Waveguide device

Abstract

The invention provides a waveguide device. The waveguide device comprises a waveguide structure, an electronic component and a driving circuit, the waveguide structure comprises a first conductor layer, a second conductor layer, an insulating layer and a through hole array. The second conductor layer is disposed over the first conductor layer. The insulating layer is disposed between the first conductor layer and the second conductor layer. The through hole array is arranged in the insulating layer and comprises a plurality of first through holes and at least one second through hole. The plurality of first through-holes are arranged in a first direction and disposed on opposite sides of the insulating layer in a second direction, wherein the first direction intersects the second direction and each first through-hole includes a hollow portion and a conductor portion surrounding the hollow portion. The at least one second through hole is arranged between two adjacent first through holes in the first direction and penetrates through the first conductor layer and the second conductor layer. The electronic component is arranged on the waveguide structure and is electrically connected with the second conductor layer. The driving circuit is arranged below the waveguide structure and is electrically connected with the electronic component through at least one second through hole.

Description

Technical Field

[0001] The present disclosure relates to an electronic device, and particularly to a waveguide device in an electronic device. Background Art

[0002] To improve the communication transmission rate, the frequencies used in wireless communication systems are also increasing day by day. As the wavelength becomes shorter, the microwave signal control elements and antenna elements of the microwave control module in the communication system need to develop towards miniaturization and integration to reduce the transmission loss of microwave signals. However, this means that the electrical isolation between three types of signals, namely microwave signals (such as radio frequency signals), digital signals, and power supply signals, needs to be considered to maintain the normal operation of the microwave control module. To meet the requirements of miniaturizing the module structure and electrical isolation between different signals, a structure with multiple layers of overlapping metal and dielectric materials has emerged. For example, Substrate Integrated Waveguide (SIW) is a waveguide structure for transmitting high-frequency signals, which includes a dielectric layer, metal layers disposed on opposite surfaces of the dielectric layer, and a plurality of through holes penetrating the dielectric layer. The microwave signal wiring layer uses different numbers of microwave signal wiring layers for microwave signal transmission according to the waveguide structure, and the microwave signal control elements usually use conductive through holes to introduce digital signals and power supply signals from the digital signal wiring layer and the power supply wiring layer into the microwave signal wiring layer. However, if the conductive through holes of digital signals and / or power supply signals are arranged within the waveguide structure, they will interfere with the transmission characteristics of microwave signals within the waveguide structure, thereby affecting the antenna radiation characteristics. Summary of the Invention

[0003] The present disclosure provides a waveguide device, which integrates the through holes used to transmit digital signals and / or power supply signals into the through hole array in the waveguide structure for guiding the microwave transmission direction. In this way, not only the electrical connection requirements of digital signals and / or power supply signals can be met, but also the interference caused by the through holes for transmitting digital signals and / or power supply signals outside the through hole array in the waveguide structure to microwave signals can be avoided.

[0004] According to an embodiment of the present disclosure, a waveguide device includes a waveguide structure, an electronic component, and a driving circuit. The waveguide structure includes a first conductor layer, a second conductor layer, an insulating layer, and a via array. The second conductor layer is disposed above the first conductor layer. The insulating layer is disposed between the first conductor layer and the second conductor layer. The via array is disposed in the insulating layer and includes a plurality of first vias and at least one second via. The plurality of first vias are arranged in a first direction and disposed on two opposite sides of the insulating layer in a second direction, wherein the first direction intersects the second direction and each first via includes a hollow portion and a conductor portion surrounding the hollow portion. At least one second via is disposed between two adjacent first vias in the first direction and penetrates through the first conductor layer and the second conductor layer. The electronic component is disposed on the waveguide structure and electrically connected to the second conductor layer. The driving circuit is disposed below the waveguide structure and electrically connected to the electronic component through at least one second via.

[0005] Based on the above, in an embodiment of the present disclosure, the second vias for transmitting digital signals and / or power signals are integrated into the via array for guiding the microwave transmission direction in the waveguide structure. In this way, not only can the electrical connection requirements of digital signals and / or power signals be met, but also the addition of other vias for transmitting digital signals and / or power signals other than the via array in the waveguide structure can be avoided to eliminate the interference generated on the microwave signals.

[0006] To make the above features and advantages of the present disclosure more obvious and understandable, specific embodiments are hereinafter given and described in detail in conjunction with the accompanying drawings as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0008] Figure 1 is a three-dimensional schematic diagram of a waveguide device of an electronic device according to an embodiment of the present disclosure;

[0009] Figure 2A is Figure 1 an exploded schematic diagram of the waveguide device of the electronic device in

[0010] Figure 2B is Figure 2A a cross-sectional schematic diagram taken along line A-A' in

[0011] Figure 3A is an exploded schematic diagram of a waveguide device according to another embodiment of the present disclosure;

[0012] Figure 3B is Figure 3A a cross-sectional schematic diagram taken along line A-A' in

[0013] Figure 4 A top view schematic diagram of a second conductor layer according to an embodiment of the present disclosure;

[0014] Figure 5A A bottom view schematic diagram of a first conductor layer according to an embodiment of the present disclosure;

[0015] Figure 5B is Figure 5A A three-dimensional schematic diagram of an inductance element of [] in an embodiment;

[0016] Figure 6A A bottom view schematic diagram of a first conductor layer according to another embodiment of the present disclosure; and

[0017] Figure 6B is Figure 6A A top view schematic diagram of an inductance element of [] in an embodiment. Detailed implementation manners

[0018] The present disclosure can be understood by referring to the following detailed description and simultaneously combining the accompanying drawings. It should be noted that, for the convenience of the reader's understanding and the simplicity of the drawings, only a part of the package structure is shown in the multiple drawings of the present disclosure, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of the present disclosure. For example, for clarity, the relative dimensions, thicknesses, and positions of each film layer, region, and / or structure may be reduced or enlarged.

[0019] Throughout the specification of the present disclosure and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same element. The present text is not intended to distinguish those elements that have the same function but different names. In the following specification and claims, words such as "having" and "including" are open-ended words, and thus should be interpreted as meaning "including but not limited to...".

[0020] The directional terms mentioned in this document, such as "up", "down", "front", "back", "left", "right", etc., are only with reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustration purposes and not for limiting the present disclosure. It should be understood that when an element or film layer is said to be disposed "on" another element or film layer or "connected" to another element or film layer, the element or film layer may be directly on the other element or film layer or directly connected to the other element or film layer, or there may be intervening elements or film layers between the two (non-direct case). Conversely, when an element or film layer is said to be "directly" on another element or film layer or "directly connected" to another element or film layer, there are no intervening elements or film layers between the two. Additionally, when an element or film layer is said to overlap another element, the element or film layer at least partially overlaps the other element or film layer.

[0021] The terms "about", "approximately", "substantially", or "roughly" mentioned in this document generally represent within 10% of a given value or range, or represent within 5%, 3%, 2%, 1%, or 0.5% of a given value or range. In addition, the phrases "a given range is from a first value to a second value" and "a given range falls within the range from a first value to a second value" mean that the given range includes the first value, the second value, and other values therebetween.

[0022] In some embodiments of the present disclosure, terms related to joining and connecting, such as "connect", "interconnect", etc., unless otherwise specifically defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, with other structures disposed therebetween. Terms related to joining and connecting may also include cases where both structures are movable, or both structures are fixed. In addition, the terms "electrically connected" and "coupled" include any direct and indirect means of electrical connection.

[0023] In the following embodiments, the same or similar elements will be denoted by the same or similar reference numerals, and their descriptions will be omitted. In addition, the features in different embodiments can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with each other, and simple equivalent changes and modifications made according to this specification or the claims still fall within the scope covered by the present disclosure. That is, the following embodiments can replace, reorganize, and mix the technical features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Additionally, the terms "first", "second", etc. mentioned in this specification or the claims are only used to name different elements or distinguish different embodiments or scopes, and do not limit the upper or lower limits of the number of elements, nor are they used to define the manufacturing order or setting order of the elements.

[0024] The electronic device disclosed herein may include an antenna (such as a liquid crystal antenna), display, light emission, sensing, touch, splicing, other suitable functions, or a combination of the above functions, but is not limited thereto. The electronic device includes a rollable or flexible electronic device, but is not limited thereto. The display device may include, for example, liquid crystal, light emitting diode (LED), quantum dot (QD), fluorescence, phosphor, other suitable materials, or a combination of the above. The light emitting diode may include, for example, organic light emitting diode (OLED), micro-LED, mini-LED, or quantum dot light emitting diode (QLED, QDLED), but is not limited thereto. The electronic components may include transistors, circuit boards, chips, dies, integrated circuits (ICs), or a combination of the above components or other suitable electronic components, and are not limited thereto.

[0025] The following exemplifies exemplary embodiments of the present disclosure. The same reference numerals are used in the drawings and the description to represent the same or similar parts.

[0026] Figure 1 is a three-dimensional schematic diagram of a waveguide device of an electronic device according to an embodiment of the present disclosure. Figure 2A is Figure 1 an exploded schematic diagram of the waveguide device of the electronic device in Figure 2B is Figure 2A a cross-sectional schematic diagram taken along line A-A' in Figure 3A is an exploded schematic diagram of a waveguide device according to another embodiment of the present disclosure. Figure 3B is Figure 3A a cross-sectional schematic diagram taken along line A-A' in Figure 4 is a top view schematic diagram of a second conductor layer according to an embodiment of the present disclosure. Figure 5A is a bottom view schematic diagram of a first conductor layer according to an embodiment of the present disclosure. Figure 5B is Figure 5A a three-dimensional schematic diagram of an inductive element in Figure 6A is a bottom view schematic diagram of a first conductor layer according to another embodiment of the present disclosure. Figure 6B is Figure 6A a top view schematic diagram of the inductive element in

[0027] Please refer to Figure 1, Figure 2A and Figure 2B , the waveguide device 10 includes a waveguide structure, an electronic component EC, and a drive circuit DC.

[0028] The waveguide structure includes a first conductor layer M1, a second conductor layer M2 disposed above the first conductor layer M1, an insulating layer IL1 disposed between the first conductor layer M1 and the second conductor layer M2, and a via array disposed in the insulating layer IL. The insulating layer IL1 may include a suitable inorganic and / or organic insulating material. The first conductor layer M1 and the second conductor layer M2 may each include a suitable conductor material. For example, materials with high electrical conductivity such as copper, silver, gold, etc.

[0029] The via array includes a plurality of first vias via1 and at least one second via via2. The first vias via1 are arranged in a first direction and are disposed on opposite sides of the insulating layer IL1 that face each other in a second direction. The first direction intersects the second direction. In some embodiments, the first direction is perpendicular to the second direction. The second via via2 is disposed between two first vias adjacent to each other in the first direction and penetrates through the first conductor layer M1 and the second conductor layer M2. In some embodiments, the distance between the first via via1 and the second via via2 may be less than one quarter of the wavelength of the radio frequency signal propagating inside the waveguide structure. The first conductor layer M1 and the second conductor layer M2 are electrically connected to each other through the conductor portions CP of the respective first vias via1. In some embodiments, the first conductor layer M1 and the second conductor layer M2 are connected to a ground signal.

[0030] In some embodiments, the first via via1 may be a radio frequency signal shielding via. In some embodiments, the first via via1 may be a conformal metal coating via, that is, each first via via1 includes a hollow portion HP and a conductor portion CP surrounding the hollow portion HP, and the conductor portion CP is conformally formed on the sidewall and bottom surface of the via hole in which the first via via1 is formed. In some embodiments, the thickness of the conductor portion CP is higher than the skin depth. The conductor portion CP may comprise and / or be selected from at least one of Al, Ti, Cr, Fe, Co, Ni, Cu, Zn, Pd, Pt, Au, and Ag.

[0031] In some embodiments, the second via via2 can be a via for transmitting DC signals. In some embodiments, the second via via2 can be a fully metal-filled via to reduce the DC power voltage drop (DC IR drop) on the trace for transmitting DC signals. In some embodiments, the second via via2 can be isolated from the first conductor layer M1 by an insulating pattern IP1 disposed in the first conductor layer M1 and surrounding the second via via2. In some embodiments, the second via via2 can be isolated from the second conductor layer M2 by a passivation layer (not shown) disposed in the second conductor layer M2. The insulating pattern IP1 can include suitable inorganic and / or organic insulating materials. The passivation layer can include suitable inorganic and / or organic insulating materials. The second via via2 can comprise and / or be at least one metal selected from Al, Ti, Cr, Fe, Co, Ni, Cu, Zn, Pd, Pt, Au, and Ag.

[0032] An electronic component EC is disposed on the waveguide structure and electrically connected to the second conductor layer M2. In some embodiments, the electronic component EC can include radio frequency components, that is, the electronic component EC can be, for example, an electronic component suitable for the communication field, the radar / LiDAR field, the Reconfigurable Intelligent Surface (RIS) technology, or other suitable fields / technologies, but the present disclosure is not limited thereto. In some embodiments, the electronic component EC can include a variable capacitor, a variable resistor, a varactor diode, a phase shifter, an amplifier, an antenna, a biometric sensor, a graphene sensor, other suitable electronic components, or a combination thereof. Additionally, the electronic component EC can, for example, control the signal transmission direction and / or enhance the directivity of the above-mentioned electronic component by receiving a DC signal from the second via via2, but the present disclosure is not limited thereto.

[0033] A driving circuit DC is disposed below the waveguide structure and electrically connected to the electronic component EC through the second via via2. In some embodiments, the driving circuit DC can include a thin film transistor (TFT). For example, as Figure 2A shown, the waveguide device 10 can include a first passivation layer pass1, a second passivation layer pass2, and a third passivation layer pass3 below the first conductor layer M1, wherein the source / drain S / D of the thin film transistor can be connected to the second via via2 through a signal trace ST2 disposed between the first passivation layer pass1 and the second passivation layer pass2, and the gate G of the thin film transistor can be connected to a gate signal through a signal trace ST3 disposed between the second passivation layer pass2 and the third passivation layer pass3. In other embodiments, as Figure 3AAs shown, the driving circuit DC may include integrated circuits (ICs). For example, the integrated circuit may be a bias voltage control IC, but the integrated circuit of the present disclosure is not limited thereto. In some embodiments, the signal trace ST3 connecting the bias voltage control IC may serve as the input / output trace of the bias voltage control IC. The first passivation layer pass1, the second passivation layer pass2, and the third passivation layer pass3 may each include a suitable inorganic and / or organic insulating material. The signal trace ST2 and the signal trace ST3 may each include a conductor material. For example, the signal trace ST2 and the signal trace ST3 may comprise and / or be at least one metal selected from Al, Ti, Cr, Fe, Co, Ni, Cu, Zn, Pd, Pt, Au, and Ag.

[0034] Based on the above, the second via via2 for transmitting digital signals and / or power signals is integrated into the via array in the waveguide structure for guiding the microwave transmission direction (i.e., at least one of the plurality of first vias via1 is replaced by the second via via2). In this way, not only can the electrical connection requirements of digital signals and / or power signals be met, but also the addition of other vias for transmitting digital signals and / or power signals other than the via array in the waveguide structure can be avoided to eliminate the interference generated on the microwave signal.

[0035] In some embodiments, please refer to Figure 2A , Figure 2B and Figure 4 simultaneously. The waveguide device 10 may further include a signal trace ST1 disposed on the second conductor layer M2 and connecting the electronic component EC and the second via via2. The signal traces ST1 may each include a conductor material. For example, the signal trace ST1 may comprise and / or be at least one metal selected from Al, Ti, Cr, Fe, Co, Ni, Cu, Zn, Pd, Pt, Au, and Ag. In some embodiments, the signal trace ST1 is used to transmit a DC signal and has a relatively high resistance value and / or inductance value compared to the traces for transmitting other signals (such as radio frequency signals, ground signals, or gate signals, etc.). In this way, interference to the radio frequency signal can be avoided when transmitting the DC signal. In this embodiment, the signal trace ST1 may employ a metal with relatively low conductivity (such as ITO, IZO, IGZO, etc.) and / or a metal thickness lower than the skin depth of the lowest operating frequency of the radio frequency signal.

[0036] In some embodiments, please refer to Figure 2A and Figure 2B, the waveguide device 10 may further include signal traces ST2 disposed below the second conductor layer M2 and connecting the driving circuit DC and the second via via2. In some embodiments, the second via via2 is directly electrically connected to the signal trace ST2. The signal traces ST2 may each include a conductive material. For example, the signal traces ST2 may comprise and / or be at least one metal selected from Al, Ti, Cr, Fe, Co, Ni, Cu, Zn, Pd, Pt, Au, and Ag. In some embodiments, the signal traces ST2 are used to transmit DC signals and have a relatively high resistance value and / or inductance value compared to traces for transmitting other signals (such as RF signals, ground signals, or gate signals, etc.), so as to avoid interfering with RF signals when transmitting DC signals. In this embodiment, the signal traces ST2 may employ a metal with relatively low conductivity (such as ITO, IZO, IGZO, etc.) and / or a metal thickness less than the skin depth of the lowest operating frequency of the RF signal.

[0037] In some embodiments, please refer to Figure 5A and Figure 5B , the waveguide device 10 may further include an inductive element D1 disposed under the first conductor layer M1 and electrically connected to the driving circuit DC and the second via via2. The inductive element D1 may be formed by winding the signal trace ST2 (such as the three-dimensional inductive element formed by the winding pattern Figure 5A and Figure 5B shown), so that the signal trace ST2 for transmitting DC signals has a relatively high inductance value compared to traces for transmitting other signals (such as RF signals, ground signals, or gate signals, etc.). For example, the signal trace ST2 may include a bottom trace 102 forming the inductive element D1, a top trace 104 located on the bottom trace 102, and a conductive via 106 connecting the bottom trace 102 and the top trace 104. The signal trace ST2 may further include a trace 108a connecting the inductive element D1 and the second via via2 and a trace 108b connecting the inductive element D1 and the driving circuit DC.

[0038] In some alternative embodiments, please refer to Figure 6A and Figure 6B , the inductive element D1' may be formed by winding the signal trace ST2 (such as the winding pattern formed Figure 6A and Figure 6BThe planar inductive element shown) such that the signal trace ST2 for transmitting DC signals has a higher inductance value compared to the traces for transmitting other signals (such as radio frequency signals, ground signals, or gate signals, etc.). For example, the signal trace ST2 may include the trace pattern 110 that constitutes the inductive element D1'. The signal trace ST2 may also include the trace 112a connecting the inductive element D1' and the second via via2 and the trace 112b connecting the inductive element D1' and the drive circuit DC. In some embodiments, an opening (such as Figure 6A shown) is formed in the first conductor layer M1 above the trace pattern 110 to avoid a decrease in inductance caused by eddy currents. In some embodiments, the above opening may be formed by removing a part of the first conductor layer M1, and the removed size may be less than one quarter of the wavelength of the radio frequency signal propagating inside the waveguide structure.

[0039] In some embodiments, compared to Figure 6A and Figure 6B the planar inductive element D1' shown, Figure 5A and Figure 5B the eddy currents generated by the three-dimensional inductive element D1 shown are smaller than the eddy currents induced by the planar inductive element D1', so the first conductor layer M1 above can maintain a complete plane.

[0040] In some embodiments, please refer to Figure 2A , Figure 2B and Figure 4 simultaneously. The waveguide device 10 may further include a control circuit IC1 (such as Figure 4 shown) disposed on the waveguide structure (such as on the second conductor layer M2 of the waveguide structure) and electrically connected to the electronic component EC, and a radio frequency modulation element RFMC disposed on the waveguide structure (such as on the second conductor layer M2 of the waveguide structure) and electrically connected to the control circuit IC1. In some embodiments, the radio frequency modulation element RFMC may include a varactor.

[0041] Figure 3A and Figure 3B The waveguide device 20 shown is compared with Figure 2A and Figure 2BSimilar to the waveguide device 10 shown, the difference is that: the waveguide device 20 includes a bonding structure BS connecting the first conductor layer M1 and the second conductor layer M2; the second conductor layer M2 of the waveguide device 20 includes an upper portion disposed on the insulating layer IL2 and a lower portion disposed under the insulating layer; the first via via1 of the waveguide device 20 includes a portion disposed in the insulating layer IL2 to connect the upper and lower portions of the second conductor layer M2; and the waveguide device 20 replaces the first passivation layer pass1 of the waveguide device 10 with a substrate SUB. In some embodiments, the first via via1 of the waveguide device 20 may further include a bonding structure BS connected to the first conductor layer M1.

[0042] In this embodiment, the bonding structure BS of the waveguide device 20 is disposed between the insulating layer IL2 and the first conductor layer M1. In some embodiments, the portion of the second via via2 above the first conductor layer M1 is electrically connected to the signal trace ST2 below through the bonding structure BS. In some embodiments, the portion of the second via via2 below the first conductor layer M1 is electrically connected to the signal trace ST1 above through the bonding structure BS. In some embodiments, the first conductor layer M1 and the second conductor layer M2 are electrically connected to each other through the conductor portion CP of each first via via and the bonding structure BS.

[0043] In some embodiments, the bonding structure BS may include a pad BP1, a pad BP2, and a connection member BM disposed between the pad BP1 and the pad BP2. The pad BP1 and the pad BP2 may each include a conductive material such as metal. For example, the metal may be Al, Ti, Cr, Fe, Co, Ni, Cu, Zn, Pd, Pt, Au, Ag, their alloys, or combinations thereof. The connection member BM may include a conductive material of metals such as Sn, Pb, etc. In some embodiments, the connection member BM may be a solder ball.

[0044] In some embodiments, the substrate SUB may be made of any material suitable as the substrate SUB.

[0045] In summary, in the embodiments of the present disclosure, the second via via2 for transmitting digital signals and / or power signals is integrated into the via array for guiding the microwave transmission direction in the waveguide structure (i.e., at least one of the plurality of first vias via1 is replaced by the second via via2). In this way, not only can the electrical connection requirements of digital signals and / or power signals be met, but also the addition of other vias for transmitting digital signals and / or power signals other than the via array in the waveguide structure can be avoided to eliminate the interference generated to the microwave signal.

[0046] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the various embodiments of the present disclosure. As long as the features between the embodiments do not violate the inventive spirit or conflict with each other, they can be arbitrarily mixed and used.

[0047] Although the embodiments of the present disclosure and their advantages have been disclosed above, it should be understood that those skilled in the art can make changes, substitutions and refinements without departing from the spirit and scope of the present disclosure, and the features between the embodiments can be arbitrarily mixed and replaced to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufactures, compositions of matter, devices, methods and steps in the specific embodiments described in the specification. Those skilled in the art can understand from the disclosure of the present disclosure the processes, machines, manufactures, compositions of matter, devices, methods and steps developed in the present or in the future. As long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to the present disclosure. Therefore, the protection scope of the present disclosure includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the present disclosure also includes the combination of each claim and embodiment. The protection scope of the present disclosure shall be determined by the scope defined by the appended claims.

Claims

1. A waveguide device, characterized in that: include: Waveguide structure, including: a first conductor layer; A second conductor layer, disposed above the first conductor layer; an insulating layer disposed between the first conductor layer and the second conductor layer; and A through hole array is disposed in the insulating layer and comprises: a plurality of first through holes arranged in a first direction and disposed on two sides of the insulating layer opposite to each other in a second direction, wherein the first direction intersects the second direction and each of the first through holes includes a hollow portion and a conductor portion surrounding the hollow portion; and at least one second through hole, disposed between two of the first through holes adjacent to each other in the first direction and penetrating the first conductor layer and the second conductor layer; an electronic component, disposed on the waveguide structure and electrically connected to the second conductor layer; and The driving circuit is arranged below the waveguide structure and is electrically connected to the electronic component through the at least one second through hole.

2. The waveguide device according to claim 1, characterized in that Also includes: The first signal trace is disposed on the second conductor layer and connects the electronic component and the at least one second through hole, wherein the first signal trace is used to transmit a DC signal and has a higher resistance and / or inductance than traces used to transmit other signals.

3. The waveguide device according to claim 2, characterized in that Also includes: A second signal trace is disposed below the second conductor layer and connects the drive circuit and the at least one second through hole, wherein the second signal trace is used to transmit the DC signal and has a higher resistance and / or inductance than the trace used to transmit the other signals.

4. The waveguide device according to claim 3, characterized in that The at least one second through hole is directly electrically connected to the second signal trace.

5. The waveguide device according to claim 3, characterized in that Also includes: A bonding structure is disposed between the insulating layer and the first conductor layer, wherein the at least one second through hole and the second signal trace are electrically connected through the bonding structure.

6. The waveguide device according to claim 5, characterized in that The first conductor layer and the second conductor layer are electrically connected to each other through the conductor portion of each of the first through holes and the bonding structure.

7. The waveguide device according to claim 1, characterized in that The first conductor layer and the second conductor layer are electrically connected to each other through the conductor portion of each of the first through holes.

8. The waveguide device according to claim 1, characterized in that The driving circuit includes a thin film transistor.

9. The waveguide device according to claim 1, characterized in that The driving circuit includes an integrated circuit.

10. The waveguide device according to claim 1, characterized in that Also includes: A control circuit, disposed on the waveguide structure and electrically connected to the electronic component; as well as The radio frequency modulation element is disposed on the waveguide structure and is electrically connected to the control circuit.

11. The waveguide device according to claim 10, characterized in that The radio frequency modulation element includes a varactor diode.

12. The waveguide device according to claim 1, characterized in that Also includes: The inductor element is disposed below the first conductor layer and is electrically connected to the driving circuit and the at least one second through hole.

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