Method for setting advance and retreat operation scheme of shielding body and plating device

Abstract

The invention provides a method capable of improving uniformity of a plating film formed on a substrate, and a plating apparatus. A method sets, in a computer, an advancing / retreating operation scheme of a shield body in a plating apparatus provided with the shield body, the shield body being movable to a shielding position interposed between a surface to be plated of a substrate and an anode and to a retracted position retracted from between the surface to be plated of the substrate and the anode. The method comprises the following steps: acquiring an anti-corrosion pattern of the substrate; calculating a plating growth coefficient for each predetermined angle region of the substrate on the basis of the acquired resist pattern; and setting an advancing and retreating operation scheme of the shielding body on the basis of the calculated plating growth coefficient.

Description

Technical Field

[0001] The present application relates to a method for setting a forward and backward movement scheme of a shielding body and a plating apparatus. Background Art

[0002] As an example of a plating apparatus, a so-called dipping-type plating apparatus in which a substrate and an anode are vertically arranged is known (for example, refer to Patent Document 1). Further, as another example of a plating apparatus, a cup-type electroplating apparatus is known (for example, refer to Patent Document 2). The cup-type electroplating apparatus immerses a substrate (for example, a semiconductor wafer) held by a substrate holder with the surface to be plated facing downward in a plating solution, and applies a voltage between the substrate and the anode, thereby depositing a conductive film (plated film) on the surface of the substrate.

[0003] In a plating apparatus, generally, based on the target plated film thickness and the actual plating area of the substrate on which the plating process is to be performed, parameters such as a plating current value and a plating time are preset by a user as a plating process scheme, and the plating process is performed based on the set process scheme. Further, in the plating process, parameters related to the plated film thickness are detected by a sensor and the thickness of the plated film is measured, and the plating conditions are adjusted. In Patent Document 2, a shielding body that can move forward and backward between a shielding position between the surface to be plated of the substrate and the anode and a retracted position retracted from between the surface to be plated and the anode is proposed.

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2005-29863

[0005] Patent Document 2: Japanese Patent No. 7074937

[0006] By moving the shielding body between a shielding position between the surface to be plated of the substrate and the anode and a retracted position retracted from between the surface to be plated and the anode, the growth rate of the plated film on a specific portion can be adjusted. Such a shielding body is also considered to operate based on a detected value detected during the plating process, but by determining the operation in advance as part of the plating process scheme, the control efficiency can be improved and the uniformity of the plated film can be improved. Summary of the Invention

[0007] In view of the above actual situation, an object of the present application is to provide a plating apparatus capable of improving the uniformity of a plated film formed on a substrate.

[0008] According to one embodiment, a method is provided for setting a retraction and extension motion plan of a shielding body in a plating apparatus having a shielding body in a computer. The shielding body can move between a shielding position between a plating surface of a substrate and an anode and a retracted position retracted from between the plating surface of the substrate and the anode. The method includes the following steps: obtaining an etching pattern of the substrate; calculating a plating growth coefficient for each specified angular region of the substrate based on the obtained etching pattern; and setting the retraction and extension motion plan of the shielding body based on the calculated plating growth coefficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 FIG. 6 is a perspective view showing the overall structure of the plating apparatus of the present embodiment.

[0010] Figure 2 FIG. 10 is a top view showing the overall structure of the plating apparatus of the present embodiment.

[0011] Figure 3 FIG. 14 is a longitudinal sectional view briefly showing the structure of the plating module of the present embodiment.

[0012] Figure 4 FIG. 18 is a schematic view of observing the shielding body and the substrate of the present embodiment from below.

[0013] Figure 5 FIG. 22 is a flowchart illustrating an example of a method for setting a retraction and extension motion plan based on a control module.

[0014] Figure 6 FIG. 26 is a graph showing an example of a plating growth coefficient.

[0015] Figure 7 FIG. 30 is a view showing an example of a region of a plating surface used in the calculation of the plating growth coefficient.

[0016] Figure 8 FIG. 34 is a simplified functional block diagram of a control module according to one embodiment.

[0017] Figure 9 FIG. 38 is a simplified functional block diagram of the machine learning apparatus of the present embodiment.

[0018] Figure 10 FIG. 42 is a graph showing an example of the retraction and extension motion positions of the shielding body at each angular position of the substrate as a retraction and extension motion plan.

[0019] Figure 11 FIG. 46 is a view showing an example of displaying the plating growth coefficient or the retraction and extension motion plan of the shielding body for each specified angular region on a display unit.

[0020] REFERENCE MARK DESCRIPTION

[0021] 400... plating module; 410... plating bath; 430... anode; 440... substrate holder; 448... rotating mechanism; 460... sensor; 470... shield; 472... drive mechanism; 800... control module; 802... display unit; 852... state variable acquisition unit; 858... decision-making unit; 859... storage unit; 902... state variable acquisition unit; 904... learning model generation unit; 905... evaluation value calculation unit; 906... learning unit; 1000... plating apparatus; Wf... substrate. Detailed Embodiment

[0022] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding structural elements are denoted by the same reference numerals and redundant descriptions are omitted.

[0023] <Overall Structure of Plating Apparatus>

[0024] Figure 1 is a perspective view showing the overall structure of the plating apparatus according to the present embodiment. Figure 2 is a top view showing the overall structure of the plating apparatus according to the present embodiment. The plating apparatus according to the present embodiment is used to perform a plating process on a substrate. The substrate includes a square substrate and a circular substrate. As Figure 1 , Figure 2 shown, the plating apparatus 1000 includes: a loading port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-dipping module 300, a plating module 400, a cleaning module 500, a spin dryer 600, a transfer device 700, and a control module (controller) 800.

[0025] The loading port 100 is a module for loading a substrate, which is an object to be plated, stored in a cassette such as an unillustrated FOUP, into the plating apparatus 1000 or unloading the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, four loading ports 100 are arranged in a horizontal row, but the number and arrangement of the loading ports 100 are arbitrary. The transfer robot 110 is a robot for transferring the substrate, and is configured to transfer the substrate between the loading port 100, the aligner 120, the pre-wetting module 200, and the spin dryer 600. The transfer robot 110 and the transfer device 700 can transfer the substrate via an unillustrated temporary placement table when transferring the substrate between the transfer robot 110 and the transfer device 700. The aligner 120 is a module for aligning the position of the orientation plane, notch, etc. of the substrate with a specified direction. In the present embodiment, two aligners 120 are arranged in a horizontal row, but the number and arrangement of the aligners 120 are arbitrary.

[0026] The pre-wetting module 200 wets the surface to be plated of the substrate before plating treatment with a treatment liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. The pre-wetting module 200 is configured to perform a pre-wetting treatment, which is a treatment for easily supplying the plating liquid into the pattern by replacing the treatment liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wetting modules 200 are arranged and configured in the vertical direction, but the number and configuration of the pre-wetting modules 200 are arbitrary.

[0027] The pre-dipping module 300 is configured to perform a pre-dipping treatment, which is a treatment for etching and removing an oxide film with a relatively high resistance existing on the surface of a seed layer formed on the surface to be plated of a substrate before plating treatment, such as sulfuric acid, hydrochloric acid, etc., and cleaning or activating the surface of the plating substrate. In the present embodiment, two pre-dipping modules 300 are arranged and configured in the vertical direction, but the number and configuration of the pre-dipping modules 300 are arbitrary.

[0028] The plating module 400 performs a plating treatment on the substrate. In the present embodiment, there are two groups of 12 plating modules 400 arranged in 3 rows in the vertical direction and 4 columns in the horizontal direction, so a total of 24 plating modules 400 are provided, but the number and configuration of the plating modules 400 are arbitrary.

[0029] The cleaning module 500 is configured to perform a cleaning treatment on the substrate in order to remove the plating liquid and the like remaining on the substrate after the plating treatment. In the present embodiment, two cleaning modules 500 are arranged and configured in the vertical direction, but the number and configuration of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for rotating the substrate at a high speed and drying it after the cleaning treatment. In the present embodiment, two spin dryers are arranged and configured in the vertical direction, but the number and configuration of the spin dryers are arbitrary.

[0030] The transfer device 700 is a device for transferring the substrate between multiple modules in the plating device 1000. The control module 800 is configured to control multiple modules of the plating device 1000 and can be composed of, for example, a general computer or a dedicated computer equipped with an input / output interface with the operator.

[0031] An example of a series of plating treatments of the plating device 1000 will be described. First, the substrate stored in the cassette is loaded into the loading port 100. Then, the transfer robot 110 takes out the substrate from the cassette at the loading port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the positions of the orientation plane, notch, etc. of the substrate with a specified direction. The transfer robot 110 transfers the substrate whose direction has been aligned by the aligner 120 to the transfer device 700.

[0032] The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wetting module 200. The pre-wetting module 200 performs a pre-wetting process on the substrate. The transfer device 700 transfers the substrate that has undergone the pre-wetting process to the pre-dipping module 300. The pre-dipping module 300 performs a pre-dipping process on the substrate. The transfer device 700 transfers the substrate that has undergone the pre-dipping process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0033] The transfer device 700 transfers the substrate that has undergone the plating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate that has undergone the cleaning process to the spin dryer 600. The spin dryer 600 performs a drying process on the substrate. The transfer robot 110 receives the substrate from the spin dryer 600 and transfers the substrate that has undergone the drying process to the cassette at the loading port 100. Finally, the cassette containing the substrate is removed from the loading port 100.

[0034] <Structure of the plating module>

[0035] Next, the structure of the plating module 400 will be described. Since the 24 plating modules 400 of this embodiment have the same structure, only one plating module 400 will be described. Figure 3 is a longitudinal sectional view briefly showing the structure of the plating module 400 of this embodiment. As Figure 3 shown, the plating module 400 includes a plating tank 410 for accommodating the plating solution. The plating tank 410 is formed of a cylindrical tank with an open upper surface and includes an unillustrated outer tank provided around it in such a way as to accumulate the plating solution that overflows from the upper edge.

[0036] The plating module 400 includes a substrate holder 440 for holding the substrate Wf in a state where the surface to be plated Wf-a faces downward. In addition, the substrate holder 440 has a power supply contact for supplying power to the substrate Wf from an unillustrated power source. The plating module 400 includes a lifting mechanism 442 for lifting and lowering the substrate holder 440. In addition, in one embodiment, the plating module 400 includes a rotating mechanism 448 for rotating the substrate holder 440 about a vertical axis. The lifting mechanism 442 and the rotating mechanism 448 can be realized by a known mechanism such as a motor.

[0037] The plating module 400 includes a diaphragm 420 that divides the inside of the plating tank 410 in the vertical direction. The inside of the plating tank 410 is divided by the diaphragm 420 into a cathode region 422 and an anode region 424. Plating solutions are filled in the cathode region 422 and the anode region 424 respectively. In addition, in this embodiment, an example of the setting of the diaphragm 420 is shown, but the diaphragm 420 may not be provided. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424.

[0038] A resistor body 450 is disposed in the cathode region 422 opposite to the diaphragm 420. The resistor body 450 is a component for realizing the uniformity of the plating treatment of the plated surface Wf-a of the substrate Wf. The resistor body 450 is a resistor body with respect to the current flowing between the anode 430 and the substrate Wf, and is composed of, for example, an electrically insulating material such as PVC (polyvinyl chloride) formed with a plurality of holes. In addition, the plating module 400 may not have the resistor body 450.

[0039] In the present embodiment, a sensor 460 is provided in the cathode region 422. As an example, the sensor 460 is supported by the plating bath 410 or the resistor body 450. In addition, the sensor 460 may be fixedly supported immovably or may be supported so as to be movable in the horizontal direction or the vertical direction. In the present embodiment, a plurality of sensors 460 are provided along the radial direction of the substrate Wf. The detection signal based on the sensor 460 is input to the control module 800. In the present embodiment, the sensor 460 and the control module 800 are an example of a "film thickness measurement module" for measuring the film thickness of the plating film formed on the plated surface Wf-a of the substrate Wf. The sensor 460 detects parameters related to the plating film formed on the plated surface Wf-a of the substrate Wf. As an example, a distance sensor for measuring the distance between the sensor 460 and the substrate Wf (plating film) or a displacement sensor for measuring the displacement of the plated surface Wf-a of the substrate Wf can be used. As the sensor 460, a sensor for inferring the formation speed (growth speed) of the plating film as a parameter related to the film thickness of the plating film can also be used. Specifically, as the sensor 460, for example, an optical sensor such as a white confocal type, a potential sensor, a magnetic field sensor, or an eddy current sensor can be used.

[0040] When a potential sensor is used as the sensor 460, the sensor 460 may also be provided between the substrate Wf and the anode 430. In other words, the sensor 460 may be provided at a position overlapping the substrate Wf and the anode 430 when viewed from a direction perpendicular to the plated surface Wf-a of the substrate Wf. In addition, at least one reference potential sensor (not shown) may also be provided in the plating bath 410. The reference potential sensor may be disposed outside the region between the substrate Wf and the anode 430. In other words, the reference potential sensor may be provided at a position not overlapping the substrate Wf and the anode 430 when viewed from a direction perpendicular to the plated surface Wf-a of the substrate Wf. Moreover, the control module 800 can measure the film thickness of the plating film formed on the plated surface Wf-a based on the potential difference between the sensor 460 as the potential sensor and the reference potential sensor.

[0041] In addition, a shielding body 470 for shielding the current flowing from the anode 430 to the substrate Wf is provided in the cathode region 422. The shielding body 470 is a substantially plate-like member made of, for example, a dielectric material. Figure 4 is a schematic view of the shielding body 470 and the substrate Wf of the present embodiment as viewed from below. In addition, in Figure 4 , the illustration of the substrate holder 440 that holds the substrate Wf is omitted. The shielding body 470 is configured to be movable to a shielding position between the plating surface Wf-a of the substrate Wf and the anode 430 (the position indicated by the dashed line in Figure 3 ), and a retracted position retracted from between the plating surface Wf-a and the anode 430 (the position indicated by the solid line in Figure 3 and Figure 4 ) by a drive mechanism 472 (see Figure 3 and Figure 4 ). In other words, the shielding body 470 is configured to be movable to a shielding position below the plating surface Wf-a and a retracted position away from below the plating surface Wf-a. The drive mechanism 472 may also be configured to adjust the shielding amount of the shielding body 470 by adjusting the shielding position of the shielding body 470 between the plating surface Wf-a and the anode 430. The drive mechanism 472 can be realized by a known mechanism such as a motor or a solenoid, and is controlled by a control module 800. In the examples shown in Figure 3 and Figure 4 , the shielding body 470 shields a part of the circumferential direction of the outer peripheral region of the plating surface Wf-a of the substrate Wf in the shielding position. In addition, in the example shown in Figure 4 , the shielding body 470 is formed in a conical shape that tapers toward the center of the substrate Wf. However, it is not limited to such an example, and the shielding body 470 can use a structure having an arbitrary shape determined in advance through experiments or the like.

[0042] <Plating Process>

[0043] Next, the plating process of the plating module 400 of the present embodiment will be described in more detail. By using the lifting mechanism 442 to immerse the substrate Wf in the plating solution in the cathode region 422, the substrate Wf is exposed to the plating solution. In this state, the plating module 400 applies a voltage between the anode 430 and the substrate Wf, whereby the plating process can be performed on the plated surface Wf-a of the substrate Wf. In addition, in one embodiment, the plating process is performed while rotating the substrate holder 440 using the rotation mechanism 448. Through the plating process, a conductive film (plated film) is deposited on the plated surface Wf-a of the substrate Wf. In the present embodiment, the plated film formed on the plated surface Wf-a during the plating process is detected in real time by the sensor 460. Then, the control module 800 measures the film thickness of the plated film based on the detection value detected by the sensor 460. Thus, it is possible to measure in real time the change in the film thickness of the plated film formed on the plated surface Wf-a of the substrate Wf during the plating process.

[0044] In addition, in one embodiment, the plating module 400 includes a plurality of sensors 460 for measuring the film thickness of the plated film, so that the film thickness of the plated film at a plurality of locations on the plated surface Wf-a can be measured. In addition, by performing the detection based on the sensor 460 while rotating the substrate holder 440 (substrate Wf), the detection position based on the sensor 460 can be changed, and the film thickness at a plurality of locations or the entire circumference in the circumferential direction of the substrate Wf can also be measured.

[0045] In addition, the plating module 400 may change the rotation speed of the substrate Wf based on the rotation mechanism 448 during the plating process. As an example, the plating module 400 may rotate the substrate Wf slowly in order to infer the plated film thickness by the film thickness inference module. As an example, the plating module 400 may rotate the substrate Wf at the first rotation speed Rs1 during the plating process, and every predetermined period (for example, every few seconds), during the period when the substrate Wf rotates one turn or several turns, rotate the substrate Wf at the second rotation speed Rs2 slower than the first rotation speed Rs1. In this way, in particular, even when the sampling period based on the potential sensor 460 is small relative to the rotation speed of the substrate Wf, the plated film thickness of the substrate Wf can be inferred with high accuracy. Here, the second rotation speed Rs2 may be, for example, one-tenth of the first rotation speed Rs1.

[0046] Thus, the plating apparatus 1000 according to the present embodiment can measure the change in the film thickness of the plating film during the plating process. Referring to the change in the film thickness of the plating film thus measured, it is possible to adjust at least one of the plating conditions including the plating current value, the plating time, and the position of the shielding body 470 in the plating process. In addition, the adjustment of the plating conditions can be performed by the user of the plating apparatus 1000 or by the control module 800. As an example, the control module 800 can also adjust the plating conditions based on conditional expressions or programs determined in advance through experiments or the like. The adjustment of the plating conditions can be performed when plating other substrates Wf, or the plating conditions in the current plating process can be adjusted in real time. As an example of the adjustment of the plating conditions, the control module 800 can adjust the advancing and retracting positions of the shielding body 470.

[0047] <Setting of the advancing and retracting motion plan of the shielding body>

[0048] In the plating apparatus 1000 of the present embodiment, the advancing and retracting motions of the shielding position and the retracting position of the shielding body 470 are set by the control module (controller) 800 as the advancing and retracting motion plan. Figure 5 FIG. is a flowchart for explaining an example of a method for setting the advancing and retracting motion plan based on the control module 800. As an example, Figure 5 The advancing and retracting motion plan shown is executed when processing a new substrate lot. In addition, the advancing and retracting motion plan can be set by a computer outside the plating apparatus 1000 instead of being set by the control module 800 of the plating apparatus 1000 and sent to the plating apparatus 1000. Hereinafter, a method for setting the advancing and retracting motion plan based on the control module 800 will be described. In this example, the control module 800 is an example of a "plan setting module".

[0049] First, the control module 800 acquires the resist pattern of the substrate Wf to be processed (step S12). The resist pattern refers to a pattern formed on the resist layer on the surface to be plated Wf-a in such a way that a desired plating pattern is formed through plating treatment. The acquisition of the resist pattern can also be performed by detecting the substrate Wf using a sensor provided in the plating apparatus 1000. As an example, the plating apparatus 1000 may also include a photographing sensor (not shown) such as a camera that photographs the surface to be plated Wf-a of the substrate Wf. Then, the control module 800 may also acquire the photographing data detected by the photographing sensor, analyze the photographing data, and thereby acquire the resist pattern of the surface to be plated Wf-a. The acquisition of the resist pattern from the photographing data can be performed using a known method based on the shadow or feature points of the photographing data. In addition, as another example, the plating apparatus 1000 may include a white confocal sensor configured to detect the surface to be plated Wf-a. Moreover, the control module 800 may acquire the resist pattern of the surface to be plated Wf-a by analyzing the data input from the white confocal sensor. In addition, the detection by the white confocal sensor may be performed along with the rotation of the substrate Wf. Additionally, as an example, the control module 800 may acquire the resist pattern through an external input via wired or wireless communication. In this case, the information representing the resist pattern may be directly input to the control module 800. Alternatively, the control module 800 may acquire the resist pattern by inputting the information associated with the resist pattern such as the above-mentioned photographing data to the control module 800 and analyzing the input information by the control module 800.

[0050] Next, the control module 800 calculates the plating growth coefficient for each specified angular region of the surface to be plated Wf of the substrate Wf based on the acquired resist pattern (step S14). Here, the plating growth coefficient is a parameter representing the growth rate (formation rate) of the plating film in a state where the effect of the shielding body 470 is not considered, in other words, in a state where the shielding body 470 is in the retracted position. In addition, the specified angular region of the surface to be plated Wf refers to a region enclosed by two straight lines connecting the center (rotation center) of the surface to be plated Wf with a central angle of a specified angle to the outer edge and the outer edge therebetween. In other words, when the substrate Wf is circular, it is a sector region with a central angle of a specified angle. As the specified angle, an angle obtained by equally dividing 360° is preferred, and for example, it can be 0.5°, 1°, 2°, several degrees, 10°, etc. The specified angular region may also be a region divided based on an orientation plane, a notch, etc. formed on the substrate Wf.

[0051] As an example, the plating growth coefficient can be the formation amount (e.g., nanometers) of the plating film per unit time (e.g., 1 second). Figure 6 It is a chart showing an example of the plating growth coefficient. In Figure 6In this figure, the vertical axis represents the plating growth coefficient per 1°, and the horizontal axis represents the angular position starting from the reference angle. Additionally, in Figure 6 it is shown that the plating growth coefficient is relatively large in the regions of θ1 to θ4, and particularly large in the region of θ2 to θ3. Figure 7 This is a diagram showing an example of the region of the surface to be plated used for calculating the plating growth coefficient. As an example, the plating growth coefficient can be calculated based on the resist pattern of the region Ap1 for which the plating growth coefficient is to be calculated. As another example, the plating growth coefficient can also be calculated based on the resist pattern of the outer peripheral side region Ap2 of a specified angular region without considering the region close to the center (for example, the region with a radius of half or less). As still another example, the plating growth coefficient can also be calculated based on the resist pattern of a region Ap3a larger than the region Ap3 for which the plating growth coefficient is to be calculated (the region including region Ap3).

[0052] As a specific example, the control module 800 can calculate the opening rate (or opening amount) of the resist layer for each specified angular region based on the resist pattern, and calculate the plating growth coefficient based on the calculated opening rate (or opening amount). This is because in the region where the opening rate of the resist layer is large, the area where the plating accumulates and the plating amount for forming the plating film with a constant amount are large, and there is a tendency for the growth rate of the plating film to be smaller compared to the region where the opening rate of the resist layer is small. However, the control module 800 can also calculate the plating growth coefficient based on other factors such as the length of the edge of the resist layer occupying the specified angular region in addition to the opening rate of the resist layer.

[0053] Furthermore, the plating growth coefficient can also be calculated using a learning model that has learned the correlation between the resist pattern and the plating growth coefficient through machine learning. Figure 8 This is a simplified functional block diagram of the control module 800 in one embodiment. The control module 800 includes: a state variable acquisition unit 852 that acquires a state variable (resist pattern SV1), a storage unit 859 that stores the learning model, and a decision-making unit 858 that outputs (makes a decision) the plating growth coefficient for each specified angular region based on the acquired state variable (resist pattern SV1) and the learning model.

[0054] In the present embodiment, the learning model stored in the storage unit 859 is constructed by the machine learning device. As an example, the plating device 1000 acquires the learning model constructed by machine learning performed by the machine learning device through wire or wireless and stores it in the storage unit 859. In addition, a storage unit 859 pre-storing the learning model constructed by the machine learning device may be mounted on the plating device 1000. Further, in the present embodiment, the machine learning device is shown as a structure different from the control module 800 of the plating device 1000, but the control module 800 may also perform at least part of the functions of the machine learning device. As an example, the machine learning device can be constituted by a microcomputer including a CPU, a memory, etc. and implementing prescribed functions using software. Figure 9 is a brief functional block diagram of the machine learning device in the present embodiment. The machine learning device includes a state variable acquisition unit 902 that acquires state variables (resist pattern SV1, plating growth coefficient SV2) as learning data, and a learning model generation unit 904 that learns and generates a learning model based on the acquired state variables.

[0055] The state variable acquisition unit 902 of the machine learning device acquires the resist pattern SV1 of the substrate Wf and the plating growth coefficient SV2 when plating treatment is performed on the substrate Wf having the resist pattern SV1. The resist pattern SV1 can be acquired by the same method as the acquisition of the resist pattern based on the control module 800 described above. As an example, it can also be acquired by acquiring and analyzing imaging data. The plating growth coefficient SV2 can also be acquired based on a parameter (plated film thickness information) related to the film thickness of the plated film when plating treatment is performed on the substrate Wf having the resist pattern SV1. The plated film thickness information may be a detection value detected by the sensor 460 provided in the plating device 1000, or may be the plated film thickness measured by the control module 800 based on the detection value of the sensor 460. Further, the plated film thickness information may also be the plated film thickness measured in the substrate Wf after the plating treatment is completed. In addition, the plated film thickness information may be information measured when the plating treatment is performed without using the mask 470, or may be information measured when the plating treatment is performed along with the advancing / retreating movement of the mask 470. However, when the plating treatment is performed along with the advancing / retreating movement of the mask 470, it is preferable to acquire information SV3 indicating the advancing / retreating movement plan or movement history of the mask 470 and calculate the plating growth coefficient in consideration of the advancing / retreating movement of the mask 470. Further, the plating growth coefficient SV2 can also be calculated in consideration of other information such as the plating current value and the plating time in addition to the plated film thickness information.

[0056] The learning model generation unit 904 learns a learning model (the correlation between the resist pattern SV1 and the plating growth coefficient SV2) according to any learning algorithm generally known as machine learning. The learning model generation unit 904 repeatedly performs learning based on the state variables (the resist pattern SV1 and the plating growth coefficient SV2) acquired by the state variable acquisition unit 902. The learning model generation unit 904 acquires a plurality of state variables, identifies the characteristics of the state variables to explain the correlation. In addition, the learning model generation unit 904 may also input the resist pattern SV1 and the plating film thickness information into the learning model to perform learning of the learning model of the resist pattern SV1 and the plating growth coefficient.

[0057] Then, the decision-making unit 858 of the control module 800 determines the plating growth coefficient of each specified angular region based on the learning model constructed by machine learning and the resist pattern SV1 acquired by the state variable acquisition unit 852 of the control module 800.

[0058] Refer to Figure 5 , the control module 800 sets the advancing and retracting action plan of the shielding body 470 based on the calculated plating growth coefficient of each specified angular region (step S16). Here, the advancing and retracting action plan of the shielding body 470 is a plan indicating the advancing and retracting positions of the shielding body 470 at each angular position of the substrate Wf. For example, the control module 800 sets the advancing and retracting action plan of the shielding body 470 in such a way that the shielding body 470 is in the shielding position in the region with a larger plating growth coefficient and the shielding body 470 is in the retracted position in the region with a smaller plating growth coefficient. In addition, the control module 800 may also standardize the plating growth coefficient of each specified angular region and set the advancing and retracting action plan of the shielding body 470 based on the standardized plating growth coefficient. Here, as an example, "standardization" means performing a linear transformation with the minimum value as 0 and the maximum value as 1.

[0059] Figure 10 is a diagram showing an example of the advancing and retracting positions of the shielding body at each angular position of the substrate as the advancing and retracting action plan. In addition, in Figure 10 , an example of the advancing and retracting action plan of the shielding body 470 with respect to the substrate Wf having the plating growth coefficient of each specified angular region shown in Figure 6 is shown. In Figure 10 , the vertical axis represents the advancing and retracting position of the shielding body 470, and the horizontal axis represents the angular position starting from the reference angle. In addition, in Figure 10 , for the advancing and retracting position of the shielding body 470, the position where the amount of the shielding body 470 between the substrate Wf and the anode 430 is the largest is set to 100%, and the position where the shielding body 470 retracts from between the substrate Wf and the anode 430 is set to 0%. In addition, in Figure 10In the example shown, an example is shown in which the shielding body 470 can adjust the amount between the substrate Wf and the anode 430.

[0060] The advancing / retreating motion scheme of the shielding body 470 can also be calculated using a learning model that has learned the correlation between the plating growth coefficient and the advancing / retreating motion scheme through machine learning. Refer to Figure 8 , and the decision-making unit 858 of the control module 800 can also output the advancing / retreating motion scheme together with the plating growth coefficient. In this case, in the learning model, the correlation between the resist pattern SV1, the plating growth coefficient SV2, and the advancing / retreating motion scheme SV3 is learned by machine learning. Here, the learning model generation unit 904 can also perform reinforcement learning to learn the learning model. Reinforcement learning is a method of generating a learning model that gives a reward for an action (output) executed with respect to the current state (input) in a certain environment and obtains the maximum reward. As an example of performing reinforcement learning, the learning model generation unit 904 includes an evaluation value calculation unit 905 that calculates an evaluation value based on the state variable SV, and a learning unit 906 that learns the learning model based on the evaluation value. As an example, the evaluation value calculation unit 905 calculates the evaluation value based on the plating process when the shielding body 470 is driven based on the advancing / retreating motion scheme SV3 with respect to the substrate Wf having the resist pattern SV1. Specifically, it can be that the less time required for the plating process of the substrate Wf, the greater the reward is given. In addition, the evaluation value calculation unit 905 can also give a greater reward when the plating growth coefficient SV2 is more constant. Further, the evaluation value calculation unit 905 can also give a greater reward when the uniformity of the plating film formed on the substrate Wf is higher.

[0061] If the advancing / retreating motion scheme of the shielding body 470 is set, the control module (controller) 800 controls the drive mechanism 472 based on the advancing / retreating motion scheme to move the shielding body 470 forward and backward during the plating process of the substrate Wf. Thereby, the uniformity of the plating film formed on the substrate Wf can be improved.

[0062] <Display of plating growth coefficient or advancing / retreating motion scheme of shielding body>

[0063] The control module 800 can also display the plating growth coefficient information indicating the plating growth coefficient calculated based on the resist pattern and / or the information indicating the advancing / retreating motion scheme of the shielding body 470 on the display unit 802 (refer to Figure 2 ). Figure 11 is a diagram showing an example of displaying the plating growth coefficient or the advancing / retreating motion scheme of the shielding body for each specified angular region on the display unit. In Figure 11 the example shown, the substrate pattern Gw of the substrate Wf is displayed. In addition, the plating growth coefficient information or the information indicating the advancing / retreating position of the shielding body 470 is shown corresponding to the angular position in the substrate pattern Gw.

[0064] If we explain the example of plating growth coefficient, then in Figure 11 In the example shown in , Figure 6 The plating growth coefficient shown. For example, in Figure 6 In the example shown in , the plating growth coefficient is small at an angle from 0° to θ1, slightly increases at an angle from θ1 to θ2, and is particularly large at an angle from θ2 to θ3. In order to show such a plating growth coefficient, Figure 11 In the example shown, different colors (hatching) are used to represent the angle from 0° to θ1, the angle from θ1 to θ2, and the angle from θ2 to θ3 in the substrate graphic Gw.

[0065] If we explain the example of the forward and backward position of the shielding body 470 in the same way, then in Figure 11 In the example shown in , Figure 10 The forward and backward action plan shown. For example, in Figure 10 In the example shown in , the shielding body 470 is in the retracted position at an angle from 0° to θ1, the shielding body 470 is slightly interposed between the substrate Wf and the anode 430 at an angle from θ1 to θ2, and the shielding body 470 is interposed between the substrate Wf and the anode 430 to the greatest extent at an angle from θ2 to θ3. In order to show such an advance and retreat action scheme, Figure 11 In the example shown, different colors (hatching) are used to represent the angle from 0° to θ1, the angle from θ1 to θ2, and the angle from θ2 to θ3 in the substrate graphic Gw.

[0066] As an example, the control module 800 can predetermine the relationship between the plating growth coefficient (or the advance and retreat position of the shielding body 470) and the color, and set the color displayed on the display unit 802 based on the relationship and the plating growth coefficient (or the advance and retreat position of the shielding body 470). In addition, the control module 800 can also replace the color or in addition to the color, predetermine the relationship between the plating growth coefficient (or the advance and retreat position of the shielding body 470) and the figure, pattern or text, and set the display of the display unit 802 based on the relationship and the plating growth coefficient (or the advance and retreat position of the shielding body 470). In addition, the control module 800 can also replace the plating growth coefficient and use the plating growth coefficient standardized for each specified angle area to display on the display unit 802. In addition, the control module 800 can also replace Figure 11 shown, or except Figure 11 Except the display shown, use Figure 6 and Figure 10 The graph shown in is displayed on the display unit 802.

[0067] ​​​​In this way, the plating growth coefficient information or the information indicating the advancing / retreating action plan of the shielding body 470 is displayed on the display unit 802, whereby the user can visually and intuitively understand the advancing / retreating action plan of the shielding body 470. In addition, the control module 800 can also accept the user's correction input for the set advancing / retreating action plan. By using the set advancing / retreating action plan to make the shielding body 470 perform the advancing / retreating action, the uniformity of the plating film formed on the substrate Wf can be improved.

[0068] The present invention is also described in the following manner.

[0069] [Mode 1] According to Mode 1, a method is proposed in which an advancing / retreating action plan of the shielding body in a plating apparatus equipped with a shielding body is set in a computer. The shielding body can move to a shielding position between the surface to be plated of the substrate and the anode, and a retreat position where it retreats from between the surface to be plated of the substrate and the anode. The method includes the following steps: obtaining the resist pattern of the substrate; calculating the plating growth coefficient of each specified angular region of the substrate based on the obtained resist pattern; and setting the advancing / retreating action plan of the shielding body based on the calculated plating growth coefficient.

[0070] According to Mode 1, by making the shielding body perform the advancing / retreating action based on the advancing / retreating action plan of the shielding body, the uniformity of the plating film formed on the substrate can be improved.

[0071] [Mode 2] According to Mode 2, on the basis of Mode 1, in the step of obtaining the resist pattern of the substrate, the shooting data of the substrate is obtained and the shooting data is analyzed, whereby the resist pattern of the substrate is obtained.

[0072] According to Mode 2, the advancing / retreating action plan of the shielding body can be set based on the shooting data of the substrate.

[0073] [Mode 3] According to Mode 3, on the basis of Mode 1 or 2, in the step of calculating the plating growth coefficient, based on the resist pattern, the opening ratio of the resist layer in each specified angular region of the substrate is calculated, and the plating growth coefficient is calculated based on the calculated opening ratio.

[0074] According to Mode 3, the plating growth coefficient can be calculated based on the opening ratio of the resist layer.

[0075] [Mode 4] According to Mode 4, on the basis of Modes 1 to 3, it includes the step of displaying, on the display unit, information indicating the advancing / retreating positions of the shielding body at each angular position of the substrate as the advancing / retreating action plan.

[0076] According to Mode 4, the advancing / retreating action plan of the shielding body can be visually and intuitively understood.

[0077] [Method 5] Based on Method 5 and on the basis of Methods 1 to 4, it includes the step of displaying, on the display unit, plating growth coefficient information indicating the plating growth coefficient of each specified angular region of the above-mentioned substrate that has been calculated.

[0078] According to Method 5, it is possible to intuitively understand the advancing and retreating action plan of the shielding body by observing the display of the plating growth coefficient information.

[0079] [Method 6] According to Method 6 and on the basis of Methods 1 to 5, the above-mentioned plating growth coefficient information is information that normalizes the plating growth coefficient of each specified angular region.

[0080] According to Method 6, it is possible to more easily understand the plating growth coefficient.

[0081] [Method 7] According to Method 7 and on the basis of Method 5, in the step of displaying the above-mentioned plating growth coefficient information on the above-mentioned display unit, a substrate pattern of the substrate is displayed, and the above-mentioned plating growth coefficient information is displayed for each specified angular region in the above-mentioned substrate pattern.

[0082] According to Method 7, it is possible to more easily understand the plating growth coefficient.

[0083] [Method 8] According to Method 8 and on the basis of Method 7, as the above-mentioned plating growth coefficient information, a pre-determined graph, pattern, text, color, or a combination thereof with respect to the plating growth coefficient of each specified angular region or the normalized plating growth coefficient of each specified angular region is displayed.

[0084] According to Method 8, it is possible to more easily understand the plating growth coefficient.

[0085] [Method 9] According to Method 9 and on the basis of Methods 1 to 8, it includes the following steps: obtaining, during the plating process, parameters related to the film thickness of the plating film formed on the surface of the substrate to be plated; and inputting the obtained above-mentioned parameters and the above-mentioned resist pattern into a learning model to cause the learning model to learn, and in the step of calculating the above-mentioned plating growth coefficient, inputting the obtained above-mentioned resist pattern into the above-mentioned learning model to calculate the above-mentioned plating growth coefficient.

[0086] According to Method 9, it is possible to set the advancing and retreating action plan of the shielding body by using machine learning.

[0087] [Method 10] According to Method 10, a plating apparatus is provided. The plating apparatus includes: a plating bath; a substrate holder for holding a substrate; an anode disposed in the plating bath so as to face the substrate held by the substrate holder; a shielding body capable of moving between a shielding position between the plating surface of the substrate and the anode and a retracted position retracted from between the plating surface of the substrate and the anode; a scenario setting module that calculates a plating growth coefficient for each specified angular region of the substrate based on the resist pattern of the substrate, and sets an advancing and retracting action scenario for the shielding body based on the calculated plating growth coefficient; and a controller that controls the shielding body based on the advancing and retracting action scenario during the plating process.

[0088] According to Method 10, the uniformity of the plating film formed on the substrate can be improved.

[0089] The embodiments of the present invention have been described above. However, the above-described embodiments of the invention are for easy understanding of the present invention and do not limit the present invention. As an example, the above-described embodiments of the invention can also be applied to a plating apparatus in a so-called dipping method in which the substrate and the anode are vertically arranged. The present invention can be changed and improved without departing from its gist, and it is self-evident that the present invention includes equivalents thereof. In addition, within the scope of being able to solve at least a part of the above problems or achieving at least a part of the effects, the embodiments and the modified examples can be arbitrarily combined, and the respective structural elements described in the claims and the specification can be arbitrarily combined or omitted.

[0090] This application claims priority based on Japanese Patent Application No. 2023-196616 filed on November 20, 2023. All the disclosures including the specification, claims, drawings, and abstract of Japanese Patent Application No. 2023-196616 are incorporated herein by reference in their entirety. All the disclosures including the specification, claims, drawings, and abstract of Japanese Patent Application Laid-Open No. 2005-29863 (Patent Document 1) and Japanese Patent No. 7074937 (Patent Document 2) are incorporated herein by reference in their entirety.

Claims

1. A method for setting in a computer a plan for advancing and retreating a shielding body in a plating device having a shielding body, wherein the shielding body can move to a shielding position between a plated surface of a substrate and an anode and a retreating position retreated from between the plated surface of the substrate and the anode, The method is characterized in that it comprises the following steps: Acquiring a resist pattern of the substrate; Calculating a plating growth coefficient for each specified angle region of the substrate based on the acquired resist pattern; and Based on the calculated plating growth coefficient, the advancing and retreating action plan of the shielding body is set.

2. The method according to claim 1, characterized in that In the step of acquiring the resist pattern of the substrate, imaging data of the substrate is acquired and the imaging data is analyzed, thereby acquiring the resist pattern of the substrate.

3. The method according to claim 1, characterized in that In the step of calculating the plating growth coefficient, an aperture ratio of the resist layer in each predetermined angle region of the substrate is calculated based on the resist pattern, and the plating growth coefficient is calculated based on the calculated aperture ratio.

4. The method according to claim 1, characterized in that: The method includes displaying information indicating the advancing and retreating position of the shielding body at each angular position of the substrate on a display unit as the advancing and retreating action pattern.

5. The method according to claim 1, characterized in that The method includes the step of displaying, on a display unit, plating growth coefficient information indicating the calculated plating growth coefficient for each predetermined angle region of the substrate.

6. The method according to claim 5, characterized in that The plating growth coefficient information is information in which the plating growth coefficient is normalized for each predetermined angle region.

7. The method according to claim 5, characterized in that In the step of displaying the plating growth coefficient information on the display unit, a substrate pattern simulating a substrate is displayed, and the plating growth coefficient information is displayed for each predetermined angle region in the substrate pattern.

8. The method according to claim 7, characterized in that As the plating growth coefficient information, a predetermined figure, pattern, letter, color, or a combination thereof is displayed with respect to the plating growth coefficient for each predetermined angle region or the standardized plating growth coefficient for each predetermined angle region.

9. The method according to any one of claims 1 to 8, characterized in that: The steps include: acquiring a parameter related to a film thickness of a plated film formed on a plated surface of a substrate during a plating process; and The acquired parameters and the resist pattern are input into a learning model to allow the learning model to perform learning, In the step of calculating the plating growth coefficient, the acquired resist pattern is input into the learning model, thereby calculating the plating growth coefficient.

10. A plating device, characterized in that: have: Plating tank; A substrate support, the substrate support is used to hold the substrate; an anode, the anode being arranged in the plating tank so as to face the substrate held by the substrate holder; a shielding body movable to a shielding position between the plated surface of the substrate and the anode and a retreating position retreated from between the plated surface of the substrate and the anode; A scheme setting module, wherein the scheme setting module calculates a plating growth coefficient of each specified angle region of the substrate based on the resist pattern of the substrate, and sets an advance and retreat action scheme of the shielding body based on the calculated plating growth coefficient; as well as A controller controls the shielding body based on the advance and retreat motion scheme during the plating process.

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