Process inflow system, process inflow control method and semiconductor process equipment

Abstract

The present disclosure relates to the field of semiconductor processing technologies, and provides a process inflow system, a process inflow control method, and a semiconductor process device. The process inflow system includes a pipeline system and a control unit. The pipeline system includes a first pipeline unit and a second pipeline unit; the first pipeline unit includes a first branch, a first output main pipeline, and a first preset pipeline; the second pipeline unit includes a second branch, a second output main pipeline, and a second preset pipeline; the control unit controls the pipeline system to alternately perform a pulsed inflow action of a first reaction fluid / a second reaction fluid on a reaction chamber, including: controlling the first / second branch to be in a pre-flow state; controlling the first / second branch to be in a pressurization state; controlling the pulsed output of the first / second reaction fluid; controlling the first / second branch to resume the pre-flow state. By precisely controlling the two pipeline units to alternately perform the inflow action of the first / second reaction fluid, a good processing effect is achieved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor processing technology, and in particular to a process inlet system, a process inlet control method and semiconductor process equipment. Background Art

[0002] In the semiconductor processing technology, when tungsten film deposition and filling of small-sized high aspect ratio holes (such as CD <0.2um, aspect ratio >7:1) is achieved, a pulsed nucleation process is required. Pulsed nucleation can greatly improve the hole filling ability of tungsten film deposition, and many advanced processes for chip processing will use pulsed nucleation tungsten to fill holes. Specifically, pulsed nucleation layer (PNL) is a processing technology used before tungsten deposition, mainly used in tungsten plug processes in semiconductor manufacturing. Pulsed nucleation tungsten technology forms a uniform tungsten nucleation layer by alternately introducing gases such as tungsten hexafluoride (WF6) and silane (SiH4) or diborane (B2H6) into the contact hole. This method can effectively avoid "gap" defects in the hole and improve the quality and reliability of tungsten deposition.

[0003] However, since the pulse gas intake of the two reaction gases needs to be alternately controlled, and other auxiliary gases need to be introduced during the actual process, how to accurately control the pulse gas intake has become a technical problem that needs to be solved in the industry. In addition, when designing the gas path system, how to prevent unnecessary reactions between the reaction gas and the auxiliary gas is also one of the problems that need to be solved. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present disclosure is to provide a process inlet system, a process inlet control method and a semiconductor process equipment to solve the problems in the related art.

[0005] The first aspect of the present disclosure provides a process inlet flow system, comprising: a pipeline system, including: a first pipeline unit and a second pipeline unit; the first pipeline unit includes a first branch, a first output main pipeline connected to the output end of the first branch, and a first preset pipeline; the second pipeline unit includes a second branch, a second output main pipeline connected to the output end of the second branch, and a second preset pipeline; the first output main pipeline and the second output main pipeline are connected to the reaction chamber inlet; the input ends of the first branch and the second branch are respectively fed with a first reaction fluid and a second reaction fluid for the reaction; the first branch is sequentially provided with a first mass flow controller and a first branch valve from the input end to the output end; the second branch is sequentially provided with a second mass flow controller and a second branch valve from the input end to the output end; the input end of the first preset pipeline is connected between the first mass flow controller and the first branch valve, and is provided with a first preset valve; the input end of the second preset pipeline is connected between the second mass flow controller and the second branch valve, and is provided with a second preset valve; a control unit for controlling the pipeline system to cyclically execute a preset process step; in the preset process step, a pulsed inlet flow action of the first reaction fluid / second reaction fluid on the reaction chamber is alternately executed between the first pipeline unit and the second pipeline unit, including: controlling the first / second preset valve to conduct and the first / second branch valve to close to make the first / second branch in a pre-flow state; controlling the first / second preset valve and the first / second branch valve to close to make the first / second branch in a pressurized state; keeping the first / second output main pipeline conducting, controlling the first / second branch valve to open to execute the pulsed output of the first / second reaction fluid; successively controlling the closing of the first / second branch valve and the opening of the first / second preset pipeline for purging and preparing for the next pulsed output.

[0006] In an embodiment of the first aspect, the first mass flow controller keeps venting before the pulsed output of the first reaction fluid is completed during the inlet flow action of the first reaction fluid, stops venting after the pulsed output of the first reaction fluid is completed, and resumes venting after the pulsed output of the second reaction fluid is completed; and / or, the second mass flow controller is configured to have an opposite venting state to that of the first mass controller.

[0007] In an embodiment of the first aspect, the first pipeline unit further includes: at least one first sub-branch, the output end of which is connected to the first output main pipeline in a converging manner with the output end of the first branch; the second pipeline unit further includes: at least one second sub-branch, the output end of which is connected to the second output main pipeline in a converging manner with the output end of the second branch; each of the first sub-branch and the second sub-branch is respectively provided with a first sub-branch valve and a second sub-branch valve.

[0008] In an embodiment of the first aspect, the inlets of at least one of the first sub-branches and at least one of the second sub-branches are used to input other fluids to be introduced into the reaction chamber; among them, other fluids that will react undesirably with the second reaction fluid and do not react with the first reaction fluid are transported through the first sub-branch, and other fluids that will react undesirably with the first reaction fluid and do not react with the second reaction fluid are transported through the second sub-branch.

[0009] In an embodiment of the first aspect, the inlet of one of the first sub-branches is used to input the carrier fluid of the first reaction fluid; the inlet of one of the second sub-branches is used to input the carrier fluid of the second reaction fluid.

[0010] In an embodiment of the first aspect, the process inlet flow system includes at least one of the following: 1) A third mass flow controller is provided in the first sub-branch before the valve of the first sub-branch; a fourth mass flow controller is provided in the second sub-branch before the valve of the second sub-branch; 2) In the inlet flow operation, each of the first sub-branch valves and the second sub-branch valves is in an open state; 3) A first main valve and a second main valve are respectively provided in the first output main line and the second output main line; among them, in the inlet flow operation, the first main valve and the second main valve are in an open state.

[0011] In an embodiment of the first aspect, the second reaction fluid includes tungsten fluoride gas as a precursor; the first reaction fluid includes a first reducing gas for reducing tungsten; other fluids in the first sub-branch that are commonly connected to the first output main line with the first branch include: a second reducing gas for reducing tungsten to form a deposit, and an inert gas as the carrier gas of the first reducing gas; other fluids in the second sub-branch that are commonly connected to the second output main line with the second branch include: a fluorine-containing cleaning gas, and an inert gas as the carrier gas of the tungsten fluoride gas.

[0012] The second aspect of the present disclosure provides a process inlet flow control method, which is applied to the process inlet flow system described in any item of the first aspect, and includes: cyclically executing a preset process step, including: performing an inlet flow action of a first reaction fluid, including: controlling a first preset valve to conduct and a first branch valve to close to make the first branch in a pre-flow state; controlling the first preset valve and the first branch valve to close to make the first branch in a pressurized state; keeping the first output main path conducting, controlling the first branch valve to open to perform a pulsed output of the first reaction fluid; successively controlling the closing of the first branch valve and the opening of the first preset pipeline for purging and preparing for the next pulsed output; performing an inlet flow action of a second reaction fluid, including: controlling a second preset valve to conduct and a second branch valve to close to make the second branch in a pre-flow state; controlling the second preset valve and the second branch valve to close to make the second branch in a pressurized state; keeping the second output main path conducting, controlling the second branch valve to open to perform a pulsed output of the second reaction fluid; successively controlling the closing of the second branch valve and the opening of the second preset pipeline for purging and preparing for the next pulsed output.

[0013] In an embodiment of the second aspect, the process inlet flow control method further includes: in the preset process step, controlling the first mass flow controller to keep venting before the pulsed output of the first reaction fluid in the inlet flow action of the first reaction fluid, and stopping venting after the pulsed output of the first reaction fluid until the pulsed output of the second reaction fluid is completed and then resuming venting; in the preset process step, controlling the second mass flow controller to keep venting before the pulsed output of the second reaction fluid in the inlet flow action of the second reaction fluid, and stopping venting after the pulsed output of the second reaction fluid until the pulsed output of the first reaction fluid is completed and then resuming venting.

[0014] In an embodiment of the second aspect, in the preset process step, keep the first sub-branch connecting to the first output main path and the second sub-branch connecting to the second output main path conducting, and maintain other fluids in the first sub-branch and the second sub-branch at their respective preset stable flow rates.

[0015] The third aspect of the present disclosure provides a semiconductor process equipment, including: a reaction chamber; the process inlet flow system described in any item of the first aspect.

[0016] As described above, the present disclosure relates to the field of semiconductor processing technologies, and provides a process inflow system, a process inflow control method, and a semiconductor processing apparatus. The process inflow system includes a pipeline system and a control unit. The pipeline system includes a first pipeline unit and a second pipeline unit. The first pipeline unit includes a first branch, a first output main pipeline, and a first preset pipeline. The second pipeline unit includes a second branch, a second output main pipeline, and a second preset pipeline. The control unit controls the pipeline system to alternately perform a pulsed inflow operation of a first reaction fluid / a second reaction fluid on a reaction chamber, including: controlling the first / second branch to be in a pre-flow state; controlling the first / second branch to be in a pressurized state; controlling the pulsed output of the first / second reaction fluid; and controlling the first / second branch to resume the pre-flow state. Thus, by precisely controlling the two pipeline units to alternately perform the inflow operation of "pre-flow - pressurization - pulsed output" of the first / second reaction fluid, a good pulsed nucleation effect is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram showing the structure of the pipeline system in the process inflow system in an embodiment of the present disclosure.

[0018] Figure 2 Schematic diagram showing the structure of the pipeline system in the process inflow system in another embodiment of the present disclosure.

[0019] Figure 3 Schematic diagram showing the communication connection structure between the control unit and the pipeline system in the process inflow system in an embodiment of the present disclosure.

[0020] Figure 4 Schematic timing diagram showing the control unit executing a preset process step in an embodiment of the present disclosure.

[0021] Figure 5 Schematic timing diagram showing the control unit executing a preset process step in another embodiment of the present disclosure.

[0022] Figure 6 Schematic flowchart showing the process inflow control method in an embodiment of the present disclosure.

[0023] Figure 7 Schematic diagram showing the structure of the semiconductor processing apparatus in an embodiment of the present disclosure.

[0024] Figure 8 Flowchart showing the semiconductor process flow to which the process inflow system in an embodiment of the present disclosure is applied.

[0025] Figure 9 Schematic module diagram showing the process inflow control device in an embodiment of the present disclosure.

[0026] Figure 10Shows a schematic structural diagram of a computer device in an embodiment of the present disclosure. Detailed implementation manners

[0027] The following uses specific specific examples to illustrate the implementation manners of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed in the present disclosure. The present disclosure can also be implemented or applied through different specific implementation manners. Various details in the present disclosure can also be modified or changed according to different viewpoints and application scenarios without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0028] The following takes the accompanying drawings as a reference and details the embodiments of the present disclosure so that those skilled in the technical field to which the present disclosure belongs can easily implement it. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0029] In the description of the present disclosure, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics represented in combination with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in a suitable manner in any one or at least one embodiment or example. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0030] In addition, the terms "first" and "second" are only used for the purpose of indication and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of such features. In the description of the present disclosure, the meaning of "at least one" is two or more unless otherwise specifically defined.

[0031] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar constituent elements throughout the specification are given the same reference signs.

[0032] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements placed therebetween. In addition, when it is said that a certain device "includes" a certain constituent element, unless there is a particularly contrary record, it does not exclude other constituent elements, but means that other constituent elements can also be included.

[0033] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context indicates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence or addition of one or at least one other feature, step, operation, element, module, item, kind, and / or group. The terms "or" and "and / or" used herein are interpreted as inclusive, or meaning any one or any combination. Thus, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A, B and C". An exception to this definition occurs only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0034] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statement does not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0035] Although not differently defined, including the technical terms and scientific terms used herein, all terms have the same meaning as generally understood by those skilled in the technical field to which the present disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with the relevant technical literature and the currently presented information, and shall not be over-interpreted as ideal or overly formulaic meanings as long as they are not defined.

[0036] In view of the problems in the related art, in the embodiments of the present disclosure, a process inlet flow system is provided, which solves the problems in the related art through the structural layout of the pipeline system and the corresponding intake control.

[0037] As Figure 1 shown, a schematic structural diagram of the pipeline system of the process inlet flow system in the embodiments of the present disclosure is presented.

[0038] In Figure 1 it, it is shown that the pipeline system 101 includes: a first pipeline unit 110 and a second pipeline unit 120.

[0039] The first pipeline unit 110 includes a first branch 111, a first output main line 112 connected to the output end of the first branch 111, and a first preset pipeline 113. The input end of the first branch 111 is for inputting a first reaction fluid. The output end of the first branch 111 is connected to one end of the first output main line 112. The other end of the first output main line 112 is connected to the inlet of the reaction chamber 103 of the process equipment. As an example, the process equipment may be a semiconductor process equipment, such as a plasma processing equipment, etc., and its reaction chamber 103 can be used for the input reaction fluid to be plasmaized into plasma to perform reaction processing on the semiconductor surface, such as deposition, etching, etc. The first branch 111 is sequentially provided with a first mass flow controller 1112 and a first branch valve 1111 from the input end to the output end. The first mass flow controller 1112 is used to control the flow rate of the first reaction fluid in the first branch 111, and the first branch valve 1111 is used to connect / disconnect the first branch 111 to / from the first output main line 112. Optionally, the first branch 111 may also be provided with a first control valve 1113 at the front stage of the first mass flow controller 1112, and the opening degree of the first control valve 1113 determines the flow rate of the first reaction fluid delivered from the fluid source of the first reaction fluid to the first mass flow controller 1112. The input end of the first preset pipeline 113 is connected between the first mass flow controller 1112 and the first branch valve 1111, and the other end can be communicated with the discharge pipeline 104 (such as connected to a vacuum pump), etc. A first preset valve 1131 is provided in the first preset pipeline 113 for controlling the connection, disconnection and opening degree of the first preset pipeline 113.

[0040] The second pipeline unit 120 includes a second branch 121, a second output main line 122 connected to the output end of the second branch 121, and a second preset pipeline 123. The input end of the second branch 121 is for inputting a second reaction fluid, and the first reaction fluid and the second reaction fluid are alternately and pulsewise introduced into the reaction chamber 103 and react in the reaction chamber 103. The output end of the second branch 121 is connected to one end of the second output main line 122. The other end of the second output main line 122 is connected to the inlet of the reaction chamber 103 of the process equipment. The second branch 121 is sequentially provided with a second mass flow controller 1212 and a second branch valve 1211 from the input end to the output end. The second mass flow controller 1212 is used to control the flow rate of the second reaction fluid in the second branch 121, and the second branch valve 1211 is used to connect / disconnect the second branch 121 to / from the second output main line 122. Optionally, the second branch 121 may also be provided with a second control valve 1213 in front of the second mass flow controller 1212, and the opening degree of the second control valve 1213 determines the flow rate of the second reaction fluid delivered from the fluid source of the second reaction fluid to the second mass flow controller 1212. The input end of the second preset pipeline 123 is connected between the second mass flow controller 1212 and the second branch valve 1211, and the other end can be communicated with the discharge pipeline 104 or the like. A second preset valve 1231 is provided in the second preset pipeline 123 for controlling the connection, disconnection and opening degree of the second preset pipeline 123. In some embodiments, the output ends of the first preset pipeline 113 and the second preset pipeline 123 can be connected to the same discharge pipeline 104, for example, both are connected to the discharge pipeline 104 for discharging the reaction products after reaction in the reaction chamber 103.

[0041] In some embodiments, a first main line valve 1121 for its connection / disconnection may be provided in the first output main line 112, and a second main line valve 1221 for its connection / disconnection may be provided in the second output main line 122. As an example, the first main line valve 1121 and the second main line valve 1221 may be in an open state during the process steps, and the on / off of the respective branches connected thereto are controlled by the valves in their respective branches.

[0042] In some embodiments, the first preset pipeline 113 is used to set different states of the first branch 111, such as a pressurized state for preparing the pulsed output of the first reaction fluid, and a pre-flow state with a preset pressure for the first branch 111 before the pressurized state and after the pulsed output. Specifically, when the first control valve 1113 in the first branch 111 is turned on to continuously introduce the first reaction fluid, at this time, the first preset valve 1131 is opened to make the first preset pipeline 113 conductive, while the first branch valve 1111 is closed, and the first reaction fluid continuously introduced into the first branch 111 will be output to the output end and maintained for a certain period of time, which will make the pressure in the first branch 111 tend to be stable and reach a stable preset pressure. Then, after closing the first preset valve 1131, the first reaction fluid in the first branch 111 increases but cannot be discharged, and is in a pressurized state of "holding its breath". Then, after opening and closing the first branch valve 1111 within a pulse duration, the first main pipeline remains conductive (such as the first main pipeline valve 1121 is opened), and a pulse of the first reaction fluid is output into the reaction chamber 103. After the pulsed output is completed, the first branch valve 1111 is closed first, and then the first preset valve 1131 is opened (if the first preset valve 1131 is opened first, it will cause the reaction chamber 103 to be connected to the drainage pipeline through the first preset pipeline 113, resulting in backflow), and the pre-flow state is restored. Optionally, at this time, the first branch 111 can be purged with purge gas. It should be noted that since the pressure of the discharge pipeline 104 may be lower than that of the reaction chamber 103, the first branch valve and the first preset valve 1131 will be interlocked in opposite opening and closing states to avoid the adverse result of the reaction chamber 103 backflowing fluid to the conductive first preset pipeline 113 and the discharge pipeline 104 through the conductive first branch 111.

[0043] Since the pressurization state starts to increase the pressure from the preset pressure, the initial pressure remains a stable pressure at the beginning of pressurization. Therefore, the pressure reached during pressurization is only controlled by the pressurization time and the flow rate of the first reaction fluid. Since the pressurization time and the flow rate of the first reaction fluid are controllable, the pressure reached during pressurization is controllable. Thus, it is possible to ensure that the pulse output amounts of the first reaction fluid in each execution are stably similar. On the contrary, if the first preset pipeline 113 is not provided, it is difficult to ensure the stability of the pressure at the beginning of each pressurization and the pressure reached during pressurization, resulting in a large difference in the pulse output amounts in different times, which affects the process quality. Moreover, if the first preset pipeline 113 is not provided, the pre-flow state is not available and the pressurization state is directly entered. The first mass flow controller 1112 (MFC) can determine the output flow rate based on the pressure difference between the input and output ends. Being in the pressurization state for a long time before the pulse output will cause the pressure difference at both ends of the MFC to disappear, resulting in no first reaction fluid flowing out at the output end of the MFC. Therefore, when the pulse output is performed, problems such as unstable output or insufficient output amount will occur due to no fluid flowing out from the MFC. Therefore, by providing the first preset pipeline 113, the stability of the pulse output of the first reaction fluid can be effectively guaranteed.

[0044] It can be understood that, when the flow rate is stable under the pressurization state controlled by the first mass flow controller 1112, the gas volume of the pulse output is determined by the "holding breath" pulse duration. As an example, the pulse duration can be between a few tenths of a second and several seconds, such as between 0.1 s and 2 s, etc. Selecting an appropriate pulse duration can achieve a pulse output with the desired output amount.

[0045] In some embodiments, the second preset pipeline 123 is used to set different states of the second branch 121, such as a pressurized state for preparing the pulsed output of the second reaction fluid, a pre-flow state with a preset pressure for the second branch 121 before the pressurized state and after the pulsed output. Specifically, when the second control valve 1213 in the second branch 121 is opened to continuously introduce the second reaction fluid, at this time, the second preset valve 1231 is opened to make the second preset pipeline 123 conduct, and the second branch valve 1211 is closed, the second reaction fluid continuously introduced in the second branch 121 will be output to the output end and maintained for a certain time, which will make the pressure in the second branch 121 tend to be stable and reach a stable preset pressure. Then, after closing the second preset valve 1231, the second reaction fluid in the second branch 121 increases but cannot be discharged, and is in a pressurized state of "holding its breath". Then, after opening and closing the second branch valve 1211 within a pulse duration, the second main pipeline remains conductive (such as the second main pipeline valve 1221 is opened), and a pulse output of the second reaction fluid is formed into the reaction chamber 103. After the pulsed output is completed, the second branch valve 1211 is closed first, and the second preset valve 1231 is opened later (if the second preset valve 1231 is opened first, it will cause the reaction chamber 103 to be connected to the discharge pipeline through the second preset pipeline 123, resulting in backflow), and the pre-flow state is restored. Optionally, at this time, the second branch 121 can be purged with purge gas. It should be noted that since the pressure of the discharge pipeline 104 may be lower than that of the reaction chamber 103, the second branch valve and the second preset valve 1231 will be interlocked in opposite opening and closing states to avoid the adverse result of the reaction chamber 103 backflowing fluid to the conductive second preset pipeline 123 and the discharge pipeline 104 through the conductive second branch 121.

[0046] Since the pressurization state starts to increase the pressure from the preset pressure, the initial pressure remains a stable pressure when the pressurization begins. Thus, the pressure reached during pressurization is controlled only by the pressurization time and the flow rate of the second reaction fluid. Since the pressurization time and the flow rate of the second reaction fluid are controllable, the pressure reached during pressurization is controllable. As a result, it can be ensured that the pulse output amounts of the second reaction fluid in each execution are stably similar. On the contrary, if the second preset pipeline 123 is not provided, it is difficult to ensure the stability of the pressure at the start of pressurization and the pressure reached during pressurization, resulting in a large difference in the pulse output amounts in different times, which affects the process quality. Moreover, if the second preset pipeline 123 is not provided, there is no pre-flow state and it directly enters the pressurization state. The second mass flow controller 1212 (MFC) can determine the output flow rate based on the pressure difference between the input and output ends. Being in the pressurization state for a long time before the pulse output will cause the pressure difference at both ends of the MFC to disappear, resulting in no second reaction fluid flowing out at the output end of the MFC. Then, when the pulse output is carried out, due to no outflow from the MFC, problems such as unstable output or insufficient output amount will occur. Therefore, by setting the second preset pipeline 123, the stability of the pulse output of the second reaction fluid can be effectively guaranteed.

[0047] It can be understood that, when the flow rate during pressurization is stabilized by the second mass flow controller 1212, the gas volume of the pulse output is determined by the "holding breath" pulse duration. As an example, the pulse duration can be between a few tenths of a second and several seconds, such as between 0.1 s and 2 s, etc. Selecting an appropriate pulse duration can achieve a pulse output with the desired output amount.

[0048] In a specific process flow, in addition to the first reaction fluid and the second reaction fluid, it is also possible to add some other fluids. For example, the carrier fluids of the first reaction fluid and the second reaction fluid, as well as the fluids required to be added for other reactions in the deposition / etching process. For example, the "fluid" can be exemplified as a gas. Taking pulsed nucleation tungsten as an example, the second reaction fluid includes tungsten fluoride gas as a precursor, such as tungsten hexafluoride (WF6). The first reaction fluid includes a first reducing gas for reducing tungsten, such as silane (SiH4), or silane can also be replaced by other hydrogen-containing reducing agents, such as diborane (B2H6), etc. The reaction formula between them is WF6 + SiH4 → W + SiF4 + HF, thereby reducing and forming a nucleation layer of tungsten. In some embodiments, the other fluids that can be added may further include a second reducing gas for reducing tungsten, such as hydrogen gas H2, WF6 + H2 → W + HF, which can be used to form a large amount of tungsten deposition after the tungsten nucleation layer. Additionally, in some embodiments, the other fluids may further include a carrier gas for the first reducing gas and a carrier gas for the second reaction fluid (i.e., such as tungsten hexafluoride). The carrier gas can be an inert gas, such as argon (Ar), etc. In some embodiments, the other fluids may further contain a cleaning gas for removing excess tungsten deposition in the reaction chamber 103, such as NF3, etc.

[0049] To transport these auxiliary gases, reference can be made to Figure 2As shown, the first pipeline unit 110 further includes at least one first sub-branch 114, and the output end of the first sub-branch 114 is connected to the first output main line 112 in a manner that converges with the output end of the first branch 111. The second pipeline unit 120 includes at least one second sub-branch 124, and the output end of the second sub-branch 124 is connected to the second output main line 122 in a manner that converges with the output end of the second branch 121. Each of the first sub-branch 114 and the second sub-branch 124 is respectively provided with a first sub-branch valve 1141 and a second sub-branch valve 1241. Further, to avoid undesired reactions between other fluids in the sub-branches belonging to the same pipeline unit, other fluids that will react undesirably with the second reaction fluid and do not react with the first reaction fluid can be conveyed through the first sub-branch 114, and other fluids that will react undesirably with the first reaction fluid and do not react with the second reaction fluid can be conveyed through the second sub-branch 124. For example, if the first reaction fluid is SiH4, the second reaction fluid is WF6, and other fluids include H2 and NF3, if WF6 and H2 are in parallel branches, an undesired in-pipeline reaction between WF6 and H2 will occur when both branches are open, or if SiH4 and NF3 are in parallel branches, an undesired in-pipeline reaction between SiH4 and NF3 may occur when both branches are open. Therefore, when the first reaction fluid is transmitted through the first branch 111, H2 that will not react with it (including the same H element) can be transmitted in one of the first sub-branches 114. And when the second reaction fluid is transmitted through the second branch 121, NF3 that will not react with it (including the same F element) can be transmitted in one of the second sub-branches 124.

[0050] Again, Figure 2 As shown, other fluids may also include the carrier fluids of the first reaction fluid and the second reaction fluid. Then, the carrier fluid of the first reaction fluid can be transmitted through a first sub-branch 114, and the carrier fluid of the second reaction fluid can be transmitted through the second sub-branch 124. The carrier fluid may include an inert gas such as argon as the carrier gas.

[0051] In some embodiments, each first sub-branch 114 may be sequentially provided with a third mass flow controller 1142 and a first sub-branch valve 1141 from the input end to the output end. Optionally, a third control valve 1143 may also be provided at the front stage of the third mass flow controller 1142. Each second sub-branch 124 may be sequentially provided with a fourth mass flow controller 1242 and a second sub-branch valve 1241 from the input end to the output end. Optionally, a fourth control valve 1243 may also be provided at the front stage of the fourth mass flow controller 1242. In the process steps, the first sub-branch 114 and the second sub-branch 124 can be opened / closed according to process requirements.

[0052] The process influent system further includes a control unit 102, which is communicatively connected to each controllable pipeline element (such as valves, mass flow controllers, etc.) in the pipeline system 101 to perform control according to process requirements. The control unit 102 may include one or more communicatively connected controllers.

[0053] As Figure 3 shown, a schematic diagram of the communication connection structure between the control unit 102 and the pipeline system 101 in the process influent system in an embodiment of the present disclosure is presented.

[0054] In Figure 3 it, the control unit 102 is shown to be communicatively connected to and control a first control valve 1113, a first branch valve 1111, a first mass flow controller 1112, a first preset valve 1131, a third control valve 1143, a third mass flow controller 1142, a first sub-branch valve 1141, a first main pipeline valve 1121; and, communicatively connected to and control a second control valve 1213, a second branch valve 1211, a second mass flow controller 1212, a second preset valve 1231, a fourth control valve 1243, a fourth mass flow controller 1242, a second sub-branch valve 1241, a second main pipeline valve 1221.

[0055] The control unit 102 can control the above pipeline elements to change states according to the required time sequence to cyclically execute preset process steps.

[0056] In the preset process steps, a pulsed influent action of the first reaction fluid / second reaction fluid on the reaction chamber 103 is alternately performed between the first pipeline unit 110 and the second pipeline unit 120.

[0057] The first influent action of the first pipeline unit 110 includes: controlling the first preset valve 1131 to conduct and the first branch valve 1111 to close so that the first branch 111 is in a pre-flow state; controlling the first preset valve 1131 and the first branch valve 1111 to close so that the first branch 111 is in a pressurized state; keeping the first output main pipeline 112 conducting, controlling the first branch valve 1111 to open to perform the pulsed output of the first reaction fluid; successively controlling the closing of the first branch valve 1111 and the opening of the first preset pipeline 113 for purging and preparing for the next pulsed output.

[0058] The second inflow operation of the second pipeline unit 120 includes: controlling the second preset valve 1231 to conduct and the second branch valve 1211 to close so that the second branch 121 is in a pre-flow state; controlling the second preset valve 1231 and the second branch valve 1211 to close so that the second branch 121 is in a pressurized state; keeping the second output main line 122 conducting, controlling the second branch valve 1211 to open to perform the pulsed output of the second reaction fluid; successively controlling the second branch valve 1211 to close and the second preset pipeline 123 to open for purging and preparing for the next pulsed output.

[0059] Since the preset process steps are executed cyclically, and the two inflow operations in each preset process step are executed alternately, the cyclic alternation of the first inflow operation and the second inflow operation is completed, that is, the execution process is "preset process step (first inflow operation → second inflow operation) → preset process step (first inflow operation → second inflow operation)....". It can be understood that the number of cycles can be determined according to actual needs.

[0060] Optionally, after completing one cycle, the flow rates of each pipeline can be emptied to zero for the next cycle.

[0061] As Figure 4 shown, a timing diagram of the control unit 102 executing the preset process steps in an embodiment of the present disclosure is shown.

[0062] In this timing diagram, the execution process of a preset process step executed cyclically is exemplarily shown. In this embodiment, the preset process step is implemented as a process step of pulsed nucleation tungsten.

[0063] The preset process step includes multiple stages in chronological order: initial pre-flow stage → SiH4 charging stage → SiH4 pulsed stage → SiH4 purging stage → WF6 charging stage → WF6 pulsed stage → WF6 purging stage, and is executed cyclically. After one cycle, the pipeline flow rate can be cleared to zero for the initial pre-flow stage of the next cycle.

[0064] In the preset process step of this embodiment, the first main line valve 1121 and the second main line valve 1221 can be kept open. Also, each first sub-branch valve 1141 is opened, and the mass flow controllers can be kept at a stable set flow rate before the pipeline flow rate is cleared to zero. It should be noted that the set flow rate is only the desired flow rate set for the MFC, and does not mean the actual flow rate. The actual flow rate of the mass flow controller is obtained based on the sensing signal of its sensor, that is, "feedback". It can be seen that the SiH4 set flow rate is kept at X sccm, the H2 set flow rate is kept at A sccm, the Ar carrier gas set flow rate of SiH4 is kept at B sccm, the WH6 set flow rate is kept at Y sccm, and the Ar carrier gas set flow rate of WH6 is kept at C sccm.

[0065] In the initial pre-flow stage, the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is closed and the second preset valve 1231 is opened; so that the first branch 111 and the second branch 121 reach the pre-flow state.

[0066] In the SiH4 gas charging stage, the first branch valve 1111 is closed and the first preset valve 1131 is closed; the second branch valve 1211 is closed and the second preset valve 1231 is opened; so that the first branch 111 is in a pressurized state;

[0067] In the SiH4 pulse stage, the first branch valve 1111 is opened to maintain the pulse duration and the first preset valve 1131 is closed; the second branch valve 1211 is closed and the second preset valve 1231 is opened; so that the first branch 111 pulses and outputs the first reaction fluid to the reaction chamber 103;

[0068] In the SiH4 purge stage, the first branch valve 1111 is first closed and the first preset valve 1131 is then opened; the second branch valve 1211 is closed and the second preset valve 1231 is opened; to purge the first branch 111.

[0069] In the WF6 gas charging stage, the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is closed and the second preset valve 1231 is closed; so that the second branch 121 is in a pressurized state;

[0070] In the WF6 pulse stage, the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is opened to maintain the pulse duration and the second preset valve 1231 is closed; so that the second branch 121 pulses and outputs the second reaction fluid to the reaction chamber 103;

[0071] In the WF6 purge stage, the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is closed and the second preset valve 1231 is opened; to purge the second branch 121.

[0072] After that, the flow clearing stage may be included after a single cycle. The flow rates of each mass flow controller (including the first mass flow controller 1112, the second mass flow controller 1212, the third mass flow controller 1142, and the fourth mass flow controller 1242) are reset to zero, that is, the set flow rate of SiH4 is 0 sccm, the set flow rate of H2 is 0 sccm, the set flow rate of the Ar carrier gas for SiH4 is 0 sccm, the set flow rate of WH6 is 0 sccm, and the set flow rate of the Ar carrier gas for WH6 is 0 sccm; the first branch valve 1111 is closed and the first preset valve 1131 is opened; the second branch valve 1211 is closed and the second preset valve 1231 is opened.

[0073] As shown Figure 5 in the timing diagram of the control unit 102 executing a preset process step in another embodiment of the present disclosure.

[0074] Compared with Figure 4 the embodiment, in the preset process step of this embodiment, the flow rates of the first mass flow controller 1112 and the second mass flow controller 1212 are controlled. In the inflow operation of the first reaction fluid, the flow rate of the second reaction fluid can be maintained at zero in some stages; and in the inflow operation of the second reaction fluid, the flow rate of the first reaction fluid can be maintained at zero in some stages. Thus, the consumption of the first reaction fluid and the second reaction fluid can be saved in each preset process step, and the total cumulative savings in consumption in the process of cycling through the preset process steps multiple times is huge, which can effectively optimize the process cost.

[0075] Similar to the previous embodiment, the preset process step includes multiple stages in chronological order: initial pre-flow stage → SiH4 filling stage → SiH4 pulse stage → SiH4 purge stage → WF6 filling stage → WF6 pulse stage → WF6 purge stage, which are executed in a cycle. After one cycle, the pipeline flow rate can be cleared to await the initial pre-flow stage of the next cycle.

[0076] Specifically, the principle of controlling the flow rates of the first mass flow controller and the second mass flow controller 1212 to save the consumption of the first reaction fluid and the second reaction fluid is described. To save the consumption of the first reaction fluid, the first mass flow controller 1112 keeps venting before the pulse output of the first reaction fluid is completed during the inflow operation of the first reaction fluid, stops venting after the pulse output of the first reaction fluid is completed, and resumes venting after the pulse output of the second reaction fluid is completed. To save the consumption of the second reaction fluid, the second mass flow controller 1212 is configured to have an opposite venting state to that of the first mass controller. That is, the second mass flow controller 1212 keeps venting before the pulse output of the second reaction fluid is completed during the inflow operation of the second reaction fluid, stops venting after the pulse output of the second reaction fluid is completed, and resumes venting after the pulse output of the first reaction fluid is completed. Figure 4 Exemplarily, the set flow rates of the first reaction fluid (exemplified as SiH4) and the second reaction fluid (exemplified as WF6) at different stages are given.

[0077] In the preset process steps of this embodiment, the first main path valve 1121 and the second main path valve 1221 can be kept open. Also, each first sub-branch valve 1141 is opened, and before the pipeline flow rate is cleared to zero, each mass flow controller except the first mass flow controller 1112 and the second mass flow controller 1212 can be kept with a stable flow rate output. It can be seen that the set flow rate of H2 is maintained at A sccm, the set flow rate of the Ar carrier gas of SiH4 is at B sccm, and the set flow rate of the Ar carrier gas of WH6 is at C sccm.

[0078] In the initial pre-flow stage, the first branch valve 1111 is closed, and the first preset valve 1131 is opened; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; so that the first branch 111 and the second branch 121 reach the pre-flow state. In this stage, the flow rate of SiH4 is X sccm, and the flow rate of WF6 is 0 sccm.

[0079] In the SiH4 gas charging stage, the first branch valve 1111 is closed, and the first preset valve 1131 is closed; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; so that the first branch 111 is in a pressurized state; in this stage, the flow rate of SiH4 is maintained at X sccm, and the flow rate of WF6 is maintained at 0 sccm.

[0080] In the SiH4 pulse stage, the first branch valve 1111 is opened to maintain the pulse duration, and the first preset valve 1131 is closed; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; so that the first branch 111 pulse outputs the first reaction fluid to the reaction chamber 103; in this stage, the flow rate of SiH4 is maintained at X sccm, and the flow rate of WF6 is maintained at 0 sccm.

[0081] In the SiH4 purge stage, the first branch valve 1111 is first closed, and then the first preset valve 1131 is opened; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; the first branch 111 is purged. In this stage, the flow rate change of SiH4 is 0 sccm, and the flow rate change of WF6 is Y sccm, to make pre-flow preparations for the subsequent WF6 gas charging.

[0082] In the WF6 gas charging stage, the first branch valve 1111 is closed, and the first preset valve 1131 is opened; the second branch valve 1211 is closed, and the second preset valve 1231 is closed; so that the second branch 121 is in a pressurized state; in this stage, the flow rate of SiH4 is maintained at 0 sccm, and the flow rate of WF6 is maintained at Y sccm.

[0083] During the WF6 pulse stage, the first branch valve 1111 is closed, and the first preset valve 1131 is opened; the second branch valve 1211 is opened to maintain the pulse duration, and the second preset valve 1231 is closed; the second branch 121 pulses to output the second reaction fluid to the reaction chamber 103; during this stage, the SiH4 flow rate remains at 0 sccm, and the WF6 flow rate remains at Y sccm.

[0084] During the WF6 purge stage, the first branch valve 1111 is closed, and the first preset valve 1131 is opened; the second branch valve 1211 is closed, and the second preset valve 1231 is opened; the second branch 121 is purged. During this stage, the SiH4 flow rate remains at 0 sccm, and the WF6 flow rate remains at 0 sccm.

[0085] After that, after a single cycle, it may include a flow rate clearing stage, and the flow rates of each mass flow controller (including the first mass flow controller 1112, the second mass flow controller 1212, the third mass flow controller 1142, and the fourth mass flow controller 1242) are reset to zero; the first branch valve 1111 is closed, and the first preset valve 1131 is opened; the second branch valve 1211 is closed, and the second preset valve 1231 is opened.

[0086] Based on Figure 5 As can be seen from the embodiments, in a round of preset process steps, SiH4 and WF6 do not have to consume flow rates in multiple stages respectively, thereby effectively reducing the consumption of SiH4 and WF6 and saving costs.

[0087] As Figure 6 shown, a schematic flowchart of a process inflow control method in an embodiment of the present disclosure is presented. The process inflow control method is applied to the process inflow system in the embodiments of the present disclosure and can be executed by the control unit 102 in the process inflow system. It should be noted that the implementation and principle of the method flow in this embodiment can refer to the previous embodiments of the process inflow system and will not be repeated here.

[0088] In Figure 6 it, the process inflow control method includes: a preset process step that is executed cyclically, and the preset process step includes:

[0089] Step S601: Perform the inflow action of the first reaction fluid, including: controlling the first preset valve 1131 to conduct and the first branch valve 1111 to close to make the first branch 111 in a pre-flow state; controlling the first preset valve 1131 and the first branch valve 1111 to close to make the first branch 111 in a pressurized state; keeping the first output main line 112 conducting, controlling the first branch valve 1111 to open to perform the pulse output of the first reaction fluid; successively controlling the closing of the first branch valve 1111 and the opening of the first preset pipeline 113 for purging and preparing for the next pulse output;

[0090] Step S602: Perform the inflow action of the second reaction fluid, including: controlling the second preset valve 1231 to conduct and the second branch valve 1211 to close to make the second branch 121 in a pre-flow state; controlling the second preset valve 1231 and the second branch valve 1211 to close to make the second branch 121 in a pressurized state; keeping the second output main line 122 conducting, controlling the second branch valve 1211 to open to perform the pulsed output of the second reaction fluid; successively controlling the closing of the second branch valve 1211 and the opening of the second preset pipeline 123 for purging and preparing for the next pulsed output.

[0091] Wherein, after step S602, a flow rate clearing stage may further be included, and then the cycles of S601 and S602 are carried out.

[0092] In some embodiments, the process inflow control method further includes: in a preset process step, controlling the first mass flow controller 1112 to keep venting before the pulsed output in the inflow action of the first reaction fluid is completed, and stopping venting after the pulsed output of the first reaction fluid is completed until venting resumes after the pulsed output of the second reaction fluid is completed. In a preset process step, controlling the second mass flow controller 1212 to keep venting before the pulsed output in the inflow action of the second reaction fluid is completed, and stopping venting after the pulsed output of the second reaction fluid is completed until venting resumes after the pulsed output of the first reaction fluid is completed. Reference may be made to Figure 5 the embodiment. By controlling the output flow rates of the first mass flow controller 1112 and the second mass flow controller 1212 through the above steps, it can be ensured that there is no need for flow output in some stages of the inflow actions of the first reaction fluid and the second reaction fluid, thereby effectively reducing the consumption of the first reaction fluid and the second reaction fluid and reducing costs.

[0093] In the embodiments of the second aspect, in the preset process step, keep the first sub-branch 114 connecting to the first output main line 112 and the second sub-branch 124 connecting to the second output main line 122 conducting, and maintain other fluids in the first sub-branch 114 and the second sub-branch 124 at their respective preset stable flow rates. Reference may be made to Figure 4 and Figure 5 the embodiment. Other fluids in the first sub-branch 114 and the second sub-branch 124, such as H2, NF3, carrier gas Ar, etc., can be kept at a stable output through the third mass flow controller 1142 and the fourth mass flow controller 1242 in the respective sub-branches.

[0094] As Figure 7 shown, a schematic structural diagram of a semiconductor process equipment in an embodiment of the present disclosure is presented.

[0095] The semiconductor process equipment includes a reaction chamber 103 and the process inflow system in any of the previous embodiments.

[0096] Specifically, a stage 105 for loading wafers, such as a hot stage, an electrostatic chuck, etc., can be provided at the bottom inside the reaction chamber 103. An air inlet part 106 is formed at the top (or other positions) of the reaction chamber 103 for air intake. Optionally, a shower head 107 facing the stage can be connected to the air inlet part for spraying the intake air. An exhaust port can be formed at the bottom of the reaction chamber 103 outside the stage, and the pipeline is connected to an exhaust pipeline 104, and the exhaust pipeline 104 can be connected to a vacuum pump for extracting the reaction products. Among them, an exhaust valve 108 can also be provided in the pipeline from the exhaust port of the reaction chamber 103 to the exhaust pipeline 104. It should be noted that for the sake of simplifying the structure, some components are omitted, such as the plasma component for plasmaizing the gas in the reaction chamber 103, such as an induction coil for applying a radio frequency voltage, etc.

[0097] The process inflow system includes a pipeline system 101. The first branch 111 and the second branch 121 in the first pipeline unit 110 of the pipeline system 101 can be connected to the air inlet part 106 of the reaction chamber 103. In some embodiments, the air inlet part can be one or more air inlets. In other embodiments, the air inlet part 106 can include a mixer for preliminarily mixing the incoming first reaction fluid and second reaction fluid and then inputting them into the reaction chamber 103 to accelerate the reaction. The process inflow system includes a control unit 102, which is communicatively connected to each pipeline element in the pipeline system 101 for executing, for example, Figure 6 the method flow in Figure 4 and Figure 5 realizing the timing process of preset process steps such as

[0098] In this embodiment, it is exemplarily shown that other fluids can include a second reducing fluid for reducing tungsten transmitted in a first sub-branch 114, such as hydrogen H2, WF6 + H2 → W + HF, which can be used to form a large block of tungsten deposition after the tungsten nucleation layer. Additionally, in some embodiments, other fluids can also include a carrier fluid as the first reducing fluid transmitted in another first sub-branch 114, and a carrier fluid for a deposition reaction fluid (i.e., tungsten hexafluoride) transmitted in a second sub-branch 124. Taking gas as an example, the carrier fluid can be an inert gas, such as argon (Ar), etc. In some embodiments, the other fluids can also include a cleaning fluid transmitted in another second sub-branch 124, such as NF3 gas, etc., which can be used to react with tungsten to remove excess tungsten.

[0099] Such as Figure 8As shown, it is a flowchart showing the semiconductor process flow applied in the process inflow system in an embodiment of the present disclosure. As an example, the semiconductor process flow in this embodiment can be the filling of tungsten into contact holes.

[0100] Figure 8 The process in it includes:

[0101] Step S801: Deposit a barrier / adhesion layer.

[0102] In some alternative examples, in step S802, an adhesion / barrier layer containing Ti and TiN can be grown on the pre-treated surface by PVD or CVD methods, which can prevent tungsten from peeling off and also prevent the erosion of WF6 on the underlying silicon.

[0103] Step S802: Deposit tungsten.

[0104] Specifically, heating can be carried out first and then soaked with SiH4, which will decompose to form Si and H2. Then tungsten nucleation is carried out. Through the timing in the previous embodiments (such as Figure 4 , Figure 5 ), SiH4 and WF6 are alternately pulsed in, forming a tungsten nucleation layer. Further, through the reaction of H2 and WF6, a large amount of tungsten deposition is formed. As an example, the deposition method used is low-pressure chemical vapor deposition (LP-CVD).

[0105] Optionally, in subsequent steps, the excess tungsten can be removed through physical / chemical process steps. Optionally, before the deposition process, the surface of the wafer can also be pre-treated first.

[0106] In addition, briefly introduce the process principle of CVD thin film deposition in the reaction chamber 103. First, the reaction gas enters the reaction chamber 103 through the showerhead 107, and the reaction gas passes through the pre-convection layer. Then, the film precursor reacts, and the gas molecules diffuse and are adsorbed onto the wafer surface substrate. The adsorbed precursor diffuses towards the substrate in the film growth region. A chemical reaction occurs on the high-temperature surface, resulting in film deposition and the generation of by-products. The by-products of the reaction remain on the wafer surface. The by-products in the gas state are desorbed from the wafer surface and diffuse into the boundary layer. The by-products are evacuated from the reaction chamber 103 by vacuum.

[0107] As Figure 9 shown, it is a schematic diagram of the modules of the process inflow control device in an embodiment of the present disclosure. It should be noted that the principle and technical implementation of the process inflow control device can refer to the process inflow control method in the previous embodiments, so it will not be repeated in this embodiment.

[0108] In Figure 9 , the process inflow control device 900 includes:

[0109] The process execution module 901 is used to cyclically execute preset process steps, including:

[0110] The first action execution module 911 is used to execute the inflow action of the first reaction fluid, including: controlling the first preset valve to conduct and the first branch valve to close to make the first branch in a pre-flow state; controlling the first preset valve and the first branch valve to close to make the first branch in a pressurized state; keeping the first output main line conducting, controlling the first branch valve to open to execute the pulsed output of the first reaction fluid; successively controlling the closing of the first branch valve and the opening of the first preset pipeline for purging and preparing for the next pulsed output;

[0111] The second action execution module 912 executes the inflow action of the second reaction fluid, including: controlling the second preset valve to conduct and the second branch valve to close to make the second branch in a pre-flow state; controlling the second preset valve and the second branch valve to close to make the second branch in a pressurized state; keeping the second output main line conducting, controlling the second branch valve to open to execute the pulsed output of the second reaction fluid; successively controlling the closing of the second branch valve and the opening of the second preset pipeline for purging and preparing for the next pulsed output.

[0112] It should be noted specifically that Figure 9 Each functional module in the embodiment can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program or instruction product. The computer program or instruction product includes one or at least one computer program or instruction. When the computer program or instruction is loaded and executed on a computer, the processes or functions according to the present disclosure are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer program or instruction can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium.

[0113] And Figure 9 The device disclosed in the embodiment can be implemented by other module division methods. The device embodiments shown above are only illustrative. For example, the division of the modules is only a logical function division. In actual implementation, there can be other division methods. For example, at least one module or module can be combined or can be dynamically transferred to another system, or some features can be ignored or not executed. Another point is that the couplings or direct couplings or communication connections shown or discussed with each other can be through some interfaces, and the indirect couplings or communication connections of the devices or modules can be in electrical or other forms.

[0114] In addition Figure 9Each functional module and sub-module in the embodiments can be dynamically located in a processing component, or each module can exist physically alone, or two or more modules can be dynamically located in a component. The above-mentioned dynamic component can be implemented in the form of hardware or in the form of a software functional module. When the above-mentioned dynamic component is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. The storage medium can be a read-only memory, a magnetic disk, an optical disk, etc.

[0115] It should be specifically noted that the flowcharts of the above embodiments of the present disclosure represent that the processes or methods can be understood as representing modules, segments or parts of code of executable instructions including one or more steps configured to implement specific logical functions or processes. And the scope of the preferred embodiments of the present disclosure includes additional implementations, in which functions can be executed in a substantially simultaneous manner or in a reverse order according to the functions involved, rather than in the order shown or discussed.

[0116] For example, Figure 6 the order of each step in method embodiments such as etc. may be changed in a specific scenario and is not limited to the above representation.

[0117] As Figure 10 shown, a schematic structural diagram of a computer device in an embodiment of the present disclosure is shown.

[0118] The computer device 1000 can be used to implement the control unit. The computer device 1000 includes a bus 1001, a processor 1002, and a memory 1003. Communication can be carried out between the processor 1002 and the memory 1003 through the bus 1001. Computer programs or instructions can be stored in the memory 1003. The processor 1002 implements the method flow or function in the previous embodiments by running the computer programs or instructions in the memory 1003, for example Figure 6 .

[0119] The bus 1001 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of convenience of representation, although only a thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0120] In some embodiments, the processor 1002 may be implemented as a Central Processing Unit (CPU), a Microcontroller Unit (MCU), a System On Chip, or a Field Programmable Gate Array (FPGA), etc. The memory 1003 may include volatile memory for temporarily storing data when running a program, such as Random Access Memory (RAM).

[0121] The memory 1003 may further include non-volatile memory for data storage, such as Read-Only Memory (ROM), flash memory, a Hard Disk Drive (HDD), or a Solid-State Disk (SSD).

[0122] In some embodiments, the computer device 1000 may further include a communicator 1004. The communicator 1004 is used for external communication. In a specific example, the communicator 1004 may include one or at least one wired and / or wireless communication circuit module. For example, the communicator 1004 may include one or more of a wired network card, a USB module, a serial interface module, etc. The wireless communication protocols followed by the wireless communication module include, for example, Near Field Communication (NFC) technology, Infrared (IR) technology, Global System for Mobile communications (GSM), General Packet Radio Service (GPRS), Code Division Multiple Access (CDMA), Wideband Code Division Multiple Access (WCDMA), Time-Division Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Bluetooth (BT), Global Navigation Satellite System (GNSS), etc.

[0123] In an embodiment of the present disclosure, a computer-readable storage medium may also be provided, storing a computer program or instructions, and when the computer program or instructions are run, the method flow or function in any previous embodiment is implemented. For example Figure 6 .

[0124] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code that is originally stored in a remote recording medium or a non-transitory machine-readable medium and will be stored in a local recording medium and downloaded through a network. Thus, the method represented herein can be stored on such a software process on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA).

[0125] In an embodiment of the present disclosure, a computer program product may also be provided, including one or more computer programs or instructions, and when the one or more computer programs or instructions are run, the process or function in the embodiment of the present disclosure is fully or partially executed. For example Figure 6 . The computer program product includes one or more computer programs or instructions.

[0126] The computer program or instructions can be stored in a readable storage medium, or transmitted from one readable storage medium to another readable storage medium. For example, the computer program or instructions can be transmitted from a website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless manner. The readable storage medium can be any available medium that can be accessed, or a data storage device such as a server or data center integrating one or more available mediums. The available medium can be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; it can also be an optical medium, such as a digital video disc; or it can be a semiconductor medium, such as a solid-state drive. The computer-readable storage medium can be a volatile or non-volatile storage medium, or can include both volatile and non-volatile types of storage media.

[0127] In summary, the present disclosure relates to the field of semiconductor processing technologies, and provides a process inflow system, a process inflow control method, and a semiconductor process equipment. The process inflow system includes a pipeline system and a control unit. The pipeline system includes a first pipeline unit and a second pipeline unit. The first pipeline unit includes a first branch, a first output main pipeline, and a first preset pipeline. The second pipeline unit includes a second branch, a second output main pipeline, and a second preset pipeline. The control unit controls the pipeline system to alternately perform a pulsed inflow operation of a first reaction fluid / a second reaction fluid on a reaction chamber, including: controlling the first / second branch to be in a pre-flow state; controlling the first / second branch to be in a pressurized state; controlling the pulsed output of the first / second reaction fluid; and controlling the first / second branch to resume the pre-flow state. Thus, by precisely controlling the two pipeline units to alternately perform the inflow operation of "pre-flow - pressurization - pulsed output" of the first / second reaction fluid, a good pulsed nucleation effect is achieved.

[0128] The above embodiments are only illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A process influent system, characterized in that, Comprising: A pipeline system, comprising: a first pipeline unit and a second pipeline unit; the first pipeline unit includes a first branch, a first output main pipeline connected to the output end of the first branch, and a first preset pipeline; the second pipeline unit includes a second branch, a second output main pipeline connected to the output end of the second branch, and a second preset pipeline; the first output main pipeline and the second output main pipeline are connected to the inlet of the reaction chamber; the input ends of the first branch and the second branch are respectively fed with a first reaction fluid and a second reaction fluid for reaction; the first branch is sequentially provided with a first mass flow controller and a first branch valve from the input end to the output end; the second branch is sequentially provided with a second mass flow controller and a second branch valve from the input end to the output end; the input end of the first preset pipeline is connected between the first mass flow controller and the first branch valve, and is provided with a first preset valve; the input end of the second preset pipeline is connected between the second mass flow controller and the second branch valve, and is provided with a second preset valve; A control unit for controlling the pipeline system to cyclically execute a preset process step; in the preset process step, a pulsed inflow action of the first reaction fluid / second reaction fluid to the reaction chamber is alternately executed between the first pipeline unit and the second pipeline unit, including: controlling the first / second preset valve to conduct and the first / second branch valve to close to make the first / second branch in a pre-flow state; controlling the first / second preset valve and the first / second branch valve to close to make the first / second branch in a pressurized state; keeping the first / second output main pipeline conducting, controlling the first / second branch valve to open to execute the pulsed output of the first / second reaction fluid; successively controlling the closing of the first / second branch valve and the opening of the first / second preset pipeline for purging and preparing for the next pulsed output.

2. The process influent system according to claim 1, characterized in that, The first mass flow controller keeps venting before the pulsed output of the first reaction fluid is completed during the inflow action of the first reaction fluid, and stops venting after the pulsed output of the first reaction fluid is completed, and resumes venting until the pulsed output of the second reaction fluid is completed; and / or, the second mass flow controller is configured to have an opposite venting state to that of the first mass controller.

3. The process inlet flow system according to claim 1, characterized in that, The first pipeline unit further includes: at least one first sub-branch, the output end of which is connected to the first output main pipeline in a converging manner with the output end of the first branch; the second pipeline unit further includes: at least one second sub-branch, the output end of which is connected to the second output main pipeline in a converging manner with the output end of the second branch; each of the first sub-branch and the second sub-branch is provided with a first sub-branch valve and a second sub-branch valve respectively.

4. The process influent system according to claim 3, wherein, The input ends of at least one of the first sub-branches and at least one of the second sub-branches are used for inputting other fluids to be fed into the reaction chamber; among them, other fluids that will react undesirably with the second reaction fluid and do not react with the first reaction fluid are transported through the first sub-branch, and other fluids that will react undesirably with the first reaction fluid and do not react with the second reaction fluid are transported through the second sub-branch.

5. The process inlet flow system according to claim 3, characterized in that, The input end of one of the first sub-branches is used for inputting the carrier fluid of the first reaction fluid; An input end of the second sub-branch is used for inputting the carrier fluid of the second reaction fluid.

6. The process influent system according to claim 3, wherein Include at least one of the following: 1) The first auxiliary branch is provided with a third mass flow controller located in front of the first auxiliary branch valve; the second auxiliary branch is provided with a fourth mass flow controller located in front of the second auxiliary branch valve; 2) In the flow-in action, each of the first auxiliary branch valve and the second auxiliary branch valve is in an open state; 3) A first main valve and a second main valve are respectively provided in the first output trunk and the second output trunk; wherein, in the flow-in action, the first main valve and the second main valve are in an open state.

7. The process influent system according to claim 1, characterized in that, The second reaction fluid includes tungsten fluoride gas as a precursor; the first reaction fluid includes a first reducing gas for reducing tungsten; Other fluids in the first sub-branch connected to the first output trunk together with the first branch include: a second reducing gas for reducing tungsten to form a deposition, and an inert gas serving as a carrier gas for the first reducing gas; other fluids in the second sub-branch connected to the second output trunk together with the second branch include: a fluorine-containing cleaning gas, and an inert gas serving as a carrier gas for tungsten fluoride gas.

8. A process influent control method, characterized in that, A process inlet system as claimed in any one of claims 1 to 7, comprising: Cyclic execution of pre-set process steps, including: The first reaction fluid inflow action is executed, including: controlling the first preset valve to be turned on and the first branch valve to be closed to put the first branch in a pre-flow state; controlling the first preset valve and the first branch valve to be closed to put the first branch in a pressurized state; keeping the first output trunk line turned on, controlling the first branch valve to be opened to execute the pulse output of the first reaction fluid; successively controlling the closing of the first branch valve and the opening of the first preset pipeline to provide for purging and prepare for the next pulse output; The second reaction fluid inflow action is executed, including: controlling the second preset valve to be turned on and the second branch valve to be closed so that the second branch is in a pre-flow state; controlling the second preset valve and the second branch valve to be closed so that the second branch is in a pressurized state; keeping the second output trunk line turned on, controlling the second branch valve to be opened to execute the pulse output of the second reaction fluid; successively controlling the closing of the second branch valve and the opening of the second preset pipeline for purging and preparing for the next pulse output.

9. The process influent control method according to claim 8, wherein, Also includes: In the preset process step, the first mass flow controller is controlled to keep gas discharge before the pulse output of the first reaction fluid is completed in the inflow action, and to stop gas discharge after the pulse output of the first reaction fluid is completed, and to resume gas discharge after the pulse output of the second reaction fluid is completed; In the preset process steps, the second mass flow controller is controlled to keep gas outlet before the pulse output of the second reaction fluid is completed in the inflow action, and to stop gas outlet after the pulse output of the second reaction fluid is completed, and to resume gas outlet after the pulse output of the first reaction fluid is completed.

10. The process influent control method according to claim 8, characterized in that, In the preset process steps, the first sub-branch connected to the first output trunk and the second sub-branch connected to the second output trunk are kept conductive, and other fluids in the first sub-branch and the second sub-branch are maintained at respective preset stable flow rates.

11. A semiconductor processing apparatus, characterized in that, include: Reaction chamber; The process inlet flow system according to any one of claims 1 to 7.

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