Chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance

Abstract

The present invention relates to a chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance as a photoresist composition capable of exposure with a light source having a wavelength of 248 nm, characterized by comprising a hydroxyl group-containing phenol polymer resin represented by chemical formula 4, the hydroxyl group-containing phenol polymer resin is obtained by selecting one of compounds represented by Chemical Formula 1 to Chemical Formula 3 as an effective monomer for etching resistance and copolymerizing the selected monomer. Compared with the existing positive photoresist, the positive photoresist provided by the invention has the advantages that a vertical profile is realized, and an excellent etching resistance effect is shown.

Description

Technical Field

[0001] The present invention relates to a chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance, which is characterized by comprising a hydroxyl-containing phenol polymer resin, wherein the hydroxyl-containing phenol polymer resin is selected and copolymerized with a new monomer effective for etching resistance. Background Art

[0002] Recently, with the development of semiconductor manufacturing process technology, the miniaturization and high integration of semiconductor elements are required, and the technology of realizing ultra-fine patterns with line widths below tens of nanometers is required. The progress of the technology for forming such ultra-fine patterns depends on light sources with smaller wavelengths, the development of process technology based on light sources, and the development of photoresists suitable for light sources.

[0003] Photoresist is used in the photolithography process for forming various patterns. Photoresist refers to a photosensitive resin that can change its solubility in a developer under the action of light, thereby obtaining an image corresponding to the exposure pattern.

[0004] The photoresist pattern forming method includes negative tone development (NTD) using a negative tone developer and positive tone development (PTD) using a positive tone developer.

[0005] The pattern forming method using the negative tone developer is a method of forming a pattern by selectively dissolving and removing the non-exposed area using the negative tone developer, while the pattern forming method using the positive tone developer is a method of forming a pattern by selectively dissolving and removing the exposed area using the positive tone developer.

[0006] Compared with the pattern forming method using a positive tone developer, the pattern forming method using the negative tone developer can also realize an inverted pattern in a contact hole pattern or a groove pattern that is difficult to form due to insufficient exposure, thereby making it easy to form a pattern when realizing the same pattern, and an organic solvent is used as a developer for removing the unexposed portion, so that a photoresist pattern can be formed more efficiently.

[0007] On the other hand, generally, the photolithography process using the photoresist composition includes: a process of coating the photoresist on a wafer; a soft baking process of heating the coated photoresist to evaporate the solvent; a process of imaging with the help of a light source passing through a photomask; a process of forming a pattern using a developer according to the solubility difference between the exposed part and the non-exposed part; and a process of etching it to complete the circuit.

[0008] The photoresist composition is composed of a photosensitive agent (Photo A cidGenerator) that generates acid by irradiation with an excimer laser, a base resin and other additives. In the base resin, a polystyrene polymer is basically used as a structure containing a hydroxyl group in a phenol structure. As a photosensitive agent, any photosensitive agent that can generate acid (H + ), all of which are acceptable, and mainly used are sulfonium salts, sulfonyldiazo salts, benzosulfonyl salts, iodine salts, chlorine salts, carboxylic acids, and the like.

[0009] In addition, it is known that the light source mainly used in the above-mentioned process is i-line, KrF excimer laser, ArF excimer laser light source with a wavelength range of 365nm to 193nm, and the shorter the wavelength, the finer the pattern can be formed.

[0010] Among them, although the ArF laser (193nm) system was developed afterwards, the KrF laser (248nm) photoresist has also been pursuing the research and development of light micro-processing. As its reason, the following reason can be cited, that is, although the development of the second generation ArF photoresist still exists unsatisfactory aspects, if the KrF photoresist is continued to be used, the effect of reducing costs in the mass production of semiconductors is large. Corresponding to the development of this technology, the performance of the KrF photoresist should also be improved. A representative example is cited, and along with the high integration, the thickness of the photoresist is required to be gradually reduced, so it is urgent to develop a photoresist with more enhanced dry etching resistance. In addition, the characteristics also required have high resolution, wide depth of focus (DOF (Depth Of Focus)) margin (Margin), formation of defect-free film, adhesion to substrate, high contrast (Contrast), fast sensitivity, chemical stability, etc.

[0011] As mentioned above, the previous patents on KrF photoresist technology include Korean Patent Publication No. 10-0047038 "Chemically Amplified Positive Photoresist Composition", Korean Patent Publication No. 10-1363842 "Chemically Amplified Positive Photoresist Composition and Resist Pattern Forming Method Using the Same", Korean Patent Publication No. 10-1204915 "Photoresist Polymer, Photoresist Composition Containing the Same and Photoresist Pattern Forming Method Using the Same", Korean Patent Publication No. 1 No. 0-0273108 "Copolymer for photoresist preparation and chemically amplified positive photoresist composition containing the same", Korean Patent Publication No. 10-1655947 "Negative photoresist composition for KrF laser with high resolution and high aspect ratio", Korean Patent Publication No. 10-1977886 "Chemically amplified positive photoresist composition for pattern profile improvement", Korean Patent Publication No. 10-0676801 "Resist material and pattern formation method", etc.

[0012] As described in the above patent, in order to improve resolution and sensitivity, KrF photoresist mainly uses polyhydroxystyrene and polystyrene polymers with good transmittance at wavelengths of 248nm to 365nm as basic polymers.

[0013] This positive photoresist based on polyhydroxystyrene and polystyrene polymer has difficulties in being used in processes based on 248nm to 365nm light sources due to its sloped pattern or footing development, and as the thickness of the photoresist increases, the achievable resolution decreases. Depending on the lack of etching resistance and the type of the underlying film, process problems caused by insufficient adhesion have become important issues. Summary of the invention

[0014] Technical issues to be solved

[0015] The object of the present invention is to provide a chemically amplified positive photoresist composition having excellent pattern sensitivity, resolution and dimensional stability, which not only improves the pattern profile and approaches verticality, but also enhances the etch resistance, thereby ultimately significantly improving the process margin.

[0016] Technical solutions to the problem

[0017] In order to solve the problems mentioned above, the present invention provides a chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance, which is characterized by comprising a hydroxyl-containing phenol polymer resin, wherein the hydroxyl-containing phenol polymer resin is selected from new monomers effective for etch resistance (Etch Resistance) of chemically amplified resists represented by the following Chemical Formulas 1 to 3, and is prepared by copolymerization under conditions containing the monomers.

[0018] [Chemical formula 1]

[0019]

[0020] [Chemical formula 2]

[0021]

[0022] [Chemical formula 3]

[0023]

[0024] In the present invention, the novel monomers and similar structures effective for resist etching resistance represented by the above Chemical Formulas 1 to 3 can be easily purchased from a plurality of domestic and foreign suppliers.

[0025] In the present invention, it is characterized in that one of the compounds represented by the above Chemical Formulas 1 to 3 is selected as a monomer effective for etching resistance, and a hydroxyl-containing phenol polymer resin obtained by copolymerization under conditions containing the monomer is represented by the following Chemical Formula 4, and its weight average molecular weight is 1000 to 400000.

[0026] In the present invention, a chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance is provided, characterized in that the photoresist composition comprises, relative to the total weight of the composition: 5 to 60 wt % of a hydroxyl-containing phenol polymer resin represented by the following chemical formula 4, 0.5 to 20 wt % of a photoacid generator, 0.01 to 5 wt % of a basic compound for preventing acid diffusion, 0.01 to 2 wt % of a surfactant, and the remainder of an organic solvent, wherein the hydroxyl-containing phenol polymer resin is copolymerized by selecting one of the compounds represented by the above chemical formulas 1 to 3 as a monomer effective for etch resistance.

[0027] [Chemical formula 4]

[0028]

[0029] In the above structure, R is selected from the monomers represented by the above Chemical Formulae 1 to 3.

[0030] The hydroxyl-containing phenol polymer resin represented by the above Chemical Formula 4 is characterized in that the copolymerization molar ratio a:b:c is (24.86 to 63.9):(10.14 to 26.1):(65 to 10).

[0031] In the present invention, it is characterized in that the photoacid generator includes sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide acid generators, etc., and can be selected from the types of compounds described below to use a single one or a mixture of two or more. Sulfonium salts are salts of sulfonium salt cations and sulfonates. As sulfonium salt cations, triphenylsulfonium salts, (4-tert-butoxyphenyl)diphenylsulfonium salts, bis(4-tert-butoxyphenyl)phenylsulfonium salts, tris(4-tert-butoxyphenyl)sulfonium salts, (3-tert-butoxyphenyl)diphenylsulfonium salts, bis(3-tert-butoxyphenyl)phenylsulfonium salts, tris(3-tert-butoxyphenyl)sulfonium salts, (3,4-di-tert-butoxyphenyl)diphenylsulfonium salts, bis(3,4-di-tert-butoxyphenyl)phenylsulfonium salts, tris(3,4-di-tert-butoxyphenyl)sulfonium salts, sulfonium salts, diphenyl(4-thiophenoxyphenyl)sulfonium salts, (4-tert-butoxycarbonylmethoxyphenyl)diphenylsulfonium salts, tris(4-tert-butoxycarbonylmethoxyphenyl)sulfonium salts, (4-tert-butoxyphenyl)bis(4-dimethylaminophenyl)sulfonium salts, tris(4-dimethylaminophenyl)sulfonium salts, 2-naphthyldiphenylsulfonium salts, dimethyl 2-naphthylsulfonium salts, 4-hydroxyphenyldimethylsulfonium salts, 4-methoxyphenyldimethylsulfonium salts, trimethylsulfonium salts, 2-oxocyclohexylcyclohexylmethylsulfonium salts, trinaphthylsulfonium salts, tribenzylsulfonium salts As sulfonates, there can be mentioned trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc.; iodonium salts are salts of iodonium cations and sulfonates, and as aryl iodonium cations, there can be mentioned diphenyl iodonium salts, ... (4-tert-butylphenyl)iodonium salt, 4-tert-butoxyphenylphenyliodonium salt, 4-methoxyphenylphenyliodonium salt, etc.; as sulfonates, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc. can be mentioned;Examples of the sulfonyldiazomethane include bis(ethylsulfonyl)diazomethane, bis(1-methylpropylsulfonyl)diazomethane, bis(2-methylpropylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(perfluoroisopropylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylphenylsulfonyl)diazomethane, and bis(1,1-dimethylethylsulfonyl)diazomethane. tert-Butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, tert-Butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, tert-Butyl Bissulfonyldiazomethane and sulfonylcarbonyldiazomethane such as carbonyl-4-methylphenylsulfonyldiazomethane; as N-sulfonyloxyimide type photoacid generator, including one or more selected from the group consisting of succinic acid imide, naphthalene dicarboxylic acid imide, phthalic acid imide, cyclohexyl dicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, 7-oxabicyclo [2.2.1] -5-heptene-2,3-dicarboxylic acid imide and imide skeletons and trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc. ;

[0032] In the present invention, it is characterized in that the alkaline compound for preventing acid diffusion can include primary, secondary, tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds with carboxyl groups, nitrogen-containing compounds with sulfonyl groups, nitrogen-containing compounds with hydroxyl groups, nitrogen-containing compounds with hydroxyphenyl groups, alcoholic nitrogen-containing compounds, amide derivatives, imide derivatives, etc., and a single type or a mixture of two or more types of compounds described below can be selected for use. The primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-pentylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, methyldiamine, ethylenediamine, tetraethylenepentamine, etc.; the secondary aliphatic amines include dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dihexadecylamine, etc. Alkylamine, N,N-dimethylmethanediamine, N,N-dimethylethylenediamine, N,N-dimethyltetraethylenepentamine, etc.; as tertiary aliphatic amines, including trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tri(dodecyl)amine, tri(hexadecyl)amine, N,N,N',N'-tetramethylmethanediamine, N,N,N',N'-tetramethylethylenediamine, N,N,N',N'-tetramethyltetraethylenepentamine;Examples of mixed amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, etc. Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (e.g., aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N,N-dimethyltoluidine, etc.), diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (e.g., pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole , 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (e.g., oxazole, isoxazole, etc.), thiazole derivatives (e.g., thiazole, isothiazole, etc.), imidazole derivatives (e.g., imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazolone derivatives, pyrroline derivatives (e.g., pyrroline, 2-methyl-1-pyrroline, etc.), pyrrolidine derivatives (e.g., pyrrolidine, N-methylpyrrolidine, pyrrolidone, N-methylpyrrolidone, etc.), imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (e.g., pyridine, picoline, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, pyridine, pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoleline derivatives, quinoline derivatives (for example, quinoline, 3-cyanoquinoline, etc.), isoquinoline derivatives, cinnoline derivatives Biological, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives; as nitrogen-containing compounds having a carboxyl group, for example, aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine, etc.) and the like are included;Examples of nitrogen-containing compounds having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, and the like; examples of nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indolemethanol hydrate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4-(2-hydroxyethyl)-1-ol, and the like.

[0013] Amide derivatives include 1-(2-hydroxyethyl)morpholine, 2-(2-hydroxyethyl)pyridine, 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine, piperidineethanol, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)-2-pyrrolidone, 3-piperidinyl-1,2-propanediol, 3-pyrrolidine-1,2-propanediol, 8-hydroxypyrrolidine, 3-quinuclidinol, 3-tropineol, 1-methyl-2-pyrrolidineethanol, 1-hydroxyethylaziridine, N-(2-hydroxyethyl)phthalimide, N-(2-hydroxyethyl)isonicotinamide, etc. Amide derivatives include formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, propionamide, benzamide, etc. The imide derivatives include at least one selected from the group consisting of phthalimide, succinimide and maleimide. ;

[0033] In a preferred embodiment of the present invention, it is characterized in that the surfactant can include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene octadecyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, etc.; polyoxyethylene alkyl allyl ethers such as polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, etc.; polyoxyethylene polyoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, etc.; nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, etc.; EFTOP EF301, EF303, EF352 (manufactured by TOKEMPTODUCTS Co., Ltd.), MEGAFAC Fluorine-based surfactants such as F171, F172, and F173 (manufactured by Dainippon Ink & Chemicals Co., Ltd.), Fluor ad FC430 and FC431 (manufactured by Sumitomo 3M Co., Ltd.), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol E1004, KH-10, KH-20, KH-30, and KH-40 (manufactured by Asahi Glass Co., Ltd.); organosiloxane polymers KP341, X-70-092, and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.), and acrylic or methacrylic Poly-Flow No. 75 and No. 95 (manufactured by Kyoeisha Oil & Fat Chemical Industry Co., Ltd.), including those selected from FC430, Surflon One or more selected from the group consisting of S-381, Surfynol E1004, KH-20, and KH-30.

[0034] Effects of the Invention

[0035] The effect of the present invention is to provide a chemically amplified positive photoresist composition, which has excellent pattern sensitivity, resolution and dimensional stability. Not only is the pattern profile improved and close to vertical, but the etching resistance is also enhanced, thereby ultimately significantly improving the process margin. DETAILED DESCRIPTION

[0036] Best Mode for Carrying Out the Invention

[0037] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as those commonly understood by those of ordinary skill in the art to which the invention belongs. Generally, the nomenclature used in this specification is well known and commonly used in the art.

[0038] Throughout the present specification, when a certain part is referred to as “comprising” a certain constituent element, this means that other constituent elements are not excluded and other constituent elements may be included unless otherwise specifically stated.

[0039] The "new monomer effective for etch resistance" proposed in the present invention refers to a monomer structure that can improve the etch resistance in the etching process carried out in the subsequent process after the PEB (Post Exposed Bake) or HB (Hard Bake) process carried out after exposure to a 248nm to 365nm light source.

[0040] In the present invention, the so-called "photoresist" refers to a mixture of a polymer and a photosensitizer, whose chemical properties change due to light. Therefore, when exposed to light of a certain wavelength, the solubility in a specific solvent changes, resulting in a difference in the dissolution rate of the exposed part and the non-exposed part of the solvent. When the dissolution time of a specified period of time has passed, the incompletely dissolved part remains to form a pattern.

[0041] In the present invention, "photolithographic process" refers to using the properties of the photoresist as described above to place a mask engraved with a semiconductor design drawing between a light source and a photoresist film coated on a silicon wafer. When the light source is turned on, the circuit engraved on the mask will be transferred to the photoresist as it is.

[0042] In the present invention, "KrF" refers to a light source having a wavelength of 248 nm, and "i-Line" refers to a light source having a wavelength of 365 nm.

[0043] One embodiment of the present invention provides a chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance, which is characterized by comprising a hydroxyl-containing phenol polymer resin, wherein the hydroxyl-containing phenol polymer resin is selected from new monomers effective for etch resistance of chemically amplified resists represented by the following Chemical Formulas 1 to 3, and is prepared by copolymerization under conditions containing the monomers.

[0044] [Chemical formula 1]

[0045]

[0046] [Chemical formula 2]

[0047]

[0048] [Chemical formula 3]

[0049]

[0050] In a preferred embodiment of the present invention, one of the compounds represented by the above Chemical Formulas 1 to 3 is selected as a monomer effective for etching resistance, and a hydroxyl-containing phenol polymer resin obtained by copolymerization under conditions containing the monomer is represented by the following Chemical Formula 4.

[0051] [Chemical formula 4]

[0052]

[0053] In the above structure, R is selected from the monomers represented by the above Chemical Formulae 1 to 3.

[0054] In a preferred embodiment of the present invention, the hydroxyl-containing phenol polymer resin represented by the above Chemical Formula 4 is characterized in that the copolymerization molar ratio a:b:c is (24.86 to 63.9):(10.14 to 26.1):(65 to 10).

[0055] In a preferred embodiment of the present invention, a chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance is provided, characterized in that, relative to the total weight of the composition, the photoresist composition comprises: 5 to 60 wt % of a hydroxyl-containing phenol polymer resin, 0.5 to 20 wt % of a photoacid generator, 0.01 to 5 wt % of a basic compound for preventing acid diffusion, 0.01 to 2 wt % of a surfactant, and the remainder of an organic solvent, wherein the hydroxyl-containing phenol polymer resin is represented by the following chemical formula 4, which is selected from one of the compounds represented by the above chemical formulas 1 to 3 as a monomer effective for etch resistance and copolymerized.

[0056] In a preferred embodiment of the present invention, preferably, the weight average molecular weight of the hydroxyl-containing phenol polymer resin represented by the above Chemical Formula 4, which includes the new monomers represented by the above Chemical Formulas 1 to 3 that are effective for etching resistance, is 1000 to 400000. If, when the weight average molecular weight of the above polymer resin is less than 1000, not only is there no etching resistance (Etch Resistance) effect of the photoresist, but also a vertical profile cannot be formed at the same time. In addition, when the weight average molecular weight of the polymer resin is greater than 400000, even if it is effective for etching resistance (Etch Resistance), after patterning, the process margin is reduced due to the frequent occurrence of residue defects (Defact), etc., so it is not preferred.

[0057] In a preferred embodiment of the present invention, preferably, the polymer resin comprises 5 to 60 wt % of the polymer resin relative to the total weight of the composition. If the polymer resin is used in an amount less than 5 wt %, problems such as poor profile, scum, and poor etching resistance may occur, and if the polymer resin is used in an amount exceeding 60 wt %, problems such as poor patterning may occur due to insufficient development.

[0058] In a preferred embodiment of the present invention, the photoacid generator includes a sulfonium salt, an iodonium salt, a sulfonyldiazomethane, an N-sulfonyloxyimide acid generator, and the like, and can use one or a mixture of two or more of the following compounds. The sulfonium salt is a salt of a sulfonium cation and a sulfonate, and examples of the sulfonium cation include triphenylsulfonium salt, (4-tert-butoxyphenyl)diphenylsulfonium salt, bis(4-tert-butoxyphenyl)phenylsulfonium salt, tri(4-tert-butoxyphenyl)sulfonium salt, (3-tert-butoxyphenyl)diphenylsulfonium salt, bis(3-tert-butoxyphenyl)phenylsulfonium salt, tri(3-tert-butoxyphenyl)sulfonium salt, (3,4-di-tert-butoxyphenyl)diphenylsulfonium salt, bis(3,4-di-tert-butoxyphenyl)phenylsulfonium salt, tri(3,4-di-tert-butoxyphenyl) Sulfonium salts, diphenyl(4-thiophenoxyphenyl)sulfonium salts, (4-tert-butoxycarbonylmethoxyphenyl)diphenylsulfonium salts, tris(4-tert-butoxycarbonylmethoxyphenyl)sulfonium salts, (4-tert-butoxyphenyl)bis(4-dimethylaminophenyl)sulfonium salts, tris(4-dimethylaminophenyl)sulfonium salts, 2-naphthyldiphenylsulfonium salts, dimethyl 2-naphthylsulfonium salts, 4-hydroxyphenyldimethylsulfonium salts, 4-methoxyphenyldimethylsulfonium salts, trimethylsulfonium salts, 2-oxocyclohexylcyclohexylmethylsulfonium salts, trinaphthylsulfonium salts, tribenzylsulfonium salts etc.; as sulfonates, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc. can be mentioned; iodonium salt is a salt of iodonium cation and sulfonate, and as aryl iodonium cation, diphenyl iodonium salt, diphenyl iodonium salt can be mentioned. (4-tert-butylphenyl)iodonium salt, 4-tert-butoxyphenylphenyliodonium salt, 4-methoxyphenylphenyliodonium salt, etc.; as sulfonates, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc. can be mentioned;Examples of the sulfonyldiazomethane include bis(ethylsulfonyl)diazomethane, bis(1-methylpropylsulfonyl)diazomethane, bis(2-methylpropylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(perfluoroisopropylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylphenylsulfonyl)diazomethane, and bis(1,1-dimethylethylsulfonyl)diazomethane. tert-Butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, tert-Butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, tert-Butyl Bissulfonyldiazomethane and sulfonylcarbonyldiazomethane such as carbonyl-4-methylphenylsulfonyldiazomethane; as N-sulfonyloxyimide type photoacid generator, including one or more selected from the group consisting of succinic acid imide, naphthalene dicarboxylic acid imide, phthalic acid imide, cyclohexyl dicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, 7-oxabicyclo [2.2.1] -5-heptene-2,3-dicarboxylic acid imide and imide skeletons and trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc. ;

[0059] Preferably, the photoacid generator comprises 0.5 to 20 wt % relative to the total weight of the composition. If the photoacid generator is used in an amount less than 0.05 wt %, the pattern tilt angle may be less than 90° due to insufficient acid generated, and when the amount exceeds 20 wt %, the photoacid generator absorbs light from the exposure source and reduces transmittance, resulting in poor pattern definition and the like.

[0060] In a preferred embodiment of the present invention, the alkaline compound that prevents acid diffusion includes, for example, primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds with carboxyl groups, nitrogen-containing compounds with sulfonyl groups, nitrogen-containing compounds with hydroxyl groups, nitrogen-containing compounds with hydroxyphenyl groups, alcoholic nitrogen-containing compounds, amide derivatives, imide derivatives, etc., and one of the types of compounds described below can be selected alone or two or more can be mixed and used. The primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-pentylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc.; the secondary aliphatic amines include dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dihexadecylamine, N,N-dimethylmethanediamine, N,N-dimethyl tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tri(dodecyl)amine, tri(hexadecyl)amine, N,N,N',N'-tetramethylmethanediamine, N,N,N',N'-tetramethylethylenediamine, N,N,N',N'-tetramethyltetraethylenepentamine; mixed amines include, for example, dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, etc.;Specific examples of the aromatic amines and heterocyclic amines include aniline derivatives (e.g., aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N,N-dimethyltoluidine, etc.), diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (e.g., pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, etc.),

[0063] The invention also includes oxazole derivatives (e.g., oxazole, isoxazole, etc.), thiazole derivatives (e.g., thiazole, isothiazole, etc.), imidazole derivatives (e.g., imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazol derivatives, pyrroline derivatives (e.g., pyrroline, 2-methyl-1-pyrroline, etc.), pyrrolidine derivatives (e.g., pyrrolidine, N-methylpyrrolidine, pyrrolidone, N-methylpyrrolidone, etc.), imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (e.g., pyridine, picoline, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3- methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridine, 4-pyrrolidinylpyridine, 1-methyl-4-phenylpyridine, 2-(1-ethylpropyl)pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoleline derivatives, quinoline derivatives (for example, quinoline, 3-cyanoquinoline, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine Derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives; as nitrogen-containing compounds having a carboxyl group, for example, aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine, etc.), etc.; as nitrogen-containing compounds having a sulfonyl group, for example, 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, etc. are included;Examples of nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indolemethanol hydrate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4-(2-hydroxyethyl)morpholine, and 2-(2-hydroxyethyl)pyridine , 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine, piperidineethanol, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)-2-pyrrolidone, 3-piperidinyl-1,2-propanediol, 3-pyrrolidine-1,2-propanediol, 8-hydroxypyrrolidine, 3-quinuclidinol, 3-tropineol, 1-methyl-2-pyrrolidineethanol, 1-hydroxyethylaziridine, N-(2-hydroxyethyl)phthalimide, N-(2-hydroxyethyl)isonicotinamide, etc. Amide derivatives include formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, propionamide and benzamide, etc. Imide derivatives include at least one selected from the group consisting of phthalimide, succinimide and maleimide. ;

[0061] Preferably, the acid diffusion preventing alkaline compound comprises 0.01 to 5 wt % relative to the total weight of the composition. If the acid diffusion preventing alkaline compound is used in an amount less than 0.01 wt %, pattern defects such as pattern defects (line width roughness (LWR), line edge roughness (LER)) at the wall or corner of the pattern may occur due to the generation of excessive acid, and when it is greater than 5 wt %, the problem of being unable to form a pattern may occur.

[0062] In a preferred embodiment of the present invention, the surfactant can include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene octadecyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, etc.; polyoxyethylene alkyl allyl ethers such as polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, etc.; polyoxyethylene polyoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, etc.; nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, etc.; EFTOP EF 301, EF303, EF352 (manufactured by TOKEM PTODUCTS Co., Ltd.), MEGAFAC Fluorine-based surfactants such as F171, F172, and F173 (manufactured by Dainippon Ink & Chemicals Co., Ltd.), Fluorad FC430 and FC431 (manufactured by Sumitomo 3M Co., Ltd.), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol E1004, KH-10, KH-20, KH-30, and KH-40 (manufactured by Asahi Glass Co., Ltd.); organosiloxane polymers KP341, X-70-092, and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.), and acrylic or methacrylic Poly-Flow No. 75 and No. 95 (manufactured by Kyoeisha Oil & Fat Chemical Industry Co., Ltd.), including those selected from FC430, Surflon One or more selected from the group consisting of S-381, Surfynol E1004, KH-20, and KH-30.

[0063] In a preferred embodiment of the present invention, butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, cyclopentanone, 3-ethoxyethyl propionate, 3-ethoxymethyl propionate, 3-methoxymethyl propionate, methyl acetate, ethyl acetate, diacetone alcohol, methyl pyruvate, ethyl pyruvate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-methoxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, tetramethylene sulfone, etc. can be used as the solvent, and they can be used alone or in combination.

[0064] On the other hand, in a preferred embodiment of the present invention, compared with the existing KrF positive photoresist, the thickness of the chemically amplified positive photoresist composition for improving the profile and process margin by introducing an appropriate amount of a novel monomer effective for etch resistance and having an optimal copolymerization molar ratio range can be increased according to the type and amount of the solvent used. to to use.

[0065] As described above, compared with the existing KrF positive photoresist, the chemically amplified positive photoresist composition provided by the present invention has an optimal copolymerization molar ratio range for improving profile and process margin by introducing an appropriate amount of new monomers effective for etch resistance (Etch Resistance). By adding new monomers effective for etch resistance (Etch Resistance) represented by Chemical Formulas 1 to 3, a vertical profile according to exposure energy can be obtained, and it is effective for improving etch resistance (Etch Resistance), thereby providing a process margin compared with the existing KrF photoresist.

[0066] Specific ways to implement the invention

[0067] [Example]

[0068] Below, the present invention is described in more detail by examples. These examples are only used to illustrate the present invention and cannot be interpreted as limiting the scope of the present invention based on these examples, which is obvious to those of ordinary skill in the art to which the present invention belongs. A KrF excimer laser positive photoresist composition was prepared using a phenol polymer resin (in chemical formula 4, R is chemical formula 1, and the combination of a, b, c and other photoresist composition components that determine the copolymerization molar ratio is shown in Table 1 below) with a weight average molecular weight of 16100 as a base resin. The composition prepared above was coated on a silicon wafer using a spin coater, and after soft baking at 100°C for 90 seconds, a target thickness of 0.4 μm was confirmed. The exposure process was completed under a 248nm excimer laser scanner, followed by a baking process (PEB) of 90 seconds at 110°C, and then a process using 2.38% tetramethylammonium hydroxide development was performed to form a pattern.

[0069] Furthermore, in order to evaluate the etching characteristics of the wafers obtained in the following Examples 1 to 12, the etching resistance was evaluated using inductively coupled plasma reactive ion etching (ICP-RIE: Inductively Coupled Plasma Reactive Ion Etching).

[0070] The remaining components other than the base resin are as follows.

[0071] PAG1: 10-Camphorsulfonic acid (4-butoxyphenyl) diphenylsulfonium salt

[0072] PAG2: 4-(4'-methylphenylsulfonyloxy)benzenesulfonic acid (4-tert-butylphenyl) diphenylsulfonium salt

[0073] Basic compounds that prevent acid diffusion: tris(2-methoxyethyl)amine

[0074] Surfactant A: FC-430

[0075] Surfactant B: Surflon S-38

[0076] Solvent A: Propylene glycol methyl ether acetate

[0077] Solvent B: Ethyl lactate

[0078] [Table 1]

[0079]

[0080] (The copolymerization ratio (a:b:c) keeps the ratio of monomer a to monomer b in the polymer resin fixed at about 2.45, and is configured such that from Example 1 to Example 12, the ratio of the sum of the ratio of monomer a and the ratio of monomer b gradually decreases, while the ratio of monomer c gradually increases)

[0081] Characteristic determination

[0082] The properties of the chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance (Etch Resistance) prepared as shown in the above Examples 1 to 12 and Comparative Example 1 were measured, wherein the composition includes a phenol polymer resin, and the phenol polymer resin includes a new monomer that has an effect on pattern profile and etch resistance.

[0083] Sensitivity, resolution, and profile were measured using a critical dimension scanning electron microscope (CD-SEM) that can observe the line width (critical dimension) of the pattern, and the minimum line width (resolution) was observed and confirmed based on L / S (Line / Space). In addition, for sensitivity, the energy (Energy) that can determine the minimum line width (resolution) was measured as sensitivity.

[0084] The exposure amount at which the top and bottom of a line and space of 0.15 μm in size are defined as 1:1 is taken as the optimal exposure amount (sensitivity: Eop). Based on this exposure amount, the minimum line width of the separated lines and spaces is used as the resolution of the photoresist for evaluation. The shape of the photoresist pattern is observed by observing the resist cross-section using a scanning electron microscope.

[0085] The PED stability of the resist is evaluated by the degree of variation of the line width after exposure at the optimal exposure dose and PEB (post exposure bake) is performed after 24 hours of exposure. It can be said that the smaller the degree of variation, the better the PED stability.

[0086] The results of the above measurements are shown in Table 2 below.

[0087] [Table 2]

[0088]

[0089]

[0090] (*: Relative evaluation was performed by normalizing the etching resistance of Comparative Example 1 to 1) From the above Table 1, it can be confirmed that the etching resistance of Examples 1 to 12 is gradually improved compared with Comparative Example 1 according to the evaluation results of the increase in the ratio of the new monomer effective for etching resistance contained in the base resin, and it can be confirmed that the PED stability after 24 hours is also improved. In addition, it can be confirmed that the vertical pattern profile is also improved compared with the result of Comparative Example 1, and the best result can be determined when the copolymerization molar ratio of the new monomer effective for etching resistance is 15 to 25. When the copolymerization molar ratio of the new monomer effective for etching resistance is less than 15, it can be confirmed that the pattern profile shape is an abnormal negative slope (Nega-Slope), and when the copolymerization molar ratio of the new monomer is greater than 30, it can be confirmed that it is effective for etching resistance and PED stability after 24 hours, but has no effect on sensitivity (Sensitivity) and resolution (Resolution).

[0091] As a result, it can be confirmed that when the copolymerization molar ratio of the new monomer effective for etching resistance (Etch Resistance) contained in the above-mentioned Chemical Formulas 1 to 3 is within the range of 15 to 25 as the optimal content, a KrF light source photoresist composition having the best effect on improving etching resistance (Etch Resistance) can be provided, wherein the composition includes a polymer resin, and the polymer resin includes a new monomer effective for etching resistance (Etch Resistance).

[0092] Simple modifications or changes of the present invention can be easily realized by ordinary technicians in the technical field to which the present invention belongs, and it can be considered that such modifications or changes are included in the scope of the present invention.

Claims

1. A chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance, which is a photoresist composition capable of being exposed with a light source having a wavelength of 248 nm, characterized in that: The phenol polymer resin containing hydroxyl group is represented by the following chemical formula 4, wherein the phenol polymer resin containing hydroxyl group is copolymerized by selecting one of the compounds represented by the following chemical formulas 1 to 3 as a monomer effective for etching resistance, [Chemical formula 1] [Chemical formula 2] [Chemical formula 3] [Chemical formula 4] In the above structure, R is selected from the monomers represented by the above Chemical Formulae 1 to 3.

2. The chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance according to claim 1, characterized in that: Relative to the total weight of the composition, the photoresist composition includes: 5 to 60 wt % of a polymer resin, 0.5 to 20 wt % of a photoacid generator, 0.01 to 5 wt % of a basic compound for preventing acid diffusion, 0.01 to 2 wt % of a surfactant, and the balance an organic solvent.

3. The chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance according to claim 2, characterized in that: The polymer resin is a phenol polymer resin containing a hydroxyl group represented by the above Chemical Formula 4, and a copolymerization molar ratio of a:b:c is (24.86 to 63.9):(10.14 to 26.1):(65 to 10).

4. The chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance according to claim 2, characterized in that: The photoacid generator is one or more selected from the group consisting of triphenylsulfonium salt, (4-tert-butoxyphenyl)diphenylsulfonium salt, bis(4-tert-butoxyphenyl)phenylsulfonium salt, tri(4-tert-butoxyphenyl)sulfonium salt, (3-tert-butoxyphenyl)diphenylsulfonium salt, bis(3-tert-butoxyphenyl)phenylsulfonium salt, tri(3-tert-butoxyphenyl)sulfonium salt, (3,4-di-tert-butoxyphenyl)diphenylsulfonium salt, bis(3,4-di-tert-butoxyphenyl)phenylsulfonium salt, tri(3,4-di-tert-butoxyphenyl)sulfonium salt, diphenyl(4-thiophenoxyphenyl)sulfonium salt, (4-tert-butoxycarbonylmethoxyphenyl)diphenylsulfonium salt, tri(4-tert-butoxycarbonylmethoxyphenyl)sulfonium salt, (4-tert-butoxyphenyl) )bis(4-dimethylaminophenyl)sulfonium salt, tris(4-dimethylaminophenyl)sulfonium salt, 2-naphthyldiphenylsulfonium salt, dimethyl 2-naphthylsulfonium salt, 4-hydroxyphenyldimethylsulfonium salt, 4-methoxyphenyldimethylsulfonium salt, trimethylsulfonium salt, 2-oxocyclohexylcyclohexylmethylsulfonium salt, trinaphthylsulfonium salt, tribenzylsulfonium salt, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, diphenyliodonium salt, bis(4-tert-butylbenzenesulfonate) 1-(4-(4-toluenesulfonyloxy)benzenesulfonate, 1-(4-methyl)-1-(2 ... sulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylphenylsulfonyl)diazomethane, bis(2,4-dimethylphenylsulfonyl)diazomethane, bis(2-naphthylsulfonyl)diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, tert-butyloxycarbonyl-4-methylphenylsulfonyldiazomethane, succinic acid imide, naphthalene dicarboxylic acid imide, phthalic acid imide, cyclohexyl dicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, 7-oxabicyclo[2.2.1]-5-heptene-2,3-dicarboxylic acid imide, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate, etc.

5. The chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance according to claim 2, characterized in that: The alkaline compound for preventing acid diffusion is one or more selected from the group consisting of ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-pentylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine Amine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dihexadecylamine, N,N-dimethylmethanediamine, N,N-dimethylethylenediamine, N,N-dimethyltetraethylenepentamine, trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine amine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, trihexadecylamine, N,N,N',N'-tetramethylmethanediamine, N,N,N',N'-tetramethylethylenediamine, N,N,N',N'-tetramethyltetraethylenepentamine, dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methyl Aniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N,N-dimethyltoluidine, diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, oxazole, isoxazole, thiazole, isothiazole, imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, pyrazole derivatives, furazol derivatives, pyrroline, 2-methyl-1-pyrroline, pyrrolidine, N-methylpyrrolidine, pyrrolidone, N-methylpyrrolidone, imidazoline derivatives, imidazolidinyl derivatives, pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, lutidine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridine, 4-pyrrolidinylpyridine , 1-methyl-4-phenylpyridine, 2-(1-ethylpropyl)pyridine, aminopyridine, dimethylaminopyridine, pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoleline derivatives, quinoline, 3-cyanoquinoline, isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives aminobenzoic acid, indolecarboxylic acid, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine, 3-pyridinesulfonic acid, pyridine p-toluenesulfonate, 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indolemethanol hydrate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4-(2-hydroxyethyl)morpholine, 2-(2-hydroxyethyl)pyridine, 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine, piperidineethanol, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)-2-pyrrolidone, 3-piperidinyl-1,2-propanediol, 3-pyrrolidine-1,2-propanediol, 8-hydroxypyrrolidine, 3-quinuclidinol, 3-tropineol, 1-methyl-2-pyrrolidineethanol, 1-hydroxyethylaziridine, N-(2-hydroxyethyl)phthalimide, N-(2-hydroxyethyl)isonicotinamide, formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, propionamide, benzamide, phthalimide, succinimide, and maleimide, etc.

6. The chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance according to claim 2, characterized in that: The surfactant is one or more selected from the group consisting of polyoxyethylene lauryl ether, polyoxyethylene octadecyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, Eftop EF301, EF303, EF352, Megafac F171, F172, F173, Fluorad FC430, FC431, AsahiGuard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol E1004, KH-10, KH-20, KH-30, KH-40, organosilicone polymer KP 341, X-70-092, X-70-093, and acrylic or methacrylic Poly-Flow No.75 and No.95, etc.

7. The chemically amplified positive photoresist composition for improving pattern profile and enhancing etching resistance according to claim 2, characterized in that: The organic solvent is one or more selected from the group consisting of butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, cyclopentanone, 3-ethoxyethyl propionate, 3-ethoxymethyl propionate, 3-methoxymethyl propionate, methyl acetate, ethyl acetate, diacetone alcohol, methyl pyruvate, ethyl pyruvate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-methoxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, and tetramethylene sulfone.

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