Plasma processing apparatus

Abstract

The invention provides a plasma processing apparatus capable of improving maintainability even if an inner side cover is arranged. A plasma processing apparatus (1) is provided with: a housing (2) provided with an opening (2b) that connects the inside and the outside of a processing chamber; a vacuum cover (4) which is detachably attached to the housing (2) and which closes the opening (2b); a rod-shaped antenna (8) for generating plasma; and an antenna cover (5) forming an antenna housing space (AK) surrounding the antenna (8) between the antenna cover (5) and the vacuum cover (4). The radome (5) is divided into a plurality along the longitudinal direction of the antenna (8). The cover (14) is provided so as to cover the divided portion of the radome (5).

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus. Background Art

[0002] There is known a plasma processing apparatus that generates inductively coupled plasma in a vacuum container using an antenna disposed in the vacuum container. Depending on the type of the plasma processing apparatus, the plasma processing apparatus performs a predetermined plasma processing on a substrate to be processed using the generated plasma.

[0003] For example, the plasma processing apparatus described in Patent Document 1 includes an antenna placement unit that places a high-frequency antenna inside a cavity provided in an upper wall of a vacuum container, and a partition plate provided to cover the entire inner surface side of the upper wall.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2012 / 033191 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, in the conventional plasma processing apparatus described in Patent Document 1, the partition is fixed to the vacuum container. Therefore, when performing maintenance work on the plasma processing apparatus, for example, it is sometimes required to remove the screws fixing the partition from the inner side of the vacuum container and remove the partition from the vacuum container. In such a case, it is necessary to perform a work close to disassembling the plasma processing apparatus. Therefore, in the conventional plasma processing apparatus, there is a problem that the maintenance work requires effort and time.

[0009] The present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to provide a plasma processing apparatus that can improve maintainability even when an inner cover is provided.

[0010] Technical means of solving problems

[0011] In order to solve the above-mentioned problem, a plasma processing device according to one aspect of the present disclosure includes: a shell constituting a processing chamber and provided with an opening connecting the inside of the processing chamber with the outside; an outer cover mounted on the shell in a detachable manner and closing the opening; a rod-shaped antenna arranged in the inside of the processing chamber for generating plasma; and an inner cover arranged at a position further inward than the outer cover and constituting an enclosed space surrounding the antenna between the inner cover and the outer cover, and having dielectric properties, wherein the inner cover is divided into a plurality of parts along the long side direction of the antenna, and the plasma processing device also includes a covering cover, which is fixed to the outer cover or the inner cover, is arranged in a manner covering the divided parts of the inner cover, and has dielectric properties.

[0012] Effects of the Invention

[0013] According to an embodiment of the present disclosure, it is possible to provide a plasma processing apparatus that can improve maintainability even when an inner cover is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] [ Figure 1 ] is a diagram illustrating the structure of the plasma processing device according to embodiment 1 of the present disclosure.

[0015] [ Figure 2 ]yes Figure 1 Sectional view along line II-II.

[0016] [ Figure 3 ] is a diagram illustrating the structure of the plasma processing device of embodiment 2 of the present disclosure.

[0017] [ Figure 4 ]yes Figure 3 Sectional view along line IV-IV.

[0018] [ Figure 5 ] is a diagram illustrating the structure of the plasma processing device of embodiment 3 of the present disclosure.

[0019] [ Figure 6 ]yes Figure 5 VI-VI line cross-sectional diagram.

[0020] [ Figure 7 ] is a diagram illustrating the structure of a plasma processing device according to a fourth embodiment of the present disclosure.

[0021] [ Figure 8 ]yes Figure 7 Cross-sectional view along line VIII-VIII.

[0022] [ Fig. 9 ] is a diagram illustrating the structure of a plasma processing device according to a modified example of the present disclosure. DETAILED DESCRIPTION

[0023] [Implementation method 1]

[0024] Below, use Figure 1 and Figure 2 Embodiment 1 of the present disclosure will be described in detail. Figure 1 This is a diagram for explaining the structure of the plasma processing apparatus 1 according to the first embodiment of the present disclosure. Figure 2 yes Figure 1 Sectional view along line II-II.

[0025] In the following description, a plasma processing device 1 is exemplified for explanation. The plasma processing device 1 performs a film forming process as a predetermined plasma process. The film forming process forms a predetermined film on the surface of a substrate H1 as a processing object by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma.

[0026] However, the present disclosure can be applied to a plasma processing device 1 that performs, for example, a film forming process of forming a predetermined film on a substrate H1 to be processed by a sputtering method as a predetermined plasma processing. In addition, the present disclosure can be applied to a plasma processing device 1 that performs a surface processing process of performing a predetermined processing on the surface of the substrate H1 to be processed by using plasma, such as an etching process or an ashing process as a predetermined plasma processing. In addition, in a plasma processing device 1 that performs a sputtering method, a target material is, for example, disposed inside a plasma generation region HA described later.

[0027] <Structure of plasma processing apparatus 1>

[0028] like Figure 1 and Figure 2 As shown in FIG. 1 , the plasma processing apparatus 1 of the first embodiment includes a housing 2, a flange (spacer) 33, a vacuum cover (outer cover) 4, an antenna cover (inner cover) 5, a stage 6, an antenna 8, and a covering cover 14. Figure 2 As shown, a plurality of antennas 8, for example, four antennas 8 are provided, and a vacuum cover 4, an antenna cover 5, and a covering cover 14 are provided for each antenna 8. Furthermore, in the plasma processing apparatus 1, the substrate H1 to be processed is transferred between the stage 6 and a known load lock chamber by a transfer mechanism (not shown).

[0029] The substrate H1 to be processed may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display or an organic electroluminescence (EL) panel display. In addition, the substrate H1 to be processed may be a semiconductor substrate for various purposes. The plasma processing device 1 forms a predetermined film such as a barrier (moisture-proof) film on the substrate H1 to be processed by the predetermined plasma processing.

[0030] <Case 2>

[0031] The housing 2 constitutes a processing chamber for performing the prescribed plasma processing on the substrate H1 to be processed. In addition, the housing 2 includes a box-shaped housing body 2a with an upper opening, and a first opening 2b as an opening for connecting the processing chamber with the external environment is provided at the upper part of the housing body 2a. Figure 2 As shown in FIG. 1 , a flange 33 having a plurality of openings is airtightly mounted on the upper end surface of the housing 2 (housing body 2a). In the plasma processing apparatus 1, when the flange 33 is mounted on the housing body 2a, the openings of the flange 33 are included in the first opening 2b that connects the inside of the processing chamber with the outside. In other words, when the flange 33 and the vacuum cover 4 are mounted on the upper end surface of the housing 2, the vacuum cover 4 detachably mounted on the housing 2 closes the first opening 2b together with the flange 33.

[0032] <Flange 33>

[0033] like Figure 2 As shown, the flange 33 includes, for example, five flange members 33a, 33b, 33c, 33d, and 33e, which function as spacers for mounting the vacuum hood 4 on the housing 2. In other words, each of these flange members 33a to 33e is constructed using a plate having a step portion formed thereon for mounting the vacuum hood 4. In addition, one end and the other end of each flange member 33a to 33e are fixed to the upper surfaces of the two sides of the housing body 2a that face each other (not shown). The flange members 33a to 33e are parallel to each other along the long side direction of the antenna 8 and in a direction orthogonal to the long side direction (i.e., Figure 2 They are installed on the shell 2 in a manner that they are evenly spaced in the left-right direction of the paper surface).

[0034] Thus, in the first embodiment, the flange members 33a to 33e function as the spacers, and thus the positions of the vacuum cover 4 and the antenna 8 mounted thereon can be adjusted by adjusting the spacers. Thus, in the first embodiment, the height adjustment of the antenna 8 relative to the substrate H1 to be processed and the tilt adjustment in the long side direction can be easily performed, so that the plasma processing apparatus 1 capable of performing high-precision plasma processing can be easily constructed.

[0035] <Vacuum cover 4>

[0036] In addition, in the plasma processing apparatus 1, the vacuum hood 4 that closes the first opening 2b is configured to be installed on the housing 2 in a detachable manner. That is, the vacuum hood 4 is airtightly installed on the housing body 2a via the flange 33 in a manner of closing the first opening 2b, and is installed to be reversibly detachable from the flange 33 and the housing body 2a. Here, the flange 33 has the step portion that is formed to gradually reduce the opening area of ​​the first opening 2b in a direction from the external environment toward the processing chamber. For example, the flange member 33a to the flange member 33e each have a support portion that can protrude inside the first opening 2b in a manner to lock the peripheral portion of the vacuum hood 4. The support portion may also be a part of the step portion. In addition, the vacuum hood 4 is an example of an outer hood, such as Figure 2 As shown, the flange members 33a to 33e are supported by contacting with the upper surfaces of the stepped portions. The vacuum cover 4 is made of metal, for example.

[0037] <Radome 5>

[0038] In addition, in the plasma processing device 1, the antenna cover 5 is fixed to the vacuum cover 4 at the inner side of the housing 2 relative to the vacuum cover 4. In addition, in the plasma processing device 1, an antenna accommodation space AK surrounded by at least the vacuum cover 4 and the antenna cover 5 is formed. The antenna accommodation space AK is an example of an enclosed space, and the antenna 8 for generating inductively coupled plasma is accommodated. However, in the antenna accommodation space AK, the size of the space is set to a size that cannot maintain the plasma generated by the antenna 8, and thus functions as a plasma non-generation area.

[0039] like Figure 1 and Figure 2 As shown, the antenna cover 5 includes, for example, an antenna housing portion 5a having a U-shaped cross section. In addition, the antenna cover 5 is divided into a plurality of parts along the long side direction of the antenna 8. Specifically, the antenna housing portion 5a of the antenna cover 5 includes a plurality of, for example, four, antenna housing components 5a1, 5a2, 5a3, and 5a4 divided into a plurality of parts along the long side direction of the antenna 8. These antenna housing components 5a1 to 5a4 constitute the divided parts of the antenna cover 5, respectively.

[0040] In the antenna housing portion 5a, two adjacent antenna housing members 5a1 to 5a4 are arranged with a predetermined gap therebetween. Specifically, the antenna housing member 5a1 and the antenna housing member 5a2 are arranged with a gap K1 therebetween. The antenna housing member 5a2 and the antenna housing member 5a3 are arranged with a gap K2 therebetween. The antenna housing member 5a3 and the antenna housing member 5a4 are arranged with a gap K3 therebetween.

[0041] The antenna housing members 5a1 to 5a4 each include a cover support portion 5b and a cover opening portion 5c. The cover support portion 5b is formed continuously from both ends of the corresponding antenna housing members 5a1 to 5a4, and is a flange portion formed in a manner extending outward from the ends of the corresponding antenna housing members 5a1 to 5a4. That is, the cover support portion 5b has an outward flange shape. In addition, as Figure 2 As shown, the cover support portion 5b is fixed to the inner surface of the vacuum cover 4 using, for example, screws (not shown), whereby the corresponding antenna housing members 5a1 to 5a4 are directly attached to the vacuum cover 4.

[0042] In addition, the antenna cover 5 is made of a dielectric material such as glass or quartz, and constitutes an inner cover having dielectric properties. In addition, in the antenna cover 5, the antenna housing members 5a1 to 5a4 are formed in a manner corresponding to the shape of the antenna 8. The antenna housing members 5a1 to 5a4 are configured to cover a portion of the outer peripheral surface of the antenna 8 when the antenna 8 is installed. Furthermore, in the antenna cover 5, the cover opening 5c ​​is provided in a manner opening to the vacuum cover 4 side. The cover opening 5c ​​is an example of a second opening that constitutes a portion of the antenna housing space AK.

[0043] In addition, in the plasma processing apparatus 1 of the first embodiment, Figure 2 As shown, the radome 5 is supported on the inner side of the housing 2 by a flange 33 provided on the upper end surface of the housing body 2a. Thus, in the first embodiment, the plasma processing device can be compactly configured compared to the case where the radome is mounted on the housing in a state where the antenna support portion of the radome is in contact with the upper surface of the housing. In other words, in the plasma processing device 1 of the first embodiment, the radome 5 can be detachably mounted on the housing 2 without the upper portion of the radome 5 (the cover support portion 5b) protruding from the upper surface of the housing 2. Thus, in the plasma processing device 1 of the first embodiment, the housing 2 can be prevented from being enlarged.

[0044] <Antenna 8>

[0045] The antenna 8 is, for example, rod-shaped and made of a metal material such as copper. In addition, one end and the other end of the antenna 8 are provided in a state of being electrically insulated from the vacuum cover 4 via the antenna insulating portion 13A and the antenna insulating portion 13B, respectively, and are pulled out to the outside of the housing 2 in an airtight manner. Specifically, Figure 1As shown, the antenna 8 includes a straight portion 8a formed in a straight line, and a bent portion 8b and a bent portion 8d which are provided continuously with the straight portion 8a and are bent relative to the straight portion 8a. In addition, the antenna 8 includes a terminal portion 8c and a terminal portion 8e, which are provided continuously with the bent portion 8b and the bent portion 8d, respectively, and are respectively held by the antenna insulating portion 13A and the antenna insulating portion 13B, and are pulled out to the outside of the housing 2.

[0046] In addition, the antenna 8 is provided with a cooler 12, and the antenna 8 is cooled to a predetermined temperature by a cooling medium, such as cooling water, that circulates through the cooler 12. Specifically, the cooler 12 includes: a cooler body 12a, which includes a driving unit such as a pump (not shown) for circulating cooling water; and a pipe 12b, which is airtightly connected to the cooler body 12a. In addition, the pipe 12b is also arranged in the internal space of the antenna 8, and is configured to use the internal space of the antenna 8 as a circulation path for cooling water. That is, in the antenna 8, as shown in FIG. Figure 1 As indicated by arrows R1 and R2 , the antenna 8 is cooled by causing cooling water to flow through the inner space of the antenna 8 .

[0047] In addition, an impedance adjusting unit 10 and an impedance adjusting unit 11 are electrically connected to one terminal 8c and the other terminal 8e of the antenna 8, respectively. The impedance adjusting unit 10 includes a matching circuit (not shown), and one end of the antenna 8 is connected to the power supply 9 via the matching circuit. In addition, the impedance adjusting unit 11 includes a variable capacitor, and the other terminal 8e of the antenna 8 is electrically grounded via the variable capacitor.

[0048] In addition, if Figure 1 As shown, the antenna 8 includes a straight portion 8a and a bent portion 8b and a bent portion 8d as main portions for generating plasma, except for the lead-out portions to the outside of the housing 2, namely, the terminal portions 8c and the terminal portions 8e. Thus, in the plasma processing device 1 of the first embodiment, the antenna can be manufactured easily and at a low cost, compared with the case where the antenna includes a curved shape such as a spiral or a U shape. In addition, in the first embodiment, by adjusting the inclination of the antenna 8 in the long side direction, the generation distribution of the plasma generated by the antenna 8 can be easily adjusted.

[0049] In addition, if Figure 2 As shown, the antenna cover 5 includes antenna housing components 5a1 to 5a4 having a U-shaped cross section, and the antenna housing components 5a1 to 5a4 are formed corresponding to and accommodate the main part of the antenna 8. Therefore, in the first embodiment, even when a plurality of antennas 8 are provided, it is easy to provide space for each of the plurality of antennas 8, thereby miniaturizing the housing 2 and the plasma processing device 1.

[0050] The power supply 9 supplies, for example, 13.56 MHz high frequency power to one end of the antenna 8 via the impedance adjuster 10. In the plasma processing apparatus 1, the control unit (not shown) controls the antenna 8 to efficiently supply high frequency power by changing the capacitance of the variable capacitor of the impedance adjuster 11.

[0051] In addition, in the first embodiment, the power source 9, the impedance adjustment unit 10, and the impedance adjustment unit 11 are provided for each antenna 8, and the control unit can perform generation control of plasma generated in each antenna 8 by controlling the power source 9 for each antenna 8. Therefore, in the first embodiment, the control unit can make the antenna 8 operate more appropriately and can reliably suppress the generation of plasma in the antenna accommodation space AK. As a result, in the first embodiment, the generation of damage to the antenna 8 can be more reliably suppressed.

[0052] The cover 14 has dielectric properties using a dielectric material such as silicon carbide or aluminum oxide. Figure 1 As shown, the cover 14 includes a plurality of, for example, three, covering members 14a, 14b, and 14c divided along the longitudinal direction of the antenna 8. These covering members 14a to 14c are provided so as to cover the divided portions of the radome 5.

[0053] Specifically, the covering member 14a is installed on the antenna housing member 5a1 and the antenna housing member 5a2 in a manner that at least closes the gap K1. The covering member 14b is installed on the antenna housing member 5a2 and the antenna housing member 5a3 in a manner that at least closes the gap K2. The covering member 14c is installed on the antenna housing member 5a3 and the antenna housing member 5a4 in a manner that at least closes the gap K3. In this way, since the covering members 14a to 14c close the gaps K1 to K3 respectively, the possibility of the plasma generated inside the housing 2 entering the inside of the antenna housing space AK can be greatly reduced.

[0054] In the covering cover 14, the covering members 14a to 14c are respectively mounted on the antenna cover 5 by fixing members such as screws not shown. In addition, in the covering cover 14, the covering members 14a and 14c are respectively arranged to face the bending portion 8b and the bending portion 8d of the antenna 8. As a result, it is possible to suppress the plasma density of the area facing only the bending portion 8b and the bending portion 8d in the interior of the housing 2 from being inappropriately increased, so that the substrate H1 to be processed can be easily subjected to high-precision plasma processing. In addition, in addition to the above description, for example, the covering members 14a to 14c may be mounted on the vacuum cover 4.

[0055] In addition, in the plasma processing apparatus 1 of the present embodiment 1, the antenna cover 5 is covered by the covering cover 14 provided on the inner side of the housing 2. Therefore, in the plasma processing apparatus 1 of the present embodiment 1, the antenna cover 5 is formed using a material having a lower plasma resistance than the covering cover 14, that is, a material having a lower durability against the plasma generated inside the housing 2. Specifically, as described above, the antenna cover 5 and the covering cover 14 can be formed using a dielectric material such as glass or quartz and a dielectric material such as silicon carbide or aluminum oxide, respectively. As a result, in the present embodiment 1, the antenna cover 5 can be easily formed at a low cost, and further, the plasma processing apparatus 1 can be easily formed at a low cost.

[0056] In addition, in the housing 2, by installing the antenna cover 5 and the covering cover 14 inside the first opening 2b, the internal space of the housing 2 is delimited and a plasma generation area HA is formed inside the housing body 2a. The carrier 6 and the substrate H1 to be processed supported by the carrier 6 are arranged inside the plasma generation area HA, and the plasma generation area HA substantially constitutes the processing chamber. In other words, in the housing 2, the plasma generation area HA is separated from the plasma non-generation area by the antenna cover 5 and the covering cover 14.

[0057] Furthermore, in the housing 2, the flange 33 and the vacuum cover 4 are airtightly mounted on the housing body 2a, thereby forming a vacuum container including the processing chamber. Figure 1 As shown, in the housing 2, a vacuum pump PO is connected to the housing body 2a, and the control unit controls the vacuum pump PO, whereby the interior of the plasma generation area HA becomes a predetermined vacuum degree at least during plasma processing.

[0058] Specifically, in the shell 2, the vacuum pump PO is used to exhaust gas, so that the pressure in the plasma generation area HA is reduced, and the pressure in the antenna accommodation space AK is also reduced. The reason for this is that the portion where the antenna cover 5 and the shell 2 are connected to each other is not vacuum-sealed, and the plasma generation area HA and the antenna accommodation space AK are connected to each other via a gap. The antenna accommodation space AK is narrower than the plasma generation area HA and becomes an area where it is difficult to generate and maintain plasma (plasma non-generation area). When the antenna 8 is energized to generate plasma in the plasma generation area HA, the gas pressure in the antenna accommodation space AK can be the same as that in the plasma generation area HA, for example, 1Pa to 100Pa. In addition, if Figure 1 As shown, the housing 2 and the carrier 6 are electrically grounded respectively.

[0059] Furthermore, a first pressure gauge (not shown) for detecting the pressure (vacuum degree) inside the plasma generation area HA is provided in the housing 2 , and the control unit controls the vacuum degree inside the plasma generation area HA using the detection result of the first pressure gauge.

[0060] In addition, a temperature sensor (not shown) for detecting the temperature of the stage 6 is provided in the housing 2, and the detection result of the temperature sensor is output to the control unit. Then, the control unit controls the stage 6 to a predetermined set temperature during the plasma processing by performing feedback control using the input detection result of the temperature sensor.

[0061] In addition, the housing 2 includes a processing gas supply unit (not shown) corresponding to the predetermined plasma processing, and the plasma processing is performed under the processing gas atmosphere. The processing gas supply unit introduces a processing gas including a film-forming gas for the film into the plasma generation area HA (processing chamber) of the housing 2. In addition, the processing gas is, for example, argon, hydrogen, nitrogen, silane or oxygen.

[0062] The plasma processing device 1 of the present embodiment 1 constructed as described above includes: a housing 2 provided with a first opening 2b connecting the inside of the processing chamber with the outside; and a vacuum cover 4 detachably mounted on the housing 2 and closing the first opening 2b. In addition, the plasma processing device 1 includes: a rod-shaped antenna 8 for generating plasma; and an antenna cover 5 forming an antenna housing space AK surrounding the antenna 8 between the antenna cover 5 and the vacuum cover 4. In the plasma processing device 1, the antenna cover 5 has a plurality of antenna housing members 5a1 to 5a4 divided into a plurality of antenna housing members along the long side direction of the antenna 8. In addition, in the plasma processing device 1, the covering cover 14 is provided in a manner covering the antenna housing members 5a1 to 5a4 of the antenna cover 5.

[0063] With the above structure, in the present embodiment 1, it is possible to configure a plasma processing apparatus 1 that can improve maintainability even when the antenna cover 5 is provided. Specifically, in the present embodiment 1, the vacuum cover 4, the antenna cover 5, and the covering cover 14 can be freely taken out from the first opening 2b side relative to the housing 2. As a result, in the present embodiment 1, when performing maintenance work on the plasma processing apparatus 1, the vacuum cover 4, the antenna cover 5, and the covering cover 14 can be easily removed from the housing 2, thereby significantly reducing the possibility that the maintenance work requires effort and time.

[0064] In addition, in the first embodiment, the vacuum cover 4, the antenna cover 5, and the covering cover 14 are provided for each antenna 8, so that installation work, replacement work, position adjustment work, and maintenance work can be performed on the antenna 8 as a unit. As a result, in the first embodiment, a plasma processing apparatus 1 that is easy to process and has high quality can be simply configured.

[0065] In addition, in the first embodiment, since the antenna cover 5 is fixed to the vacuum cover 4, it is not necessary to directly handle the antenna cover 5 when installing or removing the antenna 8. Therefore, in the first embodiment, the possibility of damage such as a notch or a crack in the antenna cover 5 can be greatly reduced, thereby reducing the maintenance time and cost of the plasma processing device 1.

[0066] In addition, in the first embodiment, since the antenna cover 5 is divided into the antenna housing member 5a1 to the antenna housing member 5a4, the cost of the antenna cover 5 itself can be reduced. In addition, in the antenna cover 5, for example, even if it is damaged and needs to be replaced, only one of the antenna housing member 5a1 to the antenna housing member 5a4 that needs to be replaced can be replaced. As a result, in the first embodiment, the maintenance time and cost of the plasma processing device 1 can be reduced.

[0067] In the first embodiment, by changing the length of any one of the antenna housing members 5a1 to 5a4 in the antenna cover 5, the change in the dimension of the antenna 8 in the long side direction can be easily coped with, thereby making it possible to simply construct a low-cost plasma processing device 1.

[0068] In addition, in the first embodiment, the gaps K1 to K3 are provided in the antenna cover 5. Therefore, even if a difference in thermal expansion coefficient occurs in each antenna housing member 5a1 to 5a4, the possibility of contact between two adjacent antenna housing members 5a1 to 5a4 can be greatly reduced by the corresponding gaps K1 to K3. As a result, in the first embodiment, damage to the antenna housing members 5a1 to 5a4 caused by the difference in thermal expansion coefficient can be reliably suppressed.

[0069] In addition, in the first embodiment, the covering cover 14 divided into the covering members 14a to 14c is provided so as to cover the antenna cover 5, so that the thickness of the dielectric obtained by adding up the thicknesses of the antenna cover 5 and the covering cover 14 in the long side direction of the antenna 8 can be easily adjusted. As a result, in the first embodiment, the plasma density at the surface of the substrate H1 to be processed can be adjusted, so that the substrate H1 to be processed can be easily subjected to high-precision plasma processing. In addition, in the first embodiment, since the in-plane uniformity of the plasma generated in the processing chamber can be easily improved, the startup time of the plasma processing device 1 can be shortened.

[0070] In addition, in the first embodiment, the antenna cover 5 includes: an antenna housing portion 5a formed in a manner consistent with the shape of the antenna 8; and a cover opening 5c ​​constituting a part of the antenna housing space AK. Therefore, in the first embodiment, the antenna 8 can be easily arranged close to the substrate H1 to be processed on the stage 6. As a result, in the first embodiment, the plasma processing of the substrate H1 to be processed can be performed efficiently.

[0071] In addition, in this embodiment 1, if Figure 2 As shown in FIG. 1 , the antenna 8 is disposed inside the housing 2 in such a manner that it protrudes toward the substrate H1 through the antenna housing portion 5a of the antenna cover 5. Therefore, in the first embodiment, when the circumferential direction of the antenna 8 is considered, the plasma generation area from the antenna 8 can be made larger than 180 degrees. Figure 2 In this embodiment, plasma used in the plasma treatment can be applied to the substrate H1 from a portion above the diameter of the antenna 8. As a result, in the first embodiment, plasma used in the plasma treatment can be efficiently generated.

[0072] In addition, in this embodiment 1, if Figure 1 As shown, one end and the other end of the long side direction of the antenna 8 are arranged inside the housing 2 in a state of being held by the antenna housing portion 5a of the antenna cover 5. Therefore, in the first embodiment, the plasma used in the plasma treatment can be applied to the substrate H1 to be processed from one end and the other end of the long side direction of the antenna 8. As a result, in the first embodiment, the decrease in the density of the plasma from one end and the other end can be suppressed, so that the uniformity of the plasma density in the long side direction of the antenna 8 can be improved.

[0073] In addition, in the plasma processing apparatus 1 of the first embodiment, the antenna cover 5 and the covering cover 14 separate the plasma generating area HA from the plasma non-generating area (antenna housing space AK). Therefore, in the first embodiment, even if the antenna 8 and the like are damaged due to the generation of abnormal discharge or the generation of plasma, and contaminants such as particles are generated in the antenna housing space AK, the antenna cover 5 and the covering cover 14 can greatly suppress the intrusion of the contaminants into the plasma generating area HA side, thereby minimizing the possibility of degradation of the quality of the substrate H1 to be processed due to the contaminants.

[0074] [Implementation method 2]

[0075] use Figure 3 and Figure 4 Embodiment 2 of the present disclosure will be described in detail. Figure 3This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a second embodiment of the present disclosure. Figure 4 yes Figure 3 For convenience of description, components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and description thereof will not be repeated.

[0076] The main difference between the second embodiment and the first embodiment is that a flange 3 integrally formed in a frame shape is used as the spacer instead of the flange portion 33 including the five flange members 33a to 33e.

[0077] like Figure 3 and Figure 4 As shown, in the plasma processing device 1 of the present embodiment 2, the vacuum cover 4 is installed on the housing 2 via the flange (spacer) 3. The flange 3, for example, includes a rectangular frame having two first sides 3a facing each other, and two second sides 3b orthogonal to the first sides 3a and facing each other. In addition, the flange 3, for example, includes a third side 3c, a fourth side 3d, and a fifth side 3e arranged from one of the second sides 3b to the other second side 3b on the inner side of the frame. That is, each of the two ends of the third side 3c, the fourth side 3d, and the fifth side 3e is formed continuously with the second side 3b. The third side 3c, the fourth side 3d, and the fifth side 3e can be formed between the two first sides 3a to be parallel to the first side 3a.

[0078] In addition, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e may respectively have a protrusion protruding toward the first opening 2b side. In addition, in the following description, the first side 3a, the second side 3b, the third side 3c, the fourth side 3d, and the fifth side 3e are collectively referred to as side 3h.

[0079] In the plasma processing apparatus 1 of the second embodiment, the antenna cover (inner cover) 15 is supported by the flange 3 in the interior of the first opening 2b so as to be detachable from the flange 3. Figure 3 and Figure 4As shown, the antenna cover 15 includes, for example, an antenna housing portion 15a having a U-shaped cross section. In addition, the antenna cover 15 is divided into a plurality of parts along the long side direction of the antenna 8. Specifically, the antenna housing portion 15a of the antenna cover 15 includes antenna housing members 15a1, 15a2, 15a3, and 15a4 divided into a plurality of parts, for example, four parts, along the long side direction of the antenna 8. These antenna housing members 15a1 to 15a4 respectively constitute the divided parts of the antenna cover 15. In addition, the covering cover 14 is provided in a manner covering the antenna housing members 15a1 to 15a4 in the same manner as in the first embodiment.

[0080] In the antenna housing portion 15a, two adjacent antenna housing members 15a1 to 15a4 are arranged with a predetermined gap therebetween. Specifically, the antenna housing member 15a1 and the antenna housing member 15a2 are arranged with a gap K1 therebetween. The antenna housing member 15a2 and the antenna housing member 15a3 are arranged with a gap K2 therebetween. The antenna housing member 15a3 and the antenna housing member 15a4 are arranged with a gap K3 therebetween.

[0081] The antenna housing components 15a1 to 15a4 each include a cover support portion 15b and a cover opening portion 15c. The cover support portion 15b is formed continuously from both ends of the corresponding antenna housing components 15a1 to 15a4, and is a flange portion formed in a manner extending outward from the ends of the corresponding antenna housing components 15a1 to 15a4. That is, the cover support portion 15b has an outward flange shape. In addition, as Figure 3 and Figure 4 As shown, the cover support portion 15b is supported by the side portion 3h of the flange 3 via the covering cover 14, whereby the corresponding antenna housing members 15a1 to 15a4 are respectively attached to the flange 3 and the housing body 2a.

[0082] The antenna cover 15 is made of a dielectric material such as glass or quartz, and forms an inner cover having dielectric properties. In the antenna cover 15, the antenna housing members 15a1 to 15a4 are formed in a manner corresponding to the shape of the antenna 8. The antenna housing members 15a1 to 15a4 are formed in a shape that covers a portion of the outer peripheral surface of the antenna 8 when the antenna 8 is installed. Furthermore, in the antenna cover 15, the cover opening 15c is provided in a manner that opens to the vacuum cover 4 side. The cover opening 15c is an example of a second opening that constitutes a portion of the antenna housing space AK.

[0083] In addition, in the plasma processing apparatus 1 of the second embodiment, Figure 4As shown, the radome 15 is supported on the inner side of the housing 2 by the flange 3 provided on the upper end surface of the housing body 2a. Therefore, in the second embodiment, the plasma processing device can be configured compactly compared with the case where the radome is mounted on the housing in a state where the antenna support portion of the radome is in contact with the upper surface of the housing. In other words, in the plasma processing device 1 of the second embodiment, the radome 15 can be mounted on the housing 2 in a detachable manner without the upper portion of the radome 15 (the cover support portion 15b) protruding from the upper surface of the housing 2. Therefore, in the plasma processing device 1 of the second embodiment, the housing 2 can be prevented from being enlarged.

[0084] Here, for example, the side portion 3h of the flange 3 may have a second support portion that protrudes inside the first opening 2b so as to lock the peripheral portion of the antenna cover 15. The second support portion is a part of the protruding portion, and protrudes further toward the inside of the first opening 2b than the first support portion (the protruding length is larger). In a state where the antenna cover 15 is supported inside the first opening 2b, the cover support portion 15b is supported by (the second support portion of) the side portion 3h of the flange 3. In addition, the antenna cover 15 has a cover opening 15c formed by being surrounded by the antenna accommodating portion 15a.

[0085] According to the above configuration, the plasma processing apparatus 1 of the second embodiment achieves the same effects as those of the first embodiment.

[0086] In addition, in the plasma processing apparatus 1 of the second embodiment, the flange 3 for detachably supporting the antenna cover 15 is provided on the first opening 2b side of the housing 2. Thus, in the second embodiment, the antenna cover 15 can be easily provided on the housing 2. Furthermore, in the second embodiment, the vacuum cover 4, the antenna cover 15, the covering cover 14, the antenna 8, etc. can be easily removed from the housing 2, so that the plasma processing apparatus 1 with excellent maintainability can be easily configured.

[0087] In addition, in the second embodiment, unlike the above-mentioned previous example using screw fastening, the antenna cover 15 can be installed inside the housing 2 without being screwed or the like. As a result, in the second embodiment, even when the inside of the plasma generation area HA (processing chamber) is placed in a vacuum environment with a predetermined vacuum degree, the possibility of cracks or deformations occurring in the antenna cover 15 starting from the screwed portion can be greatly reduced, unlike the above-mentioned previous example.

[0088] [Implementation method 3]

[0089] use Figure 5 and Figure 6 Embodiment 3 of the present disclosure will be described in detail. Figure 5It is a figure explaining the structure of the plasma processing apparatus 1 in Embodiment 3 of this disclosure. Figure 6 yes Figure 5 For convenience of description, the same reference numerals are given to components having the same functions as those described in the first embodiment, and their description will not be repeated.

[0090] The main difference between the third embodiment and the second embodiment is that a support table 16 is provided in the spacer, and the support table 16 supports the vacuum cover 4 to the housing 2 in a detachable manner.

[0091] like Figure 5 and Figure 6 As shown, in the plasma processing apparatus 1 of the third embodiment, a support table (spacer) 16 is provided between the vacuum cover 4 and the flange 3. The support table 16 detachably supports the vacuum cover 4 on the housing 2. In addition, the antenna cover 15 is supported on the flange 3 via the support table 16.

[0092] With the above configuration, the plasma processing apparatus 1 of the third embodiment can achieve the same effects as those of the second embodiment.

[0093] In the plasma processing apparatus 1 of the third embodiment, the antenna 8 and the vacuum cover 4 can be removed from the housing 2 together with the antenna cover 15 and the covering cover 14. As a result, in the third embodiment, the maintainability of the plasma processing apparatus 1 can be further improved.

[0094] In addition, in the third embodiment, the support height of the antenna cover 15 can be partially adjusted with respect to the support table 16, and the antenna 8 can be mounted on the vacuum cover 4 in accordance with the adjusted support table 16. Therefore, in the third embodiment, the height of the antenna 8 relative to the antenna cover 15 and the substrate H1 to be processed and the inclination in the long side direction can be easily adjusted. As a result, in the third embodiment, a plasma processing apparatus 1 capable of performing high-precision plasma processing can be easily configured.

[0095] [Implementation method 4]

[0096] use Figure 7 and Figure 8 Embodiment 4 of the present disclosure will be described in detail. Figure 7 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a fourth embodiment of the present disclosure. Figure 8 yes Figure 7 For the sake of convenience, the same reference numerals are given to components having the same functions as those described in the first embodiment, and their description will not be repeated.

[0097] The main difference between the fourth embodiment and the first embodiment is that a spacer member 18 is interposed between the vacuum cover 4 and the flange portion 33 as the spacer.

[0098] like Figure 7 and Figure 8 As shown, in the plasma processing device 1 of the fourth embodiment, a spacer member (spacer) 18 is provided between the vacuum cover 4 and the flange 33 for each antenna 8. The spacer member 18 is formed into a frame shape using, for example, a metal material, and is provided on the upper end surface of the housing body 2a. The spacer member 18 is formed into a rectangular shape and supports the four sides of the vacuum cover 4.

[0099] According to the above configuration, the plasma processing apparatus 1 of the fourth embodiment achieves the same effects as those of the first embodiment.

[0100] In addition, in the plasma processing apparatus 1 of the fourth embodiment, since the vacuum cover 4 and the antenna 8 mounted thereon are supported on the housing 2 via the spacer member 18, the position of the antenna 8 can be adjusted by adjusting the spacer member 18. In other words, in the fourth embodiment, unlike the first embodiment, the height adjustment of the antenna 8 relative to the substrate H1 to be processed and the tilt adjustment in the long side direction can be easily performed without changing the flange portion 33.

[0101] [Variation]

[0102] use Fig. 9 Modifications of the present disclosure will be described in detail. Fig. 9 This is a diagram for explaining the structure of a plasma processing apparatus 1 according to a modified example of the present disclosure. For convenience of explanation, components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and their description will not be repeated.

[0103] The main difference between this modification and the first embodiment is that a covering cover 24 that covers the entire radome 5 is provided.

[0104] In the plasma processing apparatus 1 of this modification, the covering cover 24 is provided so as to cover the entire surface of the housing 2 side of the antenna cover 5. Therefore, in this modification, the maintenance of the plasma processing apparatus 1 can be completed by replacing only the covering cover 24. As a result, in this modification, the plasma processing apparatus 1 having excellent maintainability can be easily configured.

[0105] In addition, in addition to the above description, the cover 24 may be divided into a plurality of covering members along the longitudinal direction of the antenna 8 in the same manner as in the above embodiment.

[0106] 〔Summarize〕

[0107] In order to solve the above-mentioned problem, a plasma processing device according to a first embodiment of the present invention includes: a shell body constituting a processing chamber and provided with an opening connecting the inside of the processing chamber with the outside; an outer cover mounted on the shell body in a detachable manner and closing the opening; a rod-shaped antenna arranged inside the processing chamber for generating plasma; and an inner cover arranged at a position further inside than the outer cover and constituting an enclosed space surrounding the antenna between the inner cover and the outer cover, and having dielectric properties, wherein the inner cover is divided into a plurality of parts along the long side direction of the antenna, and the plasma processing device also includes a covering cover, which is fixed to the outer cover or the inner cover, is arranged in a manner covering the divided parts of the inner cover, and has dielectric properties.

[0108] With the above structure, it is possible to provide a plasma processing apparatus with improved maintainability.

[0109] According to a second embodiment of the present disclosure, in the plasma processing apparatus of the first embodiment, the outer cover may be mounted on the housing via a spacer.

[0110] With the above structure, the position of the antenna can be adjusted by adjusting the spacer, thereby making it easy to adjust the height of the antenna relative to the object to be processed and to adjust its tilt in the long side direction, thereby making it easy to construct a plasma processing device capable of performing high-precision plasma processing.

[0111] According to a third embodiment of the present disclosure, in the plasma processing apparatus of the second embodiment, the spacer may include a support table that detachably supports the outer cover.

[0112] With the above structure, the antenna, the inner cover, and the cover cover can be removed integrally with the outer cover, thereby further improving maintainability.

[0113] According to a fourth embodiment of the present disclosure, in the plasma processing apparatus according to any one of the first to third embodiments, the covering cover may be provided to cover the entire inner cover.

[0114] According to the above configuration, since the covering cover is provided to cover the entire inner cover, maintenance of the plasma processing apparatus can be completed by simply replacing the covering cover, and a plasma processing apparatus having excellent maintainability can be easily configured.

[0115] According to a fifth embodiment of the present disclosure, in the plasma processing apparatus of any one of the first to fourth embodiments, the covering cover may include a plurality of covering members divided along a longitudinal direction of the antenna.

[0116] According to the above structure, the plasma density on the surface of the object to be processed can be easily adjusted in the long side direction of the antenna by adjusting the thickness of each of the plurality of covering members, thereby allowing the object to be processed to be subjected to plasma processing with high accuracy.

[0117] According to a sixth aspect of the present disclosure, in the plasma processing apparatus of any one of the first to fifth aspects, the plasma resistance of the inner cover may be lower than the plasma resistance of the covering cover.

[0118] With the above structure, it is possible to easily construct an inner cover at a low cost, and further, it is possible to easily construct a plasma processing apparatus at a low cost.

[0119] The seventh embodiment of the present disclosure is a plasma processing device according to any one of the first to sixth embodiments, wherein the antenna has a straight line portion formed in a straight line shape, and a bent portion which is continuously arranged with the straight line portion and bent relative to the straight line portion, and the covering cover is arranged in a manner facing at least the bent portion.

[0120] According to the above structure, since the cover is disposed at least facing the bent portion, the plasma density in the region facing the bent portion in the processing chamber can be prevented from being unduly increased, thereby making it easy to perform high-precision plasma processing on the object to be processed.

[0121] The present disclosure is not limited to the above-described embodiments and modifications, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments and modifications are also included in the technical scope of the present disclosure.

[0122] Description of Figure Numbers

[0123] 1: Plasma treatment device

[0124] 2: Shell (processing chamber)

[0125] 2b: First opening (opening)

[0126] 3: Flange (spacer)

[0127] 4: Vacuum cover (outer cover)

[0128] 5, 15: Radome (inner cover)

[0129] 5a1 to 5a4, 15a1 to 15a4: Antenna housing member (dividing portion)

[0130] 8: Antenna

[0131] 8a: Straight line

[0132] 8b, 8d: Bending part

[0133] 14, 24: Cover

[0134] 16: Support table (spacer)

[0135] 18: Spacer member (spacer)

[0136] 33: Flange (spacer)

[0137] AK: Antenna accommodation space (enclosed space)

Claims

1. A plasma processing device, comprising: A shell, constituting a processing chamber and provided with an opening connecting the interior of the processing chamber with the outside; an outer cover, which is detachably mounted on the housing and blocks the opening; A rod-shaped antenna, disposed inside the processing chamber, for generating plasma; as well as The inner cover is arranged on the inner side of the outer cover and forms a surrounding space surrounding the antenna between the inner cover and the outer cover, and has dielectric properties. The inner cover is divided into a plurality of parts along the long side direction of the antenna. The plasma processing apparatus further includes a covering cover that is fixed to the outer cover or the inner cover, is provided to cover the divided portion of the inner cover, and has dielectric properties.

2. The plasma processing apparatus according to claim 1, wherein: The outer cover is mounted on the housing via a spacer.

3. The plasma processing apparatus according to claim 2, wherein: The spacer includes a support platform that detachably supports the outer cover.

4. The plasma processing apparatus according to any one of claims 1 to 3, wherein: The covering cover is provided so as to cover the entire inner cover.

5. The plasma processing apparatus according to claim 4, wherein: The cover includes a plurality of cover members divided along a longitudinal direction of the antenna.

6. The plasma processing apparatus according to claim 4, wherein: The plasma resistance of the inner cover is lower than the plasma resistance of the covering cover.

7. The plasma processing apparatus according to any one of claims 1 to 3, wherein: The antenna includes a linear portion formed in a linear shape, and a bent portion provided continuously with the linear portion and bent relative to the linear portion. The covering cover is provided so as to face at least the bent portion.

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