Flow deflector, semiconductor refrigeration device and preparation method of semiconductor refrigeration device

Abstract

The invention relates to a flow deflector, a semiconductor refrigeration device and a preparation method of the semiconductor refrigeration device. The flow deflector is used for a welding part and comprises a flow deflector body, the flow deflector body is provided with a first surface, and the first surface is used for arranging the welding part; wherein an exhaust groove is formed in the flow guide body, a groove opening of the exhaust groove is formed in the first surface, and the orthographic projection of the welding piece on the plane where the first surface is located is overlapped with the orthographic projection of the exhaust groove on the plane where the first surface is located. Therefore, according to the flow deflector, the semiconductor refrigeration device and the manufacturing method of the semiconductor refrigeration device, welding cavities formed by the welding part can be reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a guide plate, a semiconductor refrigeration device and a preparation method thereof. Background Art

[0002] Semiconductor cooling chips are widely used in optical communications, automotive radar, infrared sensors, high-power lasers and other industries. Semiconductor cooling chips mainly include upper substrates, thermoelectric semiconductor materials and lower substrates. Thermoelectric semiconductor materials include multiple P / N grains, and the P / N grains are assembled with the upper and lower substrates through conductive welding parts.

[0003] In the related art, during the semiconductor cooling plate assembly process, the P-type and N-type grains of the thermoelectric semiconductor material need to be placed on the guide plate, and then the entire assembly is welded by high-temperature heating, so that the thermoelectric semiconductor material and the guide plates of the upper and lower substrates are fixed and electrically connected. However, the conductive welding parts between the thermoelectric semiconductor material and the guide plate are prone to form welding voids. Summary of the invention

[0004] Based on this, it is necessary to provide a guide plate, a semiconductor refrigeration device and a preparation method thereof, which can reduce welding voids formed by welded parts.

[0005] In a first aspect, an embodiment of the present application provides a guide plate for a welding piece, the guide plate comprising: a guide body, the guide body having a first surface, the first surface being used to arrange the welding piece;

[0006] Wherein, an exhaust groove is arranged on the guide body, the notch of the exhaust groove is arranged on the first surface, and the orthographic projection of the welding part on the plane where the first surface is located overlaps with the orthographic projection of the exhaust groove on the plane where the first surface is located.

[0007] The guide plate provided in the embodiment of the present application is provided with an exhaust groove. During the welding process of the guide plate, the gas converted from the flux after being exposed to high temperature can enter the exhaust groove and be discharged through the exhaust groove to escape to the outside of the semiconductor refrigeration device, thereby reducing the welding voids formed by the welded parts and the welding voids formed between the semiconductor grains and the guide plate, thereby improving the performance reduction of the semiconductor refrigeration device or extending the service life.

[0008] In one of the embodiments, the weldment includes a first sub-weldment and a second sub-weldment;

[0009] There are multiple exhaust grooves, the multiple exhaust grooves include a first exhaust groove and a second exhaust groove, and there is a spacing between the first exhaust groove and the second exhaust groove;

[0010] The orthographic projection of the first sub-welding member on the plane where the first surface is located overlaps with the orthographic projection of the first exhaust groove on the plane where the first surface is located;

[0011] The orthographic projection of the second sub-welding member on the plane where the first surface is located overlaps with the orthographic projection of the second exhaust groove on the plane where the first surface is located.

[0012] In one embodiment, there is a gap between the first welding sub-component and the second welding sub-component;

[0013] And / or, along the extension direction of the guide body, the guide body includes a first sub-section, a second sub-section and a third sub-section that are arranged in sequence and connected, the first exhaust groove is provided on the first sub-section, and the second exhaust groove is provided on the third sub-section.

[0014] In one embodiment, the exhaust groove is a strip-shaped groove, and the exhaust groove extends along the extension direction of the flow guide body;

[0015] Or, the exhaust groove includes a first sub-exhaust groove and a second sub-exhaust groove, the first sub-exhaust groove extends along the extension direction of the guide body, the extension direction of the second sub-exhaust groove intersects with the extension direction of the guide body, and the first sub-exhaust groove and the second sub-exhaust groove intersect and communicate with each other;

[0016] Alternatively, the exhaust groove includes a plurality of third sub-exhaust grooves that are spaced apart from each other, and the plurality of third sub-exhaust grooves are arranged along an annular path.

[0017] In one embodiment, the depth of the exhaust groove gradually decreases from the center to the edge of the exhaust groove.

[0018] and / or, the opening size of the exhaust groove gradually increases along the direction from the groove bottom to the groove mouth of the exhaust groove;

[0019] and / or, the depth of the exhaust groove is smaller than the thickness of the guide body;

[0020] And / or, the side wall of the exhaust groove is annular, or the side surface of the guide body includes a second surface, the second surface is connected to the first surface and intersects with the first surface, the second surface is provided with an opening, and the opening is connected to the exhaust groove;

[0021] And / or, the ratio of the dimension of the exhaust groove along the direction perpendicular to the extension direction of the flow guide body to the dimension of the flow guide body along the direction perpendicular to the extension direction of the flow guide body is in the range of 1 / 10-3 / 10.

[0022] In a second aspect, an embodiment of the present application provides a semiconductor refrigeration device, comprising a semiconductor grain, a welding part, and a guide plate according to the first aspect, wherein the semiconductor grain and the guide plate are welded to each other via the welding part.

[0023] In one of the embodiments, the orthographic projection of the exhaust groove on the plane where the first surface of the guide plate is located is a first orthographic projection, the orthographic projection of the semiconductor grain on the plane where the first surface is located is a second orthographic projection, the first orthographic projection includes a first sub-projection and a second sub-projection connected, the first sub-projection is located in the second orthographic projection, and the second sub-projection does not overlap with the second orthographic projection;

[0024] The area of ​​the first sub-projection is greater than the area of ​​the second sub-projection.

[0025] In one embodiment, the side surface of the guide body includes a second surface, which is connected to the first surface and intersects with the first surface. The second surface is provided with an opening, which is connected to the exhaust groove. The orthographic projection of the exhaust groove on the plane where the first surface of the guide plate is located is located within the orthographic projection of the semiconductor grain on the plane where the first surface is located.

[0026] In one embodiment, there are multiple semiconductor grains connected to the guide plate, the multiple semiconductor grains include a first semiconductor grain and a second semiconductor grain, the welding part includes a first sub-welding part and a second sub-welding part, the first sub-welding part is connected between the first semiconductor grain and the guide plate, and the second sub-welding part is connected between the second semiconductor grain and the guide plate.

[0027] In a third aspect, an embodiment of the present application provides a method for preparing a semiconductor refrigeration device, which is used to prepare the semiconductor refrigeration device in the second aspect. The method for preparing the semiconductor refrigeration device includes:

[0028] A welding mixture is arranged on the first surface of the guide plate; the welding mixture includes welding material and soldering flux, and the orthographic projection of the welding mixture on the plane where the first surface is located overlaps with the orthographic projection of the exhaust groove of the guide plate on the plane where the first surface is located;

[0029] Placing the semiconductor die on the side of the solder mixture facing away from the guide plate;

[0030] The semiconductor die, the welding mixture and the guide plate are heated to form a welding piece with the welding mixture; the semiconductor die and the guide plate are connected by welding through the welding piece. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of the structure of a semiconductor refrigeration device provided in an embodiment of the present application.

[0032] Figure 2 for Figure 1 Schematic diagram of the enlarged structure of area A in the middle.

[0033] Figure 3 Another structural schematic diagram of the semiconductor refrigeration device provided in an embodiment of the present application.

[0034] Figure 4 A schematic structural diagram of a first substrate and a plurality of guide plates provided in an embodiment of the present application.

[0035] Figure 5 A schematic diagram of the structure of the guide plate provided in an embodiment of the present application.

[0036] Figure 6 A schematic flow chart of a method for preparing a semiconductor refrigeration device provided in an embodiment of the present application.

[0037] Description of reference numerals:

[0038] 100, semiconductor refrigeration device; 101, guide plate; 110, guide body; 111, first surface; 112, second surface; 120, exhaust groove; 120a, first exhaust groove; 120b, second exhaust groove; 131, first sub-section; 132, second sub-section; 133, third sub-section; 140, opening; 150, welding part; 151, first sub-welding part; 152, second sub-welding part; 161, first substrate; 162, second substrate; 171, first pad; 172, second pad; 180, semiconductor grain; 181, first semiconductor grain; 182, second semiconductor grain. DETAILED DESCRIPTION

[0039] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0040] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0041] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0042] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0043] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0044] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0045] In the related art, during the semiconductor refrigeration plate assembly process, it is necessary to place the P-type grains and N-type grains of the thermoelectric semiconductor material on the guide plate, set solder paste between the thermoelectric semiconductor material and the guide plate, and then weld the entire assembly by high-temperature heating, so as to fix the thermoelectric semiconductor material and the guide plates of the upper and lower substrates and achieve electrical connectivity.

[0046] However, the side of the guide plate facing the thermoelectric semiconductor material is a complete plane, and the flux in the solder paste turns into gas after high temperature and is not easy to escape, resulting in the formation of welding voids in the solder paste between the thermoelectric semiconductor material and the guide plate, thereby causing the performance of the semiconductor refrigerator to decrease or the service life to shorten.

[0047] To solve the above problems, the embodiments of the present application provide a guide plate, a semiconductor refrigeration device and a preparation method thereof, which can reduce welding voids formed by welding parts, thereby reducing welding voids between semiconductor grains and guide plates, improving the performance of the semiconductor refrigeration device or extending its service life.

[0048] The following will be combined Figure 1-Figure 6 The guide plate 101, the semiconductor refrigeration device 100 and the preparation method thereof provided in the embodiment of the present application are described.

[0049] See also Figure 1 and Figure 2 An embodiment of the present application provides a semiconductor refrigeration device 100, which includes a guide plate 101, a semiconductor crystal grain 180, and a welding member 150. The welding member 150 is arranged between the semiconductor crystal grain 180 and the guide plate 101, and the semiconductor crystal grain 180 and the guide plate 101 are welded and connected by the welding member 150.

[0050] In some embodiments, see Figure 3 The semiconductor grains 180 may be made of thermoelectric semiconductor materials. The number of semiconductor grains 180 connected to the guide plate 101 is multiple, and the multiple semiconductor grains 180 include a first semiconductor grain 181 and a second semiconductor grain 182. One of the first semiconductor grain 181 and the second semiconductor grain 182 may be configured as a P-type semiconductor grain, and the other of the first semiconductor grain 181 and the second semiconductor grain 182 may be configured as an N-type semiconductor grain. The first semiconductor grain 181 and the second semiconductor grain 182 may form an electric couple together. The material of the guide plate 101 may be a conductive material. The guide plate 101 may electrically connect the first semiconductor grain 181 and the second semiconductor grain 182 disposed on the guide plate 101.

[0051] In some embodiments, the weld 150 may be formed by a welding mixture through a welding process. The welding mixture may include welding material and flux.

[0052] Exemplarily, the solder mixture may be solder paste, and the solder material may be tin.

[0053] In some embodiments, see Figure 3The welding member 150 includes a first sub-welding member 151 and a second sub-welding member 152 . The first sub-welding member 151 is connected between the first semiconductor crystal grain 181 and the guide plate 101 , and the second sub-welding member 152 is connected between the second semiconductor crystal grain 182 and the guide plate 101 .

[0054] In some embodiments, there is a distance between the first sub-welding part 151 and the second sub-welding part 152. In this way, when high-temperature welding is performed between the semiconductor grain 180 and the guide plate 101, there can be a distance between the welding mixture corresponding to the first sub-welding part 151 and the welding mixture corresponding to the second sub-welding part 152, so as to avoid piling up the welding mixture corresponding to the first sub-welding part 151 and the welding mixture corresponding to the second sub-welding part 152, which results in the slurry formed by the high-temperature welding being a larger whole with excessive fluidity. This is beneficial for limiting the slurry of the first sub-welding part 151 and the slurry of the second sub-welding part 152 to a greater extent in their respective preset welding positions, ensuring that the welding material at the preset welding position of the guide plate 101 is sufficient, so that the welding stability between the first semiconductor grain 181 and the guide plate 101 is higher, and the welding stability between the second semiconductor grain 182 and the guide plate 101 is higher.

[0055] In some embodiments, see Figure 3 The semiconductor refrigeration device 100 may further include a first substrate 161 and a second substrate 162, which are arranged opposite to each other and spaced apart along the thickness direction of the first substrate 161. One of the first substrate 161 and the second substrate 162 may be a cold end substrate, and the other of the first substrate 161 and the second substrate 162 may be a hot end substrate. The guide plate 101 and the semiconductor grain 180 are both arranged between the first substrate 161 and the second substrate 162. A guide plate 101 may be arranged between the semiconductor grain 180 and the first substrate 161, and the guide plate 101 is connected between the semiconductor grain 180 and the first substrate 161. A guide plate 101 may also be arranged between the semiconductor grain 180 and the second substrate 162, and the guide plate 101 is connected between the semiconductor grain 180 and the second substrate 162.

[0056] For example, see Figure 3 and Figure 4 The first semiconductor grains 181 and the second semiconductor grains 182 may be multiple, and the first semiconductor grains 181 and the second semiconductor grains 182 may be arranged alternately. The number of the galvanic pairs may be multiple, and the multiple galvanic pairs may form an effective series or parallel circuit through the multiple guide plates 101 on the first substrate 161 and the multiple guide plates 101 on the second substrate 162.

[0057] Exemplarily, the material of at least one of the first substrate 161 and the second substrate 162 includes an insulating thermally conductive material.

[0058] Exemplarily, at least one of the first substrate 161 and the second substrate 162 may include a ceramic substrate.

[0059] In some embodiments, see Figure 3 The semiconductor refrigeration device 100 may further include a first solder pad 171 and a second solder pad 172, which are used to electrically connect a series circuit or a parallel circuit formed by a plurality of electric couples to an external power source. The opposite ends of the semiconductor grain 180 may be a first end and a second end, respectively, the first end is connected to the guide plate 101 on the first substrate 161 through a welding member 150, and the second end is also connected to the guide plate 101 on the second substrate 162 through a welding member 150.

[0060] Exemplarily, the working process of the semiconductor refrigeration device 100 can be that electric current passes through the semiconductor grain 180, and due to the characteristics of the thermoelectric semiconductor material of the semiconductor grain 180 itself, heat migration is generated between the two ends of the semiconductor grain 180, thereby moving the heat from the first end of the semiconductor grain 180 to the second end of the semiconductor grain 180, and the second end of the semiconductor grain 180 is placed on the guide plate 101, and then dissipated by the second end of the semiconductor grain 180 and other external heat dissipation structures, such as the second substrate 162 and the heat dissipation structure connected to the second substrate 162, thereby adjusting the temperature of the first end of the semiconductor grain 180.

[0061] The guide plate 101 provided in the embodiment of the present application is described below.

[0062] See also Figure 5 The embodiment of the present application provides a guide plate 101, the guide plate 101 may include a guide body 110, the guide body 110 has a first surface 111, the guide body 110 is provided with an exhaust groove 120, and the notch of the exhaust groove 120 is provided on the first surface 111. The guide plate 101 is used for welding a piece 150, and the first surface 111 is used for setting the welding piece 150. The orthographic projection of the welding piece 150 on the plane where the first surface 111 is located overlaps with the orthographic projection of the exhaust groove 120 on the plane where the first surface 111 is located. In this way, by setting the exhaust groove 120, during the welding process of the guide plate 101 and the semiconductor crystal grain 180, the flux in the welding mixture is transformed into gas after high temperature and can enter the exhaust groove 120, and be discharged through the exhaust groove 120 to escape to the outside of the semiconductor refrigeration device 100, thereby reducing the welding voids formed by the welding part 150, and reducing the formation of welding voids between the semiconductor crystal grain 180 and the guide plate 101, thereby improving the performance reduction of the semiconductor refrigeration device 100 or extending the service life.

[0063] It should be noted that when high-temperature welding is performed between the semiconductor grain 180 and the guide plate 101, the slurry formed after the welding mixture is melted has a certain fluidity. The flow of the slurry needs to be restricted to a large extent between the guide body 110 and the semiconductor grain 180, so as to restrict the welding part 150 to a large extent in the welding position of the guide body 110, ensure that the welding material at the welding position of the guide body 110 is sufficient, and reduce the undesirable phenomena such as voids or cold welds caused by the lack of welding material.

[0064] In some embodiments, in the same guide plate 101 , the number of the exhaust groove 120 is one. Thus, the number of the exhaust grooves 120 is small, and the preparation process of the exhaust grooves 120 can be simplified.

[0065] In some embodiments, see Figure 3 and Figure 5, the number of the exhaust grooves 120 is multiple, and the multiple exhaust grooves 120 include a first exhaust groove 120a and a second exhaust groove 120b, and there is a distance between the first exhaust groove 120a and the second exhaust groove 120b. The orthographic projection of the first sub-welding member 151 on the plane where the first surface 111 is located overlaps with the orthographic projection of the first exhaust groove 120a on the plane where the first surface 111 is located. In this way, by setting the first exhaust groove 120a, during the welding process of the guide plate 101, the flux of the first sub-welding member 151 is converted into gas after high temperature and can be discharged through the first exhaust groove 120a, reducing the welding voids formed by the first sub-welding member 151, thereby reducing the welding voids formed between the first semiconductor grain 181 and the guide plate 101, improving the performance reduction of the semiconductor refrigeration device 100 or extending the service life. The orthographic projection of the second sub-welding component 152 on the plane where the first surface 111 is located overlaps with the orthographic projection of the second exhaust groove 120b on the plane where the first surface 111 is located. In this way, by setting the second exhaust groove 120b, during the welding process of the guide plate 101, the flux of the second sub-welding component 152 turned into gas after high temperature can be discharged through the second exhaust groove 120b, thereby reducing the welding voids formed by the second sub-welding component 152, thereby reducing the formation of welding voids between the second semiconductor grains 182 and the guide plate 101, improving the performance reduction of the semiconductor refrigeration device 100 or extending the service life. In addition, by providing a spacing between the first exhaust groove 120a and the second exhaust groove 120b, the first exhaust groove 120a and the second exhaust groove 120b are separately arranged, which can prevent the molten metal of the first sub-welding component 151 from flowing through the first exhaust groove 120a to the second exhaust groove 120b, resulting in too few first sub-welding components 151 between the first semiconductor grain 181 and the guide plate 101, or prevent the molten metal of the second sub-welding component 152 from flowing through the second exhaust groove 120b to the first exhaust groove 120a, resulting in too few second sub-welding components 152 between the second semiconductor grain 182 and the guide plate 101.

[0066] In some embodiments, see Figure 3 and Figure 5, along the extension direction of the flow guide body 110 (i.e., direction X), the flow guide body 110 includes a first sub-portion 131, a second sub-portion 132, and a third sub-portion 133 which are sequentially arranged and connected, the first exhaust groove 120a is provided on the first sub-portion 131, and the second exhaust groove 120b is provided on the third sub-portion 133. In this way, since the length of the flow guide body 110 in the extension direction is relatively large, by arranging the first sub-portion 131, the second sub-portion 132, and the third sub-portion 133 along the extension direction of the flow guide body 110, the size of the first sub-portion 131 along the extension direction of the flow guide body 110 and perpendicular to the extension direction can be relatively large, which is conducive to improving the flexibility of setting the first exhaust groove 120a on the first sub-portion 131, and is also conducive to increasing the overlapping area of ​​the first sub-portion 131 and the first semiconductor grain 181, and is conducive to improving the welding stability of the first sub-portion 131 and the first semiconductor grain 181. In addition, the dimensions of the third sub-portion 133 along the extension direction and perpendicular to the extension direction of the guide body 110 can be made larger, which is beneficial to improving the flexibility of setting the second exhaust groove 120b on the third sub-portion 133, and can also increase the overlapping area between the third sub-portion 133 and the second semiconductor grain 182, which is beneficial to improving the welding stability of the third sub-portion 133 and the second semiconductor grain 182.

[0067] In some embodiments, see Figure 5 The exhaust groove 120 is a strip-shaped groove, and the exhaust groove 120 extends along the extension direction of the guide body 110 (i.e. Figure 5 In this way, the structure of the strip groove is relatively simple, which is conducive to reducing the difficulty of preparing the exhaust groove 120.

[0068] In some other embodiments, the exhaust groove 120 includes a first sub-exhaust groove and a second sub-exhaust groove, the first sub-exhaust groove extends along the extension direction of the guide body 110, and the extension direction of the second sub-exhaust groove intersects with the extension direction of the guide body 110. For example, the extension direction of the second sub-exhaust groove intersects with the extension direction of the guide body 110 at right angles, and the first sub-exhaust groove 120 and the second sub-exhaust groove 120 intersect and communicate with each other. In this way, the exhaust groove 120 can be in a "cross" shape, so that multi-directional exhaust can be performed through the exhaust groove 120 along the extension direction of the first sub-exhaust groove and the extension direction of the second sub-exhaust groove, which is beneficial to the discharge of gas.

[0069] In some other embodiments, the exhaust groove 120 includes a plurality of third sub-exhaust grooves arranged at intervals, and the plurality of third sub-exhaust grooves are arranged along an annular path. For example, the plurality of third sub-exhaust grooves can be arranged at intervals along the circumference of the semiconductor grain 180. In this way, the volume of a single third sub-exhaust groove can be set smaller, which is conducive to reducing the influence of a single third sub-exhaust groove on the mechanical strength of the flow guide body 110.

[0070] In some embodiments, the depth of the exhaust groove 120 gradually decreases from the center to the edge of the exhaust groove 120. In this way, the depth of the exhaust groove 120 near the center of the exhaust groove 120 can be larger, and the depth of the exhaust groove 120 near the edge of the exhaust groove 120 can be smaller. During the welding process, the molten slurry of the welding member 150 is more easily confined near the exhaust groove 120 and is not easy to flow to the side wall of the guide body 110, which is beneficial to improve the welding stability between the semiconductor grain 180 and the guide body 110. The depth of the exhaust groove 120 is consistent with the thickness direction of the guide body 110 and the first substrate 161.

[0071] In some embodiments, the opening size of the exhaust groove 120 gradually increases along the direction from the bottom of the exhaust groove 120 to the notch. In this way, the opening size of the exhaust groove 120 near the notch of the exhaust groove 120 can be larger, which is beneficial for the gas converted from the flux of the welding part 150 after high temperature to be discharged through the notch of the exhaust groove 120. In addition, the opening size of the exhaust groove 120 near the bottom of the exhaust groove 120 is smaller, which is beneficial to reduce the adverse effects of the exhaust groove 120 on the mechanical strength of the guide body 110.

[0072] In some embodiments, the depth of the exhaust groove 120 is less than the thickness of the guide body 110. In this way, the exhaust groove 120 can be a blind groove. The exhaust groove 120 only penetrates a portion of the thickness of the guide body 110. The bottom wall of the exhaust groove 120 is formed by the guide body 110. During the welding process, the bottom wall of the exhaust groove 120 can prevent the molten metal from contacting the substrate (the first substrate 161 and / or the second substrate 162), so that the welding mixture will not gather during the welding process to cause problems such as welding suspension. It is also beneficial to prevent the molten metal from flowing to the side surface of the guide body 110, which is beneficial to improve the welding stability between the semiconductor grain 180 and the guide plate 101.

[0073] In some embodiments, the sidewall of the exhaust groove 120 is annular, so that the sidewall of the exhaust groove 120 is arranged around the entire periphery of the area where the exhaust groove 120 is located. During the welding process, the gas generated by the flux can be discharged through the notch of the exhaust groove 120.

[0074] In an embodiment where the groove side wall of the exhaust groove 120 is annular, the orthographic projection of the exhaust groove 120 on the plane where the first surface 111 of the guide plate 101 is located is a first orthographic projection, and the orthographic projection of the semiconductor grain 180 on the plane where the first surface 111 is located is a second orthographic projection. The first orthographic projection includes a first sub-projection and a second sub-projection that are connected. The first sub-projection is located within the second orthographic projection, and the second sub-projection does not overlap with the second orthographic projection. In this way, the exhaust groove 120 corresponding to the second sub-projection is exposed to the outside of the semiconductor grain 180, which can prevent the semiconductor grain 180 from completely blocking the notch of the exhaust groove 120 and making it difficult to discharge gas through the notch of the exhaust groove 120.

[0075] Exemplarily, the area of ​​the first sub-projection is larger than the area of ​​the second sub-projection, so that the size of the exhaust groove 120 exposed to the outside of the semiconductor grain 180 is smaller, which is beneficial to reducing the setting area of ​​the guide plate 101, so as to increase the arrangement density of the guide plate 101 and the electric couple pairs, and is beneficial to improving the cooling efficiency of the semiconductor refrigeration device 100.

[0076] In some other embodiments, see Figure 5 The side surface of the guide body 110 includes a second surface 112, the second surface 112 is connected to the first surface 111, and the second surface 112 intersects with the first surface 111, the second surface 112 is provided with an opening 140, the opening 140 is communicated with the exhaust groove 120, and the groove side wall of the exhaust groove 120 is provided at a part of the periphery of the area where the exhaust groove 120 is located, so that during the welding process, the gas generated by the flux can be discharged through the opening 140 and / or the notch of the exhaust groove 120, so that there are more ways to exhaust gas.

[0077] In the embodiment where the second surface 112 is provided with an opening 140, the orthographic projection of the exhaust groove 120 on the plane where the first surface 111 of the guide plate 101 is located is located within the orthographic projection of the semiconductor grain 180 on the plane where the first surface 111 is located, so that the semiconductor grain 180 completely covers the exhaust groove 120, which is conducive to further reducing the area of ​​the guide body 110, so as to increase the arrangement density of the guide plate 101 and the electric couple, and is conducive to improving the cooling efficiency of the semiconductor refrigeration device 100. At this time, during the welding process, the gas generated by the flux can be discharged through the opening 140.

[0078] In an embodiment in which an opening 140 is provided on the second surface 112, the orthographic projection of the exhaust groove 120 on the plane where the first surface 111 of the guide plate 101 is located is a first orthographic projection, and the orthographic projection of the semiconductor grain 180 on the plane where the first surface 111 is located is a second orthographic projection. The first orthographic projection includes a first sub-projection and a second sub-projection that are connected. The first sub-projection is located within the second orthographic projection, and the second sub-projection does not overlap with the second orthographic projection. In this way, the exhaust groove 120 corresponding to the second sub-projection is exposed to the outside of the semiconductor grain 180. During the welding process, the gas generated by the flux can be discharged through the opening 140 and the notch of the exhaust groove 120 at the same time, which is conducive to smoother exhaust and better prevention of welding holes.

[0079] Exemplarily, the dimension (e.g., width) of the exhaust groove 120 along the direction perpendicular to the extension direction of the flow guide body 110 can be adjusted according to actual conditions. The ratio of the dimension (e.g., width) of the exhaust groove 120 along the direction perpendicular to the extension direction of the flow guide body 110 to the dimension (e.g., width) of the flow guide body 110 along the direction perpendicular to the extension direction of the flow guide body 110 is in the range of 1 / 10-3 / 10. In this way, the dimension of the exhaust groove 120 along the direction perpendicular to the extension direction of the flow guide body 110 can be avoided to be too small, which is beneficial to improving the exhaust speed of the exhaust groove 120. In addition, the dimension of the exhaust groove 120 along the direction perpendicular to the extension direction of the flow guide body 110 can be avoided to be too large, which is beneficial to reducing the adverse effect of the exhaust groove 120 on the mechanical strength of the flow guide body 110. For example, the ratio can be 1 / 10, 2 / 10, 3 / 10 or any value between 1 / 10-3 / 10.

[0080] The following is a description of a method for preparing the semiconductor refrigeration device 100 provided in an embodiment of the present application.

[0081] The present application embodiment provides a method for preparing a semiconductor refrigeration device 100, which is used to prepare the semiconductor refrigeration device 100 in the above embodiment. Figure 6 The preparation method of the semiconductor refrigeration device 100 may include:

[0082] S100: placing a welding mixture on the first surface of the guide plate; the welding mixture includes welding material and flux, and the orthographic projection of the welding mixture on the plane where the first surface is located overlaps with the orthographic projection of the exhaust groove of the guide plate on the plane where the first surface is located.

[0083] A welding mixture is disposed on the first surface 111 of the guide plate 101. The welding mixture includes welding materials and soldering flux, and the orthographic projection of the welding mixture on the plane where the first surface 111 is located overlaps with the orthographic projection of the exhaust groove 120 of the guide plate 101 on the plane where the first surface 111 is located, so that in the subsequent welding process, the gas generated by the soldering flux can enter the exhaust groove 120 and then be discharged through the exhaust groove 120.

[0084] S200: placing semiconductor dies on a side of the solder mixture facing away from the guide plate.

[0085] After the solder mixture is disposed on the first surface 111 of the guide plate 101 , the method may include disposing the semiconductor die 180 on a side of the solder mixture facing away from the guide plate 101 .

[0086] S300: heating the semiconductor crystal grain, the welding mixture and the guide plate to form a welding piece with the welding mixture; the semiconductor crystal grain and the guide plate are connected by welding through the welding piece.

[0087] After the semiconductor crystal grain 180 is arranged on the side of the welding mixture away from the guide plate 101, the semiconductor crystal grain 180, the welding mixture and the guide plate 101 may be heated to melt the welding mixture to form a molten slurry, and the gas generated by the flux may enter the exhaust groove 120 and then be discharged through the exhaust groove 120, thereby facilitating the reduction of welding voids and improving the welding stability between the semiconductor crystal grain 180 and the guide plate 101. The welding mixture is formed into a welding piece 150 through a welding process, and the semiconductor crystal grain 180 and the guide plate 101 are welded and connected through the welding piece 150. In this way, the semiconductor crystal grain 180 and the guide plate 101 are connected through a traditional welding process, so that the manufacturing process is relatively simple.

[0088] In some embodiments, the semiconductor refrigeration device 100 may first fix the first substrate 161 and the guide plate 101 disposed on the first substrate 161 to be connected, and then fix the second substrate 162 and the guide plate 101 disposed on the second substrate 162, and then place the semiconductor grain 180 on the welding mixture of the guide plate 101 of one of the substrates, and then, heat the assembly formed by the first substrate 161, the second substrate 162, the guide plate 101, the welding mixture and the semiconductor grain 180 at a high temperature, and weld the first end of the semiconductor grain 180 to the first substrate 161 through the corresponding guide plate 101, and weld the second end of the semiconductor grain 180 to the second substrate 162 through the corresponding guide plate 101.

[0089] For example, the first substrate 161 and the corresponding guide plate 101 may be connected by a DPC or DBC process. The second substrate 162 and the corresponding guide plate 101 may be connected by a DPC or DBC process.

[0090] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0091] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A guide plate, characterized in that: For welding parts, the guide plate comprises: a guide body, the guide body having a first surface, and the first surface is used to set the welding part; Wherein, an exhaust groove is provided on the guide body, the notch of the exhaust groove is provided on the first surface, and the orthographic projection of the welding part on the plane where the first surface is located overlaps with the orthographic projection of the exhaust groove on the plane where the first surface is located.

2. The guide plate according to claim 1, characterized in that: The welding part includes a first sub-welding part and a second sub-welding part; There are multiple exhaust grooves, and the multiple exhaust grooves include a first exhaust groove and a second exhaust groove, and there is a distance between the first exhaust groove and the second exhaust groove; The orthographic projection of the first sub-welding member on the plane where the first surface is located overlaps with the orthographic projection of the first exhaust groove on the plane where the first surface is located; The orthographic projection of the second sub-welding member on the plane where the first surface is located overlaps with the orthographic projection of the second exhaust groove on the plane where the first surface is located.

3. The guide plate according to claim 2, characterized in that: There is a distance between the first sub-welding member and the second sub-welding member; And / or, along the extension direction of the guide body, the guide body includes a first sub-section, a second sub-section and a third sub-section that are arranged in sequence and connected, the first exhaust groove is arranged on the first sub-section, and the second exhaust groove is arranged on the third sub-section.

4. The guide plate according to any one of claims 1 to 3, characterized in that: The exhaust groove is a strip-shaped groove, and the exhaust groove extends along the extension direction of the flow guide body; Or, the exhaust groove comprises a first sub-exhaust groove and a second sub-exhaust groove, the first sub-exhaust groove extends along the extension direction of the guide body, the extension direction of the second sub-exhaust groove intersects with the extension direction of the guide body, and the first sub-exhaust groove and the second sub-exhaust groove intersect and communicate with each other; Alternatively, the exhaust groove includes a plurality of third sub-exhaust grooves arranged at intervals, and the plurality of third sub-exhaust grooves are arranged along an annular path.

5. The guide plate according to any one of claims 1 to 3, characterized in that: The depth of the exhaust groove gradually decreases from the center to the edge of the exhaust groove; And / or, the opening size of the exhaust groove gradually increases along the direction from the groove bottom to the groove mouth of the exhaust groove; And / or, the depth of the exhaust groove is smaller than the thickness of the flow guide body; And / or, the side wall of the exhaust groove is annular, or the side surface of the guide body includes a second surface, the second surface is connected to the first surface and intersects with the first surface, the second surface is provided with an opening, and the opening is connected to the exhaust groove; And / or, the ratio of the dimension of the exhaust groove along the direction perpendicular to the extension direction of the guide body to the dimension of the guide body along the direction perpendicular to the extension direction of the guide body is in the range of 1 / 10-3 / 10.

6. A semiconductor refrigeration device, characterized in that: It comprises a semiconductor crystal grain, a welding part and the guide plate according to any one of claims 1 to 5, wherein the semiconductor crystal grain and the guide plate are welded together by the welding part.

7. The semiconductor refrigeration device according to claim 6, characterized in that: The orthographic projection of the exhaust groove on the plane where the first surface of the guide plate is located is a first orthographic projection, and the orthographic projection of the semiconductor grain on the plane where the first surface is located is a second orthographic projection, the first orthographic projection includes a first sub-projection and a second sub-projection connected, the first sub-projection is located in the second orthographic projection, and the second sub-projection does not overlap with the second orthographic projection; An area of ​​the first sub-projection is greater than an area of ​​the second sub-projection.

8. The semiconductor refrigeration device according to claim 6, characterized in that: The side surface of the guide body includes a second surface, which is connected to the first surface and intersects with the first surface. The second surface is provided with an opening, which is connected to the exhaust groove. The orthographic projection of the exhaust groove on the plane where the first surface of the guide plate is located is located within the orthographic projection of the semiconductor grain on the plane where the first surface is located.

9. The semiconductor refrigeration device according to any one of claims 6 to 8, characterized in that: There are multiple semiconductor grains connected to the guide plate, and the multiple semiconductor grains include a first semiconductor grain and a second semiconductor grain. The welding part includes a first sub-welding part and a second sub-welding part. The first sub-welding part is connected between the first semiconductor grain and the guide plate, and the second sub-welding part is connected between the second semiconductor grain and the guide plate.

10. A method for preparing a semiconductor refrigeration device, characterized in that: Used to prepare the semiconductor refrigeration device according to any one of claims 6 to 9, the preparation method of the semiconductor refrigeration device comprising: Placing a welding mixture on the first surface of the guide plate; the welding mixture includes welding material and flux, and the orthographic projection of the welding mixture on the plane where the first surface is located overlaps with the orthographic projection of the exhaust groove of the guide plate on the plane where the first surface is located; Placing semiconductor grains on a side of the solder mixture facing away from the guide plate; The semiconductor crystal grain, the welding mixture and the guide plate are heated to form a welding piece with the welding mixture; the semiconductor crystal grain and the guide plate are connected by welding through the welding piece.

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