Cassette structures for batch processing of epitaxial deposition operations and related methods

Abstract

The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. In one implementation, a cartridge configured for placement in a substrate processing chamber includes a first wall, a second wall spaced apart from the first wall, and one or more sidewalls extending between and coupled to the first wall and the second wall. The cartridge includes one or more inlet openings formed in the one or more sidewalls, and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cartridge includes a plurality of levels including a plurality of substrate supports mounted to the one or more sidewalls and spaced apart from each other along the one or more sidewalls.

Description

Technical Field

[0001] The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. Background Art

[0002] Semiconductor substrates are processed for a variety of applications, including the manufacture of integrated devices and microdevices. However, operations (such as epitaxial deposition operations) may be time-consuming, costly, and inefficient, and may have limited capacity and output. Operations may also be limited in terms of film growth rate. In addition, the hardware may involve relatively large sizes, which occupy a large floor space in the manufacturing facility. In addition, the operation may involve obstacles in temperature control, gas control, and / or substrate center-to-edge control and adjustability. This obstacle is exacerbated in relatively complex processing operations and / or operations requiring single-sided deposition.

[0003] Therefore, a need exists for improved apparatus and methods in semiconductor processing. Summary of the invention

[0004] The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations.

[0005] In one implementation, a box configured for placement in a substrate processing chamber includes a first wall, a second wall spaced apart from the first wall, and one or more side walls extending between and coupled to the first wall and the second wall. The box includes one or more inlet openings formed in the one or more side walls, and one or more outlet openings formed in the one or more side walls opposite the one or more inlet openings. The box includes a plurality of levels including a plurality of substrate supports mounted to the one or more side walls and spaced apart from each other along the one or more side walls.

[0006] In one implementation, a device for substrate processing includes a chamber body, which includes a processing space, a plurality of gas injection channels formed in the chamber body and positioned as a plurality of injection levels, and one or more exhaust channels formed in the chamber body opposite to the plurality of gas injection channels. The device includes one or more heat sources configured to generate heat, a base assembly positioned in the processing space, and a box positioned in the processing space and at least partially supported by the base assembly. The box includes a first wall, a second wall spaced apart from the first wall, and one or more side walls extending between the first wall and the second wall. The box includes a plurality of inlet openings formed in one or more side walls and positioned as a plurality of flow levels, and each flow level of the plurality of flow levels is aligned with and fluidically connected to a corresponding injection level in the plurality of injection levels. The box includes one or more outlet openings formed in one or more side walls opposite to the plurality of inlet openings and a plurality of substrate supports mounted to the one or more side walls.

[0007] In one implementation, a method of processing multiple substrates includes: positioning a first substrate in a processing space of a chamber and positioning a second substrate in the processing space at a substrate spacing from the first substrate. The method includes: positioning a third substrate on the second substrate so that an outer surface of the third substrate contacts an outer surface of the second substrate. The method includes: flowing one or more processing gases into the processing space; and heating the first substrate, the second substrate, and the third substrate. The method includes: depositing one or more layers simultaneously on each of the first substrate, the second substrate, and the third substrate while the third substrate contacts the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to be able to understand in detail the manner of the above-mentioned features of the present disclosure, a more specific description of the present disclosure briefly summarized above can be obtained by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and therefore should not be considered as limiting the scope, because the present disclosure may admit other equivalent embodiments.

[0009] Figure 1A is a schematic cross-sectional side view of a processing device according to one implementation.

[0010] Figure 1B According to an implementation Figure 1A Schematic cross-sectional side view of the processing device shown in .

[0011] Figure 2 According to an implementation Figure 1A and Figure 1B Schematic side cross-sectional view of the box shown in .

[0012] Figure 3 According to an implementation Figure 2 Schematic side cross-sectional view of the box shown in during a deposition operation.

[0013] Figure 4 According to an implementation Figure 2 and Figure 3 Schematic top cross-sectional view of the box shown in .

[0014] Figure 5 According to an implementation Figures 2 to 4 Schematic partial side view of the box shown in .

[0015] Figure 6 According to an implementation Figure 2 and Figure 3 Schematic top cross-sectional view of the box shown in .

[0016] Figure 7According to an implementation Figure 6 Schematic partial perspective view of the box shown in .

[0017] Figure 8 According to an implementation Figure 2 and Figure 3 Schematic top cross-sectional view of the box shown in .

[0018] Fig. 9 According to an implementation Figure 2 Schematic enlargement of the box shown.

[0019] Fig.10 According to an implementation Figure 2 Schematic enlargement of the box shown in .

[0020] Fig.11 According to an implementation Figure 2 and Figure 3 Schematic top cross-sectional view of the box shown in .

[0021] Fig.12 is a schematic diagram of a method for processing multiple substrates.

[0022] Fig.13 According to an implementation Figure 1A and Figure 1B Schematic side cross-sectional view of the box shown in .

[0023] Fig.14 According to an implementation Fig.13 Schematic side cross-sectional view of the box shown in during a deposition operation.

[0024] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0025] The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations.

[0026] The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, welding, fusing, melting together, interference fitting, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integrally formed. The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as chains.

[0027] Figure 1A is a schematic cross-sectional side view of a processing device 100 according to one implementation. For purposes of visual clarity, Figure 1B The side heat sources 118a, 118b shown in FIG. Figure 1A The processing apparatus 100 includes a processing chamber having a chamber body 130 that defines a processing space 124 .

[0028] The cassette 230 is positioned in the processing volume 124 and is at least partially supported by the pedestal assembly 119. The cassette 230 supports a plurality of substrates 255 for simultaneous processing (eg, epitaxial deposition). Figure 1A In the illustrated implementation, the cassette 230 supports eight substrates. The cassette 230 may support other numbers of substrates, including but not limited to two substrates 255, three substrates 255, six substrates 255, or twelve substrates 255.

[0029] The processing apparatus 100 includes an upper window 116, such as a dome, disposed between the cover 104 and the processing space 124. The processing apparatus 100 includes a lower window 115 disposed below the processing space 124. One or more upper heat sources 106 are located above the processing space 124 and the upper window 116. The one or more upper heat sources 106 may be radiant heat sources, such as lamps, for example, halogen lamps. The one or more upper heat sources 106 are disposed between the upper window 116 and the cover 104. The upper heat sources 106 are positioned to provide uniform heating of the substrate 255. One or more lower heat sources 138 are positioned below the processing space 124 and the lower window 115. One or more lower radiant heat sources 138 may be radiant heat sources, such as lamps, for example, halogen lamps. The lower heat source 138 is disposed between the lower window 115 and the chamber body bottom 134. The lower heat source 138 is positioned to provide uniform heating of the substrate 255.

[0030] The present disclosure contemplates that other heat sources (in addition to or in place of lamps) can be used for the various heat sources described herein. For example, resistive heaters, light emitting diodes (LEDs), and / or lasers can be used for the various heat sources described herein.

[0031] The upper and lower windows 116, 115 may be transparent to infrared radiation, such as by transmitting at least 95% of the infrared radiation. The upper window 116 and the lower window 115 may be a quartz material (such as transparent quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window that partially defines the processing space 124. The outer window support 194 supports the inner window 193 and is at least partially disposed in the support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window that partially defines the processing space 124. The outer window support 188 supports the inner window 187.

[0032] The processing apparatus 100 includes a base assembly 119 disposed in a processing space 124. One or more liners 120 are disposed in the processing space 124 and surround the base assembly 119. The one or more liners 120 help shield a chamber body 130 from chemical effects in the processing space 124. The chamber body 130 is at least partially disposed between the upper window 116 and the lower window 115. The one or more liners 120 are disposed between the processing space 124 and the chamber body 130.

[0033] The processing apparatus 100 includes a plurality of gas injection channels 182 formed in the chamber body 130 and in fluid communication with the processing space 124, and one or more gas exhaust channels 172 (in the chamber body 130) formed opposite to the plurality of gas injection channels 182. Figure 1A One or more gas exhaust passages 172 are in fluid communication with the processing space 124. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 are formed through one or more sidewalls of the chamber body 130 and through one or more liners 120 lining the one or more sidewalls of the chamber body 130.

[0034] Each gas injection channel 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 formed in one or more liners 120 (in the Figure 1A One or more supply conduit systems are in fluid communication with the gas injection channel 182. Figure 1A, an internal supply conduit system 121 and an external supply conduit system 122 are in fluid communication with a gas injection channel 182. The internal supply conduit system 121 includes a plurality of internal gas boxes 123 mounted to the chamber body 130 and in fluid communication with a set of internal gas injection channels 182. The external supply conduit system 122 includes a plurality of external gas boxes 117 mounted to the chamber body 130 and in fluid communication with a set of external gas injection channels 182.

[0035] The processing device 100 includes a flow guiding structure 150 positioned in the processing space 124. The flow guiding structure 150 includes one or more first flow dividers 151 ( Figure 1A ), which divides the processing space into multiple flow levels 153 ( Figure 1A 150 includes one or more second flow dividers 152 oriented to intersect with one or more first flow dividers 151 and divide each of the plurality of flow levels 153 into a plurality of flow segments 154 (in Figure 1A Two flow segments 154 are shown for each flow level 153. Figure 1A In the illustrated implementation, the first flow dividers 151 each include a ring, and the one or more second flow dividers 152 each include a cylindrical sleeve surrounding an innermost flow segment 154 of the flow segments 154. The one or more first flow dividers 151 are coupled to the one or more liners 120.

[0036] The plurality of gas injection channels 182 are positioned as a plurality of injection levels, so that each gas injection channel 182 corresponds to one of the plurality of injection levels. Each injection level is aligned with a corresponding flow level 153. The gas injection channel 182 of each injection level leads to the outermost flow section 154 of the corresponding flow level. Figure 1A In the illustrated implementation, two or three of the gas openings 186 are grouped into each flow level, and the gas openings 186 lead to the outermost flow segment 154 of the respective flow level.

[0037] The processing device 100 includes a heat shield structure 1060 located in the processing space 124. The heat shield structure 1060 includes a first shield plate 161 located inside one or more second flow dividers 152, and a second shield plate 1062. The second shield plate 1062 is oriented to intersect with the first shield plate 161 and is at least partially supported by one or more liners 120. The first shield plate 161 can be a cylindrical sleeve.

[0038] Each of the one or more second flow dividers 152 includes a plurality of divider inlet openings 155 and a plurality of divider outlet openings 156 formed therein. The divider outlet openings 156 are opposite to the divider inlet openings 155. Figure 1AAs shown, two or three of the divider inlet openings 155 and two or three of the divider outlet openings 156 are grouped into respective ones of the flow levels 153 .

[0039] The first shield plate 161 includes a plurality of shield inlet openings 165 and a plurality of shield outlet openings 166 formed therein. The shield outlet openings 166 are opposite to the shield inlet openings 165. The plurality of divider inlet openings 155 are offset from the plurality of shield inlet openings 165 in the XY plane.

[0040] Each of the one or more liners 120, the one or more first flow dividers 151, the one or more second flow dividers 152, the first shielding plate 161 and the second shielding plate 1062 is formed of one or more of quartz, silicon carbide (SiC) or graphite coated with SiC).

[0041] The box 230 is positioned inside the first shielding plate 161. The preheating ring 111 is positioned outside the box 230. The preheating ring 111 is coupled to and / or at least partially supported by one or more liners 120. The one or more second flow dividers 152 are coupled to and / or at least partially supported by the preheating ring 111.

[0042] Portions of the flow guiding structure 150, such as the flow divider 151, may serve as a preheat ring for all flow segments 154 of each flow level 153. The preheat ring 111 may be a portion of the flow guiding structure 150, such as integrated with the flow guiding structure 150.

[0043] During operation (such as during epitaxial deposition operation), one or more process gases P1 are supplied to the processing space 124 through the internal supply conduit system 121 and the external supply conduit system 122, and through the plurality of gas injection channels 182. The one or more process gases P1 are supplied by one or more gas sources 196 that are fluidly connected to the plurality of gas injection channels 182. Each of the gas injection channels 182 is configured to direct the one or more process gases P1 toward the box 230 in a generally radially inward direction. Therefore, in one or more embodiments, the gas injection channels 182 may be part of a cross-flow gas injector. The (multiple) flows of the one or more process gases P1 are divided into a plurality of flow levels 153. Dividing the process gas into a plurality of flow levels 153 facilitates uniform processing (e.g., deposition) on the substrate, center-to-edge uniformity, and process adjustability.

[0044] The processing apparatus 100 includes an exhaust duct system 190. One or more process gases P1 may be exhausted through exhaust openings formed in one or more liners 120, exhaust channels formed in the chamber body 130, and then through an exhaust box 1091. One or more process gases P1 may flow out of the exhaust box 1091 and flow to an optional common exhaust box 1092, and then flow out through the duct using one or more pump devices 197 (such as one or more vacuum pumps).

[0045] The one or more process gases P1 may include, for example, a purge gas, a cleaning gas, and / or a deposition gas. The deposition gas may include, for example, one or more reactive gases carried in one or more carrier gases.

[0046] The purge gas P2 supplied from the purge gas source 129 is introduced into the bottom area 105 of the process space 124 through one or more purge gas inlets 184 formed in the sidewall of the chamber body 130 .

[0047] One or more purge gas inlets 184 are disposed at a height below the gas injection channel 182. If one or more liners 120 are used, a section of the one or more liners 120 may be disposed between the gas injection channel 182 and the one or more purge gas inlets 184. In either case, the one or more purge gas inlets 184 are configured to direct the purge gas P2 in a substantially radially inward direction. The one or more purge gas inlets 184 may be configured to direct the purge gas P2 in an upward direction. During the film formation process, the susceptor assembly 119 is located at a position that facilitates the purge gas P2 to flow generally along a flow path that passes over the back side of the box 230. The purge gas P2 leaves the bottom region 105 and is exhausted from the processing device 100 through the one or more purge gas exhaust channels 102, which are located on the opposite side of the processing space 124 relative to the one or more purge gas inlets 184.

[0048] The base assembly 119 includes a first support frame 198 and a second support frame 199 disposed at least partially around the first support frame 198. The second support frame 199 includes an arm coupled to the cassette 230 such that raising and lowering the second support frame 199 raises and lowers the cassette 230. A plurality of lift pins 189 are suspended from the cassette 230. Lowering the cassette 230 initiates contact of the lift pins 189 with the arms of the first support frame 198. Continued lowering of the cassette 230 initiates contact of the lift pins 189 with substrates in the cassette 230 such that the lift pins 189 raise the substrates in the cassette 230. The bottom region 105 of the processing apparatus 100 is defined between the chamber body bottom 134 and the cassette 230. The rods 125 of each support frame 198, 199 extend through the bottom 134 of the chamber body 130. The rods 125 are coupled to respective motors 164 configured to independently raise, lower and / or rotate the cassette 230.

[0049] A base bellows port 160 is formed in the bottom 134 of the chamber body 130. The base bellows port 160 extends through the bottom 134 of the chamber body 130. The base bellows port 160 has a diameter greater than the diameter of the rods 125 and surrounds each rod 125, wherein the rods 125 extend through the bottom 134 of the chamber body 130. The base bellows port 160 circumferentially surrounds the rods 125. A bellows assembly 158 is disposed around each base bellows port 160 to help reduce or eliminate vacuum leakage to the outside of the chamber body 130. Each of the bellows assemblies 158 surrounds and surrounds a portion of the rod 125 disposed outside the chamber body 130. The bellows assembly 158 is coupled to an outer surface of the bottom 134 of the chamber body 130 and a base member 180. The base member 180 may house a motor 164 and a portion of the rod 125, and the rod 125 is coupled to the motor 164. The bellows assembly 158 may be formed of a metal or metallized material and configured to form an airflow channel 162. The airflow channel 162 is defined as an area between the outer stem 125 and the bellows assembly 158. The airflow channel 162 extends from the base bellows port 160 to the base member 180. Thus, the airflow channel 162 forms a hollow cylindrical passage between the bellows assembly 158 and the stem 125. The airflow channel 162 is fluidly coupled between the bottom region 105 and an exhaust conduit that can be used to pump (e.g., exhaust) gas from the bottom region 105 through the base bellows port 160.

[0050] An opening 136 is formed through one or more side walls of the chamber body 130. The opening 136 can be used to transfer the substrate 255 to or from the cassette 230, such as into and out of the processing volume 124. In one or more embodiments, the opening 136 comprises a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve that enables the substrate to pass therethrough. For purposes of visual clarity, the opening 136 is not shown in FIG. Figure 1Aand Figure 1B Shown by dotted lines.

[0051] The processing device 100 may include one or more temperature sensors 191, 192, such as optical pyrometers, which measure the temperature within the processing device 100 (such as on the surface of the upper window 116, the substrate 255 and / or one or more surfaces of the box 230). The one or more temperature sensors 191, 192 are disposed on the cover 104.

[0052] The processing device 100 includes a controller 1070 configured to control the processing device 100 or its components. For example, the controller 1070 can control the operation of the components of the processing device 100 using direct control of the components or by controlling controllers associated with the components. In operation, the controller 1070 enables data and feedback to be collected from various chambers to coordinate and control the performance of the processing device 100.

[0053] The controller 1070 generally includes a central processing unit (CPU) 1071, a memory 1072, and support circuits 1073. The CPU 1071 may be one of any form of general purpose processor that may be used in an industrial environment. The memory 1072 (or non-transitory computer readable medium) may be accessed by the CPU 1071 and may be one or more of a memory such as a random access memory (RAM), a read only memory (ROM), a floppy disk, a hard disk, or any other form of digital storage (local or remote). The support circuits 1073 are coupled to the CPU 1071 and may include caches, clock circuits, input / output subsystems, power supplies, and the like.

[0054] The various methods (such as method 1200) and operations disclosed herein may generally be implemented under the control of CPU 1071 by CPU 1071 executing computer instruction codes stored in memory 1072 (or in the memory of a particular processing chamber) as (e.g.) software routines. When CPU 1071 executes the computer instruction codes, CPU 1071 controls the components of processing chamber 100 to perform operations according to the various methods and operations described herein. In one embodiment that may be combined with other embodiments, memory 1072 (a non-transitory computer readable medium) includes instructions stored therein that, when executed, cause the methods (such as method 1200) and operations (such as operations 1201, 1202, 1204, 1206, 1207, 1208, 1210, 1212, 1213) described herein to be performed. Controller 1070 may be in communication with a heat source, a gas source, and / or a vacuum pump(s) of processing apparatus 100, for example, to cause the execution of a plurality of operations.

[0055] Figure 1B According to an implementation Figure 1AA schematic cross-sectional side view of a processing device 100 is shown in FIG. Figure 1B The cross-sectional view shown is relative to Figure 1A The cross-sectional view shown is rotated 90 degrees.

[0056] The processing apparatus 100 includes one or more side radiant heat sources 118a, 118b (e.g., side lamps, side resistive heaters, side LEDs, and / or side lasers, for example) located outside of the processing volume 124. The one or more second side heat sources 118b are opposite the one or more first side heat sources 118a across the processing volume 124.

[0057] exist Figure 1B In the embodiment, for the purpose of visual clarity, the flow guiding structure 150 and the heat shielding structure 1060 are not shown. In addition, the present disclosure contemplates that the flow guiding structure 150 and / or the heat shielding structure 1060 can be provided from Figure 1A and Figure 1B In such an implementation, one or more process gases P1 flow from the gas injection channel 182 into the outer annular region of the process volume 124 and then flow into the inlet opening 234 of the box 230 (described below and identified at Figure 2 One or more process gases P1 are discharged from outlet openings 235 (described below and identified in Figure 2 ) flows into the outer annular region of the processing volume 124 and into one or more gas exhaust passages 1172. The present disclosure also contemplates that multiple lines (such as conduits) in the processing volume 124 may connect each of the gas injection passages 182 to the inlet opening 234 (indicated in FIG. 20 ) of the box 230. Figure 2 Each of the

[0058] Figure 2 According to an implementation Figure 1A and Figure 1B 230 is a schematic side cross-sectional view of the box 230 shown in FIG. Figure 6 The area shown in 2-2 View Figure 2 The view in .

[0059] The box 230 includes a first wall 231 (e.g., a lower wall), a second wall 232 (e.g., an upper wall) spaced apart from the first wall 231, and one or more side walls 233 extending between and coupled to the first wall 231 and the second wall 232. In one or more embodiments, each of the one or more side walls 233 is formed of one or more of silicon carbide (SiC), quartz (such as opaque quartz), and / or graphite coated with SiC. In one or more embodiments, each of the first wall 231 and / or the second wall 232 is formed of one or more of silicon carbide (SiC), quartz (such as opaque quartz), and / or graphite coated with SiC.

[0060] The box 230 includes one or more inlet openings 234 formed in one or more side walls 233, and one or more outlet openings 235 formed in one or more side walls 233 opposite to the one or more inlet openings 234. The box 230 includes a plurality of levels 236 having a plurality of substrate supports 237 mounted to the one or more side walls 233 and spaced apart from each other along the one or more side walls 233. Figure 2 Five levels 236 are shown in the implementation of . The present disclosure contemplates that various numbers of levels 236 may be used, such as two levels, three levels, or six to twelve (or more) levels.

[0061] Each substrate support 237 of each level 236 includes one or more arcuate ring segments 238 (see Figure 4 In one or more embodiments, the one or more arcuate ring segments 238 include a plurality of arcuate ring segments 238 that are circumferentially spaced apart from one another along the one or more sidewalls 233 (see Figure 4 Each of the plurality of arcuate ring segments 238 includes an outer flange 240 and an inner flange 241 extending into one or more side walls 233. The portion of the arcuate ring segment 238 extending into one or more side walls 233 (such as the outer flange 240) is located at Figure 2 Shown by dotted lines.

[0062] The outer flange 240 helps to mount the substrate support 237 to one or more side walls 233. In one or more embodiments, the outer flange 240 is L-shaped and is received in an L-shaped slot formed in one or more side walls 233. The inner flange 241 helps to support the plurality of substrates 255a to 255h. Figure 2 In the illustrated implementation, the cassette 230 supports eight substrates 255a to 255h during simultaneous deposition (e.g., epitaxial deposition) of one or more layers onto each substrate. The first external substrate 255a is supported on the lowermost substrate support 237, and the second external substrate 255h is supported on the uppermost substrate support 237. A group of two intermediate substrates 255b-255g is supported on the respective substrate supports 237 in a stacked configuration such that the outer surfaces 256 of the two intermediate substrates in each group are in direct contact with each other. The outer surface 256 is a backside surface opposite the deposition surface 257 on which one or more layers are formed (e.g., epitaxially grown) during the deposition operation. For the first external substrate 255a and the second external substrate 255h, the backside surface 256 faces the first wall 231 and the second wall 232 of the cassette 230, respectively.

[0063] The box 230 includes a reflective surface 271 on the inner surface of each of the one or more side walls 233. The reflective surface 271 has a reflectivity in the range of 0.3 to 0.9999. The reflective surface 271 helps to reflect heat (e.g., light) back to the substrates 255a to 255h during the deposition operation to promote heating efficiency and maintain the substrates uniformly at the processing temperature on the processing surface of the substrate. In one or more embodiments, the reflective surface 271 is a rough surface of one or more side walls 233. The surface roughness of the rough surface can be specified to balance the reduced particle generation with the increased heat transfer of the reflective surface 271 (e.g., with respect to emissivity). In one or more embodiments, the reflective surface 271 is a portion of a liner formed of gold (Au) or quartz. In one or more embodiments, the reflective surface 271 is a portion of a reflective coating formed on one or more side walls 233.

[0064] The inner flange 241 of each substrate support 237 has an inward end 242 that extends a distance D1 of 10.0 mm or less, such as 5.0 mm or less, beyond the reflective surface 271. The distance D1 helps support the corresponding substrate 255a-255h while helping to increase deposition or etching coverage of layers on the substrate.

[0065] Figure 3 According to one implementation, during a deposition operation Figure 2 A schematic side cross-sectional view of the box 230 is shown in FIG.

[0066] Each of the one or more inlet openings 234 and each of the one or more outlet openings 235 are aligned between two of the plurality of substrate supports 237. The one or more inlet openings 234 and the one or more outlet openings 235 are arranged in a plurality of flow levels 251 ( Figure 3 251). For each flow level 251, one or more process gases P1 flow between the deposition surfaces 257 of the two substrates 255a to 255h. Each flow level 251 of the plurality of flow levels 251 of the box 230 is aligned with and fluidically connected to a corresponding injection level of the plurality of injection levels of the gas injection channel 182 (see Figure 1A Each flow level 251 of the plurality of flow levels 251 of the box 230 is aligned with and fluidically connected to a corresponding flow level 153 of the plurality of flow levels 153 of the flow guiding structure 150 (see Figure 1A ).

[0067] The cassette 230 helps reduce or eliminate deposition on the backside surface 256 of the substrates 255a - 255h during deposition operations.

[0068] The objects described herein, such as cartridge 230, facilitate increased throughput, efficient use of gases, reduced cost, and modularity in applications, such as for single-sided deposition applications, while facilitating maintaining or increasing growth rates and maintaining or enhancing device performance.

[0069] The lowermost substrate 255a is spaced apart from the first wall 231 by a first wall spacing SS1, and the uppermost substrate 255h is spaced apart from the second wall 232 by a second wall spacing SS2. In one or more embodiments, if the wall spacings SS1, SS2 are less than a distance D2 described below, a single substrate 255a, 255h is supported on each of the lowermost level 236 and the uppermost level 236. Figure 4 According to an implementation Figure 2 and Figure 3 A schematic top cross-sectional view of a box 230 is shown in FIG. Figure 4 A single flow stage 251 of a plurality of flow stages 251 is shown. Figure 4 In the illustrated implementation, for each flow stage 251, the one or more inlet openings 234 include a plurality of inlet openings 234 circumferentially spaced from one another at an angle A1 along one or more sidewalls 233 (for Figure 5 For each flow level 251 in the flow path, three inlet openings 234 are shown. Angle A1 is between the centerline axes 239 of the inlet openings 234. In one or more embodiments, angle A1 is in the range of 20 degrees to 120 degrees (such as 20 degrees, 45 degrees, 60 degrees, 90 degrees, or 120 degrees), for example, in the range of 20 degrees to 90 degrees. In one or more embodiments, each inlet opening 234 includes a nozzle 261 that is fluidly connected to the corresponding inlet opening 234 and / or at least partially inserted into the corresponding inlet opening 234. The present disclosure contemplates that where each nozzle 261 is shown, a series of nozzles may be used. In one or more embodiments, the inlet openings 234 each have a circular or oval cross-sectional shape.

[0070] The present disclosure contemplates that Figure 4 As shown, a single outlet opening 235 may be used for each flow stage 251 of the plurality of flow stages 251 .

[0071] In one or more embodiments, the box 230 includes a gap 281 formed in one or more side walls 233 (for purposes of visual clarity, the gap 281 is not shown in FIG. Figure 4 The substrate 230 may be transported in and out of the box 230 through the gap 281.

[0072] Figure 5 According to an implementation Figures 2 to 4 A schematic partial side view of the box 230 is shown in FIG.

[0073] Each of the one or more inlet openings 234 and / or the one or more outlet openings 235 is aligned so that each centerline axis 239 is aligned at a distance D2 from each of two adjacent deposition surfaces 257 of the substrates 255a to 255h. In one or more embodiments, the distance D2 is 0.5 mm or higher, such as in the range of 0.5 mm to 20 mm. In one or more embodiments, the distance D2 is 10.0 mm. The present disclosure contemplates other values ​​of the distance D2, which may depend on the processing conditions used, the uniformity used, the growth rate used, and / or the etching rate used.

[0074] Figure 6 According to an implementation Figure 2 and Figure 3 A schematic top cross-sectional view of a box 230 is shown in FIG. Figure 6 A single flow stage 251 of a plurality of flow stages 251 is shown. Figure 6 In the illustrated implementation, for each flow level 251, one or more inlet openings include one or more slots 634 extending circumferentially along one or more side walls 233 at a slot angle SA1. In one or more embodiments, the slot angle SA1 is 20 degrees or greater, such as 30 degrees or greater, for example 45 degrees or 60 degrees. In one or more embodiments, the slot angle SA1 is in the range of 20 degrees to 120 degrees, such as in the range of 60 degrees to 120 degrees. In one or more embodiments, for each flow level 251, one or more outlet openings include one or more slots 635 extending circumferentially along one or more side walls at a second slot angle SA2. In one or more embodiments, the second slot angle SA2 is less than the slot angle SA1. The present disclosure contemplates that the second slot angle SA2 may be equal to or greater than the slot angle SA1.

[0075] Figure 7 According to an implementation Figure 6 A schematic partial perspective view of the box 230 is shown in FIG.

[0076] Figure 8 According to an implementation Figure 2 and Figure 3 A schematic top cross-sectional view of a box 230 is shown in FIG. Figure 8 A single flow stage 251 of the plurality of flow stages 251 is shown.

[0077] exist Figure 8 In the illustrated implementation, for each flow stage 251, the one or more inlet openings include a plurality of slots 834 extending circumferentially along the one or more sidewalls 233. The slots 834 are circumferentially spaced apart from one another along the one or more sidewalls 233.

[0078] Although not shown for visual clarity Figures 5 to 8 It is shown in Figures 5 to 8 The implementation in may include one or more arcuate ring segments 238 (e.g., Figure 4 shown).

[0079] Fig. 9 According to an implementation Figure 2 . The gas injection assembly 900 includes a plurality of pipelines 901 (such as conduits). Each pipeline 901 is connected to one of the inlet openings 234. Each pipeline 901 may extend between one of the inlet openings 234 and one of the gas injection channels 182. The present disclosure contemplates that each pipeline 901 may be connected to or integrated into one of the nozzles 261 (if used).

[0080] Fig.10 According to an implementation Figure 2 230 . The gas injection assembly 1000 includes a plurality of pipelines 1001 (such as conduits). Each pipeline 1001 is connected to one of the inlet openings 234. Each pipeline 1001 is connected to a common distribution box 1002, which is connected to a common supply pipeline 1003. The common distribution box 1002 may include a common supply gas chamber. The present disclosure contemplates that each pipeline 1001 may be connected to or integrated into one of the nozzles 261 (if used).

[0081] Fig.11 According to an implementation Figure 2 and Figure 3 A schematic top cross-sectional view of a box 230 is shown in FIG. Fig.11 A single flow stage 251 of the plurality of flow stages 251 is shown. Fig.11 The implementation shown in is similar to Figure 4 The implementations shown in and may include one or more features, aspects, components, operations, and / or properties thereof.

[0082] The gas injection assembly 1100 includes a plurality of pipelines 1101 (such as conduits). The inlet opening 234 includes one or more connecting central openings 234a to the first pipeline 1101a, one or more first outer openings 234b connected to the second pipeline 1101b, and one or more second outer openings 234c connected to the third pipeline 1101c. Each pipeline 1101 is connected to a common distribution box 1102, which is connected to a common supply pipeline 1103. The common distribution box 1102 may include a common supply gas chamber. The gas flow in each pipeline 1101 may be independently controlled or not independently controlled to achieve a specific uniformity of deposition or etching.

[0083] Fig.12is a schematic diagram of a method 1200 for processing a plurality of substrates.

[0084] Operation 1201 of method 1200 includes changing the chamber pressure of the processing space in the chamber and then opening the door of the chamber. In one or more embodiments, the chamber pressure is changed to be substantially equal to or higher than a reference pressure. In one or more embodiments, the reference pressure is the pressure of the transfer chamber and / or the load lock chamber. The door may include, for example, a slit valve.

[0085] Operation 1202 includes positioning a first substrate in a processing volume. In one or more embodiments, positioning the first substrate includes extending the first substrate through a gap formed in one or more sidewalls of the cassette.

[0086] The present disclosure contemplates that an additional substrate (such as Fig.13 and Fig.14 The substrate 255j shown in FIG. 2 is positioned on a first substrate (such as Fig.13 and Fig.14 On the substrate 255a) shown in .

[0087] Operation 1204 includes positioning a second substrate in the processing volume at a substrate spacing from the first substrate and / or at a substrate spacing from an additional substrate (if used).

[0088] Operation 1206 includes positioning a third substrate on the second substrate such that an outer surface of the third substrate contacts an outer surface of the second substrate. In one or more embodiments, the first substrate is positioned to be supported on a first substrate support, and the second and third substrates are positioned to be supported on a second substrate support spaced apart from the first substrate support.

[0089] Operation 1207 includes closing the door (after all substrates are positioned in the process volume) and changing the chamber pressure to be at a process pressure for deposition. In one or more embodiments, the process pressure is lower than the reference pressure.

[0090] Operation 1208 includes flowing one or more process gases into the process volume. In one or more embodiments, the flowing of the one or more process gases includes flowing the one or more process gases through a first flow path between the first substrate and the second substrate and a second flow path outside the third substrate.

[0091] Operation 1210 includes heating the first substrate, the second substrate, and the third substrate.

[0092] Operation 1212 includes simultaneously depositing one or more layers on each of the first substrate, the second substrate, and the third substrate while the third substrate contacts the second substrate.

[0093] Operation 1213 includes changing the chamber pressure and then opening the door so that all substrates can be removed from the processing volume. In one or more embodiments, the chamber pressure is changed to be substantially equal to or higher than a reference pressure.

[0094] Fig.13 According to an implementation Figure 1A and Figure 1B A schematic side cross-sectional view of the box 230 is shown in FIG.

[0095] Fig.14 According to one implementation, during a deposition operation Fig.13 A schematic side cross-sectional view of the box 230 is shown in FIG.

[0096] exist Fig.13 and Fig.14 In the illustrated implementation, the first wall spacing SS1 and the second wall spacing SS2 are equal to the distance D2. In such an implementation, additional substrates 255i, 255j are stacked on the substrates 255a, 255h, respectively, so that each level 236 supports two substrates. Fig.13 and Fig.14 In the illustrated implementation, cassette 230 supports ten substrates 255a-255j, and substrate 255i is the second outer substrate (rather than substrate 255h).

[0097] Benefits of the present disclosure include increased throughput, efficient use of gases, reduced costs, reduced processing time, increased chamber capacity, increased growth rate of deposited films, enhanced device performance, more uniform device performance across multiple substrates, more uniform and stable thermal processing across multiple substrates, and reduced size and footprint (e.g., of the chamber). Benefits also include uniform adjustability, such as process temperature control and adjustability, gas parameter control and adjustability, and substrate center-to-edge control and adjustability. For example, such benefits are facilitated in relatively complex operations, such as operations requiring single-sided deposition (e.g., reducing or eliminating deposition on the backside surface of the substrate).

[0098] Benefits also include enhanced device performance and modularity in applications. For example, batch processing can be used for relatively complex epitaxial deposition operations with relatively small footprints and relatively large outputs while maintaining or enhancing growth rates and maintaining or enhancing device performance. These benefits of the present case are facilitated by the implementation of the present disclosure.

[0099] It is contemplated that aspects described herein may be combined. For example, one or more features, aspects, components, operations, and / or properties of the processing apparatus 100, cartridge 230, gas injection assembly 900, gas injection assembly 1000, gas injection assembly 1100, and / or method 1200 may be combined. It is also contemplated that any combination may achieve the benefits described above.

[0100] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A box configured to be disposed in a substrate processing chamber, the box comprising: First wall; a second wall spaced apart from the first wall; one or more side walls extending between and coupled to the first wall and the second wall; one or more inlet openings formed in the one or more side walls; one or more outlet openings formed in the one or more side walls opposite the one or more inlet openings; A plurality of levels includes a plurality of substrate supports mounted to the one or more sidewalls and spaced apart from one another along the one or more sidewalls.

2. The cartridge of claim 1, wherein each of the one or more side walls is formed of one or more of silicon carbide (SiC), quartz, or graphite coated with SiC.

3. The cartridge of claim 1, wherein each substrate support of each of the plurality of levels comprises one or more arcuate ring segments.

4. The cartridge of claim 3, wherein the one or more arcuate ring segments comprise a plurality of arcuate ring segments circumferentially spaced from one another along the one or more side walls.

5. The box of claim 4, wherein each of the plurality of arcuate ring segments includes an external flange extending into the one or more side walls.

6. The box of claim 1, further comprising a reflective surface on an inner surface of each of the one or more side walls.

7. A box as described in claim 6, wherein the reflective surface is a roughened surface of the one or more side walls.

8. The cartridge of claim 7, wherein the reflective surface is part of a liner formed of gold (Au) or quartz.

9. The cartridge of claim 6, wherein each of the plurality of substrate supports comprises an internal flange having an inward end extending beyond the reflective surface a distance of 10.0 mm or less.

10. The cartridge of claim 1, wherein each of the one or more inlet openings is aligned between two of the plurality of substrate supports.

11. The cartridge of claim 10, wherein the one or more inlet openings are positioned at a plurality of flow levels.

12. The cartridge of claim 11, wherein for each flow level, the one or more inlet openings comprise a plurality of inlet openings circumferentially spaced from one another at an angle along the one or more side walls, and the angles are in the range of 20 degrees to 120 degrees.

13. The cartridge of claim 11, wherein for each flow level, the one or more inlet openings comprises a plurality of inlet openings having a circular or oval cross-sectional shape.

14. The cartridge of claim 11, wherein for each flow level, the one or more inlet openings comprise one or more slots extending circumferentially along the one or more side walls at a slot angle.

15. An apparatus for substrate processing, the apparatus comprising: The chamber body comprises: Processing space; a plurality of gas injection channels formed in the chamber body and positioned at a plurality of injection levels; and one or more exhaust passages formed in the chamber body opposite to the plurality of gas injection passages; and one or more heat sources configured to generate heat; a susceptor assembly positioned in the processing volume; and a cartridge positioned in the processing volume and at least partially supported by the base assembly, the cartridge comprising: The first wall, a second wall, spaced apart from the first wall, one or more side walls extending between the first wall and the second wall; a plurality of inlet openings formed in the one or more sidewalls and positioned as a plurality of flow levels, each flow level of the plurality of flow levels being aligned with and in fluid communication with a corresponding injection level of the plurality of injection levels; one or more outlet openings formed in the one or more side walls opposite the plurality of inlet openings; and A plurality of substrate supports are mounted to the one or more side walls.

16. The apparatus of claim 15, wherein the one or more sidewalls are coupled to the first wall and the second wall, and the plurality of substrate supports are positioned in a plurality of levels and spaced apart from one another along the one or more sidewalls.

17. A method of processing a plurality of substrates, comprising: positioning a first substrate in a processing volume of the chamber; positioning a second substrate in the processing space at a substrate spacing from the first substrate; positioning a third substrate on the second substrate so that an outer surface of the third substrate contacts an outer surface of the second substrate; flowing one or more process gases into the process space; as well as heating the first substrate, the second substrate, and the third substrate; as well as One or more layers are deposited simultaneously on each of the first substrate, the second substrate, and the third substrate while the third substrate contacts the second substrate.

18. The method of claim 17, wherein the first substrate is positioned to be supported on a first substrate support, and the second and third substrates are positioned to be supported on a second substrate support spaced apart from the first substrate support.

19. The method of claim 18, wherein flowing the one or more process gases comprises: The one or more process gases are flowed through a first flow path between the first substrate and the second substrate and a second flow path outside the third substrate.

20. The method of claim 17, wherein said positioning said first substrate comprises: The first substrate is extended through a gap formed in one or more side walls of the box.

Images