Air inlet top tray capable of regulating and controlling temperature of reaction cavity

Abstract

The invention relates to an air inlet top tray capable of regulating and controlling the temperature of a reaction cavity, and belongs to the technical field of vapor deposition equipment. Comprising an inner disc, at least one connecting disc and an outer disc, the inner disc is arranged in the first connecting disc in a sleeved mode and detachably connected with the first connecting disc, the adjacent connecting discs are sequentially arranged in a sleeved mode and detachably connected, and the outer disc is arranged on the periphery of the outermost connecting disc in a sleeved mode and detachably connected with the outermost connecting disc. A plurality of jet flow holes are formed in the inner disc, the at least one connecting disc and the outer disc in a penetrating manner; the inner disc, the at least one connecting disc and the outer disc have different emissivity and / or thermal conductivity. Different discs have different emissivity and thermal conductivity, the temperature condition in the reaction cavity can be effectively adjusted, the uniformity of a temperature field is improved, and then the uniformity of the growth thickness of an AlN film is improved. Different discs are detachably connected, so that the air inlet top disc is convenient to assemble and clean.

Description

Technical Field

[0001] The invention relates to the technical field of vapor deposition equipment, and in particular to an air intake top plate capable of regulating the temperature of a reaction chamber. Background Art

[0002] In the preparation process of ultraviolet LED chips, due to the influence of factors such as material quality and doping during epitaxy, as well as the difficulties in chip and packaging processes, high aluminum nitride technology lags seriously behind the development of indium gallium nitrogen blue-green light technology. The most prominent problem is that the use of commercial blue-green light MOCVD (Metal-organic Chemical Vapor Deposition) equipment cannot well inhibit the pre-reaction, which will lead to a decrease in material quality and high resource consumption. Therefore, the dedicated MOCVD equipment used to manufacture ultraviolet LEDs has become an important link restricting the development of the ultraviolet LED chip industry.

[0003] A difficult problem encountered when manufacturing MOCVD equipment for UV LEDs is how to make the AlN thin film substrate grow uniformly enough to provide a basis for subsequent material growth. In the MOCVD reactor, a complex transport process is carried out. In the main process of MOCVD growth of AlN, the source gas TMAl and the group III gas NH 3 In the carrier gas H 2 It is carried into the reactor and first reaches the boundary layer of the reactor (flow rate, temperature and concentration boundary layer). The transported substances are activated in the boundary layer (high temperature, collision), and gas-phase chemical reactions occur (pyrolysis reaction, addition reaction, etc.), generating reaction precursors and harmful nanoparticles that provide film growth. The reaction precursors for film growth in the substances produced by the gas-phase chemical reaction reach the surface of the high-temperature substrate through diffusion, and complete the AlN film deposition growth through surface reaction through adsorption and diffusion. However, these reaction precursors will also desorb from the substrate under extreme conditions (high temperature, high pressure) after adsorption. The remaining source gas, desorbed particles and nanoparticles in the reactor will eventually be discharged from the reactor along with the main gas flow under the action of thermal force. Mass transfer and gas-phase chemical reactions are inseparable, and the two work together to affect film growth.

[0004] The growth process of AlN thin film is mainly affected by three main factors: flow field, temperature field and chemical reaction. In the existing MOCVD equipment, the cavity temperature field cannot be locally fine-tuned, so as to better control the temperature field distribution and improve the uniformity of film growth. The path and degree of chemical reaction will be affected by the temperature field of the reaction cavity. Therefore, how to better control the temperature field distribution of the reaction cavity is an important way to improve the uniformity of AlN film growth. However, the existing MOCVD equipment has limited ways to control the temperature field of the reaction cavity. Specifically, the structure of the temperature field control equipment of the existing reaction cavity is fixed and cannot be freely replaced and combined according to actual needs. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides an air intake top plate capable of regulating the temperature of a reaction chamber. The technical solution of the present invention is as follows:

[0006] An air intake top plate capable of regulating the temperature of a reaction chamber, comprising an inner plate, at least one connecting plate and an outer plate, wherein the inner plate is sleeved in a first connecting plate and is detachably connected to the first connecting plate, adjacent connecting plates are sleeved in sequence and are detachably connected, and the outer plate is sleeved around the outermost connecting plate and is detachably connected to the outermost connecting plate, and a plurality of jet holes are penetrated through the inner plate, at least one connecting plate and the outer plate;

[0007] The inner disk, the at least one connecting disk and the outer disk have different emissivities and / or thermal conductivities.

[0008] Optionally, the inner disk is shaped as a boss cylinder, including an upper boss cylinder and a lower boss cylinder, the upper boss cylinder and the lower boss cylinder are coaxially arranged, the top surface of the lower boss cylinder is fixedly connected to the bottom surface of the upper boss cylinder, the diameter of the upper boss cylinder is larger than the diameter of the lower boss cylinder, and a plurality of penetrating first jet holes are provided on the boss cylinder.

[0009] Optionally, the connecting disk is shaped as an offset cylindrical ring, including a first upper cylindrical ring and a first lower cylindrical ring, the first upper cylindrical ring and the first lower cylindrical ring are coaxially arranged, the top surface of the first lower cylindrical ring is fixedly connected to the bottom surface of the first upper cylindrical ring, the outer diameter of the first lower cylindrical ring is between the inner diameter and the outer diameter of the first upper cylindrical ring, the inner diameter of the first upper cylindrical ring is larger than the inner diameter of the first lower cylindrical ring, a plurality of penetrating second jet holes are provided on the offset cylindrical ring, and the inner disk is sleeved between the inner diameters of the first upper cylindrical ring and the first lower cylindrical ring.

[0010] Optionally, the outer disk is shaped as a first boss cylindrical ring, including a second upper cylindrical ring and a second lower cylindrical ring, the second upper cylindrical ring and the second lower cylindrical ring are coaxially arranged, the top surface of the second lower cylindrical ring is fixedly connected to the bottom surface of the second upper cylindrical ring, the inner diameter of the second upper cylindrical ring is larger than the inner diameter of the second lower cylindrical ring, the outer diameter of the second upper cylindrical ring is equal to the outer diameter of the second lower cylindrical ring, a plurality of third jet holes are penetrated through the first boss cylindrical ring, and the connecting disk is sleeved between the inner diameters of the second upper cylindrical ring and the second lower cylindrical ring.

[0011] Optionally, a first limiting protrusion is fixedly connected to the edge of the cylinder on the boss, a first limiting groove adapted to the first limiting protrusion is provided on the inner edge of the first upper cylindrical ring, a second limiting protrusion is fixedly connected to the outer edge of the first upper cylindrical ring, a second limiting groove adapted to the second limiting protrusion is provided on the inner edge of the second upper cylindrical ring, and a third limiting protrusion is fixedly connected to the outer edge of the second lower cylindrical ring.

[0012] Optionally, the outer disk is sleeved in the reaction chamber disk body and is detachably connected to the reaction chamber disk body. The reaction chamber disk body is in the shape of a second boss cylindrical ring, including a third upper cylindrical ring and a third lower cylindrical ring. The third upper cylindrical ring and the third lower cylindrical ring are coaxially arranged, the top surface of the third lower cylindrical ring is fixedly connected to the bottom surface of the third upper cylindrical ring, the inner diameter of the third upper cylindrical ring is larger than the inner diameter of the third lower cylindrical ring, the outer diameter of the third upper cylindrical ring is equal to the outer diameter of the third lower cylindrical ring, and the outer disk is sleeved between the inner diameters of the third upper cylindrical rings.

[0013] Optionally, a third limiting groove matched with the third limiting protrusion is provided on the outer edge of the third upper cylindrical ring.

[0014] Optionally, the bottom surface of the inner disk and the bottom surface of the connecting disk are coated with nickel coatings of different thicknesses, and the bottom surface of the outer disk is coated with tantalum carbide coating.

[0015] Optionally, the thickness of the nickel coating coated on the bottom surface of the inner disk is smaller than the thickness of the nickel coating coated on the bottom surface of the connecting disk, and the thickness of the tantalum carbide coating coated on the bottom surface of the outer disk is larger than the thickness of the nickel coating coated on the bottom surface of the connecting disk.

[0016] Optionally, the bottom surface of the inner disk is coated with a nickel coating of 50 microns thick, the bottom surface of the connecting disk is coated with a nickel coating of 80 microns thick, and the bottom surface of the outer disk is coated with a tantalum carbide coating of 100 microns thick.

[0017] All the above optional technical solutions can be combined arbitrarily, and the present invention does not provide detailed descriptions of the structures after the combinations.

[0018] By means of the above scheme, the beneficial effects of the present invention are as follows:

[0019] By providing an inner disk, at least one connecting disk and an outer disk, and arranging them to be mutually nested and detachably connected, and arranging the inner disk, at least one connecting disk and the outer disk to have different emissivities and / or thermal conductivities, different disks have different emissivities and thermal conductivities, so that they can be freely combined or replaced as needed, thereby effectively adjusting the temperature conditions in the reaction chamber, improving the uniformity of the temperature field, and thereby improving the uniformity of the thickness of the AlN film growth. By arranging detachable connections between different disks, the assembly and cleaning of the air intake top disk is facilitated.

[0020] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a three-dimensional structural schematic diagram of the present invention.

[0022] Figure 2 It is a schematic diagram of the decomposition structure of the present invention.

[0023] Figure 3 It is a cross-sectional view of the present invention.

[0024] Figure 4 It is a three-dimensional diagram of the inner dish in the present invention.

[0025] Figure 5 It is a cross-sectional view of the inner disk in the present invention.

[0026] Figure 6 It is a three-dimensional diagram of the connection disk in the present invention.

[0027] Figure 7 It is a cross-sectional view of the connection disk in the present invention.

[0028] Figure 8 It is a three-dimensional diagram of the outer plate in the present invention.

[0029] Fig. 9 It is a cross-sectional view of the outer disk in the present invention.

[0030] Fig.10 It is a three-dimensional diagram of the reaction chamber disc in the present invention.

[0031] Fig.11 It is a cross-sectional view of a reaction chamber formed by combining an air intake top plate and a reaction chamber plate body in the present invention.

[0032] Fig.12 It is a simulation diagram of the temperature field distribution of the reaction chamber in the prior art.

[0033] Fig.13 It is a simulation diagram of the thickness distribution of the AlN film formed by the prior art.

[0034] Fig.14 It is a simulation diagram of the temperature field distribution of the reaction chamber of the present invention.

[0035] Fig.15 It is a simulation diagram of the thickness distribution of the AlN film formed by the present invention.

[0036] The accompanying drawings are marked as follows: 1-inner disk, 11-cylinder on the boss, 12-cylinder under the boss, 13-first jet hole, 14-first limiting protrusion, 2-connecting disk, 21-first upper cylindrical ring, 22-first lower cylindrical ring, 23-second jet hole, 24-first limiting slot, 25-second limiting protrusion, 3-outer disk, 31-second upper cylindrical ring, 32-second lower cylindrical ring, 33-third jet hole, 34-second limiting slot, 35-third limiting protrusion, 4-reaction chamber disk, 41-third upper cylindrical ring, 42-third lower cylindrical ring, 43-third limiting slot. DETAILED DESCRIPTION

[0037] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0038] like Figures 1 to 3 As shown, an air intake top plate with adjustable reaction chamber temperature provided by an embodiment of the present invention comprises an inner plate 1, at least one connecting plate 2 and an outer plate 3, wherein the inner plate 1 is sleeved in the first connecting plate 2 and is detachably connected to the first connecting plate 2, the adjacent connecting plates 2 are sleeved in sequence and are detachably connected, and the outer plate 3 is sleeved on the periphery of the outermost connecting plate 2 and is detachably connected to the outermost connecting plate 2; a plurality of jet holes are penetrated through the inner plate 1, the at least one connecting plate 2 and the outer plate 3; the inner plate 1, the at least one connecting plate 2 and the outer plate 3 have different emissivities and / or thermal conductivities.

[0039] Among them, the materials of the inner disk 1, the connecting disk 2 and the outer disk 3 are all metal materials.

[0040] If the air intake top plate provided by the embodiment of the present invention includes only one connection plate 2, during assembly, the inner plate 1 is placed inside the connection plate 2, and the outer plate 3 is sleeved outside the connection plate 2. If at least two connection plates 2 are included, during assembly, the inner plate 1 is placed inside the first connection plate 2, the adjacent connection plates 2 are sleeved in sequence, and then the outer plate 3 is sleeved outside the outermost connection plate 2.

[0041] When disassembling the air intake top plate provided by the embodiment of the present invention, first, the inner plate 1 is taken out from the connecting plate 2; then, a single or multiple connecting plates 2 are taken out; and finally, the outer plate 3 is taken out.

[0042] Specifically, the air intake top plate provided in the embodiment of the present invention can be achieved by spraying different coatings on the inner plate 1, the connecting plate 2 and the outer plate 3 when having different emissivities and / or thermal conductivities. Specifically, it can be achieved by setting different coating materials and / or coating thicknesses, thereby changing the emissivity and thermal conductivity of the wall of the air intake top plate, thereby affecting the temperature distribution of the reaction chamber space formed by the air intake top plate and the reaction chamber plate body, thereby achieving temperature controllability.

[0043] In specific implementation, the number of connecting plates 2 can be freely selected as needed, and the free combination and replacement of the inner plate 1, the connecting plate 2 and the outer plate 3 can be realized. Through different combinations, the local fine adjustment of the temperature field in the MOCVD reaction chamber can be realized, thereby changing the temperature field distribution of the reaction chamber, adjusting the degree of chemical reaction, and improving the growth uniformity of the AlN film. At the same time, the air inlet top plate provided in the embodiment of the present invention can arrange different spray ports for different plates, so as to facilitate the regulation of the spatial velocity field and concentration field distribution of the reaction chamber.

[0044] In summary, the embodiment of the present invention divides the air intake top plate into different blocks and sets them to have different emissivities and / or thermal conductivities, which not only realizes the controllable temperature field, but also facilitates assembly and disassembly, and can be well cleaned and descaled, which greatly facilitates the cleaning of the air intake top plate and is beneficial to equipment maintenance.

[0045] It should be noted that the embodiments of the present invention do not impose any specific restrictions on the shapes of the inner disk 1, the connecting disk 2 and the outer disk 3, as long as they can be tightly fitted after assembly and can be easily disassembled.

[0046] In a specific embodiment, Figure 4 and Figure 5 As shown, the inner disk 1 is in the shape of a boss cylinder, including a boss upper cylinder 11 and a boss lower cylinder 12, the boss upper cylinder 11 and the boss lower cylinder 12 are coaxially arranged, the top surface of the boss lower cylinder 12 is fixedly connected to the bottom surface of the boss upper cylinder 11, the diameter of the boss upper cylinder 11 is greater than the diameter of the boss lower cylinder 12, and the boss cylinder is provided with a plurality of first jet holes 13 that penetrate therethrough. Specifically, the boss upper cylinder 11 and the boss lower cylinder 12 are integrally formed.

[0047] In a specific embodiment, Figure 6 and Figure 7As shown, the connecting disk 2 is in the shape of an offset cylindrical ring, including a first upper cylindrical ring 21 and a first lower cylindrical ring 22. The first upper cylindrical ring 21 and the first lower cylindrical ring 22 are coaxially arranged, and the top surface of the first lower cylindrical ring 22 is fixedly connected to the bottom surface of the first upper cylindrical ring 21. The outer diameter of the first lower cylindrical ring 22 is between the inner diameter and the outer diameter of the first upper cylindrical ring 21. The inner diameter of the first upper cylindrical ring 21 is larger than the inner diameter of the first lower cylindrical ring 22. A plurality of penetrating second jet holes 23 are provided on the offset cylindrical ring. The inner disk 1 is sleeved between the inner diameters of the first upper cylindrical ring 21 and the first lower cylindrical ring 22. The first upper cylindrical ring 21 and the first lower cylindrical ring 22 are integrally formed.

[0048] Specifically, during the sleeve installation, the upper cylinder 11 on the boss and the lower cylinder 12 on the boss are respectively sleeved in the inner diameters of the first upper cylindrical ring 21 and the first lower cylindrical ring 22, the diameter of the upper cylinder 11 on the boss matches the inner diameter of the first upper cylindrical ring 21, and the diameter of the lower cylinder 12 on the boss matches the inner diameter of the first lower cylindrical ring 22, so that the inner disk 1 and the connecting disk 2 are tightly fitted with each other.

[0049] In a specific embodiment, Figure 8 and Fig. 9 As shown, the outer disk 3 is in the shape of a first boss cylindrical ring, including a second upper cylindrical ring 31 and a second lower cylindrical ring 32, the second upper cylindrical ring 31 and the second lower cylindrical ring 32 are coaxially arranged, the top surface of the second lower cylindrical ring 32 is fixedly connected to the bottom surface of the second upper cylindrical ring 31, the inner diameter of the second upper cylindrical ring 31 is greater than the inner diameter of the second lower cylindrical ring 32, the outer diameter of the second upper cylindrical ring 31 is equal to the outer diameter of the second lower cylindrical ring 32, the first boss cylindrical ring is provided with a plurality of third jet holes 33 penetrating therethrough, and the connecting disk 2 is sleeved between the inner diameters of the second upper cylindrical ring 31 and the second lower cylindrical ring 32. Specifically, the second upper cylindrical ring 31 and the second lower cylindrical ring 32 are integrally formed.

[0050] Specifically, during sleeve installation, the first upper cylindrical ring 21 and the first lower cylindrical ring 22 are respectively sleeved in the inner diameters of the second upper cylindrical ring 31 and the second lower cylindrical ring 32, the outer diameter of the first upper cylindrical ring 21 matches the inner diameter of the second upper cylindrical ring 31, and the outer diameter of the first lower cylindrical ring 22 matches the inner diameter of the second lower cylindrical ring 32, so that the connecting disk 2 and the outer disk 3 are tightly fitted.

[0051] In a specific embodiment, Figures 1 to 9As shown, the edge of the upper cylinder 11 on the boss is fixedly connected with a first limiting protrusion 14, the inner edge of the first upper cylindrical ring 21 is provided with a first limiting groove 24 adapted to the first limiting protrusion 14, the outer edge of the first upper cylindrical ring 21 is fixedly connected with a second limiting protrusion 25, the inner edge of the second upper cylindrical ring 31 is provided with a second limiting groove 34 adapted to the second limiting protrusion 25, and the outer edge of the second lower cylindrical ring 32 is fixedly connected with a third limiting protrusion 35. Specifically, the first limiting protrusion 14 is integrally formed with the upper cylinder 11 on the boss. The second limiting protrusion 25 is integrally formed with the first upper cylindrical ring 21. The third limiting protrusion 35 is integrally formed with the second lower cylindrical ring 32.

[0052] Based on this structure, during assembly, the embodiment of the present invention can realize rapid assembly of the air intake top plate by clamping the first limiting protrusion 14 in the first limiting groove 24 and clamping the second limiting protrusion 25 in the second limiting groove 34 .

[0053] It should be noted that the shapes of the first limiting protrusion 14, the second limiting protrusion 25 and the third limiting protrusion 35, and the shapes of the first limiting slot 24 and the second limiting slot 34 can be set in many ways, and the figures only take these protrusions and grooves as square as an example for illustration. However, in specific implementation, they can be set to circular, semicircular, arc, triangular, etc. as needed.

[0054] In a specific embodiment, Figures 1 to 3 and Fig.10 and Fig.11 As shown, the outer disk 3 is sleeved in the reaction chamber disk body 4 and is detachably connected to the reaction chamber disk body 4. The reaction chamber disk body 4 is in the shape of a second boss cylindrical ring, including a third upper cylindrical ring 41 and a third lower cylindrical ring 42. The third upper cylindrical ring 41 and the third lower cylindrical ring 42 are coaxially arranged, the top surface of the third lower cylindrical ring 42 is fixedly connected to the bottom surface of the third upper cylindrical ring 41, the inner diameter of the third upper cylindrical ring 41 is greater than the inner diameter of the third lower cylindrical ring 42, the outer diameter of the third upper cylindrical ring 41 is equal to the outer diameter of the third lower cylindrical ring 42, and the outer disk 3 is sleeved between the inner diameters of the third upper cylindrical ring 41. Specifically, the third upper cylindrical ring 41 and the third lower cylindrical ring 42 are integrally formed.

[0055] Specifically, during assembly, the second upper cylindrical ring 31 and the second lower cylindrical ring 32 are respectively sleeved in the inner diameter of the third upper cylindrical ring 41, and the outer diameters of the second upper cylindrical ring 31 and the second lower cylindrical ring 32 match the inner diameter of the third upper cylindrical ring 41, so that the outer disk 3 and the reaction chamber disk body 4 are tightly fitted, thereby forming a reaction chamber.

[0056] In a specific embodiment, Fig.10As shown, the outer edge of the third upper cylindrical ring 41 is provided with a third limiting groove 43 adapted to the third limiting protrusion 35. During assembly, the third limiting protrusion 35 is clamped in the third limiting groove 43, so that the outer disk 3 and the reaction chamber disk body 4 can be quickly assembled.

[0057] When the air intake top plate provided in this embodiment is installed with the reaction chamber plate body 4, Figure 1 and Figure 2 As shown, first, the third limiting protrusion 35 of the outer disk 3 is placed in the third limiting groove 43 of the reaction chamber disk body 4; then the second limiting protrusion 25 of the connecting disk 2 is placed in the second limiting groove 34 of the outer disk 3; if there are multiple connecting disks 2, the second limiting protrusion 25 of one connecting disk 2 is placed in the first limiting groove 24 of another connecting disk 2; finally, the first limiting protrusion 14 of the inner disk 1 is placed in the first limiting groove 24 of the connecting disk 2.

[0058] like Fig.11 As shown, when this embodiment is in use, the source gas enters the reaction chamber through the first jet hole 13, the second jet hole 23 and the third jet hole 33, performs a gas phase chemical reaction in the space, performs a surface chemical reaction on the surface of the substrate, and at the same time, a heat source is connected to the surface of the substrate to provide temperature conditions for the entire reaction chamber, and the reaction products and the reaction source gas flow away from the outlet.

[0059] Fig.12 , Fig.13 It reflects the temperature field distribution simulation diagram and AlN film thickness distribution simulation diagram under the existing air intake top plate structure before the present invention. It can be seen that the chemical reaction conditions in the entire reaction chamber include reactant concentration conditions and temperature conditions, and the temperature is determined by the heat source conditions connected to the substrate surface and the radiation heat transfer emissivity and thermal conductivity of the space wall. Among them, the top of the reaction chamber, that is, the lower plate of the reaction chamber air intake top plate, has the greatest influence. The uneven temperature field below the lower plate of the air intake top plate will cause the pre-reaction of the reaction source gas to be violent and uneven. At the same time, the pre-reaction will also cause the reaction products to adhere to the bottom surface of the lower plate, further affecting the uniformity of the flow field and temperature field, and ultimately leading to uneven AlN film growth thickness.

[0060] Therefore, by designing the air inlet top plate of the reaction chamber into a detachable multi-piece structure, and by spraying coatings of different materials, thermal conductivities, emissivities and thicknesses on the inner plate, connecting plate and outer plate of the air inlet top plate of the reaction chamber, different plates can have different emissivities and thermal conductivities, which can effectively adjust the temperature conditions in the reaction chamber, improve the uniformity of the temperature field, and thus improve the uniformity of the AlN film growth thickness.

[0061] Since different materials have different thermal conductivity coefficients, different coating thicknesses of the same material also have different thermal conductivity. The thicker the coating thickness of the same material, the lower the thermal conductivity. Therefore, in a specific embodiment, the bottom surface of the inner disk 1 and the bottom surface of the connecting disk 2 are coated with nickel coatings of different thicknesses, and the bottom surface of the outer disk 3 is coated with a tantalum carbide coating, so that their thermal conductivity and absorptivity are different. Specifically, the thickness of the nickel coating coated on the bottom surface of the inner disk 1 is less than the thickness of the nickel coating coated on the bottom surface of the connecting disk 2, and the thickness of the tantalum carbide coating coated on the bottom surface of the outer disk 3 is greater than the thickness of the nickel coating coated on the bottom surface of the connecting disk 2. More specifically, the bottom surface of the inner disk 1 is coated with a nickel coating of 50 microns thick, the bottom surface of the connecting disk 2 is coated with a nickel coating of 80 microns thick, and the bottom surface of the outer disk 3 is coated with a tantalum carbide coating of 100 microns thick.

[0062] That is to say, in the embodiment of the present invention, the thickness and thermal conductivity of the coating change gradually from the inside to the outside. From the inside to the outside of the air intake top plate, the thermal conductivity gradually decreases and the emissivity gradually increases, thereby improving the uneven temperature field phenomenon of high temperature inside and low temperature outside.

[0063] When implementing this embodiment, the coating sprayed on the bottom plate of the air intake top plate can also be polished. The smooth surface can reduce the turbulence of the airflow when it flows on the bottom surface of the air intake top plate, so that the airflow passes over the bottom surface more smoothly. The smooth coating surface can make the airflow evenly carry away the heat, avoid the uneven heat exchange caused by local turbulence, and thus improve the uniformity of the temperature field.

[0064] In this embodiment, the nickel coating can greatly reduce the adhesion of reaction products and improve the uniformity of the temperature field; the thermal conductivity of the tantalum carbide coating is lower than that of the nickel coating, while the emissivity is larger, which forms a boundary insulation layer for the entire temperature field at the outer disk 3 of the air intake top disk, while improving the thermal radiation efficiency of the entire temperature field, improving the uniformity of the temperature field, and thereby improving the uniformity of the AlN film thickness.

[0065] Fig.14 and Fig.15 The temperature field and AlN film thickness distribution provided by the embodiment of the present invention are simulated. Fig.14 It can be seen that the uniformity of the temperature field has been greatly improved, and the uneven phenomenon of high temperature inside and low temperature outside has been completely solved; Fig.15 It can be seen that the non-uniformity of the AlN film thickness is improved from the original Cv≤9.83% to Cv≤0.36%. Therefore, the uniformity of the temperature field and the AlN film thickness of the embodiment of the present invention are greatly improved.

[0066] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the technical principles of the present invention, and these improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. An air intake top plate capable of regulating the temperature of a reaction chamber, characterized in that: The invention comprises an inner disk (1), at least one connecting disk (2) and an outer disk (3), wherein the inner disk (1) is sleeved inside a first connecting disk (2) and is detachably connected to the first connecting disk (2), adjacent connecting disks (2) are sleeved in sequence and are detachably connected, and the outer disk (3) is sleeved around the outermost connecting disk (2) and is detachably connected to the outermost connecting disk (2), and the inner disk (1), at least one connecting disk (2) and the outer disk (3) are all provided with a plurality of jet holes. The inner disk (1), at least one connecting disk (2) and the outer disk (3) have different emissivities and / or thermal conductivities.

2. The air intake top plate capable of adjusting the temperature of the reaction chamber according to claim 1, characterized in that: The inner disk (1) is in the shape of a boss cylinder, comprising an upper boss cylinder (11) and a lower boss cylinder (12). The upper boss cylinder (11) and the lower boss cylinder (12) are coaxially arranged, the top surface of the lower boss cylinder (12) is fixedly connected to the bottom surface of the upper boss cylinder (11), the diameter of the upper boss cylinder (11) is larger than the diameter of the lower boss cylinder (12), and a plurality of first jet holes (13) are provided on the boss cylinder.

3. The air inlet top plate capable of adjusting the temperature of the reaction chamber according to claim 1 or 2, characterized in that: The connecting disk (2) is in the shape of an offset cylindrical ring, comprising a first upper cylindrical ring (21) and a first lower cylindrical ring (22). The first upper cylindrical ring (21) and the first lower cylindrical ring (22) are coaxially arranged, the top surface of the first lower cylindrical ring (22) is fixedly connected to the bottom surface of the first upper cylindrical ring (21), the outer diameter of the first lower cylindrical ring (22) is located between the inner diameter and the outer diameter of the first upper cylindrical ring (21), the inner diameter of the first upper cylindrical ring (21) is larger than the inner diameter of the first lower cylindrical ring (22), a plurality of penetrating second jet holes (23) are opened on the offset cylindrical ring, and the inner disk (1) is sleeved between the inner diameters of the first upper cylindrical ring (21) and the first lower cylindrical ring (22).

4. The air intake top plate capable of adjusting the temperature of the reaction chamber according to claim 3, characterized in that: The outer disk (3) is in the shape of a first boss cylindrical ring, comprising a second upper cylindrical ring (31) and a second lower cylindrical ring (32); the second upper cylindrical ring (31) and the second lower cylindrical ring (32) are coaxially arranged; the top surface of the second lower cylindrical ring (32) is fixedly connected to the bottom surface of the second upper cylindrical ring (31); the inner diameter of the second upper cylindrical ring (31) is greater than the inner diameter of the second lower cylindrical ring (32); the outer diameter of the second upper cylindrical ring (31) is equal to the outer diameter of the second lower cylindrical ring (32); a plurality of third jet holes (33) are provided on the first boss cylindrical ring; and the connecting disk (2) is sleeved between the inner diameters of the second upper cylindrical ring (31) and the second lower cylindrical ring (32).

5. The air inlet top plate capable of adjusting the temperature of the reaction chamber according to claim 4, characterized in that: A first limiting protrusion (14) is fixedly connected to the edge of the upper cylinder (11) on the boss, a first limiting groove (24) adapted to the first limiting protrusion (14) is provided on the inner edge of the first upper cylindrical ring (21), a second limiting protrusion (25) is fixedly connected to the outer edge of the first upper cylindrical ring (21), a second limiting groove (34) adapted to the second limiting protrusion (25) is provided on the inner edge of the second upper cylindrical ring (31), and a third limiting protrusion (35) is fixedly connected to the outer edge of the second lower cylindrical ring (32).

6. The air inlet top plate capable of adjusting the temperature of the reaction chamber according to claim 4 or 5, characterized in that: The outer disk (3) is sleeved in the reaction chamber disk body (4) and is detachably connected to the reaction chamber disk body (4); the reaction chamber disk body (4) is in the shape of a second boss cylindrical ring, comprising a third upper cylindrical ring (41) and a third lower cylindrical ring (42); the third upper cylindrical ring (41) and the third lower cylindrical ring (42) are coaxially arranged; the top surface of the third lower cylindrical ring (42) is fixedly connected to the bottom surface of the third upper cylindrical ring (41); the inner diameter of the third upper cylindrical ring (41) is greater than the inner diameter of the third lower cylindrical ring (42); the outer diameter of the third upper cylindrical ring (41) is equal to the outer diameter of the third lower cylindrical ring (42); and the outer disk (3) is sleeved between the inner diameters of the third upper cylindrical ring (41).

7. The air intake top plate capable of adjusting the temperature of the reaction chamber according to claim 6, characterized in that: The outer edge of the third upper cylindrical ring (41) is provided with a third limiting groove (43) adapted to the third limiting protrusion (35).

8. The air intake top plate capable of adjusting the temperature of the reaction chamber according to claim 1, characterized in that: The bottom surface of the inner disk (1) and the bottom surface of the connecting disk (2) are coated with nickel coatings of different thicknesses, and the bottom surface of the outer disk (3) is coated with tantalum carbide coating.

9. The air inlet top plate capable of regulating the temperature of the reaction chamber according to claim 8, characterized in that: The thickness of the nickel coating coated on the bottom surface of the inner disk (1) is smaller than the thickness of the nickel coating coated on the bottom surface of the connecting disk (2), and the thickness of the tantalum carbide coating coated on the bottom surface of the outer disk (3) is larger than the thickness of the nickel coating coated on the bottom surface of the connecting disk (2).

10. The air inlet top plate capable of adjusting the temperature of the reaction chamber according to claim 8 or 9, characterized in that: The bottom surface of the inner disk (1) is coated with a nickel coating of 50 microns thick, the bottom surface of the connecting disk (2) is coated with a nickel coating of 80 microns thick, and the bottom surface of the outer disk (3) is coated with a tantalum carbide coating of 100 microns thick.

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