chips.
[0074] In one embodiment, the first protective layer includes an organic protective layer and an inorganic protective layer stacked in sequence in a direction away from the bonding layer.
[0075] In one embodiment, the Micro LED chip packaging method specifically includes:
[0076] Separating the second substrate from the Micro LED chip array to expose the first surface of the Micro LED chip array;
[0077] Bonding the second surface of the Micro LED chip array to the bonding layer, wherein the second surface is opposite to the first surface;
[0078] A filling layer is formed on the first surface of the Micro LED chip array, and at least a portion of the filling material contained in the filling layer is filled between the plurality of Micro LED chips, and electrodes of the plurality of Micro LED chips are exposed therefrom;
[0079] A conductive layer and a second protective layer are sequentially arranged on the leveling layer, and the conductive layer is electrically connected to electrodes of a plurality of MicroLED chips, and at least part of the protective material contained in the second protective layer is filled between the conductive circuits contained in the conductive layer.
[0080] In one embodiment, the first light-blocking layer and the second light-blocking layer are mainly made of opaque organic materials (such as black resin), inorganic materials (such as Cr, chromium oxide) or composite materials thereof, and can be black, white or other colors. For example, the first light-blocking layer and the second light-blocking layer can use a black matrix (BM). And the thickness of the first light-blocking layer and the second light-blocking layer can be determined according to actual needs.
[0081] In one embodiment, the filter layer may include a plurality of filters, such as red light, blue light, green light filters, etc.
[0082] In one embodiment, the light conversion structure in the light conversion layer can be a film or layer structure, and can be composed of a film-forming material such as epoxy resin, silicone resin, etc. with good light transmittance, or the film-forming material and a phosphor with wavelength conversion function, quantum dots, etc. The thickness of the film or layer structure can be determined according to actual needs. The quantum dots can be selected from various types of quantum dots known in the art, for example, quantum dots containing elements such as cadmium, lead, tin, indium, chlorine, iodine, sulfur, tellurium, phosphorus, etc., or perovskite quantum dots.
[0083] In one embodiment, the first protective layer and the second protective layer can provide good protection for the light conversion layer by reducing the water oxygen permeability. Further, the inorganic protective layer can be selected from but not limited to a combination of one or more of SiO2, Si3N4, Al2O3, AlN, TiO2, and HfO2. The material of the organic inclusion layer can be a light-transmitting organic material, including photoresist, UV, thermosetting adhesive, etc., but is not limited thereto.
[0084] In one embodiment, the bonding layer may be mainly made of a light-transmitting adhesive material, such as transparent optical adhesive (OCA), etc., but is not limited thereto.
[0085] In one embodiment, the filling layer may be made of an inorganic material, an organic material or a composite material thereof, such as but not limited to polyimide, acrylic resin, SiO2 and the like.
[0086] In one embodiment, the second protective layer can also function as a planarization layer, and can be made of a light-transmitting organic material, such as but not limited to photoresist, UV, thermosetting adhesive, etc.
[0087] In one embodiment, the conductive layer includes a single metal layer or a plurality of metal layers stacked together, and the material of the metal layer includes but is not limited to a combination of one or more metals such as Cr, Ti, Al, Cu, Au, Ag, Sn, or their alloys. In some cases, the conductive layer can also be considered as a stacked wire.
[0088] In one embodiment, the light conversion unit may further include a transparent substrate, on which the filter layer, light conversion layer, first protective layer, bonding layer and second light blocking layer may be stacked in sequence. The transparent substrate may be selected from but not limited to glass or sapphire substrate.
[0089] In a more specific implementation case of the present application, after a plurality of hexagonal Micro LED chips are transferred from a first substrate to a second substrate by laser to form a Micro LED chip array, a packaging process is performed according to the following steps to form Fig. 20 The packaging structure shown. The packaging process specifically includes:
[0090] S1. Provide a light-transmitting substrate 1 such as a sapphire or glass substrate.
[0091] S2. A filter layer is formed on the surface of the transparent substrate, including a red filter film (R-CF) 201, a green filter film (G-CF) 202 and a blue filter film 203 spaced apart from each other. The blue filter film can also be replaced by a colorless transparent film, i.e., a blank filter film (B-CF). The thickness of these filter films can be 1 to 3 μm. The spacing of the filter films can be determined according to the distance of the Micro LEDs.
[0092] S3, using photolithography or other methods, a black matrix layer (BM) is disposed on the area of the surface of the transparent substrate not covered by the filter layer to form a first light blocking layer 3. The height of the first light blocking layer is higher than the filter layer.
[0093] S4. Use photolithography or inkjet printing to make a red quantum dot light conversion layer (R-QD) 401 and a green quantum dot light conversion layer (G-QD) 402 on the red filter film and the green filter film, respectively, and make a transparent layer (Blank) 403 on the blue filter film to form a plurality of light conversion structures, thereby obtaining a light conversion layer. The adjacent light conversion structures are blocked by the BM layer to prevent light from being transmitted between adjacent light conversion structures, thereby causing light crosstalk. Preferably, the side walls of each light conversion structure are tightly attached to the first light blocking layer. Preferably, the surface of the first light blocking layer is preferably flush with the surface of the light conversion layer.
[0094] S5. Deposit SiO2, Si3N4, Al2O3, AlN, TiO2 or HfO2 or other materials on the light conversion layer and the first light blocking layer by ALD (atomic layer deposition) or PECVD (plasma enhanced chemical vapor deposition) to form a continuous inorganic protective layer 5.
[0095] S6. Coating a light-transmitting organic material such as photoresist, UV, thermosetting adhesive, etc. on the inorganic protective layer by scraping, spin coating, spraying, printing, etc. to form a continuous organic protective layer 6, thereby forming a first protective layer.
[0096] S7, coating the organic protective layer with light-transmitting organic materials such as photoresist, UV, thermosetting adhesive, etc. by scraping, spin coating, spraying, printing, etc. to form a bonding layer 7.
[0097] S8. Dispose a black matrix layer (BM) on the bonding layer by using photolithography or other methods to form a second light blocking layer 8.
[0098] S9, bonding the Micro LED chip array to the bonding layer, and filling the black matrix layer constituting the second light-blocking layer between adjacent Micro LED chips 9.
[0099] S10, coating the Micro LED chip array with a light-transmitting organic material such as photoresist, UV, thermosetting adhesive, etc. by scraping, spin coating, spraying, printing, etc. to form a filling layer 10, and exposing the electrodes of each Micro LED chip from the filling layer.
[0100] S11, forming a conductive layer 11 on the filling layer by sputtering, evaporation or the like, and electrically connecting the electrodes of each Micro LED chip to the conductive layer.
[0101] S12, coating the fill-level layer with a light-transmitting organic material such as photoresist, UV, or thermosetting adhesive by scraping, spin coating, spraying, or printing to form a second protective layer 12, and at the same time, planarizing the surface of the package structure formed.
[0102] The packaging method of this embodiment, combined with the hexagonal Micro LED chip, can effectively ensure and improve the quality, working stability, service life, etc. of the Micro LED display module. In particular, when the product area is the same, higher display brightness and resolution can be obtained.
[0103] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present application, and their purpose is to enable people familiar with the technology to understand the content of the present application and implement it accordingly, and they cannot be used to limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit of the present application should be included in the protection scope of the present application.
Claims
1. A method for batch transfer of Micro LED chips, characterized in that: include: Providing a first substrate, on which a plurality of hexagonal Micro LED chips are disposed; At least one of the chips is selectively separated from the first substrate using a laser and bonded to a second substrate.
2. The method for batch transferring Micro LED chips according to claim 1, wherein: The chip is grown on the first substrate; and / or, a plurality of the chips are densely arranged on the first substrate; and / or, the hexagon is a regular hexagon, or, two adjacent sides of the hexagon have different lengths, and two opposite sides have the same lengths.
3. The method for batch transferring Micro LED chips according to claim 1, wherein: The laser is flattened, and a light spot formed by the laser at the junction of the chip and the first substrate is circular.
4. The method for batch transferring Micro LED chips according to claim 1, wherein: Specifically include: The plurality of chips are separated from the first substrate simultaneously or in a set order by using laser, and then bonded to the second substrate.
5. The method for batch transferring Micro LED chips according to claim 4, wherein: The plurality of chips disposed on the first substrate include a first chip and a second chip, wherein the first chip and the second chip have a first distance in a specified direction; and the method specifically includes: Using laser to separate the first chip from the first substrate and bond it to the second substrate; The first substrate and the second substrate are moved relative to each other in a specified direction, and the second chip is separated from the first substrate by laser and bonded to the second substrate, so that the first chip and the second chip have a second distance in the specified direction, which is different from the first distance.
6. The method for batch transferring Micro LED chips according to claim 1, wherein: Specifically include: The plurality of chips bonded on the second substrate are electrically connected to conductive circuits disposed on the second substrate.
7. The method for batch transferring Micro LED chips according to claim 1, wherein: Specifically include: At least one pixel region is defined on the surface of the second substrate, and each pixel region is used to arrange at least three chips to form a corresponding pixel unit.
8. A Micro LED chip packaging method, characterized in that: include: Transferring the plurality of hexagonal Micro LED chips on the first substrate to the second substrate using the method of any one of claims 1 to 7 to form a Micro LED chip array; A light conversion unit is provided, the light conversion unit comprising a first light blocking layer, a light filter layer, a light conversion layer, a protective layer, a bonding layer and a second light blocking layer, the light filter layer, the light conversion layer, the first protective layer, the bonding layer and the second light blocking layer are stacked in sequence, the light filter layer comprises a plurality of light filter structures arranged at intervals, the light conversion layer comprises a plurality of light conversion structures arranged at intervals, each of the light filter structures is arranged corresponding to a light conversion structure and constitutes a light processing structure, the first light blocking layer comprises a light blocking material arranged between adjacent light processing structures, and is used to form light isolation between adjacent light processing structures; The Micro LED chip array is combined with the light conversion unit through the bonding layer, and the light blocking material contained in the first light blocking layer is distributed between adjacent Micro LED chips to form optical isolation between adjacent Micro LED chips.
9. The Micro LED chip packaging method according to claim 8, wherein: The first protective layer includes an organic protective layer and an inorganic protective layer which are sequentially stacked in a direction away from the bonding layer.
10. The Micro LED chip packaging method according to claim 8, wherein: Specifically include: Separating the second substrate from the Micro LED chip array to expose the first surface of the Micro LED chip array; Bonding the second surface of the Micro LED chip array to the bonding layer, wherein the second surface is opposite to the first surface; A filling layer is formed on the first surface of the Micro LED chip array, and at least a portion of the filling material contained in the filling layer is filled between the plurality of Micro LED chips, and electrodes of the plurality of Micro LED chips are exposed therefrom; A conductive layer and a second protective layer are sequentially arranged on the leveling layer, and the conductive layer is electrically connected to electrodes of a plurality of Micro LED chips, and at least part of the protective material contained in the second protective layer is filled between the conductive circuits contained in the conductive layer.