Electrostatic chuck, film forming apparatus, adsorption method, film forming method, electronic device manufacturing method, and electrostatic chuck manufacturing method

Abstract

The invention relates to an electrostatic chuck, a film forming apparatus, a suction method, a film forming method, a method for manufacturing an electronic device, and a method for manufacturing an electrostatic chuck. The present invention suppresses an arc between an electrode for a heater and an electrode for electrostatic adsorption in an electrostatic chuck provided with a heater. Provided is an electrostatic chuck for adsorbing an object to be adsorbed by means of an electrostatic force, the electrostatic chuck being characterized by being provided with: a sintered ceramic base material; an electrostatic chuck part provided on the first surface of the base material and including an adsorption electrode therein; and a heater part which is provided on a second surface on the opposite side of the first surface of the base material, and which includes a heater electrode and an insulating layer formed on the heater electrode and made of an insulator therein. The base material satisfies at least one of a low porosity, a high dielectric withstand voltage, and a high volume resistivity with respect to an insulator constituting an insulating layer of the heater unit.

Description

Technical Field

[0001] The present invention relates to an electrostatic chuck, a film-forming device, an adsorption method, a film-forming method, a method for manufacturing an electronic device, and a method for manufacturing an electrostatic chuck. Background Art

[0002] In the manufacture of an organic EL display device (organic EL display), when forming an organic light-emitting element (organic EL element; OLED) constituting the organic EL display device, an organic layer and a metal layer are formed by vapor deposition of a vapor deposition material evaporated from a vapor deposition source in a vacuum chamber of a film-forming device through a mask formed with a pixel pattern on a substrate held in a vacuum chamber. In the vacuum chamber, the substrate is held by a substrate holder. The substrate holder holds the substrate by supporting the peripheral portion of the lower surface of the substrate in a manner that does not damage the organic layer and electrode layer formed on the lower surface of the substrate, but the central portion not supported by the substrate holder will bend due to the weight of the substrate. As a component to suppress this deflection, an electrostatic chuck is used. The electrostatic chuck has an insulating substrate and an electrode arranged on the substrate. By applying a voltage to the electrode in a state close to or in contact with the upper surface of the substrate, a charge of opposite polarity is induced on the surface of the substrate, thereby causing electrostatic attraction to act on the substrate. By adsorbing the substrate to the electrostatic chuck using electrostatic attraction, the deflection of the substrate can be suppressed. In addition, in this specification, "insulation property" means "electrical insulation property" unless otherwise specified.

[0003] In order to control the temperature of the substrate to a temperature suitable for film formation during film formation, there is a technology in which a heater for heating the substrate is provided on an electrostatic chuck. Patent document 1 describes the following technology: the temperature of the wafer being processed is controlled by placing the wafer on a carrier having a dielectric film portion provided on a metal substrate, wherein the dielectric film portion is formed by attaching a heater to the opposite side of the adsorption surface of an electrostatic chuck having an electrode for electrostatic adsorption arranged inside a sintered ceramic plate using an adhesive, and the heater is formed by spraying a multilayer dielectric film having a film-shaped heater electrode inside. Patent document 2 describes the following electrostatic chuck, which is formed by spraying a film-shaped heater electrode layer, a dielectric layer, and an electrode layer for electrostatic adsorption on a metal or ceramic substrate.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2011-258614

[0007] Patent Document 2: Japanese Patent Application Publication No. 2020-178063 Summary of the invention

[0008] Problems to be solved by the invention

[0009] In a structure in which the heater electrode layer and the electrostatic attraction electrode layer are adjacent to each other via a dielectric layer formed by thermal spraying, there is a possibility that an arc may be generated between the heater electrode and the electrostatic attraction electrode.

[0010] An object of the present invention is to suppress arcing between an electrode for a heater and an electrode for electrostatic attraction in an electrostatic chuck having a heater.

[0011] Means for solving problems

[0012] The present invention provides an electrostatic chuck for adsorbing an adsorbed object by utilizing electrostatic force, wherein the electrostatic chuck comprises:

[0013] A substrate made of sintered ceramic;

[0014] an electrostatic chuck portion, the electrostatic chuck portion being disposed on the first surface of the substrate and comprising an adsorption electrode therein; and

[0015] a heater portion, the heater portion being provided on a second surface of the substrate opposite to the first surface and internally including a heater electrode and an insulating layer composed of an insulator formed on the heater electrode,

[0016] The base material satisfies at least one of low porosity, high dielectric strength, and high volume resistivity relative to an insulator constituting the insulating layer of the heater portion.

[0017] The present invention provides an electrostatic chuck for adsorbing an adsorbed object by utilizing electrostatic force, wherein the electrostatic chuck comprises:

[0018] A substrate made of sintered ceramic;

[0019] an electrostatic chuck portion, the electrostatic chuck portion being disposed on the first surface of the substrate and comprising an adsorption electrode therein; and

[0020] a heater portion provided on a second surface of the substrate opposite to the first surface and including a heater electrode therein,

[0021] The heater electrode is composed of a sprayed layer formed on the second surface of the substrate,

[0022] The heater portion includes an insulating layer formed on the heater electrode and composed of a thermal sprayed layer.

[0023] The present invention provides an adsorption method for adsorbing an adsorbed object onto an electrostatic chuck, wherein the electrostatic chuck comprises:

[0024] A substrate made of sintered ceramic;

[0025] an electrostatic chuck portion, the electrostatic chuck portion being disposed on the first surface of the substrate and comprising an adsorption electrode therein; and

[0026] a heater portion, the heater portion being provided on a second surface of the substrate opposite to the first surface and internally including a heater electrode and an insulating layer formed on the heater electrode and made of an insulator,

[0027] The substrate satisfies at least one of low porosity, high dielectric strength and high volume resistivity relative to the insulator constituting the insulating layer of the heater portion.

[0028] The adsorption method has:

[0029] A step of applying a voltage to the adsorption electrode to adsorb the adsorbed object onto the electrostatic chuck portion; and

[0030] A step of applying a voltage to the heater electrode to heat the adsorbent.

[0031] The present invention provides a method for manufacturing an electrostatic chuck, wherein the electrostatic chuck comprises an electrostatic chuck portion and a heater portion, wherein the electrostatic chuck portion is used to adsorb an adsorbed object using electrostatic force, and wherein the method for manufacturing the electrostatic chuck comprises:

[0032] forming an adsorption electrode of the electrostatic chuck portion on a first surface of a sintered ceramic substrate;

[0033] a step of forming an insulating layer composed of an insulator on the adsorption electrode by sputtering;

[0034] forming a heater electrode of the heater portion on a second surface of the substrate opposite to the first surface by thermal spraying; and

[0035] A step of forming an insulating layer made of an insulator on the heater electrode by thermal spraying.

[0036] Effects of the Invention

[0037] According to the present invention, it is possible to suppress arcing between an electrode for a heater and an electrode for electrostatic attraction in an electrostatic chuck including a heater. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a diagram showing an apparatus for manufacturing an electronic device according to Example 1.

[0039] Figure 2 This is a diagram showing a film forming apparatus according to Example 1.

[0040] Figure 3 It is a cross-sectional view of the electrostatic chuck of Example 1 and a block diagram of the system.

[0041] Figure 4 It is a top view of the electrostatic chuck portion of Example 1.

[0042] Figure 5 This is a top view of the heater unit of Example 1.

[0043] Figure 6 It is a top view of the electrostatic chuck portion of Example 1.

[0044] Figure 7 This is a schematic diagram of an image obtained by photographing the alignment mark of Example 1.

[0045] Figure 8 1 is a flowchart showing the flow of the film forming process of Example 1.

[0046] Fig. 9 This is a top view of the heater portion of Example 2.

[0047] Fig.10 It is a cross-sectional view of the electrostatic chuck portion of Example 3 and a block diagram of the system.

[0048] Fig.11 It is a diagram showing an electronic device according to an embodiment.

[0049] Description of Reference Numerals

[0050] 2: Adsorption electrode

[0051] 24: Electrostatic chuck

[0052] 80: Base material

[0053] 90: Heater electrode

[0054] 150: Heater

[0055] 150b: Insulation layer

[0056] 240: Electrostatic chuck unit. DETAILED DESCRIPTION

[0057] (Example 1)

[0058] Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the accompanying drawings. However, the following embodiments and examples are merely illustrative of preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, as for the hardware structure and software structure, processing flow, manufacturing conditions, size, material, shape, etc. of the device in the following description, unless there is a particularly specific description, it is not intended to limit the scope of the present invention to only these.

[0059] The present invention can be applied to a device for depositing various materials on the surface of a substrate to form a film, and can preferably be applied to a device for forming a thin film (material layer) of a desired pattern by vacuum evaporation. As the material of the substrate, any material such as glass, a thin film of a polymer material, a metal, etc. can be selected. For example, the substrate can also be a substrate in which a thin film of polyimide or the like is stacked on a glass substrate. In addition, as the evaporation material, any material such as an organic material, a metallic material (metal, metal oxide, etc.) can also be selected. In addition, in addition to the vacuum evaporation device described in the following description, the present invention can also be applied to a film forming device having a sputtering device and a CVD (Chemical Vapor Deposition) device. Specifically, the technology of the present invention can be applied to a manufacturing device for organic electronic devices (such as organic EL elements, thin-film solar cells), optical components, etc. Among them, a manufacturing device for an organic EL element that forms an organic EL element by evaporating the evaporation material and evaporating it on the substrate through a mask is also one of the preferred application examples of the present invention.

[0060] <Electronic device manufacturing equipment>

[0061] Figure 1 It is a plan view schematically showing the structure of a part of an electronic device manufacturing apparatus.

[0062] Figure 1 The manufacturing apparatus is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. Generally, an electronic device manufacturing apparatus includes a plurality of cluster devices 1 and a relay device that connects the cluster devices 1 to each other.

[0063] The cluster device 1 includes a plurality of film forming devices 11 for processing (eg, forming films) the substrate S, a plurality of mask storage devices 12 for storing the masks M before and after use, and a transport chamber 13 disposed in the center thereof. Figure 1 As shown, the transport chamber 13 is connected to a plurality of film forming devices 11 and a mask storage device 12 respectively.

[0064] A conveying robot 14 for conveying a substrate S and a mask M is arranged in the conveying chamber 13. The conveying robot 14 conveys the substrate S from a path chamber 15 of a transfer device arranged on the upstream side to the film forming device 11. In addition, the conveying robot 14 conveys the mask M between the film forming device 11 and the mask stocker 12. The conveying robot 14 is a robot having a structure in which a manipulator for holding the substrate S or the mask M is mounted on a multi-jointed arm, for example.

[0065] In the film forming device 11 (also referred to as a vapor deposition device), the vapor deposition material contained in the vapor deposition source is heated by a heater to evaporate, and is vapor deposited on the substrate S through a mask M. In the mask M, an opening is provided at a position corresponding to the position where the thin film is formed on the substrate S, and is configured to cover the position where the thin film is not formed in the substrate S. Thus, by forming a film on the substrate S through the mask M, a thin film of a desired pattern (a pattern corresponding to the position where the opening is provided) is formed on the substrate S. In addition, as a specific example of the mask M, for example, a member composed of a mask frame provided at the periphery and having a higher rigidity and a mask foil provided at the inner side of the mask frame and having a lower rigidity can be cited. The mask frame and the mask foil can be joined by welding or the like. In the mask thus configured, the above-mentioned opening is provided in the mask foil. In addition, as another specific example, a mask having a portion equivalent to the mask frame and a portion equivalent to the mask foil as a whole can be cited. Such a mask can be made, for example, by processing a silicon wafer. The film forming apparatus 11 performs a series of film forming processes including delivery of the substrate S to or from the transfer robot 14 , adjustment (alignment) of the relative position of the substrate S and the mask M, fixing of the substrate S to the mask M, and film formation (evaporation).

[0066] In the mask stocker 12, new masks M used in the film forming process performed by the film forming device 11 and used masks M are stored separately in two boxes. The transport robot 14 transports the used masks M from the film forming device 11 to the box of the mask stocker 12, and transports new masks M stored in other boxes of the mask stocker 12 to the film forming device 11.

[0067] The cluster device 1 is connected to a path chamber 15 and a buffer chamber 16. The path chamber 15 delivers the substrate S from the upstream side to the cluster device 1 in the conveying direction of the substrate S, and the buffer chamber 16 is used to deliver the substrate S after the film forming process by the cluster device 1 to other cluster devices on the downstream side. The conveying robot 14 of the conveying chamber 13 receives the substrate S from the path chamber 15 on the upstream side and conveys it to one of the film forming devices 11 in the cluster device 1 (for example, the film forming device 11a). In addition, the conveying robot 14 receives the substrate S after the film forming process by the cluster device 1 from one of the multiple film forming devices 11 (for example, the film forming device 11b), and conveys it to the buffer chamber 16 connected to the downstream side.

[0068] A swirl chamber 17 for changing the orientation of the substrate S is provided between the buffer chamber 16 and the path chamber 15. A transfer robot 18 is provided in the swirl chamber 17, and the transfer robot 18 is used to receive the substrate S from the buffer chamber 16, rotate the substrate S 180 degrees, and transfer it to the path chamber 15. Thus, the orientation of the substrate S is the same in the cluster device 1 on the upstream side and the cluster device 1 on the downstream side, and substrate processing becomes easy.

[0069] The path chamber 15 , the buffer chamber 16 , and the swirl chamber 17 are so-called transfer devices that connect the cluster devices 1 . The transfer device arranged on the upstream side and / or downstream side of the cluster device 1 has at least one of the path chamber 15 , the buffer chamber 16 , and the swirl chamber 17 .

[0070] The film forming device 11, the mask stocker 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic EL element. The path chamber 15 is usually maintained in a low vacuum state, but can be maintained in a high vacuum state as needed.

[0071] The structure of the electronic device manufacturing apparatus to which the present invention is applicable is not limited to the above structure, and other types of apparatuses and chambers may be included, and the arrangement of these apparatuses and chambers may be changed.

[0072] <Film forming equipment>

[0073] Figure 2 is a schematic diagram showing the structure of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system is used in which the vertical direction is set to the Z direction. When the substrate S is fixed to be parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is set to the X direction, and the long side direction (direction parallel to the long side) is set to the Y direction. In addition, the rotation angle around the Z axis is represented by θ.

[0074] The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen, and a substrate support unit 22 , a mask support unit 23 , an electrostatic chuck 24 , and a vapor deposition source 25 provided inside the vacuum container 21 .

[0075] The substrate supporting unit 22 is a member that receives and holds the substrate S conveyed by the conveyance robot 14 provided in the conveyance chamber 13 , and is also called a substrate holder (substrate holding member).

[0076] A mask supporting unit 23 is provided below the substrate supporting unit 22. The mask supporting unit 23 is a member that receives and holds the mask M conveyed by the conveying robot 14 provided in the conveying chamber 13, and is also called a mask holder.

[0077] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. For example, the mask used to manufacture organic EL elements for smartphones is a metal mask with a fine opening pattern, also called FMM (Fine Metal Mask).

[0078] An electrostatic suction cup 24 for adsorbing and fixing the substrate S and / or the mask M by electrostatic attraction is provided above the substrate support unit 22. The electrostatic suction cup 24 adsorbs and holds the substrate S (first adsorbed body) before film formation. Afterwards, film formation is performed while the substrate S (first adsorbed body) and the mask M (second adsorbed body) are held by the electrostatic suction cup 24. After film formation is completed, the electrostatic suction cup 24 releases the substrate S (first adsorbed body) and the mask M (second adsorbed body).

[0079] Although in Figure 2 Although not shown in the figure, the following structure may be adopted: a cooling mechanism (eg, a cooling plate) for suppressing the temperature rise of the substrate S is provided on the opposite side of the adsorption surface of the electrostatic chuck 24, thereby suppressing the deterioration and degradation of the organic material deposited on the substrate S.

[0080] The evaporation source 25 includes a crucible (not shown) for storing the evaporation material to be formed on the substrate S, a heater (not shown) for heating the crucible, and a baffle (not shown) for preventing the evaporation material from scattering toward the substrate S until the evaporation rate from the evaporation source 25 becomes constant. The evaporation source 25 can have various structures such as a point evaporation source or a linear evaporation source according to the application.

[0081] Although in Figure 2 Although not shown in the figure, the film forming apparatus 11 includes a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate S and a film thickness calculation unit (not shown).

[0082] A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum container 21. These actuators 26, 27, 28, and the position adjustment mechanism 29 are composed of, for example, a motor and a ball screw or a motor and a linear guide. The substrate Z actuator 26 is a driving component for lifting (moving in the Z direction) the substrate support unit 22. The mask Z actuator 27 is a driving component for lifting (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving component for lifting (moving in the Z direction) the electrostatic chuck 24.

[0083] The position adjustment mechanism 29 is a driving component for aligning the electrostatic chuck 24. The position adjustment mechanism 29 moves the electrostatic chuck 24 as a whole in the X direction, the Y direction, and the θ rotation relative to the substrate support unit 22 and the mask support unit 23. In addition, by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is adsorbed, the relative position of the substrate S and the mask M is aligned.

[0084] In addition to the above-mentioned driving components and position adjustment mechanism, a camera 20 is provided on the upper surface of the outer side of the vacuum container 21. The camera 20 is used to photograph the alignment marks formed on the substrate S and the mask M through the transparent window provided on the upper surface of the vacuum container 21 and the hole provided on the electrostatic chuck 24. The camera 20 is provided at a position corresponding to the through hole H provided on the electrostatic chuck 24, that is, at a position corresponding to the four corners and the center of the electrostatic chuck 24.

[0085] The camera 20 is a camera that has the capability of fine alignment for adjusting the relative position of the substrate S and the mask M with high precision, and is a camera with high resolution despite its narrow field of view. In addition, the film forming apparatus 11 may include a rough alignment camera with a relatively wide field of view and low resolution in addition to the fine alignment camera 20, and the substrate S and the mask M may be aligned by combining rough alignment using the rough alignment camera and fine alignment using the fine alignment camera.

[0086] The control unit 40 analyzes the images of the alignment marks of the substrate S (first adsorbed body) and the mask M (second adsorbed body) captured by the camera 20, thereby obtaining the position information of the substrate S and the mask M. The control unit 40 controls the position adjustment mechanism 29 based on the position information of the substrate S and the mask M, thereby performing alignment to adjust the position by relatively moving the substrate S (first adsorbed body) and the mask M (second adsorbed body).

[0087] The control unit 40 has functions such as conveying and aligning the substrate S, controlling the evaporation source 25, and controlling film formation. The control unit 40 also has a function of controlling the application of voltage to the electrostatic chuck 24, which will be described later. Figure 3 The function of the first voltage control unit 32 is as follows.

[0088] The control unit 40 can be composed of a computer having a processor, a memory, a storage device, an I / O, etc. In this case, the functions of the control unit 40 are realized by causing the processor to execute a program stored in the memory or the storage device. As the computer, a general-purpose personal computer, an embedded computer or a PLC (Programmable Logic Controller) can be used. Alternatively, a circuit such as an ASIC or FPGA can be used to constitute part or all of the functions of the control unit 40. In addition, the control unit 40 can be set for each film forming device 11, or one control unit 40 can be configured to control multiple film forming devices 11.

[0089] <Electrostatic chuck system>

[0090] Reference Figure 3~Figure 6 , the electrostatic chuck system 30 and the adsorption method are described. Figure 3 is a block diagram of the electrostatic chuck system 30 and a cross-sectional view of the electrostatic chuck 24, Figure 4 2 is a top view of the electrostatic chuck unit 240 . Figure 5 1 is a top view of the heater unit 150 . Figure 6 2 is a top view of the electrostatic chuck unit 240 . Figure 3 yes Figure 4 and Figure 5 A cross-sectional view taken at the position indicated by line AA.

[0091] like Figure 3 As shown, the electrostatic chuck system 30 includes an electrostatic chuck 24, a first voltage applying unit 31, a first voltage control unit 32, a second voltage applying unit 36, and a second voltage control unit 37. The electrostatic chuck 24 uses electrostatic force to adsorb the substrate S as an adsorbed body. The electrostatic chuck 24 includes: a substrate 80 made of sintered ceramic; an electrostatic chuck unit 240, which is provided on the first surface 81 of the substrate 80 and includes an adsorption electrode 2 inside; and a heater unit 150, which is provided on the second surface 82 on the opposite side of the first surface 81 of the substrate 80 and includes a heater electrode 90 inside. The first voltage applying unit 31 is connected to the adsorption electrode 2 of the electrostatic chuck unit 240 via the wiring 34, and applies a voltage for generating an electrostatic attraction to the adsorption electrode 2. In addition, the second voltage applying unit 36 ​​is connected to the heater electrode 90 of the heater unit 150 via the wiring 35, and applies a voltage for causing the heater electrode 90 to generate heat.

[0092] The electrostatic chuck unit 240 includes an electrode layer 240a formed of a sprayed layer formed on the first surface 81 of the substrate 80 and a dielectric layer 240b formed of a sprayed layer formed on the electrode layer 240a. The portion of the electrode layer 240a other than the adsorption electrode 2 is made of an insulator. The wiring 34 connected to the adsorption electrode 2 of the electrode layer 240a passes through the dielectric layer 240b and is drawn out from the lower surface of the electrostatic chuck 24 and connected to the first voltage application unit 31.

[0093] The heater section 150 includes an electrode layer 150a formed of a sprayed layer formed on the second surface 82 of the substrate 80 and an insulating layer 150b formed of a sprayed layer formed on the electrode layer 150a. The wiring 35 connected to the heater electrode 90 of the electrode layer 150a passes through the insulating layer 150b and is drawn out from the upper surface of the electrostatic chuck 24 to be connected to the second voltage applying section 36.

[0094] In addition, the structure may be a structure in which both the wiring connected to the adsorption electrode 2 and the wiring connected to the heater electrode 90 are led out from the upper surface of the electrostatic suction cup 24, or a structure in which both the wiring connected to the adsorption electrode 2 and the wiring connected to the heater electrode 90 are led out from the lower surface of the electrostatic suction cup 24.

[0095] <Method for manufacturing electrostatic chuck>

[0096] In the electrostatic chuck 24 of Example 1, the substrate 80 satisfies at least one of low porosity, high insulation withstand voltage, and high volume resistivity relative to the insulator of the insulating layer 150b constituting the heater portion 150. In the manufacturing method of such an electrostatic chuck 24, a terminal assembly is provided on the substrate 80 manufactured by machining a ceramic sintered material.

[0097] First, the electrostatic suction cup part 240 forms an electrode layer 240a on the first surface 81 of the substrate 80 by spraying. The electrode layer 240a is patterned by spraying an electrode material such as aluminum using a pattern mask to form an adsorption electrode 2. Next, a dielectric layer 240b, which is a layer composed of dielectrics such as aluminum oxide, is formed on the electrode layer 240a by spraying. Next, the dielectric layer 240b is impregnated with an inorganic or organic impregnating agent and sealed to perform porous protection measures. As a result, electrical insulation and non-hygroscopicity are improved. Next, the dielectric layer 240b is polished.

[0098] First, the heater portion 150 forms an electrode layer 150a on the second surface 82 of the substrate 80 by spraying. The electrode layer 150a of the heater portion 150 is formed in the same manner as the electrode layer 240a of the electrostatic chuck portion 240. Next, an insulating layer 150b is formed on the electrode layer 150a by spraying, which is a layer made of an insulator and electrically insulates the electrode of the electrode layer 240a from the outside of the electrostatic chuck 24. Next, the insulating layer 150b is subjected to an immersion treatment. The insulating layer 150b of the heater portion 150 is subjected to an immersion treatment in the same manner as the dielectric layer 240b of the electrostatic chuck portion 240. Next, the insulating layer 150b is polished.

[0099] The thickness of the substrate 80 is 3 mm to 20 mm, more preferably 8 mm to 15 mm. The substrate 80 is manufactured by sintering, and materials such as alumina (Al2O3), machinable ceramics, and MMC (Metal Matrix Composites) can be used.

[0100] The thickness of the electrode layer 150a including the heater electrode 90 of the heater unit 150 is greater than or equal to 0.02 mm and less than or equal to 0.4 mm. The thickness of the electrode layer 240a including the adsorption electrode 2 of the electrostatic chuck unit 240 is greater than or equal to 0.1 mm and less than or equal to 0.4 mm. The electrode layers 150a and 240a are manufactured by metal spraying, and aluminum (Al), tungsten (W), molybdenum (Mo), nickel-chromium alloy (NiCr), etc. can be used as the material.

[0101] The thickness of the insulating layer 150b of the heater unit 150 is greater than or equal to 0.1 mm and less than or equal to 0.8 mm. The thickness of the dielectric layer 240b of the electrostatic chuck unit 240 is greater than or equal to 0.2 mm and less than or equal to 1.0 mm. The insulating layer 150b and the dielectric layer 240b are made by ceramic spraying, and as a material, alumina, YAG, yttrium oxide (Y2O3), zirconium silicate (ZrSiO4), titanium dioxide (TiO2), etc. can be used.

[0102] Since the electrostatic chuck system 30 of Example 1 is used for a film forming device that forms a film on a substrate S by upward deposition, the first surface 81 of the substrate 80 provided with the electrostatic chuck portion 240 is the lower surface, and the second surface 82 is the upper surface. In addition, when vapor deposition is performed by downward deposition, the first surface of the substrate 80 provided with the electrostatic chuck portion is set as the upper surface, and the second surface on the opposite side thereof provided with the heater portion is set as the lower surface. In addition, when vapor deposition is performed while holding the substrate in a posture parallel to the vertical direction, the first surface of the substrate provided with the electrostatic chuck and the second surface on the opposite side thereof provided with the heater portion are both parallel to the vertical direction.

[0103] The first voltage control unit 32 controls the voltage applied from the first voltage application unit 31 to the adsorption electrode 2 according to the progress of the adsorption process of the electrostatic chuck system 30 and the film forming process of the film forming device 11. The second voltage control unit 37 controls the voltage applied from the second voltage application unit 36 ​​to the heater electrode 90. The control of these voltages includes the control of the voltage magnitude, the starting time of voltage application, the voltage maintenance time, the order of voltage application, etc.

[0104] The adsorption electrode 2 generates an electrostatic force for adsorbing an adsorbed object (e.g., substrate S, mask M) to the adsorption surface 83 (lower surface of the dielectric layer 240b) by applying a voltage from the first voltage applying unit 31. In addition, the electrostatic chuck unit 240 has a shape and size corresponding to the shape of the substrate S. In Example 1, the substrate S is rectangular with a long side of 1500 mm or more, and the electrostatic chuck unit 240 has a shape and size that can adsorb such a large substrate.

[0105] The electrostatic chuck 24 can be a Coulomb force type electrostatic chuck, a Johnson-Rabbeck force type electrostatic chuck, or a gradient force type electrostatic chuck. Preferably, the electrostatic chuck 24 is a gradient force type electrostatic chuck. In the case where the electrostatic chuck 24 is a gradient force type electrostatic chuck, even if the substrate S is an insulating substrate, it can be well adsorbed by the electrostatic chuck 24. In the case where the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive and negative voltages are applied to the metal electrode, polarized charges of opposite polarity to the metal electrode are induced in the substrate S or other adsorbed body through the dielectric matrix, and the electrostatic attraction between them is used to adsorb and fix the substrate S to the electrostatic chuck 24.

[0106] One or more cutouts, i.e., through holes H, are formed in the electrostatic chuck 24 so as to penetrate the plate. The through holes H are alignment through holes for photographing alignment marks formed on the substrate S and the mask M via the electrostatic chuck 24. The through holes H may be empty spaces not filled with anything, or may be filled with a transparent insulating material.

[0107] like Figure 6 As shown, the through holes H are provided at the four corners and the center of the electrostatic suction cup 24. In addition, the location where the through holes H are provided is an example, and can be set according to the positions of the alignment marks provided on the substrate S and the mask M. In addition, the location and number of the through holes H are an example, and the present invention is not limited to the above example. For example, the through holes H may be provided at the two corners instead of the four corners on the diagonal. In addition, the through holes H may be further provided at the center of a pair of opposing sides (for example, short sides). In addition, the through holes H may be formed by subsequently performing a cutting process on a component that does not have a through hole, or may be provided by forming a component in a manner that has a through hole from the beginning. In addition, the shape of the cutout portion may be any shape as long as it is a shape that passes through from the adsorption surface for adsorbing the adsorbed body to the surface on the opposite side and the adsorbed body can be photographed by a camera through the cutout portion.

[0108] like Figure 3 and Figure 4 As shown, the adsorption electrode 2 has a plurality of electrode portions. Specifically, the adsorption surface 83 of the electrostatic suction cup portion 240 is divided into a plurality of regions along the long side direction (Y direction) and the short side direction (X direction), and a plurality of electrode portions are respectively provided at positions corresponding to the plurality of regions. The first voltage control unit 32 is capable of independently controlling the voltage applied to the plurality of electrode portions by the electrostatic suction cup portion 240 according to each electrode portion. In Example 1, the electrostatic suction cup portion 240 is divided into three regions along the X direction and three regions along the Y direction, and is divided into a total of nine regions 141 to 149, and nine electrode portions 241 to 249 of the adsorption electrode 2 are respectively provided at positions corresponding to each region.

[0109] The electrode portions 241 to 249 each include an electrode pair 33 composed of a first electrode 331 and a second electrode 332. In Example 1, a positive voltage is applied to the first electrode 331 and a negative voltage is applied to the second electrode 332, thereby generating an electrostatic adsorption force.

[0110] like Figure 4 As shown, the first electrode 331 and the second electrode 332 each have a comb shape. For example, the first electrode 331 and the second electrode 332 each have a plurality of comb teeth and a base connected to the plurality of comb teeth. The base of each of the first electrode 331 and the second electrode 332 supplies voltage to the comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force between the plurality of comb teeth and the adsorbed body. In one electrode portion, the comb teeth of the first electrode 331 are alternately arranged in a manner facing the comb teeth of the second electrode 332. In this way, by setting the structure in which the comb teeth of the first electrode 331 and the second electrode 332 are facing each other and interlaced with each other, the interval between the electrodes to which different voltages are applied can be narrowed, a larger non-uniform electric field can be formed, and the substrate S can be adsorbed by using a gradient force. In addition, the shape of the first electrode 331 and the second electrode 332 of the electrode portions 241~249 of the electrostatic suction cup 24 is an example and is not limited to the above example. As long as it can generate electrostatic attraction between the adsorbed body, it can have various shapes.

[0111] also, Figure 3 , Figure 4 The area division of the electrostatic suction cup portion 240 shown is an example and is not limited to the above example. For example, the electrostatic suction cup portion 240 may be divided only in the long side direction or the short side direction. In addition, the "adsorption surface 83 of the electrostatic suction cup portion 240 is divided into a plurality of areas" mentioned herein may be a structure in which the electrostatic suction cup portion 240 physically has a plurality of separate adsorption portions and each adsorption portion has one or more electrode portions, or a structure in which a plurality of electrode portions capable of independently controlling the application of voltage are physically provided in one adsorption portion. In addition, it may be a structure in which the application of voltage can be independently controlled according to each sub-electrode, or a structure in which a plurality of electrode portions are respectively divided into a plurality of groups including one or more electrode portions and the application of voltage can be independently controlled according to each group.

[0112] For example, three electrode portions 241, 244, 247 arranged in a direction (Y direction) intersecting the adsorption progress direction (X direction) of the substrate S can be set as one group, and the three electrode portions included in the group can be made into one adsorption portion. That is, the three electrode portions 241, 244, 247 can be independently voltage-controlled, but by controlling the three electrode portions 241, 244, 247 in a manner of applying the same voltage to the three electrode portions 241, 244, 247 at the same time, the three electrode portions 241, 244, 247 can function as one adsorption portion.

[0113] The first voltage control unit 32 and the second voltage control unit 37 may be configured by hardware separate from the control unit 40 of the film forming apparatus 11 , or the control unit 40 of the film forming apparatus 11 may perform the functions of the first voltage control unit 32 and the second voltage control unit 37 .

[0114] In addition, Figure 4 , an example in which the electrode density of the plurality of electrode portions 241 to 249 is uniform is shown, but the electrode density may be set for each electrode portion as required. For example, the electrode density may be different between the electrode portion corresponding to the region where the through hole H is provided and the electrode portion corresponding to the region where the through hole H is not provided.

[0115] like Figure 5 As shown, the heater electrode 90 of the heater section 150 is provided on the entire surface of the second surface 82 of the substrate 80. The heater electrode 90 has a folded shape written in one stroke, and the folded shape written in one stroke is composed of a plurality of first portions 90d extending from one end side of the second surface 82 of the substrate 80 in the Y direction to the other end side, and a second portion 90c connecting the ends of the first portions 90d adjacent in the X direction to each other. Terminals 90a and 90b are provided at both ends of the heater electrode 90, and the terminals 90a and 90b are connected to wiring for supplying power from the second voltage applying section 36. Both the terminals 90a and 90b are provided at the outer periphery of the heater section 150.

[0116] <Advantages of the electrostatic chuck 24 of Example 1>

[0117] In the electrostatic chuck 24 of the first embodiment, since the electrode layer 150a of the heater portion 150 is formed by thermal spraying, the shape of the formed electrode has a high degree of freedom. Figure 5The heater section 150 has a high heat uniformity by using a complex-shaped electrode as shown. In addition, the heater electrode 90 of the heater section 150 is isolated from the adsorption electrode 2 of the electrostatic chuck section 240 by the sintered ceramic substrate 80. By using the sintered ceramic substrate 80 to isolate the heater electrode 90 from the adsorption electrode 2, for example, compared with the case of isolation by an insulating layer formed by thermal spraying, it is possible to use an insulating layer with low porosity and high density, strong insulation withstand voltage, large volume resistivity, and small deviation in electrical characteristics for isolation, so that the generation of an arc between the heater electrode 90 of the heater section 150 and the adsorption electrode 2 of the electrostatic chuck section 240 can be suppressed.

[0118] Since the electrostatic chuck portion 240 is formed by forming the electrode layer 240a and the dielectric layer 240b on the first surface 81 of the substrate 80 by thermal spraying, the member constituting the substrate 80 and the member constituting the electrostatic chuck portion 240 are directly bonded to each other, and the member constituting the electrostatic chuck portion 240 is provided on the member constituting the substrate 80 in a manner of direct contact. Therefore, there is no adhesive layer, which is a layer disposed between the first surface 81 of the substrate 80 and the electrode layer 240a and fixes the two by an adhesive, and therefore the electrostatic chuck portion 240 is provided on the first surface 81 of the substrate 80 without an adhesive layer. In addition, since the heater portion 150 is formed by forming the electrode layer 150a and the insulating layer 150b on the second surface 82 of the substrate 80 by thermal spraying, the member constituting the substrate 80 and the member constituting the heater portion 150 are directly bonded to each other, and the member constituting the heater portion 150 is provided on the member constituting the substrate 80 in a manner of direct contact. Therefore, heater unit 150 is provided on second surface 82 of substrate 80 without an adhesive layer. Therefore, since electrostatic chuck 24 does not have an adhesive layer, it is possible to suppress the occurrence of outgassing in vacuum container 21 (vacuum chamber).

[0119] Since the wiring 34 for supplying power from the outside to the adsorption electrode 2 is taken out from the lower surface of the electrostatic chuck 24 (the side where the electrostatic chuck portion 240 is provided), and the wiring 35 for supplying power from the outside to the heater electrode 90 is taken out from the upper surface of the electrostatic chuck 24 (the side where the heater portion 150 is provided), there is no electric wiring portion inside the substrate 80. Therefore, the generation of arcs caused by the presence of the electric wiring portion can be suppressed.

[0120] <Alignment>

[0121] Reference Figure 7 Alignment based on an image of the substrate S captured by the camera 20 through the through hole H of the electrostatic chuck 24 will be described. Figure 7 2 is a diagram schematically showing an image captured by the camera 20 .

[0122] In the image 50 captured by the camera 20, there are shown the through hole H provided in the electrostatic chuck 24, the substrate mark 51 which is an alignment mark provided in the substrate S, and the mask mark 52 which is an alignment mark provided in the mask M located below the substrate S. The control unit 40 analyzes the image 50 captured by the camera 20 to obtain the positional relationship between the substrate mark 51 and the mask mark 52, and calculates the movement amount of the position adjustment mechanism 29 required to make the positions of the substrate mark 51 and the mask mark 52 coincide with each other with the mask mark 52 as the target position. Then, the position adjustment mechanism 29 is driven in the X direction, the Y direction, and the θ direction according to the calculated movement amount.

[0123] As described above, in the first embodiment, alignment can be determined based on the image 50 captured by the camera 20 through the through hole H.

[0124] <Film Forming Process>

[0125] The following is based on Figure 8 The film forming method using the adsorption method of Example 1 is illustrated by a flow chart.

[0126] In step S1, the control unit 40 uses the conveying robot 14 in the conveying chamber 13 to carry the substrate S into the vacuum container 21 of the film forming apparatus 11, while the mask M is supported by the mask supporting unit 23 in the vacuum container 21. The hand of the conveying robot 14 entering the vacuum container 21 is lowered, and the substrate S is placed on the supporting portion of the substrate supporting unit 22.

[0127] In step S2 , the control unit 40 lowers the electrostatic chuck 24 toward the substrate S, and after the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, a predetermined voltage is applied to the adsorption electrode 2 of the electrostatic chuck unit 240 to adsorb the substrate S.

[0128] In step S3, the control unit 40 measures the relative positional deviation of the substrate S with respect to the mask M in a state where the substrate S is adsorbed on the electrostatic chuck 24. The control unit 40 lowers the electrostatic chuck 24 and brings the substrate S adsorbed on the electrostatic chuck 24 close to the mask M. When the substrate S is lowered to the measurement position, the control unit 40 uses the camera 20 to photograph the alignment marks formed on the substrate S and the mask M through the through hole H, and measures the relative positional deviation of the substrate S and the mask M.

[0129] In step S4, the control unit 40 determines whether the relative positional deviation of the substrate S with respect to the mask M is less than a threshold value. If the positional deviation is greater than the threshold value, the process proceeds to step S5, and if the positional deviation is less than the threshold value, the process proceeds to step S6.

[0130] In step S5 , the control unit 40 controls the position adjustment mechanism 29 to move the substrate S adsorbed on the electrostatic chuck 24 in the horizontal direction (XYθ direction) to adjust (align) the position of the substrate S with respect to the mask M. Thereafter, the positional deviation determination in step S4 is performed again.

[0131] In step S6 , the control unit 40 applies a predetermined voltage to the attraction electrode 2 of the electrostatic chuck unit 240 to attract the mask M to the electrostatic chuck 24 via the substrate S.

[0132] In step S7, the control unit 40 applies a predetermined voltage to the heater electrode 90 of the heater unit 150, and heats the substrate S so that the temperature thereof becomes a temperature suitable for the film forming process. In addition, for temperature control, for example, a temperature sensor may be provided inside the electrostatic chuck 24, and feedback control may be performed based on the output value of the temperature sensor.

[0133] In step S8, the control unit 40 opens the shutter of the evaporation source 25, so that the evaporation material is evaporated on the substrate S through the mask M. After the evaporation reaches the desired thickness, the voltage applied to the adsorption electrode 2 of the electrostatic chuck 24 is reduced to separate the mask M, and the electrostatic chuck 24 is raised by the electrostatic chuck Z actuator 28 while only the substrate S is adsorbed on the electrostatic chuck 24. Next, the hand of the transport robot 14 enters the vacuum container 21 of the film forming device 11, and applies a voltage of zero (0) or opposite polarity to the adsorption electrode 2 of the electrostatic chuck 24, so that the substrate S is separated from the electrostatic chuck 24. Thereafter, the transport robot 14 carries the substrate S after the evaporation out of the vacuum container 21.

[0134] In addition, in the above description, the film forming device 11 is a structure of a so-called upward evaporation method (upward deposition) in which film formation is performed with the film forming surface of the substrate S facing downward in the vertical direction, but it is not limited to this, and it can also be a structure as follows: the substrate S is arranged in a state of being vertically upright on the side side of the vacuum container 21, and the film is formed in a state in which the film forming surface of the substrate S is parallel to the direction of gravity.

[0135] Hereinafter, Example 2 and Example 3 will be described, but the same reference numerals are given to the same components as those of Example 1, and detailed description thereof will be omitted.

[0136] (Example 2)

[0137] The structure of the heater unit 150 in the second embodiment is different from that in the first embodiment. Hereinafter, the differences from the first embodiment will be mainly described. Fig. 9 FIG. 1 is a top view of the heater unit 150 of Example 2. Fig. 9As shown, the heater electrode 90 has a plurality of electrode portions, and the plurality of electrode portions are arranged at positions corresponding to a plurality of regions set on the second surface 82 of the substrate 80. Fig. 9 In the example, the heater portion 150 is divided into three regions along the X direction and three regions along the Y direction, and is divided into a total of nine regions 161 to 169. Nine electrode portions 91 to 99 of the heater electrode 90 are provided at positions corresponding to the respective regions.

[0138] Alternatively, the second voltage control unit 37 can independently control the voltage application of the second voltage application unit 36 ​​to each of the plurality of electrode units 91 to 99. In this case, the second voltage control unit 37 can control the voltage application in such a manner that the voltage applied to the peripheral electrode units 91 to 94, 96 to 99 is larger than the voltage applied to the central electrode unit 95, so that the heat generated by the peripheral electrode units 91 to 94, 96 to 99 corresponding to the regions 161 to 164, 166 to 169 located in the peripheral portion of the heater unit 150 among the plurality of regions 161 to 169 is larger than the heat generated by the central electrode unit 95 corresponding to the region 165 located in the central portion of the heater unit 150. Thus, since the heat generated by the peripheral portion that is easy to cool becomes larger, the substrate S can be uniformly heated in the entire region of the heater unit 150.

[0139] In addition, the structure in which the heat generated by the peripheral electrode parts 91 to 94, 96 to 99 is larger than the heat generated by the central electrode part 95 is not limited to this. For example, the resistance of the peripheral electrode parts 91 to 94, 96 to 99 may be larger than the resistance of the central electrode part 95. In addition, the film thickness of the peripheral electrode parts 91 to 94, 96 to 99 may be smaller than the film thickness of the central electrode part 95. In addition, the width of the peripheral electrode parts 91 to 94, 96 to 99 may be narrower than the width of the central electrode part 95.

[0140] Furthermore, depending on the purpose, the voltage application to the electrodes 91 to 99 may be controlled or the resistance, film thickness, or width of the electrodes 91 to 99 may be set so as to form a temperature gradient within the surface of the heater unit 150 .

[0141] Terminals 91a, 91b, ..., 99a, 99b connected to wiring for supplying power from the second voltage applying unit 36 ​​are provided at both ends of each of the plurality of electrode units 91 to 99. All of the terminals 91a to 99b are provided on the outer periphery of the heater unit 150.

[0142] (Example 3)

[0143] Reference Fig.10 , Example 3 is described. Fig.10The electrostatic chuck 24 of Example 3 is Figure 3 A cross-sectional view at the same position. The structure of the substrate 80 in Example 3 is different from that in Example 1. Hereinafter, the differences from Example 1 will be mainly described.

[0144] The substrate 80 of Example 3 has a structure in which insulating layers 80b and 80c made of sintered ceramic are provided on both surfaces of a metal planar core member 80a.

[0145] <Method of Manufacturing Electrostatic Chuck 24>

[0146] The insulating layers 80b and 80c are attached to both surfaces of the core member 80a by an adhesive. The electrode layer 240a and the dielectric layer 240b are formed on the lower surface of the insulating layer 80b by thermal spraying, thereby forming the electrostatic chuck portion 240. The electrode layer 150a and the insulating layer 150b are formed on the upper surface of the insulating layer 80c by thermal spraying, thereby forming the heater portion 150. Alternatively, the substrate 80 may be manufactured by hollowing out the inside of a sintered ceramic plate and pouring a metal material therein.

[0147] In the structure of Example 3, since the adsorption electrode 2 and the heater electrode 90 are also insulated by the insulating layers 80b and 80c made of sintered ceramic, it is possible to suppress the generation of arcs between the adsorption electrode 2 and the heater electrode 90. In addition, since the core member 80a is a metal plate, it has high processability and can easily form a complex structure such as arranging a water cooling pipe inside.

[0148] <Method for manufacturing electronic device>

[0149] Next, an example of a method for manufacturing an electronic device using the film-forming apparatus of this embodiment will be described. Hereinafter, as an example of an electronic device, the structure and manufacturing method of an organic EL display device will be described.

[0150] First, the organic EL display device to be manufactured will be described. Fig.11 (a) is an overall view of the organic EL display device 60. Fig.11 (b) shows the cross-sectional structure of a pixel. Fig.11As shown in (a), in the display area 61 of the organic EL display device 60, a plurality of pixels 62 having a plurality of light-emitting elements are arranged in a matrix. The details will be described later, but the light-emitting elements each have the following structure, which has an organic layer sandwiched by a pair of electrodes. In addition, the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 61. In the present embodiment, in the case of an organic EL display device, a pixel 62 is formed by a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B that show different light. The pixel 62 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, as long as it is at least one color, and it is not particularly limited.

[0151] Fig.11 (b) is Fig.11 Schematic diagram of a partial cross-section at line BB of (a). The pixel 62 has an organic EL element, which includes an anode 64, a hole transport layer 65, any one of the light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate S. The hole transport layer 65, the light-emitting layers 66R, 66G, 66B, and the electron transport layer 67 are equivalent to organic layers. In addition, in the present embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are respectively formed into patterns corresponding to light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light. In addition, the anode 64 is formed separately for each light-emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common in the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited due to foreign matter, an insulating layer 69 is provided between the anode 64. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

[0152] exist Fig.11 In (b), the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, they can also be formed by multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having the following energy band structure can be formed between the anode 64 and the hole transport layer 65, and the energy band structure can smoothly inject holes from the anode 64 to the hole transport layer 65. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

[0153] Next, an example of a method for manufacturing an organic EL display device is specifically described. First, a substrate S having a circuit (not shown) for driving the organic EL display device and an anode 64 formed thereon is prepared. An acrylic resin is formed by spin coating on the substrate S having the anode 64 formed thereon, and the acrylic resin is patterned by photolithography so that an opening is formed in the portion where the anode 64 is formed, and an insulating layer 69 is formed. The opening portion corresponds to a light-emitting region where the light-emitting element actually emits light.

[0154] The substrate S with the patterned insulating layer 69 is carried into the first organic material film forming device, and the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 of the display area. The hole transport layer 65 is formed by vacuum evaporation. Since the hole transport layer 65 is actually formed to a size larger than the display area 61, a high-definition mask is not required.

[0155] Next, the substrate S formed up to the hole transport layer 65 is carried into the second organic material film forming device and held by an electrostatic chuck. The substrate S and the mask M are aligned, and the mask M is held by an electrostatic chuck via the substrate S, and a light-emitting layer 66R emitting red light is formed on the portion of the substrate S where the element emitting red light is arranged.

[0156] Similar to the film formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the third organic material film-forming device, and the light-emitting layer 66B emitting blue light is formed by the fourth organic material film-forming device. After the film formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed in the entire display area 61 by the fifth film-forming device. The electron transport layer 67 is formed as a common layer on the light-emitting layers 66R, 66G, and 66B of the three colors.

[0157] The substrate S formed up to the electron transport layer 67 is moved to the metallic evaporation material film forming device, and a film is formed on the cathode 68. After that, it is moved to the plasma CVD device and a film is formed on the protective layer 70, and the organic EL display device 60 is completed. From the time when the substrate S with the patterned insulating layer 69 is moved into the film forming device to the completion of the film formation of the protective layer 70, if exposed to an atmosphere containing moisture and oxygen, the light-emitting layer composed of the organic EL material may be degraded by moisture and oxygen. Therefore, in this embodiment, the substrate S is moved in and out of the film forming device in a vacuum atmosphere or an inert gas atmosphere.

[0158] The above-described embodiment is an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment, but can be modified appropriately within the scope of the technical concept.

Claims

1. An electrostatic chuck for adsorbing an adsorbed object by utilizing electrostatic force, characterized in that: The electrostatic chuck has: A substrate made of sintered ceramic; an electrostatic chuck portion, the electrostatic chuck portion being disposed on the first surface of the substrate and comprising an adsorption electrode therein; and a heater portion, the heater portion being provided on a second surface of the substrate opposite to the first surface and internally including a heater electrode and an insulating layer composed of an insulator formed on the heater electrode, The base material satisfies at least one of low porosity, high dielectric strength, and high volume resistivity relative to an insulator constituting the insulating layer of the heater portion.

2. The electrostatic chuck according to claim 1, characterized in that The heater electrode is composed of a sprayed layer formed on the second surface of the substrate, The insulating layer of the heater portion is composed of a thermal sprayed layer formed on the heater electrode.

3. The electrostatic chuck according to claim 1 or 2, characterized in that: The electrostatic chuck portion includes an insulating layer made of an insulator formed on the adsorption electrode.

4. The electrostatic chuck according to claim 3, characterized in that The adsorption electrode is composed of a sprayed layer formed on the first surface of the substrate. The insulating layer of the electrostatic chuck portion is composed of a thermal sprayed layer formed on the adsorption electrode.

5. The electrostatic chuck according to claim 1 or 2, characterized in that: The electrostatic chuck portion is provided on the first surface of the substrate without an adhesive layer, The heater unit is provided on the second surface of the substrate without an adhesive layer interposed therebetween.

6. The electrostatic chuck according to claim 1 or 2, characterized in that: The lower surface of the substrate is the first surface, and the upper surface of the substrate is the second surface.

7. The electrostatic chuck according to claim 1 or 2, characterized in that: The heater electrode has a plurality of electrode portions, The plurality of electrode portions are arranged at positions corresponding to the plurality of regions set on the second surface, respectively.

8. The electrostatic chuck according to claim 7, characterized in that A heat amount generated by a peripheral electrode portion corresponding to a region located at a peripheral portion of the second surface among the plurality of regions is greater than a heat amount generated by a central electrode portion corresponding to a region located at a central portion of the second surface among the plurality of regions.

9. The electrostatic chuck according to claim 8, characterized in that The electrical resistance of the peripheral electrode portion is greater than the electrical resistance of the central electrode portion.

10. The electrostatic chuck according to claim 8, characterized in that The film thickness of the peripheral electrode portion is smaller than the film thickness of the central electrode portion.

11. The electrostatic chuck according to claim 8, wherein: The width of the peripheral electrode portion is narrower than the width of the central electrode portion.

12. The electrostatic chuck according to claim 8, wherein: The voltage applied to the peripheral electrode portion is larger than the voltage applied to the central electrode portion.

13. The electrostatic chuck according to claim 7, wherein: Terminals of wiring for supplying power to the plurality of electrode portions are provided on the outer periphery of the heater portion.

14. The electrostatic chuck according to claim 1 or 2, characterized in that: A wiring for supplying power from the outside to the adsorption electrode is taken out from the side of the electrostatic chuck where the electrostatic chuck portion is provided. A wiring line for supplying electric power from the outside to the heater electrode is taken out from the side of the electrostatic chuck where the heater portion is provided.

15. An electrostatic chuck for adsorbing an adsorbed object by utilizing electrostatic force, characterized in that: The electrostatic chuck has: A substrate made of sintered ceramic; an electrostatic chuck portion, the electrostatic chuck portion being disposed on the first surface of the substrate and comprising an adsorption electrode therein; and a heater portion provided on a second surface of the substrate opposite to the first surface and including a heater electrode therein, The heater electrode is composed of a sprayed layer formed on the second surface of the substrate, The heater portion has an insulating layer composed of a thermal sprayed layer formed on the heater electrode.

16. A film forming device for forming a film of a vapor deposition material on a substrate via a mask, characterized in that: The film forming device comprises: The electrostatic chuck according to any one of claims 1, 2 and 15, wherein the electrostatic chuck adsorbs the substrate as the adsorbed body to the electrostatic chuck portion; as well as a substrate holding member that holds the substrate, In a state where the substrate held by the substrate holding member is sucked onto the electrostatic chuck portion, a film is formed on a surface of the substrate opposite to a surface sucked by the electrostatic chuck.

17. The film forming device according to claim 16, characterized in that: A film is formed on the lower surface of the substrate while the upper surface of the substrate is sucked by the electrostatic chuck.

18. A method for adsorbing an adsorbed object onto an electrostatic chuck, characterized in that: The electrostatic chuck has: A substrate made of sintered ceramic; an electrostatic chuck portion, the electrostatic chuck portion being disposed on the first surface of the substrate and comprising an adsorption electrode therein; and a heater portion, the heater portion being provided on a second surface of the substrate opposite to the first surface and internally including a heater electrode and an insulating layer formed on the heater electrode and made of an insulator, The substrate satisfies at least one of low porosity, high dielectric strength and high volume resistivity relative to the insulator constituting the insulating layer of the heater portion. The adsorption method has: A step of applying a voltage to the adsorption electrode to adsorb the adsorbed object onto the electrostatic chuck portion; and A step of applying a voltage to the heater electrode to heat the adsorbent.

19. A film forming method, comprising forming a film of a vapor deposition material on a substrate via a mask, wherein: The film forming method has the following features: A step of adsorbing the substrate as the adsorbed body onto the electrostatic chuck portion by the adsorption method according to claim 18; A step of heating the substrate by the adsorption method according to claim 18; and A step of forming a film of the vapor deposition material on the substrate through the mask.

20. A method for manufacturing an electronic device, characterized in that: An electronic device is manufactured using the film forming method according to claim 19.

21. A method for manufacturing an electrostatic chuck, wherein the electrostatic chuck comprises an electrostatic chuck portion and a heater portion, wherein the electrostatic chuck portion is used to adsorb an adsorbed object by utilizing electrostatic force, wherein: The manufacturing method of the electrostatic chuck comprises: forming an adsorption electrode of the electrostatic chuck portion on a first surface of a sintered ceramic substrate; a step of forming an insulating layer composed of an insulator on the adsorption electrode by sputtering; forming a heater electrode of the heater portion on a second surface of the substrate opposite to the first surface by thermal spraying; and A step of forming an insulating layer made of an insulator on the heater electrode by thermal spraying.

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