Air supply device and semiconductor film equipment using same

Abstract

The invention discloses a gas supply device and semiconductor film equipment applying the same, the gas supply device is used for conveying gas into a cavity, the gas supply device comprises a gas conveying unit and a gas supply pipeline, one end of the gas conveying unit is externally connected with a gas source, and the other end of the gas conveying unit is connected with one end of the gas supply pipeline; the other end of the air supply pipeline extends into the cavity; the other end of the air supply pipeline is a blind end, and an air outlet unit is formed in a pipeline, extending into the cavity, of the air supply pipeline. When the air supply device is applied to the semiconductor film equipment, the other end of the air supply pipeline faces the bottom of the heating disc, and due to the fact that the other end of the air supply pipeline is a blind end, air enters the cavity through the air outlet hole units on the side face, under the condition, normal-temperature air does not make direct contact with the bottom of the heating disc; therefore, thermal shock caused by the fact that inert gas is directly blown to the bottom of the heating plate is avoided, and the technical problem that thermal shock affects the service life of the heating plate and even causes failure of the heating plate is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a gas supply device and a semiconductor thin film device using the same. Background Art

[0002] In semiconductor thin film equipment, a heating device that provides the necessary temperature for the reaction chamber is very important. Currently, the heating device is usually in the form of a heating disk. However, when the process temperature is high, the heating wire of the heating disk is easily oxidized, causing damage to the heating disk or reducing its service life. Therefore, it is necessary to use an inert gas delivery system in the chamber where the heating wire of the heating disk is located to provide an anaerobic atmosphere for it to work.

[0003] The existing air supply system introduces the inert gas through the air intake block, and then sends it to the inside of the chamber where the heating wire of the heating plate is located through the air supply pipe. The end of the air supply pipe is an open pipe mouth, and there are two sets of lateral holes on the side. The inert gas fills the chamber through the above-mentioned pipe mouth and lateral holes. In the specific use process, the open pipe mouth at the top causes the gas to blow directly to the bottom of the heating plate, or adversely affects the uniformity of the plate surface of the heating plate. In addition, the existing air supply system that provides inert gas protection for the heating plate does not have a heating device, that is, the inert gas at room temperature is directly delivered to the relevant parts of the heating plate. The normal temperature airflow will produce a temperature difference shock to the heating plate in the working state, which will have a negative impact on its service life and increase the risk of strength failure of the heating plate. Summary of the invention

[0004] The embodiments of the present invention provide an air supply device and a semiconductor thin film device using the same, which solves the technical problem that a traditional air supply device directly blows room temperature gas to a heating plate, causing thermal shock to the heating plate and affecting the service life of the heating plate, or even causing the heating plate to fail.

[0005] In order to solve the above-mentioned problem, according to one aspect of the present application, an embodiment of the present invention provides an air delivery device for delivering gas into a chamber, wherein the air delivery device comprises a gas delivery unit and an air delivery pipeline, wherein one end of the gas delivery unit is connected to an external gas source, and the other end of the gas delivery unit is connected to one end of the air delivery pipeline, and the other end of the air delivery pipeline extends into the chamber; wherein the other end of the air delivery pipeline is a blind end, and an air outlet unit is provided on the pipe extending from the air delivery pipeline into the chamber.

[0006] In some embodiments, the air outlet hole unit includes a radial hole module, and the radial hole module includes at least two radial holes distributed along the axial direction; wherein the radial holes are opened toward the center of the chamber.

[0007] In some embodiments, the air outlet unit further includes a lateral air outlet module, and the lateral air outlet module includes at least two side holes distributed along the axial direction; wherein the side holes are opened toward both sides of the interior of the chamber.

[0008] In some embodiments, the lateral air outlet modules have at least two groups, and the at least two groups of lateral air outlet modules are distributed along the circumferential direction.

[0009] In some embodiments, the diameter of the radial hole is larger than the diameter of the side hole; and / or the diameter of the radial hole is larger than 1.5 times the diameter of the side hole.

[0010] In some embodiments, the radial holes and the side holes are staggered in the axial direction.

[0011] In some embodiments, the gas delivery unit includes a delivery pipeline and a heating module, and the delivery pipeline is located in the heating module.

[0012] In some embodiments, the delivery pipeline is spiral-shaped, and its inlet and outlet ends both extend out of the heating module, and its outlet end is connected to the gas delivery pipeline via a gas adapter.

[0013] In some embodiments, the heating module includes a heating layer and a thermal insulation layer, and the heating layer is located inside the thermal insulation layer; the transport pipeline is nested in the thermal insulation layer or nested between the heating layer and the thermal insulation layer.

[0014] According to another aspect of the present application, an embodiment of the present invention provides a semiconductor thin film device, which includes a heating plate and the above-mentioned gas supply device, the heating wire of the heating plate is located in the chamber, and the other end of the gas supply pipeline extends into the chamber and is close to the bottom of the chamber.

[0015] Compared with the prior art, the air supply device of the present invention has at least the following beneficial effects:

[0016] The air delivery device provided by the present invention is used to deliver gas into a chamber, and the air delivery device includes a gas delivery unit and an air delivery pipeline. One end of the gas delivery unit is connected to an external gas source, and the other end of the gas delivery unit is connected to one end of the air delivery pipeline, and the other end of the air delivery pipeline extends into the chamber; wherein the other end of the air delivery pipeline is a blind end, and an air outlet unit is provided on the pipe extending from the air delivery pipeline into the chamber.

[0017] In traditional semiconductor thin film equipment, room temperature gas is blown out from the other end of the gas supply pipeline and directly acts on the bottom of the heating plate. The room temperature gas directly contacts the heating plate, causing the surface temperature of the heating plate to drop rapidly. In this case, the temperature variation of the heating plate is large, which may cause the thermal stress of the heating plate to increase, thereby generating a large impact force and affecting the stability of the heating plate. When the gas supply device provided in this embodiment is used in a semiconductor thin film device, the other end of the gas supply pipeline faces the bottom of the heating plate, and because the other end of the gas supply pipeline is a blind end, the gas enters the chamber through the side air outlet unit. In this case, the room temperature gas does not directly contact the bottom of the heating plate, thereby avoiding the thermal shock caused by the inert gas blowing directly to the bottom of the heating plate.

[0018] The semiconductor thin film device provided by the present invention is designed based on the above-mentioned air supply device. Its beneficial effects refer to the beneficial effects of the above-mentioned air supply device, which will not be described in detail here.

[0019] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0021] Figure 1 A cross-sectional view of a gas delivery unit in a gas delivery device provided by an embodiment of the present invention is shown;

[0022] Figure 2 A schematic diagram of the structure of a delivery pipeline in a gas delivery device provided in an embodiment of the present invention is shown;

[0023] Figure 3 A schematic structural diagram of an air supply pipeline in an air supply device provided in an embodiment of the present invention is shown;

[0024] Figure 4 A front view of an air supply pipeline in an air supply device provided in an embodiment of the present invention is shown;

[0025] Figure 5 The flow field distribution inside the heater handle after using the comparative example is shown;

[0026] Figure 6 The flow field distribution diagram inside the heater handle after the air supply device provided in this embodiment is adopted is shown;

[0027] Figure 7 The temperature cloud diagram of a gas supply device provided in this embodiment when the length of the delivery pipeline is L1 is shown;

[0028] Figure 8 The temperature cloud diagram of a gas supply device provided in this embodiment when the length of the delivery pipeline is L2 is shown;

[0029] Fig. 9 The temperature cloud diagram of a gas supply device provided in this embodiment when the length of the delivery pipeline is L3 is shown;

[0030] Reference numerals:

[0031] 1. Gas delivery unit; 11. Delivery pipeline; 12. Heating module; 121. Heating layer; 122. Insulation layer; 2. Gas delivery pipeline; 3. Air outlet unit; 31. Radial hole module; 32. Lateral air outlet module; 311. Radial hole; 321. Side hole. DETAILED DESCRIPTION

[0032] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation methods, structures, features and effects of the present invention application are described in detail below in conjunction with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures, or characteristics in one or more embodiments may be combined in any suitable form.

[0033] In the description of the present invention, it should be clarified that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, but are not necessarily used to describe a specific order or sequence; the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "up", "down", "horizontal", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, and do not mean that the referred device or element must have a specific direction or position, and therefore cannot be understood as a limitation on the present invention.

[0034] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In the semiconductor manufacturing process, processes such as chemical vapor deposition need to be carried out under high temperature conditions to promote the chemical reaction between the reaction gas and the surface of the silicon wafer to generate the required thin film material. For example, in the CVD process, the gas is more easily decomposed and deposited on the surface of the silicon wafer at high temperature to form a uniform film. In order to provide high temperature conditions, a heating plate with a built-in heating wire is generally used.

[0036] Under high temperature environment, oxygen in the air reacts chemically with the surface of the heating wire to form an oxide layer. This oxidation reaction will be significantly accelerated at high temperature because high temperature increases the diffusion rate and reaction rate of gas molecules. When the heating wire is oxidized, it will cause damage to the heating plate or reduce its service life. In order to avoid this problem, an inert gas is introduced into the cavity where the heating wire is located through the air supply system to provide an anaerobic atmosphere. The initial state of the transported gas is room temperature, and the location to which it is transported is the cavity of the handle of the heating plate close to the plate surface. The temperature at this location is relatively high, which produces a thermal shock to the heating plate, which is not good for the service life of the heating plate, and may even increase the risk of strength failure of the heating plate.

[0037] In response to the above problems, the present invention proposes the following solutions: the first is to prevent the gas from blowing directly to the heating plate to reduce the impact; the second is to heat the gas leading to the cavity to reduce the temperature difference; the combination of these two ideas solves the technical problem that the traditional air supply device directly blows the normal temperature gas to the heating plate, causing thermal shock to the heating plate, affecting the service life of the heating plate, and even causing the heating plate to fail.

[0038] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0039] Example 1

[0040] This embodiment provides an air supply device, such as Figure 1-Figure 4 As shown, it is used to deliver gas into the chamber, and the gas delivery device includes a gas delivery unit 1 and a gas delivery pipeline 2, one end of the gas delivery unit 1 is connected to an external gas source, and the other end of the gas delivery unit 1 is connected to one end of the gas delivery pipeline 2, and the other end of the gas delivery pipeline 2 extends into the chamber; wherein, the other end of the gas delivery pipeline 2 is a blind end, and an air outlet unit 3 is provided on the pipeline of the gas delivery pipeline 2 extending into the chamber.

[0041] The interior of the gas delivery unit 1 is a hollow structure, and its input end is connected to an external inert gas source, for example, nitrogen, and its output end is connected to one end of the gas supply line 2 through a gas adapter. The gas supply line 2 is a hollow columnar structure, and its other end extends into the chamber. In this embodiment, it is emphasized that the other end of the gas supply line 2 is a blind end, that is, its end is closed, and an air outlet unit 3 is provided on the pipe extending from the gas supply line 2 into the chamber, that is, the air outlet unit 3 is provided on the side wall of the pipe extending from the gas supply line 2 into the chamber, so that the inert gas delivered by the gas delivery unit 1 can be discharged from the side wall of the gas supply line 2 into the chamber through the air outlet unit 3.

[0042] In traditional semiconductor thin film equipment, room temperature gas is blown out from the other end of the gas supply line and directly acts on the bottom of the heating plate. The room temperature gas directly contacts the heating plate, causing the surface temperature of the heating plate to drop rapidly. In this case, the temperature variation of the heating plate is large, which may cause the thermal stress of the heating plate to increase, thereby generating a large impact force and affecting the stability of the heating plate. When the gas supply device provided in this embodiment is used in a semiconductor thin film device, the other end of the gas supply line 2 faces the bottom of the heating plate, and since the other end of the gas supply line 2 is a blind end, the gas enters the chamber through the side air outlet unit 3. In this case, the room temperature gas does not directly contact the bottom of the heating plate, thereby avoiding the thermal shock caused by the inert gas blowing directly to the bottom of the heating plate.

[0043] In a specific embodiment, the air outlet hole unit 3 includes a radial hole module 31, and the radial hole module 31 includes at least two radial holes 311 distributed along the axial direction; wherein the radial holes 311 are opened toward the center of the chamber.

[0044] The cross-section of the chamber is generally circular. Due to the structure of the semiconductor thin film device itself, when the other end of the gas supply pipeline 2 extends into the chamber, it cannot be located in the center of the chamber. Therefore, the gas supply pipeline 2 is set on one side of the chamber.

[0045] For better description below, it is assumed that the gas supply pipeline 2 is close to the left side of the chamber, and the radial hole 311 faces the right side of the chamber. The radial hole module 31 includes at least two radial holes 311 distributed along the axial direction, and the number of radial holes 311 is related to the size of the chamber. In this embodiment, the radial holes 311 can be used to distribute the inert gas flow to different areas in the chamber to improve the uniformity of the gas flow distribution and reduce the gas enrichment phenomenon in the local area.

[0046] In a specific embodiment, the air outlet unit 3 further includes a lateral air outlet module 32, and the lateral air outlet module 32 includes at least two side holes 321 distributed along the axial direction; wherein the side holes 321 are opened toward both sides of the chamber. The radial hole 311 is opened toward the center of the chamber, and the side holes 321 are opened toward other directions except the center.

[0047] In a specific embodiment, the lateral air outlet module 32 has at least two groups, and the at least two groups of the lateral air outlet modules 32 are distributed along the circumferential direction. Assuming that the lateral air outlet module 32 has two groups, namely the first lateral air outlet module and the second lateral air outlet module. Assuming that in a certain embodiment, the air supply pipeline 2 is arranged close to the left side of the chamber, on the circumference of the air supply pipeline 2, the gas outlets of the first lateral air outlet module, the second lateral air outlet module and the radial hole module 31 are all close to the right side of the chamber.

[0048] In a specific embodiment, the aperture of the radial hole 311 is larger than the aperture of the side hole 321. The radial hole 311 has a larger aperture, which can provide a larger gas flow rate, thereby ensuring that the gas can be more effectively discharged from the side wall of the gas supply pipeline 2 and enter the central area of ​​the chamber. It helps to evenly distribute the gas to the center of the chamber and reduce the local enrichment of the gas in the chamber. By increasing the aperture of the radial hole, this embodiment can improve the flow rate and distribution efficiency of the gas, thereby optimizing the airflow distribution in the chamber, reducing local temperature changes, and ensuring the reliability of the heating plate. According to experimental simulation, the aperture of the radial hole 311 is larger than 1.5 times the aperture of the side hole 321.

[0049] In a specific embodiment, the radial holes 311 and the side holes 321 are staggered in the axial direction. The radial holes 311 and the side holes 321 are staggered in the axial direction to ensure that the gas flows more evenly in the chamber. The radial holes 311 are mainly distributed in the central area of ​​the chamber, while the side holes 321 are distributed in the two side areas of the chamber. The limitation of this embodiment can avoid the concentrated flow of gas in the chamber and reduce the gas enrichment phenomenon in local areas.

[0050] In one embodiment, the diameter of the radial hole 311 is larger than the diameter of the side hole 321, and the radial hole 311 and the side hole 321 are staggered in the axial direction. This arrangement can better optimize the flow field of the gas in the chamber, and the cross section is an annular cavity, thereby reducing the temperature difference impact of the airflow on the heating plate. At the same time, it can balance the flow resistance in the circumferential direction, optimize the uniformity of the flow field, and even out the thermal impact of the airflow on the heating plate.

[0051] In order to prove the effect of the other end of the air supply pipeline 2 being a blind end and the radial hole 311 and the side hole 321 being matched, the following simulation is performed:

[0052] The solution provided by this embodiment is specifically: the other end of the air supply pipeline 2 is a blind end, and two groups of lateral air outlet modules 32 and one group of radial hole modules 31 are opened on the pipeline of the air supply pipeline 2 extending into the chamber; comparative example: the other end of the air supply pipeline 2 is not a blind end, and side holes are opened on the pipeline of the air supply pipeline 2 extending into the chamber. After simulating the solution of this embodiment and the solution of the comparative example, the flow field distribution diagram inside the heater handle of the heating plate is obtained, as shown in FIG. Figure 5 and Figure 6 As shown in the figure, it can be seen that: by adopting the solution of this embodiment, the obvious high point of the flow field at the heater handle is greatly weakened, and the range is also reduced by about 2 / 3, which has the effect of optimizing the uniformity of the flow field.

[0053] In a specific embodiment, the gas delivery unit 1 includes a delivery pipeline 11 and a heating module 12, and the delivery pipeline 11 is located in the heating module 12. The delivery pipeline 11 is heated by the heating module 12, so that the temperature of the inert gas in the delivery pipeline 11 is increased, the temperature difference between the inert gas and the chamber is reduced, and the thermal shock is reduced.

[0054] In a specific embodiment, the delivery pipeline 11 is spiral, and its inlet and outlet both extend out of the heating module 12, and its outlet is connected to the gas delivery pipeline 2 through a gas adapter. In this embodiment, the delivery pipeline 11 is a spiral design, which helps the gas to gradually heat up during the delivery process and reduce the temperature difference; at the same time, the spiral structure can also increase the contact area between the gas and the heating module 12, thereby improving the heating efficiency.

[0055] In addition, through simulation experiments, it is known that the longer the length of the delivery pipeline 11 after extension, the smaller the spacing between adjacent spirals, and the higher the temperature at its outlet. The specific simulation experiments are as follows: Experiment 1, using a delivery pipeline 11 with a length of L1, the temperature cloud diagram after simulation is as follows Figure 7 As shown; Experiment 2, using the delivery pipeline 11 with a length of L2, the temperature cloud diagram after simulation is as follows Figure 8 As shown; Experiment 3, using the delivery pipeline 11 with a length of L3, the temperature cloud diagram after simulation is as follows Fig. 9 As shown; wherein, L3>L2>L1, but the length of the delivery pipeline 11 in the spiral state in Experiment 1, Experiment 2 and Experiment 3 is the same. Figure 7 , Figure 8 as well as Fig. 9 It can be seen that the length of the delivery pipeline 11 after expansion is positively correlated with the temperature at the outlet.

[0056] In addition, the gas adapter can be a LOK joint, which is suitable for the transmission of gases such as inert gas, nitrogen and compressed air. It includes a nut: used to fix and seal the joint; a joint body: with a groove sealing ring; a bushing: used to achieve sealing; a steel pipe: the joint is installed on the steel pipe by flanging or brazing. Its working principle is: based on the high-strength sealing ring embedded in the groove on the end face of the joint body, when the nut is tightened, the steel pipe flanging or the bushing brazed on the steel pipe is squeezed, thereby forming an O-ring seal on the end face of the steel pipe. This design ensures that the sealing ring will not be displaced due to the installation force, thereby achieving a leak-free connection between the gas supply pipeline 2 and the transmission pipeline 11.

[0057] In a specific embodiment, the heating module 12 includes a heating layer 121 and a thermal insulation layer 122, wherein the heating layer 121 is located inside the thermal insulation layer 122; the delivery pipeline 11 is nested in the thermal insulation layer 122 or between the heating layer 121 and the thermal insulation layer 122. The heating layer 121 may be a conventional heating device, such as a heating belt of a pumping system, and the thermal insulation layer 122 is sheathed on its periphery.

[0058] The delivery pipeline 11 is nested in the insulation layer 122 or between the heating layer 121 and the insulation layer 122. The heating layer 121 can heat the inert gas in the delivery pipeline 11. At the same time, the heat radiated outward by the heating layer 121 will be absorbed by the delivery pipeline 11 or the insulation layer 122, and further used to increase the temperature of the inert gas in the delivery pipeline 11 and preheat the inert gas. The preheated inert gas enters the chamber of the handle of the heating plate, reducing the temperature difference and thus reducing the thermal shock of the gas on the heating plate.

[0059] In addition, during the specific use, the length of the air supply pipeline 2 is appropriately lengthened. In the traditional air supply system, in order to avoid excessive thermal shock, the air supply pipeline cannot be too deep into the bottom of the chamber, so as to avoid a large flow field dead zone at the bottom of the chamber. After the air supply device provided in this embodiment is adopted, since the end of the air supply pipeline 2 is a blind end and the gas entering the chamber is preheated, excessive thermal shock is avoided. Therefore, in this embodiment, the length of the air supply pipeline 2 should be appropriately lengthened to reduce the flow field dead zone.

[0060] Example 2

[0061] This embodiment provides a semiconductor thin film device, which includes a heating plate and the air supply device described in Example 1, the heating wire of the heating plate is located in the chamber, and the other end of the air supply pipeline 2 extends into the chamber and is close to the bottom of the chamber.

[0062] After adopting the air supply device in Example 1, the performance of the heating plate of the semiconductor thin film device provided in this embodiment is guaranteed.

[0063] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A gas delivery device for delivering gas into a chamber, characterized in that: The gas delivery device includes a gas delivery unit and a gas delivery pipeline, one end of the gas delivery unit is connected to an external gas source, the other end of the gas delivery unit is connected to one end of the gas delivery pipeline, and the other end of the gas delivery pipeline extends into the chamber; wherein the other end of the gas delivery pipeline is a blind end, and an air outlet unit is provided on the pipe extending from the gas delivery pipeline into the chamber.

2. The air supply device according to claim 1, characterized in that: The air outlet hole unit includes a radial hole module, and the radial hole module includes at least two radial holes distributed along the axial direction; wherein the radial holes are opened toward the center of the chamber.

3. The air supply device according to claim 2, characterized in that: The air outlet unit further includes a lateral air outlet module, and the lateral air outlet module includes at least two side holes distributed along the axial direction; wherein the side holes are opened toward two sides of the interior of the chamber.

4. The air supply device according to claim 3, characterized in that: The side air outlet modules include at least two groups, and the at least two groups of side air outlet modules are distributed along the circumferential direction.

5. The air supply device according to claim 3, characterized in that: The diameter of the radial hole is larger than the diameter of the side hole; and / or the diameter of the radial hole is larger than 1.5 times the diameter of the side hole.

6. The air supply device according to claim 3, characterized in that: The radial holes and the side holes are staggeredly distributed in the axial direction.

7. The air supply device according to any one of claims 1 to 6, characterized in that: The gas delivery unit comprises a delivery pipeline and a heating module, wherein the delivery pipeline is located inside the heating module.

8. The air supply device according to claim 7, characterized in that: The delivery pipeline is spiral-shaped, and its inlet end and outlet end both extend out of the heating module, and its outlet end is connected to the gas delivery pipeline through a gas adapter.

9. The air supply device according to claim 7, characterized in that: The heating module comprises a heating layer and a thermal insulation layer, wherein the heating layer is located inside the thermal insulation layer; the conveying pipeline is nested inside the thermal insulation layer or between the heating layer and the thermal insulation layer.

10. A semiconductor thin film device, characterized in that: The semiconductor thin film equipment comprises a heating plate and the gas supply device according to any one of claims 1 to 9, the heating wire of the heating plate is located in the chamber, and the other end of the gas supply pipeline extends into the chamber and is close to the bottom of the chamber.

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