Bionic device with nerve blocking mechanism and preparation method thereof

Abstract

The invention relates to the technical field of bionic devices, and provides a bionic device with a nerve blocking mechanism and a preparation method of the bionic device. The bionic device comprises a substrate, a bottom electrode, a resistance change dielectric layer and a top electrode which are sequentially and upwards overlapped, the substrate is a silicon substrate; the bottom electrode and the top electrode are conductive metal or metal alloy; the resistance change dielectric layer is made of metal silicate or transition metal oxide; and the resistive random dielectric layer is used for blocking a conductive path between the bottom electrode and the top electrode by utilizing a double-ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when being subjected to continuous high-intensity electrical stimulation of the outside. The bionic device can present good blocking performance and realize an effective nerve blocking function when facing continuous high-intensity stimulation, so that when the bionic device is used as an artificial receptor, a TREK-2 mechanism in a living body can be simulated, an overexpressed neural signal is effectively inhibited, relatively strong self-protection is realized, and possible nerve injury is prevented.

Description

Technical Field

[0001] The present application relates to the technical field of bionic devices, and in particular to a bionic device with a nerve blocking mechanism and a preparation method thereof. Background Art

[0002] With the rapid development of society and technological progress, especially the rise of artificial intelligence, robotics and the Internet of Things, there is a growing demand for electronic devices that can simulate the sensory systems of biological organisms. In these technologies, artificial receptors play a key role, such as tactile receptors, temperature receptors and pain receptors. Tactile receptors can sense the physical properties of objects such as shape and texture, temperature receptors can monitor changes in ambient temperature in real time, and pain receptors can detect frequent or overloaded external stimuli. They not only provide intelligent systems with the ability to interact with the environment, but are also essential for protecting the machine itself and the human users around it from potential harm.

[0003] Memristors based on semiconductor structures are often used to mimic the behavior of human neurons. However, on the one hand, existing device structures often lack the function of realizing a complete neural conduction pathway. Especially when faced with continuous high-intensity stimulation, these devices often cannot effectively achieve the neural blocking function, which may cause excessive reaction or damage to the system. On the other hand, existing device materials have problems with high power consumption and insufficient sensitivity in processing complex conductivity mechanisms, and cannot present good blocking performance.

[0004] In summary, existing memristors lack the structure to realize the function of a complete neural conduction pathway, and have problems with high power consumption and insufficient sensitivity in terms of materials, which results in their inability to present good blocking performance and achieve effective neural blocking function when facing continuous high-intensity stimulation. Therefore, existing memristors still have defects when used as artificial receptors to simulate the self-protection mechanism of organisms. Summary of the invention

[0005] The embodiments of the present application provide a bionic device with a neural blocking mechanism and a preparation method thereof, so as to solve the problems that the existing memristor lacks the function of realizing a complete neural conduction path in structure, and has high power consumption and insufficient sensitivity in materials, resulting in the inability to present good blocking performance and realize effective neural blocking function when facing continuous high-intensity stimulation. Therefore, the existing memristor still has technical problems of defects when used as an artificial receptor to simulate the self-protection mechanism of an organism.

[0006] In a first aspect, an embodiment of the present application provides a bionic device with a nerve blocking mechanism, comprising: Substrate, bottom electrode, resistive dielectric layer and top electrode; The substrate, the bottom electrode, the resistive dielectric layer and the top electrode are sequentially stacked upward; The substrate is a silicon substrate; The bottom electrode is a conductive metal or a metal alloy; The resistive dielectric layer is metal silicate or transition metal oxide; The top electrode is a conductive metal or a metal alloy; The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the neural blocking mechanism of biological neurons.

[0007] In one embodiment, the metal silicate is lithium silicate; The transition metal oxide is one of molybdenum oxide, tungsten oxide and strontium titanate.

[0008] In one embodiment, the conductive metal forming the bottom electrode is one of gold, platinum, ruthenium, iridium and tungsten; The metal alloy forming the bottom electrode is one of titanium nitride and tantalum nitride.

[0009] In one embodiment, the conductive metal forming the top electrode is one of titanium, tantalum and hafnium; The metal alloy forming the top electrode is one of titanium nitride and tantalum nitride.

[0010] In one embodiment, the bottom electrode has a thickness of 8 nanometers to 160 nanometers; The thickness of the resistive dielectric layer is 1 nanometer to 25 nanometers; The thickness of the top electrode is 8 nanometers to 160 nanometers.

[0011] In a second aspect, the present application provides a method for preparing a bionic device having a nerve blocking mechanism, comprising: preparing a silicon substrate to obtain a substrate; Depositing a conductive metal or metal alloy with a first target thickness on the top of the substrate by one of electron beam evaporation and DC magnetron sputtering to obtain a bottom electrode; Depositing a metal silicate or a transition metal oxide with a second target thickness on top of the bottom electrode by one of chemical vapor deposition, physical vapor deposition and atomic layer deposition to obtain a resistive dielectric layer; Depositing a conductive metal or metal alloy with a third target thickness on the top of the resistive dielectric layer by one of low-power sputtering and atomic layer deposition to obtain a top electrode; The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the neural blocking mechanism of biological neurons.

[0012] In one embodiment, the metal silicate is lithium silicate; The transition metal oxide is one of molybdenum oxide, tungsten oxide and strontium titanate.

[0013] In one embodiment, the conductive metal forming the bottom electrode is one of gold, platinum, ruthenium, iridium and tungsten; The metal alloy forming the bottom electrode is one of titanium nitride and tantalum nitride.

[0014] In one embodiment, the conductive metal forming the top electrode is one of titanium, tantalum and hafnium; The metal alloy forming the top electrode is one of titanium nitride and tantalum nitride.

[0015] In one embodiment, the first target thickness is 8 nanometers to 160 nanometers; The second target thickness is 1 nanometer to 25 nanometers; The third target thickness is 8 nanometers to 160 nanometers.

[0016] The bionic device with a nerve blocking mechanism provided in the present application includes a substrate, a bottom electrode, a resistive dielectric layer and a top electrode. The substrate, the bottom electrode, the resistive dielectric layer and the top electrode are stacked upward in sequence. The substrate is a silicon substrate, the bottom electrode is a conductive metal or a metal alloy, the resistive dielectric layer is a metal silicate or a transition metal oxide, and the top electrode is a conductive metal or a metal alloy. The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when subjected to continuous high-intensity external electrical stimulation, so as to simulate the nerve blocking mechanism of neurons in biological bodies. On the one hand, the bionic device of the present application can utilize the dual ion synergistic effect of metal ions and oxygen ions in the resistive dielectric layer to form a conductive channel when subjected to external electrical stimulation, thereby structurally realizing the nerve conduction path between the bottom electrode and the top electrode; when subjected to continuous high-intensity external electrical stimulation, the dual ion synergistic effect of metal ions and oxygen ions in the resistive dielectric layer can be utilized to gradually close the conductive path between the bottom electrode and the top electrode, and the device conductance is significantly reduced, thereby showing a significant blocking effect on the nerve conduction path, and the longer the external electrical stimulation time and the greater the stimulation intensity, the higher the blocking degree will be; on the other hand, the device material is sensitive to external stimulation and has low power consumption, so that the bionic device exhibits high blocking efficiency, large blocking degree, and good cycle uniformity and stability. To sum up, the bionic device of the present application has the function of realizing a complete nerve conduction pathway in structure, and has low power consumption and high sensitivity in material, so that it can show good blocking performance and realize effective nerve blocking function when facing continuous high-intensity stimulation. Therefore, when used as an artificial receptor, it can simulate the TREK-2 mechanism in the body. When the organism is subjected to continuous high-intensity stimulation from the outside world, the nerve signals will be over-expressed. The blocking mechanism of the bionic device of the present application can effectively inhibit the over-expressed nerve signals, realize strong self-protection, and prevent possible nerve damage. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present application or the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 is a schematic structural diagram of a bionic device with a nerve blocking mechanism provided in an embodiment of the present application; Figure 2 is a schematic diagram of ion distribution of a bionic device with a nerve blocking mechanism provided in an embodiment of the present application in a resting state; Figure 3It is a schematic diagram of ion distribution in the resistance change process of the bionic device with a nerve blocking mechanism provided in an embodiment of the present application; Figure 4 is a schematic diagram of ion distribution during the blocking process of the bionic device with a nerve blocking mechanism provided in an embodiment of the present application; Figure 5 is a schematic diagram of the blocking characteristics of the bionic device with a nerve blocking mechanism provided in an embodiment of the present application during a test; Figure 6 It is a schematic flow chart of a method for preparing a bionic device with a nerve blocking mechanism provided in an embodiment of the present application.

[0019] Reference numerals: 1-substrate; 2-bottom electrode; 3-resistive dielectric layer; 4-top electrode. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0021] It should be noted that in the description of the embodiments of the present application, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements. The orientation or position relationship indicated by the terms "upper", "lower" and the like is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. Unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or it can be a connection between the two elements. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0022] The terms "first", "second", etc. in this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0023] Reference Figure 1 , the embodiment of the present application provides a bionic device with a nerve blocking mechanism, which may include: a substrate 1, a bottom electrode 2, a resistive dielectric layer 3 and a top electrode 4; The substrate 1, the bottom electrode 2, the resistive dielectric layer 3 and the top electrode 4 are sequentially stacked upwards; The substrate 1 is a silicon substrate; The bottom electrode 2 is a conductive metal or metal alloy; The resistive dielectric layer 3 is metal silicate or transition metal oxide; The top electrode 4 is a conductive metal or metal alloy; The resistive dielectric layer 3 is used to block the conductive path between the bottom electrode 2 and the top electrode 4 by utilizing the dual ion synergistic effect of metal ions and oxygen ions in metal silicates or transition metal oxides when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the neural blocking mechanism of biological neurons.

[0024] Reference Figure 2 When the bionic device is in the resting state, that is, the initial state, there is a certain concentration gradient between the metal cations and oxygen ions in the resistive dielectric layer.

[0025] Reference Figure 3 When the bionic device is stimulated by a pulse, the metal cations and oxygen ions will move to the electrodes on both sides respectively. The metal cations migrate to the neighborhood of the top electrode, and the oxygen ions migrate to the neighborhood of the bottom electrode, thereby forming oxygen vacancies in the resistive dielectric layer. These oxygen vacancies are continuously distributed between the top electrode and the bottom electrode to form a conductive channel, thereby completing the setting process; then, a reverse pulse reset scanning voltage is applied to the bionic device, and the oxygen ions are released from the bottom electrode and migrate to the neighborhood of the top electrode, and the metal cations are released from the top electrode and migrate to the neighborhood of the bottom electrode. As the reset scanning voltage increases, the aggregation area of ​​the metal cations in the neighborhood of the bottom electrode also expands, squeezing out the area originally belonging to the oxygen vacancies, resulting in the inability of the oxygen vacancies to be continuously distributed between the top electrode and the bottom electrode. At the same time, the movement of oxygen ions will fill some of the oxygen vacancies, resulting in a decrease in the number of oxygen vacancies, and the conductive channel formed by the oxygen vacancies will be broken, thereby completing the reset process. The above setting process to the reset process is the resistive switching process of the bionic device.

[0026] Reference Figure 4 , the bionic device changes from a high resistance state to a low resistance state, and its conductance gradually increases in the process, thus completing the Figure 3 The same setting process; then, a continuous high-intensity unidirectional pulse is applied to the bionic device, and the metal cations in the resistive dielectric layer continue to escape and migrate to the top electrode, thereby forming a cation-deficient region in the resistive dielectric layer. Joule heat accumulates rapidly in this region and the thermal motion of oxygen ions gradually increases, causing the conductive channel formed by oxygen vacancies to break into filaments. These filaments gradually accumulate and eventually cause the conductive channel in the local area where they are located to be destroyed. At this time, the bionic device gradually presents a high-resistance state, the conductivity gradually decreases, the current also gradually decreases, and finally forms a blockage, thereby completing the blocking process.

[0027] It should be noted that the destruction of the conductive channel does not completely cut off the current, but forms a partially broken state, so that the response current of the bionic device gradually decreases under subsequent continuous pulse stimulation, rather than remaining saturated.

[0028] Furthermore, if high-intensity unidirectional pulses continue to be applied in the blocking state, the conductive channel will be more severely damaged, thereby aggravating the degree of blocking. Compared with the resistive switching process, a higher pulse voltage will be required to re-establish the conductive channel between the top electrode and the bottom electrode.

[0029] Reference Figure 5 In the process of the bionic device from setting to blocking, its conductance gradually increases with the continuous application of high-intensity pulse voltage, and gradually decreases as the conductive channel is destroyed, thus forming a maximum conductance in this process, which corresponds to the critical voltage value of the pulse.

[0030] The bionic device with a nerve blocking mechanism provided in this embodiment includes a substrate, a bottom electrode, a resistive dielectric layer and a top electrode. The substrate, the bottom electrode, the resistive dielectric layer and the top electrode are stacked upward in sequence. The substrate is a silicon substrate, the bottom electrode is a conductive metal or a metal alloy, the resistive dielectric layer is a metal silicate or a transition metal oxide, and the top electrode is a conductive metal or a metal alloy. The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when subjected to continuous high-intensity external electrical stimulation, so as to simulate the nerve blocking mechanism of biological neurons. On the one hand, the bionic device of this embodiment can utilize the dual ion synergistic effect of metal ions and oxygen ions in the resistive dielectric layer to form a conductive channel when subjected to external electrical stimulation, thereby structurally realizing a nerve conduction path between the bottom electrode and the top electrode; when subjected to continuous high-intensity external electrical stimulation, the dual ion synergistic effect of metal ions and oxygen ions in the resistive dielectric layer can be utilized to gradually close the conductive path between the bottom electrode and the top electrode, and the device conductance is significantly reduced, thereby showing a significant blocking effect on the nerve conduction path, and the longer the external electrical stimulation time and the greater the stimulation intensity, the higher the blocking degree will be; on the other hand, the device material is sensitive to external stimulation and has low power consumption, so that the bionic device exhibits a blocking performance with high blocking efficiency, large blocking degree, good cycle uniformity and stability. To sum up, the bionic device of this embodiment has the function of realizing a complete nerve conduction pathway in structure, and has low power consumption and high sensitivity in material, so that it can show good blocking performance and realize effective nerve blocking function when facing continuous high-intensity stimulation. Therefore, when used as an artificial receptor, it can simulate the TREK-2 mechanism in the body. When the body is subjected to continuous high-intensity stimulation from the outside world, the nerve signals will be over-expressed. The blocking mechanism of the bionic device of this embodiment can effectively suppress the over-expressed nerve signals, realize strong self-protection, and prevent possible nerve damage.

[0031] It should be noted that TREK-2 is a member of the two-pore potassium channel (Two-Pore Domain Potassium Channels, K2P) family. It is a mechanosensitive ion channel of eukaryotic organisms, widely expressed in the central and peripheral nervous systems. The TREK-2 mechanism involves responses to multiple stimuli and complex gating behaviors. These responses and behaviors are regulated by structural changes in the channel and are closely related to multiple perceptions including touch, hearing and pain.

[0032] In one embodiment, the metal silicate is lithium silicate, and the transition metal oxide is one of molybdenum oxide, tungsten oxide and strontium titanate; The conductive metal forming the bottom electrode is one of gold, platinum, ruthenium, iridium and tungsten, and the metal alloy forming the bottom electrode is one of titanium nitride and tantalum nitride; The conductive metal forming the top electrode is one of titanium, tantalum and hafnium, and the metal alloy forming the top electrode is one of titanium nitride and tantalum nitride.

[0033] The thickness of the bottom electrode is 8 nanometers to 160 nanometers. In this embodiment, it can be selected from 10 nanometers to 150 nanometers. The thickness of the resistive dielectric layer is 1 nanometer to 25 nanometers. In this embodiment, it can be selected from 2 nanometers to 20 nanometers. The thickness of the top electrode is 8 nanometers to 160 nanometers. In this embodiment, it can be selected from 10 nanometers to 150 nanometers.

[0034] In this embodiment, materials such as lithium silicate, molybdenum oxide, tungsten oxide and strontium titanate are more likely to produce a dual-ion synergistic effect of metal cations and cations when subjected to external electrical stimulation, thereby facilitating the formation of a conductive channel between the bottom electrode and the top electrode, and realizing resistive switching and blocking functions based on the conductive channel. At the same time, the materials of the bottom electrode and the top electrode are limited, and the material thickness of the bottom electrode, the resistive switching dielectric layer and the top electrode are preferably selected, which can further optimize the conductive, resistive and blocking functions, improve the sensitivity of the bionic device and reduce power consumption.

[0035] Reference Figure 6 The present application embodiment provides a method for preparing a bionic device with a nerve blocking mechanism, which may include: 601. Prepare a silicon substrate to obtain a substrate; 602. Depositing a conductive metal or metal alloy with a first target thickness on the top of the substrate by one of electron beam evaporation and DC magnetron sputtering to obtain a bottom electrode; 603. Depositing a metal silicate or transition metal oxide with a second target thickness on top of the bottom electrode by one of chemical vapor deposition, physical vapor deposition and atomic layer deposition to obtain a resistive dielectric layer; 604. Deposit a conductive metal or metal alloy with a third target thickness on the top of the resistive dielectric layer by using one of low-power sputtering and atomic layer deposition to obtain a top electrode.

[0036] The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in metal silicates or transition metal oxides when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the neural blocking mechanism of biological neurons.

[0037] In step 602, the conductive metal forming the bottom electrode is one of gold, platinum, ruthenium, iridium and tungsten, and the metal alloy is one of titanium nitride and tantalum nitride; the first target thickness is 8 nanometers to 160 nanometers, and in this embodiment, 10 nanometers to 150 nanometers can be selected.

[0038] In step 603, the metal silicate is lithium silicate, and the transition metal oxide is one of molybdenum oxide, tungsten oxide and strontium titanate; the second target thickness is 1 nanometer to 25 nanometers, and in this embodiment, 2 nanometers to 20 nanometers can be selected.

[0039] In addition, when depositing metal silicates or transition metal oxides, the target material composition ratio needs to be determined according to the specific metal type.

[0040] In step 604, the conductive metal forming the top electrode is one of titanium, tantalum and hafnium, and the metal alloy is one of titanium nitride and tantalum nitride; the third target thickness is 8 nanometers to 160 nanometers, and in this embodiment, 10 nanometers to 150 nanometers can be selected.

[0041] The method for preparing a bionic device with a nerve blocking mechanism provided in this embodiment comprises the following steps: preparing a silicon substrate to obtain a substrate, depositing a conductive metal or metal alloy of a first target thickness on the top of the substrate by one of electron beam evaporation and DC magnetron sputtering to obtain a bottom electrode, depositing a metal silicate or transition metal oxide of a second target thickness on the top of the bottom electrode by one of chemical vapor deposition, physical vapor deposition and atomic layer deposition to obtain a resistive dielectric layer, and depositing a conductive metal or metal alloy of a third target thickness on the top of the resistive dielectric layer by one of low-power sputtering and atomic layer deposition to obtain a top electrode. The resistive dielectric layer is used to utilize the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or transition metal oxide to block the conductive path between the bottom electrode and the top electrode when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the nerve blocking mechanism of neurons in a living body. On the one hand, the bionic device prepared in this embodiment can utilize the dual ion synergistic effect of metal ions and oxygen ions in the resistive dielectric layer to form a conductive channel when subjected to external electrical stimulation, thereby structurally realizing the nerve conduction path between the bottom electrode and the top electrode; when subjected to continuous high-intensity external electrical stimulation, the dual ion synergistic effect of metal ions and oxygen ions in the resistive dielectric layer can be utilized to gradually close the conductive path between the bottom electrode and the top electrode, and the device conductance is significantly reduced, thereby showing a significant blocking effect on the nerve conduction path, and the longer the external electrical stimulation time and the greater the stimulation intensity, the higher the blocking degree will be; on the other hand, the device material is sensitive to external stimulation and has low power consumption, so that the bionic device exhibits high blocking efficiency, large blocking degree, and good cycle uniformity and stability. To sum up, the bionic device prepared in this embodiment has the function of realizing a complete nerve conduction pathway in structure, and has low power consumption and high sensitivity in material, so that it can show good blocking performance and realize effective nerve blocking function when facing continuous high-intensity stimulation. Therefore, when used as an artificial receptor, it can simulate the TREK-2 mechanism in the body. When the organism is subjected to continuous high-intensity stimulation from the outside world, the nerve signals will be over-expressed. The blocking mechanism of the bionic device prepared in this embodiment can effectively inhibit the over-expressed nerve signals, realize strong self-protection, and prevent possible nerve damage.

[0042] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A bionic device with a nerve blocking mechanism, characterized in that: include: Substrate, bottom electrode, resistive dielectric layer and top electrode; The substrate, the bottom electrode, the resistive dielectric layer and the top electrode are sequentially stacked upward; The substrate is a silicon substrate; The bottom electrode is a conductive metal or a metal alloy; The resistive dielectric layer is metal silicate or transition metal oxide; The top electrode is a conductive metal or a metal alloy; The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the neural blocking mechanism of biological neurons.

2. The bionic device with a nerve blocking mechanism according to claim 1, characterized in that: The metal silicate is lithium silicate; The transition metal oxide is one of molybdenum oxide, tungsten oxide and strontium titanate.

3. The bionic device with a nerve blocking mechanism according to claim 1, characterized in that: The conductive metal forming the bottom electrode is one of gold, platinum, ruthenium, iridium and tungsten; The metal alloy forming the bottom electrode is one of titanium nitride and tantalum nitride.

4. The bionic device with a nerve blocking mechanism according to claim 1, characterized in that: The conductive metal forming the top electrode is one of titanium, tantalum and hafnium; The metal alloy forming the top electrode is one of titanium nitride and tantalum nitride.

5. The bionic device with a nerve blocking mechanism according to claim 1, characterized in that: The thickness of the bottom electrode is 8 nanometers to 160 nanometers; The thickness of the resistive dielectric layer is 1 nanometer to 25 nanometers; The thickness of the top electrode is 8 nanometers to 160 nanometers.

6. A method for preparing a bionic device with a nerve blocking mechanism, characterized in that: include: preparing a silicon substrate to obtain a substrate; Depositing a conductive metal or metal alloy with a first target thickness on the top of the substrate by one of electron beam evaporation and DC magnetron sputtering to obtain a bottom electrode; Depositing a metal silicate or a transition metal oxide with a second target thickness on top of the bottom electrode by one of chemical vapor deposition, physical vapor deposition and atomic layer deposition to obtain a resistive dielectric layer; Depositing a conductive metal or metal alloy with a third target thickness on the top of the resistive dielectric layer by one of low-power sputtering and atomic layer deposition to obtain a top electrode; The resistive dielectric layer is used to block the conductive path between the bottom electrode and the top electrode by utilizing the dual ion synergistic effect of metal ions and oxygen ions in the metal silicate or the transition metal oxide when subjected to continuous high-intensity electrical stimulation from the outside, so as to simulate the neural blocking mechanism of biological neurons.

7. The method for preparing a bionic device with a nerve blocking mechanism according to claim 6, characterized in that: The metal silicate is lithium silicate; The transition metal oxide is one of molybdenum oxide, tungsten oxide and strontium titanate.

8. The method for preparing a bionic device with a nerve blocking mechanism according to claim 6, characterized in that: The conductive metal forming the bottom electrode is one of gold, platinum, ruthenium, iridium and tungsten; The metal alloy forming the bottom electrode is one of titanium nitride and tantalum nitride.

9. The method for preparing a bionic device with a nerve blocking mechanism according to claim 6, characterized in that: The conductive metal forming the top electrode is one of titanium, tantalum and hafnium; The metal alloy forming the top electrode is one of titanium nitride and tantalum nitride.

10. The method for preparing a bionic device with a nerve blocking mechanism according to claim 6, characterized in that: The first target thickness is 8 nanometers to 160 nanometers; The second target thickness is 1 nanometer to 25 nanometers; The third target thickness is 8 nanometers to 160 nanometers.

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