Resistor structure and voltage divider device

Abstract

The invention relates to a resistor structure comprising at least one electrically insulating substrate, at least one electrically conductive terminal arranged directly or indirectly on the substrate and having a terminal resistivity, at least one resistive trace forming part of a resistive path, the resistive trace being arranged directly or indirectly and at least partially on the substrate and connected to the terminal, the invention relates to an electrical connector comprising a terminal and a resistive trace having a trace resistivity, characterized in that at least a portion of the terminal and a portion of the resistive trace are indirectly connected by a bonding section having a bonding resistivity, where the bonding resistivity is less than the trace resistivity.

Description

Technical Field

[0001] The present invention relates to a resistor structure and a voltage divider arrangement and an electrical device comprising such a resistor structure and / or a voltage divider arrangement. Background Art

[0002] The resistor structure and the voltage divider arrangement are configured for use in high voltage applications, for example between 500 V and 1000 kV. Resistors used at high voltages have a high resistance (for example greater than 100 kΩ) to limit power dissipation.

[0003] The resistor structure may include an electrically insulating substrate, at least one electrically conductive terminal applied to the substrate, and at least one resistive path applied to the substrate and joined to the terminal, the resistive path including at least one resistive trace.

[0004] In its simplest embodiment, the voltage divider device may include two resistor structures electrically connected in series for converting a high voltage (the so-called primary voltage) into a lower voltage (the so-called secondary voltage). The secondary voltage is significantly less than the primary voltage, for example with a voltage division ratio of between 10 and 100,000. In more complex embodiments of the voltage divider, one or both of the series resistor structures may be replaced by a resistor network. The resistors or corresponding resistor networks may be referred to as high-ohm resistors and low-ohm resistors, respectively.

[0005] These devices can be integrated in electrical equipment in which particularly harsh operating conditions may occur, such as strong voltage overloads, power overloads, temperature changes, humidity changes, mechanical stress and shocks. Examples of electrical equipment are electronic instrument transformers (sensors), such as ABB's KEVCD and KEVA sensor types, which are typically used in power systems with rated primary voltages between 7.2 kV and 48 kV.

[0006] US 9,299,484 B2 discloses a resistor structure and a resistor voltage divider device, the contents of which are incorporated herein.

[0007] High voltage applications often require specific technical work to ensure functionality and safety. The reason is that such resistor structures are exposed to high electric field strengths, which often impose excessive electrical stress / static strength. This can lead to dielectric damage / insulation failures such as partial discharge or electrical breakdown.

[0008] Therefore, it is desirable to improve resistor structures and voltage divider arrangements with respect to manufacturing, reliability, and safety. Summary of the invention

[0009] The present invention provides a resistor structure, comprising at least one electrically insulating substrate, at least one, preferably two, conductive terminals directly or indirectly arranged on the substrate and having a terminal resistivity, at least one resistor trace forming a part of a resistor path, wherein the resistor trace (optionally locally / segmentally) is directly or indirectly arranged on the substrate and connected to the terminal, and the resistor trace has a trace resistivity, wherein at least a part of the terminal and a part of the resistor trace are indirectly connected via a joining section, the joining section having a joining section resistivity, wherein the joining section resistivity is less than the trace resistivity.

[0010] By providing a joining section between the terminal of the resistor path and the resistor trace, direct contact between the terminal and the resistor trace is avoided. There are two connection points between the terminal and the resistor trace instead of a single direct connection point. More specifically, the first connection point is between the terminal and the joining section and the second connection point is between the joining section and the resistor trace. This can be regarded as an indirect connection between the terminal and the resistor trace, i.e., connected through the joining section. The joining section can be regarded as an intermediate entity between the terminal and the resistor trace.

[0011] In the case where there is a direct connection point between the conductive terminal and the resistor trace, metal migration / diffusion from the conductive terminal to the resistor trace may occur during firing during manufacturing or during operation of the resistor structure at high voltage. This metal migration into the resistor trace will change the resistance value of the resistor path. However, this will change the characteristics of the resistor path and thus compromise the reliability of the resistor structure. More specifically, the migration of metal atoms into the resistor trace / resistance path will reduce the resistivity, thereby reducing the resistance of the resistor trace / resistance path and / or its temperature coefficient of resistance.

[0012] By providing a joining section between the terminal and the resistor trace / resistance path, and thus the conductive terminal is directly connected only to the joining section and not to the resistor trace, there is no direct metal migration / diffusion from the terminal to the resistor trace. Metal migration may occur mainly in the joining section, and may reach the resistor trace to a limited extent, at least in a reduced amount. Therefore, compared with direct connection, at least the metal migration from the conductive terminal to the resistor trace is reduced. Therefore, at least the undesirable change in the electrical characteristics of the resistor trace / resistance path is reduced. Since the joining section has a smaller resistivity than the resistor trace, the resistivity of the joining section is closer to the resistivity of the conductive terminal than the resistivity of the resistor trace. This means that the difference in resistivity is reduced. Therefore, when the resistivity of the joining section is relatively low, at least lower than the resistivity of the resistor trace / resistance path, the relative reduction in resistivity becomes less. Therefore, the change in electrical characteristics caused by the migration of metal from the conductive terminal to the joining section is insignificant. For the manufacturing process, this may be advantageous because it supports co-firing, that is, firing various entities such as terminals, joining sections and resistor traces in the same firing process. Since the firing process is typically costly and / or energy intensive, economic and environmental benefits can be gained by reducing the number of firing cycles.

[0013] By making the resistivity of the junction section lower than the resistivity of the resistor trace / resistance path, it is preferably achieved that the resistance value of the junction section is lower than the resistance value of the resistor path. Therefore, undesired changes in the resistance of the junction section, such as changes caused by metal migration to the junction section, have at most a lower impact on the overall resistance of the resistor structure formed by the resistor path and one or more junction sections. This helps to tolerate changes in the electrical characteristics of the metal migration to the bonding portion and the junction section, while reducing the impact on the electrical characteristics of the resistor structure. This helps to efficiently manufacture the resistor structure with improved precision and stability.

[0014] The joining section may be made of a material that better matches the material of the resistor trace than the terminals, for example having more similar physical properties (such as resistivity or thermal expansion coefficient) or composition. This may improve the interface between the joining section and the resistor trace. As a result, the resistor structure may be more robust and its resistivity may be improved in terms of accuracy and stability. As a result, the accuracy and voltage resistance of the resistor structure and the corresponding voltage divider device may be improved.

[0015] The resistor materials commonly used in thick film technology are based on a formulation that mainly contains glass, conductive oxide ceramic particles (such as ruthenium oxide) and possibly other additives (such as metal particles). The resistivity (film resistance) of thick film resistor materials or multilayer films is usually between 50mΩ / square and 1GΩ / square.

[0016] In the context of the present invention, the resistive trace of the resistive path is made of a resistive material having a resistivity preferably between 50Ω / square and 100MΩ / square, or preferably between 500Ω / square and 10MΩ / square. Non-exhaustive examples of possible resistive materials are the R8700 series from Heraeus or the 2000 series from DuPont.

[0017] The conductive materials commonly used in thick film technology are based on formulations containing large amounts of metal particles such as Ag, Pd, Au, Pt and possibly other additives. Conductive materials containing large amounts of Ag are often used because of their very high electrical conductivity, relatively low cost and excellent compatibility with solder alloys used in the electronics industry. The resistivity of thick film conductor materials or multilayer films is typically between 1 mΩ / square and 1 Ω / square. Non-exhaustive examples of possible conductive materials are C2210 from Heraeus or 7484 from DuPont.

[0018] The volume resistivity of the insulating material is greater than 10 7 Ω·cm.

[0019] Alternatively, the resistivity of the junction section may be greater than the resistivity of the terminal. In this case, a gradual decrease in resistivity from the resistor trace to the terminal may be achieved. This may further reduce unwanted metal migration from the terminal or from the junction section into the resistor trace / resistor path. This may allow the physical properties or composition of the junction section to be better matched to the resistor trace.

[0020] Optionally, the bonding section may have a length of at least 0.1 mm, preferably at least 0.3 mm, more preferably at least 1 mm. This may more reliably avoid metal migration from the terminal to the resistive path. The length of the bonding section may be the shortest distance between the resistive trace and the conductive terminal along the bonding section. Therefore, this length may be considered as the "shortest path length". The shortest path length may be considered to not include the overlap with the trace, but include the overlap with other resistive traces if other resistive traces are provided on the bonding path.

[0021] The bonding section may be made of resistive materials including conductive oxide ceramics, glass, and the like.

[0022] Optionally, the bonding section resistivity may be at least 100 mΩ / square, preferably less than 1000 Ω / square, more preferably between 0.5 Ω / square and 100 Ω / square. This may help balance the aforementioned desired effects and support efficient manufacturing.

[0023] Optionally, the trace resistivity may be at least 10 times or at least 100 times the resistivity of the bonded section. In some embodiments, the trace resistivity may be at least 1000 times or even 10000 times the resistivity of the bonded section. This may be a measure to nearly eliminate metal migration into the resistive trace / resistive path by increasing the length of the bonded section.

[0024] Optionally, the resistance of the bonding section is less than 10% of the resistance of the resistive path. In some embodiments, the resistance of the bonding section can be between 0.1% and 10% of the resistance of the resistive path. This may help reduce the effects of metal migration on the resistor structure and also help better match between the materials of the bonding section and the resistive trace.

[0025] Optionally, the joining section may at least partially overlap a portion of the resistor trace. This is beneficial for manufacturing a resistor trace with improved reliability and reproducibility, as there will be no discontinuity of the resistor trace at the overlap. Portions of the terminal may at least partially overlap the joining section. This helps avoid discontinuities in the joining section at the overlap.

[0026] Optionally, the joining section may at least partially overlap a portion of the terminal. This may be beneficial in manufacturing terms as it means the terminal can be applied and fired before the joining section or resistive trace is applied, allowing the terminal to be fired at a higher temperature, for example.

[0027] Optionally, the bonding section may be a bonding element connecting a portion of the terminal and optionally a starting point or end portion of the resistor track / resistance path. In this embodiment, metal migration between the resistor path and the terminal may be reduced.

[0028] Alternatively, additionally or alternatively, the joining section may be an interconnection element connecting at least two resistive traces of the resistive path with a portion of the terminal. In this embodiment, metal migration between the resistive trace / resistive path and the terminal may be reduced.

[0029] Alternatively, additionally or alternatively, the bonding section may be an interconnection path that connects at least one end of a resistance trace of a first resistance path and one end of a resistance trace of a second resistance path to a portion of a terminal, wherein the resistance paths include at least a first resistance path and a second resistance path, each resistance path including at least one resistance trace having a terminal head. In this embodiment, metal migration between the resistance paths and the terminals may be reduced.

[0030] Alternatively, a plurality of bonding sections may be provided. For example, the first terminal, the second terminal and the third terminal and the resistance path may include a first resistance path and a second resistance path. At least one bonding section may be a bonding element connecting a portion of the first terminal to the starting point of the resistance trace of the first resistance path. Additionally or alternatively, at least one bonding section may be an interconnection path connecting the resistance trace of the first resistance path, the resistance trace of the second resistance path and the second terminal. Additionally or alternatively, at least one bonding section may be an interconnection element connecting at least two starting points of the resistance trace of the second resistance path and a portion of the third terminal. In this embodiment, metal migration between the resistance path and the terminal may be reduced.

[0031] Alternatively, the resistive path may consist of a resistive trace applied as a continuous film of resistive material shaped at least partially like a meander wave or like a spiral, or may have any other preferred shape.

[0032] Optionally, the resistive path comprises (a plurality of) resistive traces which are electrically connected in series via a transition element to form the resistive path.The resistive traces may be at least partially parallel to each other.

[0033] Optionally, the resistive path comprises resistive trace(s) or portions of resistive traces that are electrically connected in parallel via a joining section to form the resistive path.

[0034] Optionally, the resistivity of the joining section is approximately the same as the resistivity of the transition element, wherein the joining section and the transition element are preferably made of the same material and are deposited in the same process step.

[0035] Optionally, the resistance of the joining section is less than 10% of the resistance of the resistive path, or preferably between 0.1% and 10%.

[0036] Optionally, the bonding section includes a first bonding section and a second bonding section, wherein the resistive trace includes a resistive trace portion connected between the first bonding section and the second bonding section, wherein a length of the first bonding section is greater than a length of the resistive trace portion.

[0037] The resistor structure of the present invention can be manufactured using thick film technology, such as screen printing or template printing or direct printing by nozzle. The conductive material film and the resistive material film are sequentially deposited on an insulating substrate. Typically, a single layer of a single material is deposited, followed by subsequent steps, such as drying or firing. For example, the conductive film or the resistive film is fired at a very high temperature between 600°C and 950°C.

[0038] The insulating substrate may be made of a ceramic material, such as alumina or aluminum nitride. The insulating substrate may be in the form of a flat planar sheet, or in the form of a cylinder.

[0039] In addition to the first conductive terminal, typically at least a second conductive terminal may be arranged in the resistive structure, wherein the resistive path is connected to the first terminal and the second terminal. In the voltage divider, the high ohmic resistor and the low ohmic resistor may share a terminal, so that the voltage divider device may include at least a first terminal, a second terminal and a third terminal.

[0040] In addition to the at least first resistive path, the resistive path may include a second resistive path, the paths being connected in series. A resistive path (or multiple resistive paths) may be at least partially in the form of a spiral. Thus, the resistive path may extend at least partially in a spiral.

[0041] A covering / coating made of an electrically insulating material may be provided. In some embodiments, the covering may be the outermost entity or layer. The covering may cover the entire or a portion of the resistive structure. The covering may cover at least a portion of the resistive path and may cover a portion or portions of one or more terminals. A portion of each terminal is preferably not covered by the covering in order to provide an electrical connection to the resistive structure. The covering may be a film and may be made to a thickness between 5 and 100 μm and / or 3 and 30 μm. The covering may have different thicknesses, optionally with a first thickness between 5 and 100 μm and a second thickness between 3 and 30 μm, wherein the first thickness is at least 50% greater than the second thickness or at least 5 μm.

[0042] Optionally, a second coating material, for example made of a polymer, may be applied over the first coating material. The second coating material may be thicker than the first coating material.

[0043] A shunt may be provided. A shunt section is constructed to shunt different parts of a resistive trace to proportionally reduce its effective resistive length. This may mean that the electrically effective length (and therefore the resistance of the trace) is shorter than the actual length of the trace. A transition element or junction section may act as a shunt section. The resistivity of the shunt section is lower than the resistivity of the resistive trace to which the shunt section (e.g., transition element) is connected.

[0044] Optionally, the resistor structure comprises substantially identical resistor traces, and preferably arranged periodically with substantially the same pitch. The resistor traces may be made of the same resistor material, and may mostly have the same thickness, width, slope and (actual) length. This facilitates efficient and reproducible manufacture of the resistor traces and resistor paths.

[0045] The voltage divider device of the present invention may include a high-ohmic resistor and a low-ohmic resistor electrically connected in series, wherein the voltage divider device includes at least one resistor structure according to the present invention. The high-ohmic resistor is formed by one or more resistor tracks, the low-ohmic resistor is formed by one or more resistor tracks, and the resistances of the high-ohmic and low-ohmic resistors are different.

[0046] Optionally, the voltage divider arrangement is provided on the same substrate and comprises substantially identical resistive traces. This may provide a device that is more efficient to manufacture and more stable.

[0047] The electrical device of the present invention comprises the resistor structure or the voltage divider arrangement of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1(a) to Figure 1(c) Cross-sectional views of the resistor structure of the present invention are shown, wherein FIG. 1( a ), FIG. 1( b ) and FIG. 1( c ) represent different embodiments.

[0049] Figure 2 The voltage divider arrangement of the invention is shown in top view on a planar substrate.

[0050] Figure 3(a) to Figure 3(b) A perspective view of a voltage divider device of the present invention on a cylindrical substrate is shown. Figures 3(a) and 3(b) show views from different angles.

[0051] Figure 4(a) to Figure 4(b) A perspective view of a voltage divider device of the present invention on a cylindrical substrate is shown. Figures 4(a) and 4(b) show views from different angles. DETAILED DESCRIPTION

[0052] Figure 1(a) to Figure 1(c) A resistor structure 1 is shown, which includes at least one electrically insulating substrate 2 as a basis for the resistor structure 1, at least one electrically conductive terminal 4 disposed directly on (on top of) the substrate 2. In another embodiment, the terminal 4 may be disposed indirectly on the substrate 2, which means that there may be one or more other layers between the terminal 4 and the substrate 2. The terminal has a terminal resistivity R t There is at least one resistive track 8 which is part of the resistive path 3. Figure 1(a) to Figure 1(c) In the embodiment, the resistive trace 8 is disposed directly on the substrate 2 (on top of it), which is at least partially on the substrate 2. In another embodiment, the resistive trace 8 may be disposed indirectly on the substrate 2, which means that there may be one or more other layers between the resistive trace 8 and the substrate 2. The resistive trace 8 has a resistivity R p At least a portion of the terminal 4 and a portion of the resistive trace 8 are bonded to a conductive sheet having a bonding resistivity R j When viewed along the thickness direction D, the substrate 2 is the lowermost layer, wherein the terminal 4, the resistor path 3 including the resistor trace 8, and the bonding section 11 can be regarded as an upper layer.

[0053] exist Figure 1(a) to Figure 1(c), the joining section 11 is a joining element 12 that connects a portion of the terminal 4 and the starting point or end of the resistor trace 8. More specifically, as shown in FIG. 1( a), a portion of the resistor trace 8 may at least partially overlap with the joining section 11. This means that when viewed along the thickness direction D, a portion of the joining section 11 may be below the resistor trace 8. As shown in FIG. 1( c), a portion of the joining section 11 may overlap with a portion of the terminal 4. In other words, the joining section 11 may be partially located on top of a portion of the terminal 4. FIG. 1( b) shows an embodiment in which the joining section 11 overlaps with the resistor trace 8, and the terminal 4 overlaps with the joining section 11.

[0054] Joint resistivity R j Less than the trace resistivity R p At the same time, the joint resistivity R j Greater than the terminal resistivity R t If the joint resistivity R j Greater than the terminal resistivity R t ,but Figure 1(a) to Figure 1(c) The resistivity of the entities shown decreases from left to right (i.e., from trace resistivity to terminal resistivity). In the embodiment shown, the trace resistivity R p is the junction resistivity R j In absolute terms, the junction resistivity is at least 100 mΩ / square.

[0055] Figure 2 is a top view of a voltage divider device 5 comprising two resistor structures 1 according to the invention on a planar substrate 2. In addition to the joining element 12 representing the joining section 11 of the invention, two further embodiments of the joining section 11 are shown: Figure 2 The bonding section 11 implemented as an interconnection element 13 and the bonding section 11 implemented as an interconnection path 14 are shown. The interconnection element 13 connects at least two resistor tracks 8 (at Figure 2 The first terminal 4-1 is connected to the resistor trace 8 of the first resistor path 3-1 and the second terminal 4-2. The interconnection path 14 connects at least one end of the resistor trace 8 of the first resistor path 3-1 and one end of the resistor trace 8 of the second resistor path 3-2 and a part of the second terminal 4-2. In this embodiment, the resistor path 3 includes the first resistor path 3-1 and the second resistor path 3-2, each of which has at least one resistor trace 8 with an end portion. The junction element 12 connects the first terminal 4-1 and the resistor trace 8 of the first resistor path 3-1. Figure 2 Also shown is the substrate 2 and the gap 6 between the subsequent resistive trace 8. The length of any one of the bonding sections 11 implemented as connecting elements 12, interconnecting elements 13 or interconnecting paths 14 is greater than 0.1 mm.

[0056] FIG. 3( a) and FIG. 3( b) show a voltage divider device 5 for voltage conversion in a cylindrical form. The resistance path 3 includes a first resistance path 3-1 and a second resistance path 3-2, and the resistance trace 8 is spiral. The voltage divider device 5 includes a first resistor structure according to the present invention and a second resistor structure according to the present invention. The first resistor structure and the second resistor structure are connected in series, and their resistances are different. More specifically, from different angles represented by the views of FIG. 3( a) and FIG. 3( b), a high-ohm resistor 9 representing the first resistor structure of the present invention and a low-ohm resistor 10 representing the second resistor structure of the present invention are obvious. The high-ohm resistor 9 includes a resistance trace 8 connected by a transition element 7 forming a first resistance path 3-1. As shown in the figure, one transition element 7 connects two resistance traces 8. The low-ohm resistor 10 also includes a resistance trace 8 connected by a transition element 7 forming a second resistance path 3-2, and also includes an interconnection element 13 and an interconnection path 14, a second terminal 4-2 and a third terminal 4-3. The interconnection path 14 can be set without a transition element 7. The interconnect paths may also be connected in the middle of the trace as in Figures 4(a) and 4(b), but may also be connected as in the variant arrangements of Figures 3(a) and 3(b).

[0057] 4(a) and 4(b) show a resistor trace 8 having a trace segment 8-2 in a low-ohmic resistor 10 and a trace segment 8-1 in a high-ohmic resistor 9. Therefore, both the high-ohmic resistor 9 and the low-ohmic resistor 10 include a rational number / integer number of resistor traces 8, so that the voltage division ratio can be finely configured. This is possible because the interconnection path 14 includes a so-called shunt section. More specifically, FIGS. 4(a) and 4(b) show a voltage divider device 5, in which a first trace segment 8-1 of the resistor trace 8 is included in the high-ohmic resistor 9 and a second trace segment 8-2 of the same resistor trace 8 is included in the low-ohmic resistor 10. The trace segment 8-2 in the low-ohmic resistor 10 is connected to the third terminal 4-3 via a second junction element 12-2 that looks like a transition element 7. The second joining element 12-2 is provided with a shunt section, and the interconnection path 14 is provided with a shunt section to reduce the effective resistance length of the resistance track 8 at the second end of the resistance path 3 at the second terminal 4-2 and the third terminal 4-3 by a significant amount. The transition element 7 is provided with a shunt section to reduce the effective resistance length of the next resistance track 8 near the second end of the resistance path 3 by a lower amount. Each of the two transition elements 7 is provided with a corresponding shunt section to reduce the effective resistance length of the two corresponding resistance tracks 8 at the first end of the resistance path 3. The first joining element 12-1 is provided at the first end of the resistance path 3 located at the first terminal 4-1.

[0058] exist Figure 2 , Figure 3(a) to Figure 3(b) and Figure 4(a) to Figure 4(b) In each of the figures, the joining element 12 includes a first joining section 12-1 and a second joining section 12-2, wherein the resistive trace 8 includes a resistive trace portion connected between the first joining section 12-1 and the second joining section 12-2, wherein the length of the first joining section is greater than the length of the resistive trace portion.

[0059] Reference numerals

[0060] 1Resistors / resistor structures

[0061] 2 Electrically insulating substrate

[0062] 3 Resistor Path

[0063] 3-1 First resistance path

[0064] 3-2 Second resistance path

[0065] 4 terminals

[0066] 4-1 First terminal

[0067] 4-2 Second terminal

[0068] 4-3 The third terminal

[0069] 5 Voltage Divider Device

[0070] 6 Clearance

[0071] 7 Transition Elements

[0072] 8 resistor traces

[0073] 8-1 First trace section

[0074] 8-2 Second trace section

[0075] 9 High Ohm Resistors

[0076] 10 Low Ohm Resistors

[0077] 11 Joint section

[0078] 12 Joining elements

[0079] 12-1 First bonding element

[0080] 12-2 Second bonding element

[0081] 13 Interconnection components

[0082] 14 Interconnection Path

[0083] R p The resistivity of the resistive trace of the resistive path

[0084] R t Resistivity of terminal

[0085] R j Resistivity of the joint section

[0086] DThickness direction

Claims

1. A resistor structure (1), the resistor structure comprising at least: an electrically insulating substrate (2), Directly or indirectly disposed on a substrate (2) and having a terminal resistivity (R t ) of at least one conductive terminal (4), At least one resistive track (8) forming part of the resistive path (3), the resistive track (8) being directly or indirectly and at least partially disposed on the substrate (2), the resistive track being connected to the terminal (4) and having a track resistivity (R p ), Features: At least a portion of the terminal (4) and a portion of the resistive trace (8) are bonded to a conductive sheet having a bonding resistivity (R j ) is indirectly connected to the bonding section (11), wherein the bonding resistivity (R j ) is less than the trace resistivity (R p ).

2. The resistor structure according to claim 1, wherein: Joint resistivity (R j ) is greater than the terminal resistivity (R t ).

3. A resistor structure according to any one of the preceding claims, wherein: The length of the joining section (11) is at least 0.1 mm, preferably at least 0.3 mm, more preferably at least 1 mm.

4. A resistor structure according to any one of the preceding claims, wherein: Joint resistivity (R j ) is at least 100 mΩ / square, preferably lower than 1000 Ω / square, more preferably between 0.5 Ω / square and 100 Ω / square.

5. A resistor structure according to any one of the preceding claims, wherein: Trace resistivity (R p ) is the joint resistivity (R j ) is at least 10 times or at least 100 times.

6. A resistor structure according to any one of the preceding claims, wherein: The joining section (11) at least partially overlaps a portion of the resistive trace (8), and / or a portion of the terminal at least partially overlaps the joining section (11).

7. A resistor structure according to any one of the preceding claims, wherein: The bonding section (11) is a bonding element (12) that connects a portion of the terminal (4-1) to the starting point or end of the resistor track (8).

8. A resistor structure according to any one of the preceding claims, wherein: The bonding section (11) is an interconnection element (13) connecting at least two resistive traces (8) of the resistive path (3) with a portion of the terminal (4-3).

9. A resistor structure according to any one of the preceding claims, wherein: The bonding section (11) is an interconnection path (14) that connects at least one end of a resistor trace (8) of a first resistor path (3-1) and a resistor trace (8) of a second resistor path (3-2) and a portion of a terminal (4-2), wherein the resistor path (3) includes at least the first resistor path (3-1) and the second resistor path (3-2), and each resistor path includes at least one resistor trace (8) having an end portion.

10. The resistor structure according to any one of claims 7 to 9, wherein: A plurality of bonding sections (11) and a first terminal (4-1), a second terminal (4-2) and a third terminal (4-3) are provided, and the resistance path (3) includes a first resistance path (3-1) and a second resistance path (3-2). in, At least one joining section (11) is a joining element (12) connecting a portion of the first terminal (4-1) and a starting point of the resistance track (8) of the first resistance path (3-1), and / or At least one bonding section (11) is an interconnection path (14) connecting the resistance trace (8) of the first resistance path (3-1), the resistance trace (8) of the second resistance path (3-2) and the second terminal (4-2), and / or At least one bonding section (11) is an interconnection element (13) connecting at least two resistive traces (8) of the second resistive path (3-2) and a portion of the third terminal (4-3).

11. A voltage divider device (5) for a power system for voltage conversion, the voltage divider device comprising a first resistor structure (1) and a second resistor structure (1), the first resistor structure being a resistor structure according to any one of the preceding claims, and the second resistor structure being a resistor structure according to any one of the preceding claims, wherein: The first resistor structure and the second resistor structure are connected in series, and the first resistor structure and the second resistor structure have different resistances.

12. An electrical device comprising a resistor structure (1) according to any one of claims 1 to 10 and / or a voltage divider arrangement (5) according to claim 11.

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