Electronic package with recessed terminal
By forming electrically isolated conductive regions on the substrate of the power module and encapsulating the power switch, the problem of high stray inductances in the narrowing contact areas and short creepage distances of signal pins in the prior art is solved, achieving more efficient current flow and lower signal interference.
Patent Information
- Application Number
- CN202411631494.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-11-17
- Filing Date
- 2024-11-15
- Publication Date
- 2025-05-20
AI Technical Summary
In the design of existing power modules, the high stray inductors in the narrower contact area and the creepage distance of the signal pins are short, resulting in inefficiency and signal interference.
Using a substrate with an electrically insulating layer, by forming an electrically isolated conductive region on the electrically insulating layer, and the high-side and low-side power switches are respectively placed on different conductive regions, the power switch and the connector are encapsulated with an insulating encapsulation to form a recess to extend the climbing path of the signal pin.
It effectively reduces stray inductance in the power supply module, improves current flow and switching characteristics, and reduces signal interference and creepage problems.
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Figure CN120021013A_ABST
Abstract
Description
[0001] Related Applications
[0002] This application claims the benefit of priority to U.S. Provisional Patent Application Ser. No. 63 / 600,582, filed on Nov. 17, 2023, entitled "ELECTRONIC PACKAGE WITH RECESSED TERMINALS", the content of which is incorporated herein by reference in its entirety for all purposes. Technical Field
[0003] The described embodiments generally relate to power electronic devices containing one or more semiconductor dies. More specifically, the present embodiments relate to a one-sided direct-cooled power electronic device having semiconductor dies. Background Art
[0004] Currently, there is a wide variety of power modules for power management. A power module may include multiple semiconductor switches. The design of existing power modules may include a narrowed contact area between a direct current (DC) voltage lead frame connection and a power module substrate. Due to the low current flow and high resistance through the contacts, the narrowed contact area may generate high stray inductance. Additionally, a transfer molded power module may include signal pins attached to one side of a molded body of the power module, which may result in a short creepage distance between the signal pins. Summary of the Invention
[0005] In some embodiments, a power module includes a substrate that includes an electrically insulating layer. A first conductive region, a second conductive region, and a third conductive region are each disposed on the electrically insulating layer. The conductive regions are electrically isolated from each other. A plurality of high-side power switches are disposed on the first conductive region and electrically coupled to the first conductive region. A plurality of first connectors are coupled between the plurality of high-side power switches and the second conductive region. A plurality of low-side power switches are disposed on the second conductive region and electrically coupled to the second conductive region. A plurality of second connectors are coupled between the plurality of low-side power switches and the third conductive region. An insulating encapsulant at least partially encapsulates the substrate, the plurality of high-side power switches, the plurality of first connectors, the plurality of low-side power switches, and the plurality of second connectors. The encapsulant defines a plurality of recesses disposed in a bottom surface of the power module. A plurality of conductive pins extend from the bottom surface. Each conductive pin is aligned with a corresponding one of the plurality of recesses.
[0006] In some embodiments, each of the plurality of conductive pins is electrically coupled to the substrate.
[0007] In some embodiments, the power module further includes a plurality of pin holders attached to the substrate.
[0008] In some embodiments, a corresponding one of the plurality of pin holders is aligned with each of the plurality of recesses.
[0009] In some embodiments, each of the plurality of recesses extends from the bottom surface to a respective one of the plurality of pin holders.
[0010] In some embodiments, at least one of the plurality of conductive pins is electrically coupled to the gate terminals of the plurality of high-side power switches, and at least one of the plurality of conductive pins is electrically coupled to the gate terminals of the plurality of low-side power switches.
[0011] In some embodiments, at least one of the plurality of conductive pins is a Kelvin sense terminal for the plurality of high-side power switches, and at least one of the plurality of conductive pins is a Kelvin sense terminal for the plurality of low-side power switches.
[0012] In some embodiments, the plurality of high-side power switches are connected to the plurality of low-side power switches in a half-bridge configuration.
[0013] In some embodiments, each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor.
[0014] In some embodiments, the electronic module includes a substrate that includes an electrically insulating layer. A conductive layer is formed on the electrically insulating layer. The conductive layer defines a first conductive region, a second conductive region, a third conductive region, and a fourth conductive region that are electrically isolated from each other. The plurality of high-side power switches are disposed on the first conductive region and electrically coupled to the first conductive region. The plurality of low-side power switches are disposed on the second conductive region and electrically coupled to the second conductive region. An insulating encapsulant at least partially encapsulates the substrate, the plurality of high-side power switches, and the plurality of low-side power switches. The encapsulant defines a plurality of first recesses and second recesses in the bottom surface of the power module. A first conductive pin extends from the bottom surface and is aligned with the first recess. The first conductive pin is electrically coupled to the third conductive region. A second conductive pin extends from the bottom surface and is aligned with the second recess. The second conductive pin is electrically coupled to the fourth conductive region.
[0015] In some embodiments, the first conductive pin is connected to the gate terminals of the plurality of high-side power switches, and the second conductive pin is connected to the gate terminals of the plurality of low-side power switches.
[0016] In some embodiments, the electronic module further includes a first pin holder and a second pin holder attached to the substrate, the first conductive pin is received within the first pin holder, and the second conductive pin is received within the second pin holder.
[0017] In some embodiments, the first recess extends from the bottom surface to the first pin holder, and the second recess extends from the bottom surface to the second pin holder.
[0018] In some embodiments, the first conductive pin is a Kelvin sense terminal for a plurality of high-side power switches, and the second conductive pin is a Kelvin sense terminal for a plurality of low-side power switches.
[0019] In some embodiments, the plurality of high-side power switches are connected to the plurality of low-side power switches in a half-bridge configuration.
[0020] In some embodiments, a first side of the substrate forms at least a portion of the top surface of the electronic module.
[0021] In some embodiments, each of the plurality of high-side power switches and each of the plurality of low-side power switches of the electronic module are silicon carbide transistors.
[0022] In some embodiments, a method of forming an electronic module includes attaching a plurality of high-side power switches to a first conductive region of a substrate. The substrate includes a first conductive region and a second conductive region that are electrically isolated from each other. The method further includes attaching a plurality of low-side power switches to the second conductive region. Additionally, the method includes at least partially encapsulating the plurality of high-side power switches, the plurality of low-side power switches, and the substrate in an electrically insulating material. The electrically insulating material defines a first recess and a second recess at an outer bottom surface of the electronic module. The method includes inserting a first conductive pin through the first recess and into the substrate such that the first conductive pin is electrically coupled to a gate terminal of each of the high-side power switches. The method further includes inserting a second conductive pin through the second recess and into the substrate such that the second conductive pin is electrically coupled to a gate terminal of each of the low-side power switches.
[0023] In some embodiments, the method further includes attaching a first pin holder and a second pin holder to a surface of the substrate, the first conductive pin being received within the first pin holder, and the second conductive pin being received within the second pin holder.
[0024] In some embodiments, the first recess extends from the outer bottom surface to the first pin holder, and the second recess extends from the outer bottom surface to the second pin holder. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 is a translucent assembled view of a power module;
[0026] Figure 2 is a translucent plan view of a lead frame portion of a power module;
[0027] Figure 3A is a perspective assembled view of the assembled power module;
[0028] Figure 3B is an assembled view of a first cross-section of the assembled power module;
[0029] Figure 3C An assembled view of the second cross-section of the assembled power module;
[0030] Figure 4A An isometric view of the top portion of the assembled power module according to an embodiment of the present disclosure;
[0031] Figure 4B Illustrates Figure 4A A cross-sectional view of a portion of the power module shown in;
[0032] Figure 4C Illustrates as Figure 4B A similar cross-sectional view of the power module shown in;
[0033] Figure 5A A top assembled view of the molded and assembled power module;
[0034] Figure 5B A side assembled view of the molded and assembled power module;
[0035] Figure 5C A top perspective assembled view of the molded and assembled power module without recesses;
[0036] Figure 5D A bottom assembled view of the molded and assembled power module;
[0037] Figure 5E A bottom perspective assembled view of the molded and assembled power module;
[0038] Figure 6A A top assembled view of six groups of direct cooling power assemblies;
[0039] Figure 6B A top perspective assembled view of six groups of direct cooling power assemblies;
[0040] Figure 6C A bottom perspective assembled view of six groups of direct cooling power assemblies;
[0041] Figure 7A A perspective assembled view of the components of six groups of direct cooling modules; and
[0042] Figure 7B A perspective assembled view of six groups of assembled direct cooling modules. Detailed Description of the Invention
[0043] In some embodiments, a high-power AC-to-DC power module includes a lead frame having DC power leads designed to be electrically connected to the power module in a manner that reduces inductance by maximizing the surface area of contact, thereby reducing resistance and increasing current flow. The lead frame may include two positive DC power leads and a negative DC power lead. The negative DC power lead may be wide and include a strip that can make surface contact with multiple metal tabs on the power module. The two positive DC power leads may include tabs that connect to pads on the power module. Each pad may be positioned under the tab of the positive power lead, and the entire top surface of the pad may be in electrical contact with the tab to provide a wide conduction path and reduce inductance. In some embodiments, the power module may be used in an electric vehicle, which includes, but is not limited to, a traction module that provides power to a traction motor, or an AC-to-DC converter that converts AC energy to DC energy for charging one or more batteries.
[0044] The lead frame may also include a pin holder that can receive signal pins after molding. The lead frame may be molded with a recessed mold design that protects and covers the cavity of the pin holder during the molding process. After the molding process, the signal pins may be inserted into the pin holder. The signal pins may be press-fit pins.
[0045] Figure 1 FIG. 7 is a translucent assembly view of a power module 100 according to an embodiment of the present disclosure. The power module 100 may be referred to as an electronic module. The power module 100 includes a substrate 102 in a molded housing 104. A power switch 110 is soldered (or sintered) to the substrate 102. In some embodiments, the power switch 110 is a silicon carbide, gallium nitride, or silicon field effect transistor (FET), and it is soldered to the substrate 102 such that its drain is electrically coupled to the substrate 102. Four low-side power switches 110-1, 110-2, 110-3, and 110-4 are connected in parallel with drain terminals soldered to a substrate region 144. Although Figure 1 four low-side power switches are shown, the power module 100 may include any number of low-side power switches, including a single low-side power switch. Four high-side power switches 110-5, 110-6, 110-7, and 110-8 are connected in parallel with drain terminals soldered to a substrate region 146. Although Figure 1 four high-side power switches are shown, the power module 100 may include any number of high-side power switches, including a single high-side power switch. The substrate regions 144 and 146 are conductive and electrically isolated from each other. In some embodiments, the substrate 102 may be a direct bonded copper (DBC), an insulated metal substrate (IMS), or other suitable high-thermal-conductivity substrate.
[0046] One end of the conductive clip 112 is welded to the top (source electrode) of the power switch 110-1, and the other end of the conductive clip 112 is welded to the substrate region 142. The substrate region 144 may define an opening, and the substrate region 142 may be disposed in the opening. One end of the conductive clip 114 is welded to the top of the power switch 110-2, and the other end of the conductive clip 114 is welded to the substrate region 142. One end of the conductive clip 116 is welded to the top of the power switch 110-3, and the other end of the conductive clip 116 is welded to the substrate region 142. One end of the conductive clip 118 is welded to the top of the power switch 110-4, and the other end of the conductive clip 118 is welded to the substrate region 142. The substrate region 142 is conductive and electrically isolated from the substrate regions 144 and 146. The substrate regions 142, 144, and 146 may be formed on the electrical insulating layer 148.
[0047] One end of the conductive clip 120 is welded to the top (source electrode) of the power switch 110-5, and the other end of the conductive clip 120 is welded to the substrate region 144 (switch node). One end of the conductive clip 122 is welded to the top (source electrode) of the power switch 110-6, and the other end of the conductive clip 122 is welded to the substrate region 144. One end of the conductive clip 124 is welded to the top (source electrode) of the power switch 110-7, and the other end of the conductive clip 124 is welded to the substrate region 144. One end of the conductive clip 126 is welded to the top (source electrode) of the power switch 110-8, and the other end of the conductive clip 126 is welded to the substrate region 144.
[0048] The clips 112, 114, 116, and 118 all have a similar length, such that the lengths of the current paths for current to enter and leave the low-side power switch are equal. The clips 120, 122, 124, and 126 all have a similar length, such that the lengths of the current paths for current to enter and leave the high-side power switch are equal. The sense conductors 128 and 130 serve as Kelvin sense lines for the power switches 110-1 to 110-4. The sense conductors 132 and 134 serve as Kelvin sense lines for the switches 110-5 to 110-8. In some embodiments, the clips are attached first and then the sense lines are attached. The negative temperature coefficient (NTC) thermal sensor 150 is attached to the substrate 102. The conductive clips may be referred to as connectors. For example, the clips 112, 114, 116, and 118 may be referred to as the first connectors or the second connectors. Similarly, the clips 120, 122, 124, and 126 may be referred to as the second connectors or the first connectors.
[0049] In some embodiments, the power module 100 is in a half-bridge configuration or arrangement configuration, although other suitable electrical configurations may be used. The input voltage DC(+) is electrically coupled to the drains of all the high-side power switches 110-5 to 110-8 connected in parallel. The sources of the high-side power switches 110-5 to 110-9 are coupled to the drains of the low-side power switches 110-1 to 110-4 to form a switching node of the substrate region 144. The sources of the low-side power switches 110-1 to 110-4 are coupled to ground DC(-) and are all connected in parallel.
[0050] The input voltage DC(+) power lead ( Figure 2 as shown) may be electrically coupled to the substrate region 146 via the first gasket 162 and the second gasket 161. The first gasket 162 and the second gasket 161 may be formed of a conductive metal, such as copper. The thickness of the first gasket 162 may be equal to, greater than, or less than the thickness of the input voltage DC(+) power lead. Similarly, the thickness of the second gasket 161 may be equal to, greater than, or less than the thickness of the input voltage DC(+) power lead. Although Figure 1 two gaskets are shown, the power module 100 may include any number of gaskets, including a single gasket. The first gasket 162 and the second gasket 161 may be welded between the input voltage DC(+) power lead and the substrate region 146. Figure 1 A rectangular cross-section of the first gasket 162 and the second gasket 161 is shown. The cross-section of the gasket may take any 2-D shape, such as circular, oval, square, hexagonal, etc.
[0051] Figure 2 is a translucent plan view of the lead frame portion of the power module 100 according to an embodiment of the present disclosure. The lead frame uses the right positive power lead 220 and the left positive power lead 240 to connect the substrate 102 of the power module 100 (see Figure 1 ) to the DC(+) voltage. The right positive power lead 220 includes a tab 221 that is connected to the substrate region 146 (see Figure 1 ) via the first gasket 162 (see Figure 1 ). The right positive power lead 220 may be generally planar. The left positive power lead 240 includes a tab 241 that is connected to the substrate region 146 via the second gasket 161 (see Figure 1 ). The left positive power lead 240 may be generally planar. DC(-) is connected to the substrate region 142 (see Figure 1 ) using the negative power lead 230. The negative power lead 230 has a connection to the substrate region 142 (see Figure 1) The formed end 231 of the power supply lead. The current in the DC(+) direction through the positive power supply leads 220, 240 is opposite to the DC(-) current direction through the negative power supply lead 230. The two current paths are extremely close, thereby reducing parasitic / stray inductance. Reducing the parasitic inductance improves the switching characteristics. The output lead 212 is connected to the substrate region 144 (see Figure 1 ). The output lead 212 is connected to the substrate using tabs 212-1 and 212-2.
[0052] Figure 3A Perspective assembly view of the assembled power module 100. The lead frame connects the power module 100 to the DC(+) voltage using the right positive power supply lead 220 and the left positive power supply lead 240. The right positive power supply lead 220 includes a tab 221, and the tab is connected to the substrate region 146 (see Figure 1 , the second gasket 161 is hidden in Figure 3A ) by directly contacting the second gasket 161. The second gasket 161 can be directly below the tab 221, and the entire top surface of the second gasket 161 can be in direct contact with the tab 221, thereby allowing the right positive power supply lead 220 to be substantially planar. The left positive power supply lead 240 includes a tab 241, and the tab is connected to the substrate region 146 (see Figure 1 ) by directly contacting the first gasket 162 (see Figure 1 , the first gasket 162 is partially hidden in Figure 3A ). The first gasket 162 can be directly below the tab 241, and the entire top surface of the first gasket 162 can be in direct contact with the tab 241, thereby allowing the left positive power supply lead 240 to be substantially planar. DC(-) is connected to the substrate region 142 (see Figure 1 ) using the negative power supply lead 230. The negative power supply lead 230 has a formed end 231 that is connected to the substrate region 142 via direct contact with a clip (for simplicity, Figure 1 only marks the clip 112 in Figure 3A ). The current in the DC(+) direction through the positive power supply leads 220, 240 is opposite to the DC(-) current direction through the negative power supply lead 230. The two current paths are extremely close, thereby reducing the parasitic inductance. Reducing the parasitic inductance can improve switching characteristics such as speed, transient control, etc. The output lead 212 is connected to the substrate region 144 (see Figure 1 ). The output lead 212 is connected to the substrate using tabs 212-1 and 212-2. The power module 100 may further include signal pins 236 and a signal pin holder 235. Although in Figure 3AEight signal pins and eight signal pin holders are shown, but for simplicity, only one of each is labeled. The power module 100 may include any number of signal pins and signal pin holders, one of each. The signal pins may be conductive pins, and each signal pin may be electrically coupled to the gate terminals of each of the high-side power switches 110-5, 110-6, 110-7, and 110-8 (see Figure 1 ) or coupled to the gate terminals of each of the low-side power switches 110-1, 110-2, 110-3, and 110-4 (see Figure 1 ). At least one of the signal pins may be a Kelvin sense terminal for the high-side power switches 110-5, 110-6, 110-7, and 110-8, and at least one of the signal pins may be a Kelvin sense terminal for the low-side power switches 110-1, 110-2, 110-3, and 110-4. Although Figure 3A shows two positive power leads and a single negative power lead, the power module 100 may include any number of positive and negative power leads, and the configuration of the power leads may vary. For example, the power module 100 may include a single positive power lead positioned between two negative power leads.
[0053] Figure 3B is an assembled view of a first cross-section of the assembled power module 100. The assembled power module 100 may include a power assembly, which is overmolded (e.g., encapsulated) with an electrically insulating mold material formed as a molded housing 104 (e.g., an insulating encapsulant). The right positive power lead 220 includes a tab 221 that is connected to the substrate region 146 of the substrate 102 by direct contact with the second spacer 161 (see Figure 1 ). A portion of the right positive power lead 220 is outside the molded housing 104. An opening in the molded housing 104 may be formed above the tab 221 to allow a push pin to press down on a multi-layer stack (e.g., substrate 102 plus spacer 161 and tab 221) during a molding process that forms a cavity in contact with the mold flash. After the molding process is complete, the opening may be filled with a molding compound.
[0054] The output lead 212 is connected to the substrate region 144 (see Figure 1 ). The output lead 212 is connected to the substrate 102 using tabs 212-1 (see Figure 2 ) and 212-2. The power module 100 may also include a signal pin 236 and a signal pin holder 235, only one of each being labeled for simplicity. Each signal pin 236 may include a bottom portion covered by the mold housing 104 and a top portion outside the mold housing 104 and above a recess formed in the mold housing.
[0055] Figure 3CIt is an assembled view of the second cross-section of the assembled power module 100. The assembled power module 100 may include a molded housing 104. DC(-) is connected to the substrate region 142 of the substrate 102 using a negative power lead 230 (see Figure 1 ). The negative power lead 230 has a formed end 231, which is connected to the substrate region 142 by direct contact with a clip such as clip 118. A portion of the negative power lead 230 may be located outside the molded housing. One end of the conductive clip 118 is soldered to the top of the power switch 110-4, and the other end of the conductive clip 118 is soldered to the substrate region 142 of the substrate. One end of the conductive clip 126 is soldered to the top (source) of the power switch 110-8, and the other end of the conductive clip 126 is soldered to the substrate region 144 (see Figure 1 ).
[0056] Figure 4A It is an isometric view of the top portion of the assembled power module 100 according to an embodiment of the present disclosure. The power module 100 includes a recessed pin region that provides improved creepage performance between pins, as described in more detail below. As Figure 4A shown, the power module 100 includes a plurality of recesses 238 formed around the signal pins 236 (although Figure 4A shows eight signal pins, only one is labeled for simplicity). Each of the plurality of recesses 238 may be formed at or define the bottom outer surface of the power module 100.
[0057] Figure 4B Illustrates Figure 4A a cross-sectional view of a portion of the power module 100 shown in Figure 4B . As Figure 6B shown, the recesses 238 are aligned with each pin region. For clarity, Figure 6B the pins are not shown. Each recess 238 is aligned with a pin holder 235, which may be a metal structure attached to the substrate 102 by soldering, brazing, gluing, or other suitable means. To form the recesses, the molding tool may include an extension that seals against the pin holder 235 so that the molding compound 104 does not flow into the pin openings 242. The pin holder 235 and the recesses 238 may have any suitable dimensions and may be modified to increase or decrease the creepage distance.
[0058] Figure 4C Illustrates a similar cross-sectional view as Figure 4B shown, however, the pins 236 and the creepage path 244 between adjacent pins 236 are shown in Figure 4C . As Figure 4C shown, the recesses 238 significantly increase the distance of the creepage path 244 compared to a design without the recesses 238.
[0059] Figure 5A This is a top view assembly diagram of the molded and assembled power module 100. The assembly diagram shows the exposed portion of the lead frame, which includes a right positive power lead 220, a left positive power lead 240, a negative power lead 230, and an output lead 212. The top view also shows the molded housing 104 of the assembled power module 100. The molded housing 104 includes two recessed areas 252 and 254. The recessed areas 252 and 254 can be formed during the molding process and are used to seal the pin holder pores so that the mold material does not enter the pores during the molding process. After the molding process, the pins 236 can be inserted into the pin holders. Although Figure 2 several pins 236 are shown in
[0060] Figure 5B This is a side view assembly diagram of the molded and assembled power module 100. The side view also shows the molded housing 104 of the assembled power module 100. The molded housing 104 may include recessed areas. After the molding process, the pins 236 can be inserted into the pin holders.
[0061] Figure 5C This is a top perspective assembly diagram of the molded and assembled power module 100 without recesses according to an embodiment of the present disclosure. In some instances, the molded housing 104 of the power module may not include recesses. After the molding process, the signal pins can be inserted into the openings in the molded housing 104. The openings can have an area similar to the cross-sectional area of the signal pins.
[0062] Figure 5D This is a bottom view assembly diagram of the molded and assembled power module 100. The bottom view assembly diagram shows the exposed portion of the lead frame, which includes a right positive power lead 220, a left positive power lead 240, a negative power lead 230, and an output lead 212. The top view also shows the exposed bottom portion 256 of the substrate 102 of the assembled power module 100 (see Figure 1 ). The exposed bottom portion 256 can be placed in direct contact with a heat sink or a liquid cooling housing (e.g., via a thermal interface material, silver sintering, etc.).
[0063] Figure 5E This is a bottom perspective assembly diagram of the molded and assembled power module 100. The bottom perspective assembly diagram shows the signal pins 236 and the exposed portion of the lead frame and the exposed bottom portion 256 of the substrate 102 of the power module 100 (see Figure 1 ), the lead frame includes a right positive power lead 220, a left positive power lead 240, a negative power lead 230, and an output lead 212.
[0064] Figure 6AIt is a top view assembly diagram of six sets of direct cooling power supply assemblies 600. The six sets of direct cooling power supply assemblies 600 may include three assembled power modules 100 that are positioned side by side and each fastened to a radiator 602. In some examples, the radiator 602 is cooled by liquid or air. Figure 6B and Figure 6C respectively show a top perspective assembly diagram and a bottom perspective assembly diagram of six sets of direct cooling power supply assemblies 600.
[0065] Figure 7A It is a perspective assembly diagram of components of six sets of direct cooling modules 700. The components may include: a liquid cooling housing 750; a DC bus capacitor 760 that is assembled in an open portion of the liquid cooling housing 750; and a power supply assembly 600 that may be fastened to the top portion of the liquid cooling housing 750. The six sets of direct cooling modules 700 may also include a DC busbar 720 that may be attached to portions of the capacitor 760 and the power supply assembly 600. The AC busbar 730 of the six sets of direct cooling modules 700 may be attached to portions of the power supply assembly 600 and the liquid cooling housing 750. The control board 710 may be placed on the upper surface of the six sets of direct cooling modules 700. Figure 7B It is a perspective assembly diagram of the assembled six sets of direct cooling modules 700.
[0066] In some embodiments, switches and / or diodes may be made of gallium nitride (GaN), silicon carbide (SiC), and / or silicon. In various embodiments, one or more of the switches may be field effect switches, including but not limited to enhancement mode and depletion mode switches.
[0067] Those of ordinary skill in the art will understand that within the scope of the present disclosure, various features and aspects of the power module with balanced current can be changed, modified, and manipulated.
[0068] In the foregoing specification, embodiments of the present disclosure have been described with reference to many specific details that may vary for different implementations. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive. The sole and exclusive indicator of the scope of the present disclosure, and what the applicant intends to be the scope of the present disclosure, is the literal and equivalent scope of the set of claims issued in this application, in the specific forms in which those claims are issued, including any subsequent corrections. Without departing from the spirit and scope of the embodiments of the present disclosure, the specific details of the specific embodiments may be combined in any suitable manner.
[0069] Additionally, spatial relative terms such as "bottom" or "top" may be used to describe the relationship of an element and / or feature to another element and / or feature(s), e.g., as depicted in the figures. It will be understood that the spatial relative terms are intended to encompass different orientations of the switch in use and / or operation in addition to the orientation depicted in the figures. For example, if the switch in the figures is flipped, an element described as the "bottom" surface could be oriented "above" other elements or features. The switch may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein are to be interpreted accordingly.
[0070] As used herein, the terms "and", "or", and "and / or" may have multiple meanings, and such meanings are also expected to depend at least in part on the context in which such terms are used. Generally, "or" when used to combine a list (e.g., A, B, or C) is intended to mean A, B, and C herein in the inclusive sense, as well as A, B, or C herein in the exclusive sense. Additionally, the term "one or more" as used herein may be used to describe any feature, structure, or characteristic in the singular, or may be used to describe certain combinations of features, structures, or characteristics. However, it should be noted that this is merely an illustrative example, and the claimed subject matter is not limited to this example. Further, if the term "at least one of" is used to relate a list (e.g., A, B, or C), it can be interpreted to mean any combination of A, B, and / or C, e.g., A, B, C, AB, AC, BC, AA, AAB, ABC, AABBCCC, etc.
[0071] References throughout this specification to "an example", "example", "certain examples", or "exemplary embodiments" mean that a particular feature, structure, or characteristic described in connection with the feature and / or example may be included in at least one feature and / or example of the claimed subject matter. Thus, the appearances of the phrases "in an example", "example", "in certain examples", or "in certain embodiments", or other similar phrases throughout this specification are not necessarily all referring to the same feature, example, and / or limitation. Additionally, the particular features, structures, or characteristics may be combined in one or more examples and / or features.
[0072] In the foregoing detailed description, numerous specific details have been set forth in order to provide a thorough understanding of the claimed subject matter. However, those skilled in the art will understand that the claimed subject matter may be practiced without these specific details. In other instances, methods and devices known to those of ordinary skill in the art have not been described in detail so as not to obscure the claimed subject matter. Accordingly, it is intended that the claimed subject matter not be limited to the specific examples disclosed, but that such claimed subject matter may also include all aspects within the scope of the appended claims and their equivalents.
Claims
1. A power module, comprising: A substrate comprising: Electrical insulation layer; a first conductive region disposed on the electrically insulating layer; a second conductive region disposed on the electrically insulating layer and electrically isolated from the first conductive region; and a third conductive region disposed on the electrically insulating layer and electrically isolated from each of the first conductive region and the second conductive region; a plurality of high-side power switches disposed on and electrically coupled to the first conductive region; a plurality of first connectors electrically coupled between the plurality of high-side power switches and the second conductive region; a plurality of low-side power switches disposed on and electrically coupled to the second conductive region; a plurality of second connectors electrically coupled between the plurality of low-side power switches and the third conductive region; an insulating encapsulation at least partially encapsulating the substrate, the plurality of high-side power switches, the plurality of first connectors, the plurality of low-side power switches, and the plurality of second connectors, the encapsulation defining a plurality of recesses disposed in a bottom surface of the power module; and A plurality of conductive pins extend from the bottom surface, each conductive pin being aligned with a corresponding recess of the plurality of recesses. 2 . The power module of claim 1 , wherein each of the plurality of conductive pins is electrically coupled to the substrate. 3 . The power module of claim 1 , further comprising a plurality of pin holders attached to the substrate. 4 . The power module of claim 3 , wherein a corresponding one of the plurality of pin holders is aligned with each of the plurality of recesses. 5 . The power module of claim 4 , wherein each recess of the plurality of recesses extends from the bottom surface to a corresponding pin holder of the plurality of pin holders.
6. The power module of claim 1 , wherein at least one of the plurality of conductive pins is electrically coupled to a gate terminal of the plurality of high-side power switches, and wherein at least one of the plurality of conductive pins is electrically coupled to a gate terminal of the plurality of low-side power switches.
7. The power module of claim 1 , wherein at least one of the plurality of conductive pins is a Kelvin sense terminal for the plurality of high-side power switches, and wherein at least one of the plurality of conductive pins is a Kelvin sense terminal for the plurality of low-side power switches. 8 . The power module of claim 1 , wherein the plurality of high-side power switches are connected to the plurality of low-side power switches in a half-bridge configuration. 9 . The power module of claim 1 , wherein each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor.
10. An electronic module, comprising: A substrate comprising: Electrical insulation; and a conductive layer formed on the electrically insulating layer and defining a first conductive region, a second conductive region, a third conductive region, and a fourth conductive region, each of which is electrically insulated from one another; a plurality of high-side power switches disposed on and electrically coupled to the first conductive region; a plurality of low-side power switches disposed on and electrically coupled to the second conductive region; an insulating encapsulation at least partially encapsulating the substrate, the plurality of high-side power switches, the plurality of low-side power switches, the encapsulation defining a first recess and a second recess disposed in a bottom surface of the electronic module; and a first conductive pin extending from the bottom surface and aligned within the first recess, the first conductive pin being electrically coupled to the third conductive region; and A second conductive pin extends from the bottom surface and is aligned within the second recess, the second conductive pin being electrically coupled to the fourth conductive region. 11 . The electronic module of claim 10 , wherein the first conductive pin is connected to gate terminals of the plurality of high-side power switches, and wherein the second conductive pin is connected to gate terminals of the plurality of low-side power switches.
12. The electronic module of claim 10, further comprising a first pin holder and a second pin holder attached to the substrate, wherein the first conductive pin is received within the first pin holder, and wherein the second conductive pin is received within the second pin holder. 13 . The electronic module of claim 12 , wherein the first recess extends from the bottom surface to the first pin holder, and wherein the second recess extends from the bottom surface to the second pin holder.
14. The electronic module of claim 10, wherein the first conductive pin is a Kelvin sense terminal for the plurality of high-side power switches, and wherein the second conductive pin is a Kelvin sense terminal for the plurality of low-side power switches. 15 . The electronic module of claim 10 , wherein the plurality of high-side power switches are connected to the plurality of low-side power switches in a half-bridge configuration.
16. The electronic module of claim 10, wherein the first side of the substrate forms at least a portion of a top surface of the electronic module. 17 . The electronic module of claim 10 , wherein each of the plurality of high-side power switches and each of the plurality of low-side power switches is a silicon carbide transistor.
18. A method of forming an electronic module, the method comprising: attaching a plurality of high-side power switches to a first conductive region of a substrate, the substrate comprising a first conductive region and a second conductive region electrically isolated from each other; attaching a plurality of low-side power switches to the second conductive region; encapsulating the plurality of high-side power switches, the plurality of low-side power switches, and the substrate at least partially in an electrically insulating material, the electrically insulating material defining a first recess and a second recess at a bottom exterior surface of the electronic module; inserting a first conductive pin through the first recess and into the substrate such that the first conductive pin is electrically coupled to a gate terminal of each of the high-side power switches; and A second conductive pin is inserted through the second recess and into the substrate such that the second conductive pin is electrically coupled to the gate terminal of each of the low-side power switches.
19. The method of claim 18, further comprising attaching a first pin holder and a second pin holder to a surface of the substrate, wherein the first conductive pin is received within the first pin holder and the second conductive pin is received within the second pin holder.
20. The method of claim 19, wherein the first recess extends from the bottom exterior surface to the first pin holder, and wherein the second recess extends from the bottom exterior surface to the second pin holder.
Citation Information
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