Resistor and method for manufacturing a resistor

Abstract

The present disclosure addresses the problem of making it easy to adjust the resistance value of a resistor. A resistor (1) according to the present disclosure includes an insulating substrate (11), a resistor body (12), an electrode (13), and an oxynitride film (14). The resistor (12) contains Cr, Si, and N, and is provided on the insulating substrate (11). The electrode (13) contains Cu and / or Ag, and is provided on the resistor (12). An oxynitride film (14) is provided on the resistor (12). The electrode (13) and the oxynitride film (14) are arranged side by side in a second direction (D2) perpendicular to a first direction (D1), which is the thickness direction of the insulating substrate (11). The oxynitride film (14) is in contact with an end of the electrode (13) in the second direction (D2).

Description

Technical Field

[0001] The present disclosure generally relates to a resistor and a method for manufacturing the resistor. More specifically, the present disclosure relates to a resistor including an insulating substrate and a resistor body disposed on the insulating substrate, and a method for manufacturing the resistor. Background Art

[0002] Patent document 1 discloses a chip resistor (resistor), which includes an insulating substrate, a resistor body and a pair of upper surface electrodes (electrodes). The resistor body is arranged on the insulating substrate. The pair of upper surface electrodes are arranged to partially cover the upper surface of the resistor body at both longitudinal ends of the resistor body.

[0003] In the chip resistor of Patent Document 1, a resistor body is first formed on an insulating substrate, a pair of upper surface electrodes are formed on the resistor body, and then heat treatment is performed. Therefore, in some cases, an oxide film may be formed on at least one of the pair of upper surface electrodes. As a result, it is sometimes difficult to adjust the resistance value of the resistor body (i.e., perform trimming) by bringing a probe into contact with each of the pair of upper surface electrodes.

[0004] Reference List

[0005] Patent Literature

[0006] Patent Document 1: JP 2020-170843 A Summary of the invention

[0007] An object of the present disclosure is to provide a resistor that allows adjustment of the resistance value of its resistor body, and to provide a method for manufacturing the resistor.

[0008] A resistor according to one aspect of the present disclosure includes an insulating substrate, a resistor body, an electrode, and an oxynitride film. The resistor body contains Cr, Si, and N, and is disposed on the insulating substrate. The electrode contains at least one of Cu or Ag, and is disposed on the resistor body. The oxynitride film is disposed on the resistor body. The electrode and the oxynitride film are arranged side by side in a second direction perpendicular to the first direction. The first direction defines a thickness direction with respect to the insulating substrate. The oxynitride film is a first oxynitride film, a second oxynitride film, or a third oxynitride film. The first oxynitride film is arranged to contact the end of the electrode in the second direction. The second oxynitride film is arranged to leave a gap between the electrode and the second oxynitride film itself in the second direction. The third oxynitride film is arranged to overlap a portion of the electrode in the first direction.

[0009] A method for manufacturing a resistor according to another aspect of the present disclosure includes a substrate providing step, a resistor body forming step, an oxynitride film forming step, an oxynitride film removing step, and an electrode forming step. The substrate providing step includes providing an insulating substrate. The resistor body forming step includes forming a resistor body on the insulating substrate. The oxynitride film forming step includes forming an oxynitride film on the resistor body by heat treating the resistor body formed in the resistor body forming step. The oxynitride film removing step includes removing at least a portion of the oxynitride film formed in the oxynitride film forming step by etching. The electrode forming step includes forming an electrode on the portion of the resistor body from which the oxynitride film has been removed in the oxynitride film removing step. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a cross-sectional view of a resistor according to a first embodiment;

[0011] Figure 2 A to Figure 2 F is a cross-sectional view showing various steps of the manufacturing process of the resistor;

[0012] Figure 3 A to Figure 3 C is a cross-sectional view showing an oxynitride film removal step belonging to the manufacturing process of the resistor;

[0013] Figure 4 is a graph showing the relationship between the analysis depth in the resistor body and the corresponding quantitative value for the resistor;

[0014] Figure 5 is a cross-sectional view of a resistor according to a second embodiment;

[0015] Figure 6 is a cross-sectional view of a resistor according to a third embodiment;

[0016] Figure 7 A to Figure 7 F is a cross-sectional view showing respective steps of a manufacturing process of a resistor according to a fourth embodiment;

[0017] Figure 8 is a cross-sectional view of a resistor according to a fifth embodiment; and

[0018] Fig. 9 A to Fig. 9 C is a cross-sectional view showing an oxynitride film removing step belonging to the manufacturing process of the resistor according to the second variation of the first to fifth embodiments. DETAILED DESCRIPTION

[0019] The resistor according to the first embodiment to the fifth embodiment and the corresponding method for manufacturing the resistor will now be described with reference to the accompanying drawings. The accompanying drawings referred to in the following description of the first embodiment to the fifth embodiment are all schematic diagrams. Therefore, the ratio of the size (including thickness) of the various constituent elements shown in the accompanying drawings does not always reflect their actual size ratio. Note that the first embodiment to the fifth embodiment described below are only exemplary embodiments of the various embodiments of the present disclosure and should not be interpreted as restrictive. Instead, without departing from the scope of the present disclosure, the first embodiment to the fifth embodiment can be easily changed in various ways according to design selection or any other factors.

[0020] (First embodiment)

[0021] (1) Overview of resistors

[0022] First, refer to Figure 1 An outline of the resistor 1 according to the first embodiment is described.

[0023] The resistor 1 according to the first embodiment is a chip resistor to be surface mounted (SMT). Specifically, the resistor 1 is designed to be mounted on a surface (mounting surface) of a printed substrate using a surface mounter (mounting machine), for example. The resistor 1 can be, for example, a thin film chip resistor.

[0024] like Figure 1 As shown, the resistor 1 according to the first embodiment includes an insulating substrate 11, a resistor body 12, a pair of electrodes 13 and an oxynitride film 14. The resistor body 12 contains chromium (Cr), silicon (Si) and nitrogen (N), and is disposed on the insulating substrate 11. Each of the pair of electrodes 13 contains at least one of copper (Cu) or silver (Ag), and is disposed on the resistor body 12. The oxynitride film 14 is disposed on the resistor body 12. The pair of electrodes 13 and the oxynitride film 14 are arranged side by side in the second direction D2. The second direction D2 is perpendicular to the first direction D1 defining the thickness direction with respect to the insulating substrate 11. The oxynitride film 14 may be, for example, a first oxynitride film 14. The first oxynitride film 14 is arranged to contact the end (end face 131) of the electrode 13 in the second direction D2.

[0025] In the resistor 1 according to the first embodiment, the oxynitride film 14 is not formed on any electrode 13, thereby reducing the possibility of causing instability in the resistance value of the resistor 12 measured with the probe in contact with the electrode 13. Therefore, this makes it easier to adjust the resistance value of the resistor 12.

[0026] (2) Structure of resistor

[0027] Next, we will refer to Figure 1 The configuration of the resistor 1 according to the first embodiment is described.

[0028] like Figure 1 As shown, the resistor 1 according to the first embodiment includes an insulating substrate 11, a resistor body 12, a pair of electrodes 13, and an oxynitride film 14. The resistor 1 further includes a protective coating 15.

[0029] (2.1) Insulating substrate

[0030] The insulating substrate 11 may be, for example, a ceramic substrate. The material of the ceramic substrate may be, for example, an alumina sintered body, wherein the content of alumina is equal to or higher than 96%. When viewed in a plane in the first direction D1, the insulating substrate 11 is formed into a rectangular shape. Figure 1 As shown, the insulating substrate 11 has a first main surface (upper surface) 111 , a second main surface (lower surface) 112 , and an outer peripheral surface 113 .

[0031] The first main surface 111 and the second main surface 112 face each other in the first direction D1. Each of the first main surface 111 and the second main surface 112 is a plane aligned with a second direction D2 perpendicular to the first direction D1. The peripheral surface 113 includes four side surfaces, each of which is aligned with the first direction D1. The first direction D1 is a direction parallel to the thickness direction defined about the insulating substrate 11 (i.e., Figure 1 The second direction D2 is a direction parallel to the longitudinal axis or width axis (dimensional axis) of the insulating base 11. That is, the second direction D2 is Figure 1 In the first embodiment, as an example, the second direction D2 is considered to be a direction parallel to the longitudinal axis of the insulating base 11.

[0032] (2.2) Resistor

[0033] The resistor 12 may be, for example, a thin film, which is provided on the first main surface 111 of the insulating substrate 11. That is, the resistor 12 is provided on the insulating substrate 11. Figure 1 In the example shown, the resistor 12 is arranged to completely cover the first main surface 111 of the insulating substrate 11. When viewed in a plane in the first direction D1, the resistor 12 can have, for example, a rectangular shape. However, this is only an example and should not be interpreted as limiting. Alternatively, the resistor 12 can also have any other arbitrary shape according to its own resistance value.

[0034] The resistor 12 can be made of, for example, an alloy containing Cr, Si and N. That is, the resistor 12 contains Cr, Si and N. At least in the middle of the resistor 12 in the first direction D1, the atomic ratio of Si to Cr in the resistor 12 is equal to or greater than 2 / 3 and equal to or less than 4. In other words, the atomic ratio of Cr to Si in the resistor 12 is equal to or greater than three to two and equal to or less than one to four. In addition, the total atomic percentage of N relative to the total atomic percentage of the constituent metals of the resistor 12 is equal to or less than 50 atomic%. That is, at least in the middle of the resistor 12 in the first direction D1 (i.e., in the thickness direction defined with respect to the resistor 12), the atomic percentage of N in the resistor 12 is equal to or less than 50 atomic%.

[0035] In the resistor 1 according to the first embodiment, the resistor 12 further contains oxygen (O). The atomic percentage of O in the resistor 12 is equal to or less than 10 atomic % at least in the middle of the resistor 12 in the first direction D1.

[0036] The resistor body 12 is formed into a substantially rectangular shape, for example, by depositing a thin film conductor on almost the entire surface of the insulating substrate 11 by a thin film deposition method such as sputtering and then removing an unnecessary portion of the thin film conductor by photolithography.

[0037] The atomic composition ratio of the resistor 12 is calculated based on the spectral ratio, which is the spectral ratio of Cr, Si, N and O obtained on an atom-by-atom basis for the upper surface or cross section of the resistor 12 by, for example, transmission electron microscope energy dispersive X-ray spectroscopy (TEM-EDX) or transmission electron microscope electron energy loss spectroscopy (TEX-EELS). In addition, the atomic composition ratio of the resistor 12 is also calculated by correcting each atomic composition ratio evaluated by X-ray photoelectron spectroscopy (XPS) based on the correction coefficient of each element evaluated by Rutherford backscattering spectrometry (RBS).

[0038] In this case, the specific resistance of the resistor 12 can be adjusted by changing the atomic ratio of Si to Cr in the resistor 12. The specific resistance of the resistor 12 is preferably equal to or higher than 500 μΩ·cm and equal to or lower than 30,000 μΩ·cm.

[0039] (2.3) Electrode

[0040] A pair of electrodes 13 are arranged on the resistor 12. More specifically, a pair of electrodes 13 are arranged to cover the corresponding parts of the upper surface of the resistor 12 at the two longitudinal ends of the resistor 12 (i.e., the two ends of the resistor 12 in the second direction D2). Each electrode in a pair of electrodes 13 contains at least one of Cu or Ag. In the first embodiment, each electrode in a pair of electrodes 13 contains Cu. Specifically, each electrode in a pair of electrodes 13 is made of CuNi (copper-nickel) alloy. In each electrode in the electrode 13, the atomic percentage of Cu can be, for example, 60 atomic%. In each electrode in the electrode 13, the atomic percentage of Ni can be, for example, 40 atomic%. A pair of electrodes 13 are formed on the corresponding parts of the oxynitride film 14 removed in the resistor 12 by, for example, screen printing using a paste material. When viewed in a plane on the first direction D1, each electrode in a pair of electrodes 13 can have, for example, a rectangular shape.

[0041] Each of the pair of electrodes 13 has a pair of end faces 131, 132 and a main surface 133. The pair of end faces 131, 132 face each other in the second direction D2. Each of the pair of end faces 131, 132 is a plane aligned with the first direction D1. The main surface 133 is a surface of the electrode 13 away from the resistor 12. The main surface 133 is a surface aligned with the second direction D2. When measuring the resistance value of the resistor 12, the probe is brought into contact with the main surface 133 of each of the pair of electrodes 13.

[0042] (2.4) Oxynitride film

[0043] like Figure 1 As shown, the oxynitride film 14 is provided on the resistor 12. More specifically, the oxynitride film 14 is provided on the central portion of the upper surface of the resistor 12. That is, the oxynitride film 14 is not provided on any end of the upper surface of the resistor 12 in the second direction D2. A pair of electrodes 13 are provided on the upper surface of the resistor 12, located on both sides of the oxynitride film 14 in the second direction D2. That is, the pair of electrodes 13 and the oxynitride film 14 are provided side by side in the second direction D2.

[0044] like Figure 1 As shown, the oxynitride film 14 has a pair of end faces 141. The pair of end faces 141 are two end faces of the oxynitride film 14 in the second direction D2. Each of the pair of end faces 141 is a plane aligned with the first direction D1. One end face 141 ( Figure 1 ) and one electrode 13 ( Figure 1 The other end face 141 ( Figure 1The right side of the pair of electrodes 13) and the other electrode 13 ( Figure 1 In the resistor 1 according to the first embodiment, the end face 131 of the electrode 13 is in contact with the end face 131 of the pair of electrodes 13 in the second direction D2. That is, the oxynitride film 14 is in contact with the end face 131 of the pair of electrodes 13 in the second direction D2. In the resistor 1 according to the first embodiment, the oxynitride film 14 is a first oxynitride film (hereinafter referred to as "first oxynitride film 14"). In the resistor 1 according to the first embodiment, the end face 131 of the electrode 13 is an end of the electrode 13.

[0045] (2.5) Protective coating

[0046] The protective coating (inorganic protective coating) 15 is a coating film provided to protect the resistor 12. The protective coating 15 is formed to cover at least one of the resistor 12 and the oxynitride film 14. Figure 1 In the example shown, the protective coating 15 covers the oxynitride film 14 provided on the resistor 12. Figure 1 In the example shown, the protective coating 15 also partially covers the pair of electrodes 13 provided on both sides of the oxynitride film 14. That is, when viewed in a plan view in the first direction D1, the protective coating 15 covers the boundary between the oxynitride film 14 and the pair of electrodes 13, and is continuously provided to cover not only the oxynitride film 14 but also corresponding portions of the pair of electrodes 13.

[0047] The protective coating 15 may be made of, for example, Al2O3 (aluminum oxide). The protective coating 15 is formed on the entire upper surface of the oxynitride film 14 and on the corresponding portions of the main surfaces 133 of the pair of electrodes 13 by applying, for example, an alumina paste.

[0048] (3) Method for manufacturing resistor

[0049] Next, we will refer to Figure 2 A to Figure 3 C describes a method for manufacturing the resistor 1 according to the first embodiment.

[0050] The method for manufacturing the resistor 1 according to the first embodiment is a method for manufacturing the above-mentioned resistor 1. The method for manufacturing the resistor 1 includes a substrate providing step, a resistor body forming step, an oxynitride film forming step, an oxynitride film removing step, and an electrode forming step. The method for manufacturing the resistor 1 also includes a protective coating forming step. In the method for manufacturing the resistor 1 according to the first embodiment, the substrate providing step, the resistor body forming step, the oxynitride film forming step, the oxynitride film removing step, the electrode forming step, and the protective coating forming step are performed in sequence.

[0051] (3.1) Manufacturing process

[0052] First, refer to Figure 2 A to Figure 2 F describes a manufacturing process of resistor 1.

[0053] The substrate providing step is a step of providing the insulating substrate 11. More specifically, for example, Figure 2 As shown in FIG. 1A , the substrate providing step includes arranging the insulating substrate 11 so that the first major surface 111 thereof faces upward and the second major surface 112 faces downward.

[0054] The resistor forming step is a step of forming the resistor 12 on the insulating substrate 11. More specifically, the resistor forming step includes forming the resistor 12 on the first main surface 111 of the insulating substrate 11 by reactive sputtering that reacts nitrogen or reactive sputtering that reacts nitrogen and oxygen with each other. Figure 2 In the example shown in B, the resistor 12 is formed on the entire first main surface 111 of the insulating substrate 11. The sputtering target of reactive sputtering may contain, for example, Cr, Si, and O. In the sputtering target, the atomic ratio of Si to Cr is three to seven, and the atomic percentage of O is 20 atomic %.

[0055] In addition, the resistor body forming step includes forming a pattern of the resistor body 12 on the insulating substrate 11. More specifically, the pattern of the resistor body 12 is formed by partially removing the resistor body 12 by, for example, photolithography.

[0056] The oxynitride film forming step is a step of forming the oxynitride film 16 on the resistor 12 by heat-treating the resistor 12 formed in the resistor forming step. More specifically, Figure 2 As shown in FIG. 1C, the heat treatment is performed by placing the insulating substrate 11 on which the resistor 12 has been formed into the heat treatment furnace 100. As a result, Figure 2 As shown in FIG. 3C, an oxynitride film 16 is formed on the resistor 12. The heat treatment temperature may be, for example, equal to or higher than 400° C. and equal to or lower than 800° C. In the first embodiment, for example, the heat treatment temperature is 520° C. In the first embodiment, the heat treatment temperature is the substantive temperature of the resistor 12. However, the heat treatment temperature is not necessarily the substantive temperature of the resistor 12, but may be, for example, the temperature of the atmosphere.

[0057] The oxynitride film removing step is a step of removing at least a portion of the oxynitride film 16 formed in the oxynitride film forming step by etching. More specifically, Figure 2 As shown in D, the oxynitride film removal step includes forming the oxynitride film 14 by removing both end portions in the second direction D2 of the oxynitride film 16 formed on the resistor 12. Note that the etching process will be described later in the section "(3.2) Etching".

[0058] The electrode forming step is a step of forming the electrode 13 on those portions of the resistor 12 from which the oxynitride film 16 has been removed in the oxynitride film removing step. More specifically, Figure 2 As shown in FIG. 1 , the electrode forming step includes forming a pair of electrodes 13 on both sides of the oxynitride film 14 in the second direction D2 by screen printing using a paste material. Figure 2 As shown in E, the thickness of each of the pair of electrodes 13 measured in the first direction D1 is preferably greater than the thickness of the oxynitride film 14 measured in the first direction D1.

[0059] As used herein, the expression “the electrode 13 is formed on those portions of the resistor 12 from which the oxynitride film 16 has been removed in the oxynitride film removal step” refers to the following two cases: a case where the electrode 13 is entirely formed on those portions from which the oxynitride film 14 has been removed as described above, and a case where only certain portions of the electrode 13 (i.e., portions other than portion 134 (described later)) are formed on those portions from which the oxynitride film 14 has been removed. That is, the expression “the electrode 13 is formed on those portions of the resistor 12 from which the oxynitride film 16 has been removed in the oxynitride film removal step” means that at least some portions of the electrode 13 are formed on those portions of the resistor 12 from which the oxynitride film 16 has been removed in the oxynitride film removal step.

[0060] The protective coating forming step is a step of forming the protective coating 15 to cover at least one of the resistor 12 or the oxynitride film 14. More specifically, the protective coating forming step includes forming the protective coating 15 on the entire upper surface of the oxynitride film 14 and corresponding portions of the main surface 133 of the pair of electrodes 13 by applying, for example, an aluminum oxide paste.

[0061] As a comparative example, suppose a case where heat treatment is performed after forming electrodes on the resistor. In this case, the heat treatment temperature is equal to or higher than 400°C. Therefore, the electrode needs to be formed of a material that has oxidation corrosion resistance at such a heat treatment temperature and does not cause a decrease in adhesion to the resistor. This narrows the range of electrode materials that can be selected, which is a problem of the comparative example.

[0062] In contrast, in the method for manufacturing the resistor 1 according to the first embodiment, only the resistor body 12 formed on the insulating substrate 11 is subjected to heat treatment, and the oxynitride film 16 formed on the resistor body 12 by the heat treatment is partially removed. Thereafter, the electrode 13 is formed on those portions from which the oxynitride film 16 has been removed. Therefore, there is no concern about oxidative corrosion of the electrode 13 or reduction in adhesion of the electrode 13 to the resistor body 12 due to the heat treatment, thereby achieving an advantage of increasing the degree of freedom in selecting the electrode material.

[0063] (3.2) Etching

[0064] Next, we will refer to Figure 3 A to Figure 3 C is used to describe the etching performed in the oxynitride film removal step. In the first embodiment, the etching in the oxynitride film removal step is dry etching. The dry etching can be, for example, reverse sputtering, ion etching, or ion milling. The etching gas can be, for example, argon (Ar) gas.

[0065] First, if Figure 3 As shown in FIG. 1A , the oxynitride film 16 already formed on the resistor 12 is selectively masked with the metal mask 200 so that the metal mask 200 covers the portion of the oxynitride film 16 that is to be left as the oxynitride film 14. Next, argon ions are caused to collide with the other portions of the oxynitride film 16 that are not masked by the metal mask 200. As a result, those portions of the oxynitride film 16 that are not masked by the metal mask 200 (i.e., the portions located on both sides of the oxynitride film 14 in the second direction D2) are removed (see FIG. 1B ). Figure 3 B).

[0066] Afterwards, while the oxynitride film 14 is still covered by the metal mask 200, the electrodes 13 are formed on both sides of the oxynitride film 14 in the second direction D2. Finally, the metal mask 200 is removed to obtain Figure 3 The structure shown in C.

[0067] Note that the etching process may include using a resist mask instead of the metal mask 200. Optionally, the metal mask 200 may be removed before the pair of electrodes 13 are formed.

[0068] (4) Characteristics of resistors

[0069] Next, we will refer to Figure 4 The characteristics of the resistor 1 according to the first embodiment are described. Figure 4 The results shown were obtained by performing elemental analysis on the resistor 12 that had been formed (deposited) on a glass substrate. Figure 4 In FIG. 1 , the horizontal axis represents the analysis depth in the resistor body 12, and the vertical axis represents the corresponding quantitative value (atomic percentage) of each element. Figure 4 In the example shown, the atomic ratio of Cr to Si in the resistor 12 is one to two. In other words, the atomic ratio of Si to Cr in the resistor 12 is two. Figure 4 In the example shown, the atomic percentage of N in the resistor 12 is 30 atomic %. Figure 4 In the example shown, the thickness of the resistor body 12 (ie, the thickness of the resistor body 12 measured in the first direction D1 ) is 100 nm.

[0070] In the resistor 1 according to the first embodiment, as described above, the resistor body 12 contains Cr, Si, N and O. As described above, the thickness of the resistor body 12 is 100 nm. Therefore, in this case, the middle portion of the resistor body 12 in the thickness direction (i.e., in the first direction D1) is 50 nm. In addition, at a position where the analysis depth is 50 nm, the atomic percentage of O in the resistor body 12 is about 2 atomic % (e.g., about 100 nm). Figure 4 That is, in the resistor 1 according to the first embodiment, at least in the middle (50 nm) of the resistor body 12 in the first direction D1, the atomic percentage of O in the resistor body 12 is equal to or less than 10 atomic %.

[0071] In the resistor 1 according to the first embodiment, the resistor 12 contains O, thereby enabling the resistor 12 to have a higher specific resistance.

[0072] exist Figure 4 In the example shown, the atomic percentage of O in the resistor 12 is about 2 atomic%. The atomic percentage of O in the resistor 12 only needs to be equal to or less than 10 atomic%. In addition, the atomic percentage of O in the resistor 12 only needs to be equal to or greater than 0 atomic%. That is, the atomic percentage of O in the resistor 12 can be equal to or greater than 0 atomic% and equal to or less than 10 atomic%. The atomic percentage of O in the resistor 12 is more preferably equal to or greater than 0.1 atomic% and equal to or less than 10 atomic%.

[0073] (5) Advantages

[0074] In the resistor 1 according to the first embodiment, the oxynitride film 14 is not formed on any electrode 13, thereby reducing the possibility of causing instability in the resistance value of the resistor 12, which is measured using a probe in contact with the electrode 13. Therefore, this makes it easier to adjust the resistance value of the resistor 12. In addition, the oxynitride film 14 is also not formed in any interface between the resistor 12 and the electrode 13, thereby ensuring electrical connection between the resistor 12 and the electrode 13.

[0075] Furthermore, in the resistor 1 according to the first embodiment, at least at the middle of the resistor body 12 in the first direction D1, the atomic ratio of Si to Cr in the resistor body 12 is equal to or greater than 2 / 3 and equal to or less than 4. Furthermore, at least at the middle of the resistor body 12 in the first direction D1, the atomic percentage of N in the resistor body 12 is equal to or less than 50 atomic %. This allows the specific resistance to be increased while the TCR is reduced.

[0076] Furthermore, the resistor 1 according to the first embodiment enables the specific resistance of the resistor 12 to be adjusted within the range of 500 μΩ·cm or higher and 30,000 μΩ·cm or lower by changing the chemical composition of Cr and Si in the resistor 12 .

[0077] Furthermore, in the resistor 1 according to the first embodiment, the resistor body 12 also contains O. At least in the middle of the resistor body 12 in the first direction D1, the atomic percentage of O in the resistor body 12 is equal to or less than 10 atomic %. This enables the resistor body 12 to have a higher specific resistance than the case where the resistor body 12 does not contain O.

[0078] Furthermore, in the method for manufacturing the resistor 1 according to the first embodiment, the oxynitride film 14 is formed on the resistor body 12 by subjecting the resistor body 12 to heat treatment and then partially removed. Thereafter, the electrode 13 is formed on those portions of the resistor body 12 from which the oxynitride film 14 has been removed. Therefore, there is no concern about oxidative corrosion of the electrode 13 or reduction in adhesion of the electrode 13 to the resistor body 12 due to the heat treatment, thereby increasing the degree of freedom in selecting the electrode material.

[0079] Furthermore, in the method for manufacturing the resistor 1 according to the first embodiment, the etching process performed in the oxynitride film removal step is dry etching. This makes it easier to remove at least a portion of the oxynitride film 14.

[0080] Furthermore, the method for manufacturing the resistor 1 according to the first embodiment further includes a protective coating forming step. The protective coating formed in the protective coating forming step covers at least one of the resistor body 12 or the oxynitride film 14. This enables the resistor body 12 to be protected.

[0081] (Second embodiment)

[0082] Next, we will refer to Figure 5 A resistor 1A according to a second embodiment is described. In the following description, the resistor 1 according to the first embodiment described above (see Figure 1-3 ) Any constituent elements of the resistor 1A according to the second embodiment having the same function as the corresponding parts will be denoted by the same reference numerals as those of the corresponding parts, and description thereof will be omitted herein.

[0083] The resistor 1A according to the second embodiment includes a second oxynitride film 14A instead of the first oxynitride film 14 , which is different from the resistor 1 according to the above-described first embodiment.

[0084] like Figure 5 As shown, the resistor 1A according to the second embodiment includes an insulating substrate 11 , a resistor body 12 , a pair of electrodes 13 , and an oxynitride film 14A. The resistor 1A according to the second embodiment further includes a protective coating 15 .

[0085] The oxynitride film 14A is provided on the resistor 12. A pair of electrodes 13 is provided on the resistor 12. The pair of electrodes 13 and the oxynitride film 14A are arranged side by side in the second direction D2. In other words, the pair of electrodes 13 are provided on both sides of the oxynitride film 14A in the second direction D2. A gap G1 is left between each electrode in the pair of electrodes 13 and the oxynitride film 14A. That is, the oxynitride film 14A is a second oxynitride film (hereinafter referred to as "second oxynitride film 14A"), which has a gap G1 between each electrode in the pair of electrodes 13 and itself in the second direction D2. Therefore, each of the two end faces 141 of the second oxynitride film 14A does not contact the end face 131 of a corresponding electrode in the pair of electrodes 13.

[0086] Furthermore, in the resistor 1A according to the second embodiment, as Figure 5 As shown, the corresponding portion of the resistor body 12 (ie, the portion of the resistor body 12 corresponding to the gap G1) is exposed. Therefore, in the resistor 1A according to the second embodiment, the protective coating 15 covers both the resistor body 12 and the oxynitride film 14A equally.

[0087] In the resistor 1A according to the second embodiment, the oxynitride film 14A is not formed on any electrode 13 either, thereby reducing the possibility of causing instability in the resistance value of the resistor 12 measured with the probe in contact with the electrode 13. Therefore, it is easier to adjust the resistance value of the resistor 12. In addition, the oxynitride film 14A is not formed in the interface between the resistor 12 and the electrode 13 either, thereby ensuring electrical connection between the resistor 12 and the electrode 13.

[0088] (Third Implementation Method)

[0089] Next, we will refer to Figure 6 A resistor 1B according to a third embodiment is described. In the following description, the resistor 1 according to the first embodiment described above (see Figure 1-3) Any constituent elements of the resistor 1B according to the third embodiment having the same function as the corresponding parts will be denoted by the same reference numerals as those of the corresponding parts, and description thereof will be omitted herein.

[0090] The resistor 1B according to the third embodiment includes a third oxynitride film 14B instead of the first oxynitride film 14 , which is different from the resistor 1 according to the above-described first embodiment.

[0091] like Figure 6 As shown, the resistor 1B according to the third embodiment includes an insulating substrate 11 , a resistor body 12 , a pair of electrodes 13 , and an oxynitride film 14B. The resistor 1B according to the third embodiment further includes a protective coating 15 .

[0092] The oxynitride film 14B is provided on the resistor body 12. In addition, a pair of electrodes 13 is provided on the resistor body 12. The pair of electrodes 13 and the oxynitride film 14B are arranged side by side in the second direction D2. In other words, the pair of electrodes 13 are provided on both sides of the oxynitride film 14B in the second direction D2. Each of the pair of electrodes 13 includes a portion (extension portion) 134. The portion 134 extends toward the oxynitride film 14B in the second direction D2. This causes the portion 134 of each electrode in the pair of electrodes 13 to overlap with the oxynitride film 14B in the first direction D1. That is, in the resistor 1B according to the third embodiment, the oxynitride film 14B is a third oxynitride film (hereinafter referred to as "third oxynitride film 14B").

[0093] In the resistor 1B according to the third embodiment, as in the resistor 1 according to the first embodiment, the protective coating 15 also covers the oxynitride film 14B provided on the resistor body 12. In addition, in the resistor 1B according to the third embodiment, the protective coating 15 also covers corresponding portions of a pair of electrodes 13 provided on both sides of the oxynitride film 14B.

[0094] In the resistor 1B according to the third embodiment, the oxynitride film 14B is not formed on any electrode 13 either, thereby reducing the possibility of causing instability in the resistance value of the resistor 12 measured with the probe in contact with the electrode 13. Therefore, it is easier to adjust the resistance value of the resistor 12. In addition, the oxynitride film 14B is not formed in the interface between the resistor 12 and the electrode 13 either, thereby ensuring the electrical connection between the resistor 12 and the electrode 13.

[0095] (Fourth Implementation Method)

[0096] Next, we will refer to Figure 7 A to Figure 7The resistor 1C according to the fourth embodiment and the method for manufacturing the resistor 1C are described in the following description. Figure 1-3 ) Any constituent elements of the resistor 1C according to the fourth embodiment having the same function as the corresponding parts will be denoted by the same reference numerals as the reference numerals of the corresponding parts, and descriptions thereof will be omitted herein.

[0097] The resistor 1C according to the fourth embodiment does not include an oxynitride film, which is different from the resistor 1 according to the first embodiment.

[0098] like Figure 7 As shown in FIG. 4 , the resistor 1C according to the fourth embodiment includes an insulating substrate 11, a resistor body 12, a pair of electrodes 13, and a protective film 15. That is, in the resistor 1C according to the fourth embodiment, the oxynitride film 16 (refer to FIG. 1 ) formed on the resistor body 12 in the oxynitride film forming step has been completely removed. Figure 7 D).

[0099] The method for manufacturing the resistor 1C according to the fourth embodiment includes a substrate providing step, a resistor body forming step, an oxynitride film forming step, an oxynitride film removing step, and an electrode forming step. The method for manufacturing the resistor 1C according to the fourth embodiment also includes a protective coating forming step. In the method for manufacturing the resistor 1C according to the fourth embodiment, the substrate providing step, the resistor body forming step, the oxynitride film forming step, the oxynitride film removing step, the electrode forming step, and the protective coating forming step are performed in sequence.

[0100] For example, Figure 7 As shown in A, the substrate providing step includes arranging the insulating substrate 11 so that its first major surface 111 faces upward and its second major surface 112 faces downward.

[0101] like Figure 7 As shown in FIG. 1B , the resistor body forming step includes forming the resistor body 12 on the entire first main surface 111 of the insulating substrate 11 by a thin film deposition process such as sputtering.

[0102] like Figure 7 As shown in FIG. 1C, the oxynitride film forming step includes: performing heat treatment on the insulating substrate 11 on which the resistor 12 is formed and loaded into the heat treatment furnace 100 to form a film on one surface (for example, Figure 7 An oxynitride film 16 is formed on the upper surface of C).

[0103] For example, the oxynitride film removal step includes removing the oxynitride film 16 by etching. Figure 7In the example shown in D, the oxynitride film 16 is completely removed in the oxynitride film removing step. That is, once the oxynitride film removing step is performed, no oxynitride film remains.

[0104] like Figure 7 As shown in FIG. 8E, the electrode forming step includes forming a pair of electrodes 13 on both end portions of the resistor 12 in the second direction D2 by, for example, screen printing using a paste material.

[0105] Finally, if Figure 7 As shown in FIG. 5F , the protective coating forming step includes forming the protective coating 15 by applying, for example, an alumina paste so as to cover the corresponding parts of the resistor 12 and the pair of electrodes 13 .

[0106] In the resistor 1C according to the fourth embodiment, the oxynitride film is not formed on any electrode 13, thereby reducing the possibility of causing instability in the resistance value of the resistor 12 measured with the probe in contact with the electrode 13. Therefore, it is easier to adjust the resistance value of the resistor 12. In addition, the oxynitride film is not formed in the interface between the resistor 12 and the electrode 13, thereby ensuring the electrical connection between the resistor 12 and the electrode 13.

[0107] Furthermore, in the method for manufacturing the resistor 1C according to the fourth embodiment, the oxynitride film 16 is formed on the resistor 12 by heat-treating the insulating substrate 11 on which only the resistor 12 is formed. Then, after completely removing the oxynitride film 16 on the resistor 12, a pair of electrodes 13 are formed on the resistor 12. Therefore, there is no concern about oxidative corrosion of the electrodes 13 or reduction in adhesion of the electrodes 13 to the resistor 12 due to the heat treatment, thereby improving the degree of freedom in selecting the electrode material.

[0108] (Fifth Implementation Method)

[0109] Next, we will refer to Figure 8 A resistor 1D according to a fifth embodiment is described. In the following description, the resistor 1 according to the first embodiment described above (see Figure 1-3 ) Any constituent elements of the resistor 1D according to the fifth embodiment having the same function as the corresponding parts will be denoted by the same reference numerals as those of the corresponding parts, and description thereof will be omitted herein.

[0110] The resistor 1D according to the fifth embodiment further includes a second protective coating 17 different from the protective coating 15 (hereinafter referred to as "first protective coating 15"), which is different from the resistor 1 according to the first embodiment. In addition, the resistor 1D according to the fifth embodiment further includes a pair of end surface electrodes 18, a pair of plating layers 19, and a pair of back electrodes 20, which is another difference from the resistor 1 according to the first embodiment.

[0111] The resistor 1D according to the fifth embodiment includes an insulating substrate 11, a resistor body 12, a pair of electrodes 13 (hereinafter referred to as a "pair of upper surface electrodes 13"), an oxynitride film 14A, and a first protective coating 15. The resistor 1D also includes a second protective coating 17, a pair of end surface electrodes 18, a pair of plating layers 19, and a pair of back electrodes 20.

[0112] The oxynitride film 14A may be, for example, a second oxynitride film (hereinafter referred to as “second oxynitride film 14A”) arranged to leave a gap G1 between each of the pair of electrodes 13 and the oxynitride film 14A itself in the second direction D2 .

[0113] For example, the second protective coating (resin protective coating) 17 may be made of epoxy resin. The second protective coating 17 completely covers the first protective coating 15 and partially covers the pair of upper surface electrodes 13. That is, when viewed in a plane in the first direction D1, the second protective coating 17 covers the boundary between the first protective coating 15 and the pair of upper surface electrodes 13 to continuously extend from the first protective coating 15 to at least the corresponding portion of the pair of upper surface electrodes 13.

[0114] The second protective coating 17 can be formed, for example, by applying epoxy resin by screen printing and then curing the epoxy resin by irradiating the epoxy resin with ultraviolet rays. Note that the corresponding portions of the pair of upper surface electrodes 13 located between the two longitudinal ends of the first protective coating 15 in the second direction D2 (i.e., the portions covering the pair of upper surface electrodes 13) and the plating layer 19 are directly covered by the second protective coating 17.

[0115] Each of the pair of end surface electrodes 18 can be made of, for example, a CuNi alloy. The pair of end surface electrodes 18 are respectively located at the two longitudinal ends of the insulating substrate 11 in the second direction D2. The pair of end surface electrodes 18 are respectively formed at the two longitudinal ends of the insulating substrate 11 by, for example, a thin film deposition process such as sputtering. The pair of end surface electrodes 18 are respectively electrically connected to the pair of upper surface electrodes 13.

[0116] like Figure 8As shown, each of the pair of plating layers 19 includes a Ni plating layer 191 and a Sn plating layer 192. Each of the pair of plating layers 19 is connected to a portion of a corresponding one of the pair of upper surface electrodes 13 and is in contact with the second protective coating 17. In addition, each of the pair of plating layers 19 covers a corresponding one of the pair of end surface electrodes 18.

[0117] Each of the pair of back electrodes 20 can be made of, for example, an epoxy resin containing silver (Ag) as a conductive substance. The pair of back electrodes 20 are respectively located at the two longitudinal ends of the second main surface 112 of the insulating substrate 11 in the second direction D2. The pair of back electrodes 20 can be formed, for example, by applying epoxy resin to the two longitudinal ends of the second main surface 112 of the insulating substrate 11 by screen printing, and then curing the epoxy resin by irradiating the epoxy resin with ultraviolet rays. A pair of back electrodes 20 corresponds to a pair of upper surface electrodes 13 one by one. Optionally, a pair of back electrodes 20 can be omitted.

[0118] In the resistor 1D according to the fifth embodiment, the oxynitride film 14 is not formed on any upper surface electrode 13, thereby reducing the possibility of causing instability in the resistance value of the resistor 12 measured with the probe in contact with the upper surface electrode 13. Therefore, it is easier to adjust the resistance value of the resistor 12. In addition, the oxynitride film 14 is not formed in the interface between the resistor 12 and the upper surface electrode 13, thereby ensuring the electrical connection between the resistor 12 and the upper surface electrode 13.

[0119] Note that the oxynitride film 14A is not necessarily the second oxynitride film but may be the first oxynitride film in contact with the end of the electrode 13 in the second direction D2 or the third oxynitride film partially overlapping with the electrode 13 in the first direction D1.

[0120] (Variation plan)

[0121] Note that the first to fifth embodiments described above are merely exemplary embodiments of the various embodiments of the present disclosure and should not be construed as limiting. Rather, the first to fifth embodiments can be easily changed in various ways according to design selection or any other factors without departing from the scope of the present disclosure. Next, variations of the first to fifth embodiments will be listed in sequence. Note that the variations described below can be appropriately combined.

[0122] (1) First Variation

[0123] In the above-mentioned first to fifth embodiments, the resistor 12 contains Cr, Si, N and O. Optionally, the resistor 12 may contain not only Cr, Si, N and O, but also aluminum (Al). That is, in the resistor 1 according to the first variation, the resistor 12 also contains Al. In the resistor 12, at least in the middle of the resistor 12 in the first direction D1 (i.e., in the thickness direction defined about the resistor 12), the atomic percentage of Al is equal to or less than 30 atomic %.

[0124] In the resistor 1 according to the first variation, the resistor body 12 contains not only Cr, Si, N, and O but also Al. This makes it possible to increase the specific resistance of the resistor body 12 compared to the case where the resistor body 12 does not contain Al.

[0125] (2) Second Variation

[0126] In the first to fifth embodiments described above, the etching process performed in the oxynitride film removal step is dry etching. However, this is only an example and should not be construed as limiting. The etching process is not necessarily dry etching, but may also be wet etching. As an example, reference will be made to Fig. 9 A to Fig. 9 C describes how to perform wet etching as an etching process.

[0127] When wet etching is performed, Fig. 9 As shown in A, the insulating substrate 11 having the oxynitride film 16 formed on the resistor 12 is immersed in a solution 500 contained in a container 400. The solution 500 is a solution that reacts with the oxynitride film 16 and may be, for example, hydrofluoric acid.

[0128] exist Fig. 9 In the example shown in A of FIG. 1 , the central portion of the oxynitride film 16 is masked with the resist mask 300 to leave the central portion of the oxynitride film 16 as the oxynitride film 14. Therefore, the remaining portion of the oxynitride film 16 (i.e., the portion thereof not masked by the resist mask 300) reacts with the solution 500 and is removed. As a result, as shown in FIG. Fig. 9 As shown in FIG. 8B , the portion of the oxynitride film 16 covered by the resist mask 300 will become the oxynitride film 14 .

[0129] Next, if Fig. 9 As shown in FIG. 1B, a pair of electrodes 13 are formed on both sides of the oxynitride film 14 in the second direction D2. Then, the resist mask 300 is removed to obtain Fig. 9 The structure shown in C.

[0130] (3) Other variations

[0131] Next, other variations will be listed in turn.

[0132] In the above-described first to fifth embodiments, the resistor 12 contains O. However, the resistor 12 does not necessarily contain O. That is, the resistor 12 only needs to contain at least Cr, Si, and N.

[0133] In the first to fifth embodiments described above, each of the pair of electrodes 13 contains Cu. Alternatively, each of the pair of electrodes 13 may contain, for example, Ag, or may contain both Cu and Ag. That is, each of the pair of electrodes 13 needs to contain at least one of Cu or Ag.

[0134] If each of the pair of electrodes 13 contains Ag, each of the pair of electrodes 13 may be made of, for example, an AgPd alloy. In each electrode 13, the atomic percentage of Ag may be, for example, 97 atomic %. In addition, in each electrode 13, the atomic percentage of Pd may be, for example, 3 atomic %.

[0135] In addition, if each of the pair of electrodes 13 contains both Cu and Ag, each of the pair of electrodes 13 can be made of, for example, an AgCuPd alloy. In each electrode 13, the atomic percentage of Ag can be, for example, 98 atomic%. In addition, in each electrode 13, the atomic percentage of Cu can be, for example, 1 atomic%. In addition, in each electrode 13, the atomic percentage of Pd can be, for example, 1 atomic%.

[0136] In the above-described first to fifth embodiments, the resistor 12 is formed by a thin film deposition process such as sputtering. Alternatively, for example, the resistor 12 may also be formed by using a resistor paste.

[0137] In the above-described first to fifth embodiments, the pair of electrodes 13 is formed by screen printing using a paste material. Alternatively, the pair of electrodes 13 may also be formed by a thin film deposition process such as sputtering.

[0138] (aspect)

[0139] The above description provides detailed implementations of the following aspects of the present disclosure.

[0140] A resistor (1; 1A; 1B; 1C; 1D) according to a first aspect includes an insulating substrate (11), a resistor body (12), an electrode (13) and an oxynitride film (14; 14A; 14B). The resistor body (12) contains Cr, Si and N and is disposed on the insulating substrate (11). The electrode (13) contains at least one of Cu or Ag and is disposed on the resistor body (12). The oxynitride film (14; 14A; 14B) is disposed on the resistor body (12). The electrode (13) and the oxynitride film (14; 14A; 14B) are arranged side by side in a second direction (D2) perpendicular to the first direction (D1). The first direction (D1) defines a thickness direction with respect to the insulating substrate (11). The oxynitride film (14; 14A; 14B) is a first oxynitride film (14), a second oxynitride film (14A) or a third oxynitride film (14B). The first oxynitride film (14) is arranged to contact an end (131) of the electrode (13) in the second direction (D2). The second oxynitride film (14A) is arranged to leave a gap (G1) between the electrode (13) and the second oxynitride film (14A) itself in the second direction (D2). The third oxynitride film (14B) is arranged to overlap a portion (134) of the electrode (13) in the first direction (D1).

[0141] According to this aspect, the oxynitride film (14; 14A; 14B) is not formed on the electrode (13), thereby reducing the possibility of causing instability in the resistance value of the resistor (12) measured by the probe in contact with the electrode (13). Therefore, this makes it easier to adjust the resistance value of the resistor (12).

[0142] In the resistor (1; 1A; 1B; 1C; 1D) according to the second aspect (which may be implemented in combination with the first aspect), at least in the middle of the resistor (12) in the first direction (D1), the atomic ratio of Si to Cr in the resistor (12) is equal to or greater than 2 / 3 and equal to or less than 4. At least in the middle of the resistor (12) in the first direction (D1), the atomic percentage of N in the resistor (12) is equal to or less than 50 atomic %.

[0143] This aspect allows to increase the specific resistance while reducing the TCR.

[0144] In the resistor (1; 1A; 1B; 1C; 1D) according to the third aspect (which can be implemented in combination with the first aspect or the second aspect), the specific resistance of the resistor (12) is equal to or higher than 500 μΩ･cm and equal to or lower than 30,000 μΩ･cm.

[0145] This aspect enables the specific resistance of the resistor (12) to be adjusted.

[0146] In the resistor (1; 1A; 1B; 1C; 1D) according to the fourth aspect (which can be implemented in combination with any one of the first to third aspects), the resistor (12) further contains Al. At least in the middle of the resistor (12) in the first direction (D1), the atomic percentage of Al in the resistor (12) is equal to or less than 30 atomic %.

[0147] This aspect enables the resistor (12) to have a higher specific resistance compared to the case where the resistor (12) does not contain Al.

[0148] In the resistor (1; 1A; 1B; 1C; 1D) according to the fifth aspect (which can be implemented in combination with any one of the first to fourth aspects), the resistor (12) further contains O. At least in the middle of the resistor (12) in the first direction (D1), the atomic percentage of O in the resistor (12) is equal to or less than 10 atomic %.

[0149] This aspect enables the resistor (12) to have a higher specific resistance compared to the case where the resistor (12) does not contain O.

[0150] According to the sixth aspect, a method for manufacturing a resistor (1; 1A; 1B; 1C; 1D) includes a resistor body forming step, an oxynitride film forming step, an oxynitride film removing step, and an electrode forming step. The resistor body forming step includes forming a resistor body (12) on an insulating substrate (11). The oxynitride film forming step includes forming an oxynitride film (16) on the resistor body (12) by heat treating the resistor body (12) formed in the resistor body forming step. The oxynitride film removing step includes removing at least a portion of the oxynitride film (16) formed in the oxynitride film forming step by etching. The electrode forming step includes forming an electrode (13) on the portion of the resistor body (12) from which the oxynitride film (16) has been removed in the oxynitride film removing step.

[0151] According to this aspect, the oxynitride film (14; 14A; 14B) is not formed on the electrode (13), thereby reducing the possibility of causing instability in the resistance value of the resistor (12) measured by the probe in contact with the electrode (13). Therefore, this makes it easier to adjust the resistance value of the resistor (12).

[0152] In the method for manufacturing a resistor (1; 1A; 1B; 1C; 1D) according to the seventh aspect (which can be implemented in combination with the sixth aspect), the etching is dry etching.

[0153] This aspect enables at least partial removal of the oxynitride film (14; 14A; 14B).

[0154] In the method for manufacturing a resistor (1; 1A; 1B; 1C; 1D) according to the eighth aspect (which can be implemented in combination with the sixth aspect), the etching is wet etching.

[0155] This aspect enables at least partial removal of the oxynitride film (14; 14A; 14B).

[0156] According to the ninth aspect (which can be implemented in combination with any one of the sixth to eighth aspects), the method for manufacturing a resistor (1; 1A; 1B; 1C; 1D) further includes a protective coating forming step. The protective coating forming step includes forming a protective coating (15) to cover the resistor body (12).

[0157] This aspect enables the resistor body (12) to be protected by the protective coating (15).

[0158] Note that the constituent elements according to the second to fifth aspects are not essential constituent elements of the resistor (1; 1A; 1B; 1C; 1D) but may be omitted as appropriate.

[0159] Note that the features according to the seventh to ninth aspects are not essential features of the method for manufacturing the resistor (1; 1A; 1B; 1C; 1D) but may be appropriately omitted.

[0160] List of Reference Numerals

[0161] 1.1A, 1B, 1C, 1D resistors

[0162] 11Insulation base

[0163] 12 resistors

[0164] 13 electrodes

[0165] 14First oxynitride film (oxynitride film)

[0166] 14A: Second oxynitride film (oxynitride film)

[0167] 14B third oxynitride film (oxynitride film)

[0168] 15 Protective coating

[0169] 16 Oxynitride film

[0170] 131, 132 end face (end)

[0171] Part 134

[0172] D1 first direction

[0173] D2 Second direction

[0174] G1 Clearance

Claims

1. A resistor, comprising: Insulation substrate; A resistor body, the resistor body contains Cr, Si and N and is disposed on the insulating substrate; an electrode containing at least one of Cu and Ag and disposed on the resistor; as well as an oxynitride film provided on the resistor, The electrode and the oxynitride film are arranged side by side in a second direction perpendicular to a first direction, the first direction defining a thickness direction with respect to the insulating substrate, and The oxynitride film is: a first oxynitride film disposed in contact with an end portion of the electrode in the second direction; a second oxynitride film arranged to leave a gap between the electrode and the second oxynitride film itself in the second direction; or A third oxynitride film is arranged to overlap a portion of the electrode in the first direction.

2. The resistor according to claim 1, wherein At least in the middle of the resistor in the first direction, the atomic ratio of Si to Cr in the resistor is equal to or greater than 2 / 3 and equal to or less than 4, and At least in the middle of the resistor in the first direction, the atomic percentage of N in the resistor is equal to or less than 50 atomic %.

3. The resistor according to claim 1 or 2, wherein The specific resistance of the resistor is equal to or higher than 500 μΩ･cm and equal to or lower than 30,000 μΩ･cm.

4. The resistor according to any one of claims 1 to 3, wherein The resistor also contains Al, and At least in the middle of the resistor in the first direction, the atomic percentage of Al in the resistor is equal to or less than 30 atomic %.

5. The resistor according to any one of claims 1 to 4, wherein The resistor also contains O, and At least in the middle of the resistor in the first direction, the atomic percentage of O in the resistor is equal to or less than 10 atomic %.

6. A method for manufacturing a resistor, the method comprising: A substrate providing step, the substrate providing step comprising: providing an insulating substrate; A resistor forming step, the resistor forming step comprising: forming a resistor on the insulating substrate; an oxynitride film forming step, the oxynitride film forming step comprising: forming an oxynitride film on the resistor by heat treating the resistor formed in the resistor forming step; an oxynitride film removing step, the oxynitride film removing step comprising: removing at least a portion of the oxynitride film formed in the oxynitride film forming step by etching; and An electrode forming step, the electrode forming step comprising: forming an electrode on the portion of the resistor from which the oxynitride film has been removed in the oxynitride film removing step.

7. The method according to claim 6, wherein The etching is dry etching.

8. The method according to claim 6, wherein The etching is wet etching.

9. The method according to any one of claims 6 to 8, further comprising a protective coating forming step, the protective coating forming step comprising: A protective coating is formed to cover at least one of the resistor or the oxynitride film.

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