Semiconductor laser

Abstract

The semiconductor laser sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, track hybridization layers are arranged between the upper waveguide layer and the upper limiting layer, and the track hybridization layers comprise the first track hybridization layer, the second track hybridization layer and the third track hybridization layer. Specific covalent bond energy distribution and dielectric constant distribution of the orbital hybridization layer enhance energy band hybridization, Pz orbital hybridization in the vertical direction and overlapping of real space, interface conductivity and dual energy band inversion are regulated and controlled, an electron and hole transmission path along a basal plane is enhanced, the hole ionization rate and the hole carrier concentration are enhanced, and the performance of the solar cell is improved. The hole expansion capability is improved, the capacitance value of the epitaxial structure is improved, and the human body mode ESD of the laser HBM is enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is as high as KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes spontaneously radiate incoherent light from high energy levels to low energy levels without external effects, while lasers radiate stimulated transitions. The energy of induced photons should be equal to the difference in energy levels of electron transitions, generating photons and induced photons that are completely coherent light; 4) Different principles: light-emitting diodes produce radiation recombination and luminescence under the action of external voltage when electron holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met before they can be lased. The carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor lasers have the following problems: 1) high internal defect density, unsatisfactory crystal quality, low capacitance, poor current expansion, and low capacitance in the epitaxial structure, resulting in HBM human body model ESD deviation; 2) the Mg acceptor activation energy of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, leading to electron leakage and low hole injection efficiency. Summary of the invention

[0005] The present invention provides a semiconductor laser. The specific covalent bond energy distribution and dielectric constant distribution of the orbital hybrid layer enhance the energy band hybridization, enhance the Pz orbital hybridization in the vertical direction and the overlap of the real space, regulate the interface conductivity and the double energy band inversion, enhance the electron and hole transmission path along the basal plane, enhance the hole ionization rate and the hole carrier concentration, improve the hole expansion ability, improve the capacitance value of the epitaxial structure, and enhance the HBM human body model ESD of the laser.

[0006] The present invention provides a semiconductor laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer, wherein an orbital hybrid layer is provided between the upper waveguide layer and the upper limiting layer.

[0007] The orbital hybrid layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGa AsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination;

[0008] The orbital hybrid layer includes a first orbital hybrid layer, a second orbital hybrid layer and a third orbital hybrid layer.

[0009] Preferably, the covalent bond energy distribution of the first orbital hybrid layer has a first quadrant curve distribution of the function y=A+B*x / lnx, and the covalent bond energy distribution of the second orbital hybrid layer has a logarithmic function y=C+D*log a The x(0<a<1) curve distribution, the covalent bond energy distribution of the third orbital hybrid layer has the function y=E+F*x / lnx fourth quadrant curve distribution;

[0010] Preferably, the covalent bond energy of the first orbital hybrid layer is d, the covalent bond energy of the second orbital hybrid layer is e, and the covalent bond energy of the third orbital hybrid layer is f, wherein: 0.5≤d≤e≤f≤5 (eV).

[0011] Preferably, the dielectric constant distribution of the first orbital hybrid layer has a function y=G+H*lnx / x curve distribution, and the dielectric constant distribution of the second orbital hybrid layer has a logarithmic function y=I+J*log b The x(b>1) curve distribution, the dielectric constant distribution of the third orbital hybrid layer has the function y=K+L*sinx / x 2 The third quadrant curve distribution.

[0012] Preferably, the dielectric constant of the first orbital hybrid layer is g, the dielectric constant of the second orbital hybrid layer is h, and the dielectric constant of the third orbital hybrid layer is i, wherein: 5≤i≤h≤g≤15.

[0013] Preferably, the valence band effective state density distribution of the first orbital hybrid layer has a function y=M+N*lnx / e x Curve distribution, the valence band effective state density distribution of the second orbital hybrid layer has a logarithmic function y = O + P * log b The x(b>1) curve distribution, the valence band effective state density distribution of the third orbital hybrid layer has the function y=Q+R*xe x Curve distribution; the valence band effective state density of the first orbital hybrid layer is j, the valence band effective state density of the second orbital hybrid layer is k, and the valence band effective state density of the third orbital hybrid layer is l, wherein: 1E18≤l≤k≤j≤9E20 (cm / s).

[0014] Preferably, the conduction band effective state density distribution of the first orbital hybrid layer has a function y=S+T*sinx / x 2 The first quadrant curve distribution, the conduction band effective state density distribution of the second orbital hybrid layer has a logarithmic function y=U+V*log b x(b>1) curve distribution, the conduction band effective state density distribution of the third orbital hybrid layer has the function y=W+Z*e x / x 2 The second quadrant curve is distributed; the conduction band effective state density of the first orbital hybrid layer is m, the conduction band effective state density of the second orbital hybrid layer is n, and the conduction band effective state density of the third orbital hybrid layer is p, wherein: 1E16≤m≤p≤n≤1E19 (cm / s).

[0015] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3, BN, diamond, any one or any combination thereof, with a thickness of 10 to 100 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof, with a thickness of 10 to 200 angstroms.

[0016] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination.

[0017] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO 2 / SiN x Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0018] Compared with the prior art, the semiconductor laser provided by the embodiment of the present invention has the following beneficial effects:

[0019] The specific covalent bond energy distribution and dielectric constant distribution of the orbital hybrid layer enhance the energy band hybridization, enhance the hybridization between Pz orbitals and Pz orbitals in the vertical direction and the overlap in real space, regulate the interface conductivity and double energy band inversion, enhance the electron and hole transmission path along the basal plane, enhance the hole ionization rate and hole carrier concentration, improve the hole expansion ability, improve the capacitance value of the epitaxial structure, and enhance the HBM human body model ESD of the laser.

[0020] The specific valence band effective state density distribution and the specific conduction band effective state density distribution of the orbital hybrid layer improve the interface conductivity and charge transfer of the laser, enhance the matching degree of electron holes in the quantum well, reduce the contact resistance, voltage and threshold current density, and enhance the lateral and longitudinal expansion of the current, thereby enhancing the ESD performance. The HBM human body model ESD pass rate of the laser can be increased from more than 50% to 98% at 100V, and from 15% to more than 93% at 200V. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic structural diagram of a semiconductor laser provided by the present invention.

[0022] Figure 2 This is a SIMS secondary ion mass spectrum of a semiconductor laser provided by the present invention.

[0023] In the figure, markings are as follows: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: orbital hybridization layer; 106a: first orbital hybridization layer; 106b: second orbital hybridization layer; 106c: third orbital hybridization layer. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to solve the above problems, a semiconductor laser provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0026] Reference Figure 1-2 The present invention provides a semiconductor laser, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein an orbital hybridization layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105.

[0027] The track hybrid layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, In GaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination;

[0028] The orbital hybrid layer 106 includes a first orbital hybrid layer 106 a , a second orbital hybrid layer 106 b , and a third orbital hybrid layer 106 c .

[0029] The covalent bond energy distribution of the first orbital hybrid layer 106a has a first quadrant curve distribution of the function y=A+B*x / lnx, and the covalent bond energy distribution of the second orbital hybrid layer 106b has a logarithmic function y=C+D*log a x(0<a<1) curve distribution, the covalent bond energy distribution of the third orbital hybrid layer 106c has the function y=E+F*x / lnx fourth quadrant curve distribution. The covalent bond energy of the first orbital hybrid layer 106a is d, the covalent bond energy of the second orbital hybrid layer 106b is e, and the covalent bond energy of the third orbital hybrid layer 106c is f, where: 0.5≤d≤e≤f≤5(eV). The dielectric constant distribution of the first orbital hybrid layer 106a has the function y=G+H*lnx / x curve distribution, and the dielectric constant distribution of the second orbital hybrid layer 106b has the logarithmic function y=I+J*log b The dielectric constant distribution of the third orbital hybrid layer 106c has the function y=K+L*sinx / x 2 The third quadrant curve distribution: The dielectric constant of the first orbital hybrid layer 106a is g, the dielectric constant of the second orbital hybrid layer 106b is h, and the dielectric constant of the third orbital hybrid layer 106c is i, wherein: 5≤i≤h≤g≤15.

[0030] In summary, the specific covalent bond energy distribution and dielectric constant distribution of the orbital hybrid layer enhance the energy band hybridization, enhance the hybridization between Pz orbitals and Pz orbitals in the vertical direction and the overlap in real space, regulate the interface conductivity and double energy band inversion, enhance the electron and hole transmission path along the basal plane, enhance the hole ionization rate and hole carrier concentration, improve the hole expansion ability, improve the capacitance value of the epitaxial structure, and enhance the HBM human body mode ESD of the laser.

[0031] The valence band effective state density distribution of the first orbital hybrid layer 106a has a function y=M+N*lnx / e x Curve distribution, the valence band effective state density distribution of the second orbital hybrid layer 106b has a logarithmic function y=O+P*log b The x(b>1) curve distribution, the valence band effective state density distribution of the third orbital hybrid layer 106c has the function y=Q+R*xe x Curve distribution; the valence band effective state density of the first orbital hybrid layer 106a is j, the valence band effective state density of the second orbital hybrid layer 106b is k, and the valence band effective state density of the third orbital hybrid layer 106c is l, where: 1E18≤l≤k≤j≤9E20(cm / s). The conduction band effective state density distribution of the first orbital hybrid layer 106a has the function y=S+T*sinx / x 2 The first quadrant curve distribution, the conduction band effective state density distribution of the second orbital hybrid layer 106b has a logarithmic function y=U+V*log b The distribution of the x(b>1) curve, the conduction band effective state density distribution of the third orbital hybrid layer 106c has the function y=W+Z*e x / x 2 The second quadrant curve distribution; the conduction band effective state density of the first orbital hybrid layer 106a is m, the conduction band effective state density of the second orbital hybrid layer 106b is n, and the conduction band effective state density of the third orbital hybrid layer 106c is p, wherein: 1E16≤m≤p≤n≤1E19 (cm / s).

[0032] In summary, the specific valence band effective state density distribution and the specific conduction band effective state density distribution of the orbital hybrid layer improve the interface conductivity and charge transfer of the laser, enhance the matching degree of electron holes in the quantum well, reduce the contact resistance, voltage and threshold current density, and enhance the lateral and longitudinal expansion of the current, thereby improving the ESD performance. The HBM human body model ESD pass rate of the laser can be increased from more than 50% to 98% at 100V, and the pass rate at 200V can be increased from 15% to more than 93%.

[0033] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0034] Blue Laser Project Conventional laser Laser of the present invention Range of change <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.74 -69％ Voltage (V) 6.5 4.29 -23％ Series resistance (Ω) 17 6.3 -59％ HBM 100KV ESD pass rate 50％ 98％ 96％ HBM 200KV ESD pass rate 15％ 93％ 520％

[0035] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination thereof, with a thickness of 10 to 100 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof, with a thickness of 10 to 200 angstroms.

[0036] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof.

[0037] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO 2 / SiN xComposite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0038] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: An orbital hybrid layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105), The orbital hybrid layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The orbital hybrid layer (106) includes a first orbital hybrid layer (106a), a second orbital hybrid layer (106b) and a third orbital hybrid layer (106c).

2. A semiconductor laser according to claim 1, characterized in that: The covalent bond energy distribution of the first orbital hybrid layer (106a) has a first quadrant curve distribution of the function y=A+B*x / lnx, and the covalent bond energy distribution of the second orbital hybrid layer (106b) has a logarithmic function y=C+D*log a The x(0<a<1) curve distribution, the covalent bond energy distribution of the third orbital hybrid layer (106c) has the function y=E+F*x / lnx fourth quadrant curve distribution.

3. A semiconductor laser according to claim 2, characterized in that: The covalent bond energy of the first orbital hybrid layer (106a) is d, the covalent bond energy of the second orbital hybrid layer (106b) is e, and the covalent bond energy of the third orbital hybrid layer (106c) is f, wherein: 0.5≤d≤e≤f≤5 (eV).

4. A semiconductor laser according to claim 1, characterized in that: The dielectric constant distribution of the first orbital hybrid layer (106a) has a function y=G+H*lnx / x curve distribution, and the dielectric constant distribution of the second orbital hybrid layer (106b) has a logarithmic function y=I+J*log b The distribution of the dielectric constant of the third orbital hybrid layer (106c) has the function y=K+L*sinx / x 2 The third quadrant curve distribution.

5. A semiconductor laser according to claim 4, characterized in that: The dielectric constant of the first orbital hybrid layer (106a) is g, the dielectric constant of the second orbital hybrid layer (106b) is h, and the dielectric constant of the third orbital hybrid layer (106c) is i, wherein: 5≤i≤h≤g≤15.

6. A semiconductor laser according to claim 1, characterized in that: The valence band effective state density distribution of the first orbital hybrid layer (106a) has a function y=M+N*lnx / e x Curve distribution, the valence band effective state density distribution of the second orbital hybrid layer (106b) has a logarithmic function y=O+P*log b x(b>1) curve distribution, the valence band effective state density distribution of the third orbital hybrid layer (106c) has the function y=Q+R*xe x Curve distribution; the valence band effective state density of the first orbital hybrid layer (106a) is j, the valence band effective state density of the second orbital hybrid layer (106b) is k, and the valence band effective state density of the third orbital hybrid layer (106c) is l, wherein: 1E18≤l≤k≤j≤9E20 (cm / s).

7. A semiconductor laser according to claim 1, characterized in that: The conduction band effective state density distribution of the first orbital hybrid layer (106a) has a function y=S+T*sinx / x 2 The first quadrant curve distribution, the conduction band effective state density distribution of the second orbital hybrid layer (106b) has a logarithmic function y=U+V*log b x(b>1) curve distribution, the conduction band effective state density distribution of the third orbital hybrid layer (106c) has the function y=W+Z*e x / x 2 The second quadrant curve is distributed; the conduction band effective state density of the first orbital hybrid layer (106a) is m, the conduction band effective state density of the second orbital hybrid layer (106b) is n, and the conduction band effective state density of the third orbital hybrid layer (106c) is p, wherein: 1E16≤m≤p≤n≤1E19 (cm / s).

8. A semiconductor laser according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. A semiconductor laser according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The semiconductor laser according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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