Method of operating particle beam apparatus, computer program product and particle beam apparatus

Abstract

The invention relates to a method for operating a particle beam apparatus for imaging, analyzing and / or processing an object. The invention further relates to a computer program product and to a particle beam device for carrying out the method. The method comprises guiding the particle beam using a first guiding device and a second guiding device such that the particle beam is guided to a first location on the surface of the object, the first locations being arranged along a first geometry on the object, and guiding the particle beam using the first guiding device and the second guiding device such that the particle beam is guided to a second location on the surface of the object, the particle beam is guided to a first location on the surface of the object such that the particle beam is guided to a second location on the surface of the object, which second location is arranged along a second geometry on the object, where the particle beam is guided along the first geometry and / or along the second geometry faster in time than the particle beam is guided from the first geometry to the second geometry.

Description

Technical Field

[0001] The present invention relates to a method for operating a particle beam device for imaging, analyzing and / or processing an object. In addition, the present invention relates to a computer program product and a particle beam device for performing the method. For example, the particle beam device is configured as an electron beam device and / or an ion beam device. Background Art

[0002] Electron beam devices, in particular scanning electron microscopes (hereinafter also referred to as SEM) and / or transmission electron microscopes (hereinafter also referred to as TEM), are used to examine objects (hereinafter also referred to as samples) to learn about their properties and behavior under certain conditions.

[0003] In SEM, a beam generator is used to generate an electron beam (hereinafter also referred to as a primary electron beam), and a beam guidance system is used to focus the electron beam onto the object to be inspected. A deflection device in the form of a scanning device is used to guide the primary electron beam on the surface of the object to be inspected. The electrons of the primary electron beam interact with the object to be inspected. For example, as a result of the interaction, electrons (so-called secondary electrons) are emitted from the object, and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for imaging. Thus, an image of the object to be inspected is obtained. In addition, the interaction generates interaction radiation (such as X-rays or cathode luminescence), which is detected by a detector to analyze the object and is subsequently evaluated.

[0004] In TEM, a beam generator is used to generate a primary electron beam, and a beam guiding system is used to guide the primary electron beam onto the object to be inspected. The primary electron beam passes through the object to be inspected. When the primary electron beam passes through the object to be inspected, the electrons of the primary electron beam interact with the material of the object to be inspected. The electrons passing through the object to be inspected are imaged on a fluorescent screen or a detector (such as a camera) by a system including an objective lens and a projection lens. Imaging can also be performed in the scanning mode of the TEM. This type of TEM is generally referred to as a STEM. In addition, another detector can be set to detect electrons backscattered from the object to be inspected and / or secondary electrons emitted from the object to be inspected to image the object to be inspected.

[0005] It is known to combine the functionality of STEM and SEM in a single particle beam device. Thus, with such a particle beam device, an object can be analyzed and imaged using the SEM functionality and / or the STEM functionality.

[0006] In addition, particle beam devices with ion beam columns are known. Ions are generated using an ion beam generator arranged in the ion beam column. The ions are used to process the object. For example, during processing, material of the object is ablated from the object, or material is applied to the object, particularly in the case of a gas supply. Additionally or alternatively, the ions are used for imaging.

[0007] In addition, combined devices are known, which are used for imaging, analyzing and / or processing objects. The combined device is configured to direct both electrons and ions to the object to be inspected. For example, it is known to equip the SEM with an ion beam column in addition. An ion beam generator arranged in the ion beam column is used to generate ions for processing the object (e.g., ablating material from the object or applying material to the object) or also for imaging the object. For this purpose, a deflection device in the form of a scanning device is used to scan the ions on the object. The SEM is particularly used for observing processing, but also for further inspection (imaging and / or analysis) of processed or unprocessed objects.

[0008] Particle beam devices can be used to image objects with high spatial resolution. This can be achieved by using a primary electron beam with a very small diameter on the plane of the object. In addition, the higher the electrons of the primary electron beam are first accelerated in the particle beam device, and finally decelerated to the desired energy (hereinafter referred to as landing energy) in the objective lens or in the region of the objective lens, the better the spatial resolution can become. For example, the electrons of the primary electron beam are accelerated with an accelerating voltage of 2 kV to 30 kV and are guided through the electron beam column of the particle beam device. In the region between the objective lens and the object, the electrons of the primary electron beam are decelerated to the desired landing energy, and these electrons impact on the object with the desired landing energy. The landing energy of the electrons of the primary electron beam is, for example, in the range of 10 eV to 30 keV.

[0009] It is known to provide a particle beam device with a scanning system for guiding a particle beam (e.g., a primary electron beam or an ion beam) on an object. For example, the scanning system is configured as a deflection system. The deflection system can have a first deflection device and a second deflection device, which are arranged one behind the other along the optical axis of the particle beam device. By combining the first deflection device and the second deflection device to deflect the particle beam, the position of a virtual pivot point of the particle beam can be displaced along the optical axis of the particle beam device. The deflection of the particle beam appears to be actually produced by tilting around the virtual pivot point.

[0010] A method is known from the prior art for imaging defects in crystalline materials. The method is called electron channeling contrast imaging (hereinafter also referred to as ECCI). It is based on the electron channeling effect and diffraction effects generated when a primary electron beam passes through the lattice of an object. Depending on the direction of the primary electron beam relative to the lattice, the density of backscattered electrons scattered from the object changes. Therefore, when the impinging primary electron beam scans over the object, lattice defects can be monitored by capturing the image generated by the backscattered electrons. When a set of lattice planes is close to the Bragg condition, the density of backscattered electrons is at its minimum for a given primary electron beam direction. In this case, most of the electrons pass through the lattice.

[0011] ECCI can be combined with another method known from the prior art, which is called rocking beam. Another known method provides for rocking the primary electron beam within a certain angle range and for directing the incident primary electron beam to a single position on the surface of the object. Another known method provides for using a two-stage deflection beam system. The primary electron beam is deflected away from the optical axis of the particle beam device by a first deflection device (also called a first guide device) and synchronously deflected back to the optical axis by a second deflection device (also called a second guide device). The primary electron beam is irradiated at the same position of the object using an objective lens. Another known method is performed within a certain angle range. Another known method can also be described as follows. Using (i) a first guide device configured to guide the primary electron beam and (ii) a second guide device configured to guide the primary electron beam, the primary electron beam is directed to a specific position of a scanning area on the surface of the object. As viewed from the beam generator in the direction of the object, the first guide device is arranged in front, followed by the second guide device. The first guide device directs the primary electron beam away from the optical axis at a first angle relative to the optical axis. The second guiding device guides the primary electron beam in the direction of the optical axis at a second angle relative to the optical axis. The first angle and the second angle can be the same. When the primary electron beam is guided to the position of the scanning area, the first angle passes through a first predeterminable value range, and the second angle passes through a second predeterminable value range.

[0012] With regard to the prior art, reference is made to DE 11 2016 005 577 B4 and US 2020 / 0013581 A1.

[0013] The use of objective lenses in particle beam devices can cause aberrations, in particular spherical aberrations, which can cause distortions that lead to undesired deflections of the particle beam. Summary of the invention

[0014] The invention is therefore based on the object of providing a method, a computer program product and a particle beam device for carrying out the method, with which undesired deflections of a particle beam caused by aberrations can be reduced or avoided.

[0015] According to the present invention, this object is achieved using a method having the features described below. The features described below provide a computer program product having a program code for controlling a particle beam device for performing the method. In addition, the features described below provide a particle beam device for imaging, analyzing and / or processing an object. Other features of the present invention will emerge from the following description, the appended claims and / or the accompanying drawings.

[0016] The method according to the invention is used to operate a particle beam device for imaging, analyzing and / or processing an object. The particle beam device comprises at least one beam generator for generating a particle beam of charged particles. For example, the charged particles are electrons or ions. In addition, the particle beam device may comprise an objective lens for focusing the particle beam onto the object.

[0017] The method according to the present invention comprises directing a particle beam to an object. In particular, a first guiding device is used to direct the particle beam away from the optical axis at a first angle relative to the optical axis of the particle beam device. In addition, the method according to the present invention comprises directing the particle beam using a second guiding device, wherein the particle beam is directed to the optical axis at a second angle relative to the optical axis so that the particle beam is directed to a first position on the surface of the object. The first position is arranged along a first geometric shape on the surface of the object. The first geometric shape can be any geometric shape. Embodiments of the first geometric shape are further discussed below. The first guiding device can be a first deflection device, such as a first magnetic deflection device and / or an electrostatic deflection device. The second guiding device can be a second deflection device, such as a second magnetic deflection device and / or an electrostatic deflection device.

[0018] Method according to the present invention also comprises using the first guiding device to guide the particle beam away from the optical axis at the third angle relative to the optical axis. In addition, method according to the present invention comprises using the second guiding device to guide the particle beam, wherein, at the fourth angle relative to the optical axis, the particle beam is guided to the optical axis so that the particle beam is guided to the second position on the surface of the object. The second position is arranged along the second geometric shape on the surface of the object. The second geometric shape can be any geometric shape. The embodiment of the second geometric shape is further discussed below.

[0019] The method according to the invention uses a control device of a particle beam device to provide a first guidance signal for guiding a particle beam. The first guidance signal is provided to a first guidance device by the control device using a first signal connection between the control device and the first guidance device. The first signal connection can be a physical connection (e.g., a connecting line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network).

[0020] The method according to the present invention also uses a control device of the particle beam device to provide a second guidance signal for guiding the particle beam. The second guidance signal is provided to the second guidance device by the control device using a second signal connection between the control device and the second guidance device. The second signal connection can be a physical connection (e.g., a connecting line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network).

[0021] The method according to the present invention also includes providing a first guide signal and a second guide signal according to a first distance from a center point arranged on the surface of the object to a first geometric shape. The first guide signal and the second guide signal are used to guide the particle beam along the first geometric shape. The first distance can be a distance from the center point to one of the first positions arranged on the first geometric shape. For example, the distance can be the shortest distance among all distances from the center point to the first position arranged on the first geometric shape.

[0022] In addition, the method according to the present invention comprises providing a first guide signal and a second guide signal according to a second distance from a center point arranged on the surface of the object to a second geometric shape. The first guide signal and the second guide signal are used to guide the particle beam along the second geometric shape. The second distance can be a distance from the center point to one of the second positions arranged on the second geometric shape. For example, the distance can be the shortest distance among all distances from the center point to the second position arranged on the second geometric shape.

[0023] According to the invention, guiding the particle beam along the first geometry and / or along the second geometry is faster in terms of time than guiding the particle beam from the first geometry to the second geometry.

[0024] It has been found that the method according to the invention reduces or avoids undesired deflections of the particle beam caused by aberrations, in particular aberrations caused by an objective lens of the particle beam. The aberration may be a spherical aberration. The invention provides the possibility of using a control device to adjust the first guide signal and the second guide signal to compensate for the undesired deflections that occur due to the aberrations. For example, the first guide signal and the second guide signal are adjusted according to the first distance and the second distance. Embodiments for adjusting the first guide signal and the second guide signal are further discussed below.

[0025] Embodiments of the method according to the invention additionally or alternatively include at least one of the following: (i) using a circular shape as the first geometric shape; (ii) using a circular shape as the second geometric shape; (iii) using a first circular shape as the first geometric shape; and (iv) using a second circular shape as the second geometric shape. It is expressly pointed out that the invention is not limited to these geometric shapes. Instead, any geometric shape suitable for the invention may be used.

[0026] A first geometric shape, in particular a first circular shape and / or a first circle can be determined by a center point and a first radius extending from the center point along the surface of the object. A second geometric shape, in particular a second circular shape and / or a second circle can be determined by a center point and a second radius extending from the center point along the surface of the object. Another embodiment of the method according to the present invention additionally or alternatively comprises: (i) providing a first guide signal and a second guide signal according to the first radius to guide the particle beam along the first geometric shape; and (ii) providing a first guide signal and a second guide signal according to the second radius to guide the particle beam along the second geometric shape.

[0027] As described above, the first geometric shape and the second geometric shape can be any geometric shapes. Therefore, another embodiment of the method according to the present invention additionally or alternatively includes: (i) using a first polygon as the first geometric shape; and (ii) using a second polygon as the second geometric shape. For example, the first geometric shape can be a triangle or a square. In addition, the second geometric shape can be a triangle or a square. As described above, the present invention is not limited to these geometric shapes. Instead, any geometric shape suitable for the present invention can be used.

[0028] Another embodiment of the method according to the invention additionally or alternatively provides that the first distance is smaller than the second distance. Furthermore, the method according to the invention comprises: (i) providing, by the control device, a first guidance signal having a first gain factor of the first amplifier; and (ii) providing, by the control device, a second guidance signal having a second gain factor of the second amplifier. The ratio of the first gain factor to the second gain factor when guiding the particle beam along the second geometric shape is higher than the ratio of the first gain factor to the second gain factor when guiding the particle beam along the first geometric shape.

[0029] The aforementioned gain factor is selected according to the distance. As described above, the first pilot signal and the second pilot signal are provided by the control device. The control device may include or may be connected to an amplifier for providing the first pilot signal and the second pilot signal. The amplifier is configured to increase or decrease the first pilot signal using the first gain factor and / or increase or decrease the second pilot signal using the second gain factor. Additionally or alternatively, the control device may include or may be connected to the first amplifier for providing the first pilot signal. In addition, the control device may include or may be connected to the second amplifier for providing the second pilot signal. The first amplifier is configured to increase or decrease the first pilot signal using the first gain factor. In addition, the second amplifier is configured to increase or decrease the second pilot signal using the second gain factor.

[0030] Another embodiment of the method according to the present invention additionally or alternatively provides the use of the first guide signal as the second guide signal. In addition, another embodiment of the method according to the present invention additionally or alternatively provides that when the particle beam is guided along the second geometric shape and when the particle beam is guided along the first geometric shape, the first gain factor is constant, and the second gain factor is different. Alternatively, when the particle beam is guided along the second geometric shape and when the particle beam is guided along the first geometric shape, the second gain factor is constant, and the first gain factor is different. In particular, the aforementioned embodiment can be used when the first guide signal is used as the second guide signal.

[0031] Another embodiment of the method according to the present invention additionally or alternatively provides a control signal for controlling the objective lens according to (i) a first distance from the center point to the first geometric shape and (ii) a second distance from the center point to the second geometric shape. In particular, this embodiment of the method according to the present invention includes providing a first control signal to the objective lens of the particle beam device according to the first distance so that the particle beam is focused along the first geometric shape. In addition or alternatively, the method according to the present invention includes providing a second control signal to the objective lens of the particle beam device according to the second distance so that the particle beam is focused along the second geometric shape by the control device. In addition or alternatively, the method according to the present invention includes: (i) using an analog signal or a digital signal as the first control signal; and (ii) using an analog signal or a digital signal as the second control signal. The first control signal and / or the second control signal are used to further reduce or avoid spherical aberration. In particular, the first control signal can be used to refocus the particle beam to the first position. In another embodiment of the method according to the present invention, the first control signal in the form of a first analog signal can be used to refocus the particle beam to the first position. In addition, the second control signal can be used to refocus the particle beam to the second position. In another embodiment of the method according to the invention, a second control signal in the form of a second analog signal can be used to refocus the particle beam to a second position. Additionally or alternatively, a first control signal in the form of a first digital signal and / or a second control signal in the form of a second digital signal can be used to control a digital-to-analog converter for generating a focusing signal for an object lens of a particle beam device.

[0032] Embodiments of the method according to the present invention additionally or alternatively include at least one of the following: (i) using the second angle as the first angle; and (ii) using the fourth angle as the third angle. In other words, the first angle may be the same as the second angle. Furthermore, the third angle may be the same as the fourth angle.

[0033] Another embodiment of the method according to the present invention additionally or alternatively provides for performing a swinging beam method at at least one of the first positions and / or at least one of the second positions. In other words, at at least one of the first positions, when the particle beam is directed to the corresponding position in the first position, the first angle passes through a first predefined value range, and the second angle passes through a second predefined value range. Additionally or alternatively, at at least one of the second positions, when the particle beam is directed to the corresponding position in the second position, the third angle passes through a third predefined value range, and the fourth angle passes through a fourth predefined value range. Each of the aforementioned predefined value ranges may include an angle in the range of 0° to 90°, wherein the boundary value may be included in the aforementioned predefined value range. Another embodiment of the method according to the present invention additionally or alternatively provides for performing a swinging beam method at each of the first positions and / or at each of the second positions.

[0034] All the above and following embodiments of the method according to the present invention are not limited to the order of the method steps explained. The present invention also includes different orders of the method steps suitable for achieving the purpose of the present invention. Additionally or alternatively, the parallel execution of at least two method steps is also provided in the method according to the present invention. In addition, the above and following embodiments of the method according to the present invention are not limited to all of all the above or below method steps. In particular, it is intended to omit a single method step or several method steps in the above or below method steps in other embodiments.

[0035] The present invention also relates to a computer program product, which includes a program code that can be loaded or loaded into a processor of a particle beam device. The program code controls the particle beam device when executed in the processor to perform a method having at least one of the above or following features or a combination of at least two of the above or following features. In other words, the present invention also relates to a non-volatile computer-readable medium, which includes software that can be loaded or loaded into a processor of a particle beam device. The software controls the particle beam device when executed in the processor so as to perform a method having at least one of the above or following features or a combination of at least two of the above or following features. The software includes an executable code for performing at least one of the method steps explained above or below.

[0036] Therefore, the present invention also relates to a processor configured to perform a method having at least one of the above or following features or a combination of at least two of the above or following features.

[0037] The present invention further relates to a particle beam device for imaging, analyzing and / or processing an object, which has been explained above and will be further specifically described below. This point will be briefly summarized below. The particle beam device according to the present invention includes at least one beam generator for generating a particle beam including charged particles. The charged particles are, for example, electrons or ions. In addition, the particle beam device according to the present invention includes at least one first guiding device for guiding the particle beam and at least one second guiding device for guiding the particle beam. The first guiding device can be a first deflection device, such as a first magnetic deflection device and / or an electrostatic deflection device. The second guiding device can be a second deflection device, such as a second magnetic deflection device and / or an electrostatic deflection device. In addition, the particle beam device according to the present invention includes at least one control device, which is used to provide a first guidance signal to the first guidance device and a second guidance signal to the second guidance device, for guiding the particle beam. In addition, the particle beam device according to the present invention includes at least one first signal connection arranged between the control device and the first guidance device, and at least one second signal connection arranged between the control device and the second guidance device. The first signal connection and / or the second signal connection can be a physical connection (e.g., a connecting line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network). Additionally, the particle beam device according to the present invention comprises at least one processor, which is arranged in or on the control device and is loaded with a computer program product having the features mentioned above or below.

[0038] In an embodiment of the particle beam apparatus according to the invention, the particle beam apparatus additionally or alternatively comprises at least one scanning device for guiding the particle beam on the object, wherein the scanning device comprises a first guiding device and a second guiding device.

[0039] In another embodiment of the particle beam device according to the present invention, the particle beam device additionally or alternatively comprises at least one detector unit, and the at least one detector unit is used to detect the interaction particles and / or interaction radiation produced due to the interaction of the particle beam with the object when the particle beam hits the object. The interaction particles can be secondary electrons, backscattered electrons and / or secondary ions. The interaction radiation can be X-rays and / or cathode luminescence.

[0040] In another embodiment of the particle beam device according to the present invention, the particle beam device additionally or alternatively includes at least one object lens, and the at least one object lens is used to focus the particle beam on the object. For example, the first guiding device and / or the second guiding device are arranged in the object lens of the particle beam device. In particular, the first guiding device and / or the second guiding device can be arranged along the optical axis of the particle beam device in the object lens. For example, the first guiding device can be configured as a first electrostatic deflection device and / or a magnetic deflection device. In addition, the second guiding device can be configured as a second electrostatic deflection device and / or a magnetic deflection device.

[0041] In a further embodiment of the particle beam apparatus according to the invention, the particle beam apparatus additionally or alternatively comprises a first amplifier connected to the first guiding device and a second amplifier connected to the second guiding device.

[0042] In another embodiment of particle beam device according to the present invention, additionally or alternatively provide that beam generator is a first beam generator, and particle beam is a first particle beam with a first charged particle.Objective lens is a first objective lens for focusing the first particle beam on an object.In addition, particle beam device according to the present invention at least comprises a second beam generator for generating a second particle beam with a second charged particle.In addition, particle beam device according to the present invention at least comprises a second objective lens for focusing the second particle beam on an object.

[0043] In particular, it is provided that the particle beam device according to the invention is configured as an electron beam device and / or an ion beam device. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Further practical embodiments and advantages of the present invention are described below in conjunction with the following drawings:

[0045] Figure 1 A schematic diagram showing a first embodiment of a particle beam device according to the present invention is shown;

[0046] Figure 2 A schematic diagram showing a second embodiment of a particle beam device according to the present invention is shown;

[0047] Figure 3 A schematic diagram showing a third embodiment of a particle beam apparatus according to the present invention is shown;

[0048] Figure 4 A schematic diagram showing an embodiment of a movable object carrier;

[0049] Figure 5 Shown according to Figure 4 Another schematic diagram of an embodiment of a movable object carrier;

[0050] Figure 6A schematic diagram showing a sequence of a first embodiment of the method according to the present invention;

[0051] Figure 7 A schematic diagram showing a first geometric shape having a first position and a second geometric shape having a second position;

[0052] Figure 8 another schematic diagram showing a first geometric shape having a first position and a second geometric shape having a second position;

[0053] Fig. 9 a schematic diagram showing a control device connected to a unit of a particle beam apparatus; and

[0054] Fig.10 A schematic diagram showing a sequence of a second embodiment of the method according to the invention is shown. DETAILED DESCRIPTION

[0055] The invention will now be explained in more detail with the aid of a particle beam device in the form of a SEM and a particle beam device in the form of a combined device comprising an electron beam column and an ion beam column.It is expressly pointed out that the invention can be used for any particle beam device, in particular any electron beam device and / or any ion beam device.

[0056] Figure 1 A schematic diagram of a first embodiment of a particle beam device according to the present invention is shown, which is in the form of a SEM 100. The SEM 100 has a beam generator 1 with an electron source, an extraction electrode 2, a control electrode 3, and an anode 4. The anode 4 forms the source side end of a beam guide tube 21 of the SEM 100. The beam generator 1 is configured as, for example, a thermal field emitter. Alternatively, the beam generator 1 is configured as, for example, a hot tungsten emitter or a LAB6 emitter.

[0057] The electrons emitted from the beam generator 1 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between the beam generator 1 and the anode 4. For example, the potential of the anode 4 is positive 1 kV to 30 kV relative to the potential of the beam generator 1, so that the electrons have a kinetic energy in the range between 1 keV and 30 keV.

[0058] Starting from the anode 4 and viewed along the optical axis 20 in the direction of the objective 10, the SEM 100 has a first condenser lens 5 in front and a second condenser lens 6 in the rear. An aperture unit 7 is arranged in the beam guide tube 21 between the first condenser lens 5 and the second condenser lens 6. Figure 1 In the illustrated SEM 100, the objective lens 10 is configured as a magnetic lens having a pole shoe 22 with a pole shoe gap 23. A toroidal coil 11 is arranged in the pole shoe 22 for generating a magnetic field of the objective lens 10.

[0059] Starting from the second condenser lens 6 and viewed in the direction of the objective 10, a guide device in the form of a deflection device is arranged along the optical axis 20 of the SEM 100, which has a first guide device in the form of a first deflection device 9 and a second guide device in the form of a second deflection device 12. The first deflection device 9 is arranged on the source side of the objective 10. On the other hand, the second deflection device 12 is arranged inside the objective 10 on the object side, on the beam guide tube 21. The first deflection device 9 and the second deflection device 12 are cross-deflection devices. In other words, both the first deflection device 9 and the second deflection device 12 are configured to deflect the primary electron beam in two non-parallel directions aligned perpendicular to the direction of the optical axis 20. For example, the first deflection device 9 and / or the second deflection device 12 are magnetic deflection devices. In particular, the first deflection device 9 and / or the second deflection device 12 have, for example, four air coils arranged around the optical axis 20 of the SEM 100. Additionally or alternatively, the first deflection device 9 and / or the second deflection device 12 is an electrostatic deflection device. In particular, the first deflection device 9 and / or the second deflection device 12 has, for example, four electrodes arranged around the optical axis 20 of the SEM 100, to which different electrostatic potentials can be applied.

[0060] The objective lens 10 is arranged on the object chamber 13. In particular, the objective lens 10 protrudes into the inner space of the object chamber 13 through the opening of the object chamber 13. A movable object stage 19 is arranged in the inner space of the object chamber 13. The object 15 can be arranged on the object stage 19.

[0061] Using the objective lens 10, the primary electron beam generated by the beam generator 1 and formed using the first condenser lens 5 and / or the second condenser lens 6 is focused on the object plane 16. Appropriate excitation of the first deflection device 9 and the second deflection device 12 ensures that the primary electron beam can be deflected perpendicularly to the optical axis 20 of the SEM 100 on the object plane 16, so that the surface of the object 15 arranged on the object plane 16 can be scanned by different deflections of the primary electron beam. The electrons of the primary electron beam interact with the object 15. As a result of the interaction, electrons (so-called secondary electrons) are emitted from the object 15, and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for image generation. Thus, an image of the object 15 to be examined is obtained. In addition, interaction radiation (such as X-rays or cathode luminescence) is generated during the interaction, which is detected and subsequently evaluated to analyze the object 15.

[0062] For detecting the aforementioned interacting particles and / or the aforementioned interacting radiation, for example, a first detector unit 14 is arranged in the object chamber 13. Additionally or alternatively, for example, a second detector unit 8 for detecting the aforementioned interacting particles is arranged in the beam guide tube 21 in the region between the first deflection device 9 and the second condenser lens 6.

[0063] exist Figure 1 In the illustrated embodiment of the SEM 100, a pressure stage aperture holder 17 is provided, which can be arranged on a pole piece 22 of the objective 10 protruding into the object chamber 13. The pressure stage aperture holder 17 has a pressure stage aperture with an aperture 18. For example, further pressure stage aperture units can be arranged in the beam guide tube 21 of the SEM 100. These are Figure 1 Not shown. Figure 1 Also not shown are vacuum pumps that are desirable to create and maintain a vacuum within the beam guide tubes 21 and the object chamber 13 and to operate the SEM 100 .

[0064] If the SEM 100 is operated under high vacuum in the object chamber 13, the pressure stage aperture holder 17 is not necessary and can therefore be removed from the pole piece 22 of the objective lens 10. On the other hand, if the SEM 100 is operated at a relatively high pressure (a pressure in the range of about 1 Pa to 3000 Pa) in the object chamber 13, the pressure stage aperture holder 17 can be mounted on the pole piece 22 of the objective lens 10, so that despite the higher pressure in the object chamber 13, a sufficiently good vacuum can be maintained in the beam guide tube 21 by differential pumping.

[0065] In particular, the first detector unit 14, the second detector unit 8, the first deflection device 9 and the second deflection device 12 are connected to a control device 123, which includes a monitor 124. In particular, the first deflection device 9 is connected to the control device 123 via a first signal connection 800. The first signal connection 800 can be a physical connection (e.g. a connection line) and / or a wireless connection (e.g. a radio communication system and / or a wireless local area network). The second deflection device 12 is connected to the control device 123 via a second signal connection 801. The second signal connection 801 can be a physical connection (e.g. a connection line) and / or a wireless connection (e.g. a radio communication system and / or a wireless local area network). The control device 123 processes the detection signals generated by the first detector unit 14 and by the second detector unit 8 and displays these detection signals in the form of an image on the monitor 124. The control device 123 further includes a database 126, in which data are stored and from which data are read. In addition, the control device 123 is connected to further units of the SEM 100. This is in Figure 1 Not further shown.

[0066] The control device 123 of the SEM 100 comprises a processor 127. A computer program product comprising a program code is loaded into the processor 127. The program code, when executed, performs a method for operating the SEM 100. This will be explained in more detail below.

[0067] In the SEM 100, the distance A can be set using the control device 123 of the SEM 100. The distance A is given by: (a) the object distance between the outer boundary of the objective lens 10 of the SEM 100 and the object 15; or (b) the focal plane distance between the outer boundary of the objective lens 10 of the SEM 100 and the focal plane of the objective lens 10. The aforementioned distance A according to the case (a) or the case (b) is also called the working distance. For example, the distance A in the case (a) is set by moving the object stage 19 and / or moving the objective lens 10 using the moving device 25. In particular, the distance A in the case (b) is adjusted by changing the excitation of the objective lens 10 along the optical axis 20 of the SEM 100.

[0068] Figure 2 A schematic diagram of another SEM 100 is shown. The other SEM 100 has a first beam generator in the form of an electron source 101, which is configured as a cathode. In addition, the other SEM 100 is provided with an extraction electrode 102 and an anode 103, which is placed on one end of a beam guide tube 104 of the other SEM 100. For example, the electron source 101 is configured as a thermal field emitter. However, the present invention is not limited to such an electron source 101. Instead, any electron source suitable for the present invention can be used.

[0069] The electrons emitted from the electron source 101 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between the electron source 101 and the anode 103. In the embodiment shown here, the anode potential is 100 V to 35 kV, for example 5 kV to 15 kV, in particular 8 kV, relative to the ground potential of the housing of the object chamber 120. However, alternatively, the anode potential can be at the ground potential.

[0070] Two condenser lenses are arranged on the beam guide tube 104, namely a first condenser lens 105 and a second condenser lens 106. Starting from the electron source 101 and viewed in the direction of the first objective lens 107, the first condenser lens 105 is arranged first, followed by the second condenser lens 106. It is explicitly pointed out that further embodiments of another SEM 100 can have only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. The first aperture unit 108 is at a high voltage potential (i.e. the potential of the anode 103) or ground potential together with the anode 103 and the beam guide tube 104. The first aperture unit 108 has a plurality of first apertures 108A, which are arranged at Figure 2One of them is shown in the figure. For example, there are two first apertures 108A. Each of the multiple first apertures 108A has a different aperture diameter. Using an adjustment mechanism (not shown), the desired first aperture 108A can be adjusted to the optical axis OA of another SEM 100. It is explicitly pointed out that the first aperture unit 108 of another embodiment may be provided with only a single first aperture 108A. In this embodiment, the adjustment mechanism may not be provided, and the first aperture unit 108 is configured in a fixed manner. A fixed second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, the second aperture unit 109 may be movable.

[0071] The first objective 107 has pole shoes 110 which have holes through which the beam guide tube 104 is guided. A coil 111 is arranged in the pole shoe 110 .

[0072] An electrostatic deceleration system is arranged in the lower region of the beam guide tube 104. The electrostatic deceleration system has a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged at the end of the beam guide tube 104 which faces the object 125 arranged at the movable object holder 114.

[0073] The tubular electrode 113 together with the beam guide tube 104 is at the potential of the anode 103, while the single electrode 112 and the object 125 are at a potential lower than the potential of the anode 103. In the present case, this is the ground potential of the housing of the object chamber 120. In this way, the electrons of the primary electron beam can be decelerated to the desired energy desired for the examination of the object 125.

[0074] The object 125 and the single electrode 112 may also be at different potentials and at a potential different from ground potential. This makes it possible to adjust the position of the deceleration of the primary electron beam relative to the object 125. For example, if the deceleration is performed very close to the object 125, the imaging error becomes smaller.

[0075] The other SEM 100 further comprises a guiding system in the form of a deflection device, which comprises a first guiding device in the form of a first deflection device 130 and comprises a second guiding device in the form of a second deflection device 115. The first deflection device 130 is arranged on the source side within the first objective 107. On the other hand, the second deflection device 115 is arranged on the object side within the first objective 107, on the beam guide tube 104. The first deflection device 130 and the second deflection device 115 are cross-deflection devices. In other words, both the first deflection device 130 and the second deflection device 115 are configured to deflect the primary electron beam in two non-parallel directions aligned in a direction perpendicular to the optical axis OA of the other SEM 100. For example, the first deflection device 130 and / or the second deflection device 115 are magnetic deflection devices. In particular, the first deflection device 130 and / or the second deflection device 115 have, for example, four air coils arranged around the optical axis OA of the other SEM 100. Additionally or alternatively, it is provided that the first deflection device 130 and / or the second deflection device 115 are electrostatic deflection devices. In particular, the first deflection device 130 and / or the second deflection device 115 have, for example, four electrodes arranged around the optical axis OA of the SEM 100, to which different electrostatic potentials can be applied. By means of the first deflection device 130 and the second deflection device 115, the primary electron beam is deflected and can be scanned over the object 125. The electrons of the primary electron beam interact with the object 125. Due to the interaction, interaction particles are generated, which are detected. In particular, electrons are emitted as interaction particles from the surface of the object 125 (so-called secondary electrons), or electrons of the primary electron beam are backscattered (so-called backscattered electrons).

[0076] A detector system is arranged in the beam guide tube 104, which includes a first detector 116 and a second detector 117 for detecting secondary electrons and / or backscattered electrons. The first detector 116 is arranged on the source side along the optical axis OA, while the second detector 117 is arranged on the object side along the optical axis OA in the beam guide tube 104. The first detector 116 and the second detector 117 are offset from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 have an opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guide tube 104, and the optical axis OA of the SEM 100 passes through the respective openings.

[0077] The second detector 117 is mainly used to detect secondary electrons. The secondary electrons initially have low kinetic energy and an arbitrary direction of movement when they emerge from the object 125. Due to the strong extraction field emitted from the tubular electrode 113, the secondary electrons are accelerated toward the first objective lens 107. The secondary electrons enter the first objective lens 107 in an approximately parallel manner. In the first objective lens 107, the beam diameter of the secondary electron beam is kept small. The first objective lens 107 strongly acts on the secondary electrons, thereby producing a relatively short focusing of the secondary electrons with the optical axis OA at a sufficiently steep angle, so that the secondary electrons travel separately after the focus and hit the second detector 117 on the effective surface of the second detector. In contrast, the electrons backscattered from the object 125 (i.e., backscattered electrons, which have a relatively high kinetic energy compared to the secondary electrons when they emerge from the object 125) are detected by the second detector 117 only to a small extent. The high kinetic energy of the backscattered electrons when they emerge from the object 125 and the angle relative to the optical axis OA make the beam waist (i.e., the beam area with the smallest diameter) of the backscattered electrons located near the second detector 117. Most of the backscattered electrons pass through the opening of the second detector 117. Therefore, the first detector 116 is basically used to detect the backscattered electrons.

[0078] In another embodiment of another SEM 100, the first detector 116 may additionally include a reverse field grid 116A. The reverse field grid 116A is arranged on a side of the first detector 116 facing the object 125. The reverse field grid 116A has a negative potential relative to the potential of the beam guide tube 104, so that only backscattered electrons with high kinetic energy pass through the reverse field grid 116A to reach the first detector 116. Additionally or alternatively, the second detector 117 includes another reverse field grid that is designed in the same manner as the aforementioned reverse field grid 116A of the first detector 116 and has a similar function.

[0079] Furthermore, another SEM 100 includes a chamber detector 119 (eg, an Everhart-Thornley detector or an ion detector) in an object chamber 120 , which may include a detection surface coated with a light-blocking metal.

[0080] The detection signals generated by the first detector 116 , the second detector 117 , and the chamber detector 119 are used to generate one or more images of the surface of the object 125 .

[0081] It is explicitly pointed out that the apertures of the first aperture unit 108 and the second aperture unit 109 and the openings of the first detector 116 and the second detector 117 are shown in an exaggerated manner. The openings of the first detector 116 and the second detector 117 have an extent in the range of 0.5 mm to 5 mm perpendicular to the optical axis OA. For example, these openings are circular in shape and have a diameter in the range of 1 mm to 3 mm perpendicular to the optical axis OA.

[0082] In the embodiment shown here, the second aperture unit 109 is configured as a pinhole aperture unit and is provided with a second aperture 118 for the primary electron beam to pass through. The extension range of the second aperture 118 is in the range of 5 µm to 500 µm, for example 35 µm. Alternatively, in another embodiment, it is provided that the second aperture unit 109 is provided with a plurality of apertures, which can be mechanically displaced relative to the primary electron beam, or the primary electron beam can be made to reach these apertures using electric and / or magnetic deflection elements. The second aperture unit 109 can be a pressure-level aperture. This separates a first region, in which the electron source 101 is arranged and an ultra-high vacuum (10 -7 hPa to 10 -12 hPa), the second region has a high vacuum (10 -3 hPa to 10 -7 hPa). The second region is an intermediate pressure region of the beam guide tube 104 , which opens into the object chamber 120 .

[0083] The object chamber 120 is in a vacuum state. A pump (not shown) is arranged at the object chamber 120 to generate a vacuum. Figure 2 In the illustrated embodiment, the object chamber 120 operates within a first pressure range or within a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 The object chamber 120 is vacuum sealed to ensure these pressure ranges.

[0084] The object holder 114 is arranged on the object stage 122. The object stage 122 is configured to be movable in three mutually perpendicular directions, i.e., in the x-direction (first stage axis), the y-direction (second stage axis) and the z-direction (third stage axis). In addition, the object stage 122 can rotate around two mutually perpendicularly arranged rotation axes (stage rotation axes). The present invention is not limited to the object stage 122 described above. Rather, the object stage 122 may have additional translation axes and additional rotation axes along or around which the object stage 122 can move.

[0085] The other SEM 100 further includes a third detector 121 arranged in the object chamber 120. In particular, as viewed along the optical axis OA from the electron source 101, the third detector 121 is arranged behind the object stage 122. The object stage 122 and therefore the object holder 114 can be rotated so that the primary electron beam can impinge on an object 125 arranged on the object holder 114. When the primary electron beam passes through the object 125 to be inspected, the electrons of the primary electron beam interact with the material of the object 125 to be inspected. The third detector 121 detects the electrons that pass through the object 125 to be inspected.

[0086] A radiation detector 500 is arranged at the object chamber 120 for detecting interaction radiation (e.g., X-rays and / or cathode luminescence) generated when the primary electron beam impinges on the object 125. The radiation detector 500, the first detector 116, the second detector 117, and the chamber detector 119 are connected to a control device 123, which includes a monitor 124. The third detector 121 is also connected to the control device 123. For the sake of clarity, this is not shown. The control device 123 processes the detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, the third detector 121, and / or the radiation detector 500, and displays these detection signals on the monitor 124 in the form of an image.

[0087] The first deflection device 130 and the second deflection device 115 are connected to the control device 123. In particular, the first deflection device 130 is connected to the control device 123 via a first signal connection 800. The first signal connection 800 can be a physical connection (e.g., a connection line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network). The second deflection device 115 is connected to the control device 123 via a second signal connection 801. The second signal connection 801 can be a physical connection (e.g., a connection line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network).

[0088] The control device 123 further comprises a database 126 in which data are stored and from which data are read. Furthermore, the control device 123 is connected to further units of another SEM 100. For the sake of clarity, this is not shown in more detail.

[0089] The control device 123 of the further SEM 100 comprises a processor 127. A computer program product comprising a program code is loaded into the processor 127. When the program code is executed, a method for operating the further SEM 100 is performed. This will be explained in more detail below.

[0090] In another SEM 100, the distance A can be set using the control device 123 of the other SEM 100. The distance A is given by: (a) the object distance between the single electrode 112 of the other SEM 100 and the object 125; or (b) the focal plane distance between the single electrode 112 of the other SEM 100 and the focal plane of the first objective lens 107. The aforementioned distance A according to the case (a) or the case (b) is also called the working distance. For example, the distance A in the case (a) is set by moving the object stage 122 and / or moving the first objective lens 107 using the moving device 25. For example, in the case (b), the distance A is set by changing the excitation of the first objective lens 107 along the optical axis OA of the other SEM 100.

[0091] Figure 3 A particle beam device in the form of a combined device 200 is shown. The combined device 200 has two particle beam columns. On the one hand, the combined device 200 has a particle beam column as already described. Figure 2 Another SEM 100 is shown, but without the object chamber 120. Instead, the other SEM 100 is arranged at the object chamber 201. The object chamber 201 is in a vacuum. A pump (not shown) is arranged at the object chamber 201 to generate a vacuum. Figure 3 In the illustrated embodiment, the object chamber 201 operates within a first pressure range or within a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 The object chamber 201 is vacuum-sealed to ensure these pressure ranges.

[0092] The chamber detector 119 is arranged in the object chamber 201. The chamber detector 119 is configured as, for example, an Everhart-Thornley detector or an ion detector. The chamber detector 119 may have a detection surface coated with a metal that blocks light. In addition, a third detector 121 is arranged in the object chamber 201.

[0093] The other SEM 100 generates a first particle beam (ie, the primary electron beam described above) and has an optical axis as mentioned above, which is located at Figure 3 709 and is referred to as the first beam axis in the following. Secondly, the combined device 200 is provided with an ion beam device 300, which is also arranged at the object chamber 201. The ion beam device 300 also has an optical axis, which is at Figure 3 A reference numeral 710 is provided in the figure and is referred to as the second beam axis hereinafter.

[0094] The other SEM 100 is arranged vertically relative to the object chamber 201. In contrast, the ion beam device 300 is arranged in a manner inclined at an angle of about 0° to 90° relative to the SEM 100. Figure 3 , an arrangement of about 50° is shown. The ion beam device 300 includes a second beam generator in the form of an ion beam generator 301. The ion beam generator 301 is used to generate ions, which form a second particle beam in the form of an ion beam. These ions are accelerated by means of an extraction electrode 302 at a predeterminable potential. Then, the second particle beam passes through the ion optical device of the ion beam device 300, which includes a bunching lens 303 and a second objective lens 304. Finally, the second objective lens 304 generates an ion probe, which is focused on an object 125 arranged on an object holder 114. The object holder 114 is arranged on an object carrier 122.

[0095] An adjustable or selectable aperture unit 306 and a guidance system are arranged above the second objective 304 (i.e. in the direction of the ion beam generator 301). The guidance system comprises a first guidance device in the form of a first deflection device 307 and a second guidance device in the form of a second deflection device 308. The first deflection device 307 is arranged on the source side inside the second objective 304. On the other hand, the second deflection device 308 is arranged on the object side inside the second objective 304. The first deflection device 307 and the second deflection device 308 are cross-deflection devices. In other words, both the first deflection device 307 and the second deflection device 308 are configured to deflect the ion beam in two non-parallel directions aligned perpendicular to the direction of the optical axis in the form of a second beam axis 710 of the ion beam device 300. For example, the first deflection device 307 and / or the second deflection device 308 are magnetic deflection devices. In particular, the first deflection device 307 and / or the second deflection device 308 may have, for example, four air coils arranged around an optical axis in the form of a second beam axis 710 of the ion beam device 300. Additionally or alternatively, the first deflection device 307 and / or the second deflection device 308 are electrostatic deflection devices. In particular, the first deflection device 307 and / or the second deflection device 308 may have, for example, four electrodes arranged around an optical axis in the form of a second beam axis 710 of the ion beam device 300, to which different electrostatic potentials may be applied. Using the first deflection device 307 and the second deflection device 308, the ion beam is deflected and can be scanned over the object 125.

[0096] As explained above, the object holder 114 is arranged on the object carrier 122. Figure 3In the illustrated embodiment, the object stage 122 is configured to move in three mutually perpendicular directions, namely, in the x-direction (first stage axis), the y-direction (second stage axis) and the z-direction (third stage axis). In addition, the object stage 122 can rotate around two rotation axes (stage rotation axes) arranged perpendicular to each other.

[0097] In order to better illustrate the various units of the combined device 200, Figure 3 The distances between the individual elements of the illustrated combined device 200 are shown in an exaggerated manner.

[0098] A radiation detector 500 is arranged at the object chamber 201 for detecting interaction radiation (eg X-rays and / or cathodoluminescence). The radiation detector 500 is connected to a control device 123 which includes a monitor 124.

[0099] The control device 123 processes the first detector 116 ( Figure 3 Not shown), the second detector 117 ( Figure 3 ), detection signals generated by the chamber detector 119, the third detector 121 and / or the radiation detector 500, and these detection signals are displayed on the monitor 124 in the form of images.

[0100] The control device 123 further comprises a database 126 in which data are stored and from which data are read. Furthermore, the control device 123 is connected to the first deflection device 130 ( Figure 3 ) and is connected to the second deflection device 115 ( Figure 3 Additionally, the control device 123 is connected to the first deflection device 307 via a first signal connection and to the second deflection device 308 via a second signal connection.

[0101] The control means 123 of the combined device 200 comprises a processor 127. A computer program product with a program code is loaded into the processor 127. When the program code is executed, a method for operating the combined device 200 is performed. This will be explained in more detail below.

[0102] The working distance can also be set in the combined device 200. For example, in the other SEM 100, the distance A1 can be set using the control device 123. The distance A1 is given by: (a) the object distance between the outer boundary of the first objective lens 107 of the other SEM 100 and the object 125; or (b) the focal plane distance between the outer boundary of the first objective lens 107 of the other SEM 100 and the focal plane of the first objective lens 107. The aforementioned distance A1 according to the case (a) or the case (b) is also called the working distance. For example, the distance A1 in the case (a) is set by moving the object stage 122 and / or moving the first objective lens 107 using the moving device 25. For example, in the case (b), the distance A1 is adjusted by changing the excitation of the first objective lens 107 along the first beam axis 709 of the other SEM 100. Further, the distance A2 can be adjusted using the control device 123. The distance A2 is given by: (a) the object distance between the outer boundary of the second objective lens 304 of the ion beam device 300 and the object 125; or (b) the focal plane distance between the outer boundary of the second objective lens 304 of the ion beam device 300 and the focal plane of the second objective lens 304. The aforementioned distance A2 according to the case (a) or the case (b) is also called the working distance. For example, the distance A2 in the case (a) is set by moving the object stage 122 and / or moving the second objective lens 304 using the moving device 25. For example, in the case (b), the distance A2 is adjusted by changing the excitation of the second objective lens 304 along the second beam axis 710 of the ion beam device 300.

[0103] This will now be discussed in more detail below. Figure 2 Another SEM 100 and Figure 3 The object carrier 122 of the combined device 200 is shown. The object carrier 122 is configured to Figure 4 and Figure 5 The following explanations apply accordingly to the movable object carrier according to Figure 1 The object stage 19 of the SEM 100 is provided.

[0104] It should be noted that the present invention is not limited to the object carrier 122 described herein. Rather, the present invention may include any movable object carrier suitable for the present invention.

[0105] The object holder 114 is arranged on an object carrier 122. The object carrier 122 has movement elements which ensure the movement of the object carrier 122 so that a region of interest on the object 125 can be examined, for example using a particle beam. Figure 4 and Figure 5 The moving elements are schematically shown in FIG. 1 and will be explained below.

[0106] The object carrier 122 has a first motion element 600, for example, arranged on a housing 601 of an object chamber 120 or 201, in which the object carrier 122 is arranged. The first motion element 600 enables the movement of the object carrier 122 along the z-axis (third carrier axis). In addition, a second motion element 602 is provided. The second motion element 602 enables the rotation of the object carrier 122 around a first carrier rotation axis 603 (also called tilt axis). This second motion element 602 is used to tilt the object 125 around the first carrier rotation axis 603, wherein the object 125 is arranged on the object holder 114.

[0107] On the second movement element 602, a third movement element 604 is arranged, which is formed as a guide for the carriage and ensures that the object carrier 122 can be moved in the x direction (first stage axis). The aforementioned carriage is in turn another movement element, namely the fourth movement element 605. The fourth movement element 605 is configured so that the object carrier 122 can be moved in the y direction (second stage axis). For this purpose, the fourth movement element 605 has a guide, in which another carriage is guided, on which the object holder 114 is arranged. The object holder 114 has a fifth movement element 606, which makes it possible to rotate the object holder 114 around the second stage rotation axis 607. The second stage rotation axis 607 is oriented perpendicular to the first stage rotation axis 603.

[0108] Based on the above arrangement, the object carrier 122 of the embodiment discussed in this article has the following motion chain: a first motion element 600 (moving along the z-axis) - a second motion element 602 (rotating around the first carrier rotation axis 603) - a third motion element 604 (moving along the x-axis) - a fourth motion element 605 (moving along the y-axis) - a fifth motion element 606 (rotating around the second carrier rotation axis 607).

[0109] In another embodiment (not shown), it is intended that further movement elements are arranged on the object carrier 122 , such that a movement along further translation axes and / or about further rotation axes is possible.

[0110] like Figure 5As shown, each of the aforementioned moving elements is connected to a driving unit M1 to M5 in the form of a motor. The first moving element 600 is connected to the first driving unit M1, and is driven based on the driving force provided by the first driving unit M1. The second moving element 602 is connected to the second driving unit M2, which drives the second moving element 602. The third moving element 604 is connected to the third driving unit M3. The third driving unit M3 provides a driving force for driving the third moving element 604. The fourth moving element 605 is connected to the fourth driving unit M4, wherein the fourth driving unit M4 drives the fourth moving element 605. In addition, the fifth moving element 606 is connected to the fifth driving unit M5. The fifth driving unit M5 provides a driving force for driving the fifth moving element 606.

[0111] The aforementioned drive units M1 to M5 may be configured as stepper motors, for example, and controlled by the drive control unit 608. Each drive unit M1 to M5 may be supplied with power current (eg, Figure 5 ). It is explicitly pointed out that the invention is not limited to movement by means of a stepper motor. Rather, any drive unit suitable for the invention can be used as drive unit, for example a brushless motor.

[0112] In the following, we will discuss Figure 1 The method according to the invention can also be used according to the SEM 100. Figure 2 Another SEM 100 and / or according to Figure 3 The combined device 200 is used to perform.

[0113] Figure 6 Schematic diagram showing a sequence of a first embodiment of the method according to the invention.The method according to the invention is used to operate a SEM 100 .

[0114] Method step S1 comprises generating a primary electron beam using a beam generator 1 of the SEM 100. Method step S2 comprises directing the primary electron beam to the object 15. In particular, the primary electron beam is directed away from the optical axis 20 at a first angle relative to the optical axis 20 of the SEM 100 using the first deflection device 9. In addition, the primary electron beam is directed using the second deflection device 12, wherein the primary electron beam is directed to the optical axis 20 at a second angle relative to the optical axis 20, so that the primary electron beam is directed to a first position on the surface of the object 15. The first position is arranged along a first geometric shape on the surface of the object 15. The first geometric shape can be any geometric shape. Method step S3 comprises directing the primary electron beam to the object 15. In particular, the primary electron beam is directed away from the optical axis 20 at a third angle relative to the optical axis 20 of the SEM 100 using the first deflection device 9. Furthermore, the primary electron beam is guided using the second deflection device 12, wherein the primary electron beam is guided to the optical axis 20 at a fourth angle relative to the optical axis 20 such that the primary electron beam is guided to a second location on the surface of the object 15. The second location is arranged along a second geometric shape on the surface of the object 15. The second geometric shape may be any geometric shape.

[0115] Method step S4 provides a first guidance signal for guiding the primary electron beam using the control device 123 of the SEM 100. The first guidance signal is provided by the control device 123 to the first deflection device 9 using a first signal connection 800 between the control device 123 and the first deflection device 9. As described above, the first signal connection 800 may be a physical connection (e.g., a connection line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network).

[0116] Method step S5 provides a second guidance signal for guiding the primary electron beam using the control device 123 of the SEM 100. The second guidance signal is provided by the control device 123 to the second deflection device 12 using a second signal connection 801 between the control device 123 and the second deflection device 12. As described above, the second signal connection 801 may be a physical connection (e.g., a connection line) and / or a wireless connection (e.g., a radio communication system and / or a wireless local area network).

[0117] In order to guide the primary electron beam to the first geometric shape, a first guide signal and a second guide signal are provided according to a first distance from a center point arranged on the surface of the object 15 to the first geometric shape. The first guide signal and the second guide signal are used to guide the primary electron beam along the first geometric shape. The first distance can be a distance from the center point to one of the first positions arranged on the first geometric shape. For example, the distance can be the shortest distance among all distances from the center point to the first position arranged on the first geometric shape.

[0118] In order to guide the primary electron beam to the second geometric shape, a first guide signal and a second guide signal are provided according to a second distance from a center point arranged on the surface of the object 15 to the second geometric shape. The first guide signal and the second guide signal are used to guide the primary electron beam along the second geometric shape. The second distance can be a distance from the center point to one of the second positions arranged on the second geometric shape. For example, the distance can be the shortest distance among all distances from the center point to the second position arranged on the second geometric shape.

[0119] According to the invention, directing the primary electron beam along the first geometry and / or along the second geometry is faster in terms of time than directing the primary electron beam from the first geometry to the second geometry.

[0120] Method step S6 comprises imaging, analyzing and / or processing the object 15 at the first location and / or the second location using the primary electron beam. Reference also applies here to the previous explanations.

[0121] Embodiments of the method according to the invention use a circular shape or a complete circle as the first geometric shape and / or the second geometric shape. Figure 7 An embodiment of a first geometric shape and a second geometric shape is shown. Reference numeral 900 denotes a first geometric shape in the form of a first complete circle. Reference numeral 901 denotes a second geometric shape in the form of a second complete circle. First positions FP11 to FP110 are arranged along the first geometric shape 900 on the surface 902 of the object 15. It is explicitly pointed out that the number of first positions arranged along the first geometric shape 900 is not limited to the first positions FP11 to FP110. Instead, any number of first positions suitable for the present invention can be used. Second positions FP21 to FP210 are arranged along the second geometric shape 901 on the surface 902 of the object 15. It is explicitly pointed out that the number of second positions arranged along the second geometric shape 901 is not limited to the second positions FP21 to FP210. Instead, any number of second positions suitable for the present invention can be used. The first geometric shape 900 is determined by (i) a center point CP arranged on the surface 902 of the object 15 and (ii) a first radius R1 extending from the center point CP along the surface 902 of the object 15. The second geometric shape 901 is defined by a center point CP and a second radius R2 extending from the center point CP along a surface 902 of the object 15 .

[0122] For a first geometric shape 900 in the form of a first complete circle, method steps S4 and S5 include providing a first guide signal and a second guide signal according to a first radius R1 to guide the primary electron beam along the first geometric shape 900. For a second geometric shape 901 in the form of a second complete circle, method steps S4 and S5 include providing a first guide signal and a second guide signal according to a second radius R2 to guide the primary electron beam along the second geometric shape 901.

[0123] As mentioned above, the first geometric shape 900 and the second geometric shape 901 may be any geometric shapes. Therefore, another embodiment of the method according to the present invention additionally or alternatively comprises: (i) using a polygon as the first geometric shape 900; and (ii) using a polygon as the second geometric shape 901. Figure 8 Such an embodiment of a first geometric shape and a second geometric shape is shown. Reference numeral 900A denotes a first geometric shape in the form of a first polygon (e.g., a square). Reference numeral 901A denotes a second geometric shape in the form of a second polygon (e.g., a square). First positions FP11 to FP14 are arranged along the first geometric shape 900A on the surface 902 of the object 15. It is explicitly noted that the number of first positions arranged along the first geometric shape 900A is not limited to the first positions FP11 to FP14. Instead, any number of first positions suitable for the present invention can be used. Second positions FP21 to FP24 are arranged along the second geometric shape 901A on the surface 902 of the object 15. It is explicitly noted that the number of second positions arranged along the second geometric shape 901A is not limited to the second positions FP21 to FP24. Instead, any number of second positions suitable for the present invention can be used. The first geometric shape 900A is determined by (i) a center point CP arranged on the surface 902 of the object 15 and (ii) a first distance D1 between the center point CP and one of the first positions FP11 to FP14 (e.g., the first position FP14). The second geometric shape 901A is defined by (i) a center point CP disposed on the surface 902 of the object 15 and (ii) a second distance D2 extending from the center point CP to one of the second positions FP21 to FP24 (eg, FP24).

[0124] Fig. 9 Shown according to Figure 1Schematic diagram of a control device 123 of a SEM 100. The control device 123 is connected to a first amplifier 803 using a first signal connection 800. The first amplifier 803 is also connected to a first deflection device 9 using the first signal connection 800. Furthermore, the control device 123 is connected to a second amplifier 804 using a second signal connection 801. The second amplifier 804 is also connected to a second deflection device 12 using the second signal connection 801. Additionally, the control device 123 is connected to the objective lens 10 using a third signal connection 802. The first signal connection 800, the second signal connection 801 and / or the third signal connection 802 may be physical connections (e.g., connection lines) and / or wireless connections (e.g., a radio communication system and / or a wireless local area network).

[0125] As described above, the first pilot signal and the second pilot signal are provided by the control device 123. Fig. 9 As shown, the control device 123 is connected to a first amplifier 803 for providing a first pilot signal to the first deflection device 9. The first amplifier 803 is configured to increase or decrease the first pilot signal using a first gain factor. In addition, the control device 123 is connected to a second amplifier 804 for providing a second pilot signal to the second deflection device 12. The second amplifier 804 is configured to increase or decrease the second pilot signal using a second gain factor.

[0126] As shown in the figure, in particular, Figure 7 , the first radius R1 is smaller than the second radius R2. The ratio of the first gain factor to the second gain factor when directing the primary electron beam along the second geometric shape 901 is higher than the ratio of the first gain factor to the second gain factor when directing the primary electron beam along the first geometric shape 900. The aforementioned gain factors are selected according to the first radius R1 and the second radius R2.

[0127] Another embodiment of the method according to the present invention additionally or alternatively provides for using the first guide signal as the second guide signal. Furthermore, another embodiment of the method according to the present invention additionally or alternatively provides that when guiding the primary electron beam along the second geometric shape 901 and when guiding the primary electron beam along the first geometric shape 900, the first gain factor is constant, while the second gain factor is different. Alternatively, when guiding the primary electron beam along the second geometric shape 901 and when guiding the primary electron beam along the first geometric shape 900, the second gain factor is constant, while the first gain factor is different. In particular, the aforementioned embodiments can be used when the first guide signal is used as the second guide signal.

[0128] like Fig. 9 As shown, the control device 123 is connected to the objective lens 10 using the third signal connection 802. Another embodiment of the method according to the invention can be performed by having Fig. 9Another embodiment of the method according to the present invention is performed by the SEM 100 of the embodiment shown. Fig.10 Shown in. Fig.10 A further embodiment of the method according to the invention is shown based on Figure 6 The embodiment of the method according to the invention is shown. Reference is made to the explanations given above, which also apply here. Figure 6 Compared with the embodiment of Fig.10 The embodiment has additional method steps, namely method steps S5A and S5B. For example, method steps S5A and S5B are performed after method step S5 and before method step S6. In method steps S5A and S5B, control signals are provided, which are used to control the objective lens 10 according to (i) a first distance of the center point CP to the first geometric shape 900 and (ii) a second distance of the center point CP to the second geometric shape 901. For example, the first distance is the first radius R1, and the second distance is the second radius R2 (see Figure 7 ). Alternatively, the first distance may be a first distance D1, and the second distance may be a second distance D2 (see Figure 8 ). In particular, in method step S5A, the control device 123 provides a first control signal to the objective lens 10, wherein the first control signal depends on the first distance. The first control signal is used to focus the primary electron beam along the first geometric shape 900 or 900A. In addition, in method step S5B, the control device 123 provides a second control signal to the objective lens 10, wherein the second control signal depends on the second distance. The second control signal is used to focus the primary electron beam along the second geometric shape 901 or 901A. In addition, Fig.10 Embodiments of the method shown may include (i) using an analog signal or a digital signal as a first control signal; and (ii) using an analog signal or a digital signal as a second control signal. The first control signal and / or the second control signal are used to further reduce or avoid spherical aberration. In particular, the first control signal may be used to refocus the primary electron beam to a first position FP11 to FP110 (e.g., Figure 7 ) or FP11 to FP14 (as shown Figure 8 ). Fig.10 In another embodiment of the method shown, a first control signal in the form of a first analog signal can be used to refocus the primary electron beam to a first position FP11 to FP110 (eg Figure 7 ) or FP11 to FP14 (as shown Figure 8 In addition, the second control signal can be used to refocus the primary electron beam to the second position FP21 to FP210 (as shown in FIG. Figure 7 ) or FP21 to FP24 (as shown Figure 8 ). Fig.10 In another embodiment of the method shown, a second control signal in the form of a second analog signal can be used to refocus the primary electron beam to a second position FP21 to FP210 (eg Figure 7 ) or FP21 to FP24 (as shown Figure 8 Additionally or alternatively, the first control signal in the form of a first digital signal and / or the second control signal in the form of a second digital signal may be used to control a digital-to-analog converter for generating a focus signal for the objective 10 of the SEM 100.

[0129] Figure 6 and Fig.10 The embodiment of the method shown may additionally include at least one of the following: (i) using the second angle as the first angle; and (ii) using the fourth angle as the third angle. In other words, the first angle may be the same as the second angle. Furthermore, the third angle may be the same as the fourth angle.

[0130] Figure 6 and Fig.10 The embodiment of the method shown may additionally provide for the first positions FP11 to FP110 (eg Figure 7 ) or FP11 to FP14 (as shown Figure 8 ) and / or at each position FP21 to FP210 (as shown) in the second position Figure 7 ) or FP21 to FP24 (as shown Figure 8 In other words, at each of the first positions FP11 to FP110 (as shown in FIG. Figure 7 ) or FP11 to FP14 (as shown Figure 8 When the primary electron beam is directed to each position FP11 to FP110 (as shown in FIG. Figure 7 ) or FP11 to FP14 (as shown Figure 8 ) when the primary electron beam is directed to the corresponding position of the second position FP21 to FP210 (as shown in FIG. 1 ), the first angle passes through the first predefined value range, and the third angle passes through the third predefined value range. Additionally or alternatively, when the primary electron beam is directed to the corresponding position of the second position FP21 to FP210 (as shown in FIG. 1 ), the first angle passes through the first predefined value range, and the third angle passes through the third predefined value range. Figure 7 ) or FP21 to FP24 (as shown Figure 8 When the corresponding position of the first angle φ2 is set to φ40, the second angle passes through the second predefined value range, and the fourth angle passes through the fourth predefined value range. Each of the foregoing predefined value ranges may include an angle in the range of 0° to 90°, wherein the boundary value may be included in the foregoing predefined value range.

[0131] All the above and following embodiments of the method according to the present invention are not limited to the order of the method steps explained. The present invention also includes different orders of the method steps suitable for achieving the purpose of the present invention. Additionally or alternatively, the parallel execution of at least two method steps is also provided in the method according to the present invention. In addition, the above and following embodiments of the method according to the present invention are not limited to all of all the above or below method steps. In particular, it is intended to omit a single method step or several method steps in the above or following method steps in other embodiments.

[0132] The features of the invention disclosed in this specification, the drawings and the claims, either alone or in any combination, may be essential for implementing the invention in its various embodiments. The invention is not limited to the described embodiments. Changes are possible within the scope of the claims and in full consideration of the knowledge of those skilled in the art.

[0133] Reference numerals

[0134] 1 beam generator

[0135] 2. Lead electrode

[0136] 3. Control electrode

[0137] 4 Anode

[0138] 5First beam focusing lens

[0139] 6 Second beam focusing lens

[0140] 7 aperture units

[0141] 8 Second detector unit

[0142] 9First guiding device / first deflecting device

[0143] 10 Objective lens

[0144] 11 Toroidal Coil

[0145] 12 Second guiding device / second deflecting device

[0146] 13 Object Room

[0147] 14First detector unit

[0148] 15 Objects

[0149] 16 Object Planes

[0150] 17 pressure level aperture bracket

[0151] 18 aperture

[0152] 19 Movable object carrier

[0153] 20 optical axes

[0154] 21 guide tubes

[0155] 22 pole shoes

[0156] 23 Pole shoe gap

[0157] 25 mobile devices

[0158] 100SEM

[0159] 101 electron source

[0160] 102 lead electrode

[0161] 103 Anode

[0162] 104 bundle guide tube

[0163] 105 first condenser lens

[0164] 106 second condenser lens

[0165] 107 First Objective

[0166] 108 first aperture unit

[0167] 108A First Aperture

[0168] 109 Second aperture unit

[0169] 110 pole shoes

[0170] 111 Coil

[0171] 112 Single Electrode

[0172] 113 Tubular Electrode

[0173] 114 Object Holder

[0174] 115 Second guiding device / second deflecting device

[0175] 116 First Detector

[0176] 116A Reverse Field Grid

[0177] 117 Second Detector

[0178] 118 Second Aperture

[0179] Room 119 Detector

[0180] 120 Object Room

[0181] 121 Third Detector

[0182] 122 Object carrier

[0183] 123 Control Device

[0184] 124 Monitor

[0185] 125 objects

[0186] 126 Database

[0187] 127 processors

[0188] 130 first guiding device / first deflecting device

[0189] 200 combined equipment

[0190] Object Room 201

[0191] 300 ion beam equipment

[0192] 301 ion beam generator

[0193] 302 Extraction electrode in ion beam equipment

[0194] 303 beam focusing lens

[0195] 304 Second objective lens

[0196] 306 Adjustable or selectable aperture unit

[0197] 307 first guiding device / first deflecting device

[0198] 308 Second guiding device / second deflecting device

[0199] 500 Radiation Detector

[0200] 600 First Motion Element

[0201] 601 Shell

[0202] 602 second moving element

[0203] 603 first stage rotation axis

[0204] 604 Third motion element

[0205] 605 Fourth Motion Element

[0206] 606 Fifth Motion Element

[0207] 607 Second stage rotation axis

[0208] 608 drive control unit

[0209] 709 First beam axis

[0210] 710 Second beam axis

[0211] 800 First Signal Connection

[0212] 801 Second signal connection

[0213] 802 Third signal connection

[0214] 803 First Amplifier

[0215] 804 Second Amplifier

[0216] 900 First Geometry

[0217] 900A First Geometry

[0218] 901 Second Geometry

[0219] 901A Second Geometry

[0220] 902 Object Surface

[0221] A distance

[0222] A1 Distance

[0223] A2 Distance

[0224] CP Center Point

[0225] D1 first distance

[0226] D2 Second distance

[0227] FP11 to FP110 first position

[0228] FP21 to FP210 second position

[0229] M1 first drive unit

[0230] M2 Second Drive Unit

[0231] M3 third drive unit

[0232] M4 fourth drive unit

[0233] M5 fifth drive unit

[0234] OA optical axis

[0235] R1 first radius

[0236] R2 Second radius

[0237] S1 to S6 method steps

[0238] S5A Method Steps

[0239] S5B Method Steps

Claims

1. A method for operating a particle beam device (100, 200, 300) for processing, imaging and / or analyzing an object (15, 125), the method comprising: - generating a particle beam using a beam generator (1, 101, 301) of the particle beam device (100, 200, 300), the particle beam comprising charged particles, - guiding the particle beam using a first guiding device (9, 130, 307), wherein the particle beam is guided away from the optical axis (20, 709, 710, OA) of the particle beam device (100, 200, 300) at a first angle relative to the optical axis (20, 709, 710, OA), and guiding the particle beam using a second guiding device (12, 115, 308), wherein the particle beam is guided to the optical axis (20, 709, 710, OA) at a second angle relative to the optical axis (20, 709, 710, OA), so that the particle beam is guided to first positions (FP11 to FP110) on the surface (902) of the object (15, 125), the first positions (FP11 to FP110) being arranged along a first geometric shape (900, 900A) on the surface (902) of the object (15, 125), - guiding the particle beam using the first guiding device (9, 130, 307), wherein the particle beam is guided away from the optical axis (20, 709, 710, OA) at a third angle relative to the optical axis (20, 709, 710, OA), and guiding the particle beam using the second guiding device (12, 115, 308), wherein the particle beam is guided to the optical axis (20, 709, 710, OA) at a fourth angle relative to the optical axis (20, 709, 710, OA), so that the particle beam is guided to second positions (FP21 to FP210) on the surface (902) of the object (15, 125), the second positions (FP21 to FP210) being arranged along a second geometric shape (901, 901A) on the surface (902) of the object (15, 125), - using a control device (123) to provide a first guidance signal for guiding the particle beam, wherein the first guidance signal is provided to the first guidance device (9, 130, 307) using a first signal connection (800) between the control device (123) and the first guidance device (9, 130, 307), - using the control device (123) to provide a second guidance signal for guiding the particle beam, wherein the second guidance signal is provided to the second guidance device (12, 115, 308) using a second signal connection (801) between the control device (123) and the second guidance device (12, 115, 308), - providing the first guidance signal and the second guidance signal to guide the particle beam along the first geometric shape (900, 900A) according to a first distance (R1, D1) from a center point (CP) arranged on the surface (902) of the object (15, 125) to the first geometric shape (900, 900A), - providing the first guidance signal and the second guidance signal to guide the particle beam along the second geometric shape (901, 901A) according to a second distance (R2, D2) from the center point (CP) to the second geometric shape (901, 901A), and Wherein, guiding the particle beam along the first geometry (900, 900A) and / or along the second geometry (901, 901A) is faster in terms of time than guiding the particle beam from the first geometry (900, 900A) to the second geometry (901, 901A).

2. The method according to claim 1, further comprising at least one of the following: (i) using a circular shape as the first geometric shape (900, 900A); (ii) using a circular shape as the second geometric shape (901, 901A); (iii) using a first circle as the first geometric shape (900, 900A); (iv) Using a second circle as the second geometric shape (901, 901A).

3. The method according to claim 2, wherein: The first geometric shape (900, 900A) is defined by the center point (CP) and a first radius (R1) extending from the center point (CP) along the surface (902) of the object (15, 125), and wherein the second geometric shape (901, 901A) is defined by the center point (CP) and a second radius (R2) extending from the center point (CP) along the surface (902) of the object (15, 125), wherein the method further comprises: - providing the first guidance signal and the second guidance signal according to the first radius (R1) to guide the particle beam along the first geometric shape (900, 900A), and - providing the first guidance signal and the second guidance signal according to the second radius (R2) to guide the particle beam along the second geometric shape (901, 901A).

4. The method according to any one of the preceding claims, further comprising at least one of the following: (i) using a polygon as the first geometric shape (900, 900A); (ii) Using a polygon as the second geometric shape (901, 901A).

5. A method according to any one of the preceding claims, wherein: The first distance (R1, D1) is smaller than the second distance (R2, D2), and wherein the method further comprises: - providing the first pilot signal with a first gain factor of a first amplifier (803) by the control device (123), and The control device (123) provides the second guide signal with a second gain factor of the second amplifier (804), wherein a ratio of the first gain factor to the second gain factor when guiding the particle beam along the second geometric shape (901, 901A) is higher than a ratio of the first gain factor to the second gain factor when guiding the particle beam along the first geometric shape (900, 900A).

6. A method according to any one of the preceding claims, wherein: The first pilot signal is used as the second pilot signal.

7. The method according to any one of the preceding claims, further comprising: - the control device (123) provides a first control signal to the objective lens (10, 107, 304) of the particle beam device (100, 200, 300) according to the first distance (R1, D1) so that the particle beam is focused along the first geometric shape (900, 900A), and The control device (123) provides a second control signal to the objective lens (10, 107, 304) according to the second distance (R2, D2) so as to focus the particle beam along the second geometric shape (901, 901A).

8. The method according to claim 7, further comprising one of the following: - using an analog signal or a digital signal as the first control signal; - Using an analog signal or a digital signal as the second control signal.

9. The method according to any one of the preceding claims, further comprising at least one of the following: - using the second angle as the first angle; - Using the fourth angle as the third angle.

10. A computer program product comprising a program code which can be loaded into a processor (127) and which, when executed, controls a particle beam system (100, 200, 300) such that the method according to at least one of the preceding claims is carried out.

11. A particle beam device (100, 200, 300) for processing, imaging and / or analyzing an object, the particle beam device comprising: - at least one beam generator (1, 101, 301) for generating a particle beam having charged particles, at least one first guiding device (9, 130, 307) for guiding the particle beam, at least one second guiding device (12, 115, 308) for guiding the particle beam, at least one control device (123) for providing a first guidance signal and a second guidance signal for guiding the particle beam, at least one first signal connection (800) arranged between the control device (123) and the first guide device (9, 130, 307), at least one second signal connection (801) arranged between the control device (123) and the second guiding device (12, 115, 308), and at least one processor (127) which is arranged in or on the control device (123) and into which the computer program product according to claim 10 is loaded.

12. The particle beam apparatus (100, 200, 300) according to claim 11, further comprising at least one scanning device (9, 12, 115, 130, 307, 308) for guiding the particle beam on the object (15, 125), wherein: The scanning device (9, 12, 115, 130, 307, 308) comprises the first guiding device (9, 130, 307) and the second guiding device (12, 115, 308).

13. The particle beam device (100, 200, 300) according to claim 11 or 12, further comprising at least one detector unit (8, 14, 116, 117, 119, 121, 500), the at least one detector unit being used to detect interaction particles and / or interaction radiation generated due to the interaction of the particle beam with the object (15, 125).

14. The particle beam device (100, 200, 300) according to any one of claims 11 to 13, further comprising at least one objective lens (10, 107, 304), the at least one objective lens being used for focusing the particle beam onto the object (15, 125).

15. The particle beam device (200) according to claim 14, wherein: The beam generator (101) is a first beam generator, wherein the particle beam is a first particle beam comprising first charged particles, wherein the objective lens (107) is a first objective lens for focusing the first particle beam onto the object (125), and wherein the particle beam device (200) further comprises: - at least one second beam generator (301) for generating a second particle beam comprising second charged particles; and - at least one second objective (304) for focusing the second particle beam onto the object (125).

16. The particle beam device (100, 200, 300) according to any one of claims 11 to 15, further comprising: A first amplifier (803) and a second amplifier (804), the first amplifier being connected to the first guiding device (9, 130, 307) and the second amplifier being connected to the second guiding device (12, 115, 308).

17. The particle beam device (100, 200, 300) according to any one of claims 11 to 16, wherein: The particle beam device (100, 200, 300) is an electron beam device and / or an ion beam device.

Images